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US20080272435A1 - Semiconductor device and method of forming the same - Google Patents

Semiconductor device and method of forming the same Download PDF

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Publication number
US20080272435A1
US20080272435A1 US11/743,650 US74365007A US2008272435A1 US 20080272435 A1 US20080272435 A1 US 20080272435A1 US 74365007 A US74365007 A US 74365007A US 2008272435 A1 US2008272435 A1 US 2008272435A1
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Prior art keywords
gate structure
semiconductor device
gate
substrate
layer
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US11/743,650
Inventor
Chien-Ting Lin
Li-Wei Cheng
Che-Hua Hsu
Yao-Tsung Huang
Guang-Hwa Ma
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United Microelectronics Corp
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United Microelectronics Corp
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Priority to US11/743,650 priority Critical patent/US20080272435A1/en
Assigned to UNITED MICROELECTRONICS CORP. reassignment UNITED MICROELECTRONICS CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHENG, LI-WEI, HSU, CHE-HUA, HUANG, YAO-TSUNG, LIN, CHIEN-TING, MA, GUANG-HWA
Priority to US12/198,111 priority patent/US7759202B2/en
Publication of US20080272435A1 publication Critical patent/US20080272435A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Definitions

  • the present invention relates to a semiconductor device and the method for forming the same. More particularly, the present invention relates to a semiconductor device with two different MOS structures.
  • MOSFET Metal-oxide-semiconductor field-effect transistor
  • P-type and N-Type i.e. PMOS and NMOS.
  • PMOS and NMOS each has different threshold voltages, which are determined by the difference of the work function of the gate and the channel material. This can be accomplished by two different metals as the gate materials.
  • U.S. Pat. No. 7,074,664 discloses that firstly a first gate electrode material layer is entirely formed on a substrate, later a selective etching is performed based on a well defined patterned hard mask, then a second gate electrode material layer fills the space caused by the selective etching, finally the surfaces of the first gate electrode material layer and the second gate electrode material layer are planarized to complete the fabrication.
  • the present invention provides a semiconductor device with a PMOS and an NMOS, in one of which, one conductive material stacks on another one on a substrate to form a composite gate electrode and the other one has only one conductive material to form a single electrode.
  • one conductive material stacks on another one on a substrate to form a composite gate electrode and the other one has only one conductive material to form a single electrode.
  • the conductive materials of the PMOS and the NMOS neighboring the substrate one has the work function higher than the substrate's and the other one has a lower one to provide the different threshold voltages required by the PMOS and the NMOS.
  • the semiconductor device of the present invention includes a substrate, on the substrate a first gate structure including a gate dielectric directly contacting the substrate, a lower electrode on the gate dielectric and an upper electrode on the lower electrode, a first source/drain in the proximity of the first gate structure, on the substrate a second gate structure including the gate dielectric directly contacting the substrate and a gate electrode on the gate dielectric, a second source/drain in the proximity of the second gate structure and an interlayer dielectric layer covering the substrate, the first gate structure, the first source/drain, the second gate structure and the second source/drain.
  • the first gate structure includes a lower electrode and an upper electrode, each one is comprised of a conductive material different from the other.
  • the lower electrode on the gate dielectric is in charge of controlling the threshold voltage of such MOS.
  • the second gate structure which is of similar or the same material solely includes one gate electrode for controlling the threshold voltage, to be distinguished from that of the first gate structure, controlled by the lower electrode.
  • the present invention provides a method for forming a semiconductor device.
  • the method includes first providing a substrate with an oxide layer on its surface, later forming a lower electrode layer on the oxide layer and selectively exposing part of the oxide layer, afterwards depositing a silicon layer to cover the lower electrode layer and the oxide layer, then forming a barrier layer on the silicon layer, following etching the barrier layer, the silicon layer, the lower electrode layer and the oxide layer to selectively expose the substrate, later forming a first gate structure and a second gate structure, wherein the first gate structure includes the silicon layer, the lower electrode layer and the oxide layer and the second gate structure includes the oxide layer and the silicon layer directly contacting the oxide layer, then forming a first source/drain in the proximity of the first gate structure and a second source/drain in the proximity of the second gate structure in the exposed substrate, and forming a gate electrode layer by reacting the silicon layers with a metal.
  • the lower electrode layer is selectively formed.
  • the following silicon layer may entirely cover the lower electrode layer.
  • it is neither required to selectively etch the lower electrode layer nor to planarize the separately formed lower electrode layer and the silicon layer to the same surface, rather to primarily form a silicide layer made from the silicon layer. Obviously many complicated steps are omitted and this is a simple and easy approach.
