TWI849543B - Narrow border reflective display device - Google Patents
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- TWI849543B TWI849543B TW111140171A TW111140171A TWI849543B TW I849543 B TWI849543 B TW I849543B TW 111140171 A TW111140171 A TW 111140171A TW 111140171 A TW111140171 A TW 111140171A TW I849543 B TWI849543 B TW I849543B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0202—Addressing of scan or signal lines
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
Description
本揭露是有關於一種具有窄邊框的反射式顯示裝置。The present disclosure relates to a reflective display device with a narrow bezel.
現今顯示裝置中的驅動方式需要藉由覆晶薄膜製程將軟性電路板以及驅動積體電路(IC)與TFT基板電性連接。然而,軟性電路板的彎折區以及用於接合軟性電路板的接合墊皆使得顯示裝置的邊框區的尺寸難以縮減。此外,穿戴視的顯示裝置的外型需求多變,上述的製造方式難以符合具有任意形狀的顯示裝置的需求。The current driving method in display devices requires the FPC and driver integrated circuit (IC) to be electrically connected to the TFT substrate through a chip-on-film process. However, the bending area of the FPC and the bonding pads used to bond the FPC make it difficult to reduce the size of the border area of the display device. In addition, the appearance requirements of wearable display devices vary, and the above manufacturing method is difficult to meet the requirements of display devices with arbitrary shapes.
有鑑於此,如何提供一種可解決上述問題的顯示裝置,仍是本領域努力研發的目標。In view of this, how to provide a display device that can solve the above problems is still a goal of research and development in this field.
本揭露之一技術態樣為一種窄邊框反射式顯示裝置 。One technical aspect of the present disclosure is a narrow-frame reflective display device.
在本揭露一實施例中,窄邊框反射式顯示裝置包含驅動電路基板、薄膜電晶體陣列基板、前面板疊構、導電線、蓋板以及封膠。薄膜電晶體陣列基板位在驅動電路基板上。薄膜電晶體陣列基板位在驅動電路基板與前面板疊構之間。導電線電性連接驅動電路基板與薄膜電晶體陣列基板。蓋板位在前面板疊構上。封膠包圍驅動電路基板、薄膜電晶體陣列基板、前面板疊構以及導電線。In one embodiment of the present disclosure, a narrow-frame reflective display device includes a driving circuit substrate, a thin film transistor array substrate, a front panel stack, a conductive wire, a cover plate, and a sealing adhesive. The thin film transistor array substrate is located on the driving circuit substrate. The thin film transistor array substrate is located between the driving circuit substrate and the front panel stack. The conductive wire electrically connects the driving circuit substrate and the thin film transistor array substrate. The cover plate is located on the front panel stack. The sealing adhesive surrounds the driving circuit substrate, the thin film transistor array substrate, the front panel stack, and the conductive wire.
在本揭露一實施例中,蓋板具有面對驅動電路基板的第一表面,且驅動電路基板於第一表面上的垂直投影位在第一表面的範圍內。In an embodiment of the present disclosure, the cover has a first surface facing the driving circuit substrate, and a vertical projection of the driving circuit substrate on the first surface is located within the range of the first surface.
在本揭露一實施例中,薄膜電晶體陣列基板包含顯示區與環繞顯示區的周邊區,顯示區與周邊區之間具有交界,蓋板具有邊緣。於俯視圖中,薄膜電晶體陣列基板的交界在蓋板上的垂直投影至蓋板的邊緣的距離小於2.5毫米。In an embodiment of the present disclosure, the thin film transistor array substrate includes a display area and a peripheral area surrounding the display area, the display area and the peripheral area have a boundary, and the cover plate has an edge. In a top view, the distance from the vertical projection of the boundary of the thin film transistor array substrate on the cover plate to the edge of the cover plate is less than 2.5 mm.
在本揭露一實施例中,薄膜電晶體陣列基板還包含多個第一導電墊,驅動電路基板還包含多個第二導電墊,且導電線分別電性連接第一導電墊與第二導電墊。In an embodiment of the present disclosure, the thin film transistor array substrate further includes a plurality of first conductive pads, the driving circuit substrate further includes a plurality of second conductive pads, and the conductive lines electrically connect the first conductive pads and the second conductive pads respectively.
在本揭露一實施例中,驅動電路基板具有面對薄膜電晶體陣列基板的第二表面,第一導電墊位在第二表面上,且第一導電墊圍繞薄膜電晶體陣列基板。In one embodiment of the present disclosure, the driving circuit substrate has a second surface facing the thin film transistor array substrate, the first conductive pad is located on the second surface, and the first conductive pad surrounds the thin film transistor array substrate.
在本揭露一實施例中,薄膜電晶體陣列基板具有面對前面板疊構的第三表面,第二導電墊位在第三表面上,且第二導電墊圍繞前面板疊構。In an embodiment of the present disclosure, the thin film transistor array substrate has a third surface facing the front panel stacking structure, the second conductive pad is located on the third surface, and the second conductive pad surrounds the front panel stacking structure.
在本揭露一實施例中,薄膜電晶體陣列基板的材料包含保護層、聚醯亞胺薄膜與位在保護層與聚醯亞胺薄膜之間的黏著層。In one embodiment of the present disclosure, the material of the thin film transistor array substrate includes a protective layer, a polyimide film, and an adhesive layer between the protective layer and the polyimide film.
在本揭露一實施例中,薄膜電晶體陣列基板的材料包含玻璃。In one embodiment of the present disclosure, the material of the thin film transistor array substrate includes glass.
在本揭露一實施例中,驅動電路基板的材料包含保護層、聚醯亞胺薄膜與位在保護層與聚醯亞胺薄膜之間的黏著層。In one embodiment of the present disclosure, the material of the driving circuit substrate includes a protective layer, a polyimide film, and an adhesive layer between the protective layer and the polyimide film.
