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TWI730366B - Multi-spectrum electromagnetic wave detection device - Google Patents

Multi-spectrum electromagnetic wave detection device Download PDF

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TWI730366B
TWI730366B TW108127584A TW108127584A TWI730366B TW I730366 B TWI730366 B TW I730366B TW 108127584 A TW108127584 A TW 108127584A TW 108127584 A TW108127584 A TW 108127584A TW I730366 B TWI730366 B TW I730366B
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light
light guide
electromagnetic wave
detection device
measured
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TW202107724A (en
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唐以隣
曾弘毅
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久盛光電股份有限公司
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Abstract

一種多頻譜電磁波檢測裝置,適用於檢測自一待測物而來的數道不同頻譜的待測光,並包含一受光單元,及數個光二極體陣列偵測單元。該受光單元包括數個分別用於傳導所述待測光的導光板,每一導光板包括一位於側面的出光面。該等光二極體陣列偵測單元分別位於該等導光板的該等出光面,並用於檢測經由該等出光面而來的光訊號,每一光二極體陣列偵測單元包括一銅銦硒(CIS)系光二極體。藉由CIS系光二極體,提升電磁波檢測裝置於近紅外光之光譜響應。利用該受光單元的該等導光板之導光作用,可區分並收集多頻譜光訊號,實現多頻譜的光波檢測。A multi-spectrum electromagnetic wave detection device is suitable for detecting several channels of light to be measured with different frequency spectra from an object to be measured, and includes a light receiving unit and several photodiode array detection units. The light receiving unit includes a plurality of light guide plates respectively used for transmitting the light to be measured, and each light guide plate includes a light emitting surface on the side. The photodiode array detection units are respectively located on the light-emitting surfaces of the light guide plates and are used to detect light signals coming through the light-emitting surfaces. Each photodiode array detection unit includes a copper indium selenium ( CIS) is an optical diode. With the CIS-based photodiode, the electromagnetic wave detection device's spectral response to near-infrared light is improved. The light guide function of the light guide plates of the light receiving unit can distinguish and collect multi-spectrum light signals to realize multi-spectrum light wave detection.

Description

多頻譜電磁波檢測裝置Multi-spectrum electromagnetic wave detection device

本發明是有關於一種電磁波檢測裝置,特別是指一種平板式的多頻譜電磁波檢測裝置。The present invention relates to an electromagnetic wave detection device, in particular to a flat-plate type multi-spectrum electromagnetic wave detection device.

近紅外光波段的感測可以應用在有機分子檢測與生醫檢測等技術上。在有機分子檢測應用上,藉由近紅外光波段的感測可以檢測飲食內的成分與含量;在生醫檢測上,應用在血氧檢測以及螢光標靶的定位偵測上。Sensing in the near-infrared light band can be applied to technologies such as organic molecular detection and biomedical detection. In the application of organic molecular detection, it is possible to detect the ingredients and content in the diet through the detection of near-infrared light band; in the biomedical detection, it is used in the detection of blood oxygen and the positioning of fluorescent cursor targets.

在生醫檢測的應用上,面板式的電磁波檢測裝置有助於對一待測物進行全貌式的影像重建。以台灣專利證書號I415283、I496277 、I500926、I570425等4件專利為例,這些專利記載有X光平板檢測器,乃是基於薄膜電晶體(TFT)驅動並掃描非晶矽PIN光二極體陣列以實現平面式的X光感測。由於非晶矽的光譜響應僅在可見光波段,因此必須在PIN光二極體陣列的受光面配置一波長轉換薄膜(例如碘化銫薄膜),可將穿透過待測物之X光轉換至可見光波段,因此實現將X光影像以可見光訊號入射至所述PIN光二極體陣列,並透過TFT的驅動與掃描,搭配外部之數位影像處理電路,重建出待測物X光影像的二維全貌。在過去十年當中,此類X射線平板偵測裝置迅速取代了習知的X光底片拍攝,進而成為普及的醫療檢測設備。In the application of biomedical testing, the panel-type electromagnetic wave detection device is helpful for the full-view image reconstruction of an object under test. Take 4 patents of Taiwan Patent Certificate No. I415283, I496277, I500926, and I570425 as examples. These patents record X-ray flat panel detectors, which are based on thin film transistors (TFT) driving and scanning amorphous silicon PIN photodiode arrays. Realize planar X-ray sensing. Since the spectral response of amorphous silicon is only in the visible light band, a wavelength conversion film (such as cesium iodide film) must be placed on the light-receiving surface of the PIN photodiode array, which can convert the X-rays that have passed through the object to the visible light band. Therefore, it is realized that the X-ray image is incident on the PIN photodiode array with visible light signals, and driven and scanned by the TFT, combined with an external digital image processing circuit, to reconstruct a two-dimensional overall view of the X-ray image of the object under test. In the past ten years, this type of X-ray flat panel detection device quickly replaced the conventional X-ray film shooting, and then became a popular medical detection equipment.

然而,相較於結晶矽PN光二極體結構,由於所述非晶矽PIN光二極體的內建電場很弱,且非晶矽薄膜內含太多的懸浮鍵結(Dangling Bond),使得非晶矽PIN光二極體的光電轉換效率難以突破8%,並且在多次光照後還會發生效率劣化才趨於穩定的現象(Staebler–Wronski Effect);也因為非晶矽PIN光二極體的低光電轉換效率,在此類平板電磁波檢測裝置的受光面,不適合配置會影響透光量的濾波片或波長轉換膜層,因此非晶矽PIN光二極體的應用範圍受限。However, compared to the crystalline silicon PN photodiode structure, the built-in electric field of the amorphous silicon PIN photodiode is very weak, and the amorphous silicon film contains too many dangling bonds, which makes non-crystalline silicon The photoelectric conversion efficiency of the crystalline silicon PIN photodiode is difficult to exceed 8%, and the efficiency degradation will occur after multiple exposures to stabilize (Staebler-Wronski Effect); also because of the low of the amorphous silicon PIN photodiode Photoelectric conversion efficiency. On the light-receiving surface of this type of flat electromagnetic wave detection device, it is not suitable to configure filters or wavelength conversion films that affect the amount of light transmission. Therefore, the application range of amorphous silicon PIN photodiodes is limited.

在生醫檢測的應用領域當中,奈米碳材與量子點的進步,使得癌細胞的標靶檢測有了多樣性螢光試劑的選擇機會。由於人體內的水分和血液等分子組成,對可見光有強烈的吸收,因此所述的螢光試劑的發光波段必須選擇在近紅外光波段,以避免在使用螢光標靶來針對腫瘤定位時,發生因為螢光訊號被完全吸收而導致誤判的錯誤診斷。除此之外,奈米碳材與量子點是否對人體具有毒性傷害之疑慮,也阻礙了螢光試劑在人體腫瘤檢測的發展。因此,開發出一種能偵測近紅外光波段,並且無須藉由激發活體內螢光試劑的電磁波檢測裝置,以期精準地重建近紅外光影像全貌與三維資訊,為相當重要的課題。Among the application fields of biomedical testing, the advancement of carbon nanomaterials and quantum dots has given the opportunity to choose a variety of fluorescent reagents for the target detection of cancer cells. Due to the molecular composition of water and blood in the human body, it strongly absorbs visible light. Therefore, the luminescence band of the fluorescent reagent must be selected in the near-infrared light band to avoid the occurrence of tumor positioning when using fluorescent cursor targets. Misdiagnosis of misjudgment because the fluorescent signal is completely absorbed. In addition, doubts about whether carbon nanomaterials and quantum dots are toxic to humans have also hindered the development of fluorescent reagents in human tumor detection. Therefore, it is a very important issue to develop an electromagnetic wave detection device that can detect near-infrared light bands without exciting fluorescent reagents in vivo, so as to accurately reconstruct the full picture and three-dimensional information of near-infrared light images.

