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WO2001069654A3 - Semiconductor device with light shield and corresponding etching method - Google Patents

Semiconductor device with light shield and corresponding etching method Download PDF

Info

Publication number
WO2001069654A3
WO2001069654A3 PCT/EP2001/002426 EP0102426W WO0169654A3 WO 2001069654 A3 WO2001069654 A3 WO 2001069654A3 EP 0102426 W EP0102426 W EP 0102426W WO 0169654 A3 WO0169654 A3 WO 0169654A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
etching method
light shield
corresponding etching
film
Prior art date
Application number
PCT/EP2001/002426
Other languages
French (fr)
Other versions
WO2001069654A2 (en
Inventor
Yoshihisa Hatta
Original Assignee
Koninkl Philips Electronics Nv
Yoshihisa Hatta
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Yoshihisa Hatta filed Critical Koninkl Philips Electronics Nv
Publication of WO2001069654A2 publication Critical patent/WO2001069654A2/en
Publication of WO2001069654A3 publication Critical patent/WO2001069654A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A semiconductor device and a display device comprising a gate electrode, an amorphous silicon film or a polysilicon film formed under the gate electrode, and a light shielding film formed under the amorphous silicon film or the polysilicon film, the light shielding film having titanium nitride.
PCT/EP2001/002426 2000-03-13 2001-03-05 Semiconductor device with light shield and corresponding etching method WO2001069654A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-69195 2000-03-13
JP2000069195A JP2001274138A (en) 2000-03-13 2000-03-13 Semiconductor device and etching method

Publications (2)

Publication Number Publication Date
WO2001069654A2 WO2001069654A2 (en) 2001-09-20
WO2001069654A3 true WO2001069654A3 (en) 2002-01-10

Family

ID=18588128

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/002426 WO2001069654A2 (en) 2000-03-13 2001-03-05 Semiconductor device with light shield and corresponding etching method

Country Status (2)

Country Link
JP (1) JP2001274138A (en)
WO (1) WO2001069654A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0312986A1 (en) * 1987-10-22 1989-04-26 Siemens Aktiengesellschaft Etchback process for tungsten-filled integrated-circuit contact holes, with a titanium nitride underlayer
US4895613A (en) * 1988-06-16 1990-01-23 Kenneth Carrico Film linear stripper
EP0849377A2 (en) * 1996-12-19 1998-06-24 Texas Instruments Incorporated Etching titanium nitride in a plasma containing oxygen and flourine
US5886364A (en) * 1993-06-24 1999-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0312986A1 (en) * 1987-10-22 1989-04-26 Siemens Aktiengesellschaft Etchback process for tungsten-filled integrated-circuit contact holes, with a titanium nitride underlayer
US4895613A (en) * 1988-06-16 1990-01-23 Kenneth Carrico Film linear stripper
US5886364A (en) * 1993-06-24 1999-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
EP0849377A2 (en) * 1996-12-19 1998-06-24 Texas Instruments Incorporated Etching titanium nitride in a plasma containing oxygen and flourine
US5948702A (en) * 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy

Also Published As

Publication number Publication date
WO2001069654A2 (en) 2001-09-20
JP2001274138A (en) 2001-10-05

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