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US7652342B2 - Nanotube-based transfer devices and related circuits - Google Patents

Nanotube-based transfer devices and related circuits Download PDF

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US7652342B2
US7652342B2 US11/033,087 US3308705A US7652342B2 US 7652342 B2 US7652342 B2 US 7652342B2 US 3308705 A US3308705 A US 3308705A US 7652342 B2 US7652342 B2 US 7652342B2
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nanotube
channel element
nanotube channel
output node
control
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US20050279988A1 (en
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Claude L. Bertin
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Nantero Inc
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Nantero Inc
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Priority to PCT/US2005/018466 priority patent/WO2006007196A2/fr
Priority to CA2570304A priority patent/CA2570304C/fr
Priority to TW094120088A priority patent/TWI305049B/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Definitions

  • This invention relates to nanotube technology and to switching devices that may be used in integrated circuits, including logic circuits, memory devices, etc.
  • Digital logic circuits are used in personal computers, portable electronic devices such as personal organizers and calculators, electronic entertainment devices, and in control circuits for appliances, telephone switching systems, automobiles, aircraft and other items of manufacture.
  • Early digital logic was constructed out of discrete switching elements composed of individual bipolar transistors. With the invention of the bipolar integrated circuit, large numbers of individual switching elements could be combined on a single silicon substrate to create complete digital logic circuits such as inverters, NAND gates, NOR gates, flip-flops, adders, etc.
  • the density of bipolar digital integrated circuits is limited by their high power consumption and the ability of packaging technology to dissipate the heat produced while the circuits are operating.
  • MOS metal oxide semiconductor
  • FET field effect transistor
  • Digital logic integrated circuits constructed from bipolar or MOS devices do not function correctly under conditions of high heat or extreme environments.
  • Current digital integrated circuits are normally designed to operate at temperatures less than 100 degrees centigrade and few operate at temperatures over 200 degrees centigrade.
  • the leakage current of the individual switching elements in the “off” state increases rapidly with temperature. As leakage current increases, the operating temperature of the device rises, the power consumed by the circuit increases, and the difficulty of discriminating the off state from the on state reduces circuit reliability.
  • Conventional digital logic circuits also short internally when subjected to certain extreme environments because electrical currents are generated inside the semiconductor material. It is possible to manufacture integrated circuits with special devices and isolation techniques so that they remain operational when exposed to such environments, but the high cost of these devices limits their availability and practicality. In addition, such digital circuits exhibit timing differences from their normal counterparts, requiring additional design verification to add protection to an existing design.
  • Integrated circuits constructed from either bipolar or FET switching elements are volatile. They only maintain their internal logical state while power is applied to the device. When power is removed, the internal state is lost unless some type of non-volatile memory circuit, such as EEPROM (electrically erasable programmable read-only memory), is added internal or external to the device to maintain the logical state. Even if non-volatile memory is utilized to maintain the logical state, additional circuitry is necessary to transfer the digital logic state to the memory before power is lost, and to restore the state of the individual logic circuits when power is restored to the device.
  • Alternative solutions to avoid losing information in volatile digital circuits, such as battery backup also add cost and complexity to digital designs.
  • logic circuits in an electronic device are low cost, high density, low power, and high speed.
  • Conventional logic solutions are limited to silicon substrates, but logic circuits built on other substrates would allow logic devices to be integrated directly into many manufactured products in a single step, further reducing cost.
  • ROM Read Only Memory
  • PROM Programmable Read only Memory
  • EPROM Electrically Programmable Memory
  • EEPROM Electrically Erasable Programmable Read Only Memory
  • DRAM Dynamic Random Access Memory
  • SRAM Static Random Access Memory
  • ROM is relatively low cost but cannot be rewritten.
  • PROM can be electrically programmed but with only a single write cycle.
  • EPROM has read cycles that are fast relative to ROM and PROM read cycles, but has relatively long erase times and reliability only over a few iterative read/write cycles.
  • EEPROM (or “Flash”) is inexpensive, and has low power consumption but has long write cycles (ms) and low relative speed in comparison to DRAM or SRAM. Flash also has a finite number of read/write cycles leading to low long-term reliability.
  • ROM, PROM, EPROM and EEPROM are all non-volatile, meaning that if power to the memory is interrupted, the memory will retain the information stored in the memory cells.
  • DRAM stores charge on transistor gates that act as capacitors but must be electrically refreshed every few milliseconds, complicating system design by requiring separate circuitry to “refresh” the memory contents before the capacitors discharge.
  • SRAM does not need to be refreshed and is fast relative to DRAM, but has lower density and is more expensive relative to DRAM. Both SRAM and DRAM are volatile, meaning that if power to the memory is interrupted, the memory will lose the information stored in the memory cells.
