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US20090140430A1 - Copper Alloy Sputtering Target and Semiconductor Element Wiring - Google Patents

Copper Alloy Sputtering Target and Semiconductor Element Wiring Download PDF

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Publication number
US20090140430A1
US20090140430A1 US12/367,581 US36758109A US2009140430A1 US 20090140430 A1 US20090140430 A1 US 20090140430A1 US 36758109 A US36758109 A US 36758109A US 2009140430 A1 US2009140430 A1 US 2009140430A1
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US
United States
Prior art keywords
copper alloy
seed layer
semiconductor element
wiring
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US12/367,581
Inventor
Takeo Okabe
Hirohito Miyashita
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JX Nippon Mining and Metals Corp
Nippon Mining Holdings Inc
MOVE MOBILE SYSTEMS Inc
Original Assignee
Nippon Mining and Metals Co Ltd
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Priority to US12/367,581 priority Critical patent/US20090140430A1/en
Assigned to NIKKO MATERIALS CO., LTD. reassignment NIKKO MATERIALS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OKABE, TAKEO, MIYASHITA, HIROHITO
Assigned to NIPPON MINING & METALS CO., LTD. reassignment NIPPON MINING & METALS CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NIKKO MATERIALS CO., LTD.
Publication of US20090140430A1 publication Critical patent/US20090140430A1/en
Assigned to NIPPON MINING HOLDINGS, INC. reassignment NIPPON MINING HOLDINGS, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING & METALS CO., LTD.
Assigned to JX NIPPON MINING & METALS CORPORATION reassignment JX NIPPON MINING & METALS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING HOLDINGS, INC.
Assigned to MOVE MOBILE SYSTEMS, INC. reassignment MOVE MOBILE SYSTEMS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PALLAKOFF, Matthew
Priority to US15/926,022 priority patent/US10665462B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention pertains to a copper alloy sputtering target for a wiring material of a semiconductor element, in particular a copper alloy sputtering target which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating and which exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.
  • electrolytic copper having a purity of 4N (excluding gas components) is employed as the crude metal in a wet or dry high purification process to manufacture high purity copper having a purity of 5N to 6N, and this was used as the sputtering target.
  • copper wirings having a semiconductor wiring width of up to 0.18 ⁇ m there was no particular problem for copper wirings having a semiconductor wiring width of up to 0.18 ⁇ m.
  • the thickness of the seed layer would become an ultra thin film of 100 nm or less, and, when forming a seed layer with a 6N purity copper target, coagulation would occur and a favorable seed layer could not be formed.
  • the uniformity of the foundation layer is important, and, when the foundation layer becomes coagulated, it is not possible to form a uniform film upon forming a copper film via electroplating. For example, during wiring, defects such as voids, hillocks, and disconnections are formed.
  • the copper wiring material As the copper wiring material, a method has been proposed of adding certain elements to copper in order to improve the electromigration (EM) resistance, corrosion resistance, bond strength and so on (for example, c.f. Japanese Patent Laid-Open Publication No. H5-311424, Japanese Patent Laid-Open Publication No. H1-248538). Further, also proposed is a pure copper target or a target in which 0.04 to 0.15 wt % of Ti is added thereto.
  • EM electromigration
  • a wiring material for a semiconductor element in particular, a copper alloy which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating has not been obtained, and conventionally technology was not necessarily sufficient.
  • An object of the present invention is to provide a wiring material for a semiconductor element, in particular a copper alloy sputtering target which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating, and exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.
  • the present inventors discovered that the addition of an appropriate amount of metal elements will prevent the generation of defects such as voids, hillocks, and disconnections during copper electroplating, and realize a copper alloy sputtering target capable of forming a stable and uniform seed layer having a low specific resistance and favorable electromigration resistance and oxidation resistance, and a semiconductor element wiring formed with such a target.
  • the present invention provides a copper alloy sputtering target containing 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si.
  • the copper alloy sputtering target may contain one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less, or more preferably, 0.5 wtppm or less.
  • the present invention also provides a copper alloy sputtering target containing 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn.
  • the copper alloy sputtering target may contain one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less, or more preferably, 0.5 wtppm or less.
  • the above referenced copper alloy sputtering targets can have a recrystallization temperature of 365° C. or less and an oxygen content of 5 wtppm or less, or more preferably, 1 wtppm or less.
  • the copper alloy sputtering targets can also have an average crystal grain size of 0.1 to 60 ⁇ m and an average grain size variation within ⁇ 20%.
  • the copper alloy sputtering targets can have a total amount of Al and Sn contained therein of 0.5 to 4.0 wt %.
  • the present invention is also directed to semiconductor element wiring formed with the above referenced copper alloy sputtering targets.
  • the semiconductor element wiring is formed as a semiconductor wiring seed layer, and the seed layer is formed on a barrier film of Ta, Ta alloy or the nitrides thereof.
  • the copper alloy sputtering target of the present invention contains 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si, and, in particular, is capable of forming a stable and uniform seed layer without any coagulation and superior in oxidation resistance upon performing copper electroplating. Further, this is superior in sputter deposition characteristics and useful as the wiring material of a semiconductor element.
  • this alloy is able to effectively prevent coagulation upon plating. In other words, the wettability with the barrier film is improved.
  • the Al content is less than 0.5 wt %, coagulation cannot be prevented, and, if it exceeds 4.0 wt %, resistance at the seed layer will increase, and the resistance of the overall copper wiring will increase, which is not preferable. Further, during the dissolution in the copper alloy manufacturing process, since the oxygen content will increase together with the increase of Al, it is necessary to avoid such Al content from exceeding 4.0 wt %. Particularly, it is optimal that the Al content is 1 to 2 wt %.
  • Si will improve the oxidation resistance. Nevertheless, Si itself has no effect of preventing coagulation, and, since it will deteriorate the coagulation prevention effect of Al when the content exceeds 0.5 wtppm, it is necessary to keep the Si content 0.5 wtppm or less. In particular, since Si will be mixed from Al as the dissolution material, management of the Si component is important.
  • the copper alloy sputtering target of the present invention may contain one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less.
  • a preferable additive amount is in a total amount of 0.5 wtppm or less.
  • the copper alloy sputtering target of the present invention contains 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn, and, in particular, is capable of forming stable and uniform seed layer without any coagulation and superior in oxidation resistance upon performing copper electroplating. Further, this is superior in sputter deposition characteristics and useful as the wiring material of a semiconductor element.
  • this alloy is able to effectively prevent coagulation upon plating. In other words, the wettability with the barrier film is improved.
  • the Sn content is less than 0.5 wt %, coagulation cannot be prevented, and, if it exceeds 4.0 wt %, resistance at the seed layer will increase, and the resistance as the overall copper wiring will increase, which is not preferable. Further, during the dissolution in the copper alloy manufacturing process, since the deformation processing of the ingot will become difficult, it is necessary to avoid such Sn content from exceeding 4.0 wt %. Particularly, it is optimal that the Sn content is 1 to 3 wt %.
