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TWI715466B - Molybdenum alloy target material and manufacturing method thereof - Google Patents

Molybdenum alloy target material and manufacturing method thereof Download PDF

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TWI715466B
TWI715466B TW109108863A TW109108863A TWI715466B TW I715466 B TWI715466 B TW I715466B TW 109108863 A TW109108863 A TW 109108863A TW 109108863 A TW109108863 A TW 109108863A TW I715466 B TWI715466 B TW I715466B
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target material
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TW202035752A (en
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青木大輔
福岡淳
熊谷卓哉
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日商日立金屬股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/045Alloys based on refractory metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

本發明提供一種鉬合金靶材,除了抑制卡緊或接合等處理中的靶材的變形或切削工具的刀片的磨損或破損之外,亦可同時達成抑制濺鍍時的異常放電。一種鉬合金靶材,含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,剩餘部分包含Mo及不可避免的雜質,維氏硬度為340 HV~450 HV,在9點測定點進行了測定的維氏硬度的標準偏差為20 HV以下。The present invention provides a molybdenum alloy target material, which not only suppresses the deformation of the target material or the wear or breakage of the blade of a cutting tool during processing such as clamping or joining, but also suppresses abnormal discharge during sputtering. A molybdenum alloy target material containing Ni at 10 at% to 49 at %, Ti at 1 at% to 30 at %, and the total amount of Ni and Ti is 50 at% or less, and the remainder contains Mo and unavoidable impurities, The Vickers hardness is 340 HV to 450 HV, and the standard deviation of the Vickers hardness measured at 9 measuring points is 20 HV or less.

Description

鉬合金靶材及其製造方法Molybdenum alloy target material and manufacturing method thereof

本發明是有關於一種用於形成例如電子零件用電極或配線薄膜的鉬(Mo)合金靶材及其製造方法。 The present invention relates to a molybdenum (Mo) alloy target used for forming electrodes or wiring films for electronic parts, for example, and a manufacturing method thereof.

在電泳型顯示器等平面顯示裝置(平板顯示器、Flat Panel Display:以下稱為FPD)、各種半導體元件、薄膜感測器、磁頭等薄膜電子零件中,需要具備低電阻值(以下,亦稱為「低電阻」)的配線薄膜。例如,FPD中伴隨著大畫面、高精細、高速響應化,對其配線薄膜要求低電阻化。另外,近年來,已開發出對FPD賦予操作性的觸控面板或使用了樹脂基板的可撓性的FPD等新產品。 In flat display devices such as electrophoretic displays (flat panel displays, flat panel displays: hereinafter referred to as FPD), various semiconductor components, thin-film sensors, magnetic heads, and other thin-film electronic components, low resistance values (hereinafter, also referred to as " "Low resistance") wiring film. For example, in FPD, along with large screen, high definition, and high-speed response, low resistance of its wiring film is required. In addition, in recent years, new products such as touch panels that impart operability to FPDs or flexible FPDs using resin substrates have been developed.

作為FPD的驅動元件使用的薄膜電晶體(Thin Film Transistor:以下稱為TFT)的配線薄膜需要低電阻化,正在研究將配線材料從先前的Al變更為電阻更低的Cu。 The thin film transistor (Thin Film Transistor: hereinafter referred to as TFT) used as a driving element of the FPD needs to be low in resistance, and studies are underway to change the wiring material from Al to Cu, which has a lower resistance.

目前,TFT使用非晶Si半導體膜,若作為配線膜的Cu與Si直接接觸,則藉由TFT製造過程中的加熱步驟而發生熱擴散,從而使TFT的特性惡化。因此,使用在Cu與Si之間將耐熱性優異的Mo或Mo合金製成阻擋膜來作為覆蓋膜的積層配線膜。 At present, the TFT uses an amorphous Si semiconductor film. If Cu and Si as a wiring film are in direct contact, thermal diffusion occurs during the heating step in the TFT manufacturing process, thereby deteriorating the characteristics of the TFT. Therefore, a build-up wiring film in which Mo or Mo alloy having excellent heat resistance is used as a barrier film between Cu and Si is used as a cover film.

另外,從迄今為止的非晶Si半導體膜,進行了使用可進一步實現高速響應的氧化物的透明半導體膜的應用研究,對於 該些氧化物半導體的配線薄膜,亦研究了具有積層有包含Cu的配線膜、以及包含Mo或Mo合金的基底膜或覆蓋膜的結構的積層配線膜。因此,用於形成該些積層配線膜的包含Mo合金的薄膜的需求提高。 In addition, from the conventional amorphous Si semiconductor films, the application research of transparent semiconductor films using oxides that can further achieve high-speed response has been conducted. These oxide semiconductor wiring films have also been examined for a build-up wiring film having a structure in which a wiring film containing Cu and a base film or cover film containing Mo or Mo alloy are laminated. Therefore, the demand for thin films containing Mo alloys for forming these multilayer wiring films has increased.

