[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

US20060108543A1 - Weakening focusing effect of acceleration-deceleration column of ion implanter - Google Patents

Weakening focusing effect of acceleration-deceleration column of ion implanter Download PDF

Info

Publication number
US20060108543A1
US20060108543A1 US10/993,346 US99334604A US2006108543A1 US 20060108543 A1 US20060108543 A1 US 20060108543A1 US 99334604 A US99334604 A US 99334604A US 2006108543 A1 US2006108543 A1 US 2006108543A1
Authority
US
United States
Prior art keywords
deceleration
acceleration
tube lens
ion beam
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/993,346
Other versions
US7045799B1 (en
Inventor
Shengwu Chang
Joseph Olson
Donald Anderson
Daniel McGillicuddy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Priority to US10/993,346 priority Critical patent/US7045799B1/en
Assigned to VARIAN SEMICONDUTOR EQUP reassignment VARIAN SEMICONDUTOR EQUP ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MCGILLICUDDY, DANIEL, OLSON, JOSEPH P., ANDERSON, DONALD, CHANG, SHENGWU
Priority to PCT/US2005/042274 priority patent/WO2006068754A1/en
Priority to KR1020077013208A priority patent/KR101242462B1/en
Priority to KR1020127022472A priority patent/KR101242463B1/en
Priority to JP2007543389A priority patent/JP5276325B2/en
Priority to CN2005800448394A priority patent/CN101088138B/en
Priority to TW094140581A priority patent/TWI370486B/en
Publication of US7045799B1 publication Critical patent/US7045799B1/en
Application granted granted Critical
Publication of US20060108543A1 publication Critical patent/US20060108543A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10Lenses
    • H01J2237/12Lenses electrostatic

