[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

US6706205B2 - Semiconductor processing article - Google Patents

Semiconductor processing article Download PDF

Info

Publication number
US6706205B2
US6706205B2 US10/067,380 US6738002A US6706205B2 US 6706205 B2 US6706205 B2 US 6706205B2 US 6738002 A US6738002 A US 6738002A US 6706205 B2 US6706205 B2 US 6706205B2
Authority
US
United States
Prior art keywords
article
roughening
furnace
mechanically
microns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime, expires
Application number
US10/067,380
Other versions
US20020094686A1 (en
Inventor
Thomas Bert Gorczyca
Udo Heinz Retzlaff
Stephan Popp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Momentive Performance Materials Quartz Inc
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority to US10/067,380 priority Critical patent/US6706205B2/en
Publication of US20020094686A1 publication Critical patent/US20020094686A1/en
Publication of US6706205B2 publication Critical patent/US6706205B2/en
Application granted granted Critical
Assigned to THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL TRUSTEE reassignment THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL TRUSTEE SECURITY AGREEMENT Assignors: JUNIPER BOND HOLDINGS I LLC, JUNIPER BOND HOLDINGS II LLC, JUNIPER BOND HOLDINGS III LLC, JUNIPER BOND HOLDINGS IV LLC, MOMENTIVE PERFORMANCE MATERIALS CHINA SPV INC., MOMENTIVE PERFORMANCE MATERIALS QUARTZ, INC., MOMENTIVE PERFORMANCE MATERIALS SOUTH AMERICA INC., MOMENTIVE PERFORMANCE MATERIALS USA INC., MOMENTIVE PERFORMANCE MATERIALS WORLDWIDE INC., MOMENTIVE PERFORMANCE MATERIALS, INC., MPM SILICONES, LLC
Assigned to BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE reassignment BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE SECURITY AGREEMENT Assignors: MOMENTIVE PERFORMANCE MATERIALS INC
Assigned to BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE reassignment BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE PATENT SECURITY AGREEMENT Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to JPMORGAN CHASE BANK, N.A. reassignment JPMORGAN CHASE BANK, N.A. SECURITY AGREEMENT Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT reassignment THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT reassignment THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Assignors: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Assignors: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
Assigned to BOKF, NA, AS SUCCESSOR COLLATERAL AGENT reassignment BOKF, NA, AS SUCCESSOR COLLATERAL AGENT NOTICE OF CHANGE OF COLLATERAL AGENT - ASSIGNMENT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY - SECOND LIEN Assignors: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT
Assigned to BOKF, NA, AS SUCCESSOR COLLATERAL AGENT reassignment BOKF, NA, AS SUCCESSOR COLLATERAL AGENT NOTICE OF CHANGE OF COLLATERAL AGENT - ASSIGNMENT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Assignors: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BOKF, NA
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BOKF, NA
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Assignors: JPMORGAN CHASE BANK, N.A.
Assigned to BNP PARIBAS, AS ADMINISTRATIVE AGENT reassignment BNP PARIBAS, AS ADMINISTRATIVE AGENT FIRST LIEN TERM LOAN PATENT AGREEMENT Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to KOOKMIN BANK, NEW YORK BRANCH, AS ADMINISTRATIVE AGENT reassignment KOOKMIN BANK, NEW YORK BRANCH, AS ADMINISTRATIVE AGENT SECOND LIEN TERM LOAN PATENT AGREEMENT Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to CITIBANK, N.A., AS ADMINISTRATIVE AGENT reassignment CITIBANK, N.A., AS ADMINISTRATIVE AGENT ABL PATENT AGREEMENT Assignors: MOMENTIVE PERFORMANCE MATERIALS GMBH, MOMENTIVE PERFORMANCE MATERIALS INC.
Adjusted expiration legal-status Critical
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT
Assigned to MOMENTIVE PERFORMANCE MATERIALS QUARTZ, INC. reassignment MOMENTIVE PERFORMANCE MATERIALS QUARTZ, INC. NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). Assignors: MOMENTIVE PERFORMANCE MATERIALS INC.
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: KOOKMIN BANK NEW YORK
Assigned to MOMENTIVE PERFORMANCE MATERIALS INC. reassignment MOMENTIVE PERFORMANCE MATERIALS INC. TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Assignors: BNP PARIBAS
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00Glasses, glazes or enamels with special properties
    • C03C2204/08Glass having a rough surface

