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US9537058B2 - Embedded white light LED package structure based on solid-state fluorescence material and manufacturing method thereof - Google Patents

Embedded white light LED package structure based on solid-state fluorescence material and manufacturing method thereof Download PDF

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US9537058B2
US9537058B2 US14/761,954 US201414761954A US9537058B2 US 9537058 B2 US9537058 B2 US 9537058B2 US 201414761954 A US201414761954 A US 201414761954A US 9537058 B2 US9537058 B2 US 9537058B2
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solid
fluorescence material
state fluorescence
package structure
led package
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US20160268482A1 (en
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Yueshan Liang
Dunhua Cao
Kejun Ma
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Shanghai Fudi Lighting Electronic Co Ltd
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Shanghai Fudi Lighting Electronic Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • the present invention relates to the field of LED lighting technologies, and in particular, to an embedded white light LED package structure based on a solid-state fluorescence material and a manufacturing method thereof.
  • white light LED is a solid-state semiconductor device, and can directly convert electrical energy into light energy. Compared with a traditional incandescent lamp and fluorescent lamp, white light LED has advantages such as low power consumption, high lighting efficiency, a long service life, and energy conservation and environmental protection; therefore, white light LED is not only widely used in the daily lighting field, but also enters the display device field.
  • technologies for acquiring white light LED may be classified into two types, namely: (1) blending three types of LED chips emitting red, green, and blue rays of light; (2) exciting a proper fluorescence material by using a single-color (blue light or ultraviolet light) LED chip.
  • white light LED mainly obtains white light by combining a blue light LED chip and fluorescent powder that can be effectively excited by blue light and emits yellow light, and then blending the complementary yellow light and blue light by using the principle of lenses.
  • traditional fluorescent powder is characterized by low excitation efficiency and optical conversion efficiency, poor uniformity, and the like.
  • epoxy resin or silica gel blended with fluorescent powder easily ages at a high temperature, which reduces a transmittance, and finally seriously affects light extraction efficiency of a white light device.
  • a package stand needs to be used in an existing LED package structure, and the blue light easily leaks. Moreover, a process is complex, cost is high, and heat dissipation performance is poor.
  • the present invention provides an embedded white light LED package structure based on a solid-state fluorescence material and a manufacturing method thereof.
  • Technical problems to be solved by the present invention are that an existing LED package structure has a complex process, high cost, and poor heat dissipation performance; and blue light easily leaks.
  • a technical solution of the present invention is an embedded white light LED package structure based on a solid-state fluorescence material, including a blue light chip and a Ce:YAG solid-state fluorescence material, wherein a groove matching the blue light chip is disposed on the Ce:YAG solid-state fluorescence material, and the blue light chip is embedded into the groove.
  • a light reflecting film is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material.
  • the embedded white light LED package structure based on a solid-state fluorescence material further includes a heat conducting substrate, wherein the heat conducting substrate is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material.
  • the embedded white light LED package structure is an embedded white light LED package structure with a solid-state fluorescence material having the light reflecting film disposed therein, the heat conducting substrate is disposed behind the light reflecting film.
  • a red light film is disposed on a light extraction surface of the Ce:YAG solid-state fluorescence material, and the red light film is capable of converting partial blue light into red light having a light emission band being 580 nm to 660 nm.
  • the Ce:YAG solid-state fluorescence material is any one of Ce:YAG fluorescent single crystal, Ce:YAG fluorescent polycrystal, Ce:YAG fluorescent ceramic, or Ce:YAG fluorescent glass.
  • a chemical formula of a main constituent of the Ce:YAG solid-state fluorescence material is (Y 1-x-m A x Ce m ) 3 (Al 1-y B y ) 5 O 12 , wherein 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ m ⁇ 0.05; A is one of Lu, Tb, Pr, La, and Gd; and B is one of Ga, Ti, Mn, Cr, and Zr.
  • the blue light chip is GaN-based blue light chip.
  • the present invention further discloses a manufacturing method of an embedded white light LED package structure based on a solid-state fluorescence material, including the following steps:
  • step B cutting and polishing the Ce:YAG solid-state fluorescence material manufactured in step A, to obtain a solid-state fluorescence piece having a needed size;
  • step D the method further includes the following steps:
  • the present invention provides an embedded white light LED package structure based on a solid-state fluorescence material and a manufacturing method thereof.