另一方面,高光譜(Hyperspectral)影像感測技術已被普遍應用在航空遙測地上物質,例如針對土壤、植被、空汙、河川的組成鑑別,近來也被廣泛應用在農作物或蔬果的成熟度與腐敗度等等的判斷上。高光譜感測的原理主要是以具有極窄波長間隔的多波段、且近乎連續頻譜的光源照射至待測目標物,並以二維點陣式光偵測器件搭配光學鏡頭記錄待測目標物的二維空間影像訊號。由於在待測目標物當中,不同的組成物質對於這些不同操作波長之連續光源的照射會有不同的光學響應,例如:反射、吸收、散射、折射…等等,因此對應到不同操作波長的空間圖像則帶有不同光強度的光譜影像訊號。針對不同操作波長得到的空間光譜圖進行適當的演算法,可以對待測目標物進行識別與分析。On the other hand, Hyperspectral image sensing technology has been widely used in aerial remote sensing of ground materials, such as identifying the composition of soil, vegetation, air pollution, and rivers. Recently, it has also been widely used in the maturity and maturity of crops or fruits and vegetables. Judgment of corruption and so on. The principle of hyperspectral sensing is mainly to illuminate the object under test with a multi-band and nearly continuous spectrum light source with extremely narrow wavelength intervals, and to record the object under test with a two-dimensional dot-matrix light detection device and an optical lens The two-dimensional spatial image signal. Since among the target objects to be measured, different constituent materials will have different optical responses to the continuous light sources with different operating wavelengths, such as reflection, absorption, scattering, refraction, etc., so they correspond to the space of different operating wavelengths. The image has spectral image signals with different light intensities. Proper algorithm is performed on the spatial spectra obtained from different operating wavelengths, and the target object to be measured can be identified and analyzed.

近來基於高光譜技術衍生出來的近距離應用,例如蔬果成熟度的判斷、人體皮膚表層血流的識別等應用,也被區分為多頻譜(Multi Spectral) 感測的應用,並不需要波段數如高光譜遙測需求般地高達數十到數百個通道,且取像距離小於一公尺內。如何使用體積較小的光學系統以達到相對高的二維空間分辨率,使得多頻譜技術可以普及如所述在近距離或手持式感測的廣泛應用上,成為主要的技術改善課題。Recent short-range applications derived from hyperspectral technology, such as the judgment of the maturity of vegetables and fruits, and the recognition of the blood flow on the surface of human skin, have also been classified as applications for multi-spectral sensing, which do not require the number of bands such as Hyperspectral telemetry requires tens to hundreds of channels, and the imaging distance is less than one meter. How to use a relatively small optical system to achieve a relatively high two-dimensional spatial resolution, so that the multi-spectrum technology can be popularized in the wide application of short-range or hand-held sensing as described, has become a major technical improvement issue.

因此,針對波段範圍小於2.5μm波長(包含近紅外光波段)的多頻譜電磁波檢測裝置,有至少以下幾點必須改進或值得研究:(1)改善光二極體陣列的近紅外光之光譜響應;(2)如何改良裝置結構來區分並收集多頻譜訊號,以期實現大面積多頻譜電磁波檢測;(3)改善光二極體陣列的光電轉換效率,使得即使在檢測裝置上配置額外的元件,例如波長調變單元或是相位調變單元之同時,依然能維持檢測功能所要求的高敏感度,進而實現三維資訊或是高解析度的影像重建;(4)在例如生醫檢測的應用上,免除螢光劑的使用。Therefore, for the multi-spectrum electromagnetic wave detection device with a wavelength range of less than 2.5 μm (including the near-infrared light band), at least the following points must be improved or worthy of study: (1) Improve the near-infrared light spectral response of the photodiode array; (2) How to improve the device structure to distinguish and collect multi-spectral signals, in order to achieve large-area multi-spectrum electromagnetic wave detection; (3) Improve the photoelectric conversion efficiency of the photodiode array, so that even if additional components such as wave The long modulation unit or the phase modulation unit can still maintain the high sensitivity required by the detection function, thereby achieving three-dimensional information or high-resolution image reconstruction; (4) In applications such as biomedical testing, it is exempted Use of fluorescent agent.

因此,本發明之目的,即在提供一種能克服先前技術的至少一個缺點的多頻譜電磁波檢測裝置。Therefore, the purpose of the present invention is to provide a multi-spectrum electromagnetic wave detection device that can overcome at least one of the disadvantages of the prior art.

於是,本發明多頻譜電磁波檢測裝置,適用於檢測自一待測物而來的數道不同頻譜的待測光,並包含一受光單元,及數個光二極體陣列偵測單元。Therefore, the multi-spectrum electromagnetic wave detection device of the present invention is suitable for detecting light to be measured with different frequency spectra from an object to be measured, and includes a light receiving unit and a plurality of photodiode array detection units.

該受光單元包括數個上下疊置的導光板,每一導光板包括一朝上的受光面、一朝下的背面,以及一連接於該受光面與該背面間的出光面,該等導光板分別用於傳導由該待測物來的所述待測光,且所述待測光分別由該等導光板的該等受光面進入該等導光板中,再分別由該等導光板的該等出光面射出。The light receiving unit includes a plurality of light guide plates stacked one above the other. Each light guide plate includes an upward light receiving surface, a downward facing back surface, and a light emitting surface connected between the light receiving surface and the back surface. The light guide plates The light to be measured is respectively used to transmit the light to be measured from the object to be measured, and the light to be measured enters the light guide plates from the light-receiving surfaces of the light guide plates, and then the light exits from the light guide plates. Face shot.

該等光二極體陣列偵測單元位於該等導光板的該等出光面,且分別對應該等導光板而上下設置,該等光二極體陣列偵測單元用於檢測經由該等出光面而來的光訊號,每一光二極體陣列偵測單元包括一基材,以及至少一形成於該基材上的感測像素,該至少一感測像素包括一用於檢測光訊號的光二極體,該光二極體為銅銦硒系光二極體,且由鄰近而遠離該基材依序包括一正電極、一p型半導體製成的吸收層、一n型半導體製成的緩衝層,以及一負電極,該吸收層的材料為CuInx Ga(1-x) Sey S(1-y) ,其中x為0到1之任意實數, y為0到1之任意實數。The light-diode array detection units are located on the light-emitting surfaces of the light guide plates, and are respectively arranged up and down corresponding to the light-guiding plates, and the light-diode array detection units are used for detecting light-emitting surfaces through the light-emitting surfaces. Each photodiode array detection unit includes a substrate, and at least one sensing pixel formed on the substrate, and the at least one sensing pixel includes a photodiode for detecting the optical signal, The photodiode is a copper-indium-selenium-based photodiode, and includes a positive electrode, an absorption layer made of p-type semiconductor, a buffer layer made of n-type semiconductor, and a Negative electrode, the material of the absorption layer is CuIn x Ga (1-x) Se y S (1-y) , where x is any real number from 0 to 1, and y is any real number from 0 to 1.