Definitions

  • the present invention relates to a semiconductor processing article and to a system to process semiconductors in a low pressure chemical vapor deposition furnace.
  • Low pressure chemical vapor deposition is a film forming process for the production of semiconductor devices.
  • the process is used in the formation of layers such as silicon nitride, silicon dioxide and polysilicon on a silicon wafer substrate.
  • Low pressure techniques for example in the range of 0.5-3 torr have advantages in terms of uniformity in processing.
  • a substrate is placed in a reaction chamber, which is heated and brought to a low pressure state.
  • a reaction gas is introduced into the chamber, and reaction material is deposited on the substrate either by reaction or by thermal decomposition of the reaction gas.
  • the deposition is typically conducted at temperatures between 550° C. and 950° C., at a pressure of about 1 torr using processing articles that include, for example, a liner, process tube, shield, baffle, paddle, cantilever arm, carrier or boat made out of fused quartz. Since the processing articles are at the same temperature as the wafer substrate, the articles are coated at every run with a layer as thick as the layer deposited on the substrate. After many runs, each article is covered with a thick film build-up. The film build-up causes a stress from the coefficient of thermal expansion (CTE) difference between silicon (2.9 ppm/° C.) or silicon nitride (5.0 ppm/° C.) and quartz (0.5 ppm/° C.).
  • CTE coefficient of thermal expansion
  • the processing articles can be cleaned to remove film build-up.
  • the articles are cleaned after a build-up of a film 5-10 microns thick. Cleaning the articles is time consuming and requires shut down of the LPCVD processing equipment. Also, frequent cleaning can lengthen micro cracks in the quartz. Micro cracks promote brittleness and contribute to part failure. There is a need to eliminate the adverse effects of film build-up on LPCVD furnace processing articles without increased cleaning.
  • the invention relates to a semiconductor processing article that is characterized by extended useful life.
  • the article can be used in a semiconductor furnace system, particularly in a LPCVD furnace for prolonged periods without requiring cleaning to remove build-up film.
  • the semiconductor processing article typically comprises a quartz body characterized by a surface roughness having a first component with an average deviation from a first mean surface of about 2.5 to 50 microns, and a second component with an average deviation from a second mean surface of about 0.25 to 5 microns.
  • the processing article is prepared for use in the furnace by mechanically roughening and chemically roughening the quartz surface of the article.
  • the invention in another aspect, relates to a heat treatment process, comprising preparing a quartz processing article by mechanically blasting and chemically etching the surface of the article.
  • the article is then installed into a processing chamber of a chemical vapor deposition furnace.
  • a substrate to be treated is loaded into the processing chamber and a treatment gas is supplied into the processing chamber to form a film on the substrate.
  • FIG. 1 is a schematic representation partially cut-away, of an exemplary processing system and method for producing semiconductor wafers
  • FIG. 2 is a microphotograph of a quartz sample after sand blasting
  • FIG. 3 is a microphotograph of the same quartz sample after sand blasting and chemical etching
  • FIG. 4 is a cross section microphotograph of a sand blasted quartz sample.
  • FIG. 5 is a cross section microphotograph of the sand blasted sample of FIG. 4 after HF chemically etching.
  • the quartz surface of a processing article is treated to render the surface less prone to surface cracking and spalling and to allow for extended use of the article in an LPCVD system before particles are formed indicating cleaning is necessary.
  • the quartz surface is roughened by both mechanical and chemical means. The mechanical step provides topography extending over large distances on the quartz. The chemical step imposes a much finer surface topography on the quartz superimposed over the mechanically roughened portion.
  • FIG. 1 is a schematic representation of a processing system and method of preparing a quartz processing article for use with or in an LPCVD furnace for applying a film to produce a semiconductor wafer.
  • FIG. 1 shows system 1 , which includes a sand blasting apparatus 2 , a chemical etch apparatus 3 and an LPCVD deposition furnace 4 .
  • the sand blasting apparatus 2 , chemical etch apparatus 3 , and chemical vapor deposition furnace 4 are represented by icons.
  • the icons represent any apparatus that can be included in the system.
  • the icons are intended to broadly represent the invention and are not intended to represent specific apparatus or processing steps.
  • the LPCVD deposition furnace 4 includes a processing chamber 5 to maintain a reduced pressure having at least one gas inlet 6 to provide a reactive gas mixture therein and at least one exhaust outlet 7 .
  • a support 8 comprises a quartz processing article such as a boat that has been prepared according to an embodiment of the present invention. The support 8 is positioned within the chamber 5 , and a substrate 9 to be treated is shown positioned on the support 8 .
  • FIG. 1 represents both a process of initially treating quartz articles prior to installation within or use with an LPCVD furnace and to a cleaning and treating of quartz articles for reinstallation in or reuse with an LPCVD furnace as hereinafter described.
  • the first mechanically roughening step can include mechanically blasting the surface of the processing article.
  • This step can be carried out by blast abrading, a process in which an abrasive is directed at high velocity against a surface being cleaned.
  • blast abrading a process in which an abrasive is directed at high velocity against a surface being cleaned.
  • sand blasting cleans an object by blast abrading in which steel grit, sand, or other abrasive is blown against the object to produce a roughened surface.
  • the abrasive is propelled by a fluid against the solid surface of the article to provide a first textured surface.
  • the quartz article is roughened by sand blasting using silicon carbide, alumina or silica grit or other suitable abrasive material with size ranges between about 1 and about and 800 microns, desirably between about 5 and about 400 microns and preferably between about 50 and about 150 microns.
  • Standard sand blasting equipment comprises a pressure vessel or blasting pot to hold particles of abrasive connected to a source of compressed air by means of a hose.
  • the vessel has a means of metering the abrasive from the blast pot, which operates at a pressure that is the same or slightly higher than the conveying hose pressure.
  • the sand/compressed air mixture is transported to a nozzle where the sand particles are accelerated and directed toward the processing article.
  • the parameters for controlling the sand blasting process include the grit type, the pressure applied to the grit media, the distance between the sand jet nozzle and the article to be blasted, and the angle used for directing the grit to the article surface.
  • the roughening air pressure can be controlled between about 10 and about 500 psi, desirably between about 10 and about 250 psi and preferably between about 15 and about 150 psi.
  • the spray nozzle can be directed with an angle of incidence to the article surface between about 1 and about 90 degrees, desirably between about 30 and about 90 degrees and preferably between about 45 and about 90 degrees, at a distance between about 0.1 and about 300 cm, desirably between about 1 and about 100 cm and preferably between about 5 and about 20 cm.
  • the time of contact for the mechanical roughening with grit onto a specific area of an article being roughened can vary between more than 0 to 500 seconds, desirably between 1 to 30 seconds and preferably between 2 to 10 seconds.
  • Flow rates of the sand or other blast media are determined by the size of the equipment.
  • Sand blasting apparatus typically employ media flow rates of 20-30 lbs/min. About 1.2 lbs of sand are typically used with about 1.0 lb of air, thus yielding a ratio of 1.20.
  • the sand blasting step can be controlled within the parameters of conditions and selected grit to provide both smooth and roughened areas of quartz surface over distances of 1 to 2 mm.
  • the surface can be quickly abraded to a desired surface specification by using a combination of higher air pressure such as 150 psi, an incidence angle near 90 degrees and a close nozzle to article distance such as 1 cm. Lower pressure such as 15 psi, an angle of incidence of 30 degrees, and a nozzle to article distance of 10 cm abrades the surface more slowly and will provide a surface with both roughened portions and smooth, non abraded portions.
  • a next step the article is subjected to a chemical roughening step in apparatus 3 .
  • micro cracks in the quartz that occurred during the mechanical roughening step are reduced or eliminated.
  • chemical etching is used to open up or round out the micro cracks, leaving a surface with trenches that replace the cracks.
  • FIG. 4 shows cracks caused by mechanically roughening which appear as breaks in the quartz glassy structure propagating from the treated surface into the quartz for distances up to 200 micrometers.
  • the width of the cracks typically is less than or equal to 1 micrometer.
  • trenches are left when the cracks are subjected to chemical etching.
