US6798519B2 - Method and apparatus for an improved optical window deposition shield in a plasma processing system - Google Patents
Method and apparatus for an improved optical window deposition shield in a plasma processing system Download PDFInfo
- Publication number
- US6798519B2 US6798519B2 US10/259,352 US25935202A US6798519B2 US 6798519 B2 US6798519 B2 US 6798519B2 US 25935202 A US25935202 A US 25935202A US 6798519 B2 US6798519 B2 US 6798519B2
- Authority
- US
- United States
- Prior art keywords
- deposition shield
- optical window
- recited
- window deposition
- exposed surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 148
- 230000008021 deposition Effects 0.000 title claims abstract description 140
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000012545 processing Methods 0.000 title claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims description 35
- 230000001681 protective effect Effects 0.000 claims description 35
- 238000002048 anodisation reaction Methods 0.000 claims description 23
- 238000003754 machining Methods 0.000 claims description 17
- 230000013011 mating Effects 0.000 claims description 17
- 238000005507 spraying Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 238000007743 anodising Methods 0.000 claims description 8
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000009499 grossing Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000005242 forging Methods 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- -1 Sc2F3 Inorganic materials 0.000 claims description 3
- 229910009527 YF3 Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 244000137852 Petrea volubilis Species 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
Definitions
- the present invention relates to an improved component for a plasma processing system and, more particularly, to an optical window deposition shield employed in a plasma processing system to provide optical access to a process space through a deposition shield.
- IC integrated circuits
- plasma is formed within the plasma reactor under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas.
- the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the chamber (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
- components of the plasma processing system are coated with a protective barrier.
- a protective barrier For example, components fabricated from aluminum can be anodized to produce a surface layer of aluminum oxide, which is more resistant to the plasma.
- a consumable or replaceable component such as one fabricated from silicon, quartz, alumina, carbon, or silicon carbide, can be inserted within the processing chamber to protect the surfaces of more valuable components that would impose greater costs during frequent replacement.
- the present invention provides an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously addresses the above-identifed shortcomings.
- an optical window deposition shield comprising a plug configured to extend through an opening formed in the deposition shield, a flange coupled to the plug and configured to attach the optical window deposition shield to the deposition shield.
- the plug comprises a frontal surface and a perimeter surface coupled thereto.
- the flange comprises a first surface, a second surface, and an edge surface, wherein the first surface further comprises a mating surface.
- the optical window deposition shield comprises at least one optical through-hole coupled to the frontal surface of the plug and the second surface of the flange and configured to permit the passage of light, wherein such an optical through-hole can comprise an exposed entrant surface coupled to the frontal surface of the plug, and an interior through-hole surface coupled to the exposed entrant surface and to the second surface of the flange.
- the optical window deposition shield comprises a plurality of fastening receptors coupled to the mating surface of the first surface of the flange and the second surface of the flange and configured to receive fastening devices, wherein each fastening receptor can comprise an entrant region, a through-hole region, an exit through-hole, an interior fastener surface, and a recessed fastener surface.
- the optical window deposition shield further comprises a protective barrier formed on a plurality of exposed surfaces of the optical window deposition shield exposed to the processing plasma.
- the exposed surfaces of the deposition shield comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole.
- the present invention further provides a method of producing the optical window deposition shield in the plasma processing system comprising the steps: fabricating the optical window deposition shield; anodizing the optical window deposition shield to form a surface anodization layer on the optical window deposition shield; machining the exposed surfaces on the optical window deposition shield to remove the surface anodization layer; and forming a protective barrier on the exposed surfaces.
- the present invention provides another method of producing the optical window deposition shield in the plasma processing system comprising the steps: fabricating the optical window deposition shield; masking the exposed surfaces on the optical window deposition shield to prevent formation of a surface anodization layer; anodizing the optical window deposition shield to form the surface anodization layer on the optical window deposition shield; unmasking the exposed surfaces; and forming a protective barrier on the exposed surfaces.
- the present invention provides another method of producing the optical window deposition shield in the plasma processing system comprising the steps: fabricating the optical window deposition shield; and forming a protective barrier on exposed surfaces.
- the present invention also includes another method that combines masking portions of the exposed surfaces before anodization and leaving other portions of the exposed surfaces unmasked; anodizing the unmasked surfaces; machining the portions of the exposed surfaces that were unmasked and which were anodized; unmasking the masked portions of the exposed surfaces; and forming a protective barrier on the exposed surfaces.
- Any of the above methods may also optionally include machining anodized (or otherwise coated) surfaces that are not exposed surfaces (e.g., to obtain a bare metal connection where the machined surface will mate with another part).
- the optical window deposition shield serves as an insert, wherein the insert comprises no optical through-holes and can be produced using any of the above methods.
- FIG. 1 shows a simplified block diagram of a plasma processing system comprising an optical window deposition shield according to an embodiment of the present invention
- FIG. 2A shows a plan view of an optical window deposition shield for a plasma processing system according to an embodiment of the present invention
- FIG. 2B shows a plan view of an insert for a plasma processing system according to an embodiment of the present invention
- FIG. 3A shows a cross sectional view of an optical window deposition shield for a plasma processing system according to an embodiment of the present invention
- FIG. 3B shows a cross sectional view of an insert for a plasma processing system according to an embodiment of the present invention
- FIG. 4 shows an expanded cross sectional view of an optical through-hole for an optical window deposition shield in a plasma processing system according to an embodiment of the present invention
- FIG. 5 shows an expanded view of a perimeter surface of a plug and a first surface of a flange for an optical window deposition shield in a plasma processing system according to an embodiment of the present invention
- FIG. 6 presents a method of producing an optical window deposition shield for a plasma processing system according to an embodiment of the present invention
- FIG. 7 presents a method of producing an optical window deposition shield for a plasma processing system according to another embodiment of the present invention.
- FIG. 8 presents a method of producing an optical window deposition shield for a plasma processing system according to another embodiment of the present invention.
- the present invention provides an improved optical window deposition shield for a plasma processing system to provide optical access to a process space through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously addresses known shortcomings.
