WO1999004417A1

WO1999004417A1 - Position sensing method and position sensor

Info

Publication number: WO1999004417A1
Application number: PCT/JP1998/003133
Authority: WO
Inventors: Yoshiki Kida
Original assignee: Nikon Corporation
Priority date: 1997-07-14
Filing date: 1998-07-14
Publication date: 1999-01-28
Also published as: AU8129398A

Abstract

A position sensing mark is provided on an object whose position is to be measured. The position sensing mark comprises a predetermined reference point and a plurality of mark elements including information on positions relative to the reference point. At least one mark element is detected by a detector and, in accordance with the detected mark element, the relative position of the detection origin of the detector relative to the reference point is found and, in accordance with the relative position, the position of the object relative to the detection origin of the detector is found.

Description

Description Position detection method and position detection device This application is based on Japanese Patent Application No. 2005-28080 (filed on July 14, 1997), the contents of which are hereby incorporated by reference. Be incorporated. Technical field

The present invention relates to a position detection method of a position detection member, a position detection device, and a position detection member thereof in positioning a mask or the like of a semiconductor exposure apparatus. Background art

A semiconductor exposure apparatus is used to transfer a pattern formed on a mask onto a photosensitive substrate such as a semiconductor wafer or a glass plate coated with a photosensitive agent such as a photo resist. In a semiconductor exposure apparatus, it is necessary to align (align) a mask and a substrate with relatively high precision. This alignment is performed, for example, as follows.

Mask alignment marks are formed on both sides of the peripheral edge of the mask, the mask is placed on a mask stage, and the positions of both mask alignment marks are detected by a pair of mask alignment microscopes. Since the positional relationship between the optical axes of both mask alignment microscopes and the optical axis of the projection optical system is known in advance, the relative positional relationship between the mask and the projection optical system must be known by the detection operation of this alignment microscope. Can be. This detection operation is generally called mask alignment.

The mask stage is driven based on the results of the mask alignment so that the center position of the mask coincides with the optical axis of the projection optical system. Next, the mask alignment marks and the fiducial marks on the substrate stage are placed in the field of view of the mask alignment microscope, and the coordinates on the mask and the coordinates of the substrate stage are correlated (fine). Alignment).

Next, for example, a fiducial By detecting the mark, that is, performing baseline measurement, the coordinates of the substrate stage and the coordinates on the substrate are correlated. As a result, the correspondence between the coordinates on the mask, the coordinates of the substrate stage, and the coordinates on the substrate can all be known, so that the substrate is driven relative to the mask by driving the substrate stage based on the baseline measurement results. Alignment can be performed with high precision.

The mask alignment microscope is generally not designed with a low magnification so that the entire mask can be observed at one time, but with a high magnification that can partially observe the mask for the purpose of improving accuracy. Therefore, the field of view of the mask alignment microscope on the mask is narrower than that of the mask. For this reason, after the mask is transferred to the mask stage via the transfer system, even if the alignment mark is observed with the mask alignment microscope, the center of the alignment mark may not be in the field of view of the mask alignment microscope. Many.

For this reason, the shape of the conventional alignment mark is devised so that the mask alignment mark of the mask 101 immediately after transport always falls within the field of view 102 of the mask alignment microscope, as shown in Fig. 11. For example, in the case of a cross-shaped mark, the mark is formed to have a sufficiently long X line 103 and y line 104 in the x and y two-dimensional directions from the center of the mark. As a result, the search alignment of the mask marks 103 and 104 formed on the mask 101 described later was performed efficiently. PA in FIG. 11 is a pattern area where a circuit pattern is drawn.

The alignment of the alignment mark center to the detection origin of the alignment microscope (almost the center of the visual field) is performed. Reticle Alignment) There is a thing by a microscope.

In search measurement using an SRA microscope, light emitted from a fiducial mark on a substrate stage illuminates a mask alignment mark formed on a mask through a projection optical system. Then, by scanning the mask in the X direction and measuring the peak position of the amount of light when the mask alignment mark crosses the y line 104, the X coordinate of the center of the mask alignment mark is measured. The mask is scanned in the y direction and the X-line 103 of the mask alignment mark is The y-coordinate is measured by measuring the peak position of the light quantity at the time of cutting, and thus the X and y coordinates of the center of the mask alignment mark are detected. This approach is disclosed in detail in USPN No. 4,794,426.

Search measurement using a VRA microscope detects the center position of a mask alignment mark based on an image signal. In this case, measurement is performed by screen joining as follows. That is, an image signal is acquired by a VRA microscope at a provisional position where the mask is placed on the mask stage, and then, for example, in the direction of 45 ° with respect to the X-axis and the y-axis, and the same as the previous image. The image signal is acquired by moving the mask by the distance where the images overlap. By repeating this, the screen crosses the X line 103 and the y line 104 several times, so that the X and y coordinates of the center of the mask alignment mark can be changed. It is to detect. Disclosure of the invention

As the capability of semiconductor exposure equipment, importance is placed on the number of substrates that can be processed per unit time (throughput), as well as the overlay accuracy of the circuit pattern on the mask and the pattern on the substrate. Mask alignment is not frequent in the operation of exposure equipment, but it is important to reduce the mask alignment processing time from the viewpoint of reducing the lot transfer time.

However, the conventional mask alignment method has a problem that the time required for search measurement is long. That is, in the search measurement using the SRA microscope, the step of scanning the mask in the X direction and the step of scanning the mask in the y direction are indispensable. In the search measurement using a VRA microscope, the mask scanning direction is only one direction that intersects both the X direction and the y direction, but it is necessary to perform multiple screen joint measurement.

An object of the present invention is to provide a position at which a reference position of a mark formed on a positioning target can be obtained without substantially scanning a positioning target such as a mask and without performing a plurality of screen joining operations. An object of the present invention is to provide a detection method, a position detection device, a position detection member, a semiconductor exposure device, and the like.

The present invention makes effective use of the first to fourth quadrants defined on the X and y lines of the conventional mask alignment mark, and draws marks in these quadrants as appropriate. Thus, the above object is achieved.

That is, the position detection method of the present invention detects the position of the position detection member on which the position detection mark is formed. Then, a plurality of mark elements including a predetermined reference point and position information from the reference point are formed on the position detection mark, and at least one of the mark elements formed on the position detection mark is detected by the detector. Then, based on the detected mark element, the relative position between the reference point and the detection origin of the detector is obtained, and based on the obtained relative position, the position of the position detection member with respect to the detection origin of the detector is detected. I do. In this case, it is preferable that each of the plurality of mark elements is a different figure. Further, the figure preferably includes parallel lines, and the relative position is obtained from the interval between the parallel lines.

