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TWI732764B - Temporary adhesive, adhesive film, adhesive support, laminate and adhesive kit - Google Patents

Temporary adhesive, adhesive film, adhesive support, laminate and adhesive kit Download PDF

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Publication number
TWI732764B
TWI732764B TW105116944A TW105116944A TWI732764B TW I732764 B TWI732764 B TW I732764B TW 105116944 A TW105116944 A TW 105116944A TW 105116944 A TW105116944 A TW 105116944A TW I732764 B TWI732764 B TW I732764B
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Taiwan
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adhesive
mass
adhesive layer
support
elastomer
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TW105116944A
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Chinese (zh)
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TW201643230A (en
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岩井悠
加持義貴
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日商富士軟片股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J125/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
    • C09J125/02Homopolymers or copolymers of hydrocarbons
    • C09J125/04Homopolymers or copolymers of styrene
    • C09J125/08Copolymers of styrene
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J153/00Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)

Abstract

本發明提供一種於常溫下的剝離性優異且接著性優異的暫時接著劑、以及使用所述暫時接著劑的接著膜、接著性支持體、積層體及套組。一種暫時接著劑,其含有:於25℃下為液體狀且含有矽原子的化合物、及於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。 The present invention provides a temporary adhesive having excellent releasability at room temperature and excellent adhesiveness, and an adhesive film, adhesive support, laminate, and set using the temporary adhesive. A temporary adhesive containing: a compound that is liquid at 25°C and contains silicon atoms, and contains the elasticity of a styrene-derived repeating unit in a proportion of 50% by mass or more and 95% by mass or less of all repeating units Body X.

Description

暫時接著劑、接著膜、接著性支持體、積層體及接著劑套組 Temporary adhesive, adhesive film, adhesive support, laminate and adhesive kit

本發明是有關於一種暫時接著劑、接著膜、接著性支持體、積層體及套組。更詳細而言是有關於一種可較佳地用於半導體裝置等的製造的暫時接著劑、接著膜、接著性支持體、積層體及套組。 The present invention relates to a temporary adhesive, adhesive film, adhesive support, laminate and set. More specifically, it relates to a temporary adhesive, adhesive film, adhesive support, laminate, and set that can be preferably used in the manufacture of semiconductor devices and the like.

於積體電路(Integrated Circuit,IC)或大規模積體電路(Large Scale Integrated circuit,LSI)等半導體元件的製造製程中,將多個IC晶片形成於元件晶圓上並藉由切割(dicing)而單片化。 In the manufacturing process of semiconductor devices such as Integrated Circuit (IC) or Large Scale Integrated Circuit (LSI), multiple IC chips are formed on the device wafer and dicing And monolithic.

隨著電子設備的進一步的小型化及高性能化的需求,對搭載於電子設備的IC晶片亦要求進一步的小型化及高積體化,但元件晶圓的面方向上的積體電路的高積體化接近極限。 With the demand for further miniaturization and high performance of electronic equipment, IC chips mounted on electronic equipment are also required to be further miniaturized and high-integrated. However, the integrated circuit in the surface direction of the element wafer is high. Integration is close to the limit.

作為自IC晶片內的積體電路向IC晶片的外部端子的電連接方法,自先前便廣泛已知有打線接合(wire bonding)法,但為了實現IC晶片的小型化,近年來已知有於元件晶圓設置貫通孔,並以貫通貫通孔內的方式將作為外部端子的金屬插塞連接於積體電路的方法(所謂的形成矽貫通電極(Through-Silicon Via,TSV)的方法)。然而,僅利用形成矽貫通電極的方法無法充分應對所述近年來對IC晶片的進一步的高積體化的需求。As a method of electrical connection from the integrated circuit in the IC chip to the external terminal of the IC chip, wire bonding has been widely known from the past. However, in order to realize the miniaturization of the IC chip, it has been known in recent years. A method in which a through hole is provided in the element wafer and a metal plug as an external terminal is connected to an integrated circuit through the through hole (a so-called Through-Silicon Via (TSV) method). However, the method of forming silicon through-electrodes alone cannot adequately cope with the demand for further high integration of IC chips in recent years.

鑒於以上,已知有藉由使IC晶片內的積體電路多層化而提高元件晶圓的每單位面積的積體度的技術。然而,積體電路的多層化使IC晶片的厚度增大,因此必須使構成IC晶片的構件薄型化。作為此種構件的薄型化,例如研究有元件晶圓的薄型化,不僅可帶來IC晶片的小型化而且可使矽貫通電極的製造中的元件晶圓的貫通孔製造步驟省力化,因此被視為有前途。另外,於功率元件·影像感測器等半導體元件中,就提高所述積體度或提高元件結構的自由度的觀點而言,亦嘗試薄型化。In view of the above, there is known a technique for increasing the integration degree per unit area of the element wafer by multilayering the integrated circuits in the IC chip. However, the multi-layered integrated circuit increases the thickness of the IC chip, so it is necessary to reduce the thickness of the components constituting the IC chip. As the thinning of such components, for example, the thinning of element wafers has been studied, which not only leads to the miniaturization of IC wafers, but also saves labor in the process of manufacturing through-holes of element wafers in the manufacture of silicon through electrodes. Considered promising. In addition, in semiconductor devices such as power devices and image sensors, attempts have been made to reduce the thickness from the viewpoint of increasing the degree of integration or increasing the degree of freedom of the device structure.

作為元件晶圓,廣泛已知有具有約700 μm~900 μm的厚度者,但近年來出於IC晶片的小型化等目的,嘗試將元件晶圓的厚度變薄至200 μm以下。 然而,厚度為200 μm以下的元件晶圓非常薄,將其作為基材的半導體元件製造用構件亦非常薄,因此當對此種構件實施進一步的處理或僅將此種構件移動時等,難以穩定且不造成損傷地對構件進行支持。As element wafers, those having a thickness of about 700 μm to 900 μm are widely known, but in recent years, attempts have been made to thin the thickness of the element wafers to 200 μm or less for the purpose of miniaturization of IC wafers and the like. However, the device wafer with a thickness of 200 μm or less is very thin, and the semiconductor device manufacturing member using it as the base material is also very thin. Therefore, it is difficult to perform further processing on this kind of member or to move only this kind of member. Support the components stably and without causing damage.

為了解決所述般的問題,已知有藉由暫時接著劑將表面設有元件的薄型化前的元件晶圓與支持體暫時接著,並對元件晶圓的背面進行研削而薄型化,之後將支持體剝下的技術。 例如,專利文獻1中揭示有具有聚苯乙烯系彈性體與表面改質劑的接著劑組成物。 另外,專利文獻2中揭示有含有環烯烴系聚合物與如下化合物的暫時固定材,所述化合物具有二烷基矽酮結構及聚氧伸烷基結構等結構。 進而,專利文獻3中記載有於元件晶圓與支持基板的暫時接著時,使用剝離層與保護層,於剝離層中使用包含氟原子及/或矽原子的材料。 [現有技術文獻] [專利文獻]In order to solve the above-mentioned problems, it is known that a temporary adhesive is used to temporarily bond a device wafer with a device on its surface before thinning to a support, and then grind the back surface of the device wafer to make it thinner. Support peeling technology. For example, Patent Document 1 discloses an adhesive composition having a polystyrene elastomer and a surface modifier. In addition, Patent Document 2 discloses a temporary fixing material containing a cycloolefin-based polymer and a compound having a structure such as a dialkyl silicone structure and a polyoxyalkylene structure. Furthermore, Patent Document 3 describes that a release layer and a protective layer are used for temporary bonding of the element wafer and the support substrate, and a material containing fluorine atoms and/or silicon atoms is used for the release layer. [Prior Art Document] [Patent Document]

[專利文獻1]美國2014/0178701A1號公報 [專利文獻2]日本專利特開2013-241568號公報 [專利文獻3]日本專利特開2015-065401號公報[Patent Document 1] U.S. Patent No. 2014/0178701A1 [Patent Document 2] Japanese Patent Laid-open No. 2013-241568 [Patent Document 3] Japanese Patent Laid-Open No. 2015-065401

[發明所欲解決之課題] 然而,本發明者進行了研究,結果得知於專利文獻1中記載的接著劑組成物及專利文獻2中記載的暫時固定材中,在對元件晶圓進行薄型化後,難以於室溫下將元件晶圓與支持體剝離。另外,通常若欲使剝離性提高,則存在接著性劣化的傾向。 本發明是為了解決所述課題而成者,且其目的在於提供一種於常溫下的剝離性優異且接著性優異的暫時接著劑、以及使用所述暫時接著劑的接著膜、接著性支持體、積層體及套組。 [解決課題之手段][Problems to be Solved by the Invention] However, the inventors conducted research, and as a result, it was found that the adhesive composition described in Patent Document 1 and the temporary fixing material described in Patent Document 2 are used to thin the element wafer After chemicalization, it is difficult to peel the device wafer from the support at room temperature. In addition, in general, if it is desired to improve the releasability, the adhesiveness tends to deteriorate. The present invention was made to solve the above-mentioned problems, and its object is to provide a temporary adhesive that has excellent releasability at room temperature and excellent adhesiveness, and an adhesive film, an adhesive support, and an adhesive film using the temporary adhesive. Laminated body and set. [Means to solve the problem]

根據所述課題,本發明者進行了努力研究,結果發現藉由於源自苯乙烯的重複單元的比例多的苯乙烯系彈性體中調配於25℃下為液體狀且含有矽原子的化合物,可解決所述課題,從而完成了本發明。 具體而言,藉由下述手段<1>,較佳為藉由下述手段<2>~手段<25>來解決所述課題。 <1> 一種暫時接著劑,其含有:於25℃下為液體狀且含有矽原子的化合物、及於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。 <2> 如<1>所述的暫時接著劑,其中所述含有矽原子的化合物的自25℃以20℃/min昇溫的10%熱質量減少溫度為250℃以上。 <3> 如<1>或<2>所述的暫時接著劑,其中所述彈性體X的依據日本工業標準(Japanese Industrial Standards,JIS)K6253的方法並利用A型硬度計(Type A durometer)進行測定而得的硬度為80以上。 <4> 如<1>~<3>中任一項所述的暫時接著劑,其進而包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。 <5> 如<4>所述的暫時接著劑,其中所述彈性體X與所述彈性體Y的質量比為5:95~95:5。 <6> 如<1>~<5>中任一項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種自25℃以20℃/min昇溫的5%熱質量減少溫度為250℃以上。 <7> 如<1>~<6>中任一項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種的不飽和雙鍵量為7 mmol/g以下。 <8> 如<1>~<7>中任一項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種為氫化物。 <9> 如<1>~<8>中任一項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種為嵌段共聚物。 <10> 如<1>~<9>中任一項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種為單末端或兩末端是源自苯乙烯的嵌段共聚物。 <11> 如<1>~<10>中任一項所述的暫時接著劑,其中相對於所述暫時接著劑中的彈性體的合計量,含有矽原子的化合物的含量為0.01質量%以上且小於2.5質量%。 <12> 如<1>~<11>中任一項所述的暫時接著劑,其中所述含有矽原子的化合物選自二甲基聚矽氧烷、甲基苯基聚矽氧烷、二苯基聚矽氧烷及聚醚改質聚矽氧烷。 <13> 如<1>~<12>中任一項所述的暫時接著劑,其進而包含抗氧化劑及溶劑的至少一者。 <14> 如<1>~<13>中任一項所述的暫時接著劑,其中所述暫時接著劑為半導體裝置製造用暫時接著劑。 <15> 一種接著膜,其具有包含如<1>~<14>中任一項所述的暫時接著劑的接著層。 <16> 一種接著性支持體,其具有:包含如<1>~<14>中任一項所述的暫時接著劑的接著層、以及支持體。 <17> 一種積層體,其具有:支持體、包含如<1>~<14>中任一項所述的暫時接著劑的接著層、以及基材。 <18> 如<17>所述的積層體,其中所述接著層位於所述支持體的表面,所述基材位於所述接著層的與所述支持體為相反側的表面。 <19> 如<17>所述的積層體,其中所述支持體、所述接著層、及所述基材以所述順序積層,且於所述支持體與所述接著層之間具有與所述接著層的組成不同的第2接著層。 <20> 如<17>所述的積層體,其中所述支持體、所述接著層、及所述基材以所述順序積層,且於所述接著層與所述基材之間具有與所述接著層的組成不同的第2接著層。 <21> 如<19>或<20>所述的積層體,其中所述第2接著層包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。 <22> 如<19>~<21>中任一項所述的積層體,其中所述第2接著層包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。 <23> 如<19>~<22>中任一項所述的積層體,其中所述第2接著層中的於25℃下為液體狀且含有矽原子的化合物的含量為所述接著層中所含的於25℃下為液體狀且含有矽原子的化合物的含量的10質量%以下。 <24> 如<17>~<23>中任一項所述的積層體,其中所述基材為元件晶圓。 <25> 一種套組,其具有:如<1>~<14>中任一項所述的暫時接著劑;以及第2接著劑,包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,且與所述暫時接著劑的組成不同。 [發明的效果]Based on the above-mentioned problems, the inventors conducted diligent studies. As a result, they found that a compound that is liquid at 25°C and contains silicon atoms is blended into a styrene-based elastomer with a high proportion of styrene-derived repeating units. The above-mentioned problems are solved, and the present invention has been completed. Specifically, the above-mentioned problem is solved by the following means <1>, preferably by the following means <2> to <25>. <1> A temporary adhesive containing: a compound that is liquid at 25°C and contains silicon atoms, and contains repeats derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units The elastomer X of the unit. <2> The temporary adhesive as described in <1>, wherein the silicon atom-containing compound has a 10% thermal mass reduction temperature at 20°C/min from 25°C of 250°C or higher. <3> The temporary adhesive as described in <1> or <2>, wherein the elastomer X is based on the method of Japanese Industrial Standards (JIS) K6253 and uses Type A durometer The measured hardness is 80 or more. <4> The temporary adhesive as described in any one of <1> to <3>, which further contains a styrene-derived repeating unit in a ratio of 10% by mass or more and less than 50% by mass in all repeating units The elastomer Y. <5> The temporary adhesive as described in <4>, wherein the mass ratio of the elastomer X to the elastomer Y is 5:95 to 95:5. <6> The temporary adhesive according to any one of <1> to <5>, wherein at least one of the elastomers contained in the temporary adhesive is heated from 25°C at 20°C/min by 5% heat The mass reduction temperature is 250°C or higher. <7> The temporary adhesive according to any one of <1> to <6>, wherein the amount of unsaturated double bonds of at least one type of elastomer contained in the temporary adhesive is 7 mmol/g or less. <8> The temporary adhesive according to any one of <1> to <7>, wherein at least one of the elastomers contained in the temporary adhesive is a hydride. <9> The temporary adhesive according to any one of <1> to <8>, wherein at least one of the elastomers contained in the temporary adhesive is a block copolymer. <10> The temporary adhesive according to any one of <1> to <9>, wherein at least one of the elastomers contained in the temporary adhesive has a single end or both ends are embedding derived from styrene Segment copolymer. <11> The temporary adhesive according to any one of <1> to <10>, wherein the content of the compound containing silicon atoms is 0.01% by mass or more with respect to the total amount of elastomers in the temporary adhesive And less than 2.5% by mass. <12> The temporary adhesive according to any one of <1> to <11>, wherein the silicon atom-containing compound is selected from the group consisting of dimethylpolysiloxane, methylphenylpolysiloxane, and Phenyl polysiloxane and polyether modified polysiloxane. <13> The temporary adhesive as described in any one of <1> to <12>, which further contains at least one of an antioxidant and a solvent. <14> The temporary adhesive according to any one of <1> to <13>, wherein the temporary adhesive is a temporary adhesive for semiconductor device manufacturing. <15> An adhesive film having an adhesive layer containing the temporary adhesive as described in any one of <1> to <14>. <16> An adhesive support having an adhesive layer containing the temporary adhesive as described in any one of <1> to <14>, and a support. <17> A laminate having a support, an adhesive layer containing the temporary adhesive as described in any one of <1> to <14>, and a substrate. <18> The laminate according to <17>, wherein the adhesive layer is located on the surface of the support, and the substrate is located on the surface of the adhesive layer on the opposite side to the support. <19> The laminate according to <17>, in which the support, the adhesive layer, and the base material are layered in the order described, and between the support and the adhesive layer The second adhesive layer having a different composition. <20> The laminate according to <17>, wherein the support, the adhesive layer, and the base material are layered in the order described, and the adhesive layer and the base material have and The second adhesive layer having a different composition. <21> The laminate according to <19> or <20>, wherein the second adhesive layer contains repeating units derived from styrene in a ratio of 50% by mass or more and 95% by mass or less in all repeating units The elastomer X. <22> The laminate according to any one of <19> to <21>, in which the second adhesive layer is contained in all repeating units at a ratio of 10% by mass or more and less than 50% by mass. Elastomer Y is a repeating unit of ethylene. <23> The laminate according to any one of <19> to <22>, wherein the content of the compound containing silicon atoms in the second adhesive layer that is liquid at 25° C. is that of the adhesive layer 10% by mass or less of the content of the compound that is liquid at 25° C. and contains silicon atoms contained in it. <24> The laminate according to any one of <17> to <23>, wherein the substrate is an element wafer. <25> A set comprising: the temporary adhesive as described in any one of <1> to <14>; and a second adhesive contained in all repeating units at 50% by mass or more and 95% by mass The following ratio contains elastomer X derived from styrene-derived repeating units, and is different from the composition of the temporary adhesive. [Effects of the invention]

根據本發明,可提供一種於常溫下的剝離性優異且接著性優異的暫時接著劑、以及使用所述暫時接著劑的接著膜、接著性支持體、積層體及套組。According to the present invention, it is possible to provide a temporary adhesive having excellent releasability at room temperature and excellent adhesiveness, and an adhesive film, adhesive support, laminate, and set using the temporary adhesive.

以下,對本發明的內容進行詳細說明。再者,於本說明書中,所謂「~」,是以包含其前後所記載的數值作為下限值及上限值的意義來使用。 於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基(原子團),並且亦包含具有取代基的基(原子團)。例如,所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 本說明書中的「光化射線」或「放射線」例如是指包含可見光線、紫外線、遠紫外線、電子束、X射線等者。 於本說明書中,所謂「光」是指光化射線或放射線。 於本說明書中,所謂「曝光」,只要無特別說明,則不僅包含使用水銀燈、紫外線、以準分子雷射為代表的遠紫外線、X射線、極紫外光(Extreme Ultra-Violet)等進行的曝光,亦包含使用電子束及離子束等粒子束進行的描繪。 於本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸,「(甲基)丙烯醯基」表示丙烯醯基及甲基丙烯醯基。 於本說明書中,重量平均分子量及數量平均分子量定義為利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)測定所得的聚苯乙烯換算值。於本說明書中,重量平均分子量(Mw)及數量平均分子量(Mn)例如可藉由使用HLC-8220(東曹(Tosoh)(股)製造),使用TSK gel Super AWM-H(東曹(Tosoh)(股)製造,6.0 mm(內徑)×15.0 cm)作為管柱,且使用10 mmol/L溴化鋰的N-甲基吡咯啶酮(N-methyl pyrrolidinone,NMP)溶液作為洗滌液而求出。 於本說明書中,所謂「親油基」是指不含親水性基的官能基。另外,所謂「親水性基」是指與水之間顯示出親和性的官能基。 再者,於以下說明的實施形態中,對於已經於參照的圖式中說明的構件等,藉由於圖中標注相同的符號或與其相當的符號而使說明簡略化或省略化。Hereinafter, the content of the present invention will be described in detail. In addition, in this specification, "-" is used in the meaning including the numerical value described before and after it as a lower limit and an upper limit. In the expression of the group (atomic group) in this specification, the expression that does not describe substituted and unsubstituted includes a group (atomic group) without a substituent, and also includes a group (atomic group) having a substituent. For example, the term "alkyl" includes not only an unsubstituted alkyl group (unsubstituted alkyl group) but also a substituted alkyl group (substituted alkyl group). The "actinic rays" or "radiation rays" in this specification refer to, for example, visible rays, ultraviolet rays, extreme ultraviolet rays, electron beams, X-rays, and the like. In this specification, the so-called "light" refers to actinic rays or radiation. In this manual, the term "exposure", unless otherwise specified, includes not only exposure using mercury lamps, ultraviolet rays, extreme ultraviolet rays represented by excimer lasers, X-rays, extreme ultraviolet light (Extreme Ultra-Violet), etc. , Also includes drawing using particle beams such as electron beams and ion beams. In this specification, "(meth)acrylate" means acrylate and methacrylate, "(meth)acrylic" means acrylic and methacrylic acid, and "(meth)acryloyl" means acryloyl and Methacrylic acid group. In this specification, the weight average molecular weight and the number average molecular weight are defined as polystyrene conversion values measured by Gel Permeation Chromatography (GPC). In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be used, for example, by using HLC-8220 (manufactured by Tosoh (stock)) and using TSK gel Super AWM-H (Tosoh (Tosoh) ) (Stock), 6.0 mm (inner diameter) × 15.0 cm) as the column, and use 10 mmol/L lithium bromide N-methyl pyrrolidinone (N-methyl pyrrolidinone, NMP) solution as the washing solution . In this specification, the "lipophilic group" refers to a functional group that does not contain a hydrophilic group. In addition, the "hydrophilic group" refers to a functional group that shows affinity with water. In addition, in the embodiments described below, for members and the like that have already been described in the referenced drawings, the description is simplified or omitted because the same symbols or symbols equivalent to them are attached in the drawings.

<暫時接著劑> 本發明的暫時接著劑的特徵在於含有:於25℃下為液體狀且含有矽原子的化合物(以下有時稱為「矽系液體狀化合物」)、及於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。 根據本發明的暫時接著劑,當對元件晶圓等基材實施機械性或化學性處理等時,能夠形成可對基材穩定地進行暫時接著且可容易解除對基材的暫時接著的接著層。 本發明的暫時接著劑包含所述矽系液體狀化合物,因此矽系液體狀化合物容易偏向存在於接著層的表層,可使接著層表層中的矽系液體狀化合物的濃度提高。因此,即便矽系液體狀化合物的量相對於暫時接著劑的固體成分而言較少,亦可形成對基材或支持體的剝離性優異的接著層。 另外,由於包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,因此於包含暫時接著劑的接著層的一部分或全部中形成源自彈性體X的堅硬區域而使剝離性提高。 本發明的暫時接著劑可特佳地用作半導體裝置製造用暫時接著劑。 以下,對本發明的暫時接著劑進行具體說明。<Temporary Adhesive> The temporary adhesive of the present invention is characterized by containing: a compound that is liquid at 25°C and contains silicon atoms (hereinafter sometimes referred to as "silicon-based liquid compound"), and in all repeating units Elastomer X containing repeating units derived from styrene in a ratio of 50% by mass or more and 95% by mass or less. According to the temporary adhesive of the present invention, when a substrate such as a device wafer is subjected to mechanical or chemical treatment, it is possible to form an adhesive layer that can stably perform temporary adhesion to the substrate and can easily release the temporary adhesion to the substrate . The temporary adhesive of the present invention contains the above-mentioned silicon-based liquid compound. Therefore, the silicon-based liquid compound tends to be concentrated on the surface layer of the adhesive layer, and the concentration of the silicon-based liquid compound in the surface layer of the adhesive layer can be increased. Therefore, even if the amount of the silicon-based liquid compound is small relative to the solid content of the temporary adhesive, it is possible to form an adhesive layer with excellent releasability to the substrate or support. In addition, since Elastomer X containing repeating units derived from styrene in a proportion of 50% by mass or more and 95% by mass or less in all repeating units is included, it forms a source in a part or all of the adhesive layer containing the temporary adhesive. From the hard region of the elastomer X, the peelability is improved. The temporary adhesive of the present invention can be particularly preferably used as a temporary adhesive for semiconductor device manufacturing. Hereinafter, the temporary adhesive of the present invention will be specifically described.

<<矽系液體狀化合物>> 本發明的暫時接著劑含有矽系液體狀化合物。 於本發明中,所謂液體狀化合物為於25℃下具有流動性的化合物,例如是指25℃下的黏度為1 mPa·s~100,000 mPa·s的化合物。矽系液體狀化合物的25℃下的黏度更佳為10 mPa·s~20,000 mPa·s,尤佳為100 mPa·s~15,000 mPa·s。若矽系液體狀化合物的黏度為所述範圍,則矽系液體狀化合物更容易偏向存在於接著層的表層,而較佳。<<Silicon-based liquid compound>> The temporary adhesive of the present invention contains a silicon-based liquid compound. In the present invention, the term “liquid compound” refers to a compound having fluidity at 25°C, for example, a compound having a viscosity of 1 mPa·s to 100,000 mPa·s at 25°C. The viscosity of the silicon-based liquid compound at 25°C is more preferably 10 mPa·s to 20,000 mPa·s, and particularly preferably 100 mPa·s to 15,000 mPa·s. If the viscosity of the silicon-based liquid compound is in the above range, the silicon-based liquid compound is more likely to be present on the surface layer of the adhesive layer, which is preferable.

於本發明中,矽系液體狀化合物亦可較佳地使用寡聚物、聚合物的任一形態的化合物。另外,亦可為寡聚物與聚合物的混合物。所述混合物中亦可進而含有單體(monomer)。另外,矽系液體狀化合物亦可為單體。 就耐熱性等觀點而言,矽系液體狀化合物較佳為寡聚物、聚合物及該些的混合物。 作為寡聚物、聚合物,例如可並無特別限定地使用加成聚合物、聚縮合物(polycondensate)、加成縮合物等,但特佳為聚縮合物。 矽系液體狀化合物的重量平均分子量較佳為500~100000,更佳為1000~50000,進而更佳為2000~20000。In the present invention, the silicon-based liquid compound can also be preferably used in any form of oligomer and polymer. In addition, it may be a mixture of oligomer and polymer. The mixture may further contain monomer (monomer). In addition, the silicon-based liquid compound may also be a monomer. From the viewpoint of heat resistance and the like, the silicon-based liquid compound is preferably an oligomer, a polymer, and a mixture of these. As the oligomer and polymer, for example, an addition polymer, a polycondensate (polycondensate), an addition condensate, etc. can be used without particular limitation, but a polycondensate is particularly preferred. The weight average molecular weight of the silicon-based liquid compound is preferably 500 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 20,000.

於本發明中,矽系液體狀化合物較佳為當對供於暫時接著的基材進行處理時不會改質的化合物。例如,較佳為即便於250℃以上進行加熱或利用各種化學藥液對基材進行處理後亦可以液體狀存在的化合物。作為具體的一例,較佳為於自25℃的狀態以10℃/min的昇溫條件加熱至250℃後,冷卻至25℃後的25℃下的黏度為1 mPa·s~100,000 mPa·s,更佳為10 mPa·s~20,000 mPa·s,尤佳為100 mPa·s~15,000 mPa·s。 作為具有此種特性的矽系液體狀化合物,較佳為不具有反應性基的非熱硬化性化合物。此處所述的反應性基是指藉由250℃的加熱而反應的基的全體,可列舉聚合性基、水解性基等。具體而言,例如可列舉:(甲基)丙烯酸基、環氧基、異氰酸基等。 另外,矽系液體狀化合物自25℃以20℃/min昇溫的10%熱質量減少溫度較佳為250℃以上,更佳為280℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的接著層。再者,所謂熱質量減少溫度,是指利用熱重量測定裝置(thermogravimetric analyzer,TGA)於氮氣流下以所述昇溫條件進行測定而得的值。 In the present invention, the silicon-based liquid compound is preferably a compound that does not change when the substrate for temporary bonding is processed. For example, it is preferably a compound that can exist in a liquid state even after heating at 250° C. or higher or processing the substrate with various chemical liquids. As a specific example, it is preferable to heat from a state of 25°C to 250°C at a temperature increase of 10°C/min, and then cool to 25°C. The viscosity at 25°C is 1 mPa·s to 100,000 mPa·s. It is more preferably 10 mPa·s to 20,000 mPa·s, and particularly preferably 100 mPa·s to 15,000 mPa·s. As the silicon-based liquid compound having such characteristics, a non-thermosetting compound having no reactive group is preferred. The reactive group mentioned here refers to the entire group that reacts by heating at 250°C, and includes a polymerizable group, a hydrolyzable group, and the like. Specifically, for example, a (meth)acrylic group, an epoxy group, an isocyanate group, etc. may be mentioned. In addition, the 10% thermal mass reduction temperature of the silicon-based liquid compound at a temperature rise of 20°C/min from 25°C is preferably 250°C or higher, more preferably 280°C or higher. In addition, the upper limit is not particularly limited. For example, it is preferably 1000°C or lower, and more preferably 800°C or lower. According to this aspect, it is easy to form an adhesive layer excellent in heat resistance. In addition, the so-called thermal mass reduction temperature refers to a value measured by a thermogravimetric analyzer (TGA) under a nitrogen stream under the above-mentioned heating conditions.

本發明中使用的矽系液體狀化合物較佳為含有親油基。作為親油基,可列舉直鏈或分支的烷基、環烷基、芳香族基等。 The silicon-based liquid compound used in the present invention preferably contains a lipophilic group. Examples of the lipophilic group include linear or branched alkyl groups, cycloalkyl groups, aromatic groups, and the like.

烷基的碳數較佳為1~30,更佳為1~10,進而更佳為1~3。作為烷基的具體例,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基、十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、2-乙基己基。 The carbon number of the alkyl group is preferably 1-30, more preferably 1-10, and still more preferably 1-3. Specific examples of the alkyl group include, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, Octadecyl, isopropyl, isobutyl, second butyl, tertiary butyl, 1-ethylpentyl, 2-ethylhexyl.

烷基可具有取代基。作為取代基,可列舉:鹵素原子、烷氧基、芳香族基等。作為鹵素原子,可列舉氯原子、氟原子、溴原子、碘原子等,較佳為氟原子。 The alkyl group may have a substituent. As a substituent, a halogen atom, an alkoxy group, an aromatic group, etc. are mentioned. As a halogen atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, etc. are mentioned, A fluorine atom is preferable.

烷氧基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷氧基較佳為直鏈烷氧基或分支烷氧基。 The carbon number of the alkoxy group is preferably 1-30, more preferably 1-20, and still more preferably 1-10. The alkoxy group is preferably a linear alkoxy group or a branched alkoxy group.

環烷基可為單環,亦可為多環。環烷基的碳數較佳為3~30,更佳為4~30,進而更佳為6~30,特佳為6~20。作為單環的環烷基,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環的環烷基,例如可列舉:金剛烷基、降冰片基、冰片基、莰烯基(camphenyl)、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基(camphoroyl)、二環己基及蒎烯基。 環烷基可具有所述取代基。Cycloalkyl groups may be monocyclic or polycyclic. The carbon number of the cycloalkyl group is preferably 3-30, more preferably 4-30, still more preferably 6-30, and particularly preferably 6-20. Examples of monocyclic cycloalkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl. Examples of polycyclic cycloalkyl groups include adamantyl, norbornyl, bornyl, camphenyl, decahydronaphthyl, tricyclodecyl, tetracyclodecyl, and camphenyl Group (camphoroyl), dicyclohexyl and pinenyl. Cycloalkyl groups may have such substituents.

芳香族基可為單環,亦可為多環。芳香族基的碳數較佳為6~20,更佳為6~14,特佳為6~10。芳香族基較佳為於構成環的元素中不含雜原子(例如氮原子、氧原子、硫原子等)。作為芳香族基的具體例,可列舉:苯環、萘環、戊搭烯(pentalene)環、茚(indene)環、薁環、庚搭烯(heptalene)環、苯并二茚(indecene)環、苝環、稠五苯(pentacene)環、苊環、菲環、蒽環、稠四苯環、

Figure 02_image001
(chrysene)環、聯伸三苯(triphenylene)環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、異喹啉環、咔唑環、啡啶(phenanthridine)環、吖啶環、啡啉環、噻蒽(thianthrene)環、苯并哌喃(chromene)環、氧雜蒽(xanthene)環、啡噁噻(phenoxathiin)環、啡噻嗪(phenothiazine)環及啡嗪環,較佳為苯環。 芳香族基可具有所述取代基。作為取代基,較佳為直鏈烷基。The aromatic group may be monocyclic or polycyclic. The number of carbon atoms in the aromatic group is preferably 6-20, more preferably 6-14, and particularly preferably 6-10. The aromatic group preferably does not contain heteroatoms (for example, nitrogen atoms, oxygen atoms, sulfur atoms, etc.) in the elements constituting the ring. Specific examples of aromatic groups include: benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, and indecene ring , Perylene ring, pentacene ring, acenaphthene ring, phenanthrene ring, anthracene ring, fused tetraphenyl ring,
Figure 02_image001
(Chrysene) ring, triphenylene ring, pyridine ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridine ring Pyrazine ring, indoleazine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinazine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoline Oxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthridine ring, thianthrene ring, chromene ring, xanthene The ring, the phenoxathiin ring, the phenothiazine ring and the phenothiazine ring are preferably a benzene ring. The aromatic group may have such a substituent. As the substituent, a linear alkyl group is preferred.

矽系液體狀化合物較佳為下述通式所表示的化合物。 [化1]

Figure 02_image003
所述通式中的R1 及R2 分別獨立地為直鏈或分支的烷基、環烷基或芳香族基,R1 及R2 的一者亦可為包含聚醚鏈的有機基。 另外,L1 表示-O-、或者包含聚醚鏈的連結基。The silicon-based liquid compound is preferably a compound represented by the following general formula. [化1]
Figure 02_image003
R 1 and R 2 in the general formula are each independently a linear or branched alkyl group, a cycloalkyl group, or an aromatic group, and one of R 1 and R 2 may also be an organic group including a polyether chain. In addition, L 1 represents -O- or a linking group containing a polyether chain.

作為所述通式中的R1 及R2 的直鏈或分支的烷基、環烷基或芳香族基的較佳範圍與所述親油基中所述的直鏈或分支的烷基、環烷基或芳香族基為相同含義,較佳範圍亦相同。 另外,於所述通式中,亦可列舉R1 及R2 的一者為包含聚醚鏈的有機基來作為較佳的形態。作為所述包含聚醚鏈的有機基中的聚醚結構,只要為具有多個醚鍵的結構,則並無特別限定,例如可列舉:聚乙二醇結構(聚環氧乙烷結構)、聚丙二醇結構(聚環氧丙烷結構)、聚丁二醇(聚四亞甲基二醇)結構、源自多種烷二醇(或環氧烷)的聚醚結構(例如聚(丙二醇/乙二醇)結構等)等的聚氧伸烷基結構。再者,源自多種烷二醇的聚醚結構中的各個烷二醇的加成形態可為嵌段型(嵌段共聚型),亦可為無規型(無規共聚型)。The preferred range of the straight-chain or branched alkyl group, cycloalkyl group or aromatic group as R 1 and R 2 in the general formula is the same as the straight-chain or branched alkyl group described in the lipophilic group, The cycloalkyl group or the aromatic group has the same meaning, and the preferred range is also the same. In addition, in the general formula, one of R 1 and R 2 may be an organic group including a polyether chain as a preferable aspect. The polyether structure in the organic group containing the polyether chain is not particularly limited as long as it has a plurality of ether bonds, and examples include polyethylene glycol structure (polyethylene oxide structure), Polypropylene glycol structure (polypropylene oxide structure), polybutylene glycol (polytetramethylene glycol) structure, polyether structure derived from a variety of alkylene glycols (or alkylene oxides) (such as poly(propylene glycol/ethylene two Alcohol) structure, etc.) and other polyoxyalkylene structures. Furthermore, the addition form of each alkanediol in the polyether structure derived from a plurality of alkanediols may be a block type (block copolymerization type) or a random type (random copolymerization type).

