TWI819137B - 用以減少粒子產生的氣體擴散器組件 - Google Patents
用以減少粒子產生的氣體擴散器組件 Download PDFInfo
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- 239000002245 particle Substances 0.000 title description 12
- 230000001154 acute effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 description 33
- 210000002381 plasma Anatomy 0.000 description 30
- 238000009826 distribution Methods 0.000 description 25
- 238000004140 cleaning Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H01J37/32449—Gas control, e.g. control of the gas flow
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Abstract
本揭露之數個實施例一般係提供數種用於一真空腔室之一氣體擴散器組件的設備及方法,氣體擴散器組件包括一固定板材,固定板材包括一中心部;數個彎曲輻條,從中心部在一徑向方向中延伸;數個角板部,耦接於中心部及此些彎曲輻條之間,此些角板部之各者具有一凸形彎曲部,設置於一軸向方向中;以及一或多個固定孔,相鄰於此些彎曲輻條。
Description
本揭露之數個實施例一般係有關於一種固定板材,用於一電漿腔室中使用的一氣體或電漿擴散器。
電漿輔助化學氣相沈積(Plasma enhanced chemical vapor deposition,PECVD)係為一種沈積方法,處理氣體係通過背板、通過擴散器、及接著至氣體分配噴頭來導引至處理腔室中。噴頭係施加偏壓以激化處理氣體成電漿。相反噴頭定位的一底座係電性接地及作為陽極及基板支撐件。處理氣體之電漿係形成一或多個膜於基板上。
內部腔室元件的定期腔室清洗係藉由讓清洗氣體基(gas radicals)之電漿沿著相同於處理氣體之流動路徑流動及通過相同於處理氣體的流動路徑來執行。舉例來說,清洗氣體係在處理腔室之外側激化成電漿及流動通過背板、擴散器、及通過噴頭。清洗氣體基之電漿一般約攝氏400度、或更高,及導致部份的流動路徑膨脹。在清洗之後,部份的氣體路徑係逐漸地冷卻。此種熱循環係在製造週期期間重複多次。
然而,熱循環係導致部份的氣體路徑以不同的速率膨脹或收縮。相鄰部份間的差膨脹(differential expansion)係導致此些部份彼此摩擦,而產生粒子。此些粒子係接著夾帶至流動路徑中且污染腔室。仍舊在流動路徑中之粒子可能夾帶至處理氣體流中,而在沈積製程期間污染基板。基板之粒子污染係減少產量。
因此,用以在處理腔室中支撐氣體擴散器的固定板之設備及方法係有需求的。
本揭露之數個實施例一般係提供數種用於一真空腔室之一氣體擴散器組件的設備及方法,氣體擴散器組件包括一固定板材,固定板材包括一中心部;數個彎曲輻條,從中心部在一徑向方向中延伸;數個角板部,耦接於中心部及此些彎曲輻條之間,此些角板部之各者具有一凸形彎曲部,設置於一軸向方向中;以及一或多個固定孔,耦接於此些彎曲輻條。
於另一實施例中,說明一種用於一真空腔室之氣體擴散器組件,氣體擴散器組件包括一固定板材,固定板材包括一中心部;數個輻條,從中心部在一徑向方向中延伸;數個角板部,耦接於中心部及此些輻條之間,此些角板部之各者具有一凸形彎曲部,設置於一軸向方向中;一或多個固定孔,耦接於此些輻條;及一螺紋孔,形成於中心部中。
於另一實施例中,說明一種用於一真空腔室之氣體擴散器組件,氣體擴散器組件包括一固定板材;以及一氣體致偏器,藉由一單一個緊固件耦接於固定板材。固定板材包括一中心部;數個彎曲輻條,從中心部在一徑向方向中延伸;一或多個固定孔,耦接於此些彎曲輻條。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:
100:腔室
105:大面積基板
110:腔室側壁
115:底部
120:基板支撐件
125:埠
130:蓋結構
135:蓋板材
140:背板
145:氣體分配噴頭
146,147:內部表面
148:可變壓力區域
150:中心支撐構件