- a plasma processing system 1 is depicted in FIG. 1 comprising a plasma processing chamber 10 , an upper assembly 20 , an electrode plate 24 , a substrate holder 30 for supporting a substrate 35 , and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced pressure atmosphere 11 in plasma processing chamber 10 .
- Plasma processing chamber 10 can facilitate the formation of a processing plasma in a process space 12 adjacent substrate 35 .
- the plasma processing system 1 can be configured to process any substrate (e.g., 200 mm substrates, 300 mm substrates, or larger).
- upper assembly 20 can comprise at least one of a cover, a gas injection assembly, and an upper electrode impedance match network.
- the electrode plate 24 can be coupled to an RF source.
- the upper assembly 20 comprises a cover and an electrode plate 24 , wherein the electrode plate 24 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10 .
- the plasma processing chamber 10 , the upper assembly 20 , and the electrode plate 24 can be electrically connected to ground potential.
- Plasma processing chamber 10 can, for example, further comprise a deposition shield 14 for protecting the plasma processing chamber 10 from the processing plasma in the process space 12 , and an optical viewport 16 .
- Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18 , and an optical window flange 19 can be configured to couple optical window 17 to the optical window deposition shield 18 .
- Sealing members such as O-rings, can be provided between the optical window flange 19 and the optical window 17 , between the optical window 17 and the optical window deposition shield 18 , and between the optical window deposition shield 18 and the plasma processing chamber 10 .
- Optical viewport 16 can, for example, permit monitoring of optical emission from the processing plasma in process space 12 .
- Substrate holder 30 can, for example, further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10 , and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10 .
- a bellows shield 54 can, for example, be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma.
- Substrate holder 10 can, for example, further be coupled to at least one of a focus ring 60 , and a shield ring 62 .
- a baffle plate 64 can extend about a periphery of the substrate holder 30 .
- Substrate 35 can be, for example, transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and chamber feed-through (not shown) via robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30 .
- Substrate 35 can be, for example, affixed to the substrate holder 30 via an electrostatic clamping system.
- substrate holder 30 can, for example, further include a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
- gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30 .
- Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures.
- heating elements such as resistive heating elements, or thermoelectric heaters/coolers can be included.
- substrate holder 30 can comprise an electrode through which RF power is coupled to the processing plasma in process space 12 .
- substrate holder 30 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator (not shown) through an impedance match network (not shown) to substrate holder 30 .
- the RF bias can serve to heat electrons to form and maintain plasma.
- the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and upper gas injection electrode serve as ground surfaces.
- RIE reactive ion etch
- a typical frequency for the RF bias can range from 1 MHz to 100 MHz and is preferably 13.56 MHz.
- RF systems for plasma processing are well known to those skilled in the art.
- the processing plasma formed in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, any combination thereof, and with and without DC magnet systems.
- the processing plasma in process space 12 can be formed using electron cyclotron resonance (ECR).
- ECR electron cyclotron resonance
- the processing plasma in process space 12 is formed from the launching of a Helicon wave.
- the processing plasma in process space 12 is formed from a propagating surface wave.
- optical window deposition shield 18 comprises a plug 80 configured to extend through an opening in the deposition shield 14 , and a flange 82 coupled to the plug 80 and configured to attach the optical window deposition shield 18 to the deposition shield 14 .
- the plug 80 comprises a frontal surface 84 configured to face a processing plasma in the process space 12 , and a perimeter surface 86 configured to mate with a first opening surface in the opening 70 (FIG. 1) of the deposition shield 14 .
- flange 82 comprises a first surface 88 coupled to the perimeter surface 86 of plug 80 , a second surface 90 , and an edge surface 92 .
- a width (along a major axis) of the plug 80 can range from 1 to 100 mm. Desirably, the width can range from 10 to 40 mm, and, preferably, the width is at least 25 mm.
- a height (along a minor axis) of the plug 80 can range from 1 to 100 mm. Desirably, the height can range from 10 to 40 mm, and, preferably, the height is at least 15 mm.
- the optical window deposition shield 18 can, for example, further include at least one optical through-hole 94 coupled to the frontal surface 84 of the plug 80 and to the second surface 90 of the flange 82 , and configured to permit the passage of light to and/or from the process space 12 .
- FIG. 4 presents an expanded view of optical through-hole 94 , wherein optical through-hole 94 comprises an exposed entrant surface 96 coupled to the frontal surface 84 of the plug 80 , and an interior through-hole surface 98 coupled to the exposed entrant surface 96 and the second surface 90 of the flange 82 .
- a diameter of at least one optical through-hole 94 can range from 0.5 to 20 mm. Desirably, the diameter can range from 0.5 to 5 mm, and, preferably, the width is at least 0.5 mm.
- the number of optical through-holes 94 can range from 1 to 500. Desirably, the number can range from 1 to 100, and, preferably, the number is at least 1.
- the optical window deposition shield 18 comprises no optical through-holes.
- the optical window deposition shield 18 serves as an insert 18 ′ to fill the opening in the deposition shield 14 (i.e. optical access is not required for the specific process).
- flange 82 can, for example, further comprise a plurality of fastening receptors 100 , each fastening receptor 100 coupled to the first surface 88 and the second surface 90 of the flange 82 , and configured to receive fastening devices (not shown) (such as bolts) to couple optical window deposition shield 18 to deposition shield 14 .
- the fastening receptors 100 can comprise an entrant region 102 , a through-hole region 104 , an exit through-hole 106 , an interior fastener surface 108 , and a recessed fastener surface 109 .
- a portion of the first surface 88 of flange 82 can comprise a mating surface 110 configured to couple to a mating surface of the deposition shield 14 (FIG. 1 ).
- the number of fastening receptors 100 formed within optical window deposition shield 18 can range from 0 to 100. Desirably, the number of fastening receptors 100 can range from 1 to 8; and, preferably, the number of fastening receptors 100 is at least 2 fastening receptors.
- FIG. 5 provides an expanded view of the perimeter surface 86 of the plug 80 , and the first surface 88 of the flange 82 , and the coupling therebetween.