本發明之功效在於:採用CIS系光二極體,提升電磁波檢測裝置於近紅外光之光譜響應。利用該受光單元的該等導光板之導光作用,可區分並收集多頻譜光訊號,實現多頻譜的光波檢測。也正因為本發明為多頻譜光波檢測,因此應用在生醫檢測上,可以免除螢光劑使用。也因為該光二極體陣列偵測單元的光電轉換效率佳,使得即使在該受光單元上配置額外的波長調變單元、相位調變單元,依然能維持檢測功能所要求的高敏感度,進而實現三維資訊或是高解析度的影像重建。The effect of the present invention is that the CIS-based optical diode is used to improve the spectral response of the electromagnetic wave detection device to near-infrared light. The light guide function of the light guide plates of the light receiving unit can distinguish and collect multi-spectrum light signals to realize multi-spectrum light wave detection. It is also precisely because the present invention is a multi-spectrum light wave detection, so it is applied to biomedical detection, which can avoid the use of fluorescent agents. Also because the photodiode array detection unit has good photoelectric conversion efficiency, even if additional wavelength modulation units and phase modulation units are arranged on the light receiving unit, the high sensitivity required by the detection function can still be maintained, thereby achieving Three-dimensional information or high-resolution image reconstruction.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numbers.

參閱圖1~4,本發明多頻譜電磁波檢測裝置之一第一實施例,適用於檢測自一待測物9而來的數道不同頻譜的待測光(也就是數個不同頻道的待測光)(待測光如圖中箭頭A示意),並包含一受光單元1、數個光二極體陣列偵測單元2,以及數個光源單元3。Referring to Figures 1 to 4, a first embodiment of the multi-spectrum electromagnetic wave detection device of the present invention is suitable for detecting several channels of light to be measured with different spectrums from an object 9 to be measured (that is, light to be measured with several different channels) (The light to be measured is indicated by arrow A in the figure), and includes a light receiving unit 1, a plurality of photodiode array detection units 2, and a plurality of light source units 3.

該受光單元1包括數個上下疊置的導光板11,每一導光板11包括一朝上的受光面111、一朝下的背面112,以及一連接於該受光面111與該背面112間且四面環繞的出光面113。該等導光板11具有導光功能,分別用於傳導由該待測物9反射而來的不同頻譜的所述待測光,且所述待測光分別由該等導光板11的該等受光面111進入該等導光板11中,再由該等出光面113射出。The light receiving unit 1 includes a plurality of light guide plates 11 stacked one above the other. Each light guide plate 11 includes a light receiving surface 111 facing upwards, a back surface 112 facing downwards, and a light guide plate 11 connected between the light receiving surface 111 and the back surface 112. A light-emitting surface 113 surrounded on all sides. The light guide plates 11 have a light guide function, and are respectively used to guide the light to be measured with different frequency spectra reflected from the object 9 to be measured, and the light to be measured is respectively provided by the light-receiving surfaces 111 of the light guide plates 11 It enters into the light guide plates 11, and then emits from the light exit surfaces 113.

該受光單元1在水平方向上可區分成包括一受光部12,以及一連接於該受光部12四周圍並位於該受光部12與該等光二極體陣列偵測單元2間的導光部13。該受光部12與該導光部13由該等導光板11共同形成。該等待測光由對應於該受光部12區域的該等受光面111進入該等導光板11中,並由該受光部12進入該導光部13後,在對應於該導光部13區域的該等受光面111與該等出光面113間多次反射後,再通過該等出光面113射向該等光二極體陣列偵測單元2。The light receiving unit 1 can be divided into a light receiving part 12 in the horizontal direction, and a light guiding part 13 connected around the light receiving part 12 and located between the light receiving part 12 and the photodiode array detection units 2 . The light receiving portion 12 and the light guiding portion 13 are formed by the light guiding plates 11 together. After the waiting light metering enters the light guide plate 11 from the light receiving surfaces 111 corresponding to the light receiving portion 12 area, and enters the light guide 13 from the light receiving portion 12, the light guide 13 After multiple reflections between the light-receiving surface 111 and the light-emitting surfaces 113, the light-emitting surfaces 113 are then directed toward the light-diode array detection units 2 through the light-emitting surfaces 113.

舉例來說,本第一實施例有M個頻道的待測光,M≧2且M為整數,該等待測光於不同時間點分別入射至該受光單元1,導光板11的數量對應所述待測光的數量,也是M個,而且第m個導光板11用於傳導第m個頻道的待測光,所述m為1到M的其中一正整數。在本第一實施例中,以M=3為例,該等導光板11由上往下分別為第一個、第二個及第三個導光板11,分別用於傳導第一個、第二個與第三個頻道的待測光,使第m個頻道待測光可經由第m個導光板11的出光面113射向對應的光二極體陣列偵測單元2。其中,第一個頻道待測光通過第一個導光板11的受光面111後,在該第一個導光板11中傳播,第二個頻道待測光通過該第一個導光板11的受光面111與該第二個導光板11的受光面111後,在該第二個導光板11中傳播,第三個頻道待測光通過所述三個導光板11的受光面111後,在該第三個導光板11中傳播。若待測光與導光板11的數量更多時,依此類推。For example, in the first embodiment, there are M channels of light to be measured, M≧2 and M is an integer. The light to be measured is incident on the light receiving unit 1 at different time points, and the number of light guide plates 11 corresponds to the light to be measured. The number is also M, and the m-th light guide plate 11 is used to guide the light to be measured in the m-th channel, and the m is a positive integer from 1 to M. In the first embodiment, taking M=3 as an example, the light guide plates 11 are the first, second, and third light guide plates 11 from top to bottom, and are used to conduct the first and third light guide plates 11 respectively. The light to be measured in the two and the third channels allows the light to be measured in the m-th channel to be emitted to the corresponding photodiode array detection unit 2 through the light-emitting surface 113 of the m-th light guide plate 11. Wherein, the light to be measured in the first channel passes through the light receiving surface 111 of the first light guide plate 11, and then propagates in the first light guide plate 11, and the light to be measured in the second channel passes through the light receiving surface 111 of the first light guide plate 11 After passing through the light receiving surface 111 of the second light guide plate 11, the light to be measured in the third channel passes through the light receiving surface 111 of the three light guide plate 11, and then passes through the light receiving surface 111 of the third light guide plate 11. The light guide plate 11 propagates. If the number of light to be measured and the number of light guide plates 11 is more, the same goes for.

該受光單元1的每一導光板11可以為聚對苯二甲酸乙二酯(polyethylene terephthalate,簡稱PET)、聚苯乙烯 (polystyrene,簡稱PS)、聚碳酸酯 (polycarbonate,簡稱PC)、聚甲基丙烯酸甲酯 (poly(methyl methacrylate) , 簡稱PMMA)等樹脂或塑性材料。Each light guide plate 11 of the light receiving unit 1 can be made of polyethylene terephthalate (PET), polystyrene (PS), polycarbonate (PC), or polyethylene terephthalate. Poly(methyl methacrylate) (PMMA) and other resins or plastic materials.