在本揭露一實施例中,驅動電路基板的材料包含玻璃。In an embodiment of the present disclosure, the material of the driving circuit substrate includes glass.
在本揭露一實施例中,驅動電路基板具有面對薄膜電晶體陣列基板的第二表面,窄邊框反射式顯示裝置還包含軟性電路板與晶片,其中軟性電路板(Flexible Printed Circuit board,FPC)接合於驅動電路基板的第二表面上,且晶片接合於軟性電路板上。In an embodiment of the present disclosure, the driving circuit substrate has a second surface facing the thin film transistor array substrate, and the narrow frame reflective display device further includes a flexible circuit board and a chip, wherein the flexible printed circuit board (FPC) is bonded to the second surface of the driving circuit substrate, and the chip is bonded to the flexible circuit board.
在本揭露一實施例中,蓋板具有面對驅動電路基板的第一表面,且於俯視圖中,軟性電路板與晶片於蓋板的第一表面上的垂直投影位在第一表面的範圍內。In one embodiment of the present disclosure, the cover has a first surface facing the driving circuit substrate, and in a top view, the vertical projections of the flexible circuit board and the chip on the first surface of the cover are located within the range of the first surface.
在本揭露一實施例中,驅動電路基板具有背對薄膜電晶體陣列基板的第四表面,驅動電路基板為印刷電路板(Printed Circuit Board,PCB)或者軟性電路板,且窄邊框反射式顯示裝置還包含接合於驅動電路基板的第四表面上的晶片。In an embodiment of the present disclosure, the driving circuit substrate has a fourth surface facing away from the thin film transistor array substrate. The driving circuit substrate is a printed circuit board (PCB) or a flexible circuit board, and the narrow frame reflective display device further includes a chip bonded to the fourth surface of the driving circuit substrate.
在本揭露一實施例中,封膠包圍且覆蓋驅動電路基板的側表面。In one embodiment of the present disclosure, the encapsulant surrounds and covers the side surface of the driving circuit substrate.
在上述實施例中,透過堆疊薄膜電晶體陣列基板與驅動電路基板,並藉由導電線電性連接分佈於邊框區的第一導電墊以及第二導電墊,可使軟性電路板無需接合在薄膜電晶體陣列基板上。換句話說,邊框區的寬度僅需考慮第一導電墊以及第二導電墊之間的間距即可,因此可縮減窄邊框反射式顯示裝置的邊框區的寬度。此外,邊框區的形狀可根據顯示區的形狀而定,因此窄邊框反射式顯示裝置可具有客製化的形狀。In the above embodiment, by stacking the thin film transistor array substrate and the driving circuit substrate, and electrically connecting the first conductive pad and the second conductive pad distributed in the frame area through conductive lines, the flexible circuit board does not need to be bonded to the thin film transistor array substrate. In other words, the width of the frame area only needs to consider the distance between the first conductive pad and the second conductive pad, so the width of the frame area of the narrow frame reflective display device can be reduced. In addition, the shape of the frame area can be determined according to the shape of the display area, so the narrow frame reflective display device can have a customized shape.
以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。且為了清楚起見,圖式中之層和區域的厚度可能被誇大,並且在圖式的描述中相同的元件符號表示相同的元件。The following will disclose multiple embodiments of the present invention with drawings. For the purpose of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is to say, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some commonly used structures and components will be depicted in the drawings in a simple schematic manner. And for the sake of clarity, the thickness of the layers and regions in the drawings may be exaggerated, and the same element symbols represent the same elements in the description of the drawings.
第1圖為根據本揭露一實施例的窄邊框反射式顯示裝置100的上視圖。第2圖為沿著第1圖中的線段2-2'的剖面圖。同時參照第1圖及第2圖。第2圖左邊的邊框區BR,為具有導電線140的電性連接區之圖示,右邊的邊框區BR為軟性電路板180接合區之圖示。窄邊框反射式顯示裝置100包含驅動電路基板110、薄膜電晶體(Thin film transistor,TFT)陣列基板120、前面板疊構(Front panel laminate,FPL)130、導電線140、蓋板150以及封膠160。薄膜電晶體陣列基板120位在驅動電路基板110上,前面板疊構130位在薄膜電晶體陣列基板120上。薄膜電晶體陣列基板120位在驅動電路基板110與前面板疊構130之間。導電線140電性連接驅動電路基板110與薄膜電晶體陣列基板120。蓋板150位在前面板疊構130上。封膠160包圍驅動電路基板110、薄膜電晶體陣列基板120、前面板疊構130以及導電線140,且封膠160位在蓋板150與驅動電路基板110之間以及蓋板150與薄膜電晶體陣列基板120之間。封膠160包圍且覆蓋驅動電路基板110的一側表面1101。FIG. 1 is a top view of a narrow-frame reflective display device 100 according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view along line segment 2-2' in FIG. 1. Refer to FIG. 1 and FIG. 2 simultaneously. The frame area BR on the left side of FIG. 2 is a diagram of an electrical connection area having a conductive line 140, and the frame area BR on the right side is a diagram of a bonding area of a flexible circuit board 180. The narrow-frame reflective display device 100 includes a driving circuit substrate 110, a thin film transistor (TFT) array substrate 120, a front panel laminate (FPL) 130, a conductive line 140, a cover plate 150, and a sealing glue 160. The thin film transistor array substrate 120 is located on the driving circuit substrate 110, and the front panel stack 130 is located on the thin film transistor array substrate 120. The thin film transistor array substrate 120 is located between the driving circuit substrate 110 and the front panel stack 130. The conductive line 140 electrically connects the driving circuit substrate 110 and the thin film transistor array substrate 120. The cover plate 150 is located on the front panel stack 130. The encapsulant 160 surrounds the driving circuit substrate 110, the thin film transistor array substrate 120, the front panel stack 130 and the conductive line 140, and the encapsulant 160 is located between the cover plate 150 and the driving circuit substrate 110 and between the cover plate 150 and the thin film transistor array substrate 120. The encapsulant 160 surrounds and covers a side surface 1101 of the driving circuit substrate 110.
