TWM591709U - CSP light emitting diode packaging device - Google Patents
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Abstract
本創作有關於一種CSP發光二極體封裝裝置,包含:發光二極體晶粒,第一磷光介質層,係至少包含具有第一磷光粉層之第一封裝膠體;導電層;第二磷光介質層,係至少包含具有一第二磷光粉層之第二封裝膠體以及配合使用之基板包含電極層、佈線、錫膏層以及絕緣層。本創作將導線整合成LED結構內之導電層,以減少打線時所需空間及解決導線脆弱而容易斷裂問題,進而提升產品良率。This creation relates to a CSP light-emitting diode packaging device, including: light-emitting diode crystal grains, a first phosphorescent medium layer, at least including a first phosphor with a first phosphor powder layer; a conductive layer; a second phosphorescent medium The layer includes at least a second encapsulant with a second phosphor layer and a matching substrate including an electrode layer, wiring, a solder paste layer and an insulating layer. In this creation, the wires are integrated into the conductive layer in the LED structure to reduce the space required for wire bonding and to solve the problem that the wires are fragile and easily broken, thereby improving product yield.
Description
本創作係有關於一種CSP發光二極體封裝裝置,藉由發光二極體晶粒、第一磷光介質層、導電層、第二磷光介質層、基板、佈線、錫膏層以及絕緣層,藉由將導線整合成LED結構內之導電層,減少打線時所需一定之空間,不僅解決因打線所造成良品率的問題,更可縮小整體CSP發光二極體封裝裝置體積。This creation relates to a CSP light-emitting diode packaging device. The light-emitting diode die, the first phosphor dielectric layer, the conductive layer, the second phosphor dielectric layer, the substrate, the wiring, the solder paste layer and the insulating layer By integrating the wires into the conductive layer in the LED structure, a certain amount of space is required for wire bonding, which not only solves the yield problem caused by wire bonding, but also reduces the size of the overall CSP light-emitting diode packaging device.
近幾年來,拜科技的快速發展所賜,白光發光二極體的出現逐漸取代傳統的白熾電燈泡與日光燈,而白光發光二極體本身具有的體積小、熱輻射少、耗電量低、使用壽命長等優點,同時解決傳統的白熾電燈泡耗電多且容易因高溫而碎裂的問題,而近幾年來,由於綠色能源與環保議題不斷升溫,白光發光二極體可回收、無汙染、易開發成輕薄短小的產品等優勢,白光發光二極體更因此成為世界廣泛使用的照明裝置之一。In recent years, thanks to the rapid development of technology, the emergence of white light-emitting diodes has gradually replaced traditional incandescent light bulbs and fluorescent lamps. White light-emitting diodes have small size, less heat radiation, low power consumption, and use. Long life and other advantages, while solving the problem of traditional incandescent light bulbs that consume a lot of power and are easily broken due to high temperature. In recent years, due to the continuous rise of green energy and environmental protection issues, white light-emitting diodes are recyclable, pollution-free, and easy Developed into light, thin and short products, the white light-emitting diode has become one of the most widely used lighting devices in the world.
如第1圖與第2圖所示,習知技術的發光二極體係在一藍色發光晶片(A)底部固設有一層含有相對應的一紅色磷光劑(C)之一第一膠體(D),以及在該藍色發光晶片(A)頂部固設有一層含有相對應的一綠色磷光劑(B)之一第二膠體(E),而成為用以製造白色多波長發光二極體之晶粒單體,以該第一膠體(D)做為塗佈一固晶膠(F)的部位,將晶粒單體定置在一載體(G)上,並且由一金線(H)構成該藍色發光晶片(A)的電路聯結所構成,而習知的發光二極體照明裝置,一般都會在打線(Wire bonding)製程中縮小該金線(H)的線寬以降低該金線(H)的電阻值,但往往會使得該金線(H)脆弱而容易斷裂,進而無法提高良品率,而增加製造的成本。As shown in FIGS. 1 and 2, the conventional light-emitting diode system has a layer of a first colloid containing a corresponding red phosphor (C) fixed on the bottom of a blue light-emitting chip (A) ( D), and a second colloid (E) containing a corresponding green phosphor (B) is fixed on the top of the blue light-emitting chip (A), which becomes a white multi-wavelength light-emitting diode The grain monomer, using the first colloid (D) as a part for coating a die-bonding glue (F), fixes the grain monomer on a carrier (G), and consists of a gold wire (H) The blue light-emitting chip (A) is composed of circuit connections, and the conventional light-emitting diode lighting devices generally reduce the width of the gold wire (H) during the wire bonding process to reduce the gold The resistance value of the wire (H), but it tends to make the gold wire (H) fragile and easily broken, which can not improve the yield and increase the manufacturing cost.
因此,如何有效藉由創新的設計,提供一種使用晶片級封裝(chip-scale package,CSP)技術並結合發光二極體晶粒、第一磷光介質層、導電層、第二磷光介質層、基板、佈線、錫膏層以及絕緣層之CSP發光二極體封裝裝置,以減少打線時導線脆弱而容易斷裂而造成良品率不佳的問題,等相關產業開發業者與相關研究人員需持續努力克服與解決之課題。Therefore, how to effectively provide a chip-scale package (CSP) technology combined with a light-emitting diode die, a first phosphor dielectric layer, a conductive layer, a second phosphor dielectric layer, and a substrate through innovative design , Wiring, solder paste layer and insulating layer of CSP light-emitting diode packaging devices to reduce the problem of fragile wires that are easily broken during wire bonding and resulting in poor yield. Related industry developers and related researchers need to continue efforts to overcome and The problem solved.