  • the advantages of the present invention reside in that the threshold voltages of each gate structure are determined by ingeniously taking the advantages of the difference of the work function between the silicide layer formed by the silicon layer and a metal and the lower electrode layer.
  • one has the work function higher than the substrate's and the other one has a lower one.
  • This is a simple and easy way to form the PMOS and the NMOS with different threshold voltages and to meet the demand of a more simplified process.
  • FIG. 1 illustrates a preferred embodiment of the semiconductor device of the present invention.
  • FIG. 2 to FIG. 8 illustrate the method for forming the semiconductor device of the present invention.
  • the present invention first provides a semiconductor device which includes a PMOS and an NMOS.
  • a semiconductor device which includes a PMOS and an NMOS.
  • one conductive material stacks on another one on the gate dielectric of the substrate to form a composite gate electrode and the other has only one conductive material to form a single electrode.
  • one has the work function higher than the substrate's and the other one has a lower one to provide the different threshold voltages required by the PMOS and the NMOS.
  • FIG. 1 illustrates a preferred embodiment of the semiconductor device of the present invention.
  • the semiconductor device 1 of the present invention includes the substrate 10 , the first gate structure 20 , the first source/drain 30 , the second gate structure 40 , the second source/drain 50 and the interlayer dielectric 60 covering the substrate 10 , the first gate structure 20 , the first source/drain 30 , the second gate structure 40 and the second source/drain 50 .
  • the substrate 10 may be a semiconductor substrate, such as silicon, direct-silicon bonding (DSB), silicon on insulator (SOI) and silicon on insulator direct-silicon bonding (SOIDSB), but is not limited to these.
  • DSB direct-silicon bonding
  • SOI silicon on insulator
  • SOIDSB silicon on insulator direct-silicon bonding
  • the first gate structure 20 on the substrate 10 includes a gate dielectric 21 , a lower electrode 22 and an upper electrode 23 .
  • the second gate structure 40 on the substrate 10 includes a gate dielectric 41 directly contacting the substrate 10 and a gate electrode 42 on the gate dielectric 41 .
  • the lower electrode 22 is directly disposed on the gate dielectric 21 and the upper electrode 23 is directly on the lower electrode 22 .
  • the first gate structure 20 and the second gate structure 40 may be any conventional gate structure, such as a normal gate, a FinFET or a multigate . . . etc.
  • the gate dielectric 21 / 41 usually includes oxides, nitrides, oxynitrides, or high k materials such as metal oxides, silicon oxides, silicon nitrides, and silicon oxynitrides . . . etc.
  • the lower electrode has a thickness of 10-300 ⁇ .
  • the selection of the materials for the lower electrode 22 and the gate electrode 42 depends on whether the first gate structure 20 is an N-channel metal-oxide semiconductor gate structure or a P-channel metal-oxide semiconductor gate structure.
  • the lower electrode 22 in the first gate structure may include a conductive material with a work function smaller than that of the substrate 10 and the gate electrode 42 in the second gate structure may include a conductive material with a work function higher than that of the substrate 10 .
  • the lower electrode 22 of the P-channel MOS in the first gate structure may include a conductive material such as titanium, titanium nitride, Co, Ni, Pt or Ir, preferably titanium nitride, due to the work function of silicon being 4.6 eV.
  • the gate electrode 42 may include silicide, such as Ni-rich silicide Ni 2 Si.
  • the upper electrode 23 may include any suitable conductive material, such as poly-Si, a metal or a silicide.
  • the lower electrode 22 in the first gate structure may include a conductive material with a work function higher than that of the substrate 10 and the gate electrode 42 in the second gate structure may include a conductive material with a work function smaller than that of the substrate 10 .
  • the lower electrode 22 may include MC x , MB x , MC x N y , MB x N y , MB x C y or the combination thereof, wherein M is a metal of (III) group to (VII) group, preferably TaC.
  • the gate electrode 42 may include silicide, such as Si-rich silicide NiSi 2 .
  • the upper electrode 23 may include any suitable conductive material, such as poly-Si, a metal or a silicide.
  • the first source/drain 30 and the second source/drain 50 of the present invention may be formed by any suitable method, so that the first source/drain 30 is in the proximity of the first gate structure 20 and the second source/drain 50 is in the proximity of the second gate structure 40 , which are known by persons of ordinary skill in the art and the details will not be described.
  • the surface of the first source/drain 30 and the second source/drain 50 may independently include a silicide, such as cobalt silicide or nickel silicide.
