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WO2002027077A1 - Procede de fabrication d'un monocristal en silicium et dispositif de fabrication d'un monocristal semiconducteur - Google Patents

Procede de fabrication d'un monocristal en silicium et dispositif de fabrication d'un monocristal semiconducteur Download PDF

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Publication number
WO2002027077A1
WO2002027077A1 PCT/JP2001/008408 JP0108408W WO0227077A1 WO 2002027077 A1 WO2002027077 A1 WO 2002027077A1 JP 0108408 W JP0108408 W JP 0108408W WO 0227077 A1 WO0227077 A1 WO 0227077A1
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WIPO (PCT)
Prior art keywords
single crystal
furnace
growth furnace
growth
silicon
Prior art date
Application number
PCT/JP2001/008408
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English (en)
Japanese (ja)
Inventor
Makoto Iida
Hiromi Watanabe
Original Assignee
Shin-Etsu Handotai Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co.,Ltd. filed Critical Shin-Etsu Handotai Co.,Ltd.
Publication of WO2002027077A1 publication Critical patent/WO2002027077A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Definitions

  • the present invention relates to a method for manufacturing a silicon single crystal and an apparatus for manufacturing a semiconductor single crystal including the silicon single crystal.
  • CZ method Method, hereinafter referred to as CZ method.
  • a raw material mass is accommodated in a crucible disposed in a growth furnace of a single crystal manufacturing apparatus, and a raw material in the crucible is melted by heating a heater disposed around the crucible to a high temperature.
  • the seed crystal is immersed on the surface of the raw material melt. Thereafter, the seed crystal is gently pulled up to form a semiconductor single crystal having a desired diameter and quality below the seed crystal. Cultivate.
  • Recent semiconductor single crystal manufacturing equipment using the CZ method has been developed with the advancement of automation and the development of optical equipment, and an imaging device for observing the inside of the growth furnace outside the growth furnace and a crystal pulled from the melt.
  • Devices equipped with an optical detection device such as an optical diameter detection device for detecting the diameter of a laser or a radiation thermometer for measuring the temperature of a melt have been used.
  • an imaging device the main body of the device is mounted outside the growth furnace, and through the furnace observation window provided on the growth furnace wall and the upper furnace internal structure disposed inside the growth furnace. The raw material melt surface and the single crystal growing part inside the growing furnace are photographed. The image data obtained by the photographing is used as growth control information for the semiconductor single crystal.
  • Such an observation window inside the furnace may separate the inside and outside of the growth furnace and impair the function of the upper furnace internal structure.
  • transparent glass is inserted so that the inside of the growth furnace can be observed and measured without the need to check the growth status of the single crystal through this glass, and to collect information inside the growth furnace. Processing and performing various controls necessary for single crystal growth.
  • Various methods have been sought for improvement.
  • the upper furnace internal structure As a method for efficiently cooling the single crystal pulled from the raw material melt, the upper furnace internal structure is placed just above the raw material melt surface so as to surround the single crystal, and the heater and the raw material melt surface A common method is to rapidly cool the crystal by shielding radiant heat.
  • the upper furnace internal structure to be used includes a cylindrical gas rectifying cylinder disposed so as to hang down from the upper growth furnace, a heat shielding screen having an inverted conical appearance, and an inner structure of the growth furnace.
  • Various shapes are being studied according to the environment and crystal quality.
  • evaporates such as SiO 2 are constantly emitted toward the growth furnace.
  • the evaporate solidifies and precipitates in the low temperature part, adheres to the structure of the furnace wall of the growth furnace and the structure in the furnace, and gradually accumulates. To go. If the amount of such deposits becomes too large, the deposits may come off during the operation, fall into the raw material melt, or adhere to the growing part of the single crystal, causing crystals such as dislocations. This may cause defects and may hinder normal single crystal growth.
  • an inert gas such as Ar (argon) gas having low reactivity is supplied to the inside of the growth furnace. It is circulated at a sufficient flow rate, and evaporates from the raw material melt are discharged out of the growth furnace together with the inert gas.
  • Ar argon
  • large-diameter long single crystals which require time to grow single crystals, and the so-called Multiple Czochralski Method (single crystal growth), without solidifying the crucible material melt after growing the single crystals.