所述包含聚醚鏈的有機基可為僅包含所述聚醚結構的有機基,亦可為具有如下結構的有機基,所述結構是所述聚醚結構的一個或兩個以上、與一個或兩個以上的連結基(具有一個以上的原子的二價基)連接而成。作為所述包含聚醚鏈的有機基中的連結基,例如可列舉:二價烴基(特別是直鏈狀或分支鏈狀的伸烷基)、硫醚基(-S-)、酯基(-COO-)、醯胺基(-CONH-)、羰基(-CO-)、碳酸酯基(-OCOO-)、該些的兩個以上鍵結而成的基等。The organic group containing the polyether chain may be an organic group containing only the polyether structure, or an organic group having the following structure, and the structure is one or more than two of the polyether structure, and one Or two or more linking groups (divalent groups with more than one atom) are connected. As the linking group in the organic group containing the polyether chain, for example, a divalent hydrocarbon group (especially a linear or branched alkylene group), a sulfide group (-S-), and an ester group ( -COO-), amide group (-CONH-), carbonyl group (-CO-), carbonate group (-OCOO-), groups formed by bonding two or more of these groups, etc.

另外,作為所述通式中的L1 的聚醚鏈,只要包含所述具有多個醚鍵的結構即可,並無特別限定,但可較佳地使用所述具有多個醚鍵的結構。另外,聚醚鏈可為僅包含聚醚結構的有機基,亦可為具有如下結構的有機基,所述結構是所述聚醚結構的一個或兩個以上、與一個或兩個以上的連結基(具有一個以上的原子的二價基)連接而成。作為所述包含聚醚鏈的有機基中的連結基,例如可列舉:二價烴基(特別是直鏈狀或支鏈狀的伸烷基)、硫醚基(-S-)、酯基(-COO-)、醯胺基(-CONH-)、羰基(-CO-)、碳酸酯基(-OCOO-)、該些的兩個以上鍵結而成的基等。In addition, as the polyether chain of L 1 in the general formula, it is not particularly limited as long as it includes the structure having a plurality of ether bonds, but the structure having a plurality of ether bonds can be preferably used. . In addition, the polyether chain may be an organic group containing only a polyether structure, or may be an organic group having a structure that is one or more than two of the polyether structure, and one or more connections A group (a divalent group with more than one atom) is connected. As the linking group in the organic group containing the polyether chain, for example, a divalent hydrocarbon group (especially a linear or branched alkylene group), a sulfide group (-S-), and an ester group ( -COO-), amide group (-CONH-), carbonyl group (-CO-), carbonate group (-OCOO-), groups formed by bonding two or more of these groups, etc.

本發明中的矽系液體狀化合物更佳為選自二甲基聚矽氧烷、甲基苯基聚矽氧烷、二苯基聚矽氧烷及聚醚改質聚矽氧烷中的至少一種。The silicon-based liquid compound in the present invention is more preferably at least one selected from the group consisting of dimethyl polysiloxane, methyl phenyl polysiloxane, diphenyl polysiloxane, and polyether modified polysiloxane. A sort of.

矽系液體狀化合物例如可列舉日本專利特開昭62-36663號、日本專利特開昭61-226746號、日本專利特開昭61-226745號、日本專利特開昭62-170950號、日本專利特開昭63-34540號、日本專利特開平7-230165號、日本專利特開平8-62834號、日本專利特開平9-54432號、日本專利特開平9-5988號、日本專利特開2001-330953號各公報記載的界面活性劑中於25℃下為液體狀者。 作為市售品,可使用商品名「畢克(BYK)-300」、「畢克(BYK)-301/302」、「畢克(BYK)-306」、「畢克(BYK)-307」、「畢克(BYK)-310」、「畢克(BYK)-315」、「畢克(BYK)-313」、「畢克(BYK)-320」、「畢克(BYK)-322」、「畢克(BYK)-323」、「畢克(BYK)-325」、「畢克(BYK)-330」、「畢克(BYK)-331」、「畢克(BYK)-333」、「畢克(BYK)-337」、「畢克(BYK)-341」、「畢克(BYK)-344」、「畢克(BYK)-345/346」、「畢克(BYK)-347」、「畢克(BYK)-348」、「畢克(BYK)-349」、「畢克(BYK)-370」、「畢克(BYK)-375」、「畢克(BYK)-377」、「畢克(BYK)-378」、「畢克(BYK)-UV3500」、「畢克(BYK)-UV3510」、「畢克(BYK)-UV3570」、「畢克(BYK)-3550」、「畢克-西科藍(BYK-SILCLEAN)3700」、「畢克-西科藍(BYK-SILCLEAN)3720」(以上日本畢克化學(BYK-Chemie Japan)(股)製造);商品名「AC FS 180」、「AC FS 360」、「AC S 20」(以上愛格林化學(Algin Chemie)製造);商品名「珀利弗洛(Polyflow)KL-400X」、「珀利弗洛(Polyflow)KL-400HF」、「珀利弗洛(Polyflow)KL-401」、「珀利弗洛(Polyflow)KL-402」、珀利弗洛(Polyflow)KL-403」、「珀利弗洛(Polyflow)KL-404」、「珀利弗洛(Polyflow)KL-700」(以上共榮社化學(股)製造);商品名「KP-301」、「KP-306」、「KP-109」、「KP-310」、「KP-310B」、「KP-323」、「KP-326」、「KP-341」、「KP-104」、「KP-110」、「KP-112」、「KP-360A」、「KP-361」、「KP-354」、「KP-355」、「KP-356」、「KP-357」、「KP-358」、「KP-359」、「KP-362」、「KP-365」、「KP-366」、「KP-368」、「KP-369」、「KP-330」、「KP-650」、「KP-651」、「KP-390」、「KP-391」、「KP-392」(以上信越化學工業(股)製造);商品名「LP-7001」、「LP-7002」、「SH28PA」、「8032助劑(ADDITIVE)」、「57助劑(ADDITIVE)」、「L-7604」、「FZ-2110」、「FZ-2105」、「67助劑(ADDITIVE)」、「8618助劑(ADDITIVE)」、「3助劑(ADDITIVE)」、「56助劑(ADDITIVE)」(以上東麗道康寧(Toray Dow Corning)(股)製造);「迪高潤濕劑(TEGO WET)270」(日本贏創德固賽(Evonik Degussa Japan)(股)製造);「NBX-15」(奈奧斯(NEOS)(股)製造)等市售品。Examples of the silicon-based liquid compound include Japanese Patent Laid-Open No. 62-36663, Japanese Patent Laid-Open No. 61-226746, Japanese Patent Laid-Open No. 61-226745, Japanese Patent Laid-Open No. 62-170950, Japanese Patent Japanese Patent Application Publication No. 63-34540, Japanese Patent Application Publication No. 7-230165, Japanese Patent Application Publication No. 8-62834, Japanese Patent Application Publication No. 9-54432, Japanese Patent Application Publication No. 9-5988, Japanese Patent Application Publication No. 2001- Among the surfactants described in the respective publications of No. 330953, those that are liquid at 25°C. As commercially available products, the product names "BYK-300", "BYK-301/302", "BYK-306", and "BYK-307" can be used , "BYK-310", "BYK-315", "BYK-313", "BYK-320", "BYK-322" , "BYK-323", "BYK-325", "BYK-330", "BYK-331", "BYK-333" , "BYK-337", "BYK-341", "BYK-344", "BYK-345/346", "BYK- 347", "BYK-348", "BYK-349", "BYK-370", "BYK-375", "BYK- 377", "BYK-378", "BYK-UV3500", "BYK-UV3510", "BYK-UV3570", "BYK- 3550", "BYK-SILCLEAN 3700", "BYK-SILCLEAN 3720" (manufactured by BYK-Chemie Japan (stock) above); Trade names "AC FS 180", "AC FS 360", "AC S 20" (manufactured by Algin Chemie above); trade names "Polyflow KL-400X", "Polyflow "Polyflow (Polyflow) KL-400HF", "Polyflow (Polyflow) KL-401", "Polyflow (Polyflow) KL-402", "Polyflow (Polyflow) KL-403", "Polyflow Polyflow KL-404", "Polyflow KL-700" (manufactured by Kyoeisha Chemical Co., Ltd. above); trade names "KP-301", "KP-306", "KP -109", "KP-310", "KP-310B", "KP-323", "KP-326", "KP-341", "KP-104", "KP-110", "KP-112 ”, “KP-360A”, “KP-361”, “KP-354”, “KP-355”, “KP-356”, “KP-357”, “KP-358”, “KP-359”, "KP-362", "KP-365", "KP-366", "KP-368", "KP-369", "KP-330", "KP-6 50", "KP-651", "KP-390", "KP-391", "KP-392" (manufactured by Shin-Etsu Chemical Co., Ltd. above); product names "LP-7001", "LP-7002" , "SH28PA", "8032 additives (ADDITIVE)", "57 additives (ADDITIVE)", "L-7604", "FZ-2110", "FZ-2105", "67 additives (ADDITIVE)", "8618 additives (ADDITIVE)", "3 additives (ADDITIVE)", "56 additives (ADDITIVE)" (manufactured by Toray Dow Corning (stock) above); "TEGO wetting agent (TEGO) WET 270" (manufactured by Evonik Degussa Japan (stock)); "NBX-15" (manufactured by NEOS (stock)) and other commercially available products.

相對於暫時接著劑中所含的彈性體的合計量,本發明的暫時接著劑中的矽系液體狀化合物的含量較佳為0.009質量%以上,更佳為0.01質量%以上,進而更佳為0.05質量%以上,特佳為0.1質量%以上,進而尤佳為0.2質量%以上。另外,作為上限值,較佳為10質量%以下,更佳為5質量%以下,進而更佳為小於2.5質量%,尤佳為1質量%以下,進而尤佳為0.6質量%以下。 若矽系液體狀化合物的含量為所述範圍,則接著性及剝離性更優異。特別是於本發明中,就即便暫時接著劑的量少,亦可達成本發明的效果的方面而言價值高。 矽系液體狀化合物可為單獨一種,亦可併用兩種以上。於併用兩種以上的情況下,較佳為合計含量為所述範圍。The content of the silicon-based liquid compound in the temporary adhesive of the present invention is preferably 0.009% by mass or more, more preferably 0.01% by mass or more, and still more preferably 0.05% by mass or more, particularly preferably 0.1% by mass or more, and even more preferably 0.2% by mass or more. In addition, as the upper limit, it is preferably 10% by mass or less, more preferably 5% by mass or less, still more preferably less than 2.5% by mass, particularly preferably 1% by mass or less, and still more preferably 0.6% by mass or less. When the content of the silicon-based liquid compound is within the above range, the adhesiveness and peelability are more excellent. Particularly in the present invention, even if the amount of the temporary adhesive is small, the effect of the present invention can be achieved. The silicon-based liquid compound may be one kind alone, or two or more kinds may be used in combination. When two or more types are used in combination, it is preferable that the total content is in the above-mentioned range.

<<彈性體>> 本發明的暫時接著劑含有彈性體。藉由使用彈性體,亦可追隨支持體或基材的微細凹凸,並利用適度的錨固(anchor)效果而形成接著性優異的接著層。另外,當將支持體自基材剝離時,可不對基材等施加應力地將支持體自基材剝離,可防止基材上的元件等的破損或剝落。 再者,於本說明書中,所謂彈性體是表示顯示出彈性變形的高分子化合物。即,定義為具有如下性質的高分子化合物:當施加外力時,相應於該外力而瞬間發生變形,且去除外力時於短時間內恢復至原來的形狀。<<Elastomer>> The temporary adhesive of the present invention contains an elastomer. By using an elastomer, it is also possible to follow the fine unevenness of the support or the base material, and use a moderate anchor effect to form an adhesive layer with excellent adhesiveness. In addition, when the support is peeled from the base material, the support can be peeled from the base material without applying stress to the base material, etc., and it is possible to prevent breakage or peeling of elements and the like on the base material. In addition, in this specification, the term "elastomer" refers to a polymer compound that exhibits elastic deformation. That is, it is defined as a polymer compound that has the following properties: when an external force is applied, it deforms instantly in response to the external force, and when the external force is removed, it returns to its original shape in a short time.

本發明中作為必需成分而包含的彈性體為於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,較佳為亦進而包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。 藉由併用彈性體X與彈性體Y而具有優異的剝離性且基材的研磨面的平坦性(以下亦稱為平坦研磨性)良好,從而可有效地抑制研磨後的基材的翹曲的產生。獲得此種效果的機制可推測為由以下所得者。 即,所述彈性體X為比較堅硬的材料,因此藉由包含彈性體X,可製造剝離性優異的接著層。另外,彈性體Y為比較柔軟的材料,因此容易形成具有彈性的接著層。因此,當使用本發明的暫時接著劑製造基材與支持體的積層體並對基材進行研磨而加以薄膜化時,即便局部地施加研磨時的壓力,接著層亦可發生彈性變形而容易地恢復至原來的形狀。其結果獲得優異的平坦研磨性。另外,即便對研磨後的積層體進行加熱處理並於其後加以冷卻,亦可藉由接著層緩和冷卻時產生的內部應力,從而可有效地抑制翹曲的產生。 另外,即便於彈性體X中調配彈性體Y,亦存在彈性體X發生相分離的區域等,藉此可充分地達成利用彈性體X的優異的剝離性。The elastomer contained as an essential component in the present invention is elastomer X containing styrene-derived repeating units in a proportion of 50% by mass or more and 95% by mass or less in all repeating units, and is preferably also included in all repeating units. The repeating unit contains the elastomer Y of the repeating unit derived from styrene in a ratio of 10% by mass or more and less than 50% by mass. The combination of Elastomer X and Elastomer Y provides excellent releasability and good flatness of the polished surface of the substrate (hereinafter also referred to as flat abrasiveness), which can effectively suppress the warpage of the polished substrate. produce. The mechanism for obtaining this effect can be presumed to be derived from the following. That is, the elastic body X is a relatively hard material, so by including the elastic body X, an adhesive layer with excellent peelability can be produced. In addition, since the elastic body Y is a relatively soft material, it is easy to form an adhesive layer having elasticity. Therefore, when the temporary adhesive of the present invention is used to produce a laminate of a substrate and a support, and the substrate is polished to form a thin film, even if the pressure during polishing is applied locally, the adhesive layer can be elastically deformed and easily Restore to its original shape. As a result, excellent flat abrasiveness is obtained. In addition, even if the polished layered body is heated and then cooled, the internal stress generated during cooling can be relieved by the adhesive layer, so that the occurrence of warpage can be effectively suppressed. In addition, even if the elastomer Y is blended into the elastomer X, there are regions where the elastomer X is phase-separated, and the like, whereby the excellent peelability by the elastomer X can be sufficiently achieved.

以下,對彈性體X與彈性體Y(將該些一併稱為「聚苯乙烯系彈性體」)的共同的較佳條件進行敘述。Hereinafter, the common preferable conditions of the elastomer X and the elastomer Y (these are collectively referred to as "polystyrene elastomer") will be described.

作為聚苯乙烯系彈性體,並無特別限制,可根據目的而適當選擇。例如可列舉:苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-丁二烯-丁烯-苯乙烯共聚物(SBBS)及該些的氫化物、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物等。There is no restriction|limiting in particular as a polystyrene-type elastomer, According to the objective, it can select suitably. Examples include: styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer Segment copolymer (SEBS), styrene-butadiene-butene-styrene copolymer (SBBS) and their hydrogenated products, styrene-ethylene-propylene-styrene block copolymer (SEPS), styrene -Ethylene-ethylene-propylene-styrene block copolymer, etc.

聚苯乙烯系彈性體的重量平均分子量較佳為2,000~200,000,更佳為10,000~200,000,進而更佳為50,000~100,000。藉由處於該範圍內,暫時接著劑於溶劑中的溶解性變得優異,塗佈性提高。另外,於將支持體自基材剝離後,當去除所殘存的接著層時,於溶劑中的溶解性亦優異,因此存在殘渣並不會殘留於基材或支持體的優點。 The weight average molecular weight of the polystyrene elastomer is preferably 2,000 to 200,000, more preferably 10,000 to 200,000, and still more preferably 50,000 to 100,000. By being within this range, the solubility of the temporary adhesive in the solvent becomes excellent, and the coatability is improved. In addition, when the remaining adhesive layer is removed after the support is peeled from the substrate, the solubility in the solvent is also excellent, so there is an advantage that the residue does not remain on the substrate or the support.

於本發明中,作為聚苯乙烯系彈性體,可列舉嵌段共聚物、無規共聚物、接枝共聚物,較佳為嵌段共聚物,更佳為單末端或兩末端是苯乙烯的嵌段共聚物,特佳為兩末端是苯乙烯的嵌段共聚物。若將聚苯乙烯系彈性體的兩末端設為苯乙烯的嵌段共聚物(源自苯乙烯的重複單元),則存在熱穩定性進一步提高的傾向。其原因在於:耐熱性高的源自苯乙烯的重複單元存在於末端。特別是,藉由源自苯乙烯的重複單元的嵌段部位為反應性的聚苯乙烯系硬嵌段而存在耐熱性、耐化學品性更優異的傾向,而較佳。另外,認為若將該些設為嵌段共聚物,則於200℃以上時於硬嵌段與軟嵌段中進行相分離。認為該相分離的形狀有助於抑制元件晶圓的基材表面的凹凸的產生。此外,就於溶劑中的溶解性及於抗蝕劑溶劑中的耐性的觀點而言,亦更佳為此種彈性體。 In the present invention, as polystyrene elastomers, block copolymers, random copolymers, and graft copolymers can be cited. Block copolymers are preferred, and one or both ends are styrene. The block copolymer is particularly preferably a block copolymer having styrene at both ends. If both ends of the polystyrene elastomer are made into block copolymers of styrene (repeating units derived from styrene), the thermal stability tends to be further improved. The reason is that a repeating unit derived from styrene with high heat resistance exists at the terminal. In particular, it is preferable that the block portion of the repeating unit derived from styrene is a reactive polystyrene-based hard block, which tends to be more excellent in heat resistance and chemical resistance. In addition, it is considered that if these are used as block copolymers, phase separation occurs in the hard block and the soft block at 200°C or higher. It is considered that this phase-separated shape contributes to suppressing the occurrence of irregularities on the surface of the base material of the element wafer. In addition, from the viewpoint of solubility in a solvent and resistance in a resist solvent, such an elastomer is also more preferable.

於本發明中,聚苯乙烯系彈性體較佳為氫化物。若聚苯乙烯系彈性體為氫化物,則熱穩定性或保存穩定性提高。進而,剝離性及剝離後的接著層的清洗去除性提高。再者,所謂氫化物,是指彈性體經氫化(hydrogenation)的結構的聚合物。 In the present invention, the polystyrene elastomer is preferably a hydride. If the polystyrene-based elastomer is a hydride, the thermal stability or storage stability is improved. Furthermore, the releasability and the cleaning removability of the adhesive layer after peeling are improved. In addition, the term "hydrogenated product" refers to a polymer having a hydrogenation structure of an elastomer.

聚苯乙烯系彈性體自25℃以20℃/min昇溫的5%熱質量減少溫度較佳為250℃以上,更佳為300℃以上,進而更佳為350℃以上,特佳為400℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的接著層。 聚苯乙烯系彈性體較佳為具有如下性質:當將原來的大小設為100%時,於室溫(20℃)下可以小的外力使其變形至200%,且當去除外力時,於短時間內恢復至130%以下。The 5% thermal mass reduction temperature of the polystyrene elastomer at a temperature rise of 20°C/min from 25°C is preferably 250°C or higher, more preferably 300°C or higher, still more preferably 350°C or higher, particularly preferably 400°C or higher . In addition, the upper limit is not particularly limited. For example, it is preferably 1000°C or lower, and more preferably 800°C or lower. According to this aspect, it is easy to form an adhesive layer excellent in heat resistance. The polystyrene elastomer preferably has the following properties: when the original size is set to 100%, it can be deformed to 200% with a small external force at room temperature (20°C), and when the external force is removed, Recovered to below 130% in a short time.

作為聚苯乙烯系彈性體的不飽和雙鍵量,就加工步驟後的剝離性的觀點而言,較佳為小於15 mmol/g,更佳為7 mmol/g以下,進而更佳為小於5 mmol/g,尤佳為小於0.5 mmol/g。關於下限值,並無特別規定,例如可設為0.001 mmol/g以上。 再者,此處所述的不飽和雙鍵量並不包含源自苯乙烯的苯環內的不飽和雙鍵。不飽和雙鍵量可藉由核磁共振(Nuclear Magnetic Resonance,NMR)測定而算出。The amount of unsaturated double bonds of the polystyrene elastomer is preferably less than 15 mmol/g, more preferably 7 mmol/g or less, and still more preferably less than 5 from the viewpoint of releasability after the processing step. mmol/g, particularly preferably less than 0.5 mmol/g. There is no particular restriction on the lower limit, but it can be set to 0.001 mmol/g or more, for example. Furthermore, the amount of unsaturated double bonds mentioned here does not include the unsaturated double bonds in the benzene ring derived from styrene. The amount of unsaturated double bonds can be calculated by nuclear magnetic resonance (Nuclear Magnetic Resonance, NMR) measurement.

再者,於本說明書中,所謂「源自苯乙烯的重複單元」是源自苯乙烯或使苯乙烯衍生物聚合時聚合物中所含的苯乙烯的構成單元,可具有取代基。作為苯乙烯衍生物,例如可列舉:α-甲基苯乙烯、3-甲基苯乙烯、4-丙基苯乙烯、4-環己基苯乙烯等。作為取代基,例如可列舉:碳數1~5的烷基、碳數1~5的烷氧基、碳數1~5的烷氧基烷基、乙醯氧基、羧基等。In addition, in this specification, the "repeating unit derived from styrene" is a structural unit derived from styrene or styrene contained in the polymer when a styrene derivative is polymerized, and may have a substituent. Examples of styrene derivatives include α-methylstyrene, 3-methylstyrene, 4-propylstyrene, 4-cyclohexylstyrene, and the like. As a substituent, a C1-C5 alkyl group, a C1-C5 alkoxy group, a C1-C5 alkoxyalkyl group, an acetoxy group, a carboxyl group, etc. are mentioned, for example.

作為聚苯乙烯系彈性體的市售品,例如可列舉:塔夫普倫(Tufprene)A、塔夫普倫(Tufprene)125、塔夫普倫(Tufprene)126S、索盧普倫(Solprene)T、阿薩普倫(Asaprene)T-411、阿薩普倫(Asaprene)T-432、阿薩普倫(Asaprene)T-437、阿薩普倫(Asaprene)T-438、阿薩普倫(Asaprene)T-439、塔夫泰科(Tuftec)H1272、塔夫泰科(Tuftec)P1500、塔夫泰科(Tuftec)H1052、塔夫泰科(Tuftec)H1062、塔夫泰科(Tuftec)M1943、塔夫泰科(Tuftec)M1911、塔夫泰科(Tuftec)H1041、塔夫泰科(Tuftec)MP10、塔夫泰科(Tuftec)M1913、塔夫泰科(Tuftec)H1051、塔夫泰科(Tuftec)H1053、塔夫泰科(Tuftec)P2000、塔夫泰科(Tuftec)H1043(以上為商品名、旭化成(股)製造);彈性體(Elastomer)AR-850C、彈性體(Elastomer)AR-815C、彈性體(Elastomer)AR-840C、彈性體(Elastomer)AR-830C、彈性體(Elastomer)AR-860C、彈性體(Elastomer)AR-875C、彈性體(Elastomer)AR-885C、彈性體(Elastomer)AR-SC-15、彈性體(Elastomer)AR-SC-0、彈性體(Elastomer)AR-SC-5、彈性體(Elastomer)AR-710、彈性體(Elastomer)AR-SC-65、彈性體(Elastomer)AR-SC-30、彈性體(Elastomer)AR-SC-75、彈性體(Elastomer)AR-SC-45、彈性體(Elastomer)AR-720、彈性體(Elastomer)AR-741、彈性體(Elastomer)AR-731、彈性體(Elastomer)AR-750、彈性體(Elastomer)AR-760、彈性體(Elastomer)AR-770、彈性體(Elastomer)AR-781、彈性體(Elastomer)AR-791、彈性體(Elastomer)AR-FL-75N、彈性體(Elastomer)AR-FL-85N、彈性體(Elastomer)AR-FL-60N、彈性體(Elastomer)AR-1050、彈性體(Elastomer)AR-1060、彈性體(Elastomer)AR-1040(以上為商品名、亞隆化成(Aronkasei)製造);科騰(Kraton)D1111、科騰(Kraton)D1113、科騰(Kraton)D1114、科騰(Kraton)D1117、科騰(Kraton)D1119、科騰(Kraton)D1124、科騰(Kraton)D1126、科騰(Kraton)D1161、科騰(Kraton)D1162、科騰(Kraton)D1163、科騰(Kraton)D1164、科騰(Kraton)D1165、科騰(Kraton)D1183、科騰(Kraton)D1193、科騰(Kraton)DX406、科騰(Kraton)D4141、科騰(Kraton)D4150、科騰(Kraton)D4153、科騰(Kraton)D4158、科騰(Kraton)D4270、科騰(Kraton)D4271、科騰(Kraton)D4433、科騰(Kraton)D1170、科騰(Kraton)D1171、科騰(Kraton)D1173、卡利庫斯(Cariflex)IR0307、卡利庫斯(Cariflex)IR0310、卡利庫斯(Cariflex)IR0401、科騰(Kraton)D0242、科騰(Kraton)D1101、科騰(Kraton)D1102、科騰(Kraton)D1116、科騰(Kraton)D1118、科騰(Kraton)D1133、科騰(Kraton)D1152、Examples of commercially available polystyrene elastomers include: Tufprene A, Tufprene 125, Tufprene 126S, and Solprene T, Asaprene T-411, Asaprene T-432, Asaprene T-437, Asaprene T-438, Asaprene (Asaprene) T-439, Tuftec H1272, Tuftec P1500, Tuftec H1052, Tuftec H1062, Tuftec H1062 M1943, Tuftec M1911, Tuftec H1041, Tuftec MP10, Tuftec M1913, Tuftec H1051, Tuftec H1051 Tuftec H1053, Tuftec P2000, Tuftec H1043 (the above are trade names, manufactured by Asahi Kasei); Elastomer AR-850C, Elastomer AR-815C, Elastomer AR-840C, Elastomer AR-830C, Elastomer AR-860C, Elastomer AR-875C, Elastomer AR-885C, Elastic Elastomer AR-SC-15, Elastomer AR-SC-0, Elastomer AR-SC-5, Elastomer AR-710, Elastomer AR-SC- 65. Elastomer AR-SC-30, Elastomer AR-SC-75, Elastomer AR-SC-45, Elastomer AR-720, Elastomer AR -741, Elastomer AR-731, Elastomer AR-750, Elastomer AR-760, Elastomer AR-770, Elastomer AR-781, Elastomer (Elastomer) AR-791, elastomer (Elastomer) AR-FL-75N, elastomer (Elastomer) AR-FL-85N, elastomer (Elastomer) mer) AR-FL-60N, Elastomer AR-1050, Elastomer AR-1060, Elastomer AR-1040 (the above are trade names, manufactured by Aronkasei); Section Kraton D1111, Kraton D1113, Kraton D1114, Kraton D1117, Kraton D1119, Kraton D1124, Kraton D1126, Kraton (Kraton) D1161, Kraton D1162, Kraton D1163, Kraton D1164, Kraton D1165, Kraton D1183, Kraton D1193, Kraton ( Kraton DX406, Kraton D4141, Kraton D4150, Kraton D4153, Kraton D4158, Kraton D4270, Kraton D4271, Kraton ) D4433, Kraton D1170, Kraton D1171, Kraton D1173, Cariflex IR0307, Cariflex IR0310, Cariflex IR0401 , Kraton D0242, Kraton D1101, Kraton D1102, Kraton D1116, Kraton D1118, Kraton D1133, Kraton D1152

科騰(Kraton)D1153、科騰(Kraton)D1155、科騰(Kraton)D1184、科騰(Kraton)D1186、科騰(Kraton)D1189、科騰(Kraton)D1191、科騰(Kraton)D1192、科騰(Kraton)DX405、科騰(Kraton)DX408、科騰(Kraton)DX410、科騰(Kraton)DX414、科騰(Kraton)DX415、科騰(Kraton)A1535、科騰(Kraton)A1536、科騰(Kraton)FG1901、科騰(Kraton)FG1924、科騰(Kraton)G1640、科騰(Kraton)G1641、科騰(Kraton)G1642、科騰(Kraton)G1643、科騰(Kraton)G1645、科騰(Kraton)G1633、科騰(Kraton)G1650、科騰(Kraton)G1651、科騰(Kraton)G1652、科騰(Kraton)G1654、科騰(Kraton)G1657、科騰(Kraton)G1660、科騰(Kraton)G1726、科騰(Kraton)G1701、科騰(Kraton)G1702、科騰(Kraton)G1730、科騰(Kraton)G1750、科騰(Kraton)G1765、科騰(Kraton)G4609、科騰(Kraton)G4610(以上為商品名、科騰(Kraton)公司製造);TR2000、TR2001、TR2003、TR2250、TR2500、TR2601、TR2630、TR2787、TR2827、TR1086、TR1600、SIS5002、SIS5200、SIS5250、SIS5405、SIS5505、戴納隆(Dynaron)6100P、戴納隆(Dynaron)4600P、戴納隆(Dynaron)6200P、戴納隆(Dynaron)4630P、戴納隆(Dynaron)8601P、戴納隆(Dynaron)8630P、戴納隆(Dynaron)8600P、戴納隆(Dynaron)8903P、戴納隆(Dynaron)6201B、戴納隆(Dynaron)1321P、戴納隆(Dynaron)1320P、戴納隆(Dynaron)2324P、戴納隆(Dynaron)9901P(以上為商品名、JSR(股)製造);登卡(Denka)STR系列(商品名、電化學工業(股)製造);昆塔克(Quintac)3520、昆塔克(Quintac)3433N、昆塔克(Quintac)3421、昆塔克(Quintac)3620、昆塔克(Quintac)3450、昆塔克(Quintac)3460(以上為商品名、日本瑞翁(ZEON)製造);TPE-SB系列(以上為商品名、住友化學(股)製造);拉巴隆(Rabalon)系列(商品名、三菱化學(股)製造);賽普頓(Septon)1001、賽普頓(Septon)8004、賽普頓(Septon)4033、賽普頓(Septon)2104、賽普頓(Septon)8007、賽普頓(Septon)2007、賽普頓(Septon)2004、賽普頓(Septon)2063、賽普頓(Septon)HG252、賽普頓(Septon)8076、賽普頓(Septon)2002、賽普頓(Septon)1020、賽普頓(Septon)8104、賽普頓(Septon)2005、賽普頓(Septon)2006、賽普頓(Septon)4055、賽普頓(Septon)4044、賽普頓(Septon)4077、賽普頓(Septon)4099、賽普頓(Septon)8006、賽普頓(Septon)V9461、賽普頓(Septon)V9475、賽普頓(Septon)V9827、海布拉(Hybrar)7311、海布拉(Hybrar)7125、海布拉(Hybrar)5127、海布拉(Hybrar)5125(以上為商品名、可樂麗(Kuraray)製造);蘇米庫斯(Sumiflex)(商品名、住友貝克萊特(Sumitomo Bakelite)(股)製造);萊奧斯托瑪(Leostomer)、艾庫塔馬(Actymer)(以上為商品名、理研乙烯工業製造)等。Kraton D1153, Kraton D1155, Kraton D1184, Kraton D1186, Kraton D1189, Kraton D1191, Kraton D1192 Kraton DX405, Kraton DX408, Kraton DX410, Kraton DX414, Kraton DX415, Kraton A1535, Kraton A1536, Kraton (Kraton) FG1901, Kraton FG1924, Kraton G1640, Kraton G1641, Kraton G1642, Kraton G1643, Kraton G1645, Kraton ( Kraton G1633, Kraton G1650, Kraton G1651, Kraton G1652, Kraton G1654, Kraton G1657, Kraton G1660, Kraton ) G1726, Kraton G1701, Kraton G1702, Kraton G1730, Kraton G1750, Kraton G1765, Kraton G4609, Kraton G4610 (the above are trade names, manufactured by Kraton); TR2000, TR2001, TR2003, TR2250, TR2500, TR2601, TR2630, TR2787, TR2827, TR1086, TR1600, SIS5002, SIS5200, SIS5250, SIS5405, SIS5505, Dyna Dynaron 6100P, Dynaron 4600P, Dynaron 6200P, Dynaron 4630P, Dynaron 8601P, Dynaron 8630P, Dynaron ( Dynaron 8600P, Dynaron 8903P, Dynaron 6201B, Dynaron 1321P, Dynaron 1320P, Dynaron 2324P, Dynaron 9901P (the above are trade names, manufactured by JSR (stock)); Denka STR series (trade names, manufactured by Electrochemical Industry (stock)); Quintac 3520, Quintac 3433N, Quintac 3421, Quintac 3620, Quintac 3450, Quintac 3460 (the above are Trade name, manufactured by ZEON, Japan); TPE-SB series (the above are trade names, manufactured by Sumitomo Chemical Co., Ltd.); Rabalon series (trade name, manufactured by Mitsubishi Chemical Co., Ltd.); Saipu Septon 1001, Septon 8004, Septon 4033, Septon 2104, Septon 8007, Septon 2007, Septon ( Septon 2004, Septon 2063, Septon HG252, Septon 8076, Septon 2002, Septon 1020, Septon 8104, Septon 2005, Septon 2006, Septon 4055, Septon 4044, Septon 4077, Septon 4099, Septon 8006, Septon V9461, Septon V9475, Septon V9827, Hybrar 7311, Hybrar 7125, Hybrar Hybrar 5127, Hybrar 5125 (the above are trade names, manufactured by Kuraray); Sumiflex (trade names, manufactured by Sumitomo Bakelite (stock)) ; Leostomer, Actymer (the above are trade names, manufactured by Riken Ethylene Industry), etc.

