TWM647640U - In-chamber dust collection device - Google Patents
In-chamber dust collection device Download PDFInfo
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- TWM647640U TWM647640U TW112208279U TW112208279U TWM647640U TW M647640 U TWM647640 U TW M647640U TW 112208279 U TW112208279 U TW 112208279U TW 112208279 U TW112208279 U TW 112208279U TW M647640 U TWM647640 U TW M647640U
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- side wall
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- reaction chamber
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- 239000000428 dust Substances 0.000 title claims abstract description 22
- 230000004308 accommodation Effects 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- Filtering Of Dispersed Particles In Gases (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
一種腔體內集塵裝置,包含一擋件、一第一導流板以及一第二導流板。擋件包含一第一側壁、一第二側壁以及一底部;其中,第一側壁朝向容置空間上方延伸,並且用以連接於反應腔體;第二側壁平行第一側壁,朝向容置空間上方延伸,並且第二側壁的內側形成一開口,用以供承載盤進入;底部連接於第一側壁與第二側壁,而形成一環狀溝槽區域,且底部開設有至少一導流孔。第一導流板固定於第一側壁,並且朝向底部傾斜延伸;其中,第一導流板位於至少一導流孔上方。第二導流板固定於第二側壁,位於第一導流板上方,並且朝向底部傾斜延伸。A dust collection device in a cavity includes a blocking member, a first guide plate and a second guide plate. The blocker includes a first side wall, a second side wall and a bottom; wherein, the first side wall extends toward the top of the accommodation space and is used to connect to the reaction chamber; the second side wall is parallel to the first side wall and faces above the accommodation space. Extend, and an opening is formed on the inside of the second side wall for the carrying tray to enter; the bottom is connected to the first side wall and the second side wall to form an annular groove area, and at least one guide hole is opened at the bottom. The first guide plate is fixed to the first side wall and extends obliquely toward the bottom; wherein, the first guide plate is located above at least one guide hole. The second deflector is fixed to the second side wall, is located above the first deflector, and extends obliquely toward the bottom.
Description
本新型有關於鍍膜設備與鍍膜方法,特別是關於一種。The present invention relates to coating equipment and coating methods, in particular to one kind.
如圖1所示,在執行濺鍍薄膜的鍍膜設備1中,構成薄膜材料的粒子是由靶材2提供,靶材2經過高能氣體離子撞擊或其他方式產生原子束濺鍍位於下方的晶圓基板。但是,這些靶材2的原子,例如用於形成碳薄膜的碳原子,雖然可以良好附著於晶圓基板而成長為碳薄膜,但接觸遮檔環3、擋件4、遮擋壁5的碳原子所形成的靶材微粒並無法良好的附著,而形成在空氣中漂浮的靶材微粒。或是,碳原子於前述遮檔環3、擋件4、遮擋壁5上沉積成為碳層之後,因為附著力不佳最後脫落,使得後續保養鍍膜設備1時,必須耗時間清理脫落在反應腔體6內的碳層。空氣中漂浮的靶材微粒也會調落在晶圓基板表面,影響晶圓基板上的薄膜成長,而影響薄膜品質。As shown in Figure 1, in the coating equipment 1 that performs sputtering of thin films, the particles constituting the thin film material are provided by the
傳統上減少靶材微粒沉積是於反應腔體6下部設置排氣口7,連接真空泵浦8持續抽氣。而惰性氣體等工作氣體是持續地通入反應腔體6上部的反應區6a,再穿過環繞承載盤9的擋件4到達反應腔體110下部,最後由排氣口7抽離。藉由真空泵浦8持續抽吸工作氣體,以氣流帶動漂浮的碳微粒離開反應腔體6。Traditionally, to reduce target particle deposition, an
但是,現有的遮蓋環3、擋件4之間形成的氣流通到路徑彎折,容易在反應腔體6中形成迴流現象,造成漂浮的靶材微粒迴流至晶圓基板上方,最後附著於薄膜而影響薄膜品質,或是污染反應腔體6而增加清理反應腔體6所需要的時間。However, the existing air flow path formed between the covering
鑑於上述技術問題,本新型提出一種腔體內集塵裝置,藉以移除漂浮的靶材微粒,避免靶材微粒污染腔體以及鍍膜。In view of the above technical problems, the present invention proposes a dust collection device in the cavity to remove floating target particles and prevent target particles from contaminating the cavity and coating.
