TWI851227B - Single-sided polishing methof for wafer, method for manufacturing wafer, and single-sided polishing device for wafer - Google Patents

Abstract

[Problem] Provide a single-sided polishing method for wafers that can obtain wafers of desired shapes. [Solution] The single-sided polishing method for wafers is a single-sided polishing method for wafers that presses a wafer held by a polishing head against a suede type polishing pad that is larger than the wafer, and uses a single-sided polishing equipment that polishing the wafer by rotating the polishing head and the polishing pad. The method has: a compressibility distribution calculation step finding a compressibility distribution on the radial direction of the polishing pad according to a target shape of the wafer after polishing; a polishing pad adjustment step adjusting the polishing pad to have the compressibility distribution; and a polishing step polishing the wafer using the polishing pad having the compressibility distribution.

Description

Single-side polishing method of wafer, manufacturing method of wafer, and single-side polishing device of wafer

The present invention relates to a single-side polishing method of a wafer, a manufacturing method of a wafer, and a single-side polishing device of a wafer.

It is known that the physical properties of the surface of a polishing pad will affect the processing margin when a single side of a wafer is polished using the polishing pad. As a technology for coping with such an influence, a technology for improving the polishing performance by using a polishing pad having a ratio of surface roughness to compression ratio in a specific range is known (for example, refer to Patent Document 1). As another technology, the following is known: the number of rotations of a platen on which a polishing pad is arranged and the moving speed of the conditioning head in the radial direction of the platen are controlled according to the distance of the conditioning head from the center of the platen, thereby uniformly conditioning the surface of the polishing pad (for example, refer to Patent Document 2). As another technique, the surface shape of the polishing cloth is corrected by changing the correction amount of the surface shape corresponding to the position of the surface of the polishing cloth to correct the deviation of the pressure acting on the wafer (for example, refer to patent document 3). [Prior technical document] [Patent document]

[Patent Document 1] Japanese Patent Publication No. 2003-142437 [Patent Document 2] Japanese Patent Publication No. 2017-064874 [Patent Document 3] Japanese Patent Publication No. 2002-187059

[The problem the invention is trying to solve]

However, as the requirements for wafer shape accuracy increase, especially ESFQR (Edge Site Flatness Front Reference sQuare Deviation) at the wafer periphery, it becomes difficult to obtain a wafer of the desired shape simply by making the overall compression rate of the polishing pad or the surface shape uniform, as described in patent documents 1 to 3.

The purpose of the present invention is to provide: a single-side polishing method for a wafer, a wafer manufacturing method, and a single-side polishing device for a wafer, which can obtain a wafer of a desired shape. [Means for solving the problem]

The single-side polishing method of the wafer of the present invention is a single-side polishing method of a wafer, which presses a wafer held by a polishing head against a suede-type polishing pad larger than the wafer, and uses a single-side polishing device that rotates the polishing head and the polishing pad to polish the wafer, and comprises: a compression rate distribution calculation step of obtaining a radial compression rate distribution of the polishing pad according to a target shape of the wafer after polishing; a polishing pad adjustment step of adjusting the polishing pad to have the compression rate distribution; and a polishing step of polishing the wafer using the polishing pad having the compression rate distribution.

In the single-side polishing method of the wafer of the present invention, it is preferred that: the polishing pad adjustment step presses the brush against the polishing pad while rotating the polishing pad, thereby forming an annular area having a compression rate different from other areas on the polishing pad.

In the single-side polishing method of the wafer of the present invention, it is preferred that: the polishing pad adjustment step forms the annular region so that the thickness of the region having the compression rate distribution is substantially equal.

In the single-sided polishing method of the wafer of the present invention, it is preferred that: the polishing step is to polish the wafer in a state where the wafer is located at a position further outward than the rotation center of the polishing pad, and the polishing pad adjustment step uses the brush to form an annular area, and the annular area is a region where a position further outward than the 99% position and further inward than the 100% position is set as an inner edge when the rotation center of the polishing pad is set as the 0% position and the position on the outer edge of the wafer farthest from the rotation center is set as the 100% position, and the compression rate is greater than that of the inner area.

In the single-side polishing method of the wafer of the present invention, it is preferred that the target shape index of the wafer is ESFQR.

In the single-sided polishing method of the wafer of the present invention, it is preferred that: the polishing step is to polish the wafer in a state where the wafer is located at a position further outward than the rotation center of the polishing pad, the polishing pad adjustment step is to form an annular area using the brush so that three or more areas with different compression rates are arranged side by side in the radial direction, and the third area from the inner side of the three or more areas with different compression rates is an annular area with a position further inward than the 100% position being set as the inner edge when the rotation center of the polishing pad is set as 0% and the position on the outer edge of the wafer farthest from the rotation center is set as 100%.

In the single-side polishing method of the wafer of the present invention, it is preferred that the target shape indicator of the wafer is GBIR.

In the single-sided polishing method of the wafer of the present invention, it is preferred to include: a polishing device preparation step, in which the compression rate distribution calculation step and the polishing pad adjustment step are performed on the aforementioned plurality of single-sided polishing devices based on the aforementioned target shapes that are different from each other, so that the compression rate distributions of the aforementioned polishing pads respectively possessed by the plurality of aforementioned single-sided polishing devices become different from each other; and a polishing device selection step, in which the aforementioned single-sided polishing device that can make the wafer to be polished become the set target shape is selected from the aforementioned plurality of single-sided polishing devices, wherein the aforementioned polishing step uses the aforementioned single-sided polishing device selected in the aforementioned polishing device selection step to polish the aforementioned wafer.

The wafer manufacturing method of the present invention comprises a finishing step of finishing the aforementioned wafer. In the aforementioned finishing step, the aforementioned wafer is polished by the aforementioned single-side polishing method of the wafer.

The single-side polishing device of the wafer of the present invention is a single-side polishing device that presses a wafer held by a polishing head against a suede-shaped polishing pad that is larger than the wafer, and rotates the polishing head and the polishing pad to polish the wafer. The single-side polishing device comprises: a polishing pad adjustment unit that adjusts the polishing pad; a rotation drive unit that rotates the polishing head and the polishing pad; and a control device, wherein the control device The device comprises: a compression rate distribution calculation unit for calculating the radial compression rate distribution of the polishing pad according to the target shape of the wafer after polishing; a polishing pad adjustment control unit for controlling the polishing pad adjustment unit to adjust the polishing pad to have the compression rate distribution; and a polishing control unit for controlling the rotation drive unit to polish the wafer using the polishing pad having the compression rate distribution.

In the single-sided polishing device for wafers of the present invention, it is preferred that: the polishing pad adjustment section has a brush, and the polishing pad adjustment control section controls the polishing pad adjustment section to press the brush against the polishing pad while rotating the polishing pad, thereby forming an annular area having a compression rate different from that of other areas.