其次,對「彈性體X」中的特有的較佳範圍進行敘述。 彈性體X為於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體,源自苯乙烯的重複單元的含量較佳為超過50質量%且95質量%以下,更佳為超過50質量%且90質量%以下,進而更佳為超過50質量%且80質量%以下,特佳為55質量%~75質量%,尤佳為56質量%~70質量%。 彈性體X的硬度較佳為83以上,更佳為85以上,進而更佳為90以上。上限值並無特別規定,例如為99以下。再者,硬度是依據JIS(日本工業標準)K6253的方法並利用A型硬度計進行測定而得的值。Next, the specific preferable range in "Elastomer X" will be described. Elastomer X is an elastomer containing styrene-derived repeating units in a proportion of 50% by mass or more and 95% by mass or less in all repeating units. The content of styrene-derived repeating units is preferably more than 50% by mass and 95% by mass or less, more preferably more than 50% by mass and 90% by mass or less, still more preferably more than 50% by mass and 80% by mass or less, particularly preferably 55% to 75% by mass, and particularly preferably 56% by mass to 70% by mass. The hardness of the elastomer X is preferably 83 or more, more preferably 85 or more, and still more preferably 90 or more. The upper limit is not specifically defined, but is 99 or less, for example. In addition, the hardness is a value measured by the A-type hardness tester based on the method of JIS (Japanese Industrial Standard) K6253.

其次,對「彈性體Y」中的特有的較佳範圍進行敘述。 彈性體Y為於所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體,源自苯乙烯的重複單元的含量較佳為10質量%~45質量%,更佳為10質量%~40質量%,進而更佳為12質量%~35質量%,特佳為13質量%~33質量%。 彈性體Y的硬度較佳為82以下,更佳為80以下,進而更佳為78以下。下限值並無特別規定,但為1以上。 另外,彈性體X的硬度與彈性體Y的硬度之差較佳為5~40,更佳為10~35,進而更佳為15~33,尤佳為17~29。藉由設為此種範圍,本發明的效果更有效地得到發揮。Next, the specific preferable range in "Elastomer Y" will be described. Elastomer Y is an elastomer containing styrene-derived repeating units in a ratio of 10% by mass or more and less than 50% by mass in all repeating units. The content of styrene-derived repeating units is preferably 10% by mass to 45% by mass. % By mass, more preferably 10% by mass to 40% by mass, still more preferably 12% by mass to 35% by mass, particularly preferably 13% by mass to 33% by mass. The hardness of the elastomer Y is preferably 82 or less, more preferably 80 or less, and still more preferably 78 or less. The lower limit is not specifically defined, but is 1 or more. In addition, the difference between the hardness of the elastomer X and the hardness of the elastomer Y is preferably 5-40, more preferably 10-35, still more preferably 15-33, and particularly preferably 17-29. By setting it as such a range, the effect of this invention is exhibited more effectively.

本發明中亦可調配彈性體X及彈性體Y以外的其他彈性體。作為其他彈性體,可使用聚酯系彈性體、聚烯烴系彈性體、聚胺基甲酸酯系彈性體、聚醯胺系彈性體、聚丙烯酸系彈性體、矽酮系彈性體、聚醯亞胺系彈性體、經橡膠改質的環氧樹脂等。In the present invention, elastomers other than Elastomer X and Elastomer Y may also be blended. As other elastomers, polyester elastomers, polyolefin elastomers, polyurethane elastomers, polyamide elastomers, polyacrylic elastomers, silicone elastomers, and polyamides can be used. Imine-based elastomers, rubber-modified epoxy resins, etc.

相對於除了溶劑以外的暫時接著劑的質量,本發明的暫時接著劑中的彈性體X、彈性體Y及其他彈性體的合計量較佳為50.00質量%~99.99質量%,更佳為70.00質量%~99.99質量%,特佳為88.00質量%~99.99質量%。若彈性體的含量為所述範圍,則接著性及剝離性更優異。 另外,本發明的暫時接著劑中的彈性體X、彈性體Y及其他彈性體分別可為多種的組合。The total amount of elastomer X, elastomer Y, and other elastomers in the temporary adhesive agent of the present invention is preferably 50.00% by mass to 99.99% by mass, and more preferably 70.00% by mass, relative to the mass of the temporary adhesive other than the solvent. %-99.99% by mass, particularly preferably 88.00% by mass to 99.99% by mass. If the content of the elastomer is in the above range, the adhesiveness and releasability are more excellent. In addition, the elastomer X, the elastomer Y, and other elastomers in the temporary adhesive of the present invention may be a combination of multiple types, respectively.

本發明的暫時接著劑中所含的彈性體的含量中,彈性體X與彈性體Y的合計量較佳為佔整體的90質量%以上,更佳為佔95質量%以上,特佳為佔98質量%以上。 於調配彈性體Y的情況下,所述彈性體X與所述彈性體Y的質量比較佳為彈性體X:彈性體Y=5:95~95:5,更佳為20:80~90:10,特佳為40:60~85:15。若為所述範圍,則更有效地抑制翹曲及獲得剝離性。In the content of the elastomer contained in the temporary adhesive of the present invention, the total amount of elastomer X and elastomer Y is preferably 90% by mass or more of the whole, more preferably 95% by mass or more, and particularly preferably 98% by mass or more. In the case of compounding elastomer Y, the better quality of said elastomer X and said elastomer Y is elastomer X: elastomer Y=5:95-95:5, more preferably 20:80-90: 10. Especially preferred is 40:60~85:15. If it is the said range, the warpage is suppressed more effectively, and peelability will be acquired.

<<抗氧化劑>> 就防止因加熱時的氧化引起的彈性體的低分子化或凝膠化的觀點而言,本發明的暫時接著劑可含有抗氧化劑。作為抗氧化劑,可使用酚系抗氧化劑、硫系抗氧化劑、磷系抗氧化劑、醌系抗氧化劑、胺系抗氧化劑等。 作為酚系抗氧化劑,例如可列舉:對甲氧基苯酚、2,6-二-第三丁基-4-甲基苯酚、巴斯夫(BASF)(股)製造的「易璐諾斯(Irganox)1010」、「易璐諾斯(Irganox)1330」、「易璐諾斯(Irganox)3114」、「易璐諾斯(Irganox)1035」、住友化學(股)製造的「蘇米萊澤(Sumilizer)MDP-S」、「蘇米萊澤(Sumilizer)GA-80」等。 作為硫系抗氧化劑,例如可列舉:3,3'-硫代二丙酸二硬脂基酯、住友化學(股)製造的「蘇米萊澤(Sumilizer)TPM」、「蘇米萊澤(Sumilizer)TPS」、「蘇米萊澤(Sumilizer)TP-D」等。 作為磷系抗氧化劑,例如可列舉:三(2,4-二-第三丁基苯基)亞磷酸鹽、雙(2,4-二-第三丁基苯基)季戊四醇二亞磷酸鹽、聚(二丙二醇)苯基亞磷酸鹽、二苯基異癸基亞磷酸鹽、2-乙基己基二苯基亞磷酸鹽、三苯基亞磷酸鹽、巴斯夫(BASF)(股)製造的「易璐佛斯(Irgafos)168」、「易璐佛斯(Irgafos)38」等。 作為醌系抗氧化劑,例如可列舉對苯醌、2-第三丁基-1,4-苯醌等。 作為胺系抗氧化劑,例如可列舉二甲基苯胺或啡噻嗪等。 所述抗氧化劑中,較佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330、3,3'-硫代二丙酸二硬脂基酯、蘇米萊澤(Sumilizer)TP-D,更佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330,特佳為易璐諾斯(Irganox)1010。 另外,所述抗氧化劑中,較佳為倂用酚系抗氧化劑與硫系抗氧化劑或磷系抗氧化劑,特佳為倂用酚系抗氧化劑與硫系抗氧化劑。特別是於使用聚苯乙烯系彈性體作為彈性體的情況下,較佳為倂用酚系抗氧化劑與硫系抗氧化劑。藉由設為此種組合,而可期待可效率良好地抑制因氧化反應引起的彈性體的劣化。於倂用酚系抗氧化劑與硫系抗氧化劑的情況下,酚系抗氧化劑與硫系抗氧化劑的質量比較佳為酚系抗氧化劑:硫系抗氧化劑=95:5~5:95,更佳為25:75~75:25。 作為抗氧化劑的組合,較佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D、易璐諾斯(Irganox)1330與蘇米萊澤(Sumilizer)TP-D及蘇米萊澤(Sumilizer)GA-80與蘇米萊澤(Sumilizer)TP-D,更佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D、易璐諾斯(Irganox)1330與蘇米萊澤(Sumilizer)TP-D,特佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D。<<Antioxidant>> From the viewpoint of preventing demolition or gelation of the elastomer due to oxidation during heating, the temporary adhesive of the present invention may contain an antioxidant. As the antioxidant, phenol-based antioxidants, sulfur-based antioxidants, phosphorus-based antioxidants, quinone-based antioxidants, amine-based antioxidants, and the like can be used. Examples of phenolic antioxidants include p-methoxyphenol, 2,6-di-tert-butyl-4-methylphenol, and "Irganox" manufactured by BASF (Co., Ltd.) 1010", "Irganox 1330", "Irganox 3114", "Irganox 1035", "Sumilizer" manufactured by Sumitomo Chemical Co., Ltd. ) MDP-S", "Sumilizer GA-80", etc. Examples of sulfur-based antioxidants include: Distearyl 3,3'-thiodipropionate, "Sumilizer TPM" manufactured by Sumitomo Chemical Co., Ltd., and "Sumilizer ( Sumilizer TPS", "Sumilizer TP-D" and so on. Examples of phosphorus-based antioxidants include tris(2,4-di-tert-butylphenyl) phosphite, bis(2,4-di-tert-butylphenyl) pentaerythritol diphosphite, Poly(dipropylene glycol) phenyl phosphite, diphenyl isodecyl phosphite, 2-ethylhexyl diphenyl phosphite, triphenyl phosphite, manufactured by BASF (Stock) "Irgafos (Irgafos) 168", "Irgafos (Irgafos) 38" and so on. As quinone antioxidants, p-benzoquinone, 2-tert-butyl-1,4-benzoquinone, etc. are mentioned, for example. As the amine antioxidant, for example, dimethylaniline, phenothiazine, and the like can be cited. Among the antioxidants, preferably Irganox 1010, Irganox 1330, 3,3'-thiodipropionate distearyl ester, Sumilizer TP-D, more preferably Irganox 1010, Irganox 1330, and particularly preferably Irganox 1010. In addition, among the antioxidants, preferred are phenol-based antioxidants and sulfur-based antioxidants or phosphorus-based antioxidants, and particularly preferred are phenol-based antioxidants and sulfur-based antioxidants. In particular, when a polystyrene-based elastomer is used as the elastomer, a phenol-based antioxidant and a sulfur-based antioxidant are preferred. With such a combination, it can be expected that the deterioration of the elastomer due to the oxidation reaction can be suppressed efficiently. In the case of phenol-based antioxidants and sulfur-based antioxidants, the quality of phenol-based antioxidants and sulfur-based antioxidants is better. Phenolic antioxidants: sulfur-based antioxidants=95:5~5:95, better From 25:75 to 75:25. The combination of antioxidants is preferably Irganox 1010 and Sumilizer TP-D, Irganox 1330 and Sumilizer TP-D and Sumilizer TP-D. Sumilizer GA-80 and Sumilizer TP-D, more preferably Irganox 1010 and Sumilizer TP-D, Irganox ) 1330 and Sumilizer TP-D, particularly good ones are Irganox 1010 and Sumilizer TP-D.

就防止加熱中的昇華的觀點而言,抗氧化劑的分子量較佳為400以上,進而更佳為600以上,特佳為750以上。From the viewpoint of preventing sublimation during heating, the molecular weight of the antioxidant is preferably 400 or more, more preferably 600 or more, and particularly preferably 750 or more.

於暫時接著劑具有抗氧化劑的情況下,相對於暫時接著劑的總固體成分,抗氧化劑的含量較佳為0.001質量%~20.0質量%,更佳為0.005質量%~10.0質量%。 抗氧化劑可僅為一種,亦可為兩種以上。於抗氧化劑為兩種以上的情況下,較佳為其合計為所述範圍。When the temporary adhesive has an antioxidant, the content of the antioxidant is preferably 0.001% by mass to 20.0% by mass, and more preferably 0.005% by mass to 10.0% by mass relative to the total solid content of the temporary adhesive. There may be only one type of antioxidant, or two or more types. When there are two or more kinds of antioxidants, it is preferable that the total of them is in the above-mentioned range.

<<溶劑>> 本發明的暫時接著劑較佳為含有溶劑。特別是於藉由塗佈本發明的暫時接著劑來形成接著層的情況下,較佳為調配溶劑。溶劑可不受限制地使用公知者,較佳為有機溶劑。 作為有機溶劑,可較佳地列舉:乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、乙酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、氧基乙酸烷基酯(例如:氧基乙酸甲酯、氧基乙酸乙酯、氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-氧基丙酸烷基酯類(例如:3-氧基丙酸甲酯、3-氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-氧基丙酸烷基酯類(例如:2-氧基丙酸甲酯、2-氧基丙酸乙酯、2-氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-氧基-2-甲基丙酸甲酯及2-氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯、1-甲氧基-2-丙基乙酸酯等酯類; 二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等醚類; 甲基乙基酮、環己酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮、γ-丁內酯等酮類; 甲苯、二甲苯、苯甲醚、均三甲苯、乙基苯、丙基苯、枯烯、正丁基苯、第二丁基苯、異丁基苯、第三丁基苯、戊基苯、異戊基苯、(2,2-二甲基丙基)苯、1-苯基己烷、1-苯基庚烷、1-苯基辛烷、1-苯基壬烷、1-苯基癸烷、環丙基苯、環己基苯、2-乙基甲苯、1,2-二乙基苯、鄰-異丙基甲苯、茚滿、1,2,3,4-四氫萘、3-乙基甲苯、間-異丙基甲苯、1,3-二異丙基苯、4-乙基甲苯、1,4-二乙基苯、對-異丙基甲苯、1,4-二異丙基苯、4-第三丁基甲苯、1,4-二-第三丁基苯、1,3-二乙基苯、1,2,3-三甲基苯、1,2,4-三甲基苯、4-第三丁基-鄰二甲苯、1,2,4-三乙基苯、1,3,5-三乙基苯、1,3,5-三異丙基苯、5-第三丁基-間二甲苯、3,5-二-第三丁基甲苯、1,2,3,5-四甲基苯、1,2,4,5-四甲基苯、五甲基苯等芳香族烴類; 檸檬烯、對薄荷烷、壬烷、癸烷、十二烷、十氫萘等烴類等。 該些中較佳為均三甲苯、第三丁基苯、1,2,4-三甲基苯、對薄荷烷、γ-丁內酯、苯甲醚、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯,更佳為均三甲苯。<<Solvent>> The temporary adhesive of the present invention preferably contains a solvent. In particular, when forming an adhesive layer by applying the temporary adhesive of the present invention, it is preferable to prepare a solvent. A known solvent can be used without limitation, and an organic solvent is preferred. Examples of organic solvents include ethyl acetate, n-butyl acetate, isobutyl acetate, pentyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, Ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, alkyl oxyacetate (for example: methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (for example, methoxyacetic acid) Methyl ester, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), 3-oxypropionic acid alkyl esters (for example: 3-oxy Methyl propionate, ethyl 3-oxypropionate, etc. (such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3-ethyl Oxypropionate, etc.)), 2-oxypropionic acid alkyl esters (for example: 2-oxypropionic acid methyl ester, 2-oxypropionic acid ethyl ester, 2-oxypropionic acid propyl ester, etc. (For example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate Ester)), methyl 2-oxy-2-methylpropionate and ethyl 2-oxy-2-methylpropionate (such as methyl 2-methoxy-2-methylpropionate, 2- Ethoxy-2-methyl propionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetylacetate, ethyl acetylacetate, methyl 2-oxobutyrate , 2-oxobutyrate ethyl ester, 1-methoxy-2-propyl acetate and other esters; Diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, Methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether Acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate and other ethers; methyl ethyl ketone, cyclohexanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrole Ketones such as pyridone and γ-butyrolactone; toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene, n-butylbenzene, sec-butylbenzene, isobutyl Benzene, tertiary butylbenzene, pentylbenzene, isopentylbenzene, (2,2-dimethylpropyl)benzene, 1-phenylhexane, 1-phenylheptane, 1-phenyloctane , 1-phenylnonane, 1-phenyldecane, cyclopropylbenzene, cyclohexylbenzene, 2-ethyltoluene, 1,2-diethylbenzene, o-isopropyl toluene, indan, 1 , 2,3,4-Tetrahydronaphthalene, 3-ethyltoluene, m-isopropyl toluene, 1,3-diisopropylbenzene, 4-ethyltoluene, 1,4-diethylbenzene, p- -Cumene, 1,4-Diisopropylbenzene, 4-tert-butyltoluene, 1,4-di-tert-butylbenzene, 1,3-diethylbenzene, 1,2,3 -Trimethylbenzene, 1,2,4-trimethylbenzene, 4-tert-butyl-o-xylene, 1,2,4-triethylbenzene, 1,3,5-triethylbenzene, 1,3,5-Triisopropylbenzene, 5-tert-butyl-m-xylene, 3,5-di-tert-butyltoluene, 1,2,3,5-tetramethylbenzene, 1, Aromatic hydrocarbons such as 2,4,5-tetramethylbenzene, pentamethylbenzene; limonene, p-menthane, nonane, Hydrocarbons such as decane, dodecane, decalin, etc. Among these, mesitylene, tertiary butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, anisole, and methyl 3-ethoxypropionate are preferred. , Ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone , Cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate, more preferably mesitylene.

就改良塗佈面性狀等觀點而言,該些溶劑亦較佳為混合兩種以上的形態。於該情況下,特佳為如下的混合溶液,其包含選自均三甲苯、第三丁基苯、1,2,4-三甲基苯、對薄荷烷、γ-丁內酯、苯甲醚、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯中的兩種以上。From the viewpoint of improving coating surface properties, etc., these solvents are also preferably in a form in which two or more kinds of them are mixed. In this case, it is particularly preferable to be a mixed solution containing selected from mesitylene, tertiary butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, and benzyl Ether, 3-ethoxy methyl propionate, 3-ethoxy ethyl propionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, 3-methyl Two or more of methyl oxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate .

於暫時接著劑含有溶劑的情況下,就塗佈性的觀點而言,暫時接著劑的溶劑的含量較佳為暫時接著劑的總固體成分濃度成為5質量%~80質量%的量,進而更佳為10質量%~50質量%,特佳為15質量%~40質量%。 溶劑可僅為一種,亦可為兩種以上。於溶劑為兩種以上的情況下,較佳為其合計為所述範圍。 另外,如後所述般,於在接著膜或接著性支持體的接著層中使用本發明的暫時接著劑的情況下,溶劑含有率較佳為1質量%以下,更佳為0.1質量%以下,特佳為不含。When the temporary adhesive contains a solvent, from the viewpoint of coatability, the content of the solvent of the temporary adhesive is preferably such that the total solid content concentration of the temporary adhesive becomes 5 mass% to 80 mass %, and more It is preferably 10% by mass to 50% by mass, and particularly preferably 15% by mass to 40% by mass. The solvent may be only one type or two or more types. When there are two or more kinds of solvents, it is preferable that the total amount is the above-mentioned range. In addition, as described later, when the temporary adhesive of the present invention is used in the adhesive layer of an adhesive film or an adhesive support, the solvent content is preferably 1% by mass or less, more preferably 0.1% by mass or less , It is especially good to not contain.

<<自由基聚合性化合物>> 本發明的暫時接著劑亦較佳為包含自由基聚合性化合物。藉由使用包含自由基聚合性化合物的暫時接著劑,而容易抑制加熱時的接著層的流動變形。因此,例如當對研磨基材後的積層體進行加熱處理時等,可抑制加熱時的接著層的流動變形,從而可有效地抑制翹曲的產生。另外,可形成具有硬度的接著層,因此即便於研磨基材時局部地施加壓力,接著層亦不易發生變形,平坦研磨性優異。<<radical polymerizable compound>> The temporary adhesive of the present invention also preferably contains a radical polymerizable compound. By using a temporary adhesive containing a radically polymerizable compound, it is easy to suppress flow deformation of the adhesive layer during heating. Therefore, for example, when heat-treating the laminated body after polishing the base material, the flow deformation of the adhesive layer during heating can be suppressed, and the occurrence of warpage can be effectively suppressed. In addition, an adhesive layer having hardness can be formed. Therefore, even if pressure is applied locally when polishing the base material, the adhesive layer is not easily deformed, and the flat abrasiveness is excellent.

於本發明中,自由基聚合性化合物為具有自由基聚合性基的化合物,且可使用可藉由自由基進行聚合的公知的自由基聚合性化合物。此種化合物為於本領域中廣泛為人所知者,於本發明中可並無特別限定地使用該些。該些例如可為單體、預聚物、寡聚物或該些的混合物及該些的多聚體等化學形態的任一種。作為自由基聚合性化合物,可參考日本專利特開2015-087611號公報的段落0099~段落0180的記載,該些內容被併入至本說明書中。In the present invention, the radically polymerizable compound is a compound having a radically polymerizable group, and a known radically polymerizable compound that can be polymerized by radicals can be used. Such compounds are widely known in the art, and they can be used in the present invention without particular limitation. These may be, for example, monomers, prepolymers, oligomers, mixtures of these, and any of these multimers. As a radically polymerizable compound, the description of paragraph 0099 to paragraph 0180 of JP-A-2015-087611 can be referred to, and these contents are incorporated in this specification.

另外,作為自由基聚合性化合物,亦較佳為如日本專利特公昭48-41708號公報、日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報所記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類。進而,亦可使用日本專利特開昭63-277653號公報、日本專利特開昭63-260909號公報、日本專利特開平1-105238號公報中所記載的分子內具有胺基結構或硫醚結構的加成聚合性單體類作為自由基聚合性化合物。In addition, as the radically polymerizable compound, preferred are Japanese Patent Publication No. 48-41708, Japanese Patent Publication No. 51-37193, Japanese Patent Publication No. 2-32293, and Japanese Patent Publication No. 2 The urethane acrylates described in -16765, or Japanese Patent Publication No. 58-49860, Japanese Patent Publication No. 56-17654, Japanese Patent Publication No. 62-39417, Japanese Patent Publication No. 62 Urethane compounds having an ethylene oxide-based skeleton described in Bulletin -39418. Furthermore, it is also possible to use the amine structure or thioether structure described in Japanese Patent Laid-Open No. 63-277653, Japanese Patent Laid-Open No. 63-260909, and Japanese Patent Laid-Open No. 1-105238. The addition polymerizable monomers are used as radical polymerizable compounds.

作為自由基聚合性化合物的市售品,可列舉:胺基甲酸酯寡聚物UAS-10、UAB-140(山陽國策紙漿(Sanyo Kokusaku Pulp)公司製造);NK酯M-40G、NK酯4G、NK酯A-9300、NK酯M-9300、NK酯A-TMMT、NK酯A-DPH、NK酯A-BPE-4、UA-7200(新中村化學公司製造);DPHA-40H(日本化藥公司製造);UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共榮社化學(股)製造);布蘭莫(Blemmer)PME400(日油(股)製造)等。Commercial products of radical polymerizable compounds include: urethane oligomer UAS-10, UAB-140 (manufactured by Sanyo Kokusaku Pulp); NK ester M-40G, NK ester 4G, NK ester A-9300, NK ester M-9300, NK ester A-TMMT, NK ester A-DPH, NK ester A-BPE-4, UA-7200 (manufactured by Shin Nakamura Chemical Co.); DPHA-40H (Japan Chemical Pharmaceuticals Corporation); UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.); Blemmer PME400 (Nippon Oil (Stock) Manufacturing) and so on.

於本發明中,就耐熱性的觀點而言,自由基聚合性化合物較佳為具有下述(P-1)~(P-4)所表示的部分結構的至少一種,進而更佳為具有下述(P-3)所表示的部分結構。式中的*為連結鍵。In the present invention, from the viewpoint of heat resistance, the radically polymerizable compound preferably has at least one of the partial structures represented by the following (P-1) to (P-4), and more preferably has the following Part of the structure shown in (P-3). The * in the formula is the link key.

[化2]

Figure 02_image005
[化2]
Figure 02_image005

作為具有所述部分結構的自由基聚合性化合物的具體例,例如可列舉三羥甲基丙烷三(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質二(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質三(甲基)丙烯酸酯、異氰脲酸三烯丙酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等,於本發明中,可特佳地使用該些的自由基聚合性化合物。As specific examples of the radically polymerizable compound having the partial structure, for example, trimethylolpropane tri(meth)acrylate, isocyanurate ethylene oxide modified di(meth)acrylate, Isocyanuric acid ethylene oxide modification tri(meth)acrylate, triallyl isocyanurate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dimethylolpropane Tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, etc., can be particularly preferred in the present invention These radically polymerizable compounds are used.

於本發明的暫時接著劑中,就良好的接著性、平坦研磨性、剝離性、翹曲抑制的觀點而言,相對於除了溶劑以外的暫時接著劑的質量,添加自由基聚合性化合物時的含量較佳為1質量%~50質量%,更佳為1質量%~30質量%,進而更佳為5質量%~30質量%。自由基聚合性化合物可單獨使用一種,亦可混合使用兩種以上。 另外,於本發明的暫時接著劑中,添加自由基聚合性化合物時的彈性體與自由基聚合性化合物的質量比例較佳為彈性體:自由基聚合性化合物=98:2~10:90,更佳為95:5~30:70,特佳為90:10~50:50。若彈性體與自由基聚合性化合物的質量比例為所述範圍,則可形成接著性、平坦研磨性、剝離性及翹曲抑制優異的接著層。In the temporary adhesive of the present invention, from the viewpoints of good adhesiveness, flat abrasiveness, releasability, and warpage suppression, compared to the mass of the temporary adhesive other than the solvent, when a radically polymerizable compound is added The content is preferably 1% by mass to 50% by mass, more preferably 1% by mass to 30% by mass, and still more preferably 5% by mass to 30% by mass. A radically polymerizable compound may be used individually by 1 type, and may mix and use 2 or more types. In addition, in the temporary adhesive of the present invention, the mass ratio of elastomer to radical polymerizable compound when the radical polymerizable compound is added is preferably elastomer: radical polymerizable compound=98:2-10:90, More preferably, it is 95:5 to 30:70, particularly preferably 90:10 to 50:50. If the mass ratio of the elastomer to the radical polymerizable compound is in the above range, an adhesive layer excellent in adhesiveness, flat abrasiveness, releasability, and warpage suppression can be formed.

<<高分子化合物>> 為了調節塗佈性、接著性、脫模性或耐熱性等,本發明的暫時接著劑亦可視需要具有所述矽系液體狀化合物及彈性體以外的高分子化合物。再者,此處所述的塗佈性是指塗佈後的膜厚的均勻性或塗佈後的膜形成性。 於本發明中,高分子化合物可使用任意者。高分子化合物是不含聚合性基的化合物。高分子化合物的重量平均分子量較佳為10,000~1,000,000,更佳為50,000~500,000,進而更佳為100,000~300,000。 作為高分子化合物的具體例,例如可列舉:烴樹脂、酚醛清漆樹脂、酚樹脂、環氧樹脂、三聚氰胺樹脂、脲樹脂、不飽和聚酯樹脂、醇酸樹脂、聚醯亞胺樹脂、聚氯乙烯樹脂、聚乙酸乙烯酯樹脂、鐵氟龍(Teflon)(註冊商標)、聚醯胺樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚苯醚樹脂、聚對苯二甲酸丁二酯樹脂、聚對苯二甲酸乙二酯樹脂、聚苯硫醚樹脂、聚碸樹脂、聚醚碸樹脂、聚芳烴酯樹脂、聚醚醚酮樹脂、聚醯胺醯亞胺樹脂等。其中,較佳為烴樹脂、酚醛清漆樹脂、聚醯亞胺樹脂,更佳為烴樹脂。高分子化合物亦可視需要組合使用兩種以上。<<Polymer compound>> In order to adjust coatability, adhesiveness, mold releasability, heat resistance, etc., the temporary adhesive of the present invention may optionally have a polymer compound other than the silicon-based liquid compound and elastomer. In addition, the coatability mentioned here refers to the uniformity of the film thickness after coating or the film formability after coating. In the present invention, any polymer compound can be used. The polymer compound is a compound that does not contain a polymerizable group. The weight average molecular weight of the polymer compound is preferably 10,000 to 1,000,000, more preferably 50,000 to 500,000, and still more preferably 100,000 to 300,000. Specific examples of polymer compounds include, for example, hydrocarbon resins, novolac resins, phenol resins, epoxy resins, melamine resins, urea resins, unsaturated polyester resins, alkyd resins, polyimide resins, and polychlorinated resins. Vinyl resin, polyvinyl acetate resin, Teflon (registered trademark), polyamide resin, polyacetal resin, polycarbonate resin, polyphenylene ether resin, polybutylene terephthalate resin, Polyethylene terephthalate resin, polyphenylene sulfide resin, polysulfide resin, polyether sulfide resin, polyarylene ester resin, polyether ether ketone resin, polyamide imide resin, etc. Among them, preferred are hydrocarbon resins, novolac resins, and polyimide resins, and more preferred are hydrocarbon resins. The polymer compound can also be used in combination of two or more types as required.

可使用任意者作為烴樹脂。 烴樹脂是指基本上僅包含碳原子與氫原子的樹脂,若成為基本的骨架為烴樹脂,則亦可含有其他原子作為側鏈。即,除了僅包含碳原子與氫原子的烴樹脂以外,如丙烯酸樹脂、聚乙烯基醇樹脂、聚乙烯基縮醛樹脂、聚乙烯基吡咯啶酮樹脂般,烴基以外的官能基直接鍵結於主鏈的情況亦包含於本發明中的烴樹脂中,該情況下,烴基直接鍵結於主鏈而成的重複單元的含量較佳為相對於樹脂的所有重複單元而為30莫耳%以上。 作為符合所述條件的烴樹脂,例如可列舉:萜烯樹脂、萜烯酚樹脂、改質萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂、松香(rosin)、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、改質松香、松香改質酚樹脂、烷基酚樹脂、脂肪族石油樹脂、芳香族石油樹脂、氫化石油樹脂、改質石油樹脂、脂環族石油樹脂、香豆酮石油樹脂、茚石油樹脂等。 其中,烴樹脂較佳為萜烯樹脂、松香、石油樹脂、氫化松香、聚合松香,更佳為萜烯樹脂、松香。Any one can be used as the hydrocarbon resin. The hydrocarbon resin basically refers to a resin containing only carbon atoms and hydrogen atoms, and if the basic skeleton is a hydrocarbon resin, it may contain other atoms as a side chain. That is, in addition to hydrocarbon resins containing only carbon atoms and hydrogen atoms, such as acrylic resins, polyvinyl alcohol resins, polyvinyl acetal resins, and polyvinylpyrrolidone resins, functional groups other than hydrocarbon groups are directly bonded to The case of the main chain is also included in the hydrocarbon resin of the present invention. In this case, the content of the repeating unit formed by directly bonding the hydrocarbon group to the main chain is preferably 30 mol% or more with respect to all the repeating units of the resin. . Examples of hydrocarbon resins that meet the above conditions include terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, hydrogenated terpene phenol resins, rosin, rosin esters, hydrogenated rosin, Hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, modified rosin, rosin modified phenol resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin , Coumarone petroleum resin, indene petroleum resin, etc. Among them, the hydrocarbon resin is preferably terpene resin, rosin, petroleum resin, hydrogenated rosin, and polymerized rosin, and more preferably terpene resin and rosin.

就改良塗佈性、脫模性及耐熱性的觀點而言,較佳為含有具有氟原子的非三維交聯結構的高分子化合物。所謂非三維交聯結構,是指化合物中不含交聯結構,或者形成三維交聯結構的交聯結構相對於化合物中的所有交聯結構的比例為5%以下,較佳為1%以下。作為具有氟原子的非三維交聯結構的高分子化合物,可較佳地使用包含一種或兩種以上的含氟單官能單體的聚合物。更具體而言,可列舉選自如下聚合物中的至少一種的含氟樹脂等:選自四氟乙烯、六氟丙烯、四氟環氧乙烷、六氟環氧丙烷、全氟烷基乙烯基醚、氯三氟乙烯、偏二氟乙烯、含有全氟烷基的(甲基)丙烯酸酯中的一種或兩種以上的含氟單官能單體的均聚物或該些單體的共聚物、含氟單官能單體的一種或兩種以上與乙烯的共聚物、含氟單官能單體的一種或兩種以上與氯三氟乙烯的共聚物。From the viewpoint of improving coatability, mold releasability, and heat resistance, a polymer compound containing a non-three-dimensional crosslinked structure having a fluorine atom is preferred. The so-called non-three-dimensional cross-linked structure means that the compound does not contain a cross-linked structure, or the ratio of the cross-linked structure forming the three-dimensional cross-linked structure to all the cross-linked structures in the compound is 5% or less, preferably 1% or less. As the polymer compound having a non-three-dimensional crosslinked structure of fluorine atoms, a polymer containing one or two or more fluorine-containing monofunctional monomers can be preferably used. More specifically, at least one fluorine-containing resin selected from the following polymers can be cited: selected from tetrafluoroethylene, hexafluoropropylene, tetrafluoroethylene oxide, hexafluoropropylene oxide, and perfluoroalkylethylene A homopolymer of one or two or more of fluorine-containing monofunctional monomers or copolymers of these monomers among the fluorine-containing monofunctional monomers among the base ethers, chlorotrifluoroethylene, vinylidene fluoride, and (meth)acrylates containing perfluoroalkyl groups A copolymer of one or more of fluorine-containing monofunctional monomers and ethylene, and a copolymer of one or more of fluorine-containing monofunctional monomers and chlorotrifluoroethylene.

作為具有氟原子的非三維交聯結構的高分子化合物,較佳為可由含有全氟烷基的(甲基)丙烯酸酯合成的含有全氟烷基的(甲基)丙烯酸樹脂。 作為含有全氟烷基的(甲基)丙烯酸酯,具體而言,較佳為下述式(101)所表示的化合物。As a polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom, a (meth)acrylic resin containing a perfluoroalkyl group which can be synthesized from a (meth)acrylate containing a perfluoroalkyl group is preferred. As the (meth)acrylate containing a perfluoroalkyl group, specifically, the compound represented by following formula (101) is preferable.

式(101) [化3]

Figure 02_image007
Formula (101) [Change 3]
Figure 02_image007

通式(101)中,R101 、R102 、R103 分別獨立地表示氫原子、烷基、或鹵素原子。Y101 表示單鍵、或者選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些的組合所組成的群組中的二價連結基。Rf為氟原子或具有至少一個氟原子的一價有機基。In the general formula (101), R 101 , R 102 , and R 103 each independently represent a hydrogen atom, an alkyl group, or a halogen atom. Y 101 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these. Rf is a fluorine atom or a monovalent organic group having at least one fluorine atom.

