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TWI802051B - Photoelectric conversion substrate - Google Patents

Photoelectric conversion substrate Download PDF

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TWI802051B
TWI802051B TW110138888A TW110138888A TWI802051B TW I802051 B TWI802051 B TW I802051B TW 110138888 A TW110138888 A TW 110138888A TW 110138888 A TW110138888 A TW 110138888A TW I802051 B TWI802051 B TW I802051B
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photoelectric conversion
substrate
layer
main body
moisture
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TW202230755A (en
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本澤圭太
會田博之
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日商佳能電子管設備股份有限公司
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Abstract

提供產品可靠性高的光電轉換基板。 光電轉換基板具備包含主體部及突出部並具可撓性的基材、複數個光電轉換元件及複數個佈線。前述突出部從前述主體部的邊突出，被從前述主體部物理上連續而形成，並位於突出區域。前述複數個光電轉換元件設於前述主體部之上方，並位於檢測區域。前述複數個佈線位於前述主體部及前述突出部之上方，並電連接於前述複數個光電轉換元件。 Provide photoelectric conversion substrates with high product reliability. The photoelectric conversion substrate includes a flexible base material including a main body and a protrusion, a plurality of photoelectric conversion elements, and a plurality of wirings. The protruding portion protrudes from a side of the main body portion, is formed physically continuous from the main body portion, and is located in a protruding region. The plurality of photoelectric conversion elements are arranged above the main body and located in the detection area. The plurality of wires are located above the main body and the protruding portion, and are electrically connected to the plurality of photoelectric conversion elements.

Description

光電轉換基板Photoelectric conversion substrate

本發明的實施方式涉及光電轉換基板。 [關聯案] 本案以日本特願2021-106600(申請日：2021年6月28日)及日本特願2021-003635(申請日：2021年1月13日)為基礎而由該申請案主張優先的利益。本案透過參照該申請案從而包含該申請案的內容全部。 Embodiments of the present invention relate to a photoelectric conversion substrate. [Association case] This case is based on Japanese Patent Application No. 2021-106600 (filing date: June 28, 2021) and Japanese Patent Application No. 2021-003635 (filing date: January 13, 2021), and the priority interest is claimed by this application. This case includes the entire content of the application by referring to the application.

放射線檢測器方面，已知例如X射線檢測器(X射線平面檢測器)。X射線檢測器的X射線檢測模組具備X射線檢測面板與FPC(撓性印刷基板)。X射線檢測面板具備以玻璃基板為基材的光電轉換基板與形成於該光電轉換基板之上的閃爍器層。閃爍器層將X射線轉換為螢光。閃爍器層包含例如碘化銫(CsI)。光電轉換基板將螢光轉換為電訊號。 上述FPC透過熱壓接而連接於光電轉換基板。 As a radiation detector, for example, an X-ray detector (X-ray plane detector) is known. The X-ray detection module of the X-ray detector includes an X-ray detection panel and an FPC (flexible printed circuit board). The X-ray detection panel includes a photoelectric conversion substrate made of a glass substrate and a scintillator layer formed on the photoelectric conversion substrate. The scintillator layer converts X-rays into fluorescent light. The scintillator layer contains, for example, cesium iodide (CsI). The photoelectric conversion substrate converts fluorescent light into electrical signals. The above-mentioned FPC is connected to the photoelectric conversion substrate through thermocompression bonding.

本實施方式提供產品可靠性高的光電轉換基板。 涉及一實施方式的光電轉換基板具備包含主體部及突出部並具可撓性的基材、複數個光電轉換元件及複數個佈線， 前述主體部位於檢測區域及包圍前述檢測區域的非檢測區域，前述突出部位於從前述主體部的邊突出，被從前述主體部物理上連續而形成，並位於前述非檢測區域的外側的突出區域，前述複數個光電轉換元件設於前述主體部之上方，並位於前述檢測區域，前述複數個佈線位於前述主體部及前述突出部之上方，並電連接於前述複數個光電轉換元件。 This embodiment provides a photoelectric conversion substrate with high product reliability. A photoelectric conversion substrate according to an embodiment includes a flexible substrate including a main body and a protrusion, a plurality of photoelectric conversion elements, and a plurality of wirings, The main body portion is located in the detection area and a non-detection area surrounding the detection area, and the protruding portion is located in a protruding area that protrudes from the side of the main body portion, is formed physically continuous from the main body portion, and is located outside the non-detection area. , the plurality of photoelectric conversion elements are disposed above the main body and located in the detection area, and the plurality of wirings are located above the main body and the protrusion and are electrically connected to the plurality of photoelectric conversion elements.