  • the evaporation from the raw material melt is efficiently removed from the growth furnace. It is an important requirement to keep the growth furnace clean for a long time from the start to the end of the operation, and to maintain a stable operation.
  • the upper furnace internal structure The temperature of the gas itself has also dropped significantly, resulting in the accelerated adhesion of evaporants. Also, the attachment of evaporants to the upper furnace internals tends to be further promoted as the size of single crystal manufacturing equipment increases. Specifically, single crystal manufacturing equipment for growing large single crystals uses large-diameter crucibles to hold a large amount of molten material, or it is necessary to hold large-diameter crucibles. As a result, the growth furnace itself also had a large volume, and relatively low-temperature parts were more likely to be formed in places away from the heat source.
  • An object of the present invention is to grow and deposit silicon vapor from a silicon melt on an upper furnace structure located immediately above a silicon melt in growing a silicon single crystal using the CZ method.
  • To provide a method for producing a silicon single crystal that can effectively suppress the occurrence of a single crystal for example, can continue operation for a long time without obstructing in-reactor observation necessary for growing a single crystal and controlling equipment.
  • a method for producing a silicon single crystal comprises: disposing a crucible containing a silicon melt inside a growing furnace; and forming an upper furnace so as to surround the grown single crystal.
  • An internal structure is provided, and a silicon single crystal is grown by the Czochralski method while flowing an inert gas downstream from above in the upper furnace internal structure toward the silicon melt surface in the rutupo.
  • the inert gas flowing out of the opening at the tip of the upper furnace internal structure is transferred to the outside of the growth furnace via a space surrounded by the inner wall of the crucible and the outer wall of the upper furnace internal structure.
  • the flow rate of the inert gas when passing through the space is adjusted to be 6.5 cm / sec or more.
  • the flow rate of the inert gas flowing into the growth furnace from the space between the outer wall of the upper furnace structure and the inner wall of the crucible along the melt surface is adjusted to be 6.5 cm / sec or more.
  • the flow rate of the inert gas is represented by the value at the position where the radial distance between the inner wall of the crucible and the outer wall of the upper furnace internal structure with respect to the single crystal pulling axis in the radial direction is minimum. Shall be.
  • the furnace observation window made of a transparent material (for example, heat-resistant glass such as quartz glass) formed on the growth furnace and the upper furnace internal structure, respectively. It is possible to grow a silicon single crystal while optically detecting or observing the state inside the upper furnace internal structure.
  • the furnace observation window may be fogged by the deposits. It becomes difficult. This makes it possible to continue photographing and observing a single crystal during growth by a photographing means such as a force camera or the like and measurement by an optical system detector such as a crystal diameter detecting device without any problem for a long time.
  • the diameter of the grown crystal is controlled by detecting the illuminated ring (fusion ring) formed at the boundary between the melt surface and the crystal, it is caused when evaporates adhere to the observation window in the furnace. Since the measurement error is reduced over a long period of time, it is possible to control the diameter with high accuracy, and it is possible to improve the productivity and yield of the single crystal. Further, since it is possible to continue pulling a crystal having a desired diameter with a small error, it is possible to grow a single crystal in which the quality is stable over the entire length of the crystal and the dispersion of impurities such as oxygen is suppressed.
  • the effects of the present invention are particularly remarkable in the production of large-diameter crystals, which require time for crystal growth, and in pulling long crystals.
  • the space in the ceiling of the growth furnace main body is relatively large, the diameter exceeds 50 cm, and a large single crystal capable of accommodating a large-diameter rutupo capable of melting 100 kg or more of polycrystalline silicon material.
  • the effect can also be fully exhibited in manufacturing equipment.
  • the same crucible is refilled with the polycrystalline raw material without solidifying the raw material melt, and a single pulling method using a multiple pulling method to grow a plurality of single crystals from one quartz crucible is used. Satisfactory effects can be obtained in crystal production.
  • the above-mentioned effect is sufficiently achieved by controlling the flow rate of the inert gas.
  • the lower limit is set at 6.5 cm / sec, but increasing the flow rate more than necessary wastes inert gas, which is not desirable in view of manufacturing costs. Absent.