155:可彎曲懸架
160:氣體入口
162:孔
164:氣體擴散器組件
165:電漿源
166:氣體致偏器
168,400,500,600,700:固定板材
169,225:緊固件
170:中間區域
175:氣體通道
180:處理區域
184:清洗氣源
186:遠端電漿腔室
190:基板接收表面
205,205A,205B,205C,205D:開孔
210:輻條
215:中心部
220:交叉結構
230:縫隙
235:上表面
240:下表面
245:橫向流動路徑
250:向下流動路徑
255:通孔
260:流動路徑
265:垂直下向氣體或電漿流
270:縱軸
275:螺紋孔
300:圓形固定結構
305:弧狀段
310:固定孔
312:近端
315:遠端
320,335:鈍角部
325,330:銳角部
340:遠端主體
342:軸向方向
345:第一高度
350:第二高度
355:第三高度
360:平面
365:角板部
370,510:凸形彎曲部
405:斜平面
505:弧形表面
515:凹形部
605:斜面
705:斜周圍區域
為了使本揭露的上述特徵可詳細地瞭解,簡要摘錄於上之本揭露之更特有之說明可參照數個實施例。部份之此些實施例係繪示於所附之圖式中。然而,值得注意的是,基於本揭露可承認其他等效實施例來說,所附之圖式係僅繪示出本揭露之典型實施例及因而不視為限制其之範疇。
第1圖繪示依照一腔室之一實施例的側視剖面圖。
第2圖繪示依照本揭露一實施例之具有氣體擴散器組件之腔室的局部剖面圖。
第3A圖繪示沿著第2圖之線3A-3A之氣體擴散器組件之局部底部平面圖。
第3B圖繪示第3A圖之固定板材的側視圖。
第4A圖繪示可作為第1圖之固定板材之固定板材的另一實施例的底部平面圖。
第4B圖繪示第4A圖之固定板材的側視圖。
第5A圖繪示可作為第1圖之固定板材之固定板材的另一實施例的底部平面圖。
第5B圖繪示第5A圖之固定板材的側視圖。
第6A圖繪示可作為第1圖之固定板材之固定板材的另一實施例的底部平面圖。
第6B圖繪示第6A圖之固定板材的側視圖。
第7A圖繪示可作為第1圖之固定板材之固定板材的另一實施例的底部平面圖。
第7B圖繪示第7A圖之固定板材的側視圖。
為了有助於理解,相同之參考編號係在可行處使用,以表示通用於圖式之相同的元件。亦理解的是,一實施例之數個元件及數個特徵可有利地併入其他實施例,而無需進一步闡述。
本揭露之數個實施例一般係提供數種用以在一處理腔室中支撐一氣體擴散器之設備及方法。本揭露將說明於下而與一電漿輔助化學氣相沈積(plasma enhanced chemical vapor deposition,PECVD)設備相關,此PECVD設備係取自美商業凱科技股份有限公司(AKT America,Inc.),美商業凱科技股份有限公司為位於加州之聖塔克拉拉(Santa Clara)之美商應用材料科技股份有限公司(Applied Materials,Inc.)之子公司。將理解的
是,本揭露可亦在其他沈積腔室中具有適用性,其他沈積腔室包括從其他製造商取得之沈積腔室及PECVD設備。
第1圖繪示依照一腔室100之一實施例的側視剖面圖。腔室100係適用於PECVD製程,用以製造電路於以玻璃、聚合物製成之大面積基板105或其他適合之基板上。腔室100係裝配以形成數個結構及數個裝置於大面積基板105上,大面積基板105係使用於液晶顯示器(liquid crystal displays,LCDs)或平面顯示器、用於太陽能電池陣列之光伏裝置、或其他結構之製造中。此些結構可為數個背通道蝕刻反轉堆疊式(back channel etch inverted staggered)(下閘極)薄膜電晶體,可包括數個相繼的沈積及遮蔽步驟。其他結構可包括p-n接面,以形成用於光伏電池之二極體。
腔室100包括腔室側壁110、底部115、及基板支撐件120。基板支撐件120例如是在處理期間支撐大面積基板105的底座。氣體分配噴頭145係定位而相反於基板支撐件120及大面積基板105。腔室100亦具有埠125,例如是狹縫閥開孔,藉由選擇地開啟及關閉來有助於大面積基板105傳送進入及離開腔室100。腔室100亦包括蓋結構130、背板140、及氣體分配噴頭145。蓋結構130包括蓋板材135。於一實施例中,蓋結構130支撐背板140及氣體分配噴頭145。於一實施例中,背板140之內部表面146及腔室側壁110之內部表面147係界定可變壓力區域148。於一方面中,腔室100包括主體,此主體包括腔室側壁110、底部115及
