TWI790138B - Control method of a substrate holder of deposition equipment - Google Patents
Control method of a substrate holder of deposition equipment Download PDFInfo
- Publication number
- TWI790138B TWI790138B TW111108443A TW111108443A TWI790138B TW I790138 B TWI790138 B TW I790138B TW 111108443 A TW111108443 A TW 111108443A TW 111108443 A TW111108443 A TW 111108443A TW I790138 B TWI790138 B TW I790138B
- Authority
- TW
- Taiwan
- Prior art keywords
- stopper
- wafer
- carrier plate
- cover ring
- ring
- Prior art date
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明提供一種沉積機台的承載盤控制方法,可減小晶圓與各個機構之間的碰撞力度,以減少在碰撞的過程中產生微粒並防止晶圓損壞。The invention provides a method for controlling a carrier plate of a deposition machine, which can reduce the collision force between a wafer and various mechanisms, so as to reduce particles generated during the collision and prevent damage to the wafer.
化學氣相沉積(CVD)、物理氣相沉積(PVD)及原子層沉積(ALD)皆是常用的薄膜沉積設備,並普遍被使用在積體電路、發光二極體及顯示器等製程中。Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment, and are widely used in the manufacturing processes of integrated circuits, light-emitting diodes and displays.
沉積的設備主要包括一腔體及一晶圓承載盤。晶圓承載盤位於腔體內,並用以承載至少一晶圓。以物理氣相沉積為例,腔體內需要設置一靶材,靶材面對晶圓承載盤上的晶圓。在進行物理氣相沉積時,可將惰性氣體及/或反應氣體輸送至腔體內,分別對靶材及晶圓承載盤施加偏壓,並透過晶圓承載盤加熱承載的晶圓。腔體內的惰性氣體因為高壓電場的作用,形成離子化的惰性氣體,離子化的惰性氣體會受到靶材上的偏壓吸引而轟擊靶材。從靶材濺出的靶材原子或分子受到晶圓承載盤上的偏壓吸引,並沉積在加熱的晶圓的表面,以在晶圓的表面形成薄膜。The deposition equipment mainly includes a cavity and a wafer carrier. The wafer carrying tray is located in the chamber and is used to carry at least one wafer. Taking physical vapor deposition as an example, a target needs to be set in the cavity, and the target faces the wafer on the wafer carrier. During physical vapor deposition, the inert gas and/or reaction gas can be delivered into the chamber to apply bias voltage to the target material and the wafer carrier plate respectively, and heat the wafer carried by the wafer carrier plate. The inert gas in the cavity forms ionized inert gas due to the action of high-voltage electric field, and the ionized inert gas will be attracted by the bias voltage on the target and bombard the target. Target atoms or molecules sputtered from the target are attracted by the bias voltage on the wafer carrier plate and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.
原子層沉積製程是一種將物質以單原子的形式一層一層地鍍於基板表面的技術,原子層沉積的主要反應物有兩種化學物質,通常被稱作前驅物,並將兩種前驅物依序傳送至反應空間內。The atomic layer deposition process is a technology that coats substances layer by layer on the surface of a substrate in the form of single atoms. The main reactants of atomic layer deposition are two chemical substances, usually called precursors, and the two precursors are used according to Sequentially sent to the reaction space.
然而不論是那一種薄膜沉積設備,若在腔體的內部存在微粒(particle),都會對晶圓造成汙染,進而影響晶圓的製程良率。However, regardless of the type of thin film deposition equipment, if there are particles inside the cavity, the wafer will be polluted, thereby affecting the process yield of the wafer.
為了解決上述先前技術面臨的問題,本發明提出一種沉積機台的承載盤控制方法,可有效減低承載盤位移過程中產生的汙染,並可避免晶圓在接觸其他裝置的過程中發生磨損,以提高製程的良率。In order to solve the above-mentioned problems faced by the prior art, the present invention proposes a method for controlling the susceptor of the deposition machine, which can effectively reduce the pollution generated during the displacement of the susceptor, and avoid the abrasion of the wafer during contact with other devices. Improve process yield.
