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TWI852922B - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
TWI852922B
TWI852922B TW108106384A TW108106384A TWI852922B TW I852922 B TWI852922 B TW I852922B TW 108106384 A TW108106384 A TW 108106384A TW 108106384 A TW108106384 A TW 108106384A TW I852922 B TWI852922 B TW I852922B
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adhesive
film
semiconductor element
semiconductor
film adhesive
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TW108106384A
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Chinese (zh)
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TW201938720A (en
Inventor
中村祐樹
大久保恵介
彼谷美千子
山中大輔
矢羽田達也
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日商力森諾科股份有限公司
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Publication of TWI852922B publication Critical patent/TWI852922B/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

本發明的半導體裝置的製造方法包括：第一打線接合步驟，將第一半導體元件經由第一導線而電性連接於基板上；壓接步驟，將第二半導體元件經由具有熱硬化性的接著劑而壓接於所述基板；以及加熱加壓步驟，於加壓環境下對所述壓接步驟後的接著劑進行加熱，藉此而對所述接著劑進行硬化處理。藉由經過加熱加壓步驟，而將所述第一導線的至少一部分及所述第一半導體元件的至少一者埋入硬化處理後的接著劑中。硬化處理前的所述接著劑的120℃下的熔融黏度為1000Pa．s~3000Pa．s。 The manufacturing method of the semiconductor device of the present invention includes: a first wire bonding step, electrically connecting the first semiconductor element to the substrate via the first wire; a pressing step, pressing the second semiconductor element to the substrate via a thermosetting adhesive; and a heating and pressurizing step, heating the adhesive after the pressing step in a pressurized environment to harden the adhesive. By the heating and pressurizing step, at least a portion of the first wire and at least one of the first semiconductor element are buried in the adhesive after the hardening treatment. The melt viscosity of the adhesive at 120°C before the hardening treatment is 1000Pa.s~3000Pa.s.

Description

半導體裝置的製造方法 Semiconductor device manufacturing method

本發明是有關於一種半導體裝置的製造方法及其中可使用的膜狀接著劑。 The present invention relates to a method for manufacturing a semiconductor device and a film adhesive that can be used therein.

隨著行動電話等的多功能化，將半導體元件積層為多段且加以高容量化的堆疊式多晶片封裝(Multi Chip Package，MCP)正在普及。於半導體元件的安裝中，廣泛使用膜狀接著劑來作為黏晶(die bonding)用的接著劑。作為使用膜狀接著劑的多段積層封裝體的一例，可列舉線埋入型的封裝體。其是藉由使用高流動的膜狀接著劑來進行壓接，而將與壓接側的半導體元件連接的導線，一邊利用接著劑覆蓋一邊壓接的封裝體，且搭載於行動電話、行動音訊(audio)設備用的存儲器封裝體等中。 As mobile phones and other devices become more multifunctional, stacked multi-chip packages (MCPs) that stack semiconductor components in multiple stages and increase their capacity are becoming more popular. Film adhesives are widely used as adhesives for die bonding in the mounting of semiconductor components. As an example of a multi-stage laminated package using a film adhesive, a wire embedding type package can be cited. This is a package that uses a high-flow film adhesive for press bonding, and the wire connected to the semiconductor component on the press-bonded side is press-bonded while being covered with an adhesive. It is also used in mobile phones, storage packages for mobile audio devices, etc.

作為所述堆疊式MCP等半導體裝置所要求的重要特性之一，可列舉連接可靠性。為了提升連接可靠性，正在進行考量耐熱性、耐濕性及耐回流性等特性的膜狀接著劑的開發。作為此種膜狀接著劑，例如專利文獻1中提出有一種接著片，其含有樹脂及填料，且厚度為10μm~250μm，所述樹脂包含高分子量成分、及以環氧樹脂為主成分的熱硬化性成分。另外，專利文獻2中提出有一種接著劑組成物，其含有：包含環氧樹脂與酚樹脂的 混合物、及丙烯酸共聚物。 As one of the important characteristics required for semiconductor devices such as the stacked MCP, connection reliability can be cited. In order to improve connection reliability, film adhesives are being developed that take into account characteristics such as heat resistance, moisture resistance, and reflow resistance. As such a film adhesive, for example, Patent Document 1 proposes a bonding sheet that contains a resin and a filler and has a thickness of 10μm to 250μm, wherein the resin contains a high molecular weight component and a thermosetting component with an epoxy resin as the main component. In addition, Patent Document 2 proposes an adhesive composition that contains: a mixture of an epoxy resin and a phenolic resin, and an acrylic copolymer.

半導體裝置的連接可靠性很大程度上亦取決於是否可不在接著面產生空隙地安裝半導體元件。因此，正設法實現以可不產生空隙地壓接半導體元件的方式使用高流動的膜狀接著劑、或以可利用半導體元件的密封步驟來消除所產生的空隙的方式使用熔融黏度低的膜狀接著劑等。另外，專利文獻3中提出有一種黏度低且黏接強度低的接著片。 The connection reliability of semiconductor devices also largely depends on whether semiconductor components can be mounted without generating gaps on the bonding surface. Therefore, efforts are being made to use a high-flow film adhesive in a way that can press-bond semiconductor components without generating gaps, or to use a film adhesive with low melt viscosity in a way that can eliminate the gaps generated by the sealing step of the semiconductor components. In addition, Patent Document 3 proposes a bonding sheet with low viscosity and low bonding strength.

[現有技術文獻] [Prior art literature] [專利文獻] [Patent Literature]

專利文獻1：國際公開第2005/103180號公報 Patent document 1: International Publication No. 2005/103180

專利文獻2：日本專利特開2002-220576號公報 Patent document 2: Japanese Patent Publication No. 2002-220576

專利文獻3：日本專利特開2009-120830號公報 Patent document 3: Japanese Patent Publication No. 2009-120830

但最近於堆疊式MCP的製造中，有時於將半導體元件經由具有熱硬化性的接著劑而壓接於基板後，藉由於使用加壓烘箱等的加壓環境下進行加熱來實施接著劑的硬化處理。加壓烘箱為可對內部的環境進行加熱及加壓的裝置，於加壓烘箱中，接著劑一邊承受來自周圍氣體的壓力一邊得到加熱。藉此，可更有效果地減少或消除半導體元件的接著面的空隙。 However, in the recent manufacture of stacked MCP, after the semiconductor components are pressed onto the substrate with a thermosetting adhesive, the adhesive is hardened by heating in a pressurized environment such as a pressurized oven. A pressurized oven is a device that can heat and pressurize the internal environment. In a pressurized oven, the adhesive is heated while being subjected to pressure from the surrounding gas. This can more effectively reduce or eliminate the gaps on the bonding surface of the semiconductor components.

然而，先前的接著膜並未設想在加壓烘箱中使用，因此於發生半導體元件的位置偏移、或導線等的埋入性不充分等方面 尚有改善的餘地。 However, previous adhesive films were not designed to be used in a pressurized oven, so there is still room for improvement in terms of positional shifts of semiconductor components and insufficient embedding of wires, etc.

本發明是鑒於所述情況而成者，其目的在於提供一種於藉由加壓環境下的加熱來實施接著劑的硬化處理的情況下，導線等的埋入性亦優異，且能夠抑制半導體元件發生位置偏移的半導體裝置的製造方法及其中可使用的接著劑。 The present invention is made in view of the above situation, and its purpose is to provide a method for manufacturing a semiconductor device and an adhesive that can be used therein, which can achieve excellent embedding properties of wires, etc., and can suppress positional displacement of semiconductor elements when the adhesive is hardened by heating in a pressurized environment.

本發明的半導體裝置的製造方法包括：第一打線接合(wire bonding)步驟，將第一半導體元件經由第一導線而電性連接於基板上；壓接步驟，將第二半導體元件經由具有熱硬化性的接著劑而壓接於所述基板；以及加熱加壓步驟，於加壓環境下對所述壓接步驟後的接著劑進行加熱，藉此而對所述接著劑進行硬化處理。藉由經過所述加熱加壓步驟，而將所述第一導線的至少一部分及所述第一半導體元件的至少一者埋入硬化處理後的接著劑中。於所述半導體裝置的製造方法中，硬化處理前的所述接著劑的120℃下的熔融黏度為1000Pa．s~3000Pa．s。 The manufacturing method of the semiconductor device of the present invention includes: a first wire bonding step, electrically connecting the first semiconductor element to the substrate via the first wire; a pressing step, pressing the second semiconductor element to the substrate via a thermosetting adhesive; and a heating and pressurizing step, heating the adhesive after the pressing step in a pressurized environment to cure the adhesive. By the heating and pressurizing step, at least a portion of the first wire and at least one of the first semiconductor element are buried in the cured adhesive. In the manufacturing method of the semiconductor device, the melt viscosity of the adhesive before curing is 1000Pa.s~3000Pa.s at 120°C.

本發明者等人獲得如下發現：為了藉由在加壓環境下加熱的熱硬化性接著劑來達成優異的埋入性，並且高度抑制經由該接著劑所積層的半導體元件的位置偏移，有用的是在加壓環境下加熱的過程中，接著劑不會過硬，而且不會過軟。並且，以各種溫度條件及接著劑的組成反覆進行評價試驗，結果發現，接著劑的120℃下的熔融黏度反映出在加壓環境下加熱時的接著劑的流動性，進而，於其特定的範圍(1000Pa．s~3000Pa．s)可達成優 異的埋入性，且可高度抑制半導體元件的位置偏移，從而完成所述發明。因此，可獲得顯示出良好的連接可靠性的半導體裝置。 The inventors and others have found that in order to achieve excellent embedding properties by using a thermosetting adhesive heated in a pressurized environment and to highly suppress the positional shift of semiconductor components deposited by the adhesive, it is useful that the adhesive is neither too hard nor too soft during the heating process in a pressurized environment. Furthermore, evaluation tests were repeatedly conducted under various temperature conditions and adhesive compositions, and it was found that the melt viscosity of the adhesive at 120°C reflects the fluidity of the adhesive when heated in a pressurized environment, and further, excellent embedding properties can be achieved within a specific range (1000Pa.s~3000Pa.s), and the positional shift of semiconductor components can be highly suppressed, thereby completing the invention. Therefore, a semiconductor device showing good connection reliability can be obtained.

於所述半導體裝置的製造方法的所述加熱加壓步驟中，較佳為對所述接著劑，於0.1MPa~1.0MPa的加壓環境下，以60℃~175℃加熱5分鐘以上。藉由於所述條件下進行加熱加壓，而更容易獲得埋入性。 In the heating and pressurizing step of the semiconductor device manufacturing method, it is preferred to heat the adhesive at 60°C to 175°C for more than 5 minutes in a pressurized environment of 0.1MPa to 1.0MPa. By heating and pressurizing under the above conditions, embedding properties can be more easily obtained.

所述半導體裝置的製造方法亦可包括：於所述加熱加壓步驟後，於所述第二半導體元件上進而積層第三半導體元件的步驟。該情況下，可增加所獲得的半導體裝置的容量。 The manufacturing method of the semiconductor device may also include: after the heating and pressurizing step, further laminating a third semiconductor element on the second semiconductor element. In this case, the capacity of the obtained semiconductor device can be increased.

所述半導體裝置的製造方法亦可更包括：第二打線接合步驟，經由第二導線而將所述基板與所述第二半導體元件電性連接；以及利用樹脂來密封所述第二半導體元件的步驟。該情況下，所獲得的半導體裝置的可靠性進一步提高。 The manufacturing method of the semiconductor device may also further include: a second wire bonding step, electrically connecting the substrate to the second semiconductor element via a second wire; and a step of sealing the second semiconductor element with a resin. In this case, the reliability of the obtained semiconductor device is further improved.