有鑑於此,習知的發光二極體於實際實施時仍存在諸多創新與改進之處,因此,本創作人藉由其豐富之專業知識及實務經驗所輔佐,而加以改善,並據此研創出本創作。In view of this, there are still many innovations and improvements in the conventional light-emitting diodes during actual implementation. Therefore, the creators have improved them with the help of their rich professional knowledge and practical experience, and researched accordingly Create this creation.
本創作之主要目的即在於提供一種CSP發光二極體封裝裝置,係包括有:一發光二極體晶粒 ;一第一磷光介質層,係至少包含一具有一第一磷光粉層之第一封裝膠體且該第一磷光介質層形成於該發光二極體晶粒下方;一導電層,該導電層分別形成於該發光二極體晶粒下方,該導電層彼此分別設置於該第一磷光介質層兩側;一第二磷光介質層,係至少包含一具有一第二磷光粉層之第二封裝膠體,且該第二磷光介質層形成於該發光二極體晶粒上方;一基板,該基板上形成一電極層;一佈線,係形成在與該電極層同一層,用以連接該電極層;一錫膏層,係連接該導電層以及該電極層;以及一絕緣層,係以覆蓋於該佈線上。The main purpose of this creation is to provide a CSP light-emitting diode packaging device, which includes: a light-emitting diode die; a first phosphorescent medium layer, at least including a first phosphor powder layer with a first Encapsulating colloid and the first phosphorescent medium layer is formed under the light-emitting diode grains; a conductive layer is formed under the light-emitting diode grains respectively, and the conductive layers are respectively disposed on the first phosphorescence Two sides of the dielectric layer; a second phosphorescent dielectric layer, which at least includes a second encapsulating colloid with a second phosphor powder layer, and the second phosphorescent dielectric layer is formed above the light-emitting diode die; a substrate, An electrode layer is formed on the substrate; a wiring is formed on the same layer as the electrode layer to connect the electrode layer; a solder paste layer is connected to the conductive layer and the electrode layer; and an insulating layer is used to Cover this wiring.
本創作另外提供一種CSP發光二極體封裝裝置,係包括有:一發光二極體晶粒 ;一第一磷光介質層,係至少包含一具有一第一磷光粉層之第一封裝膠體且該第一磷光介質層形成於該發光二極體晶粒上方;一導電層,該導電層分別形成於該發光二極體晶粒下方,該導電層彼此分別設置於該第一磷光介質層兩側;一第二磷光介質層,係至少包含一具有一第二磷光粉層之第二封裝膠體,且該第二磷光介質層形成於該第一磷光介質層上方;一基板,該基板上形成一電極層;一佈線,係形成在與該電極層同一層,用以連接該電極層;一錫膏層,係連接該導電層以及該電極層;以及一絕緣層,係以覆蓋於該佈線上。The present invention further provides a CSP light emitting diode packaging device, which includes: a light emitting diode die; a first phosphorescent medium layer, which at least includes a first encapsulating colloid with a first phosphor powder layer and the A first phosphorescent dielectric layer is formed above the light-emitting diode grains; a conductive layer is formed under the light-emitting diode grains respectively, and the conductive layers are disposed on both sides of the first phosphorescent medium layer A second phosphorescent medium layer, at least comprising a second encapsulant with a second phosphor powder layer, and the second phosphorescent medium layer is formed above the first phosphorescent medium layer; a substrate on which a substrate is formed An electrode layer; a wiring formed on the same layer as the electrode layer to connect the electrode layer; a solder paste layer connecting the conductive layer and the electrode layer; and an insulating layer covering the wiring .
依據上述技術特徵所述之CSP發光二極體封裝裝置,該發光二極體晶粒係為藍色晶粒。According to the CSP light emitting diode packaging device described in the above technical features, the light emitting diode grains are blue grains.
依據上述技術特徵所述之CSP發光二極體封裝裝置,該第一磷光粉層係為紅色磷光粉層。According to the CSP light emitting diode packaging device described in the above technical features, the first phosphor layer is a red phosphor layer.
依據上述技術特徵所述之CSP發光二極體封裝裝置,該第二磷光粉層係為綠色磷光粉層。According to the CSP light emitting diode packaging device described in the above technical features, the second phosphor layer is a green phosphor layer.
依據上述技術特徵所述之CSP發光二極體封裝裝置,該發光二極體晶粒係為近紫外光晶粒。According to the CSP light emitting diode packaging device described in the above technical features, the light emitting diode crystal grains are near ultraviolet crystal grains.
依據上述技術特徵所述之CSP發光二極體封裝裝置,該第一磷光粉層係為紅色磷光粉層。According to the CSP light emitting diode packaging device described in the above technical features, the first phosphor layer is a red phosphor layer.
依據上述技術特徵所述之CSP發光二極體封裝裝置,該第二磷光粉層係為混合綠色磷光粉層以及藍色磷光粉層。According to the CSP light emitting diode packaging device described in the above technical features, the second phosphor layer is a mixed green phosphor layer and blue phosphor layer.
依據上述技術特徵所述之CSP發光二極體封裝裝置,更包含一固態半球形圓頂,係固設於該基板上且包圍該發光二極體晶粒、該第一磷光介質層以及該第二磷光介質層,且該固態半球形圓頂係由一光透射性材料組成。According to the above technical features, the CSP light emitting diode packaging device further includes a solid hemispherical dome fixed on the substrate and surrounding the light emitting diode die, the first phosphor dielectric layer and the first Two phosphorescent dielectric layers, and the solid hemispherical dome is composed of a light-transmitting material.