在以下，就本發明的各實施方式，一面參照圖式一面進行說明。另外，揭示僅為一例，對本發明所屬技術領域中具有通常知識者而言，在可在保有發明的主旨下的適當變更方面可輕易思及者當然含有於本發明的範圍。此外，圖式方面，有時為了使說明更加明確而相對於實際的態樣示意性就各部分的寬度、厚度、形狀等進行表示，惟僅為一例，非限定本發明的解釋者。此外，本說明書與各圖中，對在既出的圖方面與前述者同樣的要素標注相同的符號，有時酌情省略詳細的說明。 首先，就本發明的實施方式的基本構想進行說明。 作為放射線檢測器的X射線檢測器具備X射線檢測面板。於X射線檢測面板，光電轉換基板的基材被以玻璃而形成。然而，近來，在光電轉換基板的基材方面嘗試應用具可撓性的可彎曲之基材的技術開發正在進展。基材的材料方面，為例如樹脂。樹脂製的基材比玻璃製的基材為輕量，並可彎曲，故具有抗衝撃及不易破裂如此之特徵。 關於往光電轉換基板的FPC(Flexible Printed Circuit)的壓接，光電轉換基板使用玻璃製的基材的情況下，上述壓接容易。理由在於，FPC具有柔軟的材質，光電轉換基板則使用剛性相對高的玻璃製的基材。另外，IC晶片被透過稱為COF(Chip On Film或Chip On Flexible)的安裝方法而安裝於FPC，安裝有IC晶片的FPC被壓接於光電轉換基板。 另一方面，光電轉換基板使用樹脂製的基材的情況下，存在上述壓接變困難如此之問題。理由在於，FPC及光電轉換基板的基材雙方皆具有柔軟的材質。於柔軟的光電轉換基板壓接柔軟的FPC，在光電轉換基板與FPC之間產生黏合力不足、不導電等的懸念。 於是，本發明的實施方式方面，為改善該問題者，並為可獲得產品可靠性高的光電轉換基板者。或者，為可獲得製造良率高的光電轉換基板者。接著，就用於改善上述問題的手段及手法進行說明。 (第1實施方式) 首先，就第1實施方式進行說明。圖1為就涉及第1實施方式的X射線檢測器1進行繪示的截面圖。X射線檢測器1為X射線影像檢測器，並為利用X射線檢測面板的X射線平面檢測器。 如示於圖1，X射線檢測器1具備X射線檢測模組10、支撐基板12、電路基板11、間隔物9a、9b、9c、9d、殼體51、入射窗52等。X射線檢測模組10具備X射線檢測面板PNL與防潮蓋7。X射線檢測面板PNL位於支撐基板12與防潮蓋7之間。防潮蓋7與入射窗52相向。 入射窗52安裝於殼體51的開口。入射窗52使X射線透過。為此，X射線透過入射窗52而入射於X射線檢測模組10。入射窗52形成為板狀，並具有保護殼體51內部的功能。入射窗52優選上以X射線吸收率低的材料形成為薄狀。本實施方式中，入射窗52被以碳纖維強化塑膠(CFRP：Carbon-Fiber-Reinforced Plastic)形成。據此，可減低在入射窗52發生的X射線的散射與X射線量的衰減。並且，可實現薄且輕的X射線檢測器1。 X射線檢測模組10、支撐基板12、電路基板11等被收容於以殼體51及入射窗52包圍的空間的內部。支撐基板12具有：第1主面SU1；第1主面SU1的相反側的第2主面SU2；及第1主面SU1與第2主面SU2之間之側面SU3。 X射線檢測模組10被將薄的構件層疊而構成，故為輕且機械強度低者。為此，X射線檢測面板PNL(X射線檢測模組10)固定於支撐基板12的第1主面SU1。支撐基板12被以例如鉛形成為板狀，且具有為了穩定保持X射線檢測面板PNL所需的強度(彈性率)。據此，可抑制從外部施加振動、衝撃於X射線檢測器1之際的X射線檢測面板PNL的破損。另外，支撐基板12可被以透濕性低且彈性率高的材料而形成，可被以鋁合金、不鏽鋼、玻璃、CFRP等的材料而形成。 電路基板11固定於支撐基板12。本實施方式中，電路基板11經由間隔物9a、9b固定於支撐基板12的第2主面SU2。例如，支撐基板12主要被以金屬而構成的情況下，可透過使用間隔物9a、9b從而保持支撐基板12至電路基板11為止的電絕緣距離。 於殼體51的內面，電路基板11被經由間隔物9c、9d固定。透過使用間隔物9c、9d，使得可保持主要以金屬而構成的殼體51至電路基板11為止的電絕緣距離。殼體51經由電路基板11及間隔物9a、9b、9c、9d支撐支撐基板12等。 X射線檢測面板PNL在周緣部具備佈線基板2e1。佈線基板2e1作用為FPC。於佈線基板2e1，設有控制電路3a。控制電路3a為例如IC晶片，並被安裝於佈線基板2e1。 X射線檢測面板PNL的佈線基板2e1連結於電路基板11。佈線基板2e1可彎曲180°，並通過與支撐基板12之側面SU3相向的空間。於電路基板11安裝有對應於佈線基板2e1的連接器，佈線基板2e1經由連接器電連接於電路基板11。如上述，電路基板11經由上述連接器而電連接於X射線檢測面板PNL。電路基板11為與控制電路3a等一起電驅動X射線檢測面板PNL且電處理來自X射線檢測面板PNL的輸出訊號者。 圖2為就本實施方式的X射線檢測器1的支撐基板12、X射線檢測面板PNL及電路基板11進行繪示的斜視圖，並為一併示出影像傳送部4的圖。另外，於圖2，未示出X射線檢測器1的全部的構件。後述的密封部等、X射線檢測器1的若干個構件的圖示在圖2中省略。 如示於圖2，X射線檢測面板PNL具備光電轉換基板2、閃爍器層5等。光電轉換基板2具有基材2a、複數個光電轉換部2b、複數個控制線(或閘極線)2c1、複數個資料線(或訊號線)2c2、複數個佈線基板2e1、2e2等。另外，光電轉換部2b、控制線2c1、資料線2c2及佈線基板2e1、2e2的數量、配置等不限定於圖2之例。 另外，佈線基板2e1為光電轉換基板2之中後述的突出部2ab、複數個佈線WL1、WL2等所位於之區域。 複數個控制線2c1延伸於列方向X，並被在行方向Y上隔既定之間隔而排列。複數個資料線2c2延伸於行方向Y，並與複數個控制線2c1交叉，且被在列方向X上隔既定之間隔而排列。 複數個光電轉換部2b設於基材2a的其中一主面(第1主面SU1)側。光電轉換部2b設於由控制線2c1與資料線2c2區劃的四角狀的區域。1個光電轉換部2b對應於X射線像的1個像素。複數個光電轉換部2b在列方向X及行方向Y上被矩陣狀地排列。綜上所述，光電轉換部2b為陣列基板。 各個光電轉換部2b具有光電轉換元件2b1及作為切換元件的TFT(薄膜電晶體)2b2。TFT2b2連接於對應的一個控制線2c1及對應的一個資料線2c2。光電轉換元件2b1電連接於TFT2b2。 控制線2c1經由佈線基板2e1等而電連接於電路基板11。電路基板11方面，與上述控制電路3a一起對複數個控制線2c1提供控制訊號S1。 X射線檢測面板PNL的佈線基板2e2如同佈線基板2e1般被連結於電路基板11。佈線基板2e2如同佈線基板2e1般可彎曲180°，並通過與支撐基板12之側面SU4相向的空間。 資料線2c2經由佈線基板2e2等而連接於電路基板11。由光電轉換元件2b1轉換的影像資料訊號S2(累積於光電轉換部2b的電荷)經由TFT2b2、資料線2c2、佈線基板2e2、後述的控制電路(3b)等傳送至電路基板11。 X射線檢測器1進一步具備影像傳送部4。影像傳送部4經由佈線4a而連接於電路基板11。另外，影像傳送部4亦可嵌入於電路基板11。影像傳送部4根據被透過未圖示的複數個類比－數位轉換器從而轉換為數位訊號的影像資料的訊號而生成X射線像。生成的X射線像的資料被從影像傳送部4朝外部的機器而輸出。 圖3為就涉及本實施方式的X射線檢測器1的X射線檢測模組10的檢測區域DA進行繪示的放大剖面圖。 如示於圖3，光電轉換基板2具有基材2a、複數個光電轉換部2b、絕緣層21、22、23、24、25。複數個光電轉換部2b位於檢測區域DA。各個光電轉換部2b具備光電轉換元件2b1與TFT2b2。 TFT2b2具有閘極電極GE、半導體層SC、源極電極SE及汲極電極DE。光電轉換元件2b1被以光電二極體而構成。另外，光電轉換元件2b1被構成為將光轉換為電荷即可。 基材2a具有板狀的形狀，並被以絕緣材料而形成。基材2a具有可撓性，並為可彎曲。基材2a的材料方面，可列舉例如屬樹脂之聚醯亞胺(PI)。 相對於基材2a為撓性基板(或撓性層)，支撐基板12為剛性基板。支撐基板12具有比基材2a的剛性高的剛性。本實施方式中，支撐基板12的彈性率比基材2a的彈性率高。 複數個光電轉換部2b(光電轉換元件2b1及TFT2b2)位於基材2a之上方。 絕緣層21設於基材2a之上。在絕緣層21之上，形成有閘極電極GE。閘極電極GE電連接於上述控制線2c1。絕緣層22設於絕緣層21及閘極電極GE之上。半導體層SC設於絕緣層22之上，並相向於閘極電極GE。半導體層SC被以作為非晶質半導體的非晶質矽、作為多晶半導體的多晶矽等的半導體材料而形成。 在絕緣層22及半導體層SC之上設有源極電極SE及汲極電極DE。閘極電極GE、源極電極SE、汲極電極DE、上述控制線2c1及上述資料線2c2被使用鋁、鉻等的低電阻金屬而形成。 源極電極SE電連接於半導體層SC的源極區域。此外，源極電極SE電連接於上述資料線2c2。汲極電極DE電連接於半導體層SC的汲極區域。 絕緣層23設於絕緣層22、半導體層SC、源極電極SE及汲極電極DE之上。光電轉換元件2b1電連接於汲極電極DE。絕緣層24設於絕緣層23及光電轉換元件2b1之上。偏壓線BL設於絕緣層24之上，並通過形成於絕緣層24的接觸孔且連接於光電轉換元件2b1。絕緣層25設於絕緣層24及偏壓線BL之上。 絕緣層21、22、23、24、25被以無機絕緣材料、有機絕緣材料等的絕緣材料而形成。無機絕緣材料方面，可列舉氧化物絕緣材料、氮化物絕緣材料及氮氧化物絕緣材料。有機絕緣材料方面可列舉樹脂。 閃爍器層5設於光電轉換基板2(複數個光電轉換部2b)之上。閃爍器層5與複數個光電轉換部2b相向。閃爍器層5位於至少檢測區域DA，並覆蓋複數個光電轉換部2b之上方。閃爍器層5被構成為將入射的X射線轉換為光(螢光)。 複數個光電轉換部2b位於檢測區域DA。為此，注目於光電轉換基板2的情況下，檢測區域DA為可檢測出光(可見光)的區域。 另外，光電轉換元件2b1將從閃爍器層5入射的光轉換為電荷。轉換的電荷累積於光電轉換元件2b1。TFT2b2可切換往光電轉換元件2b1的蓄電及從光電轉換元件2b1的放電。另外，光電轉換元件2b1的自容量不充分的情況下，光電轉換基板2亦可進一步具有電容器(condenser/ capacitor)，並將以光電轉換元件2b1轉換的電荷累積於電容器。 閃爍器層5被以鉈活化碘化銫(CsI：Tl)而形成。使用真空蒸鍍法在光電轉換基板2之上直接形成閃爍器層5時，獲得由複數個柱狀結晶的集合體所成的閃爍器層5。閃爍器層5的厚度為例如600μm。於閃爍器層5的最表面，閃爍器層5的柱狀結晶的粗度為8至12μm。 形成閃爍器層5的材料不限定於CsI：Tl。閃爍器層5亦可被以鉈活化碘化鈉(NaI：Tl)、鈉活化碘化銫(CsI：Na)、銪活化溴化銫(CsBr：Eu)、碘化鈉(NaI)等而形成。 另外，在使用真空蒸鍍法而形成閃爍器層5之際，使用具有開口的遮罩。此情況下，在相向於光電轉換基板2上的開口的區域形成閃爍器層5。此外，透過了蒸鍍之閃爍器材亦堆積於遮罩的表面。並且，閃爍器材亦堆積於遮罩的開口的附近，且結晶以朝開口的內部逐漸突出的方式成長。結晶從遮罩朝開口的內部突出時，在開口的附近，往光電轉換基板2的閃爍器材的蒸鍍受到抑制。為此，如示於圖2，閃爍器層5的周緣附近方面，厚度隨著朝外側而漸減。 或者，閃爍器層5亦可具有被排列為矩陣狀並以一對一而設於光電轉換部2b且分別具有四角柱狀的形狀的複數個閃爍器部。形成如此的閃爍器層5之際，將混合了硫氧化釓(Gd 2O 2S)螢光體粒子與黏合劑材的閃爍器材塗佈於光電轉換基板2上，並將閃爍器材燒成而予以硬化。之後，透過切割機進行切割等，在閃爍器材形成格子狀的溝部。上述的情況下，於複數個閃爍器部之間，封入空氣或防氧化用的氮(N 2)等的惰性氣體。或者，複數個閃爍器部之間的空間亦可設定為被比大氣壓減壓的空間。 本實施方式中，X射線檢測面板PNL進一步具備光反射層6。光反射層6設於閃爍器層5之上。換言之，光反射層6設於閃爍器層5的X射線的入射側。光反射層6位於至少檢測區域DA，並覆蓋閃爍器層5之上表面。光反射層6被為了提高光(螢光)的利用效率以謀求感度特性的提升而設置。亦即，光反射層6使在閃爍器層5產生的光之中朝往與設置光電轉換部2b之側相反側的光反射而朝往光電轉換部2b。其中，光反射層6方面，依X射線檢測模組10要求的感度特性等而設即可，未必需要。 例如，將混合了由氧化鈦(TiO 2)等所成的光散射粒子、樹脂、溶劑的塗佈材料塗佈於閃爍器層5上，接著使塗佈材料乾燥，從而可形成光反射層6。 另外，光反射層6的構造及光反射層6的製造方法不限定於上述之例，可進行各種變形。例如，亦可將由銀合金、鋁等的光反射率高的金屬所成的層形成於閃爍器層5上從而形成光反射層6。或者，亦可將表面包含銀合金、鋁等的光反射率高的金屬層的薄片、包含光散射粒子的樹脂片等配置於閃爍器層5之上從而形成光反射層6。 另外，將膏狀的塗佈材料塗佈於閃爍器層5之上並使上述塗佈材料乾燥的情況下，塗佈材料伴隨乾燥而收縮，故拉伸應力施加於閃爍器層5，有時閃爍器層5從光電轉換基板2剝離。為此，優選上將薄片狀的光反射層6設於閃爍器層5之上。此情況下，雖亦可例如使用雙面帶等將光反射層6接合於閃爍器層5之上，惟優選上將光反射層6載置於閃爍器層5之上。將薄片狀的光反射層6載置於閃爍器層5之上時，可易於抑制因光反射層6的膨脹或收縮而發生的閃爍器層5從光電轉換基板2的剝離。 防潮蓋(防潮部)7設於光電轉換基板2、閃爍器層5及光反射層6之上。防潮蓋7覆蓋閃爍器層5及光反射層6。防潮蓋7被為了抑制因含於空氣中的水分使得光反射層6的特性、閃爍器層5的特性發生劣化的情形而設。防潮蓋7完全覆蓋閃爍器層5的曝露部分。防潮蓋7雖與光反射層6接觸，惟亦可在與光反射層6之間留有間隙。 防潮蓋7被以包含金屬的薄片而形成。上述金屬方面，可列舉含鋁的金屬、含銅的金屬、含鎂的金屬、含鎢的金屬、不鏽鋼、科伐等。防潮蓋7含金屬的情況下，防潮蓋7可防止或大幅抑制水分的透過。 此外，防潮蓋7亦可被以層疊了樹脂層與金屬層的層疊片而形成。此情況下，樹脂層能以聚醯亞胺樹脂、環氧樹脂、聚對苯二甲酸乙二酯樹脂、聚四氟乙烯(註冊商標)、低密度聚乙烯、高密度聚乙烯、彈性橡膠等的材料而形成。金屬層例如可作成為包含前述的金屬者。金屬層可使用濺鍍法、層疊法等而形成。 此情況下，優選上將金屬層設於比樹脂層靠閃爍器層5側。可透過樹脂層覆蓋金屬層，故可抑制金屬層可能因外力等而承受的損傷。此外，金屬層設於比樹脂層靠閃爍器層5側時，可抑制經由了樹脂層之透濕致使的閃爍器層5的特性的劣化。 防潮蓋7方面，可列舉含金屬層的薄片、含無機絕緣層的薄片、層疊了樹脂層與金屬層的層疊片及層疊了樹脂層與無機絕緣層的層疊片。綜上所述，防潮蓋7的無機層亦可為無機絕緣層，不限於金屬層。或者，防潮蓋7亦可具有金屬層及無機絕緣層雙方。無機絕緣層能以包含氧化矽、氧化鋁等之層而形成。無機絕緣層可使用濺鍍法等而形成。 此外，防潮蓋7的厚度可考量X射線的吸收、剛性(彈性率)等而決定。此情況下，防潮蓋7的厚度越大，被防潮蓋7吸收的X射線的量越多。另一方面，防潮蓋7的厚度越小，防潮蓋7的剛性越低，容易破損。 例如，使防潮蓋7的厚度不足10μm時，防潮蓋7的剛性變過低，外力等導致的損傷致使防潮蓋7產生針孔，存在發生洩漏之虞。防潮蓋7的厚度超過50μm時，防潮蓋7的剛性變過高，對於閃爍器層5之上端的凹凸的追隨性變差。為此，存在前述的間隙、洩漏路徑的確認變困難之虞。再者，存在難以追隨於光電轉換基板2的變形之虞。 為此，防潮蓋7的厚度優選上為10μm以上、50μm以下。此情況下，防潮蓋7例如能以厚度為10至50μm的鋁箔而形成。鋁箔的厚度為10至50μm時，比起厚度為100μm的鋁箔，可增加X射線的透射量20至30%程度。此外，採用厚度為10至50μm的鋁箔時，可抑制前述的洩漏的發生，且前述的間隙、洩漏路徑的確認變容易。此外，防潮蓋7可追隨於光電轉換基板2的翹曲等的變形。 為了縮小金屬的熱脹及熱縮，鋁等的金屬的厚度優選上為30μm以下。此時，防潮蓋7優選上包含10至30μm的鋁箔。 涉及本實施方式的防潮蓋7為包含具有10至30μm的厚度的鋁箔與樹脂層的鋁層疊膜。例如，以鋁層疊膜而形成防潮蓋7的情況下，防潮蓋7具有可撓性而可應對於彎曲。該情況下，防潮蓋7的剛性比支撐基板12的剛性低。具可撓性的防潮蓋7可與基材2a一起有助於形成撓性的X射線檢測模組10。 此處，對於人體進行大量的X射線照射時存在對於健康的不良影響，故往人體的X射線照射量抑制為所需最低限度。為此，用於醫療的X射線檢測器1的情況下，被照射的X射線的強度變低，存在透過防潮蓋7的X射線的強度變非常低之虞。防潮蓋7的鋁箔的厚度為10至30μm，故照射的X射線的強度低的情況下仍可進行X射線像的攝影。 圖4為就X射線檢測器1的一部分進行繪示的平面圖，並為將光電轉換基板2的突出區域PA展開而示出的圖。圖4中，對閃爍器層5標注向右上的斜線，對密封部8標注向右下的斜線。圖5為就示於圖4的X射線檢測器的一部分沿著線V-V進行繪示的截面圖。圖4及圖5中，在光電轉換基板2方面就延伸於X-Y平面的狀態進行說明。 如示於圖4及圖5，光電轉換基板2的基材2a包含主體部2aa、複數個突出部2ab及複數個突出部2ac，並具可撓性。主體部2aa位於檢測區域DA及包圍檢測區域DA的非檢測區域NDA。檢測區域DA為例如四角形的區域，非檢測區域NDA為例如四角框狀的形狀的區域。主體部2aa的平面形狀(位於檢測區域DA及非檢測區域NDA的光電轉換基板2的平面形狀)為例如四角形。 光電轉換基板2之中至少檢測區域DA及非檢測區域NDA固定於支撐基板12的第1主面SU1。此外，基材2a之中至少主體部2aa固定於支撐基板12的第1主面SU1。 各個突出部2ab從主體部2aa的邊SI1突出，被從主體部2aa物理上連續而形成，並位於非檢測區域NDA的外側的突出區域PAb。各個突出部2ac從主體部2aa的邊SI2突出，被從主體部2aa物理上連續而形成，並位於非檢測區域NDA的外側的突出區域PAc。 另外，光電轉換基板2的突出區域PAb相當於X射線檢測面板PNL的佈線基板2e1，光電轉換基板2的突出區域PAc相當於X射線檢測面板PNL的佈線基板2e2。此外，本實施方式中，各個的突出區域PAb、PAc為四角形的區域，並為例如長條形的區域。 閃爍器層5位於至少檢測區域DA的整體。光反射層6位於至少檢測區域DA。本實施方式中，光反射層6完全未覆蓋閃爍器層5之側面5a。其中，光反射層6亦可覆蓋閃爍器層5之側面5a的一部分，或覆蓋閃爍器層5之側面5a的整體。 X射線檢測器1進一步具備密封部8。密封部8設於閃爍器層5的周圍。密封部8具有框狀的形狀，並連續地延伸於閃爍器層5的周圍。本實施方式中，密封部8位於非檢測區域NDA。密封部8將光電轉換基板2(例如，上述絕緣層25)與防潮蓋7進行接合。 防潮蓋7在示於圖4的平面圖中位於檢測區域DA及非檢測區域NDA。防潮蓋7與光電轉換基板2一起將閃爍器層5及光反射層6密封。本實施方式中，防潮蓋7與光電轉換基板2及密封部8一起將閃爍器層5及光反射層6密封。如示於圖5，閃爍器層5之中未被以光電轉換基板2及密封部8覆蓋的部分被以防潮蓋7完全覆蓋。 防潮蓋7接合於密封部8的外表面8a。防潮蓋7覆蓋密封部8的至少一部分。例如，在被比大氣壓進行減壓的環境中將防潮蓋7與密封部8接合時，可使防潮蓋7接觸於光反射層6等。 此外，一般而言，於閃爍器層5，存在其體積的10至40%程度的空隙。為此，空隙中含有氣體時，在將X射線檢測器1以航空器等輸送的情況下存在氣體膨脹使得防潮蓋7破損之虞。在被比大氣壓進行減壓的環境中將防潮蓋7與密封部8接合時，即使在X射線檢測器1被以航空器等進行輸送的情況下及在高地使用X射線檢測器1的情況下，仍可抑制防潮蓋7的破損。綜上所述，由密封部8與防潮蓋7區劃的空間的壓力優選上比大氣壓低。 密封部8被以包含熱塑性樹脂的材料而形成。密封部8被以包含熱塑性樹脂作為主成分的材料而形成。密封部8可被以100%熱塑性樹脂而形成。或者，密封部8亦可被以在熱塑性樹脂摻雜了添加物的材料而形成。密封部8包含熱塑性樹脂作為主成分時，密封部8可透過加熱將光電轉換基板2及防潮蓋7接合。 熱塑性樹脂可利用尼龍、PET( Polyethyleneterephthalate)、聚胺甲酸酯、聚酯、聚氯乙烯、ABS(Acrylonitrile Butadiene Styrene)、丙烯酸、聚苯乙烯、聚乙烯、聚丙烯等。 控制電路3a位於突出區域PAb，控制電路3b位於突出區域PAc。控制電路3a安裝於光電轉換基板2的突出區域PAb(佈線基板2e1)，控制電路3b安裝於光電轉換基板2的突出區域PAc(佈線基板2e2)。代表控制電路3a及控制電路3b而注目於控制電路3a時，本實施方式中，控制電路3a安裝於佈線基板2e1的下表面(佈線基板2e1的支撐基板12側的面)。其中，控制電路3a亦可安裝於佈線基板2e1之上表面(佈線基板2e1的閃爍器層5側的面)。 圖6為就X射線檢測模組10的檢測區域DA、非檢測區域NDA及突出區域PAb進行繪示的放大剖面圖，並為將突出區域PAb展開而示出的圖。 如示於圖6，複數個光電轉換元件2b1設於主體部2aa之上方。光電轉換基板2被遍及檢測區域DA、非檢測區域NDA及突出區域PAb物理上連續而形成。於光電轉換基板2，不僅基材2a，在絕緣層21至25方面亦被遍及檢測區域DA、非檢測區域NDA及突出區域PAb物理上連續而形成。另外，亦可未於光電轉換基板2的突出區域PAb形成絕緣層21至25的全部。 圖7為就X射線檢測面板PNL的非檢測區域NDA及突出區域PAb進行繪示的放大平面圖，並為將突出區域PAb展開而示出的圖，且為一併示出控制電路3a及連接器CN的圖。 如示於圖7，X射線檢測器1具備連接器CN。連接器CN安裝於佈線基板2e1。光電轉換基板2除示於圖2的複數個控制線2c1及複數個資料線2c2以外亦具備複數個佈線WL1、複數個佈線WL2等複數個佈線。 佈線WL1位於基材2a的主體部2aa及突出部2ab之上方，並被遍及非檢測區域NDA及突出區域PAb物理上連續而形成。佈線WL2位於突出部2ab之上方。佈線WL1及佈線WL2可位於示於圖3的絕緣層21與絕緣層22之間，或絕緣層22與絕緣層23之間。 各個佈線WL1一方面電連接於上述控制線2c1，另一方面電連接於控制電路3a。佈線WL1亦可被與控制線2c1物理上連續而形成。各個佈線WL2一方面電連接於控制電路3a，另一方面電連接於連接器CN。例如，佈線WL1、佈線WL2及控制線2c1亦可被以相同材料同時形成。 另外，使用圖7就控制電路3a、連接器CN、佈線基板2e1等進行了說明的構成方面，亦可應用於佈線基板2e2、控制電路3b、安裝於佈線基板2e2的連接器等的構成。 如示於圖7及圖2，複數個佈線WL1及複數個佈線WL2經由複數個TFT2b2等，並電連接於複數個光電轉換元件2b1。控制電路3a為驅動電路，與電路基板11一起對控制線2c1提供控制訊號S1，驅動控制線2c1及TFT2b2，並控制從光電轉換部2b取出影像資料訊號S2的時序。 另一方面，示於圖4的控制電路3b為讀取影像資料訊號S2的電路，並與電路基板11一起從資料線2c2讀取影像資料訊號S2。 X射線檢測器1被如上述般構成。 依涉及被如上述般構成的第1實施方式的X射線檢測器1時，光電轉換基板2具有：包含主體部2aa及突出部2ab、2ac並具可撓性的基材2a；複數個光電轉換元件2b1；及複數個佈線WL1。突出部2ab從主體部2aa的邊SI1突出，被從主體部2aa物理上連續而形成，並位於突出區域PAb。 光電轉換基板2之中複數個佈線基板2e1、2e2作用為FPC。為此，可除去用於使用熱壓接法將FPC連接於光電轉換基板2(X射線檢測面板PNL)的製程本身。為此，可獲得可縮短製造時間的X射線檢測器1。 亦不會在光電轉換基板2與FPC之間產生黏合力不足、不導電等的懸念。為此，產品可靠性高的光電轉換基板2。此外，可獲得製造良率高的光電轉換基板2。 如上述般製造時間被縮短，再者X射線檢測器1不另外需要FPC以將光電轉換基板2與電路基板11連接。為此，可獲得可抑制製造成本的X射線檢測器1。 基材2a具可撓性，故X射線檢測面板PNL為撓性面板。X射線檢測面板PNL為撓性面板的情況下，將X射線檢測面板PNL固定於殼體51內部為困難。於是，X射線檢測面板PNL被由為剛性基板的支撐基板12支撐。據此，可易於將X射線檢測面板PNL與支撐基板12一起固定於殼體51內部。 於主體部2aa的邊SI1側，複數個佈線基板2e1被在行方向Y上隔間隔而設。於主體部2aa的邊SI2側，複數個佈線基板2e2被在列方向X上隔間隔而設。佈線基板2e具可撓性，故從X射線檢測器1的製造時的作業性的觀點而言，如本實施方式般，佈線基板2e優選上被隔間隔而分為複數個。據此，比起複數個佈線基板2e1無間隔地物理上連結的情況、複數個佈線基板2e2無間隔地物理上連結的情況可謀求作業性的提升。 另外，佈線基板2e1的個數及佈線基板2e2的個數分別為2以上即可。 (變形例1) 接著，就上述第1實施方式的變形例1進行說明。圖8為就涉及本變形例1的X射線檢測器1的一部分進行繪示的平面圖，並為將光電轉換基板2的突出區域PA展開而示出的圖。X射線檢測器1除在本變形例1進行說明的構成以外，被與上述第1實施方式同樣地構成。 如示於圖8，基材2a的複數個突出部亦可從主體部2aa的4個邊SI突出。 突出部2ab從主體部2aa的邊SI3突出，被從主體部2aa物理上連續而形成，並位於非檢測區域NDA的外側的突出區域PAb。X射線檢測面板PNL(光電轉換基板2)在列方向X上的主體部2aa的兩側分別具有包含突出部2ab的複數個佈線基板2e1。控制電路3a被安裝於各個佈線基板2e1。 突出部2ac從主體部2aa的邊SI4突出，被從主體部2aa物理上連續而形成，並位於非檢測區域NDA的外側的突出區域PAc。X射線檢測面板PNL(光電轉換基板2)在行方向Y上的主體部2aa的兩側分別具有包含突出部2ac的複數個佈線基板2e2。控制電路3b被安裝於各個佈線基板2e2。 於本變形例1，亦可獲得與上述第1實施方式同樣的功效。 另外，邊SI1側的佈線基板2e1的個數、邊SI2側的佈線基板2e2的個數、邊SI3側的佈線基板2e1的個數及邊SI4側的佈線基板2e2的個數分別為2以上即可。 (變形例2) 接著，就上述第1實施方式的變形例2進行說明。圖9為就涉及本變形例2的X射線檢測器1的一部分進行繪示的平面圖，並為將光電轉換基板2的突出區域PA展開而示出的圖。X射線檢測器1除在本變形例2進行說明的構成以外，被與上述第1實施方式同樣地構成。 如示於圖9，X射線檢測器1亦可被無複數個佈線基板2e1及複數個控制電路3a而構成。於佈線基板2e2進一步電連接控制線2c1。控制電路3b進一步亦作用為驅動控制線2c1的驅動電路。 如上述，複數個突出部亦可為僅從主體部2aa的一邊(邊SI2)突出。於本變形例2，亦可獲得與上述第1實施方式同樣的功效。 另外，佈線基板2e2的個數為2以上即可。 (變形例3) 接著，就上述第1實施方式的變形例3進行說明。圖10為就涉及本變形例3的X射線檢測器1的一部分進行繪示的平面圖。X射線檢測器1除在本變形例3進行說明的構成以外，被與上述第1實施方式同樣地構成。 如示於圖10般，於主體部2aa的邊SI1側，光電轉換基板2具有單個佈線基板2e1。於佈線基板2e1安裝3個控制電路3a。其中，控制電路3a的個數不限於3個，可進行各種變形。 於主體部2aa的邊SI2側，光電轉換基板2具有單個佈線基板2e2。於佈線基板2e2安裝3個控制電路3b。其中，控制電路3b的個數不限於3個，可進行各種變形。 大致上，本變形例3的佈線基板2e1的構成相當於將示於圖4的複數個佈線基板2e1無間隔地物理上連結的構成。此外，本變形例3的佈線基板2e2的構成相當於將示於圖4的複數個佈線基板2e2無間隔地物理上連結的構成。 於本變形例3，X射線檢測器1亦不需要用於將光電轉換基板2與電路基板11進行連接的FPC，故可獲得與上述第1實施方式同樣的功效。 (第2實施方式) 接著，就第2實施方式進行說明。圖11為就涉及第2實施方式的X射線檢測器的一部分進行繪示的截面圖，並為將光電轉換基板的突出區域展開而示出的圖。X射線檢測器1除在本實施方式進行說明的構成以外，被與上述第1實施方式同樣地構成。 如示於圖11，閃爍器層5可不直接形成於光電轉換基板2之上。X射線檢測器1具備支撐基板12、光電轉換基板2、控制電路3a、閃爍器面板SP等。閃爍器面板SP具備基板15、光反射層16、閃爍器層5及防潮體17。 基板15位於檢測區域DA及非檢測區域NDA，並被以CFRP而形成。CFRP為具有高X射線透射率的材料。 閃爍器層5位於基板15與光電轉換基板2之間。閃爍器層5設置間隙而相向於基板15。閃爍器層5位於至少檢測區域DA。本實施方式中，閃爍器層5位於檢測區域DA及非檢測區域NDA。 光反射層16設於基板15與閃爍器層5之間。光反射層16位於檢測區域DA及非檢測區域NDA。光反射層16被為了提高螢光的利用效率以改善感度特性而設。亦即，光反射層16具有將被以閃爍器層5轉換的螢光進行反射的功能。光反射層16將朝往與光電轉換基板2側相反側的光進行反射，故可提升光朝往光電轉換部2b之量。 防潮體17包住基板15、光反射層16及閃爍器層5。防潮體17與光反射層16一起將閃爍器層5氣密地閉塞。防潮體17被使用例如化學氣相沉積(CVD：Chemical Vapor Deposition)法以聚對二甲苯(poly-para-xylylene)樹脂等的有機材料而形成。可將以聚對二甲苯樹脂形成的防潮體17稱為有機膜。 X射線檢測器1進一步具備黏合層AL。黏合層AL位於光電轉換基板2與閃爍器面板SP之間。詳言之，黏合層AL將光電轉換基板2的絕緣層25與閃爍器面板SP的防潮體17分別黏合。光電轉換基板2及閃爍器面板SP被透過黏合層AL而黏合。 於本第2實施方式，光電轉換基板2亦被與上述第1實施方式的光電轉換基板2同樣地構成。為此，於本第2實施方式，亦可獲得與上述第1實施方式同樣的功效。 (比較例) 接著，就上述第1實施方式的比較例進行說明。圖12為就涉及本比較例的X射線檢測器1的X射線檢測模組10的非檢測區域NDA與其周邊的區域進行繪示的放大剖面圖。X射線檢測器1除在本比較例進行說明的構成以外，被與上述第1實施方式同樣地構成。 如示於圖12，X射線檢測面板PNL(光電轉換基板2)被無佈線基板2e地形成。例如，基材2a被無突出部2ab、2ac地形成。 光電轉換基板2進一步具有墊2d。墊2d位於非檢測區域NDA。