通式(101)中,R101 、R102 、R103 所表示的烷基的例子較佳為碳數1~8的烷基,例如可列舉:甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基的例子較佳為碳數6~12的芳基,可列舉:苯基、1-萘基、2-萘基等。其中,作為R101 ~R103 ,較佳為氫原子或甲基。In the general formula (101), examples of the alkyl groups represented by R 101 , R 102 , and R 103 are preferably alkyl groups having 1 to 8 carbon atoms, for example, methyl, ethyl, propyl, octyl, Isopropyl, tert-butyl, isopentyl, 2-ethylhexyl, 2-methylhexyl, cyclopentyl, etc. Examples of the aryl group are preferably aryl groups having 6 to 12 carbons, and examples thereof include phenyl, 1-naphthyl, 2-naphthyl, and the like. Among them, R 101 to R 103 are preferably a hydrogen atom or a methyl group.

Y101 表示單鍵、或者選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些的組合所組成的群組中的二價連結基,關於二價脂肪族基,相較於環狀結構而言,較佳為鏈狀結構,進而相較於具有分支的鏈狀結構而言,較佳為直鏈狀結構。二價脂肪族基的氫原子數較佳為1~20,更佳為1~15,進而更佳為1~12,尤佳為1~10,進而尤佳為1~8,特佳為1~4。 作為二價芳香族基的例子,可列舉伸苯基、經取代的伸苯基、伸萘基及經取代的伸萘基,較佳為伸苯基。 作為Y101 ,較佳為二價直鏈狀結構的脂肪族基。Y 101 represents a single bond, or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these, regarding The divalent aliphatic group is preferably a chain structure compared to a cyclic structure, and furthermore, a linear structure is preferable compared to a branched chain structure. The number of hydrogen atoms of the divalent aliphatic group is preferably 1-20, more preferably 1-15, still more preferably 1-12, particularly preferably 1-10, still more preferably 1-8, particularly preferably 1. ~4. Examples of the divalent aromatic group include phenylene, substituted phenylene, naphthylene, and substituted naphthylene, and phenylene is preferred. As Y 101 , an aliphatic group having a divalent linear structure is preferable.

作為Rf所表示的具有氟原子的一價有機基,並無特別限定,較佳為碳數1~30的含氟烷基,更佳為碳數1~20,特佳為碳數1~15的含氟烷基。該含氟烷基可為直鏈{例如-CF2 CF3 、-CH2 (CF2 )4 H、-CH2 (CF2 )8 CF3 、-CH2 CH2 (CF2 )4 H等},亦可具有分支結構{例如-CH(CF3 )2 、-CH2 CF(CF3 )2 、-CH(CH3 )CF2 CF3 、-CH(CH3 )(CF2 )5 CF2 H等},另外,可具有脂環式結構(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經該些取代而成的烷基等),亦可具有醚鍵(例如-CH2 OCH2 CF2 CF3 、-CH2 CH2 OCH2 C4 F8 H、-CH2 CH2 OCH2 CH2 C8 F17 、-CH2 CF2 OCF2 CF2 OCF2 CF2 H等)。另外,亦可為全氟烷基。The monovalent organic group having a fluorine atom represented by Rf is not particularly limited, but is preferably a fluorinated alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 15 carbon atoms的Fluorinated alkyl group. The fluorine-containing alkyl group can be straight chain {e.g. -CF 2 CF 3 , -CH 2 (CF 2 ) 4 H, -CH 2 (CF 2 ) 8 CF 3 , -CH 2 CH 2 (CF 2 ) 4 H, etc. }, can also have a branched structure {e.g. -CH(CF 3 ) 2 , -CH 2 CF(CF 3 ) 2 , -CH(CH 3 )CF 2 CF 3 , -CH(CH 3 )(CF 2 ) 5 CF 2 H etc.}, in addition, it may have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as perfluorocyclohexyl, perfluorocyclopentyl or alkyl substituted by these, etc.), and May have ether bonds (for example -CH 2 OCH 2 CF 2 CF 3 , -CH 2 CH 2 OCH 2 C 4 F 8 H, -CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H, etc.). In addition, it may be a perfluoroalkyl group.

作為含有全氟烷基的(甲基)丙烯酸樹脂,具體而言,具有下述式(102)所表示的重複單元。 式(102) [化4]

Figure 02_image009
The (meth)acrylic resin containing a perfluoroalkyl group specifically has a repeating unit represented by the following formula (102). Formula (102) [化4]
Figure 02_image009

通式(102)中,R101 、R102 、R103 、Y101 、Rf分別與通式(101)中的R101 、R102 、R103 、Y101 、Rf為相同含義,較佳的態樣亦相同。In the general formula (102), R 101, R 102, R 103, Y 101, Rf each state the general formula R 101 (101) is, R 102, R 103, Y 101, Rf is the same meaning, preferably The same is true.

就剝離性的觀點而言,除了含有全氟烷基的(甲基)丙烯酸酯以外,含有全氟烷基的(甲基)丙烯酸樹脂可任意選擇共聚成分。作為可形成共聚成分的自由基聚合性化合物,例如可列舉選自丙烯酸酯類、甲基丙烯酸酯類、N,N-2取代丙烯醯胺類、N,N-2取代甲基丙烯醯胺類、苯乙烯類、丙烯腈類、甲基丙烯腈類等中的自由基聚合性化合物。From the standpoint of releasability, in addition to the (meth)acrylate containing a perfluoroalkyl group, the (meth)acrylic resin containing a perfluoroalkyl group can optionally select a copolymer component. Examples of radical polymerizable compounds that can form copolymerization components include acrylates, methacrylates, N,N-2 substituted acrylamides, and N,N-2 substituted methacrylamides. , Styrene, acrylonitrile, methacrylonitrile and other radical polymerizable compounds.

更具體而言,例如可列舉:丙烯酸烷基酯(較佳為烷基的碳原子數為1~20者)等丙烯酸酯類(例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸乙基己酯、丙烯酸辛酯、丙烯酸第三辛酯、丙烯酸氯乙酯、丙烯酸-2,2-二甲基羥基丙酯、丙烯酸-5-羥基戊酯、三羥甲基丙烷單丙烯酸酯、季戊四醇單丙烯酸酯、丙烯酸縮水甘油酯、丙烯酸苄基酯、丙烯酸甲氧基苄基酯、丙烯酸糠基酯、丙烯酸四氫糠基酯等);丙烯酸芳基酯(例如丙烯酸苯基酯等);甲基丙烯酸烷基酯(較佳為烷基的碳原子數為1~20者)等甲基丙烯酸酯類(例如甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、甲基丙烯酸戊酯、甲基丙烯酸己酯、甲基丙烯酸環己酯、甲基丙烯酸苄基酯、甲基丙烯酸氯苄基酯、甲基丙烯酸辛酯、甲基丙烯酸-4-羥基丁酯、甲基丙烯酸-5-羥基戊酯、甲基丙烯酸-2,2-二甲基-3-羥基丙酯、三羥甲基丙烷單甲基丙烯酸酯、季戊四醇單甲基丙烯酸酯、甲基丙烯酸縮水甘油酯、甲基丙烯酸糠基酯、甲基丙烯酸四氫糠基酯等);甲基丙烯酸芳基酯(例如甲基丙烯酸苯基酯、甲基丙烯酸甲苯酚基酯、甲基丙烯酸萘基酯等);苯乙烯,烷基苯乙烯等苯乙烯(例如甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙基、苄基苯乙烯、氯甲基苯乙烯、三氟甲基苯乙烯、乙氧基甲基苯乙烯、乙醯氧基甲基苯乙烯等),烷氧基苯乙烯(例如甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等),鹵素苯乙烯(例如氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等);丙烯腈;甲基丙烯腈;含有丙烯酸、羧酸的自由基聚合性化合物(丙烯酸、甲基丙烯酸、衣康酸、丁烯酸、異丁烯酸、順丁烯二酸、對羧基苯乙烯及該些的酸基的金屬鹽、銨鹽化合物等),就剝離性的觀點而言,特佳為具有碳數1~24的烴基的(甲基)丙烯酸酯,例如可列舉(甲基)丙烯酸的甲酯、丁酯、2-乙基己酯、月桂基酯、硬脂基酯、縮水甘油酯等,較佳為2-乙基己基、月桂基、硬脂基等高級醇的(甲基)丙烯酸酯,特佳為丙烯酸酯。More specifically, for example, acrylic acid esters (such as methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate) such as alkyl acrylate (preferably one having 1 to 20 carbon atoms in the alkyl group) are mentioned. , Amyl acrylate, ethylhexyl acrylate, octyl acrylate, third octyl acrylate, chloroethyl acrylate, 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylol Propane monoacrylate, pentaerythritol monoacrylate, glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate, etc.); aryl acrylate (such as acrylic acid Phenyl esters, etc.); methacrylates such as alkyl methacrylates (preferably those with 1 to 20 carbon atoms in the alkyl group) (for example, methyl methacrylate, ethyl methacrylate, methyl Propyl acrylate, isopropyl methacrylate, pentyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate , 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, Pentaerythritol monomethacrylate, glycidyl methacrylate, furfuryl methacrylate, tetrahydrofurfuryl methacrylate, etc.); aryl methacrylate (such as phenyl methacrylate, methacrylic acid) Cresyl ester, naphthyl methacrylate, etc.); styrene, alkyl styrene and other styrenes (such as methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, etc.) Styrene, isopropyl styrene, butyl styrene, hexyl styrene, cyclohexyl styrene, decyl phenethyl, benzyl styrene, chloromethyl styrene, trifluoromethyl styrene, ethoxy Methyl styrene, acetoxy methyl styrene, etc.), alkoxy styrene (such as methoxy styrene, 4-methoxy-3-methyl styrene, dimethoxy styrene, etc.) ), halogen styrene (such as chlorostyrene, dichlorostyrene, trichlorostyrene, tetrachlorostyrene, pentachlorostyrene, bromostyrene, dibromostyrene, iodostyrene, fluorostyrene, trifluorostyrene Styrene, 2-bromo-4-trifluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc.); Acrylonitrile; Methacrylonitrile; Free radical polymerizable compounds containing acrylic acid and carboxylic acid (Acrylic acid, methacrylic acid, itaconic acid, crotonic acid, methacrylic acid, maleic acid, p-carboxystyrene, and metal salts and ammonium salt compounds of these acid groups, etc.), from the standpoint of releasability In particular, (meth)acrylates having a hydrocarbon group having 1 to 24 carbon atoms are particularly preferred, and examples include methyl, butyl, 2-ethylhexyl, lauryl, and stearyl (meth)acrylates. Esters, glycidyl esters, etc. are preferably (meth)acrylates of higher alcohols such as 2-ethylhexyl, lauryl, and stearyl, and particularly preferably acrylates.

具有氟原子的非三維交聯結構的高分子化合物亦可使用市售品。例如可列舉:鐵氟龍(Teflon)(註冊商標)(杜邦(Du Pont)公司)、鐵氟紮(Tefzel)(杜邦(Du Pont)公司)、氟隆(Fluon)(旭硝子公司)、海伊拉(Heira)(蘇威蘇萊克斯(SolvaySolexis)公司)、哈伊拉(Heiler)(蘇威蘇萊克斯(SolvaySolexis)公司)、魯米氟隆(Lumiflon)(旭硝子公司)、阿弗拉斯(Aflas)(旭硝子公司)、希特普(Cytop)(旭硝子公司)、塞夫索特(Cefralsoft)(中央硝子(Central Glass)公司)、塞夫考特(Cefralcoat)(中央硝子(Central Glass)公司)、迪奈恩(Dyneon)(3M公司)等氟樹脂;威登(Viton)(杜邦(Du Pont)公司)、卡爾萊茲(Kalrez)(杜邦(Du Pont)公司)、喜富勒(SIFEL)(信越化學工業公司)等商標名的氟橡膠;庫拉托斯(Krytox)(杜邦(Du Pont)公司)、氟必琳(Fomblin)(大德科技(Daitoku Tech)公司)、戴姆納姆(Demnum)(大金(Daikin)工業公司)等以全氟聚醚油為代表的各種氟油;或戴氟琳(Daifree)FB系列(大金(Daikin)工業公司)、美佳法(Megafac)系列(迪愛生(DIC)公司)等商標名的含有氟的脫模劑等。The polymer compound having a non-three-dimensional crosslinked structure of fluorine atoms can also be commercially available. Examples include: Teflon (registered trademark) (Du Pont), Tefzel (Du Pont), Fluon (Asahi Glass Company), Hey Heira (SolvaySolexis), Heiler (SolvaySolexis), Lumiflon (Asahi Glass Company), Afras (Aflas) (Asahi Glass Company), Cytop (Asahi Glass Company), Cefralsoft (Central Glass Company), Cefralcoat (Central Glass) Company), Dyneon (3M Company) and other fluororesins; Viton (Du Pont), Kalrez (Du Pont), Hifuler ( SIFEL (Shin-Etsu Chemical Industry Co., Ltd.) and other brand names of fluoroelastomers; Krytox (Du Pont), Fomblin (Daitoku Tech), Daim Demnum (Daikin Industrial Company) and various fluorine oils represented by perfluoropolyether oil; or Daifree FB series (Daikin Industrial Company), Megafa ( Megafac) series (DIC company) and other brand names containing fluorine-containing mold release agents.

具有氟原子的非三維交聯結構的高分子化合物的利用凝膠滲透層析(GPC)法所得的聚苯乙烯換算的重量平均分子量較佳為100000~2000,更佳為50000~2000,最佳為10000~2000。The weight average molecular weight of the non-three-dimensional crosslinked polymer compound having a fluorine atom in terms of polystyrene obtained by the gel permeation chromatography (GPC) method is preferably 100,000 to 2,000, more preferably 50,000 to 2,000, most preferably It is 10000~2000.

於本發明的暫時接著劑含有所述矽系液體狀化合物及彈性體以外的高分子化合物的情況下,其含量相對於暫時接著劑的總固體成分而較佳為0.01質量%~60質量%,更佳為0.05質量%~50質量%,進而更佳為0.1質量%~30質量%。When the temporary adhesive of the present invention contains the silicon-based liquid compound and a polymer compound other than the elastomer, its content is preferably 0.01% by mass to 60% by mass relative to the total solid content of the temporary adhesive. It is more preferably 0.05% by mass to 50% by mass, and still more preferably 0.1% by mass to 30% by mass.

<<界面活性劑>> 本發明的暫時接著劑亦可含有界面活性劑。此處所述的界面活性劑中不含矽系液體狀化合物。 作為界面活性劑,可使用陰離子系、陽離子系、非離子系或兩性的任一種,較佳的界面活性劑為非離子系界面活性劑。 作為非離子系界面活性劑的較佳例,可列舉:聚氧乙烯高級烷基醚類、聚氧乙烯高級烷基苯基醚類、聚氧乙烯二醇的高級脂肪酸二酯類、氟系界面活性劑。 作為界面活性劑的具體例,可參考日本專利特開2015-065401號公報的段落0173~段落0177的記載,該些內容被併入至本說明書中。 就塗佈性的觀點而言,相對於暫時接著劑的總固體成分,暫時接著劑中的界面活性劑的含量較佳為0.001質量%~5質量%,進而更佳為0.005質量%~1質量%,特佳為0.01質量%~0.5質量%。界面活性劑可僅為一種,亦可為兩種以上。於界面活性劑為兩種以上的情況下,較佳為其合計為所述範圍。<<Surfactant>> The temporary adhesive of the present invention may contain a surfactant. The surfactants described here do not contain silicon-based liquid compounds. As the surfactant, any of anionic, cationic, nonionic, or amphoteric can be used, and a preferred surfactant is a nonionic surfactant. Preferred examples of nonionic surfactants include: polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, and fluorine-based interface Active agent. As a specific example of the surfactant, the description of paragraph 0173 to paragraph 0177 of JP-A-2015-065401 can be referred to, and these contents are incorporated into this specification. From the viewpoint of coatability, relative to the total solid content of the temporary adhesive, the content of the surfactant in the temporary adhesive is preferably 0.001% by mass to 5% by mass, and more preferably 0.005% by mass to 1% by mass %, particularly preferably 0.01% by mass to 0.5% by mass. The surfactant may be only one type or two or more types. When there are two or more surfactants, it is preferable that the sum total is the said range.

<<氟系液體狀化合物>> 就改良塗佈性或脫模性的觀點而言,本發明的暫時接著劑亦較佳為含有氟系液體狀化合物。 此處,所謂液體狀化合物是指於25℃下具有流動性的化合物、例如25℃下的黏度為1 mPa·s~100,000 mPa·s的化合物。 氟系液體狀化合物的25℃下的黏度例如更佳為10 mPa·s~20,000 mPa·s,尤佳為100 mPa·s~15,000 mPa·s。若氟系液體狀化合物的黏度為所述範圍,則氟系液體狀化合物容易偏向存在於接著層的表層。<<Fluorine-based liquid compound>> From the viewpoint of improving coatability or mold releasability, the temporary adhesive of the present invention also preferably contains a fluorine-based liquid compound. Here, the liquid compound refers to a compound having fluidity at 25°C, for example, a compound having a viscosity of 1 mPa·s to 100,000 mPa·s at 25°C. The viscosity at 25°C of the fluorine-based liquid compound is, for example, more preferably 10 mPa·s to 20,000 mPa·s, and particularly preferably 100 mPa·s to 15,000 mPa·s. If the viscosity of the fluorine-based liquid compound is in the above range, the fluorine-based liquid compound tends to be concentrated on the surface layer of the adhesive layer.

氟系液體狀化合物亦可較佳地使用寡聚物、聚合物的任一形態的化合物。另外,亦可為寡聚物與聚合物的混合物。所述混合物亦可進而含有單體。另外,氟系液體狀化合物亦可為單體。 就耐熱性等觀點而言,氟系液體狀化合物較佳為寡聚物、聚合物及該些的混合物。 作為寡聚物、聚合物,例如可列舉自由基聚合物、陽離子聚合物、陰離子聚合物等,可較佳地使用任一種。特佳為乙烯基系聚合物。 氟系液體狀化合物的重量平均分子量較佳為500~100000,更佳為1000~50000,進而更佳為2000~20000。As the fluorine-based liquid compound, compounds in any form of oligomers and polymers can also be preferably used. In addition, it may be a mixture of oligomer and polymer. The mixture may further contain monomers. In addition, the fluorine-based liquid compound may be a monomer. From the viewpoint of heat resistance and the like, the fluorine-based liquid compound is preferably an oligomer, a polymer, and a mixture of these. Examples of oligomers and polymers include radical polymers, cationic polymers, and anionic polymers, and any of them can be preferably used. Particularly preferred is a vinyl-based polymer. The weight average molecular weight of the fluorine-based liquid compound is preferably 500 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 20,000.

氟系液體狀化合物較佳為當對供於暫時接著的基材進行處理時不會改質的化合物。例如,較佳為即便於250℃以上進行加熱或利用各種化學藥液對基材進行處理後亦可以液體狀存在的化合物。作為具體的一例,較佳為於自25℃的狀態以10℃/min的昇溫條件加熱至250℃後,冷卻至25℃後的25℃下的黏度為1 mPa·s~100,000 mPa·s,更佳為10 mPa·s~20,000 mPa·s,尤佳為100 mPa·s~15,000 mPa·s。 作為具有此種特性的氟系液體狀化合物,較佳為不具有反應性基的非熱硬化性化合物。此處所述的反應性基是指藉由250℃的加熱而反應的基的全體,可列舉聚合性基、水解性基等。具體而言,例如可列舉:(甲基)丙烯酸基、環氧基、異氰酸基等。 另外,氟系液體狀化合物自25℃以20℃/min昇溫的10%熱質量減少溫度較佳為250℃以上,更佳為280℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的接著層。再者,所謂熱質量減少溫度,是指利用熱重量測定裝置(TGA)於氮氣流下以所述昇溫條件進行測定而得的值。The fluorine-based liquid compound is preferably a compound that does not change when the substrate for temporary bonding is processed. For example, it is preferably a compound that can exist in a liquid state even after heating at 250° C. or higher or processing the substrate with various chemical liquids. As a specific example, it is preferable to heat from a state of 25°C to 250°C at a temperature increase of 10°C/min, and then cool to 25°C. The viscosity at 25°C is 1 mPa·s to 100,000 mPa·s. It is more preferably 10 mPa·s to 20,000 mPa·s, and particularly preferably 100 mPa·s to 15,000 mPa·s. As the fluorine-based liquid compound having such characteristics, a non-thermosetting compound having no reactive group is preferred. The reactive group mentioned here refers to the entire group that reacts by heating at 250°C, and includes a polymerizable group, a hydrolyzable group, and the like. Specifically, for example, a (meth)acrylic group, an epoxy group, an isocyanate group, etc. may be mentioned. In addition, the 10% thermal mass reduction temperature of the fluorine-based liquid compound raised from 25°C at 20°C/min is preferably 250°C or higher, more preferably 280°C or higher. In addition, the upper limit is not particularly limited. For example, it is preferably 1000°C or lower, and more preferably 800°C or lower. According to this aspect, it is easy to form an adhesive layer excellent in heat resistance. In addition, the thermal mass reduction temperature refers to a value measured by a thermogravimetry device (TGA) under a nitrogen stream under the above-mentioned temperature increase condition.

氟系液體狀化合物較佳為含有親油基。作為親油基,可列舉直鏈或分支的烷基、環烷基、芳香族基等。The fluorine-based liquid compound preferably contains a lipophilic group. Examples of the lipophilic group include linear or branched alkyl groups, cycloalkyl groups, aromatic groups, and the like.

烷基的碳數較佳為2~30,更佳為4~30,進而更佳為6~30,特佳為12~30。作為烷基的具體例,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基、十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、2-乙基己基。 烷基可具有取代基。作為取代基,可列舉:鹵素原子、烷氧基、芳香族基等。 作為鹵素原子,可列舉氯原子、氟原子、溴原子、碘原子等,較佳為氟原子。 烷氧基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷氧基較佳為直鏈烷氧基或分支烷氧基。 芳香族基可為單環,亦可為多環。芳香族基的碳數較佳為6~20,更佳為6~14,最佳為6~10。The number of carbon atoms in the alkyl group is preferably 2-30, more preferably 4-30, still more preferably 6-30, and particularly preferably 12-30. Specific examples of the alkyl group include, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, Octadecyl, isopropyl, isobutyl, second butyl, tertiary butyl, 1-ethylpentyl, 2-ethylhexyl. The alkyl group may have a substituent. As a substituent, a halogen atom, an alkoxy group, an aromatic group, etc. are mentioned. As a halogen atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, etc. are mentioned, A fluorine atom is preferable. The carbon number of the alkoxy group is preferably 1-30, more preferably 1-20, and still more preferably 1-10. The alkoxy group is preferably a linear alkoxy group or a branched alkoxy group. The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6-20, more preferably 6-14, most preferably 6-10.

環烷基可為單環,亦可為多環。環烷基的碳數較佳為3~30,更佳為4~30,進而更佳為6~30,最佳為6~20。作為單環的環烷基,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環的環烷基,例如可列舉:金剛烷基、降冰片基、冰片基、莰烯基、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基及蒎烯基。 環烷基可具有所述取代基。Cycloalkyl groups may be monocyclic or polycyclic. The carbon number of the cycloalkyl group is preferably 3-30, more preferably 4-30, still more preferably 6-30, most preferably 6-20. Examples of monocyclic cycloalkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl. As the polycyclic cycloalkyl group, for example, adamantyl group, norbornyl group, bornyl group, camphenyl group, decahydronaphthyl group, tricyclodecyl group, tetracyclodecyl group, camphenyl group, two Cyclohexyl and pinenyl. Cycloalkyl groups may have such substituents.

芳香族基可為單環,亦可為多環。芳香族基的碳數較佳為6~20,更佳為6~14,最佳為6~10。芳香族基較佳為於構成環的元素中不含雜原子(例如氮原子、氧原子、硫原子等)。作為芳香族基的具體例,可列舉:苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、苯并二茚環、苝環、稠五苯環、苊環、菲環、蒽環、稠四苯環、

Figure 02_image001
環、聯伸三苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并哌喃環、氧雜蒽環、啡噁噻環、啡噻嗪環及啡嗪環。 芳香族基可具有所述取代基。The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6-20, more preferably 6-14, most preferably 6-10. The aromatic group preferably does not contain heteroatoms (for example, nitrogen atoms, oxygen atoms, sulfur atoms, etc.) in the elements constituting the ring. Specific examples of aromatic groups include benzene ring, naphthalene ring, pentylene ring, indene ring, azulene ring, heptene ring, benzobiindene ring, perylene ring, fused pentabenzene ring, acenaphthene ring, Phenanthrene ring, anthracene ring, fused tetraphenyl ring,
Figure 02_image001
Ring, biphenyl ring, pyrrole ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indoleazine Ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinazine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinazoline ring, isoquine The phenanthrene ring, the carbazole ring, the phenanthridine ring, the acridine ring, the phenanthroline ring, the thianthrone ring, the benzopyran ring, the xanthene ring, the phenoxathi ring, the phenanthrazine ring, and the phenanthrazine ring. The aromatic group may have such a substituent.

氟系液體狀化合物可為僅含有一種親油基的化合物,亦可含有兩種以上。另外,親油基亦可含有氟原子。即,本發明中的氟系液體狀化合物可為僅親油基含有氟原子的化合物。另外,亦可為除了親油基以外進而含有具有氟元素的基(亦稱為氟基)的化合物。較佳為含有親油基與氟基的化合物。於氟系液體狀化合物為含有親油基與氟基的化合物的情況下,親油基可含有氟原子,亦可不含氟原子,較佳為親油基不含氟原子。 氟系液體狀化合物於一分子中具有一個以上的親油基,較佳為具有2個~100個,特佳為具有6個~80個。The fluorine-based liquid compound may be a compound containing only one kind of lipophilic group, or may contain two or more kinds. In addition, the lipophilic group may contain a fluorine atom. That is, the fluorine-based liquid compound in the present invention may be a compound in which only the lipophilic group contains a fluorine atom. In addition, it may also be a compound containing a group having a fluorine element (also referred to as a fluorine group) in addition to the lipophilic group. Preferably, it is a compound containing a lipophilic group and a fluorine group. When the fluorine-based liquid compound is a compound containing a lipophilic group and a fluorine group, the lipophilic group may or may not contain a fluorine atom. Preferably, the lipophilic group does not contain a fluorine atom. The fluorine-based liquid compound has one or more lipophilic groups in one molecule, preferably 2 to 100, and particularly preferably 6 to 80.

作為氟基,可使用已知的氟基。例如,可列舉含氟烷基、含氟伸烷基等。再者,氟基中作為親油基而發揮功能者包含於親油基中。 含氟烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~15。含氟烷基可為直鏈、分支、環狀的任一種。另外,亦可具有醚鍵。另外,含氟烷基亦可為氫原子的全部被取代為氟原子的全氟烷基。 含氟伸烷基的碳數較佳為2~30,更佳為2~20,進而更佳為2~15。含氟伸烷基可為直鏈、分支、環狀的任一種。另外,亦可具有醚鍵。另外,含氟伸烷基亦可為氫原子的全部被取代為氟原子的全氟伸烷基。As the fluorine group, a known fluorine group can be used. For example, a fluorine-containing alkyl group, a fluorine-containing alkylene group, etc. can be mentioned. In addition, the fluorine group that functions as a lipophilic group is included in the lipophilic group. The carbon number of the fluoroalkyl group is preferably 1-30, more preferably 1-20, and still more preferably 1-15. The fluorine-containing alkyl group may be linear, branched, or cyclic. In addition, it may have an ether bond. In addition, the fluorine-containing alkyl group may be a perfluoroalkyl group in which all of the hydrogen atoms are substituted with fluorine atoms. The carbon number of the fluorine-containing alkylene group is preferably 2-30, more preferably 2-20, and still more preferably 2-15. The fluorine-containing alkylene group may be linear, branched, or cyclic. In addition, it may have an ether bond. In addition, the fluorine-containing alkylene group may be a perfluoroalkylene group in which all of the hydrogen atoms are substituted with fluorine atoms.

氟系液體狀化合物較佳為氟原子的含有率為1質量%~90質量%,更佳為2質量%~80質量%,進而更佳為5質量%~70質量%。若氟含有率為所述範圍,則剝離性優異。 氟原子的含有率由「{(一分子中的氟原子數´氟原子的質量)/一分子中的所有原子的質量}´100」來定義。The fluorine-based liquid compound preferably has a fluorine atom content of 1% by mass to 90% by mass, more preferably 2% by mass to 80% by mass, and still more preferably 5% by mass to 70% by mass. If the fluorine content is in the above range, the releasability is excellent. The content of fluorine atoms is defined by "{(number of fluorine atoms in a molecule ´ mass of fluorine atoms)/mass of all atoms in a molecule}´ 100".

氟系液體狀化合物亦可使用市售品。例如可較佳地列舉:迪愛生(DIC)公司製造的美佳法(Megafac)系列的F-251、F-281、F-477、F-553、F-554、F-555、F-556、F-557、F-558、F-559、F-560、F-561、F-563、F-565、F-567、F-568、F-571、R-40、R-41、R-43、R-94;或尼歐斯(NEOS)公司製造的福傑特(Ftergent)系列的710F、710FM、710FS、730FL、730LM。Commercial products can also be used for the fluorine-based liquid compound. For example, it may be better to cite: F-251, F-281, F-477, F-553, F-554, F-555, F-556, F-251, F-281, F-477, F-553, F-554, F-555, F-556, F-251, F-281, F-477, F-553, F-554, F-555, F-556, and F-557, F-558, F-559, F-560, F-561, F-563, F-565, F-567, F-568, F-571, R-40, R-41, R- 43. R-94; or 710F, 710FM, 710FS, 730FL, 730LM of the Ftergent series manufactured by NEOS.

於在本發明的暫時接著劑中使用氟系液體狀化合物的情況下,其含量相對於除了溶劑以外的暫時接著劑的質量而較佳為0.01質量%~10質量%,更佳為0.02質量%~5質量%。下限較佳為0.03質量%以上。上限較佳為1質量%以下,更佳為小於0.5質量%。若氟系液體狀化合物的含量為所述範圍,則接著性及剝離性優異。氟系液體狀化合物可為單獨一種,亦可併用兩種以上。於併用兩種以上的情況下,較佳為合計含量為所述範圍。In the case of using a fluorine-based liquid compound in the temporary adhesive of the present invention, its content is preferably 0.01% by mass to 10% by mass, more preferably 0.02% by mass relative to the mass of the temporary adhesive excluding the solvent ~5% by mass. The lower limit is preferably 0.03% by mass or more. The upper limit is preferably 1% by mass or less, and more preferably less than 0.5% by mass. When the content of the fluorine-based liquid compound is within the above range, the adhesiveness and releasability are excellent. The fluorine-based liquid compound may be used alone or in combination of two or more. When two or more types are used in combination, it is preferable that the total content is in the above-mentioned range.

<<其他成分>> 在不損及本發明的效果的範圍內,本發明的暫時接著劑視需要可調配各種添加物,例如塑化劑、硬化劑、觸媒、填充劑、密接促進劑、紫外線吸收劑、抗凝聚劑、彈性體或其他高分子化合物等。於調配該些添加劑的情況下,其調配量分別較佳為暫時接著劑的總固體成分的3質量%以下,更佳為1質量%以下。調配時的下限值分別較佳為0.0001質量%以上。另外,該些添加劑的合計調配量較佳為暫時接著劑的總固體成分的10質量%以下,更佳為3質量%以下。調配該些成分時的合計調配量的下限值較佳為0.0001質量%以上。<<Other components>> In the range that does not impair the effect of the invention, the temporary adhesive of the invention can be blended with various additives as necessary, such as plasticizers, hardeners, catalysts, fillers, adhesion promoters, UV absorbers, anti-agglomeration agents, elastomers or other polymer compounds, etc. In the case of blending these additives, the blending amounts are preferably 3% by mass or less of the total solid content of the temporary adhesive, and more preferably 1% by mass or less. The lower limit at the time of blending is preferably 0.0001% by mass or more. In addition, the total blending amount of these additives is preferably 10% by mass or less of the total solid content of the temporary adhesive, and more preferably 3% by mass or less. The lower limit of the total blending amount when blending these components is preferably 0.0001% by mass or more.

本發明的暫時接著劑較佳為不含金屬等雜質。作為接著劑中所含的雜質的含量,較佳為1 ppm以下,更佳為1 ppb以下,進而更佳為100 ppt以下,尤佳為10 ppt以下,特佳為實質上不含(測定裝置的檢測界限以下)。 作為將金屬等雜質自暫時接著劑去除的方法,例如可列舉使用過濾器的過濾。作為過濾器孔徑,較佳為細孔徑10 nm以下,更佳為5 nm以下,進而更佳為3 nm以下。關於過濾器的材質,較佳為聚四氟乙烯製、聚乙烯製、尼龍製的過濾器。過濾器可使用利用有機溶劑預先清洗者。過濾器過濾步驟中,可將多種過濾器串聯或並聯連接而使用。於使用多種過濾器的情況下,可組合使用孔徑及/或材質不同的過濾器。另外,亦可將接著劑多次過濾,多次過濾的步驟亦可為循環過濾步驟。 另外,作為減少暫時接著劑中所含的金屬等雜質的方法,可列舉如下等方法:選擇金屬含量少的原料作為構成暫時接著劑的原料;對構成暫時接著劑的原料進行過濾器過濾;於利用聚四氟乙烯等於裝置內形成內襯而盡可能地抑制污染(contamination)的條件下進行蒸餾。對構成暫時接著劑的原料進行的過濾器過濾中的較佳條件與所述條件相同。 除了過濾器過濾以外,可使用吸附材料進行雜質的去除,亦可組合使用過濾器過濾與吸附材料。作為吸附材料,可使用公知的吸附材料,例如可使用矽膠、沸石等無機系吸附材料、活性碳等有機系吸附材料。The temporary adhesive of the present invention preferably does not contain impurities such as metals. The content of impurities contained in the adhesive is preferably 1 ppm or less, more preferably 1 ppb or less, still more preferably 100 ppt or less, particularly preferably 10 ppt or less, particularly preferably substantially free of (measurement device Below the detection limit). As a method of removing impurities such as metals from the temporary adhesive, for example, filtration using a filter can be cited. The pore size of the filter is preferably 10 nm or less, more preferably 5 nm or less, and still more preferably 3 nm or less. Regarding the material of the filter, a filter made of polytetrafluoroethylene, polyethylene, or nylon is preferable. The filter can be cleaned in advance with an organic solvent. In the filter filtration step, multiple filters can be connected in series or in parallel for use. When multiple filters are used, filters with different pore sizes and/or materials can be used in combination. In addition, the adhesive may be filtered multiple times, and the step of multiple filtering may also be a cyclic filtering step. In addition, as a method of reducing impurities such as metals contained in the temporary adhesive, methods such as the following: selecting a raw material with a low metal content as the raw material constituting the temporary adhesive; filtering the raw material constituting the temporary adhesive; The use of polytetrafluoroethylene is equivalent to the formation of a lining in the device and the distillation is carried out under the condition of suppressing contamination as much as possible. The preferable conditions in the filter filtration of the raw material constituting the temporary adhesive are the same as the above-mentioned conditions. In addition to filter filtration, adsorption materials can be used to remove impurities, and filter filtration and adsorption materials can also be used in combination. As the adsorbent, well-known adsorbents can be used. For example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon can be used.

