US9117772B2 - Bonding package components through plating - Google Patents
Bonding package components through plating Download PDFInfo
- Publication number
- US9117772B2 US9117772B2 US13/527,422 US201213527422A US9117772B2 US 9117772 B2 US9117772 B2 US 9117772B2 US 201213527422 A US201213527422 A US 201213527422A US 9117772 B2 US9117772 B2 US 9117772B2
- Authority
- US
- United States
- Prior art keywords
- electrical connector
- metal layer
- plating
- package component
- electrical connectors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 238000007747 plating Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 238000007654 immersion Methods 0.000 claims description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 238000007772 electroless plating Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 83
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002131 composite material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Definitions
- integrated circuit devices such as transistors are first formed at the surface of a semiconductor substrate.
- Interconnect structures are then formed over the semiconductor substrate and the integrated circuit devices.
- Electrical connectors such as metal bumps are formed on the surface of the semiconductor wafer to electrically connect to the integrated circuit devices.
- the semiconductor wafer is sawed into a plurality of semiconductor chips.
- Packaging the semiconductor chips may be performed through reflow processes.
- the solder regions between the electrical connectors of the semiconductor chips are reflowed to bond the semiconductor chips to other package components such as device dies, interposers, package substrates, or the like.
- the solder regions are molten in the reflow processes.
- the shapes and the profiles of the molten solder regions are difficult to control, however. This may cause problems such as bridging, and hence deteriorations of the bonding quality or the yield loss.
- FIGS. 1 through 6 are cross-sectional views of intermediate stages in the bonding of package components in accordance with some exemplary embodiments, wherein the bonding is performed through the plating of metal layers;
- FIGS. 7 through 11 are cross-sectional views of bonded package components in accordance with some alternative exemplary embodiments.
- a package and the method of forming the same are provided in accordance with various exemplary embodiments. Intermediate stages of forming the package through a bonding process are illustrated. Variations of the embodiments are discussed. Throughout various views and illustrative embodiments, like reference numbers are used to designate like elements.
- FIG. 1 illustrates package components 100 and 200 that are to be bonded to each other.
- package components 100 and 200 may be a device die, an interposer die, a package substrate (such as a laminate substrate), a package, or the like.
- package component 100 or 200 When package component 100 or 200 is a device die, it may be a memory die, a core device die, or the like, which includes active devices (not shown) such as transistors therein.
- package component 100 or 200 is an interposer die, the interposer die is free from active devices therein, and may or may not comprise passive devices (not shown) such as resistors and capacitors therein.
- Package component 100 includes electrical connector 102
- package component 200 includes electrical connector 202 .
- Electrical connectors 102 and 202 may be metal connectors comprising copper, nickel, palladium, aluminum, gold, alloys thereof, and combinations thereof. Accordingly, electrical connectors 102 and 202 are alternatively referred to hereinafter as metal connectors 102 and 202 , respectively.
- connectors 102 and 202 are metal pillars.
- connector 102 is formed on Under-Bump Metallurgy (UBM) 104 , which is connected to a metal pad (not shown).
- UBM Under-Bump Metallurgy
- connector 202 is formed on UBM 204 , which is connected to a metal pad (not shown).
- one of connectors 102 and 202 is a metal pad that is similar to metal pads 102 A shown in FIG. 5 .
- package components 100 and 200 are placed against each other, with electrical connectors 102 and 202 aligned to each other, and placed in contact with each other. Surface 102 ′ of connector 102 is in contact with surface 202 ′ of connector 202 .
- Surfaces 102 ′ and 202 ′ are substantially flat to have a good contact.
- Package components 100 and 200 are held together as an integrated unit, for example, using a clamp (not shown).
- Reaction solution 20 is provided for performing the subsequent process step as shown in FIG. 2 .
- Arrows 21 represent that package components 100 and 200 are placed against each other, and arrow 23 represents that package components 100 and 200 are placed into reaction solution 20 .
- package components 100 and 200 are submerged into reaction solution 20 .
- the relative positions of connectors 102 and 202 are fixed, and connectors 102 and 202 do not move relative to each other.
- Connectors 102 and 202 remain in contact with each other for a period of time when package components 100 and 200 are in reaction solution 20 .
