[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2002007200A1 - Compositions de gravure - Google Patents

Compositions de gravure Download PDF

Info

Publication number
WO2002007200A1
WO2002007200A1 PCT/JP2001/006048 JP0106048W WO0207200A1 WO 2002007200 A1 WO2002007200 A1 WO 2002007200A1 JP 0106048 W JP0106048 W JP 0106048W WO 0207200 A1 WO0207200 A1 WO 0207200A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
etching
aqueous solution
weight
resist
Prior art date
Application number
PCT/JP2001/006048
Other languages
English (en)
Japanese (ja)
Inventor
Satoshi Nanba
Taketo Maruyama
Hisaki Abe
Tetsuo Aoyama
Original Assignee
Mitsubishi Gas Chemical Company, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000214206A external-priority patent/JP2002033303A/ja
Priority claimed from JP2000214232A external-priority patent/JP2002033304A/ja
Application filed by Mitsubishi Gas Chemical Company, Inc. filed Critical Mitsubishi Gas Chemical Company, Inc.
Priority to KR10-2003-7000347A priority Critical patent/KR20030021249A/ko
Publication of WO2002007200A1 publication Critical patent/WO2002007200A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to an etching composition, and more particularly to an etching composition capable of etching a transparent conductive film under mild conditions and generating no residue.
  • Akita
  • Transparent conductive films such as ITO (indium monotin oxide) film are antistatic films
  • LCDs liquid crystal displays
  • transparent conductive films such as ITO are used as display electrodes for pixels, and are produced by etching using photolithography.
  • ferric chloride / hydrochloric acid aqueous solution iodic acid aqueous solution, phosphoric acid aqueous solution, hydrochloric acid / nitric acid aqueous solution (aqua regia) and the like have been used as an etching agent for the transparent conductive film such as the polycrystalline ITO.
  • the above-mentioned wet etching agent for the transparent conductive film, etc. corrosion to A1 etc. occurs, and selective etching proceeds from the grain boundaries, so that it is difficult to perform buttering with high accuracy.
  • An object of the present invention is to provide, as described above in the prior art, no etching residue at the time of wet etching of a transparent conductive film using an oxalic acid aqueous solution, and to perform etching under a mild condition.
  • An object of the present invention is to provide an etching agent capable of performing the following.
  • the present inventors have conducted intensive studies to solve the above problems, and as a result, have found that an aqueous solution containing oxalic acid and an aromatic hydrocarbon compound having a phenolic hydroxyl group, or oxalic acid and a nitrogen-containing carboxylic acid. It has been found that an aqueous solution containing a salt of a nitrogen-containing carboxylic acid can be etched under mild conditions when etching the transparent conductive film, and that no residue is generated, and the present invention has been completed. I came to.
  • the present invention relates to an etching composition
  • an etching composition comprising an aqueous solution containing oxalic acid and an aromatic hydrocarbon compound having a fininolic hydroxyl group, and oxalic acid and a salt of a nitrogen-containing carboxylic acid and / or a salt of a nitrogen-containing carboxylic acid. It is intended to provide an etching composition characterized by comprising an aqueous solution.
  • BRIEF DESCRIPTION OF THE FIGURES Figure 1 shows the state after forming an insulating film of SiN on a glass substrate, further forming an amorphous ITO film, applying a resist on the amorphous ITO film, and developing. ⁇ in the figure.
  • FIG. 2 is a state diagram in which the resist has been stripped after etching the substrate of FIG. 1 with a conventional etchant.
  • concentration of oxalic acid used in the present invention 0. 0 1-1 0 weight 0/0 are preferred. 0. 0 1 wt% slower etching rate is less, and in 1 0 weight 0/6 or more, the etch ing rate does not improve, not advisable.
  • aromatic hydrocarbon compound having a phenolic hydroxyl group examples include the compounds described below. Any compound having a phenolic hydroxyl group directly bonded to an aromatic hydrocarbon in the molecule may be used. It is not particularly limited to these.
  • aromatic hydrocarbon compounds having only one hydroxyl group phenol, cresol, ethyl phenol, t-ethyl phenol, t-butyl phenol, methoxy phenol, salicyl alcohol, ethyl phenol, amino phenol
  • aromatic hydrocarbon compounds having two or more hydroxyl groups catechol, resorcinol, hydroquinone, 4-methylpyrocatechol, 2-methylhydroquinone, pyrogallol, 1,2,5-benzenetriol, 1 , 3,5-benzenetriol, 2-methylphloroglucinol, 2,4,6_phloroglucinol,
