TWI786129B - Triode type ionization vacuum gauge and pressure measurement method - Google Patents
Triode type ionization vacuum gauge and pressure measurement method Download PDFInfo
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
- G01L21/30—Vacuum gauges by making use of ionisation effects
- G01L21/32—Vacuum gauges by making use of ionisation effects using electric discharge tubes with thermionic cathodes
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- G—PHYSICS
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
- G01L21/10—Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured
- G01L21/12—Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
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- G—PHYSICS
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
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Abstract
Description
本發明係關於一種三極管型電離真空計等的技術。 The present invention relates to the technology of a triode type ionization vacuum gauge and the like.
真空處理裝置係具有可進行藉由濺鍍(sputtering)或蒸鍍(evaporation)所為之成膜等的真空腔室(vacuum chamber)。因該真空腔室內的壓力會給製品良率帶來大影響,因此真空腔室內的壓力有必要正確地測量。作為精度佳地測量真空腔室內的壓力中之1Pa至10-6Pa之範圍的壓力的裝置,已知有一種三極管型電離真空計。 The vacuum processing apparatus has a vacuum chamber (vacuum chamber) capable of film formation by sputtering or evaporation. Since the pressure in the vacuum chamber greatly affects product yield, it is necessary to accurately measure the pressure in the vacuum chamber. A triode type ionization vacuum gauge is known as a device for accurately measuring the pressure in the range of 1 Pa to 10 −6 Pa among the pressures in the vacuum chamber.
三極管型電離真空計一般是具備髮夾(hairpin)狀(倒V字狀)之燈絲(filament)、配置於燈絲之周圍的螺旋狀之柵極(grid)、以及與柵極同軸地配置於柵極之周圍的圓筒狀之離子收集器(ion collector)。在柵極係賦予有比燈絲更高的電壓(正電壓),在離子收集器係賦予有比柵極更低的電壓。 The triode ionization vacuum gauge generally has a hairpin (hairpin)-shaped (inverted V-shaped) filament (filament), a spiral grid (grid) arranged around the filament, and a grid coaxially arranged on the grid. A cylindrical ion collector around the pole. A higher voltage (positive voltage) than the filament is applied to the grid system, and a lower voltage than the grid is applied to the ion collector system.
當燈絲通電時,熱電子就會從燈絲(燈絲之頂部附近)放射,該熱電子係朝向柵極加速而藉由柵極所捕捉。熱電 子之一部分係在柵極之近旁,與飛散於三極管型電離真空計之內部的氣體分子撞擊,藉此,氣體分子被離子化。 When the filament is energized, hot electrons are emitted from the filament (near the top of the filament), which are accelerated towards and captured by the grid. A part of the thermal electrons is near the grid and collides with the gas molecules scattered inside the triode ionization vacuum gauge, whereby the gas molecules are ionized.
已被離子化的氣體分子(正離子)係由離子收集器所吸引而撞擊於離子收集器,且從離子收集器接收電子。已被離子化的氣體分子從離子收集器接收電子,藉此在離子收集器產生離子電流。由於該離子電流之值係與飛散於三極管型電離真空計之內部的氣體分子之量成正比,所以藉由測量離子電流之值就可以測量安裝有三極管型電離真空計的測量對象物(例如真空處理裝置)內部的壓力。 The ionized gas molecules (positive ions) are attracted by the ion collector, collide with the ion collector, and receive electrons from the ion collector. The ionized gas molecules receive electrons from the ion collector, thereby generating an ion current in the ion collector. Since the value of the ionic current is proportional to the amount of gas molecules scattered inside the triode ionization vacuum gauge, by measuring the value of the ion current, it is possible to measure the measurement object (such as vacuum) on which the triode ionization vacuum gauge is installed. processing device) internal pressure.
