TWI837552B - Self-burn-in test system for data storage device and method thereof - Google Patents

Abstract

A self-burn-in test system for a data storage device and a method thereof are provided. The self-burn-in test system includes a test vehicle and a test machine. The self-burn-in test method includes: checking hardware settings and status of the data storage device and loading a self-burn-in firmware into the data storage device; installing the data storage device on a high and low temperature test machine through a transfer interface to initialize the self-burn-in firmware and performing a self-burn-in test; checking the hardware settings and status of the data storage device, reading results of the self-burn-in test to determine a level of the data storage device; and checking the hardware settings and status of the data storage device, loading a mass-produced firmware into the data storage device, and checking the level of the data storage device. In this way, it can be avoided that when an error occurs when loading the mass-produced firmware, the results of the self-burn-in test of the data storage device and the level of the data storage device are lost.

Description

Self-burning test system and method for data storage device

The present invention relates to a burn-in test of a data storage device, and in particular to a self-burn-in test system and method of a data storage device.

Traditional data storage devices such as flash drives will load the production version of the firmware after the self-burn-in test is completed. However, if the system is powered off while loading the production version of the firmware, causing errors or damage to the loading of the production version of the firmware, all the test results of the self-burn-in test cannot be read out, and all the test results of the self-burn-in test are lost.

For data storage devices loaded with mass-produced firmware, the number of damaged data blocks in the test results will affect the performance of writing data to the data storage device, the efficiency of garbage collection, the level of the write amplifier indicator (WAI), and the level of the data storage device, thus affecting the level of the data storage device. Therefore, a technology for accurately evaluating the level of the data storage device is needed.

The present invention provides a self-burning test system and method for a data storage device, which can avoid the disadvantage that when the data storage device loads a mass production version firmware after the self-burning test program is completed, if the system power is off and causes the mass production version firmware to be loaded incorrectly or damaged, all the test results of the self-burning test program cannot be read out, thereby losing all the test results of the self-burning test program.

The self-burning test method of the data storage device provided by the present invention is applicable to the self-burning test system. The self-burning test system includes a test carrier and a test machine, wherein the test machine is coupled to the test carrier. The test carrier is loaded with the data storage device. The self-burn-in test method includes the following operations: the test machine checks the hardware settings and status of the data storage device through the test vehicle and loads the self-burn-in firmware into the data storage device; the data storage device is installed on the high and low temperature test machine through the adapter interface to initialize the self-burn-in firmware and execute the self-burn-in test; the test machine checks the hardware settings and status of the data storage device through the test vehicle, reads the result of the self-burn-in test to determine the level of the data storage device; and the test machine checks the hardware settings and status of the data storage device through the test vehicle, loads the mass production version firmware into the data storage device, and checks the level of the data storage device.

The self-burning test system of the data storage device provided by the present invention comprises a test carrier and a test machine. The test carrier is used to load the data storage device. The test machine is coupled to the test carrier. The self-burn-in test method performed by the self-burn-in test system includes the test machine checking the hardware settings and status of the data storage device through the test vehicle and loading the self-burn-in firmware into the data storage device; installing the data storage device on the high and low temperature test machine through the adapter interface to initialize the self-burn-in firmware and perform the self-burn-in test; the test machine checking the hardware settings and status of the data storage device through the test vehicle, reading the results of the self-burn-in test to determine the level of the data storage device; and the test machine checking the hardware settings and status of the data storage device through the test vehicle, loading the mass production version firmware into the data storage device, and checking the level of the data storage device.

The present invention changes the order of loading the mass production version firmware and reading the results of the self-burn-in test to determine the level of the data storage device, thereby avoiding the disadvantage that when the data storage device loads the mass production version firmware after the self-burn-in test program is completed, if the system power is off and causes the mass production version firmware to be loaded incorrectly or damaged, all the test results of the self-burn-in test program cannot be read out, thereby losing all the test results of the self-burn-in test program.

In order to make the above and other purposes, features and advantages of the present invention more clearly understood, the following is a detailed description of the embodiments with reference to the accompanying drawings.

Please refer to FIG. 1, which is a schematic diagram of a self-burning test system provided by an embodiment of the present invention. The self-burning test system 1 includes a test carrier 2 and a test machine 3, wherein the test carrier 2 can be selectively connected to the test machine 3 and communicate with the test machine 3 through a specific communication standard, wherein the specific communication standard can include (but is not limited to) the Serial Advanced Technology Attachment (SATA) standard, the Universal Serial Bus (USB) standard, and the Peripheral Component Interconnect Express (PCIe) standard. The test carrier 2 includes a first control device 21, and one or more slots (not shown) for loading a data storage device 5. When the data storage device 5 is installed in the above-mentioned slot, the data storage device 5 is coupled to the first control device 21. The first control device 21 may include (but not limited to): a microprocessor or a central processing unit (CPU). In addition, the test vehicle 2 may include a read-only memory (not shown) for storing a program code, and the first control device 21 executes the program code to control the access of the data storage device 5. The data storage device 5 may include (but not limited to): various embedded memory devices that comply with the embedded Multi Media Card (eMMC) standard or the Universal Flash Storage (UFS) standard. The test machine 3 includes a second control device 31, a storage device 32, and an input-output device 33, wherein the second control device 31 is coupled to the storage device 32 and the input-output device 33. The storage device 32 is used to store the self-burning test firmware and the mass production version firmware of the data storage device 5, and the input and output device 33 is used to display the relevant information of the self-burning test of the data storage device 5 and provide the tester with an operation interface to operate the test machine 3. In addition, the second control device 31 can selectively load the self-burning test firmware and the mass production version firmware to the data storage device 5 and classify the data storage device 5 according to the operation of the tester. The second control device 31 can include (but is not limited to): a microprocessor or a central processing unit (CPU). The storage device 32 may include (but is not limited to): a portable memory device (such as a memory card that complies with the SD/MMC, CF, MS, XD or UFS standards), a hard disk drive (HDD), a solid state drive (SSD) and/or various embedded memory devices that comply with the UFS and eMMC standards. The input and output device 33 may include (but is not limited to): output devices such as a light emitting diode (LED) screen, a cathode ray tube (CRT) screen, a liquid crystal display (LCD) screen, and input devices such as a keyboard, a mouse and/or a touch panel.

Please refer to Figures 2 to 5, which are schematic diagrams of a data storage device 5, a die, a storage matrix, and a super block of an embodiment of the present invention. The data storage device 5 of the present invention includes a control unit 51 and a data storage medium 52, wherein the data storage medium 52 can be a non-volatile memory, such as a flash memory, MRAM (magnetic RAM), FRAM (ferroelectric RAM), PCM (phase change memory), STTRAM (spin transfer torque RAM), ReRAM (resistive RAM) or a memory resistor capable of storing data for a long time. The data storage medium 52 may include multiple die D0, D1, D2, ..., D(s-1). The control unit 51 uses the chip enable (CE) pin to enable at least one wafer D0, D1, D2, ..., D(s-1) to be accessed. Each wafer D0, D1, D2, ..., D(s-1) includes a plurality of storage matrices PL0, PL1, PL2, ..., PL(t-1). Each storage matrix PL0, PL1, PL2, ..., PL(t-1) includes a plurality of blocks B0, B1, B2, ..., B(z-1). Each block B0, B1, B2, ..., B(z-1) includes a plurality of data pages P0, P1, P2, ..., P(n-1). Each data page P0, P1, P2, ..., P(n-1) includes a plurality of data rows having a data area and a spare area. Each super block SB0, SB1, SB2, ..., SB(z-1) is composed of blocks at the same position in each storage matrix of each wafer of the data storage medium 52. For example, super block SB0 is composed of all blocks B0 in all storage matrices PL0, PL1, PL2, ..., PL(t-1) of each wafer D0, D1, D2, ..., D(s-1), and super block SB1 is composed of all blocks B1 in all storage matrices PL0, PL1, PL2, ..., PL(t-1) of each wafer D0, D1, D2, ..., D(s-1). The composition of other super blocks SB2, ..., SB(z-1) is the same, so they are not repeated here. In addition, n, t, s and z in the above are all positive integers greater than 1.

Please refer to FIG6 , which is a flow chart of the self-burning test method provided by an embodiment of the present invention. In step S1, the second control device 31 checks the hardware settings and status of the data storage device 5 and loads the self-burning firmware to the data storage device 5 through the first control device 21 of the test carrier 2, wherein the hardware settings and status of the data storage device 5 checked by the second control device 31 may include (but not limited to) the identification code (ID) of the data storage device 5, the number of wafers, the hardware version of the embedded multi-media card (EMMC) and its status and function, and the current firmware version, the purpose of which is to check whether the hardware and function of the data storage device 5 are normal. Next, the second control device 31 loads the self-burning firmware into the data storage device 5, wherein the tester can execute the action of loading the self-burning firmware into the data storage device 5 through the user interface displayed by the input/output device 33 to set parameters of the self-burning firmware, such as how many loops to execute, whether to retest, etc.

In step S3, the data storage device 5 is installed on a high and low temperature test machine (not shown) through an adapter interface (not shown) to initialize the self-burning firmware and perform a self-burning test, wherein the adapter interface is a multi-port circuit board for installing multiple data storage devices 5, and the definition of initialization is that the high and low temperature test machine provides power to the data storage device 5 through the adapter interface, provides a clock signal to the data storage device 5, and makes the data storage device 5 enter the boot mode. In this way, the self-burning test is performed on the data storage device 5 to record the result of the self-burning test of the data storage device 5. In addition, it can be noted that the result of the self-burn-in test of the data storage device 5 will be stored in a block of the data storage device 5, so that when the data storage device 5 is removed from the adapter interface and reinstalled on the slot of the test carrier 2 after the self-burn-in test is completed, the second control device 31 can read the result of the self-burn-in test through the first control device 21.

In step S5, the second control device 31 checks the hardware settings and status of the data storage device 5 through the first control device 21 of the test vehicle 2, and reads the result of the self-burn-in test to determine the level of the data storage device 5, wherein the result of the self-burn-in test includes the numbers of all damaged blocks in the data storage device 5. Then, the second control device 31 can calculate the total number of damaged blocks in the data storage device 5 according to the numbers of all damaged blocks in the data storage device 5, and determine the level of the data storage device 5 accordingly. In another embodiment, the second control device 31 can calculate the total number of damaged blocks in each storage matrix of each wafer in the data storage device 5 according to the numbers of all damaged blocks in the data storage device 5, and then calculate the total number of damaged super blocks in the data storage device 5, and judge the level of the data storage device 5 accordingly.

Finally, in step S7, the second control device 31 checks the hardware settings and status of the data storage device 5, loads the mass production version firmware into the data storage device 5, and checks the level of the data storage device 5 through the first control device 21 of the test vehicle 2, wherein the second control device 31 checks the hardware settings, status and level of the data storage device 5 for the purpose of confirming whether the hardware settings, status and level of the data storage device 5 are correct.

Please refer to FIG. 7, which is a flow chart of reading the result of the self-burn-in test to determine the level of the data storage device provided by an embodiment of the present invention. The second control device 31 of step S5 reads the result of the self-burn-in test to determine the level of the data storage device 5, including the following operations: In step S11, the second control device 31 determines whether the total number of damaged blocks in the data storage device 5 is less than or equal to the first critical value, wherein the total number of damaged blocks in the data storage device 5 is equal to the number of damaged blocks added after the self-burn-in test of the data storage device 5 plus the number of damaged blocks when the data storage device 5 leaves the factory. It should be noted that those skilled in the art can define the value of the first critical value according to the hardware and process of the data storage device 5.

In step S13, when it is determined that the total number of damaged blocks in the data storage device 5 is less than or equal to the first critical value, it is determined whether the number of damaged blocks newly added after the self-burn-in test of the data storage device 5 is less than or equal to the second critical value. Preferably, the second critical value is 0, that is, the number of damaged blocks newly added after the self-burn-in test of the data storage device 5 is preferably 0, and the total number of damaged blocks in the data storage device 5 only includes the number of damaged blocks when the data storage device 5 leaves the factory. It should be noted that a person skilled in the art can define the value of the second critical value according to the hardware and process of the data storage device 5, so the present invention is not limited to the above value.

In step S15, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is less than or equal to the second critical value, the data storage device 5 is determined to belong to the first level. That is, when the data storage device 5 is determined to belong to the first level, it means that the total number of damaged blocks of the data storage device 5 is the smallest, so that the performance of writing data to the data storage device 5, the efficiency of garbage collection, and the effect of reducing the write amplification indicator (WAI) can be achieved.

In step S17, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is greater than the second critical value, it is determined that the data storage device 5 belongs to the second level. That is, compared with the first level data storage device 5, the second level data storage device 5 has more damaged blocks, so the performance of writing data to the second level data storage device 5, the efficiency of garbage collection, and the effect of write amplification index (WAI) are poor.

In step S19, when it is determined that the total number of damaged blocks in the data storage device 5 is greater than the first critical value, it is determined whether the number of damaged blocks added after the self-burn-in test of the data storage device 5 is less than or equal to the second critical value.

In step S21, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is less than or equal to the second critical value, the data storage device 5 is determined to belong to the third level. That is, compared with the second level data storage device 5, the third level data storage device 5 has more damaged blocks, so the performance of writing data to the third level data storage device 5, the efficiency of garbage collection, and the effect of write amplification indicator (WAI) are poor.

In step S23, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is greater than the second critical value, it is determined that the data storage device 5 belongs to the fourth level. That is, compared with the third level data storage device 5, the fourth level data storage device 5 has more damaged blocks, so the performance of writing data to the fourth level data storage device 5, the efficiency of garbage collection, and the effect of write amplification index (WAI) are poor.

Please refer to FIG8, which is a flow chart of reading the result of the self-burnout test to determine the level of the data storage device provided by another embodiment of the present invention. The second control device 31 of step S5 reads the result of the self-burnout test to determine the level of the data storage device 5, including the following operations: In step S31, the second control device 31 determines whether the total number of damaged super blocks in the data storage device 5 is less than or equal to the third critical value. It can be noted that the technical personnel in this field can define the value of the third critical value according to the hardware and process of the data storage device 5.

In one embodiment, when a block is judged as a damaged block, the superblock containing the damaged block is also judged as a damaged superblock. The total number of damaged superblocks in the data storage device 5 is the number of good superblocks combined by excluding the number of damaged superblocks from the good blocks of different storage matrices of all damaged superblocks. Taking FIG. 9 as an example, it is assumed that the data storage device 5 includes two wafers D0 and D1, each wafer includes two storage matrices PL0 and PL1, and the super blocks in the self-burn-in test result of the data storage device 5 include three damaged super blocks SB(i), SB(i+1), SB(i+2), and the three damaged super blocks SB(i), SB(i+1), SB(i+2) include good blocks G1-G7 and damaged block B 1-B5, the control device 4 selects one of the good blocks such as (G1, G2, G5, G3), (G6, G2, G5, G3), (G1, G4, G5, G3), (G6, G4, G5, G3), (G1, G2, G7, G3), (G6, G2, G7, G3), (G1, G4, G7, G3) and (G6, G4, G7, G3) in different storage matrices to form a good super block. That is to say, the original number of damaged superblocks is 3, and the good blocks in different storage matrices of these 3 damaged superblocks can form 1 good superblock, so the total number of damaged superblocks is 3-1=2 damaged superblocks.

In another embodiment, the total number of damaged super blocks in the data storage device 5 is equal to the maximum number of damaged blocks in each storage matrix in each chip. Specifically, the second control device 31 can find a storage matrix with the maximum number of damaged blocks according to the number of damaged blocks, and use the number of damaged blocks in the storage matrix as the total number of damaged super blocks. Taking FIG. 9 as an example, the three damaged super blocks SB(i), SB(i+1), and SB(i+2) respectively include good blocks G1-G7 and damaged blocks B1-B5. The second control device 31 selects the storage matrix with the most damaged blocks according to the numbers of the damaged blocks. For example, the storage matrix PL1 in the wafer D1 has two damaged blocks B3 and B5, so as to obtain the number of damaged blocks in the storage matrix PL1 as the total number of damaged super blocks, that is, 2 damaged super blocks.

Next, as shown in FIG8 , in step S33, when it is determined that the total number of damaged super blocks in the data storage device 5 is less than or equal to the third critical value, it is determined whether the number of damaged blocks added after the self-burn-in test of the data storage device 5 is less than or equal to the second critical value. Preferably, the second critical value is 0. It can be noted that a person skilled in the art can define the value of the second critical value according to the hardware and process of the data storage device 5, so the present case is not limited to the above value.

In step S35, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is less than or equal to the second critical value, the data storage device 5 is determined to belong to the first level. That is, when the data storage device 5 is determined to belong to the first level, it means that the total number of damaged blocks of the data storage device 5 is the smallest, so that the performance of writing data to the data storage device 5, the efficiency of garbage collection, and the effect of reducing the write amplification indicator (WAI) can be achieved.

In step S37, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is greater than the second critical value, it is determined that the data storage device 5 belongs to the second level. That is, compared with the first level data storage device 5, the second level data storage device 5 has more damaged blocks, so the performance of writing data to the second level data storage device 5, the efficiency of garbage collection, and the effect of write amplification index (WAI) are poor.

In step S39, when it is determined that the total number of damaged super blocks in the data storage device 5 is greater than the third critical value, it is determined whether the number of damaged blocks added after the self-burn-in test of the data storage device 5 is less than or equal to the second critical value.

In step S41, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is less than or equal to the second critical value, the data storage device 5 is determined to belong to the third level. That is, compared with the second level data storage device 5, the third level data storage device 5 has more damaged blocks, so the performance of writing data to the third level data storage device 5, the efficiency of garbage collection, and the effect of write amplification index (WAI) are poor.

In step S43, when it is determined that the number of damaged blocks added after the self-burn test of the data storage device 5 is greater than the second critical value, it is determined that the data storage device 5 belongs to the fourth level. That is, compared with the third level data storage device 5, the fourth level data storage device 5 has more damaged blocks, so the performance of writing data to the fourth level data storage device 5, the efficiency of garbage collection, and the effect of write amplification index (WAI) are poor.

In summary, the present invention changes the order of loading the mass production version firmware and reading the results of the self-burn-in test to determine the level of the data storage device, thereby avoiding the disadvantage that when the data storage device loads the mass production version firmware after the self-burn-in test program is completed, if the system power is off and causes the mass production version firmware to be loaded incorrectly or damaged, all the test results of the self-burn-in test program cannot be read out, thereby losing all the test results of the self-burn-in test program. At the same time, the present invention also provides a method for accurately determining the number of damaged super blocks and damaged blocks to improve the performance of writing data to a data storage device, the efficiency of garbage collection, the effect of reducing the write amplifier indicator (WAI), and the classification of data storage devices at the same time.

Although the present invention has been disclosed as above by way of embodiments, they are not intended to limit the present invention. A person having ordinary knowledge in the technical field to which the present invention belongs may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.

1: Self-burn test system 2: Test vehicle 3: Test machine 5: Data storage device 21: First control device 31: Second control device 32: Storage device 33: Input/output device 51: Control unit 52: Data storage medium G1, G2, G3, G4, G5, G6, G7: Good blocks G1-G7 B1, B2, B3, B4, B5: Damaged blocks SB(i), SB(i+1), SB(i+2): Damaged super blocks D0, D1, D2, ..., D(s-1): Wafer PL0, PL1, PL2, ..., PL(t-1): Storage matrix B0, B1, B2, ..., B(z-1): blocks P0, P1, P2, ..., P(n-1): data pages SB0, SB1, SB2, ..., SB(z-1): super blocks S1, S3, S5, S7, S11, S13, S15, S17, S19, S21, S23, S31, S33, S35, S37, S39, S41, S43: steps

FIG1 is a schematic diagram of a self-burn-in test system provided by an embodiment of the present invention; FIG2 is a schematic diagram of a data storage device provided by an embodiment of the present invention; FIG3 is a schematic diagram of a wafer provided by an embodiment of the present invention; FIG4 is a schematic diagram of a storage matrix provided by an embodiment of the present invention; FIG5 is a schematic diagram of a super block provided by an embodiment of the present invention; FIG6 is a flow chart of a self-burn-in test method provided by an embodiment of the present invention; FIG7 is a flow chart of reading the result of a self-burn-in test to determine the level of a data storage device provided by an embodiment of the present invention; FIG8 is a flow chart of reading the result of a self-burn-in test to determine the level of a data storage device provided by another embodiment of the present invention; and FIG9 is a schematic diagram of calculating the total number of damaged superblocks in a data storage device provided by an embodiment of the present invention.

S1, S3, S5, S7: Steps

Claims (22)

A self-burning test method for a data storage device is applicable to a self-burning test system. The self-burning test system includes a test carrier and a test machine, wherein the test machine is coupled to the test carrier, and the test carrier loads the data storage device. The self-burning test method includes the following operations: the test machine checks a hardware setting and state of the data storage device through the test carrier and loads a self-burning firmware to the data storage device. The data storage device is installed on a high and low temperature test machine through an adapter interface to initialize the self-burning firmware and execute a self-burning test; the test machine checks the hardware settings and status of the data storage device through the test vehicle, reads the result of the self-burning test to determine a level of the data storage device; and the test machine checks the hardware settings and status of the data storage device through the test vehicle. state, loading a mass production version of firmware into the data storage device, and checking the level of the data storage device; wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: determining whether the total number of damaged blocks in the data storage device is less than or equal to a first critical value; when it is determined that the total number of damaged blocks in the data storage device is less than or equal to the first critical value, determining that the self-burn-in test is completed. Whether the number of the newly added damaged blocks is less than or equal to a second critical value; and when it is judged that the number of the newly added damaged blocks after the self-burn-in test is less than or equal to the second critical value, the data storage device is judged to belong to a first level; wherein the total number of the damaged blocks in the data storage device is equal to the number of the newly added damaged blocks after the self-burn-in test plus the number of the damaged blocks when the data storage device leaves the factory. The self-burn-in test method as described in claim 1, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, determining that the data storage device belongs to a second level. The self-burnout test method as described in claim 2, wherein reading the result of the self-burnout test to determine the level of the data storage device includes: when it is determined that the total number of damaged blocks in the data storage device is greater than the first critical value, determining whether the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value; and when it is determined that the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value, determining that the data storage device belongs to a third level. The self-burn-in test method as described in claim 3, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, determining that the data storage device belongs to a fourth level. The self-burning test method as described in claim 1, wherein the second critical value is 0. A self-burning test method for a data storage device is applicable to a self-burning test system. The self-burning test system includes a test carrier and a test machine, wherein the test machine is coupled to the test carrier, and the test carrier carries the data storage device. The self-burning test method includes the following operations: the test machine checks a hardware setting and status and load a self-burning firmware to the data storage device; install the data storage device on a high and low temperature test machine through an adapter interface to initialize the self-burning firmware and perform a self-burning test; the test machine checks the hardware settings and status of the data storage device through the test carrier, reads the result of the self-burning test to determine the first level of the data storage device ; and the test machine checks the hardware setting and status of the data storage device through the test vehicle, loads a mass production version of firmware into the data storage device, and checks the level of the data storage device; wherein reading the result of the self-burning test to determine the level of the data storage device includes: determining whether the total number of damaged super blocks in the data storage device is less than or equal to a first critical When it is determined that the total number of damaged super blocks in the data storage device is less than or equal to the first critical value, it is determined whether the number of damaged blocks added after the self-burn-in test is less than or equal to a second critical value; and when it is determined that the number of damaged blocks added after the self-burn-in test is less than or equal to the second critical value, it is determined that the data storage device belongs to a first level. The self-burn-in test method as described in claim 6, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, determining that the data storage device belongs to a second level. The self-burnout test method as described in claim 7, wherein reading the result of the self-burnout test to determine the level of the data storage device includes: when it is determined that the total number of damaged super blocks in the data storage device is greater than the first critical value, determining whether the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value; and when it is determined that the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value, determining that the data storage device belongs to a third level. The self-burn-in test method as described in claim 8, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, determining that the data storage device belongs to a fourth level. The self-burn-in test method as described in claim 6, wherein the total number of the damaged super blocks in the data storage device is the number of good super blocks combined with the number of the damaged super blocks excluding the number of good blocks in different storage matrices of all the damaged super blocks. A self-burn-in test method as described in claim 6, wherein the total number of damaged superblocks in the data storage device is equal to the maximum number of damaged blocks that a storage matrix has among all the damaged superblocks. A self-burning test system for a data storage device includes: a test carrier for loading the data storage device; and a test machine coupled to the test carrier; wherein the self-burning test system performs a self-burning test method including: the test machine checks a hardware setting and state of the data storage device through the test carrier and loads a self-burning firmware into the data storage device; and transmits the self-burning firmware to the data storage device through a transfer interface. The data storage device is installed on a high and low temperature test machine to initialize the self-burning firmware and perform a self-burning test; the test machine checks the hardware settings and status of the data storage device through the test vehicle, reads the result of the self-burning test to determine a level of the data storage device; and the test machine checks the hardware settings and status of the data storage device through the test vehicle, loads a mass production version firmware in the data storage device, and checking the level of the data storage device; wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: determining whether the total number of damaged blocks in the data storage device is less than or equal to a first critical value; when it is determined that the total number of damaged blocks in the data storage device is less than or equal to the first critical value, determining whether the newly added damaged blocks after the self-burn-in test are Whether the number of damaged blocks is less than or equal to a second critical value; and when it is judged that the number of damaged blocks added after the self-burn-in test is less than or equal to the second critical value, the data storage device is judged to belong to a first level; wherein the total number of damaged blocks in the data storage device is equal to the number of damaged blocks added after the self-burn-in test plus the number of damaged blocks when the data storage device leaves the factory. The self-burn-in test system as described in claim 12, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, the data storage device is determined to belong to a second level. The self-burnout test system as described in claim 13, wherein reading the result of the self-burnout test to determine the level of the data storage device includes: when it is determined that the total number of damaged blocks in the data storage device is greater than the first critical value, determining whether the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value; and When it is determined that the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value, determining that the data storage device belongs to a third level. The self-burn-in test system as described in claim 14, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, the data storage device is determined to belong to a fourth level. A self-burning test system as described in claim 12, wherein the second critical value is 0. A self-burning test system for a data storage device includes: a test carrier for loading the data storage device; and a test machine coupled to the test carrier; wherein the self-burning test system performs a self-burning test method including: the test machine checks a hardware setting and state of the data storage device through the test carrier and loads a self-burning firmware to The data storage device; the data storage device is installed on a high and low temperature test machine through a conversion interface to initialize the self-burning firmware and execute a self-burning test; the test machine checks the hardware settings and status of the data storage device through the test carrier, reads the result of the self-burning test to determine a level of the data storage device; and the test machine passes the The test vehicle checks the hardware settings and status of the data storage device, loads a mass production version of firmware into the data storage device, and checks the level of the data storage device; wherein reading the result of the self-burn test to determine the level of the data storage device includes: determining whether the total number of damaged super blocks in the data storage device is less than or equal to a first critical value; When When it is determined that the total number of damaged super blocks in the data storage device is less than or equal to the first critical value, it is determined whether the number of damaged blocks newly added after the self-burn-in test is less than or equal to a second critical value; and when it is determined that the number of damaged blocks newly added after the self-burn-in test is less than or equal to the second critical value, it is determined that the data storage device belongs to a first level. The self-burn-in test system as described in claim 17, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, the data storage device is determined to belong to a second level. The self-burnout test system as described in claim 18, wherein reading the result of the self-burnout test to determine the level of the data storage device includes: when it is determined that the total number of damaged super blocks in the data storage device is greater than the first critical value, determining whether the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value; and when it is determined that the number of damaged blocks added after the self-burnout test is less than or equal to the second critical value, determining that the data storage device belongs to a third level. The self-burn-in test system as described in claim 19, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: when it is determined that the number of damaged blocks added after the self-burn-in test is greater than the second critical value, the data storage device is determined to belong to a fourth level. A self-burn-in test system as described in claim 17, wherein the total number of the damaged superblocks in the data storage device is the number of good superblocks combined by excluding the number of the damaged superblocks from the good blocks in different storage matrices of all the damaged superblocks. A self-burn-in test system as described in claim 17, wherein the total number of damaged superblocks in the data storage device is equal to the maximum number of damaged blocks that a storage matrix has among all the damaged superblocks.

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