Definitions

  • the present invention relates generally to ion implanters, and more particularly, to a method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter.
  • Ion implanter 100 generates and transmits an ion beam 104 to a target 106 in an implant chamber 108 .
  • Ion implanter 100 includes a gas flow 140 ; an ion source 142 including a source magnet 144 and a source bias voltage controller 146 ; a suppression electrode 148 , an extraction electrode 150 and one or more manipulator motors (not shown) for electrodes 148 , 150 ; a filter magnet 151 ; a filter resolving aperture 152 ; an acceleration-deceleration column 200 ; an analyzer magnet 156 ; a mass slit 160 ; a pre-scan suppression electrode 162 ; horizontal scan plates 164 ; a post-scan suppression electrode 166 ; a nitrogen (N 2 ) bleed 168 ; a corrector magnet 170 ; a limiting aperture 172 ; and a profiler system 174 .
  • target 106 includes one or more semiconductor wafers mounted to a platen 114 .
  • ion beam acceleration-deceleration column 200 accelerates or decelerates ion beam 104 prior to mass analysis by analyzer magnet 156 ( FIG. 1 ).
  • ion beam 104 is formed at filter resolving aperture 202 from a ion source 142 trough extraction electrode 150 and filter magnet 151 , which removes most of unselected ions from beam 104 ( FIG. 1 ).
  • Ion beam 104 is initially formed with high energy because it is relatively difficult to obtain a beam with high beam current at low energies from ion source 142 directly. Accordingly, a conventional ion implanter 100 is designed to run at a reasonably high source extraction voltage, for example, greater than 40 kV to give generated ions initial upstream velocity.
  • Acceleration-deceleration column 200 applies different potential gradients that generate electric fields that decelerate (as shown in FIG. 2 ) or accelerate ion beam 104 depending on its mode as the ions pass through to give the ions their final velocity.
  • Acceleration-deceleration column 200 includes terminal electrodes 204 to receive ion beam 104 into accel-decel column 200 .
  • a focus electrode 206 provides an adjustable focusing effect to ion beam 104 , which also produces an electron trap to prevent the neutralizing electrons from being removed from the region of the beam-line located before the deceleration region during the deceleration mode.
  • a ground electrode 208 receive ion beam 104 with its final energy.
  • an electric field generated between terminal electrodes 204 and ground electrode 208 forms an acceleration lens by applying a positive voltage on terminal electrodes 204 to energize and accelerate the positively charged particles of ion beam 104 .
  • Acceleration-suppression electrode 210 is biased with a negative voltage that suppresses secondary electrons during the acceleration mode.
  • an electric field generated between terminal electrodes 204 and ground electrode 208 form a deceleration lens by applying a negative voltage on terminal electrodes 204 to de-energize and decelerate the positively charged particles in ion beam 104 .
  • acceleration-deceleration column 200 decelerates ion beam 104 and lowers its energy, it tends to drastically focus ion beam 104 .
  • the ions leave the deceleration lens, they have a large convergent angle, i.e., they are tending to move inwardly with a large vertical velocity component.
  • the large convergent angle causes ion beam 104 to have a large divergent angle afterwards, i.e., the ion will move outwardly with the same amount of vertical velocity component and thus increases the dispersion problem and reduce the transport efficiency of the low energy beam, i.e., ions are loss to dispersion as the beam exits accel-decel column 200 .
  • FIG. 2 shows a two-dimensional view of ion beam 104 envelope, the focusing action is dependent on radial position within ion beam 104 . That is, the closer to the inner edge of electrode 210 , the stronger the focusing effect.
  • the invention includes a method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode.
  • the apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column.
  • the tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column.
  • the invention also includes an accel-decel column and ion implanter incorporating the tube lens.
  • An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.
  • a first aspect of the invention is directed to an apparatus for weakening a focusing effect of an acceleration-deceleration column for an ion beam in an ion implanter, the apparatus comprising: a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column.
  • a second aspect of the invention is directed to an acceleration-deceleration column for an ion beam in an ion implanter, the acceleration-deceleration column comprising: a deceleration lens for decelerating the ion beam including terminal electrodes and a focus electrode adjacent the terminal electrodes and a ground electrode adjacent the focus electrode; and a tube lens surrounding the ion beam and adjacent to the deceleration lens.
  • a third aspect of the invention is directed to an ion implanter comprising: an ion source for generating an ion beam; an acceleration-deceleration column for accelerating or decelerating the ion beam, the acceleration-deceleration column including a deceleration lens; a tube lens surrounding the ion beam and adjacent to the deceleration lens; an analyzer magnet downstream from the tube lens; and an implant chamber for holding a target to be implanted by the ion beam.
  • a fourth aspect of the invention includes a method of weakening a focusing effect of an acceleration-deceleration column for an ion beam in an ion implanter, the method comprising the steps of: decelerating the ion beam using the acceleration-deceleration column; and transmitting the ion beam through a tube lens having a negative potential during the decelerating step to defocus the ion beam.