本發明的一目的,在於提供一種沉積機台的承載盤控制方法,沉積機台包括一腔體、一承載盤、一擋件及一覆蓋環。承載盤、擋件及覆蓋環位於腔體的容置空間內,其中擋件用以承載覆蓋環,而承載盤則用以承載至少一晶圓並可相對於擋件及覆蓋環位移。An object of the present invention is to provide a method for controlling a carrier plate of a deposition machine. The deposition machine includes a cavity, a carrier plate, a stopper and a covering ring. The carrying plate, the stopper and the cover ring are located in the accommodation space of the cavity, wherein the stopper is used for carrying the cover ring, and the carrying plate is used for carrying at least one wafer and can be displaced relative to the stopper and the cover ring.
當承載盤位於擋件的下方,且承載盤與擋件之間的距離小於一門檻值時,開始降低承載盤位移的速度。當承載盤及/或晶圓接觸覆蓋環時,承載盤的位移速度降至最低,以減少承載盤及/或晶圓接觸時的碰撞力度,及減少碰撞過程中產生微粒汙染,並可避免覆蓋環在接觸晶圓的過程造成晶圓的損壞。When the carrying tray is located below the stopper and the distance between the carrying tray and the stopper is less than a threshold value, the displacement speed of the carrying tray starts to be reduced. When the susceptor and/or wafer contact the cover ring, the displacement speed of the susceptor is minimized to reduce the collision force when the susceptor and/or wafer contact, and reduce particle contamination during the collision process, and avoid coverage The ring causes damage to the wafer during contact with the wafer.
此外承載盤接觸覆蓋環後,會承載覆蓋環離開擋件,並位移至擋件的上方。當承載盤與擋件之間的距離大於門檻值後,可增加承載盤離開擋件的速度。In addition, after the bearing disc touches the cover ring, the bearing cover ring will leave the stopper and move to the top of the stopper. When the distance between the carrying tray and the stopper is greater than the threshold value, the speed at which the carrying tray leaves the stopper can be increased.
本發明的一目的,在於提供一種沉積機台的承載盤控制方法,其中承載盤承載晶圓及覆蓋環由上方朝擋件靠近時,覆蓋環會接觸擋件,並將覆蓋環接觸擋件的位置定義為接觸位置。An object of the present invention is to provide a method for controlling the susceptor of a deposition machine, wherein when the susceptor carries the wafer and the cover ring approaches the stopper from above, the cover ring will contact the stopper, and the cover ring will contact the stopper The location is defined as the contact location.
當承載盤、覆蓋環及晶圓位於擋件的上方,且承載盤與擋件之間的距離小於一門檻值時,開始降低承載盤位移的速度。當覆蓋環接觸擋件時,承載盤的位移速度降至最低,以減少覆蓋環與擋件接觸時的碰撞力度,並防止在碰撞過程中產生的微粒汙染。When the carrier tray, the covering ring and the wafer are located above the stopper, and the distance between the carrier tray and the stopper is less than a threshold value, the displacement speed of the carrier tray starts to be reduced. When the cover ring touches the stopper, the displacement speed of the carrier plate is reduced to the minimum, so as to reduce the collision force when the cover ring contacts the stopper, and prevent particle pollution generated during the collision.
覆蓋環接觸擋件後,承載盤會朝擋件的下方位移,並將覆蓋環放置在擋件上。當承載盤與接觸位置之間的距離大於門檻值後,開始增加承載盤離開擋件的速度。After the cover ring touches the stopper, the carrying plate will be displaced toward the bottom of the stopper, and the cover ring will be placed on the stopper. When the distance between the carrier disc and the contact position is greater than the threshold value, start to increase the speed at which the carrier disc leaves the stopper.
為了達到上述的目的,本發明提出一種沉積機台的承載盤控制方法,適用於一沉積機台,沉積機台包括一腔體、一承載盤、一擋件及一覆蓋環,承載盤、擋件及覆蓋環位於腔體的一容置空間內,並以擋件承載覆蓋環,承載盤的控制方法包括:承載盤承載一晶圓,並由下方靠近擋件及覆蓋環,承載盤開始接觸覆蓋環的位置被定義為一接觸位置;於接觸位置的下方定義一第一位置,並於接觸位置的上方定義一第二位置;承載盤接觸第一位置後,降低承載盤朝擋件及覆蓋環位移的速度;承載盤於接觸位置接觸放置在擋件上的覆蓋環;承載盤帶動覆蓋環離開擋件;及承載盤接觸第二位置後,增加承載盤離開擋件的速度。In order to achieve the above-mentioned purpose, the present invention proposes a method for controlling the carrier plate of a deposition machine, which is suitable for a deposition machine. The deposition machine includes a cavity, a carrier plate, a stopper and a covering ring. The part and the cover ring are located in a housing space of the cavity, and the cover ring is carried by the stopper. The control method of the carrier plate includes: carrying a wafer on the carrier plate, and approaching the stopper and the cover ring from below, and the carrier plate starts to contact The position of the cover ring is defined as a contact position; a first position is defined below the contact position, and a second position is defined above the contact position; after the carrier tray touches the first position, lower the carrier tray towards the stopper and cover The speed of the ring displacement; the bearing disc contacts the cover ring placed on the stopper at the contact position; the bearing disc drives the cover ring away from the stopper; and after the bearing disc touches the second position, the speed at which the bearing disc leaves the stopper is increased.