In the single-side polishing device of the wafer of the present invention, it is preferred that: the polishing pad adjustment unit has a position adjustment unit for adjusting the position of the brush, and the polishing pad adjustment control unit controls the position adjustment unit so that the brush is located at a height position according to the compression rate.

[First Implementation Form] The first implementation form of the present invention is described below.

<Structure of Single-sided Polishing Device> First, the single-sided polishing device 1 of the first embodiment of the present invention will be described with reference to the attached drawings. The single-sided polishing device 1 shown in FIG. 1 polishes a single side (polished surface W1) of a wafer W (hereinafter, the polishing of the single-sided polishing device 1 is sometimes referred to as "single-sided polishing"). The single-sided polishing device 1 includes a polishing section 2, a polishing pad adjustment section 4, and a control device 5.

The polishing section 2 includes: a polishing head 21, a head holding section 22, a head lifting section 23, a head driving section 24 as a rotation driving section, a platen 25, a polishing pad 26, a platen driving section 27 as a rotation driving section, a wafer pressure adjustment section 28, and a polishing liquid supply section 29. In addition, although the polishing section 2 may include only one polishing head 21, the present embodiment illustrates a configuration in which the polishing section 2 includes a plurality of polishing heads 21.

Each polishing head 21 is formed in a disk shape and holds the surface (back surface) of the wafer W opposite to the polished surface W1 (front surface) by surface tension of water or the like.

A back pad 211 is disposed on the lower surface of the polishing head 21 to cover the entire lower surface. The back pad 211 is made of, for example, a porous resin material and can contain a liquid such as water.

A ridge-shaped retainer ring 212 is disposed on the outer periphery of the lower surface of the backing pad 211. The retainer ring 212 contacts the outer periphery of the wafer W located inside the retainer ring 212 and retains the wafer W so that it does not fall off from the gap between the backing pad 211 and the polishing pad 26.

A cylindrical head rotating shaft component 213 is arranged at the center of the upper surface of each polishing head 21.

The head holding part 22 holds the upper end side of the head rotation shaft member 213 of each polishing head 21 so that the head rotation shaft member 213 can rotate around its axis. The head holding part 22 holds the head rotation shaft member 213 so that the plurality of polishing heads 21 are arranged side by side at equal intervals on the circumference of a predetermined circle.

The head lifting unit 23 lifts and lowers the head holding unit 22 .

The head driving unit 24 is arranged inside the head holding unit 22. The head driving unit 24 is composed of, for example, a motor, and rotates a head rotating shaft member 213 connected to a rotating shaft of the motor.

The platen 25 is formed in a disk shape and is disposed below the plurality of polishing heads 21. In the center of the lower surface of the platen 25, a cylindrical platen rotating shaft member 251 is disposed.

The polishing pad 26 is attached to the upper surface of the platen 25. The polishing pad 26 is formed into a circle larger than the wafer W and is configured to simultaneously polish the wafer W held by a plurality of polishing heads 21. The polishing pad 26 is a suede-type soft polishing pad. The compression rate of the polishing pad 26 is, for example, 23% to 36%. The polishing pad 26 has a Nap layer. The wafer W is polished by pressing the polished surface W1 of the wafer W to the Nap layer of the polishing pad 26 with a predetermined force. Here, the Nap layer refers to a layer having a large number of pores formed by foaming.

The fixed plate driving unit 27 is constituted by, for example, a motor, and rotates a fixed plate rotating shaft member 251 connected to the rotating shaft of the motor in the same direction as or in the opposite direction to the rotating direction of the polishing head 21.

The wafer pressure adjustment unit 28 is a fixed pressure method device, and adjusts the pressure for pressing the wafer W against the polishing pad 26. In the fixed pressure method, the polishing head 21 is pushed downward by the cylinder pressure, and the polishing head 21 is pressed against the upper surface of the wafer W through the backing pad 211, thereby pressing the polished surface W1 of the wafer W against the polishing pad 26.

The polishing liquid supply unit 29 supplies slurry-like polishing liquid to the polishing pad 26 through a nozzle 291. The polishing surface W1 of the wafer W is polished using the polishing liquid.

In addition, a swing drive unit for swinging each polishing head 21 in a direction parallel to the polishing surface of the polishing pad 26 may also be provided in the polishing unit 3. For example, the swing drive unit swings each polishing head 21 around the rotation axis D of the polishing head 21 by holding the head lifting unit 23 and causing the head lifting unit 23 to reciprocate in one direction (for example, reciprocate in the left and right direction in FIG. 1) during the polishing of the wafer W. Using such a swing drive unit, by swinging the polishing head 21 during polishing, the width of the outer peripheral portion of the polished wafer W can be adjusted through a predetermined adjustment area described later, and a wafer W of a desired shape can be obtained.

The polishing pad adjustment section 4 adjusts the polishing pad 26 so that the polishing pad 26 has a radial compression rate distribution. The adjusted area compression rate of the polishing pad 26 becomes larger and softer. The polishing pad adjustment section 4 has a brush holding section 41, a brush 42, a position adjustment section 43, and the above-mentioned platen and platen driving section 27.

The brush holding part 41 has a vertically extending rod-shaped brush rotating shaft member 411. At the upper end of the brush rotating shaft member 411, a holding arm 412 extending in the horizontal direction is arranged.

The brush 42 is arranged at the front end side of the holding arm 412. The brush 42 is composed of a plurality of nylon hairs that are bundled into a circular shape, and is formed into a shape smaller than the surface of the polishing pad 26 in a plan view. Although the details are described later, by rotating the polishing pad that presses the brush 42, the compression rate of the contact area of the polishing pad 26 with the brush 42 becomes higher, and a compression rate distribution is formed on the polishing pad 26. As for the brush 42, from the perspective of improving the resolution of the compression rate distribution, the diameter of the cylindrical shape formed by the bundled hair is preferably 5 mm or less. In addition, the length of the bristles of the brush 42 is preferably greater than 0.5 mm and less than 15 mm from the viewpoint of suppressing the change in compression rate due to deformation of the bristles when the brush 42 is pressed against the polishing pad 26.

The position adjusting unit 43 adjusts the position of the brush 42. The position adjusting unit 43 raises and lowers the brush rotating shaft member 411 to thereby adjust the height position of the brush 42. The position adjusting unit 43 rotates the brush rotating shaft member 411 around its axis to thereby adjust the horizontal position of the brush 42 on the polishing pad 26.