  • the interlayer dielectric 60 may include a plurality of contact holes 61 so as to expose the first gate structure 20 , the first source/drain 30 , the second gate structure 40 and the second source/drain 50 to form the contact plugs.
  • the interlayer dielectric 60 may be formed by any suitable method and material.
  • the semiconductor device 1 of the present invention may further include additional elements, such as a stress layer (not shown) in the proximity of the first gate structure 20 and the second gate structure 40 .
  • a stress layer (not shown) in the proximity of the first gate structure 20 and the second gate structure 40 .
  • NMOS it may include a recess filled with SiC or a tension layer above.
  • PMOS it may include a recess filled with SiGe or a compression layer above.
  • the lower electrode in the first gate structure is in charge of controlling the threshold voltage of such MOS and in the second gate structure the sole gate electrode includes another conductive material for controlling the threshold voltage of such MOS.
  • Two different conductive materials therefore form the PMOS and the NMOS respectively.
  • This semiconductor device has simple structure and is easy to be manufactured.
  • FIG. 2 to FIG. 8 illustrate the method for forming the semiconductor device 200 of the present invention.
  • the substrate 210 which includes an oxide layer 211 on its surface as gate dielectric, is provided.
  • the substrate 210 may be a semiconductor substrate, such as silicon, direct-silicon bonding, silicon on insulator and silicon on insulator direct silicon bonding, but is not limited to these.
  • the oxide layer 211 may include oxides, nitrides, oxynitrides, or high k materials such as metal oxides, silicon oxides, silicon nitrides, and silicon oxynitrides.
  • the lower electrode layer 220 is formed on the oxide layer 211 by deposition, lithography and etching method and exposes part of the oxide layer 211 a selectively.
  • the lower electrode layer 220 may have a thickness of 10-300 ⁇ , preferably 50-100 ⁇ .
  • the selection of the materials for the lower electrode layer 220 depends on whether an N-channel metal-oxide semiconductor gate structure or a P-channel metal-oxide semiconductor gate structure is about to be formed. For example, if a P-channel metal-oxide semiconductor gate structure is about to be formed, the lower electrode layer 220 may include a conductive material with a work function smaller than that of the substrate 210 .
  • the lower electrode layer 220 may include a conductive material such as titanium, titanium nitride, Co, Ni, Pt or Ir, preferably titanium nitride, due to the work function of silicon being 4.6 eV.
  • the lower electrode layer 220 may include a conductive material with a work function higher than that of the substrate 210 .
  • the lower electrode layer 220 may include MC x , MB x , MC x N y , MB x N y , MB x C y or the combination thereof, wherein M is a metal of (III) group to (VII) group, preferably TaC.
  • a silicon layer 230 is deposited to cover the lower electrode layer 220 and the exposed oxide layer 211 a.
  • the silicon layer 230 may preferably include poly-Si and be formed by any suitable method.
  • a barrier layer 240 may be further formed on the silicon layer 230 .
  • the barrier layer 240 may preferably include nitrides as a cap layer for the following gate structure.
  • the barrier layer 240 , the silicon layer 230 , the lower electrode layer 220 and the oxide layer 210 are etched to selectively expose part of the substrate 210 a to accomplish the preliminary structure of the first gate structure 202 and the second gate structure 204 .
  • the first gate structure 202 and the second gate structure 204 may be any conventional gate structure, such as a normal gate, a FinFET or a multigate.
  • a patterned mask (not shown), such as a patterned photoresist, may be useful in assisting etching and forming the profile of the first gate structure 202 and the second gate structure 204 .
  • the first gate structure 202 and the second gate structure 204 are about to be completed.
  • the first gate structure 202 and the second gate structure 204 may be modified or an additional part may be introduced, such as sidewalls 241 .
  • the completed first gate structure 202 include the barrier layer 240 , the silicon layer 230 , the lower electrode layer 220 and the oxide layer 211 and the second gate structure 204 includes the barrier layer 240 , the oxide layer 211 and the silicon layer 230 directly contacting the oxide layer 211 .
  • the first source/drain 251 in the proximity of the first gate structure 202 and the second source/drain 252 in the proximity of the second gate structure 204 are formed in the exposed substrate 210 a, which can be formed by any suitable method.
  • the first source/drain 251 and the second source/drain 252 may independently include a silicide, such cobalt silicide or nickel silicide.
  • a metal layer may be formed and subsequently the gate electrode 231 can be formed by reacting the silicon layer 230 with the metal layer (FUSI).
  • the metal layer may include Ti, Co, Ni, Pt or Ir, preferably Ni. This step may contain many variations.
  • the gate electrode 231 may include a conductive material with a work function higher than that of the substrate 210 , a silicide for instance, such as Ni-rich silicide Ni 2 Si.