  • FIG. 1 shows a plan view of a conventional ion implanter.
  • FIG. 2 shows a cross-sectional view of an acceleration-deceleration column of the ion implanter of FIG. 1 in a deceleration mode.
  • FIG. 3 shows a cross-sectional view of the acceleration-deceleration column including a tube lens according to one embodiment of the invention in a deceleration mode.
  • FIG. 4 shows a cross-sectional view of the acceleration-deceleration column including a tube lens according to an alternative embodiment of the invention in a deceleration mode.
  • acceleration-deceleration column 240 includes the same structure as a conventional acceleration-deceleration column, except for the addition of an electrostatic tube lens 250 according to the invention. Although not shown of clarity except where necessary, each electrode is coupled to a controllable power source. As illustrated, tube lens 250 is an electrostatic, substantially cylindrical tube surrounding ion beam 104 adjacent to (not necessarily immediately) a deceleration lens 260 formed by terminal electrodes 204 , focus electrode 206 and ground electrode 208 .
  • Tube lens 250 includes a radially extending mount 252 for mounting it in place in accel-decel column 240 . As illustrated in FIG. 3 , tube lens 250 does not contact an acceleration-suppression electrode 210 of accel-decel column 200 .
  • accel-decel column 200 has an acceleration mode in which ion beam 104 is energized and accelerated and a deceleration mode (shown) in which ion beam 104 is de-energized and decelerated.
  • the acceleration mode (not shown)
  • terminal electrodes 204 are charged with a positive voltage such that terminal electrodes 204 , focus electrode 206 and ground electrode 208 form an acceleration lens that provide a positive potential gradient through which ion beam 104 passes, which generates an electric field to energize and accelerate the positively charged particles of ion beam 104 .
  • Acceleration-suppression electrode 210 is biased with a negative voltage that suppresses secondary electrons during the acceleration mode.
  • the deceleration mode which is shown in FIG.
  • terminal electrodes 204 are charged with a negative voltage such that terminal electrodes 204 , focus electrode 206 and ground electrode 208 form a deceleration lens 260 that provides a negative potential gradient through which ion beam 104 passes, which generates an electric field to de-energize and decelerate the positively charged particles in ion beam 104 .
  • the deceleration may be, for example, from an energy greater than 40 kV to less than 40 kV, which represents a low energy beam.
  • the ions leaving deceleration lens 260 have a large convergent angle, i.e., they are tending to focus or move inwardly. The large convergent angle causes ions to have a large divergent angle afterwards and thus increases the dispersion problem and reduces the transport efficiency of the low energy beam.
  • Tube lens 250 acts as a defocusing lens that gradually weakens the focusing effect of deceleration lens 260 in the deceleration mode.
  • tube lens 250 In the deceleration mode of accel-decel column 200 , shown in FIG. 3 , tube lens 250 is charged with a negative voltage so as to form a defocusing lens.
  • acceleration-suppression electrode 210 In the deceleration mode, acceleration-suppression electrode 210 is also charged with a negative voltage via a controller 262 .
  • tube lens 250 is electrically coupled to acceleration-suppression electrode 210 via a switch 254 in the deceleration mode, but this is not necessary. That is, tube lens 250 may be provided with its own power source for more control of potential matching with acceleration-suppression electrode 210 .
  • tube lens 250 As illustrated in FIG. 3 , the application of the negative potential to tube lens 250 creates an electric field between ground electrode 210 and an entrance of tube lens 250 .
  • the electric field has an outwardly vertical component, which causes a reduction in the convergent angle of the ions, and hence, a defocusing of ion beam 104 at the entrance of tube lens 250 as ion beam 104 enters tube lens 250 .
  • Tube lens 250 is configured to be sufficiently long such that the optical defocusing effect occurs within its length, i.e., ion beam 104 can defocus and change shape before it exits tube lens 250 .
  • tube lens 250 is positioned where the focusing action of deceleration lens 260 is the strongest, i.e., just after acceleration-suppression electrode 210 .
  • the voltage on tube lens 250 is controlled by controller 262 (or separate controller if tube lens 250 is not electrically coupled to acceleration-suppression electrode 210 ) so as to regulate the ion beam 104 dimension and angle as it exit
  • tube lens 250 When accel-decel column 200 is in the acceleration mode, tube lens 250 is grounded such that it has no affect on ion beam 104 . In one embodiment, during the acceleration mode, tube lens 250 is electrically coupled to a coupling device 212 , which acts as a ground for tube lens 250 , but this is not necessary.
  • FIG. 4 an alternative embodiment of the invention is shown.
  • This embodiment is substantially similar to that of FIG. 3 , except for the addition of a deceleration-suppression electrode 270 positioned immediately downstream of tube lens 250 .
  • a more negative voltage is applied to acceleration-suppression electrode 210 and deceleration-suppression electrode 270 than is applied to tube lens 250 .
  • the electric fields generated between acceleration-suppression electrode 210 and the entrance of tube lens 250 , and between deceleration-suppression electrode 270 and the exit of tube lens 250 produce electron traps to confine electrons inside the tube lens, which improves space charge neutralization of ion beam 104 inside tube lens 250 .
  • this electron confinement minimizes beam transport losses in analyzer magnet 156 ( FIG. 1 ).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