在此,如下述專利文獻1、2所記載,在氣體分子(正離子)往離子收集器之表面撞擊時,有氣體分子會吸附(例如物理吸附、化學吸附)於離子收集器之表面且形成分子層(物理吸附層、化學吸附層)的情況。 Here, as described in the following
離子收集器中軸方向之中央附近的區域係正離子之撞擊機率高的區域,藉由正離子持續地撞擊於該區域,中性破片分子、中性原子或此等之離子等的粒子便從分子層盡可能地被釋放出。因此,離子收集器中軸方向之中央附近的區域係被當作分子層不易被沉積的區域。另一方面,離子收集器中軸方向之兩端部附近的區域係正離子之撞擊機率低的區域,因正離子不持續地撞擊,因此被當作正離子容易作為分子層而沉積的區域。 The area near the center of the central axis of the ion collector is an area with a high impact probability of positive ions. By continuously impacting positive ions on this area, the particles of neutral fragment molecules, neutral atoms, or such ions are separated from the molecules. Layers are released as much as possible. Therefore, the area near the center of the ion collector in the axial direction is regarded as the area where the molecular layer is not easy to be deposited. On the other hand, the regions near both ends in the central axis direction of the ion collector are regions where the collision probability of positive ions is low, and since positive ions do not continuously collide, they are regarded as regions where positive ions are easily deposited as a molecular layer.
再者,作為與本案相關聯的技術,可列舉以下的專利文獻3及專利文獻4。 In addition, the following patent document 3 and patent document 4 are mentioned as a technique related to this application.
[先前技術文獻] [Prior Art Literature]
[專利文獻] [Patent Document]
專利文獻1:國際公開第2016/151997號公報。 Patent Document 1: International Publication No. 2016/151997.
專利文獻2:國際公開第2016/139894號公報。 Patent Document 2: International Publication No. 2016/139894.
專利文獻3:日本特開2006-343305號公報。 Patent Document 3: Japanese Unexamined Patent Publication No. 2006-343305.
專利文獻4:日本特開平5-66170號公報。 Patent Document 4: Japanese Patent Application Laid-Open No. 5-66170.
由於形成於離子收集器中軸方向之兩端部附近的分子層等之影響,有無法將測量對象物之內部的壓力正確地予以測量的問題。 Due to the influence of molecular layers formed near both ends of the ion collector in the axial direction, there is a problem that the internal pressure of the object to be measured cannot be accurately measured.
有鑑於如上情形,本發明之目的係在於提供一種可以將測量對象物之內部的壓力正確地予以測量的三極管型電離真空計。 In view of the above circumstances, an object of the present invention is to provide a triode type ionization vacuum gauge that can accurately measure the internal pressure of a measurement object.
為了達成上述目的,本發明的三極管型電離真空計係具備燈絲、柵極及離子收集器。前述柵極係配置於前述燈 絲之周圍。前述離子收集器係筒狀且配置於前述柵極之周圍,藉由300K下之熱傳導係數(thermal conductivity)為173W/(m˙K)以上的材料所構成。 In order to achieve the above object, the triode ionization vacuum gauge of the present invention includes a filament, a grid and an ion collector. The aforementioned grid is configured around the aforementioned filament. The aforementioned ion collector is cylindrical and arranged around the aforementioned grid, and is made of a material with a thermal conductivity of 173 W/(m˙K) or higher at 300K.
在該三極管型電離真空計中,離子收集器係藉由300K下之熱傳導係數為173W/(m˙K)以上的材料所構成。換句話說,離子收集器係藉由熱傳導係數高的材料所構成。藉此,在燈絲所產生的熱變得容易傳至離子收集器整體,即便是在離子收集器中之於軸方向之兩端部近旁,仍可以提高離子收集器之溫度。藉此,可以防止在離子收集器中之於軸方向之兩端部近旁形成有分子層之情形。結果,在該三極管型電離真空計中,可以正確地測量測量對象物之內部的壓力。 In this triode type ionization vacuum gauge, the ion collector is made of a material whose thermal conductivity at 300K is 173W/(m˙K) or more. In other words, the ion collector is made of materials with high thermal conductivity. Thereby, the heat generated in the filament can be easily transmitted to the whole ion collector, and the temperature of the ion collector can be raised even in the vicinity of both ends of the ion collector in the axial direction. Thereby, it is possible to prevent molecular layers from being formed in the vicinity of both ends in the axial direction of the ion collector. As a result, in this triode type ionization vacuum gauge, the pressure inside the object to be measured can be accurately measured.