本發明提出另一種沉積機台的承載盤控制方法,適用於一沉積機台,沉積機台包括一腔體、一承載盤、一擋件及一覆蓋環,承載盤、擋件及覆蓋環位於腔體的一容置空間內,並以擋件承載覆蓋環,承載盤的控制方法包括:承載盤承載一晶圓及覆蓋環,並由上方靠近擋件,其中覆蓋環開始接觸擋件的位置被定義為一接觸位置;於接觸位置的下方定義一第一位置,並於接觸位置的上方定義一第二位置;承載盤接觸第二位置後,降低承載盤朝擋件位移的速度;覆蓋環於接觸位置接觸擋件;承載盤將覆蓋環放置在擋件上,並朝第一位置的方向位移;及承載盤接觸第一位置後,增加承載盤離開擋件的速度。The present invention proposes another method for controlling the carrier plate of a deposition machine, which is suitable for a deposition machine. The deposition machine includes a cavity, a carrier plate, a stopper, and a covering ring. The carrier plate, the stopper, and the cover ring are located at In an accommodating space of the cavity, the cover ring is carried by the stopper. The control method of the carrier plate includes: the carrier plate carries a wafer and the cover ring, and approaches the stopper from above, wherein the cover ring starts to contact the stopper. It is defined as a contact position; a first position is defined below the contact position, and a second position is defined above the contact position; after the carrier plate touches the second position, the speed of the carrier plate’s displacement towards the stopper is reduced; the cover ring Contacting the stopper at the contact position; the bearing plate places the cover ring on the stopper and displaces toward the first position; and after the bearing plate touches the first position, increases the speed of the bearing plate leaving the stopper.
所述的沉積機台的承載盤控制方法,其中第一位置與接觸位置之間的距離小於1公分。In the method for controlling the carrier plate of the deposition machine, the distance between the first position and the contact position is less than 1 cm.
所述的沉積機台的承載盤控制方法,其中第二位置與接觸位置之間的距離小於1公分。In the method for controlling the carrier plate of the deposition machine, the distance between the second position and the contact position is less than 1 cm.
所述的沉積機台的承載盤控制方法,包括:承載盤位於擋件及覆蓋環的下方,並位於一晶圓進出位置;及承載盤帶動晶圓由晶圓進出位置朝擋件及覆蓋環的方向位移,承載盤在晶圓進出位置與第一位置之間的速度,大於承載盤在第一位置與接觸位置之間的速度。The method for controlling the carrier plate of the deposition machine includes: the carrier plate is located under the stopper and the cover ring, and is located at a wafer in and out position; and the carrier plate drives the wafer from the wafer in and out position toward the stopper and the cover ring The displacement in the direction of , the speed of the susceptor between the wafer in-out position and the first position is greater than the speed of the susceptor between the first position and the contact position.
所述的沉積機台的承載盤控制方法,包括一靶材位於腔體的頂部,包括:承載盤帶動晶圓及覆蓋環離開擋件,並朝靶材的方向位移。The method for controlling the carrier plate of the deposition machine includes a target located on the top of the cavity, including: the carrier plate drives the wafer and the cover ring away from the stopper, and moves towards the direction of the target.
所述的沉積機台的承載盤控制方法,包括:承載盤承載晶圓及覆蓋環,並由上方靠近擋件;承載盤接觸第二位置後,降低承載盤朝擋件位移的速度;覆蓋環於接觸位置接觸擋件;覆蓋環放置在擋件上,而承載盤則帶動晶圓離開擋件及覆蓋環;及承載盤離開擋件並接觸第一位置後,增加承載盤離開擋件的速度。The method for controlling the carrier plate of the deposition machine includes: the carrier plate carries the wafer and the cover ring, and approaches the stopper from above; after the carrier plate touches the second position, reduces the displacement speed of the carrier plate toward the stopper; the cover ring Contact the stopper at the contact position; the cover ring is placed on the stopper, and the susceptor drives the wafer away from the stopper and the cover ring; and after the susceptor leaves the stopper and contacts the first position, the speed at which the susceptor leaves the stopper is increased .