  • the gate electrode 231 may include a conductive material with a work function smaller than that of the substrate 210 , silicide for example, such as Si-rich silicide NiSi 2 .
  • silicide for example, such as Si-rich silicide NiSi 2 .
  • the material of the upper electrode of the first gate structure and the gate electrode of the second gate structure is deposited simultaneously, the material is basically the same.
  • an ion Implantation may be performed before the FUSI to adjust the work function of the upper electrode and, in particular, the gate electrode to render the obtained work function of the gate electrode to distinguish from that of the lower electrode.
  • the ultimate materials of the upper electrode and, in particular, the gate electrode are similar but different.
  • the method of the present invention may further include additional steps.
  • a stress layer (not shown) may be formed in the proximity of the first gate structure 202 and the second gate structure 204 .
  • NMOS it may include a recess filled with SiC or a tension layer above.
  • PMOS it may include a recess filled with SiGe or a compression layer above.
  • a lightly doped drain may be firstly formed after the substrate 210 a is exposed.
  • the source/drain and an interlayer dielectric layer may be formed before or after the silicon layer 230 reacts with the metal layer.
  • the interlayer dielectric layer (not shown) may be first formed, which covers the first gate structure 202 , the first source/drain 251 , the second gate structure 204 and the second source/drain 252 and exposes the silicon layer 230 of the first gate structure 202 and the second gate structure 204 respectively.
  • the gate electrode 231 is formed by reacting the silicon layer 230 with the metal layer (FUSI), the excess metal layer is then removed and a plurality of contact holes are formed in the interlayer dielectric layer so as to expose the first gate structure 202 , the first source/drain 251 , the second gate structure 204 and the second source/drain 252 .
  • FUSI metal layer
  • the process may be adjusted according to the nature of the silicide.
  • the barrier layer 240 can be directly removed and the metal layer of nickel silicide is formed, and after the gate electrode 231 is formed by reacting the silicon layer 230 with the metal layer (FUSI), the excess metal layer is then removed and the interlayer dielectric layer is formed, which has a plurality of contact holes exposing the first gate structure 202 , the first source/drain 251 , the second gate structure 204 and the second source/drain 252 .
  • This example is for demonstration only. There are still many other possible variations in addition to this.
  • the lower electrode layer is selectively formed.
  • the followed silicon layer may entirely cover the lower electrode layer.
  • it is neither required to selectively etch the lower electrode layer nor to planarize the separately formed lower electrode layer and the silicon layer to the same surface, rather to primarily form a silicide layer made from the silicon layer.
  • Clearly many complicated steps are omitted and this is a simple and easy approach.
  • the advantages of the method reside in that the threshold voltages of each gate structure are determined by ingeniously taking the advantage of the difference of the work function between the silicide formed by the silicon layer and a metal and the lower electrode layer. This is a simple and easy way to form PMOS and NMOS with different threshold voltages and to meet the demand of a more simplified process.

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Abstract

A semiconductor device includes a first gate structure including a gate dielectric layer directly contacting the substrate, a bottom electrode on the gate dielectric layer and a top electrode on the bottom electrode, and a second gate structure including a gate dielectric layer directly contacting the substrate and a gate electrode on the gate dielectric layer.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a semiconductor device and the method for forming the same. More particularly, the present invention relates to a semiconductor device with two different MOS structures.
  • 2. Description of the Prior Art
  • Metal-oxide-semiconductor field-effect transistor, MOSFET for short, is a widely used field-effect transistor. According to the polarity of its channel, the MOSFET is divided into the P-type and the N-Type, i.e. PMOS and NMOS.
  • Functionally speaking, PMOS and NMOS each has different threshold voltages, which are determined by the difference of the work function of the gate and the channel material. This can be accomplished by two different metals as the gate materials.
  • Because two layers of different metals are required to be the gate material, conventionally the two layers are formed respectively. For example, U.S. Pat. No. 7,074,664 discloses that firstly a first gate electrode material layer is entirely formed on a substrate, later a selective etching is performed based on a well defined patterned hard mask, then a second gate electrode material layer fills the space caused by the selective etching, finally the surfaces of the first gate electrode material layer and the second gate electrode material layer are planarized to complete the fabrication.
  • In U.S. patent publication 2005/095763, it discloses that a sacrificial layer is entirely formed on a substrate, later the sacrificial layer is selectively removed to be filled with a first gate electrode material layer, then the sacrificial layer is completely removed to be filled with a second gate electrode material layer to complete the fabrication.