- the optical window deposition shield 18 further comprises a protective barrier 150 formed on a plurality of exposed surfaces 145 of the optical window deposition shield 18 .
- the exposed surfaces 145 can comprise the frontal surface 84 of the plug 80 , the perimeter surface 86 of the plug 80 , and the first surface 88 of the flange 82 excluding the mating surface 110 .
- the exposed surfaces 145 can comprise the exposed entrant surface 96 of the at least one optical through-hole 94 .
- the exposed surfaces 145 can include mating surface 110 .
- the protective O 3 barrier 150 can comprise a compound including an oxide of aluminum such as Al 2 O 3 . In another embodiment of the present invention, the protective barrier 150 can comprise a mixture of Al 2 O 3 and Y 2 O 3 . In another embodiment of the present invention, the protective barrier 150 can comprise at least one of a III-column element (i.e., column III of the periodic table) and a Lanthanon element. In another embodiment of the present invention, the III-column element can comprise at least one of Yttrium, Scandium, and Lanthanum. In another embodiment of the present invention, the Lanthanon element can comprise at least one of Cerium, Dysprosium, and Europium.
- a III-column element i.e., column III of the periodic table
- Lanthanon element can comprise at least one of Cerium, Dysprosium, and Europium.
- the compound forming protective barrier 150 can comprise at least one of Yttria (Y 2 O 3 ), Sc 2 O 3 , Sc 2 F 3 , YF 3 , La 2 O 3 , CeO 2 , Eu 2 O 3 , and DyO 3 .
- the protective barrier 150 formed on optical window deposition shield 18 can comprise a minimum thickness, wherein the minimum thickness can be specified as constant across at least one of the exposed surfaces 145 .
- the minimum thickness can be variable across the exposed surfaces 145 .
- the minimum thickness can be constant over a first portion of an exposed surface and variable over a second portion of an exposed surface.
- a variable thickness can occur on a curved surface, on a comer, or in a hole.
- the minimum thickness can range from 0.5 micron to 500 micron. Desirably, the minimum thickness can range from 5 micron to 200 micron, and, preferably, the minimum thickness is at least 5 micron.
- FIG. 6 presents a method of producing the optical window deposition shield 18 for the plasma processing system 1 described in FIG. 1 according to an embodiment of the present invention.
- a flow diagram 300 begins in 310 with fabricating the optical window deposition shield 18 (as described above). Fabricating the optical window deposition shield comprises at least one of machining, casting, polishing, forging, and grinding. For example, elements of the optical window deposition shield 18 can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc. The techniques for machining a component using, for example, a mill or a lathe, are well known to those skilled in the art of machining.
- the optical window deposition shield 18 can, for example, be fabricated from aluminum.
- the optical window deposition shield 18 is anodized to form a surface anodization layer.
- the surface anodization layer comprises aluminum oxide (Al 2 O 3 ). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
- exposed surfaces 145 on the anodized optical window deposition shield 18 are identified, and the surface anodization layer is removed from the exposed surfaces 145 using standard machining techniques.
- the exposed surfaces comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole.
- the protective barrier 150 (as described above) is formed on the exposed surfaces 145 identified in 330 .
- a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- FIG. 7 presents a method of producing the optical window deposition shield 18 in the plasma processing system 1 described in FIG. 1 according to another embodiment of the present invention.
- a flow diagram 400 begins in 410 with fabricating the optical window deposition shield 18 (as described above). Fabricating the optical window deposition shield 18 comprises at least one of machining, casting, polishing, forging, and grinding. For example, elements of the shield 18 can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc. The techniques for machining a component using, for example, a mill or a lathe, are well known to those skilled in the art of machining.
- the optical window deposition shield 18 can, for example, be fabricated from aluminum.
- exposed surfaces 145 of the optical window deposition shield 18 are masked to prevent the formation of a surface anodization layer thereon.
- the exposed surfaces 145 comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole. Techniques for surface masking and unmasking are well known to those skilled in the art of surface coatings and surface anodization.
- the optical window deposition shield 18 is anodized to form a surface anodization layer on the remaining unmasked surfaces.
- the surface anodization layer can comprise aluminum oxide (Al 2 O 3 ). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
- a protective barrier 150 (as described above) is formed on the exposed surfaces 145 .
- a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier 150 can further comprise polishing (or smoothing) the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- FIG. 8 presents a method of producing the optical window deposition shield 18 in the plasma processing system 1 described in FIG. 1 according to another embodiment of the present invention.
- a flow diagram 500 begins in 510 with fabricating the optical window deposition shield 18 (as described above).
- Fabricating the optical window deposition shield can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe are well known to those skilled in the art of machining.
- the optical window deposition shield 18 can, for example, be fabricated from aluminum.
- a protective barrier 150 (as described above) is formed on exposed surfaces 145 of the optical window deposition shield 18 .
- the exposed surfaces comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole.
- the exposed surfaces comprise all surfaces on the optical window deposition shield 18 .
- a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- the present invention also includes another method that combines masking portions of the exposed surfaces before anodization and leaving other portions of the exposed surfaces unmasked; anodizing the unmasked surfaces; machining the portions of the exposed surfaces that were unmasked and which were anodized; unmasking the masked portions of the exposed surfaces; and forming a protective barrier on the exposed surfaces.
- Any of the above methods may also optionally include machining anodized (or otherwise coated) surfaces that are not exposed surfaces (e.g., to obtain a bare metal connection where the machined surface will mate with another part).