- Reaction solution 20 is configured to react with electrical connectors 102 and 202 , so that metal plated layer 22 (including layer 22 A and layer 22 B, which are referred to collectively as 22 ) is plated on the surfaces of electrical connectors 102 and 202 .
- the reaction may be an electroless plating reaction or an immersion reaction, and is selective, so that metal layer 22 is plated on electrical connectors 102 and 202 , and not on the dielectric layers such as 106 and 206 in package components 100 and 200 , respectively.
- the metal ions in reaction solution 20 are deposited on the surfaces of electrical connectors 102 and 202 to form metal layer 22 .
- the corresponding reaction is referred to as the electroless plating reaction.
- the metal ions in reaction solution 20 replaces the metal atoms in the surface layer of electrical connectors 102 and 202 to form metal layer 22 .
- the corresponding reaction is referred to as the immersion reaction.
- the resulting metal layer 22 comprises a material selected from electroless copper, electroless Cobalt (CoB or CoWP), Electroless Nickel (EN), Electroless Nickel Immersion Gold (ENIG), Electroless Nickel Electroless Palladium (ENEP), Electroless Nickel Electroless Palladium Immersion Gold (ENEPIG), Immersion Tin (ImSn), Immersion Silver (ImAg), Immersion Gold (ImAu), and combinations thereof.
- reaction solution 20 may be heated to a temperature between about 25° C. and about 90° C.
- package components 100 and 200 may be placed in a plurality of immersion reaction solutions sequentially, so that a plurality of layers are formed layer by layer.
- metal layer 22 is an ENIG layer
- package components 100 and 200 are placed into a first reaction solution to plate a nickel layer.
- Package components 100 and 200 are then placed into a second reaction solution to plate a gold layer.
- the positions of electrical connectors 102 and 202 do not shift relative to each other.
- Thickness T 1 of metal layer 22 may be between about 0.2 ⁇ m and about 20 ⁇ m, and is great enough so that metal layer 22 is strong enough to bond electrical connectors 102 and 202 together, and metal layer 22 does not break. It is appreciated that the dimensions recited throughout the description are merely examples, and may be changed to different values.
- metal layer 22 may include a single layer such as nickel, copper, cobalt, silver, tin, gold, or the like.
- Metal layer 22 may also be a composite layer including a plurality of sub-layers selected from nickel, palladium, gold, copper, cobalt, silver, tin, and the like. Each of the sub-layers may form a ring that encircles electrical connectors 102 and 202 , and the outer rings encircle inner rings. For example, when metal layer 22 is an ENIG layer, a gold layer encircles a nickel layer. Furthermore, metal layer 22 includes first portions on the sidewalls of electrical connector 102 and the second portions on the sidewalls of electrical connector 202 . No distinguishable interface exists between the first portions and the second portions since the first and the second portions of metal layer 22 are formed simultaneously. The first portions and the second portions may have substantially uniform thicknesses. After plating, package components 100 and 200 are removed from reaction solution 20 , and are rinsed, for example, using de-ionized water.
- FIGS. 1 and 2 package components 100 and 200 are bonded with no gap left between electrical connectors 102 and 202 . Accordingly, metal layer 22 does not extend between connectors 102 and 202 .
- FIGS. 3 and 4 illustrate the bonding of package components 100 and 200 in accordance with alternative embodiments. Unless specified otherwise, the materials and formation methods of the components in these embodiments and the embodiments in FIGS. 5 through 11 are essentially the same as the components that are denoted in FIGS. 1 and 2 using same reference numerals. The details of the like components shown in FIGS. 3 through 11 may thus be found in the discussion of the embodiments shown in FIGS. 1 and 2 .
- package components 100 and 200 are placed, with electrical connectors 102 and 202 aligned to each other.
- the relative positions of package components 100 and 200 are fixed and secured, for example, by clamps and spacers (not shown).
- electrical connectors 102 and 202 are spaced apart from each other by a gap having a D 1 distance.
- Distance D 1 between electrical connectors 102 and 202 may be smaller than about 10 ⁇ m, although distance D 1 may have a different value.
- the placement of package components 100 and 200 are performed before package components 100 and 200 are placed into reaction solution 20 , wherein the placing of package components 100 and 200 into reaction solution 20 is represented by an arrow in FIG. 3 .
- metal layer 22 is plated, wherein the step for plating metal layer 22 is the same as the plating step shown in FIGS. 1 and 2 .