墊2d形成於絕緣層23之上，且被以絕緣層24、25覆蓋。墊2d電連接於例如控制線2c1。 X射線檢測器1進一步具備FPC20。FPC20被使用熱壓接法透過連接材AD固定於光電轉換基板2(X射線檢測面板PNL)，並電連接於墊2d。 依涉及如上述般構成的比較例的X射線檢測器1時，在光電轉換基板2與FPC20之間產生黏合力不足、不導電等的懸念。為此，使用FPC20並非理想。 雖說明本發明的若干個實施方式，惟此等實施方式為舉例而提示者，並未意欲限定發明的範圍。此等新穎的實施方式能以其他各種的方式而實施，在不脫離發明的要旨的範圍內可進行各種的省略、置換、變更。此等實施方式、其變形含於發明的範圍、要旨內，同時含於記載於申請專利範圍的發明與其均等的範圍內。亦可依所需而組合複數個實施方式及複數個變形例。 上述的技術不限於應用於上述光電轉換基板2，可應用於其他光電轉換基板。此外，上述的技術不限於應用於上述X射線檢測器1，可應用於其他X射線檢測器、各種的放射線檢測器。放射線檢測器代替X射線檢測面板PNL而具備檢測放射線的放射線檢測面板即可。 Hereinafter, each embodiment of the present invention will be described with reference to the drawings. In addition, the disclosure is only an example, and those who have ordinary knowledge in the technical field to which the present invention pertains can easily conceive of appropriate modifications while maintaining the gist of the invention, and are naturally included in the scope of the present invention. In addition, in the drawings, the width, thickness, shape, etc. of each part are sometimes schematically shown relative to the actual aspect for clarity of description, but these are just examples and do not limit the interpreters of the present invention. In addition, in this specification and each drawing, the same code|symbol is attached|subjected to the same element as the above-mentioned one in the drawing which is already shown, and detailed description may be omitted as appropriate. First, the basic idea of the embodiment of the present invention will be described. An X-ray detector as a radiation detector includes an X-ray detection panel. In the X-ray detection panel, the base material of the photoelectric conversion substrate is formed of glass. Recently, however, technological developments in an attempt to apply flexible and bendable substrates to the substrates of photoelectric conversion substrates are progressing. The material of the base material is, for example, resin. The base material made of resin is lighter than the base material made of glass, and can be bent, so it has the characteristics of shock resistance and not easy to break. Regarding the pressure-bonding to the FPC (Flexible Printed Circuit) of the photoelectric conversion substrate, when the photoelectric conversion substrate uses a base material made of glass, the above-mentioned pressure-bonding is easy. The reason is that the FPC has a soft material, and the photoelectric conversion substrate uses a relatively rigid glass substrate. In addition, the IC chip is mounted on the FPC by a mounting method called COF (Chip On Film or Chip On Flexible), and the FPC mounted with the IC chip is pressure-bonded to the photoelectric conversion substrate. On the other hand, when a resin-made base material is used for a photoelectric conversion substrate, there is a problem that the above-mentioned pressure bonding becomes difficult. The reason is that both the substrates of the FPC and the photoelectric conversion substrate have soft materials. The flexible FPC is crimped on the flexible photoelectric conversion substrate, and there are suspenses such as insufficient adhesion and non-conduction between the photoelectric conversion substrate and the FPC. Therefore, an aspect of the embodiment of the present invention is to improve this problem and to obtain a photoelectric conversion substrate with high product reliability. Alternatively, a photoelectric conversion substrate with a high production yield can be obtained. Next, means and methods for improving the above-mentioned problems will be described. (First Embodiment) First, a first embodiment will be described. FIG. 1 is a cross-sectional view illustrating an X-ray detector 1 according to a first embodiment. The X-ray detector 1 is an X-ray image detector, and is an X-ray plane detector using an X-ray detection panel. As shown in FIG. 1 , X-ray detector 1 includes X-ray detection module 10 , support substrate 12 , circuit board 11 , spacers 9 a , 9 b , 9 c , 9 d , case 51 , entrance window 52 , and the like. The X-ray detection module 10 includes an X-ray detection panel PNL and a moisture-proof cover 7 . The X-ray detection panel PNL is located between the support substrate 12 and the moisture-proof cover 7 . The moisture-proof cover 7 faces the incident window 52 . The incident window 52 is mounted on the opening of the casing 51 . The entrance window 52 transmits X-rays. Therefore, X-rays are incident on the X-ray detection module 10 through the incident window 52 . The incident window 52 is formed in a plate shape and has a function of protecting the inside of the housing 51 . The entrance window 52 is preferably thinly formed of a material with a low X-ray absorption rate. In the present embodiment, the incident window 52 is formed of carbon fiber reinforced plastic (CFRP: Carbon-Fiber-Reinforced Plastic). Thereby, the scattering of X-rays and the attenuation of the X-ray amount which generate|occur|produce in the entrance window 52 can be reduced. Also, a thin and light X-ray detector 1 can be realized. The X-ray detection module 10 , the support substrate 12 , the circuit substrate 11 , and the like are accommodated in a space surrounded by the casing 51 and the incident window 52 . The supporting substrate 12 has: the first main surface SU1; the second main surface SU2 on the opposite side to the first main surface SU1; and the side surface SU3 between the first main surface SU1 and the second main surface SU2. The X-ray detection module 10 is formed by laminating thin members, so it is light and has low mechanical strength. Therefore, the X-ray detection panel PNL (X-ray detection module 10 ) is fixed to the first main surface SU1 of the support substrate 12 . The support substrate 12 is formed in a plate shape of, for example, lead, and has strength (elasticity) necessary for stably holding the X-ray detection panel PNL. Accordingly, damage to the X-ray detection panel PNL when vibration is applied from the outside and impacts on the X-ray detector 1 can be suppressed. In addition, the support substrate 12 may be formed of a material with low moisture permeability and high elastic modulus, and may be formed of a material such as aluminum alloy, stainless steel, glass, CFRP, or the like. The circuit board 11 is fixed to the supporting board 12 . In this embodiment, the circuit board 11 is fixed to the 2nd main surface SU2 of the support board 12 via the spacer 9a, 9b. For example, when the support substrate 12 is mainly made of metal, the electrical insulation distance from the support substrate 12 to the circuit substrate 11 can be maintained by using the spacers 9 a and 9 b. On the inner surface of the housing 51, the circuit board 11 is fixed via the spacers 9c and 9d. By using the spacers 9c and 9d, the electrical insulation distance from the case 51 mainly made of metal to the circuit board 11 can be maintained. The housing 51 supports the support substrate 12 and the like via the circuit substrate 11 and the spacers 9 a, 9 b, 9 c, and 9 d. The X-ray detection panel PNL includes a wiring board 2e1 at its peripheral edge. The wiring substrate 2e1 functions as an FPC. On the wiring board 2e1, the control circuit 3a is provided. The control circuit 3a is, for example, an IC chip, and is mounted on the wiring board 2e1. The wiring board 2e1 of the X-ray detection panel PNL is connected to the circuit board 11 . The wiring substrate 2e1 can be bent by 180°, and passes through the space facing the side surface SU3 of the support substrate 12 . A connector corresponding to the wiring board 2e1 is mounted on the circuit board 11, and the wiring board 2e1 is electrically connected to the circuit board 11 via the connector. As mentioned above, the circuit board 11 is electrically connected to the X-ray detection panel PNL via the said connector. The circuit board 11 electrically drives the X-ray detection panel PNL together with the control circuit 3 a and the like and electrically processes an output signal from the X-ray detection panel PNL. 2 is a perspective view illustrating the support substrate 12 , the X-ray detection panel PNL, and the circuit board 11 of the X-ray detector 1 according to the present embodiment, and also shows the image transmission unit 4 . In addition, in FIG. 2, all the components of the X-ray detector 1 are not shown. The illustration of several members of the X-ray detector 1 such as a sealing portion and the like described later is omitted in FIG. 2 . As shown in FIG. 2 , the X-ray detection panel PNL includes a photoelectric conversion substrate 2 , a scintillator layer 5 , and the like. The photoelectric conversion substrate 2 has a base material 2a, a plurality of photoelectric conversion parts 2b, a plurality of control lines (or gate lines) 2c1, a plurality of data lines (or signal lines) 2c2, a plurality of wiring substrates 2e1, 2e2, and the like. In addition, the number, arrangement, etc. of the photoelectric conversion part 2b, the control line 2c1, the data line 2c2, and the wiring boards 2e1 and 2e2 are not limited to the example shown in FIG. 2 . In addition, the wiring substrate 2e1 is a region in which a protruding portion 2ab described later, a plurality of wirings WL1, WL2, and the like are located in the photoelectric conversion substrate 2. As shown in FIG. The plurality of control lines 2c1 extend in the column direction X and are arranged in the row direction Y at predetermined intervals. The plurality of data lines 2c2 extend in the row direction Y, cross the plurality of control lines 2c1, and are arranged at predetermined intervals in the column direction X. The plurality of photoelectric conversion parts 2b are provided on one of the main surfaces (the first main surface SU1 ) side of the substrate 2a. The photoelectric conversion unit 2b is provided in a quadrangular region defined by the control line 2c1 and the data line 2c2. One photoelectric conversion unit 2b corresponds to one pixel of the X-ray image. The plurality of photoelectric conversion units 2 b are arranged in a matrix in the column direction X and the row direction Y. To sum up, the photoelectric conversion part 2b is an array substrate. Each photoelectric conversion unit 2b has a photoelectric conversion element 2b1 and a TFT (Thin Film Transistor) 2b2 as a switching element. The TFT 2b2 is connected to a corresponding control line 2c1 and a corresponding data line 2c2. The photoelectric conversion element 2b1 is electrically connected to the TFT 2b2. The control line 2c1 is electrically connected to the circuit board 11 via the wiring board 2e1 and the like. The circuit board 11 supplies a control signal S1 to a plurality of control lines 2c1 together with the above-mentioned control circuit 3a. Wiring board 2e2 of X-ray detection panel PNL is connected to circuit board 11 like wiring board 2e1. The wiring substrate 2e2 is bendable by 180° like the wiring substrate 2e1, and passes through the space facing the side surface SU4 of the supporting substrate 12. The data line 2c2 is connected to the circuit board 11 via the wiring board 2e2 and the like. The image data signal S2 converted by the photoelectric conversion element 2b1 (charge accumulated in the photoelectric conversion part 2b) is transmitted to the circuit board 11 through the TFT 2b2, the data line 2c2, the wiring board 2e2, the control circuit (3b) described later, and the like. The X-ray detector 1 further includes an image transmission unit 4 . The video transmission unit 4 is connected to the circuit board 11 via the wiring 4a. In addition, the image transmission unit 4 can also be embedded in the circuit substrate 11 . The image transmission unit 4 generates an X-ray image based on a signal of image data converted into a digital signal by passing through a plurality of analog-to-digital converters not shown. The data of the generated X-ray image is output from the video transmission unit 4 to an external device. FIG. 3 is an enlarged cross-sectional view illustrating the detection area DA of the X-ray detection module 10 of the X-ray detector 1 according to the present embodiment. As shown in FIG. 3 , the photoelectric conversion substrate 2 has a base material 2 a , a plurality of photoelectric conversion parts 2 b , and insulating layers 21 , 22 , 23 , 24 , and 25 . The plurality of photoelectric conversion units 2b are located in the detection area DA. Each photoelectric conversion unit 2b includes a photoelectric conversion element 2b1 and a TFT 2b2. TFT2b2 has a gate electrode GE, a semiconductor layer SC, a source electrode SE, and a drain electrode DE. The photoelectric conversion element 2b1 is constituted by a photodiode. In addition, the photoelectric conversion element 2b1 may be configured to convert light into electric charges. The base material 2a has a plate shape and is formed of an insulating material. The base material 2a has flexibility and is bendable. As for the material of the substrate 2a, polyimide (PI), which is a resin, can be cited, for