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USB561405I5 - - Google Patents

Info

Publication number
USB561405I5
USB561405I5 US56140575A USB561405I5 US B561405 I5 USB561405 I5 US B561405I5 US 56140575 A US56140575 A US 56140575A US B561405 I5 USB561405 I5 US B561405I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US05/561,405 priority Critical patent/US4003770A/en
Publication of USB561405I5 publication Critical patent/USB561405I5/en
Application granted granted Critical
Publication of US4003770A publication Critical patent/US4003770A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H01L31/068—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L31/03682—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
US05/561,405 1975-03-24 1975-03-24 Plasma spraying process for preparing polycrystalline solar cells Expired - Lifetime US4003770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/561,405 US4003770A (en) 1975-03-24 1975-03-24 Plasma spraying process for preparing polycrystalline solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/561,405 US4003770A (en) 1975-03-24 1975-03-24 Plasma spraying process for preparing polycrystalline solar cells

Publications (2)

Publication Number Publication Date
USB561405I5 true USB561405I5 (de) 1976-03-30
US4003770A US4003770A (en) 1977-01-18

Family

ID=24241824

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/561,405 Expired - Lifetime US4003770A (en) 1975-03-24 1975-03-24 Plasma spraying process for preparing polycrystalline solar cells

Country Status (1)

Country Link
US (1) US4003770A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186800A2 (de) * 1984-12-19 1986-07-09 SIGRI GmbH Verfahren zum Beschichten von Kohlenstoff- und Graphitkörpern
DE4309319A1 (de) * 1992-09-08 1994-03-10 Mitsubishi Electric Corp Dünnschichtsolarzelle und Herstellungsverfahren dazu, Verfahren zur Herstellung eines Halbleiterrohlings und Verfahren zur Herstellung eines Halbleitersubstrates