本新型提出一種腔體內集塵裝置,包含一擋件、一第一導流板以及一第二導流板。擋件包含一第一側壁、一第二側壁以及一底部;其中,第一側壁朝向容置空間上方延伸,並且用以連接於反應腔體;第二側壁平行第一側壁,朝向容置空間上方延伸,並且第二側壁的內側形成一開口,用以供承載盤進入;底部連接於第一側壁與第二側壁,而形成一環狀溝槽區域,且底部開設有至少一導流孔。第一導流板固定於第一側壁,並且朝向底部傾斜延伸;其中,第一導流板位於至少一導流孔上方。第二導流板固定於第二側壁,位於第一導流板上方,並且朝向底部傾斜延伸。The new model proposes a dust collection device in a cavity, which includes a baffle, a first guide plate and a second guide plate. The blocker includes a first side wall, a second side wall and a bottom; wherein, the first side wall extends toward the top of the accommodation space and is used to connect to the reaction chamber; the second side wall is parallel to the first side wall and faces above the accommodation space. Extend, and an opening is formed on the inside of the second side wall for the carrying tray to enter; the bottom is connected to the first side wall and the second side wall to form an annular groove area, and at least one guide hole is opened at the bottom. The first guide plate is fixed to the first side wall and extends obliquely toward the bottom; wherein, the first guide plate is located above at least one guide hole. The second deflector is fixed to the second side wall, is located above the first deflector, and extends obliquely toward the bottom.
在至少一實施例中,第一側壁與第二側壁分別是環形側壁。In at least one embodiment, the first side wall and the second side wall are respectively annular side walls.
在至少一實施例中,腔體內集塵裝置更包含一遮蓋環,設置於擋件之上。In at least one embodiment, the dust collecting device in the cavity further includes a covering ring, which is disposed on the blocking member.
在至少一實施例中,遮蓋環具有一水平延伸部以及一垂直延伸部。水平延伸部環繞一窗口設置,並且水平延伸部是設置於第二側壁的頂部邊緣。垂直延伸部垂直地延伸於水平延伸部邊緣,並且位於第一側壁與第二側壁之間。In at least one embodiment, the cover ring has a horizontal extension and a vertical extension. The horizontal extension part is arranged around a window, and the horizontal extension part is arranged on the top edge of the second side wall. The vertical extension extends vertically from the edge of the horizontal extension and is located between the first side wall and the second side wall.
在至少一實施例中,垂直延伸部朝向底部延伸而不接觸底部。In at least one embodiment, the vertical extension extends toward the bottom without contacting the bottom.
在至少一實施例中,水平延伸部由上方遮蔽了環狀溝槽區域的局部。In at least one embodiment, the horizontal extension partially obscures the annular groove area from above.
在至少一實施例中,腔體內集塵裝置更包含一第一連接部以及一第二連接部;第一連接部固定於第一側壁,第一導流板延伸於第一連接部,而間接地固定於第一側壁;第二連接部固定於第二側壁,第二導流板延伸於第二連接部,而間接地固定於第二側壁。In at least one embodiment, the dust collection device in the cavity further includes a first connection part and a second connection part; the first connection part is fixed on the first side wall, and the first baffle extends from the first connection part, and indirectly The second connecting part is fixed on the second side wall, and the second baffle extends on the second connecting part and is indirectly fixed on the second side wall.
在至少一實施例中,第一導流板在一徑向方向上局部地遮蔽至少一導流孔。In at least one embodiment, the first guide plate partially covers at least one guide hole in a radial direction.
