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WO1999051796A1 - Procede permettant de retirer un photoresist et des residus de gravure au plasma - Google Patents

Procede permettant de retirer un photoresist et des residus de gravure au plasma Download PDF

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Publication number
WO1999051796A1
WO1999051796A1 PCT/US1998/006907 US9806907W WO9951796A1 WO 1999051796 A1 WO1999051796 A1 WO 1999051796A1 US 9806907 W US9806907 W US 9806907W WO 9951796 A1 WO9951796 A1 WO 9951796A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning composition
hydroxylammonium
substrate
group
water
Prior art date
Application number
PCT/US1998/006907
Other languages
English (en)
Inventor
Vincent G. Leon
Kenji Honda
Eugene F. Rothgery
Original Assignee
Olin Microelectronic Chemicals, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olin Microelectronic Chemicals, Inc. filed Critical Olin Microelectronic Chemicals, Inc.
Priority to KR1020007011074A priority Critical patent/KR20010042461A/ko
Priority to JP2000542506A priority patent/JP2002510752A/ja
Priority to AU69556/98A priority patent/AU6955698A/en
Priority to PCT/US1998/006907 priority patent/WO1999051796A1/fr
Priority to EP98915347A priority patent/EP1070157A4/fr
Publication of WO1999051796A1 publication Critical patent/WO1999051796A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • This invention relates to a cleaning method for use in microelectronics manufacturing, and more particularly to a non-corrosive method for removing photoresist and plasma etch residues formed on wafer substrates after plasma etching of metal layers or oxide layers deposited on the substrates.
  • positive photoresists are used as an intermediate mask for transferring an original mask pattern of a reticule onto wafer substrates by means of a series of photolithography and plasma etching steps.
  • One of the final steps in the microcircuit manufacturing process is the removal of the patterned photoresist films from the substrates. In general, this step is affected by one of two methods.
  • One method involves a wet stripping step in which the photoresist-covered substrate is brought into contact with a photoresist stripper solution that consists primarily of an organic solvent and an amine.
  • stripper solutions cannot completely and reliably remove the photoresist films, especially if the photoresist films have been exposed to UV radiation and plasma treatments during fabrication.
  • An alternative method of removing a photoresist film involves exposing a photoresist-coated wafer to oxygen plasma in order to burn the resist film from the substrate surface in a process known as oxygen plasma ashing.
  • Oxygen plasma ashing has become more popular in the microcircuit manufacturing process because it is carried out in a vacuum chamber and, hence, is expected to be less susceptible to airborne particulate or metallic contamination.
  • EKC 265 available from EKC Technology, Inc.
  • ACT 935 available from Ashland Chemical
  • R-10 a post-strip rinse available from Mitsubishi Gas Chemical, is composed of water, alkanolamine and a sugar alcohol, wherein the sugar alcohol acts as a corrosion inhibitor.
  • Japanese Patent Application No. 7-028254 assigned to Kanto Kagaku, discloses a non-corrosive resist removal liquid comprising a sugar alcohol, an alcohol amine, water, and a quaternary ammonium hydroxide.
  • PCT Published Patent Application No. WO 88-05813 teaches a positive or negative photoresist stripper containing butyrolactone or caprolactone, quaternary ammonium hydroxide compound, and optionally, a nonionic surfactant.
  • U.S. Patent No. 4,239,661 to Muraoka et al. discloses a surface-treating agent comprising an aqueous solution of 0.01 % to 20% trialkyl (hydroxyalkyl) ammonium hydroxide. This agent is useful in removing organic and inorganic contaminants deposited on the surface of intermediate semiconductor products.
  • U.S. Patent No. 4,904,571 to Miyashita et al. teaches printed circuit board photoresist stripper composition containing a solvent (e.g., water, alcohols, ethers, ketones, and the like), an alkaline compound dissolved in the solvent, including quaternary ammonium hydroxide, and a borohydride compound dissolved in the solvent.
  • a solvent e.g., water, alcohols, ethers, ketones, and the like
  • an alkaline compound dissolved in the solvent including quaternary ammonium hydroxide, and a borohydride compound dissolved in the solvent.
  • U.S. Patent No. 5,091,103 to Dean et al. teaches a positive photoresist stripping composition containing: (A) N-alkyl-2-pyrrolidone; (B) 1,2-propanediol; and (C) tetraalkylammonium hydroxide.
  • U.S. Patent No. 5,139,607 to Ward et al. teaches positive and negative photoresist stripping composition containing: (A) tetrahydrofurfuryl alcohol; (B) a polyhydric alcohol (e.g., ethylene glycol or propylene glycol); (C) the reaction product of furfuryl alcohol and an alkylene oxide; (D) a water-soluble Bronstead base type hydroxide compound (e.g., alkali metal hydroxide, ammonium hydroxide and tetramethyl ammonium hydroxide); and (E) water.
  • the composition may also contain up to 1% of a nonionic surfactant.