- the resulting metal layer 22 bonds package components 100 and 200 to each other.
- Metal layer 22 besides being plated on the sidewalls of electrical connectors 102 and 202 , also comprises a portion plated between electrical connectors 102 and 202 .
- the portion of metal layer 22 in the gap contacts both surfaces 102 ′ and 202 ′.
- metal layer 22 is a composite layer comprising sub-layers 22 A and 22 B, which comprise different metals.
- metal layer 22 is a composite layer comprising additional sub-layers.
- sub-layer 22 A is label using both “ 22 A” and “ 22 ” to indicated that sub-layer 22 A is also a portion of layer 22
- sub-layer 22 B is label using both “ 22 B” and “ 22 ” to indicated that sub-layer 22 B is also a portion of layer 22 .
- metal layer 22 comprises more than two sub-layers. Accordingly, the composite metal layer 22 is plated using a plurality of reaction solutions 20 , each for plating one sub-layer. Each of the sub-layers (such as 22 A and 22 B) is plated using the same method shown in FIGS.
- Sub-layer 22 B may be plated when sub-layer 22 A has already filled the gap between electrical connectors 102 and 202 substantially fully.
- sub-layer 22 A is a nickel layer that is plated between, and on sidewalls of, electrical connectors 102 and 202 .
- Sub-layer 22 B is a gold layer, or a composite layer comprising a palladium layer and a gold layer.
- sub-layer 22 A is a composite layer comprising a nickel layer and a palladium layer, and is plated between, and on sidewalls of, electrical connectors 102 and 202 .
- Sub-layer 22 B may in turn be a gold layer.
- FIGS. 5 and 6 illustrate the intermediate stages in bonding through plating, wherein package components 100 includes two separate package component 100 A and 100 B.
- package component 200 includes electrical connectors 202 , which further include electrical connectors 202 A and 202 B. Height H 1 of electrical connectors 202 A is greater than height H 2 of electrical connectors 202 B.
- Package component 100 A includes electrical connectors 102 A, which are aligned to electrical connectors 202 A.
- Package component 100 B includes electrical connectors 102 B, which are aligned to electrical connectors 202 B.
- Package component 100 B may also be a device die, an interposer, a package substrate, a package, or the like.
- electrical connectors 102 A and 102 B are aligned to electrical connectors 202 A and 202 B, respectively, and the positions of package components 100 A, 100 B, and 200 are fixed relative to each other.
- Package component 200 may include electrical connectors 201 , which may be solder balls.
- electrical connectors 102 A are in contact with electrical connectors 202 A, and/or electrical connectors 102 B are in contact with electrical connectors 202 B.
- electrical connectors 102 A are spaced apart from electrical connectors 202 A, and/or electrical connectors 102 B are spaced apart from electrical connectors 202 B.
- Arrow 21 in FIG. 5 represents the step for placing package components 100 A, 100 B, and 200 together, and arrow 23 represents that package components 100 A, 100 B, and 200 are placed into reaction solution 20 .
- package components 100 A, 100 B, and 200 are placed in reaction solution 20 to form metal layers 22 .
- package components 100 A and 100 B are bonded to package component 200 .
- metal layers 22 are not inserted between electrical connectors 102 A and 202 A (or 102 B and 202 B), similar to what are shown in FIG. 2 .
- metal layers 22 are inserted between electrical connectors 102 A and 202 A (or 102 B and 202 B), similar to what are shown in FIG. 4 .
- the details of metal layer 22 are essentially the same as in FIGS. 2 and 4 , and hence are not repeated herein.
- the bonding of package components 100 A and 100 B to package component 200 is performed simultaneously. In alternative embodiments, the step of bonding package component 100 B to package component 200 is performed before the step of bonding package component 100 A to package component 200 .
- FIG. 7 illustrates a resulting package after the bonded package components 100 A, 100 B, and 200 are taken out of reaction solution 20 and rinsed.
- polymer 24 which may be a molding compound, a molding underfill, or the like, is dispensed into the gap between package components 100 A and 200 .
- Polymer 24 molds package component 100 B therein.
- polymer 24 has top surface 24 ′ level with or slightly lower than top surface 100 B′ of package component 100 B.
- polymer 24 fills an entirety of the gap between package components 100 A and 200 .
- Package component 100 B is hence fully encapsulated in polymer 24 .