  • the etchant enters the crack, and typically it isotropically etches in all directions, widening the crack and rounding out its tip to terminate further crack propagation.
  • the shape of the trench prevents further propagation into the quartz bulk when surface stress is applied during the LPCVD coating step.
  • the width of the trench after chemical etching depends on the amount of time the crack is exposed to etchant and the rate at which the etchant dissolves quartz. For example, a water solution containing 10% hydrofluoric acid applied for 30 minutes removes about 3 microns of quartz and forms trenches approximately 6 microns wide.
  • the trenches can be partially filled by applying a silicon film.
  • the silicon can be converted to silicon oxide, which expands in volume to completely fill the trench.
  • the etching can be accomplished by any conventional etching technique such as exposing the processing article to etching acids or subjecting the article to a plasma etching.
  • the processing article can be placed in a suitable plasma etching machine such an IPC series 4000, manufactured by International Plasma Corporation.
  • the processing article is placed in the work chamber of the plasma etching machine and the chamber is then evacuated.
  • the processing article is preheated in the chamber in a nitrogen plasma formed at an RF power from about 100 watts to about 200 watts of energy and from 0.5 torr to 0.6 torr pressure for a period of about 3 minutes to bring the temperature of the processing article to about 75° C.
  • This preheating step is practiced to bring the processing article up to the reaction temperature required for etching in a uniform manner.
  • the desired reaction temperature typically ranges from 65° C. to 85° C.
  • CF 4 including 4% oxygen by volume at a gas flow rate of from about 100 cc/minute to about 150 cc/minute is introduced, and a plasma is formed at an energy level of about 100 watts.
  • Pressure in the chamber is typically about 0.3 to 0.5 torr.
  • the plasma typically etches at a rate of from about 0.5 ⁇ 10 3 angstroms to about 1 ⁇ 10 3 angstroms per minute. Plasma etching is practiced for a sufficient time to provide a surface roughening or for about one to two minutes.
  • a new plasma of oxygen is initiated.
  • the RF power is from about 200 watts to about 400 watts. About 300 watts is preferred.
  • the gas flow rate is about 300 cc/minute of oxygen to obtain a chamber pressure of preferably about 1.6 torr. However, the chamber pressure may range from about 0.8 torr to 2.0 torr.
  • the plasma Upon completion of the etching, the plasma is turned off.
  • the chamber is evacuated, and a new plasma is formed of CF 4 and oxygen.
  • the processing article is then subjected to the plasma etchant for about one minute.
  • the plasma is turned off, the chamber brought again to atmospheric pressure, and the processing article is removed from the chamber.
  • the etching is conducted by subjecting the mechanically roughened quartz to an etching solution containing hydrofluoric acid with optional components of ammonium fluoride, acetic acid, water and dissolved silica.
  • the proportions of acids in this etching solution can vary from more than 0 to 70 vol % with the ammonium fluoride varying from 0 to 50 wt % and silica amounting to from 0 to 5 wt %.
  • Desirable solutions consist of 20 to 60 vol % hydrofluoric acid, 10 to 30 wt % ammonium fluoride, 20 to 50 vol % acetic acid and 0 to 2 wt % silica.
  • a preferred etching solution comprises 40 to 50 vol % hydrofluoric acid, 15 to 25 wt % ammonium fluoride, 30 to 40 vol % acetic acid and 0.1 wt % silica.
  • the quartz can be in contact with the preferred etching solution for a period between about 0.1 to 5 hours, desirably between about 0.2 to 2 hours and preferably between 0.5 to 1 hours.
  • the temperature of the etching solution can vary between 10° C. to 40° C. with a preferable temperature range between 15° C. to 25° C.
  • the quartz body is typically characterized by a surface roughness having a first component formed by the mechanical treatment and a second component, superimposed on the first component, formed by the chemical treatment.
  • the first and second components of the surface roughness can be described with reference to a mean surface.
  • the mean surface is typically defined as a line drawn through the surface profile in such a way that the area filled with material equals the unfilled area.
  • a first mean surface can be defined over a sample length along the surface of about 500 microns, for example, to characterize the surface deviation formed by the mechanical treatment.
  • a second mean surface can defined over a sample length along the surface of about 50 microns, for example, to characterize the surface deviation formed by the chemical treatment.
  • the surface roughness has a first component with peaks having a deviation from the first mean surface of about ⁇ 5 to ⁇ 100 microns, more typically about ⁇ 10 to ⁇ 50 microns, and a second component with peaks having a deviation from the second mean surface of about ⁇ 0.5 to ⁇ 10 microns, more typically about ⁇ 1 to ⁇ 5 microns.
  • the average deviation of the first component of the surface roughness from the first mean surface is typically between about 2.5 and 50 microns, more typically between about 5 and 25 microns.
  • the average deviation of the second component from the second mean surface is typically between about 0.25 and 5 microns, more typically between about 0.5 and 2.5 microns.
  • the process can include other steps to remove loosely adhering pieces on the quartz surface.
  • the surface can be ultrasonically cleaned or washed with distilled water and rinsed.
  • the surface can be cleaned by the application of a high pressure spray of water.
  • This step comprises spraying a high pressure water jet at the surface of the article to remove loosely adhering quartz pieces. Removal of adhering quartz pieces by this step reduces the possibility of introducing particles into the deposition chamber.
  • water pressure, size and shape of the spray jet, distance of the spray jet from the quartz surface, and the amount of time it impinges on the surface can be controlled, as is well known in the art, to remove all adhering pieces.
  • water was pressurized to 500 psi and sent through a fan type nozzle. This provides a water spray that expands from the nozzle at about a 45 degree angle.
  • the nozzle was held at a distance of 3 cm from the surface of the article for about 2 seconds.
  • Water pressures between 10 to 2000 psi can be used to provide a spray that exits the nozzle and expands to an angle between about 1 to about 90 degrees.
  • the process can be used for pretreating an article.
  • Pretreating herein means preparing an article that has not previously been utilized in or as part of an LPCVD furnace.
  • pretreating assures that deposited silicon film will firmly adhere to the quartz article.
  • the film does not flake or delaminate from the quartz substrate as readily as flakes and delaminations begin to occur with a non-pretreated roughened article.
  • an article that has been used with or as part of a LPCVD furnace can be prepared for further use with or as part of the furnace by an exemplary process of the invention.
  • the article can be treated when flaking and delaminating film indicate that the article should be cleaned.
  • the furnace can be dismantled and both articles used in connection with the furnace and articles used as part of the structure of the furnace can be prepared together for further use.
  • the invention comprises mechanically roughening and chemically roughening a surface of an article that is cycled into and out of the LPCVD furnace in processing cycles.
  • Such articles include boats, vessels, and cantilever arms, which are subjected to temperature change cycles with every cycle into and out of the furnace.
  • these articles are much more readily affected by the stress of silicon film build up. They require substantially more frequent cleaning than articles that are part of the furnace. Consequently, the present invention can be advantageous when used to prepare articles that are cycled into and out of the furnace.
  • the cantilever arm, carrier or boat that is used in connection with the furnace can be separately prepared for further use while the articles within the furnace can be separately cleaned in situ when cleaning is required.
  • the furnace can be disassembled and all articles prepared together for further use.
  • FIG. 2 is an electron microscope image of the sand blasted surface.
  • the article was subjected to a chemical etch consisting of 95 g (49% hydrofluoric acid solution), 35 g ammonium fluoride, and 71 g glacial acetic acid for 1 hour at 15° C. This treatment selectively etched approximately 6 microns to 8 microns of the quartz, leaving a finer surface roughening on the sample article as shown in FIG. 3 .
  • FIG. 2 and FIG. 3 show the quartz surface after mechanical roughening.
  • FIG. 2 and FIG. 3 show significant surface topography variation which will both increase adhesion and reduce stress from CTE mismatch between the quartz and a deposited film. Adhesion and stress reduction is further improved by chemically etching the quartz to further increase its topography but on a finer scale as shown in FIG. 3 .
  • the chemical treatment roughens areas like fracture faces and unroughened surface areas that were not affected by the mechanically roughening.
  • the combined roughening increases the amount of coatings that can be subsequently deposited on the quartz article before particle generation occurs and the article must be removed and cleaned.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

