US7932130B2 - Method for forming an etched recess package on package system - Google Patents
Method for forming an etched recess package on package system Download PDFInfo
- Publication number
- US7932130B2 US7932130B2 US12/185,058 US18505808A US7932130B2 US 7932130 B2 US7932130 B2 US 7932130B2 US 18505808 A US18505808 A US 18505808A US 7932130 B2 US7932130 B2 US 7932130B2
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- US
- United States
- Prior art keywords
- die attach
- encapsulation
- attach paddle
- interconnection pads
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01046—Palladium [Pd]
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- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Definitions
- the present invention relates generally to integrated circuits and more particularly to a system for utilizing an etched recess in a package on package system.
- the rapidly growing portable electronics market e.g. cellular phones, laptop computers, and PDAs, are an integral facet of modern life.
- the multitude of portable devices represents one of the largest potential market opportunities for next generation packaging.
- These devices have unique attributes that have significant impacts on manufacturing integration, in that they must be generally small, lightweight, and rich in functionality and they must be produced in high volumes at relatively low cost.
- Packaging, materials engineering, and development are at the very core of these next generation electronics insertion strategies outlined in road maps for development of next generation products. Future electronic systems may be more intelligent, have higher density, use less power, operate at higher speed, and may include mixed technology devices and assembly structures at lower cost than today.
- next level interconnect assemblies are not yet known, and no clear cost effective technology has yet been identified. Beyond the performance requirements of next generation devices, the industry now demands that cost be a primary product differentiator in an attempt to meet profit goals.
- the road maps are driving electronics packaging to precision, ultra miniature form factors, which require automation in order to achieve acceptable yield.
- the present invention provides an integrated circuit package system that includes: providing a die attach paddle with interconnection pads connected to a bottom surface of the die attach paddle; connecting a first device to the interconnection pads with a bond wire; connecting a lead to the interconnection pad or to the first device; encapsulating the first device and the die attach paddle with an encapsulation having a top surface; and etching the die attach paddle leaving a recess in the top surface of the encapsulation.
- FIG. 1 is a top view of an integrated circuit package system in a first embodiment of the present invention
- FIG. 2 is a cross-sectional view of the integrated circuit package system along the line 2 - 2 of FIG. 1 ;
- FIG. 3 a cross-sectional view of the integrated circuit package system of FIG. 2 in a pre-etch phase of manufacture
- FIG. 4 is the integrated circuit package system of FIG. 2 in a post-etch phase of manufacture
- FIG. 5 is a cross-sectional view of an integrated circuit package system in a second embodiment of the present invention.
- FIG. 6 is a flow chart of a system for manufacturing the integrated circuit package system of FIG. 1 in an embodiment of the present invention.
- the term “horizontal” as used herein is defined as a plane parallel to the plane or surface of the integrated circuit, regardless of its orientation.
- the term “vertical” refers to a direction perpendicular to the horizontal as just defined. Terms, such as “above”, “below”, “bottom”, “top”, “side” (as in “sidewall”), “higher”, “lower”, “upper”, “over”, and “under”, are defined with respect to the horizontal plane.
- the term “on” means that there is direct contact among elements.
- processing includes deposition of material or photoresist, patterning, exposure, development, etching, cleaning, and/or removal of the material or photoresist as required in forming a described structure.
- system refers to and is defined as the method and as the apparatus of the present invention in accordance with the context in which the term is used.
- FIG. 1 therein is shown a top view of an integrated circuit package system 100 in a first embodiment of the present invention.
- the integrated circuit package system 100 is shown having an encapsulation 102 such as an epoxy mould compound.
- the encapsulation 102 has an encapsulation edge 104 .
- leads 106 At the edge 104 of the encapsulation 102 are leads 106 .
- the leads 106 do not extend substantially beyond the edge 104 of the encapsulation 102 .
- the encapsulation 102 fills spaces 108 in between the leads 106 .
- a second device 110 such as a wafer level chip scale package (WLCSP), a redistributed line (RDL) die, or an area array package is shown mounted above the encapsulation 102 .
- WLCSP wafer level chip scale package
- RDL redistributed line
- a second device 110 is mounted inside the recess 114 .
- FIG. 2 therein is shown a cross-sectional view of the integrated circuit package system 100 along the line 2 - 2 of FIG. 1 .
- the integrated circuit package system 100 is shown having first device 202 such as a wire-bonded die.
- the first device 202 has an active side 204 .
- the active side 204 of the first device 202 is connected to at least one of the interconnection pads 206 .
- the interconnection pads 206 are coated or composed substantially of NiPd—Au. This nickel palladium and gold composition resists copper etching and allows the formation of the recess 114 .
- interconnection pads 206 enables an electrical connection of the first device 202 without added structural elements such as interposers and substrates. This allows for a very thin package by reducing the number of internal components.
