TWI720826B - Electrochromic device, display apparatus, and manufacturing method of electrochromic device - Google Patents

Abstract

The electrochromic device includes a first substrate, a first transparent electrode layer, a plurality of first bumps, a second substrate, a plurality of second bumps and an electrochromic material. The first transparent electrode layer is on the first substrate. The first bumps are on the first transparent electrode layer and arranged in an array. The second substrate is opposite to the first substrate. The second bumps are on the second transparent electrode layer and arranged in an array. The first bumps and the second bumps are assembled in a staggered manner to form at least one receiving space. The electrochromic material is in the receiving space.

Description

Electrochromic element, display device and manufacturing method of electrochromic element

The present disclosure relates to an electrochromic device, a display device, and a manufacturing method of the electrochromic device.

In recent years, due to the rapid development of Internet channels and smart devices, people are accustomed to using mobile devices (such as mobile phones or laptops) to transmit or absorb information. However, when conducting important business activities in public places, important information on mobile devices may be captured by someone who is interested in them. In view of this, business people usually install a privacy filter that can control the viewing angle on the screen of the mobile device.

However, the privacy film has a grid line problem, which easily causes the user to have visual dizziness or dizziness and nausea. In addition, the grid line problem can also cause the brightness of the mobile device to decrease, which makes the user have a poor user experience. One of the solutions to reduce the grid line problem is to increase the aspect ratio of the grid line of the privacy film. However, it is not easy to completely remove the material between the grid lines when preparing high aspect ratio grid lines. Therefore, there is an urgent need for a method that can solve the aforementioned problems.

The present invention provides an electrochromic element and a display device, which can prevent the first bump and the second bump from being too close to each other if they are disposed on the same substrate, which will cause the photoresist material to have residues on two adjacent ones. Between the first bumps and between two adjacent second bumps.

The invention provides a method for manufacturing an electrochromic element, which can solve the limit of the exposure and development process and provide a first bump and a second bump with a high aspect ratio.

The electrochromic element of the present invention includes a first substrate, a first transparent electrode layer, a plurality of first bumps, a second substrate, a plurality of second bumps, and an electrochromic material. The first transparent electrode layer is located on the first substrate. The plurality of first bumps are located on the first transparent electrode layer and arranged in an array. The second substrate is opposite to the first substrate. The second bumps are located on the second transparent electrode layer and arranged in an array, and the first bumps and the second bumps are arranged in a staggered pair to form at least one accommodating space. The electrochromic material is located in at least one accommodating space.

In an embodiment of the present invention, the above-mentioned first bump contacts the second transparent electrode layer.

In an embodiment of the present invention, the above-mentioned first bumps are not in contact with each other.

In an embodiment of the present invention, the aforementioned second bumps are not in contact with each other.

The display device of the present invention includes the above-mentioned electrochromic element and a display panel. The display panel is located on one side of the electrochromic element.

In an embodiment of the present invention, the above-mentioned display panel includes a thin film transistor substrate. The thin film transistor substrate is located on one side of the electrochromic element. The thin film transistor substrate includes a plurality of sub-pixels, and each sub-pixel includes an active element and a pixel electrode, and the pixel electrode is electrically connected to the active element. The vertical projection of the first bump on the first substrate and the vertical projection of the second bump on the first substrate respectively overlap the vertical projection of each sub-pixel on the first substrate.

In an embodiment of the present invention, the above-mentioned display panel further includes a color filter element and a display medium layer. The display medium layer is located between the thin film transistor substrate and the color filter element. The thin film transistor substrate, the color filter element and the display medium layer are located on the same side of the electrochromic element.

The manufacturing method of the electrochromic element of the present invention includes the following steps. A plurality of first bumps are formed on the first substrate, and the first bumps are arranged in an array. A plurality of second bumps are formed on the second substrate, and the second bumps are arranged in an array. The second substrate is turned upside down, so that the first bump and the second bump are located between the second substrate and a substrate, and the first bump and the second bump are paired with each other to form at least one accommodating space. Fill the electrochromic material in the accommodating space.

