WO1998000894A3 - Optisches halbleiterbauelement mit tiefem rippenwellenleiter - Google Patents
Optisches halbleiterbauelement mit tiefem rippenwellenleiter Download PDFInfo
- Publication number
- WO1998000894A3 WO1998000894A3 PCT/EP1997/003585 EP9703585W WO9800894A3 WO 1998000894 A3 WO1998000894 A3 WO 1998000894A3 EP 9703585 W EP9703585 W EP 9703585W WO 9800894 A3 WO9800894 A3 WO 9800894A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- waveguide
- optical
- optical semiconductor
- centre
- semiconductor component
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 230000007704 transition Effects 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97936626A EP0847606A2 (de) | 1996-06-28 | 1997-06-26 | Optisches halbleiterbauelement mit tiefem rippenwellenleiter |
JP10503855A JPH11511911A (ja) | 1996-06-28 | 1997-06-26 | ディープリッジ型ウェーブガイドを有する光半導体構成要素 |
US09/029,722 US6181722B1 (en) | 1996-06-28 | 1997-06-26 | Optical semiconductor component with a deep ridged waveguide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19626113.9 | 1996-06-28 | ||
DE19626113A DE19626113A1 (de) | 1996-06-28 | 1996-06-28 | Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1998000894A2 WO1998000894A2 (de) | 1998-01-08 |
WO1998000894A3 true WO1998000894A3 (de) | 1998-02-19 |
Family
ID=7798379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1997/003585 WO1998000894A2 (de) | 1996-06-28 | 1997-06-26 | Optisches halbleiterbauelement mit tiefem rippenwellenleiter |
Country Status (5)
Country | Link |
---|---|
US (1) | US6181722B1 (de) |
EP (1) | EP0847606A2 (de) |
JP (1) | JPH11511911A (de) |
DE (1) | DE19626113A1 (de) |
WO (1) | WO1998000894A2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19626113A1 (de) | 1996-06-28 | 1998-01-02 | Sel Alcatel Ag | Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter |
JP2967737B2 (ja) * | 1996-12-05 | 1999-10-25 | 日本電気株式会社 | 光半導体装置とその製造方法 |
US7164818B2 (en) * | 2001-05-03 | 2007-01-16 | Neophontonics Corporation | Integrated gradient index lenses |
US6253015B1 (en) * | 2000-02-08 | 2001-06-26 | Corning Incorporated | Planar waveguides with high refractive index |
AU2452302A (en) | 2000-07-21 | 2002-02-05 | Mark B Lyles | Sunscreen formulations containing nucleic acids |
US20030044118A1 (en) * | 2000-10-20 | 2003-03-06 | Phosistor Technologies, Inc. | Integrated planar composite coupling structures for bi-directional light beam transformation between a small mode size waveguide and a large mode size waveguide |
FR2816064B1 (fr) * | 2000-10-27 | 2003-03-07 | Thomson Csf | Procede de realisation d'un guide d'onde, notamment optique, et dispositif de couplage optique comportant un tel guide |
US6873638B2 (en) * | 2001-06-29 | 2005-03-29 | 3M Innovative Properties Company | Laser diode chip with waveguide |
US6922508B2 (en) * | 2001-08-17 | 2005-07-26 | Fujitsu Limited | Optical switching apparatus with adiabatic coupling to optical fiber |
US7303339B2 (en) * | 2002-08-28 | 2007-12-04 | Phosistor Technologies, Inc. | Optical beam transformer module for light coupling between a fiber array and a photonic chip and the method of making the same |
US8538208B2 (en) * | 2002-08-28 | 2013-09-17 | Seng-Tiong Ho | Apparatus for coupling light between input and output waveguides |
US7426328B2 (en) * | 2002-08-28 | 2008-09-16 | Phosistor Technologies, Inc. | Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength |
WO2015104836A1 (ja) | 2014-01-10 | 2015-07-16 | 富士通株式会社 | 光半導体素子及びその製造方法 |
US10359569B2 (en) * | 2016-05-09 | 2019-07-23 | Huawei Technologies Co., Ltd. | Optical waveguide termination having a doped, light-absorbing slab |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0641049A1 (de) * | 1993-08-31 | 1995-03-01 | Fujitsu Limited | Optischer Halbleitervorrichtung und Herstellungsverfahren |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0498170B1 (de) * | 1991-02-08 | 1997-08-27 | Siemens Aktiengesellschaft | Integriert optisches Bauelement für die Kopplung zwischen unterschiedlich dimensionierten Wellenleitern |
US5228049A (en) * | 1991-08-27 | 1993-07-13 | Xerox Corporation | Beam control in integrated diode laser and power amplifier |
JPH0794833A (ja) * | 1993-09-22 | 1995-04-07 | Mitsubishi Electric Corp | 半導体レーザおよびその製造方法 |
DE4412254A1 (de) * | 1994-04-07 | 1995-10-12 | Hertz Inst Heinrich | Optisches Koppelglied und Verfahren zu dessen Herstellung |
WO1995031741A1 (de) * | 1994-05-18 | 1995-11-23 | Siemens Aktiengesellschaft | Halbleiterbauelement mit verzweigtem wellenleiter |
JPH08116135A (ja) * | 1994-10-17 | 1996-05-07 | Mitsubishi Electric Corp | 導波路集積素子の製造方法,及び導波路集積素子 |
DE19626130A1 (de) * | 1996-06-28 | 1998-01-08 | Sel Alcatel Ag | Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter |
DE19626113A1 (de) | 1996-06-28 | 1998-01-02 | Sel Alcatel Ag | Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter |
JPH10221572A (ja) * | 1997-02-07 | 1998-08-21 | Fujitsu Ltd | 光装置 |
US6052397A (en) * | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
-
1996
- 1996-06-28 DE DE19626113A patent/DE19626113A1/de not_active Withdrawn
-
1997
- 1997-06-26 WO PCT/EP1997/003585 patent/WO1998000894A2/de not_active Application Discontinuation
- 1997-06-26 JP JP10503855A patent/JPH11511911A/ja not_active Withdrawn
- 1997-06-26 EP EP97936626A patent/EP0847606A2/de not_active Ceased
- 1997-06-26 US US09/029,722 patent/US6181722B1/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0641049A1 (de) * | 1993-08-31 | 1995-03-01 | Fujitsu Limited | Optischer Halbleitervorrichtung und Herstellungsverfahren |
Non-Patent Citations (3)
Title |
---|
BRENNER T ET AL: "COMPACT INGAASP/INP LASER DIODES WITH INTEGRATED MODE EXPANDER FOR EFFICIENT COUPLING TO FLAT-ENDED SINGLEMODE FIBRES", ELECTRONICS LETTERS, vol. 31, no. 17, 17 August 1995 (1995-08-17), pages 1443 - 1445, XP000528969 * |
EL YUMIN S ET AL: "MONOLITHIC INTEGRATION OF GAINASP/INP COLLIMATING GRIN LENS WITH TAPERED WAVEGUIDE ACTIVE REGION", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, HOKKAIDO, MAY 9 - 13, 1995, no. CONF. 7, 9 May 1995 (1995-05-09), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 721 - 724, XP000630704 * |
SATZKE K ET AL: "Ultrahigh-bandwidth (42 GHz) polarisation-independent ridge waveguide electroabsorption modulator based on tensile strained InGaAsP MQW", ELECTRONICS LETTERS, 9 NOV. 1995, UK, vol. 31, no. 23, ISSN 0013-5194, pages 2030 - 2032, XP002049133 * |
Also Published As
Publication number | Publication date |
---|---|
JPH11511911A (ja) | 1999-10-12 |
DE19626113A1 (de) | 1998-01-02 |
WO1998000894A2 (de) | 1998-01-08 |
EP0847606A2 (de) | 1998-06-17 |
US6181722B1 (en) | 2001-01-30 |
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