同時參照第1圖及第2圖。蓋板150的面積大於驅動電路基板110的面積。蓋板150具有邊緣1002,且蓋板150的邊緣1002即為窄邊框反射式顯示裝置100的邊緣。也就是說,蓋板150的面積也大於薄膜電晶體陣列基板120的面積以及前面板疊構130的面積。Refer to FIG. 1 and FIG. 2 at the same time. The area of the cover plate 150 is larger than the area of the driving circuit substrate 110. The cover plate 150 has an edge 1002, and the edge 1002 of the cover plate 150 is the edge of the narrow frame reflective display device 100. In other words, the area of the cover plate 150 is also larger than the area of the thin film transistor array substrate 120 and the area of the front panel stack 130.
參照第2圖。蓋板150具有面對驅動電路基板110的第一表面1502。驅動電路基板110於第一表面1502上的垂直投影位在第一表面1502的範圍內。薄膜電晶體陣列基板120與前面板疊構130於第一表面1502上的垂直投影位在第一表面1502的範圍內。換句話說,驅動電路基板110、薄膜電晶體陣列基板120、前面板疊構130、導電線140以及封膠160在垂直方向Y上與蓋板150完全重疊。Refer to FIG. 2. The cover plate 150 has a first surface 1502 facing the driving circuit substrate 110. The vertical projection of the driving circuit substrate 110 on the first surface 1502 is within the range of the first surface 1502. The vertical projections of the thin film transistor array substrate 120 and the front panel stack 130 on the first surface 1502 are within the range of the first surface 1502. In other words, the driving circuit substrate 110, the thin film transistor array substrate 120, the front panel stack 130, the conductive line 140 and the sealing glue 160 completely overlap with the cover plate 150 in the vertical direction Y.
參照第2圖。窄邊框反射式顯示裝置100還包含另一黏著層170,位在驅動電路基板110與薄膜電晶體陣列基板120之間。黏著層170為雙面膠,配置以黏合驅動電路基板110與薄膜電晶體陣列基板120。黏著層170的材料可為有機材料或無機材料。Refer to FIG. 2 . The narrow frame reflective display device 100 further includes another adhesive layer 170 located between the driving circuit substrate 110 and the thin film transistor array substrate 120 . The adhesive layer 170 is a double-sided adhesive configured to bond the driving circuit substrate 110 and the thin film transistor array substrate 120 . The material of the adhesive layer 170 can be an organic material or an inorganic material.
參照第2圖。在本實施例中,窄邊框反射式顯示裝置100為可撓式的反射式顯示裝置。驅動電路基板110與薄膜電晶體陣列基板120具有可撓性。驅動電路基板110包含聚醯亞胺薄膜112、保護層114以及黏著層116。黏著層116位在保護層114與聚醯亞胺薄膜112之間。黏著層116配置以黏合保護層114與聚醯亞胺薄膜112。舉例來說,窄邊框反射式顯示裝置100為鐘錶,驅動電路基板110中整合了應用於鐘錶的系統組件,例如馬達、電池等。Refer to FIG. 2. In this embodiment, the narrow-frame reflective display device 100 is a flexible reflective display device. The driving circuit substrate 110 and the thin film transistor array substrate 120 are flexible. The driving circuit substrate 110 includes a polyimide film 112, a protective layer 114, and an adhesive layer 116. The adhesive layer 116 is located between the protective layer 114 and the polyimide film 112. The adhesive layer 116 is configured to bond the protective layer 114 and the polyimide film 112. For example, the narrow-frame reflective display device 100 is a watch, and the driving circuit substrate 110 integrates system components used in the watch, such as a motor, a battery, etc.
薄膜電晶體陣列基板120包含聚醯亞胺薄膜122、保護層124以及黏著層126。黏著層126位在保護層124與聚醯亞胺薄膜122之間。黏著層126配置以黏合保護層124與聚醯亞胺薄膜122。薄膜電晶體陣列基板120還包含形成在聚醯亞胺薄膜122上的閘極、汲極/源極、絕緣層以及像素電極等結構(圖未示)。The thin film transistor array substrate 120 includes a polyimide film 122, a protective layer 124, and an adhesive layer 126. The adhesive layer 126 is located between the protective layer 124 and the polyimide film 122. The adhesive layer 126 is configured to bond the protective layer 124 and the polyimide film 122. The thin film transistor array substrate 120 also includes structures such as a gate, a drain/source, an insulating layer, and a pixel electrode formed on the polyimide film 122 (not shown).
前面板疊構130中包含顯示介質層132、透明導電膜134以及光學膠層136。透明導電膜134位在顯示介質層132與光學膠層136之間。顯示介質層132例如為電子墨水層。The front panel stack 130 includes a display medium layer 132, a transparent conductive film 134, and an optical adhesive layer 136. The transparent conductive film 134 is located between the display medium layer 132 and the optical adhesive layer 136. The display medium layer 132 is, for example, an electronic ink layer.
驅動電路基板110的保護層114以及薄膜電晶體陣列基板120的保護層124配置以提供聚醯亞胺薄膜112與聚醯亞胺薄膜122支撐力。保護層114、124的材料可包含不鏽鋼、鈦合金、陶瓷材料或是玻璃等,但本揭露不以此為限。保護層114、124具有可撓性,且保護層114、124的硬度大於等於玻璃的硬度。舉例來說,保護層114、124可以是厚度約為0.1毫米的玻璃。驅動電路基板110的黏著層116以及薄膜電晶體陣列基板120的黏著層126為雙面膠。黏著層116、126的材料可為有機材料或無機材料。The protective layer 114 of the driving circuit substrate 110 and the protective layer 124 of the thin film transistor array substrate 120 are configured to provide support for the polyimide film 112 and the polyimide film 122. The material of the protective layers 114 and 124 may include stainless steel, titanium alloy, ceramic material or glass, etc., but the present disclosure is not limited thereto. The protective layers 114 and 124 are flexible, and the hardness of the protective layers 114 and 124 is greater than or equal to the hardness of glass. For example, the protective layers 114 and 124 can be glass with a thickness of about 0.1 mm. The adhesive layer 116 of the driving circuit substrate 110 and the adhesive layer 126 of the thin film transistor array substrate 120 are double-sided tape. The material of the adhesive layers 116 and 126 can be an organic material or an inorganic material.