依據上述技術特徵所述之CSP發光二極體封裝裝置,更包含一反光層 ,該反光層設置於該發光二極體晶粒與該基板之間。The CSP light emitting diode packaging device according to the above technical features further includes a light reflecting layer disposed between the light emitting diode die and the substrate.
藉此,本創作係提供一種CSP發光二極體封裝裝置,包含發光二極體晶粒、第一磷光介質層、導電層、第二磷光介質層、基板、佈線、錫膏層以及絕緣層,藉由CSP發光二極體封裝裝置之LED結構透過晶片級封裝(chip-scale package,CSP)製程及配合使用之基板,藉由將導線整合成LED結構內之導電層,以解決打線(Wire bonding)製程中因降低導線的電阻值,而縮小導線的線寬,所造成導線脆弱而容易斷裂的問題,並提高產品良品率,進而減少製造的成本。In this way, the author provides a CSP light emitting diode package device, which includes a light emitting diode die, a first phosphor dielectric layer, a conductive layer, a second phosphor dielectric layer, a substrate, wiring, a solder paste layer and an insulating layer, Through the LED structure of the CSP light emitting diode packaging device through the chip-scale package (CSP) process and the substrate used together, the wire bonding is integrated into the conductive layer in the LED structure to solve the wire bonding (Wire bonding) ) In the manufacturing process, the resistance value of the wire is reduced, and the wire width of the wire is reduced, which causes the problem that the wire is fragile and easily broken, and improves the product yield rate, thereby reducing the manufacturing cost.
為利瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合附圖之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍,合先敘明。In order to better understand the technical characteristics, content and advantages of this creation and the effects it can achieve, the expressions of this creation in conjunction with the drawings are described in detail below, and the drawings used therein are only for illustration and auxiliary instructions. For the purpose of this, it may not be the true proportion and precise configuration after the creation of the creation, so it should not be interpreted and limited to the relationship between the proportion and configuration of the attached drawings.
為了使本創作揭示內容的敘述更加詳盡與完備,下文針對了本創作的實施態樣與具體實施例提出了說明性的描述;但這並非實施或運用本創作具體實施例的唯一形式。In order to make the narrative of the disclosure of this creation more detailed and complete, the following provides an illustrative description of the implementation form and specific embodiments of the creation; but this is not the only form of implementing or using the specific embodiments of the creation.
請參閱第2圖至第4圖所示,係本創作之CSP發光二極體封裝裝置之CSP發光二極體結構圖、結構圖以及示意圖。本創作之CSP發光二極體封裝裝置係包含一發光二極體晶粒(1)、一第一磷光介質層(2)、一導電層(3)、一第二磷光介質層(4)、一基板(5)、一佈線(52)、一錫膏層(53)以及一絕緣層(54)。Please refer to Figures 2 to 4 for the CSP light-emitting diode structure diagram, structure diagram and schematic diagram of the CSP light-emitting diode packaging device of the present invention. The CSP light-emitting diode packaging device of this creation includes a light-emitting diode die (1), a first phosphorescent dielectric layer (2), a conductive layer (3), a second phosphorescent dielectric layer (4), A substrate (5), a wiring (52), a solder paste layer (53) and an insulating layer (54).
該發光二極體晶粒(1) ;該第一磷光介質層(2),係至少包含一具有一第一磷光粉層(21)之第一封裝膠體(22)且該第一磷光介質層(2)形成於該發光二極體晶粒(1)下方;該導電層(3),該導電層(3)分別形成於該發光二極體晶粒(1)下方,該導電層(3)彼此分別設置於該第一磷光介質層(2)兩側;該第二磷光介質層(4),係至少包含一具有一第二磷光粉層(41)之第二封裝膠體(42),且該第二磷光介質層(4)形成於該發光二極體晶粒(1)上方;該基板(5),該基板(5)上形成一電極層(51);該佈線(52),係形成在與該電極層(51)同一層,用以連接該電極層(51);該錫膏層(53),係連接該導電層(3)以及該電極層(51);以及該絕緣層(54),係以覆蓋於該佈線(52)上。The light-emitting diode grain (1); the first phosphorescent medium layer (2) at least includes a first encapsulating colloid (22) having a first phosphorescent powder layer (21) and the first phosphorescent medium layer (2) formed under the light-emitting diode grains (1); the conductive layer (3), the conductive layer (3) are formed under the light-emitting diode grains (1), the conductive layer (3 ) Are disposed on both sides of the first phosphorescent medium layer (2); the second phosphorescent medium layer (4) at least includes a second encapsulant (42) having a second phosphor powder layer (41), And the second phosphorescent medium layer (4) is formed above the light-emitting diode grains (1); the substrate (5), an electrode layer (51) is formed on the substrate (5); the wiring (52), It is formed on the same layer as the electrode layer (51) to connect the electrode layer (51); the solder paste layer (53) connects the conductive layer (3) and the electrode layer (51); and the insulation The layer (54) covers the wiring (52).
在一實施例中,該發光二極體晶粒(1)係為藍色晶粒,該第一磷光粉層(21)係為紅色磷光粉層,該第二磷光粉層(41)係為綠色磷光粉層,二該導電層(3)分別形成於該發光二極體晶粒(1)下方,二該導電層(3)彼此分別設置於紅色磷光粉層兩側,藍色晶粒係可將該導電層(3)所提供之電能轉換於光波長,並藉由紅色磷光粉層以及綠色磷光粉層將藍色晶粒所發出部份比例的光波長轉為另一個光波長,使各光波長混合而形成預期之白色光。In one embodiment, the light-emitting diode grains (1) are blue grains, the first phosphor layer (21) is a red phosphor layer, and the second phosphor layer (41) is A green phosphor layer, two conductive layers (3) are formed under the light-emitting diode grains (1), the two conductive layers (3) are respectively disposed on both sides of the red phosphor layer, the blue grain system The electrical energy provided by the conductive layer (3) can be converted to light wavelength, and the red phosphor powder layer and the green phosphor powder layer can convert part of the light wavelength emitted by the blue crystal grain to another light wavelength, so that The wavelengths of each light are mixed to form the expected white light.