example. While the base material 2a is a flexible substrate (or flexible layer), the supporting substrate 12 is a rigid substrate. The support substrate 12 has higher rigidity than the base material 2a. In this embodiment, the elastic modulus of the supporting substrate 12 is higher than the elastic modulus of the base material 2a. A plurality of photoelectric conversion parts 2b (photoelectric conversion elements 2b1 and TFT 2b2) are located above the substrate 2a. The insulating layer 21 is disposed on the substrate 2a. On the insulating layer 21, a gate electrode GE is formed. The gate electrode GE is electrically connected to the above-mentioned control line 2c1. The insulating layer 22 is disposed on the insulating layer 21 and the gate electrode GE. The semiconductor layer SC is disposed on the insulating layer 22 and faces the gate electrode GE. The semiconductor layer SC is formed of a semiconductor material such as amorphous silicon which is an amorphous semiconductor or polysilicon which is a polycrystalline semiconductor. The source electrode SE and the drain electrode DE are provided on the insulating layer 22 and the semiconductor layer SC. The gate electrode GE, the source electrode SE, the drain electrode DE, the control line 2c1, and the data line 2c2 are formed using a low-resistance metal such as aluminum or chromium. The source electrode SE is electrically connected to the source region of the semiconductor layer SC. In addition, the source electrode SE is electrically connected to the aforementioned data line 2c2. The drain electrode DE is electrically connected to the drain region of the semiconductor layer SC. The insulating layer 23 is disposed on the insulating layer 22 , the semiconductor layer SC, the source electrode SE and the drain electrode DE. The photoelectric conversion element 2b1 is electrically connected to the drain electrode DE. The insulating layer 24 is provided on the insulating layer 23 and the photoelectric conversion element 2b1. The bias line BL is provided on the insulating layer 24, passes through a contact hole formed in the insulating layer 24, and is connected to the photoelectric conversion element 2b1. The insulating layer 25 is disposed on the insulating layer 24 and the bias line BL. The insulating layers 21 , 22 , 23 , 24 , and 25 are formed of insulating materials such as inorganic insulating materials and organic insulating materials. Examples of inorganic insulating materials include oxide insulating materials, nitride insulating materials, and oxynitride insulating materials. Examples of organic insulating materials include resins. The scintillator layer 5 is provided on the photoelectric conversion substrate 2 (a plurality of photoelectric conversion parts 2b). The scintillator layer 5 faces the plurality of photoelectric conversion parts 2b. The scintillator layer 5 is located at least in the detection area DA, and covers the plurality of photoelectric conversion parts 2b. The scintillator layer 5 is configured to convert incident X-rays into light (fluorescence). The plurality of photoelectric conversion units 2b are located in the detection area DA. Therefore, when paying attention to the photoelectric conversion substrate 2, the detection area DA is an area where light (visible light) can be detected. In addition, the photoelectric conversion element 2b1 converts light incident from the scintillator layer 5 into charges. The converted charges are accumulated in the photoelectric conversion element 2b1. The TFT 2b2 can switch between storage of electricity to the photoelectric conversion element 2b1 and discharge from the photoelectric conversion element 2b1. In addition, when the self-capacitance of the photoelectric conversion element 2b1 is insufficient, the photoelectric conversion substrate 2 may further have a capacitor (condenser/capacitor), and the electric charge converted by the photoelectric conversion element 2b1 may be accumulated in the capacitor. The scintillator layer 5 is formed by activating cesium iodide (CsI:Tl) with thallium. When the scintillator layer 5 is directly formed on the photoelectric conversion substrate 2 by the vacuum evaporation method, the scintillator layer 5 composed of an aggregate of a plurality of columnar crystals is obtained. The thickness of the scintillator layer 5 is, for example, 600 μm. On the outermost surface of the scintillator layer 5, the thickness of the columnar crystals of the scintillator layer 5 is 8 to 12 μm. The material forming the scintillator layer 5 is not limited to CsI:Tl. The scintillator layer 5 can also be formed by thallium-activated sodium iodide (NaI: Tl), sodium-activated cesium iodide (CsI: Na), europium-activated cesium bromide (CsBr: Eu), sodium iodide (NaI), etc. . In addition, when forming the scintillator layer 5 using a vacuum evaporation method, a mask having openings is used. In this case, the scintillator layer 5 is formed in a region facing the opening on the photoelectric conversion substrate 2 . In addition, scintillation devices that have been evaporated are also deposited on the surface of the mask. In addition, the scintillator is also deposited near the opening of the mask, and the crystals grow in a manner that gradually protrudes toward the inside of the opening. When the crystal protrudes from the mask toward the inside of the opening, vapor deposition of the scintillation device on the photoelectric conversion substrate 2 is suppressed in the vicinity of the opening. For this reason, as shown in FIG. 2 , the thickness of the scintillator layer 5 gradually decreases toward the outside in the vicinity of the periphery. Alternatively, the scintillator layer 5 may have a plurality of scintillator sections arranged in a matrix and provided one-to-one on the photoelectric conversion section 2 b , each having a rectangular columnar shape. When forming such a scintillator layer 5, a scintillator device obtained by mixing phosphorous particles of sulfide (Gd 2 O 2 S) and a binder material is coated on the photoelectric conversion substrate 2, and the scintillator device is fired to form the scintillator layer 5. be hardened. Afterwards, a cutting machine is used to perform cutting, etc., to form grid-shaped grooves in the scintillator. In the above case, an inert gas such as air or nitrogen (N 2 ) for preventing oxidation is sealed between the plurality of scintillator units. Alternatively, the space between the plurality of scintillator units may be set as a space decompressed from atmospheric pressure. In the present embodiment, the X-ray detection panel PNL further includes a light reflection layer 6 . The light reflection layer 6 is disposed on the scintillator layer 5 . In other words, the light reflection layer 6 is provided on the X-ray incident side of the scintillator layer 5 . The light reflection layer 6 is located at least in the detection area DA and covers the upper surface of the scintillator layer 5 . The light reflection layer 6 is provided in order to improve light (fluorescence) utilization efficiency and improve sensitivity characteristics. That is, the light reflection layer 6 reflects the light directed toward the side opposite to the side on which the photoelectric conversion portion 2 b is provided, out of the light generated in the scintillator layer 5 , so as to go toward the photoelectric conversion portion 2 b. Wherein, the light reflection layer 6 may be provided according to the sensitivity characteristics required by the X-ray detection module 10 , and is not necessarily required. For example, the light reflection layer 6 can be formed by applying a coating material mixed with light scattering particles made of titanium oxide (TiO 2 ), resin, and solvent on the scintillator layer 5, and then drying the coating material. . In addition, the structure of the light reflection layer 6 and the manufacturing method of the light reflection layer 6 are not limited to the above-mentioned example, Various deformation|transformation is possible. For example, the light reflection layer 6 may be formed by forming a layer made of a metal having a high light reflectance such as silver alloy or aluminum on the scintillator layer 5 . Alternatively, the light reflection layer 6 may be formed by arranging, on the scintillator layer 5 , a thin sheet of a metal layer with a high light reflectance such as silver alloy or aluminum on the surface, or a resin sheet containing light scattering particles. In addition, when applying a paste-like coating material on the scintillator layer 5 and drying the coating material, the coating material shrinks with drying, so tensile stress is applied to the scintillator layer 5, and sometimes The scintillator layer 5 is peeled off from the photoelectric conversion substrate 2 . For this purpose, it is preferable to provide a thin sheet-shaped light reflection layer 6 on the scintillator layer 5 . In this case, although the light reflection layer 6 can also be bonded on the scintillator layer 5 using a double-sided tape etc., it is preferable to place the light reflection layer 6 on the scintillator layer 5 above all. When the sheet-shaped light reflection layer 6 is placed on the scintillator layer 5 , peeling of the scintillator layer 5 from the photoelectric conversion substrate 2 due to expansion or contraction of the light reflection layer 6 can be easily suppressed. A moisture-proof cover (moisture-proof portion) 7 is provided on the photoelectric conversion substrate 2 , the scintillator layer 5 and the light reflection layer 6 . The moisture-proof cover 7 covers the scintillator layer 5 and the light reflection layer 6 . The moisture-proof cover 7 is provided to prevent deterioration of the properties of the light reflection layer 6 and the properties of the scintillator layer 5 due to moisture contained in the air. The moisture-proof cover 7 completely covers the exposed portion of the scintillator layer 5 . Although the moisture-proof cover 7 is in contact with the light reflection layer 6 , a gap can also be left between the light reflection layer 6 and the light reflection layer 6 . The moisture-proof cover 7 is formed as a thin sheet containing metal. As the metal, there may be mentioned metals containing aluminum, metals containing copper, metals containing magnesium, metals containing tungsten, stainless steel, Kovar, and the like. In the case that the moisture-proof cover 7 contains metal, the moisture-proof cover 7 can prevent or greatly inhibit the penetration of moisture. In addition, the moisture-proof cover 7 may also be formed as a laminated sheet in which a resin layer and a metal layer are laminated. In this case, the resin layer can be made of polyimide resin, epoxy resin, polyethylene terephthalate resin, polytetrafluoroethylene (registered trademark), low-density polyethylene, high-density polyethylene, elastic rubber, etc. formed of materials. The metal layer can be made, for example, to include the aforementioned metals. The metal layer can be formed using a sputtering method, a lamination method, or the like. In this case, it is preferable to provide the metal layer on the side closer to the scintillator layer 5 than the resin layer. Since the metal layer can be covered by the resin layer, it is possible to suppress possible damage to the metal layer due to external force or the like. In addition, when the metal layer is provided on the side of the scintillator layer 5 rather than the resin layer, deterioration of the characteristics of the scintillator layer 5 due to moisture permeation through the resin layer can be suppressed. The moisture-proof cover 7 includes a metal layer-containing sheet, an inorganic insulating layer-containing sheet, a laminated sheet in which a resin layer and a metal layer are laminated, and a laminated sheet in which a resin layer and an inorganic insulating layer are laminated. To sum up, the inorganic layer of the moisture-proof cover 7 can also be an inorganic insulating layer, not limited to a metal layer. Alternatively, the moisture-proof cover 7 may have both the metal layer and the inorganic insulating layer. The inorganic insulating layer can be formed as a layer containing silicon oxide, aluminum oxide, or the like. The inorganic insulating layer can be formed using a sputtering method or the like. In addition, the thickness of the moisture-proof cover 7 may be determined in consideration of X-ray absorption, rigidity (elasticity), and the like. In this case, the larger the thickness of the moisture-proof cover 7 is, the greater the amount of X-rays absorbed by the moisture-proof cover 7 becomes. On the other hand, the smaller the thickness of the moisture-proof cover 7 is, the lower the rigidity of the moisture-proof cover 7 is, and it is easy to be damaged. For example, if the thickness of the moisture-proof cover 7 is less than 10 μm, the rigidity of the moisture-proof cover 7 becomes