更進一步地,任兩相鄰導光板11間設有一圖未示的黏著層,透過黏著層將該等導光板11黏合固定。每一黏著層例如光學透明膠(optically clear adhesion,簡稱OCA)。該等黏著層的折射率小於該等導光板11的折射率,黏著層折射率以na (λm )表示,導光板11折射率以ng (λm )表示,其中λm 為第m個頻道的待測光波長。當滿足na (λm )>ng (λm )之條件,且各層導光板11的厚度tm 滿足類似單模光纖的直徑條件:

Figure 02_image003
,在此條件下,只要是入射角大於臨界角
Figure 02_image005
的待測光訊號,將在各層導光板11對應於該受光部12的區域內部以全反射方式傳輸抵達該導光部13,並經由該等出光面113進入該等光二極體陣列偵測單元2,而且如前述,第m個導光板11用於傳導第m個頻道的待測光。其中,對於最上方的該第一個導光板11而言,其所對應之na (λm )為該受光面111上方之介質折射率,例如:本發明裝置所在的空氣折射率。Furthermore, an adhesive layer (not shown) is provided between any two adjacent light guide plates 11, and the light guide plates 11 are adhered and fixed through the adhesive layer. Each adhesive layer is, for example, optically clear adhesion (OCA). The refractive index of the adhesive layer is smaller than the refractive index of the light guide plate 11, the refractive index of the adhesive layer is represented by n a ( λ m ), and the refractive index of the light guide plate 11 is represented by n g ( λ m ), where λ m is the mth The wavelength of the light to be measured for each channel. When the condition of n a ( λ m )> n g ( λ m ) is satisfied, and the thickness t m of each layer of light guide plate 11 meets the diameter condition similar to that of a single-mode fiber:
Figure 02_image003
, Under this condition, as long as the incident angle is greater than the critical angle
Figure 02_image005
The light signal to be measured will be transmitted to the light guide portion 13 in the manner of total reflection inside the area of each layer of the light guide plate 11 corresponding to the light receiving portion 12, and enter the light diode array detection unit 2 through the light exit surfaces 113 , And as mentioned above, the m-th light guide plate 11 is used to guide the light to be measured in the m-th channel. Wherein, for the first guide plate 11 in terms of the top, it corresponds to the n a m) above the index of refraction for the medium receiving surface 111, for example: refractive index of air present invention device is located.

該等光二極體陣列偵測單元2位於該等導光板11的該等出光面113,且分別對應該等導光板11而上下設置。該等光二極體陣列偵測單元2用於檢測經由該等出光面113而來的光訊號。每一光二極體陣列偵測單元2包括一基材21,以及數個形成於該基材21上並呈陣列排列的感測像素22。每一感測像素22包括一用於掃描驅動與傳輸數據的薄膜電晶體4(TFT)、一連接該薄膜電晶體4並用於檢測光訊號的光二極體5,以及一與該光二極體5並聯的儲存電容6。The photodiode array detection units 2 are located on the light-emitting surfaces 113 of the light guide plates 11, and are respectively arranged up and down corresponding to the light guide plates 11. The light-diode array detection units 2 are used for detecting light signals coming through the light-emitting surfaces 113. Each photodiode array detection unit 2 includes a substrate 21 and a plurality of sensing pixels 22 formed on the substrate 21 and arranged in an array. Each sensing pixel 22 includes a thin film transistor 4 (TFT) for scanning drive and data transmission, a photodiode 5 connected to the thin film transistor 4 and used for detecting optical signals, and a photodiode 5 with the photodiode 5 Parallel storage capacitor 6.

其中,該薄膜電晶體4可為一場效電晶體(FET) ,例如一頂閘極共面型(Top-gate coplanar)的TFT結構,並包括一閘極金屬電極41、一位於該基材21上且延伸至該儲存電容6下方的第一絕緣層42、一位於該第一絕緣層42上的本質半導體通道層43、位於該本質半導體通道層43兩側的一汲極金屬電極44與一源極金屬電極45、一位於該汲極金屬電極44與該本質半導體通道層43間且重摻雜以形成歐姆接觸的汲極接觸介面46、一位於該源極金屬電極45與該本質半導體通道層43間且重摻雜以形成歐姆接觸的源極接觸介面47,以及一位於該汲極金屬電極44與該源極金屬電極45上方的第二絕緣層48。本第一實施例的TFT結構僅為舉例,因為還有其他種結構的TFT也能適用,因此不能以此限定本發明實施之範圍。Wherein, the thin film transistor 4 can be a field effect transistor (FET), for example, a top-gate coplanar TFT structure, and includes a gate metal electrode 41 and a gate metal electrode 41 on the substrate 21 The first insulating layer 42 above and extending below the storage capacitor 6, an essential semiconductor channel layer 43 on the first insulating layer 42, a drain metal electrode 44 and a drain metal electrode 44 on both sides of the essential semiconductor channel layer 43 A source metal electrode 45, a drain contact interface 46 between the drain metal electrode 44 and the essential semiconductor channel layer 43 and heavily doped to form an ohmic contact, and a drain contact interface 46 between the source metal electrode 45 and the essential semiconductor channel The source contact interface 47 between the layers 43 and heavily doped to form an ohmic contact, and a second insulating layer 48 located above the drain metal electrode 44 and the source metal electrode 45. The TFT structure of the first embodiment is only an example, because there are other types of TFTs that can also be applied, so the scope of implementation of the present invention cannot be limited by this.

需要說明的是,為了驅動並掃描所述光二極體5,TFT還可以採用多晶矽薄膜電晶體(poly-silicon TFT)、非晶矽薄膜電晶體(a-Si TFT)、亦或是金屬氧化物薄膜電晶體。另外,也可以採用互補式金屬氧化物半導體(CMOS)來作為驅動電路元件,而不以採用TFT為限制。It should be noted that, in order to drive and scan the photodiode 5, the TFT can also be a poly-silicon thin film transistor (poly-silicon TFT), an amorphous silicon thin film transistor (a-Si TFT), or a metal oxide. Thin film transistors. In addition, a complementary metal oxide semiconductor (CMOS) can also be used as the driving circuit element, instead of using TFT as a limitation.

為了提高本發明之多頻譜電磁波檢測裝置的靈敏度,以提升裝置之訊號雜訊比(signal-to-noise ratio,簡稱SNR),該光二極體5為銅銦硒(CIS)系光二極體5,且由鄰近而遠離該基材21依序包括一正電極51、一p型半導體製成的吸收層52、一n型半導體製成的緩衝層53、一經由上方的一連接電極50而與該源極金屬電極45串接的負電極54,以及一入射窗口層55。In order to improve the sensitivity of the multi-spectrum electromagnetic wave detection device of the present invention and improve the signal-to-noise ratio (SNR) of the device, the photodiode 5 is a copper indium selenide (CIS) photodiode 5 , And adjacent to and away from the substrate 21, including a positive electrode 51, an absorber layer 52 made of p-type semiconductor, a buffer layer 53 made of n-type semiconductor, and a connecting electrode 50 through the upper and The source metal electrode 45 is connected to the negative electrode 54 in series, and an incident window layer 55.

該光二極體5的正電極51可以為金屬鉬(Mo),或是以鉬合金為主的單層或多層膜層結構。該光二極體5為銅銦硒(CIS)系光二極體5,所述銅銦硒(CIS)系主要是指該吸收層52的材料,可以為銅、銦、鎵、硒、硫所形成的三元、四元、或是五元化合物薄膜,例如該吸收層52可包含銅銦硒,或銅銦鎵硒硫,或銅銦鎵硒,或銅鎵硒等等,薄膜厚度大約1.5μm至2μm。該吸收層52的材料以化學式來表示為:CuInx Ga(1-x) Sey S(1-y) ,其中x為0到1之任意實數,y為0到1之任意實數。該緩衝層53為硫化鎘(CdS),或是硫化鋅(ZnS)薄膜,厚度大約0.05μm。該負電極54為透明導電材料,例如氧化銦錫(ITO),或是摻鋁氧化鋅(ZnO:Al)並在其上疊層未摻雜氧化鋅(i-ZnO)。該入射窗口層55為透明之絕緣層,其材料可以為氧化矽(SiOx )或氮化矽(SiNx )。The positive electrode 51 of the photodiode 5 may be metallic molybdenum (Mo), or a single-layer or multi-layer structure mainly composed of molybdenum alloy. The photodiode 5 is a copper indium selenium (CIS) photodiode 5. The copper indium selenium (CIS) system mainly refers to the material of the absorption layer 52, which can be formed of copper, indium, gallium, selenium, and sulfur The ternary, quaternary, or five-member compound film, for example, the absorption layer 52 may include copper indium selenium, or copper indium gallium selenium sulfur, or copper indium gallium selenium, or copper gallium selenium, etc., and the thickness of the film is about 1.5 μm To 2μm. The material of the absorption layer 52 is represented by a chemical formula: CuIn x Ga (1-x) Se y S (1-y) , where x is any real number from 0 to 1, and y is any real number from 0 to 1. The buffer layer 53 is a cadmium sulfide (CdS) or zinc sulfide (ZnS) film, with a thickness of about 0.05 μm. The negative electrode 54 is made of a transparent conductive material, such as indium tin oxide (ITO), or aluminum-doped zinc oxide (ZnO:Al), and an undoped zinc oxide (i-ZnO) layer is laminated thereon. The incident window layer 55 is a transparent insulating layer, and its material can be silicon oxide (SiO x ) or silicon nitride (SiN x ).