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- Prevention Of Fouling (AREA)
Abstract
Description
Claims (40)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/259,352 US6798519B2 (en) | 2002-09-30 | 2002-09-30 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
JP2004539389A JP4585316B2 (en) | 2002-09-30 | 2003-09-29 | Apparatus for improved optical window deposition shield in plasma processing systems |
AU2003274589A AU2003274589A1 (en) | 2002-09-30 | 2003-09-29 | Optical window deposition shield in a plasma processing system |
KR1020057005449A KR100732260B1 (en) | 2002-09-30 | 2003-09-29 | Method And Apparatus For An Improved Optical Window Deposition Shield In A Plasma Processing System |
CNB038220806A CN100367446C (en) | 2002-09-30 | 2003-09-29 | Optical window deposition shield for use in a plasma processing system |
PCT/IB2003/004957 WO2004030014A2 (en) | 2002-09-30 | 2003-09-29 | Optical window deposition shield in a plasma processing system |
US10/803,994 US7163585B2 (en) | 2002-09-30 | 2004-03-19 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US11/620,289 US7811428B2 (en) | 2002-09-30 | 2007-01-05 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/259,352 US6798519B2 (en) | 2002-09-30 | 2002-09-30 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/803,994 Division US7163585B2 (en) | 2002-09-30 | 2004-03-19 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040060516A1 US20040060516A1 (en) | 2004-04-01 |
US6798519B2 true US6798519B2 (en) | 2004-09-28 |
Family
ID=32029489
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/259,352 Expired - Lifetime US6798519B2 (en) | 2002-09-30 | 2002-09-30 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US10/803,994 Expired - Lifetime US7163585B2 (en) | 2002-09-30 | 2004-03-19 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US11/620,289 Active 2025-04-09 US7811428B2 (en) | 2002-09-30 | 2007-01-05 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/803,994 Expired - Lifetime US7163585B2 (en) | 2002-09-30 | 2004-03-19 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US11/620,289 Active 2025-04-09 US7811428B2 (en) | 2002-09-30 | 2007-01-05 | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
Country Status (6)
Country | Link |
---|---|
US (3) | US6798519B2 (en) |
JP (1) | JP4585316B2 (en) |
KR (1) | KR100732260B1 (en) |
CN (1) | CN100367446C (en) |
AU (1) | AU2003274589A1 (en) |
WO (1) | WO2004030014A2 (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050147852A1 (en) * | 1999-12-10 | 2005-07-07 | Tocalo Co., Ltd. | Internal member for plasma-treating vessel and method of producing the same |
US20050225248A1 (en) * | 2004-03-30 | 2005-10-13 | Tokyo Electron Limited | Honeycomb optical window deposition shield and method for a plasma processing system |
US7137353B2 (en) | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US7147749B2 (en) | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US20080169588A1 (en) * | 2007-01-11 | 2008-07-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
US20080233016A1 (en) * | 2007-03-21 | 2008-09-25 | Verity Instruments, Inc. | Multichannel array as window protection |
US7678226B2 (en) | 2002-09-30 | 2010-03-16 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7780786B2 (en) | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
US7811428B2 (en) | 2002-09-30 | 2010-10-12 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US7846291B2 (en) | 1999-12-10 | 2010-12-07 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US8057600B2 (en) | 2002-09-30 | 2011-11-15 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US8118936B2 (en) | 2002-09-30 | 2012-02-21 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US10119188B2 (en) | 2013-06-20 | 2018-11-06 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US10336656B2 (en) | 2012-02-21 | 2019-07-02 | Applied Materials, Inc. | Ceramic article with reduced surface defect density |
US10364197B2 (en) | 2012-02-22 | 2019-07-30 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating |
US10443125B2 (en) | 2017-05-10 | 2019-10-15 | Applied Materials, Inc. | Flourination process to create sacrificial oxy-flouride layer |
US11572617B2 (en) | 2016-05-03 | 2023-02-07 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080264564A1 (en) * | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
US20040069223A1 (en) * | 2002-10-10 | 2004-04-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wall liner and slot liner for process chamber |
US6844260B2 (en) * | 2003-01-30 | 2005-01-18 | Micron Technology, Inc. | Insitu post atomic layer deposition destruction of active species |
KR101016913B1 (en) * | 2003-03-31 | 2011-02-22 | 도쿄엘렉트론가부시키가이샤 | A barrier layer for a processing element and a method of forming the same |
US7560376B2 (en) * | 2003-03-31 | 2009-07-14 | Tokyo Electron Limited | Method for adjoining adjacent coatings on a processing element |
US7182816B2 (en) * | 2003-08-18 | 2007-02-27 | Tokyo Electron Limited | Particulate reduction using temperature-controlled chamber shield |
KR100790393B1 (en) * | 2004-11-26 | 2008-01-02 | 삼성전자주식회사 | Plasma processing equipment |
US7552521B2 (en) * | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
US8475625B2 (en) * | 2006-05-03 | 2013-07-02 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
US8440049B2 (en) | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
US7838793B2 (en) * | 2006-07-21 | 2010-11-23 | Sub-One Technology, Inc. | System and method for treating surfaces of components |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
US7696117B2 (en) * | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US8066895B2 (en) * | 2008-02-28 | 2011-11-29 | Applied Materials, Inc. | Method to control uniformity using tri-zone showerhead |
US7987814B2 (en) * | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
US20100193368A1 (en) * | 2009-02-05 | 2010-08-05 | Chia-Wei Hsu | Method of forming multicolor aluminum alloy |
JP5424744B2 (en) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | Divided annular rib plasma processing equipment |
US8840725B2 (en) * | 2009-11-11 | 2014-09-23 | Applied Materials, Inc. | Chamber with uniform flow and plasma distribution |
TWI640039B (en) * | 2014-07-03 | 2018-11-01 | 美商西凱渥資訊處理科技公司 | Endpoint booster systems and methods for optical endpoint detection in wafer etch process |