too low, and damage by external force or the like may cause pinholes in the moisture-proof cover 7 , which may cause leakage. When the thickness of the moisture-proof cover 7 exceeds 50 μm, the rigidity of the moisture-proof cover 7 becomes too high, and the followability to unevenness on the upper end of the scintillator layer 5 deteriorates. For this reason, there is a possibility that confirmation of the above-mentioned gap and leak path may become difficult. Furthermore, it may be difficult to follow the deformation of the photoelectric conversion substrate 2 . For this reason, the thickness of the moisture-proof cover 7 is preferably not less than 10 μm and not more than 50 μm. In this case, the moisture-proof cover 7 can be formed, for example, with an aluminum foil having a thickness of 10 to 50 μm. When the thickness of the aluminum foil is 10 to 50 μm, the amount of X-ray transmission can be increased by about 20 to 30% compared to the aluminum foil with a thickness of 100 μm. In addition, when an aluminum foil having a thickness of 10 to 50 μm is used, the occurrence of the above-mentioned leakage can be suppressed, and the confirmation of the above-mentioned gap and leakage path becomes easy. In addition, the moisture-proof cover 7 can follow deformation such as warping of the photoelectric conversion substrate 2 . In order to reduce the thermal expansion and contraction of the metal, the thickness of the metal such as aluminum is preferably 30 μm or less. At this time, the moisture-proof cover 7 preferably includes an aluminum foil of 10 to 30 μm thereon. The moisture-proof cover 7 according to the present embodiment is an aluminum laminated film including an aluminum foil having a thickness of 10 to 30 μm and a resin layer. For example, when the moisture-proof cover 7 is formed of an aluminum laminated film, the moisture-proof cover 7 has flexibility and can respond to bending. In this case, the rigidity of the moisture-proof cover 7 is lower than the rigidity of the support substrate 12 . The flexible moisture-proof cover 7 and the substrate 2 a help to form a flexible X-ray detection module 10 . Here, since a large amount of X-ray irradiation to the human body has adverse effects on health, the amount of X-ray irradiation to the human body is suppressed to a necessary minimum. Therefore, in the case of the X-ray detector 1 used for medical treatment, the intensity of the irradiated X-rays becomes low, and the intensity of the X-rays transmitted through the moisture-proof cover 7 may become very low. The thickness of the aluminum foil of the moisture-proof cover 7 is 10 to 30 μm, so X-ray images can be taken even when the intensity of the irradiated X-rays is low. FIG. 4 is a plan view showing a part of the X-ray detector 1 , and is a diagram showing a developed projected area PA of the photoelectric conversion substrate 2 . In FIG. 4 , the scintillator layer 5 is obliquely drawn upward to the right, and the sealing portion 8 is obliquely drawn downwardly to the right. FIG. 5 is a cross-sectional view along line VV of a part of the X-ray detector shown in FIG. 4 . In FIGS. 4 and 5 , a state in which the photoelectric conversion substrate 2 extends on the XY plane is described. As shown in FIG. 4 and FIG. 5 , the base material 2 a of the photoelectric conversion substrate 2 includes a main body 2 aa , a plurality of protrusions 2 ab and a plurality of protrusions 2 ac, and is flexible. The main body part 2aa is located in the detection area DA and the non-detection area NDA surrounding the detection area DA. The detection area DA is, for example, a quadrangular area, and the non-detection area NDA is, for example, a quadrangular frame-shaped area. The planar shape of the main body portion 2aa (the planar shape of the photoelectric conversion substrate 2 located in the detection area DA and the non-detection area NDA) is, for example, a square. At least the detection area DA and the non-detection area NDA of the photoelectric conversion substrate 2 are fixed to the first main surface SU1 of the support substrate 12 . Moreover, at least the main body part 2aa among the base material 2a is being fixed to the 1st main surface SU1 of the support board|substrate 12. As shown in FIG. Each protruding portion 2ab protrudes from the side SI1 of the main body portion 2aa, is formed physically continuous from the main body portion 2aa, and is located in the protruding area PAb outside the non-detection area NDA. Each protruding portion 2ac protrudes from the side SI2 of the main body portion 2aa, is formed physically continuous from the main body portion 2aa, and is located in the protruding area PAc outside the non-detection area NDA. In addition, the protruding area PAb of the photoelectric conversion substrate 2 corresponds to the wiring board 2e1 of the X-ray detection panel PNL, and the protruding area PAc of the photoelectric conversion substrate 2 corresponds to the wiring board 2e2 of the X-ray detection panel PNL. In addition, in this embodiment, each protruding area PAb, PAc is a quadrangular area, and is an elongate area, for example. The scintillator layer 5 is located in at least the entirety of the detection area DA. The light reflection layer 6 is located at least in the detection area DA. In this embodiment, the light reflection layer 6 does not cover the side surface 5 a of the scintillator layer 5 at all. Wherein, the light reflective layer 6 may also cover a part of the side surface 5 a of the scintillator layer 5 , or cover the entirety of the side surface 5 a of the scintillator layer 5 . The X-ray detector 1 further includes a sealing portion 8 . The sealing portion 8 is provided around the scintillator layer 5 . The sealing portion 8 has a frame shape and extends continuously around the scintillator layer 5 . In this embodiment, the sealing part 8 is located in the non-detection area NDA. The sealing portion 8 joins the photoelectric conversion substrate 2 (for example, the insulating layer 25 described above) and the moisture-proof cover 7 . The moisture-proof cover 7 is located in the detection area DA and the non-detection area NDA in the plan view shown in FIG. 4 . The moisture-proof cover 7 seals the scintillator layer 5 and the light reflection layer 6 together with the photoelectric conversion substrate 2 . In this embodiment, the moisture-proof cover 7 seals the scintillator layer 5 and the light reflection layer 6 together with the photoelectric conversion substrate 2 and the sealing portion 8 . As shown in FIG. 5 , the portion of the scintillator layer 5 not covered by the photoelectric conversion substrate 2 and the sealing portion 8 is completely covered by the moisture-proof cover 7 . The moisture-proof cover 7 is joined to the outer surface 8 a of the sealing portion 8 . The moisture-proof cover 7 covers at least a part of the sealing portion 8 . For example, when the moisture-proof cover 7 and the sealing part 8 are bonded in an environment reduced in pressure from atmospheric pressure, the moisture-proof cover 7 can be brought into contact with the light reflection layer 6 or the like. In addition, in general, voids of about 10 to 40% of the volume exist in the scintillator layer 5 . Therefore, when gas is contained in the void, when the X-ray detector 1 is transported by an aircraft or the like, the gas may expand and the moisture-proof cover 7 may be damaged. When the moisture-proof cover 7 and the sealing part 8 are bonded in an environment that is depressurized compared to atmospheric pressure, even when the X-ray detector 1 is transported by an aircraft or used in a high place, Damage to the moisture-proof cover 7 can still be suppressed. To sum up, the pressure of the space partitioned by the sealing portion 8 and the moisture-proof cover 7 is preferably lower than the atmospheric pressure. The sealing portion 8 is formed of a material containing thermoplastic resin. The sealing portion 8 is formed of a material containing a thermoplastic resin as a main component. The sealing part 8 may be formed of 100% thermoplastic resin. Alternatively, the sealing portion 8 may also be formed of a thermoplastic resin doped with additives. When the sealing part 8 contains thermoplastic resin as a main component, the sealing part 8 can bond the photoelectric conversion substrate 2 and the moisture-proof cover 7 by heating. As the thermoplastic resin, nylon, PET (Polyethyleneterephthalate), polyurethane, polyester, polyvinyl chloride, ABS (Acrylonitrile Butadiene Styrene), acrylic, polystyrene, polyethylene, polypropylene, etc. can be used. The control circuit 3a is located in the protruding area PAb, and the control circuit 3b is located in the protruding area PAc. The control circuit 3a is mounted on the protruding area PAb (wiring board 2e1) of the photoelectric conversion substrate 2, and the control circuit 3b is mounted on the protruding area PAc of the photoelectric conversion substrate 2 (wiring board 2e2). Focusing on the control circuit 3a representing the control circuit 3a and the control circuit 3b, in this embodiment, the control circuit 3a is mounted on the lower surface of the wiring board 2e1 (the surface of the wiring board 2e1 on the supporting board 12 side). However, the control circuit 3a may be mounted on the upper surface of the wiring substrate 2e1 (the surface of the wiring substrate 2e1 on the scintillator layer 5 side). FIG. 6 is an enlarged cross-sectional view showing the detection area DA, the non-detection area NDA, and the protruding area PAb of the X-ray detection module 10 , and is an expanded view showing the protruding area PAb. As shown in FIG. 6, a plurality of photoelectric conversion elements 2b1 are disposed above the main body portion 2aa. The photoelectric conversion substrate 2 is formed to be physically continuous over the detection area DA, the non-detection area NDA, and the protrusion area PAb. In the photoelectric conversion substrate 2 , not only the base material 2 a but also the insulating layers 21 to 25 are formed physically continuous over the detection area DA, the non-detection area NDA, and the protruding area PAb. In addition, all of the insulating layers 21 to 25 may not be formed in the protruding region PAb of the photoelectric conversion substrate 2 . 7 is an enlarged plan view showing the non-detection area NDA and the protruded area PAb of the X-ray detection panel PNL, and is a diagram showing the expanded area PAb, and shows the control circuit 3a and the connector together CN's graph. As shown in FIG. 7 , the X-ray detector 1 includes a connector CN. The connector CN is mounted on the wiring board 2e1. The photoelectric conversion substrate 2 also includes a plurality of wirings such as a plurality of wirings WL1 and a plurality of wirings WL2 in addition to the plurality of control lines 2c1 and the plurality of data lines 2c2 shown in FIG. 2 . The wiring WL1 is located above the main body portion 2aa and the protruding portion 2ab of the base material 2a, and is formed to be physically continuous over the non-detection area NDA and the protruding area PAb. The wiring WL2 is located above the protruding portion 2ab. The wiring WL1 and the wiring WL2 may be located between the insulating layer 21 and the insulating layer 22 shown in FIG. 3 , or between the insulating layer 22 and the insulating layer 23 . Each wiring WL1 is electrically connected to the above-mentioned control line 2c1 on the one hand, and is electrically connected to the control circuit 3a on the other hand. The wiring WL1 may also be formed physically continuous with the control line 2c1. Each wiring WL2 is electrically connected to the control circuit 3a on the one hand, and is electrically connected to the connector CN on the other hand. For example, the wiring WL1, the wiring WL2, and the control line 2c1 may be formed simultaneously from the same material. 