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US2221614A - Method of manufacturing selenium rectifiers - Google Patents

Method of manufacturing selenium rectifiers Download PDF

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Publication number
US2221614A
US2221614A US289790A US28979039A US2221614A US 2221614 A US2221614 A US 2221614A US 289790 A US289790 A US 289790A US 28979039 A US28979039 A US 28979039A US 2221614 A US2221614 A US 2221614A
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US
United States
Prior art keywords
selenium
aluminum
selenium rectifiers
manufacturing
iron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US289790A
Inventor
Siebert Ernst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric and Manufacturing Co filed Critical Westinghouse Electric and Manufacturing Co
Application granted granted Critical
Publication of US2221614A publication Critical patent/US2221614A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08Preparation of the foundation plate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14Treatment of the complete device, e.g. by electroforming to form a barrier
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/964Roughened surface

Definitions

  • the support of aluminum, magnesium, alloys thereof or of an equivalent light metal is pickled before applying thereto the selenium in order to roughen the surface.
  • the advantage obtained thereby is probably based upon the .fact that the Jet sand blast causes sharp tiny points to. lie-produced on the surface. ⁇ The selenium adheres insuifi ciently or not at all to these sharp'points. Consequently, the counter-electrode which is normally sprayed ontothe selenium coating easily comes into direct contact with these points of the light metal support,.thus causing short-circults. If it should not bepossible to eliminate these short-circuits during theforming process or similar processes of treatment. the element" is of no value.
  • the pickling has furthermore the advantage that it is not so criticalras the treat- 80 ment by means of a sand Jet; however, the joint is above all more intimate and more durable than when roughening the surface by means ofga sand jet and consequently the seasoning effect of the rectifiers is decreased.
  • a foreignclayenparticularly an oxide layer preventsundercircumstances the so formation of such anintermediate-layen so that the necessary adhesion is not broughtaboutj f
  • a rectifier according to to*thc. invcntion1i8 manufactured. for instance in the. following manner.
  • a support which may consist of c'ommercial aluminum is pickled in diluted hot'hy drochloric acid to which is added one gram of iron .per liter.
  • the plate is then heat treated in a furnace at a temperature somewhat about 200 degree centi-q 10 grade for one or more.hours, care being taken to ensure a sufficient amount of air to be admitted.
  • the selenium is converted into an electrically conductive state.
  • the selenium coating is then subjected for a short time 16 to the action of sulphur vapors. -In this manner a discontinuous film of sulphur is produced on the selenium coating, on which film is sprayed a layer of a metal of low fusibility, for instance, an alloy of lead and bismuth or of cadmium and 90 bismuth.
  • the rectifier element thus produced is then formed by the action of an electric current by applying in the inverse direction a direct voltage which increases with increasing resistance in the 25 inverse direction, for instance, from 5 to about '18 volts, the current flowing atthe beginning in the inverse direction thus decreasing under the 1 action of the voltage to a few milliamperes.
  • V 1 The method of manufacturing a selenium rectifier which consists of melting a. selenium coating on a support of light metal, for instance, aluminum, magnesium or the 19.110575 thereof,

