US3019142A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- US3019142A US3019142A US750893A US75089358A US3019142A US 3019142 A US3019142 A US 3019142A US 750893 A US750893 A US 750893A US 75089358 A US75089358 A US 75089358A US 3019142 A US3019142 A US 3019142A
- Authority
- US
- United States
- Prior art keywords
- germanium
- solution
- semiconductor device
- penetration
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 8
- 239000012047 saturated solution Substances 0.000 claims description 7
- 229960000583 acetic acid Drugs 0.000 claims description 6
- 239000012362 glacial acetic acid Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000007605 air drying Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 12
- 230000035515 penetration Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940093915 gynecological organic acid Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Definitions
- the present invention relates to semiconductor devices and more particularly to a method of producing a semiconductor device by diflfusion.
- the present invention provides a technique for solid state diffusion which utilizes the limited solubility of the group III and group V oxides in organic or inorganic acids or bases as means for controlling the initial concentration.
- Another object of the invention is to provide a novel diifusion method for producing semiconductor devices, which is easily adapted to large scale production with a minimum of equipment and operations.
- Another object of the invention is to provide a method of diffusion in which the penetration can be reproduced with extreme accuracy.
- Another object of the invention is to provide a method of diffusion in which no objectionable glass formation is present.
- Another object of the invention is to provide a novel solid state diffusion method for semiconductors.
- Reproducible and uniform impurity penetration which will provide flat junctions in semiconductor devices, can only be produced from a uniform planar source concentration.
- This is accomplished in the present invention by preparing a saturated solution by mixing group III or group V oxides with organic acids, inorganic acids or bases. The mixture is agitated and then allowed to settle. The excess oxides may be removed by filtering. Wafers of semiconductor material, for example silicon or germanium, are then coated with the mixture and allowed to air-dry. After drying, the wafers are fired at a temperature so that the oxides do not alloy but diffuse into the semiconductor wafer. Difiusion is governed by the following:
- X is the penetration in millimeters
- D is the diffusion coefficient in square centimeters per second
- T is the temperature in degrees centigrade
- C is the concentration of the mixture.
- a saturated solution of antimony trioxide was prepared in which a quantity of chemically pure grade of antimony trioxide (Sb O was mixed with a chemically pure grade of glacial acetic acid. The mixture was agitated at room temperature and allowed to settle. The saturated solution was filtered and used to coat lapped germanium wafers. The coated wafers were air-dried leaving a thin film of Sb O thereon. Next, the coated wafers were fired at 900 C. for three hours in a nitrogen atmosphere. This gave an N diffusion into P type germanium of 3.3 mils. At the aforenoted temperature, the germanium reduced the Sb O very slowly so that the residual antimony diffused into the germanium thusly:
- a batch of germanium wafer-s were coated with the solution and processed as above except that the firing was in a reducing atmosphere.
- the penetration was found to be the same as for the nitrogen.
- indium hydroxide was mixed with glacial acetic acid, agitated at room temperature, allowed to settle and the excess indium hydroxide filtered out. Lapped semiconductor wafers were coated with the mixture, allowed to air-dry and then fired at 900 C. for a period of three hours.
- a method for fabricating a semiconductor device comprising producing a saturated solution by dissolving a quantity of antimony trioxide in glacial acetic acid, coating a semiconductor wafer selected from the group consisting of germanium and silicon with the solution, air-drying said water, and firing at 900 C. for three hours.
- a method for producing a drift transistor comprising preparing a saturated solution by dissolving a quantity of antimony trioxide in glacial acetic acid, coating a semiconductor wafer selected from the group consisting of germanium and silicon with said solution, allowing the coated wafer to air-dry, and firing said wafer at a temperature to reduce the oxide slowly so that the residual base metal diffuses into the Wafer.