  • hydroxybenzophenones dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,6-dihydroxy-14-methoxybenzophenone, 2,2 ', 5,6, -tetra Examples include hydroxybenzophenone, 2,3,4,4,6,-pentahydroxybenzophenone.
  • hydroxybenzanilides include 0-hydroxybenzanilide.
  • hydroxyanil examples include glyoxalbis (2-hydroxyanyl).
  • hydroxybiphenyls examples include biphenyldiol, biphenyltriol, and biphenyltetraol.
  • Hydroxyquinones and derivatives thereof include 2,3-hydroxy-1,4-naphthoquinone, 5-hydroxy-1,4-naphthoquinone, dihydroxyanthraquinone, 1,2-dihydroxy-13- (aminomethyl) anthraquinone N, N'-monoacetic acid [commonly known as Rizarin complexone], trihydroxyanthra Quinone and the like.
  • diphenyl or triphenylalkane derivatives diphenylmethane-2,2, -diol, 4,4 ', 4', triphenylmethanetriol, 4, 'dihydroxyfuchsone, 4,4' Dihydroxy-13-methylfuchsone, pyrocatechol violet [commonly known as PV], and the like.
  • Phenol derivatives of alkylamines such as ethylenediaminediolohydroxyphenylacetic acid [commonly known as EDDHA], N, N-bis (2-hydroxybenzyl) ethylenediamine-N, N-diacetic acid [commonly known as HBED], etc. are mentioned.
  • Alkenyl ether phenol derivatives include 3,3-ethylenedioxydiphenol.
  • Phenols having an azo group and derivatives thereof include 4,4′-bis (3,4-dihydroxyphenylazo) -1,2,2-stilbene disulfonic acid 2 ammonium [commonly known as stilbazo], 2 , 8-Dihydroxy-1- (8-hydroxy-3,6-disulfo-1-naphthylazo) -1,3,6-naphthylenedisulfonic acid, 0-0, dihydroxyazobenzene, 2-hydroxy-11 (2- Hydroxy-5-methylphenylazo) -14-naphthylenesulfonic acid [comcarmagite], chlorohydroxyphenylazinaphthol, 1,2,1-dihydroxy-6-nitro-2-nitro-1,2-nazonafrene -Sulfonic acid [commonly known as Eriochrome Black T], 2-hydroxy-11 (2-hydroxy-14-sulfo-11-naphthylazo) -1,3,6-naphthalenedisulfonic acid,
  • Heterocyclic compounds having a hydroxyl group and derivatives thereof include 8-quinolinol, 2-methyl-18-quinolinol, quinolinediol, 11- (2-pyridylazo) -12-naphthol, 2- Amino-4,6,7-pteridinetriol, 5,7,3 ', 4'-tetrahydroxyflavone [common name: luteolin], 3,3-bis [N, N-bis (carboxymethyl) aminomethyl] fluorescein [commonly known
  • Examples of the alicyclic compound having a hydroxyl group and derivatives thereof include cyclopentanol, croconic acid, cyclohexanol, cyclohexanediol, dihydroxydiquinol, trobolone, and 6- ⁇ -propylpropyltroborone.
  • the aromatic hydrocarbon compound having a phenolic hydroxyl group is preferably an aromatic hydrocarbon compound having two or more phenolic hydroxyl groups.
  • the above compounds may be used alone or in combination of two or more kinds, and the preferable concentration is 0.001 to 5% by weight in the whole etching composition.
  • the concentration of the aromatic hydrocarbon compound having Knoll hydroxyl group is zero. 0 0 0 1 weight 0/0 or less, at the time of etching, residue occurs at 5 weight 0/0 above, the ITO film E It is not preferable because the cutting speed is reduced or the dissolution is not sufficient.
  • nitrogen-containing carboxylic acid and its salt include those described below, but are not particularly limited thereto.
  • nitrogen-containing carboxylic acid having one carboxyl group and salts thereof examples include aminoacetic acid, dihydroxyethylglycine, and the like, and salts thereof.
  • Examples of the nitrogen-containing carboxylic acid having two kelpoxyl groups and salts thereof include imino diacetic acid, hydroxyethylimino diacetic acid, ethylenediamine diacetic acid, ethylenediamine dipropionic acid, and salts thereof.
  • Examples of the nitrogen-containing carboxylic acid having three carboxyl groups and salts thereof include triacetic acid triacetate, hydroxyethylethylenediamine triacetic acid, tripropionic acid 3-propionic acid, and salts thereof.
  • nitrogen-containing carboxylic acids having four carboxyl groups and salts thereof include ethylenediamine 4 acetic acid, trans-1,2-cyclohexanediamine N, N, N, N,, N-tetraacetic acid, diaminopropanol 4 Acetic acid, glycol ether terdiamine tetraacetic acid, hexamethylene diamine mono N, N, N ', N'-tetraacetic acid, diaminopropane tetraacetic acid, and the like, and salts thereof.
  • Examples of the nitrogen-containing carboxylic acid having five carboxyl groups and salts thereof include diethylenetriaminepentaacetic acid and the like, and salts thereof.
  • Examples of the nitrogen-containing carboxylic acid having six or more carboxyl groups and salts thereof include triethylenetetramine hexaacetic acid and the like, and salts thereof.