背板140,界定可變壓力區域148。背板140係藉由在介面處之適合o形環於其之周圍密封,背板140及蓋結構130可在介面處彼此接觸。當負壓係藉由耦接於腔室100之真空幫浦提供時,o形環有助於電性隔絕及密封可變壓力區域148。
於一實施例中,藉由一或多個中心支撐構件150,氣體分配噴頭145係於其之中心區域藉由背板140支撐。此一或多個中心支撐構件150係有助於在氣體分配噴頭145之中間區域支撐氣體分配噴頭145,以控制氣體分配噴頭145之水平輪廓來減緩氣體分配噴頭145因熱、重力及真空之組合所導致的下彎(droop)或下垂(sag)的趨勢。氣體分配噴頭145可亦於其之周圍藉由可彎曲懸架155支撐。可彎曲懸架155係適用於從氣體分配噴頭145之邊緣支撐氣體分配噴頭145,及提供氣體分配噴頭145之橫向擴展及收縮。
腔室100係耦接於氣體入口160,氣體入口160耦接於氣源及電漿源165。電漿源165可為直流電源或射頻(radio frequency,RF)電源。RF電源可為感應或電容耦接於腔室100。氣體入口160從氣源通過孔162傳送處理氣體至氣體擴散器組件164。氣體擴散器組件164包括有孔的氣體致偏器166及固定板材168。固定板材168係藉由數個緊固件169耦接於背板140。氣體致偏器166係緊固於固定板材168之中心。氣體致偏器166係從孔162通過固定板材168接收氣體。
全部之背板140、氣體致偏器166及固定板材168可包括金屬材料,例如是鋁。
氣體係流動通過孔162至固定板材168,及藉由氣體致偏器166遍佈至中間區域170中,中間區域170定義於背板140及氣體分配噴頭145之間。於操作的一例子中,當腔室100之內部體積已經藉由真空幫浦抽氣至適當的壓力時,處理氣體係從氣源傳送。一或多個處理氣體係流動通過氣體入口160至固定板材168及氣體致偏器166而至中間區域170,中間區域170定義於背板140及氣體分配噴頭145之間。此一或多個處理氣體係接著從中間區域170流動通過數個開孔或氣體通道175至處理區域180。此些開孔或氣體通道175係通過氣體分配噴頭145形成。處理區域180定義於氣體分配噴頭145之下方及基板支撐件120之上方的區域中。
藉由移動基板支撐件120朝向氣體分配噴頭145,大面積基板105係從傳送位置升高至處理區域180。基於氣體分配噴頭145之下表面及基板支撐件120之基板接收表面190之間的間距,處理區域180的高度可作為製程參數而變化。基板支撐件120可藉由整合式加熱器(integral heater)加熱,整合式加熱器例如是加熱線圈或電阻加熱器,耦接於基板支撐件120或設置於基板支撐件120中。
藉由耦接於腔室100之電漿源165,電漿可形成於處理區域180中。電漿激化之氣體係沈積於大面積基板105上以形成
數個結構於大面積基板105上。於一實施例中,基板支撐件120係在接地電位,以有助於電漿形成於處理區域180中。電漿可亦藉由其他方式形成於腔室100中,例如是熱致電漿(thermally induced plasma)。雖然電漿源165係於此實施例中繪示成耦接於氣體入口160,電漿源165可耦接於氣體分配噴頭145或腔室100之其他部份。
在處理大面積基板105之後,大面積基板105係傳送離開腔室100,及清洗製程係執行。例如是含氟氣體之清洗氣體係從清洗氣源184提供。清洗氣體係在遠端電漿腔室186中激化成電漿。清洗氣體之電漿係流動通過氣體入口160之孔162,及通過固定板材168,電漿係在固定板材168藉由氣體致偏器166遍佈。電漿係接著流動通過氣體分配噴頭145之氣體通道175,以清洗腔室之腔室內部表面。
傳統之氣體擴散設備包括分離之部件,分離之部件係以螺釘或其他方式緊固於作為致偏器之固定板材的背板140之下表面。然而,熱電漿係導致背板140及固定板材之間的差膨脹,及/或固定板材本身之主體中的差膨脹。腔室100之持續的熱循環係導致傳統之氣體擴散設備的部件摩擦背板140,特別是傳統之固定板材,進而產生粒子。舉例來說,傳統之固定板材的固定點係膨脹及摩擦板材而產生粒子。此外,利用來耦接傳統之氣體擴散設備於背板140之緊固件包括陽極化塗層,此陽極化塗層可能因差
膨脹而磨損,進而產生更多的粒子。粒子已經發現藉由腔室100中之氣流夾帶及部份之粒子係污染基板。
第2圖繪示依照本揭露一實施例之具有氣體擴散器組件164之腔室100的局部剖面圖。氣體擴散器組件164包括固定板材168及氣體致偏器166。固定板材168耦接於背板140,氣體致偏器166耦接於固定板材168。
