M363674 五、新型說明： 【新型所屬之技術領域】 本創作係提供一種引腳型電阻保險絲結構，尤指一種 可精確地控制該電阻保險絲、纟i構中發熱電阻線路層之電阻 值，而不易產生誤差之引腳型電阻保險絲結構。 -【先前技術】 就不僅可防止過電流，亦可防止過電壓之保護元件而 言，周知的有：在基板上積層發熱體與低熔點金屬體而成 之保護元件，而習有之保護元件，在異常時發熱體會通電， 藉由發熱體之發熱，來使低熔點金屬體熔融分離。熔融之 低熔點金屬體，對於載置有低熔點金屬體的電極表面具有 良好的附著性，會被拉到電極上，結果，因低熔點金屬體 的熔斷而將電流切斷。 如第一圖所示即為一種習有保護元件之結構示意 圖，該保護元件1主要設有一基板11，該基板11上積層 有發熱電阻體12、低熔點之熔絲單元13、第一、第二、第 三、第四電極141、142、143、144以及線路15，且該發 熱電阻體12與低熔點之熔絲單元13係藉由線路15相互連 接，該發熱電阻體12係連接覆蓋於第一、第二電極141、 142上，該熔絲單元13則連接覆蓋於第三電極、第四電極 143、144與線路15上，該第一、第三、第四電極14卜143、 144則分別連接有引腳16，用以將電流輸入或輸出各電極 141、142、143、144 5而當異常狀態（例如過電壓或過電流） 時，該發熱電阻體12發熱則使低熔點之熔絲單元13熔融 M363674 分離’以切斷電流達到保護電路之作用。 有保護元件中，該基板(上先 ==及線路15後再形成發熱電阻體= -早兀13丨成型步驟較為繁複；而為了達到俘 .度，所使用的發熱電阻體 趟濩電路的精 -即精度愈高，同睥者右須越小越好，亦 埶，所以於為 有電流流經發熱電阻體時會產生古 職絲單元之敎其產生之焦耳熱量熱傳導至低 係數必項率問^，而且發熱電阻體的電阻Ρ产 你数义頊越低越好，以 电丨且/皿度 維持其電阻值於声祐^把成氣阻值的偏差， 下，產生特定二耳：:體可在特定額定電流條件 特定的焦耳得低溶點熔絲單元因吸收該 …里導致-度上昇至某特定溫度而熔斷。 【新型内容】、 阻保要目的即係在提供-種可精確地控制該電 差之引腳型電阻保險絲結構。 、 包含ί達if目的，本創作之引腳型電阻保險絲結構至少 有.基板、二發熱電阻電極、_ 發熱電阻線路廣以及炫絲層，各電===二接腳、 係同時形成於該基板上，且各 ^離该線路層 t 电位係相互分離，而該發埶 該發埶雷t各發熱電阻電極形成電連接而成為一體’，、 ^ m路層上設有第_保護層 表面設有切割口’而該第-保“2= 熔％ MΜ將4則口完全覆蓋、層則盘各 I 糸電極形成電連接’該炫絲層並與其中一發熱=電： 4 M363674 形成連接，如此不僅結構成形簡便，且可更精確地控制該 發熱電阻線路層之電阻值。 μ . 【實施方式】 ， • 本創作之特點’可參閱本案圖式及實施例之詳細說明 ^ 而獲得清楚地瞭解。 • 本創作引腳型電阻保險絲結構」，其中，該電阻保險 絲結構2，如第二圖及第三圖之第一實施例所示，其至少 包含有： 籲 基板21 ; 二個發熱電阻電極221、222 ’各發熱電阻電極221、 222係設於該基板21上並相互分離； 二個熔絲電極223、224 ’各熔絲電極223、224係設 於該基板21上並相互分離； 三個接腳24，該接腳24 —端係分別與其中一發熱電 阻電極221以及二熔絲電極223、224連接，用以將電流輸 入或輸出該電極221、223、224 ; 籲發熱電阻線路層25，該發熱電阻線路層25係同時與 各電極221、222、223、224形成於該基板21上，並與各 發熱電阻電極221、222形成電連接，使其發熱電阻線路層 25連接發熱電阻電極221、222形成一體，該發熱電阻線 路層25上設有第一保護層271，該發熱電阻線路層25及 第一保護層271表面設有切割口 272’而該第一保護層271 表面並設有第二保護層273,以將該切割口 272完全覆蓋； 以及 烙絲層26 ’該溶絲層26係設於該基板21上，並與各 M363674 熔絲電極223、224連接，該熔絲層26上方並設有絕緣層 261，該絕緣層261可以為含松香樹脂類之助焊劑； 最後可進一步在該絕緣層261表面覆蓋一第三保護層 . 29 ， ' ' ^ 該第三保護層29可以為具低導熱率之熱阻絕緣材質。 . 如圖所示之實施中，各電極221、222、223、224、接 腳24、發熱電阻線路層25以及熔絲層26係設於該基板21 同一表面上，該熔絲層26係設於第二保護層273上方，該 熔絲層26與其中一發熱電阻電極222係藉由連接線路23 • 連接。 該引腳型電阻保險絲結構實際使用時，如第四圖所 示，若對齊納二極體（Zener diode)施加擊穿電壓以上之 逆電壓，會使基極電流i b急劇流通，藉此，使大的集極電 流i c通過發熱電阻線路層2 5，並使發熱電阻線路層2 5發 熱。此發熱所產生之焦耳熱量將熱傳導於發熱電阻線路層 25上的熔絲層26，來熔斷低熔點之熔絲層26，俾防止對 端子Al、A2施加過電壓。此情況下，因為溶絲層26將在 • 26a與26b等2個位置處被熔斷，因此熔斷後便完全切斷 對發熱電阻線路層25的通電。 本創作可改善習有厚膜電阻經雷射修正電阻值後再覆 蓋保護層時，由於電阻體將大面積接觸該保護層，會造成 電阻體之電阻值產生較大之誤差，更可精確地控制該發熱 電阻線路層之電阻值。 ' 而本創作之製造方法，如第五圖所示，係包含有下列 步驟： 步驟A、提供一表面覆蓋有金屬層31之基板21，如第 6 M363674 六圖所示，該基板21可以為具耐熱性及尺寸安定性佳之材 料可為有機材料如：環氧樹脂含浸玻璃纖維、聚亞醯胺樹 脂及聚亞醯胺樹脂含浸玻璃纖維等及無機材料如陶瓷等， - 該金屬層31可為具高電阻率之合金材料，例如可為鎳鉻、 .鎳銅、鎳合金、錳銅、銅合金等。 - 步驟B、於該金屬層31上同時形成有發熱電阻電極 .221、222、熔絲電極223、224以及發熱電阻線路層25， 如第七圖所示，且該發熱電阻線路層25係連接各發熱電阻 電極221、222，使其發熱電阻線路層25連接發熱電阻電 > 極221、222形成一體，其中可藉由貼乾膜、Μ曝光、顯 影、蝕刻及剝膜等工序成型。 步驟C、可藉由印刷方式於發熱電阻線路層25表面形 成第一保護層271，如第八圖所示，該第一保護層271可 以為具高導熱率之絕緣材質，例如可以為高分子含有高導 熱率之無機填充料之高分子複合材料，其中，高分子材料 可為環氧樹脂、石夕樹脂、聚亞醯胺樹脂等熱固性樹脂材料 或聚醯胺、聚碳酸脂及液晶高分子材料等熱塑性樹脂材 > 料，而高導熱率之無機填充料可為二氧化矽、氧化鋁、氮 化鋁、碳化矽及氧化鈹等。 步驟D、使用雷射或機械調阻機調整該發熱電阻線路 層25之電阻值，且於該發熱電阻線路層25及第一保護層 . 271表面形成有切割口 272，如第九圖所示。 步驟Ε、形成第二保護層273於第一保護層271表面， 並將該切割口 272完全覆蓋，如第十圖所示，而該第二保 護層273可以與第一保護層為相同材質（具高導熱率之絕 緣材質）。 7 M363674 步驟F、形成連接線路23,步驟E中該第二保護層273 係將部份發熱電阻電極222露出，如第十一圖所示，而該 連接線路23則設置於第二保護層273上方並與該發熱電阻 電極2 2 2連接。 、 步驟G、形成溶絲層26，該溶絲層26係與炫絲電極 223、224連接’並猎由該連接線路23與其中一發熱電阻 電極222連接，則完成如第二圖及第三圖所示之電阻保險 絲結構2。