  • Other similar compounds include amine compounds capable of forming a complex such as trienolamine and salts thereof.
  • the nitrogen-containing carboxylic acids and salts thereof may be used alone or in combination of two or more.
  • the preferred concentration is 0.0001 to 5% by weight.
  • Nitrogen-containing cal As the boric acid or its salt, those having four or less carboxyl groups are preferred.
  • the nitrogen-containing carboxylic acids and concentration of the salt is 000 1 wt 0/0 hereinafter 0., during etching, residue occurs, the 5 weight 0/0 or more, E Tsuchingu rate of I TO It is not preferable because it decreases or does not dissolve sufficiently.
  • the etching composition of the present invention is used according to an ordinary method, but the operating temperature is from normal temperature to 90 ° C., and the operating time is about 0.1 to 30 minutes.
  • the present invention is suitably used for wet etching of transparent conductive films such as IZO (indium monozinc oxide) and various semiconductors, in addition to amorphous ITO.
  • transparent conductive films such as IZO (indium monozinc oxide) and various semiconductors, in addition to amorphous ITO.
  • an insulating film Si 2 is formed on a glass substrate 1, an amorphous ITO 3 is further formed, and a resist is formed on the amorphous ITO film.
  • a cleaning solution containing 3.4% by weight of oxalic acid and 0.1% by weight of, 3-dihydroxybenzoic acid was used at 40 ° C for 2 minutes.
  • the resist 4 was stripped with a basic resist stripper, washed with water, and the surface was observed with a dried SEM (electron microscope). As a result, the amorphous ITO was etched well and the residue was removed. Was not observed at all.
  • Example 1 The substrate used in Example 1 was etched at 40 ° (: for 2 minutes with a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid, washed with water, and dried. After the resist 4 was peeled off with the liquid, the resist 4 was washed 7_ As a result of observation of S, the amorphous I ⁇ was etched, but a number of residues 5 were observed as shown in Fig. 1. Comparative Example Two The substrate used in Example 1 was etched at 40 ° C. for 2 minutes using a cleaning agent which was an aqueous solution containing 2,3-dihydroxybenzoic acid at a weight of 0.1 / 0 / o. After the resist 4 was stripped with a basic resist stripper, the resist 4 was washed 7 j and dried. As a result of SEM observation, amorphous IT ⁇ was hardly etched.
  • Example 1 The substrate used in Example 1 was washed at a temperature of 40 ° C. for 2 minutes using a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid and 0.01% by weight of 2,3-dihydroxybenzaldehyde. After etching and washing with water, the resist 4 was stripped off with a basic resist stripping solution, washed 7j, and dried. As a result of SEM observation, the amorphous ITO was etched well, and no residue was observed.
  • Example 1 The substrate used in Example 1 was etched at 40 ° C. for 2 minutes using a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid and 0.3% by weight of 2,3-dihydroxybenzaldehyde. After washing with 7 7, the resist 4 was further stripped with a basic resist stripping solution, washed with water, and dried. As a result of SEM observation, the amorphous ITO was etched well, and no residue was observed.
  • a cleaning solution was an aqueous solution containing 3.4% by weight of oxalic acid and 0.3% by weight of 2,3-dihydroxybenzaldehyde.
  • oxalate 3.4 wt 0/0, 0.0 1 wt% of 2, 3 using the cleaning solution is an aqueous solution containing dihydroxybenzoic acid
  • the substrate used in Example 1 40 ° C. 2 minutes etching
  • the resist 4 was stripped off with a basic resist stripping solution, washed with water, and dried.
  • the amorphous ITO was etched well and no residue was observed.
  • oxalate 1.0 wt 0/0, 2 of 0.1 weight 0/0, 3-dihydroxybenzoic acid with a cleaning solution is an aqueous solution and containing not, the substrate used in Example 1 40 ° C. 4 min Etching was performed, and after 7 washes, the resist 4 was further stripped off with a basic resist stripping solution, followed by 7K washing and drying. As a result of SEM observation, the amorphous ITO was etched well and no residue was observed.
  • Example 1 The substrate used in Example 1 was subjected to 4 O; etching for 2 minutes using a cleaning solution that was an aqueous solution containing 5.5% by weight of oxalic acid and 0.1% by weight of 2,3-dihydroxybenzoic acid. After washing with zK, the resist 4 was further stripped with a basic resist stripping solution, washed with water, and dried. As a result of SEM observation, the amorphous ITO was etched well, and no residue was observed.