第3圖為第1圖中的窄邊框反射式顯示裝置100省略蓋板150與封膠160後的上視圖。同時參照第2圖與第3圖。薄膜電晶體陣列基板120具有顯示區AA與環繞顯示區AA的周邊區PA。薄膜電晶體陣列基板120的顯示區AA與周邊區PA之間具有交界1204。驅動電路基板110的面積大於薄膜電晶體陣列基板120的面積,且薄膜電晶體陣列基板120的面積大於前面板疊構130的面積。如第1圖與第2圖所示,交界1204在蓋板150上的垂直投影至蓋板150的邊緣1002的範圍為窄邊框反射式顯示裝置100的邊框區BR。FIG. 3 is a top view of the narrow-frame reflective display device 100 in FIG. 1 without the cover plate 150 and the sealant 160. Refer to FIG. 2 and FIG. 3 at the same time. The thin film transistor array substrate 120 has a display area AA and a peripheral area PA surrounding the display area AA. The display area AA and the peripheral area PA of the thin film transistor array substrate 120 have a boundary 1204. The area of the driving circuit substrate 110 is larger than the area of the thin film transistor array substrate 120, and the area of the thin film transistor array substrate 120 is larger than the area of the front panel stack 130. As shown in FIG. 1 and FIG. 2 , the vertical projection of the boundary 1204 on the cover plate 150 to the edge 1002 of the cover plate 150 is the frame area BR of the narrow-frame reflective display device 100 .
同時參照第2圖與第3圖。驅動電路基板110還包含多個第一導電墊118,薄膜電晶體陣列基板120還包含多個第二導電墊128。導電線140分別電性連接第一導電墊118與第二導電墊128。驅動電路基板110具有面對薄膜電晶體陣列基板120的第二表面1102。第一導電墊118位在第二表面1102上。薄膜電晶體陣列基板120在驅動電路基板110上的垂直投影與第一導電墊118無重疊。第一導電墊118圍繞薄膜電晶體陣列基板120。薄膜電晶體陣列基板120具有面對前面板疊構130的第三表面1202。第二導電墊128位在第三表面1202上。前面板疊構130在薄膜電晶體陣列基板120上的垂直投影與第二導電墊128無重疊。第二導電墊128圍繞前面板疊構130。Refer to FIG. 2 and FIG. 3 simultaneously. The driving circuit substrate 110 further includes a plurality of first conductive pads 118, and the thin film transistor array substrate 120 further includes a plurality of second conductive pads 128. The conductive lines 140 electrically connect the first conductive pads 118 and the second conductive pads 128, respectively. The driving circuit substrate 110 has a second surface 1102 facing the thin film transistor array substrate 120. The first conductive pad 118 is located on the second surface 1102. The vertical projection of the thin film transistor array substrate 120 on the driving circuit substrate 110 does not overlap with the first conductive pad 118. The first conductive pad 118 surrounds the thin film transistor array substrate 120. The TFT array substrate 120 has a third surface 1202 facing the front panel stack 130. The second conductive pad 128 is located on the third surface 1202. The vertical projection of the front panel stack 130 on the TFT array substrate 120 does not overlap with the second conductive pad 128. The second conductive pad 128 surrounds the front panel stack 130.
參照第2圖,窄邊框反射式顯示裝置100還包含軟性電路板(Flexible Printed Circuit board,FPC)180與晶片182。軟性電路板180接合於驅動電路基板110的第二表面1102上,且晶片182接合於軟性電路板180上。薄膜電晶體陣列基板120透過導電線140以及軟性電路板180與晶片182電性連接以驅動窄邊框反射式顯示裝置100。軟性電路板180彎折至驅動電路基板110的下方。軟性電路板180與晶片182於蓋板150的第一表面1502上的垂直投影位在第一表面1502的範圍內。換句話說,軟性電路板180無突出於蓋板150的邊緣1002。Referring to FIG. 2 , the narrow-frame reflective display device 100 further includes a flexible printed circuit board (FPC) 180 and a chip 182. The flexible printed circuit board 180 is bonded to the second surface 1102 of the driving circuit substrate 110, and the chip 182 is bonded to the flexible printed circuit board 180. The thin film transistor array substrate 120 is electrically connected to the chip 182 through the conductive wire 140 and the flexible printed circuit board 180 to drive the narrow-frame reflective display device 100. The flexible printed circuit board 180 is bent to the bottom of the driving circuit substrate 110. The vertical projections of the flexible printed circuit board 180 and the chip 182 on the first surface 1502 of the cover plate 150 are located within the range of the first surface 1502. In other words, the flexible circuit board 180 does not protrude from the edge 1002 of the cover board 150 .
