WO2002067364A1 - Ask modulator for nrd guide - Google Patents
Ask modulator for nrd guide Download PDFInfo
- Publication number
- WO2002067364A1 WO2002067364A1 PCT/KR2002/000132 KR0200132W WO02067364A1 WO 2002067364 A1 WO2002067364 A1 WO 2002067364A1 KR 0200132 W KR0200132 W KR 0200132W WO 02067364 A1 WO02067364 A1 WO 02067364A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nrd guide
- teflon
- air gap
- ask modulator
- nrd
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C7/00—Modulating electromagnetic waves
- H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
- H03D7/04—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes having a partially negative resistance characteristic, e.g. tunnel diode
Definitions
- the present invention relates to a millimeter wave ASK (Amplitude Shift
- the present invention provides a method to improve the modulation characteristic in the 60GHz range by a structure having a predetermined air gap in between the termination part of an NRD Guide (3) and a diode mount (6) on which a Schottky (14) diode is mounted, intending to improve the receive sensitivity at the receiver irrespective of the signal attenuation or noise.
- the preferred embodiment of the present invention concerns the 60GHz range. However, the present invention may be implemented in other frequency ranges.
- Figure 1 illustrates a perspective view of a millimeter wave ASK modulator using the NRD Guide according to the first preferred embodiment of the present invention.
- Figure 2 illustrates a top view of the ASK modulator without the upper conducting plate .
- Figure 3 illustrates a side view of the ASK modulator.
- Figure 4 illustrates a perspective view of a diode mount (6) on which a Schottky diode is mounted.
- Figure 5 is a graph that illustrates the result of return loss measurement depending on the thickness of the high permittivity sheet (5) inserted in the front of the diode mount, when the air gap is 1mm and the thickness of the front Teflon (4) is 1.5mm in the first preferred embodiment.
- Figure 6 is a graph that illustrates the result of return loss measurement depending on the thickness of the high permittivity sheet (5) inserted in the front of the diode mount, when the air gap is 0.5mm and the thickness of the front Teflon (4) is 1.5mm in the first preferred embodiment.
- Figure 7 is a graph that illustrates the result of return loss measurement depending on the thickness of the front Teflon (4) inserted in the front of the diode mount, when the air gap is 0.5mm and the thickness of high permittivity sheet (5) is 0.18mm in the first preferred embodiment.
- Figure 8 is a graph that illustrates the change of frequency depending on the thickness of the high permittivity sheet (5) inserted in the front of the diode mount, when the air gap is 1mm and 0.5mm and the thickness of the front Teflon (4) is 1.5mm in the first preferred embodiment.
- Figure 9 is a graph that illustrates the change of frequency depending on the thickness of the front Teflon (4), when the air gap is 0.5mm and the thickness of the high permittivity sheet (5) is 0.18mm in the first preferred embodiment.
- Figure 10 illustrates a perspective view of the millimeter wave ASK modulator using the NRD Guide without air gap according to the second preferred embodiment of the present invention.
- Figure 11 illustrates a top view of the ASK modulator which does not have air gap without the upper conducting plate.
- Figure 12 illustrates a side view of the ASK modulator which does not have air gap.
- Figure 13 is a graph that illustrates the change of outputs corresponding to the absorption/reflection depending on the thickness of the high permittivity sheet.
- Schottky Barrier Diode (referred to as the Schottky Diode in the present invention)
- the first preferred embodiment of the present invention comprises: (in the order set forth herein) an NRD guide (3) which is a passage of wave; air gap between the NRD Guide (3) and the front Teflon (4); the front Teflon (4); a high permittivity sheet (5); a diode mount (6); and the rear Teflon (7).
- Parameters that control the difference in the output of the frequency in the ASK modulator and the reflected output in the first preferred embodiment are the air gap, the front Teflon (4), the high permittivity sheet (5) and the rear Teflon (7). These parameters, when appropriately adjusted, may cause the desired difference in the frequency and the reflected output to be obtained in the present invention.
- the second preferred embodiment of the present invention is comprised, without the air gap between a diode mount (17) and an NRD Guide (16) which is a passage of wave, by inserting a high permittivity sheet for the impedance matching with the NRD Guide (16) and by inserting the rear Teflon (18).