  • MRAM magnetic RAM
  • FRAM ferromagnetic RAM
  • MRAM utilizes the orientation of magnetization or a ferromagnetic region to generate a nonvolatile memory cell.
  • MRAM utilizes a magnetoresisitive memory element involving the anisotropic magnetoresistance or giant magnetoresistance of ferromagnetic materials yielding nonvolatility. Both of these types of memory cells have relatively high resistance and low-density.
  • a different memory cell based upon magnetic tunnel junctions has also been examined but has not led to large-scale commercialized MRAM devices.
  • FRAM uses a circuit architecture similar to DRAM but which uses a thin film ferroelectric capacitor. This capacitor is purported to retain its electrical polarization after an externally applied electric field is removed yielding a nonvolatile memory.
  • FRAM suffers from a large memory cell size, and it is difficult to manufacture as a large-scale integrated component.
  • phase change memory Another technology having non-volatile memory is phase change memory.
  • This technology stores information via a structural phase change in thin-film alloys incorporating elements such as selenium or tellurium. These alloys are purported to remain stable in both crystalline and amorphous states allowing the formation of a bi-stable switch. While the nonvolatility condition is met, this technology appears to suffer from slow operations, difficulty of manufacture and reliability and has not reached a state of commercialization.
  • Wire crossbar memory has also been proposed. These memory proposals envision molecules as bi-stable switches. Two wires (either a metal or semiconducting type) have a layer of molecules or molecule compounds sandwiched in between. Chemical assembly and electrochemical oxidation or reduction are used to generate an “on” or “off” state. This form of memory requires highly specialized wire junctions and may not retain non-volatility owing to the inherent instability found in redox processes.
  • nanoscopic wires such as single-walled carbon nanotubes
  • nanoscopic wires such as single-walled carbon nanotubes
  • WO 01/03208 Nanoscopic Wire-Based Devices, Arrays, and Methods of Their Manufacture
  • Thomas Rueckes et al. “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing,” Science, vol. 289, pp. 94-97, 7 Jul. 2000.
  • these devices are called nanotube wire crossbar memories (NTWCMs).
  • NSWCMs nanotube wire crossbar memories
  • individual single-walled nanotube wires suspended over other wires define memory cells. Electrical signals are written to one or both wires to cause them to physically attract or repel relative to one another.
  • Each physical state corresponds to an electrical state.
  • Repelled wires are an open circuit junction. Attracted wires are a closed state forming a rectified junction. When electrical power is removed from the junction, the wires retain their physical (and thus electrical) state thereby forming a non-volatile memory cell.
  • U.S. Patent Publication No. 2003-0021966 discloses, among other things, electromechanical circuits, such as memory cells, in which circuits include a structure having electrically conductive traces and supports extending from a surface of a substrate. Nanotube ribbons that can electromechanically deform, or switch are suspended by the supports that cross the electrically conductive traces. Each ribbon comprises one or more nanotubes. The ribbons are typically formed from selectively removing material from a layer or matted fabric of nanotubes.
  • a nanofabric may be patterned into ribbons, and the ribbons can be used as a component to create non-volatile electromechanical memory cells.
  • the ribbon is electromechanically-deflectable in response to electrical stimulus of control traces and/or the ribbon.
  • the deflected, physical state of the ribbon may be made to represent a corresponding information state.
  • the deflected, physical state has non-volatile properties, meaning the ribbon retains its physical (and therefore informational) state even if power to the memory cell is removed.
  • three-trace architectures may be used for electromechanical memory cells, in which the two of the traces are electrodes to control the deflection of the ribbon.
  • the invention provides nanotube transfer devices that controllably form a nanotube-based electrically conductive channel between a first node and a second node under the control of a control structure.
  • Each output node may be connected to an arbitrary network of electrical components.
  • the electrical potential of the control structure induces a nanotube channel element to deflect into contact with or away from an electrode at each node.
  • electrical circuits are provided that ensure proper switching of nanotube transfer devices interconnected with arbitrary circuits.
  • the nanotube transfer device may be volatile or non-volatile.
  • the nanotube transfer device is a three-terminal device or a four-terminal device.
  • the nanotube transfer device of various embodiments can be interconnected with other nanotube transfer devices, nanotube switching devices, nanotube-based logic circuits, MOS transistors, and other electrical components to form electrical circuits implementing analog functions, digital logic circuits, memory devices, etc.
  • the nanotube transfer device of preferred embodiments has low capacitances, no forward voltage drop, high speed and low power operation. It is also radiation and heat tolerant.
  • the invention also provides electrical circuits incorporating nanotube transfer devices having this or other architectures. Signal shaping circuits shift one or more control signals provided to a nanotube transfer device to an operating range where the state of channel formation can be predictably controlled, regardless of the potential of the nanotube channel element. This circuit enables a nanotube-based transfer device to be coupled to variable signals, with arbitrary values in the operating range of the circuit provided by the supply voltage, while retaining defined and predictable switching characteristics.