In an embodiment of the present invention, the above-mentioned method further includes the following steps. Before forming the first bumps on the first substrate, a first transparent electrode layer is formed on the first substrate. Before forming a plurality of second bumps on the second substrate, a second transparent electrode layer is formed on the second substrate.

In an embodiment of the present invention, the above-mentioned distance between the first bumps is 50 micrometers (μm) to 200 micrometers (μm), and the distance between the second bumps is 50 micrometers (μm) to 200 microns (μm).

Based on the above, in the electrochromic device and the display device of the present invention, since the first bump is located on the first transparent electrode layer of the first substrate, the second bump is located on the second transparent electrode layer of the second substrate, and The first substrate is opposite to the second substrate. In this way, when the exposure and development process has a process limit, the first bump and the second bump with a high aspect ratio can be produced, and it can be avoided that the first bump and the second bump are disposed on the same substrate. The resulting distance is too close to each other, thereby causing the problem that the photoresist material layer has residues between two adjacent first bumps and between two adjacent second bumps respectively after the development process. The first bump of the present invention contacts the second transparent electrode layer. In this way, it is possible to avoid the problem of the drop in the light transmittance of the electrochromic element caused by the electrochromic material flowing between the first bump and the second transparent electrode layer. Similarly, the second bump contacts the first transparent electrode layer, so that it can prevent the electrochromic material from flowing between the second bump and the first transparent electrode layer, which causes the light transmittance of the electrochromic element to decrease. The problem. The first bumps are not in contact with each other, thereby avoiding a decrease in the color change efficiency of the electrochromic material. Similarly, the second bumps are not in contact with each other, thereby avoiding a decrease in the color change efficiency of the electrochromic material.

Fig. 1, Fig. 2, Fig. 3, Fig. 4A, Fig. 5, Fig. 6, Fig. 8A, and Fig. 9A are three-dimensional schematic diagrams of a method of manufacturing an electrochromic device 100 according to an embodiment of the present invention Fig. 4B, Fig. 8B and Fig. 9B are schematic top views of Fig. 4A, Fig. 8A and Fig. 9A, respectively, and Fig. 4C is a schematic cross-sectional view of Fig. 4B along the section line I-I'. Figure 8C is a schematic cross-sectional view of Figure 8B along the line II-II'. Figure 9C is a schematic cross-sectional view of Figure 9B along the section line III-III'. FIG. 10 is a schematic cross-sectional view of a manufacturing method of the electrochromic device 100 according to an embodiment of the present invention.

Please refer to FIG. 1 first. In this embodiment, a first transparent electrode layer 104 is formed on the first substrate 102. The material of the first substrate 102 may be glass, quartz, organic polymer, opaque/reflective material, or other applicable materials. The opaque/reflective material may be conductive materials, wafers, ceramics, or other materials. Applicable materials. In this embodiment, the thickness t102 of the first substrate 102 is 0.1 millimeters (mm) to 0.7 millimeters (mm). For the convenience of description, the first direction D1 and the second direction D2 are shown in FIG. 1, and the first direction D1 and the second direction D2 intersect. In this embodiment, the first direction D1 is substantially perpendicular to the second direction D2, but the invention is not limited thereto.

Next, referring to FIG. 2, a photoresist material layer 106 is formed on the first transparent electrode layer 104. For example, the thickness t106 of the photoresist material layer 106 is 50 micrometers (μm) to 200 micrometers (μm).

Referring to FIG. 3, a photomask 108 is provided on the photoresist material layer 106, and the photoresist material layer 106 is exposed to the photomask 108 by the photomask 108. The photomask 108 includes an opening 110. Light (for example, ultraviolet light) L1 passes through the opening 110 of the photomask 108 and irradiates the photoresist material layer 106. The photoresist material layer 106 that irradiates the light L1 is the exposure portion 106a, which is not illuminated. The photoresist layer 106 of the light L1 is the non-exposed portion 106b. In this embodiment, the photoresist material layer 106 is a negative photoresist as an example, and the exposure portion 106a is irradiated by the light L1 to cause a cross-linking reaction. In other embodiments, the photoresist material layer 106 may be a positive photoresist.