- FIGS. 8 through 11 illustrate the bonded package in accordance with alternative embodiments. These embodiments are essentially the same as the embodiments in FIGS. 5 through 7 , except that the shapes of electrical connectors 102 A/ 102 B/ 102 / 202 A/ 202 B/ 202 are different.
- electrical connectors 102 A are bond pads.
- Electrical connectors 202 A are tapered metal pillars, with top width W 1 smaller than bottom width W 2 .
- the tapered ends of electrical connectors 202 A are bonded to bond pads 102 A.
- Electrical connectors 202 A are tapered in accordance with these embodiments.
- the surfaces of electrical connectors 102 A and 202 A have different sizes.
- electrical connectors 102 A and 202 A are all metal pillars, and the surfaces of electrical connectors 102 A and 202 A that contact each other may have substantially equal sizes.
- electrical connectors 102 A and 202 A are all metal pillars.
- Metal pillars 102 A are not tapered, and width W 3 is substantially equal to width W 4 .
- Electrical connectors 202 A are tapered metal pillars.
- package components 100 and 200 are bonded to each other, with electrical connectors 102 being metal pads, and electrical connectors 202 being metal pillars. No additional package component is disposed between package components 100 and 200 in these embodiments. It is appreciated that FIGS. 8 through 11 show some exemplary combinations of different types and shapes of connectors 102 A, 102 B, 202 A, and 202 B, and further combinations of the shapes and types of electrical connectors are also in the scope of various embodiments.
- the bonding process is performed through an electroless plating or an immersion process. Accordingly, compared to existing metal-to-metal direct bonding, the bonding in accordance with embodiments may be performed at lower temperatures, and no high pressure is needed to press the package components against each other during the bonding process. The bonding in accordance with embodiments also does not involve the use of solder, which is likely to cause bridging due to the reflow process. The minimum pitch of the electrical connectors is thus reduced.
- a method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.
- a method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, the first and the second package components are submerged into a plating solution to plate a metal layer, wherein the metal layer is in contact with the first and the second electrical connectors, and bonds the first electrical connector to the second electrical connector. After the metal layer is plated, the first package component and the second package component are retrieved from the plating solution.
- a device in accordance with yet other embodiments, includes a first package component having a first electrical connector, wherein the first electrical connector comprises a first surface and first sidewall surfaces.
- the device further includes a second package component having a second electrical connector, wherein the second electrical connector comprises a second surface and second sidewall surfaces, and wherein the second surface of the second electrical connector faces the first surface of the first electrical connector.
- a metal layer includes a first portion on the first sidewall surfaces and a second portion on the second sidewall surfaces, wherein the first portion is continuously connected to the second portion, with no interfaces therebetween.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (21)
Priority Applications (6)
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US13/527,422 US9117772B2 (en) | 2012-06-19 | 2012-06-19 | Bonding package components through plating |
CN201310136202.4A CN103515251B (en) | 2012-06-19 | 2013-04-18 | By coating bond package element |
TW102119545A TWI508203B (en) | 2012-06-19 | 2013-06-03 | Bonding package components through plating |
US14/833,840 US9691738B2 (en) | 2012-06-19 | 2015-08-24 | Bonding package components through plating |
US15/632,686 US10483230B2 (en) | 2012-06-19 | 2017-06-26 | Bonding package components through plating |
US16/580,666 US10840212B2 (en) | 2012-06-19 | 2019-09-24 | Bonding package components through plating |
Applications Claiming Priority (1)
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US13/527,422 US9117772B2 (en) | 2012-06-19 | 2012-06-19 | Bonding package components through plating |
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US14/833,840 Division US9691738B2 (en) | 2012-06-19 | 2015-08-24 | Bonding package components through plating |
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US20130334692A1 US20130334692A1 (en) | 2013-12-19 |
US9117772B2 true US9117772B2 (en) | 2015-08-25 |
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US14/833,840 Active US9691738B2 (en) | 2012-06-19 | 2015-08-24 | Bonding package components through plating |