  • a nanotube transfer device is a three-terminal element.
  • a nanotube transfer device includes a first output node, a second output node, a nanotube channel element including at least one electrically conductive nanotube and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between the first output node and the second output node, the channel including the nanotube channel element.
  • the nanotube channel element is constructed and arranged so that the nanotube channel element is not in electrical contact with either the first output node or the second output node in a state of the device.
  • the control structure includes an electrode having an upper operating voltage that exceeds an upper operating voltage of the first operating range by at least an amount sufficient to ensure channel formation.
  • the nanotube channel element is constructed and arranged so that no electrical signal is provided to the nanotube channel element in a state of the device.
  • the nanotube channel element has a floating potential in a state of the device.
  • control structure induces electromechanical deflection of the nanotube channel element to form the conductive channel.
  • electromechanical deflection forms the channel by causing the nanotube channel element to electrically contact an output electrode in the first output node and an output electrode in the second output node.
  • the first and second output nodes each include an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially independent of the state of the output nodes.
  • the isolation structure is provided by electrodes disposed on the opposite side of the nanotube channel element from output node contact electrodes in such a way as to produce substantially equal but opposite electrostatic forces.
  • the opposing electrodes are in low resistance electrical communication with the corresponding contact electrodes.
  • each output node includes a pair of output electrodes in electrical communication and the output electrodes of each pair are disposed on opposite sides of the nanotube channel element.
  • the nanotube channel element is suspended between insulative supports in spaced relation relative to a control electrode of the control structure.
  • the device is constructed so that deflection of the nanotube channel element is in response to electrostatic attractive forces resulting from signals on the control electrode, independent of signals on the first output node or the second output node.
  • the control electrode is electrically isolated from the nanotube channel element by an insulator.
  • the nanotube channel element is constructed from nanofabric.
  • the nanofabric is preferably carbon nanofabric.
  • the device is non-volatile.
  • the nanotube channel element is non-volatile such that it retains a positional state when a deflecting control signal provided via the control structure is removed.
  • the device is volatile.
  • the nanotube channel element is volatile such that it returns to a normal positional state when a deflecting control signal provided via the control structure is removed.
  • a nanotube transfer device is a four-terminal device.
  • the control structure includes a control electrode and a second control electrode disposed in relation to the nanotube channel element to control formation of the electrically conductive channel between the first output node and the second output node.
  • the control electrode and the second control electrode are positioned on opposite sides of the nanotube channel element.
  • One control electrode can be used to deflect the nanotube channel element to induce channel formation and one control electrode can be used to deflect the nanotube channel element in the opposite direction to prevent channel formation.
  • a nanotube transfer device circuit includes circuitry to ensure reliable switching of the nanotube channel element in a typical circuit application.
  • a signal shaping circuit is electrically coupled to the control structure.
  • the signal shaping circuit receives an input signal from other circuitry and provides a control signal representative of the input signal to the control structure.
  • a value of the control signal induces channel formation independent of the potential of the nanotube switching element.
  • the signal shaping circuit overdrives the control signal to a voltage above the supply voltage to predictably induce formation of the channel.
  • a second value of the control signal ensures the absence of channel formation independent of the potential of the nanotube switching element.
  • the signal shaping circuit shifts the input signal from a first range to a second range to provide the control signal, such that the state of channel formation is predictable at the endpoints of the second range.
  • control structure includes a first control electrode and a second control electrode disposed on opposite sides of the nanotube channel element
  • a control signal is provided to each electrode.
  • a second signal shaping circuit is electrically coupled to the control structure, and the second signal shaping circuit receives a second input signal and provides a second control signal representative of the second input signal to the second control electrode. A value of the second input signal induces unforming of the channel regardless of the potential of the nanotube switching element.
  • One advantage of certain embodiments is to provide an alternative to FET transfer devices that are becoming very difficult to scale.
  • FET transfer devices have increasing problems with leakage currents because threshold voltages do not scale well.
  • the transfer device of various embodiments of the present invention has low capacitances, no forward voltage drop, high speed and low power operation. These devices can also be used with complementary carbon nanotube (CCNT) logic devices as part of a nanotube CCNT logic family.
  • CCNT complementary carbon nanotube
  • FIG. 1 a is a side cross-sectional view of a nanotube transfer device according to an embodiment of the present invention
  • FIG. 1 b is a top plan view or layout view of a nanotube transfer device according to an embodiment of the present invention
  • FIG. 2 a is a schematic representation of the nanotube transfer device of FIG. 1 a;
  • FIG. 2 b is a schematic representation of the nanotube transfer device of FIG. 1 a;
  • FIG. 2 c is a schematic used to calculate the amount of input voltage coupled to the nanotube channel element
  • FIG. 2 d is a table showing representative values for the electrical parameters in FIG. 2 b;
  • FIG. 3 is a schematic representation of a nanotube transfer device circuit according to an embodiment of the present invention.