  • Mn will improve the oxidation resistance. Nevertheless, Mn itself has no effect of preventing coagulation, and, since it will deteriorate the coagulation prevention effect of Sn when the content exceeds 0.5 wtppm, it is necessary to keep the Mn content 0.5 wtppm or less. In particular, since Mn will be mixed from Sn as the dissolution material, management of the Mn component is important.
  • the copper alloy sputtering target of the present invention may contain one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less.
  • a preferable range is in a total amount of 0.5 wtppm or less.
  • the recrystallization temperature is 365° C. or less.
  • the recrystallization temperature exceeds 365° C., coagulation will occur easier since the temperature for securing the thermal stability of the plating film will become higher. In other words, there is a defect in that the interaction (wettability) with the barrier layer will deteriorate.
  • this recrystallization temperature represents the temperature located at the intermediate Hv value between the Hv of the fully annealed material and the Hv prior to annealing (after 70% cold working) upon fully annealing a sample at 800° C., subjecting this to 70% cold working, retaining this for 30 minutes at 100 to 600° C., and measuring the Vickers hardness (MicroVickers, load of 100 g).
  • oxygen is 5 wtppm or less, more desirably 1 wtppm or less.
  • oxygen will work to miniaturize the target texture, it will also form inclusions in the grain boundary and cause the generation of particles.
  • the average crystal grain size is 0.1 to 60 ⁇ m, and the variation of the average grain size is within ⁇ 20%.
  • uniformity of the film (evenness of the film thickness) can be improved throughout the sputtering target life, and the uniformity of the film composition can be improved.
  • the wafer size exceeds 300 mm, the film uniformity will become more important.
  • Al and Sn can be contained in a total amount of 0.5 to 4.0 wt %.
  • the additive amount of the respective components is the same as the foregoing example.
  • the copper alloy sputtering target of the present invention is useful in the manufacture of semiconductor element wiring, in particular to the formation of a seed layer for semiconductor wiring, and also optimal for the formation of a seed layer on the barrier film of Ta, Ta alloy or nitrides thereof.
  • the copper alloy sputtering target of the present invention may be manufactured with the following process.
  • high purity copper having a purity of 6N or higher, high purity Al and Sn having the same level of purity, and other additive elements are adjusted, and dissolved in a high vacuum atmosphere with the cold crucible dissolution method employing a water-cooled copper crucible to obtain a high purity alloy.
  • the amount of additive elements must be managed sufficiently. Upon dissolution, in order to reduce the contamination caused by the contact with molten metal, it is effective to establish a copper plate having a purity of 6N at the bottom of the crucible.
  • the alloyed molten metal is promptly cast in a water-cooled copper mold in a high vacuum atmosphere to obtain an ingot.
  • a texture of this ingot for instance, by controlling the crystal grain size, sputtering characteristics can be improved.
  • the surface layer is removed from the manufactured ingot, and the ingot is subject to hot forging, hot rolling, cold rolling and heat treatment so as to form a target material.
  • This target material is further subject to machine processing to form a prescribed shape, and bonded with a backing plate to form a target product.
  • High purity copper having a purity of 6N or higher, high purity Al, Sn, Mn having the same level of purity, and other additive elements were adjusted, and dissolved in a high vacuum atmosphere with the cold crucible dissolution method employing a water-cooled copper crucible to obtain a high purity alloy.
  • the adjusted alloy compositions of Examples 1-10 are shown in Table 1 regarding Cu—Al alloys, and in Table 2 regarding Cu—Sn alloys.
  • Example 5 and Example 10 are cases where alloy elements Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As were not added. Therefore, the amounts shown in Table 1 and Table 2 are contained in the impurity level.
  • a copper plate having a purity of 6N was established at the bottom of the crucible.
  • the alloyed molten metal was cast in a water-cooled copper mold in a high vacuum atmosphere to obtain an ingot.
  • the surface layer of the manufactured ingot was removed to make the ingot ⁇ 160 ⁇ 60 t, and thereafter made to ⁇ 200 by hot forging at 400° C. Thereafter, this was hot rolled at 400° C. and rolled until ⁇ 270 ⁇ 20 t, and further cold rolled until ⁇ 360 ⁇ 10 t.
  • the overall target was rapidly cooled to form a target material. This was subject to machine processing to obtain a target having a diameter of 13 inches and a thickness of 7 mm, and further diffusion bonded with an Al alloy backing plate to obtain a sputtering target assembly.
  • the target obtained pursuant to the above was used to form a sputtered film having a thickness of 50 nm on an 8-inch TaN/Ta/Si substrate.
  • the degree of coagulation of this sputtered film was observed with a high resolution SEM.
  • the uniformity of the film sputtered and deposited to a thickness of roughly 500 nm on the Si substrate was measured.
  • the oxygen content is low, and the recrystallization temperature is also low. Further, the average crystal grain size is 60 ⁇ m or less, and the variation of the average grain size is within ⁇ 20%.
  • Comparative Example 4 Al is less than 0.5 wt %, and the coagulation prevention effect is low.
  • Comparative Example 4 Al exceeds 4.0 wt %, and, Si also increased, the recrystallization temperature is high, and the coagulation prevention effect is low. Further, as shown in Comparative Example 5, when Si increases (exceeds 0.5 ppm), the coagulation prevention effect will deteriorate.
  • Comparative Example 7 the oxygen content is high, and the coagulation prevention effect is low.
  • Comparative Example 8 the oxygen content is high and the recrystallization temperature is also high, but the coagulation prevention effect became worse.
  • Comparative Example 9 the variation of the grain size is significant, and the uniformity of the film thickness is inferior.
  • Comparative Example 10 the grain size is large, and the uniformity of the film thickness is similarly inferior.
  • Comparative Example 11 the Sn content is less than 0.5 wt %, and the coagulation prevention effect is low. Contrarily, in Comparative Example 12, the Sn content exceeds 4.0 wt %, and, Mn also increased, the recrystallization temperature is also high, and the coagulation prevention effect is inferior. As shown in Comparative Example 13, when the Mn content increases, the coagulation prevention effect will deteriorate.
  • Comparative Example 15 the variation of the grain size is significant, and the uniformity of the film thickness is inferior.
  • Comparative Example 16 the grain size is large, and the uniformity of the film thickness is similarly inferior.
  • the target obtained pursuant to the above was used to form a sputtered film having a thickness of 50 nm on an 8-inch TaN/Ta/Si substrate.
  • the degree of coagulation of this sputtered film was observed with a high resolution SEM.
  • the uniformity of the film sputtered and deposited to a thickness of roughly 500 nm on the Si substrate was measured.
  • the present invention yields a superior effect in that it is able to provide a copper alloy sputtering target which allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.

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Abstract

A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is a divisional of co-pending U.S. application Ser. No. 10/530,438, which is the National Stage of International Application No. PCT/JP03/13251, filed Oct. 16, 2003, which claims the benefit under 35 USC §119 of Japanese Application No. 2002-337341, filed Nov. 21, 2002.
