TWI805344B - Temperature testing system and temperature testing method thereof - Google Patents
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Abstract
Description
本發明是有關於一種溫度測試技術,且特別是有關於一種溫度測試系統及其溫度測試方法。The present invention relates to a temperature testing technology, and in particular to a temperature testing system and a temperature testing method thereof.
針對積體電路的溫度測試技術,習知的溫度測試系統通常僅會利用溫度感測器來感測環境溫度,並依據所感測到的環境溫度來對待測裝置(亦即,待測的積體電路)的溫度曲線進行校正。For the temperature testing technology of integrated circuits, conventional temperature testing systems usually only use temperature sensors to sense the ambient temperature, and according to the sensed ambient temperature, the device to be tested (that is, the IC to be tested circuit) to correct the temperature curve.
然而,隨著對於溫度的精確度要求愈來愈高,習知技術的溫度測試方式仍存在著較大的溫度誤差,進而使得溫度測試技術的良率將會降低。有鑑於此,如何有效地實現精確的積體電路的溫度測試技術,以降低溫度測試的良率損失,將是本領域相關技術人員重要的課題。However, as the requirement for temperature accuracy is getting higher and higher, the conventional temperature testing method still has a relatively large temperature error, which further reduces the yield rate of the temperature testing technology. In view of this, how to effectively implement an accurate temperature testing technology for integrated circuits to reduce the yield loss of temperature testing will be an important subject for those skilled in the art.
本發明提供一種溫度測試系統及其溫度測試方法,能夠有效地提升對待測裝置進行溫度測試時的良率。The invention provides a temperature testing system and a temperature testing method thereof, which can effectively improve the yield rate of a device to be tested when performing temperature testing.
本發明的溫度測試系統包括標準感測器、待測裝置以及處理器。標準感測器感測多個標準環境溫度以分別產生多個參考值。待測裝置感測多個操作溫度以產生多個測試值。處理器耦接至所述待測裝置以及所述溫度感測器,其中所述處理器用以:根據所述多個參考值的其中之一與對應的各所述標準環境溫度的差以獲得第一偏移值,並根據所述第一偏移值以及所述多個參考值以產生第一校正曲線;根據所述第一偏移值來調整所述多個測試值以獲得多個第二校正值;根據所述多個第二校正值以及所述多個標準環境溫度以計算出多個預測溫度值;計算所述多個預測溫度值的其中之一與相對應的各所述標準環境溫度的差以產生第二偏移值;以及根據所述第二偏移值以調整所述多個預測溫度值,並根據調整後的所述多個預測溫度值以產生第二校正曲線。The temperature testing system of the present invention includes a standard sensor, a device to be tested and a processor. The standard sensor senses a plurality of standard ambient temperatures to generate a plurality of reference values respectively. The device under test senses multiple operating temperatures to generate multiple test values. The processor is coupled to the device under test and the temperature sensor, wherein the processor is configured to: obtain a second temperature based on the difference between one of the plurality of reference values and the corresponding standard ambient temperature. an offset value, and generate a first calibration curve according to the first offset value and the plurality of reference values; adjust the plurality of test values according to the first offset value to obtain a plurality of second Correction value; calculate a plurality of predicted temperature values according to the plurality of second correction values and the plurality of standard ambient temperatures; calculate one of the plurality of predicted temperature values and the corresponding standard environment temperature difference to generate a second offset value; and adjust the plurality of predicted temperature values according to the second offset value, and generate a second calibration curve according to the adjusted plurality of predicted temperature values.