該儲存電容6位於該基材21與該光二極體5間,並具有上下間隔的一第一電極61與一第二電極62,以及一將該第一電極61與該第二電極62隔開的第三絕緣層63。該第一電極61即為該光二極體5的該正電極51,亦即,儲存電容6的第一電極61與該光二極體5的正電極51共用並外接操作偏壓。該第二電極62、該源極金屬電極45與該負電極54,三者藉由該連接電極50共同連接,作為由光訊號激發之光電流所流出的電荷輸入端點及儲存端點。The storage capacitor 6 is located between the substrate 21 and the photodiode 5, and has a first electrode 61 and a second electrode 62 spaced up and down, and a space between the first electrode 61 and the second electrode 62 The third insulating layer 63. The first electrode 61 is the positive electrode 51 of the photodiode 5, that is, the first electrode 61 of the storage capacitor 6 and the positive electrode 51 of the photodiode 5 are shared and externally connected with an operating bias. The second electrode 62, the source metal electrode 45, and the negative electrode 54 are connected together by the connecting electrode 50, and serve as a charge input terminal and a storage terminal of the photocurrent excited by the light signal.

該等光源單元3分別位於該受光單元1的四周,每一光源單元3為多頻譜的光源,用於發出數種不同頻譜的檢測光(如圖3箭頭B)照射該待測物9,該待測物9接收所述檢測光後形成不同頻譜的所述待測光,所述待測光再射向該受光單元1。每一光源單元3於不同時間點發出不同頻譜的所述檢測光,以下會有具體說明。該等光源單元3可以為本發明內建又或者可以為外接,因此本發明不以該等光源單元3為必要限制。另外,也可以僅設置一個所述光源單元3。The light source units 3 are respectively located around the light receiving unit 1, and each light source unit 3 is a multi-spectrum light source for emitting detection light of several different spectra (arrow B in Fig. 3) to illuminate the object to be tested 9. After receiving the detection light, the object to be measured 9 forms the light to be measured with a different frequency spectrum, and the light to be measured is then directed toward the light receiving unit 1. Each light source unit 3 emits the detection light of a different frequency spectrum at different time points, which will be described in detail below. The light source units 3 may be built-in in the present invention or may be externally connected, so the present invention is not necessarily limited to the light source units 3. In addition, only one light source unit 3 may be provided.

本發明使用時,該等導光板11依據由上往下的方向,所傳導的待測光的頻譜為由低到高。該光源單元3可依據由低頻到高頻的順序來發出多道檢測光,且檢測光射向該待測物9的角度不平行於該受光單元1的受光面111法線角度。具體說明如下,首先,該光源單元3朝該待測物9發出第一道檢測光(例如紅光),該待測物9對該第一道檢測光產生反射、吸收、散射、折射等光學響應後,反射出該第一個頻道的待測光並射向最上方的該導光板11,經由該導光板11傳導後,待測光訊號進入對應的該光二極體陣列偵測單元2中。接著,該光源單元3依序發出第二道檢測光(例如橙光)、第三道檢測光(例如黃光),再經由該待測物9的光學響應後依序形成該第二個頻道的待測光、該第三個頻道的待測光,並由對應的導光板11傳導以及由對應的光二極體陣列偵測單元2吸收與分析,進而可依據光訊號分析重建出該待測物9的二維全貌。補充說明的是,檢測前,需要預先量測每個感測像素22單獨照光下,整個檢測裝置的脈衝響應(impulse response),之後實際量測該待測物9的光訊號時,要採用適當的演算法依所述脈衝響應去做反摺績(deconvolution),即可把待測光訊號解調出來。When the present invention is used, the light guide plates 11 follow the direction from top to bottom, and the spectrum of the light to be measured transmitted from low to high. The light source unit 3 can emit multiple detection lights in a sequence from low frequency to high frequency, and the angle of the detection light directed to the object 9 is not parallel to the normal angle of the light receiving surface 111 of the light receiving unit 1. The detailed description is as follows. First, the light source unit 3 emits a first detection light (for example, red light) toward the test object 9, and the test object 9 reflects, absorbs, scatters, and refracts the first detection light. After the response, the light to be measured in the first channel is reflected and directed to the uppermost light guide plate 11. After being transmitted through the light guide plate 11, the light signal to be measured enters the corresponding photodiode array detection unit 2. Then, the light source unit 3 emits a second detection light (for example, orange light) and a third detection light (for example, yellow light) in sequence, and then forms the second channel in sequence after the optical response of the test object 9 The light to be measured in the third channel and the light to be measured in the third channel are transmitted by the corresponding light guide plate 11 and absorbed and analyzed by the corresponding photodiode array detection unit 2, and then the object to be measured 9 can be reconstructed according to the light signal analysis The two-dimensional picture. It is added that before detection, the impulse response of the entire detection device under individual illumination of each sensing pixel 22 needs to be measured in advance, and then when the optical signal of the object under test 9 is actually measured, appropriate According to the impulse response, the algorithm used to perform deconvolution (deconvolution) can demodulate the optical signal to be measured.

實際上光源單元3發出不同頻譜的檢測光切換速度很快,因此本發明在短時間內就可完成檢測分析。本發明為可偵測可見光波段與近紅外光波段且為多頻譜的電磁波檢測裝置,其中,在近紅外光波段的感測可以應用在有機分子檢測與生醫檢測等技術上。In fact, the light source unit 3 emits detection lights of different frequency spectrums at a very fast switching speed, so the present invention can complete detection and analysis in a short time. The present invention is a multi-spectrum electromagnetic wave detection device that can detect visible light and near-infrared light bands. The sensing in the near-infrared light band can be applied to organic molecular detection and biomedical detection technologies.

綜上所述,本發明採用CIS系光二極體5,由於其具有高轉換效率,在近紅外光波段有較佳的量子效率,從而提升電磁波檢測裝置於近紅外光之光譜響應。利用該受光單元1的該等導光板11之導光作用,可區分並收集多頻譜光訊號,實現多頻譜的光波檢測。也正因為本發明為多頻譜光波檢測,因此應用在生醫檢測上,可以免除螢光劑使用,確實達到本發明的目的。To sum up, the present invention adopts the CIS-based photodiode 5, which has a better quantum efficiency in the near-infrared light band due to its high conversion efficiency, thereby improving the spectral response of the electromagnetic wave detection device to near-infrared light. Utilizing the light guiding function of the light guide plates 11 of the light receiving unit 1, it is possible to distinguish and collect multi-spectrum light signals to realize multi-spectrum light wave detection. It is also precisely because the present invention is a multi-spectrum light wave detection, so it can be used in biomedical detection, can avoid the use of fluorescent agent, and indeed achieve the purpose of the present invention.