Here, a method for adjusting the polishing pad 26 to have a compression rate distribution is described using the polishing head adjustment unit 4. The position adjustment unit 43, based on the control of the control device 5, presses the brush 42 against the polishing pad 26 in a state where the holding arm 412 is located at a position indicated by a solid line as shown in FIG. 2. Next, the plate drive unit 27 rotates the plate 25 based on the control of the control device 5. As the plate 25 rotates, the first adjustment area 261 of the polishing pad 26 in an annular shape indicated by a two-dot dashed line is adjusted. In addition, when the brush 42 is pressed against the polishing pad 26 with the holding arm 412 positioned at the position indicated by the two-dot dashed line, the fifth adjustment area 265 of the polishing pad 26 in the form of a ring indicated by the two-dot dashed line is adjusted when the plate 25 is rotated. Furthermore, by setting the position of the polishing pad 26 pressing the brush 42 at a predetermined position, the second adjustment area 262, the third adjustment area 263, and the fourth adjustment area 264 indicated by the two-dot dashed line are adjusted.

The compression rate of the adjusted area (adjusted area) becomes greater than the compression rate of the unadjusted area (unadjusted area), for example, the compression rate of the unadjusted area 260 located inside the first adjustment area 261. In addition, the compression rate of the adjustment area increases as the amount of pressure of the brush 42 relative to the polishing pad 26 increases (the lower the height position of the brush 42). In addition, the compression rate of the adjustment area increases as the adjustment time increases when the amount of pressure of the brush 42 relative to the polishing pad 26 is the same. In addition, the thickness of the unadjusted area and each adjusted area is substantially equal regardless of the amount of pressure of the brush 42 relative to the polishing pad 26. Therefore, the polishing pad adjustment section 4 can form an annular adjustment area on the polishing pad 26 so that areas with different compression rates are arranged side by side in the radial direction of the polishing pad 26, and the thickness of the areas with compression rate distribution is substantially equal. That is, the so-called compression rate distribution refers to the distribution formed by annular adjustment areas with different compression rates.

In addition, the higher the compression rate of the polishing pad 26, the smaller the processing margin during polishing becomes. Therefore, for example, in order to make the compression rate of the outer area higher than the compression rate of the inner area, by forming the compression rate distribution on the polishing pad 26, the processing margin of the outer area of the wafer W can be made smaller than the processing margin of the inner area.

In addition, although FIG. 2 shows an example of five annular adjustment areas with different compression rates, the number may be one or more and four or less, or six or more. In addition, the widths of the plurality of adjustment areas may be the same or different. In addition, the compression rate distribution may be formed so that the compression rate of the outer area is greater than that of the inner area, or may be formed so that the compression rate of the outer area is less than that of the inner area. In addition, while the brush 42 is moved in the horizontal direction, the entire polishing pad 26 may be adjusted. When adjusting the entire polishing pad 26, a brush that is the same size as the polishing pad 26 or larger than the polishing pad 26 in the plan view may be used. Furthermore, a plurality of brushes 42 of different sizes in plan view may be attached to the holding arm 412 and the brush 42 may be selected according to the size of the adjustment area of the polishing pad 26.

The control device 5 controls the polishing section 2 and the polishing pad adjustment section 4. As shown in FIG. 3 , the control device 5 includes an input section 51, a memory section 52, and a control section 53.

The input unit 51 is composed of, for example, a touch panel or a physical button. The input unit 51 is used, for example, for inputting various settings related to the polishing of the wafer W by the operator, and outputs a signal corresponding to the input operation to the control unit 53. As the input setting, the target shape of the polished surface W1 of the wafer W (hereinafter, sometimes referred to as the "target shape of the wafer W") can be exemplified. In addition, the input unit 51 can also obtain various setting information related to the polishing of the wafer W from an external network connected to the control device 5.

Here, as indicators indicating the target shape of the wafer W, ESFQR, ZDD (Z-height Double Differentiation), and GBIR (Global flatness Back reference Ideal Range) can be exemplified.

ESFQR is an index indicating the site flatness at the periphery (edge) of the wafer W. GBIR is an index indicating the global flatness of the wafer W. ESFQR and GBIR are measured by a flatness measurement device (for example, Wafer sight 2 manufactured by KLA-Tencor).

ESFQR divides the outer periphery of the wafer W into a large number (e.g. 72) of sector-shaped regions (parts), and uses the plane within the part, which is used to calculate the data within the part, as the reference displacement from the plane within the part, with one data for each part.

ZDD is an indicator that indicates the change in slope (curvature) near the periphery of the wafer W. ZDD is obtained by taking the displacement profile of the wafer W from the center to the outermost periphery of the wafer W by the second derivative. A positive value of ZDD indicates that the surface is displaced in the rebound direction, whereas a negative value indicates that the surface is displaced in the droop direction. The closer the ZDD value is to 0, the less inclined (flat) the wafer W is near the periphery.

The memory unit 52 stores various information about the polishing of the wafer W so that the control unit 53 can read the information. As information about the polishing of the wafer W, the first related information used for calculating the compression rate distribution of the polishing pad 26 and the second related information used for calculating the adjustment conditions of the polishing pad 26 can be exemplified. In addition, the first related information and the second related information can also be stored in a server device that is located at a location far away from the single-sided polishing device 1. In this case, the information stored in the server device can also be used by a plurality of single-sided polishing devices 1.

The first related information indicates the correlation between the radial compression rate distribution of the polishing pad 26 and the shape of the wafer W after single-sided polishing under the preset polishing conditions (e.g., the pressure or polishing time for pressing the wafer W to the polishing pad 26). Here, if the shape of the wafer W before single-sided polishing is always the same, the first related information may be the above-mentioned structure. However, in the case where the shape of the wafer W before single-sided polishing is sometimes different, as the first related information, information indicating the correlation between the radial compression rate distribution of the polishing pad 26 and the shape of the wafer W before and after single-sided polishing may be applied. In addition, if the polishing conditions are always the same, the first related information may be the above-mentioned structure. However, when the polishing conditions are sometimes different, the first related information may be information indicating the correlation between the polishing conditions, the radial compression rate distribution of the polishing pad 26, and the shape of the wafer W before and after single-sided polishing (or after single-sided polishing).

The second related information indicates the correlation between the radial compression rate distribution of the polishing pad 26 and the adjustment condition of the polishing pad 26. As the adjustment condition including the second related information, the pressing position, pressing amount and adjustment time of the brush 42 relative to the polishing pad 26 can be exemplified. In addition, the adjustment condition may further include the size of the brush 42 or the hardness of the bristles.

In addition, the first related information and the second related information mentioned above may be information having a table structure or information expressed as a function.

The control unit 53 includes a CPU, and the CPU implements various functions by executing the program stored in the memory unit 52. The control unit 53 includes an information acquisition unit 531, a compression rate distribution calculation unit 532, a polishing pad adjustment condition calculation unit 533, a polishing pad adjustment control unit 534, and a polishing control unit 535.

The information acquisition unit 531 acquires the first related information and the second related information from the storage unit 52. The information acquisition unit 531, for example, acquires target shape information indicating the target shape of the wafer W set using the input unit 51.

The compression rate distribution calculation unit 532 obtains the radial compression rate distribution of the polishing pad 26 according to the target shape of the wafer W after single-side polishing based on the target shape information and the first correlation information acquired by the information acquisition unit 531.