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
US4101923A (en) * 1977-03-22 1978-07-18 Gulko Arnold G Solar cells
US4165558A (en) * 1977-11-21 1979-08-28 Armitage William F Jr Fabrication of photovoltaic devices by solid phase epitaxy
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
US4200472A (en) * 1978-06-05 1980-04-29 The Regents Of The University Of California Solar power system and high efficiency photovoltaic cells used therein
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4187126A (en) * 1978-07-28 1980-02-05 Conoco, Inc. Growth-orientation of crystals by raster scanning electron beam
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
US4240842A (en) * 1979-03-28 1980-12-23 Solarex Corporation Solar cell having contacts and antireflective coating
US4331703A (en) * 1979-03-28 1982-05-25 Solarex Corporation Method of forming solar cell having contacts and antireflective coating
DE2941908C2 (de) * 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
DE3000802A1 (de) * 1980-01-11 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung vn silizium
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
US4292342A (en) * 1980-05-09 1981-09-29 Motorola, Inc. High pressure plasma deposition of silicon
US4379020A (en) * 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
US4320251A (en) * 1980-07-28 1982-03-16 Solamat Inc. Ohmic contacts for solar cells by arc plasma spraying
USRE34806E (en) * 1980-11-25 1994-12-13 Celestech, Inc. Magnetoplasmadynamic processor, applications thereof and methods
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4682564A (en) * 1980-11-25 1987-07-28 Cann Gordon L Magnetoplasmadynamic processor, applications thereof and methods
US4382099A (en) * 1981-10-26 1983-05-03 Motorola, Inc. Dopant predeposition from high pressure plasma source
US4505947A (en) * 1982-07-14 1985-03-19 The Standard Oil Company (Ohio) Method for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma
IN160089B (de) * 1982-07-14 1987-06-27 Standard Oil Co Ohio
JP2995236B2 (ja) * 1990-08-10 1999-12-27 株式会社ナカシマ ガラス表面を有する金属ロール材の製造方法
US5075257A (en) * 1990-11-09 1991-12-24 The Board Of Trustees Of The University Of Arkansas Aerosol deposition and film formation of silicon
JPH11260721A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 多結晶薄膜シリコン層の形成方法および太陽光発電素子
US6258417B1 (en) 1998-11-24 2001-07-10 Research Foundation Of State University Of New York Method of producing nanocomposite coatings
US6689453B2 (en) 1998-11-24 2004-02-10 Research Foundation Of State University Of New York Articles with nanocomposite coatings
US6620645B2 (en) 2000-11-16 2003-09-16 G.T. Equipment Technologies, Inc Making and connecting bus bars on solar cells
US6581415B2 (en) 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
US6841006B2 (en) * 2001-08-23 2005-01-11 Applied Materials, Inc. Atmospheric substrate processing apparatus for depositing multiple layers on a substrate
US6635307B2 (en) 2001-12-12 2003-10-21 Nanotek Instruments, Inc. Manufacturing method for thin-film solar cells
GB0225202D0 (en) * 2002-10-30 2002-12-11 Hewlett Packard Co Electronic components
US7074693B2 (en) * 2003-06-24 2006-07-11 Integrated Materials, Inc. Plasma spraying for joining silicon parts
US7757631B2 (en) * 2004-05-26 2010-07-20 Hewlett-Packard Development Company, L.P. Apparatus for forming a circuit
EP1910246B1 (de) * 2005-08-02 2011-11-02 MOGILEVSKY, Radion Verfahren zur herstellung dichter blöcke
WO2008010814A2 (en) * 2005-08-05 2008-01-24 Kahrl Retti Multiple layer solar energy harvesting composition and method
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
US20080023070A1 (en) * 2006-07-28 2008-01-31 Sanjai Sinha Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
US20080220558A1 (en) * 2007-03-08 2008-09-11 Integrated Photovoltaics, Inc. Plasma spraying for semiconductor grade silicon
US20080295885A1 (en) * 2007-05-30 2008-12-04 Shing Man Lee Thick Crystalline Silicon Film On Large Substrates for Solar Applications
DE102007029576A1 (de) 2007-06-26 2009-01-08 Evonik Degussa Gmbh Verfahren zur Herstellung von folienartigen Halbleiterwerkstoffen und/oder elektronischen Elementen durch Urformen und/oder Beschichtung
KR100855540B1 (ko) * 2007-07-10 2008-09-01 주식회사 코미코 이온 주입 장치, 이온 주입 장치의 내부 구조물 및 상기이온 주입 장치의 코팅층 형성 방법
US8253058B2 (en) * 2009-03-19 2012-08-28 Integrated Photovoltaics, Incorporated Hybrid nozzle for plasma spraying silicon
US8110419B2 (en) 2009-08-20 2012-02-07 Integrated Photovoltaic, Inc. Process of manufacturing photovoltaic device
US8476660B2 (en) * 2009-08-20 2013-07-02 Integrated Photovoltaics, Inc. Photovoltaic cell on substrate
US20130125983A1 (en) * 2011-11-18 2013-05-23 Integrated Photovoltaic, Inc. Imprinted Dielectric Structures
DE102011088541A1 (de) 2011-12-14 2013-06-20 Robert Bosch Gmbh Verfahren und Anordnung zur Herstellung einer Solarzelle
TWI501292B (zh) 2012-09-26 2015-09-21 Ind Tech Res Inst 形成圖案化摻雜區的方法
CN105671474B (zh) * 2016-03-18 2018-11-30 李光武 制造半导体基片的方法和装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537255A (en) * 1946-03-20 1951-01-09 Bell Telephone Labor Inc Light-sensitive electric device
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US3010009A (en) * 1958-09-29 1961-11-21 Plasmadyne Corp Method and apparatus for uniting materials in a controlled medium
US3078328A (en) * 1959-11-12 1963-02-19 Texas Instruments Inc Solar cell
US3160522A (en) * 1960-11-30 1964-12-08 Siemens Ag Method for producting monocrystalline semiconductor layers
US3274007A (en) * 1963-08-01 1966-09-20 Lockheed Aircraft Corp High-temperature resistant self-healing coating and method of application
US3460240A (en) * 1965-08-24 1969-08-12 Westinghouse Electric Corp Manufacture of semiconductor solar cells
US3485666A (en) * 1964-05-08 1969-12-23 Int Standard Electric Corp Method of forming a silicon nitride coating
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537255A (en) * 1946-03-20 1951-01-09 Bell Telephone Labor Inc Light-sensitive electric device
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US3010009A (en) * 1958-09-29 1961-11-21 Plasmadyne Corp Method and apparatus for uniting materials in a controlled medium
US3078328A (en) * 1959-11-12 1963-02-19 Texas Instruments Inc Solar cell
US3160522A (en) * 1960-11-30 1964-12-08 Siemens Ag Method for producting monocrystalline semiconductor layers
US3274007A (en) * 1963-08-01 1966-09-20 Lockheed Aircraft Corp High-temperature resistant self-healing coating and method of application
US3485666A (en) * 1964-05-08 1969-12-23 Int Standard Electric Corp Method of forming a silicon nitride coating
US3460240A (en) * 1965-08-24 1969-08-12 Westinghouse Electric Corp Manufacture of semiconductor solar cells
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186800A2 (de) * 1984-12-19 1986-07-09 SIGRI GmbH Verfahren zum Beschichten von Kohlenstoff- und Graphitkörpern
EP0186800A3 (en) * 1984-12-19 1987-08-26 Sigri Gmbh Process for coating carbon and graphite bodies
DE4309319A1 (de) * 1992-09-08 1994-03-10 Mitsubishi Electric Corp Dünnschichtsolarzelle und Herstellungsverfahren dazu, Verfahren zur Herstellung eines Halbleiterrohlings und Verfahren zur Herstellung eines Halbleitersubstrates

Also Published As

Publication number Publication date
US4003770A (en) 1977-01-18

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