在另一實施例中,該發光二極體晶粒(1)係為近紫外光晶粒,該第一磷光粉層(21)係為紅色磷光粉層,該第二磷光粉層(41)係為混合綠色磷光粉層以及藍色磷光粉層,二該導電層(3)分別形成於該發光二極體晶粒(1)下方,二該導電層(3)彼此分別設置於紅色磷光粉層兩側,近紫外光晶粒係可將該導電層(3)所提供之電能轉換於光波長,並藉由紅色磷光粉層以及混合綠色磷光粉層以及藍色磷光粉層將近紫外光晶粒所發出部份比例的光波長轉為另一個光波長,使各光波長混合而形成預期之白色光。In another embodiment, the light-emitting diode crystal grains (1) are near ultraviolet crystal grains, the first phosphor powder layer (21) is a red phosphor powder layer, and the second phosphor powder layer (41) It is a mixture of green phosphor powder layer and blue phosphor powder layer, two conductive layers (3) are formed under the light-emitting diode crystal grains (1) respectively, and the two conductive layers (3) are respectively disposed on the red phosphor powder On both sides of the layer, the near-ultraviolet crystal grains can convert the electrical energy provided by the conductive layer (3) to the light wavelength, and the near-ultraviolet crystal can be converted by the red phosphor layer and the mixed green phosphor layer and the blue phosphor layer The proportion of the light wavelength emitted by the granules is converted to another light wavelength, so that the light wavelengths are mixed to form the expected white light.
本創作係另外提供一種CSP發光二極體封裝裝置係包含一發光二極體晶粒(1)、一第一磷光介質層(2)、一導電層(3)、一第二磷光介質層(4)、一基板(5)、一佈線(52)、一錫膏層(53)以及一絕緣層(54)。This creative department additionally provides a CSP light emitting diode package device comprising a light emitting diode die (1), a first phosphorescent dielectric layer (2), a conductive layer (3), and a second phosphorescent dielectric layer ( 4), a substrate (5), a wiring (52), a solder paste layer (53) and an insulating layer (54).
該發光二極體晶粒(1) ;該第一磷光介質層(2),係至少包含一具有一第一磷光粉層(21)之第一封裝膠體(22)且該第一磷光介質層(2)形成於該發光二極體晶粒(1)上方;該導電層(3),該導電層(3)分別形成於該發光二極體晶粒(1)下方,該導電層(3)彼此分別設置於該第一磷光介質層(2)兩側;該第二磷光介質層(4),係至少包含一具有一第二磷光粉層(41)之第二封裝膠體(42),且該第二磷光介質層(4)形成於該第一磷光介質層(2)上方;該基板(5),該基板(5)上形成一電極層(51);該佈線(52),係形成在與該電極層(51)同一層,用以連接該電極層(51);該錫膏層(53),係連接該導電層(3)以及該電極層(51);以及該絕緣層(54),係以覆蓋於該佈線(52)上。The light-emitting diode grain (1); the first phosphorescent medium layer (2) at least includes a first encapsulating colloid (22) having a first phosphorescent powder layer (21) and the first phosphorescent medium layer (2) formed above the light-emitting diode grains (1); the conductive layer (3), the conductive layer (3) are formed under the light-emitting diode grains (1), the conductive layer (3) ) Are disposed on both sides of the first phosphorescent medium layer (2); the second phosphorescent medium layer (4) at least includes a second encapsulant (42) having a second phosphor powder layer (41), And the second phosphorescent dielectric layer (4) is formed above the first phosphorescent dielectric layer (2); the substrate (5), an electrode layer (51) is formed on the substrate (5); the wiring (52) is Formed on the same layer as the electrode layer (51) to connect the electrode layer (51); the solder paste layer (53) connects the conductive layer (3) and the electrode layer (51); and the insulating layer (54), covering the wiring (52).
在一實施例中,該發光二極體晶粒(1)係為藍色晶粒,該第一磷光粉層(21)係為紅色磷光粉層,該第二磷光粉層(41)係為綠色磷光粉層,二該導電層(3)分別形成於該發光二極體晶粒(1)下方,二該導電層(3)彼此分別設置於該發光二極體晶粒(1)兩側,藍色晶粒係可將該導電層(3)所提供之電能轉換於光波長,並藉由紅色磷光粉層以及綠色磷光粉層將藍色晶粒所發出部份比例的光波長轉為另一個光波長,使各光波長混合而形成預期之白色光。In one embodiment, the light-emitting diode grains (1) are blue grains, the first phosphor layer (21) is a red phosphor layer, and the second phosphor layer (41) is A green phosphor layer, two conductive layers (3) are formed under the light-emitting diode grains (1) respectively, and the two conductive layers (3) are disposed on both sides of the light-emitting diode grains (1) respectively , The blue crystal can convert the electrical energy provided by the conductive layer (3) to the wavelength of light, and the red phosphor powder layer and the green phosphor powder layer can convert part of the light wavelength emitted by the blue crystal grain to At the other light wavelength, the light wavelengths are mixed to form the desired white light.