Please refer to FIGS. 4A to 4C. Next, a development process is performed on the photoresist material layer 106 to form a plurality of first bumps 112 on the first transparent electrode layer 104. In other words, the non-exposed portion 106b with a low degree of crosslinking will be washed away, and the exposed portion 106a with a high degree of crosslinking (see FIG. 3) will remain and be equivalent to the first bump 112. The first bump 112 has a high aspect ratio. For example, the aspect ratio of the first bump 112 is 1:1 to 3:1. The first bumps 112 are located on the first transparent electrode layer 104 and are arranged in an array. In this embodiment, the first bumps 112 are arranged in a staggered manner, and the first bumps 112 are not in contact with each other, that is, the non-exposed portion 106b of the photoresist material layer 106 can be completely washed away. In this embodiment, the spacing S1 between the first bumps 112 along the first direction D1 is 50 micrometers (μm) to 200 micrometers (μm). Since the spacing S1 is large enough, the photoresist material layer 106 can be prevented from being After the development process, a residue (ie, the non-exposed portion 106b) is located on the first transparent electrode layer 104 between two adjacent first bumps 112. In detail, it is possible to prevent the photoresist material layer 106 from remaining between two adjacent first bumps 112 along the first direction D1 after the development process.

Next, referring to FIG. 5, a second transparent electrode layer 116 is formed on the second substrate 114. The method of forming the second transparent electrode layer 116 is, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), vapor deposition (VTE), sputtering (SPT), or a combination thereof. In this embodiment, the thickness t114 of the second substrate 114 is 0.1 millimeters (mm) to 0.7 millimeters (mm).

Next, referring to FIG. 6, a photoresist material layer 118 is formed on the second transparent electrode layer 116. The method of forming the photoresist layer 118 is, for example, a spin coating process. In this embodiment, the thickness t118 of the photoresist layer 118 is 0.1 millimeter (mm) to 0.2 micrometer (mm).

Please refer to FIG. 7, a photomask 120 is provided on the photoresist material layer 118, and the photoresist material layer 118 is exposed by the photomask 120. The photomask 120 includes an opening 122. Light (such as ultraviolet light) L2 passes through the opening 122 of the photomask 120 and irradiates the photoresist material layer 118. The photoresist material layer 118 that irradiates the light L2 is the exposure portion 118a, which is not illuminated. The photoresist layer 118 of the light L2 is the non-exposed portion 118b. In this embodiment, the photoresist material layer 118 is a negative photoresist as an example, and the exposure portion 118a is irradiated by the light L2 to cause a cross-linking reaction. In other embodiments, the photoresist material layer 118 may be a positive photoresist.

Please refer to FIG. 8A to FIG. 8C. Then, a development process is performed on the photoresist material layer 118 to form a plurality of second bumps 124 on the second transparent electrode layer 116. In other words, the non-exposed portion 118b with a low degree of crosslinking will be washed away, and the exposed portion 118a with a high degree of crosslinking (see FIG. 7) will remain and be equivalent to the second bump 124. For the convenience of description, FIGS. 8A to 8C show the first direction D1 and the second direction D2.