  • a high power blue light chip is directly embedded into and bonded with a groove of the solid-state fluorescence material, and blue light emitted by the chip and yellow and green light obtained by conversion and emitted by the solid-state fluorescence material are blended by using the principle of lenses, to obtain white light.
  • the embedded white light LED package structure based on a solid-state fluorescence material has a simple process, low cost, and high fluorescence efficiency; and blue light does not leak. Heat dissipation can be directly performed by using the solid-state fluorescence material, and heat dissipation performance is desirable.
  • FIG. 1 is a schematic structural diagram of Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of Embodiment 2 of the present invention.
  • FIG. 3 is a schematic structural diagram of Embodiment 3 of the present invention.
  • FIG. 4 is a schematic structural diagram of Embodiment 4 of the present invention.
  • FIG. 1 An embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 1 .
  • step (4) finally fastening the embedded surface of the blue light chip of an entire device obtained in step (4) to a heat conducting substrate 4 , to form an entire white light LED package structure.
  • the embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 2 .
  • FIG. 3 An embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 3 .
  • FIG. 4 An embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 4 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

The present invention discloses an embedded white light LED package structure based on a solid-state fluorescence material. In the present invention, the high power blue light chip is directly embedded into and bonded with a groove of the solid-state fluorescence material, and blue light emitted by the chip and yellow and green light obtained by conversion and emitted by the solid-state fluorescence material are blended by using the principle of lenses, to obtain white light. The embedded white light LED package structure based on a solid-state fluorescence material has a simple process, low cost, and high fluorescence efficiency; and blue light does not leak. Heat dissipation can be directly performed by using the solid-state fluorescence material, and heat dissipation performance is desirable. Energy conservation and environmental protection is achieved, and a service life of an LED lighting device is greatly improved.

Description

BACKGROUND
Technical Field
The present invention relates to the field of LED lighting technologies, and in particular, to an embedded white light LED package structure based on a solid-state fluorescence material and a manufacturing method thereof.
Related Art
LED is a solid-state semiconductor device, and can directly convert electrical energy into light energy. Compared with a traditional incandescent lamp and fluorescent lamp, white light LED has advantages such as low power consumption, high lighting efficiency, a long service life, and energy conservation and environmental protection; therefore, white light LED is not only widely used in the daily lighting field, but also enters the display device field. Currently, technologies for acquiring white light LED may be classified into two types, namely: (1) blending three types of LED chips emitting red, green, and blue rays of light; (2) exciting a proper fluorescence material by using a single-color (blue light or ultraviolet light) LED chip. Currently, white light LED mainly obtains white light by combining a blue light LED chip and fluorescent powder that can be effectively excited by blue light and emits yellow light, and then blending the complementary yellow light and blue light by using the principle of lenses. However, traditional fluorescent powder is characterized by low excitation efficiency and optical conversion efficiency, poor uniformity, and the like. In particular, in the high power lighting field, because epoxy resin or silica gel blended with fluorescent powder easily ages at a high temperature, which reduces a transmittance, and finally seriously affects light extraction efficiency of a white light device.
In addition, a package stand needs to be used in an existing LED package structure, and the blue light easily leaks. Moreover, a process is complex, cost is high, and heat dissipation performance is poor.
SUMMARY
To solve the foregoing problems, the present invention provides an embedded white light LED package structure based on a solid-state fluorescence material and a manufacturing method thereof. Technical problems to be solved by the present invention are that an existing LED package structure has a complex process, high cost, and poor heat dissipation performance; and blue light easily leaks. To achieve the foregoing technical objective, a technical solution of the present invention is an embedded white light LED package structure based on a solid-state fluorescence material, including a blue light chip and a Ce:YAG solid-state fluorescence material, wherein a groove matching the blue light chip is disposed on the Ce:YAG solid-state fluorescence material, and the blue light chip is embedded into the groove.
In the foregoing solution, a light reflecting film is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material.
In the foregoing solution, the embedded white light LED package structure based on a solid-state fluorescence material further includes a heat conducting substrate, wherein the heat conducting substrate is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material.
In the foregoing solution, if the embedded white light LED package structure is an embedded white light LED package structure with a solid-state fluorescence material having the light reflecting film disposed therein, the heat conducting substrate is disposed behind the light reflecting film.
In the foregoing solution, a red light film is disposed on a light extraction surface of the Ce:YAG solid-state fluorescence material, and the red light film is capable of converting partial blue light into red light having a light emission band being 580 nm to 660 nm.