而且,作為具有高耐濕性且適合於移動設備或車載設備的Mo合金薄膜,提出了Mo-Ni-Ti合金。 Furthermore, as a Mo alloy thin film having high moisture resistance and suitable for mobile devices or in-vehicle devices, Mo-Ni-Ti alloys have been proposed.

另一方面,作為形成所述Mo合金薄膜的方法,最佳的是使用了濺鍍靶材(以下,亦簡稱為「靶材」)的濺鍍法。濺鍍法為物理蒸鍍法之一,與其他真空蒸鍍或離子鍍相比為可大面積穩定地形成Mo合金薄膜的方法,並且為即使是如上所述添加元素多的合金,亦可獲得組成變動少的優異的Mo合金薄膜的有效方法。 On the other hand, as a method of forming the Mo alloy thin film, a sputtering method using a sputtering target (hereinafter, also simply referred to as "target") is the most preferable. The sputtering method is one of the physical vapor deposition methods. Compared with other vacuum vapor deposition or ion plating, it is a method that can form a large area of Mo alloy thin film stably, and it can be obtained even if it is an alloy with a large amount of added elements as described above. An effective method for excellent Mo alloy thin films with little composition variation.

而且,作為獲得包含所述Mo-Ni-Ti合金的靶材的方法,例如在專利文獻1中提出了對燒結體實施機械加工的方法,所述燒結體是對混合有Mo粉末與一種以上的Ni合金粉末或者混合有Mo粉末、Ni合金粉末與Ti粉末的混合粉末進行加壓燒結而成。 Moreover, as a method of obtaining a target material containing the Mo-Ni-Ti alloy, for example, Patent Document 1 proposes a method of machining a sintered body that is mixed with Mo powder and one or more kinds of Ni alloy powder or a mixed powder of Mo powder, Ni alloy powder and Ti powder are pressure-sintered.

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2014-177696號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-177696

若利用熱等靜壓(Hot Isostatic Pressing)(以下稱為「HIP」)對專利文獻1所揭示的混合有Mo粉末、Ni合金粉末與Ti粉末的 混合粉末進行加壓燒結來製作靶材,則所述靶材中有時存在局部的低硬度部位。因此,在將靶材機械加工成規定的形狀尺寸時的卡緊或接合等處理中,有時靶材主體會發生變形。 If Hot Isostatic Pressing (hereinafter referred to as "HIP") is used to compare the mixture of Mo powder, Ni alloy powder and Ti powder disclosed in Patent Document 1 The mixed powder is subjected to pressure sintering to produce a target, and there may be local low-hardness sites in the target. Therefore, in processes such as clamping or joining when machining the target material into a predetermined shape and size, the target body may be deformed.

另外,Mo-Ni-Ti合金是在機械加工時發生裂紋、缺口、脫落的可能性高的所謂的難切削材料,而且若靶材中存在局部的高硬度的部位,則會導致切削工具的刀片的磨損或破損,所得的靶材的表面粗糙度變大,或者根據情況有時會使靶材主體破損。 In addition, Mo-Ni-Ti alloy is a so-called difficult-to-cut material that has a high possibility of cracking, chipping, and falling off during machining. Moreover, if there are local high hardness parts in the target material, it will cause the cutting tool blade The abrasion or damage of the target material may increase the surface roughness of the target material obtained, or the target body may be damaged depending on the situation.

另外,若在靶材的濺鍍面的中央部的侵蝕區域中存在局部的低硬度的部位,則僅低硬度的部位殘存或脫落,藉此侵蝕區域的表面粗糙度變粗糙,容易成為濺鍍時的異常放電的起點。 In addition, if there is a local low-hardness site in the erosion area at the center of the sputtering surface of the target, only the low-hardness site remains or falls off. This causes the surface roughness of the erosion area to become rough and easily becomes sputtering. The starting point of the abnormal discharge at the time.

本發明的目的在於提供一種Mo合金靶材,除了抑制卡緊或接合等處理中的靶材的變形或切削工具的刀片的磨損或破損之外,亦可同時達成抑制濺鍍時的異常放電。 The object of the present invention is to provide a Mo alloy target material that can suppress abnormal discharge during sputtering in addition to suppressing deformation of the target material during chucking or joining, or wear or breakage of cutting tool blades.

本發明的Mo合金靶材含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,剩餘部分包含Mo及不可避免的雜質,維氏硬度為340HV~450HV,在9點測定點進行了測定的維氏硬度的標準偏差為20HV以下。 The Mo alloy target of the present invention contains 10 atomic% to 49 atomic% of Ni, 1 atomic% to 30 atomic% of Ti, and the total amount of Ni and Ti is 50 atomic% or less, and the remainder contains Mo and unavoidable impurities , Vickers hardness is 340HV~450HV, and the standard deviation of Vickers hardness measured at 9 points is 20HV or less.