The second bump 124 has a high aspect ratio. For example, the aspect ratio of the second bump 124 is 1:1 to 3:1. The second bumps 124 are located on the second transparent electrode layer 116 and are arranged in an array. In this embodiment, the second bumps 124 are arranged in a staggered manner, and the second bumps 124 are not in contact with each other, that is, the non-exposed portion 118b of the photoresist material layer 118 can be completely washed away. In this embodiment, the spacing S2 between the second bumps 124 is 50 micrometers (μm) to 200 micrometers (μm). Since the spacing S2 is large enough, the photoresist material layer 118 can be prevented from having residues after the development process. (Ie, the non-exposed portion 118b) is located on the second transparent electrode layer 116 between two adjacent second bumps 124. For example, it can prevent the photoresist material layer 118 from remaining on the second transparent electrode layer 116 between two adjacent second bumps 124 along the first direction D1 and along the second direction D2 after the development process. . In this embodiment, the top view of the first bump 112 and the second bump 124 is rectangular, but the present invention is not limited thereto. In other embodiments, the top view shapes of the first bump 112 and the second bump 124 may be triangles, rhombuses, parallelograms, trapezoids, pentagons, or other polygons. The top view shapes of the first bump 112 and the second bump 124 may also be circular or irregular.

Next, referring to FIGS. 9A to 9C, the second substrate 114 is turned upside down so that the second substrate 114 is opposite to the first substrate 102, that is, the first bump 112 and the second bump 124 are located on the second substrate Between 114 and the first substrate 102, the first bump 112 and the second bump 124 are offset in pairs to form at least one accommodating space SP. For the convenience of description, the second substrate 114 and the second transparent electrode layer 116 are omitted in FIG. 9B.

Next, referring to Fig. 10, fill the electrochromic material 126 in the accommodating space SP (see Fig. 9C). For example, the electrochromic material 126 is located between two adjacent first bumps 112 and second bumps 124. In this way, the electrochromic device 100 of this embodiment is completed. Since the first bump 112 is located on the first transparent electrode layer 104 of the first substrate 102, the second bump 124 is located on the second transparent electrode layer 116 of the second substrate 114, and the first substrate 102 is opposite to the second substrate 114 . In this way, when the exposure and development process has a process limit, the first bump 112 and the second bump 124 with a high aspect ratio can be fabricated, and the first bump 112 and the second bump 124 can be prevented from being disposed on The distance between each other caused by the same substrate is too close, causing the photoresist material layer 106 (see Figure 2) and the photoresist material layer 118 (see Figure 6) to have residues on the two adjacent ones after the development process. Problems between the first bumps 112 and between two adjacent second bumps 124.

In this embodiment, the first bump 112 contacts the second transparent electrode layer 116. In this way, it is possible to avoid the problem that the electrochromic material 126 flows between the first bump 112 and the second transparent electrode layer 116 and the light transmittance of the electrochromic device 100 decreases. Similarly, the second bumps 124 contact the first transparent electrode layer 104. In this way, the electrochromic element 100 caused by the electrochromic material 126 flowing between the second bumps 124 and the first transparent electrode layer 104 can be avoided. The problem of decreased light transmittance. In this embodiment, the first bumps 112 are not in contact with each other, so as to prevent the color change efficiency of the electrochromic material 126 from being reduced. Similarly, the second bumps 124 are not in contact with each other, thereby avoiding the reduction of the color change efficiency of the electrochromic material 126.

FIG. 11A is a schematic cross-sectional view of a display device 10 according to an embodiment of the present invention. Please refer to FIG. 11A. The display device 10 includes an electrochromic element 100 and a display panel 200. The display panel 200 is located on one side of the electrochromic element 100 .

The display panel 200 includes a thin film transistor substrate 202, and the thin film transistor substrate 202 is located on one side of the electrochromic element 100. The thin film transistor substrate 202 includes a plurality of sub-pixels PX and a third substrate 204, and the sub-pixels PX are disposed on the third substrate 204. Fig. 11B is a schematic diagram of the circuit of area R in Fig. 11A. Please refer to Fig. 11A and Fig. 11B together. Each sub-pixel PX includes an active element T and a pixel electrode PE, and a pixel electrode PE and an active element T The active component T is connected to the signal line DL and the scan line SL. The type of the active device T may include bottom gate transistor, top gate transistor, or other suitable types, or a combination of the above, and the semiconductor material of the transistor includes amorphous silicon, polycrystalline silicon, single crystal silicon, microcrystalline silicon , Nanocrystalline silicon, oxide semiconductor materials or other suitable types, or a combination of the above.