  • FIGS. 4 a - c are graphs of operating voltages in the nanotube transfer device circuit of FIG. 3 ;
  • FIG. 5 is a schematic representation of a nanotube transfer device circuit according to an embodiment of the present invention.
  • FIGS. 6 a - c are graphs of operating voltages in the nanotube transfer device circuit of FIG. 5 ;
  • FIG. 7 a is a side cross-sectional view of a nanotube transfer device according an embodiment of the present invention.
  • FIG. 7 b is a top plan view or layout view of a nanotube transfer device according to an embodiment of the present invention.
  • FIG. 8 a is a schematic representation of the nanotube transfer device of FIG. 7 a;
  • FIG. 8 b is a schematic representation of the nanotube transfer device of FIG. 7 a;
  • FIG. 8 c is a schematic used to calculate the amount of input voltage coupled to the nanotube channel element
  • FIG. 8 d is a table showing representative values for the electrical parameters in FIG. 8 b;
  • FIG. 9 is a schematic representation of a nanotube transfer device circuit according to an embodiment of the invention.
  • FIGS. 10 a - d are graphs of operating voltage in the nanotube transfer device circuit of FIG. 9 ;
  • FIG. 11 is a schematic representation of a nanotube transfer device circuit according to an embodiment of the invention.
  • FIGS. 12 a - d are graphs of operating voltages in the nanotube transfer device of FIG. 11 .
  • the invention provides nanotube transfer devices that controllably form a nanotube-based electrically conductive channel between a first node and a second node under the control of a control node, and also provides electrical circuits incorporating such nanotube transfer devices.
  • the electrical potential at the control node induces a nanotube channel element to deflect into contact with or away from an electrode at each node.
  • Each output node may be connected to an arbitrary network of electrical components.
  • electrical circuits are designed to ensure proper switching of nanotube transfer devices interconnected with arbitrary circuits.
  • the nanotube transfer device may be volatile or non-volatile. In preferred embodiments, the nanotube transfer device is a three-terminal device or a four-terminal device.
  • the nanotube transfer device of various embodiments can be interconnected with other nanotube transfer devices, nanotube-based logic circuits, nanotube switching devices (for example, those disclosed in application Ser. No. 10/918,085 and application Ser. No. 10/917,794) MOS transistors, and other electrical components to form electrical circuits implementing analog functions, digital logic circuits, memory devices, etc.
  • the nanotube transfer device of preferred embodiments has low capacitances, no forward voltage drop, high speed and low power operation. It is also radiation and heat tolerant. Electrical circuits shape the control signals such that the desired state of channel formation can be produced regardless of the potential of the nanotube channel element (within its operating range, typically defined by the power supply voltages).
  • the electrical circuits can be applied to different nanotube-based switch architectures to provide devices that can be connected to arbitrary, variable signals, while maintaining the desired switching characteristics.
  • FIG. 1 a is a cross-sectional view of a nanotube transfer device constructed according to one embodiment of the invention.
  • a nanotube channel element 102 is suspended and clamped by support structure 116 (including supports 116 a and 116 b ).
  • Transfer device 100 includes a control electrode 104 , a first output node 106 (including output electrodes 106 a and 106 b ) and a second output node 108 (including output electrodes 108 a and 108 b ).
  • the transfer device 100 is disposed on a substrate 101 and includes a lower portion and an upper portion.
  • the lower portion includes control electrode 104 , first output electrode 106 a and second output electrode 108 a .
  • Control electrode 104 , first output electrode 106 a and second output electrode 108 a are made of conductive material.
  • Input electrode 104 is also referred to herein as the control node or gate.
  • First output electrode 106 a and second output electrode 108 a are also referred to herein as the source node and drain node, respectively, for convenience.
  • the lower portion also includes an insulating layer 118 that insulates the electrodes from each other and also covers the upper face of control electrode 104 to isolate the nanotube channel element 102 from the control electrode 104 .
  • Nanotube channel element 102 is separated from the facing surface of insulator 118 by a gap height G 1 .
  • G 1 is defined by the respective thickness of input electrode 104 , insulator 118 and support structures 116 a and 116 b .
  • Nanotube channel element 102 is also separated from the facing surfaces of first output electrode 106 a and second output electrode 108 a by a gap height G 2 .
  • G 1 is greater than G 2 .
  • the upper portion includes a first opposing output electrode 106 b and a second opposing output electrode 108 b .
  • First opposing output electrode 106 b and second opposing output electrode 108 b are made of conductive material.
  • An insulating layer 114 insulates the electrodes 106 b and 108 b from each other and from the nanotube channel element 102 .