In addition, when the shape of the wafer W before single-sided polishing is sometimes different, the compression rate distribution calculation unit 532 can also obtain the radial compression rate distribution of the polishing pad 26 based on the first relevant information including the shape of the wafer W before single-sided polishing. In this case, the information acquisition unit 531 can obtain the information indicating the shape before single-sided polishing from the input unit 51, or obtain the information indicating the shape before single-sided polishing from the shape measuring device. In addition, when the polishing conditions are sometimes different, the compression rate distribution calculation unit 532 can also obtain the radial compression rate distribution of the polishing pad 26 based on the first relevant information including the polishing conditions. In this case, the information acquisition unit 531 may also acquire information indicating the polishing conditions from the input unit 51.

The polishing pad adjustment condition calculation unit 533 obtains an adjustment condition for making the compression rate distribution of the polishing pad 26 equal to the compression rate distribution obtained by the compression rate distribution calculation unit 532 based on the second correlation information obtained by the information acquisition unit 531.

The polishing pad adjustment control unit 534 controls the polishing pad adjustment unit 4 to adjust the polishing pad 26 based on the adjustment condition obtained by the polishing pad adjustment condition calculation unit 533 .

The polishing control unit 535 controls the polishing unit 2 to rotate the polishing head 21 and the polishing pad 26 , thereby polishing the polished surface W1 of the wafer W.

<Wafer Manufacturing Method> Next, a wafer W manufacturing method including a single-side polishing method of the wafer W using the single-side polishing device 1 is described. As shown in FIG. 4 , the wafer W manufacturing method includes a pulling step (step S1), a block processing step (step S2), a slicing step (step S3), a pre-processing step (step S4), a double-side simultaneous polishing step (step S5), a single-side finishing step as a finishing step (step S6), a cleaning step (step S7), and a wafer final inspection step (step S8).

In the pulling step of step S1, a cylindrical silicon single crystal is pulled from a silicon melt using the Czochralski method.

In the block processing step of step S2, the outer periphery of the single crystal ingot is ground and notched according to the crystal orientation. Then, the single crystal ingot is cut into a plurality of blocks by, for example, a band saw.

In the slicing step of step S3 , the block is sliced into a plurality of wafers W having a thickness of about 1 mm, for example, by an inner peripheral blade cutter, a wire saw, or the like.

In the pre-processing step of step S4, while performing chamfering, rough polishing (lapping) is performed with, for example, an alumina polishing material to make the two surfaces of the wafer W parallel. Then, after applying etching or the like as necessary, a flattening process is performed to eliminate the unevenness on the surface of the wafer W.

In the double-sided polishing step of step S5, the pre-processed wafer W is subjected to mirror finishing to improve the flatness. For example, the double-sided polishing is performed using colloidal silica liquid to further improve the flatness and obtain a wafer W with a predetermined flatness.

The single-sided finishing step of step S6 includes the single-sided polishing method of the wafer W of the present invention. In the single-sided finishing step, the polished surface W1 of the wafer W obtained by the simultaneous polishing step of both sides is polished using the single-sided polishing device 1. By applying the polishing process through the single-sided finishing step, the surface roughness of the polished surface W1 of the wafer W can be adjusted while removing scratches and damage (damage) on the polished surface W1 of the wafer W. The details of the single-sided finishing step are described later.

In the cleaning step of step S7, the wafer W obtained in the single-side finishing step is cleaned by, for example, an alkaline solution.

In the final wafer inspection step of step S8, a wafer surface inspection device is used to inspect surface particles or scratches on the wafer W. After the necessary quality inspection, qualified products are packaged and shipped.

Next, the details of the single-sided finishing step of step S6 are described. As shown in FIG. 5, the single-sided finishing step includes: a related information acquisition step (step S61), a target shape information acquisition step (step S62), a compression rate distribution calculation step (step S63), a polishing pad adjustment condition calculation step (step S64), a polishing pad adjustment step (step S65), a wafer setting step (step S66), a polishing step (step S67), and a wafer removal step (step S68).

In the relevant information acquisition step of step S61 , the information acquisition unit 531 of the control unit 53 acquires the first relevant information and the second relevant information from the memory unit 52 .

In the target shape information acquisition step of step S62, the information acquisition unit 531 acquires the target shape information based on the operator's input operation to the input unit 51. For example, the information acquisition unit 531 acquires information indicating ESFQR, ZDD, or GBIR as the target shape information. In addition, the information acquisition unit 531 may also acquire the target shape information from an external network via the input unit 51.

In the compression rate distribution calculation step of step S63, the compression rate distribution calculation unit 532 obtains the compression rate distribution of the polishing pad 26 for making the shape of the wafer W after single-side polishing become the target shape based on the first relevant information obtained in the relevant information acquisition step and the target shape information obtained in the target shape acquisition step.

Here, when the indicator representing the target shape information is ESFQR or ZDD, the plurality of regions having different compression rates formed by step S65 are preferably composed of two regions, as shown in FIG6 , including: an unadjusted circular region 26A, and an adjusted region 26B that is adjusted to a circular ring shape and surrounds the unadjusted region 26A. On the other hand, when the index representing the target shape information is ESFQR, the adjustment area 26B is preferably formed at the same position as in the case of ESFQR, or at a position further inside or outside the outer edge of the wafer W from the rotation center C of the polishing pad 26 when the rotation center C of the polishing pad 26 is set to 0% and the position of the wafer W from the rotation center C of the polishing pad 26 is set to 100%. The area is an annular area with a larger compression rate than the inner unadjusted area 26A. In addition, when the index representing the target shape information is ZDD, the adjustment area 26B may be formed at the same position as in the case of ESFQR, or may be formed further inside or outside than in the case of ESFQR. The compression rate and width of the adjustment area 26B vary according to the value of ESFQR or ZDD indicated by the target shape information.

Here, to specifically explain the above 100% position in the case where the polishing section 2 has a swing drive section, when the polishing section 2 has one polishing head 21, the position of the wafer W at the farthest outer edge from the rotation center C of the polishing pad 26 when the polishing head 21 is arranged at the center of the swing amplitude is the 100% position. In addition, when the polishing section 2 has a plurality of polishing heads 21, the position of each polishing head 21 at the farthest outer edge from the rotation center of the polishing pad 26 when the polishing head 21 is arranged at the center of the swing amplitude is the 100% position. If expressed in another way, when the centers of the multiple polishing heads 21 are equidistant from the center of the polishing pad 26, the position of the wafer W at the farthest outer edge from the rotation center C of the polishing pad 26 is the 100% position.