所述的沉積機台的承載盤控制方法,包括一靶材位於腔體的頂部,包括:承載盤帶動晶圓及覆蓋環由靶材朝擋件的方向位移。The method for controlling the carrier of the deposition machine includes a target located on the top of the chamber, including: the carrier drives the wafer and the covering ring to move from the target to the stopper.
請參閱圖1及圖2,分別為本發明沉積機台一實施例的構造示意圖及沉積機台的承載盤控制方法一實施例的步驟流程圖。如圖所示,沉積機台10主要包括一腔體11、一承載盤13、一擋件15及一覆蓋環17。腔體11包括一容置空間110,用以容置承載盤13、擋件15及覆蓋環17。Please refer to FIG. 1 and FIG. 2 , which are respectively a structural schematic view of an embodiment of a deposition machine and a flow chart of steps of an embodiment of a method for controlling a carrier plate of a deposition machine according to the present invention. As shown in the figure, the
擋件15的一端連接腔體11,而另一端則在容置空間110內形成一開口152。具體而言,擋件15可包括一環形凸起部151、一環形底部153、一環形遮擋部155及一環形連接部157。環形凸起部151經由環形底部153連接環形遮擋部155,而環形遮擋部155經由環形連接部157連接腔體11。One end of the blocking
環形凸起部151及環形遮擋部155可為空心柱狀體。環形凸起部151的周長及高度皆小於環形遮擋部155,例如環形凸起部151及環形遮擋部155同軸,並設置在環形遮擋部155的內側。環形底部153為環狀,環形凸起部151的底端經由環形底部153連接環形遮擋部155的底端,並於環形凸起部151的內側形成開口152。The
環形連接部157為環狀,環形連接部157的徑向內側連接環形遮擋部155的頂端,而環形連接部157的徑向外側則連接腔體11,以將擋件15固定在腔體11上。覆蓋環17為環狀構造。覆蓋環17的直徑大於開口152,並用以放置在擋件15的環形凸起部151上。The annular connecting
承載盤13位於擋件15形成的開口152的垂直投影上,承載盤13的承載面131用以承載一晶圓12,並帶動晶圓12相對於擋件15位移。在本發明一實施例中,承載盤13可連接一升降單元14,並透過升降單元14帶動承載盤13相對於擋件15位移,例如升降單元14可以是線性致動器。The
腔體11上可設置一晶圓進出閘門112,晶圓進出閘門112的延伸位置可被定義為一晶圓進出位置167。在實際應用時可透過一機械手臂經由晶圓進出閘門112將晶圓12輸送至位於晶圓進出位置167的承載盤13上,或者是透過機械手臂將位於晶圓進出位置167的承載盤13上的晶圓12取出腔體11。A wafer entry and
在實際應用時,升降單元14可驅動位於擋件15及覆蓋環17下方的承載盤13,由下方靠近擋件15及覆蓋環17,例如承載盤13可位於晶圓進出位置167,並帶動晶圓12由晶圓進出位置167朝擋件15及覆蓋環17的方向位移。承載盤13在晶圓進出位置167與第一位置163之間的位移速度,大於承載盤13在第一位置163與接觸位置161之間的位移速度。升降單元14可帶動承載盤13穿過擋件15形成的開口152,並位移至擋件15的上方。In actual application, the
承載盤13在穿過擋件15上的開口152的過程中,承載盤13及承載的晶圓12會接觸擋件15上的覆蓋環17,並可將承載盤13及/或晶圓12最初開始接觸覆蓋環17的位置定義為一接觸位置161,如步驟21所示。具體而言,接觸位置161亦可以是覆蓋環17放置在擋件15上的位置。When the carrier tray 13 passes through the
如圖1所示,本發明於接觸位置161的下方定義一第一位置163,並於接觸位置161的上方定義一第二位置165,如步驟23所示。As shown in FIG. 1 , the present invention defines a
如圖3所示,承載盤13由下方朝擋件15及覆蓋環17靠近並接觸第一位置163後,升降單元14會開始降低承載盤13朝擋件15及覆蓋環17位移的速度,如步驟25所示。As shown in FIG. 3 , after the
第一位置163與接觸位置161之間的距離可小於1公分,而第二位置165與接觸位置161之間的距離亦可小於1公分。具體而言,第一位置163及第二位置165與接觸位置161的距離較大,較有利於升降單元14控制承載盤13的速度,並減少承載盤13及晶圓12與覆蓋環17之間的磨擦或碰撞。然而當第一位置163及第二位置165與接觸位置161的距離較大時,亦會增加承載盤13位移至預設位置所花費的時間,進而降低製程的效率。The distance between the