在另一實施例中,該發光二極體晶粒(1)係為近紫外光晶粒,該第一磷光粉層(21)係為紅色磷光粉層,該第二磷光粉層(41)係為混合綠色磷光粉層以及藍色磷光粉層,二該導電層(3)分別形成於該發光二極體晶粒(1)下方,二該導電層(3)彼此分別設置於該發光二極體晶粒(1)兩側,近紫外光晶粒係可將該導電層(3)所提供之電能轉換於光波長,並藉由紅色磷光粉層以及混合綠色磷光粉層以及藍色磷光粉層將近紫外光晶粒所發出部份比例的光波長轉為另一個光波長,使各光波長混合而形成預期之白色光。In another embodiment, the light-emitting diode crystal grains (1) are near ultraviolet crystal grains, the first phosphor powder layer (21) is a red phosphor powder layer, and the second phosphor powder layer (41) It is a mixture of green phosphor powder layer and blue phosphor powder layer. Two conductive layers (3) are formed under the light-emitting diode crystal grains (1) respectively. The two conductive layers (3) are respectively arranged on the light-emitting diodes. On both sides of the polar body grains (1), the near-ultraviolet grains can convert the electrical energy provided by the conductive layer (3) to the light wavelength, and through the red phosphor powder layer and the mixed green phosphor powder layer and the blue phosphorescence The powder layer converts a portion of the light wavelength emitted by the near-ultraviolet crystal grains to another light wavelength, so that each light wavelength is mixed to form the desired white light.
該基板(5),該基板(5)上形成一電極層(51) ,在一實施例中,該基板(5)係選自為玻璃、石英、陶瓷、電路板或金屬薄板其中之一而形成,該電極層(51)係為陽極電極或陰極電極,在另一實施例中,該基板(5)上更形成一與該發光二極體晶粒(1)同一側之對準標誌,在製作該CSP發光二極體封裝裝置(100)時,藉由該對準標誌於該基板(5)上的配置關係,以提高各元件配置位置之精確性,並使該CSP發光二極體封裝裝置(100)之可靠度提高,在一實施例中,該基板(5)更包含一散熱部,該散熱部係形成於該基板(5)中或表面,且該散熱部係選自絕緣導熱焊料、絕緣導熱油墨或絕緣導熱膠其中之一,該散熱部有助於耗散來自該CSP發光二極體封裝裝置(100)產生的熱,減少持續高溫,以維持穩定的工作效率。The substrate (5), an electrode layer (51) is formed on the substrate (5), in an embodiment, the substrate (5) is selected from one of glass, quartz, ceramic, circuit board or metal thin plate and Forming, the electrode layer (51) is an anode electrode or a cathode electrode, in another embodiment, an alignment mark on the same side of the light emitting diode grain (1) is further formed on the substrate (5), When manufacturing the CSP light emitting diode packaging device (100), the arrangement relationship of the alignment marks on the substrate (5) is used to improve the accuracy of the arrangement position of each component and make the CSP light emitting diode The reliability of the packaging device (100) is improved. In an embodiment, the substrate (5) further includes a heat dissipation portion formed in or on the surface of the substrate (5), and the heat dissipation portion is selected from insulation One of thermally conductive solder, insulating thermally conductive ink or insulating thermally conductive adhesive, the heat dissipating portion helps to dissipate the heat generated from the CSP light emitting diode packaging device (100), reduce the continuous high temperature, and maintain stable working efficiency.
該佈線(52),係形成在與該電極層(51)同一層,用以連接該電極層(51) ,該佈線(52)係為金屬線段,用以電性連接該電極層(51)並形成具有電特性互異的兩條該佈線(52),該佈線(52)更可形成複數個圖案化之金屬線段,該些圖案化之金屬線段之一端電性連接該陽極電極或該陰極電極,而另一端則可共接於其他金屬線段,並以串聯或是並聯的佈線方式來電性連接相鄰之該CSP發光二極體封裝裝置(100)或者電性連接其他元件。The wiring (52) is formed on the same layer as the electrode layer (51) to connect the electrode layer (51), and the wiring (52) is a metal line segment to electrically connect the electrode layer (51) And forming two wirings (52) having mutually different electrical characteristics, the wiring (52) may further form a plurality of patterned metal line segments, and one end of the patterned metal line segments is electrically connected to the anode electrode or the cathode The other end of the electrode can be connected to other metal line segments in series or parallel to electrically connect the adjacent CSP light emitting diode packaging device (100) or other components.
該錫膏層(53),係電性連接該導電層(3)以及該電極層(51) ,且該錫膏層(53)係藉由烤合連接該導電層(3)以及該電極層(51)。The solder paste layer (53) is electrically connected to the conductive layer (3) and the electrode layer (51), and the solder paste layer (53) is connected to the conductive layer (3) and the electrode layer by baking (51).
該絕緣層(54),係以覆蓋於該佈線(52)上,該絕緣層(54)可全部覆蓋於該佈線(52)上,或者,該絕緣層(54)可部分覆蓋於該佈線(52)上,以選擇性地曝露該佈線(52),以作為日後電性連接其他元件。The insulating layer (54) covers the wiring (52), the insulating layer (54) may cover the wiring (52) entirely, or the insulating layer (54) may partially cover the wiring (52) 52), to selectively expose the wiring (52) as an electrical connection to other components in the future.