本發明的Mo合金靶材可藉由如下製造方法獲得,所述製造方法包括:以含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,剩餘部分包 含Mo及不可避免的雜質的方式,混合Mo粉末、NiMo合金粉末與Ti粉末而獲得混合粉末的步驟;在常溫下對所述混合粉末進行加壓而獲得成形體的步驟;以及對所述成形體進行加壓燒結而獲得燒結體的步驟。 The Mo alloy target of the present invention can be obtained by the following manufacturing method, the manufacturing method includes: containing 10 atomic% to 49 atomic% of Ni, 1 atomic% to 30 atomic% of Ti, and the total amount of Ni and Ti Less than 50 atomic%, the remainder includes A step of mixing Mo powder, NiMo alloy powder and Ti powder to obtain a mixed powder in a manner containing Mo and unavoidable impurities; a step of pressing the mixed powder at room temperature to obtain a molded body; and The step of pressure sintering the body to obtain a sintered body.

本發明可提供調整了維氏硬度的Mo合金靶材。藉此可期待可抑制卡緊或接合等處理中的靶材的變形或切削工具的刀片的磨損或破損之外,亦同時達成抑制濺鍍時的異常放電。因此,成為所述例如對製造FPD等有用的技術。 The invention can provide a Mo alloy target material with adjusted Vickers hardness. This is expected to be able to suppress the deformation of the target material during processing such as chucking or joining, or the wear or breakage of the blade of the cutting tool, while also suppressing abnormal discharge during sputtering. Therefore, it becomes such a useful technique for manufacturing FPDs.

圖1是本發明例1的靶材的濺鍍面上的光學顯微鏡觀察照片。 Fig. 1 is an optical microscope observation photograph of the sputtering surface of a target of Example 1 of the present invention.

圖2是比較例的靶材的濺鍍面上的光學顯微鏡觀察照片。 Fig. 2 is an optical microscope observation photograph of the sputtering surface of a target of a comparative example.

關於本發明的靶材,日本工業標準(Japanese Industrial Standards,JIS)Z 2244中規定的維氏硬度為340HV~450HV的範圍內,在任意的9點測定點進行了測定的維氏硬度的標準偏差為20HV以下。本發明的靶材藉由將維氏硬度設為特定範圍並減小其偏差(標準偏差),可在機械加工中的卡緊或接合等處理中抑制靶材主體的變形。而且,本發明的實施形態的靶材較佳為在任意的9點測定點進行了測定的維氏硬度的標準偏差為17HV以下。 Regarding the target material of the present invention, the Vickers hardness specified in Japanese Industrial Standards (JIS) Z 2244 is within the range of 340HV to 450HV, and the standard deviation of the Vickers hardness measured at any 9 measurement points Below 20HV. In the target of the present invention, by setting the Vickers hardness to a specific range and reducing the deviation (standard deviation), it is possible to suppress the deformation of the target body during processing such as clamping or joining in machining. Furthermore, it is preferable that the target material of the embodiment of the present invention has a standard deviation of the Vickers hardness measured at any 9 measurement points of 17 HV or less.

另外,本發明的靶材中,藉由將維氏硬度調整為特定範 圍,可抑制在例如銑床或車床等的刀片上生成切屑瘤。即,本發明的靶材可抑制伴隨著切削加工的進行而刀片的切入量隨著切屑瘤的成長而逐漸變大,在切削開始時與切削結束時可減小靶材的尺寸差,除此以外亦可抑制伴隨著切屑瘤的剝離而引起的刀片的破損。 In addition, in the target material of the present invention, by adjusting the Vickers hardness to a specific range It can suppress the formation of cutting edge on the blades such as milling machines or lathes. That is, the target material of the present invention can prevent the cutting amount of the blade from gradually increasing as the cutting edge grows as the cutting process progresses, and can reduce the size difference between the target material at the beginning of cutting and the end of cutting, in addition to this In addition, the breakage of the blade caused by the peeling of the cutting edge can be suppressed.

另一方面,若在靶材的濺鍍面的中央部的侵蝕區域中存在例如由Mo矩陣相或MoTi相等構成的局部低硬度的部位,則有時僅低硬度的部位殘存或脫落,靶材的侵蝕區域的表面變粗糙,容易成為濺鍍時的異常放電的起點。因此,使本發明的靶材的維氏硬度為340HV以上。而且,基於與所述同樣的理由,本發明的實施形態的靶材較佳為使維氏硬度為345HV以上。 On the other hand, if there is a local low-hardness site composed of Mo matrix phase or MoTi in the erosion area at the center of the sputtering surface of the target, only the low-hardness site may remain or fall off. The surface of the eroded area becomes rough and easily becomes the starting point of abnormal discharge during sputtering. Therefore, the Vickers hardness of the target material of the present invention is 340 HV or more. Furthermore, for the same reason as described above, the target material of the embodiment of the present invention preferably has a Vickers hardness of 345 HV or more.

本發明的靶材藉由使維氏硬度為450HV以下,可抑制例如銑床或車床等的刀片的磨損量。即,本發明的靶材可抑制伴隨著切削加工的進行而刀片的切入量隨著刀片的磨損而逐漸變小且在切削開始時與切削結束時靶材的尺寸差增大,除此以外亦可抑刀片的破損。 In the target material of the present invention, the Vickers hardness is 450 HV or less, so that, for example, the wear amount of the blade of a milling machine or a lathe can be suppressed. That is, the target material of the present invention can suppress that the cutting amount of the blade gradually decreases with the wear of the blade as the cutting process progresses, and the size difference between the target material at the start of cutting and the end of the cutting increases, among other things It can restrain the damage of the blade.