- the gap between the upper and lower conducting plates (1, 2) of the ASK modulator of the present invention is 2.25mm because the gap between the upper and lower conducting plates must be not greater than a half wavelength according to the NRD Guide theory.
- the width of the NRD Guide is 2.5mm.
- a Schottky diode (14) is loaded on a metal thin film in the choke shape on a dielectric substrate (13) that has the thickness of 0.3mm and the permittivity of 2.6 as illustrated in Figure 4.
- the part of the metal thin film (12) where the Schottky diode is loaded may be considered to be composed of two antennas.
- the Schottky diode (14) is forward biased, two antennas are connected and absorb the incident wave.
- the Schottky diode (14) is reverse biased, two antennas are separated and reflect the incident wave.
- the Schottky diode(14) is forward biased, the incident wave entering the diode mount (6) is absorbed and if the Schottky diode is reverse biased, the incident wave entering the diode mount (6) is reflected.
- the output of millimeter wave that is incident and then reflected may be modulated by controlling the degree of absorption.
- the difference between the reflected outputs was feeble.
- the present invention comprises the air gap and uses the front Teflon (4) and the high permittivity sheet (5).
- Figure 5 illustrates the return loss depending on the thickness of the high permittivity sheet when the Schottky diode is forward or reverse biased.
- the width of the air gap is 1mm and the length of the front Teflon (4) and of the rear Teflon (7) is 1.5mm.
- the difference between reflected outputs is at least 30dB.
- the antenna of the diode mount (6) on which non-biased Schottky diode (14) is mounted reflects 500mW which is attenuated from the incident wave by 30dB.
- the Schottky diode (14) is forward biased, the incident wave is absored and the reflected output becomes lmW.
- Figure 6 illustrates the return loss depending on the thickness of the high permittivity sheet, when the width of air gap is 0.5mm and the rest of the conditions are the same as those in Figure 5.
- Figure 7 illustrates return loss depending on the thickness of the front Teflon when the high permittivity sheet is 0.18mm thick, the air gap is 0.5mm wide and the rear Teflon is 1.5mm thick.
- the maximum output difference of the reflected wave depending on the bias applied to the Schottky diode (14) is obtained when the front Teflon is 1.3mm thick and such maximum difference is about 32dB.
- Figure 8 and Figure 9 illustrate how the usable frequency range may be chosen corresponding to the thickness of the high permittivity sheet (5) and the front Teflon (4).
- Figure 8 illustrates the change of frequency depending on the thickness of the high permittivity sheet (5)
- Figure 9 illustrates the change of frequency depending on the thickness of the front Teflon (4). (Second preferred embodiment)
- Figure 10 Figure 11 and Figure 12 illustrate a perspective view, a top view and a cross sectional view of an ASK modulator according to the second preferred embodiment of the present invention wherein the air gap does not exist.
- the top view in Figure 11 and the cross sectional view in Figure 12 include a schematic diagram of incident wave and reflected wave.
- Figure 13 illustrates the change of output according to ON/OFF of bias corresponding to the thickness of the high permittivity sheet (19) inserted in between the NRD Guide (16) and the diode Mount (17) for the impedance matching.
- the front Teflon (4), the high permittivity sheet (5), the diode mount (6) and the rear Teflon (7) are mounted with a certain air gap from the termination part of the NRD Guide, showing that the modulation ratio of millimeter waves may be improved.
- the modulation ratio and the usable frequency range may be adjusted corresponding to the width of air gap, the thickness of the front Teflon (4) and the thickness of the high permittivity sheet. Because the air gap does not exist between the NRD Guide (16) and the diode mount (17) in the second preferred embodiment of the present invention, the characteristics of the reflection coefficient are not as good as those of the first preferred embodiment. However, in the second preferred embodiment, the modulation may be performed with good quality through a broader band.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Waveguides (AREA)
Abstract
The present invention relates to an ASK modulator using an NRD gude. According to the present invention, by installing a diode mount which is equipped with the Schottky Barrier Diode on the end of the NRD gude, the modulation is made possible through the repeated variation of the reflected output depending on the degree of absorption against the incident oscillated wave coming through the NRD. In addition, the present invention makes it possible to accomplish the ASK modulation with the excellent absorption/reflection ratios because of the air gap inserted between the end of the NRD guide and the diode mount, which enhances the VSWR characteristic.