  • the nanotube channel element 102 is suspended by support structure 116 between the upper portion and the lower portion of transfer device 100 ; the nanotube channel element 102 is in spaced relation to electrodes 104 , 106 a , 106 b , 108 a and 108 b .
  • the spaced relationship is defined by G 1 and G 2 .
  • electrodes 106 b and 108 b are preferably provided to cancel the effects of undefined signals on electrodes 106 a and 108 a
  • electrodes 106 b and 108 b are preferably also spaced apart from nanotube channel element 102 by gap G 3 , which may be equal to gap G 2 .
  • gap G 3 may be equal to gap G 2 .
  • first output electrode 106 a and second output electrode 108 a are not insulated from the nanotube channel element.
  • the nanotube channel element 102 is subjected to various capacitive interactions with the electrodes of transfer device 100 .
  • the gap between nanotube channel element 102 and input electrode 104 defines a capacitance C 1 .
  • the gap between nanotube channel element 102 and output electrode 106 defines a second capacitance C 2 .
  • the gap between nanotube channel element 102 and output electrode 108 defines a third capacitance C 3 .
  • the nanotube channel element 102 is made of a porous fabric of nanotubes, e.g., single-walled carbon nanotubes.
  • each nanotube has homogenous chirality, being either a metallic or semiconductive species.
  • the fabric may contain a combination of nanotubes of different species, and the relative amounts may be tailorable, e.g., fabrics with higher concentrations of metallic species.
  • the nanotube channel element 102 is lithographically defined to a predetermined shape as explained in the patent references incorporated herein by reference.
  • the nanotube channel element of preferred embodiments is suspended by insulative supports 116 a and 116 b in spaced relation to the control electrode 104 and the output electrodes 106 a , 106 b , 108 a , 108 b .
  • the support is assumed to be an insulator such as SiO 2 .
  • the support can be made from any appropriate material, however.
  • the channel element width W NT 450 nm.
  • An input signal on electrode 104 activates the channel element 102 by applying an electrostatic force F E ⁇ V E 2 , where V E is a nanotube activation voltage.
  • Gap G 2 is selected such that channel element 102 contacts output nodes 106 and 108 when the input signal is activated.
  • the thickness of the insulating layers 118 and 114 is in the range of 5-30 nm. In certain embodiments, the suspended length to gap ration is about 5-15 to 1 for nonvolatile devices, and less than 5 for volatile devices. While other dimensions are possible, these dimensions are provided as representative ranges of dimensions for typical devices.
  • FIG. 1 b is a plan view or layout of nanotube transfer device 100 .
  • electrodes 106 a, b are electrically connected as depicted by the notation ‘X’. Electrodes 106 a, b collectively form a single output node 106 of device 100 . Likewise, electrodes 108 a, b are electrically connected as depicted by the ‘X’. Electrodes 108 a, b collectively form a single output node 108 of device 100 . Each output node 106 , 108 can respectively be connected to an electrical network.
  • a potential difference between the input electrode 104 and the nanotube channel element 102 causes the nanotube channel element 102 to be attracted to the input electrode 104 and causes deformation of the nanotube channel element to contact the lower portion of transfer device 100 . Placing an electrical potential on input electrode 104 induces deformation of the nanotube channel element 102 when the potential difference rises above a threshold voltage V T .
  • Input electrode 104 is insulated by a dielectric 118 . When nanotube channel element 102 deforms under electrical stimulation through input terminal 104 , it contacts output terminals 106 and 108 .
  • Nanotube transfer device 100 operates as follows. Nanotube transfer device 100 is in an OFF state when nanotube channel element is in the position shown in FIG. 1 a (or in any other position where the nanotube channel element 102 is not contacting both output electrode 106 a and output electrode 108 a ). In this state, there is no connection to the nanotube channel element 102 , which has a floating potential. Control electrode 104 and nanotube channel element 102 , however, are capacitively coupled (capacitance C 1 ). Nanotube channel element 102 is also capacitively coupled to output electrode 106 (capacitance C 2 ) and to output electrode 108 (capacitance C 3 ).
  • Nanotube transfer device 100 is in an ON state when nanotube channel element 102 is deflected towards the lower portion of transfer device 100 and contacts output electrode 106 a and output electrode 108 a at the same time. Nanotube channel element 102 is deflected by attractive electrostatic forces created by a potential difference between control electrode 104 and nanotube channel element 102 . When the potential difference exceeds a threshold value V T , the nanotube channel element 102 is attracted toward control electrode 104 and the fabric stretches and deflects until it contacts the lower portion of nanotube transfer device 100 .