    • BACKGROUND OF THE INVENTION
  • The present invention pertains to a copper alloy sputtering target for a wiring material of a semiconductor element, in particular a copper alloy sputtering target which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating and which exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.
  • Conventionally, Al (specific resistance of roughly 3.1 μΩ·cm) has been used as the wiring material of a semiconductor element, but copper wiring with lower resistance (specific resistance of roughly 1.7 μΩ·cm) has been put into practical application pursuant to the miniaturization of wiring.
  • With the current formation process of copper wiring, often times, after forming a diffusion barrier layer of Ta/TaN or the like in a contact hole or the concave portion of a wiring groove, copper is electroplated thereto. In order to perform this electroplating, as the foundation layer (seed layer), generally, copper or copper alloy is sputtered and deposited thereto.
  • Ordinarily, electrolytic copper having a purity of 4N (excluding gas components) is employed as the crude metal in a wet or dry high purification process to manufacture high purity copper having a purity of 5N to 6N, and this was used as the sputtering target. Here, there was no particular problem for copper wirings having a semiconductor wiring width of up to 0.18 μm.
  • Nevertheless, there were problems in that with ultra fine wiring where the copper wiring width is 0.13 μm or less; for instance, 90 nm or 65 nm, and the aspect ratio exceeds 8, the thickness of the seed layer would become an ultra thin film of 100 nm or less, and, when forming a seed layer with a 6N purity copper target, coagulation would occur and a favorable seed layer could not be formed.
  • As described above, the uniformity of the foundation layer is important, and, when the foundation layer becomes coagulated, it is not possible to form a uniform film upon forming a copper film via electroplating. For example, during wiring, defects such as voids, hillocks, and disconnections are formed.
  • Even if defects such as voids described above are not formed, since an uneven electrodeposited texture of copper will be formed in this portion, there is a problem in that the electromigration resistance will deteriorate.
  • In order to overcome this problem, it is important to form a stable and uniform seed layer upon performing copper electroplating, and a sputtering target optimal in forming a seed layer having superior sputter deposition characteristics is required.
  • Heretofore, as the copper wiring material, a method has been proposed of adding certain elements to copper in order to improve the electromigration (EM) resistance, corrosion resistance, bond strength and so on (for example, c.f. Japanese Patent Laid-Open Publication No. H5-311424, Japanese Patent Laid-Open Publication No. H1-248538). Further, also proposed is a pure copper target or a target in which 0.04 to 0.15 wt % of Ti is added thereto.
  • And, in the foregoing proposals, rapid cooling for the uniform dispersion of the added elements, or continuous casting for preventing the segregation of added elements in ingots, cracks during casting, and coarsening of ingots are being proposed.
  • Nevertheless, although high purity copper or copper alloy which add minute amounts of metal to the high purity copper have an advantage in that the specific resistance is low, these cannot necessarily be considered favorable materials since there is the problem of electromigration and the problem of oxidation resistance during the process.
  • In particular, since the aspect ratio is becoming even higher in recent years (aspect ratio of 4 or higher), sufficient electromigration resistance and oxidation resistance are being sought.
  • In light of the above, as a wiring material, a proposal has been made for adding Al or Sn (or other various elements such as Ti or Zr) to copper to obtain a copper alloy to be used as the target (for example, c.f. Japanese Patent Laid-Open Publication No. H10-060633). Nevertheless, this is for improving the EM resistance, SM resistance or oxidation resistance without hindering the low resistance characteristics of copper, and could not be used for forming a seed layer in an ultra fine copper wiring process pursuant to the copper electroplating described above (for example, c.f. Japanese Patent Laid-Open Publication No. H6-177117).
  • Further, there is also a proposal stating that 0.5 wt % of Sn is effective in reducing the grain boundary diffusion and improving the EM characteristics of Cu (for example, c.f. [Electromigration and diffusion in pure Cu and Cu(Sn) alloy, Mat. Res. Soc. Symp. Proc. Vol. 427, 1996], Materials Research Society, written by C. H. Hu, K. L. Lee, D. GupTa, and P. Blauner (IBM)). Nevertheless, this does not resolve the coagulation problem (interaction) with the seed layer on the barrier layer formed with the likes of Ta or TaN.
  • Accordingly, with conventional technology, a wiring material for a semiconductor element, in particular, a copper alloy which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating has not been obtained, and conventionally technology was not necessarily sufficient.
    • SUMMARY OF THE INVENTION
  • An object of the present invention is to provide a wiring material for a semiconductor element, in particular a copper alloy sputtering target which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating, and exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.
  • In order to achieve the foregoing object, as a result of intense study, the present inventors discovered that the addition of an appropriate amount of metal elements will prevent the generation of defects such as voids, hillocks, and disconnections during copper electroplating, and realize a copper alloy sputtering target capable of forming a stable and uniform seed layer having a low specific resistance and favorable electromigration resistance and oxidation resistance, and a semiconductor element wiring formed with such a target.
  • Based on the foregoing discovery, the present invention provides a copper alloy sputtering target containing 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si. The copper alloy sputtering target may contain one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less, or more preferably, 0.5 wtppm or less.
  • The present invention also provides a copper alloy sputtering target containing 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn. The copper alloy sputtering target may contain one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less, or more preferably, 0.5 wtppm or less.
  • The above referenced copper alloy sputtering targets can have a recrystallization temperature of 365° C. or less and an oxygen content of 5 wtppm or less, or more preferably, 1 wtppm or less. The copper alloy sputtering targets can also have an average crystal grain size of 0.1 to 60 μm and an average grain size variation within ±20%. In addition, the copper alloy sputtering targets can have a total amount of Al and Sn contained therein of 0.5 to 4.0 wt %.
  • The present invention is also directed to semiconductor element wiring formed with the above referenced copper alloy sputtering targets. Preferably, the semiconductor element wiring is formed as a semiconductor wiring seed layer, and the seed layer is formed on a barrier film of Ta, Ta alloy or the nitrides thereof.
    • DETAILED DESCRIPTION OF THE INVENTION
  • The copper alloy sputtering target of the present invention contains 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si, and, in particular, is capable of forming a stable and uniform seed layer without any coagulation and superior in oxidation resistance upon performing copper electroplating. Further, this is superior in sputter deposition characteristics and useful as the wiring material of a semiconductor element.
  • As a result of containing 0.5 to 4.0 wt % of Al, this alloy is able to effectively prevent coagulation upon plating. In other words, the wettability with the barrier film is improved.
  • If the Al content is less than 0.5 wt %, coagulation cannot be prevented, and, if it exceeds 4.0 wt %, resistance at the seed layer will increase, and the resistance of the overall copper wiring will increase, which is not preferable. Further, during the dissolution in the copper alloy manufacturing process, since the oxygen content will increase together with the increase of Al, it is necessary to avoid such Al content from exceeding 4.0 wt %. Particularly, it is optimal that the Al content is 1 to 2 wt %.