在至少一實施例中,第二導流板由上方局部地遮擋第一導流板。In at least one embodiment, the second deflector partially blocks the first deflector from above.
通過上述技術手段,本新型可以充分地移除在反應腔體中漂浮的靶材微粒,避免靶材微粒或是影響薄膜成長品質,同時減少靶材材料於設備中的沉積,延長設備的保養週期,也縮短保養設備需要的時間。Through the above technical means, this new model can fully remove target particles floating in the reaction chamber, preventing target particles from affecting the film growth quality, while reducing the deposition of target materials in the equipment, and extending the maintenance cycle of the equipment. , and also shorten the time required to maintain equipment.
請參閱圖2與圖3所示,為本新型實施例所揭露的一種腔體內集塵裝置140以及具有腔體內集塵裝置140的鍍膜設備100,用於執行一種腔體內微粒去除方法。Please refer to FIGS. 2 and 3 , which disclose a
如圖2所示,鍍膜設備100具有一反應腔體110、一靶材120、一承載盤130以及腔體內集塵裝置140。As shown in FIG. 2 , the
如圖2所示,反應腔體110具有一容置空間110a,用以容置承載盤130以及靶材120。承載盤130用以承載至少一基板,並且靶材120設置容置空間110a上方並且朝向承載盤130以及承載盤130所承載的基板。反應腔體110的上方開設一設置開口111,設置開口111連接反應腔體110的外部,且靶材120固定於設置開口111中,而使得靶材120及反應腔體110構成封閉的容置空間110a。As shown in FIG. 2 , the
如圖2所示,承載盤130連接於一線性致動器150,線性致動器150用於驅動承載盤130,使得承載盤130可相對於靶材120位移,而改變承載盤130與靶材120之間的距離。線性致動器150可為但不限定於油壓致動器、氣壓致動器、線性導螺桿致動器等。基板可透過機械手臂或拾取裝置移動至承載盤130上,透過線性致動器150的驅動,承載盤130可帶動其所承載的基板朝靶材120的方向靠近,以減少承載盤130承載的基板與靶材120之間的距離,並對基板進行薄膜沉積。As shown in FIG. 2 , the
如圖1所示,本新型的鍍膜設備100可以是濺鍍設備,在對基板濺鍍薄膜時對容置空間110a施加電場,使得容置空間110a內的惰性氣體原子受到電子撞擊而形成帶電的氣體離子。在靶材120及承載盤130上施加偏壓,使得氣體離子撞擊靶材120,並產生由靶材120形成的原子。被撞擊產生的靶材原子會受到承載盤130上偏壓的吸引形成原子束並沉積在基板表面,以在基板的表面上形成薄膜。但未落在的原子,例如落在反應腔體110內壁的原子,將無法有效附著,而形成漂浮的靶材微粒,或是形成不穩定的薄膜而脫落。因此,漂浮的靶材微粒,必須能夠被迅速收集並且排出容置空間110a之外。理想的方式是讓漂浮的靶材微粒隨同被通入容置空間110a的惰性氣體排除,以避免靶材微粒落在基板表面影響薄膜品質,或在鍍膜設備100中的其他未沉積而形成污染物,而縮短必須清潔鍍膜設備100的週期,並且延長清潔鍍膜設備100所需要的時間。。As shown in Figure 1, the
如圖2與圖3所示,腔體內集塵裝置140包含一擋件143、一遮蓋環144以及一導流組件140a。As shown in Figures 2 and 3, the
如圖2、圖3與圖4所示,擋件143為環狀結構,包含一第一側壁1431、一第二側壁1432以及一底部1433。擋件143的材質可以是金屬或陶瓷材料,但不排除使用其他材料。第一側壁1431是一環形側壁,朝向容置空間110a上方延伸,並且用以連接於反應腔體110。第二側壁1432也是一環形側壁,平行於第一側壁1431,且朝向容置空間110a上方延伸。第二側壁1432的內側形成一開口143a。承載盤130可朝靶材120的方向靠近,並接觸擋件143或進入擋件143的開口143a,使得反應腔體110、承載盤130、靶材120及擋件143會在容置空間110a內區隔出一反應空間110b,並在反應空間110b內對承載盤130上的基板進行薄膜沉積。As shown in FIGS. 2 , 3 and 4 , the
