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US4814293A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device Download PDF

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Publication number
US4814293A
US4814293A US07/191,299 US19129988A US4814293A US 4814293 A US4814293 A US 4814293A US 19129988 A US19129988 A US 19129988A US 4814293 A US4814293 A US 4814293A
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United States
Prior art keywords
layer
etching
hydrogen peroxide
titanium
etching solution
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Expired - Lifetime
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US07/191,299
Inventor
Jacques J. Van Oekel
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US Philips Corp
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US Philips Corp
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Assigned to U.S. PHILIPS CORPORATION reassignment U.S. PHILIPS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: VAN OEKEL, JACQUES J.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Definitions

  • the invention relates to a method of manufacturing a semiconductor device, in which a titanium-tungsten layer is provided on a substrate, and a layer masking during etching of the titanium-tungsten layer is provided on this layer, whereupon the titanium-tungsten layer is etched in an etching solution of hydrogen peroxide in water.
  • the above patent discloses an etching solution for titanium-tungsten, which contains ammonia besides hydrogen peroxide. Such a solution etches too rapidly and has the disadvantage to be unstable, as a result of which the content of hydrogen peroxide rapidly decreases.
  • the invention has inter alia for its object to avoid the disadvantages described at least to a considerable extent.
  • the method mentioned in the opening paragraph is therefore characterized in that the pH of the etching solution is adjusted by means of a buffer to a value between 1 and 6.
  • the invention is based inter alia on the recognition of the fact that a favourable homogeneous etching result is obtained when the pH is kept as constant as possible during the etching treatment.
  • ammonium is preferably used as the cation in the buffer.
  • the acid used in the buffer is preferably an organic acid, preferably acetic acid or citric acid.
  • a very favourable buffer is composed of acetic acid and ammonium acetate.
  • a concentration of 25 to 30% of hydrogen peroxide is used.
  • the masking layer for the titanium-tungsten layer consists preferably of aluminium or of photoresist. If aluminium is used, the aluminium layer is left on the titanium-tungsten layer after the etching treatment. The last-mentioned layer then serves, for example, as a diffusion barrier for the aluminium.
  • the titanium-tungsten layer may be provided directly on a semiconductor body, for example of silicon, of the substrate, but may also be provided, for example, on oxide present on a semiconductor body or moreover in the case of multilayer wiring on an aluminium layer already present on the substrate.
  • a substrate 1 is formed, for example, by providing a semiconductor body 2 of silicon in a usual manner with a silicon oxide layer 3, in which openings 4 are formed.
  • a titanium-tungsten layer 5 is provided on the substrate 1 and an aluminium layer 6 masking during etching of the titanium-tungsten layer is provided on this layer.
  • the layers 5 and 6 are obtained in a usual manner by sputtering.
  • a masking pattern desired in the layer 6 may be formed by plasma etching.
  • the layer 5 serves as a diffusion barrier for aluminium from the layer 6 to the silicon body 2 in the opening 4 and as a mask against attack of the silicon body during plasma etching of aluminium.
  • Parts 7 of the layer 5 exposed with respect to the layer 6 are etched in an etching solution of hydrogen peroxide in water.
  • a homogeneous etching of the layer 5 and also a homogeneous under-etching of the layer 5 under the layer 6 are obtained when the pH of the etching solution is adjusted by means of a buffer to a value between 1 and 6.
  • the under-etching of the layer 5 under the layer 6 is homogeneously less than 0.1 ⁇ m.
  • the etching process can be carried out constantly at the ambient temperature.
  • An etching solution in the case described of a titanium-tungsten layer 5 having a thickness of 0.1 ⁇ m obtained by sputtering (10% weight of Ti, 90% by weight of W) contains, for example
  • the pH is 4.0 and the temperature during etching is 22° C.
  • the layer 6 of aluminium containing 1 mol.% of silicon and having a thickness of 1.0 ⁇ m is also obtained by sputtering.
  • the etching time of the parts 7 of the layer 5 is 11 minutes and is homogeneous, which also appears from a uniform under-etching of the layer 5 under the layer 6 of less than 0.1 ⁇ m.
  • Example 2 the conditions are the same as in Example 1 with the difference that the concentration of hydrogen peroxide is reduced by half.
  • the etching time is now 21 minutes.
  • Example 1 The solution as described in Example 1 is reduced by means of nitric acid to a lower pH and is raised to a higher pH by means of sodium hydroxide, respectively.
  • the results are the same as described in Example 1 on the understanding that the etching time depends in the following manner upon the pH:
  • the results are the same as those in Example 1 with the difference that the etching time is 30 minutes.
  • the results are the same as those in Example 1 with the difference that the etching time is 23 minutes.
  • the layer 6 may consist of photoresist instead of of aluminium, analogous results being obtained.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention relates to the manufacture of a semiconductor device, in which a titanium-tungsten layer (5) must be etched. In order to obtain a homogeneous course of the etching process, according to the invention, the etching is effected in a buffered hydrogen peroxide solution having a pH between 1 and 6.

