WO1995029273A1 - Multi-frequency inductive method and apparatus for the processing of material - Google Patents
Multi-frequency inductive method and apparatus for the processing of material Download PDFInfo
- Publication number
- WO1995029273A1 WO1995029273A1 PCT/EP1995/001522 EP9501522W WO9529273A1 WO 1995029273 A1 WO1995029273 A1 WO 1995029273A1 EP 9501522 W EP9501522 W EP 9501522W WO 9529273 A1 WO9529273 A1 WO 9529273A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reactor
- processing
- wall
- reaction chamber
- supplied
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Definitions
- Chemical Vapour Deposition is used on a large scale in industry for depositing layers of a certain material onto a substrate as general term, at typical temperatures of 800°C or more. By lower temperatures. Plasma Enhanced Chemical Vapour Deposition (PECVD) can be used. However this has the disadvantage that defects in uniformity can occur when depositing layers onto three dimensional objects. PECVD is thus mainly used for depositing layers onto flat surfaces. For applying thin films at low temperatures a so called Distributed Electronic Cyclotronic Resonnance Reactor (DECR) is also used for uniformity on 3- di ensions substrates. However DECR apparatus is complex and expensive for industrial applications, w " r .-1st at the same time the deposition rate is too low for most of the industrial applications.
- DECR Distributed Electronic Cyclotronic Resonnance Reactor
- the purpose of the present invention is to provide a method and apparatus wherein at relatively low temperatures, substantially under 800°C for the substrate, layers can be applied whilst achieving a high deposition rate, an excellent three dimensional uniformity and wherein the microstructure of the deposited layers can be accurately controlled and/or electrically conducting layers can be deposited.
- the present invention provides a method for the processing of a substrate of a certain material, wherein the material is heated by induction at relatively low frequency and wherein a relatively high frequency electrical current is used for further processing of said material.
- the word substrate comprises any object of any shape of a certain material and also a certain quantity of bulk material.
- the present invention provides an apparatus for processing a substrate, wherein the apparatus comprises:
- reactor chamber with an outer wall, which is at least partially made from non-electrically conducting material; .
- an electric conductor for generating an alternating electric field in the reactor, which is provided adjacent to the wall of the reactor.
- a preferred embodiment 10 of the apparatus according to the present invention for the carrying out of a preferred embodiment of the method according to the present invention comprises a substantially cylindrical or tubelike reaction chamber 1, around which an electromagnetic winding 2 is arranged.
- An object O for instance made of metal, is suspended or otherwise arranged in the chamber.
- the object 0 can be made of conducting material.
- the wall 1 is built from electrically insulating material, for example alumina. Electrically conducting strips 5 are provided on or in the wall 1, the strips being preferably connected to ground. The electrically conducting strips 5 provide an uniform inductive electric field in the reaction chamber compensating for the limited length thereof.
- a reaction gas entry pipe 3, shown with an arrow, is disposed to a first side whilst on the opposite side a reaction gas exit pipe 4 is disposed.
- a low frequency power generator 6 is provided between two filters 7 and 8 respectively in order to make possible inductive heating of the object O by the winding 2, low frequency here meaning a frequency smaller or equal to 10 kHz. Furthermore, a high frequency power generator 9 is arranged inbetween two filters 11 and 12 and connected to the electromagnetic winding 2 for the generation of electromagnetic power, for. example at a frequency of 13,56 MHz or more, which frequencies are used for plasma generation as is necessary for PECVD processing of the 5 object 0.
- the low frequency power generator 6 can, for example, supply a power of around 20 k atts, whilst the high frequency power generator can supply, for instance, an operating power of around 5 kWatts.
- the object O is connected to a high frequency power bias generator 13, so
- the bias generator 13 can be phase locked with the high frequency generator 9.
- present invention concerns the deposition of a cubic boron nitride film onto a conducting object.