如圖2、圖3與圖4所示,底部1433連接於第一側壁1431與第二側壁1432,而在第一側壁1431、底部1433與第二側壁1432之間定義一環狀溝槽區域。底部1433開設有一或多個弧形、圓形、橢圓形或方形的導流孔143b,以連通底部1433的兩側。As shown in FIGS. 2 , 3 and 4 , the
如圖2與圖3所示,遮蓋環144設置於擋件143之上,且遮蓋環144具有一水平延伸部1441以及一垂直延伸部1442。水平延伸部1441環繞一窗口144a設置,並且水平延伸部1441是設置於第二側壁1432的頂部邊緣,而使得遮蓋環144設置於擋件143之上。水平延伸部1441與第二側壁1432之間互相垂直設置。當承載盤130接觸擋件143或進入擋件143的開口143a,承載盤130也會位於窗口144a中。同時,水平延伸部1441也朝向開口143a延伸設置,使得水平延伸部1441於承載盤130的邊緣之間的間隙盡可能地縮短,以對承載盤130的側壁發揮遮擋效果。As shown in FIGS. 2 and 3 , the
如圖2與圖3所示,垂直延伸部1442垂直地延伸於水平延伸部1441的外側邊緣,並且位於第一側壁1431與第二側壁1432之間。垂直延伸部1442朝向底部1433延伸但不接觸底部1433。As shown in FIGS. 2 and 3 , the
如圖2與圖3所示,水平延伸部1441由上方遮蔽了第二側壁1432以及環狀溝槽區域的局部。進一步言,從剖面圖觀察,環狀溝槽區域被垂直延伸部1442區分為內側部分以及外側部分。As shown in FIGS. 2 and 3 , the
如圖2、圖3、圖5與圖6所示,導流組件140a包含一第一導流件141以及一第二導流件142。導流組件140a可以是由金屬、陶瓷材料或高分子材料所製成,但不排除其他材料。第一導流件141以及第二導流件142可以是各自獨立的元件,也可以透過連結形成單一組件。As shown in FIGS. 2 , 3 , 5 and 6 , the
如圖3、圖5與圖6所示,第一導流件141可以是環狀結構,並且包含一第一連接部1411以及一第一導流板1412。第一連接部1411固定於第一側壁1431。第一導流板1412為環狀結構,延伸於第一連接部1411,使得第一導流板1412透過第一連接部1411間接地固定於第一側壁1431。在不同實施例中,第一導流板1412也可以直接地固定於第一側壁1431。第一導流板1412為環狀結構,並且朝向底部1433傾斜延伸,但不接觸底部1433及第二側壁1432。特別是,第一導流板1412前側邊緣延伸至水平延伸部1441的下方,而局部地位於環狀溝槽區域的內側部分。As shown in FIG. 3 , FIG. 5 and FIG. 6 , the
如圖3、圖5與圖6所示,第一導流板1412位於導流孔143b上方,並且在徑向方向上局部地遮蔽導流孔143b,使得氣流可於第一導流板1412的上表面受到導引後通過導流孔143b,而將漂浮的靶材微粒帶到擋件143下方,再由反應腔體110的一排氣口112排出。As shown in FIGS. 3 , 5 and 6 , the
如圖3、圖5與圖6所示,第二導流件142可以是環狀結構,並且包含一第二連接部1421以及一第二導流板1422。第二連接部1421固定於第二側壁1432。第二導流板1422為環狀結構,延伸於第二連接部1421,使得第二導流板1422透過第二連接部1421間接地固定於第二側壁1432。在不同實施例中,第二導流板1422也可以直接地固定於第二側壁1432。第二導流板1422為環狀結構,位於第一導流板1412上方,並且朝向底部1433傾斜延伸,但第二導流板1422不接觸底部1433及第一側壁1431。特別是,第二導流板1422前側邊緣大致上位於垂直延伸部1442上方,且稍微由上方遮擋第一導流板1412。第二導流板1422、垂直延伸部1442與第二側壁1432之間形成一半封閉區域,藉由第二導流板1422的向下傾斜,可以避免朝向導流孔143b的氣流迴流至此一半封閉區域,讓氣流的流動更為順利。As shown in FIG. 3 , FIG. 5 and FIG. 6 , the
如圖2、圖3與圖6所示,惰性氣體或其他應用於濺鍍的工作氣體由反應腔體110的一進氣口113注入反應腔體110的反應空間110b之後,可朝向擋件143的環狀溝槽區域流動,經由第一導流板1412的引導穿過導流孔143b後,由排氣口112排出。持續注入以及排出的氣體流動可收集反應腔體110中漂浮的靶材微粒。由於氣流的流動更為順利,同時,第一導流板1412以及第二導流板1422的傾斜配置,也避免了氣流發生迴流現象,從而降低了漂浮的靶材微粒污染基板表面,而影響薄膜成長品質。As shown in FIGS. 2 , 3 and 6 , after the inert gas or other working gas used for sputtering is injected into the