另外,本發明的靶材藉由使維氏硬度為450HV以下,除了對切削機械卡緊之外,在與背板或背管接合時的處理等中可抑制靶材主體的破損。而且,基於與所述同樣的理由,本發明的實施形態的靶材較佳為使維氏硬度為445HV以下。 In addition, by setting the Vickers hardness of the target material of the present invention to 450 HV or less, in addition to clamping the cutting machine, damage to the target body can be suppressed during processing when joining with a backing plate or a backing tube. Furthermore, for the same reason as described above, the target material of the embodiment of the present invention preferably has a Vickers hardness of 445 HV or less.

關於本發明中所述的維氏硬度,就除了抑制所述靶材的變形或切削工具的刀片的磨損或破損之外抑制濺鍍時的異常放電 的觀點而言,在靶材的濺鍍面的中心附近的1.5mm見方中,在任意的9點進行測定。此時,負荷為9.8N,加壓時間為10秒。 Regarding the Vickers hardness in the present invention, in addition to suppressing the deformation of the target material or the wear or breakage of the blade of the cutting tool, the abnormal discharge during sputtering is suppressed From the viewpoint of, the measurement is performed at arbitrary 9 points in a 1.5 mm square near the center of the sputtering surface of the target. At this time, the load was 9.8N, and the pressure time was 10 seconds.

而且,本發明的靶材是指在所述條件下測定的維氏硬度為340HV~450HV的範圍內,在所述9點測定點進行了測定的維氏硬度的標準偏差為20HV以下。 Furthermore, the target material of the present invention means that the Vickers hardness measured under the above conditions is in the range of 340 HV to 450 HV, and the standard deviation of the Vickers hardness measured at the 9 measurement points is 20 HV or less.

另外,就使維氏硬度為340HV~450HV的觀點而言,本發明的實施形態的靶材較佳為由Mo-Ni-Ti合金相構成。 In addition, from the viewpoint of setting the Vickers hardness to 340 HV to 450 HV, the target material of the embodiment of the present invention is preferably composed of a Mo-Ni-Ti alloy phase.

而且,本發明的靶材具有如下組成:含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,並且所述Ni、所述Ti與Mo的合計為100原子%且包含不可避免的雜質。Ni及Ti的含量規定為不會顯著損害密接,性、耐熱性、耐濕性的範圍。 Furthermore, the target material of the present invention has the following composition: containing 10 atomic% to 49 atomic% of Ni, 1 atomic% to 30 atomic% of Ti, and the total amount of Ni and Ti is 50 atomic% or less, and the Ni, The total of Ti and Mo is 100 atomic% and contains unavoidable impurities. The content of Ni and Ti is defined as a range that does not significantly impair adhesion, resistance, heat resistance, and moisture resistance.

藉由使Ni的含量為10原子%以上,可獲得氧化抑制效果。另外,Ni與Mo相比,是容易向Cu或Al熱擴散的元素,有時會增加電阻值。因此,使Ni的含量為49原子%以下。另外,基於與所述同樣的理由,Ni的含量較佳為25原子%以下,更佳為20原子%以下。 By setting the Ni content to 10 atomic% or more, an oxidation inhibitory effect can be obtained. In addition, compared with Mo, Ni is an element that is easily thermally diffused into Cu or Al, and may increase the resistance value. Therefore, the content of Ni is set to 49 atomic% or less. In addition, for the same reason as described above, the content of Ni is preferably 25 at% or less, more preferably 20 at% or less.

藉由使Ti的含量為1原子%以上,可提高耐濕性。另外,藉由使Ti的含量為30原子%以下,可提高蝕刻性。另外,基於與所述同樣的理由,Ti的含量較佳為20原子%以下,更佳為15原子%以下。 By making the content of Ti 1 atomic% or more, the moisture resistance can be improved. In addition, by making the content of Ti 30 atomic% or less, etching properties can be improved. In addition, for the same reason as described above, the content of Ti is preferably 20 atomic% or less, and more preferably 15 atomic% or less.

另外,Ti與Mo相比,亦為容易向Cu或Al熱擴散的元素。 因此,本發明的靶材中,使Ni為10原子%~49原子%、Ti為1原子%~30原子%,且使Ni與Ti的合計為50原子%以下。 In addition, Ti is also an element that is easier to thermally diffuse to Cu or Al than Mo. Therefore, in the target material of the present invention, Ni is 10 atomic% to 49 atomic %, Ti is 1 atomic% to 30 atomic %, and the total of Ni and Ti is 50 atomic% or less.

本發明的靶材可藉由以下的製造方法獲得,對其一般形態進行說明。再者,本發明不受以下說明的形態限定。 The target of the present invention can be obtained by the following manufacturing method, and its general form will be described. In addition, this invention is not limited to the form demonstrated below.

