WO2002052623A1

WO2002052623A1 - Electron beam exposure system and electron beam irradiation position calibrating member

Info

Publication number: WO2002052623A1
Application number: PCT/JP2001/011524
Authority: WO
Inventors: Harunobu Muto; Hiroshi Yano
Original assignee: Advantest Corporation
Priority date: 2000-12-27
Filing date: 2001-12-27
Publication date: 2002-07-04
Also published as: JP2002198298A

Abstract

A calibrating member (200) for calibrating an electron beam irradiation position in an electron beam exposure system, comprising a substrate (202), and a mark unit (204) provided on the substrate (202), for detecting an electron beam irradiation position. The mark unit (204) may have electron-beam-irradiated upper portion (204a) larger in area than a lower portion (204b). The substrate (202) may have a groove unit (206) in a region adjacent to the mark unit (204).

Description

Description Electron beam exposure equipment and members for calibrating the irradiation position of electron beam

The present invention relates to an electron beam exposure apparatus and a member for calibrating an irradiation position of an electron beam. This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application shall be incorporated into this application by reference, and shall be part of the description of this application.

Japanese Patent Application No. 2 0 0 0 3 9 7 8 0 0 Filing Date 1 2/27/2012 Background Art

Conventionally, an electron beam exposure apparatus that exposes a pattern on a wafer by an electron beam has been known. A conventional electron beam exposure apparatus deflects an electron beam by a deflector and irradiates the electron beam on a predetermined region of a wafer. In order to irradiate a desired position on the wafer with the electron beam, it is necessary to correct the irradiation position of the electron beam in advance.

FIG. 1 shows a calibration member 12 in a conventional electron beam exposure apparatus 10. The calibration member 12 includes a substrate 16 made of silicon or the like provided on the wafer stage 14, a mark portion 18 provided on the substrate 16, and an electron beam irradiated on the mark portion 18. And a detection unit 20 for detecting electrons radiated or scattered from the mark unit 18. The electron beam exposure apparatus 10 deflects the electron beam by the deflector 22 and scans the mark section 18 with the electron beam. The detector 20 detects electrons scattered from the mark 18 when the mark 18 is irradiated with an electron beam. The electron beam exposure apparatus 10 detects the position of the edge from the timing at which the electron beam scans the edge of the mark section 18 and calibrates the irradiation position of the electron beam.

However, in the conventional electron beam exposure apparatus, when irradiating the mark section 18 with an electron beam, the detection section 20 also detects electrons scattered from the side surface of the edge of the mark section 18. There was a problem that would. In addition, when the substrate 16 is irradiated with the electron beam, there is a problem that the detection unit 20 also detects electrons scattered from the substrate 16. Therefore, the detection unit 20 cannot accurately detect the position of the edge of the mark unit 16 and cannot detect the accurate irradiation position of the electron beam.

Therefore, an object of the present invention is to provide an electron beam exposure apparatus and a calibration member that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention

According to a first embodiment of the present invention, there is provided an electron beam exposure apparatus for exposing a pattern on a wafer by using an electron beam, comprising: a wafer stage on which a wafer is placed; and a wafer stage. An electron beam exposure apparatus, comprising: a mark portion for detecting an irradiation position of an electron beam, wherein the mark portion has an upper area irradiated with the electron beam larger than a lower area. I will provide a.

The upper part may have two mutually perpendicular sides projecting from the lower part in a direction substantially perpendicular to the electron beam irradiation direction.

The electron beam exposure apparatus may further include a plurality of electron beam generators each generating an electron beam, and a plurality of mark units corresponding to the plurality of electron beam generators. According to a second aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam, comprising: a wafer stage on which a wafer is mounted; a substrate mounted on the wafer stage; A mark portion for detecting an irradiation position of the electron beam, wherein the substrate has a groove in a region adjacent to the mark portion.

The groove may be formed so as to extend downward along the electron beam irradiation direction. The groove may be formed by etching the substrate using the mark as a mask. No.