  • Nanotube channel element 102 is not sensitive to the polarity of the signal on control electrode 104 , only the difference in potential. Since control electrode 104 is isolated from nanotube channel element 102 by insulating layer 118 , control electrode 104 does not mechanically or electrically contact nanotube channel element 102 . Nanotube channel element mechanically and electrically contacts output electrode 106 a and output electrode 108 a when it deflects. Nanotube channel element 102 provides a conductive path between output electrodes 106 a and 108 a in the ON state. Accordingly, the respective networks connected to each are electrically interconnected in the ON state. A control signal provided on control electrode 104 can be used to controllably form and unform the channel between output electrode 106 a and output electrode 108 a by controlling the position of nanotube channel element 102 .
  • the nanotube transfer device 100 may be made to behave as a non-volatile or a volatile transfer device.
  • nanotube channel element 102 deflects due to electrostatic forces, when the control signal is removed, van der Waals forces between the nanotube channel element 102 and the control electrode 104 tend to hold the nanotube channel element 102 in place.
  • the nanotube channel element 102 is under mechanical stress due to the deflection and a mechanical restoring force is also present. The restoring force tends to restore nanotube channel element 102 to the rest state shown in FIG. 1 a .
  • the device 100 will be volatile if the restoring force is greater than the van der Waals forces.
  • Device 100 will be non-volatile if the restoring force is not sufficient to overcome the van der Waals forces.
  • the device may be made to be non-volatile by proper selection of the length of the channel element relative to the gap G 1 . Length to gap ratios of greater than 5 and less than 15 are preferred for non-volatile devices; length to gap rations of less than 5 are preferred for volatile devices.
  • Output nodes 106 and 108 are constructed to include an isolation structure in which the operation of the channel element 102 , and thereby the state of the channel, is invariant to the state of either of output nodes 106 and 108 .
  • a floating output node 106 or 108 could have any potential between ground and the power supply voltage V DD in theory, determined by the network to which it is interconnected. Since the channel element 102 is electromechanically deflectable in response to electrostatically attractive forces, when the potential on an output node is sufficiently different relative to the potential of the nanotube channel element 102 , a floating output node could cause the nanotube channel element 102 to deflect unpredictably and interfere with the operation of the transfer device 100 .
  • this problem is addressed by providing an opposing output electrode that is insulated for each output electrode.
  • Output electrodes 106 b and 108 b are electrically connected to and effectively cancel out the floating potentials on output electrodes 106 a and 108 a .
  • nanotube channel element 102 is disposed between pairs of oppositely disposed electrodes 106 a, b and 108 a, b .
  • the corresponding electrodes are interconnected as shown in FIG. 1 b .
  • Each electrode in an output node 106 , 108 is at the same potential.
  • the gap distance between nanotube channel element 102 and output electrodes 106 a and 108 a and opposing output electrodes 106 b and 108 b is the same in the preferred embodiment.
  • the respective electrodes of each output node exert opposing electrostatic forces on nanotube channel element 102 regardless of the actual voltage present on each node.
  • the nanotube channel element 102 is thus isolated from the voltage present on each output node.
  • the deflection of nanotube channel element 102 and formation/unformation of the conductive channel can be reliably determined by the signal provided on control electrode 104 .
  • FIG. 2 a is a schematic representation of nanotube transfer device 100 .
  • Nanotube transfer device 100 is modeled in terms of equivalent resistances and capacitances.
  • nanotube transfer device 100 In the open or OFF state, nanotube transfer device 100 includes a first variable capacitance C 1 between nanotube switching element 102 and input electrode 104 , second capacitance C 2 between nanotube switching element 102 and first output electrode 106 , and third capacitance C 3 between nanotube switching element 102 and second output electrode 108 .
  • nanotube transfer device 100 In the closed or ON state, includes the C 1 and also includes a first resistance R 1 between the first output electrode 106 and the nanotube switching element 102 and a second resistance R 2 between the second output electrode 108 and the nanotube switching element 102 .
  • FIG. 2 b is a transfer device equivalent circuit (schematic) derived from the schematic representation of FIG. 2 a .
  • FIG. 2 c is a schematic, derived from the schematic of FIG. 2 a , used to calculate the amount of input voltage coupled to the nanotube layer.
  • FIG. 2 d provides exemplary values for the electrical variables in FIGS. 2 a, b, c in one embodiment of the present invention.
  • the impedance at output electrodes 106 and 108 is small compared to the impedance associated with C 2 and C 3 .
  • the voltage on input electrode 104 V in must be greater than about 0.4 V in the OFF state.
  • the voltage on input electrode 104 must be greater than the potential of the nanotube channel element 102 by at least the threshold voltage V T .
  • input electrode 104 must be overdriven to a value sufficient to guarantee that the nanotube channel element 102 deforms regardless of its floating potential.
  • the transition voltage ⁇ V on the input terminal 104 is partially coupled to nanotube channel element 102 during switching.