By using such a compression rate distribution of the polishing pad 26 for polishing, the processing margin of the area other than the outer periphery of the wafer W polished by the unadjusted area 26A can be made roughly the same, and on the other hand, the processing margin of the outer periphery of the wafer W polished by the adjusted area 26B can be made smaller than the area inside. In particular, by setting the adjustment area 26B to a circular area whose inner edge is further outside than the 99% position and further inside than the 100% position, by adjusting only the area of the polishing pad 26 that contacts the outer periphery of the wafer W, the outer periphery shape such as ESFQR or ZDD can be controlled without affecting the overall shape of the wafer W. In addition, the position of the outer edge of the adjustment area 26B is not particularly limited, but in Figure 6, the position of 120% is shown.

Furthermore, when the indicator representing the target shape information is GBIR, the plurality of regions having different compression rates formed by step S65 include more than three regions, and the third region from the inner side is preferably: a circular region with a position further inner than the 100% position as the inner edge when the rotation center C of the polishing pad 26 is set to the 0% position and the position of the wafer W on the outer edge farthest from the rotation center of the polishing pad 26 is set to the 100% position. For example, the compression rates of the circular unadjusted area with the center at 0% and the outer edge at 25%, the annular first adjustment area with the inner edge at 25% and the outer edge at 55%, and the annular second adjustment area with the inner edge at 55% and the outer edge at 120% are preferably different from each other. The compression rate and width of each adjustment area 26B are different according to the value of GBIR represented by the target shape information.

By performing polishing using the polishing pad 26 having such a compression rate distribution, the processing margin of the wafer W polished in each radial region can be gradually reduced toward the outer region, and the shape of the wafer W can be finely controlled.

In addition, a circular area with the center at 0% and the outer edge at 25% can be set as an adjustment area. In addition, a ring-shaped area with the inner edge at 25% and the outer edge at 55% can be set as an unadjusted area. In this case, the processing margin of the center of the wafer W can also be made smaller. By changing the compression rate distribution of the polishing pad 26 as described above, the distribution of the processing margin of the wafer W can be changed within the surface of the wafer W. In addition, by selecting the compression rate distribution according to the shape of the wafer W before polishing, a flatter wafer W can be manufactured.

In the polishing pad adjustment condition calculation step of step S64, the polishing pad adjustment condition calculation unit 533 obtains an adjustment condition for making the compression rate distribution of the polishing pad 26 equal to the compression rate distribution obtained in the compression rate distribution calculation step based on the second correlation information obtained in the correlation information acquisition step.

In the polishing pad adjustment step of step S65, the polishing pad adjustment control unit 534 controls the position adjustment unit 43 and the platen drive unit 27 of the polishing pad adjustment unit 4 based on the adjustment conditions obtained in the polishing pad adjustment condition calculation step, and adjusts the polishing pad 26. Through this polishing pad adjustment step, a polishing pad 26 that can make the shape of the wafer W become the target shape can be obtained.

In the wafer setting step of step S66, the wafer W obtained in the double-sided polishing step is set in the single-sided polishing device 1.

In the polishing step of step S67, the polishing control unit 535 controls the head lifting unit 23, the head driving unit 24, the platen driving unit 27, the wafer pressure adjustment unit 28, and the polishing liquid supply unit 29 of the polishing unit 2 based on the preset polishing conditions, and polishes the wafer W using the polishing pad 26 adjusted in the polishing pad adjustment unit while swinging the polishing head 21. Through this polishing step, a wafer W of a target shape can be obtained.

In the wafer unloading step of step S68, the wafer W is unloaded from the single-side polishing apparatus 1. The unloaded wafer W is cleaned in the cleaning step of step S7.

<Effect of the first embodiment> According to the first embodiment, the single-sided polishing device 1 has the following steps: a compression rate distribution calculation step to obtain the radial compression rate distribution of the polishing pad 26 that can make the polished wafer W become a target shape; a polishing pad adjustment step to adjust the polishing pad 26 to have the obtained compression rate distribution; and a polishing step to polish the wafer W using the adjusted polishing pad 26. In this way, by adjusting the radial compression rate distribution of the polishing pad 26 according to the target shape of the wafer W, the wafer W of the desired shape can be obtained by using the polishing pad 26.

As the polishing pad 26, a suede type polishing pad is used. Therefore, it is possible to easily form a compression rate distribution on the polishing pad 26.

As a method for forming a compression rate distribution on the polishing pad 26, a method is used in which a ring-shaped area having a different compression rate from other areas is formed by pressing a brush 42 against the polishing pad 26 while rotating the suede-type polishing pad 26. Therefore, a compression rate distribution can be formed on the polishing pad 26 by a simple method of rotating the polishing pad 26 using only the brush 42. In particular, by adjusting the suede-type polishing pad 26 using the brush 42 with deformed bristles instead of the structure of the polishing pad 26 that is cut like a grindstone, the compression rate can be finely adjusted efficiently without substantially changing the thickness of the polishing pad 26. In addition, when using a grindstone to adjust the polishing pad 26, although the LPD (Light Point Defect) may be deteriorated due to the grindstone component adhering to the polishing pad 26, the deterioration of LPD can be suppressed by using the brush 42.

When ESFQR is set as an indicator indicating the target shape of the wafer W, the polishing pad adjustment unit 4 preferably forms an annular area on the polishing pad 26 to include a circular unadjusted area 26A and an annular adjustment area 26B having different compression rates. In this case, the adjustment area 26B is formed into an annular shape with a position further outside than the 99% position and further inside than the 100% position as the inner edge, and has a greater compression rate than the unadjusted area 26A. By such a configuration, the shape of the outer peripheral portion of the wafer W can be controlled with high precision.

When GBIR is set as an indicator indicating the target shape of the wafer W, the polishing pad adjustment unit 4 preferably forms an annular area on the polishing pad 26 based on the control of the polishing pad adjustment control unit 534 so that three or more areas with different compression rates are arranged side by side in the radial direction. With such a configuration, the overall shape of the wafer W can be controlled with high precision.

The polishing pad adjustment unit 4 is based on the control of the polishing pad adjustment control unit 534, so that the brush 42 is located at a height position according to the compression rate. Therefore, by a simple method of adjusting the height position of the brush 42, the compression rate of the polishing pad 26 can be controlled with high precision. As a result, the shape of the wafer W can be further controlled with high precision.

[Second embodiment] Next, the second embodiment of the present invention is described. In the second embodiment, a plurality of single-sided polishing devices 1 are used to describe a configuration in which the polished surface W1 of the wafer W is polished into shapes different from each other. In addition, the configuration of the single-sided polishing device 1 used in the second embodiment is the same as that of the single-sided polishing device 1 of the first embodiment, and therefore a method for manufacturing the wafer W including a method for single-sided polishing of the wafer W is described. In addition, in the description of the method for manufacturing the wafer W, the same steps as those in the first embodiment are marked with the same names and symbols and briefly described.

As shown in FIG. 4 , the manufacturing method of the wafer W of the second embodiment differs from the manufacturing method of the first embodiment only in the single-side finishing step (step S9 ) as a finishing step.