7, the configuration of the control circuit 3a, connector CN, wiring board 2e1, etc., is also applicable to the configuration of the wiring board 2e2, control circuit 3b, and connectors mounted on the wiring board 2e2. As shown in FIG. 7 and FIG. 2 , a plurality of wirings WL1 and a plurality of wirings WL2 are electrically connected to a plurality of photoelectric conversion elements 2b1 via a plurality of TFTs 2b2 and the like. The control circuit 3a is a driving circuit, together with the circuit substrate 11, it provides the control signal S1 to the control line 2c1, drives the control line 2c1 and TFT 2b2, and controls the timing of taking out the image data signal S2 from the photoelectric conversion part 2b. On the other hand, the control circuit 3b shown in FIG. 4 is a circuit for reading the image data signal S2, and together with the circuit board 11, reads the image data signal S2 from the data line 2c2. The X-ray detector 1 is configured as described above. According to the X-ray detector 1 of the first embodiment configured as described above, the photoelectric conversion substrate 2 has: a flexible base material 2a including a main body 2aa and protrusions 2ab, 2ac; a plurality of photoelectric conversion substrates 2a; an element 2b1; and a plurality of wirings WL1. The protruding portion 2ab protrudes from the side SI1 of the main body portion 2aa, is formed physically continuous from the main body portion 2aa, and is located in the protruding area PAb. A plurality of wiring boards 2e1 and 2e2 among the photoelectric conversion boards 2 function as FPCs. For this reason, the process itself for connecting the FPC to the photoelectric conversion substrate 2 (X-ray detection panel PNL) using a thermocompression bonding method can be eliminated. For this reason, it is possible to obtain the X-ray detector 1 which can shorten the manufacturing time. Also, there will be no suspense about insufficient adhesion, non-conductivity, etc. between the photoelectric conversion substrate 2 and the FPC. For this reason, the photoelectric conversion substrate 2 with high product reliability is produced. In addition, a photoelectric conversion substrate 2 with a high manufacturing yield can be obtained. The manufacturing time is shortened as described above, and the X-ray detector 1 does not additionally require an FPC to connect the photoelectric conversion substrate 2 and the circuit substrate 11 . For this reason, it is possible to obtain the X-ray detector 1 in which the manufacturing cost can be suppressed. The base material 2a is flexible, so the X-ray detection panel PNL is a flexible panel. When the X-ray detection panel PNL is a flexible panel, it is difficult to fix the X-ray detection panel PNL inside the casing 51 . Then, the X-ray detection panel PNL is supported by the support substrate 12 which is a rigid substrate. Accordingly, the X-ray detection panel PNL can be easily fixed inside the housing 51 together with the support substrate 12 . On the side SI1 of the main body portion 2aa, a plurality of wiring boards 2e1 are provided at intervals in the row direction Y. As shown in FIG. On the side SI2 of the main body portion 2aa, a plurality of wiring boards 2e2 are provided at intervals in the column direction X. As shown in FIG. Since the wiring board 2e is flexible, it is preferable to divide the wiring board 2e into a plurality at intervals as in the present embodiment from the viewpoint of workability during manufacture of the X-ray detector 1 . Accordingly, workability can be improved when the plurality of wiring boards 2e2 are physically connected without gaps compared to when the plurality of wiring boards 2e1 are physically connected without gaps. In addition, the number of wiring boards 2e1 and the number of wiring boards 2e2 may be two or more, respectively. (Modification 1) Next, Modification 1 of the first embodiment described above will be described. FIG. 8 is a plan view showing part of the X-ray detector 1 according to Modification 1, and is a developed view showing the protruding area PA of the photoelectric conversion substrate 2 . The X-ray detector 1 has the same configuration as that of the above-mentioned first embodiment except for the configuration described in Modification 1. As shown in FIG. 8, a plurality of protruding portions of the base material 2a may protrude from the four sides SI of the main body portion 2aa. The protruding portion 2ab protrudes from the side SI3 of the main body portion 2aa, is formed physically continuous from the main body portion 2aa, and is located in the protruding area PAb outside the non-detection area NDA. The X-ray detection panel PNL (photoelectric conversion substrate 2 ) has a plurality of wiring substrates 2e1 including protruding portions 2ab on both sides of the main body portion 2aa in the column direction X, respectively. The control circuit 3a is mounted on each wiring board 2e1. The protruding portion 2ac protrudes from the side SI4 of the main body portion 2aa, is formed physically continuous from the main body portion 2aa, and is located in the protruding area PAc outside the non-detection area NDA. The X-ray detection panel PNL (photoelectric conversion substrate 2 ) has a plurality of wiring substrates 2e2 including protruding portions 2ac on both sides of the main body portion 2aa in the row direction Y, respectively. The control circuit 3b is mounted on each wiring board 2e2. Also in this modification 1, the same effect as that of the above-mentioned first embodiment can be obtained. In addition, the number of wiring boards 2e1 on the side SI1 side, the number of wiring boards 2e2 on the side SI2 side, the number of wiring boards 2e1 on the side SI3 side, and the number of wiring boards 2e2 on the side SI4 side are 2 or more. Can. (Modification 2) Next, Modification 2 of the above-mentioned first embodiment will be described. FIG. 9 is a plan view showing part of the X-ray detector 1 according to Modification 2, and is a developed view showing the protruding area PA of the photoelectric conversion substrate 2 . The X-ray detector 1 has the same configuration as that of the above-mentioned first embodiment except for the configuration described in the second modification. As shown in FIG. 9, the X-ray detector 1 may be configured without a plurality of wiring boards 2e1 and a plurality of control circuits 3a. The control line 2c1 is further electrically connected to the wiring board 2e2. The control circuit 3b further also functions as a drive circuit for driving the control line 2c1. As mentioned above, a plurality of protruding parts may protrude from only one side (side SI2) of the main body part 2aa. Also in this modification 2, the same effect as that of the above-mentioned first embodiment can be obtained. In addition, the number of wiring boards 2e2 may be two or more. (Modification 3) Next, Modification 3 of the first embodiment described above will be described. FIG. 10 is a plan view showing a part of the X-ray detector 1 according to Modification 3. As shown in FIG. The X-ray detector 1 has the same configuration as that of the above-mentioned first embodiment except for the configuration described in the third modification. As shown in FIG. 10 , the photoelectric conversion substrate 2 has a single wiring substrate 2e1 on the side SI1 of the main body portion 2aa. Three control circuits 3a are mounted on the wiring board 2e1. However, the number of control circuits 3a is not limited to three, and various modifications are possible. On the side SI2 of the main body portion 2aa, the photoelectric conversion substrate 2 has a single wiring substrate 2e2. Three control circuits 3b are mounted on the wiring board 2e2. However, the number of control circuits 3b is not limited to three, and various modifications are possible. Roughly, the configuration of the wiring board 2e1 according to Modification 3 corresponds to a configuration in which a plurality of wiring boards 2e1 shown in FIG. 4 are physically connected without gaps. In addition, the configuration of the wiring board 2e2 according to Modification 3 corresponds to a configuration in which a plurality of wiring boards 2e2 shown in FIG. 4 are physically connected without gaps. In Modification 3, the X-ray detector 1 also does not require an FPC for connecting the photoelectric conversion substrate 2 and the circuit board 11 , so that the same effects as those of the above-mentioned first embodiment can be obtained. (Second Embodiment) Next, a second embodiment will be described. 11 is a cross-sectional view illustrating a part of the X-ray detector according to the second embodiment, and is a view showing a developed projected region of the photoelectric conversion substrate. The X-ray detector 1 is configured similarly to the first embodiment described above, except for the configuration described in this embodiment. As shown in FIG. 11 , the scintillator layer 5 may not be formed directly on the photoelectric conversion substrate 2 . The X-ray detector 1 includes a support substrate 12, a photoelectric conversion substrate 2, a control circuit 3a, a scintillator panel SP, and the like. The scintillator panel SP includes a substrate 15 , a light reflection layer 16 , a scintillator layer 5 , and a moisture barrier 17 . The substrate 15 is located in the detection area DA and the non-detection area NDA, and is formed of CFRP. CFRP is a material with high X-ray transmittance. The scintillator layer 5 is located between the substrate 15 and the photoelectric conversion substrate 2 . The scintillator layer 5 faces the substrate 15 with a gap. The scintillator layer 5 is located at least in the detection area DA. In this embodiment, the scintillator layer 5 is located in the detection area DA and the non-detection area NDA. The light reflection layer 16 is disposed between the substrate 15 and the scintillator layer 5 . The light reflection layer 16 is located in the detection area DA and the non-detection area NDA. The light reflective layer 16 is provided to increase the utilization efficiency of fluorescent light to improve the sensitivity characteristics. That is, the light reflection layer 16 has a function of reflecting fluorescent light converted by the scintillator layer 5 . The light reflection layer 16 reflects light directed toward the side opposite to the side of the photoelectric conversion substrate 2, so that the amount of light directed toward the photoelectric conversion portion 2b can be increased. The moisture-proof body 17 covers the substrate 15 , the light reflection layer 16 and the scintillator layer 5 . The moisture barrier 17 seals the scintillator layer 5 airtight together with the light reflection layer 16 . The moisture barrier 17 is formed using, for example, a chemical vapor deposition (CVD: Chemical Vapor Deposition) method using an organic material such as poly-para-xylylene (poly-para-xylylene) resin. The moisture barrier 17 formed of parylene resin can be called an organic film. X-ray detector 1 further includes an adhesive layer AL. The adhesive layer AL is located between the photoelectric conversion substrate 2 and the scintillator panel SP. Specifically, the adhesive layer AL bonds the insulating layer 25 of the photoelectric conversion substrate 2 and the moisture barrier 17 of the scintillator panel SP, respectively. The photoelectric conversion substrate 2 and the scintillator panel SP are bonded through the adhesive layer AL. Also in the second embodiment, the photoelectric conversion substrate 2 is configured in the same manner as the photoelectric conversion substrate 2 of the above-mentioned first embodiment. Therefore, also in this second embodiment, the same effect as that of the above-mentioned first embodiment can be obtained. (Comparative example) Next, a comparative example of the above-mentioned first embodiment will be described. FIG. 12 is an enlarged cross-sectional view showing the non-detection area NDA and its surrounding area of the X-ray detection module 10 of the X-ray detector 1 according to this comparative example. The X-ray detector 1 has the same configuration as that of the above-mentioned first embodiment except for the configuration described in this comparative example. As shown in FIG. 12, the X-ray detection panel PNL (photoelectric conversion substrate 2) is formed without the wiring substrate 2e. For example, base material 2a is formed without protrusions 2ab and 2ac. The photoelectric conversion substrate 2 further has a pad 2d. The pad 2d is located in the non-detection area NDA. Pad 2d is formed on insulating layer 23 and covered with insulating layers 24,25. The pad 2d is electrically connected to, for example, the control line 2c1. X-ray detector 1 further includes FPC20. The FPC 20 is fixed to the photoelectric conversion substrate 2 (X-ray detection panel PNL) through the connection material AD by thermocompression bonding, and is electrically connected to the pad 2d. According to the X-ray detector 1 of the comparative example configured as described above, concerns such as insufficient adhesive force and non-conduction arise between the photoelectric conversion substrate 2 and the FPC 20 . For this, using an FPC20 is not ideal. Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the inventions described in the claims and their equivalents. A plurality of embodiments and a plurality of modified examples can also be combined as necessary. The above-mentioned technology is not limited to be applied to the above-mentioned photoelectric conversion substrate 2 , and can be applied to other photoelectric conversion substrates. In addition, the technique described above is not limited to application to the X-ray detector 1 described above, but can be applied to other X-ray detectors and various radiation detectors. The radiation detector may include a radiation detection panel for detecting radiation instead of the X-ray detection panel PNL.