第3A圖繪示沿著第2圖之線3A-3A之氣體擴散器組件164之局部底部平面圖。第3B圖繪示第3A圖之固定板材168之側視圖。
如第2、3A及3B圖中所示,固定板材168包括數個開孔205A-205D(在第2圖中表示成205)。各開孔205A-205D係藉由輻條210分離。各輻條210係結合於在中心部215之背板140的幾何中心。
於所示之實施例中,各輻條210係在其之周圍連結至圓形固定結構300。圓形固定結構300包括數個弧狀段305。此些弧狀段305的各者包括固定孔310。各固定孔310容置其中一個緊固件169(繪示於第2圖中)。
各輻條210包括交叉結構220。各開孔205A-205D係提供於由輻條210所分離之四分之一圓(quadrants)中。各開孔205A-205D係調整尺寸,以最大化氣流或傳導。利用此處所述之交叉結構220,開孔205A-205D之開放區域(open area)係自傳統
之氣體擴散設備增加約50%,或更多。於一實施例中,開孔205A-205D之開放區域係約7平方英吋。
如第3A圖中所示,輻條210具有從中心部215在徑向方向中的第一或近端312及第二或遠端315。各輻條210之遠端315包括位於徑向方向中的鈍角部320及銳角部325。於一些實施例中,各輻條210之近端312包括位在徑向方向中的銳角部330及鈍角部335。遠端主體340係藉由輻條210之鈍角部320及銳角部325形成。於一些實施例中(繪示於第4A、5A、6A及7A),固定孔310係形成於遠端主體340中。
參照第3B圖,固定板材168包括於軸向方向342中之第一厚度或第一高度345。第一高度345包括中心部215。固定板材168包括在軸向方向342中之第二厚度或第二高度350,第二高度350少於第一高度345。第二高度350包括固定孔310。固定板材168包括於軸向方向342中之第三厚度或第三高度355,第三高度355少於第二高度350。第三高度355包括各輻條210之大部份厚度。
於一些實施例中,固定板材168之中心部215包括平面360。繪示於第3B圖中之固定板材168亦包括角板部365,設置於中心部215及輻條210之間。各角板部365具有一厚度或高度,此高度係在第一高度345及第三高度355之間。於所繪示之實施例中,角板部365包括在軸向方向342中之凸形彎曲部370,凸形彎曲部370從輻條210轉變至中心部215。
再度參照第2圖,固定板材168係藉由此些緊固件169耦接於背板140。氣體致偏器166係藉由單一個緊固件225耦接於固定板材168。緊固件225係為螺釘或螺絲,例如是肩螺絲(shoulder screw)。緊固件225係耦接於螺紋孔275,螺紋孔275形成於中心部215中(以虛線繪示於第3A圖中)。緊固件225亦維持氣體致偏器166之上表面235及背板140及/或固定板材168之下表面240之間的縫隙230。
於操作中,來自第1圖之氣源的氣體或來自第1圖之遠端電漿腔室186之清洗氣體係流動通過孔162。此流動係沿著通過固定板材168之開孔205A-205D的傳導路徑至中間區域170中,中間區域170定義於背板140及氣體分配噴頭145之間。傳導路徑包括多個流動路徑,例如是氣體致偏器166附近之橫向流動路徑245及通過數個通孔255之向下流動路徑250。此些通孔255係形成於氣體致偏器166中。傳導路徑經由通過氣體通道175之流動路徑260持續至處理區域180。氣體通道175係通過氣體分配噴頭145形成。
輻條210係定位在交叉結構220中之90度間隔處。於一實施例中,輻條210係沿著長度或徑向方向彎曲。在溫度起伏期間,輻條210之彎曲裝配及厚度(第三高度355)係提供彈性,以提供固定板材168在遠離緊固件169之區域膨脹及收縮。此係避免背板140及固定板材16之間的摩擦接觸,而減少粒子產生。
於一實施例中,縫隙230(位在背板140及氣體致偏器166之間)係為約0.15英吋至約0.5英吋。於一實施例中,縫隙230係為約0.25英吋。
於一實施例中,通孔255係均勻地分佈在氣體致偏器166之主表面。於一實施例中,各通孔255具有約0.05英吋至約0.2英吋之間的直徑。於一實施例中,各通孔255具有約0.1英吋之直徑。
如第2圖中所示,氣體致偏器166實質上阻擋大部份來自孔162之垂直下向氣體或電漿流265,以及產生實質上水平之橫向流動路徑245。橫向流動路徑245實質上平行於背板140及氣體分配噴頭145。小部份的垂直向下氣體或電漿流265係通過氣體致偏器166中之此些通孔255及產生向下流動路徑250。向下流動路徑250一般平行於背板140及/或腔室100的縱軸270。