- the active side 204 of the first device 202 is connected to the interconnection pads 206 with bond wires 208 .
- the encapsulation 102 encapsulates the bond wires 208 .
- the encapsulation also adds structural support by filling spaces 210 in between the interconnection pads 206 .
- the first device 202 is attached to a die pad 212 with die attach adhesive 214 .
- the die pad is coated or composed substantially of NiPd—Au.
- the die attach adhesive 214 should be a high thermally conductive adhesive to allow the first device 202 to shed heat through the die pad 212 .
- the encapsulation 102 forms a rigid structure around the interconnection pads 206 , the bond wires 208 , and the first device 202 . It has been unexpectedly discovered that the use of the encapsulation 102 as a rigid structure containing and supporting the interconnection pads 206 , the bond wires 208 , and the first device 202 , reduces the complexity and number of internal components. The result being higher end-line yields, reduced costs, and competitive reduction in package size.
- the encapsulation 102 also partially contains and partially surrounds the leads 106 .
- the leads 106 are coated or composed substantially of NiPd—Au.
- the leads 106 are encapsulated by a top surface 220 of the encapsulation 102 .
- the leads 106 are connected to the interconnection pads 206 with the bond wires 208 .
- the bond wires 208 are fully encapsulated by the encapsulation 102 .
- the recess 114 further contributes to the thin dimensions of the package. Because of the absence of structural components such as interposers or substrates, the second device 110 may be mounted closer to the first device 202 .
- the second device 110 is connected to the interconnection pads 206 with interconnects such as metal connection pads 222 .
- the second device 110 is shown having a second wire-bonded die 224 with an active side 226 .
- the active side 226 is connected to the metal connection pads 222 with the bond wires 208 .
- the wire-bonded die 224 is attached to a second die pad 228 with the die attach adhesive 214 . Encapsulating the second wire-bonded die 224 is a second encapsulation 230 .
- FIG. 3 therein is shown the cross-sectional view of the integrated circuit package system 100 of FIG. 2 in a pre-etch phase of manufacture.
- the integrated circuit package system 100 is shown having a die attach paddle 302 such as a copper die attach paddle.
- the die attach paddle 302 has the interconnection pads 206 connected to a bottom surface 304 of the die attach paddle 302 .
- the die attach paddle 302 is exposed on the top surface 220 of the encapsulation 102 .
- the NiPd—Au is resistant to Copper etching, which will leave the leads 106 and the interconnection pads 206 remaining after a copper etch has etched the die attach paddle 302 . This result may also be accomplished by a selective etching only the die attach paddle 302 in the recess 114 .
- the leads 106 are shown thinner than the die attach paddle 302 and having a top planar surface 306 and a bottom planar surface 308 .
- Both the top planar surface 306 and the bottom planar surface 308 terminate near the die attach paddle 302 and either the top planar surface 306 or the bottom planar surface 308 are coplanar with a planar surface 310 of the die attach paddle 302 .
- the bottom planar surface 308 is above the level of the interconnection pads 206 .
- FIG. 4 therein is shown the integrated circuit package system 100 of FIG. 2 in a post-etch phase of manufacture after the die attach paddle 302 of FIG. 3 has been removed.
- the integrated circuit package system 100 is shown having the recess 114 created near the top surface of the encapsulation 102 .
- the interconnection pads 206 are now exposed in the bottom of the recess 114 .
- the encapsulation 102 between the spaces 210 of the interconnection pads 206 is also exposed.
- FIG. 5 therein is shown a cross-sectional view of an integrated circuit package system 500 in a second embodiment of the present invention.
- the integrated circuit package system 500 is shown having first device 502 such as a flip chip.
- the first device 502 has an active side 504 .
- the active side 504 of the first device 502 is connected to interconnection pads 506 .
- the interconnection pads 506 are coated or composed substantially of NiPd—Au. This nickel palladium and gold composition resists copper etching and allows the formation of a recess 508 .
- interconnection pads 506 enables an electrical connection of the first device 502 without added structural elements such as interposers and substrates. This allows for a very thin package by reducing the number of internal components.
- the active side 504 of the first device 502 is connected to the interconnection pads 506 with interconnects such as solder balls 512 .
- An encapsulation 514 such as an epoxy mold compound, encapsulates the solder balls 512 .
- the encapsulation also adds structural support by filling spaces 516 in between the interconnection pads 506 .
- the encapsulation 514 forms a rigid structure around the interconnection pads 506 , the solder balls 512 , and the first device 502 . It has been unexpectedly discovered that the use of the encapsulation 514 as a rigid structure containing and supporting the interconnection pads 506 , the solder balls 512 , and the first device 502 , reduces the complexity and number of internal components. The result being higher end-line yields, reduced costs, and competitive reduction in package size.