首先,以含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,剩餘部分包含Mo及不可避免的雜質的方式,混合Mo粉末、NiMo合金粉末與Ti粉末而獲得混合粉末。而且,將所述混合粉末在常溫(JIS Z 8703中規定的20±15℃)下例如使用冷等靜壓(Cold Isostaitc Pressing)(以下,稱為「CIP」)進行加壓而製成成形體。 First, it is mixed in such a way that it contains 10 atomic% to 49 atomic% of Ni, 1 atomic% to 30 atomic% of Ti, and the total amount of Ni and Ti is 50 atomic% or less, and the remainder contains Mo and unavoidable impurities Mo powder, NiMo alloy powder and Ti powder are mixed powders. Furthermore, the mixed powder is pressurized at room temperature (20±15°C specified in JIS Z 8703), for example, using Cold Isostaitc Pressing (hereinafter referred to as "CIP") to form a molded body .

接著,將該成形體加壓燒結而獲得燒結體,對其實施機械加工,藉此可獲得本發明的靶材。此處,本發明的實施形態的靶材的製造方法藉由應用後述的加壓燒結的條件,在獲得所述燒結體的步驟之後,不實施用於去除靶材的殘留應力或調整維氏硬度的熱處理,而可獲得調整了維氏硬度的靶材。 Next, the compact is sintered under pressure to obtain a sintered body, which is subjected to mechanical processing to obtain the target of the present invention. Here, the manufacturing method of the target material of the embodiment of the present invention applies the pressure sintering conditions described later, and does not perform the step of removing the residual stress of the target material or adjusting the Vickers hardness after the step of obtaining the sintered body. The target material with adjusted Vickers hardness can be obtained.

再者,就有效地減少靶材整體的維氏硬度的偏差的觀點而言,本發明的實施形態的靶材較佳為在所述製造方法中,在獲得所述燒結體的步驟之前包括「將所述成形體破碎而獲得破碎粉的步驟」,在獲得所述燒結體的步驟中,對該破碎粉進行加壓燒結而獲得燒結體。例如,較佳為藉由將所述成形體例如利用盤磨機等進行一次性破碎,製作1.5mm以下的破碎粉,將該破碎粉加壓燒結而獲得燒結體,對其實施機械加工而獲得。 Furthermore, from the viewpoint of effectively reducing the deviation of the Vickers hardness of the entire target material, the target material of the embodiment of the present invention preferably includes the step of obtaining the sintered body in the manufacturing method. The step of crushing the compact to obtain crushed powder". In the step of obtaining the sintered body, the crushed powder is pressure-sintered to obtain a sintered body. For example, it is preferable to crush the formed body at one time, for example, using a disc mill, to produce crushed powder of 1.5 mm or less, press and sinter the crushed powder to obtain a sintered body, and perform mechanical processing on it. .

加壓燒結可應用HIP或熱壓,較佳為在800℃~1200℃、10MPa~200MPa、1小時~10小時的條件下進行。該些條件的選擇取決於加壓燒結的裝置。例如,HIP容易適用低溫高壓的條件,熱壓容易應用高溫低壓的條件。在本發明的製造方法中,加壓燒結較佳為使用HIP,所述HIP可在低溫下燒結,可抑制Ni合金或Ti的擴散,且可在高壓下燒結而獲得高密度的燒結體。 Pressure sintering can be performed using HIP or hot pressing, preferably at 800°C to 1200°C, 10MPa to 200MPa, and 1 hour to 10 hours. The selection of these conditions depends on the pressure sintering device. For example, HIP is easy to apply low temperature and high pressure conditions, and hot pressing is easy to apply high temperature and low pressure conditions. In the manufacturing method of the present invention, pressure sintering preferably uses HIP, which can be sintered at a low temperature, can suppress the diffusion of Ni alloy or Ti, and can be sintered under high pressure to obtain a high-density sintered body.

藉由使燒結溫度為800℃以上,可促進燒結,獲得高密度的燒結體。另外,基於與所述同樣的理由,燒結溫度較佳為900℃以上。 By setting the sintering temperature to 800°C or higher, sintering can be promoted and a high-density sintered body can be obtained. In addition, for the same reason as described above, the sintering temperature is preferably 900°C or higher.

另一方面,藉由使燒結溫度為1200℃以下,可抑制液相的顯現或燒結體的晶體成長,可獲得均勻且微細的金屬組織。另外,基於與所述同樣的理由,燒結溫度較佳為1100℃以下。 On the other hand, by setting the sintering temperature to 1200°C or lower, the appearance of the liquid phase or the crystal growth of the sintered body can be suppressed, and a uniform and fine metal structure can be obtained. In addition, for the same reason as described above, the sintering temperature is preferably 1100°C or lower.