另外，本發明的接著劑可用於半導體裝置的製造製程中。所述製造製程包括以下步驟：經過在加壓環境下對所述接著劑進行加熱的硬化處理而呈如下狀態，即，將基板上的導線的至少一部分及半導體元件的至少一者埋入硬化處理後的所述接著劑中。所述接著劑的120℃下的熔融黏度為1000Pa．s~3000Pa．s。 In addition, the adhesive of the present invention can be used in the manufacturing process of semiconductor devices. The manufacturing process includes the following steps: the adhesive is hardened by heating in a pressurized environment to form the following state, that is, at least a part of the wire on the substrate and at least one of the semiconductor elements are buried in the adhesive after hardening. The melt viscosity of the adhesive at 120°C is 1000Pa.s~3000Pa.s.

所述接著劑於在加壓環境下加熱的過程中不會過硬，而且不會過軟，因此於半導體裝置的製造中的加熱加壓步驟中，可顯現良好的埋入性並且抑制半導體元件發生位置偏移。因此，可獲得顯示出良好的連接可靠性的半導體裝置。 The adhesive will not become too hard or too soft during the heating process in a pressurized environment, so it can exhibit good embedding properties and suppress positional shifting of semiconductor components during the heating and pressurizing steps in the manufacture of semiconductor devices. Therefore, a semiconductor device with good connection reliability can be obtained.

所述接著劑的與塗佈有阻焊油墨的所述基板的硬化後的接著力較佳為1.0MPa以上。該情況下，所獲得的半導體裝置的連接可靠性更良好。 The bonding strength of the adhesive to the substrate coated with solder resist ink after curing is preferably 1.0 MPa or more. In this case, the connection reliability of the obtained semiconductor device is better.

根據本發明，可提供一種於藉由加壓環境下的加熱來實施接著劑的硬化處理的情況下，導線等的埋入性亦優異，且能夠抑制半導體元件發生位置偏移的半導體裝置的製造方法及其中可使用的接著劑。 According to the present invention, a method for manufacturing a semiconductor device and an adhesive that can be used therein can be provided, which can provide excellent embedding properties of wires, etc., and can suppress positional shifting of semiconductor elements when the adhesive is hardened by heating in a pressurized environment.

10:膜狀接著劑 10: Film adhesive

14:基板 14: Substrate

20、40:基材膜 20, 40: Base film

30:覆蓋膜 30: Covering film

41:接著劑 41: Follow-up agent

42:密封材(樹脂) 42: Sealing material (resin)

50:黏著劑層 50: Adhesive layer

60:切割帶 60: Cutting belt

84、94:電路圖案 84, 94: Circuit diagram

88:第一導線 88: First conductor

90:有機基板 90: Organic substrate

98:第二導線 98: Second wire

100、110、120、130:接著片 100, 110, 120, 130: Next film

102:帶有膜狀接著劑的半導體元件 102: Semiconductor component with film adhesive

200:半導體裝置 200:Semiconductor devices

Wa:第一半導體元件 Wa: First semiconductor element

Waa:第二半導體元件 Waa: Second semiconductor element

圖1是表示本發明的一實施形態的半導體裝置的製造方法的剖面圖。 FIG1 is a cross-sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

圖2是表示圖1的後續步驟的圖。 Figure 2 is a diagram showing the subsequent steps of Figure 1.

圖3是表示圖2的後續步驟的圖。 FIG3 is a diagram showing the subsequent steps of FIG2.

圖4是表示圖3的後續步驟的圖。 FIG4 is a diagram showing the subsequent steps of FIG3.

圖5是表示圖4的後續步驟的圖。 FIG5 is a diagram showing the subsequent steps of FIG4.

圖6是表示圖5的後續步驟的圖。 FIG6 is a diagram showing the subsequent steps of FIG5.

圖7是表示本發明的一實施形態的接著劑的剖面圖。 FIG7 is a cross-sectional view showing an adhesive according to an embodiment of the present invention.

圖8是表示使用本發明的一實施形態的接著劑而獲得的接著片的一例的剖面圖。 FIG8 is a cross-sectional view showing an example of an adhesive sheet obtained using an adhesive according to an embodiment of the present invention.

圖9是表示使用本發明的一實施形態的接著劑而獲得的接著片的另一例的剖面圖。 FIG9 is a cross-sectional view showing another example of an adhesive sheet obtained using an adhesive according to an embodiment of the present invention.

圖10是表示使用本發明的一實施形態的接著劑而獲得的接著片的又一例的剖面圖。 FIG. 10 is a cross-sectional view showing another example of an adhesive sheet obtained using an adhesive according to an embodiment of the present invention.

圖11是表示使用本發明的一實施形態的接著劑而獲得的接著片的又一例的剖面圖。 FIG11 is a cross-sectional view showing another example of an adhesive sheet obtained using an adhesive according to an embodiment of the present invention.

以下，參照圖式來對本發明的較佳實施形態進行詳細說明。於以下的說明中，對相同或相當部分標註相同符號，並省略重複的說明。另外，上下左右等位置關係只要無特別說明，則是指基於圖式所示的位置關係者。進而，圖式的尺寸比率並不限於圖示的比率。再者，所謂本說明書中的「(甲基)丙烯酸」是指「丙烯酸」及與其相對應的「甲基丙烯酸」。 Hereinafter, the preferred embodiment of the present invention will be described in detail with reference to the drawings. In the following description, the same symbols are used for the same or equivalent parts, and repeated descriptions are omitted. In addition, unless otherwise specified, the positional relationships such as up, down, left, and right refer to the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to the ratios shown in the drawings. Furthermore, the so-called "(meth)acrylic acid" in this specification refers to "acrylic acid" and its corresponding "methacrylic acid".

(半導體裝置的製造方法) (Method for manufacturing semiconductor device)

以下，對本實施形態的半導體裝置的製造方法進行說明。首先，如圖1所示，於基板14上的電路圖案94上壓接帶有接著劑41的第一半導體元件Wa，且經由第一導線88而將基板14上的電路圖案84與第一半導體元件Wa電性接合連接(第一打線接合步驟)。 The following is a description of the manufacturing method of the semiconductor device of this embodiment. First, as shown in FIG. 1 , a first semiconductor element Wa with a bonding agent 41 is pressed onto a circuit pattern 94 on a substrate 14, and the circuit pattern 84 on the substrate 14 is electrically connected to the first semiconductor element Wa via a first wire 88 (first wire bonding step).

其次，獲得圖2所示的帶有膜狀接著劑的半導體元件。首先，準備接著片，所述接著片於基材膜上積層有具有熱硬化性的膜狀接著劑10。關於膜狀接著劑10及接著片的製造方法，將於下文敘述。於半導體晶圓的單面上層壓接著片，並剝去基材膜，藉此而於半導體晶圓的單面貼附膜狀接著劑10。半導體晶圓的厚 度例如為50μm，尺寸例如為8吋，膜狀接著劑10的厚度例如為135μm。並且，於將切割帶60貼合於膜狀接著劑10後，切割為7.5mm見方，藉此而如圖2所示，獲得包括第二半導體元件Waa、及貼附於其上的膜狀接著劑10的帶有膜狀接著劑的半導體元件102(層壓步驟)。 Next, a semiconductor element with a film adhesive as shown in FIG2 is obtained. First, a bonding sheet is prepared, wherein a film adhesive 10 having thermosetting properties is laminated on a base film. The film adhesive 10 and the bonding sheet manufacturing method will be described below. The bonding sheet is laminated on one side of a semiconductor wafer, and the base film is peeled off, thereby attaching the film adhesive 10 to one side of the semiconductor wafer. The thickness of the semiconductor wafer is, for example, 50 μm, the size is, for example, 8 inches, and the thickness of the film adhesive 10 is, for example, 135 μm. Furthermore, after the dicing tape 60 is attached to the film adhesive 10, it is cut into 7.5 mm squares, thereby obtaining a semiconductor element 102 with a film adhesive including a second semiconductor element Waa and the film adhesive 10 attached thereto (lamination step) as shown in FIG. 2 .

層壓步驟較佳為於50℃~100℃下進行，更佳為於60℃~80℃下進行。若層壓步驟的溫度為50℃以上，則可獲得與半導體晶圓良好的密接性。若層壓步驟的溫度為100℃以下，則可抑制膜狀接著劑10於層壓步驟中過度流動，因而可防止引起厚度的變化等。 The lamination step is preferably performed at 50°C to 100°C, more preferably at 60°C to 80°C. If the temperature of the lamination step is above 50°C, good adhesion to the semiconductor wafer can be obtained. If the temperature of the lamination step is below 100°C, the film adhesive 10 can be inhibited from excessively flowing during the lamination step, thereby preventing changes in thickness, etc.

作為切割方法，例如可列舉：使用旋轉刀刃的方法(刀片切割)、藉由雷射而將膜狀接著劑或晶圓與膜狀接著劑兩者切斷的方法、以及常溫或冷卻條件下的伸展等通用的方法等。 As the cutting method, for example, there are methods using a rotating blade (blade cutting), methods using a laser to cut a film adhesive or a wafer and a film adhesive, and general methods such as stretching at room temperature or under cooling conditions.

並且，以膜狀接著劑10側朝向基板14的方式，將帶有接著膜的半導體元件102壓接於基板14，該基板14經由第一導線88而接合連接有第一半導體元件Wa。具體而言，如圖3所示，以膜狀接著劑10覆蓋第一半導體元件Wa的方式載置帶有膜狀接著劑的半導體元件102，繼而，如圖4所示，藉由使第二半導體元件Waa與膜狀接著劑10一併壓接於基板14而將第二半導體元件Waa固定於基板14(壓接步驟)。壓接步驟中較佳為將膜狀接著劑10於80℃~180℃、0.01MPa~0.50MPa的條件下壓接0.5秒~3.0秒。 Furthermore, the semiconductor element 102 with the adhesive film is pressed onto the substrate 14 in such a manner that the film-like adhesive 10 side faces the substrate 14, and the substrate 14 is connected to the first semiconductor element Wa via the first wire 88. Specifically, as shown in FIG3 , the semiconductor element 102 with the adhesive film is placed in such a manner that the film-like adhesive 10 covers the first semiconductor element Wa, and then, as shown in FIG4 , the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa together with the film-like adhesive 10 (pressing step). In the pressing step, it is preferred to press the film adhesive 10 at 80°C to 180°C and 0.01MPa to 0.50MPa for 0.5 seconds to 3.0 seconds.

於壓接步驟之後，將膜狀接著劑10於加壓環境下加熱(加熱加壓步驟)。如圖4所示，第二半導體元件Waa具有較第一半導體元件Wa更大的面積，膜狀接著劑10不僅將基板14上的第一導線88埋入，亦將第一半導體元件Wa埋入。本實施形態的半導體裝置的製造方法包括所述加熱加壓步驟，藉此而能夠亦將通常較導線更厚、埋入困難的半導體元件埋入。其原因在於，當於壓接步驟中暫時殘存有半導體元件與基板的接著面的空隙時，亦可藉由經過加熱加壓步驟而更確實地消除或減少空隙。進而，本實施形態中所使用的膜狀接著劑10於120℃下具有3000Pa．s以下、較佳為2500Pa．s以下的熔融黏度。藉此，於所述壓接步驟中可獲得良好的埋入性，於暫時殘存有空隙的情況下，於加熱加壓步驟中亦容易良好地消除或減少。另一方面，本實施形態中所使用的膜狀接著劑10於120℃下具有1000Pa．s以上的熔融黏度。藉此，可抑制於加熱加壓步驟中半導體元件發生位置偏移。 After the crimping step, the film adhesive 10 is heated in a pressurized environment (heating and pressurizing step). As shown in FIG. 4 , the second semiconductor element Waa has a larger area than the first semiconductor element Wa, and the film adhesive 10 not only buries the first wire 88 on the substrate 14, but also buries the first semiconductor element Wa. The manufacturing method of the semiconductor device of this embodiment includes the heating and pressurizing step, thereby making it possible to bury semiconductor elements that are generally thicker than wires and difficult to bury. The reason is that when a gap temporarily remains between the bonding surface of the semiconductor element and the substrate during the crimping step, the gap can be more reliably eliminated or reduced by the heating and pressurizing step. Furthermore, the film adhesive 10 used in the present embodiment has a melt viscosity of 3000 Pa.s or less, preferably 2500 Pa.s or less at 120°C. Thus, good embedding can be obtained in the crimping step, and if there are temporary gaps, they can be easily eliminated or reduced in the heating and pressurizing step. On the other hand, the film adhesive 10 used in the present embodiment has a melt viscosity of 1000 Pa.s or more at 120°C. Thus, the positional displacement of the semiconductor element can be suppressed in the heating and pressurizing step.