In the foregoing solution, the Ce:YAG solid-state fluorescence material is any one of Ce:YAG fluorescent single crystal, Ce:YAG fluorescent polycrystal, Ce:YAG fluorescent ceramic, or Ce:YAG fluorescent glass.
In the foregoing solution, a chemical formula of a main constituent of the Ce:YAG solid-state fluorescence material is (Y1-x-mAxCem)3(Al1-yBy)5O12, wherein 0≦x≦1, 0≦y≦1, and 0≦m≦0.05; A is one of Lu, Tb, Pr, La, and Gd; and B is one of Ga, Ti, Mn, Cr, and Zr.
In the foregoing solution, the blue light chip is GaN-based blue light chip.
The present invention further discloses a manufacturing method of an embedded white light LED package structure based on a solid-state fluorescence material, including the following steps:
A. manufacturing a Ce:YAG solid-state fluorescence material;
B: cutting and polishing the Ce:YAG solid-state fluorescence material manufactured in step A, to obtain a solid-state fluorescence piece having a needed size;
C: etching grooves on the solid-state fluorescence piece, and the size of the groove matches the corresponding blue light chip; and
D. embedding the blue light chip into the groove of the solid-state fluorescence piece, and installing an electrode, to form the entire package structure.
In the foregoing solution, after step D, the method further includes the following steps:
E. adding a light reflecting film to an end surface of the blue light chip of the package structure;
F. fastening an end surface of the light reflecting film of the package structure to a heat conducting substrate; and
G. adding a red light film to the surface of the solid-state fluorescence piece.
Advantages and beneficial effects of the present invention are as follows: The present invention provides an embedded white light LED package structure based on a solid-state fluorescence material and a manufacturing method thereof. A high power blue light chip is directly embedded into and bonded with a groove of the solid-state fluorescence material, and blue light emitted by the chip and yellow and green light obtained by conversion and emitted by the solid-state fluorescence material are blended by using the principle of lenses, to obtain white light. The embedded white light LED package structure based on a solid-state fluorescence material has a simple process, low cost, and high fluorescence efficiency; and blue light does not leak. Heat dissipation can be directly performed by using the solid-state fluorescence material, and heat dissipation performance is desirable.
Energy conservation and environmental protection is achieved, and a service life of an LED lighting device is greatly improved.
BRIEF DESCRIPTION OF THE DRAWINGS
To illustrate the technical solutions in the embodiments of the present invention or in the prior art more clearly, the following briefly introduces the accompanying drawings required for describing the embodiments or the prior art. Apparently, the accompanying drawings in the following description show merely some embodiments of the present invention, and a person of ordinary skill in the art may still derive other drawings from these accompanying drawings without creative efforts.
FIG. 1 is a schematic structural diagram of Embodiment 1 of the present invention;
FIG. 2 is a schematic structural diagram of Embodiment 2 of the present invention;
FIG. 3 is a schematic structural diagram of Embodiment 3 of the present invention; and
FIG. 4 is a schematic structural diagram of Embodiment 4 of the present invention.
In the figures: 1. Blue light chip, 2. Solid-state fluorescence piece, 3. Electrode, 4. Heat conducting substrate; and
5. Red light film, 6. Light reflecting film, and 7. Groove
DETAILED DESCRIPTION
Specific implementation manners of the present invention are further described with reference to the accompanying drawings and embodiments. The following embodiments are merely intended to describe the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereto.
Embodiment 1
(1) growing Ce:YAG crystals by using a Kyropoulos method;
(2) cutting and polishing the Ce:YAG crystals obtained in step (1), to obtain fluorescence crystal pieces 2 having size being 10*10 millimeters and thickness being 0.5 millimeter;
(3) etching grooves 7 matching the size of blue light chips 1 on the fluorescence crystal piece 2; and
(4) placing the blue light chips 1 into the grooves 7 of the fluorescence crystal piece, sequentially connecting blue light chips in series, and finally installing electrodes 3.
An embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 1.
Embodiment 2
(1) growing Ce:YAG crystals by using a Czochralski method;
(2) cutting and polishing the Ce:YAG crystals obtained in step (1), to obtain fluorescence crystal pieces 2 having size being 6*6 millimeters and thickness being 0.6 millimeter;
(3) etching grooves 7 matching the size of blue light chips 1 on the fluorescence crystal piece 2;
(4) placing the blue light chips 1 into the grooves 7 of the fluorescence crystal piece 2, sequentially connecting blue light chips in series, and installing electrodes 3; and
(5) finally fastening the embedded surface of the blue light chip of an entire device obtained in step (4) to a heat conducting substrate 4, to form an entire white light LED package structure.
The embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 2.
Embodiment 3
(1) growing Ce:YAG crystals by using a temperature gradient method;
(2) cutting and polishing the Ce:YAG crystals obtained in step (1), to obtain fluorescence crystal pieces 2 having size being 5*5 millimeters and thickness being 0.6 millimeter;
(3) etching grooves 7 matching the size of the blue light chips 1 on the fluorescence crystal piece 2;
(4) placing the blue light chips 1 into the grooves 7 of the fluorescence crystal piece 2, sequentially connecting blue light chips in series, and installing electrodes 3;
(5) finally fastening an embedded surface of the blue light chip of the fluorescence crystal piece to a heat conducting substrate 4, to form an entire white light LED package structure; and
(6) adding a red light film 5 to a light extraction surface of the fluorescence crystal piece 2, to adjust light emission performance of a device.
An embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 3.
Embodiment 4
(1) growing Ce:YAG crystals by using a Czochralski method;
(2) cutting and polishing the Ce:YAG crystals obtained in step (1), to obtain fluorescence crystal pieces 2 having size being 5*5 millimeters and thickness being 0.6 millimeter;
(3) etching grooves 7 matching the size of the blue light chips 1 on the fluorescence crystal piece 2;
(4) placing the blue light chips 1 into the grooves 7 of the fluorescence crystal piece 2, sequentially connecting blue light chips in series, and installing an electrode 3;
(5) adding a light reflecting film 6 to an embedded surface of the blue light chip of the fluorescence crystal piece, to adjust an overall lighting effect of a device; and
(6) finally fastening a surface of the light reflecting film of the device to a heat conducting substrate 4, to form an entire white light LED package structure.
An embedded white light LED package structure based on a solid-state fluorescence material that is obtained is shown in FIG. 4.
The foregoing description shows merely preferred embodiments of the present invention, and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, and the like made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (10)

What is claimed is:
1. An embedded white light LED package structure based on a solid-state fluorescence material, comprising a blue light chip and a Ce:YAG solid-state fluorescence material, wherein a groove matching the blue light chip is disposed on the Ce: YAG solid-state fluorescence material, and the blue light chip is embedded into the groove wherein the embedded white light LED package structure based on a solid-state fluorescence material further comprises a heat conducting substrate, and the heat conducting substrate is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material.
2. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 1, wherein a light reflecting film is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material, the heat conducting substrate is disposed on an embedded surface of the blue light chip of the Ce:YAG solid-state fluorescence material.
3. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 1, wherein a red light film is disposed on a light extraction surface of the Ce:YAG solid-state fluorescence material, and the red light film is capable of converting partial blue light into red light having a light emission band being 580 nm to 660 nm.
4. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 1, wherein the Ce:YAG solid-state fluorescence material is any one of Ce:YAG fluorescent single crystal, Ce:YAG fluorescent polycrystal, Ce:YAG fluorescent ceramic, or Ce:YAG fluorescent glass.
5. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 4, wherein a chemical formula of a main constituent of the Ce:YAG solid-state fluorescence material is (Y1-x-mAxCem)3(Al1-yBy)5O12 with 0≦x≦1, 0≦y≦1, and 0≦m≦0.05, A representing one of Lu, Tb, Pr, La, and Gd, and B representing one of Ga, Ti, Mn, Cr, and Zr.
6. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 1, wherein the blue light chip is GaN-based blue light chip.
7. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 2, wherein a red light film is disposed on a light extraction surface of the Ce:YAG solid-state fluorescence material, and the red light film is capable of converting partial blue light into red light having a light emission band being 580 nm to 660 nm.
8. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 2, wherein the Ce:YAG solid-state fluorescence material is any one of Ce:YAG fluorescent single crystal, Ce:YAG fluorescent polycrystal, Ce:YAG fluorescent ceramic, or Ce:YAG fluorescent glass.
9. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 8, wherein a chemical formula of a main constituent of the Ce:YAG solid-state fluorescence material is (Y1-x-mAxCem)3(Al1-yBy)5O12 with 0≦x≦1, 0≦y≦1, and 0≦m≦0.05, A representing one of Lu, Tb, Pr, La, and Gd, and B representing one of Ga, Ti, Mn, Cr, and Zr.
10. The embedded white light LED package structure based on a solid-state fluorescence material according to claim 2, wherein the blue light chip is GaN-based blue light chip.
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