Further, the graphic preferably includes a rectangular graphic, and the relative position is obtained from the size of the rectangular shape.

The figure preferably includes a double rectangle, and the relative position is obtained from the position of the inner rectangle in the outer rectangle of the double rectangle.

Preferably, the reference point is the center point of the position detection mark.

Note that the position detection member is a mask used in a semiconductor exposure apparatus, and a position detection mark may be formed on the mask.

The position detection device of the present invention detects the position of the position detection member. The position detection member has a position detection mark including a predetermined reference point and a plurality of mark elements including position information from the reference point. The position detection device includes a detector that detects at least one of the mark elements, and a calculator that calculates the relative position between the reference point and the detection origin of the detector based on the detection result of the detector. Including.

The position detection member of the present invention is a member whose position is detected by a position detection device, and has a position detection mark formed at a predetermined position, and the position detection mark has a predetermined reference. It includes a plurality of mark elements including points and position information from the reference point, and the mark elements are arranged so that at least one of them is detected by a detector of the position detection device.

As described above, according to the present invention, even though only one mark element (figure, section) of the entire mark is actually observed by the mark detector, It is possible to know the positional relationship of elements (graphics, sections) in the entire mark. On the other hand, since the positional relationship of the observed mark element with respect to the mark detector can be determined by observing the mark element, the positional relationship of the reference position of the mark with respect to the mark detector is immediately determined without scanning the entire mark. You can know. Therefore, the processing time for aligning the mark detector with the reference position of the mark can be greatly reduced.

Here, the position detection member does not necessarily have to be movably disposed. However, when attempting to position a specific position of the mark with respect to the mark detector, the stage is moved so that the position detection member moves in the direction in which the mark extends one-dimensionally or two-dimensionally. Is provided, and the position detection member is mounted on this stage.

At this time, assuming that the size of each mark element is just within the field of view of the mark detector, it is necessary to slightly drive the stage to actually put the entire mark element in the field of view of the mark detector. Occurs. Similarly, even if the size of each mark element is sufficiently small, if the arrangement is sparse, it is necessary to slightly drive the stage in order to bring the actual mark element into the field of view of the mark detector. Therefore, it is preferable that the size and arrangement of each mark element is determined so that at least one mark element is within the field of view of the mark detector without driving the stage.

In order to know the positional relationship of the mark element in the entire mark from one mark element detected by the mark detector, it is necessary to form all of the mark elements so as to be non-identical to each other. Here, the two-dimensional positioning of the position detection member may be performed by performing one-dimensional positioning in two directions orthogonal to each other. Therefore, in the case where one-dimensional positioning, for example, positioning only in the horizontal direction is to be performed, a method of forming the mark elements non-identical to each other will be described.

As one method, each mark element can be given a unique distance or distance (distance that takes only positive values). For example, by arranging one vertical line for each mark element and changing the thickness of the vertical line for each mark element, each mark element can be identified. However, it is more preferable to arrange two vertical lines for each mark element and to change the interval between the two vertical lines for each mark element. Alternatively, each mark element can be given a unique set of two intervals. In this case, as a set of two intervals, when the order of the two intervals is different, it is naturally preferable to identify as another set. Similarly, each mark element can be identified by giving each mark element a unique set of three intervals. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a sectional view showing an example of the exposure apparatus.

FIG. 2 is a schematic plan view showing an example of the mask.

FIG. 3 is a schematic plan view showing a mask alignment mark according to the first embodiment of the present invention.

FIG. 4 is a schematic plan view showing a mask alignment mark according to Modification Example 1 of the present invention.

FIG. 5 is a schematic plan view showing a mask alignment mark according to Modification 2 of the present invention.

FIG. 6 is a schematic plan view showing a mask alignment mark according to Modification 3 of the present invention.

FIG. 7 is a schematic plan view showing a mask alignment mark according to Modification 4 of the present invention.

FIG. 8 is a configuration diagram of the positioning device of the present invention.

FIG. 9 is a flowchart showing the control for obtaining the amount of displacement in the X direction between the microscope coordinate origin and the reference vertical line 4S of the mask.

FIG. 10 is a flowchart showing the control for positioning the mask.

FIG. 11 is a schematic plan view showing a conventional mask.

FIG. 12 is a cross-sectional view of an exposure apparatus for explaining a fine alignment. BEST MODE FOR CARRYING OUT THE INVENTION

An embodiment of the present invention will be described with reference to the drawings. In the following embodiments, the present invention is applied to a technique for positioning a mask 1 of a semiconductor exposure apparatus. First, Figure 1 shows the dew 2 shows an optical device, in which a mask 1 is placed on a mask stage 10, a circuit pattern 11 is drawn on the mask 1 as shown in FIG. A pair of mask alignment marks 2 are drawn. The circuit pattern 11 drawn on the mask 1 is illuminated by the illumination optical system 12, and an image thereof is formed on the substrate 14 by the projection optical system 13. The substrate 14 is placed on a substrate stage 15, and a fiducial mark plate 16 on which a fiducial mark is drawn at the same height as the substrate 14 is placed on the substrate stage 15. A mask alignment microscope 17 is arranged so as to be opposed to the mask alignment mark 2 drawn on the mask 1. The mask alignment microscope 17 is provided with a two-dimensional CCD sensor (not shown), and performs image processing on an image captured by the two-dimensional CCD sensor. On the other hand, on the side of the projection optical system 13, an office alignment optical system 18 is arranged so as to face the substrate 14 or the fiducial mark plate 16.

The mask stage 10 is formed so as to move the mask 1 in the plane direction, that is, the x_y plane direction. The position of the mask stage 10 in the X direction with respect to the projection optical system 13 is the X position detection interference. The position in the y direction is measured by the interferometer 19 Y for detecting the Y position (Fig. 8), and the rotation angle in the X-y plane is determined by interferometers 19 X and Y for the X position. It is measured by the interferometer for position detection 19 Y. The substrate stage 15 is formed so as to move the substrate 14 in the X--y plane and the z direction orthogonal thereto, and the position of the substrate stage 15 in the X direction with respect to the projection optical system 13 is provided. And the y-direction position and the rotation angle in the X-y plane are also measured by multiple interferometers (not shown) arranged in the same way as the mask stage position interferometers 19 X and 19 Y The position in the z direction is measured by an oblique incidence optical system (not shown).