1:X射線檢測器 2:光電轉換基板 2a:基材 2aa:主體部 2ab:突出部 2ac:突出部 2b:光電轉換部 2b1:光電轉換元件 2b2:薄膜電晶體 2c1:控制線 2c2:資料線 2d:墊 2e1:佈線基板 2e2:佈線基板 3a:控制電路 3b:控制電路 4:影像傳送部 4a:佈線 5:閃爍器層 5a:側面 6:光反射層 7:防潮蓋 8:密封部 8a:外表面 9a:間隔物 9b:間隔物 9c:間隔物 9d:間隔物 10:X射線檢測模組 11:電路基板 12:支撐基板 15:基板 16:光反射層 17:防潮體1: X-ray detector 2: Photoelectric conversion substrate 2a: Substrate 2aa: main body 2ab: protrusion 2ac: protrusion 2b: Photoelectric conversion part 2b1: Photoelectric conversion element 2b2: Thin Film Transistor 2c1: Control line 2c2: data line 2d: pad 2e1: Wiring substrate 2e2: Wiring substrate 3a: Control circuit 3b: Control circuit 4: Image transmission department 4a: Wiring 5: scintillator layer 5a: side 6: Light reflection layer 7: Moisture-proof cover 8: Sealing part 8a: Outer surface 9a: Spacer 9b: spacer 9c: spacer 9d: spacer 10: X-ray inspection module 11: Circuit board 12: Support substrate 15: Substrate 16: Light reflection layer 17: Moisture-proof body