在本發明的溫度測試系統的溫度測試方法包括:提供標準感測器感測多個標準環境溫度以分別產生多個參考值;提供待測裝置感測多個操作溫度以產生多個測試值;由處理器根據所述多個參考值的其中之一與對應的各所述標準環境溫度的差以獲得第一偏移值,並根據所述第一偏移值以及所述多個參考值以產生第一校正曲線;由所述處理器根據所述第一偏移值來調整所述多個測試值以獲得多個第二校正值;由所述處理器根據所述多個第二校正值以及所述多個標準環境溫度以計算出多個預測溫度值;由所述處理器計算所述多個預測溫度值的其中之一與相對應的各所述標準環境溫度的差以產生第二偏移值;以及由所述處理器根據所述第二偏移值以調整所述多個預測溫度值,並根據調整後的所述多個預測溫度值以產生第二校正曲線。The temperature testing method in the temperature testing system of the present invention includes: providing a standard sensor to sense a plurality of standard ambient temperatures to generate a plurality of reference values respectively; providing a device to be tested to sense a plurality of operating temperatures to generate a plurality of test values; The processor obtains a first offset value according to the difference between one of the plurality of reference values and the corresponding standard ambient temperature, and obtains a first offset value according to the first offset value and the plurality of reference values to generating a first correction curve; adjusting the plurality of test values by the processor according to the first offset value to obtain a plurality of second correction values; by the processor according to the plurality of second correction values and the plurality of standard ambient temperatures to calculate a plurality of predicted temperature values; the difference between one of the plurality of predicted temperature values and the corresponding standard ambient temperatures is calculated by the processor to generate a second an offset value; and adjusting the plurality of predicted temperature values by the processor according to the second offset value, and generating a second calibration curve according to the adjusted plurality of predicted temperature values.
基於上述,在本發明諸實施例所述溫度測試系統及其溫度測試方法中,處理器可以在完成第一的溫度校正動作之後,進一步地依據第二校正值、第三校正值以及待測裝置所產生的多個測試值,並透過目標函數以產生第二校正曲線,藉以對溫度測試系統進行第二次的溫度校正動作。如此一來,處理器能夠使得第二校正曲線可以更加趨近於標準溫度曲線,藉以提升溫度測試系統對待測裝置進行溫度測試時的良率,並降低溫度測試時的良率損失。Based on the above, in the temperature testing system and its temperature testing method described in various embodiments of the present invention, the processor can further base on the second correction value, the third correction value and the device under test after completing the first temperature correction action. The multiple test values generated are used to generate a second calibration curve through the objective function, so as to perform a second temperature calibration action on the temperature testing system. In this way, the processor can make the second calibration curve closer to the standard temperature curve, so as to improve the yield rate of the temperature test system and reduce the yield loss during the temperature test.
在本案說明書全文(包括申請專利範圍)中所使用的「耦接(或連接)」一詞可指任何直接或間接的連接手段。舉例而言,若文中描述第一裝置耦接(或連接)於第二裝置,則應該被解釋成該第一裝置可以直接連接於該第二裝置,或者該第一裝置可以透過其他裝置或某種連接手段而間接地連接至該第二裝置。另外,凡可能之處,在圖式及實施方式中使用相同標號的元件/構件/步驟代表相同或類似部分。不同實施例中使用相同標號或使用相同用語的元件/構件/步驟可以相互參照相關說明。The term "coupled (or connected)" used throughout the specification of this case (including the scope of claims) may refer to any direct or indirect means of connection. For example, if it is described in the text that a first device is coupled (or connected) to a second device, it should be interpreted that the first device can be directly connected to the second device, or the first device can be connected to the second device through other devices or certain A connection means indirectly connected to the second device. In addition, wherever possible, elements/components/steps using the same reference numerals in the drawings and embodiments represent the same or similar parts. Elements/components/steps using the same symbols or using the same terms in different embodiments can refer to related descriptions.