The electron beam exposure apparatus may further include a plurality of electron beam generators each generating an electron beam, and a plurality of mark units corresponding to the plurality of electron beam generators. According to a third aspect of the present invention, there is provided a calibration member for calibrating an irradiation position of an electron beam in an electron beam exposure apparatus, wherein the calibration member is provided on the substrate and detects an irradiation position of the electron beam. And a mark part, wherein the mark part has an upper area irradiated with the electron beam larger than a lower area. The upper part may have two mutually perpendicular sides projecting from the lower part in a direction substantially perpendicular to the electron beam irradiation direction. The calibration member may further include a plurality of mark portions arranged corresponding to the intervals between the electron beams.

According to a fourth aspect of the present invention, there is provided a calibration member for calibrating an irradiation position of an electron beam in an electron beam exposure apparatus, wherein the calibration member is provided on the substrate and detects an irradiation position of the electron beam. A calibration member, wherein the substrate has a groove in a region in contact with the mark.

The groove may be formed so as to extend downward along the electron beam irradiation direction. The groove may be formed by etching the substrate using the mark as a mask. The calibration member may further include a plurality of mark portions arranged corresponding to the intervals between the electron beams.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a calibration member for calibrating an electron beam irradiation position in an electron beam exposure apparatus, comprising: a mark for detecting an electron beam irradiation position on a substrate. A method for manufacturing a calibration member, comprising: a step of forming a groove; and a step of forming a groove by etching a substrate using a mark as a mask. The step of forming the groove may include the step of providing the groove in a region adjacent to the mark on the substrate.

Note that the above summary of the present invention does not enumerate all of the necessary features of the present invention, and a sub-combination of these features may also be an invention. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view showing a calibration member in a conventional electron beam exposure apparatus. FIG. 2 is a configuration diagram of the electron beam exposure apparatus according to the first embodiment of the present invention. FIG. 3 is a top view of the wafer stage according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing one embodiment of the calibration member shown in FIG.

FIG. 5 is a top view of the calibration member shown in FIG.

FIG. 6 is a sectional view showing another embodiment of the calibration member shown in FIG.

FIG. 7 is a top view of the calibration member according to one embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the scope of the patent request, and a combination of features described in the embodiments. Not all are essential to the solution of the invention.

FIG. 2 shows a configuration of an electron beam exposure apparatus 100 according to the first embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 102 for performing a predetermined exposure process on a wafer 150 by an electron beam, and a control system 1 for controlling the operation of each component included in the exposure unit 102. 60.

The exposure unit 102 generates electron beams inside the housing 104, an electron beam forming unit 110 for forming a desired cross-sectional shape of the electron beams, and a wafer 15 The irradiation switching means 130 for independently switching whether or not to irradiate the electron beam for each electron beam, and the wafer projection system 140 for adjusting the direction and size of the image of the pattern transferred to the wafer 150 Including an electron optical system. Further, the exposure unit 102 includes a wafer stage 1502 on which a calibration member 200 for calibrating the electron beam deflection by the wafer 150 and the deflecting unit 144 is provided. A stage system including a wafer stage drive unit 154 for driving the stage 152 is provided. The calibration member 200 includes a substrate, and a mark portion provided on the substrate for detecting an irradiation position of the electron beam. The exposure unit 102 further includes an electron detection unit 210 that detects electrons emitted or scattered from the calibration member 200 when the calibration member 200 is irradiated with an electron beam. The exposure unit 102 may include a plurality of electron detection units 210.

The electron beam shaping means 110 includes a plurality of electron guns 112 for generating a plurality of electron beams, and a first shaping device having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beam. Member 1 1 4 and second molded member 1 2 2, 1st multi-axis electron lens 1 16 for independently converging multiple electron beams and adjusting the focus of electron beam 1st molded member 1 1 It has a first shaping / deflecting unit 118 and a second shaping / deflecting unit 120 for independently deflecting a plurality of electron beams passing through 4.