20:FPC 20: FPC

21:絕緣層 21: Insulation layer

22:絕緣層 22: Insulation layer

23:絕緣層 23: Insulation layer

24:絕緣層 24: Insulation layer

25:絕緣層 25: insulation layer

51:殼體 51: shell

52:入射窗 52: Incident window

AL:黏合層 AL: Adhesive layer

AD:連接材 AD: connecting material

BL:偏壓線 BL: bias line

CN:連接器 CN:Connector

DA:檢測區域 DA: detection area

DE:汲極電極 DE: drain electrode

GE:閘極電極 GE: gate electrode

NDA:非檢測區域 NDA: non-detection area

PAb:突出區域 PAb: Prominent region

PAc:突出區域 PAc: prominent area

PNL:X射線檢測面板 PNL: X-ray inspection panel

S1:控制訊號 S1: Control signal

S2:影像資料訊號 S2: Video data signal

SC:半導體層 SC: semiconductor layer

SE:源極電極 SE: source electrode

SI1:邊 SI1: side

SI2:邊 SI2: side

SI3:邊 SI3: side

SI4:邊 SI4: side

SP:閃爍器面板 SP: scintillator panel

SU1:第1主面 SU1: 1st main surface

SU2:第2主面 SU2: 2nd main surface

SU3:側面 SU3: side

SU4:側面 SU4: side

WL1:佈線 WL1: Wiring

WL2:佈線 WL2: Wiring

[圖1]圖1為就涉及第1實施方式的X射線檢測器進行繪示的截面圖。 [圖2]圖2為就上述X射線檢測器的支撐基板、X射線檢測面板及電路基板進行繪示的斜視圖，並為一併示出影像傳送部的圖。 [圖3]圖3為就上述X射線檢測器的X射線檢測模組的檢測區域進行繪示的放大剖面圖。 [圖4]圖4為就上述X射線檢測器的一部分進行繪示的平面圖，並為將光電轉換基板的突出區域展開而示出的圖。 [圖5]圖5為就示於圖4的X射線檢測器的一部分沿著線V-V進行繪示的截面圖。 [圖6]圖6為就上述X射線檢測模組的檢測區域、非檢測區域及突出區域進行繪示的放大剖面圖，並為將突出區域展開而示出的圖。 [圖7]圖7為就上述X射線檢測面板的非檢測區域及突出區域進行繪示的放大平面圖，為將突出區域展開而示出的圖，並為一併示出控制電路及連接器的圖。 [圖8]圖8為就涉及上述第1實施方式的變形例1的X射線檢測器的一部分進行繪示的平面圖，並為將光電轉換基板的突出區域展開而示出的圖。 [圖9]圖9為就涉及上述第1實施方式的變形例2的X射線檢測器的一部分進行繪示的平面圖，並為將光電轉換基板的突出區域展開而示出的圖。 [圖10]圖10為就涉及上述第1實施方式的變形例3的X射線檢測器的一部分進行繪示的平面圖，並為將光電轉換基板的突出區域展開而示出的圖。 [圖11]圖11為就涉及第2實施方式的X射線檢測器的一部分進行繪示的截面圖，並為將光電轉換基板的突出區域展開而示出的圖。 [圖12]圖12為就涉及比較例的X射線檢測器的X射線檢測模組的非檢測區域與其周邊的區域進行繪示的放大剖面圖。 [ Fig. 1] Fig. 1 is a cross-sectional view illustrating an X-ray detector according to a first embodiment. [FIG. 2] FIG. 2 is a perspective view showing the support substrate, the X-ray detection panel, and the circuit board of the above-mentioned X-ray detector, and also shows an image transmission unit. [ Fig. 3] Fig. 3 is an enlarged cross-sectional view illustrating a detection region of an X-ray detection module of the above-mentioned X-ray detector. [ Fig. 4] Fig. 4 is a plan view showing a part of the above-mentioned X-ray detector, in which a protruding region of the photoelectric conversion substrate is expanded. [ Fig. 5] Fig. 5 is a cross-sectional view along line V-V of a part of the X-ray detector shown in Fig. 4 . [FIG. 6] FIG. 6 is an enlarged cross-sectional view showing the detection area, non-detection area, and protruding area of the above-mentioned X-ray detection module, and is a diagram showing the protruding area expanded. [FIG. 7] FIG. 7 is an enlarged plan view showing the non-detection area and the protruding area of the above-mentioned X-ray detection panel. The protruding area is expanded and shown, and the control circuit and connector are also shown. picture. [ Fig. 8] Fig. 8 is a plan view showing a part of an X-ray detector according to Modification 1 of the first embodiment, and is a view in which a projected region of a photoelectric conversion substrate is expanded. [ Fig. 9] Fig. 9 is a plan view illustrating a part of an X-ray detector according to Modification 2 of the first embodiment, and is a view in which a projected region of a photoelectric conversion substrate is expanded. [FIG. 10] FIG. 10 is a plan view showing a part of an X-ray detector according to Modification 3 of the first embodiment, and is a diagram in which a projected region of a photoelectric conversion substrate is expanded. [ Fig. 11] Fig. 11 is a cross-sectional view illustrating a part of an X-ray detector according to a second embodiment, and is a view in which a projected region of a photoelectric conversion substrate is developed. [ Fig. 12] Fig. 12 is an enlarged cross-sectional view showing a non-detection area and its surrounding area of an X-ray detection module of an X-ray detector according to a comparative example.

1:X射線檢測器 1: X-ray detector

2:光電轉換基板 2: Photoelectric conversion substrate

2a:基材 2a: Substrate

2aa:主體部 2aa: main body

2ab:突出部 2ab: protrusion

2ac:突出部 2ac: protrusion

2e1:佈線基板 2e1: Wiring substrate

2e2:佈線基板 2e2: Wiring substrate

3a:控制電路 3a: Control circuit

3b:控制電路 3b: Control circuit

5:閃爍器層 5: scintillator layer

7:防潮蓋 7: Moisture-proof cover

8:密封部 8: Sealing part

10:X射線檢測模組 10: X-ray inspection module

12:支撐基板 12: Support substrate

DA:檢測區域 DA: detection area

NDA:非檢測區域 NDA: non-detection area

PAb:突出區域 PAb: Prominent region

PAc:突出區域 PAc: prominent area

SI1:邊 SI1: side

SI2:邊 SI2: side

Claims (2)

一種光電轉換基板，其具備：包含主體部及突出部並具可撓性的基材；複數個光電轉換元件；及複數個佈線；以及控制電路；前述主體部位於檢測區域及包圍前述檢測區域的非檢測區域，前述突出部位於從前述主體部的邊突出，被從前述主體部物理上連續而形成，並位於前述非檢測區域的外側的突出區域，前述複數個光電轉換元件設於前述主體部之上方，並位於前述檢測區域，前述複數個佈線位於前述主體部及前述突出部之上方，並電連接於前述複數個光電轉換元件，前述控制電路，位於前述突出區域並電連接於前述複數個佈線。 A photoelectric conversion substrate comprising: a flexible base material including a main body and a protrusion; a plurality of photoelectric conversion elements; and a plurality of wirings; and a control circuit; the main body is located in a detection area and surrounds the detection area In the non-detection area, the protruding portion protrudes from the side of the main body, is formed physically continuous from the main body, and is located outside the non-detection area, and the plurality of photoelectric conversion elements are provided on the main body above and located in the detection region, the plurality of wirings are located above the main body and the protrusion and are electrically connected to the plurality of photoelectric conversion elements, the control circuit is located in the protrusion region and electrically connected to the plurality of wiring. 如請求項1的光電轉換基板，其中，前述突出部及前述複數個佈線所位於之前述突出區域可彎曲180°。The photoelectric conversion substrate according to claim 1, wherein the protruding region where the protruding portion and the plurality of wirings are located can be bent by 180°.
TW110138888A 2021-01-13 2021-10-20 Photoelectric conversion substrate TWI802051B (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012118050A (en) * 2010-11-09 2012-06-21 Fujifilm Corp Radiographic device
JP2013253887A (en) * 2012-06-07 2013-12-19 Canon Inc Radiographic device, radiographic system
CN109073766A (en) * 2016-05-10 2018-12-21 卡尔斯特里姆保健公司 Flexible substrate flip chip reparation
CN109196385A (en) * 2016-05-26 2019-01-11 皇家飞利浦有限公司 Multifunctional radiation detector
CN109844684A (en) * 2016-10-27 2019-06-04 株式会社半导体能源研究所 Data processing equipment, display device and electronic equipment
US20200395431A1 (en) * 2013-03-07 2020-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
TW202209651A (en) * 2020-08-26 2022-03-01 日商京瓷股份有限公司 Radiation detection device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015219208A (en) 2014-05-21 2015-12-07 株式会社東芝 Scintillator panel and radiation detector

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012118050A (en) * 2010-11-09 2012-06-21 Fujifilm Corp Radiographic device
JP2013253887A (en) * 2012-06-07 2013-12-19 Canon Inc Radiographic device, radiographic system
US20200395431A1 (en) * 2013-03-07 2020-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
CN109073766A (en) * 2016-05-10 2018-12-21 卡尔斯特里姆保健公司 Flexible substrate flip chip reparation
CN109196385A (en) * 2016-05-26 2019-01-11 皇家飞利浦有限公司 Multifunctional radiation detector
CN109844684A (en) * 2016-10-27 2019-06-04 株式会社半导体能源研究所 Data processing equipment, display device and electronic equipment
TW202209651A (en) * 2020-08-26 2022-03-01 日商京瓷股份有限公司 Radiation detection device

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