參閱圖5,本發明多頻譜電磁波檢測裝置之一第二實施例,與該第一實施例的結構大致相同,不同處在於,本第二實施例還包含一設置於該受光單元1的該受光部12上,並用於轉換入射而來的光波長的波長調變單元7。該波長調變單元7用於轉換入射而來的待測光波長,使轉換後的波長成為光二極體陣列偵測單元2可檢測的波段範圍。Referring to FIG. 5, a second embodiment of the multi-spectrum electromagnetic wave detection device of the present invention has substantially the same structure as the first embodiment, except that the second embodiment further includes a light receiving unit 1 disposed on the light receiving unit 1. On the part 12, the wavelength modulation unit 7 is used to convert the wavelength of the incident light. The wavelength modulation unit 7 is used to convert the incident light wavelength to be measured, so that the converted wavelength becomes the detectable wavelength range of the photodiode array detection unit 2.

正因為本發明採用了高光電轉換效率之CIS系光二極體陣列偵測單元2,因此在達到本發明應用所需的訊號雜訊比(SNR)前提下,可配置該波長調變單元7。該波長調變單元7可以為波長轉換膜層或濾波片。該波長調變單元7的功能可以為上轉換(up-conversion),意即將頻率較低的光波轉換成頻率較高之光訊號。相對的,該波長調變單元7功能也可以為下轉換(down-conversion) ,意即將頻率較高的光波轉換成頻率較低之光訊號。所述經波長轉換過後之光訊號,其λm 須在350nm到1300nm之間,以符合CIS系光二極體之光譜響應範圍。一個較佳的實施例為:所述波長調變單元7為碘化銫(CsI)薄膜,當入射電磁波為X射線,碘化銫(CsI)薄膜可轉換X射線於可見光波段。由於CIS系光二極體的高光電轉換效率,使本發明裝置可實現平板式低X射線輻照度檢測裝置,並可使平板檢測裝置維持高敏感度。Because the present invention uses the CIS photodiode array detection unit 2 with high photoelectric conversion efficiency, the wavelength modulation unit 7 can be configured under the premise of achieving the signal-to-noise ratio (SNR) required by the application of the present invention. The wavelength modulation unit 7 can be a wavelength conversion film or a filter. The function of the wavelength modulation unit 7 can be an up-conversion, which means that a light wave with a lower frequency is converted into an optical signal with a higher frequency. On the other hand, the function of the wavelength modulation unit 7 can also be down-conversion, which means that a light wave with a higher frequency is converted into an optical signal with a lower frequency. The λ m of the optical signal after wavelength conversion must be between 350 nm and 1300 nm to meet the spectral response range of the CIS-based optical diode. A preferred embodiment is that the wavelength modulation unit 7 is a cesium iodide (CsI) film. When the incident electromagnetic wave is X-rays, the cesium iodide (CsI) film can convert the X-rays to the visible light band. Due to the high photoelectric conversion efficiency of the CIS-based photodiode, the device of the present invention can realize a flat panel low X-ray irradiance detection device and can maintain a high sensitivity of the flat panel detection device.

參閱圖6,本發明多頻譜電磁波檢測裝置之一第三實施例,與該第一實施例的結構大致相同,不同處在於,本第三實施例的每一導光板11的材料包含能轉換入射而來的光波長的波長轉換材料71,也就是說,本第三實施例在各導光板11中摻入波長轉換材料71,使每一導光板11本身就具有波長轉換功能。本實施例的波長轉換材料71為光致發光材料,光致發光材料能受到入射光激發出一不同於該入射光波長的光,達到改變光波長的效果。Referring to FIG. 6, a third embodiment of a multi-spectrum electromagnetic wave detection device of the present invention has roughly the same structure as the first embodiment. The difference is that the material of each light guide plate 11 of the third embodiment includes a material that can convert incident light. The wavelength conversion material 71 for the wavelength of the light coming, that is, in the third embodiment, the wavelength conversion material 71 is incorporated into each light guide plate 11, so that each light guide plate 11 itself has a wavelength conversion function. The wavelength conversion material 71 of this embodiment is a photoluminescent material, and the photoluminescent material can be excited by incident light to generate light with a wavelength different from the incident light, so as to achieve the effect of changing the wavelength of the light.

參閱圖7,本發明多頻譜電磁波檢測裝置之一第四實施例,與該第一實施例的結構大致相同,不同處在於,本第四實施例還包含一設置於該受光單元1的該受光部12上的相位調變單元8。所述相位調變單元8,是指採用透光或半透光的膜片材料製作出空間變化的微結構,以調變電磁波入射到各個光二極體5(圖4)後的空間光程差,達到調變相位的功能。Referring to FIG. 7, a fourth embodiment of a multi-spectrum electromagnetic wave detection device of the present invention has substantially the same structure as the first embodiment, except that the fourth embodiment also includes a light receiving unit 1 provided in the light receiving unit 1. Section 12 on the phase modulation unit 8. The phase modulation unit 8 refers to the use of light-transmissive or semi-transmissive diaphragm materials to make spatially variable microstructures to modulate the spatial optical path difference after electromagnetic waves are incident on each light diode 5 (Figure 4) , To achieve the function of phase modulation.

正因為本發明採用了高光電轉換效率之CIS系光二極體陣列偵測單元2,因此在達到本發明應用所需的訊號雜訊比(SNR)前提下,可配置該相位調變單元8。所述相位調變單元8,第一類可以為單純開孔與遮光之週期性或非週期性孔徑,週期性孔徑是指數個開孔的孔徑相同,且該等開孔週期性(等距離)排列;非週期性孔徑是指數個開孔的孔徑相同,但該等開孔非週期性排列。週期性孔徑較佳例如準直膜(collimator film)或隱私膜(privacy film),準直膜和隱私膜都是防窺膜的一種,但準直膜通常比較厚,且由一束纖維束(fiber bundle)削片形成;而非週期性孔徑較佳例如編碼孔徑 (coded aperture)。另外第二類的相位調變單元8,較佳例如繞射光柵、微透鏡陣列,或繞射光柵與微透鏡陣列的組合所形成的光學薄膜。上述不同結構之相位調變單元8,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍。Because the present invention uses the CIS-based photodiode array detection unit 2 with high photoelectric conversion efficiency, the phase modulation unit 8 can be configured under the premise of achieving the signal-to-noise ratio (SNR) required by the application of the present invention. The first type of the phase modulation unit 8 may be periodic or non-periodic apertures with simple apertures and shading. The periodic apertures are exponentially the same as the apertures of the apertures, and the apertures are periodic (equal distance) Arrangement; non-periodic pore diameter means that the pore diameters of the exponential openings are the same, but the openings are arranged non-periodically. Periodic apertures are preferably such as collimator film or privacy film. Both collimator film and privacy film are a kind of privacy film, but the collimator film is usually thicker and consists of a bundle of fiber bundles ( The fiber bundle is formed by chipping; the non-periodic aperture is preferably, for example, a coded aperture. In addition, the second type of phase modulation unit 8 is preferably an optical film formed by a diffraction grating, a microlens array, or a combination of a diffraction grating and a microlens array. The above-mentioned phase modulation unit 8 with different structure is only an embodiment of the present invention, and should not be used to limit the scope of implementation of the present invention.