  • The inclusion of Si will improve the oxidation resistance. Nevertheless, Si itself has no effect of preventing coagulation, and, since it will deteriorate the coagulation prevention effect of Al when the content exceeds 0.5 wtppm, it is necessary to keep the Si content 0.5 wtppm or less. In particular, since Si will be mixed from Al as the dissolution material, management of the Si component is important.
  • The copper alloy sputtering target of the present invention may contain one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less.
  • These constituent elements will improve the oxidation resistance. Nevertheless, as with Si, if the content exceeds 1.0 wtppm, they will significantly deteriorate the coagulation prevention effect of Al; that is, since they will significantly deteriorate the wettability with the barrier film, it is necessary to keep the content 1.0 wtppm or less when adding such constituent elements. In particular, a preferable additive amount is in a total amount of 0.5 wtppm or less.
  • Moreover, the copper alloy sputtering target of the present invention contains 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn, and, in particular, is capable of forming stable and uniform seed layer without any coagulation and superior in oxidation resistance upon performing copper electroplating. Further, this is superior in sputter deposition characteristics and useful as the wiring material of a semiconductor element.
  • As a result of containing 0.5 to 4.0 wt % of Sn, this alloy is able to effectively prevent coagulation upon plating. In other words, the wettability with the barrier film is improved.
  • If the Sn content is less than 0.5 wt %, coagulation cannot be prevented, and, if it exceeds 4.0 wt %, resistance at the seed layer will increase, and the resistance as the overall copper wiring will increase, which is not preferable. Further, during the dissolution in the copper alloy manufacturing process, since the deformation processing of the ingot will become difficult, it is necessary to avoid such Sn content from exceeding 4.0 wt %. Particularly, it is optimal that the Sn content is 1 to 3 wt %.
  • The inclusion of Mn will improve the oxidation resistance. Nevertheless, Mn itself has no effect of preventing coagulation, and, since it will deteriorate the coagulation prevention effect of Sn when the content exceeds 0.5 wtppm, it is necessary to keep the Mn content 0.5 wtppm or less. In particular, since Mn will be mixed from Sn as the dissolution material, management of the Mn component is important.
  • The copper alloy sputtering target of the present invention may contain one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less.
  • These constituent elements will improve the oxidation resistance. Nevertheless, as with Mn, if the content exceeds 1.0 wtppm, since they will significantly deteriorate the coagulation prevention effect of Sn; that is, since they will significantly deteriorate the wettability with the barrier film, it is necessary to keep the content 1.0 wtppm or less when adding such constituent elements. In particular, a preferable range is in a total amount of 0.5 wtppm or less.
  • With the copper alloy sputtering target of the present invention, it is desirable that the recrystallization temperature is 365° C. or less. When the recrystallization temperature exceeds 365° C., coagulation will occur easier since the temperature for securing the thermal stability of the plating film will become higher. In other words, there is a defect in that the interaction (wettability) with the barrier layer will deteriorate.
  • Incidentally, this recrystallization temperature represents the temperature located at the intermediate Hv value between the Hv of the fully annealed material and the Hv prior to annealing (after 70% cold working) upon fully annealing a sample at 800° C., subjecting this to 70% cold working, retaining this for 30 minutes at 100 to 600° C., and measuring the Vickers hardness (MicroVickers, load of 100 g).
  • Further, with the copper alloy sputtering target of the present invention, it is desirable that oxygen is 5 wtppm or less, more desirably 1 wtppm or less. Although oxygen will work to miniaturize the target texture, it will also form inclusions in the grain boundary and cause the generation of particles. In particular, since there is a problem in that oxygen will generate emergent particles during the sputtering life, it is desirable to reduce the oxygen content as much as possible.
  • Moreover, if copper oxide (Cu2O) is formed on the seed layer, there is a problem in that such portion may dissolve upon electroplating. When the surface of the seed layer is affected by the plating bath as described above, there is a problem in that the electric field will fluctuate at a micro level, and a uniform plated film cannot be formed. Therefore, it is necessary to limit the oxygen content within the foregoing range.
  • Further, with the copper alloy sputtering target of the present invention, it is desirable that the average crystal grain size is 0.1 to 60 μm, and the variation of the average grain size is within ±20%.
  • As described above, by controlling the target texture, uniformity of the film (evenness of the film thickness) can be improved throughout the sputtering target life, and the uniformity of the film composition can be improved. In particular, when the wafer size exceeds 300 mm, the film uniformity will become more important.
  • Further, with the copper alloy sputtering target of the present invention, Al and Sn can be contained in a total amount of 0.5 to 4.0 wt %. The additive amount of the respective components is the same as the foregoing example.
  • Moreover, the copper alloy sputtering target of the present invention is useful in the manufacture of semiconductor element wiring, in particular to the formation of a seed layer for semiconductor wiring, and also optimal for the formation of a seed layer on the barrier film of Ta, Ta alloy or nitrides thereof.
  • The copper alloy sputtering target of the present invention, for example, may be manufactured with the following process.
  • Foremost, high purity copper having a purity of 6N or higher, high purity Al and Sn having the same level of purity, and other additive elements are adjusted, and dissolved in a high vacuum atmosphere with the cold crucible dissolution method employing a water-cooled copper crucible to obtain a high purity alloy. The amount of additive elements must be managed sufficiently. Upon dissolution, in order to reduce the contamination caused by the contact with molten metal, it is effective to establish a copper plate having a purity of 6N at the bottom of the crucible.
  • The alloyed molten metal is promptly cast in a water-cooled copper mold in a high vacuum atmosphere to obtain an ingot. As a result of controlling the texture of this ingot; for instance, by controlling the crystal grain size, sputtering characteristics can be improved.
  • The surface layer is removed from the manufactured ingot, and the ingot is subject to hot forging, hot rolling, cold rolling and heat treatment so as to form a target material. This target material is further subject to machine processing to form a prescribed shape, and bonded with a backing plate to form a target product.
    • EXAMPLES AND COMPARATIVE EXAMPLES
  • The present invention is now explained in detail with reference to the Examples and Comparative Examples. These Examples are merely illustrative, and the present invention shall in no way be limited thereby. In other words, the present invention shall only be limited by the scope of claim for a patent, and shall include the various modifications other than the Examples of this invention.
    • Examples 1-10
  • High purity copper having a purity of 6N or higher, high purity Al, Sn, Mn having the same level of purity, and other additive elements were adjusted, and dissolved in a high vacuum atmosphere with the cold crucible dissolution method employing a water-cooled copper crucible to obtain a high purity alloy. The adjusted alloy compositions of Examples 1-10 are shown in Table 1 regarding Cu—Al alloys, and in Table 2 regarding Cu—Sn alloys.
  • Incidentally, Example 5 and Example 10 are cases where alloy elements Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As were not added. Therefore, the amounts shown in Table 1 and Table 2 are contained in the impurity level.
  • Upon dissolution, in order to reduce the contamination caused by the contact with molten metal, a copper plate having a purity of 6N was established at the bottom of the crucible. The alloyed molten metal was cast in a water-cooled copper mold in a high vacuum atmosphere to obtain an ingot.