M363674 V. New description: [New technical field] This creation provides a pin-type resistor fuse structure, especially a resistor that can accurately control the resistance of the resistor fuse and the heating resistor circuit layer. A pin type resistor fuse structure that produces an error. - [Prior Art] A protective element that not only prevents overcurrent but also prevents overvoltage protection, is a protective element formed by laminating a heating element and a low melting point metal body on a substrate, and a conventional protective element. When the abnormality occurs, the heating element is energized, and the low-melting-point metal body is melted and separated by the heat generation of the heating element. The molten low-melting-point metal body has good adhesion to the surface of the electrode on which the low-melting-point metal body is placed, and is pulled to the electrode. As a result, the current is cut by the melting of the low-melting-point metal body. As shown in the first figure, it is a schematic diagram of a conventional protective element. The protective element 1 is mainly provided with a substrate 11 on which a heating resistor 12, a low melting point fuse unit 13, a first and a Second, third and fourth electrodes 141, 142, 143, 144 and line 15, and the heating resistor 12 and the low melting fuse unit 13 are connected to each other by a line 15, and the heating resistor 12 is connected to cover On the first and second electrodes 141 and 142, the fuse unit 13 is connected to cover the third electrode, the fourth electrode 143, 144 and the line 15, and the first, third, and fourth electrodes 14 are 143, 144. A pin 16 is respectively connected to input or output current to each of the electrodes 141, 142, 143, and 144 5, and when an abnormal state (for example, an overvoltage or an overcurrent) is generated, the heating resistor 12 generates a low melting point. The fuse unit 13 melts M363674 to separate 'to cut off the current to the protection circuit. In the protective element, the substrate (the first step == and the line 15 is followed by the formation of the heating resistor body = - the early 13兀 molding step is more complicated; and in order to achieve the capture degree, the heating resistor body circuit used is fine - that is, the higher the accuracy, the smaller the right side of the same person, the better, and the lower the coefficient. Therefore, when there is a current flowing through the heating resistor, the coke heat generated by the old-fashioned wire unit is generated to a low coefficient. ^, and the resistance of the heating resistor Ρ 你 你 你 数 数 数 数 数 数 数 数 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 顼 维持The body can be blown at a certain rated current condition, and the low melting point fuse unit is caused to absorb the temperature to a certain temperature and melt. [New content], the purpose of the protection is to provide - accurate The structure of the pin type resistor fuse for controlling the electric difference. The purpose of the pin type resistor fuse structure of the present invention is at least a substrate, two heat generating resistor electrodes, a wide heating resistor circuit, and a dazzling layer. Electric === two pins, the same Formed on the substrate, and each of the circuit layer t potentials are separated from each other, and the heat generating resistor electrodes of the hairpin are electrically connected to form an integral body, and the ^m road layer is provided with the first The surface of the protective layer is provided with a cutting opening' and the