US15/632,686 Expired - Fee Related US10483230B2 (en) | 2012-06-19 | 2017-06-26 | Bonding package components through plating |
US16/580,666 Active US10840212B2 (en) | 2012-06-19 | 2019-09-24 | Bonding package components through plating |
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US14/833,840 Active US9691738B2 (en) | 2012-06-19 | 2015-08-24 | Bonding package components through plating |
US15/632,686 Expired - Fee Related US10483230B2 (en) | 2012-06-19 | 2017-06-26 | Bonding package components through plating |
US16/580,666 Active US10840212B2 (en) | 2012-06-19 | 2019-09-24 | Bonding package components through plating |
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US (4) | US9117772B2 (en) |
CN (1) | CN103515251B (en) |
TW (1) | TWI508203B (en) |
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AU2010303421A1 (en) * | 2009-10-07 | 2012-05-10 | Rain Bird Corporation | Volumetric budget based irrigation control |
US9117772B2 (en) | 2012-06-19 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding package components through plating |
US9379078B2 (en) * | 2013-11-07 | 2016-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D die stacking structure with fine pitches |
US10679930B2 (en) * | 2015-11-30 | 2020-06-09 | Hana Micron Inc. | Metal core solder ball interconnector fan-out wafer level package |
US11798907B2 (en) | 2020-11-06 | 2023-10-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor packages |
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US20090014897A1 (en) * | 2003-05-15 | 2009-01-15 | Kumamoto Technology & Industry Foundation | Semiconductor chip package and method of manufacturing the same |
US20120326297A1 (en) * | 2011-06-23 | 2012-12-27 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Protective Coating Over Interconnect Structure to Inhibit Surface Oxidation |
US8558379B2 (en) * | 2007-09-28 | 2013-10-15 | Tessera, Inc. | Flip chip interconnection with double post |
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JP2007305667A (en) * | 2006-05-09 | 2007-11-22 | Toshiba Corp | Semiconductor device and its manufacturing method |
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US7855137B2 (en) * | 2008-08-12 | 2010-12-21 | International Business Machines Corporation | Method of making a sidewall-protected metallic pillar on a semiconductor substrate |
CN101728347B (en) * | 2008-10-22 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Package structure and manufacture method thereof |
US8580607B2 (en) * | 2010-07-27 | 2013-11-12 | Tessera, Inc. | Microelectronic packages with nanoparticle joining |
US8409922B2 (en) * | 2010-09-14 | 2013-04-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming leadframe interposer over semiconductor die and TSV substrate for vertical electrical interconnect |
US20120080787A1 (en) * | 2010-10-05 | 2012-04-05 | Qualcomm Incorporated | Electronic Package and Method of Making an Electronic Package |
KR101817159B1 (en) * | 2011-02-17 | 2018-02-22 | 삼성전자 주식회사 | Semiconductor package having TSV interposer and method of manufacturing the same |
US9117772B2 (en) | 2012-06-19 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding package components through plating |
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2012
- 2012-06-19 US US13/527,422 patent/US9117772B2/en not_active Expired - Fee Related
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2013
- 2013-04-18 CN CN201310136202.4A patent/CN103515251B/en not_active Expired - Fee Related
- 2013-06-03 TW TW102119545A patent/TWI508203B/en not_active IP Right Cessation
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2015
- 2015-08-24 US US14/833,840 patent/US9691738B2/en active Active
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- 2017-06-26 US US15/632,686 patent/US10483230B2/en not_active Expired - Fee Related
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2019
- 2019-09-24 US US16/580,666 patent/US10840212B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20090014897A1 (en) * | 2003-05-15 | 2009-01-15 | Kumamoto Technology & Industry Foundation | Semiconductor chip package and method of manufacturing the same |
US8558379B2 (en) * | 2007-09-28 | 2013-10-15 | Tessera, Inc. | Flip chip interconnection with double post |
US20120326297A1 (en) * | 2011-06-23 | 2012-12-27 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Protective Coating Over Interconnect Structure to Inhibit Surface Oxidation |
Also Published As
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US10483230B2 (en) | 2019-11-19 |
US20130334692A1 (en) | 2013-12-19 |
US20200020662A1 (en) | 2020-01-16 |
US20150364449A1 (en) | 2015-12-17 |
TW201401399A (en) | 2014-01-01 |
US10840212B2 (en) | 2020-11-17 |
US20170294402A1 (en) | 2017-10-12 |
US9691738B2 (en) | 2017-06-27 |
CN103515251B (en) | 2016-05-04 |
TWI508203B (en) | 2015-11-11 |
CN103515251A (en) | 2014-01-15 |
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