請參閱圖7所示,一種腔體內微粒去除方法,用於在一反應腔體110中去除微粒。Please refer to FIG. 7 , a method for removing particles in a cavity is used to remove particles in a
如圖2、圖3與圖7所示,基於方法係先提供一擋件143,如步驟S110所示。如圖2與圖3所示,擋件143包含一第一側壁1431、一第二側壁1432以及一底部1433,第二側壁1432平行第一側壁1431,且第一側壁1431與第二側壁1432分別是環形側壁。底部1433連接於第一側壁1431與第二側壁1432,而形成一環狀溝槽區域。底部1433開設有至少一導流孔143b,並且第二側壁1432的內側形成一開口143a,用以供承載盤130進入。As shown in Figures 2, 3 and 7, based on the method, a
如圖2、圖3與圖7所示,接著,以第一側壁1431朝向容置空間110a上方延伸並連接於反應腔體110,而固定擋件143於反應腔體110中,如步驟S120所示。As shown in FIGS. 2 , 3 and 7 , then, the
如圖2、圖3與圖7所示,固定一第一導流板1412於第一側壁1431,並且第一導流板1412朝向底部1433傾斜延伸,使第一導流板1412位於至少一導流孔143b上方,如步驟S130所示。如圖2與圖3所示,第一導流板1412是局部地遮蔽至少一導流孔143b。如圖2與圖3所示,固定第一導流板1412的是提供一第一連接部1411,第一連接部1411固定於第一側壁1431,且第一導流板1412延伸於第一連接部1411,而間接地固定第一導流板1412於第一側壁1431。As shown in Figures 2, 3 and 7, a
如圖2、圖3與圖7所示,固定一第二導流板1422於第二側壁1432,使第二導流板1422位於第一導流板1412上方,並且第二導流板1422朝向底部1433傾斜延伸,而不接觸底部1433與第一側壁1431,如步驟S140所示。如圖2與圖3所示,第二導流板1422可進一步延伸,而由上方局部地遮擋第一導流板1412。如圖2與圖3所示,固定第二導流板1422的是提供一第二連接部1421,第二連接部1421固定於第二側壁1432,且第二導流板1422延伸於第二連接部1421,而間接地固定第二導流板1422於第二側壁1432。As shown in Figure 2, Figure 3 and Figure 7, a
如圖2、圖3與圖7所示,於步驟S140之後,更可包含一步驟,設置一遮蓋環144於擋件143之上,如步驟S150所示。前述的遮蓋環144具有一水平延伸部1441以及一垂直延伸部1442。水平延伸部1441環繞一窗口設置,水平延伸部1441是設置於第二側壁1432的頂部邊緣,並且水平延伸部1441由上方遮蔽了環狀溝槽區域的局部。垂直延伸部1442垂直地延伸於水平延伸部1441邊緣,垂直延伸部1442位於第一側壁1431與第二側壁1432之間,垂直延伸部1442朝向底部1433延伸而不接觸底部1433並且。步驟S150的執行次序不限於在步驟S140之後,也可以在步驟S110後。As shown in FIG. 2 , FIG. 3 and FIG. 7 , after step S140 , a step may be further included to dispose a
通過上述技術手段,本新型可以充分地移除在反應腔體110中漂浮的靶材微粒,避免靶材微粒或是影響薄膜成長品質,同時減少靶材120材料於設備中的沉積,延長設備的保養週期,也縮短保養設備需要的時間。Through the above technical means, the present invention can fully remove the target particles floating in the
1:鍍膜設備
2:靶材
3:遮檔環
4:擋件
5:遮擋壁
6:反應腔體
7:排氣口
8:真空泵浦
100:鍍膜設備
110:反應腔體
110a:容置空間
110b:反應空間
111:設置開口
112:排氣口
113:進氣口
120:靶材
130:承載盤
140:腔體內集塵裝置
140a:導流組件
141:第一導流件
1411:第一連接部
1412:第一導流板
142:第二導流件
1421:第二連接部
1422:第二導流板
143:擋件
143a:開口
143b:導流孔
1431:第一側壁
1432:第二側壁
1433:底部
144:遮蓋環
1441:水平延伸部
1442:垂直延伸部