除此之外,軟性電路板180的彎折區BD位在薄膜電晶體陣列基板120的下方,且軟性電路板180在薄膜電晶體陣列基板120的垂直投影與周邊區PA重疊。因此,軟性電路板180的彎折區BD不會佔據薄膜電晶體陣列基板120外側的空間。此外,上述的設計無需設置明顯突出的接合區於薄膜電晶體陣列基板120的第三表面1202上以接合軟性電路板180。因此,上述的配置可縮減薄膜電晶體陣列基板120的周邊區PA的寬度。In addition, the bending area BD of the flexible circuit board 180 is located below the thin film transistor array substrate 120, and the vertical projection of the flexible circuit board 180 on the thin film transistor array substrate 120 overlaps with the peripheral area PA. Therefore, the bending area BD of the flexible circuit board 180 does not occupy the space outside the thin film transistor array substrate 120. In addition, the above design does not need to set a significantly protruding bonding area on the third surface 1202 of the thin film transistor array substrate 120 to bond the flexible circuit board 180. Therefore, the above configuration can reduce the width of the peripheral area PA of the thin film transistor array substrate 120.
在一些實施例中,一部份的軟性電路板180在薄膜電晶體陣列基板120的垂直投影可與顯示區AA重疊。由於驅動電路基板110位在薄膜電晶體陣列基板120下方,軟性電路板180的設計並不影響顯示區AA的顯示效果。In some embodiments, a portion of the flexible circuit board 180 may overlap the display area AA in a vertical projection on the thin film transistor array substrate 120. Since the driving circuit substrate 110 is located below the thin film transistor array substrate 120, the design of the flexible circuit board 180 does not affect the display effect of the display area AA.
在第3圖中,僅示例性地繪示一部份的導電線140。第一導電墊118與第二導電墊128的尺寸大小以及間距並不限於第3圖中的態樣。在一些實施例中,可設置虛設的導電墊,且虛設的導電墊不與導電線電性連接。In FIG. 3, only a portion of the conductive line 140 is shown for example. The size and spacing of the first conductive pad 118 and the second conductive pad 128 are not limited to those shown in FIG. 3. In some embodiments, a dummy conductive pad may be provided, and the dummy conductive pad is not electrically connected to the conductive line.
在本實施例中,第一導電墊118與第二導電墊128平均地分佈於窄邊框反射式顯示裝置100的邊框區BR。換句話說,第一導電墊118與第二導電墊128圍繞顯示區AA。如第3圖所示,在本實施例中,第一導電墊118的分布範圍接近環形(例如,330度)。軟性電路板180的設置位置是位在窄邊框反射式顯示裝置100的上方,但本揭露不以此為限。舉例來說,在其他實施例中,第一導電墊118的分布範圍較小(例如,180度),則軟性電路板的設置位置可位在不具有第一導電墊118的任一位置。In the present embodiment, the first conductive pad 118 and the second conductive pad 128 are evenly distributed in the frame area BR of the narrow-frame reflective display device 100. In other words, the first conductive pad 118 and the second conductive pad 128 surround the display area AA. As shown in FIG. 3 , in the present embodiment, the distribution range of the first conductive pad 118 is close to a ring (e.g., 330 degrees). The flexible circuit board 180 is set above the narrow-frame reflective display device 100, but the present disclosure is not limited thereto. For example, in other embodiments, the distribution range of the first conductive pad 118 is smaller (e.g., 180 degrees), and the flexible circuit board can be set at any position without the first conductive pad 118.
根據上述可知,透過堆疊薄膜電晶體陣列基板120與驅動電路基板110,並藉由導電線140電性連接分佈於邊框區BR的第一導電墊118以及第二導電墊128,可使軟性電路板180無需接合在薄膜電晶體陣列基板120上。換句話說,邊框區BR的寬度僅需考慮第一導電墊118以及第二導電墊128之間的間距即可,因此可縮減窄邊框反射式顯示裝置100的邊框區BR的寬度。以第1圖的實施例為例,交界1204至蓋板150的邊緣1002於徑向上的距離D1小於2.5毫米,也就是窄邊框反射式顯示裝置100的邊框區BR的寬度小於2.5毫米。換句話說,藉由上述的配置,本揭露的窄邊框反射式顯示裝置100可具有窄邊框。As can be seen from the above, by stacking the thin film transistor array substrate 120 and the driving circuit substrate 110, and electrically connecting the first conductive pad 118 and the second conductive pad 128 distributed in the frame area BR through the conductive line 140, the flexible circuit board 180 does not need to be bonded to the thin film transistor array substrate 120. In other words, the width of the frame area BR only needs to consider the distance between the first conductive pad 118 and the second conductive pad 128, so the width of the frame area BR of the frame reflective display device 100 can be narrowed. Taking the embodiment of FIG. 1 as an example, the radial distance D1 from the boundary 1204 to the edge 1002 of the cover plate 150 is less than 2.5 mm, that is, the width of the frame region BR of the narrow-frame reflective display device 100 is less than 2.5 mm. In other words, through the above configuration, the narrow-frame reflective display device 100 disclosed in the present disclosure can have a narrow frame.
參照第2圖。在本實施例中,蓋板150的第一表面1502至薄膜電晶體陣列基板120的第三表面1202之間的厚度T約小於0.255毫米。交界1204至前面板疊構130的側壁的距離D2大約為0.5毫米,前面板疊構130的側壁至驅動電路基板110的側壁的距離D3大約為1.8毫米。Refer to FIG. 2. In this embodiment, the thickness T between the first surface 1502 of the cover plate 150 and the third surface 1202 of the thin film transistor array substrate 120 is less than about 0.255 mm. The distance D2 from the interface 1204 to the side wall of the front panel stack 130 is about 0.5 mm, and the distance D3 from the side wall of the front panel stack 130 to the side wall of the driving circuit substrate 110 is about 1.8 mm.