- a gas mixture of N 2 with a flow of 90 seem (standard cubic centimeters per minute) , H 2 with a flow of 10 seem and F 6 with a flow of 5 seem are supplied in the process chamber at a pressure of
- a plasma is inductively gererated with a radiofrequency adjustable power, at 13,56 MHz of roughly 100 Watt which is supplied by the generator 9, whereby a power density of 500 mW/cm 2 is realized near the object by the power generator 13.
- the power generator 13 is required to
- the object O can be kept accurately within a temperature range of 200-500°C with the aid of the low frequency power generator.
- a temperature sensor not shown, is disposed within the reaction chamber and is
- the low frequency induction is not, or at any rate only in a small amount, influenced by the plasma present.
- the generated high frequency energy is virtually completely absorbed by the resulting plasma, and does not directly interact with the substrate.
- the plasma density can be very high, for example up to 10 12 per cm 2 ;
- the pressure range can be very wide, for instance from 10 "4 to 1 Torr; - a high level of three dimensional homogenity is achieved in the plasma;
- the substrate can be provided with an independant bias voltage which makes possible the control of the microstructure of the deposited layer; - by adjusting the frequencies, an easy scale-up or scale-down of the process chamber can be achieved;
- the heating can occur quickly due to the fact that the object is directly heated by so called eddy currents without entailing a large amount of thermal inertia;
- the temperature regulation of the object or the substrate can take place easily and accurately; - the fact that the wall remains cold, prevents wall deposition and avoid thus electrical screening of the applied inductive fields allowing metal deposition processes; - the apparatus can be kept compact, whilst at the same time many bias parameters, such as differing frequencies and temperatures, are possible; the production costs are expected to be low, the maintenance easy, and the operation is expected to be exceptional due to the simplicity and low break-down susceptibility.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method for processing a substrate of a certain material, wherein the material is inducted with heat by a relatively low frequency electrical current and wherein a relatively high frequency electrical current is used for further processing of said material. An apparatus for processing an object out of, or a certain amount of a certain material, wherein the device comprises: a reactor chamber (10) with an outer wall, which is at least partially made from non-conducting material; arranging means for arranging of the material in the reaction chamber; and an electric conductor (2), for generating an alternating electric field in the reactor, which is supplied next to the wall of the reactor.
Description
MULTI-FREQUENCY INDUCTIVE METHOD AND APPARATUS FOR THE PROCESSING OF MATERIAL
Chemical Vapour Deposition (CVD) is used on a large scale in industry for depositing layers of a certain material onto a substrate as general term, at typical temperatures of 800°C or more. By lower temperatures. Plasma Enhanced Chemical Vapour Deposition (PECVD) can be used. However this has the disadvantage that defects in uniformity can occur when depositing layers onto three dimensional objects. PECVD is thus mainly used for depositing layers onto flat surfaces. For applying thin films at low temperatures a so called Distributed Electronic Cyclotronic Resonnance Reactor (DECR) is also used for uniformity on 3- di ensions substrates. However DECR apparatus is complex and expensive for industrial applications, w"r .-1st at the same time the deposition rate is too low for most of the industrial applications.
The purpose of the present invention is to provide a method and apparatus wherein at relatively low temperatures, substantially under 800°C for the substrate, layers can be applied whilst achieving a high deposition rate, an excellent three dimensional uniformity and wherein the microstructure of the deposited layers can be accurately controlled and/or electrically conducting layers can be deposited.
Accordingly the present invention provides a method for the processing of a substrate of a certain material, wherein the material is heated by induction at relatively low frequency and wherein a relatively high frequency electrical current is used for further processing of said material. In this context the word substrate comprises any object of any shape of a certain material and also a certain quantity of bulk material.
Further the present invention provides an apparatus for processing a substrate, wherein the apparatus comprises:
- a reactor chamber with an outer wall, which is at least partially made from non-electrically conducting material; .
- arranging means for arranging of the substrate in the reaction chamber; and
- an electric conductor, for generating an alternating electric field in the reactor, which is provided adjacent to the wall of the reactor.