150:線性致動器
1: Coating equipment
2:Target
3: Blocking ring
4:Block
5:Blocking wall
6: Reaction chamber
7:Exhaust port
8: Vacuum pump
100:Coating equipment
110:
圖1是先前技術中,鍍膜設備的剖面示意圖。Figure 1 is a schematic cross-sectional view of coating equipment in the prior art.
圖2是本新型實施例中,鍍膜設備的剖面示意圖。Figure 2 is a schematic cross-sectional view of the coating equipment in the embodiment of the present invention.
圖3是圖2中,局部區域的放大示意圖。Figure 3 is an enlarged schematic diagram of a partial area in Figure 2.
圖4是本新型實施例中,擋件的俯視圖。Figure 4 is a top view of the stopper in the embodiment of the present invention.
圖5是本新型實施例中,第一導流件與擋件的俯視圖。Figure 5 is a top view of the first flow guide member and the blocking member in the embodiment of the present invention.
圖6是本新型實施例中,腔體內集塵裝置的局部立體剖面圖。Figure 6 is a partial perspective cross-sectional view of the dust collecting device in the cavity in the embodiment of the present invention.
圖7是本新型實施例中,腔體內微粒去除方法的流程圖。Figure 7 is a flow chart of a method for removing particles in a cavity in an embodiment of the present invention.
141:第一導流件 141: First guide piece
1411:第一連接部 1411: First connection part
1412:第一導流板 1412:First deflector
142:第二導流件 142:Second guide piece
1421:第二連接部 1421: Second connection part
1422:第二導流板 1422: Second deflector
1441:水平延伸部 1441: Horizontal extension
1442:垂直延伸部 1442:Vertical extension
Claims (9)
Priority Applications (1)
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TW112208279U TWM647640U (en) | 2023-08-04 | 2023-08-04 | In-chamber dust collection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW112208279U TWM647640U (en) | 2023-08-04 | 2023-08-04 | In-chamber dust collection device |
Publications (1)
Publication Number | Publication Date |
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TWM647640U true TWM647640U (en) | 2023-10-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW112208279U TWM647640U (en) | 2023-08-04 | 2023-08-04 | In-chamber dust collection device |
Country Status (1)
Country | Link |
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2023
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