first-protective "2= fused % M Μ completely covers 4 ports, and the layers are electrically connected to each of the I 糸 electrodes". The skein layer is combined with one of the heats = electricity: 4 M363674 forms a connection, which not only makes the structure easy to form, but also can more accurately control the resistance value of the heating resistor circuit layer. [Embodiment], • The characteristics of this creation can be referred to the detailed description of the present embodiment and the embodiment ^ Obtaining a clear understanding of the present invention. The resistor fuse structure 2, as shown in the first embodiment of the second and third figures, includes at least: a substrate 21; The two heat-generating resistor electrodes 221 and 222 ′ are disposed on the substrate 21 and are separated from each other; the two fuse electrodes 223 and 224 ′ are respectively disposed on the substrate 21 . And separated from each other; The pin 24 is connected to one of the heating resistor electrodes 221 and the two fuse electrodes 223 and 224 for inputting or outputting current to the electrodes 221, 223, and 224; The heating resistor circuit layer 25 is formed on the substrate 21 at the same time as the electrodes 221, 222, 223, and 224, and is electrically connected to the heating resistor electrodes 221 and 222, so that the heating resistor circuit layer 25 is connected to the heating resistor electrode. 221, 222 is integrally formed, and the first protective layer 271 is disposed on the heating resistor circuit layer 25. The surface of the heating resistor circuit layer 25 and the first protective layer 271 is provided with a cutting opening 272', and the surface of the first protective layer 271 is disposed a second protective layer 273 is provided to completely cover the cutting opening 272; and a soldering layer 26' is disposed on the substrate 21 and connected to each of the M363674 fuse electrodes 223, 224. An insulating layer 261 is disposed above the layer 26, and the insulating layer 261 may be a flux containing a rosin resin. Finally, a third protective layer may be further coated on the surface of the insulating layer 261. 29 , ' ' ^ the third protective layer 29 can be of low thermal conductivity Insulation resistance material. In the implementation shown in the figure, each of the electrodes 221, 222, 223, 224, the pin 24, the heating resistor circuit layer 25 and the fuse layer 26 are disposed on the same surface of the substrate 21, and the fuse layer 26 is provided. Above the second protective layer 273, the fuse layer 26 and one of the heat generating resistor electrodes 222 are connected by a connection line 23. When the pin type resistor fuse structure is actually used, as shown in the fourth figure, if the Zener diode is applied with a reverse voltage higher than the breakdown voltage, the base current ib is rapidly circulated, thereby making the base current ib rapidly flow. The large collector current ic passes through the heating resistor circuit layer 25, and causes the heating resistor circuit layer 25 to generate heat. The Joule heat generated by this heat is thermally conducted to the fuse layer 26 on the heat generating resistor wiring layer 25 to fuse the low melting point fuse layer 26, thereby preventing an overvoltage from being applied to the terminals A1, A2. In this case, since the lysate layer 26 is to be fused at two positions such as 26a and 26b, the electric current to the heating resistor circuit layer 25 is completely cut off after the smelting. The creation can improve the thickness of the thick film resistor after the laser correction resistance value and then cover the protective layer. Since the resistor body will contact the protective layer in a large area, the resistance value of the resistor body may be greatly increased, and the precision may be accurately The resistance value of the heating resistor circuit layer is controlled. The manufacturing method of the present invention, as shown in the fifth figure, includes the following steps: Step A: providing a substrate 21 having a surface covered with a metal layer 31, as shown in FIG. 6 M363674, the substrate 21 may be The material having good heat resistance and dimensional stability may be organic materials such as epoxy resin impregnated glass fiber, polyimide resin and polyamidene resin impregnated glass fiber, and inorganic materials such as ceramics, etc. - the metal layer 31 may be The alloy material having high electrical resistivity may be, for example, nickel chromium, nickel nickel, nickel alloy, manganese copper, copper alloy or the like. - Step B, on the metal layer 31, a heating resistor electrode .221, 222, a fuse electrode 223, 224, and a heating resistor circuit layer 25 are simultaneously formed, as shown in the seventh figure, and the heating resistor circuit layer 25 is connected. Each of the heating resistor electrodes 221 and 222 is connected to the heating resistor circuit layer 25 to form a heating resistor. The poles 221 and 222 are integrally formed, and can be formed by a process such as laminating, exposing, developing, etching, and stripping. Step C, the first protective layer 271 can be formed on the surface of the heating resistor circuit layer 25 by printing. As shown in FIG. 8 , the first protective layer 271 can be an insulating material with high thermal conductivity, for example, a polymer. A polymer composite material containing an inorganic filler having a high thermal conductivity, wherein the polymer material may be a thermosetting resin material such as an epoxy resin, a Lixi resin or a polyamidene resin, or a polyamine, a polycarbonate, or a liquid crystal polymer. A thermoplastic resin material such as a material, and the inorganic filler having a high thermal conductivity may be cerium oxide, aluminum oxide, aluminum nitride, cerium carbide, cerium oxide or the like. Step D: adjusting the resistance value of the heating resistor circuit layer 25 by using a laser or a mechanical resistance adjusting machine, and forming a cutting opening 272 on the surface of the heating resistor circuit layer 25 and the first protective layer 271, as shown in FIG. . Step Ε, forming a second protective layer 273 on the surface of the first protective layer 271, and completely covering the cutting opening 272, as shown in the tenth figure, and the second protective layer 273 may be the same material as the first protective layer ( Insulating material with high thermal conductivity). 7 M363674 Step F, forming a connection line 23, in the step E, the second protection layer 273 exposes a portion of the heating resistor electrode 222, as shown in FIG. 11, and the connection line 23 is disposed on the second protection layer 273. The upper side is connected to the heat generating resistor electrode 2 2 2 . Step G, forming a lyophilized layer 26, which is connected to the glazed electrodes 223, 224 and connected to the one of the heating resistor electrodes 222 by the connecting line 23, and then completed as shown in the second figure and the third The resistor fuse structure 2 shown in the figure.
如第十二圖為本創作之第二實施例，其同樣設有：基 板21、複數電極（發熱電阻電極22卜222、熔絲電極223、 224)、接腳24、發熱電阻線路層25以及熔絲層26，且各 發熱電阻電極221、222、熔絲電極223、224、接腳24、 發熱電阻線路層25以及熔絲層26係設於該基板21同一表 面上，而該發熱電阻線路層25係與該熔絲層26非重疊設 置’該熔絲層26與其中一發熱電阻電極222係藉由連接線 路23連接。 如第十三圖為本創作之第三實施例，其同樣設有：基 板21、複數電極（發熱電阻電極2 21、2 2 2、溶絲電極2 2 3、 224)、接腳24、發熱電阻線路層25以及熔絲層26，各發 熱電阻電極221、222以及發熱電阻線路層25係設於基^ 之第一表面211，請同時參閱第十四圖所示，而各熔絲電 極223、224以及熔絲層26係設於基板之第二表面212私 請同時參閱第十五圖所示，該第一、第二表面211、212係 相對應没置，该溶絲層26與其中一發熱電阻電極222係^ 由連接組件28連接，該連接組件28設有連接線路281 : 穿孔282以及設於穿孔282中之連接層283，該連接線路 M363674 281設於第二表面21?并〜 則設於其中-發熱電阻絲層26連接’而穿孔282 構祕絲層26與該;22以及連接線路281間，以 最後可進一步在第二 ^ 29。 衣由王體表面覆盍一第三保護層 本創作相較於習有係具有下列優點： 丰跡1、各€極、連接線路以及發熱電阻線路>可梦由嚴 步驟同時成型，其加工較為簡便。 路層了措由早- 2、本創作先進行覆膜後、， 進行第二次覆膜，該第二次覆膜時與電阻;:=二 限於切割口處，所造成電阻值誤差之影響積僅 3、該發熱電阻線路片為呈古恭 八 如败血e⑽叫^^、有低讓溫度係數者（1⑽ 阻；差，維持其電阻值精度。 本創作之技術内容及技術特點已揭示 ^項技術之人士仍可能基於本㈣之揭示㈣各種 不=精神之替換及修飾。因此’本創作之保護範圍應 換及\=—所揭不者’而應包括各種不背離本創作之^ 換及修飾’並為以下之中請專利範圍所涵蓋。 曰 【圖式簡單說明】 f圖係為習有保護元件之結構示意圖。 弟二圖ί為本創作中電阻保險絲結構第-實施例之結構亍 意圖。 啤不 第二圖ί i本觸中電阻保險絲結構第—實_之結構剖 9 M363674 第四圖係為本創作中電阻保險絲結構之電路不意圖。 第五圖係為本創作中電阻保險絲結構之製造方法流程示意 圖。 第六圖至第十一圖係為本創作'中電阻保險絲結構製造流程 之結構不意圖。 弟十一圖係為本創作中電阻保險絲結構第二貫施例之結構 示意圖。 第十三圖係為本創作中電阻保險絲結構第三實施例之結構 示意圖。 第十四圖係為第三實施例中基板第一表面之結構示意圖。 第十五圖係為第三實施例中基板第二表面之結構示意圖。 【主要元件代表符號說明】 保護元件1 基板11 發熱電阻體12 低熔點之熔絲單元13 第一電極141 第二電極142 第三電極143 線路15 接腳16 電阻保險絲結構2 基板21 第一表面211 第二表面212 發熱電阻電極221、222 熔絲電極223、224 連接線路23 接腳24 發熱電阻線路層25 熔絲層2 6 絕緣層261 第一保護層271 切割口 272 第二保護層273 連接組件28 連接線路281 穿孔282 M363674 金屬層31 連接層283 第三保護層29As shown in the twelfth embodiment, the second embodiment of the present invention is also provided with a substrate 21, a plurality of electrodes (heating resistor electrodes 22, 222, fuse electrodes 223, 224), pins 24, and a heating resistor circuit layer 25, The fuse layer 26, and the heating resistor electrodes 221, 222, the fuse electrodes 223, 224, the pins 24, the heating resistor circuit layer 25, and the fuse layer 26 are disposed on the same surface of the substrate 21, and the heating resistor circuit The layer 25 is disposed non-overlapping with the fuse layer 26. The fuse layer 26 and one of the heat generating resistor electrodes 222 are connected by a connection line 23. For example, the thirteenth embodiment is a third embodiment of the present invention, which is also provided with a substrate 21, a plurality of electrodes (heating resistor electrodes 2 21, 2 2 2, solute electrodes 2 2 3, 224), pins 24, and heat generation. The resistance circuit layer 25 and the fuse layer 26, the heating resistor electrodes 221 and 222, and the heating resistor circuit layer 25 are disposed on the first surface 211 of the substrate. Please refer to FIG. 14 at the same time, and the fuse electrodes 223. The 224 and the fuse layer 26 are disposed on the second surface 212 of the substrate. Referring to the fifteenth figure, the first and second surfaces 211 and 212 are correspondingly disposed, and the lyophilized layer 26 is A heating resistor electrode 222 is connected by a connecting component 28. The connecting component 28 is provided with a connecting line 281: a through hole 282 and a connecting layer 283 disposed in the through hole 282. The connecting line M363674 281 is disposed on the second surface 21 and Then, the heating resistor wire layer 26 is connected with the perforation 282 and the wire layer 26 and the connecting line 281, and finally can be further in the second. The clothing is covered by the surface of the king body. The third protective layer has the following advantages compared with Xiyou: The traces 1, the various poles, the connecting lines, and the heating resistor circuit> can be simultaneously formed by strict steps. It's easier. The road layer has been tested early - 2. After the creation of the film, the second film is applied, and the second film is combined with the resistance; := 2 is limited to the cutting mouth, and the resistance value error is caused. The product is only 3, the heating resistor circuit piece is a Gu Gong Ba Ruru e (10) called ^ ^, there is a low temperature coefficient (1 (10) resistance; poor, maintain its resistance value accuracy. The technical content and technical characteristics of this creation have been revealed ^The person of the technology may still be based on the disclosure of (4) (4) various non-spiritual replacements and modifications. Therefore, 'the scope of protection of this creation should be changed to \=-not revealed' and should include all kinds of products that do not deviate from this creation^ Replace and modify 'and is covered by the scope of patents below. 曰 [Simple description of the diagram] f diagram is a schematic diagram of the structure of the protected component. The second diagram is the structure of the resistor fuse in the present invention. Structure is not intended. Beer is not the second picture ί i touch resistance fuse structure - the actual structure of the structure section 9 M363674 The fourth picture is the circuit of the resistance fuse structure in this creation is not intended. The fifth picture is the creation Method for manufacturing resistance fuse structure The schematic diagram of the process. The sixth to eleventh drawings are the structure of the manufacturing process of the medium-resistance fuse structure. The eleventh figure is the structural diagram of the second embodiment of the resistor fuse structure in the creation. The third figure is a schematic structural view of the third embodiment of the structure of the resistor fuse in the present invention. The fourteenth figure is a schematic structural view of the first surface of the substrate in the third embodiment. The fifteenth figure is the substrate of the third embodiment. Schematic diagram of the structure of the two surfaces. [Description of main components and symbols] Protection element 1 Substrate 11 Heating resistor 12 Low melting point fuse unit 13 First electrode 141 Second electrode 142 Third electrode 143 Line 15 Pin 16 Resistance fuse structure 2 Substrate 21 First surface 211 Second surface 212 Heating resistance electrode 221, 222 Fuse electrode 223, 224 Connection line 23 Pin 24 Heating resistor circuit layer 25 Fuse layer 2 6 Insulation layer 261 First protection layer 271 Cutting port 272 Second protective layer 273 Connection assembly 28 Connection line 281 Perforation 282 M363674 Metal layer 31 Connection layer 283 Third protection layer 29
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