Further advantages, characteristics and details of the present invention will become clear with respects to the following description of a preferred embodiment thereof, and to the accompanying figure.
A preferred embodiment 10 of the apparatus according to the present invention for the carrying out of a preferred embodiment of the method according to the present invention, comprises a substantially cylindrical or tubelike reaction chamber 1, around which an electromagnetic winding 2 is arranged. An object O for instance made of metal, is suspended or otherwise arranged in the chamber. The object 0 can be made of conducting material. The wall 1 is built from electrically insulating material, for example alumina. Electrically conducting strips 5 are provided on or in the wall 1, the strips being preferably connected to ground. The electrically conducting strips 5 provide an uniform inductive electric field in the reaction chamber compensating for the limited length thereof. A reaction gas entry pipe 3, shown with an arrow, is disposed to a first side whilst on the opposite side a reaction gas exit pipe 4 is disposed.
A low frequency power generator 6 is provided between two filters 7 and 8 respectively in order to make possible inductive heating of the object O by the winding 2, low frequency here meaning a frequency smaller or equal to 10 kHz. Furthermore, a high frequency power generator 9 is arranged inbetween two filters 11 and 12 and connected to
the electromagnetic winding 2 for the generation of electromagnetic power, for. example at a frequency of 13,56 MHz or more, which frequencies are used for plasma generation as is necessary for PECVD processing of the 5 object 0. The low frequency power generator 6 can, for example, supply a power of around 20 k atts, whilst the high frequency power generator can supply, for instance, an operating power of around 5 kWatts. The object O is connected to a high frequency power bias generator 13, so
10 that suitable operation for the accurate control of ion energy impinging on the surface of the object can occur. The bias generator 13 can be phase locked with the high frequency generator 9.
A first example of the method according to the
15 present invention concerns the deposition of a cubic boron nitride film onto a conducting object. A gas mixture of N2 with a flow of 90 seem (standard cubic centimeters per minute) , H2 with a flow of 10 seem and F6 with a flow of 5 seem are supplied in the process chamber at a pressure of
20 800 Pascal. A plasma is inductively gererated with a radiofrequency adjustable power, at 13,56 MHz of roughly 100 Watt which is supplied by the generator 9, whereby a power density of 500 mW/cm2 is realized near the object by the power generator 13. The power generator 13 is required to
"5 control the bias voltage to the object for instance to a few hundreds of volts. The object O can be kept accurately within a temperature range of 200-500°C with the aid of the low frequency power generator. A temperature sensor, not shown, is disposed within the reaction chamber and is
30 coupled to a control, not shown, which controls power from the low frequency generator 6.
A second preferred embodiment of the method according to the present invention concerns the deposition of a diamond like coating onto an electrically conducting
35 object with a total gas flow of 80 seem, wherein ,;ιe gas flow is substantially H2 comprising 7 mol.% CO and 2,2 mol.% 02 at a pressure of 250 Pascal. The high frequency generator 9 generates the plasma at an adjustable power level of a few
hundreds Watts. The power generator 13 will be used to adjust the bias of the object 0. With this process, the temperature is preferably kept in the range of 400-750°C by accurate inductive heating ensured by the low-frequency power generator 6. In this second embodiment a reactor using inductive coupling is provided wherein the voltages across the plasma are low and therefore the ions have low energy.
The low frequency induction is not, or at any rate only in a small amount, influenced by the plasma present. The generated high frequency energy is virtually completely absorbed by the resulting plasma, and does not directly interact with the substrate.