Description
ASK MODULATOR FOR NRD GUIDE
TECHNICAL FIELD The present invention relates to a millimeter wave ASK (Amplitude Shift
Keying) modulator in the millimeter wave band using the NRD Guide (Non Radiative Dielectric waveGuide) and the Schottky barrier diode.
BACKGROUND ART In order to increase the quantity of data transmitted through wireless communication devices, it is necessary to use the high frequency so that a lot of data may be transmitted in a short period of time. However, if high frequency is used, the wavelength becomes short and thus the transmission loss may easily occur. Generally, the MMIC (Monolithic Microwave Integrated Circuit) method is used as a technology of processing the frequency range beyond the microwave band. However, this method has a shortcoming in that there is a drastic transmission loss of about 60dB per lm at the frequency of 50GHz. Thus, it is difficult to construct circuits for the high frequency using such technology in the related art.
In the related art, it has been possible to obtain the ASK modulation by inserting a Schottky diode at termination part of the NRD Guide and by adjusting the output of the reflected millimeter wave, repeating the absorption and reflection processes. However, because the difference in the outputs of the absorbed and reflected millimeter waves is so small that the receive sensitivity at the receiver may not be of good quality due to the signal attenuation or noise.
DISCLOSURE OF THE INVENTION
The present invention provides a method to improve the modulation characteristic in the 60GHz range by a structure having a predetermined air gap in between the termination part of an NRD Guide (3) and a diode mount (6) on which a Schottky (14) diode is mounted, intending to improve the receive sensitivity at the receiver irrespective of the signal attenuation or noise. The preferred embodiment of the present invention concerns the 60GHz range. However, the present invention may be implemented in other frequency ranges.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 illustrates a perspective view of a millimeter wave ASK modulator using the NRD Guide according to the first preferred embodiment of the present invention.
Figure 2 illustrates a top view of the ASK modulator without the upper conducting plate .
Figure 3 illustrates a side view of the ASK modulator.
Figure 4 illustrates a perspective view of a diode mount (6) on which a Schottky diode is mounted.
Figure 5 is a graph that illustrates the result of return loss measurement depending on the thickness of the high permittivity sheet (5) inserted in the front of the diode mount, when the air gap is 1mm and the thickness of the front Teflon (4) is 1.5mm in the first preferred embodiment.
Figure 6 is a graph that illustrates the result of return loss measurement depending on the thickness of the high permittivity sheet (5) inserted in the front of the
diode mount, when the air gap is 0.5mm and the thickness of the front Teflon (4) is 1.5mm in the first preferred embodiment.
Figure 7 is a graph that illustrates the result of return loss measurement depending on the thickness of the front Teflon (4) inserted in the front of the diode mount, when the air gap is 0.5mm and the thickness of high permittivity sheet (5) is 0.18mm in the first preferred embodiment.
Figure 8 is a graph that illustrates the change of frequency depending on the thickness of the high permittivity sheet (5) inserted in the front of the diode mount, when the air gap is 1mm and 0.5mm and the thickness of the front Teflon (4) is 1.5mm in the first preferred embodiment.
Figure 9 is a graph that illustrates the change of frequency depending on the thickness of the front Teflon (4), when the air gap is 0.5mm and the thickness of the high permittivity sheet (5) is 0.18mm in the first preferred embodiment.
Figure 10 illustrates a perspective view of the millimeter wave ASK modulator using the NRD Guide without air gap according to the second preferred embodiment of the present invention.
Figure 11 illustrates a top view of the ASK modulator which does not have air gap without the upper conducting plate.
Figure 12 illustrates a side view of the ASK modulator which does not have air gap.
Figure 13 is a graph that illustrates the change of outputs corresponding to the absorption/reflection depending on the thickness of the high permittivity sheet.
**Description of the codes for important parts of diagrams**
1 : Upper Conducting Plate
2 : Lower Conducting Plate 3, 16 : NRD Guide 4 : Front Teflon 5, 19 : High Permittivity Sheet 6, 17 : Diode Mount
7, 18 : Rear Teflon
8, 15 : Bias Cable 9 : Incident Wave 10 : Reflected Wave 11 : Wave (that is incident and reflected in the air gap)
12 : Metal (Copper) Thin Film
13 : Dielectric Substrate
14 : Schottky Barrier Diode (referred to as the Schottky Diode in the present invention)
BEST MODES FOR CARRYING OUT THE INVENTION
The first preferred embodiment of the present invention comprises: (in the order set forth herein) an NRD guide (3) which is a passage of wave; air gap between the NRD Guide (3) and the front Teflon (4); the front Teflon (4); a high permittivity sheet (5); a diode mount (6); and the rear Teflon (7).