A method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode are disclosed. The apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column. The tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column. The invention also includes an accel-decel column and ion implanter incorporating the tube lens. An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.

Description

    BACKGROUND OF THE INVENTION
  • 1. Technical Field
  • The present invention relates generally to ion implanters, and more particularly, to a method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter.
  • 2. Related Art
  • Improving productivity of ion implanters that use a low energy beam is a continuing issue in the ion implanter industry. One area of focus is improving beam transport efficiency. In any ion beam, the positively charged ions tend to repel one another, which causes loss of ions and poor beam transport. Referring to FIG. 1, a conventional ion implanter 100 is illustrated. Ion implanter 100 generates and transmits an ion beam 104 to a target 106 in an implant chamber 108. Ion implanter 100 includes a gas flow 140; an ion source 142 including a source magnet 144 and a source bias voltage controller 146; a suppression electrode 148, an extraction electrode 150 and one or more manipulator motors (not shown) for electrodes 148, 150; a filter magnet 151; a filter resolving aperture 152; an acceleration-deceleration column 200; an analyzer magnet 156; a mass slit 160; a pre-scan suppression electrode 162; horizontal scan plates 164; a post-scan suppression electrode 166; a nitrogen (N2) bleed 168; a corrector magnet 170; a limiting aperture 172; and a profiler system 174. Each of the above-described components is monitored by and responsive to system controller 120. Typically, target 106 includes one or more semiconductor wafers mounted to a platen 114.
  • Referring to FIG. 2, ion beam acceleration-deceleration column 200 accelerates or decelerates ion beam 104 prior to mass analysis by analyzer magnet 156 (FIG. 1). Initially, ion beam 104 is formed at filter resolving aperture 202 from a ion source 142 trough extraction electrode 150 and filter magnet 151, which removes most of unselected ions from beam 104 (FIG. 1). Ion beam 104 is initially formed with high energy because it is relatively difficult to obtain a beam with high beam current at low energies from ion source 142 directly. Accordingly, a conventional ion implanter 100 is designed to run at a reasonably high source extraction voltage, for example, greater than 40 kV to give generated ions initial upstream velocity. Acceleration-deceleration column 200 applies different potential gradients that generate electric fields that decelerate (as shown in FIG. 2) or accelerate ion beam 104 depending on its mode as the ions pass through to give the ions their final velocity. Acceleration-deceleration column 200 includes terminal electrodes 204 to receive ion beam 104 into accel-decel column 200. Next, a focus electrode 206 provides an adjustable focusing effect to ion beam 104, which also produces an electron trap to prevent the neutralizing electrons from being removed from the region of the beam-line located before the deceleration region during the deceleration mode. Next, a ground electrode 208 receive ion beam 104 with its final energy. In the acceleration mode (not shown), an electric field generated between terminal electrodes 204 and ground electrode 208 forms an acceleration lens by applying a positive voltage on terminal electrodes 204 to energize and accelerate the positively charged particles of ion beam 104. Acceleration-suppression electrode 210 is biased with a negative voltage that suppresses secondary electrons during the acceleration mode. In the deceleration mode, shown in FIG. 2, an electric field generated between terminal electrodes 204 and ground electrode 208 form a deceleration lens by applying a negative voltage on terminal electrodes 204 to de-energize and decelerate the positively charged particles in ion beam 104.
  • As shown in FIG. 2, as acceleration-deceleration column 200 decelerates ion beam 104 and lowers its energy, it tends to drastically focus ion beam 104. In particular, as the ions leave the deceleration lens, they have a large convergent angle, i.e., they are tending to move inwardly with a large vertical velocity component. The large convergent angle causes ion beam 104 to have a large divergent angle afterwards, i.e., the ion will move outwardly with the same amount of vertical velocity component and thus increases the dispersion problem and reduce the transport efficiency of the low energy beam, i.e., ions are loss to dispersion as the beam exits accel-decel column 200. (Ion beam 104 exits via a coupling device 212, which provides a sliding vacuum seal to the analyzer magnet). The larger the energy change in ion beam 104, the more drastic the focusing and the more drastic the dispersion problem. It should be recognized that while FIG. 2 shows a two-dimensional view of ion beam 104 envelope, the focusing action is dependent on radial position within ion beam 104. That is, the closer to the inner edge of electrode 210, the stronger the focusing effect.
  • In view of the foregoing, there is a need in the art for improved beam transport efficiency relative to an acceleration-deceleration column of an ion implanter.
  • SUMMARY OF THE INVENTION
  • The invention includes a method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode. The apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column. The tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column. The invention also includes an accel-decel column and ion implanter incorporating the tube lens. An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.
  • A first aspect of the invention is directed to an apparatus for weakening a focusing effect of an acceleration-deceleration column for an ion beam in an ion implanter, the apparatus comprising: a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column.
  • A second aspect of the invention is directed to an acceleration-deceleration column for an ion beam in an ion implanter, the acceleration-deceleration column comprising: a deceleration lens for decelerating the ion beam including terminal electrodes and a focus electrode adjacent the terminal electrodes and a ground electrode adjacent the focus electrode; and a tube lens surrounding the ion beam and adjacent to the deceleration lens.
  • A third aspect of the invention is directed to an ion implanter comprising: an ion source for generating an ion beam; an acceleration-deceleration column for accelerating or decelerating the ion beam, the acceleration-deceleration column including a deceleration lens; a tube lens surrounding the ion beam and adjacent to the deceleration lens; an analyzer magnet downstream from the tube lens; and an implant chamber for holding a target to be implanted by the ion beam.
  • A fourth aspect of the invention includes a method of weakening a focusing effect of an acceleration-deceleration column for an ion beam in an ion implanter, the method comprising the steps of: decelerating the ion beam using the acceleration-deceleration column; and transmitting the ion beam through a tube lens having a negative potential during the decelerating step to defocus the ion beam.