在上述之三極管型電離真空計中,對前述燈絲之供給電力亦可為4W以下。 In the above-mentioned triode type ionization vacuum gauge, the electric power supplied to the above-mentioned filament may be 4W or less.
在此,在對燈絲之供給電力能夠被設為4W以下的小型之三極管型電離真空計中,由於在燈絲所產生的熱容易變低,所以會有溫度容易在離子收集器中之於軸方向之兩端部的近旁變低的問題。另一方面,如上述般,本發明的三極管型電離真空計係藉由熱傳導係數高的材料來構成離子收集器。因此即便是在對燈絲之供給電力能夠被設為4W以下且燈絲之熱容易變低的小型三極管型電離真空計中, 仍可以在離子收集器中於軸方向之兩端部的近旁適當地提高離子收集器之溫度。 Here, in a small triode type ionization vacuum gauge in which the power supply to the filament can be set to 4W or less, since the heat generated in the filament tends to be low, the temperature tends to be in the axial direction of the ion collector. The problem that the vicinity of the two ends becomes lower. On the other hand, as mentioned above, in the triode ionization vacuum gauge of the present invention, the ion collector is formed of a material with high thermal conductivity. Therefore, even in a small triode type ionization vacuum gauge in which the power supply to the filament can be set to 4W or less and the heat of the filament tends to be low, it is still possible to appropriately increase The temperature of the ion collector.
上述三極管型電離真空計亦可更具備支撐構件。前述支撐構件係支撐前述離子收集器,且藉由熱傳導係數比構成前述離子收集器之材料更低的材料所構成。 The above-mentioned triode type ionization vacuum gauge may further include a supporting member. The aforementioned supporting member supports the aforementioned ion collector, and is made of a material having a lower thermal conductivity than the material constituting the aforementioned ion collector.
藉此,可以防止離子收集器之熱往支撐構件散逸,且可以將離子收集器之熱維持於高狀態。 Thereby, the heat of the ion collector can be prevented from being dissipated to the supporting member, and the heat of the ion collector can be maintained in a high state.
上述三極管型電離真空計亦可更具備收容部。前述收容部係藉由金屬材料所構成,且將前述燈絲、前述柵極及前述離子收集器收容於內部。 The above triode type ionization vacuum gauge may further include a housing portion. The aforesaid accommodating part is made of metal material, and accommodates the aforesaid filament, the aforesaid grid and the aforesaid ion collector inside.
如此,藉由以金屬材料來構成收容部,可以防止熱電子撞擊於收容部時發生充電(charge up),且可以將收容部內之空間內的電位分布固定地維持。藉此,可以長時間以固定之靈敏度來測量壓力。 In this way, by constituting the housing portion with a metal material, it is possible to prevent charge-up from occurring when thermal electrons collide with the housing portion, and to maintain a constant potential distribution in the space in the housing portion. Thereby, the pressure can be measured with a fixed sensitivity for a long time.
本發明的壓力測量方法係準備三極管型電離真空計,且藉由前述三極管型電離真空計來測量測量對象物之內部的壓力,該三極管型電離真空計係具備:燈絲;柵極,係配置於前述燈絲之周圍;以及離子收集器,係筒狀且配置 於前述柵極之周圍,藉由300K下之熱傳導係數為173W/(m˙K)以上的材料所構成。 The pressure measuring method of the present invention prepares a triode type ionization vacuum gauge, and measures the internal pressure of the object to be measured by the aforementioned triode type ionization vacuum gauge. The triode type ionization vacuum gauge is equipped with: a filament; The periphery of the aforementioned filament; and the ion collector are cylindrical and arranged around the aforementioned grid, and are made of a material with a thermal conductivity of 173 W/(m˙K) or more at 300K.