The irradiation switching means 130 independently converges the plurality of electron beams and adjusts the focal point of the electron beam, and deflects the plurality of electron beams independently for each electron beam. This includes a blanking electrode array 134 for independently switching whether or not the electron beam is irradiated on the wafer 150 for each electron beam, and a plurality of openings for passing the electron beam. An electron beam shielding member for shielding the electron beam deflected by the ranking electrode array. In another example, the blanking electrode array 134 may be a blanking aperture array device. The projection system 140 for C has a third multi-axis electron lens 142 that focuses a plurality of electron beams independently and reduces the irradiation diameter of the electron beam, and an electron beam that converges the electron beams independently. A fourth multi-axis electron lens 1444 for adjusting the focus of the beam, and a deflecting unit 1446 for independently deflecting a plurality of electron beams to a desired position of the electron beam 150 for each electron beam. A fifth multi-axis electron lens 148 that functions as an objective lens for the wafer 150 and converges a plurality of electron beams independently. The deflecting unit 146 includes a plurality of deflectors. The control system 160 includes a general control unit 170 and an individual control unit 180. The individual control unit 180 includes an electron beam control unit 182, a multi-axis electron lens control unit 1884, a molding deflection control unit 1886, a blanking electrode array control unit 1888, and deflection control. It has a unit 190, a wafer stage control unit 192, and a detection signal processing unit 1994. The general control unit 170 is, for example, a workstation, and is included in the individual control unit 180. It controls each control unit. The electron beam control unit 18 controls the electron gun 11. The multi-axis electronic lens controller 18 4 is composed of the first multi-axis electron lens 116, the second multi-axis electron lens 132, the third multi-axis electron lens 144, and the fourth multi-axis electron lens 14 Controls the current supplied to the fourth and fifth multi-axis electron lenses 148.

The shaping / deflecting control unit 186 controls the first shaping / deflecting unit 118 and the second shaping / deflecting unit 120. The blanking electrode array controller 188 controls the voltage applied to the deflection electrodes included in the blanking electrode array 134. The deflection control unit 190 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 146. The wafer stage controller 192 controls the wafer stage driver 154 to move the wafer stage 152 to a predetermined position. The detection signal processing section 194 outputs the amount of electrons detected by the electron detection section 210 to the overall control section 170 as a detection signal.

FIG. 3 is a top view of the wafer stage 152. A wafer 150 and a calibration member 200 are mounted on the wafer stage 152. In this embodiment, the calibration member 200 is provided at a position on the wafer stage 152 different from the region where the wafer 150 is placed.

FIG. 4 is a cross-sectional view showing one embodiment of the calibration member 200 shown in FIG. The calibration member 200 includes a substrate 202 formed of a material such as silicon that is unlikely to emit or scatter an electron beam, and a plurality of mark portions 204. The mark portion 204 is preferably formed of a material that easily emits or scatters an electron beam, such as tantalum (T a) or tungsten (W). In the present embodiment, the marked portion 204 has an upper area 204 a to be irradiated with the electron beam, and the area of the upper area 204 a is larger than that of the lower area 204 b. The mark part 204 is preferably formed by, for example, dry etching so that the area of the upper part 204a is larger than the area of the lower part 204b. Here, the lower portion 204 b of the mark portion 204 may be a surface on the same plane as the surface of the substrate 202. The plurality of mark portions 204 are preferably arranged at intervals substantially equal to the intervals between electron beams. In the present embodiment, the plurality of mark portions 204 are provided corresponding to the positions where the plurality of electron guns 112 are provided. In this embodiment, when the electron beam scans the mark portion 204, the electron beam does not irradiate the side surface of the edge of the mark portion 204. Little detection of electrons emitted or scattered on the side of the edge. Therefore, the general control section 170 can accurately detect the position of the edge of the mark section 204. FIG. 5 is a top view of the calibration member 200 shown in FIG. The upper part 204 a of the mark part 204 has two mutually perpendicular sides c and d that protrude from the lower part 204 b at least in a direction substantially perpendicular to the electron beam irradiation direction. preferable. In the present embodiment, the upper part 204a and the lower part 204b have a rectangular shape. When there is no deviation in the irradiation position of the electron beam, the electron beam is irradiated to a specified position of the mark portion 204, which is indicated by X in the figure. The prescribed position X is preferably provided at a predetermined distance that is known from the sides c and d of each mark portion 204. The specified position X may be the center of the mark portion 204. This makes it possible to calibrate the irradiation position of the electron beam in two directions substantially perpendicular to each other using one mark portion 204.

FIG. 6 is a sectional view partially showing another embodiment of the calibration member 200 shown in FIG. The calibration member 200 has a substrate 202 and a plurality of mark portions 204 provided on the substrate 202 for detecting the irradiation position of the electron beam. The substrate 202 has a groove 206 in a region adjacent to the mark 204.