  • No matter which fashion is used, a selective etching must be performed to form different metal layers for respectively deciding the threshold voltages of the PMOS and NMOS. It is clear that the concept of forming the first gate electrode material layer first and followed by the etching to form the second gate electrode is both complex and troublesome and does not meet the demand of simplicity pursued by the industry.
  • Therefore, it is necessary to provide a simple and convenient method for forming a PMOS and an NMOS with different threshold voltages.
    • SUMMARY OF THE INVENTION
  • In one aspect the present invention provides a semiconductor device with a PMOS and an NMOS, in one of which, one conductive material stacks on another one on a substrate to form a composite gate electrode and the other one has only one conductive material to form a single electrode. Preferably, of the conductive materials of the PMOS and the NMOS neighboring the substrate, one has the work function higher than the substrate's and the other one has a lower one to provide the different threshold voltages required by the PMOS and the NMOS.
  • The semiconductor device of the present invention includes a substrate, on the substrate a first gate structure including a gate dielectric directly contacting the substrate, a lower electrode on the gate dielectric and an upper electrode on the lower electrode, a first source/drain in the proximity of the first gate structure, on the substrate a second gate structure including the gate dielectric directly contacting the substrate and a gate electrode on the gate dielectric, a second source/drain in the proximity of the second gate structure and an interlayer dielectric layer covering the substrate, the first gate structure, the first source/drain, the second gate structure and the second source/drain.
  • The first gate structure includes a lower electrode and an upper electrode, each one is comprised of a conductive material different from the other. The lower electrode on the gate dielectric is in charge of controlling the threshold voltage of such MOS. The second gate structure which is of similar or the same material solely includes one gate electrode for controlling the threshold voltage, to be distinguished from that of the first gate structure, controlled by the lower electrode.
  • In another aspect the present invention provides a method for forming a semiconductor device. The method includes first providing a substrate with an oxide layer on its surface, later forming a lower electrode layer on the oxide layer and selectively exposing part of the oxide layer, afterwards depositing a silicon layer to cover the lower electrode layer and the oxide layer, then forming a barrier layer on the silicon layer, following etching the barrier layer, the silicon layer, the lower electrode layer and the oxide layer to selectively expose the substrate, later forming a first gate structure and a second gate structure, wherein the first gate structure includes the silicon layer, the lower electrode layer and the oxide layer and the second gate structure includes the oxide layer and the silicon layer directly contacting the oxide layer, then forming a first source/drain in the proximity of the first gate structure and a second source/drain in the proximity of the second gate structure in the exposed substrate, and forming a gate electrode layer by reacting the silicon layers with a metal.
  • In the method of the present invention, only the lower electrode layer is selectively formed. The following silicon layer may entirely cover the lower electrode layer. In the method of the present invention, it is neither required to selectively etch the lower electrode layer nor to planarize the separately formed lower electrode layer and the silicon layer to the same surface, rather to primarily form a silicide layer made from the silicon layer. Obviously many complicated steps are omitted and this is a simple and easy approach. The advantages of the present invention reside in that the threshold voltages of each gate structure are determined by ingeniously taking the advantages of the difference of the work function between the silicide layer formed by the silicon layer and a metal and the lower electrode layer. Preferably, of the silicide layer and the lower electrode layer respectively in the two separate gate structures, one has the work function higher than the substrate's and the other one has a lower one. This is a simple and easy way to form the PMOS and the NMOS with different threshold voltages and to meet the demand of a more simplified process.
  • These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 illustrates a preferred embodiment of the semiconductor device of the present invention.
  • FIG. 2 to FIG. 8 illustrate the method for forming the semiconductor device of the present invention.
    •  DETAILED DESCRIPTION
  • The present invention first provides a semiconductor device which includes a PMOS and an NMOS. In one of which, one conductive material stacks on another one on the gate dielectric of the substrate to form a composite gate electrode and the other has only one conductive material to form a single electrode. Preferably, of the two conductive materials, one has the work function higher than the substrate's and the other one has a lower one to provide the different threshold voltages required by the PMOS and the NMOS.
  • FIG. 1 illustrates a preferred embodiment of the semiconductor device of the present invention. Please refer to FIG. 1, the semiconductor device 1 of the present invention includes the substrate 10, the first gate structure 20, the first source/drain 30, the second gate structure 40, the second source/drain 50 and the interlayer dielectric 60 covering the substrate 10, the first gate structure 20, the first source/drain 30, the second gate structure 40 and the second source/drain 50. The substrate 10 may be a semiconductor substrate, such as silicon, direct-silicon bonding (DSB), silicon on insulator (SOI) and silicon on insulator direct-silicon bonding (SOIDSB), but is not limited to these.