如以上,依據本發明,可以提供一種能將測量對象物之內部的壓力正確地予以測量的三極管型電離真空計。 As described above, according to the present invention, it is possible to provide a triode type ionization vacuum gauge capable of accurately measuring the internal pressure of an object to be measured.
1‧‧‧正離子 1‧‧‧positive ion
2‧‧‧吸附分子 2‧‧‧adsorbed molecules
10‧‧‧感測器單元 10‧‧‧Sensor unit
11‧‧‧感測器本體(收容部) 11‧‧‧Sensor body (containment part)
11a‧‧‧凸緣部 11a‧‧‧flange
11b‧‧‧溝槽部 11b‧‧‧groove
11c‧‧‧底部 11c‧‧‧bottom
12‧‧‧燈絲 12‧‧‧Filament
13‧‧‧柵極 13‧‧‧Gate
14‧‧‧離子收集器 14‧‧‧ion collector
15、15a至15e‧‧‧端子 15, 15a to 15e‧‧‧terminal
16‧‧‧柵極支撐構件 16‧‧‧Grid support member
17‧‧‧離子收集器支撐構件(支撐構件) 17‧‧‧Ion collector support member (support member)
20‧‧‧控制單元 20‧‧‧Control Unit
21‧‧‧控制器 21‧‧‧Controller
22‧‧‧電流計 22‧‧‧galvanometer
23a至23c‧‧‧電源 23a to 23c‧‧‧Power
100‧‧‧三極管型電離真空計 100‧‧‧Triode Ionization Vacuum Gauge
Hf‧‧‧燈絲之高度 Hf‧‧‧Filament height
Hg‧‧‧柵極之高度 Hg‧‧‧Gate height
Hi‧‧‧離子收集器之高度 Hi‧‧‧The height of the ion collector
φg‧‧‧柵極之直徑 φg‧‧‧Gate diameter
φi‧‧‧離子收集器之直徑 φi‧‧‧Ion collector diameter
圖1係從側方觀察本發明之一實施形態的三極管型電離真空計之示意圖。 Fig. 1 is a schematic view of a triode type ionization vacuum gauge according to one embodiment of the present invention viewed from the side.
圖2係從上方觀察三極管型電離真空計的示意圖。 Fig. 2 is a schematic diagram of a triode type ionization vacuum gauge viewed from above.
圖3係顯示藉由離子收集器之材質各異的三極管型電離真空計所測量到的真空腔室內之壓力的圖。 Fig. 3 is a graph showing the pressure in the vacuum chamber measured by triode ionization vacuum gauges with different materials of ion collectors.
圖4係顯示在離子收集器是藉由300K下之熱傳導係數未滿173W/(m˙K)的材料所構成的比較例中,撞擊於離子收集器的正離子之移動樣態的示意圖。 FIG. 4 is a schematic diagram showing the movement of positive ions striking the ion collector in a comparative example in which the ion collector is made of a material whose thermal conductivity at 300K is less than 173 W/(m˙K).
圖5係顯示在離子收集器是藉由300K下之熱傳導係數為173W/(m˙K)以上的材料所構成的情況下,撞擊於離子收集器的正離子之移動樣態的示意圖。 5 is a schematic diagram showing the movement of positive ions impacting on the ion collector when the ion collector is made of a material with a thermal conductivity of 173 W/(m˙K) or higher at 300K.