  • the space (gap) between the outer wall of the upper furnace internal structure and the inner wall of the crucible Force (flow rate) It is desirable that the flow rate of the inert gas flowing out does not exceed 20 cm / sec at the maximum.
  • the flow rate is more desirably set in the range of 6.5 to 8.5 cmZ sec.
  • the upper furnace internal structure is arranged so as to surround the grown single crystal so as to function as a means for adjusting the thermal history of the grown single crystal, and is placed immediately above the melt surface.
  • the upper furnace internal structure serves to prevent radiant heat from the heater, raw material melt, etc. from directly hitting the crystal.
  • the crystal growth part where the melt surface of the raw material and the grown single crystal are in contact is the shadow of the upper furnace internal structure placed just above these melts, and can be directly observed from outside the growth furnace. Therefore, it is particularly effective to provide the in-furnace observation window, and the effect of the present invention is more remarkably exhibited from the viewpoint of preventing fogging and the like.
  • the upper furnace internal structure can be made of a material having good thermal conductivity such as metal or graphite, and the structure is designed so as to exhibit its effect immediately after the single crystal is pulled. In some cases, the lower end is placed with a slight gap of about 5 to 5 Omm from the surface of the raw material melt.
  • the cooling temperature atmosphere of the single crystal part surrounded by the upper furnace internal structure can be adjusted by devising the thermal conductivity and the heat insulation structure.
  • the inert 1 "raw gas blown up from the melt surface easily hits the surface of the upper furnace internal structure.
  • the outer wall of the upper furnace internal structure can be effectively suppressed. the flow rate of inert I 1 product gas flowing out from between the the Rutsupo inner wall 6. by adjusting such that the 5 cm / sec or more, is possible to effectively suppress the adhesion of vaporized substances evaporated from the raw material melt Possible It is.
  • a gas rectifying cylinder is provided at the lower end facing the surface of the raw material melt so that the surface of the raw material melt is kept warm to suppress temperature fluctuations of the melt near the crystal growth interface and grow the single crystal smoothly.
  • a heat shield ring integrally formed on the side can be used. Although it can be said that such an upper furnace internal structure tends to have a lower temperature and a lower temperature, the use of the method of the present invention can effectively suppress the adhesion of evaporants. In this case, the flow velocity of the inert gas flowing from the space between the outer peripheral surface of the heat shield ring and the inner wall of the crucible into the growth furnace main body is adjusted to be 6.5 cm / sec or more.
  • single crystals are grown by arranging upper furnace structures of complicated and various shapes directly above the raw material melt.
  • the effect can be obtained by adjusting the flow rate of the inert gas flowing between the upper furnace internal structure and the crucible inner wall containing the raw material melt to 6.5 cm / sec or more and flowing it into the growth furnace. Can be obtained.
  • the method of the present invention it is desirable to grow a silicon single crystal while keeping the inside of the growth furnace at a reduced pressure of 200 hPa or less.
  • the operation at a relatively low pressure is performed, so that the evaporation of the evaporation from the raw material melt on the furnace wall of the growth furnace and the surface of the upper internal structure can be further reduced.
  • (1) the amount of inactive I "raw gas flowing into the breeding furnace is small and it is economical.
  • the pressure inside the breeding furnace during operation should be kept at a lower limit of at least 50 hPa.
  • the required flow rate of the inert gas can be easily obtained, and separately from the following reasons: that is, the amount of Si in the evaporating from the melt surface Oxygen is supplied by the elution of oxygen from the wall of the quartz crucible containing the raw material melt, so that if the pressure inside the growth furnace holding the raw material melt becomes lower than necessary, the melting will occur. In some cases, the amount of SiO 2 evaporating from the liquid surface increases, and as a result, the quartz crucible wall containing the raw material melt deteriorates quickly and it becomes difficult to continue the operation for a long time. Lower the pressure of the breeding furnace to avoid Even in this case, it is preferable to grow the single crystal while keeping the pressure at about 50 hPa.
  • the gas rectification cylinder is placed in the growth furnace from the lower end side of the recovery space.