圖1是依照本發明一實施例說明一種溫度測試系統的示意圖。請參照圖1,溫度測試系統100包括標準感測器110、待測裝置120、記憶體130以及處理器140。其中,本實施例的標準感測器110可例如是溫度感測器,待測裝置120可例如是待進行溫度測試的積體電路(Integrated Circuit),但並不限於此。FIG. 1 is a schematic diagram illustrating a temperature testing system according to an embodiment of the present invention. Referring to FIG. 1 , the
在本實施例中,標準感測器110可用以感測環境中的多個標準環境溫度T1~TN(亦即,實際環境溫度),並依據所感測到的多個標準環境溫度T1~TN以對應地產生多個參考值RF1~RFN。待測裝置120可用以感測待測裝置120的多個操作溫度,並依據所感測到的多個操作溫度以對應地產生多個測試值TS1~TSN。其中,待測裝置120可藉由輸入多個不同的電壓以獲得對應的多個不同的操作溫度,且其實施細節及相關運作為本領域技術人員所熟知,故在此不再贅述。其中,上述的N為正整數。In this embodiment, the
記憶體130耦接至標準感測器110以及待測裝置120。記憶體130可用以儲存多個參考值RF1~RFN以及多個測試值TS1~TSN。記憶體130可設置於待測裝置120的內部或待測裝置120的外部,本發明並未特別限制。本實施例的記憶體130可例如是可變電阻式記憶體(Resistive random-access memory, RRAM)、鐵電隨機存取記憶體(Ferroelectric RAM, FeRAM)、磁阻隨機存取記憶體(magnetoresistiveRAM, MRAM)、相變式隨機存取記憶體(Phase changeRAM, PRAM)、導通微通道記憶體(Conductive bridge RAM, CBRAM)、任何型態的固定式或可移動式隨機存取記憶體(random access memory,RAM)、唯讀記憶體(read-only memory,ROM)或快閃記憶體(flash memory)。The
在另一方面,處理器140耦接至記憶體130。處理器140可自記憶體130接收(或讀取)參考值RF1~RFN以及測試值TS1~TSN。在本實施例中,處理器140可對這些參考值RF1~RFN以及這些測試值TS1~TSN進行分析運算,以產生與待測裝置120相關聯的校正曲線CV1以及校正曲線CV2。On the other hand, the
圖2A至圖2C是依照本發明圖1一實施例的多個溫度曲線的示意圖。請同時參照圖1以及圖2A,在本實施例中,處理器140可依據多個標準環境溫度T1~TN以獲得溫度測試系統100的工作溫度以及溫度測試系統100的工作電壓之間的標準溫度曲線STC。而在標準感測器110將參考值RF1~RFN儲存至記憶體130之後,處理器140可依據這些參考值RF1~RFN以獲得所述工作溫度以及所述工作電壓之間的第一溫度曲線TC1。2A to 2C are schematic diagrams of multiple temperature curves according to an embodiment of the present invention shown in FIG. 1 . Please refer to FIG. 1 and FIG. 2A at the same time. In this embodiment, the
其中,在圖2A中,標準溫度曲線STC可用以表示環境中的理想溫度狀態,而第一溫度曲線TC1則可用以表示標準感測器110在環境中所感測到的實際溫度狀態。Wherein, in FIG. 2A , the standard temperature curve STC can be used to represent the ideal temperature state in the environment, and the first temperature curve TC1 can be used to represent the actual temperature state sensed by the
接著,請同時參照圖1以及圖2B,處理器140可依據第一溫度曲線TC1上的參考值RF1~RFN中的其中之一與對應的標準溫度曲線STC上的標準環境溫度T1~TN之間差值,以獲得第一溫度曲線TC1與標準溫度曲線STC之間的第一偏移值OFFSET1。舉例而言,處理器140可以以標準溫度曲線STC上為25度(°C)的標準環境溫度作為基準值,並判斷出在第一溫度曲線TC1上對應於為25°C的標準環境溫度的參考值,且將所述參考值與所述基準值進行相減以獲得第一溫度曲線TC1與標準溫度曲線STC之間的偏移值OFFSET1。Next, please refer to FIG. 1 and FIG. 2B at the same time. The
進一步來說,在計算出第一偏移值OFFSET1之後,處理器140可使第一溫度曲線TC1上的參考值RF1~RFN分別與第一偏移值OFFSET1進行相減,以使第一溫度曲線TC1朝著標準溫度曲線STC的方向向下平移第一偏移值OFFSET1的單位量,藉以使第一溫度曲線TC1趨近於標準溫度曲線STC。Further, after calculating the first offset value OFFSET1, the