As shown in FIG. 6 (a), the groove 206 may be formed substantially in the same plane as the side surface of the edge of the mark 204, and substantially perpendicular to the surface of the substrate 202. The groove 206 may be formed by anisotropically etching the substrate 202 using the mark 204 as a mask. As shown in FIG. 6 (b), the groove 206 may be formed so as to spread downward along the electron beam irradiation direction. At this time, the groove portion 206 is preferably formed by anisotropically etching the substrate 202 using the mark portion 204 as a mask.

As shown in FIG. 6 (c), the groove portion 206 extends from a portion in contact with the mark portion 204 to another portion, and is formed in an undercut state in a portion of the mark portion 204. You can. The groove 206 is formed on the substrate 2 using the mark 204 as a mask. O2 is preferably formed by isotropic etching such as, for example, etching.

In the present embodiment, since the groove portion 206 is provided in the substrate 202, radiation and scattering of the electron beam caused by irradiating the substrate 202 with the electron beam can be reduced. The detecting section 210 hardly detects electrons emitted or scattered from the substrate 202. Therefore, the overall control unit 170 can accurately detect the position of the edge of the mark unit 204.

Further, as shown in FIG. 6 (d), also in the present embodiment, the mark portion 204 is formed on the upper portion 204 a to be irradiated with the electron beam similarly to the embodiment shown in FIGS. 4 and 5. It may be formed so that the area is larger than the area of the lower portion 204b. According to this configuration, when the electron beam scans the mark portion 204, the electron beam does not irradiate the side surface of the edge of the mark portion 204. Hardly detect the electrons emitted or scattered on the side of the edge of the. Further, since the groove portion 206 is provided in the substrate 202, radiation and scattering of the electron beam generated by irradiating the substrate 202 with the electron beam can be reduced. Hardly detects electrons emitted or scattered from the substrate 202. Therefore, the overall control unit 170 can more accurately detect the position of the edge of the mark unit 204.

FIG. 7 is a top view of the calibration member 200 according to one embodiment of the present invention. In the present embodiment, the calibration member 200 is provided in a region of the wafer stage 152 where the wafer is mounted. The calibration member 200 is formed on a substrate such as silicon, for example, and has a plurality of mark portions 204 as in the configuration shown in FIGS. 4 to 6.

In the present embodiment, since the calibration member 200 is placed in the region of the wafer stage 152 on which the wafer 150 is placed, all the electron beams generated by the electron beam exposure apparatus 100 are The irradiation position can be calibrated at the same time. Therefore, multiple electron beams can be calibrated quickly.

The operation of the electron beam exposure apparatus 100 according to the present embodiment will be described with reference to FIGS. First, the electronic beam of the electron beam exposure apparatus 100 was The operation of the electron beam exposure apparatus 100 in the correction process for correcting the irradiation position of the system will be described. It is preferable that the wafer stage controller 192 moves the wafer stage 152 to a position where each of the plurality of electron beams irradiates the mark portion 204 of the calibration member 200. At this time, the electron beam is applied to the mark section 204, and the mark section 204 emits or scatters the irradiated electrons, so that the electron detection section 210 detects the electrons. The general control section 170 controls the scanning start means to start the scanning of the electron beam to the mark section 204. The scanning start means of the overall control unit 170 deflects the electron beam in the direction of the side c or d from the scan start position, and scans the electron beam from the scan start position until it passes the side c or d. While the mark section 204 is irradiated with the electron beam, the mark section 204 emits or scatters electrons, so the electron detection section 210 detects electrons. When the electron beam passes through the side c or the side d, the electron beam irradiates the substrate 202, and the substrate 202 hardly emits or scatters electrons. No longer detected. The detection signal processing section 194 outputs the amount of electrons detected by the electron detection section 210 to the general control section 170 as a detection signal. Since the overall control unit 170 can detect the timing at which the electron beam passes through the side c or the side d, the deflection unit 1 4 6 required for the electron beam to pass from the scanning start position to the side c or the side d. The amount of deflection of the deflector at can be detected. Based on the deflection amount of the deflector required for the electron beam to pass through the side c or the side d from the electron beam running start position, the general control unit 170 determines the specified position X in FIG. A deviation from the start position can be detected. Therefore, the overall control unit 170 can detect the irradiation position of the electron beam in the direction of the side c or the side d. It is preferable that the overall control unit 170 calculates a correction value for correcting the irradiation position of the electron beam based on the detected irradiation position of the electron beam.