以下,一邊參照圖式一邊說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖1係從側方觀察本發明之一實施形態的三極管型電離真空計100之示意圖。圖2係從上方觀察三極管型電離真空計100的示意圖。 FIG. 1 is a schematic view of a triode
如此等圖所示,三極管型電離真空計100係具備感測器單元(sensor unit)10和控制單元20。感測器單元10係具備感測器本體11(收容部)、燈絲12、柵極13、離子收集器14、複數個端子15a至15e、柵極支撐構件16及離子收集器支撐構件17(支撐構件)。 As shown in the drawings, the triode
感測器本體11係具有具備底部11c的圓筒狀之形狀,且在該感測器本體11之內部收容有燈絲12、柵極13、離子收集器14、複數個端子15a至15e、柵極支撐構件16及離子收集器支撐構件17。 The
感測器本體11係在感測器本體11之上部具有凸緣(flange)部11a,該凸緣部11a係用以將感測器單元10相對於真空腔室等的測量對象物裝卸自如地安裝。凸緣部11a中,在上側且內周側的位置係沿著圓周方向(θ方向)形成有用以收容O型環(O-ring)等之真空密封條(vacuum seal)的溝槽部11b。凸緣部11a是透過真空密封條而被固定於真空腔室等的測量對象物,藉此就能藉由三極管型電離真空計100來測量測量對象物內部的壓力。 The
感測器本體11係藉由不鏽鋼(stainless)、鎳(nickel)、鎳與鐵的合金、鋁合金、銅、銅合金、鈦(titanium)、鈦合金、鎢(tungsten)、鉬(molybdenum)、或是此等當中的二個以上之組合等的金屬材料所構成。該感測器本體11係被接地。 The
在感測器本體11之底部11c係透過絕緣體(未圖示)而插通有五支端子15a至15e。五支端子15a至15e係在Z軸方向較長的圓柱狀之構件。再者,有關端子之形狀,亦可為三角柱狀或四角柱狀等的形狀,有關端子之形狀並未被,特別限定。此等的端子例如是藉由鐵、鎳、鈷(cobalt)等的金屬材料所構成。 Five
五支端子15a至15e當中之二支端子15a、15b係與燈絲12連接的端子,一支端子15c係與柵極13連接的端子,其餘的二支端子15d、15e係連接於離子收集器14的端子。 Among the five
燈絲12係配置於感測器本體11之中心位置的近旁。燈絲12係具有髮夾狀(倒V字狀)之形狀,且藉由粗度例如為φ0.1mm至φ0.2mm左右之線狀構件在中央彎曲所形成。再者,燈絲12亦可具有直線狀之形狀,有關燈絲12之形狀係未被特別限定。 The
燈絲12之高度Hf(在燈絲12中比端子15a、15b更上 方之部分的高度)例如是設為5mm至15mm左右。 The height Hf of the filament 12 (the height of the portion of the
在燈絲12中,熱電子係從彎曲著的頂部放射。在燈絲12中彎曲著的頂部係在軸方向(Z軸方向)上位於柵極13及離子收集器14之中心(參照圖1)。又,即便是在水平方向上,燈絲12之頂部仍是位於柵極13及離子收集器14之中心(參照圖2)。 In the
燈絲12例如是藉由表面由氧化釔(yttrium oxide)所被覆之銥(iridium)、鎢等的金屬材料所構成。 The
燈絲12之一端側係電性地及機械性地連接於端子15a,燈絲12之另一端側係電性地及機械性地連接於端子15b。除了具有作為燈絲12之端子的任務以外,端子15a及端子15b亦具有作為從下方支撐燈絲12的支撐銷的任務。再者,在本實施形態中,對燈絲12之供給電力係設為4W以下。 One end of the
柵極13係於燈絲12之周圍與燈絲12同心配置。柵極13係具有螺旋狀之形狀,例如是藉由粗度為φ0.1mm至φ0.3mm左右之線狀構件捲繞成螺旋狀所形成。再者,柵極13亦可為藉由衝孔金屬片(punching metal sheet)、光蝕刻片(photoetching sheet)形成為筒狀所構成,有關柵極13之形狀係未被特別限定。 The