When the electrochromic element 100 is in the privacy mode, the electrochromic material 126 is in a light-shielding state. In this embodiment, the vertical projection of the first bump 112 on the first substrate 102 and the vertical projection of the second bump 124 on the first substrate 102 respectively overlap the vertical projection of each sub-pixel PX on the first substrate 102. In this way, the brightness of the display panel 200 will not be excessively reduced due to the electrochromic element 100.

The display panel 200 further includes a color filter element 206 and a display medium layer 208. The display medium layer 208 is located between the thin film transistor substrate 202 and the color filter element 206. In this embodiment, the display medium layer 208 is liquid crystal. The thin film transistor substrate 202, the color filter element 206 and the display medium layer 208 are located on the same side of the electrochromic element 100. The scan line SL controls the active element T and drives the display medium layer 208 via the pixel electrode PE. The color filter element 206 includes a fourth substrate 210 and a plurality of filter patterns 212 (such as a red filter pattern, a blue filter pattern, and a green filter pattern) and a light shielding pattern 214 disposed on the fourth substrate 210 to make The display panel 200 can provide a color image, but the invention is not limited to this. In this embodiment, the light shielding pattern 214 is a black matrix and is disposed between the filter patterns 212. The light-shielding pattern 214 overlaps the accommodating space SP formed by the first bump 112 and the second bump 124. In this embodiment, the thickness t210 of the fourth substrate 210 is 0.1 millimeters (mm) to 0.7 millimeters (mm), and the thickness t214 of the light shielding pattern 214 is 0.9 micrometers (μm) to 1.5 micrometers (μm). The material of the third substrate 204 and the fourth substrate 210 can be similar to the material of the first substrate 102, which will not be repeated here.

The display device 10 further includes a backlight module 300, and the display panel 200 is located between the backlight module 300 and the electrochromic element 100. The backlight module 300 is used to provide a surface light source, and the light L3 emitted by the surface light source sequentially passes through the display panel 200 and the electrochromic element 100 to provide a display image. On the other hand, in this embodiment, the backlight module 300 may be an edge-type backlight module, a direct-type backlight module, or other suitable forms of backlight module.

FIG. 11C is a schematic cross-sectional view of a display device 10a according to another embodiment of the invention. The display device 10a of this embodiment is similar to the display device 10 of the previous embodiment, except that the electrochromic element 100 is located between the backlight module 300 and the display panel 200, and the display device 10a further includes an optical film 216, an optical film 216 It is arranged between the electrochromic element 100 and the display panel 200. In detail, the optical film 216 is disposed between the electrochromic device 100 and the thin film transistor substrate 202. For example, the optical film 216 may be a Prism film, a dual brightness enhancement film (DBEF) or other optical films. By disposing the optical film 216 between the electrochromic device 100 and the display panel 200, interference fringes (Moiré mura) caused by the periodic structure of the electrochromic device 100 and the periodic structure of the display panel 200 can be avoided. For example, interference fringes caused by the period of the filter pattern 212 similar to the period of the combination of the first bump 112 and the second bump 124 can be avoided.

12 to 15 are schematic cross-sectional views of a method of manufacturing the display device 20 according to an embodiment of the present invention. Please refer to FIG. 12 first, a carrier board 218 is provided, and a first substrate 102a is formed on the carrier board 218. The method of forming the first substrate 102a is, for example, a coating method. In this embodiment, the first substrate 102a is a flexible substrate. For example, the material of the first substrate 102a is an organic polymer, such as polyamide (PA), polyimide (PI), poly (methyl methacrylate) (PMMA) , Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), fiber reinforced plastics (FRP), polyetheretherketone (polyetheretherketone, PEEK), epoxy resin or other suitable materials or a combination of at least two of the foregoing, but the present invention is not limited thereto. In this embodiment, the thickness t102a of the first substrate 102a is 10 micrometers (μm) to 20 micrometers (μm), and the thickness t102a of the first substrate 102a is thin enough to meet the needs of different products and increase application flexibility.