A semiconductor processing article is characterized by extended useful life. The article is used in a semiconductor furnace system, particularly in a low pressure chemical vapor deposition furnace for prolonged periods without requiring cleaning to remove build-up film. The semiconductor processing article is a quartz body characterized by a surface roughness having a first component with an average deviation from a first mean surface of about 2.5 to 50 microns, and a second component with an average deviation from a second mean surface of about 0.25 to 5 microns. The processing article is prepared for use in the furnace by mechanically blasting and chemically etching the surface of the article

Description

This application is a DIV of Ser. No. 09/340,793 filed Jun. 28, 1999 now U.S. Pat. No. 6,368,410.
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor processing article and to a system to process semiconductors in a low pressure chemical vapor deposition furnace.
Low pressure chemical vapor deposition (LPCVD) is a film forming process for the production of semiconductor devices. The process is used in the formation of layers such as silicon nitride, silicon dioxide and polysilicon on a silicon wafer substrate. Low pressure techniques, for example in the range of 0.5-3 torr have advantages in terms of uniformity in processing. Typically in the process, a substrate is placed in a reaction chamber, which is heated and brought to a low pressure state. A reaction gas is introduced into the chamber, and reaction material is deposited on the substrate either by reaction or by thermal decomposition of the reaction gas.
The deposition is typically conducted at temperatures between 550° C. and 950° C., at a pressure of about 1 torr using processing articles that include, for example, a liner, process tube, shield, baffle, paddle, cantilever arm, carrier or boat made out of fused quartz. Since the processing articles are at the same temperature as the wafer substrate, the articles are coated at every run with a layer as thick as the layer deposited on the substrate. After many runs, each article is covered with a thick film build-up. The film build-up causes a stress from the coefficient of thermal expansion (CTE) difference between silicon (2.9 ppm/° C.) or silicon nitride (5.0 ppm/° C.) and quartz (0.5 ppm/° C.). Eventually, this stress induces cracking in the surface of the quartz. Articles such as wafer carriers or boats and related cantilever arms are more prone to crack formation because they are cycled from the process chamber temperature to room temperature with each run to allow loading and unloading of wafers. Additionally, film buildup results in flakes that contaminate the semiconductor products and cause defects in the layers being formed. Unless the film deposited on each article is frequently removed, it will contaminate the substrate during processing, significantly degrading device yield.
The processing articles can be cleaned to remove film build-up. Typically, the articles are cleaned after a build-up of a film 5-10 microns thick. Cleaning the articles is time consuming and requires shut down of the LPCVD processing equipment. Also, frequent cleaning can lengthen micro cracks in the quartz. Micro cracks promote brittleness and contribute to part failure. There is a need to eliminate the adverse effects of film build-up on LPCVD furnace processing articles without increased cleaning.
SUMMARY OF THE INVENTION
The invention relates to a semiconductor processing article that is characterized by extended useful life. The article can be used in a semiconductor furnace system, particularly in a LPCVD furnace for prolonged periods without requiring cleaning to remove build-up film. The semiconductor processing article typically comprises a quartz body characterized by a surface roughness having a first component with an average deviation from a first mean surface of about 2.5 to 50 microns, and a second component with an average deviation from a second mean surface of about 0.25 to 5 microns. The processing article is prepared for use in the furnace by mechanically roughening and chemically roughening the quartz surface of the article.
In another aspect, the invention relates to a heat treatment process, comprising preparing a quartz processing article by mechanically blasting and chemically etching the surface of the article. The article is then installed into a processing chamber of a chemical vapor deposition furnace. A substrate to be treated is loaded into the processing chamber and a treatment gas is supplied into the processing chamber to form a film on the substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic representation partially cut-away, of an exemplary processing system and method for producing semiconductor wafers;
FIG. 2 is a microphotograph of a quartz sample after sand blasting;
FIG. 3 is a microphotograph of the same quartz sample after sand blasting and chemical etching;
FIG. 4 is a cross section microphotograph of a sand blasted quartz sample; and
FIG. 5 is a cross section microphotograph of the sand blasted sample of FIG. 4 after HF chemically etching.
DETAILED DESCRIPTION OF THE INVENTION
According to an exemplary embodiment of the present invention, the quartz surface of a processing article is treated to render the surface less prone to surface cracking and spalling and to allow for extended use of the article in an LPCVD system before particles are formed indicating cleaning is necessary. According to an exemplary embodiment of the invention, the quartz surface is roughened by both mechanical and chemical means. The mechanical step provides topography extending over large distances on the quartz. The chemical step imposes a much finer surface topography on the quartz superimposed over the mechanically roughened portion.
These and other features will become apparent from the following drawings and detailed discussion, which by way of example without limitation describe embodiments of the present invention.
FIG. 1 is a schematic representation of a processing system and method of preparing a quartz processing article for use with or in an LPCVD furnace for applying a film to produce a semiconductor wafer. FIG. 1 shows system 1, which includes a sand blasting apparatus 2, a chemical etch apparatus 3 and an LPCVD deposition furnace 4. The sand blasting apparatus 2, chemical etch apparatus 3, and chemical vapor deposition furnace 4 are represented by icons. The icons represent any apparatus that can be included in the system. The icons are intended to broadly represent the invention and are not intended to represent specific apparatus or processing steps.
The LPCVD deposition furnace 4 includes a processing chamber 5 to maintain a reduced pressure having at least one gas inlet 6 to provide a reactive gas mixture therein and at least one exhaust outlet 7. A support 8 comprises a quartz processing article such as a boat that has been prepared according to an embodiment of the present invention. The support 8 is positioned within the chamber 5, and a substrate 9 to be treated is shown positioned on the support 8.
The support 8 is processed by mechanically roughening a surface of the article at 2 and chemically roughening the surface at 3. FIG. 1 represents both a process of initially treating quartz articles prior to installation within or use with an LPCVD furnace and to a cleaning and treating of quartz articles for reinstallation in or reuse with an LPCVD furnace as hereinafter described.
The first mechanically roughening step can include mechanically blasting the surface of the processing article. This step can be carried out by blast abrading, a process in which an abrasive is directed at high velocity against a surface being cleaned. For example, sand blasting cleans an object by blast abrading in which steel grit, sand, or other abrasive is blown against the object to produce a roughened surface. The abrasive is propelled by a fluid against the solid surface of the article to provide a first textured surface.
Preferably, the quartz article is roughened by sand blasting using silicon carbide, alumina or silica grit or other suitable abrasive material with size ranges between about 1 and about and 800 microns, desirably between about 5 and about 400 microns and preferably between about 50 and about 150 microns. Standard sand blasting equipment comprises a pressure vessel or blasting pot to hold particles of abrasive connected to a source of compressed air by means of a hose. The vessel has a means of metering the abrasive from the blast pot, which operates at a pressure that is the same or slightly higher than the conveying hose pressure. The sand/compressed air mixture is transported to a nozzle where the sand particles are accelerated and directed toward the processing article.
The parameters for controlling the sand blasting process include the grit type, the pressure applied to the grit media, the distance between the sand jet nozzle and the article to be blasted, and the angle used for directing the grit to the article surface. According to exemplary embodiments of the invention, the roughening air pressure can be controlled between about 10 and about 500 psi, desirably between about 10 and about 250 psi and preferably between about 15 and about 150 psi. The spray nozzle can be directed with an angle of incidence to the article surface between about 1 and about 90 degrees, desirably between about 30 and about 90 degrees and preferably between about 45 and about 90 degrees, at a distance between about 0.1 and about 300 cm, desirably between about 1 and about 100 cm and preferably between about 5 and about 20 cm. The time of contact for the mechanical roughening with grit onto a specific area of an article being roughened can vary between more than 0 to 500 seconds, desirably between 1 to 30 seconds and preferably between 2 to 10 seconds.
Flow rates of the sand or other blast media are determined by the size of the equipment. Sand blasting apparatus typically employ media flow rates of 20-30 lbs/min. About 1.2 lbs of sand are typically used with about 1.0 lb of air, thus yielding a ratio of 1.20.
The sand blasting step can be controlled within the parameters of conditions and selected grit to provide both smooth and roughened areas of quartz surface over distances of 1 to 2 mm. For example, the surface can be quickly abraded to a desired surface specification by using a combination of higher air pressure such as 150 psi, an incidence angle near 90 degrees and a close nozzle to article distance such as 1 cm. Lower pressure such as 15 psi, an angle of incidence of 30 degrees, and a nozzle to article distance of 10 cm abrades the surface more slowly and will provide a surface with both roughened portions and smooth, non abraded portions. Also, less hard grit such as silica grit (hardness equals approximately 6 Mohs) instead of a harder grit such as silicon carbide (hardness equals approximately 9.2 Mohs) results in a lower rate of surface abrasion.