柵極13之高度Hg(參照圖1)係設為例如10mm至30mm左右,直徑φg(參照圖2)係設為例如5mm至15mm左右。再者,柵極13之高度Hg係設為燈絲12之高度Hf的二倍高度。 The height Hg (see FIG. 1 ) of the
柵極13例如是藉由鎢、鉬、表面由鉑所被覆的鉬、鉭(tantal)、鉑、銥、鉑與銥的合金、鎳、鎳與鐵的合金、不鏽鋼、或是此等當中的二個以上之組合等的金屬材料所構成。 The
柵極13之下端部係電性地及機械性地連接於端子15c。除了具有作為柵極13之端子的任務以外,端子15c亦具有作為從下方支撐柵極13的支撐銷的任務。在端子15c之上方係豎設有柵極支撐構件16。該柵極支撐構件16係在軸方向(Z軸方向)較長之例如圓柱狀的構件,抵接於柵極13之內周側,且能夠從內周側支撐柵極13。 The lower end of the
離子收集器14係於柵極13之周圍與柵極13同心配置。離子收集器14係具有圓筒狀之形狀,且藉由厚度0.05mm至0.3mm左右的板狀構件形成筒狀所構成。再者,只要離子收集器14為筒狀,則未被限於圓筒狀,亦可藉由角筒等的形狀所構成。 The
離子收集器14之高度Hi(參照圖1)係設為例如10mm 至30mm左右,離子收集器14之直徑φi(參照圖2)係設為例如10mm至30mm左右。再者,離子收集器14之高度Hi係設為與柵極13之高度Hg相同程度,又設為燈絲12之高度Hf的二倍之高度。 The height Hi (see FIG. 1 ) of the
離子收集器14係藉由300K下之熱傳導係數為173W/(m˙K)以上的金屬材料所構成。雖然離子收集器14之材料只要是具有上述特性的材料就可使用任何材料,不過例如可使用鎢、銅、石墨(graphite)等的金屬材料作為該材料。再者,有關使用如此的材料作為離子收集器14之材料的理由將於後面詳述。 The
離子收集器14係透過離子收集器支撐構件17來與端子15d及端子15e電性地及機械性地連接。除了具有作為離子收集器14之端子的任務以外,端子15d與端子15e亦具有作為從下方支撐離子收集器14的支撐銷的任務。 The
離子收集器支撐構件17係與端子15d、15e及離子收集器14電性地及機械性地連接,且一邊藉由端子15d、15e從下方支撐,一邊從下方支撐離子收集器14。離子收集器支撐構件17係在端子15d側與端子15e側分別配置一個。 The ion
該離子收集器支撐構件17係以厚度薄的板狀構件沿著離子收集器14之外周而彎曲的方式形成。在本實施形態 中,雖然離子收集器支撐構件17係在圓周方向(θ方向)形成為短的形狀,但是亦可遍及於離子收集器14之全周(360°)而設置。 The ion
離子收集器支撐構件17係藉由熱傳導係數比離子收集器14更低的材料所構成。雖然離子收集器支撐構件17之材料只要是熱傳導係數比離子收集器14更低的材料就可使用任何材料,不過例如可使用不鏽鋼(SUS304)、鐵、鎳、鈷等的金屬材料作為該材料。 The ion
控制單元20係具備框體,且在框體之內部內置有控制器21、電流計22、三個電源23a至23c等。控制器21係包含CPU(Central Processing Unit;中央處理單元)、或揮發性、非揮發性的記憶體(memory)等。 The
CPU係基於記憶體中所儲存的各種程式(program),整合地控制三極管型電離真空計100之各部。例如,CPU係執行控制各個電源23a至23c之動作的處理、或基於電流計22所測量到的離子電流值而算出壓力的處理、將所算出的壓力顯示於顯示器(display)(未圖示)上的處理等。 The CPU integrally controls each part of the triode
電流計22係測量於離子收集器14流動的離子電流值,且將所測量到的值往控制器21輸出。在三個電源23a至23c當中,第一電源23a係用以將直流電流通電至燈絲12 而使燈絲12赤熱的電源,第二電源23b係用以對柵極13賦予比燈絲12更高之電位的電源。又,第三電源23c係用以將燈絲12之電位提升為比離子收集器14之電位更高的電源。 The