Next, referring to FIG. 13, the first transparent electrode layer 104 and the first bump 112 are sequentially formed on the first substrate 102a, and the second transparent electrode layer 116 and the second bump 124 are sequentially formed on the first substrate 102a. The second substrate 114 is turned upside down, so that the first bump 112 is opposite to the second bump 124. The method of forming the first transparent electrode layer 104, the first bump 112, the second transparent electrode layer 116, and the second bump 124 is similar to that of FIG. 1 to FIG. 8C. Only the differences between the two are discussed below, which are the same or similar. I will not repeat it here.

Next, referring to FIG. 14, the first bump 112 and the second bump 124 are shifted to form at least one accommodating space SP, and then the electrochromic material 126 is filled in the accommodating space SP.

Next, referring to FIG. 15, the carrier 218 and the first substrate 102a are separated from each other along the direction D3, so that the bottom surface of the first substrate 102a is exposed. In this way, the electrochromic device 100a of this embodiment is completed. The separation method is, for example, laser lift-off (LLO) or other suitable methods. Since the first bump 112 is located on the first transparent electrode layer 104 of the first substrate 102, the second bump 124 is located on the second transparent electrode layer 116 of the second substrate 114, and the first substrate 102 is opposite to the second substrate 114 , The first bump 112 and the second bump 124 are misaligned in pairs. When the first substrate 102a is a flexible substrate (or a thin-thickness substrate), the discoloration of the electrochromic material 126 caused by insufficient structural strength (or stiffness) of the electrochromic element 100a can be avoided The problem of unevenness.

Next, referring to Figure 16, the electrochromic element 100a is aligned and attached to the display panel 200, and the backlight module 300 is arranged on the side of the display panel 200 facing away from the electrochromic element 100a. In this way, it is completed The display device 20 of this embodiment. The backlight module 300 is used to provide a surface light source, and the light L3 emitted by the surface light source sequentially passes through the display panel 200 and the electrochromic element 100a to provide a display image.

In summary, the first bumps of at least one embodiment of the present invention are located on the first transparent electrode layer of the first substrate, the second bumps are located on the second transparent electrode layer of the second substrate, and the first substrate and the second substrate The two substrates are opposite. In this way, when the exposure and development process has a process limit, the first bump and the second bump with a high aspect ratio can be produced, and it can be avoided that the first bump and the second bump are disposed on the same substrate. The resulting distance is too close to each other, thereby causing the problem that the photoresist material layer has residues between two adjacent first bumps or between two adjacent second bumps after the development process.

10, 10a, 20: display device 10a: Display device 100, 100a: Electrochromic element 102, 102a: first substrate 104: first transparent electrode layer 106: photoresist material layer 106a: Exposure Department 106b: Non-exposure part 108: Mask 110: opening 112: The first bump 114: second substrate 116: second transparent electrode layer 118: photoresist layer 118a: Exposure Department 118b: Non-exposure part 120: Mask 122: open 124: second bump 126: Electrochromic materials 200: display panel 202: Thin film transistor substrate 204: third substrate 206: Color filter element 208: display medium layer 210: fourth substrate 212: filter pattern 214: Shading pattern 216: Optical Film 218: Carrier Board 300: Backlight module D1: First direction D2: second direction D3: Direction DL: signal line I-I’, II-II’, III-III’: Sectional line L1, L2, L3: light PX: Sub-pixel PE: pixel electrode R: area S1, S2: Spacing SL: scan line SP: housing space T: Active component t102, t102a, t106: thickness t114, t118, t210, t214: thickness