於加熱加壓步驟中，加壓環境下的加熱例如可藉由將製造中的半導體裝置投入加壓烘箱中來進行。加壓烘箱中的加熱溫度例如為60℃~175℃，較佳為80℃~160℃、或100℃~150℃。加壓環境下的壓力例如為0.1MPa~1.0MPa，較佳為0.2MPa~1.0MPa、0.3MPa~1.0MPa、或0.5MPa~1.0MPa。加壓環境下的加熱例如進行5分鐘以上。藉由於所述條件下進行加熱加壓，而更容易獲得埋入性。 In the heating and pressurizing step, heating in a pressurized environment can be performed, for example, by placing the semiconductor device being manufactured in a pressurized oven. The heating temperature in the pressurized oven is, for example, 60°C to 175°C, preferably 80°C to 160°C, or 100°C to 150°C. The pressure in the pressurized environment is, for example, 0.1MPa to 1.0MPa, preferably 0.2MPa to 1.0MPa, 0.3MPa to 1.0MPa, or 0.5MPa to 1.0MPa. Heating in a pressurized environment is performed, for example, for more than 5 minutes. By performing heating and pressurization under the above conditions, embedding properties are more easily obtained.

繼而，如圖5所示，於將基板14與第二半導體元件Waa 經由第二導線98而電性連接後(第二打線接合步驟)，如圖6所示，利用密封材42將電路圖案84、第二導線98及第二半導體元件Waa密封。藉由經過此種步驟而可製造半導體裝置200。 Next, as shown in FIG. 5 , after the substrate 14 and the second semiconductor element Waa are electrically connected via the second wire 98 (second wire bonding step), as shown in FIG. 6 , the circuit pattern 84, the second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42. By going through such steps, a semiconductor device 200 can be manufactured.

藉由本實施形態的製造方法而獲得的半導體裝置200中，將第一半導體元件Wa經由第一導線88而以打線接合方式連接於基板14上，並且於第一半導體元件Wa上，經由膜狀接著劑10而壓接較第一半導體元件Wa的面積更大的第二半導體元件Waa。另外，半導體裝置200中，將第一導線88及第一半導體元件Wa埋入膜狀接著劑10中。即，藉由本實施形態的製造方法而獲得的半導體裝置200為線及半導體元件埋入型的半導體裝置。另外，根據本實施形態的半導體裝置的製造方法，由膜狀接著劑10所實現的埋入性良好，不存在半導體元件的位置偏移，因此可獲得具有良好的連接可靠性的半導體裝置。 In the semiconductor device 200 obtained by the manufacturing method of the present embodiment, the first semiconductor element Wa is connected to the substrate 14 by wire bonding via the first wire 88, and the second semiconductor element Waa having a larger area than the first semiconductor element Wa is press-bonded on the first semiconductor element Wa via the film adhesive 10. In addition, in the semiconductor device 200, the first wire 88 and the first semiconductor element Wa are buried in the film adhesive 10. That is, the semiconductor device 200 obtained by the manufacturing method of the present embodiment is a wire and semiconductor element buried type semiconductor device. In addition, according to the method for manufacturing a semiconductor device of this embodiment, the embedding property achieved by the film adhesive 10 is good, and there is no positional deviation of the semiconductor element, so a semiconductor device with good connection reliability can be obtained.

另外，半導體裝置200中，進而經由第二導線98而將基板14與第二半導體元件Waa電性連接，並且藉由密封材42而將第二半導體元件Waa密封。藉此，所獲得的半導體裝置的可靠性進一步提高。 In addition, in the semiconductor device 200, the substrate 14 is electrically connected to the second semiconductor element Waa via the second wire 98, and the second semiconductor element Waa is sealed by the sealing material 42. Thereby, the reliability of the obtained semiconductor device is further improved.

第一半導體元件Wa的厚度例如為10μm~170μm，第二半導體元件Waa的厚度例如為20μm~400μm。膜狀接著劑10的厚度例如為20μm~200μm，較佳為30μm~200μm，更佳為40μm~150μm。埋入至膜狀接著劑10內部的第一半導體元件Wa為用以驅動半導體裝置200的控制器晶片。 The thickness of the first semiconductor element Wa is, for example, 10μm to 170μm, and the thickness of the second semiconductor element Waa is, for example, 20μm to 400μm. The thickness of the film adhesive 10 is, for example, 20μm to 200μm, preferably 30μm to 200μm, and more preferably 40μm to 150μm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.

基板14包括電路圖案84、電路圖案94分別於表面各形成有兩處的有機基板90。第一半導體元件Wa經由接著劑41而壓接於電路圖案94上，第二半導體元件Waa以覆蓋未壓接有第一半導體元件Wa的電路圖案94、第一半導體元件Wa、及電路圖案84的一部分的方式經由膜狀接著劑10而壓接於基板14。由基板14上的電路圖案84、電路圖案94所引起的凹凸的階差中埋入有膜狀接著劑10。並且，利用樹脂製的密封材42，將第二半導體元件Waa、電路圖案84及第二導線98密封。 The substrate 14 includes an organic substrate 90 with two circuit patterns 84 and 94 formed on the surface. The first semiconductor element Wa is pressed onto the circuit pattern 94 via an adhesive 41, and the second semiconductor element Waa is pressed onto the substrate 14 via a film adhesive 10 in a manner that covers the circuit pattern 94 to which the first semiconductor element Wa is not pressed, the first semiconductor element Wa, and a portion of the circuit pattern 84. The film adhesive 10 is embedded in the uneven steps caused by the circuit patterns 84 and 94 on the substrate 14. In addition, the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed using a resin sealant 42.

(膜狀接著劑) (Film adhesive)

其次，關於本實施形態的接著劑，列舉膜狀接著劑為例來進行說明。膜狀接著劑可用於所述半導體裝置的製造方法中。圖7是示意性表示膜狀接著劑10的剖面圖。膜狀接著劑10為熱硬化性，且可藉由以下方式而製作，即，將經過半硬化(B階段)狀態，而於硬化處理後可呈完全硬化物(C階段)狀態的接著劑組成物成形為膜狀。 Next, regarding the adhesive of this embodiment, a film adhesive is cited as an example for explanation. The film adhesive can be used in the manufacturing method of the semiconductor device. FIG. 7 is a schematic cross-sectional view of the film adhesive 10. The film adhesive 10 is thermosetting and can be manufactured by forming an adhesive composition that is in a semi-cured (B stage) state and can be in a fully cured (C stage) state after a curing treatment into a film shape.

膜狀接著劑10於120℃下具有3000Pa．s以下的熔融黏度。藉此，於壓接半導體元件時可獲得良好的埋入性，可於加壓烘箱中良好地消除或減少空隙。另一方面，膜狀接著劑10於120℃下具有1000Pa．s以上的熔融黏度。藉此，可抑制加壓加熱步驟中的半導體元件的位置偏移的發生。所述熔融黏度的上限值可為2800Pa．s、2500Pa．s、或2200Pa．s。所述熔融黏度的下限值可為1200Pa．s、1500Pa．s、或2000Pa．s。 The film adhesive 10 has a melt viscosity of 3000 Pa.s or less at 120°C. Thus, good embedding properties can be obtained when the semiconductor element is pressed and bonded, and voids can be eliminated or reduced well in the pressurized oven. On the other hand, the film adhesive 10 has a melt viscosity of 1000 Pa.s or more at 120°C. Thus, the positional offset of the semiconductor element in the pressurized heating step can be suppressed. The upper limit of the melt viscosity can be 2800 Pa.s, 2500 Pa.s, or 2200 Pa.s. The lower limit of the melt viscosity can be 1200 Pa.s, 1500 Pa.s, or 2000 Pa.s.

再者，熔融黏度是指下述情況下的測定值：使用先進流變擴展系統(Advanced Rheometric Expansion System，ARES)(TA儀器(TA Instruments)公司製造)，一邊對膜狀接著劑10賦予5%的變形，一邊以5℃/分鐘的升溫速度升溫同時進行測定。 In addition, melt viscosity refers to the measured value under the following circumstances: using the Advanced Rheometric Expansion System (ARES) (manufactured by TA Instruments), the film adhesive 10 is given a 5% deformation and the temperature is raised at a rate of 5°C/min for measurement.

另外，膜狀接著劑10對塗佈有阻焊油墨(例如商品名：AUS308，太陽油墨製造(股)製造)的基板的硬化後的接著力較佳為1.0MPa以上。該情況下，所獲得的半導體裝置的連接可靠性更良好。 In addition, the adhesion of the film adhesive 10 to the substrate coated with solder resist ink (e.g., trade name: AUS308, manufactured by Sun Ink Co., Ltd.) after curing is preferably 1.0 MPa or more. In this case, the connection reliability of the obtained semiconductor device is better.

膜狀接著劑10例如可含有(a)熱硬化性成分、(b)高分子量成分及(c)填料、以及視需要的(d)硬化促進劑及(e)偶合劑。所述熔融黏度的範圍例如可藉由調整(a)熱硬化性成分、(b)高分子量成分、(c)填料的種類及含量等而實現。 The film adhesive 10 may contain, for example, (a) a thermosetting component, (b) a high molecular weight component, and (c) a filler, and optionally, (d) a curing accelerator and (e) a coupling agent. The range of the melt viscosity may be achieved, for example, by adjusting the type and content of (a) a thermosetting component, (b) a high molecular weight component, and (c) a filler.

以膜狀接著劑10的總量為基準，膜狀接著劑10可含有20質量%~60質量%的(a)熱硬化性成分。 Based on the total amount of the film adhesive 10, the film adhesive 10 may contain 20% to 60% by mass of (a) thermosetting components.

(a)熱硬化性成分可為熱硬化性樹脂，可為具有安裝半導體元件時所要求的耐熱性及耐濕性的環氧樹脂及酚樹脂等。 (a) The thermosetting component may be a thermosetting resin, such as an epoxy resin or a phenolic resin having the heat resistance and moisture resistance required for mounting semiconductor components.

作為(a)成分的環氧樹脂，可列舉含芳香環的環氧樹脂、含脂肪族環的環氧樹脂、含雜環的環氧樹脂、及脂肪族線狀環氧樹脂等。(a)成分的環氧樹脂較佳為含芳香環的環氧樹脂。另外，(a)成分的環氧樹脂可為多官能環氧樹脂，亦可為二官能環氧樹脂。 As the epoxy resin of component (a), there can be listed aromatic epoxy resins, aliphatic epoxy resins, heterocyclic epoxy resins, and aliphatic linear epoxy resins. The epoxy resin of component (a) is preferably an aromatic epoxy resin. In addition, the epoxy resin of component (a) may be a polyfunctional epoxy resin or a difunctional epoxy resin.