  • The foregoing and other features of the invention will be apparent from the following more particular description of embodiments of the invention.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The embodiments of this invention will be described in detail, with reference to the following figures, wherein like designations denote like elements, and wherein:
  • FIG. 1 shows a plan view of a conventional ion implanter.
  • FIG. 2 shows a cross-sectional view of an acceleration-deceleration column of the ion implanter of FIG. 1 in a deceleration mode.
  • FIG. 3 shows a cross-sectional view of the acceleration-deceleration column including a tube lens according to one embodiment of the invention in a deceleration mode.
  • FIG. 4 shows a cross-sectional view of the acceleration-deceleration column including a tube lens according to an alternative embodiment of the invention in a deceleration mode.
  • DETAILED DESCRIPTION OF THE INVENTION
  • With reference to FIG. 3, details of an acceleration-deceleration column 240 according to the invention will now be described. Hereinafter, acceleration-deceleration column 240 will be referred to as “accel-decel column” for brevity. Accel-decel column 240 includes the same structure as a conventional acceleration-deceleration column, except for the addition of an electrostatic tube lens 250 according to the invention. Although not shown of clarity except where necessary, each electrode is coupled to a controllable power source. As illustrated, tube lens 250 is an electrostatic, substantially cylindrical tube surrounding ion beam 104 adjacent to (not necessarily immediately) a deceleration lens 260 formed by terminal electrodes 204, focus electrode 206 and ground electrode 208. Tube lens 250 includes a radially extending mount 252 for mounting it in place in accel-decel column 240. As illustrated in FIG. 3, tube lens 250 does not contact an acceleration-suppression electrode 210 of accel-decel column 200.
  • As described above, accel-decel column 200 has an acceleration mode in which ion beam 104 is energized and accelerated and a deceleration mode (shown) in which ion beam 104 is de-energized and decelerated. In the acceleration mode (not shown), terminal electrodes 204 are charged with a positive voltage such that terminal electrodes 204, focus electrode 206 and ground electrode 208 form an acceleration lens that provide a positive potential gradient through which ion beam 104 passes, which generates an electric field to energize and accelerate the positively charged particles of ion beam 104. Acceleration-suppression electrode 210 is biased with a negative voltage that suppresses secondary electrons during the acceleration mode. In contrast, in the deceleration mode, which is shown in FIG. 2, terminal electrodes 204 are charged with a negative voltage such that terminal electrodes 204, focus electrode 206 and ground electrode 208 form a deceleration lens 260 that provides a negative potential gradient through which ion beam 104 passes, which generates an electric field to de-energize and decelerate the positively charged particles in ion beam 104. The deceleration may be, for example, from an energy greater than 40 kV to less than 40 kV, which represents a low energy beam. As described above, the ions leaving deceleration lens 260 have a large convergent angle, i.e., they are tending to focus or move inwardly. The large convergent angle causes ions to have a large divergent angle afterwards and thus increases the dispersion problem and reduces the transport efficiency of the low energy beam.
  • Tube lens 250 acts as a defocusing lens that gradually weakens the focusing effect of deceleration lens 260 in the deceleration mode. In the deceleration mode of accel-decel column 200, shown in FIG. 3, tube lens 250 is charged with a negative voltage so as to form a defocusing lens. In the deceleration mode, acceleration-suppression electrode 210 is also charged with a negative voltage via a controller 262. Accordingly, in one embodiment, tube lens 250 is electrically coupled to acceleration-suppression electrode 210 via a switch 254 in the deceleration mode, but this is not necessary. That is, tube lens 250 may be provided with its own power source for more control of potential matching with acceleration-suppression electrode 210.
  • As illustrated in FIG. 3, the application of the negative potential to tube lens 250 creates an electric field between ground electrode 210 and an entrance of tube lens 250. The electric field has an outwardly vertical component, which causes a reduction in the convergent angle of the ions, and hence, a defocusing of ion beam 104 at the entrance of tube lens 250 as ion beam 104 enters tube lens 250. Tube lens 250 is configured to be sufficiently long such that the optical defocusing effect occurs within its length, i.e., ion beam 104 can defocus and change shape before it exits tube lens 250. In addition, tube lens 250 is positioned where the focusing action of deceleration lens 260 is the strongest, i.e., just after acceleration-suppression electrode 210. The voltage on tube lens 250 is controlled by controller 262 (or separate controller if tube lens 250 is not electrically coupled to acceleration-suppression electrode 210) so as to regulate the ion beam 104 dimension and angle as it exits tube lens 250.
  • When accel-decel column 200 is in the acceleration mode, tube lens 250 is grounded such that it has no affect on ion beam 104. In one embodiment, during the acceleration mode, tube lens 250 is electrically coupled to a coupling device 212, which acts as a ground for tube lens 250, but this is not necessary.
  • Referring to FIG. 4, an alternative embodiment of the invention is shown. This embodiment is substantially similar to that of FIG. 3, except for the addition of a deceleration-suppression electrode 270 positioned immediately downstream of tube lens 250. In this embodiment, in the deceleration mode, a more negative voltage is applied to acceleration-suppression electrode 210 and deceleration-suppression electrode 270 than is applied to tube lens 250. The electric fields generated between acceleration-suppression electrode 210 and the entrance of tube lens 250, and between deceleration-suppression electrode 270 and the exit of tube lens 250 produce electron traps to confine electrons inside the tube lens, which improves space charge neutralization of ion beam 104 inside tube lens 250. Combined with the defocusing effect of tube lens 250, this electron confinement minimizes beam transport losses in analyzer magnet 156 (FIG. 1).
  • While this invention has been described in conjunction with the specific embodiments outlined above, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the embodiments of the invention as set forth above are intended to be illustrative, not limiting. Various changes may be made without departing from the spirit and scope of the invention as defined in the following claims.