Description

The invention relates to a method of manufacturing a semiconductor device, in which a titanium-tungsten layer is provided on a substrate, and a layer masking during etching of the titanium-tungsten layer is provided on this layer, whereupon the titanium-tungsten layer is etched in an etching solution of hydrogen peroxide in water.
A method of the kind mentioned in the opening paragraph is known from U.S. Pat. No. 4,267,012.
The use of hydrogen peroxide solutions as etchant for titanium-tungsten layers has the disadvantage that the etching process has an inhomogeneous course, as a result of which the disadvantage occurs that the extent of under-etching of the titanium-tungsten layer below the masking layer can be locally greatly different and no straight tracks of titanium-tungsten can be formed below a masking layer.
When the solution is agitated during etching, the inhomogeneity during etching even increases, as a result of which, in the known methods, movement in the liquid must be avoided.
The above patent discloses an etching solution for titanium-tungsten, which contains ammonia besides hydrogen peroxide. Such a solution etches too rapidly and has the disadvantage to be unstable, as a result of which the content of hydrogen peroxide rapidly decreases.
The invention has inter alia for its object to avoid the disadvantages described at least to a considerable extent.
According to the invention, the method mentioned in the opening paragraph is therefore characterized in that the pH of the etching solution is adjusted by means of a buffer to a value between 1 and 6.
The invention is based inter alia on the recognition of the fact that a favourable homogeneous etching result is obtained when the pH is kept as constant as possible during the etching treatment.
It has been found that the etching solution used in the method according to the invention is very stable.
Moreover, a wide choice is found to be possible with regard to buffers to be used.
It is important that during the etching treatment no undesired substances are left on a semiconductor body of the substrate. Therefore, ammonium is preferably used as the cation in the buffer. The acid used in the buffer is preferably an organic acid, preferably acetic acid or citric acid.
A very favourable buffer is composed of acetic acid and ammonium acetate.
Preferably, a concentration of 25 to 30% of hydrogen peroxide is used.
The masking layer for the titanium-tungsten layer consists preferably of aluminium or of photoresist. If aluminium is used, the aluminium layer is left on the titanium-tungsten layer after the etching treatment. The last-mentioned layer then serves, for example, as a diffusion barrier for the aluminium.
The titanium-tungsten layer may be provided directly on a semiconductor body, for example of silicon, of the substrate, but may also be provided, for example, on oxide present on a semiconductor body or moreover in the case of multilayer wiring on an aluminium layer already present on the substrate.
The invention will now be described with reference to a few embodiments and the accompanying drawing.
In the drawing, a part of a semiconductor body is shown diagrammatically and in sectional view at a stage of manufacture by means of the method according to the invention.
In a method of manufacturing a semiconductor device, a substrate 1 is formed, for example, by providing a semiconductor body 2 of silicon in a usual manner with a silicon oxide layer 3, in which openings 4 are formed.
For contacting the silicon body 2, a titanium-tungsten layer 5 is provided on the substrate 1 and an aluminium layer 6 masking during etching of the titanium-tungsten layer is provided on this layer.
The layers 5 and 6 are obtained in a usual manner by sputtering. A masking pattern desired in the layer 6 may be formed by plasma etching. The layer 5 serves as a diffusion barrier for aluminium from the layer 6 to the silicon body 2 in the opening 4 and as a mask against attack of the silicon body during plasma etching of aluminium. Parts 7 of the layer 5 exposed with respect to the layer 6 are etched in an etching solution of hydrogen peroxide in water.
A homogeneous etching of the layer 5 and also a homogeneous under-etching of the layer 5 under the layer 6 are obtained when the pH of the etching solution is adjusted by means of a buffer to a value between 1 and 6.
When the thickness of the layer 5 is, for example, 0.1 μm and the thickness of the layer 6 is 1 μm, the under-etching of the layer 5 under the layer 6 is homogeneously less than 0.1 μm.
The etching process can be carried out constantly at the ambient temperature.
EXAMPLE 1
An etching solution, in the case described of a titanium-tungsten layer 5 having a thickness of 0.1 μm obtained by sputtering (10% weight of Ti, 90% by weight of W) contains, for example
60.0 g of CH3 COOH (100%)
77.0 g of CH3 COONH4,
880 ml of H2 O2 (30%).
The pH is 4.0 and the temperature during etching is 22° C. The layer 6 of aluminium containing 1 mol.% of silicon and having a thickness of 1.0 μm is also obtained by sputtering. The etching time of the parts 7 of the layer 5 is 11 minutes and is homogeneous, which also appears from a uniform under-etching of the layer 5 under the layer 6 of less than 0.1 μm.
EXAMPLE 2
In this case, the conditions are the same as in Example 1 with the difference that the concentration of hydrogen peroxide is reduced by half. The etching time is now 21 minutes.
EXAMPLE 3
The solution as described in Example 1 is reduced by means of nitric acid to a lower pH and is raised to a higher pH by means of sodium hydroxide, respectively. The results are the same as described in Example 1 on the understanding that the etching time depends in the following manner upon the pH:
______________________________________                                    
pH = 1         etching time = 20 minutes,                                 
pH = 3         etching time = 14 minutes,                                 
pH = 4         etching time = 11 minutes,                                 
pH = 5         etching time = 9 minutes,                                  
  pH = 5.8     etching time = 6.5 minutes.                                
______________________________________
EXAMPLE 4
The conditions are the same as in Example 1 with the difference that instead of acetic acid and ammonium acetate 1 mole of citric acid is used, which is brought to a pH=4 by means of sodium hydroxide. The results are the same as those in Example 1 with the difference that the etching time is 30 minutes.
EXAMPLE 5
The conditions are the same as in Example 1 with the difference that instead of acetic acid and ammonium acetate 1 mole of ammonium dihydrogen phosphate is used, which is brought to a pH=4 by means of sodium hydroxide. The results are the same as those in Example 1 with the difference that the etching time is 23 minutes.
The invention is not limited to the examples described. For example, the layer 6 may consist of photoresist instead of of aluminium, analogous results being obtained.
Otherwise, it will be clear to those skilled in the art that in the invention described above variations and modifications other than those described specifically herein may be used without departing from the scope of the invention.