發明人經過多次的實驗後,認為第一位置163與接觸位置161之間的距離可介於5公厘至2公厘之間,而第二位置165與接觸位置161之間的距離亦可介於5公厘至2公厘之間。如此將可以在不對製程效率造成太大影響的前提下,達到減少承載盤13及晶圓12與覆蓋環17之間的磨擦或碰撞力度的目的。After many experiments, the inventor thinks that the distance between the
如圖4所示,承載盤13及晶圓12會在接觸位置161接觸擋件15上的覆蓋環17,而後升降單元14會繼續帶動承載盤13及晶圓12向上位移,使得承載盤13帶動覆蓋環17離開擋件15,如步驟27所示。此時承載盤13會承載覆蓋環17,而位於覆蓋環17內側的壓合部171則會接觸晶圓12的邊緣,以將晶圓12固定在承載盤13上。As shown in Figure 4, the
具體而言,承載盤13及晶圓12位移至第一位置163後便開始減速,並在接觸位置161到達最小速度,以減小承載盤13及晶圓12與覆蓋環17的碰撞力度,並可降低覆蓋環17撞擊晶圓12的力度。Specifically, after the
在實際應用時,承載盤13可包括一環形構件133。環形構件133環繞設置在用以承載晶圓12的承載面131周圍。環形構件133上可設置一第一對位部135,而覆蓋環17上則設置一第二對位部173。例如第一對位部135為設置在環形構件133的徑向外側的斜面,而第二對位部173則為設置在覆蓋環17的徑向內側的斜面。第一對位部135及第二對位部173的傾斜角度相近。In actual application, the
當承載盤13朝覆蓋環17接近時,覆蓋環17的第二對位部173會接觸承載盤13的第一對位部135,以將覆蓋環17引導至承載盤13的固定位置,使得覆蓋環17的壓合部171可固定承載盤13上的晶圓12。透過第一對位部135及第二對位部173對位覆蓋環17及承載盤13時,第一對位部135及第二對位部173會相互磨擦,並可能產生微粒汙染。When the
若承載盤13的位移速度較快時,會增加第一對位部135及第二對位部173之間的磨擦力,並導致磨擦產生的微粒增加,進而汙染腔體11的容置空間110內的晶圓12、承載盤13及/或擋件15等構件。If the displacement speed of the
此外在對位覆蓋環17及承載盤13時,覆蓋環17可能會產生橫向的位移,例如平行承載盤13的承載面131方向的位移。若覆蓋環17在接觸晶圓12時產生橫向位移,便可能會磨擦晶圓12,進而造成晶圓12表面的損傷。In addition, when the
針對上述可能增加微粒,或是損傷晶圓12的問題,本發明的承載盤13在接觸第一位置163後,便會開始降低靠近擋件15及覆蓋環17的速度,承載盤13在到達接觸位置161時速度會降至最低。如此一來可大幅減低覆蓋環17及承載盤13在進行對位的過程中產生微粒汙染,亦可減小覆蓋環17對晶圓12表面的磨擦,以降低對晶圓12表面所造成的損害。In view of the above-mentioned problems that may increase particles or damage the
上述的環形構件133並非承載盤13的必要構件,在實際應用時承載盤13可不設置環形構件133,並直接在承載盤13的承載面131周圍設置第一對位部135。The
如圖5所示,升降單元14可以繼續驅動承載盤13向上位移,使得承載盤13帶動覆蓋環17離開擋件15。由於擋件15可能還未完成與承載盤13之間的對位,因此升降單元14在接觸位置161與第二位置165之間仍會以較慢的速度帶動承載盤13離開擋件15。直到承載盤13接觸擋件15上方的第二位置165時,升降單元14才會開始提高承載盤13離開擋件15的速度,如步驟29所示。As shown in FIG. 5 , the lifting
具體而言,當沉積機台10是一物理氣相沉積機台時,腔體11的頂部可設置一靶材19,靶材19位於擋件15及覆蓋環17的上方。透過升降單元14帶動承載盤13承載的晶圓12及覆蓋環17離開擋件15,並朝靶材19的方向位移,以改變承載盤13承載的晶圓12與靶材19之間的距離,並調整沉積製程的參數。Specifically, when the
請參閱圖6,為本發明沉積機台的承載盤控制方法又一實施例的步驟流程圖。如圖7所示,當承載盤13、晶圓12及覆蓋環17位移至第二位置165與靶材19之間,並完成沉積製程後,升降單元14會驅動承載盤13及其承載的晶圓12及覆蓋環17由上方靠近擋件15,例如承載盤13帶動晶圓12及覆蓋環17由靶材19朝擋件15的方向位移,如步驟31所示。本發明實施例的步驟31可以是接續圖2的步驟29之後的步驟。Please refer to FIG. 6 , which is a flow chart of the steps of another embodiment of the method for controlling the carrier plate of the deposition machine according to the present invention. As shown in FIG. 7, when the