  • Next, the surface layer of the manufactured ingot was removed to make the ingot φ160×60 t, and thereafter made to φ200 by hot forging at 400° C. Thereafter, this was hot rolled at 400° C. and rolled until φ270×20 t, and further cold rolled until φ360×10 t.
  • Next, after performing heat treatment thereto at 500° C. for 1 hour, the overall target was rapidly cooled to form a target material. This was subject to machine processing to obtain a target having a diameter of 13 inches and a thickness of 7 mm, and further diffusion bonded with an Al alloy backing plate to obtain a sputtering target assembly.
  • Measurement of the average grain size was conducted with the method of section based on JIS H0501, wherein 17 points were given concentrically in the planar direction, and 3 points on the front face, center and back face in the plate thickness direction to measure the target with a total of 17×3=51 points.
  • The target obtained pursuant to the above was used to form a sputtered film having a thickness of 50 nm on an 8-inch TaN/Ta/Si substrate. The degree of coagulation of this sputtered film was observed with a high resolution SEM. Moreover, the uniformity of the film sputtered and deposited to a thickness of roughly 500 nm on the Si substrate was measured.
  • Regarding the foregoing results, in addition to the component and composition of the target, the oxygen content, recrystallization temperature, average crystal grain size, variation of sputtered film, coagulation property, and uniformity of film thickness (3σ(%)) are shown in Table 1 and Table 2.
  • In the present invention, the oxygen content is low, and the recrystallization temperature is also low. Further, the average crystal grain size is 60 μm or less, and the variation of the average grain size is within ±20%.
  • And, coagulation is suppressed, and coagulation did not occur at all or the coagulation property was extremely low. Further, it is evident that obtained is a copper alloy sputtering target superior in the film thickness uniformity, and capable of forming a stable and uniform seed layer. As a result, this target can be used to obtain a superior semiconductor element wiring.
  • TABLE 1
    Average Uniformity
    Recrystallization Grain of Film
    *Total O Temperature Size Coagulation Thickness
    Cu—Al alloys Composition Si (ppm) Mn (ppm) (ppm) (ppm) (° C.) (μm) Variation (%) Property (3σ (%))
    Example 1 0.64 wt % Al 0.19 — 0.44 <1 285 41 13 ◯ 9
    Example 2 1.0 wt % Al 0.21 — 0.32 <1 300 39 9 ⊚ 16
    Example 3 2.0 wt % Al 0.33 — 0.36 5 335 31 11 ⊚ 9
    Example 4 4.0 wt % Al 0.41 — 0.24 5 355 19 7 ◯ 9
    Example 5 2.0 wt % Al — — <0.01 <1 330 40 13 ⊚ 18
    Comparative 0.106 wt % Al 0.09 — 0.16 <1 260 85 16 X 20
    Example 1
    Comparative 0.21 wt % Al 0.11 — 0.32 <1 285 46 13 X 12
    Example 2
    Comparative 0.43 wt % Al 0.19 — 0.32 <1 280 61 16 Δ 18
    Example 3
    Comparative 9.6 wt % Al 1.82 — 0.86 5 375 18 5 X 7
    Example 4
    Comparative 1.0 wt % Al 0.84 — 0.35 <1 290 47 14 Δ 14
    Example 5
    Comparative 1.0 wt % Al 0.78 — 0.81 <1 290 52 16 Δ 15
    Example 6
    Comparative 1.0 wt % Al 0.19 — 0.41 15 340 32 8 Δ 14
    Example 7
    Comparative 1.0 wt % Al 0.23 — 0.36 25 380 26 8 X 11
    Example 8
    Comparative 1.0 wt % Al 0.17 — 0.32 <1 300 72 110 ⊚ 27
    Example 9
    Comparative 1.0 wt % Al 0.17 — 0.32 <1 300 256 60 ⊚ 25
    Example 10
  • TABLE 2
    Average Uniformity
    Recrystallization Grain of Film
    Cu—Sn Si Temperature Size Variation Coagulation Thickness
    alloys Composition (ppm) Mn (ppm) *Total (ppm) O (ppm) (° C.) (μm) (%) Property (3σ (%))
    Example 6 2.7 wt % Sn — 0.15 0.22 <1 335 39 13 ⊚ 8
    Example 7 0.93 wt % Sn — 0.20 0.28 <1 325 42 15 ◯ 13
    Example 8 3.67 wt % Sn — 0.20 0.35 <1 365 34 16 ⊚ 14
    Example 9 4.0 wt % Sn — 0.35 0.33 5 365 29 9 ⊚ 16
    Example 10 3.67 wt % Sn — — <0.01 <1 365 52 18 ⊚ 18
    Comparative 0.1 wt % Sn — 0.10 0.16 <1 320 61 18 X 11
    Example 11
    Comparative 10 wt % Sn — 0.85 0.36 10 390 26 15 X 9
    Example 12
    Comparative 2.7 wt % Sn — 1.23 0.22 <1 335 42 16 ◯ 11
    Example 13
    Comparative 2.7 wt % Sn — 0.82 0.81 <1 335 46 13 Δ 7
    Example 14
    Comparative 2.7 wt % Sn — 0.15 0.26 <1 335 120 163 ⊚ 36
    Example 15
    Comparative 2.7 wt % Sn — 0.10 0.25 <1 335 311 82 ⊚ 24
    Example 16
    • Comparative Examples 1-16
  • Under the same manufacturing conditions as with Examples 1-10, materials of similar alloy components but outside the scope of the present invention were used to manufacture a copper alloy target in a case of changing the alloy component, and a case of changing the grain size and variation thereof, respectively.
  • These conditions are similarly shown in Table 1 regarding Cu—Al alloys and shown in Table 2 regarding Cu—Sn alloys. The target obtained pursuant to the above was used to form a sputtered film having a thickness of 50 nm on an 8-inch TaN/Ta/Si substrate.
  • The degree of coagulation of this sputtered film was observed with a high resolution SEM. Moreover, the uniformity of the film sputtered and deposited to a thickness of roughly 500 nm on the Si substrate was measured.
  • Regarding the foregoing results of Comparative Examples 1-16, in addition to the component and composition of the target, the oxygen content, recrystallization temperature, average crystal grain size, variation of sputtered film, coagulation property, and uniformity of film thickness (3σ(%)) are shown in Table 1 and Table 2.
  • In each of the Comparative Examples 1-3, Al is less than 0.5 wt %, and the coagulation prevention effect is low. In Comparative Example 4, Al exceeds 4.0 wt %, and, Si also increased, the recrystallization temperature is high, and the coagulation prevention effect is low. Further, as shown in Comparative Example 5, when Si increases (exceeds 0.5 ppm), the coagulation prevention effect will deteriorate.
  • In Comparative Example 6, since Si also increased (exceeded 0.5 ppm), the coagulation prevention effect deteriorated.
  • In Comparative Example 7, the oxygen content is high, and the coagulation prevention effect is low. In Comparative Example 8, the oxygen content is high and the recrystallization temperature is also high, but the coagulation prevention effect became worse.