In another example, the wafer stage control unit 192 may be configured such that each of the plurality of electron beams is provided in a predetermined area where the mark portion 204 of the substrate 202 of the calibration member 200 is not provided. The wafer stage 152 may be moved to a position where the wafer is irradiated. At this time, the electron beam is applied to the substrate 202, and the electrons are not emitted or scattered. Therefore, the electron detection unit 210 does not detect the electrons. After that, the general control unit 170 controls the scanning start means to supply power. The sub-beam may be caused to travel from the scanning start position on the substrate 202 to pass through the edge of the mark portion 204.

In the present embodiment, the electron beam does not irradiate the side surface of the edge of the mark portion 204 when the electron beam travels through the mark portion 204. Little detection of electrons emitted or scattered on the side of the edge of 4. Therefore, the general control unit 100 can accurately detect the position of the edge of the mark portion 204. In the present embodiment, since the groove portion 206 is provided in the substrate 202, the electron beam Since the emission and scattering of the electron beam generated by irradiating 202 can be reduced, the electron detecting section 210 hardly detects the electrons emitted or scattered from the substrate 202. Therefore, the overall control unit 170 can accurately detect the position of the edge of the mark unit 204.

Furthermore, in the present embodiment, since there are a plurality of mark portions 204, the irradiation positions of a plurality of electron beams can be calibrated simultaneously. Therefore, multiple electron beams can be calibrated quickly.

With the above operation, the electron beam irradiation position is corrected based on the electron beam irradiation position, and then exposure processing is performed on the substrate 150. Hereinafter, the operation of the electron beam exposure apparatus 100 in the exposure process will be described. In the above-described correction process, the operation of irradiating the calibration member 200 with the electron beam is performed by the electron beam on the wafer 150 in the exposure process. The operation may be substantially the same as the operation of irradiating.

Next, an operation in which the electron beam exposure apparatus 100 exposes a desired pattern to the wafer 150 will be described with reference to FIG. Multiple electron guns 1 1 2 generate multiple electron beams. In the electron beam forming means 110, the generated electron beam is applied to the first forming member 114 to be formed. In another example, a plurality of electron beams may be generated by further including a unit for dividing the electron beam generated in the electron gun 112 into a plurality of electron beams.

The first multi-axis electron lens 1 16 independently focuses multiple electron beams shaped into a rectangle Then, the focus adjustment of the electron beam with respect to the second molding member 122 is performed independently for each electron beam. The first shaping deflection unit 118 deflects a plurality of rectangularly shaped electron beams to a desired position with respect to the second shaping member independently for each electron beam. The second shaping deflection unit 120 deflects the plurality of electron beams deflected by the first shaping deflection unit 118 in a direction substantially perpendicular to the second shaping member 122 independently for each electron beam. . The second molding member 122 including a plurality of openings having a rectangular shape is preferably configured such that a plurality of electron beams having a rectangular cross-sectional shape applied to each of the openings is irradiated onto the wafer 150. It is further shaped into an electron beam having a rectangular cross-sectional shape.

The second multi-axis electron lens 132 independently converges the plurality of electron beams, and independently adjusts the focus of the electron beam with respect to the blanking electrode array 134 for each electron beam. The electron beam focused by the second multi-axis electron lens 13 2 passes through a plurality of apertures included in the blanking electrode array 1 34.

The blanking electrode array control unit 188 controls whether or not to apply a voltage to a deflection electrode formed in the blanking electrode array 134 and provided near each aperture. The blanking electrode array 134 switches whether or not to irradiate the wafer 150 with the electron beam based on the voltage applied to the deflection electrode.

The electron beam that is not deflected by the blanking electrode array 134 has its electron beam diameter reduced by the third multi-axis electron lens 142 and passes through an opening included in the electron beam shielding member 136. Fourth multi-axis electron lens 1 4 4 force Converges multiple electron beams independently, adjusts the focus of the electron beam with respect to the deflection unit 1 46 independently for each electron beam, and adjusts the focus of the electron beam. The light enters the deflector included in the deflecting unit 146.