Read the following detailed description and match the corresponding diagrams to understand many aspects of this disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the features can be increased or decreased arbitrarily to facilitate the clarity of the discussion. Figure 1, Figure 2, Figure 3, Figure 4A, Figure 5, Figure 6, Figure 7, Figure 8A, and Figure 9A show a method of manufacturing an electrochromic device according to an embodiment of the present invention The three-dimensional schematic diagram. Fig. 4B, Fig. 8B and Fig. 9B are schematic top views of Fig. 4A, Fig. 8A and Fig. 9A, respectively. Figure 4C is a schematic cross-sectional view of Figure 4B along the section line I-I'. Figure 8C is a schematic cross-sectional view of Figure 8B along the line II-II'. Figure 9C is a schematic cross-sectional view of Figure 9B along the section line III-III'. FIG. 10 is a schematic cross-sectional view of a method of manufacturing an electrochromic device according to an embodiment of the present invention. FIG. 11A is a schematic cross-sectional view of a display device according to an embodiment of the invention. Fig. 11B is a schematic circuit diagram of area R in Fig. 11A. FIG. 11C is a schematic cross-sectional view of a display device according to another embodiment of the invention. 12 to 16 are schematic cross-sectional views of a method of manufacturing a display device according to an embodiment of the present invention.

Domestic deposit information (please note in the order of deposit institution, date and number) no Foreign hosting information (please note in the order of hosting country, institution, date, and number) no

100: Electrochromic element

102: first substrate

104: first transparent electrode layer

112: The first bump

114: second substrate

116: second transparent electrode layer

124: second bump

126: Electrochromic materials

D1: First direction

Claims (10)

An electrochromic element includes: a first substrate; a first transparent electrode layer on the first substrate; a plurality of first bumps on the first transparent electrode layer and arranged in an array; a second The substrate is opposite to the first substrate; a second transparent electrode layer is located on the second substrate; a plurality of second bumps are located on the second transparent electrode layer and are arranged in an array, the first bumps and The second bumps are arranged in pairs in a first direction and a second direction to form at least one accommodating space, the first direction intersects the second direction; and an electrochromic material , Located in the at least one accommodating space. The electrochromic device according to claim 1, wherein the first bumps contact the second transparent electrode layer. The electrochromic device according to claim 1, wherein the first bumps are not in contact with each other. The electrochromic device according to claim 3, wherein the second bumps are not in contact with each other. A display device includes: The electrochromic element as described in any one of claims 1 to 4; and a display panel located on one side of the electrochromic element. The display device according to claim 5, wherein the display panel includes a thin film transistor substrate located on one side of the electrochromic element, the thin film transistor substrate includes a plurality of sub-pixels, and each sub-pixel includes a Active device and a pixel electrode, the pixel electrode is electrically connected to the active device, wherein the vertical projection of the first bumps on the first substrate and the vertical projection of the second bumps on the first substrate They are overlapped with the vertical projections of the sub-pixels on the first substrate. The display device according to claim 6, wherein the display panel further includes: a color filter element; and a display medium layer located between the thin film transistor substrate and the color filter element, wherein the thin film transistor substrate , The color filter element and the display medium layer are located on the same side of the electrochromic element. A manufacturing method of an electrochromic element includes: forming a plurality of first bumps on a first substrate, wherein the first bumps are arranged in an array; forming a plurality of second bumps on a second substrate, The second bumps are arranged in an array; The second substrate is turned upside down, so that the first bumps and the second bumps are located between the second substrate and the first substrate, and the first bumps and the second bumps are on a first substrate. Both in one direction and in a second direction are mutually offset pairs to form at least one accommodating space, the first direction intersects the second direction; and an electrochromic material is filled in the accommodating space. The method according to claim 8, further comprising: forming a first transparent electrode layer on the first substrate before forming the first bumps on the first substrate; and forming a plurality of second bumps Before the block is placed on a second substrate, a second transparent electrode layer is formed on the second substrate. The method according to claim 8, wherein the distance between each of the first bumps is 50 μm to 200 μm, and the distance between each of the second bumps is 50 μm to 200 μm.

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