第4A圖繪示可作為第1圖之固定板材168之固定板材400的另一實施例的底部平面圖。第4B圖繪示第4A圖之固定板材400的側視圖。
固定板材400係在具有下述之例外下類似於固定板材168。固定板材400不包括如第3A圖中所示的圓形固定結構300。取而代之,固定孔310係定位於遠端主體340中之輻條210的端上。此外,角板部365包括斜平面405,從輻條210轉變至中心部215。
第5A圖繪示可作為第1圖之固定板材168之固定板材500的另一實施例的底部平面圖。第5B圖繪示第5A圖之固定板材500的側視圖。
固定板材500係在具有下述之例外下類似於固定板材400。固定板材500之中心部215包括弧形表面505(繪示於第5B圖中)。固定板材500亦包括角板部365,具有凸形彎曲部510。凸形彎曲部510具有一半徑,實質上類似於弧形表面505之半徑。凸形彎曲部510藉由凹形部515耦接於輻條210。凹形部515係在凸形彎曲部510之徑向外部。
第6A圖繪示可作為第1圖之固定板材168之固定板材600的另一實施例的底部平面圖。第6B圖繪示第6A圖之固定板材600的側視圖。
固定板材600係在具有下述之例外下類似於固定板材500。固定板材600包括角板部365,具有凸形彎曲部510。凸形彎曲部510具有一半徑,實質上類似於弧形表面505之半徑。凸形彎曲部510藉由斜面605耦接於輻條210。斜面605係在凸形彎曲部510之徑向外部。
第7A圖繪示可作為第1圖之固定板材168之固定板材700的另一實施例的底部平面圖。第7B圖繪示第7A圖之固定板材700的側視圖。
固定板材700係在具有下述之例外下類似於固定板材600或第4A-4B圖之固定板材400。固定板材700包括角板部
365,但亦包括在中心部215之邊緣上的斜周圍區域705。角板部365具有斜平面405。
此處所述之氣體擴散器組件164係實質上減少粒子形成及其他傳統之氣體擴散設備所面臨的問題。相較於傳統之氣體擴散設備,在此處所述之氣體擴散器組件164中可能致使部件之間摩擦的應力係顯著地減少。舉例來說,此處所述之固定板材的最大橫向變形係減少大於10%。利用此處所述之固定板材,最大垂直變形係減少大於98%。利用此處所述之固定板材,最大之範式等效應力(Von-Mises stress)係減少大約80%。利用此處所述之固定板材,反作用力(意指背板140及傳統之氣體擴散設備之間的摩擦)係減少大於99%。利用此處所述之固定板材,反作用力矩(意指傳統之氣體擴散設備的固定硬體之間的摩擦)係減少大於98%。
在前述係有關於本揭露之數個實施例的情況下,本揭露之其他及進一步實施例可在不脫離其之基本範疇脫離下發想,及其之範疇係由下方之申請專利範圍決定。綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100:腔室
105:大面積基板
120:基板支撐件
140:背板
145:氣體分配噴頭
160:氣體入口
162:孔
164:氣體擴散器組件
166:氣體致偏器
168:固定板材
169,225:緊固件
170:中間區域
175:氣體通道
180:處理區域
205:開孔
210:輻條
215:中心部
230:縫隙
235:上表面
240:下表面
245:橫向流動路徑
250:向下流動路徑
255:通孔
260:流動路徑
265:垂直下向氣體或電漿流
270:縱軸
275:螺紋孔
Claims (20)
- 一種氣體擴散器組件,用於一真空腔室,該氣體擴散器組件包括:一固定板材,該固定板材包括:一中心部;複數個彎曲輻條,從該中心部在一徑向方向中延伸;複數個角板部,耦接於該中心部及該些彎曲輻條之間,該些角板部之各者具有一凸形彎曲部,設置於一軸向方向中;以及一或多個固定孔,相鄰於該些彎曲輻條。
- 如請求項1所述之氣體擴散器組件,其中該一或多個固定孔之各者係形成於該些彎曲輻條之間的一圓形固定結構中。
- 如請求項1所述之氣體擴散器組件,其中該一或多個固定孔的其中一者係定位在該些彎曲輻條之各者的一遠端。
- 如請求項1所述之氣體擴散器組件,其中該些彎曲輻條之各者係包括一遠端主體。
- 如請求項4所述之氣體擴散器組件,其中該些彎曲輻條之各者更包括一銳角部及一鈍角部,該銳角部及該鈍角部位於該遠端主體。
- 如請求項1所述之氣體擴散器組件,其中該些彎曲輻條之各者包括一銳角部及一鈍角部。
- 如請求項1所述之氣體擴散器組件,其中該中心部包括一平面。
- 如請求項1所述之氣體擴散器組件,其中該中心部包括一弧形表面。