因此,處理器140可依據標準環境溫度T1~TN、參考值RF1~RFN以及第一偏移值OFFSET1以對溫度測試系統100進行第一次的溫度校正動作,並獲得所述工作溫度以及所述工作電壓之間的第一校正曲線CV1(如圖2B所示)。Therefore, the
在另一方面,請同時參照圖1以及圖2C,在處理器140產生第一校正曲線CV1之後,處理器140可接續地自記憶體130接收(讀取)測試值TS1~TSN。在本實施例中,處理器140可依據測試值TS1~TSN、第一偏移值OFFSET1以及標準環境溫度T1~TN,並透過目標函數ML以對溫度測試系統100進行第二次的溫度校正動作,藉以獲得所述工作溫度以及所述工作電壓之間的第二校正曲線CV2(如圖2C所示)。On the other hand, please refer to FIG. 1 and FIG. 2C at the same time. After the
如此一來,本實施例的處理器140能夠透過兩次的溫度校正動作使第二校正曲線CV2更加趨近於標準溫度曲線STC,藉以提升溫度測試系統100對待測裝置120進行溫度測試時的良率。In this way, the
關於溫度曲線的校正動作的實施細節,將於圖3A以及圖3B中所提出的範例來進行說明。其中,圖3A至圖3B是依照本發明圖1另一實施例的多個溫度曲線的示意圖。The implementation details of the correction action of the temperature curve will be described with the example presented in FIG. 3A and FIG. 3B . 3A to 3B are schematic diagrams of multiple temperature curves according to another embodiment of FIG. 1 of the present invention.
對此,為了方便說明,如表(1)所示,在本實施例中,假設處理器140針對環境中為10°C、25°C以及70°C的標準環境溫度進行取樣。In this regard, for the convenience of description, as shown in Table (1), in this embodiment, it is assumed that the
標準感測器110可依據這些標準環境溫度(10°C、25°C以及70°C)以對應地產生為11°C、27°C以及67°C的參考值。待測裝置120可依據待測裝置120在這些標準環境溫度(10°C、25°C以及70°C)下的操作溫度,以對應地產生為12°C、28°C以及74°C的測試值。
請同時參照圖1以及圖3A,詳細來說,處理器140可自記憶體130接收為11°C、27°C以及67°C的參考值,並且依據這些參考值以獲得第一溫度曲線TC1。接著,處理器140可以以標準溫度曲線STC上為25°C的標準環境溫度作為基準值,並將第一溫度曲線TC1上為27°C的參考值與為25°C的標準環境溫度進行相減,以計算出第一溫度曲線TC1與標準溫度曲線STC之間的第一偏移值OFFSET1為2°C。Please refer to FIG. 1 and FIG. 3A at the same time. Specifically, the
在處理器140計算出第一偏移值OFFSET1之後,處理器140可將第一溫度曲線TC1上的多個參考值(11°C、27°C以及67°C)分別與為2°C的第一偏移值OFFSET1進行相減,以獲得如表(2)所示的多個第一校正值CC1(9°C、25°C以及65°C)。並且,處理器140可依據為9°C、25°C以及65°C的第一校正值CC1以產生第一校正曲線CV1。
換句話說,在本實施例中,溫度測試系統100可依據第一校正值CC1以及標準感測器110所產生的多個參考值來對溫度測試系統100進行第一次的溫度校正動作。In other words, in this embodiment, the
在另一方面,在溫度測試系統100完成了第一次的溫度校正動作之後,處理器140可接續地自記憶體130接收為12°C、28°C以及74°C的測試值。接著,處理器140可將為12°C、28°C以及74°C的測試值分別與第一偏移值OFFSET1(2°C)進行相減,以獲得如表(2)所示的多個第二校正值CC2(10°C、26°C以及72°C)。此時,處理器140可依據為10°C、26°C以及72°C的第二校正值CC2以獲得第二溫度曲線TC2。On the other hand, after the
特別一提的是,在本實施例中,處理器140可依據多個第二校正值CC2(10°C、26°C以及72°C)以及多個標準環境溫度(10°C、25°C以及70°C)以產生目標函數ML。In particular, in this embodiment, the
在本實施例中,目標函數ML可例如為線性回歸函數(linear regression)。處理器140可依據多個第二校正值CC2(10°C、26°C以及72°C)以及多個標準環境溫度(10°C、25°C以及70°C)以透過最小二乘法(least squares method)分析的方式來產生目標函數ML。In this embodiment, the objective function ML may be, for example, a linear regression function (linear regression). The