Parameters that control the difference in the output of the frequency in the ASK modulator and the reflected output in the first preferred embodiment are the air gap, the front Teflon (4), the high permittivity sheet (5) and the rear Teflon (7). These parameters, when appropriately adjusted, may cause the desired difference in the
frequency and the reflected output to be obtained in the present invention.
The second preferred embodiment of the present invention is comprised, without the air gap between a diode mount (17) and an NRD Guide (16) which is a passage of wave, by inserting a high permittivity sheet for the impedance matching with the NRD Guide (16) and by inserting the rear Teflon (18).
( First preferred embodiment)
The gap between the upper and lower conducting plates (1, 2) of the ASK modulator of the present invention is 2.25mm because the gap between the upper and lower conducting plates must be not greater than a half wavelength according to the NRD Guide theory. The width of the NRD Guide is 2.5mm.
A Schottky diode (14) is loaded on a metal thin film in the choke shape on a dielectric substrate (13) that has the thickness of 0.3mm and the permittivity of 2.6 as illustrated in Figure 4. The part of the metal thin film (12) where the Schottky diode is loaded may be considered to be composed of two antennas. When the Schottky diode (14) is forward biased, two antennas are connected and absorb the incident wave. In contrast, when the Schottky diode (14) is reverse biased, two antennas are separated and reflect the incident wave. In other words, if the Schottky diode(14) is forward biased, the incident wave entering the diode mount (6) is absorbed and if the Schottky diode is reverse biased, the incident wave entering the diode mount (6) is reflected. In the ASK modulation, the output of millimeter wave that is incident and then reflected may be modulated by controlling the degree of absorption. In the ASK modulation using the NRD Guide of the related art without the air gap, the difference between the reflected outputs was feeble. The present invention comprises the air gap and uses the front Teflon (4) and the high permittivity sheet (5).
Figure 5 illustrates the return loss depending on the thickness of the high permittivity sheet when the Schottky diode is forward or reverse biased. In this case, the width of the air gap is 1mm and the length of the front Teflon (4) and of the rear Teflon (7) is 1.5mm. When the high permittivity sheet (5) is 0.12mm thick, the difference between reflected outputs is at least 30dB. For example, when the output of incident wave is 1W, the antenna of the diode mount (6) on which non-biased Schottky diode (14) is mounted reflects 500mW which is attenuated from the incident wave by 30dB. In contrast, when the Schottky diode (14) is forward biased, the incident wave is absored and the reflected output becomes lmW. Figure 6 illustrates the return loss depending on the thickness of the high permittivity sheet, when the width of air gap is 0.5mm and the rest of the conditions are the same as those in Figure 5. By comparing the results shown in Figure 6 and Figure 5, it is found that the high permittivity sheet has less influence when the width of the air gap is 0.5mm than when it is 1mm. Figure 7 illustrates return loss depending on the thickness of the front Teflon when the high permittivity sheet is 0.18mm thick, the air gap is 0.5mm wide and the rear Teflon is 1.5mm thick. The maximum output difference of the reflected wave depending on the bias applied to the Schottky diode (14) is obtained when the front Teflon is 1.3mm thick and such maximum difference is about 32dB. Figure 8 and Figure 9 illustrate how the usable frequency range may be chosen corresponding to the thickness of the high permittivity sheet (5) and the front Teflon (4). Figure 8 illustrates the change of frequency depending on the thickness of the high permittivity sheet (5) and Figure 9 illustrates the change of frequency depending on the thickness of the front Teflon (4).
(Second preferred embodiment)
Figure 10, Figure 11 and Figure 12 illustrate a perspective view, a top view and a cross sectional view of an ASK modulator according to the second preferred embodiment of the present invention wherein the air gap does not exist. The top view in Figure 11 and the cross sectional view in Figure 12 include a schematic diagram of incident wave and reflected wave.
Figure 13 illustrates the change of output according to ON/OFF of bias corresponding to the thickness of the high permittivity sheet (19) inserted in between the NRD Guide (16) and the diode Mount (17) for the impedance matching. The bigger the difference between absorption and reflection is, the better modulation ratio becomes.