第4圖為根據本揭露另一實施例的窄邊框反射式顯示裝置100a的剖面圖。第4圖的剖面位置與第2圖中所示的剖面位置相同。窄邊框反射式顯示裝置100a與窄邊框反射式顯示裝置100大致相同,其差異在於窄邊框反射式顯示裝置100a為不可撓的顯示裝置。薄膜電晶體陣列基板120a具有基板122a。驅動電路基板110a與薄膜電晶體陣列基板120a的基板122a的材料為玻璃。舉例來說,玻璃的厚度大約為0.5毫米至0.7毫米。上述的結構尺寸僅為示例,並非用以限制本揭露。FIG. 4 is a cross-sectional view of a narrow-frame reflective display device 100a according to another embodiment of the present disclosure. The cross-sectional position of FIG. 4 is the same as the cross-sectional position shown in FIG. 2. The narrow-frame reflective display device 100a is substantially the same as the narrow-frame reflective display device 100, the difference being that the narrow-frame reflective display device 100a is an inflexible display device. The thin film transistor array substrate 120a has a substrate 122a. The material of the substrate 122a of the driving circuit substrate 110a and the thin film transistor array substrate 120a is glass. For example, the thickness of the glass is approximately 0.5 mm to 0.7 mm. The above-mentioned structural dimensions are merely examples and are not intended to limit the present disclosure.
窄邊框反射式顯示裝置100a與窄邊框反射式顯示裝置100具有相同的技術功效,於此不再贅述。The narrow-frame reflective display device 100a has the same technical effects as the narrow-frame reflective display device 100, and will not be described in detail herein.
第5圖為沿著第1圖中的線段5-5的剖面圖。窄邊框反射式顯示裝置100在第5圖中的所示的位置中不具有第一導電墊118、第二導電墊128以及導電線140。在此區域中,窄邊框反射式顯示裝置100包含設置於顯示介質層132與封膠160之間的銀漿190。銀漿190配置以電性連接透明導電膜134與薄膜電晶體陣列基板120上的引腳。FIG. 5 is a cross-sectional view along line 5-5 in FIG. 1. The narrow-frame reflective display device 100 does not have the first conductive pad 118, the second conductive pad 128, and the conductive line 140 in the position shown in FIG. 5. In this area, the narrow-frame reflective display device 100 includes a silver paste 190 disposed between the display medium layer 132 and the encapsulant 160. The silver paste 190 is configured to electrically connect the transparent conductive film 134 and the pins on the thin film transistor array substrate 120.
交界1204至顯示介質層132的側壁的距離D4大約為0.6毫米。前面板疊構130的側壁至顯示介質層132的側壁的距離D5大約為0.7毫米。前面板疊構130的側壁至驅動電路基板110的側壁的距離D6大約為1.2毫米。上述的結構尺寸僅為示例,並非用以限制本揭露。The distance D4 from the junction 1204 to the side wall of the display medium layer 132 is approximately 0.6 mm. The distance D5 from the side wall of the front panel stack 130 to the side wall of the display medium layer 132 is approximately 0.7 mm. The distance D6 from the side wall of the front panel stack 130 to the side wall of the drive circuit substrate 110 is approximately 1.2 mm. The above structural dimensions are only examples and are not intended to limit the present disclosure.
第6圖為沿著第1圖中的線段6-6的剖面圖。窄邊框反射式顯示裝置100在第6圖中的所示的位置中不具有第一導電墊118、第二導電墊128以及導電線140。在此區域中,交界1204至前面板疊構130的側壁的距離D7大約為1.3毫米。前面板疊構130的側壁至驅動電路基板110的側壁的距離D6大約為1.2毫米。上述的結構尺寸僅為示例,並非用以限制本揭露。FIG. 6 is a cross-sectional view along line 6-6 in FIG. 1. The narrow-frame reflective display device 100 does not have the first conductive pad 118, the second conductive pad 128, and the conductive line 140 in the position shown in FIG. 6. In this area, the distance D7 from the junction 1204 to the side wall of the front panel stack 130 is approximately 1.3 mm. The distance D6 from the side wall of the front panel stack 130 to the side wall of the drive circuit substrate 110 is approximately 1.2 mm. The above structural dimensions are only examples and are not intended to limit the present disclosure.
根據前述第2圖、第5圖以及第6圖中所示的結構尺寸可知,根據不同區域的結構配置,交界1204與邊緣1002之間的距離D1皆可縮減至小於2.5毫米。此外,邊框區BR的形狀可根據顯示區AA的形狀而定。根據上述可知,本揭露的窄邊框反射式顯示裝置可具有客製化的形狀,且具有小於2.5毫米的邊框區BR。According to the structural dimensions shown in FIG. 2, FIG. 5, and FIG. 6, the distance D1 between the boundary 1204 and the edge 1002 can be reduced to less than 2.5 mm according to the structural configuration of different regions. In addition, the shape of the frame area BR can be determined according to the shape of the display area AA. According to the above, the narrow frame reflective display device disclosed in the present disclosure can have a customized shape and have a frame area BR less than 2.5 mm.