JP6544902B2 (en) * | 2014-09-18 | 2019-07-17 | 東京エレクトロン株式会社 | Plasma processing system |
KR20160058490A (en) * | 2014-11-17 | 2016-05-25 | 삼성전자주식회사 | Plasma process apparatus having a view port |
US20180166301A1 (en) * | 2016-12-13 | 2018-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor manufacturing system |
US11670490B2 (en) * | 2017-09-29 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit fabrication system with adjustable gas injector |
US20200365375A1 (en) * | 2019-05-15 | 2020-11-19 | Applied Materials, Inc. | Stray plasma prevention apparatus for substrate process chamber |
CN112447474B (en) * | 2019-09-04 | 2022-11-04 | 中微半导体设备(上海)股份有限公司 | Plasma processor with movable ring |
US11880018B2 (en) * | 2021-03-12 | 2024-01-23 | Raytheon Company | Optical window with abrasion tolerance |
CN115621108A (en) * | 2021-07-16 | 2023-01-17 | 长鑫存储技术有限公司 | Semiconductor manufacturing equipment and method for cleaning deposits in chamber of semiconductor manufacturing equipment |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246479B1 (en) * | 1998-06-08 | 2001-06-12 | Lj Laboratories, L.L.C. | Integrated spectrometer assembly and methods |
US6373573B1 (en) * | 2000-03-13 | 2002-04-16 | Lj Laboratories L.L.C. | Apparatus for measuring optical characteristics of a substrate and pigments applied thereto |
US6519037B2 (en) * | 1999-12-23 | 2003-02-11 | Lj Laboratories, Llc | Spectrometer having optical unit including a randomized fiber optic implement |
US6570654B2 (en) * | 1997-01-02 | 2003-05-27 | Lj Laboratories Llc | Apparatus and method for measuring optical characteristics of an object |
US6590660B2 (en) * | 1999-12-23 | 2003-07-08 | Lj Laboratories Llc | Apparatus and method for measuring optical characteristics of an object |
Family Cites Families (161)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4310390A (en) | 1977-08-10 | 1982-01-12 | Lockheed Corporation | Protective coating process for aluminum and aluminum alloys |
US4357387A (en) | 1981-08-20 | 1982-11-02 | Subtex, Inc. | Flame resistant insulating fabric compositions prepared by plasma spraying |
JPS5857491A (en) | 1981-09-30 | 1983-04-05 | Sony Corp | Preparation of green fluorescent material |
JPH065155B2 (en) | 1984-10-12 | 1994-01-19 | 住友金属工業株式会社 | Furnace wall repair device for kiln |
US4593007A (en) | 1984-12-06 | 1986-06-03 | The Perkin-Elmer Corporation | Aluminum and silica clad refractory oxide thermal spray powder |
US4612077A (en) | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4842683A (en) | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US4877757A (en) | 1987-07-16 | 1989-10-31 | Texas Instruments Incorporated | Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma |
NO163412B (en) | 1988-01-25 | 1990-02-12 | Elkem Technology | The plasma torch. |
DE69015715T2 (en) | 1989-07-11 | 1995-08-17 | Sony Corp | Method of heat treating an optical oxide crystal and heat treatment apparatus therefor. |
US5334462A (en) | 1989-09-08 | 1994-08-02 | United Technologies Corporation | Ceramic material and insulating coating made thereof |
US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
US5126102A (en) * | 1990-03-15 | 1992-06-30 | Kabushiki Kaisha Toshiba | Fabricating method of composite material |
GB2242443B (en) * | 1990-03-28 | 1994-04-06 | Nisshin Flour Milling Co | Coated particles of inorganic or metallic materials and processes of producing the same |
US5180467A (en) * | 1990-08-08 | 1993-01-19 | Vlsi Technology, Inc. | Etching system having simplified diffuser element removal |
US5074456A (en) | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
DE4103994A1 (en) | 1991-02-11 | 1992-08-13 | Inst Elektroswarki Patona | PROTECTIVE COVER OF THE METAL-CERAMIC TYPE FOR ITEMS OF HEAT-RESISTANT ALLOYS |
DE69213802T2 (en) | 1991-04-09 | 1997-02-27 | Ngk Insulators Ltd | Use of an oxide layer to improve the oxidation and corrosion resistance of a gas turbine blades made of silicon nitride |
WO1993024275A1 (en) | 1992-06-01 | 1993-12-09 | Ice Blast International Ltd. | Particle blasting utilizing crystalline ice |
JPH06224137A (en) * | 1992-06-05 | 1994-08-12 | Applied Materials Inc | Integrated circuit structure processor having chemical corrosion resistant aluminum oxide protective film on surface of its quartz window which is in contact with corrosive chemical substance |
KR100276093B1 (en) | 1992-10-19 | 2000-12-15 | 히가시 데쓰로 | Plasma etching system |
US5302465A (en) * | 1992-10-26 | 1994-04-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Plasma sprayed ceramic thermal barrier coating for NiAl-based intermetallic alloys |
US5725960A (en) | 1992-12-28 | 1998-03-10 | Nippon Zeon Co., Ltd. | Molded articles having hard coat layer and method for producing same |
US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5362335A (en) | 1993-03-25 | 1994-11-08 | General Motors Corporation | Rare earth coating process for aluminum alloys |
KR100324792B1 (en) | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | Plasma processing apparatus |
US5891253A (en) | 1993-05-14 | 1999-04-06 | Applied Materials, Inc. | Corrosion resistant apparatus |
US5551190A (en) | 1993-05-19 | 1996-09-03 | Ohi Seisakusho Co., Ltd. | Slide door driving system |
US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5484752A (en) | 1993-11-12 | 1996-01-16 | Ube Industries, Ltd. | Ceramic composite material |
JP3308091B2 (en) | 1994-02-03 | 2002-07-29 | 東京エレクトロン株式会社 | Surface treatment method and plasma treatment device |
US5798016A (en) | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
US5680013A (en) | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US5651723A (en) | 1994-04-13 | 1997-07-29 | Viratec Thin Films, Inc. | Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings |
US5521790A (en) * | 1994-05-12 | 1996-05-28 | International Business Machines Corporation | Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization |
US5895586A (en) | 1994-05-17 | 1999-04-20 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum |
US5641375A (en) | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
DE9421671U1 (en) | 1994-08-26 | 1996-07-11 | Siemens AG, 80333 München | Discharge chamber for a plasma etching system in semiconductor production |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US5902763A (en) | 1995-01-19 | 1999-05-11 | Ube Industries, Inc. | Fused ceramic composite |