作為含芳香環的環氧樹脂，可列舉下述通式(1)所表 示的環氧樹脂。式(1)中，n表示0~5的整數。 As an aromatic ring-containing epoxy resin, the epoxy resin represented by the following general formula (1) can be cited. In formula (1), n represents an integer of 0 to 5.

Figure 108106384-A0305-02-0014-1
Figure 108106384-A0305-02-0014-1

作為所述通式(1)以外的(a)成分的含芳香環的環氧樹脂，可使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、及雙酚E型環氧樹脂等，以及使該些改質而得的二官能環氧樹脂等。 As the aromatic ring-containing epoxy resin of the component (a) other than the general formula (1), bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, etc., and difunctional epoxy resins obtained by modifying these resins, etc. can be used.

進而，亦可併用以上所列舉的環氧樹脂以外的環氧樹脂來作為(a)熱硬化性成分。例如，可使用苯酚酚醛清漆型環氧樹脂或甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂、或者縮水甘油胺型環氧樹脂等。 Furthermore, epoxy resins other than the epoxy resins listed above may also be used as (a) the thermosetting component. For example, novolac-type epoxy resins such as phenol novolac-type epoxy resins or cresol novolac-type epoxy resins, or glycidylamine-type epoxy resins may be used.

作為(a)成分的酚樹脂，可使用含脂肪族環的酚樹脂、含雜環的酚樹脂、及脂肪族線狀酚樹脂等。 As the phenolic resin of component (a), aliphatic ring-containing phenolic resins, heterocyclic ring-containing phenolic resins, aliphatic linear phenolic resins, etc. can be used.

作為具體的酚樹脂，可列舉：迪愛生(DIC)(股)製造的芬萊特(Phenolite)KA、TD系列；三井化學股份有限公司製造的米萊斯(Mirex)XLC系列與XL系列(例如米萊斯(Mirex)XLC-LL)等。就耐熱性的觀點而言，酚樹脂可為投入85℃、85%RH的恆溫恆濕槽中48小時後的吸水率為2質量%以下，且利用熱重量分析儀(thermogravimetric analyzer，TGA)測定出的350℃下的加熱質量減少率(升溫速度：5℃/分鐘，環境：氮)小於5質量%者。 Specific examples of phenolic resins include: Phenolite KA and TD series manufactured by DIC Corporation; Mirex XLC series and XL series (e.g. Mirex XLC-LL) manufactured by Mitsui Chemicals Co., Ltd. From the perspective of heat resistance, the phenolic resin may have a water absorption rate of less than 2% by mass after being placed in a constant temperature and humidity tank at 85°C and 85%RH for 48 hours, and a heating mass loss rate (temperature increase rate: 5°C/min, environment: nitrogen) of less than 5% by mass at 350°C as measured by a thermogravimetric analyzer (TGA).

(a)熱硬化性成分可包含：(a1)軟化點為室溫以下或 於室溫下為液體的環氧樹脂及軟化點為室溫以下或室溫下為液體的酚樹脂的至少一者(以下稱為(a1)成分)；以及(a2)軟化點高於室溫的環氧樹脂及軟化點高於室溫的酚樹脂的至少一者(以下稱為(a2)成分)。再者，本說明書中，室溫是指23℃。 (a) Thermosetting components may include: (a1) at least one of an epoxy resin having a softening point below room temperature or being liquid at room temperature and a phenolic resin having a softening point below room temperature or being liquid at room temperature (hereinafter referred to as component (a1)); and (a2) at least one of an epoxy resin having a softening point higher than room temperature and a phenolic resin having a softening point higher than room temperature (hereinafter referred to as component (a2)). In addition, in this specification, room temperature refers to 23°C.

作為(a1)成分及(a2)成分的環氧樹脂，可根據軟化點及室溫下的狀態而自所述環氧樹脂中選擇。另外，作為(a1)成分及(a2)成分的酚樹脂，可根據軟化點及室溫下的狀態而自所述酚樹脂中選擇。 The epoxy resins as the components (a1) and (a2) can be selected from the above-mentioned epoxy resins according to the softening point and the state at room temperature. In addition, the phenol resins as the components (a1) and (a2) can be selected from the above-mentioned phenol resins according to the softening point and the state at room temperature.

為了使膜狀接著劑10的120℃下的熔融黏度為1000Pa．s~3000Pa．s，例如亦可藉由調整(a1)成分及(a2)成分的含量來實現。 In order to make the melt viscosity of the film adhesive 10 at 120°C be 1000Pa.s~3000Pa.s, for example, this can be achieved by adjusting the content of components (a1) and (a2).

於膜狀接著劑10包含環氧樹脂及酚樹脂兩者來作為(a)熱硬化性成分的情況下，環氧樹脂及酚樹脂較佳為以環氧基的數量相對於羥基的數量的比成為0.70/0.30~0.30/0.70的方式進行調配，更佳為以成為0.65/0.35~0.35/0.65的方式進行調配，進而佳為以成為0.60/0.40~0.40/0.60的方式進行調配，特佳為以成為0.60/0.40~0.50/0.50的方式進行調配。膜狀接著劑10中的環氧基的數量可作為所使用的環氧樹脂除以環氧當量所得的值而求出，羥基的數量可作為所使用的酚樹脂除以羥基當量所得的值而求出。藉由以處於所述範圍的方式進行調配，則所製作的膜狀接著劑容易具有硬化性，且抑制未硬化狀態下的膜狀接著劑的黏度變高，從而容易提升流動性。 When the film adhesive 10 contains both an epoxy resin and a phenol resin as (a) the thermosetting component, the epoxy resin and the phenol resin are preferably formulated so that the ratio of the number of epoxy groups to the number of hydroxyl groups is 0.70/0.30 to 0.30/0.70, more preferably 0.65/0.35 to 0.35/0.65, further preferably 0.60/0.40 to 0.40/0.60, and particularly preferably 0.60/0.40 to 0.50/0.50. The number of epoxy groups in the film adhesive 10 can be obtained as the value obtained by dividing the epoxy resin used by the epoxy equivalent, and the number of hydroxyl groups can be obtained as the value obtained by dividing the phenol resin used by the hydroxyl equivalent. By preparing in such a manner as to be within the above range, the prepared film adhesive is easy to have curing properties, and the viscosity of the film adhesive in the uncured state is suppressed from increasing, thereby easily improving fluidity.

另外，為了使與塗佈有阻焊油墨的基板的硬化後的接著力為1.0MPa以上，例如可藉由減少(a2)成分的含量、增加(c)填料的含量、增加(d)硬化促進劑來進行調整。 In addition, in order to make the adhesion strength after curing with the substrate coated with solder resist ink to be above 1.0 MPa, it can be adjusted by, for example, reducing the content of component (a2), increasing the content of filler (c), and increasing the content of curing accelerator (d).

以膜狀接著劑10的總量為基準，膜狀接著劑10可含有10質量%~40質量%的(b)高分子量成分。若(b)高分子量成分的含量為40質量%以下，則有晶粒安裝(die attach)時的熔融性提升，埋入性提升的傾向。另一方面，若(b)高分子量成分的含量為10質量%以上，則容易獲得成膜性。 Based on the total amount of the film adhesive 10, the film adhesive 10 may contain 10% to 40% by mass of the (b) high molecular weight component. If the content of the (b) high molecular weight component is 40% by mass or less, the meltability during die attach is improved and the embedding property tends to be improved. On the other hand, if the content of the (b) high molecular weight component is 10% by mass or more, film forming properties are easily obtained.

(b)高分子量成分可為丙烯酸系樹脂，進而亦可為將丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等具有環氧基或縮水甘油基作為交聯性官能基的官能性單體聚合而獲得，且具有-50℃~50℃的玻璃轉移溫度(Tg)的含環氧基的(甲基)丙烯酸酯共聚物等丙烯酸系樹脂。 (b) The high molecular weight component may be an acrylic resin, and further may be an acrylic resin such as an epoxy group-containing (meth)acrylate copolymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a cross-linking functional group such as glycidyl acrylate or glycidyl methacrylate, and having a glass transition temperature (Tg) of -50°C to 50°C.

作為此種樹脂，可使用含環氧基的(甲基)丙烯酸酯共聚物、及含環氧基的丙烯酸橡膠等，(b)成分亦可為含環氧基的丙烯酸橡膠。含環氧基的丙烯酸橡膠是將丙烯酸酯作為主成分，且主要包含丙烯酸丁酯與丙烯腈等的共聚物、及丙烯酸乙酯與丙烯腈等的共聚物等的具有環氧基的橡膠。 As such resins, epoxy-containing (meth)acrylate copolymers and epoxy-containing acrylic rubbers can be used, and component (b) can also be epoxy-containing acrylic rubbers. Epoxy-containing acrylic rubbers are rubbers with epoxy groups that use acrylate as a main component and mainly include copolymers of butyl acrylate and acrylonitrile, and copolymers of ethyl acrylate and acrylonitrile.

(b)高分子量成分的重量平均分子量可為30萬以上，亦可為50萬以上。另外，(b)高分子量成分的重量平均分子量可為100萬以下，亦可為80萬以下。若(b)高分子量成分的重量平均分子量為30萬以上，則有成膜性提升的傾向。若(b)高分 子量成分的重量平均分子量為100萬以下，則可降低未硬化膜狀接著劑的剪切黏度，因而埋入性更良好。另外，存在未硬化膜狀接著劑的切削性得到改善，切割的品質變良好的情況。 The weight average molecular weight of the (b) high molecular weight component may be 300,000 or more, or 500,000 or more. In addition, the weight average molecular weight of the (b) high molecular weight component may be 1,000,000 or less, or 800,000 or less. If the weight average molecular weight of the (b) high molecular weight component is 300,000 or more, the film-forming property tends to be improved. If the weight average molecular weight of the (b) high molecular weight component is 1,000,000 or less, the shear viscosity of the uncured film adhesive can be reduced, thereby improving the embedding property. In addition, there is a case where the machinability of the uncured film adhesive is improved, and the cutting quality becomes better.

(b)高分子量成分的玻璃轉移溫度(Tg)可為-50℃~50℃。若(b)高分子量成分的玻璃轉移溫度(Tg)為50℃以下，則膜狀接著劑10的柔軟性變良好。另一方面，若玻璃轉移溫度(Tg)為-50℃以上，則膜狀接著劑的柔軟性不會過高，因而在切割半導體晶圓時容易將膜狀接著劑10切斷。因此，可抑制因毛刺的產生而導致切割性惡化。 The glass transition temperature (Tg) of the (b) high molecular weight component can be -50°C to 50°C. If the glass transition temperature (Tg) of the (b) high molecular weight component is 50°C or less, the flexibility of the film adhesive 10 becomes good. On the other hand, if the glass transition temperature (Tg) is -50°C or more, the flexibility of the film adhesive will not be too high, so the film adhesive 10 can be easily cut when cutting the semiconductor wafer. Therefore, the deterioration of cutting performance due to the generation of burrs can be suppressed.

(b)高分子量成分的玻璃轉移溫度(Tg)可為-20℃~40℃，亦可為-10℃~30℃。該情況下，可顯現出：切割時容易將膜狀接著劑切斷而不易產生樹脂碎屑的方面、接著力與耐熱性高的方面、以及未硬化膜狀接著劑的高流動性。 (b) The glass transition temperature (Tg) of the high molecular weight component can be -20℃~40℃, or -10℃~30℃. In this case, the following aspects can be shown: the film adhesive is easy to cut during cutting without generating resin debris, the adhesive strength and heat resistance are high, and the uncured film adhesive has high fluidity.