  • The first gate structure 20 on the substrate 10 includes a gate dielectric 21, a lower electrode 22 and an upper electrode 23. The second gate structure 40 on the substrate 10 includes a gate dielectric 41 directly contacting the substrate 10 and a gate electrode 42 on the gate dielectric 41. The lower electrode 22 is directly disposed on the gate dielectric 21 and the upper electrode 23 is directly on the lower electrode 22.
  • The first gate structure 20 and the second gate structure 40 may be any conventional gate structure, such as a normal gate, a FinFET or a multigate . . . etc. The gate dielectric 21/41 usually includes oxides, nitrides, oxynitrides, or high k materials such as metal oxides, silicon oxides, silicon nitrides, and silicon oxynitrides . . . etc. Preferably the lower electrode has a thickness of 10-300 Å.
  • The selection of the materials for the lower electrode 22 and the gate electrode 42 depends on whether the first gate structure 20 is an N-channel metal-oxide semiconductor gate structure or a P-channel metal-oxide semiconductor gate structure. For example, if the first gate structure is a P-channel metal-oxide semiconductor gate structure and the second gate structure is an N-channel metal-oxide semiconductor gate structure, the lower electrode 22 in the first gate structure may include a conductive material with a work function smaller than that of the substrate 10 and the gate electrode 42 in the second gate structure may include a conductive material with a work function higher than that of the substrate 10. For instance, if the substrate is silicon, the lower electrode 22 of the P-channel MOS in the first gate structure may include a conductive material such as titanium, titanium nitride, Co, Ni, Pt or Ir, preferably titanium nitride, due to the work function of silicon being 4.6 eV. The gate electrode 42 may include silicide, such as Ni-rich silicide Ni2Si. The upper electrode 23 may include any suitable conductive material, such as poly-Si, a metal or a silicide.
  • Or, if the first gate structure is an N-channel metal-oxide semiconductor gate structure and the second gate structure is a P-channel metal-oxide semiconductor gate structure, the lower electrode 22 in the first gate structure may include a conductive material with a work function higher than that of the substrate 10 and the gate electrode 42 in the second gate structure may include a conductive material with a work function smaller than that of the substrate 10. For instance, if the substrate is silicon, the lower electrode 22 may include MCx, MBx, MCxNy, MBxNy, MBxCy or the combination thereof, wherein M is a metal of (III) group to (VII) group, preferably TaC. The gate electrode 42 may include silicide, such as Si-rich silicide NiSi2. The upper electrode 23 may include any suitable conductive material, such as poly-Si, a metal or a silicide.
  • The first source/drain 30 and the second source/drain 50 of the present invention may be formed by any suitable method, so that the first source/drain 30 is in the proximity of the first gate structure 20 and the second source/drain 50 is in the proximity of the second gate structure 40, which are known by persons of ordinary skill in the art and the details will not be described. In addition, the surface of the first source/drain 30 and the second source/drain 50 may independently include a silicide, such as cobalt silicide or nickel silicide.
  • The interlayer dielectric 60 may include a plurality of contact holes 61 so as to expose the first gate structure 20, the first source/drain 30, the second gate structure 40 and the second source/drain 50 to form the contact plugs. The interlayer dielectric 60 may be formed by any suitable method and material.
  • If necessary, the semiconductor device 1 of the present invention may further include additional elements, such as a stress layer (not shown) in the proximity of the first gate structure 20 and the second gate structure 40. For example, for NMOS it may include a recess filled with SiC or a tension layer above. For PMOS it may include a recess filled with SiGe or a compression layer above.
  • The lower electrode in the first gate structure is in charge of controlling the threshold voltage of such MOS and in the second gate structure the sole gate electrode includes another conductive material for controlling the threshold voltage of such MOS. Two different conductive materials (the lower electrode in the first gate structure and the gate electrode in the second gate structure) therefore form the PMOS and the NMOS respectively. This semiconductor device has simple structure and is easy to be manufactured.
  • FIG. 2 to FIG. 8 illustrate the method for forming the semiconductor device 200 of the present invention. First, the substrate 210, which includes an oxide layer 211 on its surface as gate dielectric, is provided. The substrate 210 may be a semiconductor substrate, such as silicon, direct-silicon bonding, silicon on insulator and silicon on insulator direct silicon bonding, but is not limited to these. The oxide layer 211 may include oxides, nitrides, oxynitrides, or high k materials such as metal oxides, silicon oxides, silicon nitrides, and silicon oxynitrides.