在本發明一實施例中,覆蓋環17開始接觸擋件15的位置被定義為接觸位置161,並可於接觸位置161的下方及上方分別定義第一位置163及第二位置165。In an embodiment of the present invention, the position where the
如圖5所示,承載盤13接觸擋件15上方的第二位置165後,升降單元14會開始降低承載盤13朝擋件15位移的速度,如步驟33所示。As shown in FIG. 5 , after the
如圖4所示。承載盤13會繼續帶動晶圓12及覆蓋環17繼續朝擋件15的方向位移,使得覆蓋環17在接觸位置161接觸擋件15。而後承載盤13會朝第一位置163的方向位移,帶動承載的晶圓12離開擋件15,並將覆蓋環17放置在擋件15上,如步驟35所示。具體而言,承載盤13帶動晶圓12及覆蓋環17位移至接觸位置161時具有最低的位移速度。As shown in Figure 4. The
如圖3所示,承載盤13離開擋件15並持續向下位移,當承載盤13接觸擋件15下方的第一位置163後,升降單元14會開始增加承載盤13離開擋件15的速度,如步驟37所示。As shown in Figure 3, the
如圖1所示,升降單元14會驅動承載盤13由第一位置163移動至晶圓進出位置167,並透過機械手臂將完成沉積的晶圓12由承載盤13上取出。As shown in FIG. 1 , the lifting
以上所述者,僅為本發明之一較佳實施例而已,並非用來限定本發明實施之範圍,即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.
10:沉積機台 11:腔體 110:容置空間 112:晶圓進出閘門 12:晶圓 13:承載盤 131:承載面 133:環形構件 135:第一對位部 14:升降單元 15:擋件 151:環形凸起部 152:開口 153:環形底部 155:環形遮擋部 157:環形連接部 161:接觸位置 163:第一位置 165:第二位置 167:晶圓進出位置 17:覆蓋環 171:壓合部 173:第二對位部 19:靶材10: deposition machine 11: Cavity 110:Accommodating space 112: Wafer entry and exit gate 12:Wafer 13: carrying plate 131: bearing surface 133: ring member 135: The first alignment department 14: Lifting unit 15: block 151: Annular raised part 152: opening 153: ring bottom 155: ring shielding part 157: ring connection part 161: contact position 163: First position 165: second position 167:Wafer in and out position 17: Cover ring 171: Pressing part 173: The second alignment department 19: target
[圖1]為本發明沉積機台一實施例的構造示意圖。[ Fig. 1 ] is a schematic diagram of the structure of an embodiment of the deposition machine of the present invention.
[圖2]為本發明沉積機台的承載盤控制方法一實施例的步驟流程圖。[ FIG. 2 ] is a flow chart of the steps of an embodiment of the method for controlling the carrier plate of the deposition machine according to the present invention.
[圖3]為本發明沉積機台的承載盤接觸第一位置的構造示意圖。[ FIG. 3 ] is a schematic diagram of the structure of the first contact position of the carrier plate of the deposition machine of the present invention.
[圖4]為本發明沉積機台的承載盤接觸覆蓋環的構造示意圖。[ Fig. 4 ] is a schematic diagram of the structure of the carrier plate contacting the cover ring of the deposition machine of the present invention.