為了顯現出高接著力，以總結構單元數為基準，(b)高分子量成分可含有1%~15%的具有交聯性官能基的結構單元。具有交聯性官能基的結構單元亦可認為是合成(b)高分子量成分時所使用的總材料單體數(莫耳數)中的官能性單體的數量。作為官能性單體，可列舉丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯等，(b)高分子量成分所具有的交聯性官能基源自官能性單體的官能基。於官能性單體為丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯的情況下，交聯性官能基為環氧基。 In order to show high adhesion, the (b) high molecular weight component may contain 1% to 15% of structural units with cross-linking functional groups based on the total number of structural units. The structural unit with cross-linking functional groups can also be considered as the number of functional monomers in the total number of material monomers (molar number) used when synthesizing the (b) high molecular weight component. As functional monomers, glycidyl acrylate or glycidyl methacrylate can be listed, and the cross-linking functional groups possessed by the (b) high molecular weight component are derived from the functional groups of the functional monomers. When the functional monomer is glycidyl acrylate or glycidyl methacrylate, the cross-linking functional group is an epoxy group.

再者，作為(b)高分子量成分的交聯性官能基，不僅 可列舉環氧基，亦可列舉醇性或酚性羥基、或者羧基等交聯性官能基。 Furthermore, as the cross-linking functional group of the (b) high molecular weight component, not only epoxy groups but also alcoholic or phenolic hydroxyl groups, or cross-linking functional groups such as carboxyl groups can be listed.

重量平均分子量是利用凝膠滲透層析法(Gel Penetration Chromatography，GPC)且使用基於標準聚苯乙烯的校準曲線而得的聚苯乙烯換算值。玻璃轉移溫度(Tg)是指使用示差掃描熱量儀(Differential Scanning Calorimeter，DSC)(例如理學(股)製造的「Thermo Plus 2」)所測定出的值。 The weight average molecular weight is a polystyrene-converted value obtained by gel penetration chromatography (GPC) using a calibration curve based on standard polystyrene. The glass transition temperature (Tg) refers to a value measured using a differential scanning calorimeter (DSC) (e.g., "Thermo Plus 2" manufactured by Rigaku Co., Ltd.).

本發明中所使用的(b)高分子量成分亦能夠作為市售品來獲取。例如，可列舉長瀨化成(Nagase ChemteX)(股)製造的商品名「丙烯酸橡膠HTR-860P-3CSP」等。 The (b) high molecular weight component used in the present invention can also be obtained as a commercial product. For example, the product name "Acrylic Rubber HTR-860P-3CSP" manufactured by Nagase ChemteX Co., Ltd. can be cited.

就控制未硬化的膜狀接著劑的流動性與斷裂性、硬化後膜狀接著劑的拉伸彈性係數與接著力的觀點而言，以膜狀接著劑10的總量為基準，膜狀接著劑10可含有20質量%~50質量%的(c)填料。若(c)填料的含量為20質量%以上，則有未硬化膜狀接著劑的切割性改善，硬化後的接著力提升的傾向。另一方面，若(c)填料的含量為50質量%以下，則有未硬化膜狀接著劑的流動性提升，晶粒安裝時的埋入性改善的傾向。 From the viewpoint of controlling the fluidity and fracture properties of the uncured film adhesive, and the tensile modulus and bonding strength of the cured film adhesive, the film adhesive 10 may contain 20% to 50% by mass of the (c) filler based on the total amount of the film adhesive 10. If the content of the (c) filler is 20% by mass or more, the cutting properties of the uncured film adhesive are improved, and the bonding strength after curing tends to be improved. On the other hand, if the content of the (c) filler is 50% by mass or less, the fluidity of the uncured film adhesive is improved, and the embedding properties during die mounting tend to be improved.

就膜狀接著劑10的流動性的觀點而言，(c)填料的平均粒徑可為0.1μm以上，亦可為0.1μm~5.0μm。此處，所謂「平均粒徑」，設為藉由雷射繞射式粒度分佈測定裝置，將丙酮作為溶劑進行分析時所獲得的值。 From the perspective of the fluidity of the film adhesive 10, the average particle size of the filler (c) may be greater than 0.1 μm, or may be 0.1 μm to 5.0 μm. Here, the so-called "average particle size" is the value obtained by analyzing acetone as a solvent using a laser diffraction particle size distribution measuring device.

就B階段狀態下的膜狀接著劑的切割性的提升、膜狀接 著劑的操作性的提升、導熱性的提升、熔融黏度的調整、觸變性的賦予、及接著力的提升等觀點而言，(c)填料可為無機填料，亦可為二氧化矽填料。 From the perspectives of improving the cutting properties of the film adhesive in the B-stage state, improving the operability of the film adhesive, improving thermal conductivity, adjusting melt viscosity, imparting thixotropic properties, and improving bonding strength, the (c) filler can be an inorganic filler or a silica filler.

另外，以獲得良好的硬化性為目的，膜狀接著劑10亦可含有(d)硬化促進劑。關於膜狀接著劑10含有(d)硬化促進劑時的(d)硬化促進劑的含量，以膜狀接著劑10的總量為基準，可為0.01質量%~0.2質量%。 In addition, in order to obtain good curability, the film adhesive 10 may also contain (d) a curing accelerator. When the film adhesive 10 contains (d) a curing accelerator, the content of the (d) curing accelerator may be 0.01 mass % to 0.2 mass % based on the total amount of the film adhesive 10.

再者，就反應性的觀點而言，(d)硬化促進劑較佳為咪唑系的化合物。反應性過高的硬化促進劑有藉由膜狀接著劑的製造步驟中的加熱，不僅使剪切黏度上升，亦顯著引起經時的劣化的傾向。另一方面，關於反應性過低的硬化促進劑，於半導體裝置的製造步驟內的熱歷程中膜狀接著劑難以完全硬化，而以未硬化的狀態搭載於製品內，無法獲得充分的接著性，從而有可能使半導體裝置的連接可靠性惡化。 Furthermore, from the perspective of reactivity, (d) the curing accelerator is preferably an imidazole compound. A curing accelerator with excessive reactivity not only increases the shear viscosity by heating in the manufacturing step of the film adhesive, but also tends to significantly deteriorate over time. On the other hand, with regard to a curing accelerator with excessively low reactivity, the film adhesive is difficult to completely cure during the thermal process in the manufacturing step of the semiconductor device, and is loaded in the product in an uncured state, and sufficient adhesion cannot be obtained, which may deteriorate the connection reliability of the semiconductor device.

就提升接著性的觀點而言，除所述(a)成分~(d)成分以外，本實施形態的接著劑組成物亦可含有(e)偶合劑。作為偶合劑，可列舉：γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、及3-(2-胺基乙基)胺基丙基三甲氧基矽烷等。 From the perspective of improving adhesion, in addition to the above-mentioned components (a) to (d), the adhesive composition of this embodiment may also contain (e) a coupling agent. Examples of the coupling agent include: γ-ureidopropyltriethoxysilane, γ-butylpropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

(膜狀接著劑及接著片) (Film adhesive and adhesive sheet)

關於膜狀接著劑10，可將於基材膜上塗佈以上所述的接著劑組成物的清漆並加以乾燥而得的接著劑組成物用作接著片。具體 而言，首先，將(a)成分~(c)成分與視需要的所述(d)硬化促進劑或(e)偶合劑等其他添加成分於有機溶劑中混合、混煉而製備清漆。 Regarding the film adhesive 10, the adhesive composition obtained by coating the varnish of the adhesive composition described above on a base film and drying it can be used as an adhesive sheet. Specifically, first, the components (a) to (c) and other additives such as the (d) curing accelerator or (e) coupling agent as required are mixed and kneaded in an organic solvent to prepare a varnish.

所述混合、混煉可使用通常的攪拌機、擂潰機、三輥磨機(three-rod roll mill)及球磨機(ball mill)等分散機，將該些適當組合而進行。所述乾燥只要為所使用的溶劑充分揮發的條件則並無特別限制，通常可於60℃~200℃下加熱0.1分鐘~90分鐘來進行。 The mixing and kneading can be carried out using a common mixer, pestle, three-roll mill, ball mill and other dispersers, and these can be appropriately combined. The drying is not particularly limited as long as the solvent used is fully volatilized. It can usually be carried out by heating at 60℃~200℃ for 0.1 minute to 90 minutes.

用於製作所述清漆的有機溶劑只要為可將所述各成分均勻地溶解、混煉或分散者則可無限制地使用現有公知者。作為此種溶劑，例如可列舉：丙酮、甲基乙基酮、甲基異丁基酮、及環己酮等酮系溶劑；二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、以及二甲苯等。就乾燥速度快、價格低的方面而言，較佳為使用甲基乙基酮、環己酮等。 As the organic solvent used to prepare the varnish, any known organic solvent can be used without limitation as long as it can dissolve, mix or disperse the components uniformly. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. In terms of fast drying speed and low price, methyl ethyl ketone, cyclohexanone, etc. are preferably used.

所述基材膜並無特別限制，例如可列舉：聚酯膜、聚丙烯膜(定向聚丙烯(Oriented Polypropylene，OPP)膜等)、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯膜、及甲基戊烯膜等。 The substrate film is not particularly limited, and examples thereof include polyester film, polypropylene film (oriented polypropylene (OPP) film, etc.), polyethylene terephthalate film, polyimide film, polyetherimide film, polyether naphthalate film, and methylpentene film, etc.

其次，藉由將所獲得的清漆塗佈於基材膜上而形成清漆的層。其次，藉由加熱乾燥而將溶劑自清漆層去除，從而獲得接著片。其後，將基材膜自接著片去除，藉此而可獲得膜狀接著劑10。 Next, the obtained varnish is applied to a substrate film to form a varnish layer. Next, the solvent is removed from the varnish layer by heat drying to obtain an adhesive sheet. Thereafter, the substrate film is removed from the adhesive sheet to obtain a film-like adhesive 10.

作為製造厚膜的膜狀接著劑10的方法之一，可列舉將預先獲得的膜狀接著劑10與基材膜上所形成的膜狀接著劑10(接著片)貼合來進行製造的方法。 As one of the methods for manufacturing a thick film adhesive 10, there is a method of manufacturing by bonding a pre-obtained film adhesive 10 to a film adhesive 10 (adhesive sheet) formed on a base film.

為了能夠充分填充第一半導體元件及半導體元件連接用的線、以及基板的配線電路等的凹凸，膜狀接著劑10的膜厚較佳為20μm~200μm。若膜厚為20μm以上，則有可抑制接著力的下降的傾向，若為200μm以下，則具有經濟性，此外可滿足半導體裝置的小型化的要求。本實施形態中，利用膜狀接著劑10將半導體元件埋入，因此膜狀接著劑10的膜厚更佳為50μm~200μm，進而佳為80μm~200μm，特佳為100μm~200μm。 In order to fully fill the first semiconductor element and the wires used to connect the semiconductor element, as well as the unevenness of the wiring circuit of the substrate, the film thickness of the film adhesive 10 is preferably 20μm~200μm. If the film thickness is 20μm or more, there is a tendency to suppress the decrease in bonding force, and if it is less than 200μm, it is economical and can meet the requirements of miniaturization of semiconductor devices. In this embodiment, the semiconductor element is buried using the film adhesive 10, so the film thickness of the film adhesive 10 is more preferably 50μm~200μm, further preferably 80μm~200μm, and particularly preferably 100μm~200μm.

如圖8所示，膜狀接著劑10可以如下的接著片100的形式來使用，所述接著片100是並不去除塗佈有清漆的基材膜而維持該狀態，並於基材膜20上積層膜狀接著劑10而成。 As shown in FIG. 8 , the film adhesive 10 can be used in the form of an adhesive sheet 100 in which the film adhesive 10 is deposited on the base film 20 without removing the base film coated with varnish and maintaining the state.