請一併再參閱第4圖所示,該CSP發光二極體封裝裝置更包含一半球形圓頂(6),係固設於該基板(5)上且包圍該發光二極體晶粒(1)、該第一磷光介質層(2)以及該第二磷光介質層(4),該固態半球形圓頂(6)係藉由模塑成型或另一技術而形成,在一實施例中,該固態半球形圓頂(6)係由一光透射性材料組成,而具有較高的光學透射性,較佳地為透明之該光透射性材料。Please refer to FIG. 4 again. The CSP light emitting diode packaging device further includes a hemispherical dome (6), which is fixed on the substrate (5) and surrounds the light emitting diode die (1) ), the first phosphorescent dielectric layer (2) and the second phosphorescent dielectric layer (4), the solid hemispherical dome (6) is formed by molding or another technique, in one embodiment, The solid hemispherical dome (6) is composed of a light-transmitting material, and has high optical transmittance, preferably the transparent light-transmitting material.
如第2圖至第4圖所示CSP發光二極體封裝裝置之製造流程如第5圖所示,係至少包括有下列步驟:一CSP發光二極體形成步驟(S1)、一基板形成步驟(S2)、一切割基板步驟(S3)、一錫膏層形成步驟(S4)以及一安裝步驟(S5)。As shown in Figures 2 to 4, the manufacturing process of the CSP light emitting diode packaging device is as shown in Figure 5, which includes at least the following steps: a CSP light emitting diode forming step (S1), a substrate forming step (S2), a substrate cutting step (S3), a solder paste layer forming step (S4), and a mounting step (S5).
該CSP發光二極體形成步驟(S1): 提供一既定光色的發光二極體晶粒(1),並於該發光二極體晶粒(1)上以一配置關係配置一第一磷光介質層(2)、一導電層(3)以及一第二磷光介質層(4),藉以形成一CSP發光二極體。 The CSP light emitting diode forming step (S1): Provide a light-emitting diode die (1) of a predetermined light color, and configure a first phosphor layer (2) and a conductive layer (3) on the light-emitting diode die (1) in a configuration relationship And a second phosphorescent dielectric layer (4) to form a CSP light emitting diode.
本創作提供該配置關係係為一第一磷光介質層(2),係至少包含一具有一第一磷光粉層(21)之第一封裝膠體(22)且該第一磷光介質層(2)形成於該發光二極體晶粒(1)下方;一導電層(3),該導電層(3)分別形成於該發光二極體晶粒(1)下方,該導電層(3)彼此分別設置於該第一磷光介質層(2)兩側;一第二磷光介質層(4),係至少包含一具有一第二磷光粉層(41)之第二封裝膠體(42),且該第二磷光介質層(4)形成於該發光二極體晶粒(1)上方。The creation provides that the configuration relationship is a first phosphorescent medium layer (2), which at least includes a first encapsulating colloid (22) having a first phosphorescent powder layer (21) and the first phosphorescent medium layer (2) Formed under the light emitting diode grains (1); a conductive layer (3), the conductive layers (3) are formed under the light emitting diode grains (1), the conductive layers (3) are respectively Disposed on both sides of the first phosphorescent dielectric layer (2); a second phosphorescent dielectric layer (4) at least includes a second encapsulating colloid (42) having a second phosphorescent powder layer (41), and the first A phosphorescent dielectric layer (4) is formed above the light-emitting diode crystal grains (1).
本創作另外提供該配置關係係可為一第一磷光介質層(2),係至少包含一具有一第一磷光粉層(21)之第一封裝膠體(22)且該第一磷光介質層(2)形成於該發光二極體晶粒(1)上方;一導電層(3),該導電層(3)分別形成於該發光二極體晶粒(1)下方,該導電層(3)彼此分別設置於該發光二極體晶粒(1)兩側;一第二磷光介質層(4),係至少包含一具有一第二磷光粉層(41)之第二封裝膠體(42),且該第二磷光介質層(4)形成於該第一磷光介質層(2)上方。The present invention further provides that the configuration relationship may be a first phosphorescent medium layer (2), which at least includes a first encapsulating colloid (22) having a first phosphorescent powder layer (21) and the first phosphorescent medium layer ( 2) Formed above the light-emitting diode grains (1); a conductive layer (3), the conductive layer (3) is formed under the light-emitting diode grains (1), the conductive layer (3) They are respectively arranged on both sides of the light-emitting diode die (1); a second phosphorescent medium layer (4) at least includes a second encapsulating colloid (42) with a second phosphor powder layer (41), And the second phosphorescent dielectric layer (4) is formed above the first phosphorescent dielectric layer (2).
該基板形成步驟(S2): 於一基板(5)上預先形成與外部連接之一電極層(51),而該電極層(51)連接具有電特性互異的兩條佈線(52),且使一絕緣層(54)形成覆蓋該佈線(52)。The substrate forming step (S2): an electrode layer (51) connected to the outside is formed on a substrate (5) in advance, and the electrode layer (51) connects two wirings (52) having mutually different electrical characteristics, and An insulating layer (54) is formed to cover the wiring (52).