  • Acetic acid 5.5 weight 0/0, 2 of 0.1 weight 0/0, 3-dihydroxybenzoic acid with a cleaning solution is an aqueous solution you containing, Example 1 40 ° C. 2 minutes substrates used in After etching, washing with water, the resist 4 was further stripped with a basic resist stripping solution, washed with water, and dried. As a result of SE.M observation, the amorphous IT ⁇ was hardly etched.
  • Example 1 The substrate used in Example 1 was etched at 40 ° (:, 2 minutes) using a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid and 0.2% by weight of dihydroxy. After washing, the resist 4 was stripped off with a basic resist stripping solution, washed with water, and dried.As a result of SEM observation, the amorphous ITO was favorably etched, and no residue was observed. Comparative Example 4
  • the cleaning agent is an aqueous solution containing dihydroxy E chill glycine 0.2 weight 0 / o
  • the substrate used in Example 1 performs 4 O. 2 minutes etching, washed with water, and et basic resist stripping After the resist was peeled off with the liquid, it was washed with water and dried. As a result of SEM observation, the amorphous ITO was hardly etched.
  • Example 1 The substrate used in Example 1 was etched at 40 ° C. for 2 minutes using a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid and 0.2% by weight of hydroxyethyliminodiacetic acid. After washing with 7_, the resist was further stripped with a basic resist stripping solution, washed with water, and dried. As a result of SEM observation, the amorphous ITO was favorably etched, and no residue was observed.
  • oxalate 3.4 wt 0/0, 0.2 weight 0/0 of the two tri-port 3 using a cleaning solution is an aqueous solution containing acetic acid, 4 0 ° C the substrate used in Example 1, 2 minute etch After washing with water, the resist was stripped off with a basic resist stripping solution, then washed with 7 and dried. As a result of SEM observation, the amorphous ITO was etched well and no residue was observed.
  • Example 1 The substrate used in Example 1 was etched at 40 ° C. for 2 minutes using a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid and 0.2% by weight of ethylenediaminetetraacetic acid. After washing with water, the resist was stripped with a basic resist stripper, washed with water, and dried. As a result of SEM observation, the amorphous ITO was favorably etched, and no residue was observed.
  • Example 1 The substrate used in Example 1 was etched at 40 ° C for 2 minutes using a cleaning solution that was an aqueous solution containing 3.4% by weight of oxalic acid and 2.0% by weight of dihydroxyethylglycine. After washing, the resist was stripped off with a basic resist stripping solution, washed with water, and dried. As a result of SEM observation, the amorphous ITO was etched well, and no residue was observed.
  • oxalic acid with a cleaning solution is an aqueous solution containing dihydroxy E chill glycine 0.2 weight 0/0, 4 0 ° the substrate used in Example 1 (:, 2 min Etsu quenching After washing with 7j, the resist was stripped with a basic resist stripping solution, washed with water and dried, and as a result of S ⁇ Observation, the amorphous I ⁇ 0 was well etched and no residue was observed.
  • a cleaning solution is an aqueous solution containing dihydroxy E chill glycine 0.2 weight 0/0, 4 0 ° the substrate used in Example 1 (:, 2 min Etsu quenching After washing with 7j, the resist was stripped with a basic resist stripping solution, washed with water and dried, and as a result of S ⁇ Observation, the amorphous I ⁇ 0 was well etched and no residue was observed.
  • a cleaning solution is an aqueous solution containing dihydroxy E chill glycine 0.2 weight 0/0,
  • Example 1 The substrate used in Example 1 was etched at 40 ° C. for 2 minutes using a cleaning solution that was an aqueous solution containing 5.5% by weight of oxalic acid and 0.2% by weight of dihydroxyethylglycine. After the resist was stripped with a basic resist stripper, the resist was washed 7 and dried. As a result of SEM observation, the amorphous ITO was etched well, and no residue was observed.
  • Acetic 5. and 5 wt%, using a cleaning solution is an aqueous solution containing dihydroxy E chill glycine 0.2 weight 0/6, the substrate used in Example 1 carried out 40 ° C. 2 minutes Etsuchin grayed, 7j After washing, the resist was stripped off with a basic resist stripping solution, washed 7j, and dried. As a result of SEM observation, is amorphous ITO almost completely etched? Tsuta Industrial applicability
  • the transparent conductive film can be etched under mild conditions, and no residue is generated.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)