The above described embodiments of the present invention provide a great number of advantages of which an important number, are the following:
- the plasma density can be very high, for example up to 1012 per cm2;
- the pressure range can be very wide, for instance from 10"4 to 1 Torr; - a high level of three dimensional homogenity is achieved in the plasma;
- the substrate, can be provided with an independant bias voltage which makes possible the control of the microstructure of the deposited layer; - by adjusting the frequencies, an easy scale-up or scale-down of the process chamber can be achieved;
- reactor wall sputtering is prevented due to the very low ion energies which therefore ensures a clean technology; - the heating efficiency can be large due to the fact that not much energy loss occurs during heating;
- the heating can occur quickly due to the fact that the object is directly heated by so called eddy currents without entailing a large amount of thermal inertia;
- the temperature regulation of the object or the substrate, can take place easily and accurately;
- the fact that the wall remains cold, prevents wall deposition and avoid thus electrical screening of the applied inductive fields allowing metal deposition processes; - the apparatus can be kept compact, whilst at the same time many bias parameters, such as differing frequencies and temperatures, are possible; the production costs are expected to be low, the maintenance easy, and the operation is expected to be exceptional due to the simplicity and low break-down susceptibility.
The requested rights are in no way limited by the hereabove described preferred embodiments of the invention, but are rather defined by the following claims. In that respect it will be especially noted by one skilled in the art that an intended non limiting variation with respects to the embodiments is concerned with allowing transfer of low frequency and high frequency electromagnetic power respectively, by means of separate coil windings, as well as other processes than PECVD being possible with the apparatus and method according to the present invention.
There are for example lots of promising applications in the field of metallurgy, where the multi- frequency induction can be used to achieve process performance out of reach by any other means.
Claims
1. A method for processing a substrate of a certain material, wherein the material is inducted with heat by a relatively low frequency electrical current and wherein a relatively high frequency electrical current is used for further processing of said material.
2. A method according to claim 1, wherein the relatively high frequency is capable of generating plasma from a supplied gas and wherein the processing is PECVD.
3. A method according to claims 1 or 2, wherein the object is an electrically conducting object that is for instance made of metal.
4. A method according to claims 1, 2 or 3, wherein a gas mixture of N2, H2 and WF6 is supplied into the reaction chamber.
5. An apparatus according to claims 1, 2 or 3, wherein a gas mixture comprising H2, CO and 02 is supplied to the reactor.
6. An apparatus for processing an object out of, or a certain amount of a certain material, wherein the device comprises:
- a reactor chamber with an outer wall, which is at least partially made from non-conducting material;
- arranging means for arranging of the material in the reaction chamber; and - an electric conductor, for generating an alternating electric field in the reactor, which is supplied next to the wall of the reactor.
7. An apparatus according to claim 6, wherein the reaction chamber is provided with one or more gas entries and one or more gas exits.
8. An apparatus according to claim 6 or 7, wherein strips of electrically conductive material are provided in, near or on the outer wall.
9. An apparatus according to any of the claims 6, 7 or 8, provided with a generator for building up a bias voltage to the object to be arranged in the reaction chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU24474/95A AU2447495A (en) | 1994-04-26 | 1995-04-20 | Multi-frequency inductive method and apparatus for the processing of material |
| EP95918586A EP0758409A1 (en) | 1994-04-26 | 1995-04-20 | Multi-frequency inductive method and apparatus for the processing of material |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BE9400433 | 1994-04-26 | ||