  • V NT As ⁇ V increases, V NT also increases by a proportional amount.
  • the network shown in FIG. 2 c is used to estimate the coupling voltage.
  • the voltage V in applied to terminal 104 is distributed between input capacitance C 1 and capacitances C 2 and C 3 in parallel, as illustrated by the equivalent circuit in FIG. 2 c , resulting in approximately 15% of the ⁇ V coupling to nanotube channel element 102 .
  • V in at input terminal 104 only increases by 0.85 ⁇ V, the relative voltage between input electrode 104 and nanotube channel element 102 .
  • FIG. 3 is a schematic illustration of a nanotube-based transfer device circuit 300 .
  • Transfer device circuit 300 includes nanotube switching element 100 and a voltage step-up converter 310 .
  • Voltage step-up converter shifts the input range of V in to the desired voltage range to ensure proper switching of nanotube switching element 100 when connected to arbitrary networks at output terminal 106 and output terminal 108 .
  • V DD is 1.0 V.
  • the minimum V in is set to 0.5 V.
  • the maximum V in must be sufficient to be 0.6 greater than V NT , while factoring in coupling. Maximum V in is determined as follows.
  • V in V in (min)+ ⁇ V
  • V NT (max) 1.0 V+ 0.15 ⁇ V
  • V in ⁇ V NT (max)> 0.6 V
  • V in (max) 1.8 V.
  • Voltage step-up converter can be implemented using any one of a variety of known techniques and circuit designs.
  • Nanotube switching element 100 switches OFF when V in falls to about 0.5 V. By that point, the potential difference between V in and V NT falls below V T , or 0.6 V. The nanotube channel element 102 switches off due to the mechanical restoring forces.
  • FIGS. 4 a - c illustrate the respective voltages in transfer device 300 as it switches between the ON and OFF states.
  • V in transitions from 0.5 V to 1.8 V back to 0.5 V.
  • V O1 and V O2 are initially independent, determined by the respective networks they are connected to.
  • the output electrodes 106 and 108 are connected by nanotube channel element 104 and are at approximately the same potential. There may be a small potential drop between the outputs 106 and 108 depending on the nanotube resistance.
  • the voltage capacitively coupled to the channel element 102 varies with changes in V O1 and V O2 , with a maximum range of 0.85 volts determined by capacitance coupling ratios.
  • V O1 and V O2 are not necessarily equal, and may vary in magnitude from 0 to 1.0 volts.
  • V DD 1.0 V
  • FIG. 5 is a schematic representation of a nanotube-based transfer device circuit 500 according to another embodiment of the invention.
  • FIGS. 6 a - c illustrate the respective voltages in transfer device 500 as it switches between the ON and OFF states.
  • V in transitions from 1.0 V to 2.5 V back to 1.0 V.
  • the transfer device 500 is ON (or closed) only while V in is at its upper maximum value. When V in drops to its low value, the device turns OFF.
  • FIG. 7 a illustrates a cross-sectional view of a four-terminal nonvolatile nanotube transfer device 700 .
  • nanotube transfer device 700 includes a release electrode 120 in the upper portion of the device. Release electrode 120 is covered by insulating layer 114 and isolated from mechanical contact with nanotube channel element 102 . Control electrode 104 and release electrode 120 together form a control structure for transfer device 700 . Control electrode 104 and release electrode 120 are used to control the switching operation of transfer device 700 . Transfer device 700 is dimensioned to be a non-volatile device that retains its state even when power is interrupted or turned off. Release electrode 120 functions in a way similar to control electrode 104 but is preferably connected to a complementary control signal.
  • nanotube channel element 102 When nanotube channel element 102 is deflected by a control signal V in provided on control electrode 104 , nanotube channel element 102 will remain deflected even after the control signal returns to an OFF value or when power is interrupted, etc.
  • a second control signal V R provided on release electrode 120 induces deflection of nanotube channel element 102 away from the lower portion and output electrodes 106 a and 108 a and toward the upper portion, including output electrodes 106 b and 108 b and release electrode 120 , all of which are insulated by dielectric layer 114 . Consequently, activation of the release electrode 120 to a sufficient potential causes nanotube transfer device 700 to “reset” to the OFF state.
  • a narrow input pulse of V in applied to control electrode 104 activates the transfer device, and van der Waals forces hold the transfer device in the closed position.
  • a narrow pulse applied to release electrode 120 releases the transfer device.
  • the transfer device does not require the activation voltage to remain on the input terminal. Since at any given time, the transfer device 700 should be in a known state ON or OFF, for correct operation of transfer device 700 in logical circuits, it is preferred that the control signal provided on release electrode 120 is complementary to the signal provided on control electrode 104 . In switching network applications, however, the device may be turned OFF only when the network interconnections are reset; in this case, the release signal might not be complementary to the control signal at all times. For example, if control signal and release signals are both at the same voltage, ground (zero volts) for example, then the state of transfer device 700 remains unchanged (ON or OFF) independent of the values of output voltages O 1 and O 2 .