Abstract

L'invention concerne une composition de gravure comprenant une solution aqueuse contenant de l'acide oxalique ainsi qu'un composé hydrocarbure aromatique possédant un groupe hydroxyle phénolique; elle concerne également une composition de gravure caractérisée en ce qu'elle est une solution aqueuse contenant de l'acide oxalique et un acide carboxylique azoté et/ou un sel de celui-ci. A l'aide de ces substances de gravure, il est possible d'exécuter une gravure dans des conditions douces sans production d'un quelconque résidu de gravure.
PCT/JP2001/006048 2000-07-14 2001-07-12 Compositions de gravure WO2002007200A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR10-2003-7000347A KR20030021249A (ko) 2000-07-14 2001-07-12 에칭용 조성물

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000214206A JP2002033303A (ja) 2000-07-14 2000-07-14 エッチング用組成物
JP2000-214232 2000-07-14
JP2000-214206 2000-07-14
JP2000214232A JP2002033304A (ja) 2000-07-14 2000-07-14 エッチング用組成物

Publications (1)

Publication Number Publication Date
WO2002007200A1 true WO2002007200A1 (fr) 2002-01-24

Family

ID=26596051

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006048 WO2002007200A1 (fr) 2000-07-14 2001-07-12 Compositions de gravure

Country Status (3)