In a next step, the article is subjected to a chemical roughening step in apparatus 3. In this step, micro cracks in the quartz that occurred during the mechanical roughening step are reduced or eliminated. In this step, chemical etching is used to open up or round out the micro cracks, leaving a surface with trenches that replace the cracks. FIG. 4 shows cracks caused by mechanically roughening which appear as breaks in the quartz glassy structure propagating from the treated surface into the quartz for distances up to 200 micrometers. The width of the cracks typically is less than or equal to 1 micrometer. As shown in FIG. 5, trenches are left when the cracks are subjected to chemical etching. The etchant enters the crack, and typically it isotropically etches in all directions, widening the crack and rounding out its tip to terminate further crack propagation. The shape of the trench prevents further propagation into the quartz bulk when surface stress is applied during the LPCVD coating step. The width of the trench after chemical etching depends on the amount of time the crack is exposed to etchant and the rate at which the etchant dissolves quartz. For example, a water solution containing 10% hydrofluoric acid applied for 30 minutes removes about 3 microns of quartz and forms trenches approximately 6 microns wide.
According to one embodiment of the invention, the trenches can be partially filled by applying a silicon film. The silicon can be converted to silicon oxide, which expands in volume to completely fill the trench.
The etching can be accomplished by any conventional etching technique such as exposing the processing article to etching acids or subjecting the article to a plasma etching. For example, the processing article can be placed in a suitable plasma etching machine such an IPC series 4000, manufactured by International Plasma Corporation. The processing article is placed in the work chamber of the plasma etching machine and the chamber is then evacuated. The processing article is preheated in the chamber in a nitrogen plasma formed at an RF power from about 100 watts to about 200 watts of energy and from 0.5 torr to 0.6 torr pressure for a period of about 3 minutes to bring the temperature of the processing article to about 75° C. This preheating step is practiced to bring the processing article up to the reaction temperature required for etching in a uniform manner. The desired reaction temperature typically ranges from 65° C. to 85° C.
After preheating the processing article, CF4 including 4% oxygen by volume at a gas flow rate of from about 100 cc/minute to about 150 cc/minute, is introduced, and a plasma is formed at an energy level of about 100 watts. Pressure in the chamber is typically about 0.3 to 0.5 torr. The plasma typically etches at a rate of from about 0.5×103 angstroms to about 1×103 angstroms per minute. Plasma etching is practiced for a sufficient time to provide a surface roughening or for about one to two minutes.
A new plasma of oxygen is initiated. The RF power is from about 200 watts to about 400 watts. About 300 watts is preferred. The gas flow rate is about 300 cc/minute of oxygen to obtain a chamber pressure of preferably about 1.6 torr. However, the chamber pressure may range from about 0.8 torr to 2.0 torr.
Upon completion of the etching, the plasma is turned off. The chamber is evacuated, and a new plasma is formed of CF4 and oxygen. The processing article is then subjected to the plasma etchant for about one minute. The plasma is turned off, the chamber brought again to atmospheric pressure, and the processing article is removed from the chamber.
Preferably, the etching is conducted by subjecting the mechanically roughened quartz to an etching solution containing hydrofluoric acid with optional components of ammonium fluoride, acetic acid, water and dissolved silica. The proportions of acids in this etching solution can vary from more than 0 to 70 vol % with the ammonium fluoride varying from 0 to 50 wt % and silica amounting to from 0 to 5 wt %. Desirable solutions consist of 20 to 60 vol % hydrofluoric acid, 10 to 30 wt % ammonium fluoride, 20 to 50 vol % acetic acid and 0 to 2 wt % silica. A preferred etching solution comprises 40 to 50 vol % hydrofluoric acid, 15 to 25 wt % ammonium fluoride, 30 to 40 vol % acetic acid and 0.1 wt % silica. The quartz can be in contact with the preferred etching solution for a period between about 0.1 to 5 hours, desirably between about 0.2 to 2 hours and preferably between 0.5 to 1 hours. The temperature of the etching solution can vary between 10° C. to 40° C. with a preferable temperature range between 15° C. to 25° C.
After treatment, the quartz body is typically characterized by a surface roughness having a first component formed by the mechanical treatment and a second component, superimposed on the first component, formed by the chemical treatment. The first and second components of the surface roughness can be described with reference to a mean surface. The mean surface is typically defined as a line drawn through the surface profile in such a way that the area filled with material equals the unfilled area. A first mean surface can be defined over a sample length along the surface of about 500 microns, for example, to characterize the surface deviation formed by the mechanical treatment. A second mean surface can defined over a sample length along the surface of about 50 microns, for example, to characterize the surface deviation formed by the chemical treatment.
According to exemplary embodiments of the invention, the surface roughness has a first component with peaks having a deviation from the first mean surface of about ±5 to ±100 microns, more typically about ±10 to ±50 microns, and a second component with peaks having a deviation from the second mean surface of about ±0.5 to ±10 microns, more typically about ±1 to ±5 microns.
The average deviation of the first component of the surface roughness from the first mean surface is typically between about 2.5 and 50 microns, more typically between about 5 and 25 microns. The average deviation of the second component from the second mean surface is typically between about 0.25 and 5 microns, more typically between about 0.5 and 2.5 microns. Average deviation Ra can be determined with the following integral: R a = 1 l 0 l y l
Figure US06706205-20040316-M00001
where y is the height from the mean surface at a given point, and I is the sample length.
The process, according to exemplary embodiments of the invention, can include other steps to remove loosely adhering pieces on the quartz surface. For example, the surface can be ultrasonically cleaned or washed with distilled water and rinsed. Additionally, the surface can be cleaned by the application of a high pressure spray of water. This step comprises spraying a high pressure water jet at the surface of the article to remove loosely adhering quartz pieces. Removal of adhering quartz pieces by this step reduces the possibility of introducing particles into the deposition chamber. Typically, water pressure, size and shape of the spray jet, distance of the spray jet from the quartz surface, and the amount of time it impinges on the surface can be controlled, as is well known in the art, to remove all adhering pieces. For example, in one procedure, water was pressurized to 500 psi and sent through a fan type nozzle. This provides a water spray that expands from the nozzle at about a 45 degree angle. The nozzle was held at a distance of 3 cm from the surface of the article for about 2 seconds. Water pressures between 10 to 2000 psi can be used to provide a spray that exits the nozzle and expands to an angle between about 1 to about 90 degrees.
The process can be used for pretreating an article. Pretreating herein means preparing an article that has not previously been utilized in or as part of an LPCVD furnace. In this aspect of the invention, pretreating assures that deposited silicon film will firmly adhere to the quartz article. The film does not flake or delaminate from the quartz substrate as readily as flakes and delaminations begin to occur with a non-pretreated roughened article.
Further in accordance with exemplary embodiments of the invention, an article that has been used with or as part of a LPCVD furnace can be prepared for further use with or as part of the furnace by an exemplary process of the invention. The article can be treated when flaking and delaminating film indicate that the article should be cleaned. The furnace can be dismantled and both articles used in connection with the furnace and articles used as part of the structure of the furnace can be prepared together for further use.
In another embodiment, the invention comprises mechanically roughening and chemically roughening a surface of an article that is cycled into and out of the LPCVD furnace in processing cycles. Such articles include boats, vessels, and cantilever arms, which are subjected to temperature change cycles with every cycle into and out of the furnace. As a result, these articles are much more readily affected by the stress of silicon film build up. They require substantially more frequent cleaning than articles that are part of the furnace. Consequently, the present invention can be advantageous when used to prepare articles that are cycled into and out of the furnace. In one aspect of this embodiment, the cantilever arm, carrier or boat that is used in connection with the furnace can be separately prepared for further use while the articles within the furnace can be separately cleaned in situ when cleaning is required. In another aspect, the furnace can be disassembled and all articles prepared together for further use.
EXAMPLES
An initially smooth, fire polished quartz test piece was sandblasted using 120 micron sized silicon carbide grit at 60 psi at a nozzle distance of 7 cm for a period of 5 seconds. The surface roughness of the quartz article after treatment was measured by profilometery. The roughness was measured to be ±15 microns over a distance of 1000 microns. FIG. 2 is an electron microscope image of the sand blasted surface. After mechanical treatment, the article was subjected to a chemical etch consisting of 95 g (49% hydrofluoric acid solution), 35 g ammonium fluoride, and 71 g glacial acetic acid for 1 hour at 15° C. This treatment selectively etched approximately 6 microns to 8 microns of the quartz, leaving a finer surface roughening on the sample article as shown in FIG. 3.
FIG. 2 and FIG. 3 show the quartz surface after mechanical roughening. FIG. 2 and FIG. 3 show significant surface topography variation which will both increase adhesion and reduce stress from CTE mismatch between the quartz and a deposited film. Adhesion and stress reduction is further improved by chemically etching the quartz to further increase its topography but on a finer scale as shown in FIG. 3. The chemical treatment roughens areas like fracture faces and unroughened surface areas that were not affected by the mechanically roughening. The combined roughening increases the amount of coatings that can be subsequently deposited on the quartz article before particle generation occurs and the article must be removed and cleaned.
While embodiments of the invention have been described, the present invention is capable of variation and modification and therefore should not be limited to the precise details of the examples. The invention includes changes and alterations that fall within the purview of the following claims.