配置該相位調變單元8的目的為,本發明用於接收待測光的該受光單元1為接收二維光訊號的受光單元1,而光二極體陣列偵測單元2為一維掃描式光二極體陣列,藉由該相位調變單元8搭配適當的演算法,可實現以一維接受訊號重建二維乃至三維的光訊號,進而實現三維資訊或是高解析度的影像重建。其中,較佳的演算法例如壓縮孔徑編碼(compressive coded aperture)演算法。The purpose of configuring the phase modulation unit 8 is that the light receiving unit 1 for receiving the light to be measured in the present invention is the light receiving unit 1 for receiving two-dimensional light signals, and the photodiode array detection unit 2 is a one-dimensional scanning light diode The volume array, by using the phase modulation unit 8 with an appropriate algorithm, can realize the reconstruction of two-dimensional or even three-dimensional optical signals from the one-dimensional received signal, thereby realizing three-dimensional information or high-resolution image reconstruction. Among them, a preferred algorithm is, for example, a compressed coded aperture (compressive coded aperture) algorithm.

參閱圖8,本發明多頻譜電磁波檢測裝置之一第五實施例,與該第四實施例的結構大致相同,不同處在於,本第五實施例的該相位調變單元8設置於該受光單元1的導光部13上。該相位調變單元8為一環形膜片,並包括數個透光區81,以及數個與該等透光區81穿插的遮光區82。位於該等遮光區82間的每一透光區81可為一貫穿該膜片的上、下表面的開孔,可以採用如第四實施例所述的週期性孔徑,也可以採用非週期性孔徑。圖8則是以週期性孔徑為例。本第五實施例與該第四實施例相同,同樣能實現三維資訊或是高解析度的影像重建。Referring to FIG. 8, a fifth embodiment of a multi-spectrum electromagnetic wave detection device of the present invention has substantially the same structure as the fourth embodiment, except that the phase modulation unit 8 of the fifth embodiment is disposed in the light receiving unit 1 on the light guide portion 13. The phase modulation unit 8 is an annular diaphragm and includes a plurality of light-transmitting regions 81 and a plurality of light-shielding regions 82 interspersed with the light-transmitting regions 81. Each light-transmitting area 81 located between the light-shielding areas 82 can be an opening penetrating the upper and lower surfaces of the diaphragm, and the periodic aperture as described in the fourth embodiment can be used, or it can be aperiodic. Aperture. Figure 8 takes the periodic aperture as an example. The fifth embodiment is the same as the fourth embodiment, and can also realize three-dimensional information or high-resolution image reconstruction.

綜上所述,本發明具有以下優點:(1) 採用CIS系光二極體5,改善光二極體陣列偵測單元2的光譜響應和光電轉換效率。CIS系光二極體5對於近紅外光波段的吸收與轉換效果尤其佳。(2)以該等導光板11來區分並收集多頻譜訊號,搭配該光二極體陣列偵測單元2來實現大面積多頻譜電磁波檢測。(3)由於光二極體陣列偵測單元2的光電轉換效率佳,使得即使在該受光單元1上配置額外的波長調變單元7(圖5)、相位調變單元8(圖7、8),或於導光板11中添加波長轉換材料71(圖6),依然能維持檢測功能所要求的高敏感度。搭配對於光二極體陣列偵測單元2接收到的光訊號,施以適當的演算法,進而實現三維資訊或是高解析度的影像重建。(4)正因為本發明的受光單元1能收集並分析自該待測物而來的m個頻道的待測光訊號,本發明具有多頻譜電磁波的檢測功能,於生醫檢測上可免於使用螢光劑。In summary, the present invention has the following advantages: (1) The CIS-based photodiode 5 is used to improve the spectral response and photoelectric conversion efficiency of the photodiode array detection unit 2. The CIS-based photodiode 5 has a particularly good absorption and conversion effect for the near-infrared light waveband. (2) The light guide plates 11 are used to distinguish and collect multi-spectral signals, and the photodiode array detection unit 2 is used to realize large-area multi-spectrum electromagnetic wave detection. (3) Since the photodiode array detection unit 2 has good photoelectric conversion efficiency, even if the light receiving unit 1 is equipped with additional wavelength modulation unit 7 (Figure 5), phase modulation unit 8 (Figures 7, 8) , Or adding a wavelength conversion material 71 to the light guide plate 11 (FIG. 6), the high sensitivity required by the detection function can still be maintained. In combination with the optical signal received by the photodiode array detection unit 2, an appropriate algorithm is applied to realize three-dimensional information or high-resolution image reconstruction. (4) Because the light-receiving unit 1 of the present invention can collect and analyze the m-channel light signal to be measured from the object to be measured, the present invention has the detection function of multi-spectrum electromagnetic waves, which can be used in biomedical testing. Fluorescent agent.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.

1:受光單元 11:導光板 111:受光面 112:背面 113:出光面 12:受光部 13:導光部 2:光二極體陣列偵測單元 21:基材 22:感測像素 3:光源單元 4:薄膜電晶體 41:閘極金屬電極 42:第一絕緣層 43:本質半導體通道層 44:汲極金屬電極 45:源極金屬電極 46:汲極接觸介面 47:源極接觸介面 48:第二絕緣層 5:光二極體 50:連接電極 51:正電極 52:吸收層 53:緩衝層 54:負電極 55:入射窗口層 6:儲存電容 61:第一電極 62:第二電極 63:第三絕緣層 7:波長調變單元 71:波長轉換材料 8:相位調變單元 81:透光區 82:遮光區 9:待測物 A:箭頭 B:箭頭

Figure 02_image001
:臨界角1: Light receiving unit 11: Light guide plate 111: Light receiving surface 112: Back 113: Light emitting surface 12: Light receiving part 13: Light guide part 2: Photodiode array detection unit 21: Substrate 22: Sensing pixel 3: Light source unit 4: thin film transistor 41: gate metal electrode 42: first insulating layer 43: intrinsic semiconductor channel layer 44: drain metal electrode 45: source metal electrode 46: drain contact interface 47: source contact interface 48: first Two insulating layer 5: photodiode 50: connecting electrode 51: positive electrode 52: absorbing layer 53: buffer layer 54: negative electrode 55: incident window layer 6: storage capacitor 61: first electrode 62: second electrode 63: first Three insulating layers 7: wavelength modulation unit 71: wavelength conversion material 8: phase modulation unit 81: light-transmitting area 82: light-shielding area 9: object to be measured A: arrow B: arrow
Figure 02_image001
: Critical angle

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是本發明多頻譜電磁波檢測裝置的一第一實施例的一俯視示意圖,圖中假想線用於示意一受光單元的一受光部的範圍; 圖2是該第一實施例的一前視示意圖; 圖3是一類似圖2的示意圖,說明該第一實施例的數個光源單元的其中一個發出初始光(箭頭B)射向一待測物,該待測物再反射檢測光(箭頭A)射向該受光單元; 圖4是一剖視示意圖,說明該第一實施例的一光二極體陣列偵測單元的層疊結構; 圖5是本發明多頻譜電磁波檢測裝置的一第二實施例的一示意圖; 圖6是本發明多頻譜電磁波檢測裝置的一第三實施例的一示意圖; 圖7是本發明多頻譜電磁波檢測裝置的一第四實施例的一示意圖;及 圖8是本發明多頻譜電磁波檢測裝置的一第五實施例的一俯視示意圖。Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: 1 is a schematic top view of a first embodiment of the multi-spectrum electromagnetic wave detection device of the present invention. In the figure, an imaginary line is used to indicate the range of a light-receiving part of a light-receiving unit; Figure 2 is a schematic front view of the first embodiment; Fig. 3 is a schematic diagram similar to Fig. 2 illustrating that one of the several light source units of the first embodiment emits initial light (arrow B) toward an object under test, and the object under test reflects detection light (arrow A) Directed toward the light receiving unit; 4 is a schematic cross-sectional view illustrating the stacked structure of a photodiode array detection unit of the first embodiment; 5 is a schematic diagram of a second embodiment of the multi-spectrum electromagnetic wave detection device of the present invention; 6 is a schematic diagram of a third embodiment of the multi-spectrum electromagnetic wave detection device of the present invention; FIG. 7 is a schematic diagram of a fourth embodiment of the multi-spectrum electromagnetic wave detection device of the present invention; and FIG. 8 is a schematic top view of a fifth embodiment of the multi-spectrum electromagnetic wave detection device of the present invention.