Claims (32)

1. An apparatus for weakening a focusing effect of an acceleration-deceleration column for an ion beam in an ion implanter, the apparatus comprising:
a tube lens surrounding the ion beam and adjacent to a deceleration lens of the acceleration-deceleration column.
2. The apparatus of claim 1, wherein a length of the tube lens is chosen to allow defocusing of the ion beam within its length.
3. The apparatus of claim 1, wherein the acceleration-deceleration column has an acceleration mode in which the ion beam is accelerated and a deceleration mode in which the ion beam is decelerated.
4. The apparatus of claim 3, wherein the tube lens is grounded in the acceleration mode such that the tube lens has no affect on the ion beam.
5. The apparatus of claim 3, wherein the tube lens is charged with a negative voltage in the deceleration mode such that the tube lens acts as a defocusing lens to gradually weaken the focusing effect of the acceleration-deceleration column.
6. The apparatus of claim 5, wherein the tube lens is electrically coupled to an acceleration-suppression electrode of the acceleration-deceleration column in the deceleration mode.
7. The apparatus of claim 1, further comprising an acceleration-suppression electrode positioned immediately upstream of the tube lens and a deceleration-suppression electrode positioned immediately downstream of the tube lens,
wherein, in the deceleration mode, a more negative voltage is applied to the acceleration-suppression electrode and the deceleration-suppression electrode than is applied to the tube lens to confine electrons inside the tube lens.
8. The apparatus of claim 1, wherein the tube lens includes a radially extending mount.
9. The apparatus of claim 1, wherein the deceleration lens includes terminal electrodes, a focus electrode and a ground electrode.
10. An acceleration-deceleration column for an ion beam in an ion implanter, the acceleration-deceleration column comprising:
a deceleration lens for decelerating the ion beam including terminal electrodes, a focus electrode adjacent the terminal electrodes and a ground electrode adjacent the focus electrode; and
a tube lens surrounding the ion beam adjacent to the deceleration lens.
11. The column of claim 10, wherein a length of the tube lens is chosen to allow defocusing of the ion beam within its length.
12. The column of claim 10, wherein the acceleration-deceleration column has an acceleration mode in which the ion beam is accelerated and a deceleration mode in which the ion beam is decelerated.
13. The column of claim 12, wherein the tube lens is grounded in the acceleration mode such that the tube lens has no affect on the ion beam.
14. The column of claim 12, wherein the tube lens is charged with a negative voltage in the deceleration mode such that the tube lens acts as a defocusing lens to gradually weaken the focusing effect of the acceleration-deceleration column.
15. The column of claim 14, wherein the tube lens is electrically coupled to an acceleration-suppression electrode of the acceleration-deceleration column in the deceleration mode.
16. The column of claim 10, further comprising an acceleration-suppression electrode positioned immediately upstream of the tube lens and a deceleration-suppression electrode positioned immediately downstream of the tube lens,
wherein, in the deceleration mode, a more negative voltage is applied to the acceleration-suppression electrode and the deceleration-suppression electrode than is applied to the tube lens to confine electrons inside the tube lens.
17. The column of claim 10, further comprising a coupling device for sealingly coupling to a downstream analyzer magnet.
18. The column of claim 10, wherein the tube lens includes a radially extending mount.
19. An ion implanter comprising:
an ion source for generating an ion beam;
an acceleration-deceleration column for accelerating or decelerating the ion beam, the acceleration-deceleration column including a deceleration lens;
a tube lens surrounding the ion beam and adjacent to the deceleration lens;
an analyzer magnet downstream from the tube lens; and
an implant chamber for holding a target to be implanted by the ion beam.