  • Please refer to FIG. 3. The lower electrode layer 220 is formed on the oxide layer 211 by deposition, lithography and etching method and exposes part of the oxide layer 211 a selectively. The lower electrode layer 220 may have a thickness of 10-300 Å, preferably 50-100 Å. The selection of the materials for the lower electrode layer 220 depends on whether an N-channel metal-oxide semiconductor gate structure or a P-channel metal-oxide semiconductor gate structure is about to be formed. For example, if a P-channel metal-oxide semiconductor gate structure is about to be formed, the lower electrode layer 220 may include a conductive material with a work function smaller than that of the substrate 210. For instance, if the substrate is silicon, the lower electrode layer 220 may include a conductive material such as titanium, titanium nitride, Co, Ni, Pt or Ir, preferably titanium nitride, due to the work function of silicon being 4.6 eV. Or, if an N-channel metal-oxide semiconductor gate structure is about to be formed, the lower electrode layer 220 may include a conductive material with a work function higher than that of the substrate 210. For instance, if the substrate is silicon, the lower electrode layer 220 may include MCx, MBx, MCxNy, MBxNy, MBxCy or the combination thereof, wherein M is a metal of (III) group to (VII) group, preferably TaC.
  • Please refer to FIG. 4. A silicon layer 230 is deposited to cover the lower electrode layer 220 and the exposed oxide layer 211 a. The silicon layer 230 may preferably include poly-Si and be formed by any suitable method. A barrier layer 240 may be further formed on the silicon layer 230. The barrier layer 240 may preferably include nitrides as a cap layer for the following gate structure.
  • Please refer to FIG. 5. Now the barrier layer 240, the silicon layer 230, the lower electrode layer 220 and the oxide layer 210 are etched to selectively expose part of the substrate 210 a to accomplish the preliminary structure of the first gate structure 202 and the second gate structure 204. The first gate structure 202 and the second gate structure 204 may be any conventional gate structure, such as a normal gate, a FinFET or a multigate. A patterned mask (not shown), such as a patterned photoresist, may be useful in assisting etching and forming the profile of the first gate structure 202 and the second gate structure 204.
  • Please refer to FIG. 6. The first gate structure 202 and the second gate structure 204 are about to be completed. For example, in this step the first gate structure 202 and the second gate structure 204 may be modified or an additional part may be introduced, such as sidewalls 241. The completed first gate structure 202 include the barrier layer 240, the silicon layer 230, the lower electrode layer 220 and the oxide layer 211 and the second gate structure 204 includes the barrier layer 240, the oxide layer 211 and the silicon layer 230 directly contacting the oxide layer 211.
  • Please refer to FIG. 7. The first source/drain 251 in the proximity of the first gate structure 202 and the second source/drain 252 in the proximity of the second gate structure 204 are formed in the exposed substrate 210 a, which can be formed by any suitable method. Preferably, the first source/drain 251 and the second source/drain 252 may independently include a silicide, such cobalt silicide or nickel silicide.
  • Please refer to FIG. 8. A metal layer may be formed and subsequently the gate electrode 231 can be formed by reacting the silicon layer 230 with the metal layer (FUSI). The metal layer may include Ti, Co, Ni, Pt or Ir, preferably Ni. This step may contain many variations. For example, if the second gate structure 204 is an NMOS, the gate electrode 231 may include a conductive material with a work function higher than that of the substrate 210, a silicide for instance, such as Ni-rich silicide Ni2Si. Or, if the second gate structure 204 is a PMOS, the gate electrode 231 may include a conductive material with a work function smaller than that of the substrate 210, silicide for example, such as Si-rich silicide NiSi2. In addition, since the material of the upper electrode of the first gate structure and the gate electrode of the second gate structure is deposited simultaneously, the material is basically the same. However, an ion Implantation may be performed before the FUSI to adjust the work function of the upper electrode and, in particular, the gate electrode to render the obtained work function of the gate electrode to distinguish from that of the lower electrode. Hence, the ultimate materials of the upper electrode and, in particular, the gate electrode are similar but different.
  • If necessary, the method of the present invention may further include additional steps. For example, a stress layer (not shown) may be formed in the proximity of the first gate structure 202 and the second gate structure 204. For instance, for NMOS it may include a recess filled with SiC or a tension layer above. For PMOS it may include a recess filled with SiGe or a compression layer above. Alternatively, a lightly doped drain may be firstly formed after the substrate 210 a is exposed.