US5759360A (en) | 1995-03-13 | 1998-06-02 | Applied Materials, Inc. | Wafer clean sputtering process |
US6296740B1 (en) | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
US5534356A (en) * | 1995-04-26 | 1996-07-09 | Olin Corporation | Anodized aluminum substrate having increased breakdown voltage |
JP3208044B2 (en) | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
TW323387B (en) | 1995-06-07 | 1997-12-21 | Tokyo Electron Co Ltd | |
JP3164200B2 (en) | 1995-06-15 | 2001-05-08 | 住友金属工業株式会社 | Microwave plasma processing equipment |
DE19529627C1 (en) | 1995-08-11 | 1997-01-16 | Siemens Ag | Thermally conductive, electrically insulating connection and method for its production |
EP0777258A3 (en) | 1995-11-29 | 1997-09-17 | Applied Materials Inc | Self-cleaning plasma processing reactor |
US5894887A (en) | 1995-11-30 | 1999-04-20 | Applied Materials, Inc. | Ceramic dome temperature control using heat pipe structure and method |
JPH09167755A (en) * | 1995-12-15 | 1997-06-24 | Nec Corp | Plasma oxide film processor |
US5985102A (en) | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
US5955182A (en) | 1996-02-05 | 1999-09-21 | Kabushiki Kaisha Toshiba | Heat resisting member and its production method |
JPH09235662A (en) | 1996-02-28 | 1997-09-09 | Nittetsu Hard Kk | Formation of thermally sprayed coating |
CN1074689C (en) | 1996-04-04 | 2001-11-14 | E·O·帕通电子焊接研究院电子束工艺国际中心 | Method of producing on substrate of protective coatings with chemical composition and structure gradient across thickness and with top ceramic layer |
US6108189A (en) * | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
CA2205817C (en) | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
US5892278A (en) | 1996-05-24 | 1999-04-06 | Dai Nippon Printingco., Ltd. | Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same |
US5820723A (en) * | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US5952060A (en) | 1996-06-14 | 1999-09-14 | Applied Materials, Inc. | Use of carbon-based films in extending the lifetime of substrate processing system components |
JP3241270B2 (en) | 1996-06-25 | 2001-12-25 | 日本政策投資銀行 | Thermoelectric converter |
US5885402A (en) * | 1996-07-17 | 1999-03-23 | Applied Materials | Diagnostic head assembly for plasma chamber |
US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
US5882411A (en) * | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US6120640A (en) | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
US5925228A (en) | 1997-01-09 | 1999-07-20 | Sandia Corporation | Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material |
US5800621A (en) | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
JP2981184B2 (en) * | 1997-02-21 | 1999-11-22 | トーカロ株式会社 | Boiler heat transfer tube and method for producing boiler heat transfer tube with excellent effect of suppressing deposit adhesion on inner surface of tube |
US5843239A (en) * | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US5900064A (en) | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
US5851343A (en) * | 1997-05-16 | 1998-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protective shield around the inner edge of endpoint window in a plasma etching chamber |
US5994662A (en) | 1997-05-29 | 1999-11-30 | Applied Materials, Inc. | Unique baffle to deflect remote plasma clean gases |
US6143646A (en) | 1997-06-03 | 2000-11-07 | Motorola Inc. | Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation |
JP3707229B2 (en) | 1997-06-27 | 2005-10-19 | コニカミノルタビジネステクノロジーズ株式会社 | Electrophotographic photosensitive member and electrophotographic image forming apparatus using the same |
JP3362113B2 (en) | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | Corrosion-resistant member, wafer mounting member, and method of manufacturing corrosion-resistant member |
JPH1136076A (en) | 1997-07-16 | 1999-02-09 | Tokyo Electron Ltd | Cvd deposition apparatus and cvd deposition method |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US6106625A (en) | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
KR100258984B1 (en) | 1997-12-24 | 2000-08-01 | 윤종용 | Dry etching apparatus |
JP4217299B2 (en) | 1998-03-06 | 2009-01-28 | 東京エレクトロン株式会社 | Processing equipment |
US6129808A (en) | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
KR100265288B1 (en) | 1998-04-22 | 2000-10-02 | 윤종용 | Baffle of etching equipment for fabricating semiconductor device |
JP4037956B2 (en) | 1998-04-28 | 2008-01-23 | 東海カーボン株式会社 | Chamber inner wall protection member |
JP3810039B2 (en) | 1998-05-06 | 2006-08-16 | キヤノン株式会社 | Stage equipment |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6335293B1 (en) | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US6123791A (en) * | 1998-07-29 | 2000-09-26 | Applied Materials, Inc. | Ceramic composition for an apparatus and method for processing a substrate |
US6389506B1 (en) | 1998-08-07 | 2002-05-14 | Cisco Technology, Inc. | Block mask ternary cam |
JP4162773B2 (en) * | 1998-08-31 | 2008-10-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and detection window |
US6170429B1 (en) | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
JP3030287B1 (en) | 1998-10-09 | 2000-04-10 | 株式会社協同インターナショナル | Method for cleaning film forming apparatus, method for cleaning sputtering target, and cleaning apparatus used for these |
US6383964B1 (en) | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6123804A (en) | 1999-02-22 | 2000-09-26 | Applied Materials, Inc. | Sectional clamp ring |
US6221202B1 (en) | 1999-04-01 | 2001-04-24 | International Business Machines Corporation | Efficient plasma containment structure |
TW465017B (en) * | 1999-04-13 | 2001-11-21 | Applied Materials Inc | A corrosion-resistant protective coating for an apparatus and method for processing a substrate |
JP3911902B2 (en) * | 1999-04-16 | 2007-05-09 | 東京エレクトロン株式会社 | Processing apparatus and surface treatment method for metal parts |
US6444083B1 (en) | 1999-06-30 | 2002-09-03 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof |
JP2001023959A (en) | 1999-07-05 | 2001-01-26 | Mitsubishi Electric Corp | Plasma processing apparatus |
US6387817B1 (en) * | 1999-09-07 | 2002-05-14 | Agere Systems Guardian Corp. | Plasma confinement shield |