另外，如圖9所示，膜狀接著劑亦可以如下的接著片110的形式來使用，所述接著片110是在與設置有基材膜20的面為相反側的面設置覆蓋膜30而成。作為覆蓋膜30，例如可列舉聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)膜、聚乙烯(polyethylene，PE)膜、及OPP膜等。 In addition, as shown in FIG. 9 , the film adhesive can also be used in the form of an adhesive sheet 110 in which a covering film 30 is provided on the surface opposite to the surface on which the base film 20 is provided. Examples of the covering film 30 include polyethylene terephthalate (PET) film, polyethylene (PE) film, and OPP film.

另外，膜狀接著劑亦可以將膜狀接著劑10積層於切割帶上的切割．黏晶一體型接著片的形式來使用。該情況下，半導體晶圓上的層壓步驟進行一次即可，就該方面而言能夠實現作業的效率化。 In addition, the film adhesive can also be used in the form of a dicing and die bonding integrated adhesive sheet by laminating the film adhesive 10 on the dicing tape. In this case, the lamination step on the semiconductor wafer only needs to be performed once, which can improve the efficiency of the operation in this respect.

作為切割帶，例如可列舉：聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、及聚醯亞胺膜等塑膠膜等。另外，亦可視需要而對切割帶進行底漆塗佈、UV處理、電暈放電處理、研磨處理、及蝕刻處理等表面處理。 Examples of dicing tapes include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. In addition, the dicing tape may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, grinding treatment, and etching treatment as needed.

進而，切割帶可為具有黏著性者，亦可為對所述塑膠膜賦予了黏著性者。另外，亦可於所述塑膠膜的單面設置黏著劑層。 Furthermore, the dicing tape may be adhesive or may be one that imparts adhesiveness to the plastic film. In addition, an adhesive layer may be provided on one side of the plastic film.

作為此種切割．黏晶一體型接著片，可列舉圖10所示的接著片120及圖11所示的接著片130等。如圖10所示，接著片120具有如下結構：將於可確保施加有拉伸張力時的伸長率的基材膜40上設置有黏著劑層50的切割帶60作為支撐基材，且於切割帶60的黏著劑層50上設置有膜狀接著劑10。如圖11所示，接著片130於接著片120中，於膜狀接著劑10的表面設置有基材膜20。 As such a cutting and bonding integrated bonding sheet, bonding sheet 120 shown in FIG. 10 and bonding sheet 130 shown in FIG. 11 can be cited. As shown in FIG. 10, bonding sheet 120 has the following structure: a dicing tape 60 having an adhesive layer 50 provided on a base film 40 that can ensure the elongation when a tensile force is applied is used as a supporting base material, and a film-like adhesive 10 is provided on the adhesive layer 50 of the dicing tape 60. As shown in FIG. 11, bonding sheet 130 has a base film 20 provided on the surface of the film-like adhesive 10 in bonding sheet 120.

作為基材膜40，可列舉關於切割帶所記載的所述塑膠膜。另外，作為黏著劑層50，例如可列舉包含液狀成分及高分子量成分且具有適度的黏接強度的樹脂組成物。藉由使將黏著劑層50塗佈於基材膜40上並加以乾燥、或者塗佈於PET膜等基材膜並加以乾燥而得的黏著劑層與基材膜40貼合，而能夠形成切割帶。黏接強度例如可藉由調整液狀成分的比率、高分子量成分的Tg而設定為所需的值。 As the base film 40, the plastic film described in the dicing tape can be cited. In addition, as the adhesive layer 50, for example, a resin composition containing a liquid component and a high molecular weight component and having an appropriate adhesive strength can be cited. The dicing tape can be formed by applying the adhesive layer 50 on the base film 40 and drying it, or applying the adhesive layer on a base film such as a PET film and drying it to the base film 40. The adhesive strength can be set to a desired value by adjusting the ratio of the liquid component and the Tg of the high molecular weight component, for example.

於將接著片120及接著片130等切割．黏晶一體型接著片用於半導體裝置的製造的情況下，需要具有於切割時半導體元件不會飛散的黏著力，且於其後的拾取時可容易地自切割帶剝離。 When the bonding sheet 120 and the bonding sheet 130 are cut and the die-bonded bonding sheet is used in the manufacture of semiconductor devices, it is necessary to have an adhesive force that prevents the semiconductor components from flying during cutting and can be easily peeled off from the cutting tape during subsequent picking.

該特性可藉由如上所述般調整黏著劑層的黏接強度、或利用光反應等來改變黏接強度而獲得，但若膜狀接著劑的黏著性過高，則有時拾取變困難。因此，較佳為適當調節膜狀接著劑10的黏接強度。作為其方法，例如可列舉利用如下情況的方法：若使膜狀接著劑10的室溫(25℃)下的流動上升，則有黏著強度及黏接強度亦上升的傾向；若使流動下降，則有黏著強度及黏接強度亦下降的傾向。 This property can be obtained by adjusting the adhesive strength of the adhesive layer as described above, or by changing the adhesive strength by using light reaction, etc., but if the adhesiveness of the film adhesive is too high, it may be difficult to pick up. Therefore, it is better to appropriately adjust the adhesive strength of the film adhesive 10. As a method for this, for example, a method using the following situation can be cited: if the flow of the film adhesive 10 at room temperature (25°C) is increased, the adhesive strength and the bonding strength tend to increase; if the flow is reduced, the adhesive strength and the bonding strength tend to decrease.

作為使流動上升的方法，例如可列舉增加作為塑化劑發揮功能的化合物的含量的方法等。作為使流動下降的方法，例如可列舉減少作為塑化劑發揮功能的化合物的含量的方法等。作為所述塑化劑，例如可列舉單官能的丙烯酸單體、單官能環氧樹脂、液狀環氧樹脂、及丙烯酸系樹脂等。 As a method for increasing the flow, for example, there can be cited a method of increasing the content of a compound that functions as a plasticizer. As a method for decreasing the flow, for example, there can be cited a method of reducing the content of a compound that functions as a plasticizer. As the plasticizer, for example, there can be cited a monofunctional acrylic monomer, a monofunctional epoxy resin, a liquid epoxy resin, and an acrylic resin.

作為於切割帶60上積層膜狀接著劑10的方法，可列舉：整面塗佈以上所述的接著劑組成物的清漆並加以乾燥、或者藉由印刷而進行部分塗敷的方法、以及藉由壓製或熱輥層壓而將預先製作的膜狀接著劑10積層於切割帶60上的方法。本實施形態中，就可連續地製造、效率佳的方面而言，較佳為利用熱輥層壓的方法。 As methods for depositing the film adhesive 10 on the dicing tape 60, there are: a method of coating the varnish of the adhesive composition described above on the entire surface and drying it, or a method of partially coating it by printing, and a method of depositing the pre-made film adhesive 10 on the dicing tape 60 by pressing or hot roller lamination. In this embodiment, the method using hot roller lamination is preferred in terms of continuous production and good efficiency.

切割帶60的膜厚並無特別限制，可根據膜狀接著劑10的膜厚或切割．黏晶一體型接著片的用途，基於所屬技術領域中具有通常知識者的知識而適當地確定。若切割帶60的厚度為60μm以上，則操作性變佳，而且可抑制因將藉由切割而單片化的半導 體元件自切割帶60剝離的步驟中的擴展(expanding)而切割帶60破裂。另一方面，就經濟性與操作性佳的觀點而言，切割帶60的厚度較佳為180μm以下。根據以上，切割帶60的膜厚較佳為60μm~180μm。 The film thickness of the dicing tape 60 is not particularly limited and can be appropriately determined based on the knowledge of a person with ordinary knowledge in the relevant technical field according to the film thickness of the film adhesive 10 or the purpose of the dicing and die-bonding integrated adhesive sheet. If the thickness of the dicing tape 60 is 60μm or more, the operability is improved, and the dicing tape 60 can be suppressed from breaking due to expansion in the step of peeling the semiconductor element singulated by dicing from the dicing tape 60. On the other hand, from the perspective of economy and good operability, the thickness of the dicing tape 60 is preferably 180μm or less. Based on the above, the film thickness of the dicing tape 60 is preferably 60μm~180μm.

以上對本發明的半導體裝置的製造方法及其中所使用的接著劑的較佳實施形態進行了說明，但本發明未必限定於所述實施形態，亦可於不超出其主旨的範圍內進行適當變更。 The above describes the preferred implementation forms of the semiconductor device manufacturing method and the adhesive used therein of the present invention, but the present invention is not necessarily limited to the above implementation forms and can be appropriately modified within the scope of its main purpose.

於所述實施形態中對膜狀接著劑進行了說明，且對使用膜狀接著劑的半導體裝置的製造方法進行了說明，但膜狀接著劑未必需要為膜狀，只要為接著劑即可。即，膜狀接著劑亦可為液狀或膏狀等的接著劑。 In the above-mentioned embodiment, a film adhesive is described, and a method for manufacturing a semiconductor device using the film adhesive is described, but the film adhesive does not necessarily need to be in a film form, as long as it is an adhesive. That is, the film adhesive may also be a liquid or paste adhesive.

圖6的半導體裝置200為將第一導線88及第一半導體元件Wa均埋入膜狀接著劑10中的線及半導體埋入型的半導體裝置，亦可不一定將第一半導體元件Wa埋入。即，半導體裝置200亦可為將第一導線88埋入膜狀接著劑10中的線埋入型的半導體裝置。另外，亦可並非將第一導線的全部埋入，只要將其至少一部分埋入即可。 The semiconductor device 200 of FIG. 6 is a line-and-semiconductor embedded semiconductor device in which both the first wire 88 and the first semiconductor element Wa are embedded in the film adhesive 10, but the first semiconductor element Wa may not necessarily be embedded. That is, the semiconductor device 200 may also be a line-embedded semiconductor device in which the first wire 88 is embedded in the film adhesive 10. In addition, the first wire may not be entirely embedded, as long as at least a portion of it is embedded.

於未將第一半導體元件Wa埋入膜狀接著劑10的情況下，就接著性高、而且可使半導體裝置200薄型化的方面而言，可為膜狀接著劑10的膜厚為30μm~200μm，且可為40μm~150μm，亦可為40μm~100μm，亦可為40μm~80μm。 When the first semiconductor element Wa is not buried in the film adhesive 10, the film thickness of the film adhesive 10 can be 30μm~200μm, 40μm~150μm, 40μm~100μm, or 40μm~80μm in terms of high adhesion and thinning of the semiconductor device 200.

半導體裝置200中，基板14為電路圖案84、電路圖案 94於表面各形成有兩處的有機基板90，但基板14並不限定於此，亦可使用引線框架等金屬基板。 In the semiconductor device 200, the substrate 14 is an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface, but the substrate 14 is not limited thereto, and a metal substrate such as a lead frame may also be used.

半導體裝置200於第一半導體元件Wa上積層有第二半導體元件Waa，具有半導體元件分成兩段積層的構成，但半導體裝置的構成並不限定於此。可於第二半導體元件Waa上進而積層第三半導體元件，亦可於第二半導體元件Waa上進而積層多個半導體元件。隨著所積層的半導體元件的數量增加，而可增加所獲得的半導體裝置的容量。 The semiconductor device 200 has a second semiconductor element Waa stacked on the first semiconductor element Wa, and has a structure in which the semiconductor element is stacked in two stages, but the structure of the semiconductor device is not limited thereto. A third semiconductor element may be further stacked on the second semiconductor element Waa, and multiple semiconductor elements may be further stacked on the second semiconductor element Waa. As the number of stacked semiconductor elements increases, the capacity of the obtained semiconductor device may increase.