藉由使加壓力為10MPa以上,可促進燒結,獲得高密度的燒結體。另外,藉由使加壓力為200MPa以下,可抑制燒結時殘留應力向靶材的導入,可抑制燒結後的裂紋的發生,除此之外,可利用通用的加壓燒結裝置。 By setting the pressure to 10 MPa or more, sintering can be promoted and a high-density sintered body can be obtained. In addition, by setting the pressure to 200 MPa or less, the introduction of residual stress to the target during sintering can be suppressed, and the occurrence of cracks after sintering can be suppressed. In addition, a general-purpose pressure sintering device can be used.

藉由使燒結時間為1小時以上,可充分進行燒結,可獲得高密度的燒結體。另外,藉由使燒結時間為10小時以下,可抑制製造效率的降低。 By setting the sintering time to 1 hour or more, sintering can be sufficiently performed, and a high-density sintered body can be obtained. In addition, by setting the sintering time to 10 hours or less, it is possible to suppress a decrease in manufacturing efficiency.

[實施例] [Example]

以含有30原子%的Ni、20原子%的Ti且剩餘部分包含Mo及不可避免的雜質的方式,混合體積基準的累積粒度分佈的 50%粒徑(以下稱為「D50」)為7μm的Mo粉末、D50為35μm的NiMo合金粉末與D50為30μm的Ti粉末而獲得混合粉末。 The cumulative particle size distribution based on volume is mixed in a way that contains 30 atomic% of Ni, 20 atomic% of Ti, and the remainder contains Mo and unavoidable impurities The 50% particle size (hereinafter referred to as "D50") is Mo powder of 7 μm, NiMo alloy powder of D50 of 35 μm, and Ti powder of D50 of 30 μm to obtain mixed powders.

而且,將該混合粉末填充到橡膠製的模具內,在成形壓力2.7ton/cm2(≒2.65MPa)的條件下進行CIP處理,獲得成形體。 Then, the mixed powder was filled in a rubber mold, and CIP treatment was performed under a molding pressure of 2.7 ton/cm 2 (≒2.65 MPa) to obtain a molded body.

接著,將所述獲得的成形體設置在HIP裝置的爐體內部,在1000℃、120MPa、5小時的條件下實施加壓燒結,獲得作為本發明例1的靶材的Mo合金燒結體。 Next, the obtained molded body was set in the furnace of the HIP device, and pressure sintering was performed under the conditions of 1000° C., 120 MPa, and 5 hours to obtain a Mo alloy sintered body as a target of Example 1 of the present invention.

以含有20原子%的Ni、20原子%的Ti且剩餘部分包含Mo及不可避免的雜質的方式,混合體積基準的累積粒度分佈的50%粒徑(以下稱為「D50」)為7μm的Mo粉末、D50為35μm的NiMo合金粉末與D50為30μm的Ti粉末而獲得混合粉末。 The 50% particle size (hereinafter referred to as "D50") of the cumulative particle size distribution based on the volume of mixing is 7μm Mo in a way that it contains 20 at% Ni, 20 at% Ti and the remainder contains Mo and unavoidable impurities. Powder, NiMo alloy powder with D50 of 35 μm and Ti powder with D50 of 30 μm to obtain mixed powder.

而且,將該混合粉末填充到橡膠製的模具內,在成形壓力2.7ton/cm2(≒2.65MPa)的條件下進行CIP處理,獲得成形體。將所述成形體利用盤磨機破碎,獲得1.5mm以下的破碎粉。 Then, the mixed powder was filled in a rubber mold, and CIP treatment was performed under a molding pressure of 2.7 ton/cm 2 (≒2.65 MPa) to obtain a molded body. The formed body was crushed by a disc mill to obtain crushed powder of 1.5 mm or less.

接著,將所述獲得的破碎粉設置在HIP裝置的爐體內部,在1000℃、120MPa、5小時的條件下實施加壓燒結,獲得作為本發明例2的靶材的Mo合金燒結體。 Next, the obtained crushed powder was set in the furnace body of the HIP device, and pressure sintering was performed under the conditions of 1000° C., 120 MPa, and 5 hours to obtain a Mo alloy sintered body as a target of Example 2 of the present invention.

以含有49原子%的Ni、1原子%的Ti且剩餘部分包含Mo及不可避免的雜質的方式,混合體積基準的累積粒度分佈的50%粒徑(以下稱為「D50」)為7μm的Mo粉末、D50為35μm的NiMo合金粉末與D50為30μm的Ti粉末而獲得混合粉末。 The 50% particle size (hereinafter referred to as "D50") of the cumulative particle size distribution based on the volume of mixing is 7μm Mo with 49 atomic% Ni, 1 atomic% Ti and the remainder contains Mo and unavoidable impurities Powder, NiMo alloy powder with D50 of 35 μm and Ti powder with D50 of 30 μm to obtain mixed powder.

而且,將該混合粉末填充到橡膠製的模具內,在成形壓力2.7 ton/cm2(≒2.65MPa)的條件下進行CIP處理,獲得成形體。將所述成形體利用盤磨機破碎,獲得1.5mm以下的破碎粉。 Then, the mixed powder was filled in a rubber mold, and CIP treatment was performed under a molding pressure of 2.7 ton/cm 2 (≒2.65 MPa) to obtain a molded body. The formed body was crushed by a disc mill to obtain crushed powder of 1.5 mm or less.