Figure 3 shows the mask alignment mark on an enlarged scale. However, since the left and right mask alignment marks have the same mark shape or symmetric shape, only one of them is shown. The mask alignment mark 2 of this embodiment includes a plurality of vertical lines 4 and a plurality of horizontal lines 5. In this embodiment, an area defined by two adjacent vertical lines 4 and two adjacent horizontal lines 5 is one section 3. Each parcel 3 has at least one parcel 3 without moving mask 1. It is formed in a size enough to fit in the field of view of the squaring microscope 17. Hereinafter, since there is no difference in principle between the horizontal direction and the vertical direction, only the horizontal direction, that is, the X direction will be described.

A vertical line 4 S on the left side of one section 3 and a horizontal line 5 S on the lower side are used as reference lines in the X and y directions of the entire mask alignment mark 2 to define an X-y coordinate system. The X coordinate of the reference vertical line 4S is x = 0, and the y coordinate of the reference horizontal line 5S is y = 0. D is the distance between the reference vertical line 4 S and the right vertical line 4. The interval between the left and right vertical lines 4 constituting each section 3 increases by d as one goes to the right section, and decreases by d as one goes to the left section.

The distance D between the left and right vertical lines 4 of one section (for example, section 3N in Fig. 3, hereinafter referred to as measurement section 3N) within the field of view of the mask alignment microscope is expressed by the following equation (1). .

D = D n d (n = 0, ± 1, ± 2, ...)... (1)

The x coordinate of the vertical line 4 on the left side of the measurement section 3N is given by the following equation (2).

x = D. Ten [D. Ten d] + [D. + 2 d] + · · · + [D. + (n-1) d] = n Do + n (n-1) d / 2... (2)

Now, when the distance D between the left and right vertical lines 4 of the measurement section 3 N in the field of view of the mask alignment microscope 17 is measured, n is obtained from the equation (1). This value of n is calculated as

By substituting into (2), the X coordinate Xc of the vertical line 4 on the left side of the measurement section 3N can be obtained.

Similarly, the y-coordinate of the lower horizontal line of the measurement section 3N can be obtained for the upper and lower horizontal lines.

Thus, the distance D between two adjacent vertical lines 4 forming one section 3 and the distance between two adjacent horizontal lines 5 are measured by a mask alignment microscope 17 to obtain a reference vertical line 4. The positional relationship of the measured section 3 N with respect to S and the reference horizontal line 5 S, that is, the x and y coordinates of the X—y coordinate system can be known.

On the other hand, relative to the coordinate system X—Y of the mask alignment microscope 17 (shown in FIG. 3; hereinafter, referred to as the microscope coordinate system X_Y), the positional relationship of the measurement section 3 mm is as follows. Can be determined by measuring with a microscope. Specifically, in Figure 3 The X coordinate X k of the vertical line on the left side of the measurement section 3 N based on the microscope coordinate system X—Y is obtained by processing the image measured with the mask alignment microscope 17. X-coordinate X k of the vertical line on the left side of measurement section 3 N with reference to system X—Y and reference vertical line 4 S, ie, the vertical line on the left side of measurement section 3 N with reference to coordinate system x_y. When the value of the X coordinate X c is obtained, the X coordinate XC of the reference vertical line 4 S based on the microscope coordinate system X—Y can be obtained from the following equation (3).

X C = X k-x c... (3)

The Y coordinate YC of the reference horizontal line 5S based on the microscope coordinate system X—Y can be calculated in the same manner.

The coordinates of the reference vertical line 4 S or the reference horizontal line 5 S with respect to the microscope coordinate system X—Y are, in other words, the position of the reference vertical line 4 S or the reference horizontal line 5 S, and the microscope coordinate system X—Y This is nothing but the amount of movement required to match the origin of the coordinate (accurately, the value obtained by inverting the sign of the coordinate value is the amount of movement). Therefore, the direction and amount of movement of the mask 1 necessary to match the intersection of the reference vertical line 4 S and the reference horizontal line 5 S with the origin (detection origin) OG of the mask alignment microscope coordinate system X—Y , You can know immediately.

However, in reality, there are one mask alignment mark on each of the left and right, and a mask alignment microscope is placed opposite each of them. Therefore, the line connecting the detection origins OG of the left and right microscopes, the intersection of the reference line 4S, 5S of the left mark (the origin of the X-y coordinate system) and the reference line 4S, 5S of the right mark Although it is possible to match the line connecting the two lines, it is not possible to match the intersection of the reference lines 4 S and 5 S with the origin of the coordinate system of each microscope for each of the left and right microscopes and the mark. Impossible. Therefore, the center position of the left and right intersections is matched with the center position of the origin of the left and right microscopes.

FIG. 8 is a configuration diagram of a positioning device that positions the mask 1 in the semiconductor exposure apparatus based on the above description. Components that are the same as those in FIG. 1 are given the same reference numerals, and components that are not shown in FIG. Reference numeral 21 denotes a control device including a microprocessor and its peripheral circuits. The control device 21 controls the positioning device and also controls the entire semiconductor exposure apparatus. Reference numeral 22 denotes a driving device that drives the mask stage 10 under the control of the control device 21. It is composed of

FIG. 9 is a flow chart showing an outline of control for obtaining a shift amount in the X direction between the microscope coordinate origin and the reference vertical line 4S of the mask in one of the mask alignment microscopes 17 of this positioning apparatus. This flowchart is executed in the control device 21 and components connected thereto.

In step S1, the image captured by the mask alignment microscope 17 is subjected to image processing, and the interval D in the X direction of one section 3 of the mask alignment mark in the image is measured. In step S2, the value of n is calculated from the measured value of D and the above equation (1). In step S3, the value of n obtained in step S2 is substituted into the above equation (2), and the value of the X coordinate of the vertical line on the left side of the measurement section 3N with respect to the reference vertical line 4S is obtained. Find xc. In step S4, the image taken by the mask alignment microscope 17 is image-processed, the position of the vertical line on the left side of section 3N in the image is determined, and the section based on the microscope coordinate system XY is determined. 3 Find the X coordinate value X k of the vertical line to the left of N. In step S5, the value of xc obtained in step S3 and the value of Xk obtained in step S4 are substituted into equation (3), and X of the reference vertical line 4S with respect to the microscope coordinate system X—Y is used. Find coordinates XC. This value of XC is the amount of displacement in the X direction between the microscope coordinate origin and the reference vertical line 4S of the mask.

The displacement Y C in the Y direction can be obtained in the same manner. Furthermore, the amount of deviation between the microscope coordinate origin and the reference origin of the mask in the other mask alignment microscope, that is, the amount of deviation in the X and Y directions can be obtained in the same way. Detailed contents are omitted.