所述實施形態的半導體裝置的製造方法中，於壓接步驟前，準備於第二半導體元件Waa上貼附有膜狀接著劑10的帶有膜狀接著劑的半導體元件102，但若經由膜狀接著劑10來將第二半導體元件Waa壓接於基板14，則亦可不準備如上所述的帶有膜狀接著劑的半導體元件。 In the manufacturing method of the semiconductor device of the embodiment, before the pressing step, a semiconductor element 102 with a film adhesive is prepared with a film adhesive 10 attached to the second semiconductor element Waa. However, if the second semiconductor element Waa is pressed to the substrate 14 via the film adhesive 10, the semiconductor element with a film adhesive as described above may not be prepared.

另外，所述實施形態的半導體裝置的製造方法中，於層壓步驟中，於半導體晶圓的單面層壓圖8所示的接著片100，並剝去基材膜20，藉此而貼附有膜狀接著劑10，但層壓時所使用的接著片並不限定於此。可代替接著片100而使用圖10及圖11所示的切割．黏晶一體型接著片120、接著片130。該情況下，當切割半導體晶圓時，無需另行貼附切割帶60。 In addition, in the manufacturing method of the semiconductor device of the embodiment, in the lamination step, the adhesive sheet 100 shown in FIG. 8 is laminated on one side of the semiconductor wafer, and the base film 20 is peeled off, thereby attaching the film adhesive 10, but the adhesive sheet used in the lamination is not limited to this. Instead of the adhesive sheet 100, the dicing and bonding integrated adhesive sheet 120 and adhesive sheet 130 shown in FIG. 10 and FIG. 11 can be used. In this case, when dicing the semiconductor wafer, it is not necessary to attach the dicing tape 60 separately.

另外，於層壓步驟中，亦可並非層壓半導體晶圓，而是使將半導體晶圓單片化而得的半導體元件層壓於接著片100。該情況下，可省略切割步驟。 In addition, in the lamination step, instead of laminating the semiconductor wafer, the semiconductor elements obtained by singulating the semiconductor wafer may be laminated on the bonding sheet 100. In this case, the dicing step may be omitted.

[實施例] [Implementation example]

以下，列舉實施例來對本發明進行更具體說明。然而，本發明並不限定於以下的實施例。 The following examples are given to explain the present invention in more detail. However, the present invention is not limited to the following examples.

<膜狀接著片的製作> <Production of film adhesive sheet>

(實施例1~實施例4及比較例1~比較例3) (Example 1 to Example 4 and Comparative Example 1 to Comparative Example 3)

於包含為表1所示的品名及組成比(單位：質量份)的作為(a)熱硬化性成分的環氧樹脂及酚樹脂、作為(c)填料的無機填料的組成物中，添加環己酮，進行攪拌混合。於其中添加表1所示的作為(b)高分子量成分的丙烯酸橡膠並進行攪拌，進而添加同樣於表1中示出的(e)偶合劑及(d)硬化促進劑來進行攪拌，直至各成分變得均勻，從而獲得清漆。 Cyclohexanone is added to a composition containing epoxy resin and phenol resin as (a) thermosetting components and an inorganic filler as (c) filler, and the mixture is stirred and mixed. Acrylic rubber as (b) high molecular weight component shown in Table 1 is added and stirred, and then (e) coupling agent and (d) hardening accelerator shown in Table 1 are added and stirred until the components become uniform, thereby obtaining a varnish.

再者，表1中的各成分的記號是指下述者。 In addition, the symbols of each component in Table 1 refer to the following.

(環氧樹脂) (Epoxy)

YDF-8170C：(商品名，東都化成(股)製造，雙酚F型環氧樹脂，環氧當量為159，常溫下為液體)。 YDF-8170C: (trade name, manufactured by Tohto Chemical Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent of 159, liquid at room temperature).

VG-3101L：(商品名，普林泰科(Printec)(股)製造，多官能環氧樹脂，環氧當量為210，軟化點為39℃~46℃)。 VG-3101L: (trade name, manufactured by Printec (Co., Ltd.), multifunctional epoxy resin, epoxy equivalent is 210, softening point is 39℃~46℃).

YDCN-700-10：(商品名，東都化成(股)製造，甲酚酚醛清漆型環氧樹脂，環氧當量為210，軟化點為75℃~85℃)。 YDCN-700-10: (trade name, manufactured by Tohto Chemical Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent is 210, softening point is 75℃~85℃).

HP-7200：(商品名，DIC(股)製造，含二環戊二烯的環氧樹脂，環氧當量為247，軟化點為55℃~65℃)。 HP-7200: (trade name, manufactured by DIC Corporation, epoxy resin containing dicyclopentadiene, epoxy equivalent of 247, softening point of 55℃~65℃).

(酚樹脂) (phenolic resin)

PSM-4326：(商品名，群榮化學工業(股)製造，羥基當量為105，軟化點為118℃~122℃)。 PSM-4326: (trade name, manufactured by Qunrong Chemical Industry Co., Ltd., hydroxyl equivalent is 105, softening point is 118℃~122℃).

米萊斯(Mirex)XLC-LL：(商品名，三井化學(股)製造，酚樹脂，羥基當量為175，軟化點為77℃，吸水率為1質量%，加熱質量減少率為4質量%)。 Mirex XLC-LL: (trade name, manufactured by Mitsui Chemicals Co., Ltd., phenolic resin, hydroxyl equivalent of 175, softening point of 77°C, water absorption of 1% by mass, heating mass reduction of 4% by mass).

(丙烯酸橡膠) (Acrylic rubber)

丙烯酸橡膠HTR-860P-3CSP：(商品名，長瀨化成(股)製造，重量平均分子量為80萬，具有縮水甘油基官能基的結構單元的比率為3%，Tg：-7℃)。 Acrylic rubber HTR-860P-3CSP: (trade name, manufactured by Nagase Chemicals Co., Ltd., weight average molecular weight is 800,000, the ratio of structural units with glycidyl functional groups is 3%, Tg: -7°C).

丙烯酸橡膠HTR-860P-30B-CHN：(商品名，長瀨化成(股)製造，重量平均分子量為23萬，具有縮水甘油基官能基的結構單元的比率為8%，Tg：-7℃)。 Acrylic rubber HTR-860P-30B-CHN: (trade name, manufactured by Nagase Chemicals Co., Ltd., weight average molecular weight is 230,000, the ratio of structural units with glycidyl functional groups is 8%, Tg: -7°C).

(無機填料) (Inorganic filler)

SC2050-HLG：(商品名，雅都瑪(Admatechs)(股)製造，二氧化矽填料分散液，平均粒徑為0.50μm)。 SC2050-HLG: (trade name, manufactured by Admatechs, silica filler dispersion, average particle size 0.50μm).

艾羅西爾(Aerosil)R972：(商品名，日本艾羅西爾(Aerosil)(股)製造，二氧化矽，平均粒徑為0.016μm)。 Aerosil R972: (trade name, manufactured by Japan Aerosil Co., Ltd., silicon dioxide, average particle size 0.016μm).

(硬化促進劑) (hardening accelerator)

固唑(Curezol)2PZ-CN：(商品名，四國化成工業(股)製造，1-氰基乙基-2-苯基咪唑)。 Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industries, Ltd., 1-cyanoethyl-2-phenylimidazole).

(偶合劑) (Coupling agent)

A-1160：(商品名，GE東芝(股)製造，γ-脲基丙基三乙氧 基矽烷)。 A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane).

A-189：(商品名，GE東芝(股)製造，γ-巰基丙基三甲氧基矽烷)。 A-189: (trade name, manufactured by GE Toshiba Corporation, γ-butylpropyltrimethoxysilane).

Figure 108106384-A0305-02-0028-2
Figure 108106384-A0305-02-0028-2

其次，利用100目的過濾器對所獲得的清漆進行過濾，並進行真空脫泡。將真空脫泡後的清漆塗佈於作為基材膜且已實施脫模處理的厚度38μm的聚對苯二甲酸乙二酯(PET)膜上。以90℃下5分鐘、繼而140℃下5分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而獲得於作為基材膜的PET膜上具有處於B階段狀態的厚度60μm的膜狀接著劑的接著片。於60℃下層壓該接著片，藉此而獲得包括厚度120μm的膜狀接著劑的接著片。 Next, the obtained varnish was filtered using a 100-mesh filter and vacuum degassed. The vacuum degassed varnish was applied to a 38μm thick polyethylene terephthalate (PET) film as a substrate film that had been subjected to a demolding treatment. The applied varnish was heat-dried in two stages at 90°C for 5 minutes and then at 140°C for 5 minutes. In this way, a bonding sheet having a film-like adhesive in a B-stage state and a thickness of 60μm on the PET film as a substrate film was obtained. The bonding sheet was laminated at 60°C to obtain a bonding sheet including a film-like adhesive with a thickness of 120μm.

<各種物性的評價> <Evaluation of various physical properties>

對於所獲得的接著片的膜狀接著劑，依照下述方法來進行熔融黏度、利用加壓烘箱進行加熱及加壓後的埋入性及半導體元件的位置偏移、接著力、以及耐回流性的評價。 The film adhesive of the obtained adhesive sheet was evaluated for melt viscosity, embedding properties after heating and pressurizing in a pressurized oven, positional shift of semiconductor components, adhesive strength, and reflow resistance according to the following method.

[熔融黏度] [Melt viscosity]

膜狀接著劑的熔融黏度可藉由利用下述方法測定剪切黏度而進行評價。準備多片所述接著片，將該些於60℃下層壓，並使膜狀接著劑以厚度成為約300μm的方式積層於基材膜上。將基材膜自所積層的膜狀接著劑剝離去除，於厚度方向上將其衝壓為10mm見方，藉此而獲得10mm見方、厚度300μm的四邊形的積層體。於動態黏彈性測定裝置ARES(TA儀器公司製造)上安置直徑8mm的圓形鋁板夾具，進而於其中安置所衝壓的膜狀接著劑的積層體。其後，一邊於35℃下賦予5%的應變，一邊以5℃/分鐘的升溫速度升溫至150℃同時進行測定，並記錄120℃下的熔融黏度的值。將測定結果示於表2中。 The melt viscosity of the film adhesive can be evaluated by measuring the shear viscosity using the following method. Prepare a plurality of adhesive sheets, laminate them at 60°C, and layer the film adhesive on a substrate film in a manner such that the thickness is about 300 μm. Remove the substrate film from the laminated film adhesive, and press it into a 10 mm square in the thickness direction, thereby obtaining a quadrilateral laminate of 10 mm square and 300 μm thickness. Place a circular aluminum plate fixture of 8 mm diameter on a dynamic viscoelasticity measuring device ARES (manufactured by TA Instruments), and place the laminate of the pressed film adhesive therein. Afterwards, a 5% strain was applied at 35°C and the temperature was raised to 150°C at a rate of 5°C/min. The melt viscosity at 120°C was recorded. The measurement results are shown in Table 2.

[利用加壓烘箱進行加熱及加壓後的埋入性] [Embeddability after heating and pressurization in a pressurized oven]

藉由下述方法來對膜狀接著劑的利用加壓烘箱進行加熱及加壓後的埋入性進行評價。將以上所獲得的接著片的膜狀接著劑(厚度120μm)於70℃下貼附於厚度50μm的半導體晶圓(8吋)。其次，將該等切割為7.5mm見方，獲得帶有膜狀接著劑的半導體元件(第二半導體元件)。另外，將切割．黏晶一體型膜(商品名：HR-9004-10，日立化成(股)製造，厚度為10μm)於70℃下貼附於厚度50μm的半導體晶圓(8吋)。其次，將該等切割為3.0mm見方而獲得晶片。將單片化的帶有HR-9004-10的晶片(第一半導體元件)於130℃、0.20MPa、2秒鐘的條件下壓接於表面凹凸最大為6μm的評價用基板，於120℃下加熱2小時而半硬化。 The embedding property of the film adhesive after heating and pressurizing in a pressurized oven was evaluated by the following method. The film adhesive (thickness 120μm) of the adhesive sheet obtained above was attached to a 50μm thick semiconductor wafer (8 inches) at 70°C. Next, they were cut into 7.5mm squares to obtain semiconductor elements with film adhesive (second semiconductor elements). In addition, a cutting and bonding integrated film (trade name: HR-9004-10, manufactured by Hitachi Chemical Co., Ltd., thickness 10μm) was attached to a 50μm thick semiconductor wafer (8 inches) at 70°C. Next, they were cut into 3.0mm squares to obtain chips. The singulated chip with HR-9004-10 (first semiconductor element) was pressed onto an evaluation substrate with a maximum surface unevenness of 6μm at 130°C, 0.20MPa, and 2 seconds, and semi-hardened by heating at 120°C for 2 hours.