  • U.S. Patent No. 5,174,816 to Aoyama et al. discloses a composition for removing chlorine remaining on the surface of an aluminum line pattern substrate after dry etching, which composition comprises an aqueous solution containing 0.01 to 15% by weight of a quaternary ammonium hydroxide, such as trimethyl (2-hydroxyethyl) ammonium hydroxide, and 0.1 to 20% by weight of sugar or sugar alcohol, such as xylitol, mannose, glucose and the like.
  • a quaternary ammonium hydroxide such as trimethyl (2-hydroxyethyl) ammonium hydroxide
  • sugar or sugar alcohol such as xylitol, mannose, glucose and the like.
  • compositions used to strip photoresist include a solution of H 2 SO and an oxidizing agent such as H 2 O 2 that oxidizes, and thus decomposes organic photoresists.
  • solutions containing strong acids and oxidizing agents are hazardous to handle, must be applied at elevated temperatures, and require a hot deionized (Dl) water rinse to prevent sulfates from crystallizing on the substrate.
  • Dl hot deionized
  • such solutions have a short active life as the oxidizing agent readily decomposes. Thus, it is necessary to frequently replenish the solutions. The need for solution replenishment renders the process both hazardous and economically inefficient.
  • the present invention is directed to a non-corrosive cleaning method useful for removing photoresist and plasma etch residues from a substrate.
  • the method comprises the steps of: (i) contacting the substrate with an aqueous based cleaning composition having a substantially neutral or mildly acidic pH; and (ii) rinsing the substrate with ozonated water.
  • the substrate is contacted with an aqueous-based cleaning composition having a substantially neutral or slightly acidic pH.
  • aqueous-based cleaning composition having a substantially neutral or slightly acidic pH.
  • One particularly suitable cleaning composition is Microstrip 5002, commercially available from Olin Microelectronic Materials. This stripping solution is described in copending U.S. Patent Application Serial No. 08/709,053, allowed February 20, 1998, the subject matter of which is incorporated herein by reference, and comprises (a) water; (b) at least one hydroxylammonium compound selected from the group consisting of hydroxylammonium salts of the formula (I):
  • Rj, R 2 and R 3 are individually selected from hydrogen, lower alkyl groups having 1 to 4 carbon atoms, lower alkoxy groups having 1 to 4 carbon atoms, hydroxyl and hydroxyl-substituted lower alkyl groups having 1 to 4 carbon atoms, with the proviso that at least two of R 1; R 2 and R 3 are either hydrogen, lower alkyl group or lower alkoxy group, and wherein X is an anionic moiety that is soluble in water and compatible with said quaternary ammonium hydroxide radical; and n is the valence of X and is from 1 to 3; and
  • the amount of acidic hydroxylammonium compound relative to the amount of basic amine and/or quaternary ammonium hydroxide is adjusted such that the pH of the overall composition is maintained within the range of about 2 to about 6, preferably within a range from about 2 to about 4.
  • the acidic hydroxylammonium compound inhibits metal attack. Due to the corrosion inhibiting action of acidic component, and the substantially neutral, or only mildly acidic pH, such compositions can be used in the absence of an additional corrosion inhibiting component.
  • Acidic hydroxylammonium compounds that can be used to form cleaning composition suitable for use with the cleaning method of the invention include hydroxylammonium salts such as hydroxylammonium nitrate (also referred to as HAN) , hydroxylammonium sulfate (also referred to as HAS), hydroxylammonium phosphate, hydroxylammoniun chloride, hydroxylammonium oxalate, hydroxylammonium citrate, hydroxylammonium fluoride, hydroxylammonium chloride, and the like.
  • Alkyl-substituted derivatives of hydroxylammonium salts are also useful: e.g. hydroxyl diethylammonium salts and the like.
  • the hydroxylammonium compound is present in the composition of the invention in the range of about 1% to about 70% by weight.
  • Amines that can be used as the basic component of cleaning compositions useful in the practice of the cleaning method of the invention include hydroxylamine and other alkanolamines such as monoethanolamine, diethanolamine, triethanolamine, diethylene-glycolamine, N- hydroxylethylpiperazine, and the like.
  • Quaternary ammonium hydroxides that can be used as the basic component of cleaning compositions suitable for use in the practice of the cleaning method of the invention include tetraalkylammonium hydroxides having methyl, ethyl, propyl, butyl, hydroxyethyl, and the combinations thereof (e.g., tetramethylammonium hydroxide (hereinafter referred to as TMAH), tetraethyl-ammonium hydroxide, trimethyl hydroxyethylammonium hydroxide, methyl tri (hydroxyethyl) ammonium hydroxide, tetra (hydroxyethyl) ammonium hydroxide, benzyl trimethylammonium hydroxide and the like).
  • TMAH tetramethylammonium hydroxide
  • TMAH tetraethyl-ammonium hydroxide
  • trimethyl hydroxyethylammonium hydroxide methyl tri (hydroxyethyl) ammonium
  • a combination of ammonium hydroxide with one or more quaternary ammonium hydroxides may also be used.