As shown in FIG. 7 , the single-sided finishing step of the second embodiment includes: a polishing device preparation step (step S91), a polishing device selection step (step S92), a wafer setting step (step S93), a polishing step (step S67), and a wafer removal step (step S68).

In the polishing device preparation step of step S91, the following steps are performed on the plurality of single-sided polishing devices 1: a relevant information acquisition step (step S61), based on different target shapes, so that the compression rate distributions of the polishing pads 26 possessed by the plurality of single-sided polishing devices 1 are different from each other; a target shape information acquisition step (step S62); a compression rate distribution calculation step (step S63); a polishing pad adjustment condition calculation step (step S64) and a polishing pad adjustment step (step S65). Through this polishing device preparation step, for example, when three single-sided polishing devices 1 are used, by performing each step based on three different target shapes, three single-sided polishing devices 1 having polishing pads 26 with different compression rate distributions can be prepared.

In addition, the first related information and the second related information may be stored in a server device instead of the memory unit 52 of each single-sided polishing device 1, and the information acquisition unit 531 of each single-sided polishing device 1 may acquire the first related information and the second related information from the server device. In addition, the information acquisition unit 531 of each single-sided polishing device 1 may acquire the target shape information from the input unit 51 of each single-sided polishing device 1. In addition, the operator may input the target shape setting to a management device that manages a plurality of single-sided polishing devices 1 together, and the information acquisition unit 531 may acquire the target shape information corresponding to the setting input.

In the polishing device selection step of step S92, a single-sided polishing device 1 for making the wafer W to be polished into a set target shape is selected from a plurality of single-sided polishing devices 1. The selection of the single-sided polishing device 1 may also be performed by the operator inputting the set target shape setting to the management device, and the management device performs the selection based on the information corresponding to the setting input. In addition, the selection of the single-sided polishing device 1 may also be performed based on the judgment of the operator.

In the wafer setting step S93, the wafer W obtained by the double-sided simultaneous polishing process is set in the single-sided polishing device 1 selected in the polishing device selection step.

The polishing step of step S67 and the wafer removal step of step S68 are performed in the single-side polishing device 1 selected in the polishing device selection step.

<Effect of the second embodiment> According to the second embodiment, the radial compression rate distributions of the polishing pads 26 respectively possessed by the plurality of single-sided polishing devices 1 are adjusted to be different from each other, and the wafer W is polished using the single-sided polishing device 1 selected according to the set target shape. Therefore, wafers W of desired shapes different from each other can be obtained at the same time.

[Variations] Although the embodiments of the present invention have been described in detail with reference to the drawings, the specific configuration is not limited to the embodiments, and various improvements and design changes that do not deviate from the gist of the present invention are also included in the present invention.

For example, as a method of forming an annular area having a different compression rate from other areas on the polishing pad 26, although a method of fixing the brush and rotating the polishing pad 26 is exemplified, a circle may be drawn by moving the brush 42 without rotating the polishing pad 26 or while rotating the polishing pad 26.

As a method of adjusting the amount of pressure of the brush 42 relative to the polishing pad 26, although a method of fixing the height position of the polishing pad 26 to adjust the height position of the brush 42 is exemplified, the height position of the brush 42 may be fixed or changed while the height position is changed.

[Example] Next, an example of the present invention will be described. In addition, the present invention is not limited to the example.

[Example 1: Relationship between polishing pad adjustment time and properties of polishing pad after adjustment] First, a single-sided polishing device 1 of the first embodiment is prepared. In addition, a plurality of suede-type polishing pads 26 having the following characteristics are prepared. Thickness of polishing pad 26: 0.94 mm Compression ratio of polishing pad 26: 26.6%

The above-mentioned polishing pad 26 and the brush 42 made of nylon with a length of 5 mm are installed in the single-sided polishing device 1. The horizontal position of the brush 42 is adjusted to adjust the adjustment area 26B shown in Figure 6. At this time, the position of the inner edge of the adjustment area 26B is 99.7% and the position of the outer edge is 120%. In addition, the height position of the brush 42 is adjusted so that the pressing amount of the brush 42 relative to the polishing pad 26 becomes 0.5 mm. The pressing amount of the brush 42 is 0 mm when the tip of the bristles contacts the polishing pad 26 without bending the bristles.

Next, the platen 25 was rotated to perform adjustment for 30 seconds, and the polishing pad 26 of Example 1-1 was obtained. In addition, after the polishing pad 26 of the single-sided polishing device 1 was replaced with the polishing pad 26 that was not adjusted as a whole, the polishing pad 26 was adjusted under the same conditions as the polishing pad 26 of Example 1-1 except that the adjustment time was set to 60 seconds, and the polishing pad 26 of Example 1-2 was obtained.

The thickness and compression rate of the outer periphery (adjustment area) of the polishing pad 26 of Examples 1-1 and 1-2 were measured. The results are shown in Table 1. In addition, the polishing pad 26 of Comparative Example 1 is a polishing pad 26 that is not adjusted as a whole.

[Table 1] Polishing pad Comparison Example 1 Embodiment 1-1 Embodiment 1-2 Adjust time without 30 seconds 60 seconds Thickness of the outer periphery of the polishing pad 0.94mm 0.94mm 0.94mm Compression rate of the outer periphery of the polishing pad 26.6% 27.3% 27.8%

As shown in Table 1, it can be confirmed that, regardless of whether the outer periphery of the polishing pad 26 is adjusted or the length of the adjustment time, the thickness of the outer periphery of the polishing pad 26 is almost the same, and the longer the adjustment time becomes, the greater the compression rate of the polishing pad 26 becomes. Therefore, it can be confirmed that by adjusting the length of the adjustment time, the compression rate can be adjusted without changing the overall thickness of the polishing pad 26.

[Example 2: Relationship between compression rate distribution of polishing pad and shape of wafer after polishing] First, prepare a plurality of wafers W with a diameter of 300 mm and a polished surface W1 having the same shape. In addition, install the polishing pad 26 of Comparative Example 1 (a uniform polishing pad 26 with an overall compression rate of 26.6%) in the single-sided polishing device 1. Then, polish the wafer W under the pre-set polishing conditions to obtain the wafer W of Comparative Example 2. In addition, another wafer W was polished under the same conditions as the wafer W of the comparative example 2 except that the polishing pad 26 of the embodiment 1-1 (the compression rate of the area from the center to the 99.7% position was 26.6%, and the compression rate of the area from the 99.7% position to the 120% position was 27.3%), and the wafer W of the embodiment 2-1 was obtained. Similarly, another wafer W was polished under the same conditions as the wafer W of comparative example 2 except that the polishing pad 26 of embodiment 1-2 (the compression rate of the area from the center to the 99.7% position was 26.6%, and the compression rate of the area from the 99.7% position to the 120% position was 27.8%), and the wafer W of embodiment 2-2 was obtained.