舉例而言,本實施例的目標函數ML可例如為下述式子(1),其中,下述式子(1)的X為標準環境溫度,下述式子(1)的Y為預測溫度值,且下述式子(1)的n為溫度樣本數量: Y=a+bX (1) For example, the objective function ML of this embodiment can be, for example, the following formula (1), wherein, X in the following formula (1) is the standard ambient temperature, and Y in the following formula (1) is the predicted temperature value, and n in the following formula (1) is the number of temperature samples: Y=a+bX (1)
其中,參數b=((X與對應Y乘積之和)-n*(X的平均數)*(Y的平均數))/((X的平方之和)-n*(X的平均數的平方)) =(10 * 10 + 25 * 26 + 70 * 72 - 3 * 35 * 36) / (10 * 10 + 25 * 25 + 70 * 70 - 3 * 35 * 35) =2010/1950 =1.03 Among them, the parameter b=((the sum of the products of X and the corresponding Y)-n*(the average of X)*(the average of Y))/((the sum of the squares of X)-n*(the average of X square)) =(10 * 10 + 25 * 26 + 70 * 72 - 3 * 35 * 36) / (10 * 10 + 25 * 25 + 70 * 70 - 3 * 35 * 35) =2010/1950 =1.03
其中,參數a=(Y的平均數)-(b*X的平均數) =36-1.03*35 =-0.05 Among them, the parameter a=(average of Y)-(average of b*X) =36-1.03*35 =-0.05
根據上述的分析運算可以得知,處理器140可依據多個第二校正值CC2(10°C、26°C以及72°C)以及多個標準環境溫度(10°C、25°C以及70°C)以透過最小二乘法分析的方式來獲得為Y=1.03X-0.05的目標函數ML。According to the above analysis and calculation, it can be known that the
進一步來說,在處理器140獲得目標函數ML之後,處理器140可依據多個標準環境溫度(10°C、25°C以及70°C)以及目標函數ML以計算出多個預測溫度值PT1~PTN。Further, after the
舉例而言,如表(3)所示,處理器140可使這些標準環境溫度(10°C、25°C以及70°C)分別輸入至目標函數ML中的參數X,以對應地獲得為10.25°C、25.7°C以及72.05°C的預測溫度值。並且,處理器可以依據這些預測溫度值(10.25°C、25.7°C以及72.05°C)以獲得第三溫度曲線TC3。For example, as shown in Table (3), the
接著,處理器140可以以標準溫度曲線STC上為25°C的標準環境溫度作為基準值,並將第三溫度曲線TC3上為25.7°C的預測溫度值與為25°C的標準環境溫度進行相減,以計算出第三溫度曲線TC3與標準溫度曲線STC之間的第二偏移值OFFSET2為0.7°C。Next, the
在處理器140計算出第二偏移值OFFSET2之後,處理器140可將第三溫度曲線TC3上的多個預測溫度值(10.25°C、25.7°C以及72.05°C)分別與為0.7°C的第二偏移值OFFSET2進行相減,以獲得如表(3)所示的多個第三校正值CC3(9.55°C、25°C以及71.35°C)。並且,處理器140可依據為9.55°C、25°C以及71.35°C的第三校正值CC3以產生第二校正曲線CV2。
換言之,如圖3B所示,本實施例的處理器140可以在完成第一的溫度校正動作之後(亦即,產生第一校正曲線CV1之後),進一步地依據第二校正值CC2、第三校正值CC3以及待測裝置120所產生的多個測試值,並透過目標函數ML以產生第二校正曲線CV2,藉以對溫度測試系統100進行第二次的溫度校正動作。In other words, as shown in FIG. 3B , after completing the first temperature correction action (that is, after generating the first correction curve CV1), the
如此一來,透過處理器140對溫度測試系統100進行兩次的溫度校正動作,能夠使得第二校正曲線CV2可以更加趨近於標準溫度曲線STC,藉以提升溫度測試系統100對待測裝置120進行溫度測試時的良率,並降低溫度測試時的良率損失。In this way, through the