其次，於以該方式獲得的第一半導體元件上配置所述帶有膜狀接著劑的半導體元件，將其於120℃、0.20MPa、2秒鐘的條件下壓接。此時，以將之前所壓接的帶有HR-9004-10的晶片配置於所述帶有膜狀接著劑的半導體元件的中央的方式進行位置對準。將所獲得的樣品投入加壓烘箱，將加壓烘箱中的壓力設定為0.7MPa，以3℃/分鐘的升溫速度自35℃升溫至140℃，於140℃下加熱30分鐘。利用超音波影像裝置SAT(日立建機製造，編號FS200II，探針：25MHz)對以該方式獲得的評價樣品進行分析，確認埋入性。埋入性的評價基準如下。將評價結果示於表2中。 Next, the semiconductor element with the film adhesive is arranged on the first semiconductor element obtained in this way, and it is pressed and bonded under the conditions of 120°C, 0.20 MPa, and 2 seconds. At this time, the position is aligned in such a way that the previously pressed chip with HR-9004-10 is arranged in the center of the semiconductor element with the film adhesive. The obtained sample is put into a pressurized oven, the pressure in the pressurized oven is set to 0.7 MPa, the temperature is raised from 35°C to 140°C at a heating rate of 3°C/min, and heated at 140°C for 30 minutes. The evaluation sample obtained in this way is analyzed using an ultrasonic imaging device SAT (manufactured by Hitachi Construction Machinery, No. FS200II, probe: 25 MHz) to confirm the embedding property. The evaluation criteria for embedding properties are as follows. The evaluation results are shown in Table 2.

A：空隙的比例小於5%。 A: The void ratio is less than 5%.

B：空隙的比例為5%以上。 B: The void ratio is 5% or more.

[利用加壓烘箱進行加熱及加壓後的半導體元件的位置偏移] [Positional displacement of semiconductor components after heating and pressurization in a pressurized oven]

當製作與所述利用加壓烘箱進行加熱及加壓後的埋入性評價相同的評價樣品時，獲取利用加壓烘箱進行加熱及加壓前後的晶片整體的圖像，藉由顯微鏡解析來測量利用加壓烘箱進行加熱及加壓前後的位置偏移。評價基準如下。將評價結果示於表2中。 When preparing the same evaluation sample as the embedding evaluation after heating and pressurizing in the pressurized oven, the image of the whole chip before and after heating and pressurizing in the pressurized oven is obtained, and the positional deviation before and after heating and pressurizing in the pressurized oven is measured by microscope analysis. The evaluation criteria are as follows. The evaluation results are shown in Table 2.

A：利用加壓烘箱進行加熱及加壓後的位置偏移小於10μm。 A: The positional deviation after heating and pressurization in a pressurized oven is less than 10μm.

B：利用加壓烘箱進行加熱及加壓後的位置偏移為10μm以上。 B: Positional deviation after heating and pressurization in a pressurized oven is greater than 10μm.

[接著力] [Continuation]

藉由下述方法來測定膜狀接著劑的晶片剪切強度(接著力)。 首先，將以上所獲得的接著片的膜狀接著劑(厚度120μm)於70℃下貼附於厚度400μm的半導體晶圓。其次，將該等切割為5.0mm見方，獲得帶有膜狀接著劑的半導體元件。將單片化的帶有膜狀接著劑的半導體元件的膜狀接著劑側，於120℃、0.1MPa、5秒鐘的條件下熱壓接於塗佈有阻焊油墨(商品名：AUS308，太陽油墨製造(股)製造)的基板上，獲得樣品。其後，將所獲得的樣品的接著劑於120℃下加熱2小時、於170℃下加熱3小時而使其硬化。進而，將接著劑硬化後的樣品於85℃、60%RH條件下放置168小時。其後，將樣品於25℃、50%RH條件下放置30分鐘，並於250℃下測定晶片剪切強度，將其作為接著力。將測定結果示於表2中。 The chip shear strength (bonding force) of the film adhesive was measured by the following method. First, the film adhesive (thickness 120μm) of the adhesive sheet obtained above was attached to a semiconductor wafer with a thickness of 400μm at 70°C. Next, the wafer was cut into 5.0mm squares to obtain a semiconductor element with a film adhesive. The film adhesive side of the singulated semiconductor element with a film adhesive was hot-pressed at 120°C, 0.1MPa, and 5 seconds on a substrate coated with solder resist ink (trade name: AUS308, manufactured by Sun Ink Mfg. Co., Ltd.) to obtain a sample. Afterwards, the adhesive of the obtained sample was heated at 120°C for 2 hours and at 170°C for 3 hours to harden it. Furthermore, the sample after the adhesive was hardened was placed at 85°C and 60% RH for 168 hours. Afterwards, the sample was placed at 25°C and 50% RH for 30 minutes, and the chip shear strength was measured at 250°C as the bonding force. The measurement results are shown in Table 2.

[耐回流性] [Reflow resistance]

藉由下述方法來對膜狀接著劑的耐回流性進行評價。以與所述利用加壓烘箱進行加熱及加壓後的埋入性的評價中獲得的評價樣品相同的方式，製作評價樣品。使用模製用密封材(日立化成(股)製造，商品名：CEL-9750ZHF10)，將所獲得的評價樣品於175℃、6.7MPa、90秒的條件下以樹脂密封，並於175℃、5小時的條件下使密封材硬化而獲得封裝體。 The reflow resistance of the film adhesive was evaluated by the following method. The evaluation sample was prepared in the same manner as the evaluation sample obtained in the evaluation of embedding property after heating and pressurization using a pressurized oven. The obtained evaluation sample was sealed with resin at 175°C, 6.7MPa, and 90 seconds using a molding sealant (manufactured by Hitachi Chemical Co., Ltd., trade name: CEL-9750ZHF10), and the sealant was cured at 175°C and 5 hours to obtain a package.

準備24個所述封裝體，將該些暴露於由電子器件工業聯合會(Joint Electron Device Engineering Council，JEDEC)所規定的環境下(水準3、30℃、60%RH、192小時)來進行吸濕。繼而，使吸濕後的封裝體於紅外(infrared，IR)回流爐(260℃、最 高溫度265℃)中經過三次。評價基準如下。將評價結果示於表2中。 24 packages were prepared and exposed to the environment specified by the Joint Electron Device Engineering Council (JEDEC) (level 3, 30°C, 60% RH, 192 hours) to absorb moisture. Then, the packages after moisture absorption were passed through an infrared (IR) reflow furnace (260°C, maximum temperature 265°C) three times. The evaluation criteria are as follows. The evaluation results are shown in Table 2.

A：封裝體的破損或厚度的變化、或者膜狀接著劑與半導體元件的界面處的剝離等一個亦未觀察到。 A: No damage or thickness change of the package, or peeling at the interface between the film adhesive and the semiconductor element was observed.

B：封裝體的破損或厚度的變化、或者膜狀接著劑與半導體元件的界面處的剝離等觀察到一個以上。 B: One or more damage or thickness change of the package, or peeling at the interface between the film adhesive and the semiconductor element is observed.

Figure 108106384-A0305-02-0032-3
Figure 108106384-A0305-02-0032-3

如根據表2所示的結果而可知般，確認到：與比較例1~比較例3的接著片相比，實施例1~實施例4的接著片的埋入性優異且不存在半導體元件的位置偏移，耐回流性亦優異。 As can be seen from the results shown in Table 2, it is confirmed that compared with the bonding sheets of Comparative Examples 1 to 3, the bonding sheets of Examples 1 to 4 have excellent embedding properties, no positional shift of semiconductor components, and excellent reflow resistance.

10:膜狀接著劑 10: Film adhesive

14:基板 14: Substrate

41:接著劑 41: Follow-up agent

42:密封材(樹脂) 42: Sealing material (resin)

84、94:電路圖案 84, 94: Circuit diagram

88:第一導線 88: First conductor

90:有機基板 90: Organic substrate

98:第二導線 98: Second wire

200:半導體裝置 200:Semiconductor devices

Wa:第一半導體元件 Wa: First semiconductor element

Waa:第二半導體元件 Waa: Second semiconductor element

Claims (3)

一種半導體裝置的製造方法，其包括：第一打線接合步驟，將第一半導體元件經由第一導線而電性連接於基板上；壓接步驟，於80℃~180℃、0.01MPa~0.50MPa的條件下將第二半導體元件經由具有熱硬化性的接著劑而壓接於所述基板0.5秒~3.0秒；以及加熱加壓步驟，於加壓環境下對所述壓接步驟後的接著劑進行加熱，藉此而對所述接著劑進行硬化處理，於所述加熱加壓步驟中，使用加壓烘箱對所述接著劑，於0.2MPa~1.0MPa的加壓環境下，以60℃~175℃加熱5分鐘以上，所述硬化處理前的接著劑的120℃下的熔融黏度為1000Pa．s~3000Pa．s，並且藉由經過所述加熱加壓步驟，而將所述第一導線的至少一部分及所述第一半導體元件的至少一者埋入硬化處理後的接著劑中，於加壓環境下對所述壓接步驟後的接著劑進行加熱為所述接著劑一邊承受來自周圍氣體的壓力一邊得到加熱。 A method for manufacturing a semiconductor device comprises: a first wire bonding step, in which a first semiconductor element is electrically connected to a substrate via a first wire; a pressing step, in which a second semiconductor element is pressed to the substrate via a thermosetting adhesive at 80°C to 180°C and 0.01MPa to 0.50MPa for 0.5 seconds to 3.0 seconds; and a heating and pressing step, The adhesive after the pressing step is heated in a pressurized environment to perform a hardening treatment on the adhesive. In the heating and pressurizing step, the adhesive is heated at 60° C. to 175° C. for more than 5 minutes in a pressurized environment of 0.2 MPa to 1.0 MPa using a pressurized oven. The melt viscosity of the adhesive before the hardening treatment at 120° C. is 1000 Pa. s to 3000 Pa. s. s, and by the heating and pressurizing step, at least a portion of the first wire and at least one of the first semiconductor elements are buried in the adhesive after the hardening treatment, and the adhesive after the pressing step is heated in a pressurized environment so that the adhesive is heated while bearing the pressure from the surrounding gas. 如申請專利範圍第1項所述的半導體裝置的製造方法，其包括：於所述加熱加壓步驟後，於所述第二半導體元件上進而積層第三半導體元件的步驟。 The method for manufacturing a semiconductor device as described in item 1 of the patent application scope includes: after the heating and pressurizing step, a step of further laminating a third semiconductor element on the second semiconductor element. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其更包括： 第二打線接合步驟，經由第二導線而將所述基板與所述第二半導體元件電性連接；以及利用樹脂來密封所述第二半導體元件的步驟。 The method for manufacturing a semiconductor device as described in item 1 or 2 of the patent application further includes: a second wire bonding step to electrically connect the substrate to the second semiconductor element via a second wire; and a step of sealing the second semiconductor element with a resin.
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