Next, the polishing margin shape of wafer W of comparison example 2 and embodiments 2-1 and 2-2 is measured. The measurement results are shown in FIG. 8. In addition, the horizontal axis of the graph shown in FIG. 8 represents the distance from the center of wafer W, and the vertical axis represents: the differential profile of the thickness of wafer W before and after polishing is calculated and the displacement from the reference surface is calculated in the differential profile by the least square method within the part.

As shown in FIG. 8 , it can be confirmed that the processing margin of the outer periphery of the wafer W of Example 2-2 is the smallest, and the processing margin of the outer periphery of the wafer W of Comparative Example 2 is the largest. In other words, it can be confirmed that the flatness of the outer periphery of the wafer W of Example 2-2 is the highest, and the flatness of the outer periphery of the wafer W of Comparative Example 2 is the lowest.

In addition, ESFQR_max_1mm and ZDD of the polished surface W1 were measured. The measurement results are shown in Table 2. In addition, ESFQR_max_1mm is the maximum displacement of each part when the area outside the range of 1mm from the outer edge of each part is measured.

[Table 2] Wafer Comparison Example 2 Example 2-1 Example 2-2 Compression rate of the outer periphery of the polishing pad 26.6% 27.3% 27.8% ESFQR_max_1mm 26.4nm 24.0nm 21.3nm Polished ZDD −7.2nm −5.9nm −3.9nm

As shown in Table 2, it can be confirmed that the absolute values of ESFQR_max_1mm and ZDD of Example 2-2 are the smallest, and the absolute values of ESFQR_max_1mm and ZDD of Comparative Example 2 are the largest.

From the results shown in FIG. 8 and Table 2, it can be confirmed that if the compression rate of the outer periphery of the polishing pad 26 is set larger than that of the inner area, the processing margin of the outer periphery will be reduced and the flatness of the polished surface W1 will be increased.

[Example 3: Relationship between the amount of pressure of the brush relative to the polishing pad and the properties of the adjusted polishing pad] First, a plurality of suede-type polishing pads 26 having the following properties are prepared. Thickness of polishing pad 26: 0.93 mm Compression ratio of polishing pad 26: 24.7%

The polishing pad 26 and the brush 42 made of nylon with a length of 5 mm were installed in the single-side polishing device 1. The horizontal position of the brush 42 was adjusted to adjust the adjustment area 26B of the same position and shape as in Example 1. In addition, the height position of the brush 42 was adjusted so that the pressing amount of the brush 42 relative to the polishing pad 26 became 0.5 mm.

Then, the platen 25 was rotated for 30 seconds to perform adjustment, and the polishing pad 26 of Example 3-1 was obtained. In addition, after the polishing pad 26 of the single-sided polishing device 1 was replaced with a polishing pad 26 that was not adjusted as a whole, it was adjusted under the same conditions as the polishing pad 26 of Example 3-1 except that the pressing amount was set to 0.8 mm, and the polishing pad 26 of Example 3-2 was obtained. Furthermore, after replacing the polishing pad 26 of the single-sided polishing device 1 with a polishing pad 26 that has not been adjusted as a whole, the polishing pad 26 of Example 3-1 is adjusted under the same conditions except that the pressing amount is set to 1.1 mm, thereby obtaining the polishing pad 26 of Example 3-3.

The thickness and compression rate of the outer periphery (adjustment area) of the polishing pad 26 of Examples 3-1, 3-2, and 3-3 were measured. The results are shown in Table 3. In addition, the polishing pad 26 of Comparative Example 3 is a polishing pad 26 that is not adjusted as a whole.

[Table 3] Polishing pad Comparison Example 3 Example 3-1 Example 3-2 Embodiment 3-3 Press pressure without 0.5mm 0.8mm 1.1mm Thickness of the outer periphery of the polishing pad 0.93mm 0.93mm 0.93mm 0.93mm Compression rate of the outer periphery of the polishing pad 24.7% 26.5% 26.8% 27.2%

As shown in Table 3, it can be confirmed that, regardless of whether the outer periphery of the polishing pad 26 is adjusted or the amount of pressure applied by the brush 42, while the thickness of the outer periphery of the polishing pad 26 is almost the same, the compression rate of the polishing pad 26 increases as the amount of pressure applied increases. Therefore, it can be confirmed that by adjusting the amount of pressure applied by the brush 42 relative to the polishing pad 26, the compression rate can be adjusted without changing the overall thickness of the polishing pad 26. Furthermore, if the results of Example 1 are considered, it can be confirmed that: in addition to the amount of pressure of the brush 42 relative to the polishing pad 26, by adjusting the length of the adjustment time, the compression rate can be adjusted more finely without changing the overall thickness of the polishing pad 26.

[Example 4: Relationship between the amount of pressure of the brush relative to the polishing pad and the shape of the wafer after polishing] First, prepare a plurality of wafers W having a diameter of 300 mm and a polished surface W1 having the same shape. In addition, the polishing pad 26 of Comparative Example 3 (a uniform polishing pad 26 with an overall compression rate of 24.7%) is mounted on the single-sided polishing device 1. Then, the wafer W is polished under the same polishing conditions as in Example 2 to obtain a wafer W of Comparative Example 4. In addition, another wafer W was polished under the same conditions as the wafer W of the comparative example 4 except that the polishing pad 26 of the embodiment 3-1 (the compression rate of the area from the center to the 99.7% position was 24.7%, and the compression rate of the area from the 99.7% position to the 120% position was 26.5%), and the wafer W of the embodiment 4-1 was obtained. Similarly, another wafer W was polished under the same conditions as the wafer W of the comparative example 4 except that the polishing pad 26 of the embodiment 3-2 (the compression rate of the area from the center to the 99.7% position was 24.7%, and the compression rate of the area from the 99.7% position to the 120% position was 26.8%), and the wafer W of the embodiment 4-2 was obtained. In addition, another wafer W was polished under the same conditions as the wafer W of the comparative example 4 except that the polishing pad 26 of the embodiment 3-3 (the compression rate of the area from the center to the 99.7% position was 24.7%, and the compression rate of the area from the 99.7% position to the 120% position was 27.2%), and the wafer W of the embodiment 4-3 was obtained.

Next, the ESFQR_max_1mm and the ZDD of the polished surface W1 of the wafer W of Comparative Example 4 and Examples 3-1, 3-2, and 3-3 were measured. The measurement results are shown in Table 4.

[Table 4] Wafer Comparison Example 4 Example 4-1 Example 4-2 Example 4-3 Compression rate of the outer periphery of the polishing pad 24.7% 26.5% 26.8% 27.2% ESFQR_max_1mm 27.5nm 24.6nm 23.0nm 21.9nm Polished ZDD −9.8nm −7.2nm −5.6nm −3.7nm

As shown in Table 4, it can be confirmed that the absolute values of ESFQR_max_1mm and ZDD decrease in the order of Comparative Example 4, Example 4-1, Example 4-2, and Example 4-3. Therefore, it can be confirmed that, similar to Example 2, if the compression rate of the outer periphery of the polishing pad 26 is greater than that of the inner area, the processing margin of the outer periphery will be reduced, and the flatness of the polished surface W1 will be increased.