Claims (16)

What is claimed is:
1. A method of preparing a quartz processing article for a semiconductor furnace, comprising mechanically roughening a surface of said article and chemically roughening said surface; wherein said mechanically roughening comprises mechanically blasting said surface, and said chemically roughening comprises chemically etching said surface to provide the quartz processing article characterized by a surface roughness having a first component with an average deviation from a first mean surface of about 5 to 25 microns, and a second component with an average deviation from a second mean surface of about 0.5 to 2.5 microns; said first mean surface being defined over a distance of about 500 microns along said surface, and said second mean surface being defined over a distance of about 50 microns along said surface.
2. The method of claim 1, wherein said mechanically roughening comprises sand blasting said surface at an air pressure between about 10 and about 500 psi, at a spray nozzle angle of incidence to the article surface between about 1 and about 90 degrees, at a distance between about 0.1 and about 300 cm, for a period between more than 0 to 500 seconds.
3. The method of claim 1, wherein said mechanically roughening comprises blasting said surface at an air pressure between about 10 and about 250 psi, at a spray nozzle angle of incidence to the article surface between about 30 and about 90 degrees, at a distance between about 1 and about 100 cm, for a period between about 1 to 30 seconds.
4. The method of claim 1, wherein said mechanically roughening comprises blasting said surface at an air pressure between about 15 and about 150 psi, at a spray nozzle angle of incidence to the article surface between about 45 and about 90 degrees, at a distance between about 5 and about 20 cm, for a period between about 2 to 10 seconds.
5. The method of claim 1, wherein said chemical roughening comprises etching said surface with an etching solution comprising hydrofluoric acid with optional components of ammonium fluoride, acetic acid, water and dissolved silica.
6. The method of claim 1 further comprising subjecting said article to a high pressure spray of water.
7. The method of claim 1 further comprising applying a silicon layer onto said article and oxidizing at least some of said silicon to silica to fill surface micro cracks.
8. The method of claim 1 comprising mechanically roughening a surface of said article and chemically roughening said surface as a preconditioning of said article prior to use in a semiconductor processing furnace.
9. The method of claim 1 comprising mechanically roughening a surface of said article and chemically roughening said surface as a treatment of said article subsequent to use of the article in a semiconductor processing furnace.
10. The method of claim 1, comprising withdrawing said article from an LPCVD furnace and mechanically roughening and chemically roughening said surface.
11. The method of claim 10, further comprising returning said article to said LPCVD furnace.
12. The method of claim 10, wherein said article has been cycled into and out of said LPCVD furnace during the processing of semiconductor wafers and prior to said mechanically roughening and chemical roughening.
13. The method of claim 10, wherein said article is a cantilever arm, carrier or boat.
14. A method of preparing a quartz processing article for a semiconductor furnace, comprising mechanically roughening a surface of said article and chemically roughening said surface, wherein said chemical roughening comprises etching said surface with an etching solution comprising 20 to 60 vol % hydrofluoric acid, 10 to 30 wt % ammonium fluoride, 20 to 50 vol % acetic acid and 0 to 2 wt % silica for a period between about 0.2 to 2 hours at a temperature between about 10° C. to 40° C.
15. A method of preparing a quartz processing article for a semiconductor furnace, comprising mechanically roughening a surface of said article and chemically roughening said surface, wherein said chemical roughening comprises etching said surface with an etching solution comprising 40 to 50 vol % hydrofluoric acid, 15 to 25 wt % ammonium fluoride, 30 to 40 vol % acetic acid and 0.1 wt % silica for a period between about 0.5 to 1 hours at a temperature between about 15° C. to 25° C.
16. A method of preparing a quartz processing article for a semiconductor furnace, comprising mechanically roughening a surface of said article and chemically roughening said surface, wherein said mechanically roughening comprises blasting said surface at an air pressure between about 15 and about 150 psi, at a spray nozzle angle of incidence to the article surface between about 45 and about 90 degrees, at a distance between about 5 and about 20 cm, for a period between about 2 to 10 seconds and said chemical roughening comprises etching said surface with an etching solution comprising 40 to 50 vol % hydrofluoric acid, 15 to 25 wt % ammonium fluoride, 30 to 40 vol % acetic acid and 0.1 wt % silica for a period between about 0.5 to 1 hours at a temperature between about 15° C. to 25° C. to provide a quartz processing article characterized by a surface roughness having a first component with an average deviation from a first mean surface of about 5 to 25 microns, and a second component with an average deviation from a second mean surface of about 0.5 to 2.5 microns; said first mean surface being defined over a distance of about 500 microns along said surface, and said second mean surface being defined over a distance of about 50 microns along said surface.
US10/067,380 1999-06-28 2002-02-07 Semiconductor processing article Expired - Lifetime US6706205B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/067,380 US6706205B2 (en) 1999-06-28 2002-02-07 Semiconductor processing article

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/340,793 US6368410B1 (en) 1999-06-28 1999-06-28 Semiconductor processing article
US10/067,380 US6706205B2 (en) 1999-06-28 2002-02-07 Semiconductor processing article

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/340,793 Division US6368410B1 (en) 1999-06-28 1999-06-28 Semiconductor processing article

Publications (2)

Publication Number Publication Date
US20020094686A1 US20020094686A1 (en) 2002-07-18
US6706205B2 true US6706205B2 (en) 2004-03-16

Family

ID=23334970

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/340,793 Expired - Fee Related US6368410B1 (en) 1999-06-28 1999-06-28 Semiconductor processing article
US10/067,380 Expired - Lifetime US6706205B2 (en) 1999-06-28 2002-02-07 Semiconductor processing article

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/340,793 Expired - Fee Related US6368410B1 (en) 1999-06-28 1999-06-28 Semiconductor processing article

Country Status (1)

Country Link
US (2) US6368410B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040086689A1 (en) * 2002-10-31 2004-05-06 Tosoh Corporation Island projection-modified part, method for producing the same, and apparatus comprising the same
US20050215059A1 (en) * 2004-03-24 2005-09-29 Davis Ian M Process for producing semi-conductor coated substrate
US20070084827A1 (en) * 2005-10-07 2007-04-19 Rohm And Haas Electronic Materials Llc Semiconductor processing

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6504233B1 (en) * 1999-06-28 2003-01-07 General Electric Company Semiconductor processing component
JP2001338878A (en) * 2000-03-21 2001-12-07 Sharp Corp Susceptor and surface treatment method
JP2002047034A (en) * 2000-07-31 2002-02-12 Shinetsu Quartz Prod Co Ltd Quarts glass jig for process device utilizing plasma
WO2002015255A1 (en) * 2000-08-11 2002-02-21 Chem Trace Corporation System and method for cleaning semiconductor fabrication equipment parts
JP4034543B2 (en) * 2001-09-25 2008-01-16 東京エレクトロン株式会社 Method of processing quartz member for plasma processing apparatus, quartz member for plasma processing apparatus, and plasma processing apparatus mounted with quartz member for plasma processing apparatus
US7250220B1 (en) 2002-10-03 2007-07-31 Tosoh Set, Inc. Bond strength of coatings to ceramic components
US20040173313A1 (en) * 2003-03-03 2004-09-09 Bradley Beach Fire polished showerhead electrode
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids
US20050048876A1 (en) * 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
DE10349073A1 (en) * 2003-10-14 2005-05-19 Rolls-Royce Deutschland Ltd & Co Kg Hollow fan blade for aircraft engines and method for their production
US7754609B1 (en) 2003-10-28 2010-07-13 Applied Materials, Inc. Cleaning processes for silicon carbide materials
TWI237327B (en) * 2003-11-18 2005-08-01 Powerchip Semiconductor Corp Method of forming barrier layer
DE102005005196B4 (en) * 2005-02-03 2009-04-23 Heraeus Quarzglas Gmbh & Co. Kg Method for producing a component made of quartz glass for use in semiconductor production and component obtained by the method
JP5156752B2 (en) * 2006-11-01 2013-03-06 クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー Method and apparatus for cleaning chamber components
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7791199B2 (en) * 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US7756184B2 (en) * 2007-02-27 2010-07-13 Coherent, Inc. Electrodes for generating a stable discharge in gas laser system
US8405196B2 (en) * 2007-03-05 2013-03-26 DigitalOptics Corporation Europe Limited Chips having rear contacts connected by through vias to front contacts
CN101802990B (en) 2007-07-31 2013-03-13 数字光学欧洲有限公司 Semiconductor packaging process using through silicon vias
US20120003779A1 (en) * 2007-08-31 2012-01-05 Csg Solar Ag Abrasion-etch texturing of glass
US20100053407A1 (en) * 2008-02-26 2010-03-04 Tessera, Inc. Wafer level compliant packages for rear-face illuminated solid state image sensors
US20100159699A1 (en) * 2008-12-19 2010-06-24 Yoshimi Takahashi Sandblast etching for through semiconductor vias
US9640437B2 (en) * 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
KR101059490B1 (en) 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 Conductive pads defined by embedded traces
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
ES2421858A1 (en) * 2012-03-01 2013-09-05 Bsh Electrodomesticos Espana Making home appliance device e.g. plate, by roughening first surface portion of base body using particle beam, subjecting first surface portion to hydrofluoric acid treatment, and roughening first surface portion of surface element
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
JP6652696B2 (en) * 2015-01-14 2020-02-26 セントラル硝子株式会社 Anti-glare glass plate article for display device and method for producing the same
CN114102440A (en) * 2020-08-28 2022-03-01 长鑫存储技术有限公司 Surface treatment method for quartz member
WO2023027932A1 (en) * 2021-08-25 2023-03-02 Corning Incorporated Textured glass-based articles

Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805453A (en) * 1970-12-09 1974-04-23 Schmall Auto & Elekt Sand blasting apparatus
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US4576698A (en) * 1983-06-30 1986-03-18 International Business Machines Corporation Plasma etch cleaning in low pressure chemical vapor deposition systems
JPS62218581A (en) * 1986-03-20 1987-09-25 Nobuyuki Koura Pretreatment for carrying out electroless plating on inorganic material with high adhesion
JPS63123892A (en) * 1986-11-13 1988-05-27 Sumitomo Electric Ind Ltd Boat for growth of ii-vi compound single crystal
US4761134A (en) * 1987-03-30 1988-08-02 Norton Company Silicon carbide diffusion furnace components with an impervious coating thereon
DE3942931A1 (en) 1988-12-26 1990-06-28 Toshiba Ceramics Co Tablet for wafers - with specified surface roughness parameters for the seating surfaces
US4998879A (en) * 1988-04-29 1991-03-12 Norton Company High purity diffusion furnace components
US5149378A (en) * 1989-04-10 1992-09-22 Hashimoto Kasei Kabushiki-Kaisya Tungsten film forming apparatus
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5360484A (en) * 1991-07-26 1994-11-01 Canon Kabushiki Kaisha Microwave plasma CVD apparatus provided with a microwave transmissive window made of specific ceramics for the formation of a functional deposited film
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US5565068A (en) * 1994-02-28 1996-10-15 Texaco Development Corporation Energy conservation during plural stage distillation
US5851307A (en) * 1997-04-28 1998-12-22 Advanced Micro Devices, Inc. Method for in-situ cleaning of polysilicon-coated quartz furnaces
JPH11130451A (en) * 1997-10-31 1999-05-18 Shinetsu Quartz Prod Co Ltd Quartz glass jig for semiconductor heat treatment apparatus
US5952063A (en) * 1996-12-27 1999-09-14 Shin-Etsu Chemical Co., Ltd. Crucible of pyrolytic boron nitride for molecular beam epitaxy
US6030542A (en) * 1994-12-27 2000-02-29 Toyo Metallizing Co., Ltd. Polyester film for leader tapes, and a production process thereof
US6074488A (en) 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
US6110285A (en) 1997-04-15 2000-08-29 Toshiba Ceramics Co., Ltd. Vertical wafer boat
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US6150006A (en) 1997-03-27 2000-11-21 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass component used in the production of semiconductors
US6165274A (en) * 1997-10-31 2000-12-26 Canon Kabushiki Kaisha Plasma processing apparatus and method
US6187103B1 (en) * 1998-08-27 2001-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for transporting wafers
US6306489B1 (en) * 1997-05-07 2001-10-23 Heraeus Quarzglas Gmbh Quartz glass component for a reactor housing a method of manufacturing same and use thereof
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6425168B1 (en) * 1994-09-30 2002-07-30 Shin-Etsu Handotai Co., Ltd. Quartz glass jig for heat-treating semiconductor wafers and method for producing same
US6458445B1 (en) * 1998-12-01 2002-10-01 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass jig having large irregularities on the surface and method for producing the same
US6504233B1 (en) * 1999-06-28 2003-01-07 General Electric Company Semiconductor processing component
US6513433B2 (en) * 2000-04-14 2003-02-04 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor
US6590338B1 (en) * 1998-11-18 2003-07-08 Candescent Technologies Corporation Auxiliary chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1747802A (en) * 1927-08-02 1930-02-18 Ohio Sanitary Engineering Corp Process for treating creamery waste
US5045214A (en) * 1983-03-21 1991-09-03 Union Oil Company Of California Methods for removing substances from aqueous solutions
US4671882A (en) * 1983-08-31 1987-06-09 Deere & Company Phosphoric acid/lime hazardous waste detoxification treatment process
US5238579A (en) * 1990-09-12 1993-08-24 Falconbridge Limited Method for generating coarse precipitates from solutions or slurries containing ionic species
US5120447A (en) * 1991-03-06 1992-06-09 Gte Products Corporation Method for removing heavy metals from wastewater
US5348662A (en) * 1992-05-14 1994-09-20 Elf Atochem North America, Inc. Process for removing heavy metals from aqueous solutions
US5746920A (en) * 1994-06-08 1998-05-05 Fraunhofer-Gesellschaft Zur Foerder Der Angewandten Forschung E.V. Process for purifying dairy wastewater
AU2064795A (en) * 1994-06-09 1996-01-04 Agricultural Research Institute Of Ontario Process for clarifying milkhouse wastewater
US5569385A (en) * 1994-11-14 1996-10-29 Epsilon Chemicals Ltd. Food processing effluent rendering process and apparatus
US6096223A (en) * 1998-10-05 2000-08-01 Merck & Co., Inc. Method for treating metal contaminated water

Patent Citations (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805453A (en) * 1970-12-09 1974-04-23 Schmall Auto & Elekt Sand blasting apparatus
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US4576698A (en) * 1983-06-30 1986-03-18 International Business Machines Corporation Plasma etch cleaning in low pressure chemical vapor deposition systems
JPS62218581A (en) * 1986-03-20 1987-09-25 Nobuyuki Koura Pretreatment for carrying out electroless plating on inorganic material with high adhesion
JPS63123892A (en) * 1986-11-13 1988-05-27 Sumitomo Electric Ind Ltd Boat for growth of ii-vi compound single crystal
US4761134B1 (en) * 1987-03-30 1993-11-16 Silicon carbide diffusion furnace components with an impervious coating thereon
US4761134A (en) * 1987-03-30 1988-08-02 Norton Company Silicon carbide diffusion furnace components with an impervious coating thereon
US4998879A (en) * 1988-04-29 1991-03-12 Norton Company High purity diffusion furnace components
DE3942931A1 (en) 1988-12-26 1990-06-28 Toshiba Ceramics Co Tablet for wafers - with specified surface roughness parameters for the seating surfaces
US5149378A (en) * 1989-04-10 1992-09-22 Hashimoto Kasei Kabushiki-Kaisya Tungsten film forming apparatus
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
US5360484A (en) * 1991-07-26 1994-11-01 Canon Kabushiki Kaisha Microwave plasma CVD apparatus provided with a microwave transmissive window made of specific ceramics for the formation of a functional deposited film
US5762748A (en) * 1992-08-27 1998-06-09 Applied Materials, Inc Lid and door for a vacuum chamber and pretreatment therefor
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5565068A (en) * 1994-02-28 1996-10-15 Texaco Development Corporation Energy conservation during plural stage distillation
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US6425168B1 (en) * 1994-09-30 2002-07-30 Shin-Etsu Handotai Co., Ltd. Quartz glass jig for heat-treating semiconductor wafers and method for producing same
US6030542A (en) * 1994-12-27 2000-02-29 Toyo Metallizing Co., Ltd. Polyester film for leader tapes, and a production process thereof
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5952063A (en) * 1996-12-27 1999-09-14 Shin-Etsu Chemical Co., Ltd. Crucible of pyrolytic boron nitride for molecular beam epitaxy
US6150006A (en) 1997-03-27 2000-11-21 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass component used in the production of semiconductors
US6110285A (en) 1997-04-15 2000-08-29 Toshiba Ceramics Co., Ltd. Vertical wafer boat
US5851307A (en) * 1997-04-28 1998-12-22 Advanced Micro Devices, Inc. Method for in-situ cleaning of polysilicon-coated quartz furnaces
US6306489B1 (en) * 1997-05-07 2001-10-23 Heraeus Quarzglas Gmbh Quartz glass component for a reactor housing a method of manufacturing same and use thereof
US6074488A (en) 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6165274A (en) * 1997-10-31 2000-12-26 Canon Kabushiki Kaisha Plasma processing apparatus and method
JPH11130451A (en) * 1997-10-31 1999-05-18 Shinetsu Quartz Prod Co Ltd Quartz glass jig for semiconductor heat treatment apparatus
US6187103B1 (en) * 1998-08-27 2001-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for transporting wafers
US6590338B1 (en) * 1998-11-18 2003-07-08 Candescent Technologies Corporation Auxiliary chamber
US6458445B1 (en) * 1998-12-01 2002-10-01 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass jig having large irregularities on the surface and method for producing the same
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US20020094686A1 (en) * 1999-06-28 2002-07-18 Gorczyca Thomas Bert Semiconductor processing article
US6504233B1 (en) * 1999-06-28 2003-01-07 General Electric Company Semiconductor processing component
US6513433B2 (en) * 2000-04-14 2003-02-04 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040086689A1 (en) * 2002-10-31 2004-05-06 Tosoh Corporation Island projection-modified part, method for producing the same, and apparatus comprising the same
US7338699B2 (en) * 2002-10-31 2008-03-04 Tosoh Corporation Island projection-modified part, method for producing the same, and apparatus comprising the same
US20050215059A1 (en) * 2004-03-24 2005-09-29 Davis Ian M Process for producing semi-conductor coated substrate
US20070084827A1 (en) * 2005-10-07 2007-04-19 Rohm And Haas Electronic Materials Llc Semiconductor processing
US20090194022A1 (en) * 2005-10-07 2009-08-06 Rohm And Haas Electronic Materials Llc Semiconductor processing
US7722441B2 (en) 2005-10-07 2010-05-25 Rohm And Haas Electronic Materials Llc Semiconductor processing
US9490157B2 (en) 2005-10-07 2016-11-08 Tokai Carbon Co., Ltd. Semiconductor processing