該切割基板步驟(S3): 以一機械刀(56)切割該基板(5)之一切割道(55)以形成複數個各自獨立的CSP發光二極體。請一併參閱第6圖至第8圖,係本創作之CSP發光二極體封裝裝置之切割前基板圖、切割基板步驟圖、切割後基板圖,如切割前基板圖所示,該基板(5)上除了有複數個CSP發光二極體封裝裝置(100)之區域(58),也預留可供一機械刀(56)切割之一切割道(55);而如切割基板步驟圖所示,藉由該機械刀(56)切割該基板(5)之該切割道(55),而分離出單一的該CSP發光二極體封裝裝置(100)之該區域(58);而如切割後基板圖所示,該基板(5)之該切割道(55)已經被該機械刀(56)切開,各個該CSP發光二極體封裝裝置(100)之該區域(58)彼此分離。The substrate cutting step (S3): a mechanical knife (56) is used to cut a cutting lane (55) of the substrate (5) to form a plurality of independent CSP light-emitting diodes. Please refer to Figures 6 to 8 together, which are the pre-cutting substrate diagram, the cutting substrate step diagram, and the post-cutting substrate diagram of the CSP light emitting diode packaging device of this creation, as shown in the pre-cutting substrate diagram, the substrate ( 5) In addition to the area (58) of a plurality of CSP light emitting diode packaging devices (100), a mechanical knife (56) is also reserved for cutting a cutting path (55); as shown in the step of cutting a substrate The cutting path (55) of the substrate (5) is cut by the mechanical knife (56) to separate the area (58) of the single CSP light emitting diode packaging device (100); As shown in the rear substrate diagram, the cutting path (55) of the substrate (5) has been cut by the mechanical knife (56), and the regions (58) of each of the CSP light emitting diode packaging devices (100) are separated from each other.
該錫膏層形成步驟(S4): 形成一孔位(571)於該基板(5)之該電極層(51)位置之一鋼網(57),並使該鋼網(57)之該孔位(571)對準覆蓋於該基板(5)之該電極層(51)上,再塗佈錫膏於該鋼網(57)上,並形成一錫膏層(53)於該電極層(51)上,最後將該鋼網(57)上多餘的錫膏刮除,如第9圖至第11圖所示,係本創作之CSP發光二極體封裝裝置之錫膏層形成步驟(一)、錫膏層形成步驟(二)、錫膏層形成步驟(三)。The solder paste layer forming step (S4): forming a steel mesh (57) with a hole position (571) at the position of the electrode layer (51) of the substrate (5), and making the hole of the steel mesh (57) The position (571) is aligned and covered on the electrode layer (51) of the substrate (5), and then a solder paste is coated on the steel mesh (57), and a solder paste layer (53) is formed on the electrode layer (51) 51), and finally scrape off the excess solder paste on the steel mesh (57), as shown in Figures 9 to 11, it is the step of forming the solder paste layer of the CSP light-emitting diode packaging device of this creation (1 ), solder paste layer forming step (2), solder paste layer forming step (3).
該安裝步驟(S5): 將該CSP發光二極體之該導電層(3)對準覆蓋於該基板(5)之該錫膏層(53)上,並烤合完成,如第12圖,係本創作之CSP發光二極體封裝裝置之安裝步驟。The mounting step (S5): align the conductive layer (3) of the CSP light-emitting diode on the solder paste layer (53) covering the substrate (5), and bake is completed, as shown in Figure 12, This is the installation step of the CSP light-emitting diode package device created by the author.
請一併參閱第13圖,係本創作之CSP發光二極體封裝裝置之反光層配置圖,該CSP發光二極體封裝裝置(100)更包含一反光層(7) ,該反光層(7)設置於該發光二極體晶粒(1)與該基板(5)之間,該反光層(7)具有高反射率的性能要求,係輔助提升預期之白色光表現及亮度效果。Please also refer to FIG. 13 for the configuration of the reflective layer of the CSP light emitting diode packaging device of the present invention, the CSP light emitting diode packaging device (100) further includes a reflective layer (7), the reflective layer (7 ) Located between the light-emitting diode die (1) and the substrate (5), the reflective layer (7) has a high reflectivity performance requirement, which assists in enhancing the expected white light performance and brightness effect.
綜上所述,本創作與現有技術與產品相較之下,本創作具有以下優點之一:In summary, compared with the existing technology and products, this creation has one of the following advantages:
本創作目的之一係藉由CSP發光二極體封裝裝置之LED結構透過晶片級封裝(chip-scale package,CSP)製程及配合使用之基板,藉由將導線整合成LED結構內之導電層,減少打線時所需一定之空間,不僅解決因打線所造成良品率的問題,而且縮小整體CSP發光二極體封裝裝置體積,使產品的厚度更加輕薄。One of the purposes of this creation is to use the LED structure of the CSP light emitting diode packaging device through the chip-scale package (CSP) process and the substrate used together, by integrating the wires into the conductive layer in the LED structure, Reducing the amount of space required for wire bonding not only solves the yield problem caused by wire bonding, but also reduces the overall volume of the CSP light-emitting diode packaging device, making the product thinner and lighter.
本創作目的之一係可藉由從單一基板切割,以形成複數個CSP發光二極體封裝裝置,而大量製造單一個CSP發光二極體封裝裝置,並可使用單一個CSP發光二極體封裝裝置重新分配於基板上,以符合產品的需要,進而充分發揮其功能。One of the purposes of this creation is to form multiple CSP light-emitting diode packaging devices by cutting from a single substrate, and mass-produce a single CSP light-emitting diode packaging device and use a single CSP light-emitting diode package The device is redistributed on the substrate to meet the needs of the product, and then fully exert its functions.
綜上所述,本創作之CSP發光二極體封裝裝置,的確能藉由上述所揭露之實施例,達到所預期之使用功效,且本創作亦未曾公開於申請前,誠已完全符合專利法之規定與要求。爰依法提出新型專利之申請,懇請惠予審查,並賜准專利,則實感德便。In summary, the CSP light-emitting diode packaging device of this creation can indeed achieve the expected use effect through the embodiments disclosed above, and this creation has not been disclosed before the application, and it has fully complied with the patent law Regulations and requirements. I filed an application for a new type of patent in accordance with the law, and pleaded for the review and granted the patent.