圖4是依照本發明一實施例說明溫度測試方法的流程圖。請同時參照圖1以及圖4,在步驟S410中,溫度測試系統提供標準感測器感測多個標準環境溫度以分別產生多個參考值。在步驟S420中,溫度測試系統提供待測裝置感測多個操作溫度以產生多個測試值。在步驟S430中,溫度測試系統由處理器根據多個參考值的其中之一與對應的標準環境溫度的差以獲得第一偏移值,並根據第一偏移值以及多個參考值以產生第一校正曲線。FIG. 4 is a flowchart illustrating a temperature testing method according to an embodiment of the present invention. Please refer to FIG. 1 and FIG. 4 at the same time. In step S410 , the temperature testing system provides a standard sensor to sense a plurality of standard ambient temperatures to generate a plurality of reference values respectively. In step S420, the temperature testing system provides the device under test to sense a plurality of operating temperatures to generate a plurality of test values. In step S430, the processor of the temperature testing system obtains the first offset value according to the difference between one of the multiple reference values and the corresponding standard ambient temperature, and generates first calibration curve.
在步驟S440中,溫度測試系統由處理器根據第一偏移值來調整多個測試值以獲得多個第二校正值。在步驟S450中,溫度測試系統由處理器根據多個第二校正值以及多個標準環境溫度以計算出多個預測溫度值。在步驟S460中,溫度測試系統由處理器計算多個預測溫度值的其中之一與相對應的標準環境溫度的差以產生第二偏移值。在步驟S470中,溫度測試系統由處理器根據第二偏移值以調整多個預測溫度值,並根據調整後的多個預測溫度值以產生第二校正曲線。In step S440, the processor of the temperature testing system adjusts a plurality of test values according to the first offset value to obtain a plurality of second calibration values. In step S450, the processor of the temperature testing system calculates a plurality of predicted temperature values according to a plurality of second calibration values and a plurality of standard ambient temperatures. In step S460, the processor of the temperature testing system calculates the difference between one of the plurality of predicted temperature values and the corresponding standard ambient temperature to generate a second offset value. In step S470, the processor of the temperature testing system adjusts a plurality of predicted temperature values according to the second offset value, and generates a second calibration curve according to the adjusted plurality of predicted temperature values.
關於各步驟的實施細節在前述的實施例及實施方式都有詳盡的說明,在此恕不多贅述。The implementation details of each step have been described in detail in the aforementioned embodiments and implementation manners, and will not be repeated here.
