TWM593657U - Thin film resistor element - Google Patents

Abstract

A thin film resistor element is provided with a tantalum nitride (TaN) layer on an upper surface of a substrate, a tantalum pentoxide (Ta ₂O ₅) layer disposed on the tantalum nitride layer, and two electrode layers separately disposed on the tantalum pentoxide layer or on both ends of the tantalum nitride layer and the tantalum pentoxide layer. The thin film resistor element of the present creation can reduce the oxidation rate of the resistor layer to maintain a constant resistance value at high temperatures generated during use.

Description

Thin film resistance element

This creation is about a thin-film resistance element, especially a high-temperature-resistant thin-film resistance element.

Generally, when the thin film resistance element is used at a high temperature, or under the action of high temperature due to long-term use, the resistance layer in the resistance element will be oxidized and the resistance will fail.

Considering that most electronic devices are currently in operation, the high temperature generated by long-term operation is likely to cause damage to the resistance element. In addition to the use of heat dissipation elements, there is also a need for high temperature resistance resistance elements themselves. Solutions for high temperature resistive components.

In order to achieve the above purpose, the present invention provides a thin-film resistance element, which can maintain the resistance function when used at high temperature.

A thin film resistive element, a tantalum nitride (TaN) layer is provided on the upper surface of a substrate, a tantalum pentoxide (Ta ₂ O ₅ ) layer substantially covers the tantalum nitride layer, and two electrode layers are provided separately The two ends of the tantalum nitride layer and the tantalum pentoxide layer or on the tantalum pentoxide layer are connected to the tantalum nitride layer and the tantalum pentoxide layer.

The following is a detailed description with specific examples and accompanying drawings, so that it is easier to understand the purpose, technical content, characteristics and effects of the creation.

In the following, each embodiment of the creation will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, this creation can also be widely implemented in other embodiments. The easy replacement, modification, and equivalent changes of any of the described embodiments are included in the scope of this creation, and the scope of patent application is quasi. In the description of the specification, in order to allow the reader to have a more complete understanding of this creation, many specific details are provided; however, this creation may still be implemented on the premise that some or all of the specific details are omitted. In addition, well-known steps or elements are not described in detail to avoid unnecessary restrictions on the creation. The same or similar elements in the drawings will be represented by the same or similar symbols. It is important to note that the drawings are for illustrative purposes only, and do not represent the actual size or number of components. Some details may not be fully drawn for simplicity.

Please refer to FIG. 1, which is a schematic side cross-sectional view of a thin-film resistance element according to an embodiment of the present invention. In this embodiment, a thin film resistance element 1 includes a substrate 11, a tantalum nitride layer 13 as a resistance layer, a tantalum pentoxide layer 14 as a transition metal layer and two electrode layers 12.

The tantalum nitride layer 13 substantially covers the upper surface of the substrate 11 and the tantalum pentoxide layer 14 substantially covers the tantalum nitride layer, wherein the tantalum nitride layer 13 and the tantalum pentoxide layer 14 can be in the same reaction chamber Formed by lamination, sputtering, electroplating, evaporation or printing. The thickness of the tantalum pentoxide layer 14 is 50-200 nanometers (nm).

The two-electrode layer 12 is separately connected to both ends of the tantalum nitride layer and the tantalum pentoxide layer 14, wherein the two-electrode layer 12 is overlapped on the tantalum pentoxide layer 14, as shown in FIG. In another embodiment, the two electrode layers are disposed on the opposite ends of the tantalum nitride layer 13 and the tantalum pentoxide layer 14 in a contact (non-overlapping) manner as shown in FIG. 3. Understandably, the two electrode layers 12 may partially overlap (not shown) on the tantalum pentoxide layer 14 and the tantalum nitride layer 13, and in the above embodiments, the two electrode layers 12 and the tantalum pentoxide layer 14 and The tantalum nitride layer 13 is turned on.

2 and FIG. 3, in this embodiment, the same device arrangement is not repeated, wherein the two electrode layers 12 can each extend along the side of the substrate 11 to the lower surface of the substrate 11, meaning the upper surface of the substrate The positive electrode is connected to the back electrode on the lower surface of the substrate.

The substrate 11 used in this creation may be a precision ceramic substrate such as aluminum oxide, aluminum nitride, or other metal oxide materials. The substrate has good heat dissipation properties, but may also be other types of substrates. The substrate 11 is generally arranged in a rectangular shape, and may have other suitable shapes.

In the above embodiment, a protective layer 15 may be further covered on the tantalum pentoxide layer 14, and the two electrode layers 12 are exposed from the protective layer 15.

Through the high-temperature storage test, the thin film resistance element of this creation contains a tantalum pentoxide layer as compared with the general thin film resistance element, which can be used as a barrier layer for the tantalum nitride layer to reduce the oxidation rate of the tantalum nitride layer at a temperature of 155℃ After 1,000 hours of use, the resistance change rate of the thin film resistance element of this creation is still less than 0.1%, which has a more stable resistance value performance. Table 1

In summary, the thin film resistance element of this creation is covered with a tantalum pentoxide layer on the tantalum nitride layer, which can reduce the oxidation rate of the tantalum nitride layer under the high temperature generated during use to maintain a constant resistance value.

The above-mentioned embodiments are only to illustrate the technical ideas and characteristics of this creation, and its purpose is to enable those who are familiar with this skill to understand and implement the content of this creation, but should not limit the patent scope of this creation, That is to say, the equal changes or modifications made by Dafan in accordance with the spirit of this creation should still be covered by the patent scope of this creation.

10: Thin film resistance element 11: substrate 12: electrode layer 13: Tantalum nitride layer 14: Tantalum pentoxide layer 15: protective layer

FIG. 1 is a schematic side cross-sectional view of an embodiment of a thin film resistor element.

FIG. 2 is a schematic side cross-sectional view of another embodiment of a thin film resistance element.

FIG. 3 is a schematic side cross-sectional view of a thin film resistance element according to yet another embodiment of the invention.

10: Thin film resistance element

11: substrate

12: electrode layer

13: Tantalum nitride layer

14: Tantalum pentoxide layer

15: protective layer

Claims (6)

A thin-film resistance element, including: A substrate A tantalum nitride layer is provided on the upper surface of the substrate; A tantalum pentoxide layer substantially covers the tantalum nitride layer; and The two electrode layers are separately connected to both ends of the tantalum nitride layer and the tantalum pentoxide layer, and are electrically connected to the tantalum nitride layer and the tantalum pentoxide layer. The thin-film resistance element as described in item 1 of the scope of the patent application further includes a protective layer disposed on the tantalum pentoxide layer, and the two electrode layers are exposed from the protective layer. The thin-film resistance element as described in item 1 of the patent application range, wherein the two-electrode layer extends along the side of the substrate to the lower surface of the substrate. The thin-film resistance element as described in item 1 of the patent application range, wherein the two electrode layers overlap, do not overlap, or partially overlap both ends of the tantalum nitride layer and the tantalum pentoxide layer. As in the thin-film resistance element described in item 1 of the patent application range, the thickness of the tantalum pentoxide layer is 50-200 nanometers (nm). As in the thin-film resistance element described in item 1 of the patent application scope, the tantalum nitride layer and the tantalum pentoxide layer are formed by a bonding, sputtering, or printing process.

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