| BE9400433A BE1008338A5 (en) | 1994-04-26 | 1994-04-26 | Multi-frequency inductive method and device for working material. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1995029273A1 true WO1995029273A1 (en) | 1995-11-02 |
Family
ID=3888123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP1995/001522 WO1995029273A1 (en) | 1994-04-26 | 1995-04-20 | Multi-frequency inductive method and apparatus for the processing of material |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0758409A1 (en) |
| AU (1) | AU2447495A (en) |
| BE (1) | BE1008338A5 (en) |
| WO (1) | WO1995029273A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19900179C1 (en) * | 1999-01-07 | 2000-02-24 | Bosch Gmbh Robert | Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another |
| DE19923018A1 (en) * | 1999-05-19 | 2000-11-30 | Univ Dresden Tech | Plasma treatment apparatus, for strip materials or linked individual flat substrates, comprises a screened rectangular passage with a wound internal conductor enclosing a moving workpiece |
| US7273655B2 (en) | 1999-04-09 | 2007-09-25 | Shojiro Miyake | Slidably movable member and method of producing same |
| CN100366788C (en) * | 2004-09-09 | 2008-02-06 | 复旦大学 | Vacuum thermal evaporation film-forming method using strong electric field |
| US7771821B2 (en) | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
| US8096205B2 (en) | 2003-07-31 | 2012-01-17 | Nissan Motor Co., Ltd. | Gear |
| US8152377B2 (en) | 2002-11-06 | 2012-04-10 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2793140A (en) * | 1953-10-20 | 1957-05-21 | Ohio Commw Eng Co | Method of gas plating with a chromium compound and products of the method |
| JPS5633839A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Plasma treatment and device therefor |
| US4388344A (en) * | 1981-08-31 | 1983-06-14 | United Technolgies Corporation | Method of repairing surface defects in coated laser mirrors |
| US4664747A (en) * | 1985-03-28 | 1987-05-12 | Anelva Corporation | Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same |
| JPS62188783A (en) * | 1986-02-14 | 1987-08-18 | Sanyo Electric Co Ltd | Production of electrostatic latent image carrier |
| JPS63317676A (en) * | 1987-06-19 | 1988-12-26 | Sharp Corp | Production of thin metallic compound film having non-grained structure |
| EP0457076A2 (en) * | 1990-04-26 | 1991-11-21 | Hitachi, Ltd. | Method for producing synthetic diamond thin film, the thin film and device using it |
-
1994
- 1994-04-26 BE BE9400433A patent/BE1008338A5/en not_active IP Right Cessation
-
1995
- 1995-04-20 AU AU24474/95A patent/AU2447495A/en not_active Abandoned
- 1995-04-20 WO PCT/EP1995/001522 patent/WO1995029273A1/en not_active Application Discontinuation
- 1995-04-20 EP EP95918586A patent/EP0758409A1/en not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2793140A (en) * | 1953-10-20 | 1957-05-21 | Ohio Commw Eng Co | Method of gas plating with a chromium compound and products of the method |
| JPS5633839A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Plasma treatment and device therefor |
| US4388344A (en) * | 1981-08-31 | 1983-06-14 | United Technolgies Corporation | Method of repairing surface defects in coated laser mirrors |
| US4664747A (en) * | 1985-03-28 | 1987-05-12 | Anelva Corporation | Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same |
| JPS62188783A (en) * | 1986-02-14 | 1987-08-18 | Sanyo Electric Co Ltd | Production of electrostatic latent image carrier |
| JPS63317676A (en) * | 1987-06-19 | 1988-12-26 | Sharp Corp | Production of thin metallic compound film having non-grained structure |
| EP0457076A2 (en) * | 1990-04-26 | 1991-11-21 | Hitachi, Ltd. | Method for producing synthetic diamond thin film, the thin film and device using it |
Non-Patent Citations (5)
| Title |
|---|
| DATABASE WPI Section Ch Week 8738, Derwent World Patents Index; Class G08, AN 87-268976 * |
| KUWANO Y: "Some properties of silicon nitride films produced by radio frequency glow discharge reaction of silane and nitrogen", JAPANESE JOURNAL OF APPLIED PHYSICS, JULY 1969, JAPAN, VOL. 8, NR. 7, PAGE(S) 876 - 882, ISSN 0021-4922 * |
| OLCAYTUG F ET AL: "A low temperature process for the reactive formation of Si/sub 3/N/sub 4/ layers on InSb", THIN SOLID FILMS, 15 APRIL 1980, SWITZERLAND, VOL. 67, NR. 2, PAGE(S) 321 - 324, ISSN 0040-6090 * |
| PATENT ABSTRACTS OF JAPAN vol. 005, no. 086 (E - 060) 5 June 1981 (1981-06-05) * |
