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TWI800235B - 原子層沉積系統 - Google Patents

原子層沉積系統 Download PDF

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Publication number
TWI800235B
TWI800235B TW111102973A TW111102973A TWI800235B TW I800235 B TWI800235 B TW I800235B TW 111102973 A TW111102973 A TW 111102973A TW 111102973 A TW111102973 A TW 111102973A TW I800235 B TWI800235 B TW I800235B
Authority
TW
Taiwan
Prior art keywords
layer deposition
atomic layer
deposition system
atomic
layer
Prior art date
Application number
TW111102973A
Other languages
English (en)
Other versions
TW202330983A (zh
Inventor
吳學憲
詹志遠
賴奕廷
Original Assignee
矽碁科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 矽碁科技股份有限公司 filed Critical 矽碁科技股份有限公司
Priority to TW111102973A priority Critical patent/TWI800235B/zh
Application granted granted Critical
Publication of TWI800235B publication Critical patent/TWI800235B/zh
Publication of TW202330983A publication Critical patent/TW202330983A/zh

Links

TW111102973A 2022-01-24 2022-01-24 原子層沉積系統 TWI800235B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW111102973A TWI800235B (zh) 2022-01-24 2022-01-24 原子層沉積系統

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111102973A TWI800235B (zh) 2022-01-24 2022-01-24 原子層沉積系統

Publications (2)

Publication Number Publication Date
TWI800235B true TWI800235B (zh) 2023-04-21
TW202330983A TW202330983A (zh) 2023-08-01

Family

ID=86948928

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111102973A TWI800235B (zh) 2022-01-24 2022-01-24 原子層沉積系統

Country Status (1)

Country Link
TW (1) TWI800235B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183171A1 (en) * 1999-03-11 2003-10-02 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
TW201546315A (zh) * 2014-03-18 2015-12-16 Tokyo Electron Ltd 成膜裝置
TW201840895A (zh) * 2016-12-21 2018-11-16 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202020216A (zh) * 2018-08-10 2020-06-01 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202202655A (zh) * 2020-07-10 2022-01-16 天虹科技股份有限公司 可減少前驅物沉積的原子層沉積設備與製程方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183171A1 (en) * 1999-03-11 2003-10-02 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
TW201546315A (zh) * 2014-03-18 2015-12-16 Tokyo Electron Ltd 成膜裝置
TW201840895A (zh) * 2016-12-21 2018-11-16 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202020216A (zh) * 2018-08-10 2020-06-01 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202202655A (zh) * 2020-07-10 2022-01-16 天虹科技股份有限公司 可減少前驅物沉積的原子層沉積設備與製程方法

Also Published As

Publication number Publication date
TW202330983A (zh) 2023-08-01

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