FIG. 10 is a flowchart showing control for positioning the mask based on values measured by the left and right mask alignment microscopes. In step S11, the left mask alignment microscope 17 obtains a shift amount between the microscope coordinate origin and the reference origin of the mask alignment mark, that is, a shift amount XC1 in the X direction and a shift amount YC1 in the Y direction. In step S12, the right mask alignment microscope 17 obtains a shift amount between the microscope coordinate origin and the reference origin of the mask alignment mark, that is, a shift amount XC2 in the X direction and a shift amount YC2 in the Y direction. Step SI 1 and step S 12 are based on the control flowchart of FIG. In step S13, based on the displacement amounts XC1YC1, XC2, and YC2 obtained in steps S11 and S12, a line connecting the detection origins of the left and right microscopes and a reference line of the left mark. The line connecting the intersection of 4S and 5S with the reference line of the right mark 4S and 5S is matched, and the center position between the origins of the left and right microscopes and the reference line of the left and right marks 4 The mask stage 10 is driven via the driving device 22 so as to match the center position between the intersections of S and 5S. The mask stage 10 is driven while measuring the position of the mask stage 10 with the interferometers 19X and 19Y. As a result, the detection origin of the mask alignment microscope and the reference origin of the mask alignment mark come into agreement.

As described above, when the so-called search alignment (search measurement and movement of the mask based on the search measurement result) of the mask alignment is completed, next, fine alignment is performed on the mask. Fine alignment refers to aligning the mask alignment mark 2 with the opening pattern formed on the fiducial mark plate 16 on the substrate stage 15. Hereinafter, this fine alignment will be described with reference to FIGS. Fig. 12 shows the exposure system of Fig. 1 in which a light source 23 and a fiber glass 24 are added to explain the fine alignment, and the fiducial mark plate 16 is connected to the projection optical system 13 FIG. 3 is a diagram illustrating a state where the light source is moved on the optical axis. The common components are denoted by the same reference numerals, and the description thereof is omitted.

A fiducial mark plate 16 on which a fiducial mark is formed is mounted on the substrate stage 15. The fiducial mark plate 16 is provided with, for example, two openings 21 and 22 through which light passes, and the openings 21 and 22 have alignment patterns corresponding to the marks for mask alignment. (A so-called fiducial mark, hereinafter also referred to as reference numerals 21 and 22) are formed.

The light source 23 emits the alignment light AL having the same wavelength as the exposure light EL, and irradiates the aperture patterns 21 and 22 through the optical fiber 24. The alignment light AL passes through the aperture patterns 21 and 22, the projection lens 13 and the mask alignment mark 2 of the mask 1, and is received by the alignment microscope 17. Alignment The microscope 17 simultaneously photoelectrically detects the aperture patterns 21 and 22 and the mark 2 for mask alignment, which are in a conjugate positional relationship, and detects the relative position of each mark through signal processing (image processing). .

Based on the relative position between the opening patterns 21 and 22 detected by the alignment microscope 17 and the mask alignment mark 2, the controller 21 (FIG. 8) eliminates the positional deviation at the relative position to zero. The mask stage 10 (FIGS. 8 and 12) is driven via the driving device 22 (FIG. 8) to move the mask 1 as described above.

By the above-described fine alignment of the mask, the mask alignment mark 2 and the opening patterns 21 and 22 are accurately aligned, and the position of the mask in the coordinate system on the substrate stage side is accurately controlled. Will be.

Next, the coordinates of the substrate stage and the coordinates on the substrate, that is, the baseline measurement, are performed using the off-axis alignment optical system 18. This basic line measurement is disclosed in detail in, for example, USP No. 5 224 3195 (Japanese Patent Application Laid-Open Publication No. Hei 4-324 923), and a description thereof will be omitted. Modification example 1 of mark for mask alignment

FIG. 4 shows a first modification of the mask alignment mark. In the above-described embodiment, each section 3 is formed by an area partitioned by two adjacent vertical lines and two horizontal lines.In the first modification, each section 3 is formed by an isolated mark. It was formed.

That is, the mask alignment mark 2 of Modification 1 is composed of a plurality of rectangles 6, and each rectangle 6 forms one section 3. The centroids (intersections of the center lines of the left and right sides and the center lines of the upper and lower sides) of each rectangle 6 are arranged in a grid pattern in the X and y directions. However, the pitch in the X direction and the pitch in the y direction need not necessarily be the same. The size and arrangement pitch of each rectangle 6 is such that at least one rectangle 6 can enter the field of view of the mask alignment microscope without moving the mask 1. Hereinafter, since there is no difference in principle between the horizontal direction and the vertical direction, only the horizontal direction, that is, the X direction will be described.

One of the rectangles 6S is used as a reference for the entire mask alignment mark 2, and The point passing through the centroid of the reference rectangle 6S is set as the origin of the x-y coordinates. Let P be the pitch of the centroid of each rectangle 6 in the X direction. Also, let Do be the interval between the left and right sides of the reference rectangle 6S. The distance D between the left and right sides of each rectangle 6 is formed so as to increase by d as it proceeds toward the right rectangle.

Now, as a result of measuring the distance D between the left and right sides of one rectangle 6 within the field of view of the mask alignment microscope, D = D. + n d (n = 0, ± 1, ± 2, ····), the measured X coordinate of the centroid of rectangle 6 is

X = n P

Given by Note that the above equation is obtained by substituting n = (D-Do) d.

= (P / d)-D-(P / d)-D o

It is expressed as Therefore, in this embodiment, the measured X coordinate of the centroid of the rectangle 6 is represented by a linear function of the distance D between the left and right sides of the rectangle 6.

Thus, by measuring the distance D between the left and right sides of one rectangle 6 and the distance between the upper and lower sides with a mask alignment microscope, the position of the measured centroid of the rectangle 6 with respect to the centroid of the reference rectangle 6S is obtained. You can know the relationship. That is, the X and y coordinates of the centroid of the measured figure 6 in the X-y coordinate system having the centroid of the reference rectangle 6S as the origin can be obtained.

On the other hand, the positional relationship of the measured rectangle 6 with respect to the coordinate system XY of the mask alignment microscope can be determined by measuring the rectangle 6 with a microscope. That is, it is possible to know the X and Y coordinates of the centroid of the reference rectangle 6S based on the microscope coordinate system XY. As a result, the direction and amount of movement of mask 1 required to match the centroid (the origin of the X-y coordinate system) of the reference rectangle 6S with the origin (the detection origin) of the coordinate system of the mask alignment microscope are determined. , You can know immediately.