<暫時接著劑的製備> 本發明的暫時接著劑可將所述各成分加以混合而製備。各成分的混合通常於0℃~100℃的範圍內進行。另外,於將各成分加以混合後,例如較佳為利用過濾器進行過濾。過濾可以多階段進行,亦可反覆進行多次。另外,亦可對經過濾的液體進行再過濾。 作為過濾器,若為自先前以來用於過濾用途等的過濾器,則可無特別限定地使用。例如可列舉使用聚四氟乙烯(Polytetrafluoroethylene,PTFE)等氟樹脂、尼龍-6、尼龍-6,6等聚醯胺系樹脂、聚乙烯、聚丙烯(Polypropylene,PP)等聚烯烴樹脂(包含高密度、超高分子量的聚烯烴樹脂)等原材料的過濾器。該些原材料之中,較佳為聚丙烯(含有高密度聚丙烯)及尼龍。 過濾器的孔徑例如適合的是0.003 μm~5.0 μm左右。藉由設為該範圍,可抑制過濾堵塞,並且可確實地去除組成物中所含的雜質或凝聚物等微細的異物。 當使用過濾器時,可組合不同的過濾器。此時,利用第一過濾器的過濾可僅為一次,亦可進行兩次以上。於組合不同的過濾器而進行兩次以上的過濾的情況下,較佳為第二次以後的孔徑與第一次的過濾的孔徑相同,或比第一次的過濾的孔徑小。另外,亦可於所述範圍內組合不同孔徑的第一過濾器。此處的孔徑可參照過濾器廠商的標稱值。作為市售的過濾器,例如可自日本頗爾(PALL)股份有限公司、愛多邦得科(Advantec)東洋股份有限公司、日本英特格(Entegris)股份有限公司(原日本密科裏(Mykrolis)股份有限公司)或北澤微濾器(Kitz Microfilter)股份有限公司等所提供的各種過濾器中選擇。<Preparation of Temporary Adhesive> The temporary adhesive of the present invention can be prepared by mixing the above-mentioned components. The mixing of each component is usually performed in the range of 0°C to 100°C. Moreover, after mixing each component, it is preferable to filter with a filter, for example. Filtration can be carried out in multiple stages, or iteratively many times. In addition, the filtered liquid can also be refiltered. As a filter, if it is a filter which has been used for filtration purposes etc., it can use without a restriction|limiting in particular. Examples include the use of fluororesins such as polytetrafluoroethylene (PTFE), polyamide resins such as nylon-6, nylon-6, and 6, and polyolefin resins such as polyethylene and polypropylene (Polypropylene, PP) (including high Density, ultra-high molecular weight polyolefin resin) and other raw materials filters. Among these raw materials, polypropylene (including high-density polypropylene) and nylon are preferred. The pore diameter of the filter is suitably about 0.003 μm to 5.0 μm, for example. By setting it in this range, filter clogging can be suppressed, and fine foreign substances such as impurities and aggregates contained in the composition can be reliably removed. When using filters, different filters can be combined. At this time, the filtration by the first filter may be performed only once, or may be performed more than twice. When performing filtration two or more times in combination with different filters, it is preferable that the pore size after the second filtration is the same as the pore size of the first filtration or smaller than the pore size of the first filtration. In addition, it is also possible to combine first filters with different pore diameters within the above range. The pore size here can refer to the nominal value of the filter manufacturer. As commercially available filters, for example, available from Japan PALL Co., Ltd., Advantec Toyo Co., Ltd., Japan Entegris Co., Ltd. (formerly Japan Micori ( Choose from various filters provided by Mykrolis Co., Ltd. or Kitz Microfilter Co., Ltd. etc.

<暫時接著劑的用途> 本發明的暫時接著劑可形成接著性及剝離性優異的接著層。因此,當例如對元件晶圓實施機械性或化學性處理時,可使元件晶圓與支持體穩定地進行暫時接著且可容易解除對元件晶圓的暫時接著。本發明的暫時接著劑可較佳地用作半導體裝置製造用暫時接著劑。<Use of Temporary Adhesive> The temporary adhesive of the present invention can form an adhesive layer excellent in adhesiveness and releasability. Therefore, when mechanical or chemical processing is performed on the element wafer, for example, the element wafer and the support can be temporarily bonded stably, and the temporary bonding of the element wafer can be easily released. The temporary adhesive of the present invention can be preferably used as a temporary adhesive for semiconductor device manufacturing.

<接著膜> 其次,對本發明的接著膜進行說明。 本發明的接著膜具有包含本發明的暫時接著劑的接著層。 於本發明的接著膜中,矽系液體狀化合物偏向存在於接著層的表層。因此,剝離性優異。另外,接著層包含彈性體,因此亦可追隨支持體或基材的微細凹凸,並利用適度的錨固效果而獲得優異的接著性。因此,可兼具接著性與剝離性。 於本發明的接著膜的接著層中,較佳為矽系液體狀化合物的濃度在自接著層的任一表面起,接著層的厚度的5%的範圍的區域、與在厚度方向超過5%且50%以下的範圍的區域不同。 接著層中的矽系液體狀化合物的濃度例如可藉由如下方法進行測定:一邊進行蝕刻一邊進行X射線光電子分光(Electron Spectroscopy for Chemical Analysis,ESCA)測定的方法;或者將斜刃切削與飛行時間型二次離子質量分析(Time of Flight-Secondary Ion Mass Spectroscopy,TOF-SIMS)測定組合的方法。<Adhesive Film> Next, the adhesive film of the present invention will be described. The adhesive film of the present invention has an adhesive layer containing the temporary adhesive of the present invention. In the adhesive film of the present invention, the silicon-based liquid compound is eccentrically present on the surface layer of the adhesive layer. Therefore, the peelability is excellent. In addition, the adhesive layer contains an elastomer, so it can follow the fine irregularities of the support or the base material, and use a moderate anchoring effect to obtain excellent adhesion. Therefore, it can have both adhesiveness and peelability. In the adhesive layer of the adhesive film of the present invention, it is preferable that the concentration of the silicon-based liquid compound is in the range of 5% of the thickness of the adhesive layer from any surface of the adhesive layer, and more than 5% in the thickness direction. And the area of the range of 50% or less is different. The concentration of the silicon-based liquid compound in the subsequent layer can be measured, for example, by the following method: the method of X-ray photoelectron spectroscopy (Electron Spectroscopy for Chemical Analysis, ESCA) measurement while etching; or the bevel cutting and flight time Type of secondary ion mass analysis (Time of Flight-Secondary Ion Mass Spectroscopy, TOF-SIMS) determination method.

本發明的接著膜的溶劑含有率較佳為1質量%以下,更佳為0.1質量以下,特佳為不含。再者,接著膜的溶劑含有率可藉由氣相層析(gas chromatography)法進行測定。The solvent content of the adhesive film of the present invention is preferably 1% by mass or less, more preferably 0.1% by mass or less, and particularly preferably not containing. Furthermore, the solvent content of the adhesive film can be measured by gas chromatography.

於本發明的接著膜中,接著層的平均厚度並無特別限定,例如較佳為0.1 μm~500 μm,更佳為0.1 μm~200 μm,進而更佳為10 μm~200 μm,特佳為50 μm~200 μm。若接著層的平均厚度為所述範圍,則容易製成平坦性優異的接著膜。於本發明中,接著層的平均厚度定義為藉由橢圓偏光法(ellipsometry)對5點進行測定而得的每點的平均值。In the adhesive film of the present invention, the average thickness of the adhesive layer is not particularly limited. For example, it is preferably 0.1 μm to 500 μm, more preferably 0.1 μm to 200 μm, still more preferably 10 μm to 200 μm, and particularly preferably 50 μm~200 μm. If the average thickness of the adhesive layer is in the above range, it is easy to form an adhesive film excellent in flatness. In the present invention, the average thickness of the adhesive layer is defined as the average value of each point obtained by measuring 5 points by ellipsometry.

本發明的接著膜可為接著層單層,亦可於接著層的單面或兩面具有其他層。作為其他層,可例示脫模層。 脫模層的平均厚度較佳為0.001 μm~1 μm,更佳為0.01 μm~0.5 μm。若為所述範圍,則接著膜具有適度的接著力,與基材或支持體的接著性良好,且可容易將接著膜自基材或支持體剝離。再者,於本發明中,脫模層的平均厚度定義為藉由橢圓偏光法對5點進行測定而得的每點的平均值。脫模層較佳為包含含有氟原子的化合物。脫模層的詳細情況可參考日本專利特開2014-066385號公報的段落0068~段落0145的記載,該些內容被併入至本說明書中。 另外,本發明的接著膜亦可設為不含脫模層的構成。其原因在於包含本發明的暫時接著劑的接著層自身具有剝離性。The adhesive film of the present invention may be a single adhesive layer, or may have other layers on one or both sides of the adhesive layer. As the other layer, a release layer can be exemplified. The average thickness of the release layer is preferably 0.001 μm to 1 μm, more preferably 0.01 μm to 0.5 μm. If it is the said range, the adhesive film has moderate adhesive force, the adhesiveness with a base material or a support body is good, and the adhesive film can be peeled easily from a base material or a support body. In addition, in the present invention, the average thickness of the release layer is defined as the average value per point measured by the ellipsometry at 5 points. The release layer preferably contains a compound containing fluorine atoms. For the details of the release layer, reference can be made to the description of paragraph 0068 to paragraph 0145 of JP 2014-066385 A, and these contents are incorporated into this specification. Moreover, the adhesive film of this invention may be set as the structure which does not contain a mold release layer. The reason is that the adhesive layer itself containing the temporary adhesive agent of the present invention has peelability.

本發明的接著膜亦可將脫模膜貼合於接著層的單面或兩面而製成「帶脫模膜的接著膜」,根據該態樣,可防止當將長條狀的接著膜捲取成輥狀時,於接著層的表面產生傷痕、於保管中發生黏貼的問題。 可於使用時將脫模膜剝離去除。例如,於將脫模膜貼合於兩面的情況下,將單面的脫模膜剝下,並將接著面層壓於基材或支持體等,之後將所殘留的脫模膜剝下,藉此可盡可能地保持片材面的潔淨。The adhesive film of the present invention can also be made into an "adhesive film with a release film" by bonding the release film on one or both sides of the adhesive layer. According to this aspect, it is possible to prevent the long adhesive film from being rolled up. When it is taken into a roll shape, scratches are generated on the surface of the adhesive layer, and sticking problems occur during storage. The release film can be peeled off during use. For example, in the case of bonding the release film on both sides, peel off the one-sided release film, laminate the adhesive surface on a substrate or support, etc., and then peel off the remaining release film, This can keep the sheet surface as clean as possible.

<接著膜的製造方法> 本發明的接著膜可藉由先前公知的方法而製造。例如可藉由熔融製膜法、溶液製膜法等而製造。 熔融製膜法是藉由對原料組成物進行加熱而使其熔融來實現流動性,使用擠出成型裝置或射出成型裝置將該溶液製成片材狀,進行冷卻而獲得膜(片材)的方法。 擠出成型法中,可獲得輥狀的長條膜。射出成型法中,難以獲得長條膜,但獲得高的膜厚精度。亦可藉由混合、溶融、攪拌而添加其他添加劑。可將脫模膜貼合於該膜的單面或兩面而製成「帶脫模膜的接著膜」。 溶液製膜法是藉由利用溶劑溶解原料組成物而實現流動性,將該溶液塗敷於膜或鼓或帶等支持體而製成片材狀,進行乾燥而獲得膜(片材)的方法。塗敷可列舉:藉由壓力自狹縫狀的開口擠出溶液而進行塗敷的方法、藉由凹版或網紋輥轉印溶液而進行塗敷的方法、一面自噴霧器或分配器噴出溶液一面進行掃描塗敷的方法、使溶液貯存於貯槽中而於其中通過膜或鼓或帶而進行浸漬塗敷的方法、一面藉由線棒壓流溶液一面進行描繪而進行塗敷的方法等。亦可藉由使用進行溶解、混合、攪拌的溶液而添加其他添加劑。於在支持體上塗敷溶液後,進行乾燥而成為固體化的片材,之後將片材自支持體機械性地剝下,藉此可獲得單一的膜(片材)。作為為了容易剝下而預先對支持體上賦予脫模性的處理,可進行脫模層的塗佈、浸漬處理、氣體處理、電磁波照射處理、電漿照射處理等。或者還可並不將膜自支持體剝下而殘留,於膜支持體上接著有片材的狀態下製成「帶脫模膜的接著膜」。藉由連續地進行該些處理,可獲得輥狀的長條膜。而且,亦可於接著膜的兩面貼合脫模膜,製成「兩面帶脫模膜的片材」。<The manufacturing method of an adhesive film> The adhesive film of this invention can be manufactured by a conventionally well-known method. For example, it can be produced by a melt film forming method, a solution film forming method, or the like. The melt film forming method is to heat and melt the raw material composition to achieve fluidity, use an extrusion molding device or an injection molding device to form the solution into a sheet, and then cool it to obtain a film (sheet) method. In the extrusion molding method, a roll-shaped long film can be obtained. In the injection molding method, it is difficult to obtain a long film, but a high film thickness accuracy is obtained. Other additives can also be added by mixing, melting, and stirring. The release film can be attached to one or both sides of the film to make an "adhesive film with a release film". The solution film forming method is a method of dissolving the raw material composition in a solvent to achieve fluidity, applying the solution to a support such as a membrane, drum or belt, and forming a sheet, and drying to obtain a film (sheet) . Examples of coating include: a method of applying pressure by squeezing the solution from a slit-shaped opening, a method of applying the solution by transferring the solution with a gravure or anilox roll, and spraying the solution from a sprayer or a dispenser. A method of scanning coating, a method of storing the solution in a storage tank and passing it through a film, drum, or belt, and a method of applying dip coating, a method of coating while drawing the solution while squeezing the solution with a wire rod. Other additives can also be added by using a solution that is dissolved, mixed, and stirred. After the solution is applied to the support, it is dried to become a solidified sheet, and then the sheet is mechanically peeled off from the support, thereby obtaining a single film (sheet). As a treatment for imparting releasability to the support in advance for easy peeling, coating of a release layer, immersion treatment, gas treatment, electromagnetic wave irradiation treatment, plasma irradiation treatment, etc. can be performed. Or it is also possible to make the "adhesive film with a release film" in the state where the film is adhered to the film support without peeling off the film from the support and leaving it. By continuously performing these treatments, a roll-shaped long film can be obtained. In addition, a release film can be attached to both sides of the adhesive film to form a "sheet with a release film on both sides".

<接著性支持體> 其次,對本發明的接著性支持體進行說明。 本發明的接著性支持體具有支持體、及包含本發明的暫時接著劑的接著層。接著層較佳為包含所述彈性體X與彈性體Y作為彈性體。 接著層的平均厚度因用途而不同,例如較佳為0.1 μm~500 μm。 接著層可藉由使用旋轉塗佈法、噴霧法、輥塗佈法、流塗法、刮刀塗佈法、浸漬法等將本發明的暫時接著劑塗佈於支持體表面,進行乾燥(烘烤)而形成。乾燥例如是於60℃~150℃下進行10秒~2分鐘。該情況下的接著層的平均厚度並無特別限定,例如較佳為1 μm~100 μm,更佳為1 μm~10 μm。 另外,接著層亦可於支持體上層壓所述本發明的接著膜而形成。使用接著膜來形成接著層,藉此亦可使用於溶劑中的溶解性差的彈性體等材料來形成接著層,因此容易形成耐熱性或耐化學品性優異的接著層。另外,可無厚度不均地平坦地製作10 μm以上的厚膜的接著層。該情況下的接著層的平均厚度並無特別限定,例如較佳為0.1 μm~200 μm,更佳為10 μm~200 μm,特佳為50 μm~200 μm。 為了使用接著膜而於支持體上形成接著層,例如可列舉將接著膜安放在真空層壓機上,藉由本裝置而使接著膜位於支持體上,在真空下使接著膜與支持體接觸,藉由輥等進行壓接而將接著膜固定(積層)於支持體上的方法等。另外,固定於支持體上的接著膜(接著層)例如可切為圓形狀等所期望的形狀。<Adhesive Support> Next, the adhesive support of the present invention will be described. The adhesive support of the present invention has a support and an adhesive layer containing the temporary adhesive of the present invention. The subsequent layer preferably includes the elastomer X and the elastomer Y as elastomers. The average thickness of the subsequent layer varies depending on the application, and for example, it is preferably 0.1 μm to 500 μm. The subsequent layer can be dried (baked) by applying the temporary adhesive of the present invention to the surface of the support by using a spin coating method, a spray method, a roll coating method, a flow coating method, a knife coating method, a dipping method, etc. ) And formed. Drying is performed, for example, at 60°C to 150°C for 10 seconds to 2 minutes. The average thickness of the adhesive layer in this case is not particularly limited. For example, it is preferably 1 μm to 100 μm, and more preferably 1 μm to 10 μm. In addition, the adhesive layer may be formed by laminating the adhesive film of the present invention on a support. The adhesive film is used to form the adhesive layer, and by this, it is also possible to form the adhesive layer using materials such as elastomers that have poor solubility in solvents. Therefore, it is easy to form an adhesive layer excellent in heat resistance or chemical resistance. In addition, an adhesive layer having a thick film of 10 μm or more can be formed flatly without thickness unevenness. The average thickness of the adhesive layer in this case is not particularly limited. For example, it is preferably 0.1 μm to 200 μm, more preferably 10 μm to 200 μm, and particularly preferably 50 μm to 200 μm. In order to use the adhesive film to form the adhesive layer on the support, for example, the adhesive film is placed on a vacuum laminator, the adhesive film is placed on the support by this device, and the adhesive film is brought into contact with the support under vacuum. A method of fixing (laminating) the adhesive film on the support by pressure bonding with a roller or the like. In addition, the adhesive film (adhesive layer) fixed to the support can be cut into a desired shape such as a circular shape, for example.

於本發明的接著性支持體中,接著層較佳為矽系液體狀化合物的濃度於自支持體的相反側的表面起在接著層的厚度方向為5%的範圍的區域比自支持體的相反側的表面起在接著層的厚度方向超過5%且50%以下的範圍的區域高。根據該態樣,當將接著性支持體暫時接著於元件晶圓等基材後,並自元件晶圓剝離時,剝離性提高。進而,可容易藉由機械剝離等方法將接著層自基材或元件晶圓等的表面去除。 矽系液體狀化合物的濃度較佳為自支持體的相反側的表面起在接著層的厚度方向為5%的範圍的區域比自支持體的相反側的表面起在接著層的厚度方向超過5%且50%以下的範圍的區域多10質量%以上,更佳為多30質量%以上。In the adhesive support of the present invention, the adhesive layer is preferably such that the concentration of the silicon-based liquid compound is greater than that of the self-supporting body. The surface on the opposite side is high in an area exceeding 5% and 50% or less in the thickness direction of the adhesive layer. According to this aspect, when the adhesive support is temporarily attached to a base material such as a device wafer and then peeled from the device wafer, the peelability is improved. Furthermore, the adhesive layer can be easily removed from the surface of the substrate or the device wafer by a method such as mechanical peeling. The concentration of the silicon-based liquid compound is preferably greater than 5% in the thickness direction of the adhesive layer from the surface on the opposite side of the support than in the thickness direction of the adhesive layer from the surface on the opposite side of the support. The area in the range of% and 50% or less is 10% by mass or more, and more preferably 30% by mass or more.

於本發明的接著性支持體中,支持體(亦稱為載體支持體)並無特別限定,例如可列舉:矽基板、玻璃基板、金屬基板、化合物半導體基板等。其中,若鑒於不易污染作為半導體裝置的基板而代表性使用的矽基板的方面或可使用於半導體裝置的製造步驟中廣泛使用的靜電吸盤的方面等,較佳為矽基板。 支持體的厚度並無特別限定,例如較佳為300 μm~100 mm,更佳為300 μm~10 mm。 支持體可為於其表面具有脫模層者。即,支持體可為於矽基板等基板的表面具有脫模層的帶脫模層的支持體。 作為脫模層,較佳為含有氟原子及/或矽原子的低表面能量層,較佳為含有具有氟原子及/或矽原子的材料。脫模層的氟含有率較佳為30質量%~80質量%,更佳為40質量%~76質量%,特佳為60質量%~75質量%。 作為脫模層的材料,可使用與可形成於所述接著膜的表層的脫模層相同的材料。In the adhesive support of the present invention, the support (also referred to as carrier support) is not particularly limited, and examples thereof include silicon substrates, glass substrates, metal substrates, and compound semiconductor substrates. Among them, a silicon substrate is preferable in view of the fact that it is difficult to contaminate a silicon substrate that is typically used as a substrate of a semiconductor device or that it can be used in an electrostatic chuck widely used in the manufacturing process of a semiconductor device. The thickness of the support is not particularly limited. For example, it is preferably 300 μm to 100 mm, and more preferably 300 μm to 10 mm. The support may have a release layer on its surface. That is, the support may be a support with a mold release layer having a mold release layer on the surface of a substrate such as a silicon substrate. The release layer is preferably a low surface energy layer containing fluorine atoms and/or silicon atoms, and preferably contains a material having fluorine atoms and/or silicon atoms. The fluorine content of the release layer is preferably 30% by mass to 80% by mass, more preferably 40% by mass to 76% by mass, and particularly preferably 60% by mass to 75% by mass. As the material of the release layer, the same material as the release layer that can be formed on the surface layer of the adhesive film can be used.

<積層體> 其次,對本發明的積層體進行說明。本發明的積層體具有支持體、包含本發明的暫時接著劑的接著層、及基材。 以下,根據圖1及圖2對本發明的積層體的較佳實施形態進行說明。當然本發明的積層體的實施形態並不限定於該些實施形態。再者,圖1及圖2中,1表示基材,2表示支持體,3、3A、3B分別表示接著層。<Laminate> Next, the laminate of the present invention will be described. The laminate of the present invention has a support, an adhesive layer containing the temporary adhesive of the present invention, and a substrate. Hereinafter, a preferred embodiment of the laminate of the present invention will be described based on FIGS. 1 and 2. Of course, the embodiment of the laminate of the present invention is not limited to these embodiments. In addition, in FIG. 1 and FIG. 2, 1 indicates a substrate, 2 indicates a support, and 3, 3A, and 3B indicate adhesive layers, respectively.

本發明的積層體的第一實施形態如圖1所示為接著層3位於支持體2的表面,基材1位於接著層3的與支持體為相反側的表面的態樣。如此,就可提高積層體形成的處理量(throughput)的方面而言,較佳為於基材與支持體之間具有接著層3,接著層3與基材及支持體接觸。即,於積層體中,可例示於基材與支持體之間不含所述脫模層而僅為接著層的態樣。 於第一實施形態中,支持體與包含本發明的暫時接著劑的接著層的剝離強度A、及包含本發明的暫時接著劑的接著層與基材的剝離強度B較佳為滿足以下的式(1)及式(2)。   A<B …式(1) B≦4 N/cm  …式(2)   藉由剝離強度A及剝離強度B滿足所述式(1)的關係,當自基材剝離支持體時,可自支持體與包含本發明的暫時接著劑的接著層的界面剝離。 而且,藉由剝離強度B滿足所述式(2)的關係,可容易以以膜狀的狀態將接著層自基材表面剝離。即,可藉由機械剝離將接著層簡單地剝離。 所述剝離強度B較佳為3 N/cm以下,更佳為2 N/cm以下。 再者,本發明中的剝離強度是對向90°方向拉起時所施加的強度進行測定而得的值。剝離強度A表示將基材固定,並以50 mm/min的速度將支持體的端部向90°方向拉起時所施加的力。剝離強度B表示將基材固定,並以50 mm/min的速度將膜狀的接著層向90°方向拉起時所施加的力。In the first embodiment of the laminate of the present invention, as shown in FIG. 1, the adhesive layer 3 is located on the surface of the support 2 and the base material 1 is located on the surface of the adhesive layer 3 on the opposite side of the support. In this way, in terms of increasing the throughput of the laminate formation, it is preferable to have the adhesive layer 3 between the substrate and the support, and the adhesive layer 3 is in contact with the substrate and the support. That is, in the layered body, it is possible to exemplify an aspect in which the release layer is not included between the base material and the support, but only the adhesive layer. In the first embodiment, the peel strength A between the support and the adhesive layer containing the temporary adhesive of the present invention, and the peel strength B between the adhesive layer and the substrate containing the temporary adhesive of the present invention preferably satisfy the following formula (1) and formula (2). A<B …Formula (1) B≦4 N/cm …Formula (2) With the peel strength A and peel strength B satisfying the relationship of the formula (1), when the support is peeled from the substrate, it can be self-supporting The interface between the body and the adhesive layer containing the temporary adhesive of the present invention is peeled off. Furthermore, since the peel strength B satisfies the relationship of the above-mentioned formula (2), the adhesive layer can be easily peeled from the surface of the base material in a film-like state. That is, the adhesive layer can be easily peeled off by mechanical peeling. The peel strength B is preferably 3 N/cm or less, more preferably 2 N/cm or less. In addition, the peeling strength in this invention is a value obtained by measuring the strength applied when pulling up in a 90 degree direction. The peel strength A represents the force applied when the substrate is fixed and the end of the support is pulled up in the 90° direction at a speed of 50 mm/min. The peel strength B represents the force applied when the substrate is fixed and the film-like adhesive layer is pulled up in the 90° direction at a speed of 50 mm/min.

關於本發明的積層體,當自基材剝離支持體時,較佳為自基材與接著層的界面剝離包含本發明的暫時接著劑的接著層,於基材與接著層的剝離面的面積的50%以上的範圍中附著有所述矽系液體狀化合物的殘渣,或者自支持體與接著層的界面剝離接著層,於支持體與接著層的剝離面的面積的50%以上的範圍中附著有所述矽系液體狀化合物的殘渣。另外,源自彈性體的殘渣較佳為並未附著於所述剝離面的面積的50%以上的範圍中,更佳為並未附著於99%以上的範圍中。 矽系液體狀化合物的殘渣、及源自彈性體的殘渣可藉由目視、光學顯微鏡、掃描型電子顯微鏡、X射線光電子分光等而觀測,於本發明中,特別是設為藉由X射線光電子分光來測定剝離面。 再者,於本說明書中,「矽系液體狀化合物的殘渣」是接著層的矽系液體狀化合物成分,所謂「源自彈性體的殘渣」,是指接著層的彈性體成分。Regarding the laminate of the present invention, when the support is peeled from the base material, it is preferable to peel the adhesive layer containing the temporary adhesive of the present invention from the interface between the base material and the adhesive layer, in the area of the peeling surface between the base material and the adhesive layer The residue of the silicon-based liquid compound adheres to 50% or more of the range, or the adhesive layer is peeled from the interface between the support and the adhesive layer, in the range of 50% or more of the area of the peeling surface between the support and the adhesive layer The residue of the silicon-based liquid compound adheres. In addition, it is preferable that the residue derived from the elastomer does not adhere to the range of 50% or more of the area of the peeling surface, and it is more preferable that it does not adhere to the range of 99% or more. The residue of the silicon-based liquid compound and the residue derived from the elastomer can be observed by visual inspection, optical microscope, scanning electron microscope, X-ray photoelectron spectroscopy, etc. In the present invention, it is particularly set by X-ray photoelectron spectroscopy. Spectroscopically measure the peeled surface. In addition, in this specification, "the residue of the silicon-based liquid compound" refers to the silicon-based liquid compound component of the adhesive layer, and the "residue from the elastomer" refers to the elastomer component of the adhesive layer.

本發明的積層體可藉由對所述本發明的接著性支持體的形成有接著層側的面與基材進行加熱壓接來製造。加熱壓接條件例如較佳為溫度100℃~200℃、壓力0.01 MPa~1 MPa、時間1分鐘~15分鐘。The laminate of the present invention can be produced by heating and compressing the surface of the adhesive support of the present invention on the side on which the adhesive layer is formed and the base material. The heating and compression bonding conditions are preferably, for example, a temperature of 100°C to 200°C, a pressure of 0.01 MPa to 1 MPa, and a time of 1 minute to 15 minutes.

本發明的積層體的第二實施形態為圖2所示的態樣,並且為支持體2、接著層3A、及基材1以所述順序積層,且於支持體2與接著層3A之間具有與接著層3A的組成不同的第2接著層3B的態樣。於本實施形態中,基材1與接著層3A、接著層3A與第2接著層3B、第2接著層3B與支持體2較佳為在表面接觸。 如第二實施形態所示,藉由將接著層設為兩層以上,有容易將支持體與基材嵌入性良好(無空隙)地貼合的優點。特別是於支持體2側設置接著層3B,於基材1側設置第2接著層3A,將該些貼合,藉此可更有效地提高嵌入性。The second embodiment of the laminated body of the present invention is the aspect shown in FIG. 2, and the support 2, the adhesive layer 3A, and the base material 1 are laminated in the stated order, and are located between the support 2 and the adhesive layer 3A The second adhesive layer 3B has a composition different from that of the adhesive layer 3A. In this embodiment, the substrate 1 and the adhesive layer 3A, the adhesive layer 3A and the second adhesive layer 3B, and the second adhesive layer 3B and the support 2 are preferably in contact on the surface. As shown in the second embodiment, by making the adhesive layer into two or more layers, there is an advantage that it is easy to bond the support and the base material with good insertability (without voids). In particular, the adhesive layer 3B is provided on the side of the support 2 and the second adhesive layer 3A is provided on the side of the base material 1 and bonded together, whereby the embedding property can be more effectively improved.

本發明的積層體的第三實施形態為支持體2、接著層3A、及基材1以所述順序積層,且於接著層3A與基材之間具有與接著層的組成不同的第2接著層的態樣。於本實施形態中,支持體2與接著層3A、接著層3A與第2接著層3B、第2接著層3B與基材較佳為在表面接觸。In the third embodiment of the laminate of the present invention, the support 2, the adhesive layer 3A, and the base material 1 are laminated in the order described, and there is a second adhesive layer between the adhesive layer 3A and the base material that is different from the composition of the adhesive layer. The state of the layer. In this embodiment, the support 2 and the adhesive layer 3A, the adhesive layer 3A and the second adhesive layer 3B, and the second adhesive layer 3B and the base material are preferably in surface contact.

其次,對第二實施形態及第三實施形態中的第2接著層進行詳細說明。第2接著層3B只要為與包含本發明的暫時接著劑的接著層3A的組成不同的接著層,則並無特別規定。因此,第2接著層3B亦可為包含與本發明的暫時接著劑為相同構成成分的接著層。但是,該情況下,接著層3A與接著層3B彼此的組成不同。 於本發明中,第2接著層較佳為包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。藉由使用此種接著層,可進一步提高接著性。進而,第2接著層中的於25℃下為液體狀且含有矽原子的化合物的含量較佳為接著層中所含的於25℃下為液體狀且含有矽原子的化合物的含量的10質量%以下。藉由採用此種第2接著層,變得更容易調整剝離界面。 例如,於基材(元件晶圓)/第2接著層/包含本發明的暫時接著劑的接著層/支持體(載體)中,若將基材與第2接著層之間剝離所需的力比將包含本發明的暫時接著劑的接著層與支持體之間剝離所需的力大,則可使支持體與包含本發明的暫時接著劑的接著層之間剝離。藉由設為此種構成,剝離變得更容易。 另外,本發明中的第2接著層較佳為包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。藉由設為此種構成,可有效地抑制晶圓的翹曲。 第2接著層中的彈性體X及彈性體Y、以及其調配比例與本發明的暫時接著劑中所述者為相同含義,較佳範圍亦相同。另外,亦可於第2接著層中調配本發明的暫時接著劑中所述的各種添加劑等。Next, the second adhesive layer in the second embodiment and the third embodiment will be described in detail. The second adhesive layer 3B is not particularly defined as long as it is an adhesive layer having a composition different from that of the adhesive layer 3A containing the temporary adhesive of the present invention. Therefore, the second adhesive layer 3B may be an adhesive layer containing the same constituents as the temporary adhesive of the present invention. However, in this case, the composition of the adhesive layer 3A and the adhesive layer 3B are different from each other. In the present invention, the second adhesive layer preferably contains elastomer X containing styrene-derived repeating units in a ratio of 50% by mass or more and 95% by mass or less in all repeating units. By using such an adhesive layer, the adhesiveness can be further improved. Furthermore, the content of the compound that is liquid at 25°C and contains silicon atoms in the second adhesive layer is preferably 10 mass of the content of the compound that is liquid at 25°C and contains silicon atoms contained in the adhesive layer %the following. By using such a second adhesive layer, it becomes easier to adjust the peeling interface. For example, in the substrate (device wafer)/second adhesive layer/adhesive layer containing the temporary adhesive of the present invention/support (carrier), the force required to separate the substrate and the second adhesive layer If the force required to peel off the adhesive layer containing the temporary adhesive agent of the present invention and the support is greater, the support body and the adhesive layer containing the temporary adhesive agent of the present invention can be peeled off. With this configuration, peeling becomes easier. In addition, the second adhesive layer in the present invention preferably contains elastomer Y containing styrene-derived repeating units in a ratio of 10% by mass or more and less than 50% by mass in all repeating units. With such a configuration, the warpage of the wafer can be effectively suppressed. The elastomer X and the elastomer Y in the second adhesive layer and their blending ratio have the same meanings as those described in the temporary adhesive of the present invention, and the preferred ranges are also the same. In addition, various additives and the like described in the temporary adhesive of the present invention may be blended in the second adhesive layer.

本發明的積層體的第四實施形態為於第一實施形態~第三實施形態中具有其他層的態樣。作為其他層,可例示被稱為脫模層、剝離層或分離層的層。作為剝離層,例如可參考日本專利特開2014-212292號公報的段落0025~段落0055的記載,該些內容被併入至本說明書中。另外,作為分離層,可參考國際公開WO2013/065417號公報的段落0069~段落0124的記載,該些內容被併入至本說明書中。The fourth embodiment of the layered body of the present invention has other layers in the first to third embodiments. As the other layer, a layer called a release layer, a release layer, or a separation layer can be exemplified. As the peeling layer, for example, the description of paragraph 0025 to paragraph 0055 of JP 2014-212292 A can be referred to, and these contents are incorporated in this specification. In addition, as the separation layer, reference can be made to the description of paragraph 0069 to paragraph 0124 of International Publication WO2013/065417, and these contents are incorporated into this specification.