  • In Comparative Example 9, the variation of the grain size is significant, and the uniformity of the film thickness is inferior. In Comparative Example 10, the grain size is large, and the uniformity of the film thickness is similarly inferior.
  • In Comparative Example 11, the Sn content is less than 0.5 wt %, and the coagulation prevention effect is low. Contrarily, in Comparative Example 12, the Sn content exceeds 4.0 wt %, and, Mn also increased, the recrystallization temperature is also high, and the coagulation prevention effect is inferior. As shown in Comparative Example 13, when the Mn content increases, the coagulation prevention effect will deteriorate.
  • In Comparative Example 14, since the Mn content is similarly high, the coagulation prevention effect has deteriorated.
  • Further, in Comparative Example 15, the variation of the grain size is significant, and the uniformity of the film thickness is inferior. In Comparative Example 16, the grain size is large, and the uniformity of the film thickness is similarly inferior.
    • Comparative Examples 17-25
  • Under the same manufacturing conditions as with Examples 1-10, a copper alloy target was manufactured with pure copper or a copper alloy material other than the present invention (using a conventional copper material), respectively. The conditions are shown in Table 3.
  • The target obtained pursuant to the above was used to form a sputtered film having a thickness of 50 nm on an 8-inch TaN/Ta/Si substrate. The degree of coagulation of this sputtered film was observed with a high resolution SEM. Moreover, the uniformity of the film sputtered and deposited to a thickness of roughly 500 nm on the Si substrate was measured.
  • Regarding the foregoing results of Comparative Examples 17-25, in addition to the component and composition of the target, the oxygen content, recrystallization temperature, average crystal grain size, variation of sputtered film, coagulation property, and uniformity of film thickness (3σ(%)) are shown in Table 3. As evident from Table 3, conventional pure copper or copper alloy resulted in an inferior coagulation prevention effect.
  • TABLE 3
    Pure Copper, Re- Average Uniformity
    Other crystallization Grain of Film
    Copper Si Mn *Total O Temperature Size Variation Coagulation Thickness
    alloy Composition (ppm) (ppm) (ppm) (ppm) (° C.) (μm) (%) Property (3σ (%))
    Comparative 5N Pure 1.6  — 3.23 10 145 42 16 X 13
    Example 17 Copper
    Comparative 6N Pure 0.06 — 0.33 <1 145 48 18 X 14
    Example 18 Copper
    Comparative 7N Pure 0.04 — <0.1 <1 140 85 35 Δ 21
    Example 19 Copper
    Comparative 8N Pure — — <0.01 <1 140 112 40 Δ 22
    Example 20 Copper
    Comparative 1.0 wt % Ti 0.12 — 0.18 <1 495 19 9 X 13
    Example 21
    Comparative 1.0 wt % Mg 0.18 — 0.56 <1 300 31 15 Δ 15
    Example 22
    Comparative 1.0 wt % Si — — 0.29 <1 310 26 16 X 12
    Example 23
    Comparative 1.0 wt % Zr 0.13 — 0.18 <1 550 35 19 X 16
    Example 24
    Comparative 1.0 wt % Ni 0.16 — 0.23 <1 250 29 14 Δ 11
    Example 25
    Note:
    —: below detection limit
    *Sb, Zr, Ti, Cr, Ag, Au, Cd, In, As
    Note:
    Coagulation Property: not coagulated (⊚) → Strongly Coagulated (X)
  • The present invention yields a superior effect in that it is able to provide a copper alloy sputtering target which allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.

Claims (19)

1. Semiconductor element wiring prepared by a process comprising the step of forming the semiconductor element wiring from a sputtering target made of a copper alloy containing 0.5 to 4.0 wt % of Al or Sn and 0.5 wtppm or less of Si or Mn and having an average crystal grain size of 0.1 to 60 μm and an average grain size variation of within ±20%.
2. Semiconductor element wiring according to claim 1, wherein said semiconductor element wiring is a semiconductor wiring seed layer.
3. Semiconductor element wiring according to claim 2, wherein said semiconductor element wiring includes a barrier film of Ta, Ta alloy, or a nitride thereof on which the seed layer is formed.
4. Semiconductor element wiring according to claim 3, wherein said semiconductor wiring seed layer is made of said copper alloy and contains 0.5 to 4.0 wt % of Al and an amount of Si to improve oxidation resistance.
5. Semiconductor element wiring according to claim 3, wherein said semiconductor wiring seed layer is made of said copper alloy and contains 0.5 to 4.0 wt % of Sn and an amount of Mn to improve oxidation resistance.
6. Semiconductor element wiring according to claim 3, wherein said semiconductor wiring seed layer is made of said copper alloy and contains Al and Sn, and wherein a total amount of Al and Sn contained in said copper alloy is 0.5 to 4.0 wt %.
7. Semiconductor element wiring according to claim 3, wherein said semiconductor wiring seed layer contains one or more elements selected from the group consisting of Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As.
8. A semiconductor element, comprising:
a substrate providing a wiring groove;
a diffusion barrier layer coating said wiring groove;
a seed layer made of copper alloy deposited via sputtering deposition on said diffusion barrier layer, said seed layer being made of a copper alloy containing 0.5 to 4.0 wt % of Al or Sn and an amount of Si or Mn to improve oxidation resistance; and
a layer of copper electrodeposited on said seed layer to provide wiring.
9. A semiconductor element according to claim 8, wherein said diffusion barrier layer is a film of Ta, a Ta alloy, or a nitride thereof.
10. A semiconductor element according to claim 9, wherein said copper alloy seed layer contains 0.5 to 4.0 wt % of Al and an amount of Si to improve oxidation resistance.
11. A semiconductor element according to claim 9, wherein said copper alloy seed layer contains 0.5 to 4.0 wt % of Sn and an amount of Mn to improve oxidation resistance.
12. A semiconductor element according to claim 9, wherein said copper alloy seed layer contains both Al and Sn, and wherein a total amount of Al and Sn contained in said copper alloy is 0.5 to 4.0 wt %.
13. A semiconductor element according to claim 9, wherein said copper alloy seed layer contains one or more elements selected from the group consisting of Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As.
14. A method of making semiconductor element wiring, comprising the steps of:
forming a copper alloy seed layer via sputtering deposition on a diffusion barrier layer within a wiring groove on a substrate, the sputtering deposition of the seed layer being performed with a sputtering target made of a copper alloy containing 0.5 to 4.0 wt % of Al or Sn and 0.5 wtppm or less of Si or Mn and having an average crystal grain size of 0.1 to 60 cm and an average grain size variation of within ±20%; and
electroplating copper on the seed layer to form copper wiring.
15. A method according to claim 14, wherein said diffusion barrier layer is a film of Ta, a Ta alloy, or a nitride thereof.
16. A method according to claim 15, wherein said copper alloy seed layer contains 0.5 to 4.0 wt % of Al and an amount of Si to improve oxidation resistance.
17. A method according to claim 15, wherein said copper alloy seed layer contains 0.5 to 4.0 wt % of Sn and an amount of Mn to improve oxidation resistance.