Also Published As

Publication number Publication date
US20020094686A1 (en) 2002-07-18
US6368410B1 (en) 2002-04-09

Similar Documents

Publication Publication Date Title
US6706205B2 (en) Semiconductor processing article
JP3160229B2 (en) Susceptor for plasma CVD apparatus and method for manufacturing the same
KR101332206B1 (en) Semiconductor processing
US5474649A (en) Plasma processing apparatus employing a textured focus ring
US5660640A (en) Method of removing sputter deposition from components of vacuum deposition equipment
KR101145470B1 (en) Cleaning process and apparatus for silicate materials
KR19980032528A (en) Manufacturing apparatus of electronic device and manufacturing method of electronic device
JP2007134688A (en) Semiconductor treatment
JP3434947B2 (en) Shower plate
JP2001102365A (en) Vacuum chamber and manufacturing method therefor
KR100547743B1 (en) Silica Glass Jig for Semiconductor Industry and Manufacturing Method Thereof
JP4407143B2 (en) Quartz glass component, manufacturing method thereof, and apparatus using the same
KR20040014257A (en) Component of glassy carbon for cvd apparatus and process for production thereof
JP4785834B2 (en) Manufacturing method of semiconductor coated substrate
JP3854017B2 (en) Plasma processing apparatus and plasma processing method
JP4380211B2 (en) Quartz glass parts, manufacturing method thereof, and apparatus using the same
CN113584420A (en) Amorphous Y2SiO5Method for producing a coating
KR20190027636A (en) Quartz surface treatment method for quartz surface coating
CN113584417B (en) Rare earth metal salt ceramic composite coating and preparation method and application thereof
WO2004051724A1 (en) Silica glass jig used in process for manufacturing semiconductor and method of manufacturing silica glass jig
JP4454761B2 (en) Frost treatment method for glass product surface
KR20050054317A (en) Method of manufacturing a susceptor which comprises blast process, and the susceptor manufactured thereof
JP2001338915A (en) Silicon part
JP2024531242A (en) Machined ceramic chamber parts
JP2005145721A (en) Method for frosting surface of glass article and glass article

Legal Events

Date Code Title Description
STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
AS Assignment

Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., A

Free format text: SECURITY AGREEMENT;ASSIGNORS:MOMENTIVE PERFORMANCE MATERIALS, INC.;JUNIPER BOND HOLDINGS I LLC;JUNIPER BOND HOLDINGS II LLC;AND OTHERS;REEL/FRAME:022902/0461

Effective date: 20090615

FPAY Fee payment

Year of fee payment: 8

AS Assignment

Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE, PENNSYLVANIA

Free format text: SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC;REEL/FRAME:028344/0208

Effective date: 20120525

Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE,

Free format text: SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC;REEL/FRAME:028344/0208

Effective date: 20120525

AS Assignment

Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE, PENNSYLVANIA

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:030185/0001

Effective date: 20121116

Owner name: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE,

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:030185/0001

Effective date: 20121116

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., NEW YORK

Free format text: SECURITY AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:030311/0343

Effective date: 20130424

AS Assignment

Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT, PENNSYLVANIA

Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0570

Effective date: 20141024

Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT, PENNSYLVANIA

Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0662

Effective date: 20141024

Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., A

Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0570

Effective date: 20141024

Owner name: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., A

Free format text: SECURITY INTEREST;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:034066/0662

Effective date: 20141024

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.;REEL/FRAME:034113/0331

Effective date: 20141024

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.;REEL/FRAME:034113/0252

Effective date: 20141024

AS Assignment

Owner name: BOKF, NA, AS SUCCESSOR COLLATERAL AGENT, OKLAHOMA

Free format text: NOTICE OF CHANGE OF COLLATERAL AGENT - ASSIGNMENT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT;REEL/FRAME:035136/0457

Effective date: 20150302

Owner name: BOKF, NA, AS SUCCESSOR COLLATERAL AGENT, OKLAHOMA

Free format text: NOTICE OF CHANGE OF COLLATERAL AGENT - ASSIGNMENT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY - SECOND LIEN;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT;REEL/FRAME:035137/0263

Effective date: 20150302

FPAY Fee payment

Year of fee payment: 12

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA;REEL/FRAME:049194/0085

Effective date: 20190515

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BOKF, NA;REEL/FRAME:049249/0271

Effective date: 20190515

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:050304/0555

Effective date: 20190515

AS Assignment

Owner name: BNP PARIBAS, AS ADMINISTRATIVE AGENT, NEW YORK

Free format text: FIRST LIEN TERM LOAN PATENT AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:049387/0782

Effective date: 20190515

Owner name: CITIBANK, N.A., AS ADMINISTRATIVE AGENT, NEW YORK

Free format text: ABL PATENT AGREEMENT;ASSIGNORS:MOMENTIVE PERFORMANCE MATERIALS INC.;MOMENTIVE PERFORMANCE MATERIALS GMBH;REEL/FRAME:049388/0252

Effective date: 20190515

Owner name: KOOKMIN BANK, NEW YORK BRANCH, AS ADMINISTRATIVE A

Free format text: SECOND LIEN TERM LOAN PATENT AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:049388/0220

Effective date: 20190515

Owner name: KOOKMIN BANK, NEW YORK BRANCH, AS ADMINISTRATIVE AGENT, NEW YORK

Free format text: SECOND LIEN TERM LOAN PATENT AGREEMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:049388/0220

Effective date: 20190515

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT;REEL/FRAME:054883/0855

Effective date: 20201222

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS QUARTZ, INC., OHIO

Free format text: NUNC PRO TUNC ASSIGNMENT;ASSIGNOR:MOMENTIVE PERFORMANCE MATERIALS INC.;REEL/FRAME:055222/0140

Effective date: 20210122

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:KOOKMIN BANK NEW YORK;REEL/FRAME:063197/0373

Effective date: 20230329

AS Assignment

Owner name: MOMENTIVE PERFORMANCE MATERIALS INC., NEW YORK

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BNP PARIBAS;REEL/FRAME:063259/0133

Effective date: 20230329