接著,將所述獲得的破碎粉設置在HIP裝置的爐體內部,在1000℃、120MPa、5小時的條件下實施加壓燒結,獲得作為本發明例3的靶材的Mo合金燒結體。 Next, the obtained crushed powder was set in the furnace of the HIP device, and pressure sintering was performed under the conditions of 1000° C., 120 MPa, and 5 hours to obtain a Mo alloy sintered body as a target of Example 3 of the present invention.

以含有10原子%的Ni、30原子%的Ti且剩餘部分包含Mo及不可避免的雜質的方式,混合體積基準的累積粒度分佈的50%粒徑(以下稱為「D50」)為7μm的Mo粉末、D50為35μm的NiMo合金粉末與D50為30μm的Ti粉末而獲得混合粉末。 The 50% particle size (hereinafter referred to as "D50") of the cumulative particle size distribution based on the mixing volume is 7μm Mo in a manner that contains 10 atomic% Ni, 30 atomic% Ti, and the remainder contains Mo and unavoidable impurities Powder, NiMo alloy powder with D50 of 35 μm and Ti powder with D50 of 30 μm to obtain mixed powder.

而且,將該混合粉末填充到橡膠製的模具內,在成形壓力2.7ton/cm2(≒2.65MPa)的條件下進行CIP處理,獲得成形體。 Then, the mixed powder was filled in a rubber mold, and CIP treatment was performed under a molding pressure of 2.7 ton/cm 2 (≒2.65 MPa) to obtain a molded body.

接著,將所述獲得的成形體設置在HIP裝置的爐體內部,在1000℃、120MPa、5小時的條件下實施加壓燒結,獲得作為本發明例4的靶材的Mo合金燒結體。 Next, the obtained molded body was set in the furnace of the HIP device, and pressure sintering was performed under the conditions of 1000° C., 120 MPa, and 5 hours to obtain a Mo alloy sintered body as a target of Example 4 of the present invention.

以含有30原子%的Ni、20原子%的Ti且剩餘部分包含Mo及不可避免的雜質的方式,混合D50為7μm的Mo粉末、D50為35μm的NiMo合金粉末與D50為30μm的Ti粉末而獲得混合粉末。 It is obtained by mixing Mo powder with a D50 of 7μm, NiMo alloy powder with a D50 of 35μm and Ti powder with a D50 of 30μm in a manner that contains 30 at% Ni, 20 at% Ti, and the remainder contains Mo and unavoidable impurities. Mix the powder.

而且,將該混合粉末填充到軟鋼製的加壓容器中,將其設置在HIP裝置的爐體內部,在1000℃、120MPa、5小時的條件下實施加壓燒結,獲得作為比較例的靶材的Mo合金燒結體。 Then, the mixed powder was filled in a pressure vessel made of mild steel, set in the furnace body of the HIP device, and pressure sintered under the conditions of 1000° C., 120 MPa, and 5 hours to obtain a target as a comparative example Mo alloy sintered body.

從所述獲得的各燒結體的成為濺鍍面的面的任意位置 藉由機械加工採取試驗片。而且,維氏硬度以JIS Z 2244為基準,使用明石製作所股份有限公司製造的MVK-E,在相當於圖1及圖2所示的9點的測定點進行測定。其結果如表1所示。 Arbitrary positions of the sputtering surface of each sintered body obtained from the above Take a test piece by machining. In addition, the Vickers hardness was measured at a measurement point corresponding to the 9 points shown in FIGS. 1 and 2 using MVK-E manufactured by Akashi Manufacturing Co., Ltd. based on JIS Z 2244. The results are shown in Table 1.

此處,確認了作為本發明例的Mo合金燒結體在用於形成靶材的形狀的機械加工時,均無刀片的磨損或破損。另外,在所述機械加工中,亦無Mo合金燒結體的脫落,因此亦可期待抑制濺鍍時的異常放電。另外,在對切削機械的卡緊等處理中Mo合金燒結體亦未變形或破損。 Here, it was confirmed that the Mo alloy sintered body as an example of the present invention has no wear or breakage of the blade when it is used for machining to form the shape of a target material. In addition, the Mo alloy sintered body does not fall off during the machining process, so it can be expected to suppress abnormal discharge during sputtering. In addition, the Mo alloy sintered body was not deformed or damaged during processing such as clamping of the cutting machine.

另一方面,作為比較例的Mo合金燒結體在用於形成靶材的形狀的機械加工時,發生了刀片的磨損或破損。另外,在所述機械加工中,確認了Mo合金燒結體的脫落。 On the other hand, when the Mo alloy sintered body as a comparative example was used for machining to form the shape of the target, the blade was worn or broken. In addition, in the machining process, it was confirmed that the Mo alloy sintered body fell off.

Figure 109108863-A0305-02-0012-1
Figure 109108863-A0305-02-0012-1

利用光學顯微鏡觀察各靶材的成為濺鍍面的面的金屬組織的結果如圖1及圖2所示。 The results of observing the metal structure of the sputtering surface of each target with an optical microscope are shown in FIGS. 1 and 2.