Country Link
KR (1) KR20030021249A (fr)
TW (1) TW527442B (fr)
WO (1) WO2002007200A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5431014B2 (ja) * 2009-05-01 2014-03-05 関東化学株式会社 しゅう酸インジウム溶解剤組成物
KR102324275B1 (ko) * 2018-05-03 2021-11-09 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
KR102483009B1 (ko) * 2019-11-01 2022-12-29 삼성에스디아이 주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448631A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 透明導電膜のエッチング方法
JPH0562966A (ja) * 1991-09-04 1993-03-12 Fujitsu Ltd 透明導電膜のエツチング方法
JPH07141932A (ja) * 1993-11-18 1995-06-02 Kanto Chem Co Inc 透明導電膜のエッチング液組成物
JPH11162916A (ja) * 1997-11-28 1999-06-18 Nec Corp 基板の洗浄方法及び洗浄溶液
JP2000150457A (ja) * 1998-11-09 2000-05-30 Mitsubishi Gas Chem Co Inc 透明導電性膜のエッチング方法
JP2001176864A (ja) * 1999-12-20 2001-06-29 Toshiba Electronic Engineering Corp 透明導電膜のエッチング液組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448631A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 透明導電膜のエッチング方法
JPH0562966A (ja) * 1991-09-04 1993-03-12 Fujitsu Ltd 透明導電膜のエツチング方法
JPH07141932A (ja) * 1993-11-18 1995-06-02 Kanto Chem Co Inc 透明導電膜のエッチング液組成物
JPH11162916A (ja) * 1997-11-28 1999-06-18 Nec Corp 基板の洗浄方法及び洗浄溶液
JP2000150457A (ja) * 1998-11-09 2000-05-30 Mitsubishi Gas Chem Co Inc 透明導電性膜のエッチング方法
JP2001176864A (ja) * 1999-12-20 2001-06-29 Toshiba Electronic Engineering Corp 透明導電膜のエッチング液組成物

Also Published As

Publication number Publication date
TW527442B (en) 2003-04-11
KR20030021249A (ko) 2003-03-12

Similar Documents

Publication Publication Date Title
TWI332126B (en) Photoresist stripping solution
TW201726895A (zh) 蝕刻組合物及其使用方法
JP2001100436A (ja) レジスト剥離液組成物
TWI398725B (zh) A photosensitive resin composition and a photosensitive resin laminate using the same
WO2002007200A1 (fr) Compositions de gravure
JP3953600B2 (ja) レジスト膜剥離剤及びそれを用いた薄膜回路素子の製造方法
TWI364632B (en) Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them
US9176383B2 (en) Photoresist composition and method of manufacturing thin film transistor substrate using the same
JP2001176864A (ja) 透明導電膜のエッチング液組成物
TWI559102B (zh) Resin stripping solution
JP2002156765A (ja) リンスおよび剥離液組成物
TW594425B (en) Photoresist stripping liquid compositions and a method of stripping photoresists using the same
JP2002033303A (ja) エッチング用組成物
TWI798068B (zh) 用於從一基材移除一光阻劑的組合物及其用途
JP5885045B1 (ja) レジスト剥離液とその製造方法
JP5885043B1 (ja) レジスト剥離液とその製造方法
JP5206177B2 (ja) レジスト剥離液組成物およびそれを用いた半導体素子の製造方法
JP4494897B2 (ja) 感光性樹脂組成物除去用洗浄剤組成物
JP4415228B2 (ja) レジスト剥離液用組成物
KR100503268B1 (ko) 에테르와 케톤을 함유하는 에지 비드 제거용 세정 용액 및이를 이용한 세정 방법
KR100469558B1 (ko) 알코올과 에테르를 포함하는 새로운 에지 비드 제거용세정 용액 및 이를 이용한 세정 방법
JP2000147794A (ja) フォトレジスト剥離液
JP4921514B2 (ja) 銀及び／又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置
KR20020063096A (ko) 포토레지스트의 에지 비드를 제거하는 세정용액 및 이를이용한 세정방법
JP2001100435A (ja) パターン形成方法及び洗浄液

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR SG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020037000347

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020037000347

Country of ref document: KR