基材可較佳地使用元件晶圓。元件晶圓可不受限制地使用公知者,例如可列舉矽基板、化合物半導體基板等。作為化合物半導體基板的具體例,可列舉:SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板、GaN基板等。 元件晶圓的表面中,可形成有機械結構或電路。作為形成有機械結構或電路的元件晶圓,例如可列舉:微機電系統(Micro Electro Mechanical Systems,MEMS)、功率元件、影像感測器、微感測器、發光二極體(Light Emitting Diode,LED)、光學元件、插入器(Interposer)、嵌入型元件、微元件等。 元件晶圓較佳為具有金屬凸塊等結構。根據本發明,即便對在表面具有所述結構的元件晶圓,亦可穩定地進行暫時接著,並且可容易地解除與元件晶圓的暫時接著。結構的高度並無特別限定,例如較佳為1 μm~150 μm,更佳為5 μm~100 μm。 實施機械性或化學性處理前的元件晶圓的膜厚較佳為500 μm以上,更佳為600 μm以上,進而更佳為700 μm以上。上限例如較佳為2000 μm以下,更佳為1500 μm以下。 實施機械性或化學性處理而薄膜化後的元件晶圓的膜厚例如較佳為小於500 μm,更佳為400 μm以下,進而更佳為300 μm以下。下限例如較佳為1 μm以上,更佳為5 μm以上。The substrate can preferably be a device wafer. Known ones can be used for the device wafer without limitation, and examples thereof include silicon substrates, compound semiconductor substrates, and the like. Specific examples of compound semiconductor substrates include SiC substrates, SiGe substrates, ZnS substrates, ZnSe substrates, GaAs substrates, InP substrates, GaN substrates, and the like. On the surface of the device wafer, mechanical structures or circuits may be formed. Examples of device wafers on which mechanical structures or circuits are formed include: Micro Electro Mechanical Systems (MEMS), power devices, image sensors, micro sensors, and light emitting diodes (Light Emitting Diode, LED), optical components, interposer (Interposer), embedded components, micro components, etc. The device wafer preferably has a structure such as metal bumps. According to the present invention, even with the element wafer having the above-mentioned structure on the surface, the temporary bonding can be stably performed, and the temporary bonding with the element wafer can be easily released. The height of the structure is not particularly limited. For example, it is preferably 1 μm to 150 μm, and more preferably 5 μm to 100 μm. The film thickness of the device wafer before the mechanical or chemical treatment is preferably 500 μm or more, more preferably 600 μm or more, and still more preferably 700 μm or more. The upper limit is preferably 2000 μm or less, and more preferably 1500 μm or less, for example. The film thickness of the device wafer after being thinned by mechanical or chemical treatment is, for example, preferably less than 500 μm, more preferably 400 μm or less, and still more preferably 300 μm or less. The lower limit is, for example, preferably 1 μm or more, and more preferably 5 μm or more.

於本發明的積層體中,支持體(載體支持體)與所述接著性支持體中所說明的支持體為相同含義,較佳範圍亦相同。 另外,可於基材上設置接著層3A,於支持體上設置接著層3B並進行接著。該情況下,接著層3A與接著層3B可相同亦可不同。於不同的情況下,可藉由改變含有矽原子的化合物的種類、或者改變含有親油基及氟原子的化合物等其他添加劑的種類或添加量,而適當調整剝離選擇性(基材界面與支持體界面的剝離選擇性)或剝離力。 另外,亦可於支持體與基材之間配置所述本發明的接著片材,進行加熱壓接而製造。In the laminate of the present invention, the support (carrier support) has the same meaning as the support described in the adhesive support, and the preferred range is also the same. In addition, the adhesive layer 3A may be provided on the substrate, and the adhesive layer 3B may be provided on the support and then bonded. In this case, the adhesive layer 3A and the adhesive layer 3B may be the same or different. Under different circumstances, by changing the types of compounds containing silicon atoms, or changing the types or amounts of other additives such as compounds containing lipophilic groups and fluorine atoms, the peeling selectivity (substrate interface and support The peeling selectivity of the body interface) or peeling force. In addition, the adhesive sheet of the present invention may be arranged between the support and the base material, and heated and pressure-bonded to produce it.

另外,本發明的積層體亦可於支持體及基材的其中一者使用本發明的暫時接著劑來形成接著層,於支持體及基材的另一者使用本發明的暫時接著劑或所述其他的暫時接著劑來形成接著層,並將支持體及基材的形成有接著層的面彼此加熱壓接來製造。根據該方法,將接著層彼此貼合,因此可嵌入性良好地將支持體與基材貼合。In addition, the laminate of the present invention may also use the temporary adhesive of the present invention on one of the support and the substrate to form an adhesive layer, and use the temporary adhesive or the temporary adhesive of the present invention on the other of the support and the substrate. The other temporary adhesive is used to form the adhesive layer, and the support and the substrate on which the adhesive layer is formed are heated and pressure-bonded to each other. According to this method, since the adhesive layers are bonded to each other, the support and the base material can be bonded to each other with good insertability.

進而,另外,本發明的積層體亦可於支持體及基材的其中一者使用本發明的暫時接著劑與所述其他的暫時接著劑來形成分別包含一層以上接著層3A與接著層3B的接著層,於接著層上配置支持體及基材的另一者,並對支持體與基材進行加熱壓接來製造。Furthermore, the laminate of the present invention may also be formed of one or more adhesive layers 3A and 3B using the temporary adhesive of the present invention and the other temporary adhesive on one of the support and the base material. The adhesive layer is manufactured by disposing the other of the support and the substrate on the adhesive layer, and heat-pressing and bonding the support and the substrate.

<半導體裝置的製造方法> <<第一實施形態>> 以下,一倂參照圖3(A)~圖3(E),對經過製造積層體的步驟的半導體裝置的製造方法的一實施形態進行說明。再者,本發明並不限定於以下的實施形態。 圖3(A)~圖3(E)分別為對支持體與元件晶圓的暫時接著進行說明的概略剖面圖(圖3(A)、圖3(B)),表示暫時接著於支持體的元件晶圓經薄型化的狀態(圖3(C))、剝離了支持體與元件晶圓的狀態(圖3(D))、將接著層自元件晶圓去除後的狀態(圖3(E))的概略剖面圖。<Method of Manufacturing Semiconductor Device> <<First Embodiment>> Hereinafter, referring to FIGS. 3(A) to 3(E), one embodiment of a method of manufacturing a semiconductor device that has undergone the steps of manufacturing a laminate will be described. instruction. In addition, the present invention is not limited to the following embodiments. Figures 3(A) to 3(E) are schematic cross-sectional views (Figure 3(A) and Figure 3(B)) for explaining the temporary connection of the support and the device wafer, respectively, showing the temporary connection to the support The thinned element wafer state (Figure 3(C)), the state where the support and the element wafer are peeled off (Figure 3(D)), the state after the adhesive layer is removed from the element wafer (Figure 3(E) )) is a schematic cross-sectional view.

該實施形態中,如圖3(A)所示,首先準備於支持體12上設有接著層11而成的接著性支持體100。 接著層11較佳為實質上不含溶劑的態樣。 元件晶圓60(基材)是於矽基板61的表面61a上設置多個元件晶片62而成。 矽基板61的厚度例如較佳為200 μm~1200 μm。元件晶片62例如較佳為金屬結構體,高度較佳為10 μm~100 μm。 於形成接著層11的過程中,可設置利用溶劑對支持體12或元件晶圓60的背面等進行清洗的步驟。具體而言,藉由使用溶解接著層的溶劑將附著於支持體12或元件晶圓60的端面及背面的接著層的殘渣去除,而可防止裝置的污染,可降低薄型化元件晶圓的總厚度變異(Total Thickness Variation,TTV)。作為利用溶劑對支持體12或元件晶圓60的背面等進行清洗的步驟中所使用的溶劑,可使用所述暫時接著劑中所含的溶劑。In this embodiment, as shown in FIG. 3(A), first, an adhesive support 100 in which an adhesive layer 11 is provided on a support 12 is prepared. The subsequent layer 11 preferably does not contain a solvent substantially. The element wafer 60 (base material) is formed by arranging a plurality of element wafers 62 on the surface 61 a of the silicon substrate 61. The thickness of the silicon substrate 61 is preferably 200 μm to 1200 μm, for example. The element wafer 62 is preferably a metal structure, for example, and the height is preferably 10 μm-100 μm. In the process of forming the adhesive layer 11, a step of cleaning the back surface of the support 12 or the device wafer 60 with a solvent may be provided. Specifically, by using a solvent to dissolve the adhesive layer to remove residues of the adhesive layer attached to the support 12 or the end face and back surface of the device wafer 60, contamination of the device can be prevented, and the overall thinning of the device wafer can be reduced. Total Thickness Variation (TTV). As the solvent used in the step of cleaning the support 12 or the back surface of the element wafer 60 with a solvent, the solvent contained in the temporary adhesive can be used.

繼而,如圖3(B)所示,使接著性支持體100與元件晶圓60壓接,從而使支持體12與元件晶圓60暫時接著。 接著層11較佳為完全覆蓋元件晶片62,於元件晶片的高度為X μm、接著層的厚度為Y μm的情況下,較佳為滿足「X+100≧Y>X」的關係。 接著層11完全包覆元件晶片62的情況於欲進一步降低薄型元件晶圓的TTV(Total Thickness Variation)時(即於進一步提高薄型元件晶圓的平坦性時)有效。 即,於將元件晶圓薄型化時,藉由利用接著層11保護多個元件晶片62,而可於與支持體12的接觸面中大致消除凹凸形狀。因此,即便於如此得到支持的狀態下進行薄型化,亦減少源自多個元件晶片62的形狀被轉印於薄型元件晶圓的背面61b1之虞,其結果,可進一步降低最終所得的薄型元件晶圓的TTV。Then, as shown in FIG. 3(B), the adhesive support 100 and the element wafer 60 are pressure-bonded to temporarily bond the support 12 and the element wafer 60. The subsequent layer 11 preferably completely covers the element wafer 62, and when the height of the element wafer is X μm and the thickness of the adhesive layer is Y μm, the relationship of "X+100≧Y>X" is preferably satisfied. The case where the layer 11 completely covers the device wafer 62 is effective when the TTV (Total Thickness Variation) of the thin device wafer is to be further reduced (that is, when the flatness of the thin device wafer is further improved). That is, when the device wafer is thinned, by using the adhesive layer 11 to protect the plurality of device wafers 62, the uneven shape in the contact surface with the support 12 can be substantially eliminated. Therefore, even if thinning is carried out in such a supported state, the risk that the shape derived from the plurality of element wafers 62 is transferred to the back surface 61b1 of the thin element wafer is reduced. As a result, the resulting thin element can be further reduced. TTV of the wafer.

繼而,如圖3(C)所示,對矽基板61的背面61b實施機械性或化學性處理(並無特別限定,例如滑磨或化學機械研磨(Chemical Mechanical Polishing,CMP)等薄膜化處理、化學氣相成長(Chemical Vapor Deposition,CVD)或物理氣相成長(Physical Vapor Deposition,PVD)等的於高溫·真空下的處理、使用有機溶劑、酸性處理液或鹼性處理液等化學藥品的處理、鍍敷處理、光化射線的照射、加熱·冷卻處理等),從而使矽基板61的厚度變薄(例如較佳為平均厚度小於500 μm,更佳為1 μm~200 μm),而獲得薄型元件晶圓60a。 將元件晶圓薄型化後,於進行高溫·真空下的處理前的階段中,可設置利用溶劑對與元件晶圓的基材面的面積相比超出至外側的接著層進行清洗的步驟。具體而言,將元件晶圓薄型化後,使用溶解接著層的溶劑而將超出的接著層去除,藉此可防止因直接對接著層實施高溫·真空下的處理引起的接著層的變形、變質。作為利用溶劑對與元件晶圓的基材面的面積相比超出至外側的接著層進行清洗的步驟中所使用的溶劑,可使用所述暫時接著劑中所含的溶劑。 即,本發明中,接著層的膜面的面積較佳為小於支持體的基材面的面積。另外,本發明中,當將支持體的基材面的直徑設為C μm,將元件晶圓的基材面的直徑設為D μm,將接著層的膜面的直徑設為T μm時,更佳為滿足(C-200)≧T≧D。進而,當將支持體的基材面的直徑設為C μm,將元件晶圓的基材面的直徑設為D μm,將接著層的與支持體接觸側的膜面的直徑設為TC μm,將接著層的與元件晶圓接觸側的膜面的直徑設為TD μm時,較佳為滿足(C-200)≧TC >TD ≧D。藉由設為此種構成,而可進一步抑制因直接對接著層實施高溫·真空下的處理引起的接著層的變形、變質。 再者,所謂接著層的膜面的面積,是指自相對於支持體為垂直的方向觀察時的面積,不考慮膜面的凹凸。關於元件晶圓的基材面亦相同。即,此處所述的元件晶圓的基材面,例如為與圖3(A)~圖3(E)的61a相對應的面。關於接著層的膜面等的直徑亦同樣地考慮。 另外,關於接著層的膜面的直徑T,是指當將接著層的與支持體接觸側的膜面的直徑設為TC μm,將接著層的與元件晶圓接觸側的膜面的直徑設為TD μm時,T=(TC +TD )/2。支持體的基材面的直徑及元件晶圓的基材面的直徑是指與接著層接觸側的表面的直徑。 再者,關於支持體等,雖規定為「直徑」,但支持體等並非必須為數學意義上的圓形(正圓),只要大致為圓形即可。於並非正圓的情況下,將換算為相同面積的正圓時的直徑設為所述直徑。 另外,作為機械性或化學性處理,亦可於薄膜化處理之後進行如下處理:形成自薄型元件晶圓60a的背面61b1貫通矽基板的貫通孔(未圖示),並於該貫通孔內形成矽貫通電極(未圖示)。 可於將支持體12與元件晶圓60暫時接著後且直至剝離前的期間內進行加熱處理。作為加熱處理的一例,可列舉於機械性或化學性處理中進行加熱處理。 加熱處理中的最高到達溫度較佳為80℃~400℃,更佳為130℃~400℃,進而更佳為180℃~350℃。加熱處理中的最高到達溫度較佳為設為低於接著層的分解溫度的溫度。加熱處理較佳為於最高到達溫度下的30秒~30分鐘的加熱,更佳為於最高到達溫度下的1分鐘~10分鐘的加熱。Then, as shown in FIG. 3(C), the back surface 61b of the silicon substrate 61 is subjected to mechanical or chemical treatment (not particularly limited, for example, a thin film treatment such as sliding grinding or chemical mechanical polishing (Chemical Mechanical Polishing, CMP), etc.). High temperature and vacuum processing such as Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD), and processing using chemicals such as organic solvents, acidic processing liquids, or alkaline processing liquids , Plating treatment, actinic ray irradiation, heating and cooling treatment, etc.), so that the thickness of the silicon substrate 61 is reduced (for example, the average thickness is preferably less than 500 μm, and more preferably 1 μm to 200 μm) to obtain Thin element wafer 60a. After the element wafer is thinned, in the stage before the high temperature and vacuum processing, a step of cleaning the adhesive layer that extends to the outside compared to the area of the base surface of the element wafer with a solvent can be provided. Specifically, after the device wafer is thinned, the excess adhesive layer is removed using a solvent that dissolves the adhesive layer, thereby preventing deformation and deterioration of the adhesive layer caused by the direct treatment of the adhesive layer under high temperature and vacuum. . As the solvent used in the step of cleaning the adhesive layer that extends to the outside from the area of the substrate surface of the element wafer with a solvent, the solvent contained in the temporary adhesive can be used. That is, in the present invention, the area of the film surface of the adhesive layer is preferably smaller than the area of the substrate surface of the support. In the present invention, when the diameter of the substrate surface of the support is C μm, the diameter of the substrate surface of the element wafer is D μm, and the diameter of the film surface of the adhesive layer is T μm, It is better to satisfy (C-200)≧T≧D. Furthermore, when the diameter of the substrate surface of the support is set to C μm, the diameter of the substrate surface of the element wafer is set to D μm, and the diameter of the film surface of the adhesive layer on the side in contact with the support is set to T C μm, when the diameter of the film surface of the adhesive layer on the side in contact with the element wafer is set to T D μm, it is preferable to satisfy (C-200)≧T C >T D ≧D. By adopting such a configuration, it is possible to further suppress the deformation and deterioration of the adhesive layer caused by directly performing high-temperature and vacuum processing on the adhesive layer. In addition, the area of the film surface of the adhesive layer refers to the area when viewed from a direction perpendicular to the support, and the unevenness of the film surface is not considered. The same applies to the substrate surface of the device wafer. That is, the substrate surface of the element wafer described here is, for example, a surface corresponding to 61a in FIGS. 3(A) to 3(E). The same applies to the diameter of the film surface of the adhesive layer. In addition, the diameter T of the film surface of the adhesive layer refers to the diameter of the film surface of the adhesive layer on the side in contact with the element wafer when the diameter of the film surface of the adhesive layer in contact with the support is set to T C μm. When it is set to T D μm, T=(T C +T D )/2. The diameter of the substrate surface of the support and the diameter of the substrate surface of the element wafer refer to the diameter of the surface on the side in contact with the adhesive layer. In addition, although the support body and the like are defined as the "diameter", the support body and the like do not necessarily have to be circular (perfect circle) in the mathematical sense, as long as they are substantially circular. When it is not a perfect circle, the diameter when converted to a perfect circle of the same area is set as the above-mentioned diameter. In addition, as a mechanical or chemical treatment, the following treatment may be performed after the thinning treatment: a through hole (not shown) is formed through the silicon substrate from the back surface 61b1 of the thin element wafer 60a, and formed in the through hole Silicon through electrode (not shown). The heat treatment may be performed during the period after the support 12 and the element wafer 60 are temporarily bonded and before peeling. As an example of the heat treatment, heat treatment in mechanical or chemical treatment can be cited. The maximum reached temperature in the heat treatment is preferably 80°C to 400°C, more preferably 130°C to 400°C, and still more preferably 180°C to 350°C. The highest reached temperature in the heat treatment is preferably set to a temperature lower than the decomposition temperature of the adhesive layer. The heating treatment is preferably heating for 30 seconds to 30 minutes at the highest reaching temperature, and more preferably heating for 1 minute to 10 minutes at the highest reaching temperature.

繼而,如圖3(D)所示,使支持體12自薄型元件晶圓60a脫離。脫離的方法並無特別限定,較佳為不進行任何處理而自薄型元件晶圓60a的端部向相對於薄型元件晶圓60a為垂直的方向拉起而進行剝離。此時,剝離界面較佳為於支持體12與接著層11的界面剝離。該情況下,支持體12與接著層11的界面的剝離強度A、元件晶圓表面61a與接著層11的剝離強度B較佳為滿足以下的式。   A<B …式(1)Then, as shown in FIG. 3(D), the support 12 is detached from the thin element wafer 60a. The method of detachment is not particularly limited, and it is preferable to pull up from the end of the thin device wafer 60a in a direction perpendicular to the thin device wafer 60a without performing any processing to peel off. At this time, the peeling interface is preferably peeled from the interface between the support 12 and the adhesive layer 11. In this case, it is preferable that the peeling strength A of the interface between the support 12 and the adhesive layer 11 and the peeling strength B of the element wafer surface 61a and the adhesive layer 11 satisfy the following formula. A<B …Equation (1)

另外,使接著層11與後述的剝離液接觸,然後,視需要亦可於使薄型元件晶圓60a相對於支持體12滑動後,自薄型元件晶圓60a的端部向相對於元件晶圓為垂直的方向拉起而進行剝離。In addition, the adhesive layer 11 is brought into contact with a peeling liquid described later, and then, if necessary, after the thin element wafer 60a is slid relative to the support 12, the thin element wafer 60a may be moved from the end of the thin element wafer 60a to the element wafer. Pull up in the vertical direction to peel off.

<剝離液> 以下,對剝離液進行詳細說明。 作為剝離液,可使用水及溶劑(有機溶劑)。 另外,作為剝離液,較佳為溶解接著層11的有機溶劑。作為有機溶劑,例如可列舉:脂肪族烴類(己烷、庚烷、埃索帕(Isopar)E、H、G(埃索(ESSO)化學(股)製造)、檸檬烯、對薄荷烷、壬烷、癸烷、十二烷、十氫萘等)、芳香族烴類(甲苯、二甲苯、苯甲醚、均三甲苯、乙基苯、丙基苯、枯烯、正丁基苯、第二丁基苯、異丁基苯、第三丁基苯、戊基苯、異戊基苯、(2,2-二甲基丙基)苯、1-苯基己烷、1-苯基庚烷、1-苯基辛烷、1-苯基壬烷、1-苯基癸烷、環丙基苯、環己基苯、2-乙基甲苯、1,2-二乙基苯、鄰-異丙基甲苯、茚滿、1,2,3,4-四氫萘、3-乙基甲苯、間-異丙基甲苯、1,3-二異丙基苯、4-乙基甲苯、1,4-二乙基苯、對-異丙基甲苯、1,4-二異丙基苯、4-第三丁基甲苯、1,4-二-第三丁基苯、1,3-二乙基苯、1,2,3-三甲基苯、1,2,4-三甲基苯、4-第三丁基-鄰二甲苯、1,2,4-三乙基苯、1,3,5-三乙基苯、1,3,5-三異丙基苯、5-第三丁基-間二甲苯、3,5-二-第三丁基甲苯、1,2,3,5-四甲基苯、1,2,4,5-四甲基苯、五甲基苯等)、鹵化烴(二氯甲烷、二氯乙烷、三氯乙烯(Trichloroethylene)、單氯苯等)、極性溶劑。作為極性溶劑,特別是可列舉:醇類(甲醇、乙醇、丙醇、異丙醇、1-丁醇、1-戊醇、1-己醇、1-庚醇、1-辛醇、2-辛醇、2-乙基-1-己醇、1-壬醇、1-癸醇、苄基醇、乙二醇單甲醚、2-乙氧基乙醇、二乙二醇單乙醚、二乙二醇單己醚、三乙二醇單甲醚、丙二醇單乙醚、丙二醇單甲醚、聚乙二醇單甲醚、聚丙二醇、四乙二醇、乙二醇單丁醚、乙二醇單苄基醚、乙二醇單苯基醚、丙二醇單苯基醚、甲基苯基甲醇、正戊醇、甲基戊醇等)、酮類(丙酮、甲基乙基酮、乙基丁基酮、環己酮等)、酯類(乙酸乙酯、乙酸丙酯、乙酸丁酯、乙酸戊酯、乙酸苄基酯、乳酸甲酯、乳酸丁酯、乙二醇單丁醚乙酸酯、丙二醇單甲醚乙酸酯、二乙二醇乙酸酯、二乙基鄰苯二甲酸酯、乙醯丙酸丁酯等)、其他(三乙基磷酸酯、三甲苯酚基磷酸酯、N-苯基乙醇胺、N-苯基二乙醇胺、N-甲基二乙醇胺、N-乙基二乙醇胺、4-(2-羥基乙基)嗎啉、N,N-二甲基乙醯胺、N-甲基吡咯啶酮等)等。<Peeling liquid> Hereinafter, the peeling liquid will be described in detail. As the peeling liquid, water and a solvent (organic solvent) can be used. In addition, as the peeling liquid, an organic solvent that dissolves the adhesive layer 11 is preferable. Examples of organic solvents include: aliphatic hydrocarbons (hexane, heptane, Isopar E, H, G (manufactured by ESSO Chemical Co., Ltd.), limonene, p-menthane, nonane Alkane, decane, dodecane, decahydronaphthalene, etc.), aromatic hydrocarbons (toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene, n-butylbenzene, Dibutylbenzene, isobutylbenzene, tertiary butylbenzene, pentylbenzene, isopentylbenzene, (2,2-dimethylpropyl)benzene, 1-phenylhexane, 1-phenylheptane Alkane, 1-phenyloctane, 1-phenylnonane, 1-phenyldecane, cyclopropylbenzene, cyclohexylbenzene, 2-ethyltoluene, 1,2-diethylbenzene, o-iso Propyl toluene, indane, 1,2,3,4-tetrahydronaphthalene, 3-ethyltoluene, m-isopropyl toluene, 1,3-diisopropylbenzene, 4-ethyltoluene, 1, 4-diethylbenzene, p-isopropyltoluene, 1,4-diisopropylbenzene, 4-tert-butyltoluene, 1,4-di-tert-butylbenzene, 1,3-diethyl Benzene, 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 4-tert-butyl-o-xylene, 1,2,4-triethylbenzene, 1,3 ,5-Triethylbenzene, 1,3,5-Triisopropylbenzene, 5-tert-butyl-m-xylene, 3,5-di-tert-butyltoluene, 1,2,3,5 -Tetramethylbenzene, 1,2,4,5-tetramethylbenzene, pentamethylbenzene, etc.), halogenated hydrocarbons (dichloromethane, dichloroethane, trichloroethylene, monochlorobenzene, etc.) , Polar solvents. As polar solvents, particularly alcohols (methanol, ethanol, propanol, isopropanol, 1-butanol, 1-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 2- Octanol, 2-ethyl-1-hexanol, 1-nonanol, 1-decanol, benzyl alcohol, ethylene glycol monomethyl ether, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethyl Glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol mono Benzyl ether, ethylene glycol monophenyl ether, propylene glycol monophenyl ether, methyl phenyl methanol, n-pentanol, methyl pentanol, etc.), ketones (acetone, methyl ethyl ketone, ethyl butyl, etc.) Ketones, cyclohexanone, etc.), esters (ethyl acetate, propyl acetate, butyl acetate, amyl acetate, benzyl acetate, methyl lactate, butyl lactate, ethylene glycol monobutyl ether acetate, Propylene glycol monomethyl ether acetate, diethylene glycol acetate, diethyl phthalate, butyl acetyl propionate, etc.), others (triethyl phosphate, tricresyl phosphate, N -Phenylethanolamine, N-phenyldiethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, 4-(2-hydroxyethyl)morpholine, N,N-dimethylacetamide, N -Methylpyrrolidone, etc.) and so on.

進而,就剝離性的觀點而言,剝離液可含有鹼、酸及界面活性劑。於調配該些成分的情況下,調配量較佳為分別為剝離液的0.1質量%~5.0質量%。 進而,就剝離性的觀點而言,亦較佳為將兩種以上的有機溶劑及水、兩種以上的鹼、酸及界面活性劑混合的形態。Furthermore, from the viewpoint of releasability, the peeling liquid may contain an alkali, an acid, and a surfactant. In the case of blending these components, the blending amounts are preferably 0.1% by mass to 5.0% by mass of the peeling liquid. Furthermore, from the viewpoint of releasability, a form in which two or more kinds of organic solvents and water, two or more kinds of bases, acids, and surfactants are mixed is also preferable.

作為鹼,例如可使用磷酸三鈉、磷酸三鉀、磷酸三銨、磷酸二鈉、磷酸二鉀、磷酸二銨、碳酸鈉、碳酸鉀、碳酸銨、碳酸氫鈉、碳酸氫鉀、碳酸氫銨、硼酸鈉、硼酸鉀、硼酸銨、氫氧化鈉、氫氧化銨、氫氧化鉀及氫氧化鋰等無機鹼劑、或單甲胺、二甲胺、三甲胺、單乙胺、二乙胺、三乙胺、單異丙胺、二異丙胺、三異丙胺、正丁胺、單乙醇胺、二乙醇胺、三乙醇胺、單異丙醇胺、二異丙醇胺、乙烯亞胺、乙二胺、吡啶、四甲基氫氧化銨等有機鹼劑。該些鹼劑可單獨使用或組合使用兩種以上。As the base, for example, trisodium phosphate, tripotassium phosphate, triammonium phosphate, disodium phosphate, dipotassium phosphate, diammonium phosphate, sodium carbonate, potassium carbonate, ammonium carbonate, sodium bicarbonate, potassium bicarbonate, ammonium bicarbonate can be used. , Sodium borate, potassium borate, ammonium borate, sodium hydroxide, ammonium hydroxide, potassium hydroxide and lithium hydroxide and other inorganic alkali agents, or monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, Triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, ethyleneimine, ethylenediamine, pyridine , Tetramethylammonium hydroxide and other organic alkali agents. These alkali agents can be used alone or in combination of two or more.

作為酸,可使用鹵化烴、硫酸、硝酸、磷酸、硼酸等無機酸、或甲磺酸、乙磺酸、苯磺酸、對甲苯磺酸、三氟甲磺酸、乙酸、檸檬酸、甲酸、葡萄糖酸、乳酸、草酸、酒石酸等有機酸。As the acid, inorganic acids such as halogenated hydrocarbons, sulfuric acid, nitric acid, phosphoric acid, and boric acid, or methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid, formic acid, etc. can be used. Organic acids such as gluconic acid, lactic acid, oxalic acid, and tartaric acid.

作為界面活性劑,可使用陰離子系、陽離子系、非離子系、兩性離子系的界面活性劑。該情況下,相對於鹼性水溶液的總量,界面活性劑的含量較佳為1質量%~20質量%,更佳為1質量%~10質量%。 藉由將界面活性劑的含量設為所述範圍內,而存在可進一步提高接著層11與薄型元件晶圓60a的剝離性的傾向。As the surfactant, anionic, cationic, nonionic, and zwitterionic surfactants can be used. In this case, the content of the surfactant relative to the total amount of the alkaline aqueous solution is preferably 1% by mass to 20% by mass, more preferably 1% by mass to 10% by mass. By setting the content of the surfactant within the above range, there is a tendency that the peelability between the adhesive layer 11 and the thin device wafer 60a can be further improved.

作為陰離子系界面活性劑,並無特別限定,可列舉:脂肪酸鹽類、松脂酸鹽類、羥基烷烴磺酸鹽類、烷烴磺酸鹽類、二烷基磺基琥珀酸鹽類、直鏈烷基苯磺酸鹽類、支鏈烷基苯磺酸鹽類、烷基萘磺酸鹽類、烷基二苯基醚(二)磺酸鹽類、烷基苯氧基聚氧乙烯烷基磺酸鹽類、聚氧乙烯烷基磺基苯基醚鹽類、N-烷基-N-油烯基牛磺酸鈉類、N-烷基磺基琥珀酸單醯胺二鈉鹽類、石油磺酸鹽類、硫酸化蓖麻油、硫酸化牛脂油、脂肪酸烷基酯的硫酸酯鹽類、烷基硫酸酯鹽類、聚氧乙烯烷基醚硫酸酯鹽類、脂肪酸單甘油酯硫酸酯鹽類、聚氧乙烯烷基苯基醚硫酸酯鹽類、聚氧乙烯苯乙烯基苯基醚硫酸酯鹽類、烷基磷酸酯鹽類、聚氧乙烯烷基醚磷酸酯鹽類、聚氧乙烯烷基苯基醚磷酸酯鹽類、苯乙烯-順丁烯二酸酐共聚物的部分皂化物類、烯烴-順丁烯二酸酐共聚物的部分皂化物類、萘磺酸鹽甲醛縮合物類等。其中,可特佳地使用烷基苯磺酸鹽類、烷基萘磺酸鹽類、烷基二苯基醚(二)磺酸鹽類。The anionic surfactant is not particularly limited, and examples thereof include fatty acid salts, rosinates, hydroxyalkane sulfonates, alkane sulfonates, dialkylsulfosuccinates, and linear alkanes. Base benzene sulfonates, branched chain alkyl benzene sulfonates, alkyl naphthalene sulfonates, alkyl diphenyl ether (two) sulfonates, alkyl phenoxy polyoxyethylene alkyl sulfonates Acid salts, polyoxyethylene alkylsulfophenyl ether salts, sodium N-alkyl-N-oleyl taurate, disodium N-alkylsulfosuccinic acid monoamide, petroleum Sulfonates, sulfated castor oil, sulfated tallow oil, sulfate ester salts of fatty acid alkyl esters, alkyl sulfate ester salts, polyoxyethylene alkyl ether sulfate ester salts, fatty acid monoglyceride sulfate ester salts Types, polyoxyethylene alkyl phenyl ether sulfate ester salts, polyoxyethylene styryl phenyl ether sulfate ester salts, alkyl phosphate ester salts, polyoxyethylene alkyl ether phosphate ester salts, polyoxyethylene Alkyl phenyl ether phosphate salts, partial saponification products of styrene-maleic anhydride copolymer, partial saponification products of olefin-maleic anhydride copolymer, naphthalenesulfonate formaldehyde condensate, etc. . Among them, alkyl benzene sulfonates, alkyl naphthalene sulfonates, and alkyl diphenyl ether (di) sulfonates can be particularly preferably used.

作為陽離子系界面活性劑,並無特別限定,可使用先前公知者。例如可列舉:烷基胺鹽類、四級銨鹽類、烷基咪唑鎓鹽、聚氧乙烯烷基胺鹽類、聚乙烯聚胺衍生物。It does not specifically limit as a cationic surfactant, A conventionally well-known thing can be used. Examples include alkylamine salts, quaternary ammonium salts, alkylimidazolium salts, polyoxyethylene alkylamine salts, and polyethylene polyamine derivatives.

作為非離子系界面活性劑,並無特別限定,可列舉:聚乙二醇型的高級醇環氧乙烷加成物、烷基苯酚環氧乙烷加成物、烷基萘酚環氧乙烷加成物、苯酚環氧乙烷加成物、萘酚環氧乙烷加成物、脂肪酸環氧乙烷加成物、多元醇脂肪酸酯環氧乙烷加成物、高級烷基胺環氧乙烷加成物、脂肪酸醯胺環氧乙烷加成物、油脂的環氧乙烷加成物、聚丙二醇環氧乙烷加成物、二甲基矽氧烷-環氧乙烷嵌段共聚物、二甲基矽氧烷-(環氧丙烷-環氧乙烷)嵌段共聚物、多元醇型的甘油的脂肪酸酯、季戊四醇的脂肪酸酯、山梨糖醇及山梨糖醇酐的脂肪酸酯、蔗糖的脂肪酸酯、多元醇的烷基醚、烷醇胺類的脂肪酸醯胺等。其中,較佳為具有芳香環與環氧乙烷鏈者,更佳為烷基經取代或未經取代的苯酚環氧乙烷加成物或者烷基經取代或未經取代的萘酚環氧乙烷加成物。The nonionic surfactant is not particularly limited, and examples include polyethylene glycol type higher alcohol ethylene oxide adducts, alkylphenol ethylene oxide adducts, and alkylnaphthol ethylene oxide adducts. Alkyl adduct, phenol ethylene oxide adduct, naphthol ethylene oxide adduct, fatty acid ethylene oxide adduct, polyhydric alcohol fatty acid ester ethylene oxide adduct, higher alkyl amine Ethylene oxide adduct, fatty acid amide ethylene oxide adduct, oil and fat ethylene oxide adduct, polypropylene glycol ethylene oxide adduct, dimethylsiloxane-ethylene oxide Block copolymers, dimethylsiloxane-(propylene oxide-ethylene oxide) block copolymers, fatty acid esters of polyol type glycerin, fatty acid esters of pentaerythritol, sorbitol and sorbitol Fatty acid esters of anhydrides, fatty acid esters of sucrose, alkyl ethers of polyhydric alcohols, and fatty acid amides of alkanolamines. Among them, those having an aromatic ring and an ethylene oxide chain are preferred, and phenol ethylene oxide adducts with substituted or unsubstituted alkyl groups or naphthol epoxy resins with substituted or unsubstituted alkyl groups are more preferred. Ethane adduct.