- the encapsulation 514 also partially contains and partially surrounds leads such as leads 518 .
- the leads 518 are coated or composed substantially of NiPd—Au.
- the leads 518 are exposed from a top surface 520 of the encapsulation 514 .
- the leads 518 are connected to the interconnection pads 506 with bond wires 524 .
- the bond wires 524 are fully encapsulated by the encapsulation 514 .
- a second device 526 such as a wafer level chip scale package (WLCSP), a redistributed line (RDL) die, or an area array package.
- WLCSP wafer level chip scale package
- RDL redistributed line
- the recess 508 further contributes to the thin dimensions of the package. Because of the absence of structural components such as interposers or substrates, the second device 526 may be mounted closer to the first device 502 .
- the second device 526 is connected to the interconnection pads 506 with the solder balls 512 .
- a third device 528 such as a wafer level chip scale package (WLCSP), a redistributed line (RDL) die, or an area array package.
- WLCSP wafer level chip scale package
- RDL redistributed line
- the third device 528 is connected to the leads 518 with the solder balls 512 .
- the system 600 includes providing a die attach paddle with interconnection pads connected to a bottom surface of the die attach paddle in a block 602 ; connecting a first device to the interconnection pads with a bond wire in a block 604 ; connecting a lead to the interconnection pad or to the first device in a block 606 ; encapsulating the first device and the die attach paddle with an encapsulation having a top surface in a block 608 ; and etching the die attach paddle leaving a recess in the top surface of the encapsulation in a block 610 .
- the etched recess system of the present invention furnishes important and heretofore unknown and unavailable solutions, capabilities, and functional aspects for package on package configurations.
- the resulting processes and configurations are straightforward, cost-effective, uncomplicated, highly versatile, accurate, sensitive, and effective, and can be implemented by adapting known components for ready, efficient, and economical manufacturing, application, and utilization.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US12/185,058 US7932130B2 (en) | 2008-08-01 | 2008-08-01 | Method for forming an etched recess package on package system |
US13/080,469 US8941219B2 (en) | 2008-08-01 | 2011-04-05 | Etched recess package on package system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US12/185,058 US7932130B2 (en) | 2008-08-01 | 2008-08-01 | Method for forming an etched recess package on package system |
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US13/080,469 Division US8941219B2 (en) | 2008-08-01 | 2011-04-05 | Etched recess package on package system |
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US7932130B2 true US7932130B2 (en) | 2011-04-26 |
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US13/080,469 Active US8941219B2 (en) | 2008-08-01 | 2011-04-05 | Etched recess package on package system |
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Cited By (1)
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US20120002386A1 (en) * | 2010-07-01 | 2012-01-05 | Nokia Corporation | Method and Apparatus for Improving the Reliability of Solder Joints |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US9576873B2 (en) * | 2011-12-14 | 2017-02-21 | STATS ChipPAC Pte. Ltd. | Integrated circuit packaging system with routable trace and method of manufacture thereof |
US8759956B2 (en) * | 2012-07-05 | 2014-06-24 | Infineon Technologies Ag | Chip package and method of manufacturing the same |
US9601419B1 (en) * | 2014-06-06 | 2017-03-21 | Altera Corporation | Stacked leadframe packages |
CN105556663B (en) * | 2014-12-23 | 2020-01-07 | 英特尔公司 | Integrated package design with leads for package on package products |
US11328984B2 (en) * | 2017-12-29 | 2022-05-10 | Texas Instruments Incorporated | Multi-die integrated circuit packages and methods of manufacturing the same |
US11088055B2 (en) * | 2018-12-14 | 2021-08-10 | Texas Instruments Incorporated | Package with dies mounted on opposing surfaces of a leadframe |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5830800A (en) * | 1997-04-11 | 1998-11-03 | Compeq Manufacturing Company Ltd. | Packaging method for a ball grid array integrated circuit without utilizing a base plate |
US6306682B1 (en) * | 1999-05-31 | 2001-10-23 | Siliconware Precision Industries Co., Ltd. | Method of fabricating a ball grid array integrated circuit package having an encapsulating body |
US6710430B2 (en) * | 2001-03-01 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Resin-encapsulated semiconductor device and method for manufacturing the same |
