US2221614A - Method of manufacturing selenium rectifiers - Google Patents
Method of manufacturing selenium rectifiers Download PDFInfo
- Publication number
- US2221614A US2221614A US289790A US28979039A US2221614A US 2221614 A US2221614 A US 2221614A US 289790 A US289790 A US 289790A US 28979039 A US28979039 A US 28979039A US 2221614 A US2221614 A US 2221614A
- Authority
- US
- United States
- Prior art keywords
- selenium
- aluminum
- selenium rectifiers
- manufacturing
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 15
- 229910052711 selenium Inorganic materials 0.000 title description 15
- 239000011669 selenium Substances 0.000 title description 15
- 238000004519 manufacturing process Methods 0.000 title description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005554 pickling Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000004576 sand Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/964—Roughened surface
Definitions
- the support of aluminum, magnesium, alloys thereof or of an equivalent light metal is pickled before applying thereto the selenium in order to roughen the surface.
- the advantage obtained thereby is probably based upon the .fact that the Jet sand blast causes sharp tiny points to. lie-produced on the surface. ⁇ The selenium adheres insuifi ciently or not at all to these sharp'points. Consequently, the counter-electrode which is normally sprayed ontothe selenium coating easily comes into direct contact with these points of the light metal support,.thus causing short-circults. If it should not bepossible to eliminate these short-circuits during theforming process or similar processes of treatment. the element" is of no value.
- the pickling has furthermore the advantage that it is not so criticalras the treat- 80 ment by means of a sand Jet; however, the joint is above all more intimate and more durable than when roughening the surface by means ofga sand jet and consequently the seasoning effect of the rectifiers is decreased.
- a foreignclayenparticularly an oxide layer preventsundercircumstances the so formation of such anintermediate-layen so that the necessary adhesion is not broughtaboutj f
- a rectifier according to to*thc. invcntion1i8 manufactured. for instance in the. following manner.
- a support which may consist of c'ommercial aluminum is pickled in diluted hot'hy drochloric acid to which is added one gram of iron .per liter.
- the plate is then heat treated in a furnace at a temperature somewhat about 200 degree centi-q 10 grade for one or more.hours, care being taken to ensure a sufficient amount of air to be admitted.
- the selenium is converted into an electrically conductive state.
- the selenium coating is then subjected for a short time 16 to the action of sulphur vapors. -In this manner a discontinuous film of sulphur is produced on the selenium coating, on which film is sprayed a layer of a metal of low fusibility, for instance, an alloy of lead and bismuth or of cadmium and 90 bismuth.
- the rectifier element thus produced is then formed by the action of an electric current by applying in the inverse direction a direct voltage which increases with increasing resistance in the 25 inverse direction, for instance, from 5 to about '18 volts, the current flowing atthe beginning in the inverse direction thus decreasing under the 1 action of the voltage to a few milliamperes.
- V 1 The method of manufacturing a selenium rectifier which consists of melting a. selenium coating on a support of light metal, for instance, aluminum, magnesium or the 19.110575 thereof,
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Electroplating Methods And Accessories (AREA)
Description
Patented Nov. 12, 1940 v r f UNITED STATES.
PATENT OFFICE METHOD OF MANUFACTURING SELENIUM Ernst Sieberh'Beriin-Siemensstadt, Germany, assignor to Westinghouse Electric a Manufacturing Company, East Pittsbnrgh h, a corporation of Pennsylvania No Drawing. Application August 12, 1939, Serial No. 289,790. In Germany Augnstflo, 1938 4 Claims. (Cl 175-866) and the selenium isas satisfactory as possible. both from a mechanical and electrical point of I view. To this end, the jet sandblast may be employed to advantage. 1
According to the invention the support of aluminum, magnesium, alloys thereof or of an equivalent light metal is pickled before applying thereto the selenium in order to roughen the surface. The advantage obtained thereby is probably based upon the .fact that the Jet sand blast causes sharp tiny points to. lie-produced on the surface. \The selenium adheres insuifi ciently or not at all to these sharp'points. Consequently, the counter-electrode which is normally sprayed ontothe selenium coating easily comes into direct contact with these points of the light metal support,.thus causing short-circults. If it should not bepossible to eliminate these short-circuits during theforming process or similar processes of treatment. the element" is of no value. The pickling has furthermore the advantage that it is not so criticalras the treat- 80 ment by means of a sand Jet; however, the joint is above all more intimate and more durable than when roughening the surface by means ofga sand jet and consequently the seasoning effect of the rectifiers is decreased.
so When pickling an aluminum surface, hydro-f chloric acid with a slight additlonof' iron is. employed according to the invention to 5 Par icularadvantage. One gram of .iron in onelitr-of f not hydrochlorioacid dilutedin the ratio 1:1 0 gives particularly satisfactory results. 'By' pickling with such an agent, the to which the selenium may adhere is increased. on
the one hand and on the other hand it is freed in an effective manner of .the foreign layers which do not co'nsistofxpure aluminum. The
adhesion is obviously based onthje formation of selenide of aluminum-inlthe=form of an intermediate layer. A foreignclayenparticularly an oxide layer preventsundercircumstances the so formation of such anintermediate-layen so that the necessary adhesion is not broughtaboutj f A rectifier according to to*thc. invcntion1i8 manufactured. for instance," in the. following manner. A support which may consist of c'ommercial aluminum is pickled in diluted hot'hy drochloric acid to which is added one gram of iron .per liter.
