[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

TWI838502B - 處理液、圖案形成方法 - Google Patents

處理液、圖案形成方法 Download PDF

Info

Publication number
TWI838502B
TWI838502B TW109110583A TW109110583A TWI838502B TW I838502 B TWI838502 B TW I838502B TW 109110583 A TW109110583 A TW 109110583A TW 109110583 A TW109110583 A TW 109110583A TW I838502 B TWI838502 B TW I838502B
Authority
TW
Taiwan
Prior art keywords
group
solvent
organic solvent
preferred
groups
Prior art date
Application number
TW109110583A
Other languages
English (en)
Chinese (zh)
Other versions
TW202105086A (zh
Inventor
高橋智美
清水哲也
土橋徹
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202105086A publication Critical patent/TW202105086A/zh
Application granted granted Critical
Publication of TWI838502B publication Critical patent/TWI838502B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Chemically Coating (AREA)
TW109110583A 2019-03-29 2020-03-27 處理液、圖案形成方法 TWI838502B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019068449 2019-03-29
JP2019-068449 2019-03-29
JP2020-052346 2020-03-24
JP2020052346 2020-03-24

Publications (2)

Publication Number Publication Date
TW202105086A TW202105086A (zh) 2021-02-01
TWI838502B true TWI838502B (zh) 2024-04-11

Family

ID=72667762

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109110583A TWI838502B (zh) 2019-03-29 2020-03-27 處理液、圖案形成方法

Country Status (3)

Country Link
JP (1) JP7242836B2 (ja)
TW (1) TWI838502B (ja)
WO (1) WO2020203621A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100040972A1 (en) * 2007-04-13 2010-02-18 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
JP2011065105A (ja) * 2009-09-18 2011-03-31 Fujifilm Corp レジストパターン形成方法及びそれに用いられる現像液
EP2637063A2 (en) * 2006-12-25 2013-09-11 Fujifilm Corporation Pattern forming method
TW201506997A (zh) * 2013-07-05 2015-02-16 Fujifilm Corp 圖案形成方法、電子元件的製造方法及電子元件
US20180217499A1 (en) * 2015-09-30 2018-08-02 Fujifilm Corporation Treatment liquid and pattern forming method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6706631B2 (ja) * 2015-12-28 2020-06-10 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2637063A2 (en) * 2006-12-25 2013-09-11 Fujifilm Corporation Pattern forming method
US20100040972A1 (en) * 2007-04-13 2010-02-18 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
JP2011065105A (ja) * 2009-09-18 2011-03-31 Fujifilm Corp レジストパターン形成方法及びそれに用いられる現像液
TW201506997A (zh) * 2013-07-05 2015-02-16 Fujifilm Corp 圖案形成方法、電子元件的製造方法及電子元件
US20180217499A1 (en) * 2015-09-30 2018-08-02 Fujifilm Corporation Treatment liquid and pattern forming method

Also Published As

Publication number Publication date
JP7242836B2 (ja) 2023-03-20
JPWO2020203621A1 (ja) 2020-10-08
WO2020203621A1 (ja) 2020-10-08
TW202105086A (zh) 2021-02-01

Similar Documents

Publication Publication Date Title
TWI827629B (zh) 感光化射線性或感放射線性樹脂組成物、圖案形成方法、電子器件的製造方法、樹脂
TWI725162B (zh) 處理液、其製造方法、圖案形成方法及電子器件的製造方法
CN110537148A (zh) Euv光用感光性组合物、图案形成方法及电子器件的制造方法
KR102206776B1 (ko) 패턴 형성 방법 및 전자 디바이스의 제조 방법
TWI749094B (zh) 處理液及圖案形成方法
TWI801658B (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、電子器件之製造方法及化合物
KR20200128071A (ko) Euv광용 네거티브형 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
WO2019187803A1 (ja) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
TWI811239B (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
TW201823879A (zh) 處理液及圖案形成方法
KR20200110438A (ko) 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지
TWI714811B (zh) 處理液及圖案形成方法
KR102139060B1 (ko) 레지스트 조성물과, 이를 이용한 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법
KR102661154B1 (ko) 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 레지스트막, 전자 디바이스의 제조 방법
TW201912662A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法
TWI838502B (zh) 處理液、圖案形成方法
TWI853907B (zh) 處理液、圖案形成方法
WO2021182182A1 (ja) 処理液、パターン形成方法
JP7544818B2 (ja) リンス液、パターン形成方法
JP7465946B2 (ja) 処理液、パターン形成方法
JP7292378B2 (ja) 処理液、パターン形成方法
JP7376610B2 (ja) 処理液、パターン形成方法
WO2023210579A1 (ja) パターン形成方法、電子デバイスの製造方法
WO2023248933A1 (ja) パターン形成方法、電子デバイスの製造方法、薬液
TW202122432A (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、以及電子元件的製造方法