第7A圖至第7D圖為根據本揭露一些實施例的窄邊框反射式顯示裝置的上視圖。第7A圖至第7D圖中分別為窄邊框反射式顯示裝置100b、100c、100d與100e的上視圖。如圖中所示,窄邊框反射式顯示裝置的顯示區AA可具有任意的形狀,且邊框區BR可根據顯示區AA的形狀而定。FIG. 7A to FIG. 7D are top views of narrow-frame reflective display devices according to some embodiments of the present disclosure. FIG. 7A to FIG. 7D are top views of narrow-frame
第8圖為根據本揭露另一實施例的窄邊框反射式顯示裝置100f的剖面圖。窄邊框反射式顯示裝置100f與第2圖所示的窄邊框反射式顯示裝置100具有相同的剖面位置,其中右側的邊框區BR於第8圖中省略。窄邊框反射式顯示裝置100f與窄邊框反射式顯示裝置100大致相同,其差異在於窄邊框反射式顯示裝置100f的驅動電路基板110c為印刷電路板(Printed Circuit Board,PCB)或者軟性電路板。驅動電路基板110c具有背對薄膜電晶體陣列基板120的第四表面1104。在本實施例中,窄邊框反射式顯示裝置110f的晶片182接合於驅動電路基板110c的第四表面1104上。晶片182在薄膜電晶體陣列基板120上的垂直投影可與顯示區AA以及/或者周邊區PA重疊,並不影響顯示區AA的顯示效果。換句話說,窄邊框反射式顯示裝置100f相當於是將窄邊框反射式顯示裝置100中的驅動電路基板110、軟性電路板180整合為驅動電路基板110c。藉由這樣的設計,可使得窄邊框反射式顯示裝置100f更加輕薄短小。此外,這樣的設計可省略覆晶薄膜(Chip on Film,COF)製程,使得窄邊框反射式顯示裝置100f的製程更為簡潔。窄邊框反射式顯示裝置100f與窄邊框反射式顯示裝置100具有相同的技術功效,於此不再贅述。本發明另外實施例中,晶片182也可接合於驅動電路基板110c的第二表面1102上。FIG. 8 is a cross-sectional view of a narrow-frame reflective display device 100f according to another embodiment of the present disclosure. The narrow-frame reflective display device 100f has the same cross-sectional position as the narrow-frame reflective display device 100 shown in FIG. 2, wherein the frame region BR on the right side is omitted in FIG. 8. The narrow-frame reflective display device 100f is substantially the same as the narrow-frame reflective display device 100, and the difference is that the driving circuit substrate 110c of the narrow-frame reflective display device 100f is a printed circuit board (PCB) or a flexible circuit board. The driving circuit substrate 110c has a fourth surface 1104 facing away from the thin film transistor array substrate 120. In this embodiment, the chip 182 of the narrow-frame reflective display device 110f is bonded to the fourth surface 1104 of the driving circuit substrate 110c. The vertical projection of the chip 182 on the thin film transistor array substrate 120 can overlap with the display area AA and/or the peripheral area PA without affecting the display effect of the display area AA. In other words, the narrow-frame reflective display device 100f is equivalent to integrating the driving circuit substrate 110 and the flexible circuit board 180 in the narrow-frame reflective display device 100 into the driving circuit substrate 110c. With such a design, the narrow-frame reflective display device 100f can be made thinner and smaller. In addition, such a design can omit the chip on film (COF) process, making the process of the narrow frame reflective display device 100f more concise. The narrow frame reflective display device 100f has the same technical effects as the narrow frame reflective display device 100, and will not be repeated here. In another embodiment of the present invention, the chip 182 can also be bonded to the second surface 1102 of the driving circuit substrate 110c.
第9圖為根據本揭露另一實施例的窄邊框反射式顯示裝置100g的剖面圖。窄邊框反射式顯示裝置100g與第2圖所示的窄邊框反射式顯示裝置100具有相同的剖面位置,其中右側的邊框區BR於第9圖中省略。窄邊框反射式顯示裝置100g與窄邊框反射式顯示裝置100f大致相同,其差異在於窄邊框反射式顯示裝置100g為不可撓的顯示裝置。換句話說,窄邊框反射式顯示裝置100g的薄膜電晶體陣列基板120a具有基板122a,且基板122a的材料為玻璃。窄邊框反射式顯示裝置100g與窄邊框反射式顯示裝置100f具有相同的技術功效,於此不再贅述。FIG. 9 is a cross-sectional view of a narrow-frame reflective display device 100g according to another embodiment of the present disclosure. The narrow-frame reflective display device 100g has the same cross-sectional position as the narrow-frame reflective display device 100 shown in FIG. 2, wherein the frame region BR on the right side is omitted in FIG. 9. The narrow-frame reflective display device 100g is substantially the same as the narrow-frame reflective display device 100f, the difference being that the narrow-frame reflective display device 100g is an inflexible display device. In other words, the thin film transistor array substrate 120a of the narrow-frame reflective display device 100g has a substrate 122a, and the material of the substrate 122a is glass. The narrow-frame reflective display device 100g has the same technical effects as the narrow-frame reflective display device 100f, which will not be described in detail herein.
綜上所述,薄膜電晶體陣列基板透過導電線以及軟性電路板與晶片電性連接以驅動窄邊框反射式顯示裝置。因此,無需設置明顯突出的接合區於薄膜電晶體陣列基板上以接合軟性電路板。上述的配置可縮減薄膜電晶體陣列基板的周邊區的寬度。本揭露透過堆疊薄膜電晶體陣列基板與驅動電路基板,並藉由導電線電性連接分佈於邊框區的第一導電墊以及第二導電墊,可使軟性電路板無需接合在薄膜電晶體陣列基板上。換句話說,邊框區的寬度僅需考慮第一導電墊以及第二導電墊之間的間距即可,因此可縮減窄邊框反射式顯示裝置的邊框區的寬度。此外,邊框區的形狀可根據顯示區的形狀而定,因此窄邊框反射式顯示裝置可具有客製化的形狀。In summary, the thin film transistor array substrate is electrically connected to the chip through conductive wires and a flexible circuit board to drive a narrow frame reflective display device. Therefore, there is no need to set a significantly protruding bonding area on the thin film transistor array substrate to bond the flexible circuit board. The above configuration can reduce the width of the peripheral area of the thin film transistor array substrate. The present disclosure stacks the thin film transistor array substrate and the driving circuit substrate, and electrically connects the first conductive pad and the second conductive pad distributed in the frame area through conductive wires, so that the flexible circuit board does not need to be bonded to the thin film transistor array substrate. In other words, the width of the border area only needs to consider the distance between the first conductive pad and the second conductive pad, so the width of the border area of the narrow border reflective display device can be reduced. In addition, the shape of the border area can be determined according to the shape of the display area, so the narrow border reflective display device can have a customized shape.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.