—Variation 2 of mask alignment mark —

FIG. 5 shows a second modification of the mask alignment mark 2. In the above embodiment and Modification 1, the interval at which the position information of each section 3 is given is a distance that takes only a positive value. However, in Modification 2, both positive and negative values can be taken. The position information of each section 3 is given by the distance. In other words, the mask alignment mark 2 of Modification 2 is composed of a plurality of outer rectangles 7 and an inner rectangle 8 arranged inside each outer rectangle 7, and these inner and outer rectangles 7, Block 3 is configured. The outer rectangles 7 are formed congruently with each other, and are arranged in a grid pattern in the X direction and the y direction. However, the pitch in the X direction and the pitch in the y direction need not necessarily be the same. The size and the arrangement pitch of each outer rectangle 7 are formed such that at least one outer rectangle 7 can enter the field of view of the mask alignment microscope without moving the mask 1. Also, each inner rectangle 8 is formed congruently with each other. However, the positional relationship of each inner rectangle 8 within the outer rectangle 7 differs for each section 3. Hereinafter, since there is no difference in principle between the horizontal direction and the vertical direction, only the horizontal direction, that is, the X direction will be described.

One of the outer rectangles 7 S is used as a reference for the entire mask alignment mark 2, and the centroid of the reference outer rectangle 7 S is used as the origin of the X—y coordinates. Let P be the pitch of the centroid of each outer rectangle 7 in the X direction. In this modification, the outermost rectangle 7R is further drawn only on the reference outer rectangle 7S to clearly indicate that it is the reference outer rectangle 7S. In the reference outer rectangle 7S, the centroids of the inner and outer rectangles 7S and 8 coincide.

However, as one goes to rectangles 7 and 8 on the side of the reference outer rectangle 7 S, the centroid of the inner rectangle 8 moves to the right by d more than the centroid of the outer rectangle 7, and similarly the left rectangle 7, As we go to 8, the centroid of the inner rectangle 8 moves to the left by d, ie, to the right by d, than the centroid of the outer rectangle 7.

Now, as a result of measuring the distance D in the X direction from the centroid of one outer rectangle 7 in the field of view of the mask alignment microscope to the centroid of the inner rectangle 8 inside the rectangle, D = nd (n = 0, ± 1, ± 2, ...), the measured X-coordinate of the centroid of the outer rectangle 7 is

X = n P

Given by The above equation is obtained by substituting n = D / d.

X = (P / d) D

It is expressed as Therefore, in this variant, the X coordinate of the centroid of the measured outer rectangle 7 Is expressed as a linear function of the distance D in the x direction from the centroid of its outer rectangle to the centroid of its inner inner rectangle 8, and is more specifically proportional.

Thus, by measuring the distance D in the X direction and the distance in the y direction from the centroid of one outer rectangle 7 to the centroid of the inner rectangle 8 inside it by a mask alignment microscope, a diagram of the reference outer rectangle 7S is obtained. In the coordinate system X _ y with the center as the origin, the positional relationship of the measured centroid of the outer rectangle 7, that is, the x and y coordinates can be known. On the other hand, the measurement for the coordinate system X-Y of the mask alignment microscope The positional relationship between the centroids of the outer rectangle 7 is determined by measuring the outer rectangle 7 with a microscope. That is, the X-Y coordinates of the centroid of the reference outer rectangle 7S based on the microscope coordinate system X-Y can be known. As a result, the movement of the mask 1 required to match the centroid of the reference outer rectangle 7 S (the origin of the coordinate system X—y) with the origin of the coordinate system X—Y (the detection origin) of the mask alignment microscope The direction and amount of movement can be immediately known.

Next, Modification 2 will be described in more detail with numerical values. Each outer rectangle 7 can be a square with sides 1 5 0 // m, each inner rectangle 8 can be a square with sides 50 m, and the outermost rectangle 7 R is sides 250 m can be square. The arrangement pitch of each outer square 7 can be 450 m in the X direction and 300 m in the y direction.

In this case, the image range 9 of the mask alignment microscope is as follows. That is, first of all,

Image area> Section size

Must be, therefore 1 5 0 m X 1 5 0 m above _c but is required size This is often not to drive the mask stage 1 0, the entire area of the outer positive square 7 Cannot fit within image range 9.

Therefore, of the two outer squares adjacent to each other in the X direction, the left side of the outer square is likely to be missing from the image range 9, and the right outer square is the right end. This is the limit that can detect at least one outer square in the X direction without driving the mask stage 10. Therefore, image range> section size + array pitch Therefore, the image range 9 of the mask alignment microscope must be longer than 150 + 450 = 600 m in the X direction, and 150 + 30 in the y direction. It must be longer than 0 = 450 μτη. Therefore, as the image range 9 of the mask alignment microscope, one having x = 660 m and y = 500 m can be used.

The unit shift d of the centroid of the inner square 8 can be 9 m in both the X and y directions. in this case,

X = (P / d) D = (450/9) D = 50XD

Therefore, 50 times the shift amount D of the centroid of the inner square 8 is the distance from the centroid of the reference outer square 7 S to the centroid of the outer square 7 measured.

Also, from the limit that the inner square 8 does not protrude outside the outer square 7, five outer squares can be arranged on the upper, lower, left and right sides of the reference outer square 7S. Therefore, the outer squares of the 1 1 X 11 array can be conveniently placed, and therefore the size of the overall mask alignment mark is

X = 1 0 X 4 5 0 + 1 5 0 = 4 65 0 μ.

y = 1 0 X 3 0 0 + 1 5 0 = 3 1 5 0 m

Becomes

Next, a specific measurement procedure will be described. The processing of the left and right mask alignment mark images observed by the left and right mask alignment microscopes is the same, so only one of them will be described for the time being.

First, the outer square 7 is selected from the image of the mask alignment mark observed by the mask alignment microscope. In other words, when multiple outer squares 7 are observed, any outer square 7 is selected. Next, the vertical lines of the left and right sides of the outer positive square 7 selected position Xu relative to the coordinate system X- Y mask § Rye instrument microscope, measuring the X _12. That is, capital letters are used when the coordinate system X-Υ of the mask alignment microscope is used as a reference. Likewise some upper and lower sides of the horizontal line, the position Yu relative to the coordinate system X- Upsilon of Masukuaraimen bets microscope, measuring the Y _12.

Next, the left side constituting the inner square 8 placed inside the selected outer square 7 For the vertical line on the right side, measure the position Χ '", Χπ with respect to the coordinate system X—Y of the mask alignment microscope. Similarly, for the horizontal line on the upper and lower sides, measure the coordinate system X— の of the mask alignment microscope. Measure the positions Υ ₂₁ and Υ ₂₂ with reference to。。からからからからからからからからからからからからからからからからからからから. The processing can be speeded up.