JP4285853B2 (en) | 1999-09-08 | 2009-06-24 | 東京エレクトロン株式会社 | Processing method |
US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
US6364949B1 (en) | 1999-10-19 | 2002-04-02 | Applied Materials, Inc. | 300 mm CVD chamber design for metal-organic thin film deposition |
US6265757B1 (en) | 1999-11-09 | 2001-07-24 | Agere Systems Guardian Corp. | Forming attached features on a semiconductor substrate |
JP3510993B2 (en) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | Plasma processing container inner member and method for manufacturing the same |
TW514996B (en) | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
JP3567855B2 (en) | 2000-01-20 | 2004-09-22 | 住友電気工業株式会社 | Wafer holder for semiconductor manufacturing equipment |
JP4272786B2 (en) * | 2000-01-21 | 2009-06-03 | トーカロ株式会社 | Electrostatic chuck member and manufacturing method thereof |
DE20104654U1 (en) * | 2000-03-15 | 2001-09-13 | Preising, Paul-Eric, 50968 Köln | Cleaning device for high-voltage system parts |
TW503449B (en) * | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
JP4422295B2 (en) | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | CVD equipment |
TWI290589B (en) | 2000-10-02 | 2007-12-01 | Tokyo Electron Ltd | Vacuum processing device |
US6413578B1 (en) | 2000-10-12 | 2002-07-02 | General Electric Company | Method for repairing a thermal barrier coating and repaired coating formed thereby |
JP2002151473A (en) * | 2000-11-13 | 2002-05-24 | Tokyo Electron Ltd | Plasma processing apparatus and its assembling method |
US20020090464A1 (en) * | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
US20040081746A1 (en) * | 2000-12-12 | 2004-04-29 | Kosuke Imafuku | Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment |
US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
US7128804B2 (en) * | 2000-12-29 | 2006-10-31 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
US6790242B2 (en) * | 2000-12-29 | 2004-09-14 | Lam Research Corporation | Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof |
US6613442B2 (en) | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
US6533910B2 (en) | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
CN1220989C (en) | 2001-02-07 | 2005-09-28 | 株式会社新王磁材 | Method of making material alloy for iron-based rare earth magnet |
US6830622B2 (en) | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
TW541586B (en) | 2001-05-25 | 2003-07-11 | Tokyo Electron Ltd | Substrate table, production method therefor and plasma treating device |
US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
US6527911B1 (en) | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
KR100431660B1 (en) | 2001-07-24 | 2004-05-17 | 삼성전자주식회사 | Dry Etching Apparatus for Manufacturing Semiconductor Devices |
US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
US6849306B2 (en) * | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
US6724140B2 (en) * | 2001-09-21 | 2004-04-20 | Fuji Photo Film Co., Ltd. | Organic light-emitting device |
KR100440500B1 (en) | 2001-12-07 | 2004-07-15 | 주식회사 코미코 | Ceramic parts production and repair for semiconductor fabrication by plasma spray process |
GB2383833A (en) | 2001-12-27 | 2003-07-09 | Perkins Engines Co Ltd | Piston with a ceramic reinforced ring groove |
US6776873B1 (en) | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
GB2386907B (en) * | 2002-03-27 | 2005-10-26 | Isle Coat Ltd | Process and device for forming ceramic coatings on metals and alloys, and coatings produced by this process |
JP3949504B2 (en) * | 2002-04-25 | 2007-07-25 | 英夫 吉田 | Method and apparatus for activation treatment of base material surface |
US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
US6852433B2 (en) * | 2002-07-19 | 2005-02-08 | Shin-Etsu Chemical Co., Ltd. | Rare-earth oxide thermal spray coated articles and powders for thermal spraying |
KR100460143B1 (en) * | 2002-08-02 | 2004-12-03 | 삼성전자주식회사 | Process chamber for using semiconductor fabricating equipment |
JP3776856B2 (en) | 2002-09-13 | 2006-05-17 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7137353B2 (en) | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US20040060779A1 (en) * | 2002-10-01 | 2004-04-01 | Charles Kreger | Distance compensating shim for clutch/brake and method of determining same |
KR100772740B1 (en) | 2002-11-28 | 2007-11-01 | 동경 엘렉트론 주식회사 | Internal member of a plasma processing vessel |
US6894769B2 (en) * | 2002-12-31 | 2005-05-17 | Tokyo Electron Limited | Monitoring erosion of system components by optical emission |
US6806949B2 (en) * | 2002-12-31 | 2004-10-19 | Tokyo Electron Limited | Monitoring material buildup on system components by optical emission |
JP2004241203A (en) * | 2003-02-04 | 2004-08-26 | Hitachi High-Technologies Corp | Treatment method of plasma treatment chamber wall |
CN100418187C (en) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | Plasma processing device, annular element and plasma processing method |
US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US7560376B2 (en) | 2003-03-31 | 2009-07-14 | Tokyo Electron Limited | Method for adjoining adjacent coatings on a processing element |
KR101016913B1 (en) | 2003-03-31 | 2011-02-22 | 도쿄엘렉트론가부시키가이샤 | A barrier layer for a processing element and a method of forming the same |
WO2007013184A1 (en) * | 2005-07-29 | 2007-02-01 | Tocalo Co., Ltd. | Y2o3 thermal sprayed film coated member and process for producing the same |
-
2002
- 2002-09-30 US US10/259,352 patent/US6798519B2/en not_active Expired - Lifetime
-
2003
- 2003-09-29 JP JP2004539389A patent/JP4585316B2/en not_active Expired - Fee Related
- 2003-09-29 KR KR1020057005449A patent/KR100732260B1/en active IP Right Grant
- 2003-09-29 WO PCT/IB2003/004957 patent/WO2004030014A2/en active Application Filing
- 2003-09-29 CN CNB038220806A patent/CN100367446C/en not_active Expired - Lifetime
- 2003-09-29 AU AU2003274589A patent/AU2003274589A1/en not_active Abandoned
-
2004
- 2004-03-19 US US10/803,994 patent/US7163585B2/en not_active Expired - Lifetime
-
2007
- 2007-01-05 US US11/620,289 patent/US7811428B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6570654B2 (en) * | 1997-01-02 | 2003-05-27 | Lj Laboratories Llc | Apparatus and method for measuring optical characteristics of an object |