綜上所述,在本發明諸實施例所述溫度測試系統及其溫度測試方法中,處理器可以在完成第一的溫度校正動作之後,進一步地依據第二校正值、第三校正值以及待測裝置所產生的多個測試值,並透過目標函數以產生第二校正曲線,藉以對溫度測試系統進行第二次的溫度校正動作。如此一來,處理器能夠使得第二校正曲線可以更加趨近於標準溫度曲線,藉以提升溫度測試系統對待測裝置進行溫度測試時的良率,並降低溫度測試時的良率損失。To sum up, in the temperature testing system and its temperature testing method described in the various embodiments of the present invention, the processor can further base on the second correction value, the third correction value and the waiting time after completing the first temperature correction action. The multiple test values generated by the measuring device are used to generate a second calibration curve through the objective function, so as to perform a second temperature calibration action on the temperature testing system. In this way, the processor can make the second calibration curve closer to the standard temperature curve, so as to improve the yield rate of the temperature test system and reduce the yield loss during the temperature test.
100:溫度測試系統 110:標準感測器 120:待測裝置 130:記憶體 140:處理器 CV1:第一校正曲線 CV2:第二校正曲線 RF1~RFN:參考值 STC:標準溫度曲線 S410~S470:步驟 TS1~TSN:測試值 TC1:第一溫度曲線 TC2:第二溫度曲線 TC3:第三溫度曲線 100:Temperature test system 110: Standard sensor 120: device under test 130: memory 140: Processor CV1: first calibration curve CV2: second calibration curve RF1~RFN: Reference value STC: standard temperature curve S410~S470: Steps TS1~TSN: Test value TC1: The first temperature curve TC2: second temperature curve TC3: The third temperature curve
圖1是依照本發明一實施例說明一種溫度測試系統的示意圖。 圖2A至圖2C是依照本發明圖1一實施例的多個溫度曲線的示意圖。 圖3A至圖3B是依照本發明圖1另一實施例的多個溫度曲線的示意圖。 圖4是依照本發明一實施例說明溫度測試方法的流程圖。 FIG. 1 is a schematic diagram illustrating a temperature testing system according to an embodiment of the present invention. 2A to 2C are schematic diagrams of multiple temperature curves according to an embodiment of the present invention shown in FIG. 1 . 3A to 3B are schematic diagrams of multiple temperature curves according to another embodiment of FIG. 1 of the present invention. FIG. 4 is a flowchart illustrating a temperature testing method according to an embodiment of the present invention.
100:溫度測試系統 100:Temperature test system
110:標準感測器 110: Standard sensor
120:待測裝置 120: device under test
130:記憶體 130: memory
140:處理器 140: Processor
CV1:第一校正曲線 CV1: first calibration curve
CV2:第二校正曲線 CV2: second calibration curve
RF1~RFN:參考值 RF1~RFN: Reference value
TS1~TSN:測試值 TS1~TSN: Test value
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US6115441A (en) * | 1991-07-09 | 2000-09-05 | Dallas Semiconductor Corporation | Temperature detector systems and methods |
TW200912265A (en) * | 2007-09-12 | 2009-03-16 | Unisense Technology Co Ltd | Adjustment method and adjustment system for temperature sensing component |
TW201237376A (en) * | 2010-12-30 | 2012-09-16 | Veeco Instr Inc | Methods and systems for in-situ pyrometer calibration |
US20200264055A1 (en) * | 2010-08-31 | 2020-08-20 | Canon U.S.A., Inc. | Thermal calibration |
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US6115441A (en) * | 1991-07-09 | 2000-09-05 | Dallas Semiconductor Corporation | Temperature detector systems and methods |
TW200912265A (en) * | 2007-09-12 | 2009-03-16 | Unisense Technology Co Ltd | Adjustment method and adjustment system for temperature sensing component |
US20200264055A1 (en) * | 2010-08-31 | 2020-08-20 | Canon U.S.A., Inc. | Thermal calibration |
TW201237376A (en) * | 2010-12-30 | 2012-09-16 | Veeco Instr Inc | Methods and systems for in-situ pyrometer calibration |
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