Next, with reference to the coordinate system X _ の of the mask alignment microscope, the position X, of the central vertical line of the left and right sides of the outer square 7, the position 中央, of the central horizontal line of the upper and lower sides,, and the left and right sides of the inner square 8 position chi ₂ central vertical line of the position Upsilon ₂ central horizontal line of the upper and lower sides Ru determined by the following equation.

X, = (X π + X η) / 2

Υ! = (Υ π + Υ π) Ζ 2

X (Χ ₂₁ + Χ ₂₂ ) / 2

Next, the distance D from the central vertical line of the outer square 7 to the central vertical line of the inner square 8 and the distance H from the central horizontal line of the outer square 7 to the central horizontal line of the inner square 8 are calculated by the following equations.

D = X X

H = Υ ₂ -Y

As a result, the position (図 ,, y!) Of the centroid of the outer square 7 measured with reference to the centroid of the reference outer square 7 S, that is, in the xy coordinate system is

X i = 5 0 X D

y! = 5 0 X H

Becomes

On the other hand, [center center position (XC, YC) of the reference outside square 7S with reference to the coordinate system XY of the mask alignment microscope] = [measurement with reference to the coordinate system XY of the mask alignment microscope] Centroid position of the outer square 7 (Xl, Y1)]-[referenced centroid position of the measured outer square 7 (xl, y) based on the centroid (coordinate system Xy) of the outer square 7S 1)], the position (XC, YC) of the reference outer square 7S with respect to the coordinate system X—Y of the mask alignment microscope is as follows.

The above processing is performed for each of the left and right mask alignment microscopes. The position of the reference outer square 7 S of the right Masukuaraimen Preparative mark relative to the coordinate system X- Y of the right mask § Lai instrument microscope and (X _R, YR), the coordinate system X- Y of the left Masukuaraimen bets microscope reference position of the reference outer square 7 S mark mask § Rye placement of the left (X _L, YL), and to know actually the accurate despite not observe the respective reference outer square 7 S it can.

As a result, the center position (Xe, Yc) of the reference outer square 7S of the left and right mask alignment marks and the rotation angle 0 of the mask are based on the coordinate system with the origin at the center of the left and right mask alignment microscopes. As

Xc = (X R + X L) / 2

Yc = (Y R + Y L) / 2

Becomes Here, L is the distance between the origins of both mask alignment microscopes. Based on this result, the mask stage is driven and fine alignment is performed.

In the mask alignment mark of this modification, the inner rectangle 8 is arranged inside the outer rectangle 7, but a cross-shaped figure can be arranged inside the outer rectangle 7.

—Variation 3 of mask alignment mark —

FIG. 6 shows a third modification of the mask alignment mark 2. In the above-described embodiment and the first modified example and the second modified example, the section 3 had one interval or distance in one direction (X or y). It has two intervals in one direction (X or y).

That is, the mask alignment mark 2 of Modification 3 is composed of a plurality of vertical lines 4 and a plurality of horizontal lines 5, and is defined by three adjacent vertical lines 4 and three adjacent horizontal lines 5. The divided area is one section 3. Therefore, adjacent sections 3 overlap each other. Also, each section 3 does not have to move the mask 1. At least one section 3 is formed so that it is within the field of view of the mask alignment microscope.

The central vertical line 4S and horizontal line 5S are reference lines for the entire mask alignment mark 2, and coincide with the coordinate axes of the coordinate system X_y. The X coordinate of the reference vertical line 4S is X = 0. Other vertical lines are arranged symmetrically. The interval from the reference vertical line 4 S to the next vertical line is 1 25 wm, the next interval is 30 m, the subsequent intervals are widened by 10 ^ m, and the last interval is 200 im I have. Therefore, the distance from the reference vertical line 4 S to the rightmost vertical line or the leftmost vertical line is:

1 2 5 + 3 0 + 4 0 + 5 0 + 6 0 + + 1 9 0 + 2 0 0

= 2 1 9 5 m

It is. The total number of vertical lines is 37, and the width of the entire alignment mark is 219 x 2 = 430 m.

Similarly, the y coordinate of the reference horizontal line 5S is y = 0. The other horizontal lines are arranged vertically symmetrically. The interval from the reference horizontal line 5S to the adjacent horizontal line is 125 m, the next interval is 30 ^ m, the subsequent intervals are 6 m wide, and the last interval is 150 nm. Therefore, the distance from the reference horizontal line 5 S to the uppermost horizontal line, or the distance from the lowermost horizontal line, is

1 2 5 + 3 0 + 3 6 + 4 2 + 4 8 + + 1 9 4 + 2 0 0

= 2 0 15 m

It is. The total number of horizontal lines is 43, and the vertical width of the entire mask alignment mark is 201 5 X 2 = 400 3. The width of each vertical and horizontal line is 15 m.

In this modification, for example, since the vertical lines are symmetrically arranged, there are two vertical lines at two places where the interval between two adjacent vertical lines is the same. Therefore, in this modified example, an area defined by three adjacent vertical lines and three adjacent horizontal lines is defined as one area.

In this case, the image range 9 of the mask alignment microscope is as follows. That is, since the minimum width of the image area 9 is determined by the maximum value of the distance between four adjacent vertical lines, 180 + 190 + 200 = 570 m (more precisely Is the line width 15 m 585 m). Similarly, since the minimum height of the image area 9 is determined by the maximum value of the distance between four adjacent horizontal lines, 1 3 8 + 1 4 4 + 1 5 0 = 4 3 2 H m (more precisely Becomes 5 4 7 Π1) considering the line width 1 5 im. Therefore, as the image range 9 of the mask alignment microscope, one having x = 660 m and y = 500 m can be used.

A specific measurement procedure is performed as follows. The processing of the left and right mask alignment mark images observed by the left and right mask alignment microscopes is the same, so only one of them will be described for the time being.

First, from the images of the mask alignment mark observed by the mask alignment microscope, the section divided by three adjacent vertical lines and three horizontal lines is selected. That is, when four or more vertical lines or four or more horizontal lines are observed, there are multiple sections, but an arbitrary section is selected. Next, for the three vertical lines that make up the selected section, the positions Χ, Χ ₂ , and Χ ₃ are measured in order from the left vertical line with respect to the coordinate system XY of the mask alignment microscope. That is, when the coordinate system X-— of the mask alignment microscope is used as a reference, the coordinates are represented by capital letters X and Υ. Similarly, for the three horizontal lines, measure the positions,, Υ ₂ , Υ ₃ with reference to the coordinate system X- Υ of the mask alignment microscope in order from the bottom. When measuring positions Χ, Χζ, Χζ ₃ , the image signal is compressed in the y direction to detect the peak position of the signal. Similarly, when measuring positions Υ,, Υ ₂ , Υ ₃ , the image signal is Compress in the X direction to detect the peak position of the signal.