  • FIG. 7 b illustrates a layout view of the four-terminal non-volatile nanotube switching element 700 .
  • output electrodes 106 a and 106 b are electrically connected forming a first output node 106 and output electrodes 108 a and 108 b are also electrically connected forming a second output node 108 .
  • FIG. 8 a is a schematic representation of nanotube transfer device 700 .
  • Nanotube transfer device 700 is modeled in terms of equivalent resistances and capacitances.
  • nanotube transfer device 700 includes a first variable capacitance C 1 between nanotube switching element 102 and control electrode 104 , second capacitance C 2 between nanotube switching element 102 and first output electrode 106 a , third capacitance C 3 between nanotube switching element 102 and second output electrode 108 a , and fourth variable capacitance C 4 between nanotube switching element 102 and release electrode 120 .
  • nanotube transfer device 100 includes the capacitance C 1 , a first resistance R 1 and a second resistance R 2 , and the capacitance C 4 .
  • FIG. 8 b is a transfer device equivalent circuit (schematic) derived from the schematic representation of FIG. 8 a .
  • FIG. 8 c is a schematic, derived from the schematic of FIG. 8 a , used to calculate the amount of input voltage coupled to the nanotube layer. Less than 10% of the input voltage couples to the nanotube channel element.
  • FIG. 8 d provides assumptions and exemplary values for the electrical parameters in FIGS. 8 a, b, c , in one embodiment of the present invention. The calculations are also based on 10 nanotubes for each transfer device, and a fabric fill of 6% (void of 94%).
  • FIG. 9 illustrates a nanotube transfer device circuit 900 incorporating nanotube transfer device 700 and signal step-up circuitry to shift the control and release input signals V in and V R to a range where correct operation of nanotube transfer device 700 can be expected.
  • Nanotube transfer device circuit 900 includes nanotube 700 (shown by its electrical equivalent representation) and a control signal step-up converter 310 and a release signal step-up converter 910 . Operation of control signal step-up converter 310 has been described above. Release signal step-up converter 910 operates similarly with respect to a release signal provided to release electrode 120 .
  • Release signal step-up converter 910 shifts an input signal V R to an operating range wherein operation of nanotube transfer device 700 can be reliably controlled, and overdrives the release electrode 120 in order to ensure that nanotube channel element 102 is released and returns to an OFF state when the release signal is asserted, since the actual potential of nanotube channel element can vary from 0 V to V DD .
  • release signal step-up converter 910 shifts the input signal from a range of 0 V to V DD , to a range of 0.5 V to 1.8 V.
  • FIGS. 10 c and 10 d illustrate waveforms that are the same as those of FIGS. 3 b and 3 c , respectively.
  • the maximum voltages increase because of the higher 1.0 V reference voltage to signal step-up converter 510 .
  • Signal step-up converter 1110 here has an output range of 1.0 V to 2.3 V.
  • FIG. 12 b illustrates V R applied to de-activate (open) the transfer device 700 .
  • FIGS. 12 c and 12 d waveforms are the same as those of FIGS. 10 c and 10 d respectively.
  • the voltage step-up technique described herein may also be applied to other nanotube-based switch architectures.
  • Providing signal conditioning circuitry to shift the operating range of one or more control signals ensures that the desired state of channel formation is attained regardless of the electrical potential of the nanotube channel element (within its operating range).
  • This technique enables coupling of arbitrary, variable signals to a transfer node of a nanotube-based switching device, while maintaining desired switching characteristics.
  • This technique may also be applied, for example, to the devices disclosed in application Ser. Nos. 10/917,794 and 10/918,085, which are incorporated herein by reference.
  • Devices 100 , 700 can be used to implement a wide variety of circuits, logic circuits, memory circuits, etc. It is contemplated that devices 100 , 700 can be used to replace MOS field effect transfer devices and can be used on a single substrate integrated with MOS technology or in pure nanotube-based logic (nanologic) designs. The examples given herein are based on a projected 90 nm technology node, however, it will be appreciated that other technologies are within the scope of the present invention.
  • the transfer device according to aspects of the invention can be used in many applications. For example, it could be used to construct an NRAM memory array of very small cell size.
  • the transfer device 100 , 700 is such a versatile active electrical element.
  • such transfer devices 100 , 700 in product chips can be used to repeatedly change on-chip generated timings and voltages after fabrication at the wafer level, or after chip assembly at the module, card, or system level. This can be done at the factory, or remotely in field locations. Such usage can enhance product yield, lower power, improve performance, and enhance reliability in a wide variety of products.
  • Devices 100 and 700 may also be used to interconnect various networks as well.

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