  • An inert gas is provided so as to extend inside the main body, and the inert gas is introduced into the above-mentioned recovery space, and is discharged out of the growth furnace through an exhaust gas pipe connected to the bottom of the growth furnace main body.
  • the inert gas introduced from the upper part of the growth furnace main body passes through, for example, a gas flow straightening tube to melt the raw material.
  • a gas flow straightening tube to melt the raw material.
  • a crucible containing a raw material melt is arranged inside a growth furnace, and an upper furnace internal structure is arranged so as to surround the grown single crystal.
  • an inert gas is flowed down from the upper part of the growth furnace toward the raw material melt surface in the rutupo in the upper furnace internal structure.
  • a plurality of exhaust ports for exhausting inert gas are formed at substantially equal angular intervals on a circumferential path centered on the single crystal pulling shaft on the bottom surface of the growth furnace. It is characterized by the following.
  • the inert gas flowing in the growth furnace can be refluxed and discharged out of the growth furnace without stagnation.
  • the obtained effect can be made more reliable.
  • oxides such as SiO 2 evaporated from the raw material melt can be removed from the growth furnace. Precipitation in the low-temperature portion of the furnace is suppressed, and the inside of the growth furnace can be kept clean for a long time. This makes it difficult for precipitates to accumulate in the upper part of the furnace, causing precipitates to fall into the raw material melt during operation and attaching to the growing single crystal, causing slip dislocation in the crystal. As a result, it is possible to reduce the factors that hinder the crystal growth itself, and to achieve operations.
  • the inert gas into the growth furnace as uniformly as possible about the crystal pulling axis.
  • a plurality of gas outlets are formed at substantially equal angular intervals on a circumferential path centered on the single crystal pulling axis on the bottom portion of the growth furnace main body.
  • two or more exhaust gas slots should be provided at the bottom of the furnace so that each has the same gas exhaust capacity. It is desirable to configure manufacturing equipment.
  • a single crystal growing apparatus having a large volume inside the growing furnace works more effectively, and by adopting such a structure of the single crystal manufacturing apparatus, the structure in the upper furnace and the material melt can be improved.
  • the inert gas flowing out from between the crucible inner walls accommodating the gas can be kept uniform throughout the gap.
  • the inert gas flowing above the melt in the growth furnace body is uniformly recirculated without stagnation, so that it is possible to prevent evaporation substances from adhering to the furnace wall of the growth furnace and the upper furnace internal structure.
  • FIG. 1 is a schematic diagram showing an example of a single crystal manufacturing apparatus of the present invention in a longitudinal section.
  • FIG. 2 is a schematic diagram showing a modified example of the single crystal manufacturing apparatus of FIG. 1, in which a heat shield ring at the lower end of the gas flow straightening tube is replaced with a heat reflecting plate.
  • FIG. 3 is a schematic view showing a modification in which an inverted conical heat shielding screen is provided instead of the gas flow tube.
  • Fig. 4 is a cross-sectional view of Fig. 1 near the bottom of the growth furnace main body.
  • FIG. 5 is a schematic diagram showing the exhaust protrusion together with various modifications thereof.
  • FIG. 6 is a schematic view showing a modified example in which three sets of exhaust gas ports and exhaust gas pipes are formed at equal intervals in a cross section and a partial vertical section.
  • FIG. 7 is a cross-sectional view showing a modification of the exhaust gas port shape.
  • FIG. 8 is a cross-sectional view showing still another modified example.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a semiconductor single crystal manufacturing apparatus according to the CZ method of the present invention.
  • the semiconductor single crystal manufacturing apparatus (hereinafter simply referred to as “single crystal manufacturing apparatus”) 1 accommodates a rutupo 12 filled with a silicon melt 14 as a raw material melt, and a growing furnace for the silicon single crystal 2 3 And a recovery space forming part 4 integrally formed above the growth furnace main body 2 and containing and holding the silicon single crystal 23 pulled up from the silicon melt 14.
  • a crucible 12 having a quartz crucible 12a on the inside and a graphite crucible 12b on the outside is placed at approximately the center of the inside of the growth furnace body 2 via a crucible support shaft 13.