18. A method according to claim 15, wherein said copper alloy seed layer contains both Al and Sn, and wherein a total amount of Al and Sn contained in said copper alloy is 0.5 to 4.0 wt %.
19. A method according to claim 15, wherein said copper alloy seed layer contains one or more elements selected from the group consisting of Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As.
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US20060088436A1 (en) * 2003-03-17 2006-04-27 Takeo Okabe Copper alloy sputtering target process for producing the same and semiconductor element wiring
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JP4377788B2 (en) * 2004-09-27 2009-12-02 株式会社神戸製鋼所 Cu alloy for semiconductor wiring, manufacturing method of Cu alloy wiring, semiconductor device having Cu alloy wiring obtained by the manufacturing method, and sputtering target for forming Cu alloy wiring of semiconductor
JP3816091B1 (en) * 2005-03-02 2006-08-30 シャープ株式会社 Semiconductor device and manufacturing method thereof
WO2006134724A1 (en) * 2005-06-15 2006-12-21 Nippon Mining & Metals Co., Ltd. Ultrahigh-purity copper and process for producing the same, and bonding wire comprising ultrahigh-purity copper
US20090208762A1 (en) * 2005-06-23 2009-08-20 Nippon Mining & Metals Co., Ltd. Copper Foil for Printed Wiring Board
US8188599B2 (en) * 2006-02-28 2012-05-29 Advanced Interconnect Materials, Llc Semiconductor device, its manufacturing method, and sputtering target material for use in the method
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US7749361B2 (en) * 2006-06-02 2010-07-06 Applied Materials, Inc. Multi-component doping of copper seed layer
JP2010502841A (en) * 2006-09-08 2010-01-28 トーソー エスエムディー，インク． Copper sputtering target having very small crystal grain size and high electromigration resistance and method for producing the same
US8702919B2 (en) 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
CN102016088B (en) 2008-09-30 2014-07-30 Jx日矿日石金属株式会社 High-purity copper and process for electrolytically producing high-purity copper
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JP6727749B2 (en) 2013-07-11 2020-07-22 三菱マテリアル株式会社 Copper material for high purity copper sputtering target and high purity copper sputtering target
US9761420B2 (en) 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
JP6274525B2 (en) * 2014-08-04 2018-02-07 三菱マテリアル株式会社 CuSn sputtering target and manufacturing method thereof
JP6398594B2 (en) * 2014-10-20 2018-10-03 三菱マテリアル株式会社 Sputtering target
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US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
JP2019108571A (en) * 2017-12-15 2019-07-04 三菱マテリアル株式会社 CuNi alloy sputtering target and CuNi alloy powder
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
CN114058897B (en) * 2021-11-25 2022-05-17 江苏科技大学 Copper alloy film, protective layer based on copper alloy film after service and preparation method
JP7194857B1 (en) * 2022-07-14 2022-12-22 Ｊｘ金属株式会社 Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic equipment
JP7164752B1 (en) * 2022-07-14 2022-11-01 Ｊｘ金属株式会社 Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic equipment
TWI842169B (en) * 2022-10-31 2024-05-11 光洋應用材料科技股份有限公司 Passivation layer for forming semiconductor bonding structure, sputtering target making the same, semiconductor bonding structure and semiconductor bonding process

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3428442A (en) * 1966-09-22 1969-02-18 Eutectic Welding Alloys Coated spray-weld alloy powders
US3760146A (en) * 1971-10-14 1973-09-18 Chemetron Corp Phosphor bronze arc welding electrode for alternating current
US4224087A (en) * 1978-09-14 1980-09-23 National Research Institute For Metals Method for producing Nb3 Sn superconductor
US4822560A (en) * 1985-10-10 1989-04-18 The Furukawa Electric Co., Ltd. Copper alloy and method of manufacturing the same
JPH01123040A (en) * 1987-11-05 1989-05-16 Furukawa Electric Co Ltd:The Bus bar for electric connecting box
US5023698A (en) * 1988-03-30 1991-06-11 Hitachi, Ltd. Semiconductor device
US5077005A (en) * 1989-03-06 1991-12-31 Nippon Mining Co., Ltd. High-conductivity copper alloys with excellent workability and heat resistance
US5853505A (en) * 1997-04-18 1998-12-29 Olin Corporation Iron modified tin brass
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6143427A (en) * 1995-07-12 2000-11-07 Federal-Mogul World Wide, Inc. Laminated material
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US20020024142A1 (en) * 2000-08-24 2002-02-28 Mitsuru Sekiguchi Semiconductor device and manufacturing method of the same
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
US6451135B1 (en) * 1997-06-02 2002-09-17 Japan Energy Corporation High-purity copper sputtering targets and thin films
US6482302B1 (en) * 2000-10-13 2002-11-19 Honeywell International Inc. Container-shaped physical vapor deposition targets
US6758920B2 (en) * 1999-11-24 2004-07-06 Honeywell International Inc. Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
US20050121320A1 (en) * 2002-01-30 2005-06-09 Takeo Okabe Copper alloy sputtering target and method for manufacturing the target
US20060088436A1 (en) * 2003-03-17 2006-04-27 Takeo Okabe Copper alloy sputtering target process for producing the same and semiconductor element wiring
US20070051624A1 (en) * 2003-12-25 2007-03-08 Nikko Materials Co., Ltd. Copper or copper alloy target/copper alloy backing plate assembly
US20070209547A1 (en) * 2004-08-10 2007-09-13 Nippon Mining & Metals Co., Ltd. Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film
US7507304B2 (en) * 2002-11-21 2009-03-24 Nippon Mining & Metals Co., Ltd. Copper alloy sputtering target and semiconductor element wiring

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923127A (en) 1972-06-26 1974-03-01
JPS60245754A (en) 1984-05-22 1985-12-05 Nippon Mining Co Ltd High strength copper alloy having high electric conductivity
JPS61231131A (en) * 1985-04-05 1986-10-15 Kobe Steel Ltd Corrosion resistant copper alloy pipe
JPH0653901B2 (en) * 1986-09-08 1994-07-20 古河電気工業株式会社 Copper alloy for electronic and electrical equipment
EP0260906B1 (en) 1986-09-17 1993-03-10 Fujitsu Limited Method of producing semiconductor device and semiconductor device
JPS6460633A (en) 1987-08-31 1989-03-07 Tokuyama Soda Kk Coating material
JPH0196374A (en) 1987-10-05 1989-04-14 Tanaka Kikinzoku Kogyo Kk Clad target material for sputtering
JPH01180976A (en) 1988-01-12 1989-07-18 Tanaka Kikinzoku Kogyo Kk Backing plate for sputtering
JPH0250432A (en) 1988-08-12 1990-02-20 Toshiba Corp Semiconductor device
JPH02119140A (en) 1988-10-28 1990-05-07 Seiko Epson Corp Integrated circuit device
