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WO2002045113A1 - Procede de formation de motif destine a un nanotube de carbone, cathode froide a emission de champ, et procede de fabrication de cette cathode - Google Patents

Procede de formation de motif destine a un nanotube de carbone, cathode froide a emission de champ, et procede de fabrication de cette cathode Download PDF

Info

Publication number
WO2002045113A1
WO2002045113A1 PCT/JP2001/010276 JP0110276W WO0245113A1 WO 2002045113 A1 WO2002045113 A1 WO 2002045113A1 JP 0110276 W JP0110276 W JP 0110276W WO 0245113 A1 WO0245113 A1 WO 0245113A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotube
cold cathode
pattern
pattern forming
etching
Prior art date
Application number
PCT/JP2001/010276
Other languages
English (en)
Japanese (ja)
Inventor
Fuminori Ito
Yuko Okada
Yoshinori Tomihari
Kazuo Konuma
Akihiko Okamoto
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000362395A external-priority patent/JP4802363B2/ja
Priority claimed from JP2001337441A external-priority patent/JP3843447B2/ja
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US10/433,382 priority Critical patent/US20040043219A1/en
Priority to KR10-2003-7007245A priority patent/KR20030059291A/ko
Publication of WO2002045113A1 publication Critical patent/WO2002045113A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

L'invention concerne un procédé de formation de motif, destiné à un nanotube de carbone (106) et permettant de former un motif, par gravure humide d'un nanotube de carbone (106), au moyen d'un processus de transfert, ce procédé comprenant les étapes suivantes consistant à utiliser une solution dissolvant un liant utilisé pour le processus de transfert, en tant que solution utilisée pour la gravure humide, et, pendant cette gravure, à frotter le nanotube de carbone enroulé (106) à l'aide d'une matière du type chiffon (112). L'invention concerne également un procédé de formation de motif destiné à un nanotube de carbone (106) et permettant de former un motif au moyen d'un processus de gravure à sec, ce procédé comprenant l'étape consistant à utiliser, en tant que masque, un film métallique ou un film d'une certaine substance, non endommagé au moment de la gravure sèche et qui n'endommage pas le nanotube (106) au moment de son enlèvement, de sorte qu'il est possible de former un motif fin de nanotube de carbone doté d'une excellente planéité.
PCT/JP2001/010276 2000-11-29 2001-11-26 Procede de formation de motif destine a un nanotube de carbone, cathode froide a emission de champ, et procede de fabrication de cette cathode WO2002045113A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/433,382 US20040043219A1 (en) 2000-11-29 2001-11-26 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode
KR10-2003-7007245A KR20030059291A (ko) 2000-11-29 2001-11-26 카본 나노튜브의 패턴 형성 방법 및 전계 방출형 냉음극과그 제조 방법

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000362395A JP4802363B2 (ja) 2000-11-29 2000-11-29 電界放出型冷陰極及び平面画像表示装置
JP2000-362395 2000-11-29
JP2000367341 2000-12-01
JP2000-367341 2000-12-01
JP2001337441A JP3843447B2 (ja) 2000-12-01 2001-11-02 カーボンナノチューブのパターン形成方法
JP2001-337441 2001-11-02

Publications (1)

Publication Number Publication Date
WO2002045113A1 true WO2002045113A1 (fr) 2002-06-06

Family

ID=27345293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/010276 WO2002045113A1 (fr) 2000-11-29 2001-11-26 Procede de formation de motif destine a un nanotube de carbone, cathode froide a emission de champ, et procede de fabrication de cette cathode

Country Status (2)

Country Link
KR (1) KR20030059291A (fr)
WO (1) WO2002045113A1 (fr)

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027226A1 (fr) 2003-09-12 2005-03-24 Sony Corporation Procede fabrication de dispositif a semiconducteur a effet de champ
US7385266B2 (en) 2003-05-14 2008-06-10 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
WO2009023304A2 (fr) * 2007-05-02 2009-02-19 Atomate Corporation Dispositifs à nanotubes de haute densité
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7619291B2 (en) 2001-07-25 2009-11-17 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7719067B2 (en) 2001-07-25 2010-05-18 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7859385B2 (en) 2004-09-21 2010-12-28 Nantero, Inc. Resistive elements using carbon nanotubes
US7927992B2 (en) 2005-09-06 2011-04-19 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8044388B2 (en) 2001-07-25 2011-10-25 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
US8115187B2 (en) 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8525143B2 (en) 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8562937B2 (en) 2005-12-19 2013-10-22 Nantero Inc. Production of carbon nanotubes
US8586424B2 (en) 2008-11-19 2013-11-19 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8587989B2 (en) 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US8631562B2 (en) 2004-11-02 2014-01-21 Nantero Inc. Methods of making nanotube switches
US8771628B2 (en) 2004-12-16 2014-07-08 Nantero Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
US9617151B2 (en) 2010-02-12 2017-04-11 Nantero Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US10096363B2 (en) 2001-07-25 2018-10-09 Nantero, Inc. Methods of forming nanotube films and articles
US10654718B2 (en) 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics

Families Citing this family (2)

* Cited by examiner, † Cited by third party
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KR100816815B1 (ko) * 2007-02-09 2008-03-26 주식회사 나모텍 탄소나노튜브를 이용한 표시장치용 기판과 그의 제조방법
KR100924766B1 (ko) * 2007-06-22 2009-11-05 삼성전자주식회사 금속 나노입자를 포함하는 탄소 나노튜브(ｃｎｔ) 박막 및그 제조방법

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WO1999028939A1 (fr) * 1997-12-04 1999-06-10 Printable Field Emitters Limited Materiaux a emission electronique par effet de champ et dispositifs correspondants
JP2000277002A (ja) * 1999-03-25 2000-10-06 Matsushita Electric Ind Co Ltd 電子放出素子の製造方法
JP2000285795A (ja) * 1999-03-31 2000-10-13 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
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EP1096533A1 (fr) * 1999-08-18 2001-05-02 Lucent Technologies Inc. Procédé de fabrication d'une couche structurée de nano-tubes en carbone

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US8058089B2 (en) 2001-07-25 2011-11-15 Nantero Inc. Electromechanical memory array using nanotube ribbons and method for making same
US8044388B2 (en) 2001-07-25 2011-10-25 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US10096363B2 (en) 2001-07-25 2018-10-09 Nantero, Inc. Methods of forming nanotube films and articles
US8400053B2 (en) 2001-07-25 2013-03-19 Nantero Inc. Carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7719067B2 (en) 2001-07-25 2010-05-18 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7619291B2 (en) 2001-07-25 2009-11-17 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
US10124367B2 (en) 2003-01-13 2018-11-13 Nantero, Inc. Methods for arranging nanoscopic elements within networks, fabrics and films
US8357559B2 (en) 2003-05-14 2013-01-22 Nantero Inc. Method of making sensor platform using a non-horizontally oriented nanotube element
US7538400B2 (en) 2003-05-14 2009-05-26 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7385266B2 (en) 2003-05-14 2008-06-10 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7948082B2 (en) 2003-09-08 2011-05-24 Nantero, Inc. Method of fabricating a patterned nanoscopic article
EP1667238A4 (fr) * 2003-09-12 2009-09-16 Sony Corp Procede fabrication de dispositif a semiconducteur a effet de champ
WO2005027226A1 (fr) 2003-09-12 2005-03-24 Sony Corporation Procede fabrication de dispositif a semiconducteur a effet de champ
EP1667238A1 (fr) * 2003-09-12 2006-06-07 Sony Corporation Procede fabrication de dispositif a semiconducteur a effet de champ
US7859385B2 (en) 2004-09-21 2010-12-28 Nantero, Inc. Resistive elements using carbon nanotubes
US8631562B2 (en) 2004-11-02 2014-01-21 Nantero Inc. Methods of making nanotube switches
US8771628B2 (en) 2004-12-16 2014-07-08 Nantero Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9767902B2 (en) 2005-05-09 2017-09-19 Nantero, Inc. Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9406349B2 (en) 2005-05-09 2016-08-02 Nantero Inc. Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks
US10339982B2 (en) 2005-05-09 2019-07-02 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US8630091B2 (en) 2005-09-06 2014-01-14 Nantero Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8525143B2 (en) 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US7927992B2 (en) 2005-09-06 2011-04-19 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8562937B2 (en) 2005-12-19 2013-10-22 Nantero Inc. Production of carbon nanotubes
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
WO2009023304A2 (fr) * 2007-05-02 2009-02-19 Atomate Corporation Dispositifs à nanotubes de haute densité
WO2009023304A3 (fr) * 2007-05-02 2009-07-09 Atomate Corp Dispositifs à nanotubes de haute densité
US8115187B2 (en) 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8587989B2 (en) 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US8969142B2 (en) 2008-11-19 2015-03-03 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same
US10181569B2 (en) 2008-11-19 2019-01-15 Nantero, Inc. Two-terminal switching devices comprising coated nanotube elements
US9337423B2 (en) 2008-11-19 2016-05-10 Nantero Inc. Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubes
US9755170B2 (en) 2008-11-19 2017-09-05 Nantero, Inc. Resistive materials comprising mixed nanoscopic particles and carbon nanotubes
US8586424B2 (en) 2008-11-19 2013-11-19 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US9502675B2 (en) 2009-10-23 2016-11-22 Nantero Inc. Methods for passivating a carbonic nanolayer
US9281185B2 (en) 2009-10-23 2016-03-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US10084138B2 (en) 2009-10-23 2018-09-25 Nantero, Inc. Methods for forming nanotube fabric layers with increased density
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US9617151B2 (en) 2010-02-12 2017-04-11 Nantero Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US10773960B2 (en) 2010-02-12 2020-09-15 Nantero, Inc. Low porosity nanotube fabric articles
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US10654718B2 (en) 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
US9715927B2 (en) 2015-01-22 2017-07-25 Nantero, Inc. 1-R resistive change element arrays using resistive reference elements
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements

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