  • the crucible 12 is driven by a crucible drive mechanism 19 attached to the lower end of the crucible support shaft 13. In other words, it is freely rotatable and vertically operable in accordance with the growth conditions and work process of the silicon single crystal 23.
  • a gas rectifying cylinder 5 as an upper furnace internal structure is positioned, with its lower end surface located immediately above and immediately adjacent to the silicon melt 14, and pulled up It is arranged so as to surround the silicon single crystal 23 to be formed.
  • a heat shield ring 30 is attached to the lower end of the gas flow straightening tube 5 so as to face the melt surface 14a.
  • the heat shield ring 30 is made of a heat insulating layer made of a porous or fibrous heat insulating material, and more effectively shields the radiant heat from the silicon melt 14 to enhance the heat retaining effect of the melt. The temperature fluctuation of 14 can be further reduced.
  • the heat insulating layer is made of a material having a high heat insulating effect such as a fibrous heat insulating material made of carbon fiber, a larger heat retaining effect can be obtained, and more stable crystal growth can be performed.
  • the periphery of the heat insulating layer can be covered with a coating layer made of graphite or the like for the purpose of, for example, reducing the influence of carbon contamination derived from the heat insulating layer on the melt.
  • the in-furnace observation windows 44 and 8 made of quartz glass are formed in the growth furnace main body 2 and the gas flow straightening tube 5 as the upper furnace internal structure, respectively. These furnace observation windows 4
  • the silicon single crystal is grown while the state inside the gas rectifying cylinder 5 is not detected or observed by the photographing means such as the camera 6 after passing through steps 4 and 8.
  • FIG. 2 instead of the heat shielding ring 30, a plate-like heat reflecting ring 130 (for example, made of isotropic graphite) having an outer diameter on an inverted truncated cone is provided. You may.
  • FIG. 3 shows an example in which a graphite heat shielding screen 55 having a truncated conical outer shape with a narrowed lower end is provided as an upper furnace internal structure.
  • a flange-shaped heat reflection plate 55a here, substantially parallel to the melt surface
  • the same reference numerals are given to the same elements as those in FIG. 1, and the detailed description will be omitted.
  • the outside of the crucible 12 melts the polycrystalline raw material put in the crucible 12
  • a heater 15 for maintaining the silicon melt 14 at a desired temperature is provided upright on the bottom surface of the growth furnace main body 2 with a heater electrode (not shown) as a support.
  • the heater 15 is heated by supplying electric power from the heater electrode to the heater 15 so that the silicon melt 14 is kept at a high temperature.
  • the recovery space forming section 4 has a gas inlet 9a for introducing an inert gas such as Ar gas into the breeding furnace.
  • the gas inlet 9a is connected to the gas inlet 9a. After the flow rate of the inactive raw gas is adjusted by the gas flow rate control device 122 on the inert gas pipe 9 via the active gas pipe 9, the gas is introduced into the growth furnace.
  • a heat insulating material 16 and a lower heat insulating material 3 are provided inside the growth furnace main body 2 in order to efficiently keep the inside of the growth furnace main body 2 warm and to protect the furnace wall.
  • a gas outlet 11 for exhausting the inert gas introduced into the breeding furnace is provided at the bottom of the breeding furnace main body 2. From the breeding furnace through the exhaust gas pipe 7. The exhaust gas pipe 7 is collected in a collecting pipe 17, and a conductance valve 18 is installed in the middle of the pipe 17, and further ahead is a diagram for assisting the exhaust of inert gas from the growth furnace. A vacuum pump is provided to keep the inside of the growth furnace under reduced pressure.
  • the pressure inside the growth furnace is maintained at a furnace pressure suitable for crystal growth (for example, 50 to 200 hPa) by adjusting the conductance pulp 18 provided in the exhaust gas pipe.
  • a furnace pressure suitable for crystal growth for example, 50 to 200 hPa
  • Each exhaust gas pipe 7 has substantially the same axial cross-sectional area and length, and is commonly sucked by the above-described vacuum pump via the collective pipe 17. As a result, the inert gas is exhausted from each exhaust gas port 11 at the same flow rate.
  • the inert gas in the growth furnace main body 2 in order to efficiently and uniformly discharge the inert gas in the growth furnace main body 2 from the growth furnace, as shown in FIG.