作為比較例的靶材是在成為圖2所示的基體的Mo相中分散 存在以淺灰色部分表示的粗大的Ni合金相的金屬組織,確認了維氏硬度的偏差(標準偏差)超過20HV。 The target as a comparative example is dispersed in the Mo phase that becomes the matrix shown in Figure 2 There is a metal structure of a coarse Ni alloy phase represented by a light gray part, and it was confirmed that the deviation (standard deviation) of the Vickers hardness exceeds 20 HV.

另一方面,作為本發明例1的靶材中,可確認圖1的淺灰色部分表示的Ni合金相微細地分散,不存在比較例中觀察到的粗大的Ni合金相,維氏硬度的偏差(標準偏差)被調整為20HV以下。藉此,本發明的靶材除了可抑制處理中的靶材的變形或切削工具的刀片的磨損或破損之外,亦可期待抑制濺鍍時的異常放電的起點的生成。 On the other hand, in the target material of Example 1 of the present invention, it can be confirmed that the Ni alloy phase shown in the light gray part of FIG. 1 is finely dispersed, and there is no coarse Ni alloy phase observed in the comparative example, and the deviation of Vickers hardness (Standard deviation) is adjusted to 20HV or less. Thereby, the target of the present invention can be expected to suppress the deformation of the target during processing or the wear or breakage of the blade of the cutting tool, and it can also be expected to suppress the generation of the starting point of abnormal discharge during sputtering.

Claims (2)

一種鉬合金靶材,含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,剩餘部分包含Mo及不可避免的雜質,維氏硬度為340 HV~450 HV,在9點測定點進行了測定的維氏硬度的標準偏差為20 HV以下。A molybdenum alloy target material containing Ni at 10 at% to 49 at %, Ti at 1 at% to 30 at %, and the total amount of Ni and Ti is 50 at% or less, and the remainder contains Mo and unavoidable impurities, The Vickers hardness is 340 HV to 450 HV, and the standard deviation of the Vickers hardness measured at 9 measuring points is 20 HV or less. 一種鉬合金靶材的製造方法,包括: 以含有10原子%~49原子%的Ni、1原子%~30原子%的Ti,且Ni與Ti的合計量為50原子%以下,剩餘部分包含Mo及不可避免的雜質的方式,混合Mo粉末、NiMo合金粉末與Ti粉末而獲得混合粉末的步驟; 在常溫下對所述混合粉末進行加壓而獲得成形體的步驟;以及 對所述成形體進行加壓燒結而獲得燒結體的步驟。A method for manufacturing a molybdenum alloy target material, including: The Mo powder is mixed so that it contains 10 atomic% to 49 atomic% of Ni, 1 atomic% to 30 atomic% of Ti, and the total amount of Ni and Ti is 50 atomic% or less, and the remainder contains Mo and inevitable impurities , NiMo alloy powder and Ti powder to obtain mixed powder steps; The step of pressing the mixed powder at room temperature to obtain a molded body; and The step of pressure-sintering the compact to obtain a sintered body.
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CN114934260B (en) * 2022-05-23 2024-02-13 安泰天龙钨钼科技有限公司 Molybdenum alloy target material and preparation method and application thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201441399A (en) * 2013-02-15 2014-11-01 Hitachi Metals Ltd Manufacturing method of molybdenum alloy sputtering target materials and molybdenum alloy sputtering target materials
TW201612338A (en) * 2014-08-20 2016-04-01 Plansee Se Metallization for a thin-film component, process for the production thereof and sputtering target

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4110533B2 (en) * 2004-02-27 2008-07-02 日立金属株式会社 Manufacturing method of Mo-based target material
JP2008255440A (en) 2007-04-06 2008-10-23 Hitachi Metals Ltd MoTi ALLOY SPUTTERING TARGET MATERIAL
JP2010070409A (en) * 2008-09-17 2010-04-02 Idemitsu Kosan Co Ltd Method for producing oxide sintered compact
JP5370917B2 (en) * 2009-04-20 2013-12-18 日立金属株式会社 Method for producing Fe-Co-Ni alloy sputtering target material
JP5550328B2 (en) 2009-12-22 2014-07-16 株式会社東芝 Mo sputtering target and manufacturing method thereof
JP5988140B2 (en) 2011-06-07 2016-09-07 日立金属株式会社 Manufacturing method of MoTi target material and MoTi target material
JP6602550B2 (en) 2014-04-28 2019-11-06 株式会社アライドマテリアル Material for sputtering target
JP6997945B2 (en) * 2016-12-27 2022-01-18 日立金属株式会社 Laminated wiring film and its manufacturing method and Mo alloy sputtering target material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201441399A (en) * 2013-02-15 2014-11-01 Hitachi Metals Ltd Manufacturing method of molybdenum alloy sputtering target materials and molybdenum alloy sputtering target materials
TW201612338A (en) * 2014-08-20 2016-04-01 Plansee Se Metallization for a thin-film component, process for the production thereof and sputtering target

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