T0 the surface which when pickled must be protected against furtherchemical attacks, molten selenium is applied and subjected in a press to a suillcient pressure which ensures a proper and uniformdistributionof the selenium-on the surface of the aluminum plate.
The plate is then heat treated in a furnace at a temperature somewhat about 200 degree centi-q 10 grade for one or more.hours, care being taken to ensure a sufficient amount of air to be admitted.
During this period the selenium is converted into an electrically conductive state. The selenium coating is then subjected for a short time 16 to the action of sulphur vapors. -In this manner a discontinuous film of sulphur is produced on the selenium coating, on which film is sprayed a layer of a metal of low fusibility, for instance, an alloy of lead and bismuth or of cadmium and 90 bismuth. The rectifier element thus produced is then formed by the action of an electric current by applying in the inverse direction a direct voltage which increases with increasing resistance in the 25 inverse direction, for instance, from 5 to about '18 volts, the current flowing atthe beginning in the inverse direction thus decreasing under the 1 action of the voltage to a few milliamperes.
whatis claimed is: V 1. The method of manufacturing a selenium rectifier which consists of melting a. selenium coating on a support of light metal, for instance, aluminum, magnesium or the 19.110575 thereof,
which has been pickled inhydrochloric acid with 35 aaslight addition of iron before applying the selenium thereto, heat treating said rectifier at above substantially 200 degrees Centigrade, and
selenium. I 0
i spraying a of metal of low fusibility on said 1 t 2. The method asset forth in claim 1, characterized inthat the surface'is pickled in hydrochloric acid with an addition of iron amounting to substantially -1 gram of iron per liter 'of hydrochloric acid. d5 "3. The method as set forth in claim 1, characterized in that the pickling is eflected in diluted hot hydrochloric acid.
4. The method as set forth in claim 1, characterized in that the pickling is continued until 0 the surface of the discs assumes a mar-bled grey appearance. 7
' ERNST SIEBERT.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES15120D DE922896C (en) | 1938-08-16 | 1938-08-16 | Method of manufacturing a selenium rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
US2221614A true US2221614A (en) | 1940-11-12 |
Family
ID=7474837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US289790A Expired - Lifetime US2221614A (en) | 1938-08-16 | 1939-08-12 | Method of manufacturing selenium rectifiers |
Country Status (5)
Country | Link |
---|---|
US (1) | US2221614A (en) |
BE (1) | BE435957A (en) |
CH (1) | CH214717A (en) |
DE (1) | DE922896C (en) |
FR (1) | FR858998A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2607832A (en) * | 1947-07-19 | 1952-08-19 | Vickers Inc | Devices which have selenium as constituent parts thereof |
US2869057A (en) * | 1951-12-18 | 1959-01-13 | Itt | Electric current rectifier |
DE973445C (en) * | 1941-07-12 | 1960-02-18 | Int Standard Electric Corp | Process for the production of metal plates covered with selenium for rectifiers, photo elements and the like. like |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2035022A (en) * | 1931-03-28 | 1936-03-24 | Sprague Specialties Co | Electrolytic device |
GB433818A (en) * | 1933-05-31 | 1935-08-21 | Joseph Barry Brennan | Improvements in and relating to electrolytic devices |
FR774344A (en) * | 1934-03-15 | 1934-12-05 | Suddeutsche App Fabrik G M B H | Improvements to rectifiers with metal rectifier placed between two electrodes |
-
1938
- 1938-08-16 DE DES15120D patent/DE922896C/en not_active Expired
-
1939
- 1939-08-07 CH CH214717D patent/CH214717A/en unknown
- 1939-08-11 FR FR858998D patent/FR858998A/en not_active Expired
- 1939-08-12 US US289790A patent/US2221614A/en not_active Expired - Lifetime
- 1939-08-12 BE BE435957D patent/BE435957A/xx unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE973445C (en) * | 1941-07-12 | 1960-02-18 | Int Standard Electric Corp | Process for the production of metal plates covered with selenium for rectifiers, photo elements and the like. like |
US2607832A (en) * | 1947-07-19 | 1952-08-19 | Vickers Inc | Devices which have selenium as constituent parts thereof |
US2869057A (en) * | 1951-12-18 | 1959-01-13 | Itt | Electric current rectifier |
Also Published As
Publication number | Publication date |
---|---|
BE435957A (en) | 1939-09-30 |
CH214717A (en) | 1941-05-15 |
FR858998A (en) | 1940-12-07 |
DE922896C (en) | 1955-01-27 |
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