  • the basic compound is present in the cleaning composition of the invention in the range of about 0.01% to about 10% by weight.
  • the balance of cleaning composition can comprise substantially of water.
  • a chelating stabilizer may be optionally included in the cleaning composition to stabilize the hydroxylammonium salts.
  • Suitable chelating stabilizers include triethylenetetramine (hereinafter referred to as TETA); 2,2'- [[methyl-lH-benzotriazol-l-yl)methyl]imino]bisethanol (Tradename is IRGAMET 42), (2-benzothiazolythio)succinic acid (Tradename is IRGACOR 252), tricine, bicine, and other water-soluble chelating compounds.
  • TETA triethylenetetramine
  • 2,2'- [[methyl-lH-benzotriazol-l-yl)methyl]imino]bisethanol Tradename is IRGAMET 42
  • (2-benzothiazolythio)succinic acid (Tradename is IRGACOR 252)
  • tricine, bicine and other water-soluble chelating compounds.
  • the stabilizer is present in the composition of the invention in the range of
  • a surfactant may also be optionally included in the cleaning composition so as to enhance the power of the plasma etching residue removal from the substrate.
  • Suitable surfactants are selected from nonionic types, cationic types and anionic types of surfactants.
  • a surfactant is present in the composition of the invention in the range of about 0.1 ppm to about 100 ppm by weight to a total weight of the cleaning composition.
  • the cleaning composition may also, optionally, contain a minor amount of a corrosion inhibitor such as sugar alcohols, catechol and the like.
  • the substrate can be contacted with the cleaning composition by any suitable method, such as by placing the cleaning composition into a tank and submerging the substrates into the cleaning composition.
  • the substrates are spray rinsed with the cleaning composition.
  • the substrates can then be contacted with the ozonated water using any suitable method, such as by placing the ozonated water into a tank where the substrates can be submerged into the water.
  • the substrates previously contacted with the cleaning composition are rinsed with the ozonated water using a spray rinse.
  • the ozonated water can be a simple mixture of ozone and ultra-pure water, e.g., Dl water.
  • the ozone can be generated by any conventional means, e.g., an ozone generator.
  • the mixing of the ozone and water may be achieved by any suitable method, such as jetting the ozone into the water by a gas feed nozzle; feeding the water and ozone into a spiral mixer; aspirating the gas into the flow of water; and feeding the ozone into a treatment tank regulated at a given pressure so that ozone is dissolved into the water.
  • the cleaning method of the present invention can also be used in combination with a dry stripping process. Dry stripping is typically conducted prior to the present cleaning method. Any suitable dry stripping process can be used including O 2 plasma ashing, ozone gas phase-treatment, fluorine plasma treatment, hot H 2 gas treatment (described in U.S. Pat. No. 5,691 ,117), and the like.
  • the preferred dry stripping process is O 2 plasma ashing.
  • the cleaning method can also be used in combination with a organic wet stripping method.
  • the organic wet strip can be performed either before, after, or both before and after the cleaning method of the present invention. Any conventional organic wet stripping solution can be used and a person skilled in the art would be able to choose the appropriate organic wet stripper.
  • the cleaning method of the invention can be used to replace the organic solvent-based post-strip rinse. Because the preferred cleaning composition is a non-corrosive and neutral to weakly acidic aqueous solution and 10
  • the cleaning compositions used in the present cleaning method may be disposed of in a regular drain system for aqueous chemical wastes.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé permettant de retirer des résidus de gravure au plasma. Ce procédé consiste (i) à mettre le substrat en contact avec une composition de nettoyage, et (ii) à mettre ledit substrat en contact avec de l'eau ozonisée. La composition de nettoyage préférée présente un pH compris entre 2 et 6 et comprend (A) de l'eau, (B) au moins un composé d'hydroxylammonium sélectionné, (C) au moins un composé basique, éventuellement (D) un stabilisant chélatant et éventuellement un agent tensioactif.
PCT/US1998/006907 1998-04-06 1998-04-06 Procede permettant de retirer un photoresist et des residus de gravure au plasma WO1999051796A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020007011074A KR20010042461A (ko) 1998-04-06 1998-04-06 감광성 내식막 및 플라즈마 에칭 잔류물의 제거방법
JP2000542506A JP2002510752A (ja) 1998-04-06 1998-04-06 フォトレジストとプラズマエッチ残滓の除去方法
AU69556/98A AU6955698A (en) 1998-04-06 1998-04-06 Method for removing photoresist and plasma etch residues
PCT/US1998/006907 WO1999051796A1 (fr) 1998-04-06 1998-04-06 Procede permettant de retirer un photoresist et des residus de gravure au plasma
EP98915347A EP1070157A4 (fr) 1998-04-06 1998-04-06 Procede permettant de retirer un photoresist et des residus de gravure au plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/006907 WO1999051796A1 (fr) 1998-04-06 1998-04-06 Procede permettant de retirer un photoresist et des residus de gravure au plasma