20. The ion implanter of claim 19, wherein a length of the tube lens is chosen to allow defocusing of the ion beam within its length.
21. The ion implanter of claim 19, wherein the acceleration-deceleration column has an acceleration mode in which the ion beam is accelerated and a deceleration mode in which the ion beam is decelerated.
22. The ion implanter of claim 21, wherein the tube lens is grounded in the acceleration mode such that the tube lens has no affect on the ion beam.
23. The ion implanter of claim 21, wherein the tube lens is charged with a negative voltage in the deceleration mode such that the tube lens acts as a defocusing lens to gradually weaken the focusing effect of the deceleration lens.
24. The ion implanter of claim 23, wherein the tube lens is electrically coupled to an acceleration-suppression electrode of the acceleration-deceleration column in the deceleration mode.
25. The ion implanter of claim 19, further comprising an acceleration-suppression electrode positioned immediately upstream of the tube lens and a deceleration-suppression electrode positioned immediately downstream of the tube lens,
wherein, in the deceleration mode, a more negative voltage is applied to the acceleration-suppression electrode and the deceleration-suppression electrode than is applied to the tube lens to confine electrons inside the tube lens.
26. The ion implanter of claim 19, wherein the tube lens includes a radially extending mount.
27. The ion implanter of claim 19, wherein the tube lens is electrically coupled to an acceleration-suppression electrode of the acceleration-deceleration column in the deceleration mode.
28. A method of weakening a focusing effect of an acceleration-deceleration column for an ion beam in an ion implanter, the method comprising the steps of:
decelerating the ion beam using the acceleration-deceleration column; and
transmitting the ion beam through a tube lens having a negative potential during the decelerating step to defocus the ion beam.
29. The method of claim 28, further comprising the step of electrically coupling the tube lens to an acceleration-suppression electrode of the acceleration-deceleration column during the deceleration step.
30. The method of claim 28, wherein a length of the tube lens is chosen to allow defocusing of the ion beam within its length.
31. The method of claim 28, further comprising the steps of:
accelerating the ion beam using the acceleration-deceleration column; and
transmitting the ion beam through the tube lens, which is grounded, during the accelerating step so as to have no effect on the ion beam.
32. The method of claim 28, further comprising the steps of applying a more negative voltage to an acceleration-suppression electrode positioned immediately upstream of the tube lens and a deceleration-suppression electrode positioned immediately downstream of the tube lens than applied to the tube lens to confine electrons inside the tube lens.
US10/993,346 2004-11-19 2004-11-19 Weakening focusing effect of acceleration-deceleration column of ion implanter Expired - Lifetime US7045799B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US10/993,346 US7045799B1 (en) 2004-11-19 2004-11-19 Weakening focusing effect of acceleration-deceleration column of ion implanter
JP2007543389A JP5276325B2 (en) 2004-11-19 2005-11-18 Reduction of focus effect of acceleration / deceleration column of ion implanter
KR1020077013208A KR101242462B1 (en) 2004-11-19 2005-11-18 Weakening focusing effect of acceleration-deceleration column of ion implanter
KR1020127022472A KR101242463B1 (en) 2004-11-19 2005-11-18 Weakening focusing effect of acceleration-deceleration column of ion implanter
PCT/US2005/042274 WO2006068754A1 (en) 2004-11-19 2005-11-18 Weakening focusing effect of acceleration-decelaration column of ion implanter
CN2005800448394A CN101088138B (en) 2004-11-19 2005-11-18 Weakening focusing effect of acceleration-deceleration column of ion implanter
TW094140581A TWI370486B (en) 2004-11-19 2005-11-18 Weakening focusing effect of acceleration-deceleration column of ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/993,346 US7045799B1 (en) 2004-11-19 2004-11-19 Weakening focusing effect of acceleration-deceleration column of ion implanter