Then, the distance D ₂ of the selected left 2 vertical lines spacing D right two vertical lines of the compartments, the distance H ,, upper two horizontal lines spacing of H ₂ of the lower two horizontal lines by the following equation Ask.

D! = Χ ₂ -X.

2 ~ X 3― Λ.

H, = Y _z -Y!

Η ₂ = Υ ₃ -Υ ₂

As a result, the position χ ₂ of the center vertical line among the three selected vertical lines in the coordinate system X—y with reference to the reference vertical line 4 S is as follows.

When D, = D ₂ + 10: x 2 =-1 2 5-3 0-4 0-5 0 ———— D ₂

When D, = 30 and D ₂ = 125:

x F — 1 2 5

When D, = D ₂ = 1 2 5:

x ₂ = 0

When D! = 1 2 5 and D ₂ = 30:

x ₂ = 1 2 5

When D! = D 2-10:

x 2 = 1 2 5 + 3 0 + 4 0 + 5 0 +--+ D,

Similarly, the position y ₂ of the center horizontal line among the three selected horizontal lines in the coordinate system X—y with reference to the reference horizontal line 5 S is as follows.

HH ₂ + 6 bets:

y ₂ =-1 2 5-3 0-36-4 _2-

When H, = 30 and H 2 = 1 25:

y ₂ =-1 2 5

When H, = H ₂ = 1 2 5:

y 2 = 0

When H, = 1 2 5 and H ₂ = 30:

y 2 = 1 2 5

For HH ₂ _ 6:

y 2 = 1 2 5 + 3 0 + 3 6 + 4 2 +

Therefore, the position X C of the reference vertical line 4 S and the position Y C of the reference horizontal line 5 S with respect to the coordinate system X—Y of the mask alignment microscope are

XC≡ Χ ₂ -X 2

YC≡ Y ₂ -y ₂

Can be easily obtained from

The above processing is performed for each of the left and right mask alignment microscopes. Position of the right side of the mask § Rye instrument microscope coordinate system X- Y reference vertical lines of the right Masukuaraimen Preparative mark relative to the 4 S and the reference horizontal line 5 S and (X _R, YR), left Masukua The positions (XL, YL) of the reference vertical line 4 S and the reference horizontal line 5 S of the mask alignment mark on the left side with respect to the coordinate system X — Y of the alignment microscope are actually set to the respective reference vertical lines 4 S Despite not observing the reference horizontal line 5S, it is possible to know exactly. As a result, the center position (Xc, Yc) of the reference vertical line 4S and the reference horizontal line 5S of the left and right mask alignment marks and the rotation angle 0 of the mask are determined with the origin at the center of the left and right mask alignment microscopes. Based on the coordinate system

Becomes Here, L is the distance between the origins of both mask alignment microscopes. Based on this result, the mask stage is driven to perform fine alignment.

—Variation 4 of mask alignment mark —

FIG. 7 shows a fourth modification of the mask alignment mark 2. The mask alignment mark 2 of this modification is the same as that of the above-described modification 3, but the arrangement of the intervals is different from that of the above-mentioned modification 3. That is, in the above-described modification 3, the interval between the vertical lines basically changes by 10 m except for the central portion, and the interval between the horizontal lines basically changes by 6 m except for the central portion. No. 4 has a configuration in which the amount of change in the interval is not constant.

The central vertical line 4 S and horizontal line 5 S are the reference lines for the entire mask alignment mark 2 and coincide with the coordinate axes of the coordinate system X—y. The X coordinate of the reference vertical line 4S is x = 0. Other vertical lines are arranged symmetrically. P (= 125 m), A (= 200 m), B (= 180 / zm), C (= 170) m), D (= 1650m), E (= 1900m), F (= 1550m), A, C, E, A, D, F, B, E it can. Here, A (= 190 m) and E (= 200 μm), and B, C, D, and F are 180, 170, 160, and 150 m, respectively. Either value may be taken.

The above array “PABCDEFACE AD FBE” is a combination of adjacent intervals Nothing is thought to be the same. This combination can be considered, for example, by the following method. First, consider a regular hexagon in which the six vertices ABCDEF are arranged in that order. In this regular hexagon, trace each point in such a way as to make the stroke as long as possible. For example, tracing ABCDEFA in order, then tracing every other CEA, and tracing DFBE, will complete the longest stroke that connects the vertices of the regular hexagon. Arranging ABCDEFs in this one-stroke manner may result in an arrangement where adjacent combinations are not the same. In the above, P is added at the beginning of this sequence. Note that A and E are assigned longer intervals because they appear more frequently than B, C, D, and F.

The arrangement of the spacing from the reference vertical line 4 S to the left is the same, so the arrangement of the spacing in the X direction is symmetrical in the middle

E B F DA E C A F E D C B A P P A B C D E F A C E AD F B E

Becomes As can be seen from the above formula, any combination considering the order of two adjacent intervals is not the same as each other. The total number of vertical lines is 31 and the width of the entire mask alignment mark is 5230 m.

Similarly, the y coordinate of the reference horizontal line 5S is y = 0. The other horizontal lines are arranged vertically symmetrically. The distance from the reference horizontal line 5 S to the adjacent horizontal line is P = 125 m, A and E are respectively 150 m and 144 m, and B, C, D, and F are 1 3 8 1 3 2 1 2 6 1 2 0 形成 Both the arrangement of the spacing upward from the reference horizontal line 5 S and the arrangement of the spacing downward are the same as the arrangement in the X direction It has been. Therefore, the total number of horizontal lines is 31 and the overall width of the mask alignment mask is 408 m. As described above, according to the present modification, the number of lines (carved lines) can be reduced.

Further, the image range 9 of the mask alignment microscope of this modification is the same as that of the modification 3, that is, the minimum width of the image range 9 is 570 am and the minimum vertical width is 432 u m. Therefore, as the image range 9 of the mask alignment microscope, one having x = 660 m and y = 500 m can be used.

However, in this modified example, based on the measurement result of the distance D2 between the _two vertical lines on the left side of the selected section and the distance D2 between the two vertical lines on the right side, the selected vertical line 4S was used as a reference. Book vertical line Of central processing for obtaining the position chi ₂ vertical lines, it can not be done by a formula. Therefore, the position X ₂ is stored as a function of the interval DD ₂ in the form of a table x ₂ (D, D ₂ ).