- 如請求項1所述之氣體擴散器組件,其中該些角板部之各者係位於該中心部及該些彎曲輻條之各者之間。
- 一種氣體擴散器組件,用於一真空腔室,該氣體擴散器組件包括:一固定板材,該固定板材包括:一中心部;複數個輻條,從該中心部在一徑向方向中延伸;複數個角板部,耦接於該中心部及該些輻條之間,該些角板部之各者具有一凸形彎曲部,設置於一軸向方向中;一或多個固定孔,相鄰於該些輻條;以及一螺紋孔,形成於該中心部中。
- 如請求項10所述之氣體擴散器組件,其中該一或多個固定孔之各者係形成於該些輻條之間的一圓形固定結構中。
- 如請求項10所述之氣體擴散器組件,其中該一或多個固定孔的其中一者係定位在該些輻條之各者的一遠端。
- 如請求項10所述之氣體擴散器組件,其中該些輻條之各者係包括一遠端主體。
- 如請求項13所述之氣體擴散器組件,其中該些輻條之各者更包括一銳角部及一鈍角部,該銳角部及該鈍角部位於該遠端主體。
- 如請求項10所述之氣體擴散器組件,其中該些輻條之各者包括一銳角部及一鈍角部。
- 如請求項10所述之氣體擴散器組件,其中該中心部包括一平面。
- 如請求項10所述之氣體擴散器組件,其中該中心部包括一弧形表面。
- 一種氣體擴散器組件,用於一真空腔室,該氣體擴散器組件包括:一固定板材;以及一氣體致偏器,藉由一單一個緊固件耦接於該固定板材,其中該固定板材包括:一中心部;複數個彎曲輻條,從該中心部在一徑向方向中延伸;及一或多個固定孔,耦接於該些彎曲輻條。
- 如請求項18所述之氣體擴散器組件,其中該些彎曲輻條係位於該中心部上之複數個90度間隔處。
- 如請求項18所述之氣體擴散器組件,其中該些彎曲輻條之各者包括一遠端主體以及一銳角部及一鈍角部。
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US16/201,755 US10883174B2 (en) | 2018-11-27 | 2018-11-27 | Gas diffuser mounting plate for reduced particle generation |
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JP (2) | JP7210730B2 (zh) |
KR (2) | KR20210081449A (zh) |
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US10927461B2 (en) * | 2018-08-31 | 2021-02-23 | Applied Materials, Inc. | Gas diffuser support structure for reduced particle generation |
CN211972444U (zh) * | 2020-04-23 | 2020-11-20 | 京东方科技集团股份有限公司 | 一种导流器及等离子化学气相沉积设备 |
CN115668436A (zh) * | 2020-05-20 | 2023-01-31 | 朗姆研究公司 | 远程等离子体清洁(rpc)定向流设备 |
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CN113166939A (zh) | 2021-07-23 |
KR20230155010A (ko) | 2023-11-09 |
TW202417678A (zh) | 2024-05-01 |
US20200165726A1 (en) | 2020-05-28 |
WO2020112282A1 (en) | 2020-06-04 |
KR20210081449A (ko) | 2021-07-01 |
JP2023055713A (ja) | 2023-04-18 |
JP2022508209A (ja) | 2022-01-19 |
US10883174B2 (en) | 2021-01-05 |
CN113166939B (zh) | 2023-09-22 |
CN117431529A (zh) | 2024-01-23 |
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JP7210730B2 (ja) | 2023-01-23 |
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