作為兩性離子系界面活性劑,並無特別限定,可列舉:烷基二甲基氧化胺等氧化胺系、烷基甜菜鹼等甜菜鹼系、烷基胺基脂肪酸鈉等胺基酸系。特別是可較佳地使用可具有取代基的烷基二甲基氧化胺、可具有取代基的烷基羧基甜菜鹼、可具有取代基的烷基磺基甜菜鹼。具體而言,可使用日本專利特開2008-203359號公報的段落編號[0256]的式(2)所示出的化合物、日本專利特開2008-276166號公報的段落編號[0028]的式(I)、式(II)、式(VI)所示出的化合物、日本專利特開2009-47927號公報的段落編號[0022]~[0029]所示出的化合物。The zwitterionic surfactant is not particularly limited, and examples thereof include amine oxide systems such as alkyl dimethyl amine oxide, betaine systems such as alkyl betaine, and amino acid systems such as sodium alkylamino fatty acid sodium. In particular, an optionally substituted alkyl dimethyl amine oxide, an optionally substituted alkyl carboxy betaine, and an optionally substituted alkyl sultaine can be preferably used. Specifically, the compound represented by the formula (2) of the paragraph number [0256] of JP 2008-203359 A, and the formula of the paragraph number [0028] of JP 2008-276166 can be used ( I) The compound represented by the formula (II) and the formula (VI), the compound represented by paragraph numbers [0022] to [0029] of JP 2009-47927 A.

進而,視需要剝離液亦可含有如消泡劑及硬水軟化劑般的添加劑。Furthermore, the peeling liquid may contain additives such as a defoamer and a hard water softener if necessary.

而且,如圖3(E)所示,藉由將接著層11自薄型元件晶圓60a去除,而可獲得薄型元件晶圓。 接著層11的去除方法例如可列舉:將接著層以膜狀的狀態剝離去除(機械剝離)的方法;於利用剝離液使接著層膨潤後,進行剝離去除的方法;對接著層噴射剝離液而進行破壞去除的方法;使接著層溶解於剝離液而溶解去除的方法;藉由光化射線、放射線的照射或進行加熱來使接著層分解、氣化而去除的方法等。可較佳地使用將接著層以膜狀的狀態剝離去除的方法;使接著層溶解於水溶液或有機溶劑而溶解去除的方法。作為有機溶劑,可使用所述剝離液中所說明的有機溶劑。就削減溶劑的使用量的觀點而言,較佳為以膜狀的狀態進行去除。另外,就減少元件晶圓表面的損傷的觀點而言,較佳為溶解除去。 為了以膜狀的狀態進行去除,較佳為元件晶圓表面61a與接著層11的剝離強度B滿足以下的式(2)。   B≦4 N/cm  …式(2)Furthermore, as shown in FIG. 3(E), by removing the adhesive layer 11 from the thin device wafer 60a, a thin device wafer can be obtained. Examples of methods for removing the adhesive layer 11 include: a method of peeling and removing the adhesive layer in a film-like state (mechanical peeling); a method of peeling and removing the adhesive layer after swelling the adhesive layer with a peeling liquid; The method of destroying and removing; the method of dissolving and removing the adhesive layer by dissolving it in the peeling liquid; the method of decomposing, vaporizing and removing the adhesive layer by irradiation of actinic rays, radiation or heating. A method of peeling and removing the adhesive layer in a film-like state can be preferably used; a method of dissolving and removing the adhesive layer by dissolving the adhesive layer in an aqueous solution or an organic solvent. As the organic solvent, the organic solvents described in the peeling liquid can be used. From the viewpoint of reducing the amount of solvent used, it is preferable to remove in a film-like state. In addition, from the viewpoint of reducing damage to the surface of the element wafer, it is preferable to dissolve and remove. In order to remove in a film-like state, it is preferable that the peel strength B of the element wafer surface 61a and the adhesive layer 11 satisfy the following formula (2). B≦4 N/cm …Equation (2)

當將支持體12與接著層11的界面的剝離強度設為A,將元件晶圓的表面61a與接著層11的剝離強度設為B時,藉由同時滿足所述式(1)及式(2),可於將支持體12自薄型元件晶圓60a剝離時,不進行任何處理而自薄型元件晶圓60a的端部向相對於元件晶圓為垂直的方向拉起而進行剝離,且可將元件晶圓表面61a上的接著層11以膜狀的狀態去除。 使支持體12自薄型元件晶圓60a脫離後,視需要對薄型元件晶圓60a實施各種公知的處理,而製造具有薄型元件晶圓60a的半導體裝置。When the peeling strength of the interface between the support 12 and the adhesive layer 11 is set to A, and the peeling strength of the surface 61a of the device wafer and the adhesive layer 11 is set to B, the above formula (1) and formula ( 2) When the support 12 is peeled from the thin device wafer 60a, the end of the thin device wafer 60a can be pulled up from the end of the thin device wafer 60a in a direction perpendicular to the device wafer to be peeled off without any processing. The adhesive layer 11 on the surface 61a of the element wafer is removed in a film-like state. After the support 12 is detached from the thin device wafer 60a, various well-known processes are performed on the thin device wafer 60a as necessary to manufacture a semiconductor device having the thin device wafer 60a.

另外,於接著層附著於支持體上的情況下,可藉由去除接著層而使支持體再生。作為去除接著層的方法,可列舉以膜狀的狀態下的剝離;藉由刷子、超音波、冰粒子、霧劑(aerosol)的吹附的物理性去除方法;使其溶解於水溶液或有機溶劑而溶解去除的方法;藉由光化射線、放射線、熱的照射而使其分解、氣化的方法等化學性去除方法;根據支持體,可利用先前已知的清洗方法。 例如,於使用矽基板作為支持體的情況下,可使用先前已知的矽晶圓的清洗方法。例如作為於進行化學性去除時可使用的水溶液或有機溶劑,可列舉強酸、強鹼、強氧化劑或該些的混合物,具體而言,可列舉:硫酸、鹽酸、氫氟酸、硝酸、有機酸等酸類;四甲基銨、氨、有機鹼等鹼類;過氧化氫等氧化劑;或氨與過氧化氫的混合物、鹽酸與過氧化氫水的混合物、硫酸與過氧化氫水的混合物、氫氟酸與過氧化氫水的混合物、氫氟酸與氟化銨的混合物等。In addition, when the adhesive layer is attached to the support, the support can be regenerated by removing the adhesive layer. Examples of methods for removing the adhesive layer include peeling in a film-like state; physical removal by brush, ultrasonic, ice particles, or aerosol blowing; and dissolving in an aqueous solution or organic solvent The method of dissolving and removing; the method of decomposing and vaporizing by irradiation of actinic rays, radiation, heat and other chemical removal methods; depending on the support, previously known cleaning methods can be used. For example, in the case of using a silicon substrate as a support, a previously known cleaning method for silicon wafers can be used. For example, as aqueous solutions or organic solvents that can be used for chemical removal, strong acids, strong bases, strong oxidants, or mixtures of these can be cited. Specifically, sulfuric acid, hydrochloric acid, hydrofluoric acid, nitric acid, and organic acids can be cited. And other acids; bases such as tetramethylammonium, ammonia, organic bases; hydrogen peroxide and other oxidants; or a mixture of ammonia and hydrogen peroxide, a mixture of hydrochloric acid and hydrogen peroxide, a mixture of sulfuric acid and hydrogen peroxide, hydrogen Mixtures of hydrofluoric acid and hydrogen peroxide water, mixtures of hydrofluoric acid and ammonium fluoride, etc.

就使用經再生的支持體的情況下的接著性的觀點而言,較佳為使用支持體清洗液。 支持體清洗液較佳為含有pKa小於0的酸(強酸)與過氧化氫。作為pKa小於0的酸,可自碘化氫、高氯酸、溴化氫、氯化氫、硝酸、硫酸等無機酸或烷基磺酸、芳基磺酸等有機酸中選擇。就支持體上的接著層的清洗性的觀點而言,較佳為無機酸,特佳為硫酸。From the viewpoint of adhesiveness in the case of using a regenerated support, it is preferable to use a support cleaning solution. The support cleaning solution preferably contains an acid (strong acid) with a pKa of less than 0 and hydrogen peroxide. The acid having a pKa of less than 0 can be selected from inorganic acids such as hydrogen iodide, perchloric acid, hydrogen bromide, hydrogen chloride, nitric acid, and sulfuric acid, or organic acids such as alkyl sulfonic acid and aryl sulfonic acid. From the viewpoint of the cleaning properties of the adhesive layer on the support, an inorganic acid is preferred, and sulfuric acid is particularly preferred.

作為過氧化氫,可較佳地使用30質量%的過氧化氫水,所述強酸與30質量%的過氧化氫水的混合比以質量比計較佳為1:10~100:1,更佳為1:1~10:1,特佳為3:1~5:1。As the hydrogen peroxide, 30% by mass hydrogen peroxide water can be preferably used, and the mixing ratio of the strong acid and 30% by mass hydrogen peroxide water is preferably 1:10-100:1 in terms of mass ratio, more preferably It is 1:1-10:1, particularly preferably 3:1-5:1.

<<第二實施形態>> 一倂參照圖4(A)~圖4(E),對經過製造積層體的步驟的半導體製造方法的第二實施形態進行說明。對與所述第一實施形態相同部分賦予相同的符號而省略其說明。 圖4(A)~圖4(E)分別為對支持體與元件晶圓的暫時接著進行說明的概略剖面圖(圖4(A)、圖4(B)),表示暫時接著於支持體的元件晶圓經薄型化的狀態(圖4(C))、剝離了支持體與元件晶圓的狀態(圖4(D))、將接著層自元件晶圓去除後的狀態(圖4(E))的概略剖面圖。 該實施形態中,如圖4(A)所示,將接著層形成於元件晶圓的表面61a上的方面與所述第一實施形態不同。 於元件晶圓60的表面61a上設置接著層11a的情況下,可藉由於元件晶圓60的表面61a的表面應用(較佳為塗佈)暫時接著劑,繼而進行乾燥(烘烤)而形成。乾燥例如可於60℃~150℃下進行10秒~2分鐘。 繼而,如圖4(B)所示,使支持體12與元件晶圓60壓接,從而使支持體12與元件晶圓60暫時接著。繼而,如圖4(C)所示,對矽基板61的背面61b實施機械性或化學性處理,從而使矽基板61的厚度變薄,而獲得薄型元件晶圓60a。繼而,如圖4(D)所示,使支持體12自薄型元件晶圓60a脫離。而且,如圖4(E)所示,可將接著層11自薄型元件晶圓60a去除。<<Second Embodiment>> Referring to FIGS. 4(A) to 4(E), a second embodiment of a semiconductor manufacturing method that has passed through the steps of manufacturing a laminate will be described. The same reference numerals are given to the same parts as in the first embodiment, and the description thereof is omitted. 4(A) to 4(E) are schematic cross-sectional views (FIG. 4(A), FIG. 4(B)) for explaining the temporary connection of the support and the device wafer, respectively, showing the temporary connection to the support The thinned element wafer state (Figure 4(C)), the state where the support and the element wafer are peeled off (Figure 4(D)), the state after the adhesive layer is removed from the element wafer (Figure 4(E) )) is a schematic cross-sectional view. In this embodiment, as shown in FIG. 4(A), the point that the adhesive layer is formed on the surface 61 a of the element wafer is different from the first embodiment. In the case where the adhesive layer 11a is provided on the surface 61a of the element wafer 60, it can be formed by applying (preferably coating) a temporary adhesive on the surface 61a of the element wafer 60 and then drying (baking). . Drying can be performed, for example, at 60°C to 150°C for 10 seconds to 2 minutes. Then, as shown in FIG. 4(B), the support 12 and the element wafer 60 are press-contacted to temporarily bond the support 12 and the element wafer 60. Then, as shown in FIG. 4(C), the back surface 61b of the silicon substrate 61 is mechanically or chemically processed to reduce the thickness of the silicon substrate 61 to obtain a thin device wafer 60a. Then, as shown in FIG. 4(D), the support 12 is detached from the thin element wafer 60a. Furthermore, as shown in FIG. 4(E), the adhesive layer 11 can be removed from the thin element wafer 60a.

<<第三實施形態>> 一倂參照圖5(A)~圖5(E),對經過製造積層體的步驟的半導體製造方法的第三實施形態進行說明。對與所述第一實施形態相同部分賦予相同的符號而省略其說明。 圖5(A)~圖5(E)分別為對支持體與元件晶圓的暫時接著進行說明的概略剖面圖(圖5(A)、圖5(B)),表示暫時接著於支持體的元件晶圓經薄型化的狀態(圖5(C))、剝離了支持體與元件晶圓的狀態(圖5(D))、將接著層自元件晶圓去除後的狀態(圖5(E))的概略剖面圖。 該實施形態中,如圖5(A)、圖5(B)所示,分別將接著層11b、接著層11c形成於支持體12及元件晶圓的表面61a上,並將支持體及元件晶圓的形成有接著層側的面彼此壓接來製造積層體(將支持體12與元件晶圓60暫時接著)的方面與所述第一實施形態不同。 接著層11b及接著層11c的至少一者可使用本發明的暫時接著劑而形成。可使用本發明的暫時接著劑來形成接著層11b及接著層11c兩者,亦可僅其中一接著層使用本發明的暫時接著劑而形成、另一接著層使用所述暫時接著劑而形成。較佳為使用所述暫時接著劑來形成接著層11b,使用本發明的暫時接著劑來形成接著層11c。 另外,接著層11b、接著層11c分別可僅包含一層,亦可為積層兩層以上的接著層而成的積層體。即,各接著層亦可重疊塗佈兩種以上的暫時接著劑而形成。 將支持體12與元件晶圓60暫時接著後,繼而,如圖5(C)所示,對矽基板61的背面61b實施機械性或化學性處理,從而使矽基板61的厚度變薄,而獲得薄型元件晶圓60a。繼而,如圖5(D)所示,使支持體12自薄型元件晶圓60a脫離。而且,如圖5(E)所示,可將接著層11d自薄型元件晶圓60a去除。<<Third Embodiment>> Referring to FIGS. 5(A) to 5(E), a third embodiment of a semiconductor manufacturing method that has passed through the steps of manufacturing a laminate will be described. The same reference numerals are given to the same parts as in the first embodiment, and the description thereof is omitted. Figures 5(A) to 5(E) are schematic cross-sectional views (Figures 5(A) and 5(B)) for explaining the temporary attachment of the support and the element wafer, respectively, showing the temporary attachment to the support The thinned state of the element wafer (Figure 5(C)), the state where the support and the element wafer are peeled off (Figure 5(D)), the state after the adhesive layer is removed from the element wafer (Figure 5(E) )) is a schematic cross-sectional view. In this embodiment, as shown in FIG. 5(A) and FIG. 5(B), the adhesive layer 11b and the adhesive layer 11c are formed on the support 12 and the surface 61a of the device wafer, respectively, and the support and the device wafer The circular surfaces on the side where the adhesive layer is formed are press-bonded to each other to manufacture a laminated body (temporary bonding of the support 12 and the element wafer 60) is different from the above-mentioned first embodiment. At least one of the adhesive layer 11b and the adhesive layer 11c can be formed using the temporary adhesive of the present invention. The temporary adhesive of the present invention may be used to form both the adhesive layer 11b and the adhesive layer 11c, or only one of the adhesive layers may be formed using the temporary adhesive of the present invention, and the other adhesive layer may be formed using the temporary adhesive. Preferably, the temporary adhesive is used to form the adhesive layer 11b, and the temporary adhesive of the present invention is used to form the adhesive layer 11c. In addition, each of the adhesive layer 11b and the adhesive layer 11c may include only one layer, or may be a laminate in which two or more adhesive layers are laminated. That is, each adhesive layer may be formed by overlaying two or more temporary adhesives. After the support 12 and the element wafer 60 are temporarily attached, then, as shown in FIG. 5(C), the back surface 61b of the silicon substrate 61 is mechanically or chemically treated to make the thickness of the silicon substrate 61 thinner. A thin element wafer 60a is obtained. Then, as shown in FIG. 5(D), the support 12 is detached from the thin element wafer 60a. Furthermore, as shown in FIG. 5(E), the adhesive layer 11d can be removed from the thin element wafer 60a.

<<先前的實施形態>> 繼而,對先前的實施形態進行說明。 圖6是對先前的接著性支持體與元件晶圓的暫時接著狀態的解除進行說明的概略剖面圖。 於先前的實施形態中,如圖6所示,使用在支持體12上設置有由先前的暫時接著劑形成的接著層11a而成的接著性支持體100a作為接著性支持體,除此以外,與參照圖3(A)~圖3(E)所說明的順序同樣地,將接著性支持體100a與元件晶圓暫時接著,進行元件晶圓中的矽基板的薄膜化處理,繼而與所述順序同樣地,將薄型元件晶圓60a自接著性支持體100a剝離。<<Previous embodiment>> Next, the previous embodiment will be described. 6 is a schematic cross-sectional view for explaining the release of the temporary bonding state between the conventional adhesive support and the element wafer. In the previous embodiment, as shown in FIG. 6, an adhesive support 100a in which an adhesive layer 11a formed of a previous temporary adhesive is provided on the support 12 is used as an adhesive support. In the same manner as the procedure described with reference to FIGS. 3(A) to 3(E), the adhesive support 100a is temporarily attached to the device wafer, and the silicon substrate in the device wafer is thinned. In the same procedure, the thin element wafer 60a is peeled from the adhesive support 100a.

然而,若利用先前的暫時接著劑,則藉由高的接著力而將元件晶圓暫時支持,難以不對元件晶圓造成損傷而容易地解除對元件晶圓的暫時支持。例如,若為了使元件晶圓與支持體的暫時接著充分而採用先前的暫時接著劑中的接著性高的暫時接著劑,則成為元件晶圓與支持體的暫時接著過強的傾向。因此,為了解除該過強的暫時接著,例如如圖6所示,在薄型元件晶圓60a的背面貼附膠帶(例如切割膠帶)70,在自接著性支持體100a剝離薄型元件晶圓60a的情況下,容易產生如下不良情況:結構物63自設有結構物63的元件晶片62脫離等,而使元件晶片62破損。 另一方面,若採用先前的暫時接著劑中的接著性低的暫時接著劑,則雖然可容易地解除對元件晶圓的暫時支持,但畢竟元件晶圓與支持體的暫時接著過弱,容易產生無法藉由支持體確實地支持元件晶圓的不良情況。However, if the previous temporary adhesive is used, the device wafer is temporarily supported by a high adhesive force, and it is difficult to easily release the temporary support of the device wafer without causing damage to the device wafer. For example, if a temporary adhesive with high adhesiveness among the conventional temporary adhesives is used in order to make sufficient temporary bonding between the element wafer and the support, the temporary adhesive between the element wafer and the support tends to be too strong. Therefore, in order to relieve this excessively strong temporary bonding, for example, as shown in FIG. 6, an adhesive tape (for example, a dicing tape) 70 is attached to the back surface of the thin element wafer 60a, and the thin element wafer 60a is peeled off from the self-adhesive support 100a. In this case, a problem is likely to occur that the structure 63 is detached from the element wafer 62 on which the structure 63 is provided, and the element wafer 62 is damaged. On the other hand, if a temporary adhesive with low adhesiveness among the conventional temporary adhesives is used, the temporary support of the device wafer can be easily released, but after all, the temporary adhesion between the device wafer and the support is too weak, which is easy There is a problem that the device wafer cannot be reliably supported by the support.

相對於此,本發明的積層體可表現出充分的接著性,且可容易地解除元件晶圓60與支持體的暫時接著。即,若利用本發明的積層體,則可藉由高的接著力將元件晶圓60暫時接著,且可不對薄型元件晶圓60a造成損傷而容易地解除對薄型元件晶圓60a的暫時接著。In contrast, the laminate of the present invention can exhibit sufficient adhesiveness, and the temporary adhesion between the element wafer 60 and the support can be easily released. That is, if the laminated body of the present invention is used, the element wafer 60 can be temporarily bonded with high adhesive force, and the temporary adhesion to the thin element wafer 60a can be easily released without damaging the thin element wafer 60a.

本發明的半導體裝置的製造方法並不限定於所述實施形態,可進行適當的變形、改良等。 另外,於所述實施形態中,接著層可為單層結構,接著層亦可為多層結構。 另外,於所述實施形態中,作為元件晶圓,可列舉矽基板,但並不限定於此,可為能夠於半導體裝置的製造方法中供至機械性或化學性處理的任意的被處理構件。例如,亦可列舉化合物半導體基板,作為化合物半導體基板的具體例,可列舉:SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板、及GaN基板等。 而且,於所述實施形態中,作為對元件晶圓(矽基板)的機械性或化學性處理,可列舉元件晶圓的薄膜化處理、及矽貫通電極的形成處理,但並不限定於該些,亦可列舉在半導體裝置的製造方法中所需的任意處理。 除此以外,於所述實施形態中所例示的元件晶圓中的元件晶片的形狀、尺寸、數目、配置位置等為任意,並無限定。The manufacturing method of the semiconductor device of the present invention is not limited to the above-mentioned embodiment, and may be appropriately modified, improved, and the like. In addition, in the above-mentioned embodiment, the adhesive layer may have a single-layer structure, and the adhesive layer may also have a multi-layer structure. In addition, in the above-mentioned embodiment, as the element wafer, there is a silicon substrate, but it is not limited to this, and it may be any member to be processed that can be subjected to mechanical or chemical processing in the manufacturing method of a semiconductor device. . For example, compound semiconductor substrates can also be cited. Specific examples of compound semiconductor substrates include SiC substrates, SiGe substrates, ZnS substrates, ZnSe substrates, GaAs substrates, InP substrates, and GaN substrates. Furthermore, in the above-mentioned embodiment, as the mechanical or chemical treatment of the element wafer (silicon substrate), the thinning of the element wafer and the formation of silicon through-electrodes may be mentioned, but it is not limited to this These may also include any processing required in the method of manufacturing a semiconductor device. In addition, the shape, size, number, arrangement position, etc. of the element wafers in the element wafers exemplified in the above-mentioned embodiment are arbitrary and not limited.

<套組> 其次,對本發明的套組進行說明。 本發明的套組具有:所述本發明的暫時接著劑;及第2接著劑,包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,且與所述暫時接著劑的組成不同。第2接著劑較佳為包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。進而,第2接著劑中,於25℃下為液體狀且含有矽原子的化合物的含量較佳為暫時接著劑中所含的於25℃下為液體狀且含有矽原子的化合物的含量的10質量%以下。另外,本發明中的第2接著劑較佳為包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。藉由設為此種構成,可更有效地抑制晶圓的翹曲。 第2接著劑中的彈性體X及彈性體Y、以及其調配比例與本發明的暫時接著劑中所述者為相同含義,較佳範圍亦相同。另外,亦可於第2接著劑中調配本發明的暫時接著劑中所述的各種添加劑等。該些的調配量等亦較佳為本發明的暫時接著劑中所述的範圍。 本發明的套組較佳為進一步具有基材及支持體。作為基材及支持體,可列舉所述積層體中所說明的基材及支持體,可使用該些基材及支持體。 藉由進一步具有基材及支持體,可製造於基材與支持體之間具有包含本發明的暫時接著劑的第1接著層、及所述第2接著層的積層體。 [實施例]<Set> Next, the set of the present invention will be described. The set of the present invention has: the temporary adhesive of the present invention; and a second adhesive including the elasticity of containing repeating units derived from styrene in a ratio of 50% by mass to 95% by mass in all repeating units Body X, and has a different composition from the temporary adhesive. The second adhesive preferably contains elastomer X containing styrene-derived repeating units in a ratio of 50% by mass or more and 95% by mass or less in all repeating units. Furthermore, in the second adhesive, the content of the compound that is liquid at 25° C. and contains silicon atoms is preferably 10% of the content of the compound that is liquid at 25° C. and contains silicon atoms contained in the temporary adhesive. Less than mass%. In addition, the second adhesive in the present invention preferably includes elastomer Y containing styrene-derived repeating units in a ratio of 10% by mass or more and less than 50% by mass in all repeating units. With such a configuration, the warpage of the wafer can be more effectively suppressed. The elastomer X and the elastomer Y in the second adhesive agent, and the blending ratio thereof have the same meanings as those described in the temporary adhesive agent of the present invention, and the preferred ranges are also the same. In addition, various additives and the like described in the temporary adhesive of the present invention may be blended in the second adhesive. These compounding amounts and the like are also preferably within the range described in the temporary adhesive of the present invention. The kit of the present invention preferably further has a substrate and a support. As the base material and the support, the base material and the support described in the above-mentioned laminate can be mentioned, and these base materials and the support can be used. By further having a substrate and a support, a laminate having the first adhesive layer containing the temporary adhesive of the present invention and the second adhesive layer between the substrate and the support can be produced. [Example]

以下,藉由實施例對本發明進一步進行具體說明,只要不超出本發明的主旨,則本發明並不限定於以下的實施例。再者,只要無特別說明,則「份」、「%」為質量基準。 另外,將丙二醇-1-甲醚乙酸酯記述為「PGMEA」。Hereinafter, the present invention will be further described in detail with examples. As long as the gist of the present invention is not exceeded, the present invention is not limited to the following examples. In addition, unless otherwise specified, "parts" and "%" are quality standards. In addition, propylene glycol-1-methyl ether acetate is described as "PGMEA".

本實施例中使用以下的材料。 [A成分] (a-1)KP-323(信越化學(股)製造) (a-2)KP-326(信越化學(股)製造) (a-3)KP-341(信越化學(股)製造) (a-4)KP-360A(信越化學(股)製造) (a-5)KP-361(信越化學(股)製造) (a-6)KP-354(信越化學(股)製造) (a-7)KP-356(信越化學(股)製造) (a-8)KP-358(信越化學(股)製造) (a-9)畢克(BYK)333(畢克化學(BYK-Chemie)公司製造) (a-10)珀利弗洛(Polyflow)KL-700(共榮社化學(股)製造) (a-11)迪高潤濕劑(TEGO WET)270(日本贏創德固賽(Evonik Degussa Japan)(股)製造) (a-12)SH28PA(東麗道康寧(Toray Dow Corning)(股)製造) (a-13)NBX-15(奈奧斯(NEOS)(股)製造) (Ra-1)KR220L(矽酮樹脂固體,信越化學(股)製造) (Ra-2)1-十二烯(烴系油,東京化成工業(股)製造) (a-1)~(a-13)的25℃下的黏度為10 mPa·s~20,000 mPa·s的範圍內。The following materials were used in this example. [Component A] (a-1) KP-323 (manufactured by Shin-Etsu Chemical Co., Ltd.) (a-2) KP-326 (manufactured by Shin-Etsu Chemical Co., Ltd.) (a-3) KP-341 (Shin-Etsu Chemical Co., Ltd.) Manufacturing) (a-4) KP-360A (manufactured by Shin-Etsu Chemical Co., Ltd.) (a-5) KP-361 (manufactured by Shin-Etsu Chemical Co., Ltd.) (a-6) KP-354 (manufactured by Shin-Etsu Chemical Co., Ltd.) (A-7) KP-356 (manufactured by Shin-Etsu Chemical Co., Ltd.) (a-8) KP-358 (manufactured by Shin-Etsu Chemical Co., Ltd.) (a-9) BYK 333 (BYK- (Manufactured by Chemie) (a-10) Polyflow KL-700 (manufactured by Kyoeisha Chemical Co., Ltd.) (a-11) TEGO WET 270 (Japan Evonik (Manufactured by Evonik Degussa Japan (share)) (a-12) SH28PA (manufactured by Toray Dow Corning (share)) (a-13) NBX-15 (NEOS (share)) Manufacturing) (Ra-1) KR220L (silicone resin solid, manufactured by Shin-Etsu Chemical Co., Ltd.) (Ra-2) 1-Dodecene (hydrocarbon-based oil, manufactured by Tokyo Chemical Industry Co., Ltd.) (a-1)~ (A-13) The viscosity at 25°C is in the range of 10 mPa·s to 20,000 mPa·s.

[B成分] (b-1):賽普頓(Septon)2104(氫化聚苯乙烯系彈性體、苯乙烯含有率=65質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、Mw=5萬以上且小於10萬、硬度(A型硬度計)=98、可樂麗(Kuraray)(股)製造) (b-2):塔夫泰科(Tuftec)P2000(氫化聚苯乙烯系彈性體、苯乙烯含有率=67質量%、不飽和雙鍵量=0.5 mmol/g以上且小於5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、Mw=5萬以上且小於10萬、硬度(A型硬度計)=90以上、旭化成(股)製造) (b-3):賽普頓(Septon)8104(氫化聚苯乙烯系彈性體、苯乙烯含有率=60質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=350℃以上且小於400℃、硬度(A型硬度計)=98、可樂麗(Kuraray)(股)製造) (b-4):科騰(Kraton)A1535(氫化聚苯乙烯系彈性體、苯乙烯含有率=58質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、硬度(A型硬度計)=83、科騰(Kraton)公司製造)[Component B] (b-1): Septon 2104 (hydrogenated polystyrene elastomer, styrene content = 65% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% heat Mass reduction temperature = 400°C or more and less than 450°C, Mw = 50,000 or more and less than 100,000, hardness (Type A hardness tester) = 98, manufactured by Kuraray (stock)) (b-2): TAFF Tyco (Tuftec) P2000 (hydrogenated polystyrene elastomer, styrene content = 67% by mass, unsaturated double bond content = 0.5 mmol/g or more and less than 5 mmol/g, 5% thermal mass reduction temperature = 400 ℃ or more and less than 450℃, Mw=50,000 or more and less than 100,000, hardness (Type A hardness tester)=90 or more, manufactured by Asahi Kasei Co., Ltd.) (b-3): Septon 8104 (hydrogenated polymer Styrene elastomer, styrene content = 60% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% thermal mass reduction temperature = 350°C or more and less than 400°C, hardness (Type A hardness meter) = 98. Kuraray (Stock) Manufacturing) (b-4): Kraton A1535 (hydrogenated polystyrene elastomer, styrene content = 58% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% thermal mass reduction temperature = above 400°C and less than 450°C, hardness (Type A hardness tester) = 83, manufactured by Kraton Company)

(b-5):賽普頓(Septon)2002(氫化聚苯乙烯系彈性體、苯乙烯含有率=30質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=350℃以上且小於400℃、Mw=5萬以上且小於10萬、硬度(A型硬度計)=80、可樂麗(Kuraray)(股)製造) (b-6):賽普頓(Septon)4033(氫化聚苯乙烯系彈性體、苯乙烯含有率=30質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、硬度(A型硬度計)=76、可樂麗(Kuraray)(股)製造) (b-7):科騰(Kraton)G1650(氫化聚苯乙烯系彈性體、苯乙烯含有率=30質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、硬度(A型硬度計)=70、科騰(Kraton)公司製造) (b-8):賽普頓(Septon)8004(氫化聚苯乙烯系彈性體、苯乙烯含有率=31質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、Mw=5萬以上且小於10萬、硬度(A型硬度計)=80、可樂麗(Kuraray)(股)製造) (b-9):賽普頓(Septon)8007(氫化聚苯乙烯系彈性體、苯乙烯含有率=30質量%、不飽和雙鍵量=小於0.5 mmol/g、5%熱質量減少溫度=400℃以上且小於450℃、Mw=5萬以上且小於10萬、硬度(A型硬度計)=77、可樂麗(Kuraray)(股)製造) (b-10):SIS5200P(非氫化聚苯乙烯系彈性體、苯乙烯含有率=15質量%、不飽和雙鍵量=5 mmol/g以上且小於15 mmol/g、5%熱質量減少溫度=250℃以上且小於350℃、Mw=10萬以上且小於20萬、JSR(股)製造)(B-5): Septon 2002 (Hydrogenated polystyrene elastomer, styrene content = 30% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% thermal mass reduction temperature = 350°C or more and less than 400°C, Mw=50,000 or more and less than 100,000, hardness (Type A hardness tester)=80, manufactured by Kuraray (stock)) (b-6): Septon 4033 (Hydrogenated polystyrene elastomer, styrene content = 30% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% thermal mass reduction temperature = more than 400°C and less than 450°C, hardness (Type A Hardness tester = 76, manufactured by Kuraray (stock) (b-7): Kraton G1650 (hydrogenated polystyrene elastomer, styrene content = 30% by mass, unsaturated double bond Quantity = less than 0.5 mmol/g, 5% thermal mass reduction temperature = above 400°C and less than 450°C, hardness (Type A hardness tester) = 70, manufactured by Kraton company) (b-8): Septon (Septon) 8004 (Hydrogenated polystyrene elastomer, styrene content = 31% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% thermal mass reduction temperature = more than 400°C and less than 450°C, Mw = 50,000 or more and less than 100,000, hardness (Type A durometer) = 80, manufactured by Kuraray (stock) (b-9): Septon 8007 (hydrogenated polystyrene elastomer) , Styrene content = 30% by mass, unsaturated double bond content = less than 0.5 mmol/g, 5% thermal mass reduction temperature = 400 ℃ or more and less than 450 ℃, Mw = 50,000 or more and less than 100,000, hardness (A Type Hardness Tester) = 77, Kuraray (Stock) Manufacturing) (b-10): SIS5200P (non-hydrogenated polystyrene elastomer, styrene content = 15% by mass, unsaturated double bond content = 5 mmol/g or more and less than 15 mmol/g, 5% thermal mass reduction temperature=250°C or more and less than 350°C, Mw=100,000 or more and less than 200,000, manufactured by JSR (shares))

(Rb-1):RB810(聚丁二烯系彈性體、不飽和雙鍵量為15 mmol/g以上、5%熱質量減少溫度=100℃以上且小於250℃、Mw=20萬以上且小於30萬、JSR(股)製造) (Rb-2):瑞諾斯(ZEONEX)480R(日本瑞翁(ZEON)製造的環烯烴系聚合物) (Rb-3):杜里米德(Durimide)(註冊商標)284(富士軟片(Fujifilm)製造的聚醯亞胺) (Rb-4):PCZ300(三菱氣體化學公司製造的聚碳酸酯) (Rb-5):海特魯(Hytrel)7247(聚酯系彈性體、5%熱質量減少溫度=383℃、硬度(A型硬度計)=90以上、杜邦-東麗(Du Pont-Toray)公司製造) (Rb-6):普瑪路易(Primalloy)CP300(聚酯系彈性體、5%熱質量減少溫度=399℃、硬度(A型硬度計)=90以上、三菱化學公司製造)(Rb-1): RB810 (polybutadiene elastomer, unsaturated double bond content of 15 mmol/g or more, 5% thermal mass reduction temperature = 100°C or more and less than 250°C, Mw=200,000 or more and less than 300,000. JSR (Stock) Manufacturing) (Rb-2): ZEONEX 480R (Cycloolefin polymer manufactured by ZEON) (Rb-3): Durimide (Registered trademark) 284 (polyimide manufactured by Fujifilm) (Rb-4): PCZ300 (polycarbonate manufactured by Mitsubishi Gas Chemical Corporation) (Rb-5): Hytrel 7247 ( Polyester elastomer, 5% thermal mass reduction temperature = 383°C, hardness (Type A durometer) = 90 or more, manufactured by Du Pont-Toray (Rb-6): Prima Louis ( Primalloy) CP300 (polyester elastomer, 5% thermal mass reduction temperature = 399°C, hardness (Type A durometer) = 90 or more, manufactured by Mitsubishi Chemical Corporation)

不飽和雙鍵量為藉由NMR測定而算出的值。 5%熱質量減少溫度為利用熱重量測定裝置(TGA),於氮氣流下,自25℃以20℃/min進行昇溫的條件下對測定開始時質量減少5%的溫度進行測定而得的值。The amount of unsaturated double bonds is a value calculated by NMR measurement. The 5% thermal mass reduction temperature is a value obtained by measuring the temperature at which the mass is reduced by 5% at the start of the measurement under the condition of increasing the temperature at 20°C/min from 25°C under a nitrogen flow using a thermogravimetry device (TGA).