Claims (20)

What is claimed is:
1. A method of manufacturing a semiconductor device, in which a titanium-tungsten layer is provided on a substrate and a layer masking during etching of the titanium-tungsten layer is provided on this layer, after which the titanium-tungsten layer is etched in an etching solution of hydrogen peroxide in water, characterized in that the pH of the etching solution is adjusted by means of a buffer to a value between 1 and 6.
2. A method as claimed in claim 1, characterized in that the cation used in the buffer is ammonium.
3. A method as claimed in claim 2, characterized in that the acid used in the buffer is preferably an organic acid.
4. A method as claimed in claim 3, characterized in that acetic acid or citric acid is used.
5. A method as claimed in claim 4, characterized in that a buffer of acetic acid and ammonium acetate is used.
6. A method as claimed in claim 5 characterized in that the concentration of hydrogen peroxide in the etching solution is 25 to 30%.
7. A method as claimed in claim 6, characterized in that an aluminium layer is used as the masking layer.
8. A method as claimed in claim 6, characterized in that a photoresist layer is used as the masking layer.
9. A method as claimed in claim 4, characterized in that the concentration of hydrogen peroxide in the etching solution is 25 to 30%.
10. A method as claimed in claim 3, characterized in that the concentration of hydrogen peroxide in the etching solution is 25 to 30%.
11. A method as claimed in claim 1, characterized in that the concentration of hydrogen peroxide in the etching solution is 25 to 30%.
12. A method as claimed in claim 3, characterized in that an aluminum layer is used as the masking layer.
13. A method as claimed in claim 11, characterized in that an aluminum layer is used as the masking layer.
14. A method as claimed in claim 1, characterized in that an aluminum layer is used as the masking layer.
15. A method as claimed in claim 3, characterized in that a photoresist layer is used as the masking layer.
16. A method as claimed in claim 11, characterized in that a photoresist layer is used as the masking layer.
17. A method as claimed in claim 1, characterized in that a photoresist layer is used as the masking layer.
18. A method as claimed in claim 1, characterized in that the acid used in the buffer is preferably an organic acid.
19. A method as claimed in claim 18, characterized in that acetic acid or citric acid is used.
20. A method as claimed in claim 18, characterized in that the concentration of hydrogen peroxide in the etching solution is 25 to 30%.
US07/191,299 1987-05-18 1988-05-06 Method of manufacturing a semiconductor device Expired - Lifetime US4814293A (en)