Publications (2)

Publication Number Publication Date
US7045799B1 US7045799B1 (en) 2006-05-16
US20060108543A1 true US20060108543A1 (en) 2006-05-25

Family

ID=36128363

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/993,346 Expired - Lifetime US7045799B1 (en) 2004-11-19 2004-11-19 Weakening focusing effect of acceleration-deceleration column of ion implanter

Country Status (6)

Country Link
US (1) US7045799B1 (en)
JP (1) JP5276325B2 (en)
KR (2) KR101242462B1 (en)
CN (1) CN101088138B (en)
TW (1) TWI370486B (en)
WO (1) WO2006068754A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084582A1 (en) * 2008-10-03 2010-04-08 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
WO2010077418A1 (en) * 2009-01-02 2010-07-08 Varian Semiconductor Equipment Associates Techniques for independently controlling deflection, deceleration, and focus of an ion beam
US8655649B2 (en) 2009-04-03 2014-02-18 Ntt Docomo, Inc. Speech encoding/decoding device
WO2016126518A1 (en) * 2015-02-06 2016-08-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control an ion beam current

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8466431B2 (en) * 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
JP6879663B2 (en) * 2014-12-25 2021-06-02 株式会社日立ハイテクサイエンス Charged particle beam device
US9697988B2 (en) * 2015-10-14 2017-07-04 Advanced Ion Beam Technology, Inc. Ion implantation system and process
US9679745B2 (en) * 2015-10-14 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Controlling an ion beam in a wide beam current operation range
CN117438265B (en) * 2023-11-27 2024-05-07 青岛四方思锐智能技术有限公司 Speed regulation deflection assembly and ion implanter
CN118712039A (en) * 2024-08-29 2024-09-27 青岛四方思锐智能技术有限公司 Reducing focusing assembly, radio frequency accelerating section and ion implanter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766320A (en) * 1985-03-08 1988-08-23 Nissin Electric Company, Ltd. Apparatus for ion implantation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013891A (en) * 1975-12-15 1977-03-22 Ibm Corporation Method for varying the diameter of a beam of charged particles
US4661712A (en) * 1985-05-28 1987-04-28 Varian Associates, Inc. Apparatus for scanning a high current ion beam with a constant angle of incidence
JPH0744027B2 (en) * 1986-04-28 1995-05-15 日新電機株式会社 Ion processing device
JPH0660837A (en) * 1992-08-06 1994-03-04 Nissin Electric Co Ltd Low-energy ion gun
JPH0619252U (en) * 1992-08-18 1994-03-11 日新電機株式会社 Flange integrated ion gun
JPH0836988A (en) * 1994-07-22 1996-02-06 Nissin Electric Co Ltd Ion implanting device
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766320A (en) * 1985-03-08 1988-08-23 Nissin Electric Company, Ltd. Apparatus for ion implantation

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084582A1 (en) * 2008-10-03 2010-04-08 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US8003956B2 (en) * 2008-10-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
WO2010077418A1 (en) * 2009-01-02 2010-07-08 Varian Semiconductor Equipment Associates Techniques for independently controlling deflection, deceleration, and focus of an ion beam
US7888653B2 (en) 2009-01-02 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Techniques for independently controlling deflection, deceleration and focus of an ion beam
TWI463518B (en) * 2009-01-02 2014-12-01 Varian Semiconductor Equipment Device for independently controlling deflection,decleration, and focus of an ion beam, and method forindependently controlling deflection, decleration,and focus of an ion beam
US8655649B2 (en) 2009-04-03 2014-02-18 Ntt Docomo, Inc. Speech encoding/decoding device
US9779744B2 (en) 2009-04-03 2017-10-03 Ntt Docomo, Inc. Speech decoder with high-band generation and temporal envelope shaping
US10366696B2 (en) 2009-04-03 2019-07-30 Ntt Docomo, Inc. Speech decoder with high-band generation and temporal envelope shaping
WO2016126518A1 (en) * 2015-02-06 2016-08-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control an ion beam current
TWI679668B (en) * 2015-02-06 2019-12-11 美商瓦里安半導體設備公司 Apparatus and method to control an ion beam current for treating substrate and ion implanter

Also Published As

Publication number Publication date
KR20070086073A (en) 2007-08-27
US7045799B1 (en) 2006-05-16
JP5276325B2 (en) 2013-08-28
JP2008521206A (en) 2008-06-19
TW200620429A (en) 2006-06-16
CN101088138A (en) 2007-12-12
TWI370486B (en) 2012-08-11
KR101242463B1 (en) 2013-03-12
CN101088138B (en) 2011-10-26
KR101242462B1 (en) 2013-03-12
WO2006068754A1 (en) 2006-06-29
KR20120114382A (en) 2012-10-16

Similar Documents

Publication Publication Date Title
JP5120598B2 (en) Acceleration / deceleration gap for deflection
JP5689415B2 (en) Magnetic energy filter after decel in ion implantation system
KR100855135B1 (en) Electrostatic trap for particles entrained in an ion beam
US9679739B2 (en) Combined electrostatic lens system for ion implantation
KR101992992B1 (en) Beam line design to reduce energy contamination
US6998625B1 (en) Ion implanter having two-stage deceleration beamline
US6489622B1 (en) Apparatus for decelerating ion beams with minimal energy contamination
US6326631B1 (en) Ion implantation device arranged to select neutral ions from the ion beam
JP2002517885A (en) Acceleration and analysis architecture for ion implanters
US7022984B1 (en) Biased electrostatic deflector
KR100855134B1 (en) System and method for removing particles entrained in an ion beam
JP5224014B2 (en) System and method for removing contaminant particles from an ion beam
US7045799B1 (en) Weakening focusing effect of acceleration-deceleration column of ion implanter
KR20120049883A (en) Adjustable louvered plasma electron flood enclosure
JPH11329316A (en) Inclined deceleration device and its ion beam forming method
US7459692B2 (en) Electron confinement inside magnet of ion implanter

Legal Events

Date Code Title Description
AS Assignment

Owner name: VARIAN SEMICONDUTOR EQUP, MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHANG, SHENGWU;OLSON, JOSEPH P.;ANDERSON, DONALD;AND OTHERS;REEL/FRAME:016701/0124;SIGNING DATES FROM 20050608 TO 20050609

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553)

Year of fee payment: 12