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

Patented Nov. 12, 1940 v r f UNITED STATES.
PATENT OFFICE METHOD OF MANUFACTURING SELENIUM Ernst Sieberh'Beriin-Siemensstadt, Germany, assignor to Westinghouse Electric a Manufacturing Company, East Pittsbnrgh h, a corporation of Pennsylvania No Drawing. Application August 12, 1939, Serial No. 289,790. In Germany Augnstflo, 1938 4 Claims. (Cl 175-866) and the selenium isas satisfactory as possible. both from a mechanical and electrical point of I view. To this end, the jet sandblast may be employed to advantage. 1
According to the invention the support of aluminum, magnesium, alloys thereof or of an equivalent light metal is pickled before applying thereto the selenium in order to roughen the surface. The advantage obtained thereby is probably based upon the .fact that the Jet sand blast causes sharp tiny points to. lie-produced on the surface. \The selenium adheres insuifi ciently or not at all to these sharp'points. Consequently, the counter-electrode which is normally sprayed ontothe selenium coating easily comes into direct contact with these points of the light metal support,.thus causing short-circults. If it should not bepossible to eliminate these short-circuits during theforming process or similar processes of treatment. the element" is of no value. The pickling has furthermore the advantage that it is not so criticalras the treat- 80 ment by means of a sand Jet; however, the joint is above all more intimate and more durable than when roughening the surface by means ofga sand jet and consequently the seasoning effect of the rectifiers is decreased.
so When pickling an aluminum surface, hydro-f chloric acid with a slight additlonof' iron is. employed according to the invention to 5 Par icularadvantage. One gram of .iron in onelitr-of f not hydrochlorioacid dilutedin the ratio 1:1 0 gives particularly satisfactory results. 'By' pickling with such an agent, the to which the selenium may adhere is increased. on
the one hand and on the other hand it is freed in an effective manner of .the foreign layers which do not co'nsistofxpure aluminum. The
adhesion is obviously based onthje formation of selenide of aluminum-inlthe=form of an intermediate layer. A foreignclayenparticularly an oxide layer preventsundercircumstances the so formation of such anintermediate-layen so that the necessary adhesion is not broughtaboutj f A rectifier according to to*thc. invcntion1i8 manufactured. for instance," in the. following manner. A support which may consist of c'ommercial aluminum is pickled in diluted hot'hy drochloric acid to which is added one gram of iron .per liter.
T0 the surface which when pickled must be protected against furtherchemical attacks, molten selenium is applied and subjected in a press to a suillcient pressure which ensures a proper and uniformdistributionof the selenium-on the surface of the aluminum plate.
The plate is then heat treated in a furnace at a temperature somewhat about 200 degree centi-q 10 grade for one or more.hours, care being taken to ensure a sufficient amount of air to be admitted.
During this period the selenium is converted into an electrically conductive state. The selenium coating is then subjected for a short time 16 to the action of sulphur vapors. -In this manner a discontinuous film of sulphur is produced on the selenium coating, on which film is sprayed a layer of a metal of low fusibility, for instance, an alloy of lead and bismuth or of cadmium and 90 bismuth. The rectifier element thus produced is then formed by the action of an electric current by applying in the inverse direction a direct voltage which increases with increasing resistance in the 25 inverse direction, for instance, from 5 to about '18 volts, the current flowing atthe beginning in the inverse direction thus decreasing under the 1 action of the voltage to a few milliamperes.
whatis claimed is: V 1. The method of manufacturing a selenium rectifier which consists of melting a. selenium coating on a support of light metal, for instance, aluminum, magnesium or the 19.110575 thereof,
which has been pickled inhydrochloric acid with 35 aaslight addition of iron before applying the selenium thereto, heat treating said rectifier at above substantially 200 degrees Centigrade, and
selenium. I 0
i spraying a of metal of low fusibility on said 1 t 2. The method asset forth in claim 1, characterized inthat the surface'is pickled in hydrochloric acid with an addition of iron amounting to substantially -1 gram of iron per liter 'of hydrochloric acid. d5 "3. The method as set forth in claim 1, characterized in that the pickling is eflected in diluted hot hydrochloric acid.
4. The method as set forth in claim 1, characterized in that the pickling is continued until 0 the surface of the discs assumes a mar-bled grey appearance. 7
' ERNST SIEBERT.
US289790A 1938-08-16 1939-08-12 Method of manufacturing selenium rectifiers Expired - Lifetime US2221614A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES15120D DE922896C (en) 1938-08-16 1938-08-16 Method of manufacturing a selenium rectifier

Publications (1)

Publication Number Publication Date
US2221614A true US2221614A (en) 1940-11-12

Family

ID=7474837

Family Applications (1)

Application Number Title Priority Date Filing Date
US289790A Expired - Lifetime US2221614A (en) 1938-08-16 1939-08-12 Method of manufacturing selenium rectifiers

Country Status (5)

Country Link
US (1) US2221614A (en)
BE (1) BE435957A (en)
CH (1) CH214717A (en)
DE (1) DE922896C (en)
FR (1) FR858998A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2607832A (en) * 1947-07-19 1952-08-19 Vickers Inc Devices which have selenium as constituent parts thereof
US2869057A (en) * 1951-12-18 1959-01-13 Itt Electric current rectifier
DE973445C (en) * 1941-07-12 1960-02-18 Int Standard Electric Corp Process for the production of metal plates covered with selenium for rectifiers, photo elements and the like. like

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2035022A (en) * 1931-03-28 1936-03-24 Sprague Specialties Co Electrolytic device
GB433818A (en) * 1933-05-31 1935-08-21 Joseph Barry Brennan Improvements in and relating to electrolytic devices
FR774344A (en) * 1934-03-15 1934-12-05 Suddeutsche App Fabrik G M B H Improvements to rectifiers with metal rectifier placed between two electrodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973445C (en) * 1941-07-12 1960-02-18 Int Standard Electric Corp Process for the production of metal plates covered with selenium for rectifiers, photo elements and the like. like
US2607832A (en) * 1947-07-19 1952-08-19 Vickers Inc Devices which have selenium as constituent parts thereof
US2869057A (en) * 1951-12-18 1959-01-13 Itt Electric current rectifier

Also Published As

Publication number Publication date
BE435957A (en) 1939-09-30
CH214717A (en) 1941-05-15
FR858998A (en) 1940-12-07
DE922896C (en) 1955-01-27

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