1: Single-sided polishing device 2: Polishing unit 4: Polishing pad adjustment unit 5: Control unit 21: Polishing head 22: Head holding unit 23: Head lifting unit 24: Head drive unit (rotation drive unit) 25: Platen 26: Polishing pad 26A: Unadjusted area 26B: Adjustment area 27: Platen drive unit (rotation drive unit) 28: Wafer pressure adjustment unit 29: Polishing liquid supply unit 41: Brush holding unit 42: Brush 43: Position adjustment unit 51: Input unit 52: Memory unit 53: Control unit 211: Back pad 212: Retaining ring 213: Head rotating part 251: Fixed plate rotating shaft part 260: Unadjusted area 261: 1st adjustment area 262: 2nd adjustment area 263: 3rd adjustment area 264: 4th adjustment area 265: 5th adjustment area 291: Nozzle 411: Rotating shaft part 412: Retaining arm 531: Information acquisition part 532: Compression rate distribution calculation part 533: Polishing pad adjustment condition calculation part 534: Polishing pad adjustment control part 535: Polishing control part C: Rotation center D: Rotation axis S1, S2, S3, S4, S5, S6, S7, S8, S9, S61, S62, S63, S64, S65, S66, S67, S68, S91, S92, S93: Steps W: Wafer W1: Polished surface

FIG. 1 is a schematic diagram showing the schematic configuration of the single-sided polishing device of the first and second embodiments. FIG. 2 is a plan view showing the adjustment method of the polishing pad of the first and second embodiments. FIG. 3 is a block diagram showing the schematic configuration of the control device of the first and second embodiments. FIG. 4 is a flow chart showing the wafer manufacturing method of the first and second embodiments. FIG. 5 is a flow chart showing the single-sided finishing step of the first embodiment. FIG. 6 is a schematic diagram showing an example of the compression rate distribution of the polishing pad of the first and second embodiments. FIG. 7 is a flow chart showing the single-sided finishing step of the second embodiment. FIG. 8 is a graph showing the relationship between the compression rate distribution of the polishing pad of Example 2 and the shape of the wafer after polishing.

S6, S61, S62, S63, S64, S65, S66, S67, S68: Steps

Claims (12)

A single-sided polishing method for a wafer comprises pressing a wafer held in a polishing head against a suede-type polishing pad larger than the wafer, and using a single-sided polishing device that rotates the polishing head and the polishing pad to polish the wafer, comprising: a compression rate distribution calculation step of obtaining a radial compression rate distribution of the polishing pad according to a target shape of the wafer after polishing; a polishing pad adjustment step of adjusting the polishing pad to have the compression rate distribution; and a polishing step of polishing the wafer using the polishing pad having the compression rate distribution. A single-sided polishing method for a wafer as described in claim 1, wherein the polishing pad adjustment step presses the brush against the polishing pad while rotating the polishing pad, thereby forming an annular area having a compression rate different from other areas on the polishing pad. A single-sided polishing method for a wafer as described in claim 2, wherein the polishing pad adjustment step forms the annular region so that the thickness of the region having the compression rate distribution is substantially equal. A single-sided polishing method for a wafer as described in claim 2 or claim 3, wherein the polishing step is to polish the wafer when the wafer is located at a position further outward than the rotation center of the polishing pad, and the polishing pad adjustment step uses the brush to form an annular area, and the annular area is an area where the position further outward than the 99% position and further inward than the 100% position is set as the inner edge, when the rotation center of the polishing pad is set as the 0% position and the position on the outer edge of the wafer farthest from the rotation center is set as the 100% position, and the compression rate is greater than that of the inner area. A single-sided polishing method for a wafer as described in claim 4, wherein the target shape indicator of the wafer is ESFQR. A single-sided polishing method for a wafer as described in claim 2 or claim 3, wherein the polishing step is to polish the wafer in a state where the wafer is located at a position further outward than the rotation center of the polishing pad, and the polishing pad adjustment step uses the brush to form an annular area so that three or more areas with different compression rates are arranged side by side in the radial direction, and the third area from the inner side of the three or more areas with different compression rates is an annular area with a position further inward than the 100% position set as the inner edge when the rotation center of the polishing pad is set as 0% and the position on the outer edge of the wafer farthest from the rotation center is set as 100%. A single-sided polishing method for a wafer as described in claim 6, wherein the target shape indicator of the wafer is GBIR. The single-sided polishing method of a wafer as recited in claim 1 comprises: a polishing device preparation step, in which the compression rate distribution calculation step and the polishing pad adjustment step are performed on a plurality of the aforementioned single-sided polishing devices based on the aforementioned target shapes that are different from each other, so that the compression rate distributions of the aforementioned polishing pads respectively possessed by the plurality of the aforementioned single-sided polishing devices become different from each other; and a polishing device selection step, in which the aforementioned single-sided polishing device that can make the wafer to be polished become the set target shape is selected from the plurality of the aforementioned single-sided polishing devices, wherein the aforementioned polishing step uses the aforementioned single-sided polishing device selected in the aforementioned polishing device selection step to polish the aforementioned wafer. A method for manufacturing a wafer comprises: a finishing step for finishing the aforementioned wafer, wherein in the aforementioned finishing step, the aforementioned wafer is polished by the single-side polishing method of the wafer described in claim 1. A single-sided polishing device for a wafer, which presses a wafer held in a polishing head against a suede-shaped polishing pad larger than the wafer, and rotates the polishing head and the polishing pad to polish the wafer, comprises: a polishing pad adjustment unit for adjusting the polishing pad; a rotation drive unit for rotating the polishing head and the polishing pad; and a control device, wherein the control device The apparatus is provided with: a compression rate distribution calculation unit for calculating the radial compression rate distribution of the polishing pad according to the target shape of the wafer after polishing; a polishing pad adjustment control unit for controlling the polishing pad adjustment unit to adjust the polishing pad to have the compression rate distribution; and a polishing control unit for controlling the rotation drive unit to polish the wafer using the polishing pad having the compression rate distribution. The single-sided polishing device of the wafer as recited in claim 10, wherein the polishing pad adjustment unit has a brush, and the polishing pad adjustment control unit controls the polishing pad adjustment unit to press the brush against the polishing pad while rotating the polishing pad, thereby forming an annular area having a compression rate different from other areas. The single-sided polishing device for wafers as described in claim 11, wherein the polishing pad adjustment unit has a position adjustment unit for adjusting the position of the brush, and the polishing pad adjustment control unit controls the position adjustment unit so that the brush is located at a height position according to the compression rate.