After obtaining the position x ₂ of the center vertical line by the table x _₂ (D ,, D _2), the position XC of Masukua Leimen preparative microscope coordinate system X- Y reference vertical lines 4 S on the basis of the

X≡ XX ₂

Can be easily obtained from However, X ₂ is the position (X coordinate) of the center vertical line of the selected three vertical lines in the coordinate system X-Υ of the mask alignment microscope.

At this time, in this modified example, although the intervals A to F are different between the vertical line and the horizontal line, since the same arrangement is used for the arrangement of the intervals, the table for obtaining the position X ₂ of the central vertical line is used. x ₂ (D ,, D ₂ ) has the same format as the table y ₂ (H, H ₂ ) for determining the position of the center horizontal line y ₂ . Therefore, by carrying only one table, the position (x _2, y can be obtained, and this, a microscope coordinate system X- reference vertical line 4 in Upsilon S and the reference horizontal line 5 S position coordinates (X, Υ) can be obtained.

Of course, the number of types of intervals A to F used for the vertical line and the horizontal line can be changed. However, in that case, the table x ₂ (D κ D) for determining the position of the central vertical line χ ₂ and the table y ₂ (H, H ₂ ) for determining the position of the central horizontal line y You will have different types of tables.

In each of the above modifications, the case where the present invention is applied to two-dimensional positioning has been described. However, the present invention can also be applied to one-dimensional positioning.

Note that the number of vertical and horizontal lines in Figs. 3 to 7 cannot be completely written due to the size of the figures, and are less than the number described in the text, but are limited to the contents of these figures. is not.

In the above embodiment, the example of the mask in the semiconductor exposure apparatus has been described, but the present invention is not limited to this. INDUSTRIAL APPLICABILITY The present invention can be applied to any position detection member that performs position detection or positioning by observing or imaging a mark with a reticle or wafer, or a microscope or an imaging device. It can also be applied to position detection of masks in charged particle beam exposure equipment and X-ray exposure equipment. Charged particle beam exposure In the case of the apparatus, the position deviation may be corrected based on the result of the position detection, such as by deflecting the electron beam without driving the mask or the like.

Further, in the above embodiment, an example in which the two-dimensional CCD sensor is used for the alignment microscope 17 has been described, but the present invention is not limited to this. A one-dimensional line sensor may be used as long as it detects the parallel line interval.

Further, in the above-described embodiment, an example has been described in which the so-called figures having different parallel line intervals and rectangular shapes are different, but the present invention is not limited to this example. For example, the transmittance of the mask alignment mark detected by the alignment microscope 17 may be made different depending on the position. In other words, the shape information such as the detected line width or the distance between lines is the same, but for example, the transmittance of the line passing through the center of the mark is the highest, and the line that is farther from the mark center is more transparent. Decrease rate. Then, by detecting the line having different transmittance, the gray value (0 to 255) of the line is obtained, and the difference from the gray value of the mark center line is calculated to obtain the distance from the mark center. You may do so. In this case, it is sufficient to simply provide a photoelectric element capable of detecting luminance and the like. <

Claims

The scope of the claims

1. In the method for detecting the position of a position-detected member having a position detection mark formed thereon, the position detection mark includes a predetermined reference point and a plurality of mark elements including position information from the reference point,

A detector for detecting at least one of the mark elements formed on the position detection mark,

Based on the detected mark element, the relative position between the reference point and the detection origin of the detector is determined,

Based on the obtained relative position, the position of the position detection member with respect to the detection origin of the detector is detected.

2. A method for detecting the position of claim 1,

Each of the plurality of mark elements is a different figure.

3. A method for detecting the position of claim 2,

The figure includes parallel lines,

The relative position is obtained from an interval between the parallel lines.

4. The method for detecting the position of claim 2,

The figure includes a rectangular figure,

The relative position is obtained from the size of the rectangular shape.

5. The method for detecting the position of claim 2,

The figure includes a double rectangle,

The relative position is obtained from the position of the inner rectangle in the outer rectangle of the double rectangle.

6. The method for detecting the position of claim 1, The reference point is a center point of the position detection mark.

7. A method for detecting the position of claim 1,

The position detection member is a mask used in a semiconductor exposure apparatus, and the position detection mark is formed on the mask.

8. In the position detecting device for detecting the position of the detected member,

The position detection member has a position detection mark including a predetermined reference point and a plurality of mark elements including position information from the reference point,

A detector for detecting at least one of the mark elements;

A calculator that calculates a relative position between the reference point and a detection origin of the detector based on a detection result of the detector.

9. The position detecting device of claim 8,

Each of the plurality of mark elements is a different figure.

10. The position detecting device of claim 9, wherein

The figure includes parallel lines,

The relative position is obtained from an interval between the parallel lines.

1 1. The position detecting device of claim 9,

The figure includes a rectangular figure,

The relative position is obtained from the size of the rectangular shape.

1 2. The position detecting device of claim 9,

The figure includes a double rectangle,

1 3. The position detecting device of claim 8,

The reference point is a center point of the position detection mark.

1 4. The position detecting device of claim 8,

15 5. The position detection member whose position is detected by the position detection device is:

Having a position detection mark formed at a predetermined position,

The position detection mark includes a predetermined reference point and a plurality of mark elements including position information from the reference point,

The mark elements are arranged such that at least one is detected by a detector of the position detecting device.

1 6. The position detection member of claim 15,

Each of the plurality of mark elements is a different figure.

1 7. The position detection member of claim 16,

The figure includes parallel lines,

The relative position is obtained from an interval between the parallel lines.

1 8. The position detection member of claim 16,

The figure includes a rectangular figure,

The relative position is obtained from the size of the rectangular shape.

1 9. The position detection member of claim 16,

The figure includes a double rectangle,

20. The position detection member of claim 15, wherein

The reference point is a center point of the position detection mark.

2 1. The position detecting member of claim 15,

The position detection member is a mask used in a semiconductor exposure apparatus.

2 2. An illumination optical system that illuminates the pattern on the mask,

A projection optical system for projecting an image of the pattern illuminated by the illumination optical system onto a photosensitive substrate;

A mask stage on which the mask is mounted,

A mask alignment microscope for detecting mask alignment marks formed on the mask,

A driving device for driving the mask stage,

A semiconductor exposure apparatus comprising: a control device that controls the driving device based on a detection result of the mask alignment microscope;

The mask alignment mark includes a predetermined reference point and a plurality of mark elements including position information from the reference point,

The plurality of mark elements are arranged such that at least one is detected by the mask alignment microscope;

The control device obtains a relative position between a detection origin of the mask alignment microscope and a reference point of the mask alignment mark based on the mark element position information detected by the mask alignment microscope. The driving device is controlled to drive the mask stage based on the relative position.