Applications Claiming Priority (2)

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NL8701184A NL8701184A (en) 1987-05-18 1987-05-18 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
NL8701184 1987-05-18

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EP (1) EP0292057B1 (en)
JP (1) JPS63305518A (en)
KR (1) KR970009862B1 (en)
DE (1) DE3874411T2 (en)
NL (1) NL8701184A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors
US5462638A (en) * 1994-06-15 1995-10-31 International Business Machines Corporation Selective etching of TiW for C4 fabrication
US5468343A (en) * 1993-03-19 1995-11-21 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors and method for evaluating GaAs surface
US5624874A (en) * 1991-04-29 1997-04-29 North America Philips Corporation Barrier layer enhancement in metallization scheme for semiconductor device fabrication
US5759437A (en) * 1996-10-31 1998-06-02 International Business Machines Corporation Etching of Ti-W for C4 rework
US5800726A (en) * 1995-07-26 1998-09-01 International Business Machines Corporation Selective chemical etching in microelectronics fabrication
US6130170A (en) * 1997-10-30 2000-10-10 International Business Machines Corporation Process improvements for titanium-tungsten etching in the presence of electroplated C4's
US6178972B1 (en) * 1994-12-06 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for manufacturing a semiconductor integrated circuit
US6332988B1 (en) 1999-06-02 2001-12-25 International Business Machines Corporation Rework process
US6413878B1 (en) 1998-07-30 2002-07-02 Motorola, Inc. Method of manufacturing electronic components
US20080029487A1 (en) * 2004-12-20 2008-02-07 Hirohisa Kikuyama Fine Treatment Agent and Fine Treatment Method Using Same
US20080124939A1 (en) * 2006-11-28 2008-05-29 International Business Machines Corporation Process of etching a titanium/tungsten surface and etchant used therein
US20080264898A1 (en) * 2007-04-27 2008-10-30 International Business Machines Corporation SELECTIVE ETCH OF TiW FOR CAPTURE PAD FORMATION
US20100163883A1 (en) * 2001-12-12 2010-07-01 Oh-Nam Kwon Manufacturing method of electro line for liquid crystal display device
US20110147341A1 (en) * 2008-09-09 2011-06-23 Showa Denko K.K. Etching solution for titanium-based metal, tungsten-based metal, titanium/tungsten-based metal or their nitrides

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US5246732A (en) * 1991-07-16 1993-09-21 U.S. Philips Corporation Method of providing a copper pattern on a dielectric substrate
US5374328A (en) * 1993-03-25 1994-12-20 Watkins Johnson Company Method of fabricating group III-V compound
JPH1187262A (en) * 1997-09-03 1999-03-30 Toshiba Corp Semiconductor device and manufacture thereof
KR100379824B1 (en) 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 Etchant and array substrate for electric device with Cu lines patterend on the array substrate using the etchant
DE10230252B4 (en) 2002-07-04 2013-10-17 Robert Bosch Gmbh Process for the production of integrated microsystems
US7244671B2 (en) 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
JP2009076601A (en) * 2007-09-19 2009-04-09 Nagase Chemtex Corp Etching solution
JP5169959B2 (en) * 2009-04-08 2013-03-27 信越半導体株式会社 Method for manufacturing light emitting device
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
WO2015054464A1 (en) * 2013-10-11 2015-04-16 E. I. Du Pont De Nemours And Company Removal composition for selectively removing hard mask and methods thereof