- a method for producing a diffused transistor comprising preparing a saturated solution by dissolving a quantity of indium hydroxide in glacial acetic acid, coatgroup consisting of germanium and silicon material with said solution, air-drying said water and firing M900 C. for three hours.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Catalysts (AREA)
Description
United States Patent 3,019,142 SEMICONDUCTOR DEVICE Charles Z. Leinkram, Port Chester, N.Y., asslgnor to The Bendix Corporation, a corporation of Delaware No Drawing. Filed July 25, 1958, Ser. No. 750,893 4 Claims. (Cl. 148-15) The present invention relates to semiconductor devices and more particularly to a method of producing a semiconductor device by diflfusion.
The role of diffusion in the fabrication of semiconductor devices has resulted in devices having improved characteristics, such for example as enabling silicon power rectifiers to handle higher currents and in the drift transistors, higher frequencies.
With the diffusion techniques currently in use it is difiicult to attain and control the deep penetration, hence, difficult to obtain uniform results in production. Further, the present processes require complex equipment.
The present invention provides a technique for solid state diffusion which utilizes the limited solubility of the group III and group V oxides in organic or inorganic acids or bases as means for controlling the initial concentration.
It is an object of the present invention to provide an improved method for fabricating semiconductor devices.
Another object of the invention is to provide a novel diifusion method for producing semiconductor devices, which is easily adapted to large scale production with a minimum of equipment and operations.
Another object of the invention is to provide a method of diffusion in which the penetration can be reproduced with extreme accuracy.
. Another object of the invention is to provide a method of diffusion in which no objectionable glass formation is present.
Another object of the invention is to provide a novel solid state diffusion method for semiconductors.
The above and other objects and features of the invention will appear more fully hereinafter from a consideration of the following description.
Reproducible and uniform impurity penetration, which will provide flat junctions in semiconductor devices, can only be produced from a uniform planar source concentration. This is accomplished in the present invention by preparing a saturated solution by mixing group III or group V oxides with organic acids, inorganic acids or bases. The mixture is agitated and then allowed to settle. The excess oxides may be removed by filtering. Wafers of semiconductor material, for example silicon or germanium, are then coated with the mixture and allowed to air-dry. After drying, the wafers are fired at a temperature so that the oxides do not alloy but diffuse into the semiconductor wafer. Difiusion is governed by the following:
X is the penetration in millimeters,
D is the diffusion coefficient in square centimeters per second,
T is the temperature in degrees centigrade,
i is the time,
C is the concentration of the mixture.
3,019,142 Patented Jan. 30, 1962 From the above the time and temperatures for the different oxides and solutions are obtainable.
In a specific example, a saturated solution of antimony trioxide was prepared in which a quantity of chemically pure grade of antimony trioxide (Sb O was mixed with a chemically pure grade of glacial acetic acid. The mixture was agitated at room temperature and allowed to settle. The saturated solution Was filtered and used to coat lapped germanium wafers. The coated wafers were air-dried leaving a thin film of Sb O thereon. Next, the coated wafers were fired at 900 C. for three hours in a nitrogen atmosphere. This gave an N diffusion into P type germanium of 3.3 mils. At the aforenoted temperature, the germanium reduced the Sb O very slowly so that the residual antimony diffused into the germanium thusly:
(2) Sb O +3Ge 900 C.=2Sb+3GeO The concentration decreased as the penetration increased, hence, a device utilizing this method as an N+N or P+P will have a drift efiect.
A batch of germanium wafer-s were coated with the solution and processed as above except that the firing was in a reducing atmosphere. The penetration was found to be the same as for the nitrogen.
In another specific example, indium hydroxide was mixed with glacial acetic acid, agitated at room temperature, allowed to settle and the excess indium hydroxide filtered out. Lapped semiconductor wafers were coated with the mixture, allowed to air-dry and then fired at 900 C. for a period of three hours.
While specific time and temperature have been given to the specific examples, it is understood that other times and temperatures may be used. They are related to the penetration desired and will vary accordingly.
With the method set forth penetrations have been reproduced to within 0.01 mil. This accuracy of control of reproduced penetrations is possible by maintaining constant the concentration of the solution. Thus, with controlled time and temperature, together with maintaining the concentration of the solution constant, it is possible to reproduce a predetermined penetration.