| PATENT ABSTRACTS OF JAPAN vol. 013, no. 169 (C - 587) 21 April 1989 (1989-04-21) * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19900179C1 (en) * | 1999-01-07 | 2000-02-24 | Bosch Gmbh Robert | Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another |
| US7273655B2 (en) | 1999-04-09 | 2007-09-25 | Shojiro Miyake | Slidably movable member and method of producing same |
| DE19923018A1 (en) * | 1999-05-19 | 2000-11-30 | Univ Dresden Tech | Plasma treatment apparatus, for strip materials or linked individual flat substrates, comprises a screened rectangular passage with a wound internal conductor enclosing a moving workpiece |
| DE19923018C2 (en) * | 1999-05-19 | 2001-09-27 | Univ Dresden Tech | Device for processing band-shaped workpieces using resonant high-frequency plasmas |
| US8152377B2 (en) | 2002-11-06 | 2012-04-10 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
| US8096205B2 (en) | 2003-07-31 | 2012-01-17 | Nissan Motor Co., Ltd. | Gear |
| US7771821B2 (en) | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
| CN100366788C (en) * | 2004-09-09 | 2008-02-06 | 复旦大学 | Vacuum thermal evaporation film-forming method using strong electric field |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2447495A (en) | 1995-11-16 |
| EP0758409A1 (en) | 1997-02-19 |
| BE1008338A5 (en) | 1996-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5079031A (en) | Apparatus and method for forming thin films | |
| KR101410515B1 (en) | Surface processing apparatus | |
| US4971667A (en) | Plasma processing method and apparatus | |
| US5439715A (en) | Process and apparatus for microwave plasma chemical vapor deposition | |
| TWI228152B (en) | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition | |
| TW509982B (en) | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source | |
| US6652717B1 (en) | Use of variable impedance to control coil sputter distribution | |
| EP0284190A2 (en) | Enhanced CVD method for deposition of carbon | |
| US5540781A (en) | Plasma CVD process using a very-high-frequency and plasma CVD apparatus | |
| KR100388530B1 (en) | Rf powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition | |
| KR20180025890A (en) | Apparatus for the treatment of web substrates in plasma enhanced processing | |
| US5283087A (en) | Plasma processing method and apparatus | |
| US5120625A (en) | Carbon material containing a halogen and deposition method for same | |
| WO1995029273A1 (en) | Multi-frequency inductive method and apparatus for the processing of material | |
| RU2189663C2 (en) | Method and device for producing thin semiconductor film | |
| WO1995015672A1 (en) | Method and apparatus for planar plasma processing | |
| JP5274659B2 (en) | Method and apparatus for simultaneously depositing films on both sides of a support | |
| JP4471589B2 (en) | Antenna device for plasma generation and plasma processing apparatus | |
| US4320716A (en) | Ultra-high frequency device for depositing thin films on solids | |
| JP2005149887A (en) | Matching method of antenna for plasma generator, and plasma generator | |
| US5007374A (en) | Apparatus for forming thin films in quantity | |
| JP4818483B2 (en) | Thin film forming equipment | |
| JPH04183871A (en) | Device for forming built-up film due to microwave plasma cvd method | |
| JP4022670B2 (en) | Electrode for generating ultrahigh frequency plasma, plasma surface treatment apparatus and plasma surface treatment method comprising the electrode | |
| JP3513206B2 (en) | Method and apparatus for forming deposited film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AM AT AU BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU JP KE KG KP KR KZ LK LR LT LU LV MD MG MN MW MX NO NZ PL PT RO RU SD SE SI SK TJ TT UA US UZ VN |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): KE MW SD SZ UG AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 1995918586 Country of ref document: EP |
|
| ENP | Entry into the national phase |
Ref country code: US Ref document number: 1997 727484 Date of ref document: 19970116 Kind code of ref document: A Format of ref document f/p: F |
|
| WWP | Wipo information: published in national office |
Ref document number: 1995918586 Country of ref document: EP |
|
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| WWW | Wipo information: withdrawn in national office |
Ref document number: 1995918586 Country of ref document: EP |
|
| NENP | Non-entry into the national phase |
Ref country code: CA |