INDUSTRIAL APPLICABILITY
In the first preferred embodiment of the present invention, the front Teflon (4), the high permittivity sheet (5), the diode mount (6) and the rear Teflon (7) are mounted with a certain air gap from the termination part of the NRD Guide, showing that the modulation ratio of millimeter waves may be improved.
Also, the modulation ratio and the usable frequency range may be adjusted corresponding to the width of air gap, the thickness of the front Teflon (4) and the thickness of the high permittivity sheet. Because the air gap does not exist between the NRD Guide (16) and the diode mount (17) in the second preferred embodiment of the present invention, the characteristics of the reflection coefficient are not as good as those of the first preferred embodiment. However, in the second preferred embodiment, the modulation may be performed with good quality through a broader band.
Claims
1. An NRD Guide using a millimeter wave ASK modulator, wherein the air gap is formed between an NRD Guide which is a passage of wave and the front Teflon and wherein next the air gap, the front Teflon, a high permittivity sheet, a diode mount and the rear Teflon are mounted sequentially in the order set forth above for the millimeter wave modulation using an NRD Guide.
2. The NRD Guide using a millimeter wave ASK modulator of claim 1, wherein a certain air gap exists in between the NRD Guide and the front Teflon for the reduction of noise and signal attenuation.
3. The NRD Guide using a millimeter wave ASK modulator of claim 1, wherein, in order to obtain the desired difference between the frequency and the reflected output, it is possible to control the size of the air gap, the size of the front Teflon and the rear Teflon and the thickness of the high permittivity sheet, which are parameters that regulate the difference between the frequency of the ASK modulator and the reflected output.
4. An NRD Guide using a millimeter wave ASK modulator, wherein the impedance matching with the NRD Guide is conducted by eliminating the air gap between a diode mount and the NRD Guide that is a passage of wave and simply by inserting a high permittivity sheet and wherein the rear Teflon is inserted, for the millimeter wave modulation using an NRD Guide.
5. The NRD Guide using a millimeter wave ASK modulator of claim 4, wherein, in order to obtain the desired difference between the frequency and the reflected output, it is possible to control the size of the rear Teflon and the thickness of the high permittivity sheet, which are parameters that regulate the difference between the frequency of the ASK modulator and the reflected output.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020010008332A KR100358981B1 (en) | 2001-02-20 | 2001-02-20 | ASK Modulator for NRD Guide |
| KR2001/8332 | 2001-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002067364A1 true WO2002067364A1 (en) | 2002-08-29 |
Family
ID=19705978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2002/000132 WO2002067364A1 (en) | 2001-02-20 | 2002-01-29 | Ask modulator for nrd guide |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100358981B1 (en) |
| CN (1) | CN1265500C (en) |
| WO (1) | WO2002067364A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2616440C1 (en) * | 2015-11-16 | 2017-04-14 | федеральное государственное бюджетное образовательное учреждение высшего образования "Дагестанский государственный технический университет" | Codes-switching modulator of microwave electromagnetic oscillations in form of multilayer surface mobius with the p-i-n-diodes |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0983216A (en) * | 1995-09-08 | 1997-03-28 | Mitsubishi Electric Corp | Nrd guide amplifier |
| JP2000059114A (en) * | 1998-08-04 | 2000-02-25 | Sharp Corp | Frequency adjusting device for nrd guide millimeter wave band oscillator |
-
2001
- 2001-02-20 KR KR1020010008332A patent/KR100358981B1/en not_active IP Right Cessation
-
2002
- 2002-01-29 WO PCT/KR2002/000132 patent/WO2002067364A1/en not_active Application Discontinuation
- 2002-01-29 CN CNB028049594A patent/CN1265500C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0983216A (en) * | 1995-09-08 | 1997-03-28 | Mitsubishi Electric Corp | Nrd guide amplifier |
| JP2000059114A (en) * | 1998-08-04 | 2000-02-25 | Sharp Corp | Frequency adjusting device for nrd guide millimeter wave band oscillator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1265500C (en) | 2006-07-19 |
| KR100358981B1 (en) | 2002-11-01 |
| CN1491452A (en) | 2004-04-21 |
| KR20010044421A (en) | 2001-06-05 |
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