Publications (1)

Publication Number Publication Date
WO1999051796A1 true WO1999051796A1 (fr) 1999-10-14

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Country Status (5)

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EP (1) EP1070157A4 (fr)
JP (1) JP2002510752A (fr)
KR (1) KR20010042461A (fr)
AU (1) AU6955698A (fr)
WO (1) WO1999051796A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000066697A1 (fr) * 1999-05-03 2000-11-09 Ekc Technology, Inc. Compositions de nettoyage de dispositifs a semiconducteurs permettant d'eliminer les residus graves organiques et plasmiques
CN109503395A (zh) * 2018-12-26 2019-03-22 济南蓬勃生物技术有限公司 一种稳定的胆碱溶液及其制备方法
CN111508863A (zh) * 2018-12-06 2020-08-07 细美事有限公司 用于处理基板的装置和方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102681332B (zh) * 2006-05-30 2015-03-11 Hoya株式会社 抗蚀剂膜剥离方法、掩模基板的制造方法及转印掩模的制造方法
CN107589637A (zh) * 2017-08-29 2018-01-16 昆山艾森半导体材料有限公司 一种含氟铝线清洗液

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US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
US5314576A (en) * 1992-06-09 1994-05-24 Sony Corporation Dry etching method using (SN)x protective layer
US5494849A (en) * 1995-03-23 1996-02-27 Si Bond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator substrates
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5626681A (en) * 1994-10-21 1997-05-06 Shin-Etsu Handotai Co., Ltd. Method of cleaning semiconductor wafers
US5665168A (en) * 1994-08-30 1997-09-09 Shin-Etsu Handotai Co., Ltd. Method for cleaning semiconductor silicon wafer
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues

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Publication number Priority date Publication date Assignee Title
US5378317A (en) * 1990-10-09 1995-01-03 Chlorine Engineers Corp., Ltd. Method for removing organic film
JP3325739B2 (ja) * 1995-03-27 2002-09-17 株式会社ピュアレックス シリコンウエーハの清浄化方法

Patent Citations (10)

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Publication number Priority date Publication date Assignee Title
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EP1070157A4 (fr) 2003-02-12
JP2002510752A (ja) 2002-04-09
EP1070157A1 (fr) 2001-01-24
AU6955698A (en) 1999-10-25
KR20010042461A (ko) 2001-05-25

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