1:受光單元 1: Light receiving unit

11:導光板 11: Light guide plate

111:受光面 111: light-receiving surface

112:背面 112: Back

113:出光面 113: Glossy Surface

12:受光部 12: Light receiving part

13:導光部 13: Light guide

2:光二極體陣列偵測單元 2: Photodiode array detection unit

3:光源單元 3: Light source unit

9:待測物 9: Object to be tested

A:箭頭 A: Arrow

B:箭頭 B: Arrow

θ C :臨界角 θ C : critical angle

Claims (10)

一種多頻譜電磁波檢測裝置,適用於檢測自一待測物而來的數道不同頻譜的待測光,並包含:一受光單元,包括數個上下疊置的導光板,每一該導光板包括一朝上的受光面、一朝下的背面,以及一連接於該受光面與該背面間的出光面,該等導光板分別用於傳導由該待測物來的所述待測光,且所述待測光分別由該等導光板的該等受光面進入該等導光板中,再分別由該等導光板的該等出光面射出;及數個光二極體陣列偵測單元,位於該等導光板的該等出光面,且分別對應該等導光板而上下設置,該等光二極體陣列偵測單元用於檢測經由該等出光面而來的光訊號,每一該光二極體陣列偵測單元包括一基材,以及至少一形成於該基材上的感測像素,該至少一感測像素包括一用於檢測光訊號的光二極體,該光二極體為銅銦硒系光二極體,且由鄰近而遠離該基材依序包括一正電極、一p型半導體製成的吸收層、一n型半導體製成的緩衝層,以及一負電極,該吸收層的材料為CuInxGa(1-x)SeyS(1-y),其中x為0到1之任意實數,y為0到1之任意實數。 A multi-spectrum electromagnetic wave detection device is suitable for detecting several channels of light to be measured with different frequency spectra from an object to be measured, and includes: a light receiving unit including a plurality of light guide plates stacked one above the other, each light guide plate includes a light guide plate An upward light-receiving surface, a downward-facing back surface, and a light-emitting surface connected between the light-receiving surface and the back surface, the light guide plates are respectively used to transmit the light to be measured from the object to be measured, and The light to be measured enters the light guide plates from the light-receiving surfaces of the light guide plates, and then is respectively emitted from the light-emitting surfaces of the light guide plates; and a plurality of photodiode array detection units are located on the light guide plates The light-emitting surfaces are respectively arranged up and down corresponding to the light guide plates. The photodiode array detection units are used to detect the light signals coming through the light-emitting surfaces. Each photodiode array detection unit Comprising a substrate, and at least one sensing pixel formed on the substrate, the at least one sensing pixel includes a photodiode for detecting light signals, and the photodiode is a copper indium selenide photodiode, And it includes a positive electrode, an absorber layer made of p-type semiconductor, a buffer layer made of n-type semiconductor, and a negative electrode, which are adjacent to and far away from the substrate. The absorber layer is made of CuIn x Ga ( 1-x) Se y S (1-y) , where x is any real number from 0 to 1, and y is any real number from 0 to 1. 如請求項1所述的多頻譜電磁波檢測裝置,其中,該受光單元在水平方向上被區分成包括一受光部,以及一連接於該受光部周圍並位於該受光部與該等光二極體陣列偵測單元間的導光部,該受光部與該導光部由該等導光板共同形成,該等待測光由對應於該受光部區域的該等受光面進 入該等導光板中,且該等待測光由該受光部進入該導光部後,在對應於該導光部區域的該等受光面與該等出光面間多次反射後,再經由該等出光面射向該等光二極體陣列偵測單元。 The multi-spectrum electromagnetic wave detection device according to claim 1, wherein the light receiving unit is divided in the horizontal direction to include a light receiving part, and a light receiving part connected around the light receiving part and located between the light receiving part and the light diode arrays The light guide part between the detection units, the light receiving part and the light guide part are formed by the light guide plates together, and the waiting light metering enters from the light receiving surfaces corresponding to the light receiving part area After entering the light guide plates, and the waiting light metering enters the light guide part from the light receiving part, after multiple reflections between the light receiving surfaces and the light emitting surfaces corresponding to the light guide part area, it passes through the The light-emitting surface is directed toward the light-diode array detection units. 如請求項2所述的多頻譜電磁波檢測裝置,還包含一設置於該受光單元的該受光部上,並用於轉換入射而來的光波長的波長調變單元。 The multi-spectrum electromagnetic wave detection device according to claim 2, further comprising a wavelength modulation unit provided on the light receiving part of the light receiving unit and used for converting the wavelength of incident light. 如請求項3所述的多頻譜電磁波檢測裝置,其中,該波長調變單元為波長轉換膜層或濾波片。 The multi-spectrum electromagnetic wave detection device according to claim 3, wherein the wavelength modulation unit is a wavelength conversion film or a filter. 如請求項1所述的多頻譜電磁波檢測裝置,其中,每一該導光板中包含能轉換入射而來的光波長的波長轉換材料。 The multi-spectrum electromagnetic wave detection device according to claim 1, wherein each of the light guide plates includes a wavelength conversion material capable of converting the wavelength of incident light. 如請求項2所述的多頻譜電磁波檢測裝置,還包含一設置於該受光單元的該受光部或該導光部上的相位調變單元,該相位調變單元用於調變入射而來的光相位。 The multi-spectrum electromagnetic wave detection device according to claim 2, further comprising a phase modulation unit arranged on the light receiving part or the light guiding part of the light receiving unit, and the phase modulation unit is used to modulate the incident light Light phase. 如請求項6所述的多頻譜電磁波檢測裝置,其中,該相位調變單元包括數個透光區,以及數個位於該等透光區之間的遮光區。 The multi-spectrum electromagnetic wave detection device according to claim 6, wherein the phase modulation unit includes a plurality of light-transmitting regions, and a plurality of light-shielding regions located between the light-transmitting regions. 如請求項6所述的多頻譜電磁波檢測裝置,其中,該相位調變單元為準直膜(collimator film)、隱私膜(privacy film)、編碼孔徑(coded aperture)、微透鏡陣列、繞射光柵,或微透鏡陣列與繞射光柵的組合。 The multi-spectrum electromagnetic wave detection device according to claim 6, wherein the phase modulation unit is a collimator film, a privacy film, a coded aperture, a microlens array, and a diffraction grating , Or the combination of micro lens array and diffraction grating. 如請求項1所述的多頻譜電磁波檢測裝置,其中,該等導光板依據由上往下的方向,所傳導的所述待測光的頻譜為由低到高。 The multi-spectrum electromagnetic wave detection device according to claim 1, wherein the light guide plates transmit the spectrum of the light to be measured from low to high according to the direction from top to bottom. 如請求項1所述的多頻譜電磁波檢測裝置,還包含一光源單元,該光源單元用於發出數種不同頻譜的檢測光照射該待測物,該待測物接收所述檢測光後形成不同頻譜的所述待測光。 The multi-spectrum electromagnetic wave detection device according to claim 1, further comprising a light source unit, the light source unit is used to emit detection lights of different spectrums to irradiate the object under test, and the object under test forms different detection lights after receiving the detection light. The light to be measured of the spectrum.
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