The overall control unit 170 controls the deflection control unit 190 to correct the irradiation position of the electron beam based on the correction value calculated in the correction processing. The deflection control unit 190 controls the deflection unit 146 based on an instruction from the general control unit 170 to deflect each electron beam, thereby correcting the irradiation position of the electron beam. I do.

The deflection control unit 190 controls the plurality of deflectors included in the deflection unit 146 independently. The deflecting unit 146 deflects the plurality of electron beams incident on the plurality of deflectors to a desired exposure position on the wafer 150 independently for each electron beam. The plurality of electron beams passing through the deflecting unit 146 are adjusted in focus with respect to the wafer 150 by the fifth multi-axis electron lens 148, and are irradiated on the wafer 150.

During the exposure process, the wafer stage controller 192 moves the wafer stage 152 in a fixed direction. The blanking electrode array control unit 188 determines apertures through which the electron beam passes based on the exposure pattern data, and performs power control for each aperture. The aperture through which the electron beam passes is appropriately changed in accordance with the movement of the wafer 150, and the electron beam is deflected by the deflecting unit 146, thereby exposing the wafer 150 to a desired circuit pattern. It becomes possible.

As described above, the present invention has been described using the embodiment, but the technical scope of the present invention is not limited to the scope described in the above embodiment. It is obvious to those skilled in the art that various changes or improvements can be added to the above-described embodiment. It is apparent from the description of the claims that embodiments with such changes or improvements can be included in the technical scope of the present invention. Industrial applicability

As is clear from the above description, according to the present invention, the irradiation position of the electron beam can be appropriately calibrated.

Claims

The scope of the claims

1. An electron beam exposure apparatus for exposing a pattern on a wafer by an electron beam, wherein:

A mark portion provided on the stage for detecting an irradiation position of the electron beam;

,

The electron beam exposure apparatus, wherein the mark portion has an upper area irradiated with the electron beam larger than a lower area.

2. The electron beam exposure apparatus according to claim 1, wherein the upper portion has two mutually perpendicular sides projecting from the lower portion in a direction substantially perpendicular to the irradiation direction of the electron beam. . .

3. A plurality of electron beam generators each generating the electron beam,

A plurality of the mark portions corresponding to the plurality of the electron beam generators;

3. The electron beam exposure apparatus according to claim 1, further comprising:

4. An electron beam exposure apparatus that exposes a pattern on a wafer with an electron beam, the wafer stage on which the wafer is mounted,

A substrate installed on the wafer stage,

A mark portion provided on the substrate, for detecting an irradiation position of the electron beam,

An electron beam exposure apparatus, wherein the substrate has a groove in a region adjacent to the mark.

5. The electron beam exposure apparatus according to claim 4, wherein the groove is formed so as to extend downward along the irradiation direction of the electron beam.

6. The groove is formed by etching the substrate using the mark as a mask. 6. The electron beam exposure apparatus according to claim 4, wherein the electron beam exposure apparatus is formed by:

7. a plurality of electron beam generators for respectively generating the electron beams;

The electron beam exposure device according to any one of claims 4 to 6, further comprising:

8. A calibration member for calibrating an irradiation position of an electron beam in an electron beam exposure apparatus,

Board and

The mark member is characterized in that an upper area irradiated with the electron beam has a larger area than a lower area.

9. The calibration member according to claim 8, wherein the upper portion has two mutually perpendicular sides projecting from the lower portion in a direction substantially perpendicular to the irradiation direction of the electron beam.

10. The calibration member according to claim 8, further comprising a plurality of the mark portions arranged corresponding to a distance between the electron beams.

1 1. A calibration member for calibrating the irradiation position of the electron beam in the electron beam exposure apparatus,

Board and

The calibration member, wherein the substrate has a groove in a region adjacent to the mark.

12. The calibration member according to claim 10, wherein the groove is formed by etching the substrate using the mark as a mask.

13. The plurality of mark portions arranged corresponding to the intervals between the electron beams are further added. 13. The calibration member according to claim 11, wherein the calibration member is provided.

14. A method of manufacturing a calibration member for calibrating an irradiation position of an electron beam in an electron beam exposure apparatus,

Forming a mark portion for detecting the irradiation position of the electron beam on the substrate; and etching the substrate using the mark portion as a mask to form a groove portion. Production method.

15. The method according to claim 14, wherein the step of forming the groove includes the step of providing the groove in a region of the substrate adjacent to the mark.