US6972372B1 (en) * | 2004-05-28 | 2005-12-06 | Macronix International Co., Ltd. | Method and apparatus for stacking electrical components using outer lead portions and exposed inner lead portions to provide interconnection |
US6974776B2 (en) * | 2003-07-01 | 2005-12-13 | Freescale Semiconductor, Inc. | Activation plate for electroless and immersion plating of integrated circuits |
US20060261453A1 (en) * | 2005-03-16 | 2006-11-23 | Yonggill Lee | Semiconductor package and stack arrangement thereof |
US20070181990A1 (en) | 2006-02-03 | 2007-08-09 | Siliconware Precision Industries Co., Ltd. | Stacked semiconductor structure and fabrication method thereof |
US20070187826A1 (en) | 2006-02-14 | 2007-08-16 | Stats Chippac Ltd. | 3-d package stacking system |
US20070209834A1 (en) | 2006-03-08 | 2007-09-13 | Stats Chippac Ltd. | Integrated circuit leaded stacked package system |
US20070210443A1 (en) | 2006-03-08 | 2007-09-13 | Stats Chippac Ltd. | Integrated circuit package on package system |
US20070252284A1 (en) | 2006-04-28 | 2007-11-01 | Po-Ching Su | Stackable semiconductor package |
US20070284715A1 (en) | 2006-06-07 | 2007-12-13 | Advanced Semiconductor Engineering, Inc. | System-in-package device |
US20090072366A1 (en) | 2007-09-18 | 2009-03-19 | Guruprasad Badakere Govindaiah | Integrated circuit package system with dual connectivity |
US7517733B2 (en) * | 2007-03-22 | 2009-04-14 | Stats Chippac, Ltd. | Leadframe design for QFN package with top terminal leads |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2843464B2 (en) * | 1992-09-01 | 1999-01-06 | シャープ株式会社 | Solid-state imaging device |
TWI250632B (en) * | 2003-05-28 | 2006-03-01 | Siliconware Precision Industries Co Ltd | Ground-enhancing semiconductor package and lead frame |
TWI249832B (en) * | 2003-11-10 | 2006-02-21 | Siliconware Precision Industries Co Ltd | Lead frame and semiconductor package with the lead frame |
US7045888B2 (en) * | 2004-06-29 | 2006-05-16 | Macronix International Co., Ltd. | Ultra thin dual chip image sensor package structure and method for fabrication |
US8067821B1 (en) * | 2008-04-10 | 2011-11-29 | Amkor Technology, Inc. | Flat semiconductor package with half package molding |
-
2008
- 2008-08-01 US US12/185,058 patent/US7932130B2/en active Active
-
2011
- 2011-04-05 US US13/080,469 patent/US8941219B2/en active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5830800A (en) * | 1997-04-11 | 1998-11-03 | Compeq Manufacturing Company Ltd. | Packaging method for a ball grid array integrated circuit without utilizing a base plate |
US6306682B1 (en) * | 1999-05-31 | 2001-10-23 | Siliconware Precision Industries Co., Ltd. | Method of fabricating a ball grid array integrated circuit package having an encapsulating body |
US6710430B2 (en) * | 2001-03-01 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Resin-encapsulated semiconductor device and method for manufacturing the same |
US6974776B2 (en) * | 2003-07-01 | 2005-12-13 | Freescale Semiconductor, Inc. | Activation plate for electroless and immersion plating of integrated circuits |
US6972372B1 (en) * | 2004-05-28 | 2005-12-06 | Macronix International Co., Ltd. | Method and apparatus for stacking electrical components using outer lead portions and exposed inner lead portions to provide interconnection |
US20060261453A1 (en) * | 2005-03-16 | 2006-11-23 | Yonggill Lee | Semiconductor package and stack arrangement thereof |
US20070181990A1 (en) | 2006-02-03 | 2007-08-09 | Siliconware Precision Industries Co., Ltd. | Stacked semiconductor structure and fabrication method thereof |
US20070187826A1 (en) | 2006-02-14 | 2007-08-16 | Stats Chippac Ltd. | 3-d package stacking system |
US20070209834A1 (en) | 2006-03-08 | 2007-09-13 | Stats Chippac Ltd. | Integrated circuit leaded stacked package system |
US20070210443A1 (en) | 2006-03-08 | 2007-09-13 | Stats Chippac Ltd. | Integrated circuit package on package system |
US20070252284A1 (en) | 2006-04-28 | 2007-11-01 | Po-Ching Su | Stackable semiconductor package |
US20070284715A1 (en) | 2006-06-07 | 2007-12-13 | Advanced Semiconductor Engineering, Inc. | System-in-package device |
US7517733B2 (en) * | 2007-03-22 | 2009-04-14 | Stats Chippac, Ltd. | Leadframe design for QFN package with top terminal leads |
US20090072366A1 (en) | 2007-09-18 | 2009-03-19 | Guruprasad Badakere Govindaiah | Integrated circuit package system with dual connectivity |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120002386A1 (en) * | 2010-07-01 | 2012-01-05 | Nokia Corporation | Method and Apparatus for Improving the Reliability of Solder Joints |
Also Published As
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US20110180928A1 (en) | 2011-07-28 |
US20100025830A1 (en) | 2010-02-04 |
US8941219B2 (en) | 2015-01-27 |
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