  • two points are provided at the center of the growth furnace, that is, at positions symmetrical with respect to the single crystal pulling axis (that is, the formation angle interval around the single crystal pulling axis is approximately 1). 80 ° C).
  • three or more exhaust gas ports 11 may be formed at substantially equal angular intervals with respect to the single crystal pulling shaft. As a result, more uniform inert gas reflux is possible.
  • an exhaust port 61 may be provided in the exhaust projection 7a so as to open to the upper end surface, but in this embodiment, the exhaust projection 7a is provided.
  • a plurality of the exhaust gas ports 11 are formed at predetermined intervals in the circumferential direction of the outer peripheral surface of the exhaust protrusion 7a.
  • the exhaust projection 7a is formed by projecting the upper end of the exhaust gas pipe 7 through the bottom of the growth furnace main body 2 and projecting a predetermined length H from the bottom.
  • the exhaust protrusion 7a can be formed at the same time by the pipe member forming the exhaust gas pipe 7, thereby reducing the number of parts.
  • FIG. 5 (c) a configuration in which a cylindrical exhaust protrusion 67 is separately formed outside the exhaust gas pipe 7 may be adopted.
  • the upper surface side of the exhaust projection 67 is open to form an exhaust gas port 69, and a shielding plate 68 which forms a front end blocking portion at a predetermined interval is located above the exhaust port 69. It is provided.
  • the shielding plate 68 is connected to the annular upper end surface of the exhaust protrusion 67 via a plurality of columns 69 arranged at predetermined intervals in the circumferential direction.
  • the exhaust gas port 11 is filled with the silicon melt from the exhaust gas port 11 even if all of the silicon melt 14 that can be stored in the crucible 12 flows out into the growth furnace. If it is formed at a position where it does not flow, a more reliable device can be obtained.
  • the height to the lower edge of the exhaust gas port 11 is H
  • the volume of the liquid that can fill the growth furnace up to the height H is V (H) crucible 1. It is better to determine H so that V (H) ⁇ VC, where VC is the internal volume of 2.
  • a wire 22 is wound above the recovery space forming part 4 to pull up the silicon single crystal 23 from the silicon melt 14 or to rotate the crystal during the growth of the single crystal. (Not shown) is provided.
  • a seed holder 120 is attached to the tip of the wire 22 unwound from the wire winding and unwinding mechanism, and the seed crystal 21 is locked to the seed holder 20.
  • a polycrystalline silicon material is filled in a quartz crucible 12 b provided in the single crystal manufacturing apparatus 1, and the material is melted by heating the heater 15 to obtain a silicon melt 14. .
  • the wire 22 is unwound by operating the wire winding and unwinding mechanism, and the seed crystal 21 locked on the seed holder 20 is operated. The tip is gently brought into contact with the surface of the silicon melt 14.
  • the wire 22 is wound up while rotating the rutupo 12 and the seed crystal 21 in directions opposite to each other, and the silicon single crystal 23 can be grown below the seed crystal 21 by pulling up. .
  • the inert gas flowing into the recovery space forming part 4 from the gas inlet 9a flows from inside the recovery space forming part 4 as a subsequent upper furnace internal structure. It flows down into the gas straightening tube 5 and is blown out onto the raw material melt surface 14a. Then, along the raw material melt surface 14 a, it goes around upward through the lower edge of the gas flow straightening tube 5, and is heat shielded. After flowing through the gap between the ring 30 and the inner wall of the root 12, it flows into the breeding furnace main body 2. Specifically, by controlling the amount of the inert gas flowing in the growth furnace main body 2 and the furnace pressure, the heat shield ring 30 disposed directly above the silicon melt 14 and the inside of the rupture 12 are controlled.
  • the flow rate of the inert gas flowing through the gap D with the wall is adjusted so that it is 6.5 cm / sec or more. Is almost constant at).
  • some inert gas directly travels around the gas flow straightening tube 5 and reaches near the ceiling of the growth furnace body 2. After that, the gas flows downward from the upper part of the breeding furnace body 2 toward the exhaust gas port 11, while refluxing the inside of the breeding furnace body 2, and substantially uniformly from the respective exhaust gas ports 11 provided on the bottom surface of the breeding furnace body 2.