100,100a,100b,100c,100d,100e,100f,100g:窄邊框反射式顯示裝置 1002:邊緣 110,110a,110c:驅動電路基板 1101:側表面 1102:第二表面 1104:第四表面 112,122:聚醯亞胺薄膜 114,124:保護層 116,126:黏著層 118:第一導電墊 120,120a:薄膜電晶體陣列基板 1202:第三表面 1204:交界 122a:基板 128:第二導電墊 130:前面板疊構 132:顯示介質層 134:透明導電膜 136:光學膠層 140:導電線 150:蓋板 1502:第一表面 160:封膠 170:黏著層 180:軟性電路板 182:晶片 190:銀漿 AA:顯示區 PA:周邊區 BR:邊框區 BD:彎折區 D1,D2,D3,D4,D5,D6,D7:距離 2-2’,5-5,6-6:線段 Y:垂直方向 T:厚度 100,100a,100b,100c,100d,100e,100f,100g: narrow frame reflective display device 1002: edge 110,110a,110c: drive circuit substrate 1101: side surface 1102: second surface 1104: fourth surface 112,122: polyimide film 114,124: protective layer 116,126: adhesive layer 118: first conductive pad 120,120a: thin film transistor array substrate 1202: third surface 1204: junction 122a: substrate 128: second conductive pad 130: front panel stack 132: Display medium layer 134: Transparent conductive film 136: Optical adhesive layer 140: Conductive wire 150: Cover plate 1502: First surface 160: Sealing glue 170: Adhesive layer 180: Flexible circuit board 182: Chip 190: Silver paste AA: Display area PA: Peripheral area BR: Frame area BD: Bending area D1, D2, D3, D4, D5, D6, D7: Distance 2-2’, 5-5, 6-6: Line segment Y: Vertical direction T: Thickness
第1圖為根據本揭露一實施例的窄邊框反射式顯示裝置的上視圖。 第2圖為沿著第1圖中的線段2-2的剖面圖。 第3圖為第1圖中的窄邊框反射式顯示裝置省略蓋板與封膠後的上視圖。 第4圖為根據本揭露另一實施例的窄邊框反射式顯示裝置的剖面圖。 第5圖為沿著第1圖中的線段5-5的剖面圖。 第6圖為沿著第1圖中的線段6-6的剖面圖。 第7A圖至第7D圖為根據本揭露一些實施例的窄邊框反射式顯示裝置的上視圖。 第8圖為根據本揭露另一實施例的窄邊框反射式顯示裝置的剖面圖。 第9圖為根據本揭露另一實施例的窄邊框反射式顯示裝置的剖面圖。 FIG. 1 is a top view of a narrow-frame reflective display device according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view along line segment 2-2 in FIG. 1. FIG. 3 is a top view of the narrow-frame reflective display device in FIG. 1 with the cover plate and the sealant omitted. FIG. 4 is a cross-sectional view of a narrow-frame reflective display device according to another embodiment of the present disclosure. FIG. 5 is a cross-sectional view along line segment 5-5 in FIG. 1. FIG. 6 is a cross-sectional view along line segment 6-6 in FIG. 1. FIG. 7A to FIG. 7D are top views of narrow-frame reflective display devices according to some embodiments of the present disclosure. FIG. 8 is a cross-sectional view of a narrow-frame reflective display device according to another embodiment of the present disclosure. FIG. 9 is a cross-sectional view of a narrow-frame reflective display device according to another embodiment of the present disclosure.
100:窄邊框反射式顯示裝置 100: Narrow-frame reflective display device
1002:邊緣 1002: Edge
110:驅動電路基板 110: Drive circuit substrate
1101:側表面 1101: Side surface
1102:第二表面 1102: Second surface
1104:第四表面 1104: Fourth Surface
112,122:聚醯亞胺薄膜 112,122: Polyimide film
114,124:保護層 114,124: Protective layer
116,126:黏著層 116,126: Adhesive layer
118:第一導電墊 118: First conductive pad
120:薄膜電晶體陣列基板 120: Thin film transistor array substrate
1202:第三表面 1202: Third surface
1204:交界 1204: Junction
128:第二導電墊 128: Second conductive pad
130:前面板疊構 130: Front panel stacking structure
132:顯示介質層 132: Display media layer
134:透明導電膜 134: Transparent conductive film
136:光學膠層 136: Optical glue layer
140:導電線 140: Conductive wire
150:蓋板 150: Cover plate
1502:第一表面 1502: First surface
160:封膠 160: Sealing glue
170:黏著層 170: Adhesive layer
180:軟性電路板 180: Flexible circuit board
182:晶片 182: Chip
AA:顯示區 AA: Display area
PA:周邊區 PA: Peripheral Area
BR:邊框區 BR: Border area
BD:彎折區 BD: Bend area
D1,D2,D3:距離 D1,D2,D3:Distance
Y:垂直方向 Y: vertical direction
T:厚度 T:Thickness
2-2’:線段 2-2’: Line segment
Claims (14)
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US18/297,003 US12112669B2 (en) | 2022-04-28 | 2023-04-07 | Display device and driving circuit structure |
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Citations (4)
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US20150279918A1 (en) * | 2014-03-31 | 2015-10-01 | Sony Corporation | Display device and electronic apparatus |
TW201928624A (en) * | 2017-12-21 | 2019-07-16 | 大陸商業成科技(成都)有限公司 | Touch display panel |
TW202121036A (en) * | 2012-07-20 | 2021-06-01 | 日商半導體能源研究所股份有限公司 | Display device and electronic device including the display device |
TW202131522A (en) * | 2015-12-28 | 2021-08-16 | 日商半導體能源研究所股份有限公司 | Semiconductor device and display device including the semiconductor device |
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TW202121036A (en) * | 2012-07-20 | 2021-06-01 | 日商半導體能源研究所股份有限公司 | Display device and electronic device including the display device |
US20150279918A1 (en) * | 2014-03-31 | 2015-10-01 | Sony Corporation | Display device and electronic apparatus |
TW202131522A (en) * | 2015-12-28 | 2021-08-16 | 日商半導體能源研究所股份有限公司 | Semiconductor device and display device including the semiconductor device |
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