Citations (1)

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Publication number Priority date Publication date Assignee Title
SU707949A1 (en) * 1976-12-14 1980-01-05 Институт химии Уральского научного центра АН СССР Solution for tungsten pickling from aluminium surface

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US3841931A (en) * 1973-07-23 1974-10-15 Bell Telephone Labor Inc Mild acid etch for tungsten
US4443295A (en) * 1983-06-13 1984-04-17 Fairchild Camera & Instrument Corp. Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
SU707949A1 (en) * 1976-12-14 1980-01-05 Институт химии Уральского научного центра АН СССР Solution for tungsten pickling from aluminium surface

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
US5624874A (en) * 1991-04-29 1997-04-29 North America Philips Corporation Barrier layer enhancement in metallization scheme for semiconductor device fabrication
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors
US5468343A (en) * 1993-03-19 1995-11-21 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors and method for evaluating GaAs surface
US5462638A (en) * 1994-06-15 1995-10-31 International Business Machines Corporation Selective etching of TiW for C4 fabrication
EP0687751A1 (en) 1994-06-15 1995-12-20 International Business Machines Corporation Selective etching of TiW for C4 fabrication
US6178972B1 (en) * 1994-12-06 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for manufacturing a semiconductor integrated circuit
US6283835B1 (en) 1994-12-06 2001-09-04 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for manufacturing a semiconductor integrated circuit
US5800726A (en) * 1995-07-26 1998-09-01 International Business Machines Corporation Selective chemical etching in microelectronics fabrication
US5759437A (en) * 1996-10-31 1998-06-02 International Business Machines Corporation Etching of Ti-W for C4 rework
US6130170A (en) * 1997-10-30 2000-10-10 International Business Machines Corporation Process improvements for titanium-tungsten etching in the presence of electroplated C4's
US6413878B1 (en) 1998-07-30 2002-07-02 Motorola, Inc. Method of manufacturing electronic components
US6436300B2 (en) 1998-07-30 2002-08-20 Motorola, Inc. Method of manufacturing electronic components
US6332988B1 (en) 1999-06-02 2001-12-25 International Business Machines Corporation Rework process
US20100163883A1 (en) * 2001-12-12 2010-07-01 Oh-Nam Kwon Manufacturing method of electro line for liquid crystal display device
US8148182B2 (en) * 2001-12-12 2012-04-03 Lg Display Co., Ltd. Manufacturing method of electro line for liquid crystal display device
US20080029487A1 (en) * 2004-12-20 2008-02-07 Hirohisa Kikuyama Fine Treatment Agent and Fine Treatment Method Using Same
US7727415B2 (en) 2004-12-20 2010-06-01 Stella Chemifa Corporation Fine treatment agent and fine treatment method using same
US20080124939A1 (en) * 2006-11-28 2008-05-29 International Business Machines Corporation Process of etching a titanium/tungsten surface and etchant used therein
US7425278B2 (en) 2006-11-28 2008-09-16 International Business Machines Corporation Process of etching a titanium/tungsten surface and etchant used therein
US20080264898A1 (en) * 2007-04-27 2008-10-30 International Business Machines Corporation SELECTIVE ETCH OF TiW FOR CAPTURE PAD FORMATION
WO2008134412A1 (en) * 2007-04-27 2008-11-06 International Business Machines Corporation Selective etch of tiw for capture pad formation
US8025812B2 (en) 2007-04-27 2011-09-27 International Business Machines Corporation Selective etch of TiW for capture pad formation
US20110147341A1 (en) * 2008-09-09 2011-06-23 Showa Denko K.K. Etching solution for titanium-based metal, tungsten-based metal, titanium/tungsten-based metal or their nitrides

Also Published As

Publication number Publication date
DE3874411D1 (en) 1992-10-15
DE3874411T2 (en) 1993-04-08
EP0292057B1 (en) 1992-09-09
JPS63305518A (en) 1988-12-13
NL8701184A (en) 1988-12-16
EP0292057A1 (en) 1988-11-23
JPH0257339B2 (en) 1990-12-04
KR970009862B1 (en) 1997-06-18
KR880014662A (en) 1988-12-24

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