Although only two specific examples of the invention have been described, various changes in the form and relative arrangement of the parts, which will. now appear to those skilled in the art, may be made without departing from the scope of the invention.
What is claimed is:
l. A method for fabricating a semiconductor device, comprising producing a saturated solution by dissolving a quantity of antimony trioxide in glacial acetic acid, coating a semiconductor wafer selected from the group consisting of germanium and silicon with the solution, air-drying said water, and firing at 900 C. for three hours.
2. A method for producing a drift transistor compris ing preparing a saturated solution by dissolving a quantity of antimony trioxide in glacial acetic acid, coating a semiconductor wafer selected from the group consisting of germanium and silicon with said solution, allowing the coated wafer to air-dry, and firing said wafer at a temperature to reduce the oxide slowly so that the residual base metal diffuses into the Wafer.
3. A method for producing a diffused transistor comprising preparing a saturated solution by dissolving a quantity of indium hydroxide in glacial acetic acid, coatgroup consisting of germanium and silicon material with said solution, air-drying said water and firing M900 C. for three hours.
References Cited in the file of this patent UNITED STATES PATENTS Sparks Oct. 20, 1953 Fuller -a June 4, 1957 Armstrong Sept. 17, 1957
Claims (1)
1. A METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE, COMPRISING PRODUCING A SATURATED SOLUTION BY DISSOLVING A QUANTITY OF ANTIMONY TRIOXIDE IN GLACIAL ACETIC ACID, COATING A SEMICONDUCTOR WAFER SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON WITH THE SOLUTION, AIR-DRYING SAID WAFER, AND FIRING AT 900*C. FOR THREE HOURS.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US750893A US3019142A (en) | 1958-07-25 | 1958-07-25 | Semiconductor device |
| GB22071/59A GB892028A (en) | 1958-07-25 | 1959-06-26 | Semiconductor device |
| FR798872A FR1229143A (en) | 1958-07-25 | 1959-06-30 | Process for manufacturing semiconductor organs, in particular transistrons, and organs obtained |
| DEB54040A DE1204495B (en) | 1958-07-25 | 1959-07-16 | Method for producing semiconductors, in particular transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US750893A US3019142A (en) | 1958-07-25 | 1958-07-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3019142A true US3019142A (en) | 1962-01-30 |
Family
ID=25019560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US750893A Expired - Lifetime US3019142A (en) | 1958-07-25 | 1958-07-25 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3019142A (en) |
| DE (1) | DE1204495B (en) |
| FR (1) | FR1229143A (en) |
| GB (1) | GB892028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870576A (en) * | 1970-04-29 | 1975-03-11 | Ilya Leonidovich Isitovsky | Method of making a profiled p-n junction in a plate of semiconductive material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4632710A (en) * | 1983-05-10 | 1986-12-30 | Raytheon Company | Vapor phase epitaxial growth of carbon doped layers of Group III-V materials |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2794846A (en) * | 1955-06-28 | 1957-06-04 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
| US2806807A (en) * | 1955-08-23 | 1957-09-17 | Gen Electric | Method of making contacts to semiconductor bodies |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2828232A (en) * | 1956-05-01 | 1958-03-25 | Hughes Aircraft Co | Method for producing junctions in semi-conductor device |
-
1958
- 1958-07-25 US US750893A patent/US3019142A/en not_active Expired - Lifetime
-
1959
- 1959-06-26 GB GB22071/59A patent/GB892028A/en not_active Expired
- 1959-06-30 FR FR798872A patent/FR1229143A/en not_active Expired
- 1959-07-16 DE DEB54040A patent/DE1204495B/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2794846A (en) * | 1955-06-28 | 1957-06-04 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
| US2806807A (en) * | 1955-08-23 | 1957-09-17 | Gen Electric | Method of making contacts to semiconductor bodies |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870576A (en) * | 1970-04-29 | 1975-03-11 | Ilya Leonidovich Isitovsky | Method of making a profiled p-n junction in a plate of semiconductive material |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1204495B (en) | 1965-11-04 |
| FR1229143A (en) | 1960-09-05 |
| GB892028A (en) | 1962-03-21 |
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