  • the gas is exhausted to the outside of the growth furnace through the exhaust gas pipe 7 and the collecting pipe 17.
  • the opening shape or axial cross-sectional shape (exhaust gas shape) of the exhaust gas pipe 7 communicating with the exhaust gas outlet at the bottom of the growth furnace is a circle centered on the single crystal pulling shaft.
  • the shape may be elongated along the circumferential path.
  • the shape of the exhaust gas port can be an arc shape along a circumferential path.
  • a plurality of exhaust gas ports may be formed along the plurality of circumferential paths set at different positions in the radial direction with the single crystal pulling axis as a center on the bottom portion of the growth furnace.
  • FIG. 8 shows an example in which the exhaust gas pipe 7 having the shape of the exhaust gas port shown in FIG. 7 is formed in two rows along two concentric circular paths. This As a result, the inert gas can be more uniformly refluxed.
  • the present invention is not limited only to the growth of the silicon single crystal as described above.
  • the method for producing a silicon single crystal and the apparatus for producing a semiconductor single crystal according to the present invention are applied to a method and apparatus for producing a silicon single crystal using the MCZ method in which a single crystal is grown while a magnetic field is applied to the melt.
  • the present invention is naturally possible, and the present invention can be applied to the case where another semiconductor single crystal such as a compound semiconductor is grown by the CZ method.
  • the silicon single crystal Training was conducted.
  • the diameter of the heat shielding ring 30 was 40 O mm.
  • 60 kg of polycrystalline silicon material was filled, and after filling the inside of the growth furnace with Ar gas, the heater 15 was heated.
  • a silicon melt 14 as a raw material melt was obtained.
  • the observation window 8 There was no dirt or fogging, and the diameter of the pulled silicon single crystal 23 had an error of about 1 mm from the target value, so the polycrystalline silicon material was crucible without solidifying the silicon melt 14.
  • the single crystal was grown again.
  • the amount of the raw material melt at this time was 60 kg, and a silicon single crystal 23 having the same diameter of 150 mm was grown from the silicon melt 14.
  • Example 1 using a single crystal manufacturing apparatus shown in FIG. 1 in which a set of exhaust gas pipe 7 and exhaust gas port 11 was provided at two locations, the other conditions were the same as those of Example 1 and silicon single crystal was used. Training was conducted. As a result, as in Example 1, when three silicon single crystals were pulled, clouding occurred in the observation window 8 in the furnace, making it difficult to continue the operation, and the pulling of the single crystal was terminated. After the temperature was sufficiently lowered, the inside of the furnace was observed in the same manner as in Example 1, and it was found that the amount of deposits on the ceiling of the growth furnace main body 2 and the upper part of the outer surface of the gas flow straightening tube 5 was relatively small. The adhesion was relatively uniform with little deviation. This is an inert gas Is returned to the furnace without stagnation, and evaporates from the raw material melt can be smoothly discharged to the outside of the furnace.
  • a silicon single crystal was grown.
  • the same conditions as in Example 2 were adopted except that the diameter of the heat shield ring 30 disposed at the lower end of the flow straightening tube 5 was set to be slightly larger, 410 mm.
  • the distance D between the outer circumference of the heat shield ring 30 and the inner wall of the ruppo was 15 mm, and the flow velocity of the inert gas flowing through the gap D was estimated to be approximately 8 cm / sec.
  • the pressure in the furnace was 100 hPa. Then, even after the growth of the fourth single crystal was completed, no fogging or the like was observed in the observation window portion 8 in the furnace, and the surface of the gas rectifying cylinder 5 was not so much stained by deposits.
  • a silicon single crystal was grown. Note that the same conditions as in Example 2 were adopted except that the diameter of the heat shielding ring 30 disposed at the lower end of the rectifying tube 5 was set to 39 O mm, which was smaller than that in Example 1 or 2. At this time, the distance between the outer periphery of the heat shielding ring 30 and the inner wall of the crucible was 25 mm, and the flow velocity of the inert gas flowing through the gap was estimated to be approximately 5 cmZsec. The pressure inside the furnace was 100 hPa.