US6246479B1 (en) * | 1998-06-08 | 2001-06-12 | Lj Laboratories, L.L.C. | Integrated spectrometer assembly and methods |
US6519037B2 (en) * | 1999-12-23 | 2003-02-11 | Lj Laboratories, Llc | Spectrometer having optical unit including a randomized fiber optic implement |
US6590660B2 (en) * | 1999-12-23 | 2003-07-08 | Lj Laboratories Llc | Apparatus and method for measuring optical characteristics of an object |
US6373573B1 (en) * | 2000-03-13 | 2002-04-16 | Lj Laboratories L.L.C. | Apparatus for measuring optical characteristics of a substrate and pigments applied thereto |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7879179B2 (en) | 1999-12-10 | 2011-02-01 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US20080066647A1 (en) * | 1999-12-10 | 2008-03-20 | Tocalo Co., Ltd. | Internal member for plasma-treating vessel and method of producing the same |
US7846291B2 (en) | 1999-12-10 | 2010-12-07 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US7364798B2 (en) * | 1999-12-10 | 2008-04-29 | Tocalo Co., Ltd. | Internal member for plasma-treating vessel and method of producing the same |
US20050147852A1 (en) * | 1999-12-10 | 2005-07-07 | Tocalo Co., Ltd. | Internal member for plasma-treating vessel and method of producing the same |
US8057600B2 (en) | 2002-09-30 | 2011-11-15 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US7147749B2 (en) | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US8118936B2 (en) | 2002-09-30 | 2012-02-21 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US7137353B2 (en) | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US7678226B2 (en) | 2002-09-30 | 2010-03-16 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7811428B2 (en) | 2002-09-30 | 2010-10-12 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US8117986B2 (en) | 2002-09-30 | 2012-02-21 | Tokyo Electron Limited | Apparatus for an improved deposition shield in a plasma processing system |
US8877002B2 (en) | 2002-11-28 | 2014-11-04 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
US8449715B2 (en) | 2002-11-28 | 2013-05-28 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
US7780786B2 (en) | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
WO2005104164A3 (en) * | 2004-03-30 | 2006-12-14 | Tokyo Electron Ltd | Honeycomb optical window deposition shield and method for a plasma processing system |
US7241397B2 (en) * | 2004-03-30 | 2007-07-10 | Tokyo Electron Limited | Honeycomb optical window deposition shield and method for a plasma processing system |
US20050225248A1 (en) * | 2004-03-30 | 2005-10-13 | Tokyo Electron Limited | Honeycomb optical window deposition shield and method for a plasma processing system |
WO2005104164A2 (en) * | 2004-03-30 | 2005-11-03 | Tokyo Electron Limited | Honeycomb optical window deposition shield and method for a plasma processing system |
US8097105B2 (en) | 2007-01-11 | 2012-01-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
US8585844B2 (en) | 2007-01-11 | 2013-11-19 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
US20080169588A1 (en) * | 2007-01-11 | 2008-07-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
US20080233016A1 (en) * | 2007-03-21 | 2008-09-25 | Verity Instruments, Inc. | Multichannel array as window protection |
US10336656B2 (en) | 2012-02-21 | 2019-07-02 | Applied Materials, Inc. | Ceramic article with reduced surface defect density |
US11279661B2 (en) | 2012-02-22 | 2022-03-22 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating |
US10364197B2 (en) | 2012-02-22 | 2019-07-30 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating |
US11053581B2 (en) | 2013-06-20 | 2021-07-06 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US10501843B2 (en) | 2013-06-20 | 2019-12-10 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US10119188B2 (en) | 2013-06-20 | 2018-11-06 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US11680308B2 (en) | 2013-06-20 | 2023-06-20 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US11572617B2 (en) | 2016-05-03 | 2023-02-07 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
US10563303B2 (en) | 2017-05-10 | 2020-02-18 | Applied Materials, Inc. | Metal oxy-flouride films based on oxidation of metal flourides |
US10443125B2 (en) | 2017-05-10 | 2019-10-15 | Applied Materials, Inc. | Flourination process to create sacrificial oxy-flouride layer |
Also Published As
Publication number | Publication date |
---|---|
JP4585316B2 (en) | 2010-11-24 |
WO2004030014A2 (en) | 2004-04-08 |
AU2003274589A8 (en) | 2004-04-19 |
US7811428B2 (en) | 2010-10-12 |
US20040173155A1 (en) | 2004-09-09 |
JP2006501648A (en) | 2006-01-12 |
US7163585B2 (en) | 2007-01-16 |
WO2004030014A3 (en) | 2004-12-02 |
CN1682340A (en) | 2005-10-12 |
US20040060516A1 (en) | 2004-04-01 |
AU2003274589A1 (en) | 2004-04-19 |
US20070102287A1 (en) | 2007-05-10 |
KR20050067406A (en) | 2005-07-01 |
CN100367446C (en) | 2008-02-06 |
KR100732260B1 (en) | 2007-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6798519B2 (en) | Method and apparatus for an improved optical window deposition shield in a plasma processing system | |
US7137353B2 (en) | Method and apparatus for an improved deposition shield in a plasma processing system | |
US6837966B2 (en) | Method and apparatus for an improved baffle plate in a plasma processing system | |
US7147749B2 (en) | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system | |
US7678226B2 (en) | Method and apparatus for an improved bellows shield in a plasma processing system | |
US7166166B2 (en) | Method and apparatus for an improved baffle plate in a plasma processing system | |
US7166200B2 (en) | Method and apparatus for an improved upper electrode plate in a plasma processing system | |
US7560376B2 (en) | Method for adjoining adjacent coatings on a processing element | |
US7291566B2 (en) | Barrier layer for a processing element and a method of forming the same | |
US20050098265A1 (en) | Method and apparatus for improved baffle plate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TOKYO ELECTRON LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NISHIMOTO, SHINYA;MITSUHASHI, KOUJI;SAIGUSA, HIDEHITO;AND OTHERS;REEL/FRAME:013568/0064 Effective date: 20021107 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
CC | Certificate of correction | ||
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |