TWI834229B - Substrate processing method and substrate processing device - Google Patents

Abstract

The substrate processing method of the present invention includes: an SPM process, which supplies SPM to the front surface of the substrate held in a horizontal posture by a substrate holding unit with the front surface of the substrate facing upward; and an SPM reduction process, which is continued from the above-mentioned SPM process. At the end of the process, the SPM is not supplied to the front surface of the above-mentioned substrate, but the above-mentioned substrate is rotated around the rotation axis passing through the central part of the above-mentioned substrate, whereby the SPM is discharged from the front surface of the above-mentioned substrate, thereby removing the SPM present on the front surface of the above-mentioned substrate. The amount is reduced to an extent that the front side of the substrate will not be dried; and a rinsing process, which is to supply a rinsing liquid containing water to the front side of the substrate after the SPM reduction process.

Description

Substrate processing method and substrate processing device

The invention relates to a substrate processing method and a substrate processing device. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for optical magnetic disks. Substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.

Previously, a sulfuric acid/hydrogen peroxide mixture (sulfuric acid/hydrogen peroxide mixture containing H ₂ SO ₄ (sulfuric acid) and H ₂ O ₂ (hydrogen peroxide water)) was disclosed by supplying high-temperature SPM to the front side of the substrate. )) to remove the resist from the front surface of the substrate (see, for example, Patent Document 1 below). A single-wafer substrate processing apparatus that performs such processing using SPM includes a spin chuck that holds and rotates the substrate substantially horizontally, and a nozzle for supplying a processing liquid to the substrate rotated by the spin chuck. In a substrate processing apparatus, an SPM process is performed in which high-temperature SPM is supplied to a substrate held by a rotating chuck. Thereafter, a rinsing process of supplying rinsing liquid to the substrate is performed. [Prior art documents] [Patent documents]

[Patent Document 1] Japanese Patent Application Publication No. 2010-10422

[Problem to be solved by the invention]

After the SPM process in Patent Document 1, SPM exists on the front side of the substrate. If the rinse liquid is supplied to the front side of the substrate during the rinse process that is performed following the SPM process, there is a risk that the SPM present on the front side of the substrate will react with the rinse liquid, thereby generating a large amount of SPM smoke. If the gas atmosphere containing SPM smoke flows out of the processing cup through the upper opening of the processing cup and diffuses into the interior of the chamber, the gas atmosphere containing SPM smoke will turn into particles and adhere to the substrate, causing contamination to the substrate. , or cause pollution to the inner wall of the chamber. Therefore, it is desirable to suppress or prevent the gas atmosphere containing the smoke of SPM from spreading to the surroundings.

In addition, due to the large reaction heat generated by SPM due to the reaction between sulfuric acid and hydrogen peroxide water, the temperature will rise to a temperature higher than the liquid temperature of sulfuric acid. Therefore, if a low-temperature rinse liquid is supplied to the front surface of the substrate that has become high temperature due to the supply of SPM after the supply of SPM to the front surface of the substrate is completed, the temperature of the front surface of the substrate will drop rapidly, and the pattern formed on the front surface of the substrate will be affected. etc. causing thermal shock. This thermal shock is believed to be one of the causes of pattern collapse.

One object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can suppress the diffusion of a gas atmosphere containing SPM smoke to the surroundings.

Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can suppress thermal shock accompanying the supply of rinse liquid, thereby suppressing or preventing damage to the front surface of the substrate. [Technical means to solve problems]

The present invention provides a substrate processing method, which includes: an SPM process, which supplies SPM to the front side of the substrate held in a horizontal posture by a substrate holding unit with the front side of the substrate facing upward; and an SPM reduction process, which is continued. At the end of the above-mentioned SPM process, the SPM is not supplied to the front surface of the above-mentioned substrate, but the above-mentioned substrate is rotated around the rotation axis passing through the central part of the above-mentioned substrate, thereby causing the SPM to be discharged from the front surface of the above-mentioned substrate, thereby discharging the SPM present on the front surface of the above-mentioned substrate. The amount of SPM is reduced to a level that does not dry the front side of the substrate; and a rinsing process, which supplies a rinsing liquid containing water to the front side of the substrate after the SPM reduction process.

Since the flushing liquid is supplied to the high-temperature SPM, a large amount of smoke may be generated around the front surface of the substrate.

According to this method, following the end of the SPM process and earlier than the start of the rinse process, the SPM is not supplied to the front side of the substrate but the substrate is rotated, so that the SPM is discharged from the front side of the substrate. Thereby, before starting the rinsing process, the amount of high-temperature SPM present on the front side of the substrate can be reduced to a level that will not dry the front side of the substrate. Since the flushing process is started after reducing the amount of high-temperature SPM present on the front side of the substrate, the amount of SPM smoke generated around the front side of the substrate can be suppressed during the flushing process. This can suppress the gas atmosphere containing SPM smoke from spreading to the surroundings.

In addition, the amount of high-temperature SPM existing on the front surface of the substrate is reduced, thereby lowering the substrate temperature. In addition, by rotating (idling) the substrate, the contact area per unit time between the substrate and the surrounding gas atmosphere increases. Through these factors, the substrate is cooled. Therefore, the rinse process can be started in a state where the temperature is lower than at the end of the SPM process. This makes it possible to suppress thermal shock associated with supply of the rinse liquid, thereby suppressing or preventing damage to the front surface of the substrate.

In one embodiment of the present invention, the above-mentioned substrate processing method further includes a backside coolant supply process, and the above-mentioned backside coolant supply process is in parallel with the above-mentioned SPM reduction process. The backside of the above-mentioned substrate is opposite to the front side. A coolant with a low SPM and a liquid temperature is supplied to the front surface of the above-mentioned substrate.

According to this method, the cooling liquid is supplied to the back surface of the substrate in parallel with the SPM reduction process (back surface cooling liquid supply process). Therefore, the SPM existing on the front side of the substrate can be cooled during the SPM reduction process. Therefore, the temperature of the SPM existing on the front side of the substrate when the rinse process starts can be lowered. As the SPM becomes high temperature, the amount of smoke produced by the SPM increases. Thereby, the amount of SPM smoke generated around the front surface of the substrate can be further suppressed during the rinse process.

In addition, since the cooling liquid is supplied to the back surface of the substrate, the temperature of the substrate can be lowered before starting the rinsing process. Therefore, the rinsing process can be started after the temperature of the substrate is sufficiently lowered. Thereby, it is possible to further suppress the thermal shock caused by the supply of the rinse liquid, thereby more effectively suppressing or preventing damage to the front surface of the substrate.

In one embodiment of the present invention, the back surface cooling liquid supply process includes a center portion discharging process of discharging the cooling liquid toward a center portion of the back surface of the substrate, and a center portion discharging process toward a peripheral edge of the back surface of the substrate in parallel with the center portion discharging process. The peripheral part spraying process of spraying the above-mentioned coolant.

According to this method, the cooling liquid is supplied to the center portion of the back surface of the substrate and the peripheral portion of the back surface of the substrate in parallel with the SPM reduction process. Thereby, the substrate can be cooled uniformly.

In addition, the cooling liquid may have a higher liquid temperature than the flushing liquid.

According to this method, before supplying the rinse liquid to the substrate, the cooling liquid having a higher liquid temperature than the rinse liquid is supplied to the substrate. Therefore, by sequentially performing cooling using the cooling liquid and cooling using the rinse liquid, the temperature of the substrate can be lowered in stages. Thereby, the occurrence of thermal shock can be further suppressed.

Furthermore, the cooling liquid may have the same liquid temperature as the flushing liquid.

According to this method, since the temperature of the coolant supplied to the back surface of the substrate is the same as that of the rinse liquid, the liquid temperature of the SPM present on the front surface of the substrate can be further lowered. Since the flushing process is started after the liquid temperature of the SPM present on the front side of the substrate is sufficiently lowered, the amount of SPM smoke generated around the front side of the substrate can be further suppressed during the flushing process.

In one embodiment of the present invention, the above-mentioned rinsing process is started after the temperature of the front surface of the above-mentioned substrate is reduced to a specific low temperature through an SPM reduction process.

According to this method, the rinsing process is started after lowering to a specific low temperature. Therefore, the SPM existing on the front side of the substrate can be cooled during the SPM reduction process. Therefore, the temperature of the SPM existing on the front side of the substrate when the rinse process starts can be lowered. Thereby, the amount of SPM smoke generated around the front surface of the substrate can be further suppressed during the rinse process.

In this case, it further includes a temperature detection process of using a temperature sensor to detect the temperature of the substrate in parallel with the SPM reduction process. Moreover, when the detected temperature reaches the specific low temperature, the SPM reduction process ends and the flushing process starts.

According to this method, when the temperature detected by the temperature sensor reaches the above-mentioned specific low temperature, the rinsing process starts. Thereby, the rinse process can be started after the temperature of the SPM existing on the front side of the substrate is reliably lowered to a specific low temperature. Thereby, the amount of SPM smoke generated around the front surface of the substrate can be further suppressed during the rinse process.

In one embodiment of the present invention, the substrate processing method further includes a first substrate rotation process of rotating the substrate around the rotation axis in parallel with the SPM process, and the SPM reduction process includes rotating the substrate with the first substrate. 1. A process in which the substrate rotation process is the same or at a faster rotation speed than the above-mentioned first substrate rotation process.

According to this method, in the SPM reduction process, the substrate is rotated at a rotation speed that is the same as or faster than the first substrate rotation process. Therefore, the centrifugal force acting on the SPM present on the front side of the substrate increases. This can promote the discharge of SPM from the front surface of the substrate and the like.

In one embodiment of the present invention, the above-mentioned substrate processing method further includes: a second substrate rotation process, which is performed in parallel with the above-mentioned rinsing process to rotate the above-mentioned substrate around the above-mentioned rotation axis; and an in-baffle exhaust process, which is performed in parallel with the above-mentioned rinsing process. The above-mentioned SPM reduction process and the above-mentioned flushing process are performed in parallel to exhaust the inside of the processing cup that has a cylindrical baffle surrounding the above-mentioned substrate holding unit and accommodating the substrate holding unit; the first height maintenance process is In parallel with the above-mentioned flushing process, the above-mentioned baffle is maintained at a first height position; and in a second height maintenance process, in parallel with the above-mentioned SPM reduction process, the above-mentioned baffle is maintained at a higher position than the above-mentioned first height position. 2 height positions.

According to this method, the inside of the treatment cup is exhausted in parallel with the SPM reduction process and the flushing process. In addition, in parallel with the SPM reduction process, the baffle is maintained at the second height position. Then, in parallel with the rinsing process after the SPM reduction process, the baffle is maintained at the first height position.

When SPM is supplied to the front side of the substrate, a large amount of SPM smoke will be generated around the front side of the substrate. In addition, during the rinse process, SPM smoke will be generated around the front face of the substrate due to the reaction between the SPM present on the front face of the substrate and the rinse liquid. In the SPM reduction process, the baffle is arranged at the second height position, and the inside of the processing cup is exhausted. In the SPM reduction process, by keeping the supply of SPM stopped, the amount of SPM smoke existing around the substrate is reduced. That is, the supply of the rinse liquid to the front surface of the substrate can be started in a state where the amount of SPM smoke existing around the front surface of the substrate is reduced. Therefore, even if the SPM smoke is generated as the rinse liquid is supplied to the front surface of the substrate, the gas atmosphere containing the SPM smoke will not flow out of the processing cup. This can suppress the gas atmosphere containing SPM smoke from spreading to the surroundings.

In one embodiment of the present invention, the above-mentioned substrate processing method may further include a process of supplying SC1 to the front surface of the above-mentioned substrate after the above-mentioned rinsing process.

According to this method, the resist residue adhering to the front surface of the substrate can be successfully removed. In addition, the sulfur component remaining on the front surface of the substrate can also be effectively removed.

The present invention provides a substrate processing apparatus, which includes: a substrate holding unit that holds the substrate in a horizontal posture with the front side of the substrate facing upward; and a rotating unit that allows the substrate held by the substrate holding unit to pass around. The rotation axis of the central part of the substrate rotates; an SPM supply unit for supplying SPM to the front surface of the substrate held by the substrate holding unit; a rinse liquid supply unit for supplying SPM to the front surface of the substrate held by the substrate holding unit Supplying a rinse liquid containing water; and a control device that controls the above-mentioned rotation unit, the above-mentioned SPM supply unit, and the above-mentioned rinse liquid supply unit; and the above-mentioned control device executes: an SPM process, which utilizes the above-mentioned SPM supply unit to supply the above-mentioned substrate with a rinse liquid. The front-side supply SPM; the SPM reduction process is continued after the end of the above-mentioned SPM process. SPM is not supplied to the front side of the above-mentioned substrate, and the above-mentioned rotation unit is used to rotate the above-mentioned substrate around the rotation axis passing through the central part of the above-mentioned substrate, thereby making the substrate rotate. SPM is discharged from the front side of the above-mentioned substrate, thereby reducing the amount of SPM present on the front side of the above-mentioned substrate to a level that will not dry the front side of the above-mentioned substrate; and a rinsing process, which uses the above-mentioned rinsing liquid after the above-mentioned SPM reduction process. The supply unit supplies the rinse liquid to the front surface of the substrate.

Since the flushing liquid is supplied to the high-temperature SPM, a large amount of smoke may be generated around the front surface of the substrate.

According to this structure, following the end of the SPM process and earlier than the start of the rinse process, the SPM is not supplied to the front surface of the substrate but the substrate is rotated, so that the SPM is discharged from the front surface of the substrate. Thereby, before starting the rinsing process, the amount of high-temperature SPM present on the front side of the substrate can be reduced to a level that will not dry the front side of the substrate. Since the flushing process is started after reducing the amount of high-temperature SPM present on the front side of the substrate, the amount of SPM smoke generated around the front side of the substrate can be suppressed during the flushing process. This can suppress the gas atmosphere containing SPM smoke from spreading to the surroundings.

In addition, the amount of high-temperature SPM existing on the front surface of the substrate is reduced, thereby lowering the substrate temperature. In addition, by rotating (idling) the substrate, the contact area per unit time between the substrate and the surrounding gas atmosphere increases. Through these factors, the substrate is cooled. Therefore, the rinse process can be started in a state where the temperature is lower than at the end of the SPM process. This makes it possible to suppress thermal shock associated with supply of the rinse liquid, thereby suppressing or preventing damage to the front surface of the substrate.

In one embodiment of the present invention, the substrate processing apparatus further includes a coolant supply unit, and the coolant supply unit supplies a back surface of the substrate opposite to the front surface with a lower SPM than the SPM supplied to the front surface of the substrate. Coolant at liquid temperature. Furthermore, the control device further executes a back surface coolant supply process of supplying the coolant using the coolant supply unit in parallel with the SPM reduction process.

According to this configuration, the cooling liquid is supplied to the back surface of the substrate in parallel with the SPM reduction process (back surface cooling liquid supply process). Therefore, the SPM existing on the front side of the substrate can be cooled during the SPM reduction process. Therefore, the temperature of the SPM existing on the front side of the substrate when the rinse process starts can be lowered. As the SPM becomes high temperature, the amount of smoke produced by the SPM increases. Thereby, the amount of SPM smoke generated around the front surface of the substrate can be further suppressed during the rinse process.

In addition, since the cooling liquid is supplied to the back surface of the substrate, the temperature of the substrate can be lowered before starting the rinsing process. Therefore, the rinsing process can be started after the temperature of the substrate is sufficiently lowered. Thereby, it is possible to further suppress the thermal shock caused by the supply of the rinse liquid, thereby more effectively suppressing or preventing damage to the front surface of the substrate.

In one embodiment of the present invention, the coolant supply unit has a central ejection port facing the central part of the back surface of the substrate held by the substrate holding unit, and a central discharge port facing the back surface of the substrate held by the substrate holding unit. The peripheral part ejection port faces the peripheral part. Furthermore, in the back surface coolant supply process, the control device executes a center discharge process of discharging the coolant from the center discharge port toward the center of the back surface of the substrate, and in parallel with the center discharge process, A peripheral portion discharging process in which the peripheral portion discharge port discharges the cooling liquid toward the peripheral portion of the back surface of the substrate.

According to this configuration, the cooling liquid is supplied to the center portion of the back surface of the substrate and the peripheral portion of the back surface of the substrate in parallel with the PM reduction process. Thereby, the substrate can be cooled uniformly.

The above-mentioned coolant may also have a liquid temperature higher than normal temperature.

According to this configuration, before the rinse liquid is supplied to the substrate, the cooling liquid having a higher liquid temperature than the rinse liquid is supplied to the substrate. Therefore, by sequentially performing cooling using the cooling liquid and cooling using the rinse liquid, the temperature of the substrate can be lowered in stages. Thereby, the occurrence of thermal shock can be further suppressed.

Furthermore, the cooling liquid may have the same liquid temperature as the flushing liquid.

According to this configuration, the temperature of the coolant supplied to the back surface of the substrate is the same as that of the rinse liquid, so the liquid temperature of the SPM present on the front surface of the substrate can be further lowered. Since the flushing process is started after the liquid temperature of the SPM present on the front side of the substrate is sufficiently lowered, the amount of SPM smoke generated around the front side of the substrate can be further suppressed during the flushing process.

In one embodiment of the present invention, the control device starts the rinsing process after reducing the temperature of the substrate to a specific low temperature through an SPM reduction process.

According to this configuration, the rinsing process is started after lowering to a specific low temperature. Therefore, the SPM existing on the front side of the substrate can be cooled during the SPM reduction process. Therefore, the temperature of the SPM existing on the front side of the substrate when the rinse process starts can be lowered. Thereby, the amount of SPM smoke generated around the front surface of the substrate can be further suppressed during the rinse process.

In this case, the substrate processing device further includes a temperature sensor for detecting the temperature of the substrate. Furthermore, the control device further executes a temperature detection process of using the temperature sensor to detect the temperature of the substrate in parallel with the SPM reduction process. Furthermore, when the detected temperature reaches the specific low temperature, the above-mentioned control device ends the above-mentioned SPM reduction process and starts the above-mentioned SPM reduction process.

According to this structure, when the temperature detected by the temperature sensor reaches the specific low temperature, the flushing process is started. Thereby, the rinse process can be started after the temperature of the SPM existing on the front side of the substrate is reliably lowered to a specific low temperature. Thereby, the amount of SPM smoke generated around the front surface of the substrate can be further suppressed during the rinse process.

In one embodiment of the present invention, the control device further executes a first substrate rotation process of rotating the substrate around the rotation axis in parallel with the SPM process. Furthermore, in the SPM reduction process, the control device executes a process of rotating the substrate at the same rotation speed as the first substrate rotation process, or at a rotation speed faster than the first substrate rotation process.

According to this configuration, in the SPM reduction process, the substrate is rotated at the same rotation speed as the first substrate rotation process or faster than the first substrate rotation process. Therefore, the centrifugal force acting on the SPM present on the front side of the substrate increases. This can promote the discharge of SPM from the front surface of the substrate and the like.

In one embodiment of the present invention, the substrate processing apparatus further includes: a processing cup having a baffle surrounding the substrate holding unit and capturing the processing liquid discharged from the substrate held by the substrate holding unit; a gas unit, which exhausts the inside of the above-mentioned processing cup; and a baffle lifting unit, which raises and lowers the above-mentioned baffle. Furthermore, the control device further controls the exhaust unit and the baffle lifting unit. The above-mentioned control device further executes: a second substrate rotation process, which is in parallel with the above-mentioned rinsing process, causing the above-mentioned substrate to rotate around the above-mentioned rotation axis; an in-baffle exhaust process, which is in parallel with the above-mentioned SPM reduction process and the above-mentioned rinsing process. , exhaust the inside of the above-mentioned baffle; the first height maintenance process, which is in parallel with the above-mentioned flushing process, maintains the above-mentioned baffle at the first height position; and the second height maintenance process, which is with the above-mentioned SPM reduction In parallel with the process, the baffle is maintained at a second height position higher than the first height position.

According to this configuration, the inside of the treatment cup is exhausted in parallel with the SPM reduction process and the flushing process. In addition, in parallel with the SPM reduction process, the baffle is maintained at the second height position. Then, in parallel with the rinsing process after the SPM reduction process, the baffle is maintained at the first height position.

When SPM is supplied to the front side of the substrate, a large amount of SPM smoke will be generated around the front side of the substrate. In addition, during the rinse process, SPM smoke will be generated around the front face of the substrate due to the reaction between the SPM present on the front face of the substrate and the rinse liquid. In the SPM reduction process, the baffle is arranged at the second height position, and the inside of the processing cup is exhausted. In the SPM reduction process, by keeping the supply of SPM stopped, the amount of SPM smoke existing around the substrate is reduced. That is, the supply of the rinse liquid to the front surface of the substrate can be started in a state where the amount of SPM smoke existing around the front surface of the substrate is reduced. Therefore, even if the SPM smoke is generated as the rinse liquid is supplied to the front surface of the substrate, the gas atmosphere containing the SPM smoke will not flow out of the processing cup. This can suppress the gas atmosphere containing SPM smoke from spreading to the surroundings.

In one embodiment of the present invention, the substrate processing apparatus further includes an SC1 supply unit for supplying SC1 to the substrate held by the substrate holding unit. Furthermore, the control device further executes a process of supplying SC1 to the front surface of the substrate after the rinse process.

According to this configuration, the resist residue adhering to the front surface of the substrate can be effectively removed. In addition, the sulfur component remaining on the front surface of the substrate can also be effectively removed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<First Embodiment> FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing device 1 is a single-chip device that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disc-shaped substrate.

The substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W using a processing liquid and a rinse liquid, and a loading port LP that mounts a substrate storage container for accommodating a plurality of substrates W to be processed by the processing units 2 . C; an indexing robot IR and a substrate transport robot CR that transport the substrate W between the loading port LP and the processing unit 2; and a control device 3 that controls the substrate processing device 1. The indexing robot IR transports the substrate W between the substrate container C and the substrate transfer robot CR. The substrate transfer robot CR transports the substrate W between the indexing robot IR and the processing unit 2 . The plurality of processing units 2 have, for example, the same configuration.

FIG. 2 is a diagrammatic cross-sectional view illustrating a configuration example of the processing unit 2 .

The processing unit 2 includes: a box-shaped chamber 4 with an internal space; a rotating chuck (substrate holding unit) 5 that holds a substrate W in a horizontal position in the chamber 4 and allows the substrate W to pass through the substrate The vertical rotation axis A1 of the center of W rotates; the SPM supply unit 6 is used to supply SPM (including H ₂ SO ₄ (sulfuric acid) and H ₂ O ₂ (through sulfuric acid/hydrogen peroxide mixture); SC1 supply unit 7, which is used to supply SC1 (including NH ₄ OH) to the front surface Wa of the substrate W held by the rotating chuck 5 and H ₂ O ₂ ); a blocking member 8 that faces the front surface Wa (upper surface) of the substrate W held by the rotating chuck 5; a central axis nozzle 9 that passes up and down through the blocking member 8 The inside is used to spray the processing fluid containing the rinsing liquid toward the center of the upper surface of the substrate W held by the rotating chuck 5; the rinsing liquid supply unit 10 is used to supply the rinsing liquid to the central axis nozzle 9; the lower surface nozzle 11 , which sprays the processing liquid toward the center of the lower surface of the substrate W held by the rotary chuck 5 (back surface Wb of the substrate W); and a cylindrical processing cup 12 surrounding the rotary chuck 5 .

The chamber 4 includes a box-shaped partition wall 14, an FFU (fan filter unit) 15 as a blowing unit that blows purified air from the upper part of the partition wall 14 into the partition wall 14 (equivalent to the inside of the chamber 4), and an exhaust unit 13 that discharges the gas in the chamber 4 from the lower part of the partition wall 14 .

The FFU 15 is arranged above the partition wall 14 and installed on the ceiling of the partition wall 14 . The FFU 15 blows purified air into the chamber 4 from the ceiling of the partition wall 14 . The exhaust unit 13 is connected to the bottom of the processing cup 12 through the exhaust pipe 16 connected to the inside of the processing cup 12, and suctions the inside of the processing cup 12 from the bottom of the processing cup 12. A down flow is formed in the chamber 4 by the FFU 15 and the exhaust unit 13 .

As the rotary chuck 5 , a clamping type chuck that clamps the substrate W in the horizontal direction and holds the substrate W horizontally is used. Specifically, the rotary chuck 5 includes a rotary motor (rotation unit) 17, a rotary shaft 18 integrated with the drive shaft of the rotary motor 17, and a disc-shaped rotary base installed substantially horizontally on the upper end of the rotary shaft 18. Seat 19.

The rotating base 19 includes a horizontal circular upper surface 19a, which has an outer diameter larger than the outer diameter of the substrate W. A plurality of (three or more, for example, six) clamping members 20 are arranged on the peripheral portion of the upper surface 19a. The plurality of clamping members 20 are arranged on the upper surface peripheral portion of the rotation base 19 at appropriate intervals, such as equal intervals, on the circumference corresponding to the outer peripheral shape of the substrate W.

The SPM supply unit 6 includes an SPM nozzle 21, a nozzle arm 22 to which the SPM nozzle 21 is attached, and a nozzle moving unit 23 that moves the SPM nozzle 21 by moving the nozzle arm 22 (see FIG. 3 ).

The SPM nozzle 21 is, for example, a linear nozzle that ejects SPM, which is an example of SPM, in a continuous flow state. For example, the SPM nozzle 21 is mounted on the nozzle arm 22 in a vertical position for ejecting SPM in a vertical direction, an oblique direction, or a horizontal direction toward the upper surface of the substrate W. The nozzle arm 22 extends in the horizontal direction.

The nozzle moving unit 23 moves the SPM nozzle 21 horizontally by horizontally moving the nozzle arm 22 around the swing axis. The nozzle moving unit 23 is configured to include a motor and the like. The nozzle moving unit 23 moves the SPM nozzle 21 horizontally between a processing position where the SPM liquid ejected from the SPM nozzle 21 is applied to the upper surface of the substrate W and a retreat position set around the rotary chuck 5 in a plan view. In this embodiment, the processing position is, for example, a central position where the SPM ejected from the SPM nozzle 21 is deposited on the center of the upper surface of the substrate W.

The SPM supply unit 6 further includes a sulfuric acid supply unit 24 that supplies H ₂ SO ₄ to the SPM nozzle 21 , and a hydrogen peroxide water supply unit 25 that supplies H ₂ O ₂ to the SPM nozzle 21 .

The sulfuric acid supply unit 24 includes a sulfuric acid pipe 26 with one end connected to the SPM nozzle 21 and a sulfuric acid valve 27 for opening and closing the sulfuric acid pipe 26 . H ₂ SO ₄ maintained at a specific high temperature is supplied from the sulfuric acid supply source to the sulfuric acid pipe 26. The sulfuric acid supply unit 24 may further include a sulfuric acid flow rate regulating valve that adjusts the opening of the sulfuric acid pipe 26 to adjust the flow rate of H ₂ SO ₄ flowing in the sulfuric acid pipe 26 . The sulfuric acid flow rate regulating valve includes a valve body with a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. The same is true for other flow adjustment valves.

The hydrogen peroxide water supply unit 25 includes a hydrogen peroxide water pipe 28 with one end connected to the SPM nozzle 21 and a hydrogen peroxide water valve 29 for opening and closing the hydrogen peroxide water pipe 28 . H ₂ O 2 at around normal temperature (room temperature (RT), approximately 23° C.) without temperature adjustment is supplied from the hydrogen peroxide water supply source to the hydrogen peroxide water pipe ₂₈ . The hydrogen peroxide water supply unit 25 may further include a hydrogen peroxide water quantity adjustment valve that adjusts the opening of the hydrogen peroxide water pipe 28 to adjust the flow rate of H ₂ O ₂ flowing through the hydrogen peroxide water pipe 28 .

When the sulfuric acid valve 27 and the hydrogen peroxide water valve 29 are opened, H ₂ SO ₄ from the sulfuric acid pipe 26 and H ₂ O ₂ from the hydrogen peroxide water pipe 28 will be supplied to the casing of the SPM nozzle 21. Mix the two thoroughly in the tube (stir). By this mixing, H ₂ SO ₄ and H ₂ O ₂ are uniformly mixed together, and a mixed liquid (SPM) of H ₂ SO ₄ and H ₂ O ₂ is generated by the reaction of H ₂ SO ₄ and H ₂ O ₂ . SPM contains peroxomonosulfuric acid (H ₂ SO ₅ ) with strong oxidizing ability, and is passively heated to a temperature higher than the temperature of H ₂ SO ₄ before mixing (above 100°C, for example, 160~220°C). The generated high-temperature SPM is ejected from the ejection port opened at the front end (for example, the lower end) of the sleeve of the SPM nozzle 21 .

The SC1 supply unit 7 includes the SC1 nozzle 30 , a nozzle arm 31 to which the SC1 nozzle 30 is attached at the front end, and a nozzle moving unit 32 that moves the SC1 nozzle 30 by moving the nozzle arm 31 (see FIG. 3 ). The nozzle moving unit 32 moves the SC1 nozzle 30 horizontally by horizontally moving the nozzle arm 31 around the swing axis. The nozzle moving unit 32 is configured to include a motor and the like. The nozzle moving unit 32 moves the SC1 nozzle 30 horizontally between a processing position where the SC1 liquid ejected from the SC1 nozzle 30 is deposited on the front surface Wa of the substrate W and a retreat position set around the rotary chuck 5 in a plan view. In other words, the processing position is a position where the droplet jet of SC1 ejected from the SC1 nozzle 30 is blown to the front surface Wa of the substrate W. In addition, the nozzle moving unit 32 moves the SC1 nozzle 30 horizontally so that the liquid deposited position of SC1 ejected from the SC1 nozzle 30 moves between the center portion of the front surface Wa of the substrate W and the peripheral portion of the front surface Wa of the substrate W.

The SC1 nozzle 30 sprays the droplet jet of SC1 toward the front surface Wa of the substrate W held by the rotary chuck 5 (the SC1 is sprayed out in the form of a spray). The SC1 nozzle 30 has the form of a known two-fluid nozzle (see, for example, US2016372320A1) that ejects minute droplets of SC1.

The SC1 supply unit 7 further includes an SC1 pipe 34 for supplying SC1 of normal-temperature liquid from the SC1 supply source to the SC1 nozzle 30 , an SC1 valve 35 for opening and closing the SC1 pipe 34 , and a valve for supplying gas from the gas supply source to the SC1 nozzle 30 . The gas pipe 36, and the gas valve 37 that opens and closes the gas pipe 36. An example of the gas supplied to the SC1 nozzle 30 is an inert gas such as nitrogen (N ₂ ). In addition, dry air or purified air may also be used.

While opening the gas valve 37, gas is ejected from the gas ejection port of the SC1 nozzle 30, and at the same time, the SC1 valve 35 is opened to eject SC1 from the liquid ejection port. Thereby, the gas collides (mixes) with SC1 in the vicinity below the SC1 nozzle 30 . Thereby, minute droplets of SC1 can be generated, and SC1 can be ejected in the form of a spray. The SC1 nozzle 30 may also be in the form of a linear nozzle that sprays SC1 in a continuous flow state, instead of being a two-fluid nozzle.

The blocking member 8 includes a blocking plate 41 and a rotation shaft 42 provided to be rotatable integrally with the blocking plate 41 . The blocking plate 41 has a disc shape having approximately the same diameter as the substrate W or a diameter larger than the diameter. On the lower surface of the blocking plate 41, there is a substrate facing surface 41a composed of a circular horizontal flat surface that faces the entire area of the front surface Wa of the substrate W.

The rotation axis 42 is disposed rotatably about a rotation axis A2 (an axis consistent with the rotation axis A1 of the substrate W) that passes through the center of the blocking plate 41 and extends vertically. The rotating shaft 42 is cylindrical. The rotation shaft 42 is relatively rotatably supported by a support arm 43 extending horizontally above the blocking plate 41 .

A cylindrical through hole 40 is formed in the center of the blocking plate 41 and penetrates the blocking plate 41 and the rotating shaft 42 up and down. The central axis nozzle 9 is inserted up and down in the through hole 40 . That is, the central axis nozzle 9 penetrates the blocking plate 41 and the rotation shaft 42 vertically.

The central axis nozzle 9 is provided with a cylindrical sleeve extending up and down inside the through hole 40 . The lower end of the central axis nozzle 9 opens to the substrate facing surface 41a to form a discharge port 9a.

The central axis nozzle 9 is supported by a support arm 43 in a non-rotatable manner relative to the support arm 43 . The central axis nozzle 9 moves up and down together with the blocking plate 41, the rotating shaft 42 and the support arm 43. A flushing liquid supply unit 10 is connected to the upstream end of the central axis nozzle 9 . The rinse liquid supply unit 10 includes a rinse liquid pipe 44 that guides the rinse liquid to the center axis nozzle 9 , and a rinse liquid valve 45 that opens and closes the rinse liquid pipe 44 . The rinse liquid is, for example, water. In this embodiment, the water is any one of pure water (deionized water), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and ammonia water with a diluted concentration (for example, about 10 to 100 ppm). When the flushing fluid valve 45 is opened, flushing fluid from the flushing fluid supply source is supplied from the flushing fluid pipe 44 to the central axis nozzle 9 . Thereby, the flushing liquid is sprayed downward from the discharge port 9a of the central axis nozzle 9.

An inert gas supply unit 46 is connected to the central axis nozzle 9 . The inert gas supply unit 46 includes an inert gas pipe 47 connected to the upstream end of the central axis nozzle 9 and an inert gas valve 48 interposed in the middle of the inert gas pipe 47 . The inert gas is nitrogen (N ₂ ), for example. When the inert gas valve 48 is opened, the inert gas will be ejected downward from the ejection port 9a of the central axis nozzle 9. When the inert gas valve 48 is closed, the discharge of the inert gas from the discharge port 9a stops.

A blocking plate rotation unit 49 including an electric motor or the like is coupled to the blocking plate 41 . The blocking plate rotation unit 49 rotates the blocking plate 41 and the rotation shaft 42 relative to the support arm 43 about the rotation axis A2.

The blocking member lifting unit 50 including an electric motor, a ball screw, etc. is coupled to the support arm 43 . The blocking member lifting unit 50 raises and lowers the blocking member 8 (blocking plate 41 and rotation shaft 42) and the central axis nozzle 9 together with the support arm 43 in the vertical direction.

The blocking member lifting unit 50 moves the blocking plate 41 to a blocking position (the position shown in FIG. 6F ) in which the substrate facing surface 41 a is close to the upper surface of the substrate W held by the rotating chuck 5 . It rises and falls between the retraction positions (shown as solid lines in Figure 2) for greater retraction upwards. The blocking member lifting unit 50 can maintain the blocking plate 41 in the blocking position, the intermediate position (the position shown in FIG. 6C and FIG. 6D), and the retracted position. When the blocking plate 41 is in the blocking position, the space between the substrate facing surface 41a and the upper surface of the substrate W is not completely isolated from the surrounding space, but gas does not flow into the space from the surrounding space. That is, the space is essentially blocked from its surrounding space.

The lower surface nozzle 11 has a single discharge port 11a facing the center portion of the lower surface (back surface Wb) of the substrate W held by the spin chuck 5 . The ejection port 11a ejects liquid vertically upward. The ejected liquid is incident substantially perpendicularly to the center portion of the lower surface of the substrate W held by the rotating chuck 5 . The lower surface supply pipe 51 is connected to the lower surface nozzle 11 . The lower surface supply pipe 51 is inserted into the inside of the vertically arranged rotating shaft 18 composed of a hollow shaft.

The flushing liquid pipe 52, the coolant pipe 53, and the SC1 pipe 54 are respectively connected to the lower surface supply pipe 51.

A flushing fluid valve 55 for opening and closing the flushing fluid piping 52 is interposed in the flushing fluid pipe 52 . The rinse liquid supplied to the rinse liquid pipe 52 is, for example, water at normal temperature (RT, about 23° C.). In this embodiment, the water is any one of pure water (deionized water), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and ammonia water with a diluted concentration (for example, about 10 to 100 ppm). The lower flushing fluid supply unit 71 is composed of the flushing fluid pipe 52 and the flushing fluid valve 55 .

The coolant pipe 53 is provided with a coolant valve 56 for opening and closing the coolant pipe 53 . The cooling liquid is, for example, water at normal temperature (RT, about 23°C). In this embodiment, the water is any one of pure water (deionized water), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and ammonia water with a diluted concentration (for example, about 10 to 100 ppm). In this embodiment, the coolant supply unit 72 is composed of the coolant pipe 53 and the coolant valve 56 .

The SC1 valve 57 for opening and closing the SC1 pipe 54 is interposed in the SC1 pipe 54 .

When the flushing fluid valve 55 is opened with the coolant valve 56 and the SC1 valve 57 closed, flushing fluid from the flushing fluid supply source is supplied to the lower surface nozzle 11 via the flushing fluid pipe 52 and the lower surface supply pipe 51 . The flushing liquid supplied to the lower surface nozzle 11 is ejected substantially vertically upward from the ejection port 11a. The rinse liquid sprayed from the lower surface nozzle 11 is substantially vertically incident on the center portion of the lower surface of the substrate W held by the spin chuck 5 .

When the coolant valve 56 is opened with the flushing fluid valve 55 and the SC1 valve 57 closed, coolant from the coolant supply source is supplied to the lower surface nozzle 11 via the coolant pipe 53 and the lower surface supply pipe 51 . The coolant supplied to the lower surface nozzle 11 is ejected substantially vertically upward from the ejection port 11a. The cooling liquid sprayed from the lower surface nozzle 11 is substantially perpendicular to the center portion of the lower surface of the substrate W held by the spin chuck 5 .

When the SC1 valve 57 is opened with the flushing fluid valve 55 and the coolant valve 56 closed, SC1 from the SC1 supply source is supplied to the lower surface nozzle 11 via the SC1 pipe 54 and the lower surface supply pipe 51 . SC1 supplied to the lower surface nozzle 11 is ejected substantially vertically upward from the ejection port 11a. SC1 ejected from the lower surface nozzle 11 is incident substantially perpendicularly to the center portion of the lower surface of the substrate W held by the spin chuck 5 .

The processing cup 12 is foldable. The baffle lifting unit 66 (see FIG. 3 ) raises and lowers at least one of the three baffles 63 to 65 to unfold and fold the processing cup 12 .

The processing cup 12 includes a plurality of cups surrounding the rotating base 19, a plurality of baffles that catch the processing liquid scattered around the substrate W, and a baffle lifting unit 66 that individually raises and lowers the plurality of baffles. (Refer to Figure 3). The plurality of cups include a first cup 61 and a second cup 62 . The plurality of baffles include a first baffle 63, a second baffle 64, and a third baffle 65. The processing cup 12 is arranged outside the outer periphery of the substrate W held by the rotary chuck 5 .

Each cup is cylindrical and surrounds the rotating chuck 5 . The second cup 62 located second from the inner side is arranged outside the first cup 61 . The first and second cup cups 61 and 62 respectively form annular grooves that open upward. A recovery/drainage pipe 67 is connected to the tank of the first cup holder 61 . The treatment liquid introduced into the tank of the first cup 61 is selectively transported to the recovery equipment or the waste liquid equipment through the recovery/drainage pipe 67, and is processed in the equipment. A recovery/drainage pipe 68 is connected to the tank of the second cup 62 . The treatment liquid introduced into the tank of the second cup 62 is selectively transported to the recovery equipment or the waste liquid equipment through the recovery/drainage pipe 68, and is processed in the equipment.

Each of the first to third baffles 63 to 65 is cylindrical and surrounds the rotating chuck 5 . The first to third baffles 63 to 65 respectively include a cylindrical guide portion 69 surrounding the periphery of the rotary chuck 5, and a direction extending from the upper end of the guide portion 69 toward the center side (the direction approaching the rotation axis A1 of the substrate W). A cylindrical inclined portion 70 extending obliquely upward. The upper end of each inclined portion 70 forms the inner peripheral portion of the baffle, and has a larger diameter than the base plate W and the rotating base 19 . The three inclined portions 70 overlap vertically, and the three guide portions 69 are coaxially arranged. The guide portion 69 of the first baffle 63 and the guide portion 69 of the second baffle 64 can enter and exit the first cup 61 and the second cup 62 respectively. That is, the processing cup 12 is foldable. The baffle lifting unit 66 raises and lowers at least one of the three baffles to unfold and fold the processing cup 12 . Furthermore, the cross-sectional shape of the inclined portion 70 may also be linear as shown in FIG. 2 , or, for example, may be a smoothly upwardly convex arc extending.

The baffle lifting unit 66 (refer to FIG. 3 ) positions the first to third baffles 63 to 65 at the upper position (second height position) UP and the upper end of the baffle respectively at the upper position (second height position) above the base plate W. It rises and falls between the retraction position RP located below the base plate W. The baffle lifting unit 66 can maintain each of the first to third baffles 63 to 65 at any position between the upper position UP and the retracted position RP. The supply of the processing liquid to the substrate W or the drying of the substrate W are performed with any baffle and the peripheral end surface of the substrate W facing each other.

In the first baffle-facing state of the processing cup 12 in which the innermost first baffle 63 faces the peripheral end surface of the substrate W (see FIGS. 6C to 6E ), the first to third baffles 63 to All 65 are arranged at the liquid capturing position (first height position) CP at which the upper end of the baffle is located above the substrate W. In the facing state (not shown) in which the second baffle 64 located second from the inner side faces the peripheral end surface of the substrate W, the second baffle 64 of the processing cup 12 faces the peripheral surface of the substrate W. The baffles 64 and 65 are arranged at the liquid capture position CP, and the first baffle 63 is arranged at the retracted position RP. In the third baffle-facing state (see FIG. 6F ) of the processing cup 12 in which the outermost third baffle 65 faces the peripheral end surface of the substrate W, the third baffle 65 is arranged at the liquid capture position CP. , and the first and second baffles 63 and 64 are arranged at the retracted position RP. In the retracted state (see FIG. 2 ) in which all the baffles are retracted from the peripheral end surface of the substrate W, the first to third baffles 63 to 65 are all arranged in the retracted position.

Furthermore, for the processing cup 12, as a state in which the first baffle 63 faces the peripheral end surface of the substrate W, in addition to the first baffle facing state, a first baffle capturing state is also prepared (see FIG. 6A, 6B). In the first baffle catching state of the processing cup 12, the first, second and third baffles 63, 64 and 65 are all arranged at a position UP set above the liquid catching position CP. When the first baffle 63 is in the upper position UP (that is, the first baffle catching state of the processing cup 12 ), the inner peripheral end (upper end) of the first baffle 63 is in contact with the substrate held by the rotating chuck 5 The distance between W is ensured to be large.

FIG. 3 is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus 1 .

The control device 3 is configured using a microcomputer, for example. The control device 3 has an arithmetic unit such as a CPU (Central Processing Unit), a fixed memory element, a memory unit such as a hard disk drive, and an input/output unit. The memory unit includes a computer-readable recording medium recording a computer program for execution by the computing unit. A step group is incorporated into the recording medium so that the control device 3 executes the first substrate processing example or the second substrate processing example described below.

The control device 3 operates the exhaust unit 13, the rotation motor 17, the nozzle moving unit 23, the nozzle moving unit 32, the blocking plate rotating unit 49, the blocking member lifting unit 50, the baffle lifting unit 66, etc. according to a predetermined program. Take control. In addition, the control device 3 controls the sulfuric acid valve 27, the hydrogen peroxide water valve 29, the SC1 valve 35, the gas valve 37, the flushing fluid valve 45, the inert gas valve 48, the flushing fluid valve 55, the coolant valve 56 and The switching action of SC1 valve 57 etc. is controlled.

FIG. 4 is an enlarged cross-sectional view showing the front surface Wa of the substrate W to be processed by the substrate processing apparatus 1 . The substrate W to be processed is, for example, a silicon wafer, and the pattern 100 is formed on the front surface Wa serving as the pattern formation surface. The pattern 100 is, for example, a fine pattern. The pattern 100 may also be composed of structures 101 having convex shapes (columnar shapes) arranged in a matrix as shown in FIG. 4 . In this case, the line width W1 of the structure 101 is set to about 10 nm to 45 nm, for example, and the gap W2 of the pattern 100 is set to about 10 nm to several μm, for example. The film thickness T of the pattern 100 is, for example, about 1 μm. Furthermore, the pattern 100 may have an aspect ratio (a ratio of the film thickness T to the line width W1) of, for example, about 5 to 500 (typically, about 5 to 50).

In addition, the pattern 100 may also be formed by repeatedly arranging linear patterns formed by fine grooves. In addition, the pattern 100 can also be formed by providing a plurality of fine pores (voids or pores) in the film.

The pattern 100 includes an insulating film, for example. In addition, the pattern 100 may include a conductive film. More specifically, the pattern 100 is formed of a laminated film in which a plurality of films are laminated, and may include an insulating film and a conductive film. The pattern 100 may also be a pattern including a single layer of film. The insulating film may be a silicon oxide film ( _SiO2 film) or a silicon nitride film (SiN film). In addition, the conductor film may be an amorphous silicon film into which impurities for lowering resistance are introduced, or may be a metal film (for example, a metal wiring film).

In addition, the pattern 100 may be a hydrophilic film. An example of the hydrophilic film is a TEOS (Tetraethylorthosilicate) film (a type of silicon oxide film).

FIG. 5 is a flowchart illustrating an example of the first substrate processing by the processing unit 2 . A first substrate processing example will be described with reference to FIGS. 1 to 5 . This first substrate processing example is a resist removal process in which the resist is removed from the upper surface (main surface) of the substrate W. A resist is deposited on the front surface Wa (see FIG. 4 ) of the substrate W to cover the entire area of the front surface Wa. The substrate W is not subjected to processing for ashing the resist.

When the processing unit 2 is used to perform the first substrate processing example on the substrate W, the substrate W that has been subjected to a high-dose ion implantation process (step S1 in FIG. 5 ) is moved into the interior of the chamber 4 . The control device 3 controls the substrate transfer robot CR holding the substrate W (see The hand H in Figure 1) enters the interior of the chamber 4. Thereby, the substrate W is transferred to the rotary chuck 5 with its front surface Wa (element formation surface) facing upward, and is held by the rotary chuck 5 .

In addition, this first substrate processing example is performed in a state where the inside of the processing cup 12 is sucked by the exhaust unit 13 (in-baffle exhaust process). A downward airflow is formed in the internal space of the chamber 4 by the exhaust gas from the exhaust unit 13 .

After the substrate W is held by the rotation chuck 5, the control device 3 controls the rotation motor 17 to start rotation of the substrate W (step S2 in FIG. 5). The substrate W is raised to a predetermined liquid processing speed (in the range of 100 to 500 rpm, for example, 300 rpm) and maintained at the liquid processing speed. Furthermore, the control device 3 controls the baffle lifting unit 66 to raise the first to third baffles 63 to 65 from the retracted position RP to the upper position UP, respectively. Thereby, as shown in FIG. 6A , the processing cup 12 enters the first baffle catching state (second height maintenance process).

When the rotation speed of the substrate W reaches the liquid processing speed, as shown in FIG. 6A , the control device 3 starts to execute the SPM process (step S3 in FIG. 5 ) (first substrate rotation process).

Specifically, the control device 3 controls the nozzle moving unit 23 to move the SPM nozzle 21 from the retreat position to the processing position. Furthermore, the control device 3 opens the sulfuric acid valve 27 and the hydrogen peroxide water valve 29 at the same time. Thereby, H ₂ SO ₄ is supplied to the SPM nozzle 21 through the sulfuric acid pipe 26 , and H ₂ O ₂ is supplied to the SPM nozzle 21 through the hydrogen peroxide water pipe 28 . H ₂ SO ₄ and H ₂ O ₂ are mixed inside the SPM nozzle 21 to generate high-temperature (for example, 160~220°C) SPM. The SPM is ejected from the ejection port of the SPM nozzle 21 and is deposited on the center of the front surface Wa of the substrate W.

The SPM ejected from the SPM nozzle 21 is deposited on the front surface Wa of the substrate W, and then flows outward along the front surface Wa of the substrate W due to centrifugal force. Therefore, SPM is supplied to the entire area of the front surface Wa of the substrate W, and a liquid film LF of SPM is formed on the substrate W covering the entire area of the front surface Wa of the substrate W. Thereby, a chemical reaction occurs between the resist and the SPM, and the resist on the substrate W is removed from the substrate W by SPM. The SPM that has moved to the peripheral edge of the substrate W is scattered toward the side of the substrate W from the peripheral edge of the substrate W, and is captured by the inner wall of the first baffle 63 . The captured SPM flows down along the inner wall of the first baffle 63 , is concentrated in the first cup 61 , and is then selectively transported to the recovery equipment or waste liquid equipment via the recovery/drainage pipe 67 .

In addition, in the SPM process (S3), the temperature of the SPM used is extremely high (for example, 160~220°C). Therefore, as the SPM is supplied to the substrate W, a large amount of SPM smoke will be generated around the front surface Wa of the substrate W. F, and the SPM smoke F floats around the front surface Wa of the substrate W.

In the SPM process (S3), when the processing cup 12 is in the state where the first baffle faces each other (when the processing cup 12 is in the state shown in FIG. 6C ), the first to third baffles 63 The height of ~65 is sufficient to catch the SPM flying from the substrate W. However, there is a risk that the gas atmosphere including the SPM smoke F existing around the front surface Wa of the substrate W passes through the upper opening 12a (divided by the upper end of the third baffle 65) of the processing cup 12 to the process. The liquid flows out of the cup 12 and spreads to the inside of the chamber 4 . The gas atmosphere containing the SPM smoke F will turn into particles and adhere to the substrate W, thereby contaminating the substrate W or contaminating the inner wall of the partition wall 14 between the chambers 4. Therefore, it is not expected that this gas atmosphere will spread to the surroundings. . Therefore, in parallel with the SPM process (S3), the processing cup 12 is maintained in the first baffle catching state.

In addition, in the SPM process (S3), the control device 3 can also control the nozzle moving unit 23 so that the SPM nozzle 21 is positioned at the peripheral position facing the peripheral portion of the front surface Wa of the substrate W and facing the substrate W. Move between the center position of the center of the upper surface. In this case, the position of the SPM on the upper surface of the substrate W is scanned over the entire area of the upper surface of the substrate W. Thereby, the entire area on the upper surface of the substrate W can be processed uniformly.

When a predetermined period (for example, about 30 seconds) elapses from the start of the SPM ejection, the SPM process (S3) ends, and following the end of the SPM process (S3), the SPM reduction process starts (step S4 in FIG. 5). In the SPM reduction process (S4), the processing cup 12 is also maintained in the first baffle catching state (the second height maintenance process).

Specifically, the control device 3 closes the sulfuric acid valve 27 and the hydrogen peroxide water valve 29. Thereby, as shown in FIG. 6B , the discharge of SPM from the SPM nozzle 21 is stopped. Thereafter, the control device 3 continues to maintain the rotation speed of the substrate W at the liquid processing speed. Since the supply of SPM to the front surface Wa of the substrate W is stopped, the rotation is continued while maintaining the liquid processing speed. Therefore, the SPM contained in the liquid film LF of SPM formed on the front surface Wa of the substrate W is affected by the substrate W. The centrifugal force generated by the rotation is discharged to the outside of the substrate W. Thereby, as shown in FIG. 6B , the thickness of the liquid film LF of SPM formed on the front surface Wa of the substrate W becomes thinner, and soon the SPM existing on the front surface Wa of the substrate W no longer forms a liquid film.

Furthermore, in the SPM reduction process (S4), the control device 3 controls the nozzle moving unit 23 to return the SPM nozzle 21 to the retracted position. Furthermore, the control device 3 controls the blocking member lifting unit 50 so that the blocking member 8 arranged in the retracted position is lowered to a flushing processing position set between the retracting position and the blocking position (the position shown in FIG. 6B ). , and remain at this flushing position.

In addition, in parallel with the SPM reduction process (S4), as shown in FIG. 6B , the control device 3 supplies the cooling liquid to the center portion of the back surface Wb of the substrate W. Specifically, the control device 3 opens the coolant valve 56 in synchronization with the discharge of SPM from the SPM nozzle 21 . Thereby, the coolant is sprayed upward from the discharge port 11a of the lower surface nozzle 11, and is supplied to the center part of the back surface Wb of the substrate W. The coolant sprayed from the nozzle 11 on the lower surface is water at room temperature (RT).

The cooling liquid supplied to the center part of the back surface Wb of the substrate W is spread to the entire area of the back surface Wb of the substrate W by the centrifugal force generated by the rotation of the substrate W. Thereby, the cooling liquid is supplied to the entire area of the back surface Wb of the substrate W. The coolant moving on the back surface Wb of the substrate W scatters toward the side of the substrate W from the peripheral edge of the substrate W, and is captured by the inner wall of the first baffle 63 . The captured coolant flows down along the inner wall of the first baffle 63 , is concentrated in the first cup 61 , and is then transported to the waste liquid equipment through the recovery/drainage pipe 67 .

The rotation speed and/or the period of the SPM reduction process (S4) are set to a rotation speed and/or such that the SPM present on the front surface Wa of the substrate W is discharged but the front surface Wa of the substrate W is not dried. period. The reason is that in the SPM reduction process (S4), if the front surface Wa of the substrate W is dried, particles will be generated.

Furthermore, in the SPM reduction process (S4), the first baffle 63 is maintained at the upper position UP (the processing cup 12 is maintained in the first baffle catching state), and the inside of the processing cup 12 is exhausted. In the SPM reduction process (S4), by continuously stopping the supply of SPM, the amount of SPM smoke F existing around the front surface Wa of the substrate W is reduced compared with the SPM process (S4).

Next, as shown in FIGS. 6C and 6D , a first rinsing process of rinsing the SPM attached to the front surface Wa of the substrate W using a rinsing liquid is performed (step S5 in FIG. 5 ). FIG. 6C shows the initial stage of the first rinse process (S5), and FIG. 6D shows the stages after the initial stage of the first rinse process (S5). In the first rinsing process (S5), the rotation speed of the substrate W is maintained at the liquid processing speed (the second substrate rotation process).

Specifically, when a predetermined period (for example, about 3.5 seconds) elapses from the stop of the SPM ejection, the control device 3 controls the baffle lifting unit 66 to move the first to third baffles 63 to 65 from above, respectively. The position UP drops to the liquid capture position CP. Thereby, as shown in FIG. 6C , the processing cup 12 enters the first baffle facing state (second height maintenance process). Furthermore, the control device 3 closes the coolant valve 56 and opens the flushing fluid valve 45 and the flushing fluid valve 55 .

By opening the rinse liquid valve 45, the rinse liquid is supplied from the ejection port 9a of the central axis nozzle 9 toward the center of the front surface Wa of the substrate W rotating at the liquid processing speed. The rinse liquid sprayed from the central axis nozzle 9 is deposited on the center of the front surface Wa of the substrate W on which the SPM is attached. The rinse liquid deposited on the central portion of the front surface Wa of the substrate W receives the centrifugal force generated by the rotation of the substrate W and flows toward the peripheral portion of the substrate W on the front surface Wa of the substrate W. Thereby, as shown in FIG. 6C , the SPM and resist (and resist residue) are rinsed in the entire area of the front surface Wa of the substrate W. The rinse liquid that moves to the peripheral edge of the substrate W scatters toward the side of the substrate W from the peripheral edge of the substrate W, and is captured by the inner wall of the first baffle 63 .

Furthermore, in the first rinsing process (S5), as shown in FIG. 6D , the SPM smoke F may be generated as the rinsing liquid is supplied to the front surface Wa of the substrate W. However, as mentioned above, when the SPM reduction process (S4) is completed, the amount of SPM smoke F existing around the front surface Wa of the substrate is reduced. In this state, the supply of the rinsing liquid to the front surface Wa of the substrate W is started. Therefore, in the first rinsing process (S5), the gas atmosphere containing the SPM smoke F will not pass through the upper opening 12a of the processing cup 12 to the processing cup 12. Cup 12 flows out. Thereby, the gas atmosphere containing the smoke F of SPM can be suppressed from spreading to the surroundings.

Furthermore, by closing the coolant valve 56 and opening the flushing fluid valve 55, the flushing fluid is sprayed upward from the discharge port 11a of the lower surface nozzle 11 and supplied to the center of the back surface Wb of the substrate W. The flushing liquid sprayed from the nozzle 11 on the lower surface is water at normal temperature. That is, in this substrate processing example, the cooling liquid sprayed from the lower surface nozzle 11 has the same liquid temperature as the rinse liquid sprayed from the lower surface nozzle 11 .

The rinse liquid supplied to the center part of the back surface Wb of the substrate W is spread to the entire area of the back surface Wb of the substrate W by the centrifugal force generated by the rotation of the substrate W. Thereby, as shown in FIG. 6D , the rinse liquid is supplied to the entire area of the back surface Wb of the substrate W. The rinse liquid moving on the back surface Wb of the substrate W scatters toward the side of the substrate W from the peripheral edge of the substrate W. The rinse liquid scattered from the peripheral edge of the substrate W is captured by the inner wall of the first baffle 63 .

The flushing liquid captured by the inner wall of the first baffle 63 flows down along the inner wall of the first baffle 63 , is concentrated in the first cup 61 , and is then transported to the waste liquid equipment through the recovery/drainage pipe 67 .

When a predetermined period (for example, about 23 seconds) elapses from the opening of the flushing fluid valve 45 and the flushing fluid valve 55 , the control device 3 closes the flushing fluid valve 45 and the flushing fluid valve 55 . Thereby, the ejection of the rinse liquid from the ejection port 9a of the central axis nozzle 9 is stopped, and the ejection of the rinse liquid from the ejection port 11a of the lower surface nozzle 11 is stopped. Furthermore, the control device 3 controls the blocking member lifting unit 50 to raise the blocking member 8 arranged in the flushing processing position to the retracted position and maintain it in the retracted position.

Next, as shown in FIG. 6E , the SC1 process of cleaning the front surface Wa of the substrate W using SC1 is performed (step S6 in FIG. 5 ). Specifically, in the SC1 process (S6), the control device 3 controls the nozzle moving unit 32 to move the SC1 nozzle 30 from the retreat position to the processing position. Thereafter, the control device 3 opens the SC1 valve 35 and the gas valve 37. Thereby, as shown in FIG. 6E , the droplet jet of SC1 is ejected from the SC1 nozzle 30 . In addition, the control device 3 controls the nozzle moving unit 32 in parallel with the discharge of the SC1 droplet jet from the SC1 nozzle 30 to reciprocate the SC1 nozzle 30 between the central position and the peripheral position (half scan). Thereby, the liquid application position of SC1 from the SC1 nozzle 30 can be reciprocated between the center part of the front surface Wa of the substrate W and the peripheral part of the front surface Wa of the substrate W. Thereby, the liquid deposited position of SC1 can be scanned over the entire area of the front surface Wa of the substrate W. By supplying SC1 to the front surface Wa of the substrate W, the resist residue can be removed from the front surface Wa of the substrate W. Furthermore, by supplying SC1 to the front surface Wa of the substrate W, the sulfur component can be removed from the front surface Wa of the substrate W. The SC1 supplied to the front surface Wa of the substrate W scatters toward the side of the substrate W from the peripheral edge of the substrate W, and is captured by the inner wall of the first baffle 63 .

In addition, in the SC1 process (S6), in parallel with the supply of SC1 to the front surface Wa of the substrate W, as shown in FIG. 6D, SC1 is supplied to the back surface Wb of the substrate W. Specifically, the control device 3 opens the SC1 valve 57 . Thereby, SC1 is ejected upward from the ejection port 11a of the lower surface nozzle 11, and is supplied to the center part of the back surface Wb of the substrate W. The SC1 supplied to the center portion of the back surface Wb of the substrate W is extended to the entire area of the back surface Wb of the substrate W by the centrifugal force generated by the rotation of the substrate W. Thereby, SC1 is supplied to the entire area of the back surface Wb of the substrate W. SC1 moving on the back surface Wb of the substrate W is scattered toward the side of the substrate W from the peripheral edge of the substrate W. SC1 scattered from the peripheral edge of the substrate W is captured by the inner wall of the first baffle 63 .

The SC1 captured by the inner wall of the first baffle 63 flows down along the inner wall of the first baffle 63 , is concentrated in the first cup 61 , and is then transported to the waste liquid equipment through the recovery/drainage pipe 67 .

Then, when a predetermined period elapses from the opening of the SC1 valve 35 and the SC1 valve 57, the control device 3 closes the SC1 valve 35 and the gas valve 37, and also closes the SC1 valve 57. Thereby, the discharge of the droplet jet of SC1 from the SC1 nozzle 30 is stopped, and the discharge of SC1 from the discharge port 11a of the lower surface nozzle 11 is stopped. With this, the SC1 process (S6) ends. Thereafter, the control device 3 controls the nozzle moving unit 32 to return the SC1 nozzle 30 to the retreat position.

Next, a second rinsing process of rinsing SC1 attached to the front surface Wa of the substrate W using a rinsing liquid is performed (step S7 in FIG. 5 ).

Specifically, the control device 3 controls the blocking member lifting unit 50 so that the blocking member 8 arranged in the retreat position is lowered to the flushing processing position and maintained at the flushing processing position.

In addition, the control device 3 opens the flushing fluid valve 45 . Thereby, the rinse liquid is ejected from the ejection port 9a of the central axis nozzle 9 toward the center of the front surface Wa of the substrate W rotating at the processing speed. The rinse liquid sprayed from the central axis nozzle 9 is deposited on the central portion of the front surface Wa of the substrate W covered with SPM. It receives the centrifugal force generated by the rotation of the substrate W and flows on the front surface Wa of the substrate W toward the peripheral edge of the substrate W. Thereby, SC1 (and the resist residue) is rinsed in the entire area of the front surface Wa of the substrate W. The rinse liquid that moves to the peripheral edge of the substrate W scatters toward the side of the substrate W from the peripheral edge of the substrate W, and is captured by the inner wall of the first baffle 63 .

Furthermore, by opening the rinse liquid valve 55, the rinse liquid is sprayed upward from the discharge port 11a of the lower surface nozzle 11, and is supplied to the center of the back surface Wb of the substrate W. The rinse liquid supplied to the center part of the back surface Wb of the substrate W is spread to the entire area of the back surface Wb of the substrate W by the centrifugal force generated by the rotation of the substrate W. Thereby, the rinse liquid is supplied to the entire area of the back surface Wb of the substrate W. The rinse liquid moving on the back surface Wb of the substrate W scatters toward the side of the substrate W from the peripheral edge of the substrate W. The rinse liquid scattered from the peripheral edge of the substrate W is captured by the inner wall of the first baffle 63 .

The flushing liquid captured by the inner wall of the first baffle 63 flows down along the inner wall of the first baffle 63 , is concentrated in the first cup 61 , and is then transported to the waste liquid equipment through the recovery/drainage pipe 67 .

When a predetermined period (for example, about 23 seconds) elapses from the opening of the flushing fluid valve 45 and the flushing fluid valve 55 , the control device 3 closes the flushing fluid valve 45 and the flushing fluid valve 55 . Thereby, the ejection of the rinse liquid from the ejection port 9a of the central axis nozzle 9 is stopped, and the ejection of the rinse liquid from the ejection port 11a of the lower surface nozzle 11 is stopped.

Furthermore, the control device 3 controls the baffle lifting unit 66 to lower the first and second baffles 63 and 64 from the liquid capturing position CP to the retreat position. Thereby, the processing cup 12 enters the third baffle facing state.

Furthermore, the control device 3 controls the blocking member lifting unit 50 to lower the blocking member 8 toward the blocking position and maintain it at the blocking position.

Next, as shown in FIG. 6F , a drying process is performed to dry the substrate W (step S8 in FIG. 5 ). Specifically, in this state, the control device 3 controls the rotation motor 17 to accelerate the rotation of the substrate W to a drying speed that is greater than the rotation speed of the SPM process (S3) to the second rinse process (S7) (S7). For example, several thousand rpm) and maintained at the drying speed. Thereby, a large centrifugal force is exerted on the liquid on the substrate W, and the liquid adhering to the substrate W is thrown toward the surroundings of the substrate W.

Furthermore, the control device 3 controls the blocking plate rotation unit 49 to rotate the blocking plate 41 around the rotation axis A2. Thereby, the substrate W rotates in synchronization with the rotation of the blocking plate 41 . Furthermore, the control device 3 opens the inert gas valve 48 to eject the inert gas from the ejection port 9a.

When a specific time elapses from the start of the high-speed rotation of the substrate W, the control device 3 controls the rotation motor 17 to stop the rotation of the substrate W by the rotation chuck 5 (step S9 in FIG. 5 ). The control device 3 controls the blocking member lifting unit 50 to raise the blocking member 8 and retract it to the retracted position.

Next, the substrate W is carried out from the chamber 4 (step S10 in FIG. 5 ). Specifically, the control device 3 causes the hand of the substrate transfer robot CR to enter the inside of the chamber 4 . Then, the control device 3 causes the hand of the substrate transfer robot CR to hold the substrate W on the rotary chuck 5 . Thereafter, the control device 3 retracts the hand of the substrate transfer robot CR from the chamber 4 . Thereby, the substrate W from which the resist has been removed from the front surface Wa is carried out from the chamber 4 .

In summary, according to this embodiment, following the end of the SPM process (S3) and earlier than the start of the first rinse process (S5), SPM is not supplied to the front surface Wa of the substrate W but the substrate W is rotated, thereby causing the SPM to rotate. It is discharged from the front surface Wa of the substrate W (SPM reduction process (S4)). Thereby, before starting the first rinsing process (S5), the amount of high-temperature SPM existing on the front surface Wa of the substrate W can be reduced to a level that does not dry the front surface Wa of the substrate W. Since the first rinse process (S5) is started after reducing the amount of high-temperature SPM present on the front surface Wa of the substrate W, the SPM generated around the front surface Wa of the substrate W can be suppressed in the first rinse process (S5). The amount of smoke F. Thereby, the gas atmosphere containing the smoke F of SPM can be suppressed from spreading to the surroundings. Therefore, it is possible to prevent the gas atmosphere containing the SPM smoke F from turning into particles, adhering to the substrate W and contaminating the substrate W, or contaminating the inner surface (inner wall) of the partition wall 14 between the chambers 4 .

Furthermore, in the SPM reduction process (S4), the amount of high-temperature SPM existing on the front surface Wa of the substrate W is reduced, so that the temperature of the substrate W is reduced. In addition, due to the rotation (idling) of the substrate W, the contact area per unit time between the substrate W and the surrounding gas atmosphere increases. Due to these factors, the substrate W is cooled. Therefore, the first rinse process (S5) can be started in a state where the temperature is lower than that at the end of the SPM process (S3). Thereby, it is possible to suppress thermal shock caused by the supply of the rinse liquid, thereby suppressing or preventing damage to the pattern 100 formed on the front surface Wa of the substrate W.

In addition, in parallel with the SPM reduction process (S4), cooling liquid is supplied to the back surface Wb of the substrate W (back surface cooling liquid supply process). Therefore, the SPM existing on the front surface Wa of the substrate W can be cooled in the SPM reduction process (S4). Therefore, the temperature of the SPM existing on the front surface Wa of the substrate W can be lowered when the first rinse process (S5) starts. As the SPM becomes high temperature, the amount of SPM smoke F generated increases. Thereby, the amount of SPM smoke F generated around the front surface Wa of the substrate W can be further suppressed in the first rinse process (S5).

Especially in this embodiment, since the temperature of the coolant supplied to the back surface Wb of the substrate W is the same as that of the rinse liquid, the liquid temperature of the SPM present on the front surface Wa of the substrate W can be further reduced. Since the first rinsing process (S5) is started after the liquid temperature of the SPM present on the front surface Wa of the substrate W is sufficiently lowered, the first rinsing process (S5) can be further suppressed in the first rinsing process (S5) around the front surface Wa of the substrate W. The amount of SPM smoke F generated.

In addition, since the cooling liquid is supplied to the back surface Wb of the substrate W in the back surface cooling liquid supply process, the temperature of the substrate W can be lowered before starting the first rinse process (S5). Therefore, the first rinse process (S5) can be started after the temperature of the substrate W is sufficiently lowered. Thereby, the thermal shock caused by the supply of the rinse liquid can be further suppressed, thereby more effectively suppressing or preventing damage to the front surface Wa of the substrate W.

In addition, in parallel with the SPM reduction process (S4), the first shutter 63 is maintained at the upper position UP (the processing cup 12 is maintained in the first shutter catching state). In addition, in parallel with the SPM reduction process (S4) and the first flushing process (S5), the inside of the first baffle 63 is exhausted.

In the SPM reduction process (S4), the first baffle 63 is maintained in the upper position UP (the processing cup 12 is maintained in the first baffle catching state), and the inside of the processing cup 12 is exhausted. In the SPM reduction process (S4), by continuously stopping the supply of SPM, the amount of SPM smoke F existing around the front surface Wa of the substrate W is reduced. That is, the supply of the rinse liquid to the front surface Wa of the substrate W can be started in a state where the amount of SPM smoke F existing around the front surface Wa of the substrate is reduced. Therefore, in the first rinse process (S5), even if the SPM smoke F is generated as the rinse liquid is supplied to the front surface Wa of the substrate W, the gas atmosphere containing the SPM smoke F will not pass through the upper opening 12a to the processing carrier. Cup 12 flows out. Thereby, the gas atmosphere containing the smoke F of SPM can be suppressed from spreading to the surroundings.

FIG. 7 is a schematic diagram illustrating the SPM reduction process (S4) of the second substrate processing example.

The difference between the second substrate processing example and the first substrate processing example is that in the backside coolant supply process executed in parallel with the SPM reduction process (S4), the liquid temperature will be higher than normal temperature (about 40°C to about 60°C). ) warm water (HOT DIW) and non-temperature water are supplied to the back surface Wb of the substrate W as the cooling liquid.

In this case, in the first rinse process (S5) executed following the SPM reduction process (S4), the rinse liquid supplied to the back surface Wb of the substrate W is, for example, normal temperature. That is, in this substrate processing example, the cooling liquid sprayed from the lower surface nozzle 11 has a higher liquid temperature than the rinse liquid sprayed from the lower surface nozzle 11 .

In other respects, the second substrate processing example is the same as the first substrate processing example.

According to the second substrate processing example, before the rinse liquid is supplied to the substrate W, the cooling liquid having a higher liquid temperature than the rinse liquid is supplied to the substrate W. Therefore, by sequentially performing cooling using the cooling liquid and cooling using the rinse liquid, the temperature of the substrate W can be lowered in steps. Thereby, thermal shock can be further suppressed.

FIG. 8 is a schematic diagram illustrating the SPM reduction process (S4) of the third substrate processing example. Figure 9 is a flow chart when transitioning from the SPM reduction process (S4) to the first rinse process (S5).

As shown in FIG. 8 , the processing unit 2 may further include a temperature sensor 102 for detecting the temperature of the front surface Wa of the substrate W. The temperature sensor 102 is, for example, a radiation thermometer. The detection output obtained by the temperature sensor 102 is input to the control device 3 (see FIG. 3 etc.).

In the SPM reduction process (S4), the control device 3 always monitors the detection output of the temperature sensor 102 (temperature detection process, step T1 in FIG. 9).

Furthermore, when the detected temperature drops to the threshold (specific low temperature) (YES in step T2 of FIG. 9 ), the control device 3 opens the flushing fluid valve 45 and the flushing fluid valve 55 and starts flushing fluid from the central axis nozzle. 9 and the ejection from the lower surface nozzle 11 (step T3 in Figure 9). Thereby, the SPM reduction process (S4) ends, and the process moves to the first rinse process (S5) (step T4 in FIG. 9). On the other hand, when the detected temperature reaches the threshold value (NO in step T2 of FIG. 9 ), the process returns to the process of FIG. 9 and is repeatedly executed (loop).

That is, before the detection temperature drops to the threshold value, the SPM reduction process (S4) is continued without moving to the first rinse process (S5). Moreover, when the detected temperature reaches the threshold value, the SPM reduction process (S4) ends, and the first rinse process (S5) starts.

According to this substrate processing example, when the detected temperature obtained by the temperature sensor 102 reaches the threshold value, the first rinse process (S5) is started. Thereby, the first rinsing process (S5) can be started after the temperature of the SPM existing on the front surface Wa of the substrate W is reliably reduced to a low temperature. Thereby, the amount of SPM smoke F generated around the front surface Wa of the substrate W can be further suppressed in the first rinse process (S5). Thereby, particle contamination of the substrate W caused by the SPM smoke F can be suppressed or prevented.

<Second Embodiment> FIG. 10 is a schematic cross-sectional view illustrating a configuration example of the lower surface nozzle 211 of the processing unit 202 according to the second embodiment of the present invention. FIG. 11 is a schematic plan view for explaining a structural example of the lower surface nozzle 211.

The processing unit 202 is provided with a lower surface nozzle 211 in the form of a bar nozzle instead of the lower surface nozzle 11 having a single discharge port 11a. As shown in FIGS. 10 and 11 , the lower surface nozzle 211 includes a bar-shaped (Bar-shaped) nozzle portion 204 extending horizontally from the center portion of the substrate W to the peripheral portion of the substrate W along the rotation radius direction DL of the substrate W. A plurality of ejection ports 205 for ejecting coolant are provided on the upper surface of the nozzle portion 204 . The plurality of ejection ports 205 are arranged along the rotation radius direction DL of the substrate W. The plurality of ejection ports 205 include a central ejection port 205a facing the central part of the back surface Wb of the substrate W, and a peripheral ejection port 205b facing the peripheral part of the back surface Wb of the substrate W.

An internal flow path 206 is formed inside the nozzle portion 204 to guide the coolant supplied to the plurality of discharge ports 205 . The plurality of ejection ports 205 are connected to the internal flow path 206 . The nozzle portion 204 communicates with the coolant pipe 53 . The internal flow path 206 is connected to the downstream end (upper end) of the lower surface supply pipe 51 . Thereby, the substrate W can be cooled uniformly in the rotation radius direction DL. In the examples of FIG. 10 and FIG. 11 , the opening areas of each ejection port 205 are equal to each other. However, the opening areas of the ejection ports 205 may be different from each other.

The ejection port 205 ejects the coolant in the ejection direction toward the back surface Wb of the substrate W. The ejection direction may be vertically upward, or may be inclined upstream or downstream of the rotational direction Dr of the substrate W with respect to the vertical upward direction.

In this case, the control device 3 performs a central ejection process of ejecting the coolant from the central ejection port 205a toward the center of the back surface Wb of the substrate W in the back surface coolant supply process executed in parallel with the SPM reduction process (S4). and a peripheral part ejection process in which the cooling liquid is ejected from the peripheral part ejection port 205b toward the peripheral part of the back surface Wb of the substrate W.

In the processing unit 202 of the second embodiment, not only the first substrate processing example, but also the second substrate processing example or the third substrate processing example can be executed.

Two embodiments of the present invention have been described above, but the present invention can be implemented in another embodiment.

For example, in the first to third substrate processing examples, the rotation speed of the substrate W in the SPM reduction process (S4) is equal to the rotation speed of the substrate W in the SPM process (S3). However, the rotation speed of the substrate W in the SPM reduction process (S4) may also be faster (eg, 500 rpm) than the rotation speed of the substrate W (eg, about 300 rpm) in the SPM process (S3).

In this case, the centrifugal force acting on the front surface Wa of the substrate W increases in the SPM reduction process (S4), so that the discharge of SPM from the front surface Wa of the substrate W can be promoted. Thereby, the amount of high-temperature SPM existing on the front surface Wa of the substrate W at the beginning of the first rinse process (S5) can be further reduced. Therefore, the amount of SPM smoke F generated around the front surface Wa of the substrate W can be further suppressed in the first rinse process (S5).

Furthermore, in the first and second substrate processing examples, the rotation speed of the SPM reduction process (S4) and/or the period of the SPM reduction process (S4) can also be set to the front surface Wa of the substrate W at the end of the SPM reduction process (S4). The speed and/or period during which the temperature decreases to the threshold (specific low temperature). In this case, after the temperature of the front surface Wa of the substrate W decreases to a threshold value (specific low temperature), the first rinse process (S5) is started. In this case, since the first rinse process (S5) is started after the liquid temperature of the SPM present on the front surface Wa of the substrate W is sufficiently lowered, the front surface of the substrate W can be further suppressed in the first rinse process (S5). The amount of SPM smoke generated around Wa.

In addition, when the same liquid type and the same temperature liquid are used as the rinse liquid and the coolant like the first substrate processing example and the third substrate processing example, the lower rinse liquid supply unit 71 can also be used as the coolant. supply unit. In this case, when the SPM reduction process (S4) starts, the flushing fluid valve 55 is opened, and the flushing fluid sprayed from the lower surface nozzle 11 is used as the cooling fluid. Furthermore, when the SPM reduction process (S4) ends, the rinse liquid valve 55 is not closed, but the rinse liquid continues to be sprayed from the lower surface nozzle 11. In this state, the process moves to the first rinse process (S5). In this case, the coolant supply unit 72 may be eliminated.

In addition, in the first to third substrate processing examples, the rinse liquid is set to normal temperature. However, warm water (HOT DIW) with a liquid temperature higher than normal temperature (about 40°C to about 60°C) may also be used. Use very warm water as the rinse liquid.

The first to third substrate processing examples can also be combined with each other.

Furthermore, in the first to third substrate processing examples, the backside coolant supply process may be performed in parallel with the SPM reduction process (S4).

Furthermore, in the above first to third substrate processing examples, the first antistatic liquid supply process of supplying the antistatic liquid to the front surface Wa of the substrate W may be performed before the SPM process (S3). The antistatic liquid is, for example, carbonated water. In this case, the occurrence of electrostatic discharge caused by the entrapped charging of the substrate W can be effectively suppressed.

Furthermore, in the first to third substrate processing examples, the first cleaning process of using the first cleaning solution to clean the front surface Wa of the substrate W may also be performed before the SPM process (S3). An example of such a first cleaning chemical solution is hydrofluoric acid (HF).

Furthermore, in the first to third substrate processing examples, the organic solvent (drying liquid) with low surface tension may also be supplied before the drying process (S8) to replace the rinse liquid existing on the front surface Wa of the substrate W with the organic solvent. Organic solvent replacement process. The organic solvent replacement process is performed when the processing cup 12 is in the facing state of the third baffle.

Furthermore, in the first to third substrate processing examples, the rinse liquid is ejected from the central axis nozzle 9 integrated with the blocking member 8 as an example. However, it may also be provided separately from the blocking member 8 . The rinse liquid nozzle sprays the rinse liquid toward the center of the front surface Wa of the substrate W.

In addition, as the first to third substrate processing examples, a resist removal process has been cited as an example, but the process is not limited to resist, and may also be a process of removing other organic substances using SPM.

In addition, in the first and second embodiments, the SPM supply unit 6 has been described as an example of a nozzle mixing type in which H ₂ SO ₄ and H ₂ O ₂ are mixed inside the SPM nozzle 21 . However, A piping mixing type may also be used, that is, a mixing part connected via a pipe is provided on the upstream side of the SPM nozzle 21, and H ₂ SO ₄ and H ₂ O ₂ are mixed in the mixing part.

Furthermore, in each of the above embodiments, the case where the substrate processing apparatus 1 processes the front surface Wa of the substrate W composed of a semiconductor wafer has been described. However, the substrate processing apparatus may also process a substrate for a liquid crystal display device. , Substrates for FPD (Flat Panel Display) such as organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for optical magnetic disks, substrates for photomasks, ceramic substrates, solar cells A device for processing substrates such as substrates.

In addition, various design changes can be made within the scope of the matters described in the patent application.

This application corresponds to Japanese Patent Application No. 2018-103873 filed with the Japan Patent Office on May 30, 2018, and the entire disclosure of this application is incorporated herein by reference.

1:Substrate processing device 2: Processing unit 3:Control device 4: Chamber 5: Rotating chuck 6:SPM supply unit 7:SC1 supply unit 8: Blocking components 9:Central axis nozzle 9a: spout 10: Flushing fluid supply unit 11: Lower surface nozzle 11a: spout 12: Handle the cup 12a: Upper opening 13:Exhaust unit 14: partition wall 15:FFU 16:Exhaust pipe 17: Rotary motor 18:Rotation axis 19: Rotating base 19a: Upper surface 20: Clamping component 21:SPM nozzle 22:Nozzle arm 23:Nozzle moving unit 24: Sulfuric acid supply unit 25: Hydrogen peroxide water supply unit 26: Sulfuric acid piping 27: Sulfuric acid valve 28: Hydrogen peroxide water piping 29: Hydrogen peroxide water valve 30:SC1 nozzle 31:Nozzle arm 32:Nozzle moving unit 34:SC1 piping 35:SC1 valve 36:Gas piping 37:Gas valve 40:Through hole 41:Blocking board 41a:Substrate opposite surface 42:Rotation axis 43:Support arm 44: Flushing fluid piping 45: Flush valve 46: Inert gas supply unit 47:Inert gas piping 48:Inert gas valve 49: Blocking plate rotation unit 50: Blocking member lifting unit 51: Lower surface supply piping 52: Flushing fluid piping 53: Coolant piping 54:SC1 piping 55: Flushing fluid valve 56: Coolant valve 57:SC1 valve 61: The first cup 62: The second cup 63: 1st baffle 64: 2nd baffle 65: 3rd baffle 66:Baffle lifting unit 67: Drainage piping 68: Drainage piping 69: Guidance Department 70: Inclined part 71: Lower flushing fluid supply unit 72: Coolant supply unit 100: Pattern 101:Construction 102:Temperature sensor 202: Processing unit 204:Nozzle part 205:Spout 205a: Central spout 205b: Peripheral ejection port 206: Internal flow path 211: Lower surface nozzle A1:Rotation axis A2:Rotation axis C:Substrate storage container CP: liquid capture position CR: Substrate transfer robot DL: rotation radius direction Dr: rotation direction F: smoke H:Hand IR: Indexing manipulator LF: liquid film LP: loading port RP: retreat position S1~S10: steps T: film thickness T1: Step T2: Step T3: Steps T4: Step UP: upper position W: substrate W1: line width W2: Gap Wa:front Wb: back

FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view illustrating a structural example of a processing unit provided in the above substrate processing apparatus. FIG. 3 is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus. FIG. 4 is an enlarged cross-sectional view showing the front of the substrate W to be processed by the substrate processing apparatus. FIG. 5 is a flowchart illustrating an example of processing the first substrate using the processing unit. 6A and 6B are diagrammatic diagrams for explaining the SPM process and the SPM reduction process. 6C and 6D are diagrammatic diagrams for explaining the SPM reduction process and the first rinse process. Figures 6E and 6F are diagrammatic diagrams for explaining the SC1 process and the drying process. FIG. 7 is a schematic diagram illustrating the SPM reduction process of the second substrate processing example using the above processing unit. FIG. 8 is a schematic diagram illustrating the SPM reduction process of the third substrate processing example using the above-mentioned processing unit. FIG. 9 is a flow chart of the transition from the SPM reduction process to the first rinse process in the third substrate processing example. 10 is a schematic cross-sectional view illustrating a configuration example of the lower surface nozzle of the processing unit according to the second embodiment of the present invention. FIG. 11 is a schematic plan view for explaining a structural example of the lower surface nozzle.

S1~S10: steps

Claims (22)

A substrate processing method comprising: An SPM process that supplies heated SPM to the front side of the substrate held in a horizontal position by a substrate holding unit with the front side of the substrate facing upward; The SPM reduces low temperature process by following the end of the above-mentioned SPM process, without supplying SPM to the front surface of the above-mentioned substrate, and rotating the above-mentioned substrate around the rotation axis passing through the center of the above-mentioned substrate, thereby causing the SPM to be removed from the above-mentioned substrate. The front side of the substrate is discharged, thereby reducing the amount of SPM present on the front side of the substrate to a level that will not dry the front side of the substrate and lowering the temperature of the substrate; and The rinsing process is to supply a rinsing liquid containing water to the front side of the substrate after the SPM reducing and low-temperature process. The substrate processing method of claim 1 further includes a backside coolant supply process, the backside coolant supply process is parallel to the SPM reduction and low temperature process, and the supply to the backside of the substrate that is opposite to the front side has a higher supply capacity. Coolant with low SPM and liquid temperature to the front of the above-mentioned substrate. The substrate processing method of Claim 1 or 2, wherein the above-mentioned rinsing process is started after the temperature of the front surface of the above-mentioned substrate is reduced to a specific low temperature through the above-mentioned SPM low temperature reduction process. The substrate processing method of claim 3 further includes a temperature detection process that is parallel to the above-mentioned SPM low temperature reduction process and uses a temperature sensor to detect the temperature of the above-mentioned substrate, and When the detected temperature reaches the specific low temperature, the SPM reducing low temperature process ends and the rinsing process starts. The substrate processing method of claim 1 or 2 further includes a first substrate rotation process that is parallel to the above-mentioned SPM process and rotates the above-mentioned substrate around the above-mentioned rotation axis, The SPM reduction and low-temperature process includes a process of rotating the substrate at a rotation speed that is the same as the first substrate rotation process, or faster than the first substrate rotation process. For example, the substrate processing method of claim 1 or 2 further includes: a second substrate rotation process, which is parallel to the above-mentioned rinsing process and causes the above-mentioned substrate to rotate around the above-mentioned rotation axis; The exhaust process in the baffle is parallel to the above-mentioned SPM low temperature reduction process and the above-mentioned flushing process, and has a cylindrical baffle surrounding the periphery of the above-mentioned substrate holding unit and accommodating the inside of the processing cup of the substrate holding unit. Exhaust; The first height maintenance process is in parallel with the above-mentioned flushing process and maintains the above-mentioned baffle at the first height position; and The second height maintenance process is in parallel with the above-mentioned SPM low temperature reduction process, and maintains the above-mentioned baffle at a second height position higher than the above-mentioned first height position. A substrate processing method comprising: An SPM process that supplies SPM to the front side of the substrate held in a horizontal position by a substrate holding unit with the front side of the substrate facing upward; The SPM reduction process is continued after the end of the above-mentioned SPM process. SPM is not supplied to the front side of the above-mentioned substrate, but the above-mentioned substrate is rotated around the rotation axis passing through the central part of the above-mentioned substrate, thereby causing the SPM to be discharged from the front side of the above-mentioned substrate. Thereby reducing the amount of SPM present on the front side of the substrate to a level that will not dry the front side of the substrate; A backside coolant supply process, which is parallel to the above-mentioned SPM reduction process, and supplies coolant with a lower liquid temperature than the SPM supplied to the frontside of the above-mentioned substrate to the backside of the above-mentioned substrate that is opposite to the front-side; and A rinsing process, which is to supply a rinsing liquid containing water to the front side of the above-mentioned substrate after the above-mentioned SPM reduction process; The back surface coolant supply process includes a central spray process that sprays the coolant toward the center of the back surface of the substrate, and a peripheral spray process that sprays the coolant toward the peripheral edge of the back surface of the substrate in parallel with the central spray process. process. The substrate processing method of claim 2 or 7, wherein the cooling liquid has a higher liquid temperature than the rinse liquid. A substrate processing method comprising: An SPM process that supplies SPM to the front side of the substrate held in a horizontal position by a substrate holding unit with the front side of the substrate facing upward; The SPM reduction process is continued after the end of the above-mentioned SPM process. SPM is not supplied to the front side of the above-mentioned substrate, but the above-mentioned substrate is rotated around the rotation axis passing through the central part of the above-mentioned substrate, thereby causing the SPM to be discharged from the front side of the above-mentioned substrate. Thereby reducing the amount of SPM present on the front side of the substrate to a level that will not dry the front side of the substrate; A backside coolant supply process, which is parallel to the above-mentioned SPM reduction process, and supplies coolant with a lower liquid temperature than the SPM supplied to the frontside of the above-mentioned substrate to the backside of the above-mentioned substrate that is opposite to the front-side; and A rinsing process, which is to supply a rinsing liquid containing water to the front side of the above-mentioned substrate after the above-mentioned SPM reduction process; The cooling liquid has the same liquid temperature as the flushing liquid. A substrate processing method comprising: An SPM process that supplies SPM to the front side of the substrate held in a horizontal position by a substrate holding unit with the front side of the substrate facing upward; The SPM reduction process is continued after the end of the above-mentioned SPM process. The liquid is not supplied to the front surface of the above-mentioned substrate, but the above-mentioned substrate is rotated around the rotation axis passing through the central part of the above-mentioned substrate, thereby causing SPM to be discharged from the front surface of the above-mentioned substrate. Thereby, the amount of SPM present on the front surface of the above-mentioned substrate is reduced to a state where the front surface of the above-mentioned substrate does not dry out and the SPM present on the front surface of the above-mentioned substrate does not become a liquid film; and The rinsing process is to supply a rinsing liquid containing water to the front side of the substrate after the SPM reduction process. The substrate processing method of any one of claims 1, 7, 9 and 10 further includes a process of supplying SC1 to the front side of the substrate after the above rinse process. A substrate processing device comprising: a substrate holding unit that holds the substrate in a horizontal position with the front side of the substrate facing upward; a rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate; An SPM supply unit configured to supply SPM to the front surface of the substrate held by the substrate holding unit; A rinse liquid supply unit configured to supply rinse liquid containing water to the front surface of the substrate held by the substrate holding unit; and a control device that controls the above-mentioned rotation unit, the above-mentioned SPM supply unit, and the above-mentioned flushing liquid supply unit; and The above-mentioned control device executes: an SPM process, which uses the above-mentioned SPM supply unit to supply heated SPM to the front surface of the above-mentioned substrate; an SPM reduction low temperature process, which is continued at the end of the above-mentioned SPM process, without supplying heated SPM to the front surface of the above-mentioned substrate. The SPM is supplied, and the rotation unit is used to rotate the substrate around a rotation axis passing through the center of the substrate, thereby discharging the SPM from the front side of the substrate, thereby reducing the amount of SPM present on the front side of the substrate to nothing. Drying the front surface of the substrate to a certain extent and lowering the temperature of the substrate; and a rinsing process, which uses the rinsing liquid supply unit to supply rinsing liquid to the front surface of the substrate after the SPM reduction and low temperature process. The substrate processing apparatus of Claim 12, further comprising a coolant supply unit that supplies a liquid with a lower SPM than the SPM supplied to the front face of the substrate to the back face of the substrate opposite to the front face. coolant, and The control device further executes a backside coolant supply process in which the coolant is supplied by the coolant supply unit in parallel with the SPM reducing and low-temperature process. The substrate processing device of claim 12 or 13, wherein the control device starts the rinsing process after reducing the temperature of the front side of the substrate to a specific low temperature through the SPM low temperature reduction process. The substrate processing device of claim 14, further comprising a temperature sensor for detecting the temperature of the substrate, and The above-mentioned control device further executes a temperature detection process in parallel with the above-mentioned SPM reducing low temperature process and uses the above-mentioned temperature sensor to detect the temperature of the above-mentioned substrate, When the detected temperature reaches the specific low temperature, the above control device ends the above SPM reducing low temperature process and starts the above flushing process. The substrate processing device of claim 12 or 13, wherein the control device further executes a first substrate rotation process that is parallel to the SPM process and rotates the substrate around the rotation axis, The control device executes a process of rotating the substrate at a rotation speed that is the same as the first substrate rotation process or faster than the first substrate rotation process in the SPM reduction and low temperature process. The substrate processing device of claim 12 or 13 further includes: A processing cup having a baffle surrounding the substrate holding unit and capturing the processing liquid discharged from the substrate held by the substrate holding unit; An exhaust unit that exhausts the inside of the above-mentioned processing cup; and a baffle lifting unit that raises and lowers the above-mentioned baffle; and The above control device further controls the above exhaust unit and the above baffle lifting unit, The above-mentioned control device further executes: a second substrate rotation process, which is in parallel with the above-mentioned rinsing process, and causes the above-mentioned substrate to rotate around the above-mentioned rotation axis; an in-baffle exhaust process, which is in conjunction with the above-mentioned SPM low temperature reduction process and the above-mentioned rinsing process. Parallel, and exhaust the inside of the above-mentioned baffle; a first height maintenance process, which is in parallel with the above-mentioned flushing process, and maintains the above-mentioned baffle at the first height position; and a second height maintenance process, which is with the above-mentioned flushing process SPM reduces the parallelization of low-temperature processes and maintains the baffle at a second height position higher than the first height position. A substrate processing device comprising: a substrate holding unit that holds the substrate in a horizontal position with the front side of the substrate facing upward; a rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate; An SPM supply unit configured to supply SPM to the front surface of the substrate held by the substrate holding unit; A rinse liquid supply unit configured to supply rinse liquid containing water to the front surface of the substrate held by the substrate holding unit; a coolant supply unit that supplies coolant having a lower liquid temperature than the SPM supplied to the front surface of the substrate to the back surface of the substrate opposite to the front surface; and A control device that controls the above-mentioned rotation unit, the above-mentioned SPM supply unit, the above-mentioned flushing liquid supply unit, and the above-mentioned coolant supply unit; and The above-mentioned control device executes: an SPM process, which uses the above-mentioned SPM supply unit to supply SPM to the front surface of the above-mentioned substrate; an SPM reduction process, which is continued at the end of the above-mentioned SPM process, does not supply SPM to the front surface of the above-mentioned substrate, and uses the above-mentioned rotation The unit rotates the substrate around a rotation axis passing through the center of the substrate, thereby discharging SPM from the front side of the substrate, thereby reducing the amount of SPM present on the front side of the substrate to a level that does not dry the front side of the substrate. degree; a backside coolant supply process, which is in parallel with the above-mentioned SPM reduction process and uses the above-mentioned coolant supply unit to supply the above-mentioned coolant; and a rinse process, which is after the above-mentioned SPM reduction process, uses the above-mentioned rinse liquid supply unit to supply the above-mentioned substrate flushing fluid is supplied from the front; and The coolant supply unit has a central discharge port facing a central portion of the back surface of the substrate held by the substrate holding unit, and a peripheral discharge port facing a peripheral edge portion of the back surface of the substrate held by the substrate holding unit. ,and In the back surface coolant supply process, the control device executes a central ejection process of ejecting the coolant from the central ejection port toward the central portion of the back surface of the substrate, and executes a central ejection process in parallel with the central ejection process and from the peripheral portion. A peripheral portion discharging process in which the discharge port discharges the cooling liquid toward the peripheral portion of the back surface of the substrate. The substrate processing device of claim 13 or 18, wherein the cooling liquid has a higher liquid temperature than the rinse liquid. A substrate processing device comprising: a substrate holding unit that holds the substrate in a horizontal position with the front side of the substrate facing upward; a rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate; An SPM supply unit configured to supply SPM to the front surface of the substrate held by the substrate holding unit; A rinse liquid supply unit configured to supply rinse liquid containing water to the front surface of the substrate held by the substrate holding unit; a coolant supply unit that supplies coolant having a lower liquid temperature than the SPM supplied to the front surface of the substrate to the back surface of the substrate opposite to the front surface; and A control device that controls the above-mentioned rotation unit, the above-mentioned SPM supply unit, the above-mentioned flushing liquid supply unit, and the above-mentioned coolant supply unit; and The above-mentioned control device executes: an SPM process, which uses the above-mentioned SPM supply unit to supply SPM to the front surface of the above-mentioned substrate; an SPM reduction process, which is continued at the end of the above-mentioned SPM process, does not supply SPM to the front surface of the above-mentioned substrate, and uses the above-mentioned rotation The unit rotates the substrate around a rotation axis passing through the center of the substrate, thereby discharging SPM from the front side of the substrate, thereby reducing the amount of SPM present on the front side of the substrate to a level that does not dry the front side of the substrate. degree; a backside coolant supply process, which is in parallel with the above-mentioned SPM reduction process and uses the above-mentioned coolant supply unit to supply the above-mentioned coolant; and a rinse process, which is after the above-mentioned SPM reduction process, uses the above-mentioned rinse liquid supply unit to supply the above-mentioned substrate flushing fluid is supplied from the front; and The cooling liquid has the same liquid temperature as the flushing liquid. A substrate processing device comprising: a substrate holding unit that holds the substrate in a horizontal position with the front side of the substrate facing upward; a rotation unit for rotating the substrate held by the substrate holding unit around a rotation axis passing through the center of the substrate; An SPM supply unit configured to supply SPM to the front surface of the substrate held by the substrate holding unit; A rinse liquid supply unit configured to supply rinse liquid containing water to the front surface of the substrate held by the substrate holding unit; and a control device that controls the above-mentioned rotation unit, the above-mentioned SPM supply unit, and the above-mentioned flushing liquid supply unit; and The above-mentioned control device executes: an SPM process, which uses the above-mentioned SPM supply unit to supply SPM to the front surface of the above-mentioned substrate; an SPM reduction process, which is continued at the end of the above-mentioned SPM process and does not supply liquid to the front surface of the above-mentioned substrate, but uses the above-mentioned rotation The unit rotates the above-mentioned substrate around a rotation axis passing through the center of the above-mentioned substrate, thereby discharging SPM from the front surface of the above-mentioned substrate, thereby reducing the amount of SPM present on the front surface of the above-mentioned substrate to such an extent that the front surface of the above-mentioned substrate does not dry out and remains. The SPM on the front side of the substrate will not be in a liquid film-like state; and a rinsing process, which uses the rinsing liquid supply unit to supply rinsing liquid to the front side of the substrate after the SPM reduction process. The substrate processing apparatus of any one of claims 12, 18, 20 and 21, further comprising an SC1 supply unit for supplying SC1 to the substrate held by the substrate holding unit, and The control device further executes a process of supplying SC1 to the front side of the substrate after the rinse process.