惟,上述所揭示之圖示及說明,非為限定本創作之保護範圍;大凡熟悉該項技藝之人士,其所依本創作之特徵範疇,所作之其它等效變化或修飾,皆應視為不脫離本創作之設計範疇。However, the illustrations and descriptions disclosed above are not intended to limit the scope of protection of this creation; anyone who is familiar with this skill, other equivalent changes or modifications made according to the characteristic category of this creation should be deemed Do not deviate from the design scope of this creation
[先前技術] (A):藍色發光晶片 (B):綠色磷光劑 (C):紅色磷光劑 (D):第一膠體 (E):第二膠體 (F):固晶膠 (G):載體 (H):金線 [本創作] (100):CSP發光二極體封裝裝置 (1):發光二極體晶粒 (2):第一磷光介質層 (21):第一磷光粉層 (22):第一封裝膠體 (3):導電層 (4):第二磷光介質層 (41):第二磷光粉層 (42):第二封裝膠體 (5):基板 (51):電極層 (52):佈線 (53):錫膏層 (54):絕緣層 (55):切割道 (56):機械刀 (57):鋼網 (571):孔位 (58):區域 (6):固態半球形圓頂 (7):反光層 (S1):CSP發光二極體形成步驟 (S2):基板形成步驟 (S3):切割基板步驟 (S4):錫膏層形成步驟 (S5):安裝步驟 [Prior art] (A): Blue light-emitting chip (B): Green phosphor (C): Red phosphor (D): The first colloid (E): second colloid (F): solid crystal glue (G): carrier (H): Gold thread [This creation] (100): CSP light emitting diode packaging device (1): LED grains (2): First phosphorescent dielectric layer (21): First phosphor layer (22): The first packaging colloid (3): conductive layer (4): Second phosphorescent dielectric layer (41): Second phosphor layer (42): Second packaging colloid (5): substrate (51): electrode layer (52): Wiring (53): solder paste layer (54): Insulation layer (55): Cutting road (56): Mechanical knife (57): Steel mesh (571): Hole position (58): area (6): Solid hemispherical dome (7): reflective layer (S1): CSP light emitting diode forming step (S2): Substrate formation step (S3): Step of cutting substrate (S4): Step of forming solder paste layer (S5): Installation steps
第1圖係習知之發光二極體之示意圖。 第2圖係本創作之CSP發光二極體封裝裝置之結構圖(一)。 第3圖係本創作之CSP發光二極體封裝裝置之結構圖(二)。 第4圖係本創作之CSP發光二極體封裝裝置之示意圖。 第5圖係本創作之CSP發光二極體封裝裝置之製作流程圖。 第6圖係本創作之CSP發光二極體封裝裝置之切割前基板圖。 第7圖係本創作之CSP發光二極體封裝裝置之切割基板步驟圖。 第8圖係本創作之CSP發光二極體封裝裝置之切割後基板圖。 第9圖係本創作之CSP發光二極體封裝裝置之錫膏層形成步驟(一)。 第10圖係本創作之CSP發光二極體封裝裝置之錫膏層形成步驟(二)。 第11圖係本創作之CSP發光二極體封裝裝置之錫膏層形成步驟(三)。 第12圖係本創作之CSP發光二極體封裝裝置之安裝步驟。 第13圖係本創作之CSP發光二極體封裝裝置之反光層配置圖。 Figure 1 is a schematic diagram of a conventional light-emitting diode. Figure 2 is a structural diagram of the CSP light emitting diode package device (1). Figure 3 is a structural diagram (2) of the CSP light emitting diode packaging device of this creation. Figure 4 is a schematic diagram of the CSP light emitting diode packaging device of the present creation. Figure 5 is a flow chart of the creation of the CSP light emitting diode packaging device of this creation. Figure 6 is a diagram of the substrate before cutting of the CSP light emitting diode packaging device of the present invention. Fig. 7 is a step diagram of the cutting substrate of the CSP light emitting diode packaging device of the present invention. Figure 8 is a cut-away substrate view of the CSP light-emitting diode packaging device of this creation. Figure 9 is the step (1) of forming the solder paste layer of the CSP light-emitting diode packaging device of this creation. Fig. 10 is the step (2) of forming the solder paste layer of the CSP light emitting diode packaging device of this creation. Figure 11 is the step (3) of forming the solder paste layer of the CSP light-emitting diode packaging device of this creation. Figure 12 shows the installation steps of the CSP light-emitting diode packaging device of this creation. Figure 13 is a layout diagram of the reflective layer of the CSP light-emitting diode packaging device of this creation.
(100):CSP發光二極體封裝裝置 (100): CSP light emitting diode packaging device
(1):發光二極體晶粒 (1): LED grains
(2):第一磷光介質層 (2): First phosphorescent dielectric layer
(21):第一磷光粉層 (21): First phosphor layer
(22):第一封裝膠體 (22): The first packaging colloid
(3):導電層 (3): conductive layer
(4):第二磷光介質層 (4): Second phosphorescent dielectric layer
(41):第二磷光粉層 (41): Second phosphor layer
(42):第二封裝膠體 (42): Second packaging colloid
(5):基板 (5): substrate
(51):電極 (51): electrode
(52):佈線 (52): Wiring
(53):錫膏層 (53): solder paste layer
(54):絕緣層 (54): Insulation layer
Claims (10)
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US20220246795A1 (en) * | 2021-02-02 | 2022-08-04 | Lite-On Technology Corporation | Light-emitting device |
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US20220246795A1 (en) * | 2021-02-02 | 2022-08-04 | Lite-On Technology Corporation | Light-emitting device |
US12194917B2 (en) * | 2021-02-02 | 2025-01-14 | Lite-On Technology Corporation | Light-emitting device |
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