JP2552920B2 (en) 1989-08-11 1996-11-13 住友金属鉱山株式会社 Copper alloy for backing plate
JP2862727B2 (en) 1992-05-12 1999-03-03 同和鉱業株式会社 Sputtering target for forming metal thin film and method for producing the same
JPH06140398A (en) 1992-10-27 1994-05-20 Kawasaki Steel Corp Integrated circuit device
EP0601509A1 (en) 1992-12-07 1994-06-15 Nikko Kyodo Co., Ltd. Semiconductor devices and method of manufacturing the same
JPH06177117A (en) * 1992-12-07 1994-06-24 Japan Energy Corp Sputter target and fabrication of semiconductor device employing it
JP3819487B2 (en) 1996-08-16 2006-09-06 同和鉱業株式会社 Manufacturing method of semiconductor device
JPH10330927A (en) 1997-06-05 1998-12-15 Riyouka Massey Kk Sputtering target material made of aluminum alloy
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JP3975414B2 (en) 1997-11-28 2007-09-12 日立金属株式会社 Sputtering copper target and method for producing the same
JPH11186273A (en) 1997-12-19 1999-07-09 Ricoh Co Ltd Semiconductor device and manufacture thereof
JP2000034562A (en) * 1998-07-14 2000-02-02 Japan Energy Corp Sputtering target and part used in apparatus for forming thin film
JP2000087158A (en) * 1998-09-11 2000-03-28 Furukawa Electric Co Ltd:The Copper alloy for semiconductor lead frame
JP2000208517A (en) * 1999-01-12 2000-07-28 Fujitsu Ltd Manufacture of semiconductor device
JP2000239836A (en) 1999-02-23 2000-09-05 Japan Energy Corp High purity copper or copper alloy sputtering target and its production
JP4005295B2 (en) 2000-03-31 2007-11-07 富士通株式会社 Manufacturing method of semiconductor device
US6228759B1 (en) 2000-05-02 2001-05-08 Advanced Micro Devices, Inc. Method of forming an alloy precipitate to surround interconnect to minimize electromigration
JP4460037B2 (en) * 2000-07-21 2010-05-12 古河電気工業株式会社 Method of heat treatment of copper alloy for electrical connection member and copper alloy for electrical connection member
JP2002294438A (en) 2001-04-02 2002-10-09 Mitsubishi Materials Corp Copper alloy sputtering target
JP2002294437A (en) 2001-04-02 2002-10-09 Mitsubishi Materials Corp Copper alloy sputtering target

Patent Citations (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3428442A (en) * 1966-09-22 1969-02-18 Eutectic Welding Alloys Coated spray-weld alloy powders
US3760146A (en) * 1971-10-14 1973-09-18 Chemetron Corp Phosphor bronze arc welding electrode for alternating current
US4224087A (en) * 1978-09-14 1980-09-23 National Research Institute For Metals Method for producing Nb3 Sn superconductor
US4822560A (en) * 1985-10-10 1989-04-18 The Furukawa Electric Co., Ltd. Copper alloy and method of manufacturing the same
JPH01123040A (en) * 1987-11-05 1989-05-16 Furukawa Electric Co Ltd:The Bus bar for electric connecting box
US5023698A (en) * 1988-03-30 1991-06-11 Hitachi, Ltd. Semiconductor device
US5077005A (en) * 1989-03-06 1991-12-31 Nippon Mining Co., Ltd. High-conductivity copper alloys with excellent workability and heat resistance
US6143427A (en) * 1995-07-12 2000-11-07 Federal-Mogul World Wide, Inc. Laminated material
US5853505A (en) * 1997-04-18 1998-12-29 Olin Corporation Iron modified tin brass
US6451135B1 (en) * 1997-06-02 2002-09-17 Japan Energy Corporation High-purity copper sputtering targets and thin films
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US6399496B1 (en) * 1998-04-27 2002-06-04 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
US6758920B2 (en) * 1999-11-24 2004-07-06 Honeywell International Inc. Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
US6797079B2 (en) * 1999-11-24 2004-09-28 Honeywell International Inc. Physical vapor deposition target
US20020024142A1 (en) * 2000-08-24 2002-02-28 Mitsuru Sekiguchi Semiconductor device and manufacturing method of the same
US20040004288A1 (en) * 2000-08-24 2004-01-08 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method of the same
US6482302B1 (en) * 2000-10-13 2002-11-19 Honeywell International Inc. Container-shaped physical vapor deposition targets
US20050121320A1 (en) * 2002-01-30 2005-06-09 Takeo Okabe Copper alloy sputtering target and method for manufacturing the target
US7507304B2 (en) * 2002-11-21 2009-03-24 Nippon Mining & Metals Co., Ltd. Copper alloy sputtering target and semiconductor element wiring
US20090139863A1 (en) * 2002-11-21 2009-06-04 Nippon Mining & Metals Co., Ltd. Copper Alloy Sputtering Target and Semiconductor Element Wiring
US20060088436A1 (en) * 2003-03-17 2006-04-27 Takeo Okabe Copper alloy sputtering target process for producing the same and semiconductor element wiring
US20070051624A1 (en) * 2003-12-25 2007-03-08 Nikko Materials Co., Ltd. Copper or copper alloy target/copper alloy backing plate assembly
US20070209547A1 (en) * 2004-08-10 2007-09-13 Nippon Mining & Metals Co., Ltd. Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060088436A1 (en) * 2003-03-17 2006-04-27 Takeo Okabe Copper alloy sputtering target process for producing the same and semiconductor element wiring
US7740721B2 (en) 2003-03-17 2010-06-22 Nippon Mining & Metals Co., Ltd Copper alloy sputtering target process for producing the same and semiconductor element wiring
US20100219070A1 (en) * 2003-03-17 2010-09-02 Nippon Mining & Metals Co., Ltd. Copper Alloy Sputtering Target, Process for Producing the Same and Semiconductor Element Wiring
US9765425B2 (en) 2003-03-17 2017-09-19 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target, process for producing the same and semiconductor element wiring
US20100013096A1 (en) * 2006-10-03 2010-01-21 Nippon Mining & Metals Co., Ltd. Cu-Mn Alloy Sputtering Target and Semiconductor Wiring
US20110163447A1 (en) * 2008-09-30 2011-07-07 Jx Nippon Mining & Metals Corporation High-Purity Copper or High-Purity Copper Alloy Sputtering Target, Process for Manufacturing the Sputtering Target, and High-Purity Copper or High-Purity Copper Alloy Sputtered Film
US9441289B2 (en) 2008-09-30 2016-09-13 Jx Nippon Mining & Metals Corporation High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film
US9090970B2 (en) 2011-09-14 2015-07-28 Jx Nippon Mining & Metals Corporation High-purity copper-manganese-alloy sputtering target
US9165750B2 (en) 2012-01-23 2015-10-20 Jx Nippon Mining & Metals Corporation High purity copper—manganese alloy sputtering target
US10297429B2 (en) 2012-01-25 2019-05-21 Jx Nippon Mining & Metals Corporation High-purity copper-chromium alloy sputtering target
US10276356B2 (en) 2013-03-07 2019-04-30 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target
US10494712B2 (en) 2015-05-21 2019-12-03 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target and method for manufacturing same

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US7507304B2 (en) 2009-03-24
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