[圖5]為本發明沉積機台的承載盤接觸第二位置的構造示意圖。[ FIG. 5 ] is a schematic diagram of the structure of the second position where the carrier plate contacts the deposition machine of the present invention.
[圖6]為本發明沉積機台的承載盤控制方法又一實施例的步驟流程圖。[ FIG. 6 ] is a flow chart of the steps of another embodiment of the method for controlling the carrier plate of the deposition machine according to the present invention.
[圖7]為本發明沉積機台的承載盤位於第二位置上方的構造示意圖。[ FIG. 7 ] is a schematic diagram of the structure of the deposition machine of the present invention, where the carrier plate is located above the second position.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111108443A TWI790138B (en) | 2022-03-08 | 2022-03-08 | Control method of a substrate holder of deposition equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111108443A TWI790138B (en) | 2022-03-08 | 2022-03-08 | Control method of a substrate holder of deposition equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI790138B true TWI790138B (en) | 2023-01-11 |
TW202336893A TW202336893A (en) | 2023-09-16 |
Family
ID=86670307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111108443A TWI790138B (en) | 2022-03-08 | 2022-03-08 | Control method of a substrate holder of deposition equipment |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI790138B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200401589A (en) * | 2001-07-10 | 2004-01-16 | Tokyo Electron Ltd | Plasma processing device |
US20050211383A1 (en) * | 2002-08-21 | 2005-09-29 | Koji Miyata | Magnetron plasma-use magnetic field generation device |
US20110159702A1 (en) * | 2009-12-25 | 2011-06-30 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
US20140170938A1 (en) * | 2012-10-29 | 2014-06-19 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
US10486285B2 (en) * | 2008-06-04 | 2019-11-26 | Ebara Corporation | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
US20200357616A1 (en) * | 2009-04-03 | 2020-11-12 | Applied Materials, Inc. | High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process |
-
2022
- 2022-03-08 TW TW111108443A patent/TWI790138B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200401589A (en) * | 2001-07-10 | 2004-01-16 | Tokyo Electron Ltd | Plasma processing device |
US20050211383A1 (en) * | 2002-08-21 | 2005-09-29 | Koji Miyata | Magnetron plasma-use magnetic field generation device |
US10486285B2 (en) * | 2008-06-04 | 2019-11-26 | Ebara Corporation | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
US20200357616A1 (en) * | 2009-04-03 | 2020-11-12 | Applied Materials, Inc. | High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process |
US20110159702A1 (en) * | 2009-12-25 | 2011-06-30 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
US20140170938A1 (en) * | 2012-10-29 | 2014-06-19 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
Also Published As
Publication number | Publication date |
---|---|
TW202336893A (en) | 2023-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11133210B2 (en) | Dual temperature heater | |
JP5001432B2 (en) | Substrate processing apparatus and substrate processing method | |
TWI407497B (en) | Multi-region processing system and heads | |
US7922440B2 (en) | Apparatus and method for centering a substrate in a process chamber | |
EP1174910A2 (en) | Method and apparatus for dechucking a substrate | |
KR100639071B1 (en) | Thin-film deposition system | |
JP2010126789A (en) | Sputtering film deposition system | |
KR20060050341A (en) | Substrate Dechucking Method and Apparatus | |
KR102699890B1 (en) | Two-piece shutter disc assembly with self-centering feature | |
CN112639164B (en) | Coaxial lifting device with dynamic leveling function | |
TWI790138B (en) | Control method of a substrate holder of deposition equipment | |
JP5194315B2 (en) | Sputtering equipment | |
US20230366090A1 (en) | Method for controlling substrate carrier of deposition apparatus | |
TWM620754U (en) | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device | |
US20210202296A1 (en) | Method for lifting substrate and apparatus for treating substrate | |
CN116770249A (en) | Control method of carrier plate of deposition machine | |
US20200211892A1 (en) | Mounting table, substrate processing apparatus, and control method | |
CN214088650U (en) | Thin film deposition apparatus | |
KR20240162089A (en) | Film deposition device | |
CN213212104U (en) | Plasma processing apparatus | |
TWM610249U (en) | Thin-film deposition apparatus | |
TWI722944B (en) | Thin-film deposition apparatus and thin-film deposition method | |
US20230411131A1 (en) | Film forming apparatus | |
KR20170076161A (en) | Lifting pin assembly for apparatus processing substrate and apparatus for processing substrate having the same | |
CN112442683A (en) | Thin film deposition apparatus and thin film deposition method |