[試驗例1] <接著性支持體1的形成> 將接著層形成用塗佈液1旋轉塗佈於直徑為100 mm、厚度為525 μm的Si晶圓(支持體晶圓)上,之後以110℃烘烤1分鐘,進而以190℃烘烤4分鐘,藉此製作具有接著層的接著性支持體1。[Test Example 1] <Formation of Adhesive Support 1> The coating solution 1 for forming an adhesive layer was spin-coated on a Si wafer (support wafer) with a diameter of 100 mm and a thickness of 525 μm, and then Baked at 110°C for 1 minute, and further baked at 190°C for 4 minutes, thereby producing an adhesive support 1 having an adhesive layer.

<接著層形成用塗佈液1的組成> ·A成分:表1中記載的A成分、表1中所示的質量份 ·B成分:表1中記載的B成分、表1中所示的質量份 ·易璐諾斯(Irganox)1010(巴斯夫(BASF)(股)製造):                                                                                  0.9質量份 ·蘇米萊澤(Sumilizer)TP-D(住友化學(股)製造):                                                                                    0.9質量份 ·溶劑:表1中記載的溶劑、表1中所示的質量份<Composition of Coating Liquid 1 for Adhesive Layer Formation> · A component: A component described in Table 1, and a mass part shown in Table 1 · B component: a B component described in Table 1, which is shown in Table 1 Yi Lu Nuosi parts by mass · (Irganox) 1010 (BASF (BASF) (shares) Ltd.): 0.9 parts by mass Sumi Leiser (Sumilizer) TP-D (manufactured by Sumitomo chemical (shares) Ltd.): 0.9 parts by mass solvent : Solvents listed in Table 1, parts by mass shown in Table 1

<試驗片的製作> 於真空下,以190℃、0.11 MPa的壓力對接著性支持體1的形成有接著層側的面、與直徑為100 mm、厚度為525 μm、高度為10 μm的帶Cu製凸塊的Si晶圓(元件晶圓)的元件面進行3分鐘壓接,而製作試驗片。<Preparation of the test piece> Under vacuum, the surface of the adhesive support 1 on the side where the adhesive layer is formed, and a tape with a diameter of 100 mm, a thickness of 525 μm, and a height of 10 μm were applied to the adhesive support 1 at a pressure of 190°C and 0.11 MPa. The device surface of the Si wafer (device wafer) made of Cu bumps was crimped for 3 minutes to produce a test piece.

<接著性> 使用拉伸試驗機(今田(IMADA)(股)製造的數位測力器,型式:ZP-50N),以250 mm/min的條件於沿著接著層的面的方向進行拉伸測定,藉由以下基準來評價試驗片的剪切接著力。 A:50 N以上的接著力 B:10 N以上且小於50 N的接著力 C:小於10 N的接著力<Adhesion> Use a tensile testing machine (digital force gauge manufactured by IMADA (stock), type: ZP-50N), and stretch at 250 mm/min in the direction along the surface of the adhesive layer In the measurement, the shear adhesive force of the test piece was evaluated based on the following criteria. A: Adhesive force of 50 N or more B: Adhesive force of 10 N or more and less than 50 N C: Adhesive force of less than 10 N

<剝離性> 將試驗片與切割框一同安放於切割膠帶安裝機的中央,自上方配置切割膠帶。於真空下,藉由輥將試驗片與切割膠帶固定,於切割框上對切割膠帶進行切割,於切割膠帶上安裝試驗片。 於25℃下,以50 mm/min的條件將試驗片向相對於接著層的面為垂直的方向(90°方向)拉伸,藉由以下基準來評價剝離性。另外,將所製作的試驗片在250℃下加熱30分鐘後,於25℃下,在50 mm/min的條件下將試驗片向接著層的垂直方向拉伸,確認熱製程後的剝離性,藉由以下基準進行評價。再者,藉由目視確認Si晶圓有無破損。 A:最大剝離力小於12 N、可剝離。 B:最大剝離力為12 N以上且小於16 N、可剝離。 C:最大剝離力為16 N以上且小於20 N、可剝離。 D:最大剝離力為20 N以上且小於25 N、可剝離。 E:最大剝離力為25 N以上或Si晶圓破損。<Releasability> Place the test piece together with the dicing frame in the center of the dicing tape mounting machine, and arrange the dicing tape from above. Under vacuum, the test piece and the dicing tape are fixed by a roller, the dicing tape is cut on the dicing frame, and the test piece is installed on the dicing tape. The test piece was stretched in a direction (90° direction) perpendicular to the surface of the adhesive layer under a condition of 50 mm/min at 25° C., and the peelability was evaluated based on the following criteria. In addition, after heating the produced test piece at 250°C for 30 minutes, the test piece was stretched in the direction perpendicular to the adhesive layer under the condition of 50 mm/min at 25°C to confirm the peelability after the thermal process. The evaluation is based on the following criteria. Furthermore, it was visually confirmed whether the Si wafer was damaged. A: The maximum peeling force is less than 12 N, and it is peelable. B: The maximum peeling force is 12 N or more and less than 16 N, which is peelable. C: The maximum peeling force is 16 N or more and less than 20 N, which is peelable. D: The maximum peeling force is 20 N or more and less than 25 N, and it is peelable. E: The maximum peeling force is 25 N or more or the Si wafer is broken.

<去除性(溶解去除)> 使剝離性試驗結束後的帶接著層的Si晶圓(元件晶圓)的接著層朝上並安放於旋轉塗佈機上,使用與下述表1中記載的接著層形成用塗佈液的溶劑相同的溶劑作為清洗溶劑,並進行5分鐘噴霧。進而,僅於在5分鐘噴霧中未使用均三甲苯的比較例5、比較例6、比較例7中,藉由一邊使Si晶圓旋轉一邊噴霧異丙醇(Isopropanol,IPA)而進行淋洗。進而,進行旋轉乾燥。其後,觀察外觀並藉由目視來檢查所殘存的接著層的有無、以及藉由X射線光電子分光法來檢查Si晶圓表面的碳原子量,藉由以下基準進行評價。<Removability (dissolution removal)> After the peeling test, the Si wafer with an adhesive layer (component wafer) was placed on the spin coater with the adhesive layer facing up, and the following table 1 was used. Then, the same solvent as the solvent of the coating liquid for layer formation was used as a cleaning solvent, and spraying was performed for 5 minutes. Furthermore, only in Comparative Example 5, Comparative Example 6, and Comparative Example 7 in which mesitylene was not used for spraying for 5 minutes, the rinsing was performed by spraying isopropanol (IPA) while rotating the Si wafer . Furthermore, spin drying is performed. After that, the appearance was observed, the presence or absence of the remaining adhesive layer was visually inspected, and the carbon atom content of the Si wafer surface was inspected by X-ray photoelectron spectroscopy, and the evaluation was performed based on the following criteria.

<<X射線光電子分光法的測定方法>> 測定裝置使用PHI Quantera SXM(愛科發物理電子(ULVAC-PHI)公司製造),對晶圓的基材面1400 μm´700 μm的分析面積範圍照射25 W經單色化的AlKα射線並以射出角度45°進行檢測而測定碳原子的存在比率(atm%)。測定溫度為25℃,測定壓力為10-8 Pa以下。 再者,所謂晶圓的基材面的面積,於基材面的表面有凹凸的情況下,亦是指假定其凹凸部不存在時的基材的表面的面積。 根據以下的評價區分進行評價。 A:ESCA測定的結果為碳原子的存在比率小於1%。 B:ESCA測定的結果為碳原子的存在比率為1%以上且小於3%。 C:ESCA測定的結果為碳原子的存在比率為3%以上。<<Measurement method of X-ray photoelectron spectroscopy>> The measuring device uses PHI Quantera SXM (manufactured by ULVAC-PHI) to irradiate the substrate surface of the wafer with an analysis area of 1400 μm´700 μm 25 W monochromatic AlKα rays are detected at an emission angle of 45° to measure the abundance ratio (atm%) of carbon atoms. The measurement temperature is 25°C, and the measurement pressure is 10 -8 Pa or less. In addition, the area of the substrate surface of the wafer, when there are irregularities on the surface of the substrate surface, also refers to the area of the surface of the substrate assuming that the irregularities are not present. Evaluation is performed according to the following evaluation categories. A: The result of ESCA measurement is that the abundance ratio of carbon atoms is less than 1%. B: As a result of the ESCA measurement, the abundance ratio of carbon atoms is 1% or more and less than 3%. C: As a result of ESCA measurement, the abundance ratio of carbon atoms is 3% or more.

<去除性(膜去除)> 於25℃下,將剝離性試驗結束後的帶接著層的Si晶圓(元件晶圓)固定以使其無法移動,將剝離用膠帶(琳得科(Lintec)股份有限公司製造)貼附於帶接著層的Si晶圓上的接著層,將剝離用膠帶向相對於接著層為垂直的方向拉伸,以50 mm/min的速度將接著層向90°方向拉起,自Si晶圓(元件晶圓)的元件面以膜狀剝離接著層。其後,觀察外觀並藉由目視來檢查Si晶圓上所殘存的接著層的剝離殘渣的有無,藉由以下基準進行評價。 A:能夠以4 N/cm以下的剝離強度、不發生斷裂地以膜狀去除接著層,未確認到接著層的剝離殘渣。 B:能夠以超過4 N/cm的剝離強度、不發生斷裂地以膜狀去除接著層,未確認到接著層的剝離殘渣。 C:不符合所述A及B的任一者(剝離途中發生斷裂)。<Removability (film removal)> At 25°C, the Si wafer (component wafer) with the adhesive layer after the peelability test is fixed so that it cannot move, and the peeling tape (Lintec) Co., Ltd.) The adhesive layer is attached to the Si wafer with the adhesive layer, and the peeling tape is stretched in a direction perpendicular to the adhesive layer, and the adhesive layer is moved to the 90° direction at a speed of 50 mm/min. Pull up, and peel off the adhesive layer in a film form from the device surface of the Si wafer (device wafer). After that, the appearance was observed and the presence or absence of peeling residues of the adhesive layer remaining on the Si wafer was visually inspected, and the evaluation was performed according to the following criteria. A: The adhesive layer can be removed in a film form with a peel strength of 4 N/cm or less without breaking, and no peeling residue of the adhesive layer is confirmed. B: The adhesive layer can be removed in a film form with a peel strength exceeding 4 N/cm without breaking, and no peeling residue of the adhesive layer is confirmed. C: It does not meet either of the above-mentioned A and B (fracture occurred during peeling).

<晶圓翹曲> 將所製作的試驗片的元件晶圓的不與接著層接觸側的面研磨至元件晶圓的厚度成為35 μm的厚度為止,之後使用科磊(KLA-Tencor)公司製造的FLX-2320,將昇溫速度及降溫速度設定為10℃/min,自室溫加熱至200℃後,冷卻至25℃,並測定Bow值(翹曲的大小)。 A:Bow值為40 μm以下 B:Bow值超過40 μm且小於80 μm C:Bow值为80 μm以上且小於200 μm D:Bow值為200 μm以上<Wafer warpage> The surface of the component wafer of the produced test piece that is not in contact with the adhesive layer is polished until the thickness of the component wafer becomes 35 μm, and then manufactured by KLA-Tencor For FLX-2320, set the heating rate and cooling rate to 10°C/min. After heating from room temperature to 200°C, it is cooled to 25°C, and the Bow value (the magnitude of warpage) is measured. A: Bow value is 40 μm or less B: Bow value is more than 40 μm and less than 80 μm C: Bow value is 80 μm or more and less than 200 μm D: Bow value is 200 μm or more

[表1]

Figure 105116944-A0304-0001
[Table 1]
Figure 105116944-A0304-0001

根據所述結果而明確,於使用本發明的暫時接著劑的情況下,接著性及常溫剝離性良好。進而,加熱後的剝離性、接著層的去除性良好,晶圓的翹曲得到抑制。 另外,倂用了所述彈性體X與彈性體Y作為彈性體的實施例的晶圓的翹曲更有效地得到抑制。From the above results, it is clear that when the temporary adhesive of the present invention is used, the adhesiveness and room temperature peeling properties are good. Furthermore, the releasability after heating and the removability of the adhesive layer are good, and the warpage of the wafer is suppressed. In addition, the warpage of the wafer of the example in which the elastic body X and the elastic body Y are used as the elastic body is more effectively suppressed.

[試驗例2] <接著性支持體2的形成> 將接著層形成用塗佈液2旋轉塗佈於直徑為100 mm、厚度為525 μm的Si晶圓(支持體晶圓)上,之後以110℃烘烤1分鐘,進而以190℃烘烤4分鐘,藉此製作具有接著層的接著性支持體2。 另外,將接著層形成用塗佈液3旋轉塗佈於直徑為100 mm、厚度為525 μm、高度為10 μm的帶Cu製凸塊的Si晶圓(元件晶圓)上,之後以110℃烘烤1分鐘,進而以190℃烘烤4分鐘,藉此製作具有接著層的接著性基材。[Experimental Example 2] <Formation of Adhesive Support 2> The coating liquid 2 for forming an adhesive layer was spin-coated on a Si wafer (support wafer) with a diameter of 100 mm and a thickness of 525 μm. Baked at 110°C for 1 minute, and further baked at 190°C for 4 minutes, thereby fabricating an adhesive support 2 having an adhesive layer. In addition, the coating solution 3 for forming an adhesive layer was spin-coated on a Si wafer (element wafer) with Cu bumps with a diameter of 100 mm, a thickness of 525 μm, and a height of 10 μm, and then heated at 110°C. Bake for 1 minute, and further bake at 190°C for 4 minutes, thereby fabricating an adhesive substrate with an adhesive layer.

<接著層形成用塗佈液2、接著層形成用塗佈液3的組成> ·A成分:表2中記載的A成分、表2中所示的質量份 ·B成分:表2中記載的B成分、表2中所示的質量份 ·易璐諾斯(Irganox)1010(巴斯夫(BASF)(股)製造):                                                                                  0.9質量份 ·蘇米萊澤(Sumilizer)TP-D(住友化學(股)製造):                                                                                    0.9質量份 ·均三甲苯:30質量份<Composition of Adhesive Layer Formation Coating Liquid 2 and Adhesive Layer Formation Coating Liquid 3> · A component: A component described in Table 2, a mass part shown in Table 2 · B component: A component described in Table 2 Component B, quality as shown in Table 2, Irganox 1010 (Summer Chemical) (Summer Chemical) (Sumizumi) (BASF) (manufactured by BASF): )Manufacturing: Quality: 30 copies of toluene: 0.9 quality copies

<試驗片的製作> 於真空下,以190℃、0.11 MPa的壓力對接著性支持體2的形成有接著層側的面、與接著性基材的形成有接著層的面進行3分鐘壓接,而製作試驗片。<Preparation of the test piece> Under vacuum, pressure bonding was performed on the surface of the adhesive support 2 on the side where the adhesive layer was formed and the surface of the adhesive base material where the adhesive layer was formed at 190°C and 0.11 MPa for 3 minutes. , And make a test piece.

<接著性> 藉由與試驗例1中的接著性評價相同的方法及基準評價接著性。 <嵌入性> 對試驗片使用C-SAM(超音波顯微鏡),確認貼合後的接著層(包含接著層彼此的界面、接著層與基材的接合面、以及接著層與支持體的接合面)中有無空隙。 A:未產生空隙。 B:可確認到一個以上且五個以下的直徑為10 μm以下的小空隙,但無實際損害。 C:可確認到超過五個且小於十個的直徑為10 μm以下的小空隙,但無實際損害。 D:產生十個以上直徑超過10 μm的空隙,有實際損害。 <剝離性> 藉由與試驗例1中的剝離性評價相同的方法及基準評價剝離性。 <去除性(溶解去除)> 藉由與試驗例1中的去除性(溶解去除)相同的方法及基準評價去除性(溶解去除)。 <去除性(膜去除)> 藉由與試驗例1中的去除性(膜去除)相同的方法及基準評價去除性(膜去除)。 <晶圓翹曲> 藉由與試驗例1中的晶圓翹曲相同的方法及基準評價晶圓翹曲。<Adhesiveness> The adhesiveness was evaluated by the same method and criteria as the adhesiveness evaluation in Test Example 1. <Embedding property> Using C-SAM (ultrasonic microscope) on the test piece, confirm the bonding layer (including the interface between the bonding layers, the bonding surface between the bonding layer and the substrate, and the bonding surface between the bonding layer and the support ) Is there any gap in it. A: No voids are generated. B: One or more and five or less small voids with a diameter of 10 μm or less can be confirmed, but there is no actual damage. C: More than five and less than ten small voids with a diameter of 10 μm or less can be confirmed, but there is no actual damage. D: Ten or more voids with a diameter exceeding 10 μm are generated, and there is actual damage. <Peelability> The peelability was evaluated by the same method and criteria as the peelability evaluation in Test Example 1. <Removability (dissolution removal)> The removal performance (dissolution removal) was evaluated by the same method and criteria as the removal performance (dissolution removal) in Test Example 1. <Removability (film removal)> The removability (film removal) was evaluated by the same method and criteria as the removability (film removal) in Test Example 1. <Wafer warpage> The wafer warpage was evaluated by the same method and criteria as the wafer warpage in Test Example 1.

[表2]

Figure 105116944-A0304-0002
[Table 2]
Figure 105116944-A0304-0002

根據所述結果而明確,於使用本發明的暫時接著劑的情況下,接著性及常溫剝離性良好。進而,加熱後的剝離性、接著層的去除性良好。 另外,倂用了所述彈性體X與彈性體Y作為彈性體的實施例的晶圓的翹曲更有效地得到抑制。 另外,於塗佈於支持體側與元件側兩者的情況(實施例34~實施例41)下,嵌入性良好。From the above results, it is clear that when the temporary adhesive of the present invention is used, the adhesiveness and room temperature peeling properties are good. Furthermore, the releasability after heating and the removability of the adhesive layer are good. In addition, the warpage of the wafer of the example in which the elastic body X and the elastic body Y are used as the elastic body is more effectively suppressed. In addition, when applied to both the support side and the element side (Example 34 to Example 41), the embedding property was good.

[試驗例3] <接著膜的製作方法> 藉由線棒以速度1 m/min的速度將實施例42~實施例50及比較例12~比較例15、比較例18~比較例21的接著膜形成用組成物塗敷於厚度為75 μm的脫膜聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)膜上,於140℃下乾燥10分鐘,藉此製作膜厚為100 μm的接著膜。 於300℃下將比較例16、比較例17的接著膜形成用組成物溶融攪拌5分鐘,並自寬度100 μm的狹縫擠出,藉此製作接著膜(擠出成型片材)。[Experimental example 3] <Method for producing adhesive film> Example 42 to Example 50, Comparative Example 12 to Comparative Example 15, and Comparative Example 18 to Comparative Example 21 were adhered with a wire rod at a speed of 1 m/min The film-forming composition was coated on a 75 μm-thick release polyethylene terephthalate (PET) film, and dried at 140°C for 10 minutes to produce a 100 μm-thick adhesive membrane. The adhesive film forming composition of Comparative Example 16 and Comparative Example 17 was melted and stirred at 300° C. for 5 minutes, and then extruded from a slit having a width of 100 μm to produce an adhesive film (extruded sheet).

(接著膜形成用組成物的組成) ·A成分:表3中記載的A成分、表3中所示的質量份 ·B成分:表3中記載的B成分、表3中所示的質量份 ·溶劑:表3中記載的溶劑、表3中所示的質量份(Composition of the composition for film formation) · A component: A component described in Table 3, a part by mass shown in Table 3 · B component: a B component described in Table 3, a part by mass shown in Table 3 ·Solvent: Solvents listed in Table 3, parts by mass shown in Table 3

<試驗片的製作> 於真空下,以190℃、0.11 MPa的壓力對接著性支持體2的形成有接著層側的面、與直徑為100 mm的Si晶圓進行3分鐘壓接,而製作試驗片。<Preparation of the test piece> The surface of the adhesive support 2 on the side where the adhesive layer is formed and the Si wafer with a diameter of 100 mm were crimped under vacuum at 190°C and 0.11 MPa for 3 minutes to produce Test piece.

<接著性> 藉由與試驗例1中的接著性評價相同的方法及基準評價接著性。 <剝離性> 藉由與試驗例1中的剝離性評價相同的方法及基準評價剝離性。 <去除性(溶解去除)> 使剝離性試驗結束後的帶接著層的Si晶圓的接著層朝上並安放於旋轉塗佈機上,使用下述表3中記載的溶劑作為清洗溶劑,並對晶圓進行5分鐘噴霧。進而,進行旋轉乾燥。其後,觀察外觀並藉由目視來檢查所殘存的接著層的有無,藉由以下基準進行評價。 A:未確認到接著層的殘存 B:確認到接著層的殘存 <去除性(膜去除)> 藉由與試驗例1中的去除性(膜去除)相同的方法及基準評價去除性(膜去除)。 <晶圓翹曲> 藉由與試驗例1中的晶圓翹曲相同的方法及基準評價晶圓翹曲。<Adhesiveness> The adhesiveness was evaluated by the same method and criteria as the adhesiveness evaluation in Test Example 1. <Peelability> The peelability was evaluated by the same method and criteria as the peelability evaluation in Test Example 1. <Removability (dissolution removal)> After the peeling test, the Si wafer with the adhesive layer is placed on the spin coater with the adhesive layer facing up, and the solvent described in Table 3 below is used as the cleaning solvent, and Spray the wafer for 5 minutes. Furthermore, spin drying is performed. After that, the appearance was observed and the presence or absence of the remaining adhesive layer was checked visually, and the evaluation was performed according to the following criteria. A: Remaining of the adhesive layer is not confirmed B: Remains of the adhesive layer is confirmed <Removability (membrane removal)> The removability (membrane removal) was evaluated by the same method and criteria as the removability (membrane removal) in Test Example 1 . <Wafer warpage> The wafer warpage was evaluated by the same method and criteria as the wafer warpage in Test Example 1.

[表3]

Figure 105116944-A0305-02-0099-1
[table 3]
Figure 105116944-A0305-02-0099-1

根據所述結果而明確,於使用本發明的暫時接著劑的情況下,接著性及常溫剝離性良好。進而,加熱後的剝離性、接著層的去除性良好,晶圓的翹曲得到抑制。 另外,倂用了所述彈性體X與彈性體Y作為彈性體的實施例的晶圓的翹曲更有效地得到抑制。From the above results, it is clear that when the temporary adhesive of the present invention is used, the adhesiveness and room temperature peeling properties are good. Furthermore, the releasability after heating and the removability of the adhesive layer are good, and the warpage of the wafer is suppressed. In addition, the warpage of the wafer of the example in which the elastic body X and the elastic body Y are used as the elastic body is more effectively suppressed.

1‧‧‧基材 2、12‧‧‧支持體 3、3A、3B、11、11a~11d‧‧‧接著層 60‧‧‧元件晶圓 60a‧‧‧薄型元件晶圓 61‧‧‧矽基板 61a‧‧‧表面 61b、61b1‧‧‧背面 62‧‧‧元件晶片 63‧‧‧結構物 70‧‧‧膠帶 100、100a‧‧‧接著性支持體1‧‧‧Substrate 2.12‧‧‧Support 3. 3A, 3B, 11, 11a~11d‧‧‧Continuous layer 60‧‧‧Component Wafer 60a‧‧‧Thin component wafer 61‧‧‧Silicon substrate 61a‧‧‧surface 61b, 61b1‧‧‧Back 62‧‧‧Component chip 63‧‧‧Structure 70‧‧‧Tape 100, 100a‧‧‧Adhesive support

圖1為表示本發明的積層體的一實施形態的概略圖。 圖2為表示本發明的積層體的另一實施形態的概略圖。 圖3(A)~圖3(E)為表示半導體裝置的製造方法的第一實施形態的概略圖。 圖4(A)~圖4(E)為表示半導體裝置的製造方法的第二實施形態的概略圖。 圖5(A)~圖5(E)為表示半導體裝置的製造方法的第三實施形態的概略圖。 圖6是對先前的接著性支持體與元件晶圓的暫時接著狀態的解除進行說明的概略剖面圖。Fig. 1 is a schematic view showing an embodiment of the laminate of the present invention. Fig. 2 is a schematic view showing another embodiment of the laminate of the present invention. 3(A) to 3(E) are schematic diagrams showing a first embodiment of a method of manufacturing a semiconductor device. 4(A) to 4(E) are schematic diagrams showing a second embodiment of the method of manufacturing a semiconductor device. 5(A) to 5(E) are schematic diagrams showing a third embodiment of the method of manufacturing a semiconductor device. 6 is a schematic cross-sectional view for explaining the release of the temporary bonding state between the conventional adhesive support and the element wafer.

60a:薄型元件晶圓 60a: Thin component wafer

61:矽基板 61: Silicon substrate

61a:表面 61a: surface

61b1:背面 61b1: back

62:元件晶片 62: Component wafer

Claims (22)

一種暫時接著劑,其含有:於25℃下為液體狀且含有矽原子的化合物;以及彈性體,含有於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,所述彈性體X的依據日本工業標準K6253的方法並利用A型硬度計進行測定而得的硬度為83以上,相對於所述暫時接著劑中的彈性體的合計量,所述含有矽原子的化合物的含量為0.2質量%以上且小於2.5質量%,相對於除了溶劑以外的暫時接著劑的質量,所述暫時接著劑中的彈性體的含量為50.00質量%~99.99質量%,所述暫時接著劑中所含的彈性體的至少一種的不飽和雙鍵量小於15mmol/g,所述暫時接著劑中所含的彈性體的至少一種自25℃以20℃/min昇溫的5%熱質量減少溫度為250℃以上,所述含有矽原子的化合物為下述式所表示的化合物:
Figure 105116944-A0305-02-0101-2
式中,R1及R2分別獨立地表示直鏈或分支的烷基、環烷基、芳香族基或包含聚醚鏈的有機基,L1表示-O-或者包含聚醚鏈的連結基。
A temporary adhesive, which contains: a compound that is liquid at 25°C and contains silicon atoms; and an elastomer containing a styrene-derived compound in a proportion of 50% by mass or more and 95% by mass or less in all repeating units The elastomer X of the repeating unit has a hardness of 83 or more based on the method of Japanese Industrial Standard K6253 and measured with a type A durometer, relative to the total amount of elastomer in the temporary adhesive The content of the silicon atom-containing compound is 0.2% by mass or more and less than 2.5% by mass, and the content of the elastomer in the temporary adhesive is 50.00% by mass to 99.99 relative to the mass of the temporary adhesive excluding the solvent % By mass, the amount of unsaturated double bonds of at least one of the elastomers contained in the temporary adhesive is less than 15 mmol/g, and at least one of the elastomers contained in the temporary adhesive is set at 20°C/min from 25°C The 5% thermal mass reduction temperature of the heating is 250°C or higher, and the compound containing silicon atoms is a compound represented by the following formula:
Figure 105116944-A0305-02-0101-2
In the formula, R 1 and R 2 each independently represent a linear or branched alkyl group, a cycloalkyl group, an aromatic group or an organic group containing a polyether chain, and L 1 represents -O- or a linking group containing a polyether chain .
如申請專利範圍第1項所述的暫時接著劑,其中所述含有矽原子的化合物的自25℃以20℃/min昇溫的10%熱質量減少溫度為250℃以上。 The temporary adhesive as described in item 1 of the scope of patent application, wherein the silicon atom-containing compound has a 10% thermal mass reduction temperature from 25°C at 20°C/min of 250°C or higher. 如申請專利範圍第1項或第2項所述的暫時接著劑,其進而包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。 The temporary adhesive as described in item 1 or item 2 of the scope of patent application, which further includes elastomer Y containing styrene-derived repeating units in a ratio of 10% by mass or more and less than 50% by mass in all repeating units . 如申請專利範圍第3項所述的暫時接著劑,其中所述彈性體X與所述彈性體Y的質量比為5:95~95:5。 The temporary adhesive as described in item 3 of the scope of patent application, wherein the mass ratio of the elastomer X to the elastomer Y is 5:95 to 95:5. 如申請專利範圍第1項或第2項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種的不飽和雙鍵量為7mmol/g以下。 The temporary adhesive as described in item 1 or item 2 of the scope of patent application, wherein the amount of unsaturated double bonds of at least one elastomer contained in the temporary adhesive is 7 mmol/g or less. 如申請專利範圍第1項或第2項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種為氫化物。 The temporary adhesive according to item 1 or item 2 of the scope of the patent application, wherein at least one of the elastomers contained in the temporary adhesive is a hydride. 如申請專利範圍第1項或第2項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種為嵌段共聚物。 The temporary adhesive according to item 1 or 2 of the scope of patent application, wherein at least one of the elastomers contained in the temporary adhesive is a block copolymer. 如申請專利範圍第1項或第2項所述的暫時接著劑,其中所述暫時接著劑中所含的彈性體的至少一種為單末端或兩末端是源自苯乙烯的嵌段共聚物。 The temporary adhesive agent according to the first or second item of the scope of the patent application, wherein at least one of the elastomers contained in the temporary adhesive agent is a block copolymer derived from styrene at one end or both ends. 如申請專利範圍第1項或第2項所述的暫時接著劑, 其中所述含有矽原子的化合物選自二甲基聚矽氧烷、甲基苯基聚矽氧烷、二苯基聚矽氧烷及聚醚改質聚矽氧烷。 Such as the temporary adhesive described in item 1 or item 2 of the scope of patent application, The silicon atom-containing compound is selected from dimethyl polysiloxane, methyl phenyl polysiloxane, diphenyl polysiloxane and polyether modified polysiloxane. 如申請專利範圍第1項或第2項所述的暫時接著劑,其進而包含抗氧化劑及溶劑的至少一者。 The temporary adhesive as described in item 1 or item 2 of the scope of the patent application further includes at least one of an antioxidant and a solvent. 如申請專利範圍第1項或第2項所述的暫時接著劑,其中所述暫時接著劑為半導體裝置製造用暫時接著劑。 The temporary adhesive as described in item 1 or item 2 of the scope of patent application, wherein the temporary adhesive is a temporary adhesive for semiconductor device manufacturing. 一種接著膜,其具有:包含如申請專利範圍第1項至第11項中任一項所述的暫時接著劑的接著層。 An adhesive film comprising: an adhesive layer containing the temporary adhesive according to any one of items 1 to 11 in the scope of the patent application. 一種接著性支持體,其具有:包含如申請專利範圍第1項至第11項中任一項所述的暫時接著劑的接著層、以及支持體。 An adhesive support having an adhesive layer containing the temporary adhesive described in any one of the scope of the patent application to any one of items 1 to 11, and a support. 一種積層體,其具有:支持體、包含如申請專利範圍第1項至第11項中任一項所述的暫時接著劑的接著層、以及基材。 A laminate having a support, an adhesive layer containing the temporary adhesive described in any one of items 1 to 11 in the scope of patent application, and a base material. 如申請專利範圍第14項所述的積層體,其中所述接著層位於所述支持體的表面,所述基材位於所述接著層的與所述支持體為相反側的表面。 The laminate according to claim 14, wherein the adhesive layer is located on the surface of the support, and the substrate is located on the surface of the adhesive layer on the opposite side of the support. 如申請專利範圍第14項所述的積層體,其中所述支持體、所述接著層、及所述基材以所述順序積層,且於所述支持體與所述接著層之間具有與所述接著層的組成不同的第2接著層。 The laminate according to claim 14, wherein the support, the adhesive layer, and the base material are layered in the order described, and between the support and the adhesive layer The second adhesive layer having a different composition. 如申請專利範圍第14項所述的積層體,其中所述支持體、所述接著層、及所述基材以所述順序積層,且於所述接著層與所述基材之間具有與所述接著層的組成不同的第2接著層。 The laminated body according to claim 14, wherein the support, the adhesive layer, and the base material are laminated in the stated order, and there is and between the adhesive layer and the base material. The second adhesive layer having a different composition. 如申請專利範圍第16項所述的積層體,其中所述第2接著層包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X。 The laminate according to claim 16, wherein the second adhesive layer includes an elastomer X containing repeating units derived from styrene in a ratio of 50% by mass or more and 95% by mass or less in all repeating units . 如申請專利範圍第16項所述的積層體,其中所述第2接著層包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y。 The laminate according to claim 16, wherein the second adhesive layer includes elastomer Y containing styrene-derived repeating units in a ratio of 10% by mass or more and less than 50% by mass in all repeating units . 如申請專利範圍第16項所述的積層體,其中所述第2接著層中的於25℃下為液體狀且含有矽原子的化合物的含量為所述接著層中所含的於25℃下為液體狀且含有矽原子的化合物的含量的10質量%以下。 The laminate according to claim 16, wherein the content of the compound that is liquid at 25°C and contains silicon atoms in the second adhesive layer is the amount contained in the adhesive layer at 25°C It is 10% by mass or less of the content of the compound containing silicon atoms in a liquid state. 如申請專利範圍第14項所述的積層體,其中所述基材為元件晶圓。 The laminated body according to the 14th patent application, wherein the substrate is a device wafer. 一種接著劑套組,其具有:如申請專利範圍第1項至第11項中任一項所述的暫時接著劑;以及第2接著劑,包含在所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,且與所述暫時接著劑的組成不同。 An adhesive kit comprising: a temporary adhesive as described in any one of items 1 to 11 in the scope of the patent application; and a second adhesive containing 50% by mass or more and 95% by mass in all repeating units The ratio of mass% or less contains elastomer X derived from a repeating unit of styrene, and is different from the composition of the temporary adhesive.
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