  • the polycrystalline silicon raw material can be And the silicon single crystal was pulled again. Even when pulling up the second and subsequent single crystals, the amount of the raw material melt is returned to 60 kg as in the first crystal, and a single crystal with the same diameter of 15 O mm as the first crystal is grown from this raw material melt. did.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un monocristal en silicium et un dispositif de fabrication d'un monocristal semi-conducteur contenant un monocristal de silicium. Ledit procédé de fabrication dudit monocristal consiste à placer, à l'intérieur d'un fourneau de culture, un creuset (12) contenant un liquide de silicium fondu (14), à disposer des structures supérieures dans le fourneau (5, 30), pour envelopper un monocristal en culture (23), et à ajuster la vitesse du flux de gaz inerte pouvant circuler hors de la partie d'ouverture d'extrémité de ladite structure supérieure (3), lorsque le gaz inerte circule à travers un espace enveloppé par la paroi interne du creuset (12) et la paroi externe desdites structures supérieures (5, 30) jusqu'à au moins 6,5 cm par seconde, et qu'il inerte est déchargé à l'extérieur dudit fourneau (2) à travers l'espace enveloppé par les parois interne et externe, parallèlement à la culture du monocristal en silicium (23) au moyen du procédé de Czochralski, le gaz inerte pouvant s'écouler du côté supérieur en direction d'un niveau de liquide de silicium fondu (14a) dans le creuset (12) de la structure supérieure dans le fourneau (5).
PCT/JP2001/008408 2000-09-26 2001-09-26 Procede de fabrication d'un monocristal en silicium et dispositif de fabrication d'un monocristal semiconducteur WO2002027077A1 (fr)

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JP2007314375A (ja) * 2006-05-26 2007-12-06 Shin Etsu Handotai Co Ltd 単結晶製造装置
JP4716331B2 (ja) * 2006-09-29 2011-07-06 コバレントマテリアル株式会社 単結晶の製造方法
JP4907396B2 (ja) * 2007-03-16 2012-03-28 コバレントマテリアル株式会社 単結晶の製造方法
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JP7006573B2 (ja) * 2018-11-30 2022-01-24 株式会社Sumco 単結晶引き上げ装置、および、シリコン単結晶の製造方法
CN110205675A (zh) * 2019-06-26 2019-09-06 西安奕斯伟硅片技术有限公司 惰性气体的稳流调节方法、单晶硅的制造方法及单晶硅
CN113755944A (zh) * 2020-06-05 2021-12-07 西安奕斯伟材料科技有限公司 一种单晶炉热场结构、单晶炉及晶棒
CN112481693A (zh) * 2020-12-01 2021-03-12 西安奕斯伟硅片技术有限公司 一种拉晶炉
JP7052912B1 (ja) 2021-06-14 2022-04-12 信越半導体株式会社 単結晶引上げ装置
CN114197059A (zh) * 2021-12-14 2022-03-18 西安奕斯伟材料科技有限公司 单晶炉

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826095A (ja) * 1981-07-31 1983-02-16 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
EP0568183A1 (fr) * 1992-03-31 1993-11-03 Shin-Etsu Handotai Company Limited Appareil pour tirer un monocristal de silicium
JPH05306190A (ja) * 1992-04-30 1993-11-19 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
EP0702100A1 (fr) * 1993-05-31 1996-03-20 Sumitomo Sitix Corporation Appareil et procede de production d'une matiere monocristalline
JP2000233994A (ja) * 1999-02-10 2000-08-29 Mitsubishi Materials Silicon Corp シリコン単結晶の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826095A (ja) * 1981-07-31 1983-02-16 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
EP0568183A1 (fr) * 1992-03-31 1993-11-03 Shin-Etsu Handotai Company Limited Appareil pour tirer un monocristal de silicium
JPH05306190A (ja) * 1992-04-30 1993-11-19 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
EP0702100A1 (fr) * 1993-05-31 1996-03-20 Sumitomo Sitix Corporation Appareil et procede de production d'une matiere monocristalline
JP2000233994A (ja) * 1999-02-10 2000-08-29 Mitsubishi Materials Silicon Corp シリコン単結晶の製造方法

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