  • Moreover, the source/drain and an interlayer dielectric layer may be formed before or after the silicon layer 230 reacts with the metal layer. For example, the interlayer dielectric layer (not shown) may be first formed, which covers the first gate structure 202, the first source/drain 251, the second gate structure 204 and the second source/drain 252 and exposes the silicon layer 230 of the first gate structure 202 and the second gate structure 204 respectively. After the gate electrode 231 is formed by reacting the silicon layer 230 with the metal layer (FUSI), the excess metal layer is then removed and a plurality of contact holes are formed in the interlayer dielectric layer so as to expose the first gate structure 202, the first source/drain 251, the second gate structure 204 and the second source/drain 252.
  • Besides, the process may be adjusted according to the nature of the silicide. For example, if the surfaces of the first source/drain 251 and the second source/drain 252 include cobalt silicide, the barrier layer 240 can be directly removed and the metal layer of nickel silicide is formed, and after the gate electrode 231 is formed by reacting the silicon layer 230 with the metal layer (FUSI), the excess metal layer is then removed and the interlayer dielectric layer is formed, which has a plurality of contact holes exposing the first gate structure 202, the first source/drain 251, the second gate structure 204 and the second source/drain 252. This example is for demonstration only. There are still many other possible variations in addition to this.
  • In the method of the present invention, only the lower electrode layer is selectively formed. The followed silicon layer may entirely cover the lower electrode layer. In the method of the present invention, it is neither required to selectively etch the lower electrode layer nor to planarize the separately formed lower electrode layer and the silicon layer to the same surface, rather to primarily form a silicide layer made from the silicon layer. Clearly many complicated steps are omitted and this is a simple and easy approach. The advantages of the method reside in that the threshold voltages of each gate structure are determined by ingeniously taking the advantage of the difference of the work function between the silicide formed by the silicon layer and a metal and the lower electrode layer. This is a simple and easy way to form PMOS and NMOS with different threshold voltages and to meet the demand of a more simplified process.
  • Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (21)

1. A semiconductor device, comprising:
a substrate;
a first gate structure on said substrate, comprising:
a gate dielectric directly contacting said substrate;
a lower electrode on said gate dielectric; and
an upper electrode on said lower electrode;
a first source/drain in the proximity of said first gate structure;
a second gate structure on said substrate, comprising said gate dielectric directly contacting said substrate and a gate electrode on said gate dielectric;
a second source/drain in the proximity of said second gate structure; and
an interlayer dielectric covering said substrate, said first gate structure, said first source/drain, said second gate structure and said second source/drain.
2. The semiconductor device of claim 1, wherein said substrate is selected from the group consisting of silicon, direct-silicon bonding, silicon on insulator, and silicon on insulator direct silicon bonding.
3. The semiconductor device of claim 1, wherein said lower electrode has a thickness of 10-300Å.
4. The semiconductor device of claim 1, wherein said upper electrode comprises a silicide.
5. The semiconductor device of claim 1, wherein said first source/drain comprises a silicide.
6. The semiconductor device of claim 4, wherein said gate electrode comprises a silicide.
7. The semiconductor device of claim 1, wherein said second source/drain comprises a silicide.
8. The semiconductor device of claim 1, wherein said first gate structure is a P-channel metal-oxide semiconductor gate structure and said second gate structure is an N-channel metal-oxide semiconductor gate structure.
9. The semiconductor device of claim 8, wherein said lower electrode comprises a conductive material with a work function smaller than that of said substrate.
10. The semiconductor device of claim 8, wherein said lower electrode comprises titanium nitride.
11. The semiconductor device of claim 8, wherein said gate electrode comprises a Ni-rich silicide.
12. The semiconductor device of claim 1, wherein said first gate structure is an N-channel metal-oxide semiconductor gate structure and said second gate structure is a P-channel metal-oxide semiconductor gate structure.
13. The semiconductor device of claim 12, wherein said lower electrode comprises a conductive material with a work function higher than that of said substrate.
14. The semiconductor device of claim 12, wherein said lower electrode comprises a group consisting of MCx, MBx, MCxNy, MBxNy and MBxCy, where M is a metal of (III) group to (VII) group.
15. The semiconductor device of claim 12, wherein said lower electrode comprises TaC.
16. The semiconductor device of claim 12, wherein said gate electrode comprises a Si-rich silicide.
17. The semiconductor device of claim 16, wherein said Si-rich silicide is nickel silicide.
18. The semiconductor device of claim 1, wherein said nickel silicide is NiSi2.
19. The semiconductor device of claim 1, further comprising a stress layer in the proximity of said first gate structure and said second gate structure.
20. The semiconductor device of claim 1, wherein said interlayer dielectric comprise a plurality of contact holes exposing said first gate structure, said first source/drain, said second gate structure and said second source/drain.
21-42. (canceled)
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