再者,在框體係設置有導通至各個電源23的輸出端子(未圖示),感測器單元10及控制單元20係藉由附有連接器(connector)的電纜(cable)所連接。再者,感測器單元10及控制單元20亦可嵌入至同一框體之內部。 Furthermore, output terminals (not shown) leading to the power sources 23 are provided in the frame system, and the
其次,針對為了調查離子收集器14之熱傳導係數與所測量的壓力之關係所進行的試驗加以說明。在該試驗中,有準備七種類的材料作為離子收集器14之材料,且藉由離子收集器14之材料為不同的七種類之三極管型電離真空計100分別測量真空排氣時的真空腔室內之壓力。 Next, an experiment conducted to investigate the relationship between the thermal conductivity of the
表1係顯示被使用作為離子收集器14之材料的七種類之金屬材料與此等金屬材料中之300K下的熱傳導係數之關係。圖3係顯示藉由離子收集器14之材質各異的三極管型電離真空計100所測量到的真空腔室內之壓力的示意圖。 Table 1 shows the relationship between seven types of metal materials used as the material of the
再者,在該試驗中,可使用表面由氧化釔所被覆的銥作為燈絲12之材料,燈絲12之粗度係設為φ0.127mm(氧化釔被覆前)。又,燈絲12之高度Hf係設為10mm。 Furthermore, in this test, iridium whose surface is coated with yttrium oxide can be used as the material of the
又,可使用表面由鉑所被覆的鉬作為柵極13之材料,柵極13之粗度係設為φ0.25mm。又,柵極13之高度Hg係設為20mm,柵極13之直徑φg係設為10mm。 In addition, molybdenum whose surface is covered with platinum can be used as the material of the
又,如表1所示,使用了石墨、銅、鎢、鉬、鎳、鉑、不鏽鋼(SUS304)之七種類作為離子收集器14之材料。如表1所示,此等七種類的材料之300K下的熱傳導係數(面方向)係依順序為700W/(m˙K)、401W/(m˙K)、173W/(m˙K)、138W/(m˙K)、90.9W/(m˙K)、71.6W/(m˙K)、16W/(m˙K)。 Also, as shown in Table 1, seven kinds of graphite, copper, tungsten, molybdenum, nickel, platinum, and stainless steel (SUS304) were used as the material of the
又,離子收集器14之厚度係設為0.1mm,離子收集器14之高度Hi係設為20mm,離子收集器14之直徑φi係設為17mm。 Also, the thickness of the
又,使用了不鏽鋼(SUS304)作為離子收集器支撐構件17之材料。 Also, stainless steel (SUS304) was used as the material of the ion
又,燈絲12之電位係設為25V,柵極13之電位係設為150V,離子收集器14之電位係設為0V。又,對燈絲12之供給電力係設為4W以下,燈絲12與柵極13之間的放射電流(emission current)係設為1mA。 Also, the potential of the
再者,使用300K下之熱傳導係數為173W/(m˙K)以上的石墨、銅、鎢作為離子收集器14之材料的情況係對應於本發明的實施形態。另一方面,使用300K下之熱傳導係數未滿173W/(m˙K)的鉬、鎳、鉑、不鏽鋼(SUS304)作為離子收集器14之材料的情況係對應於比較例。 Furthermore, the use of graphite, copper, and tungsten whose thermal conductivity at 300K is 173 W/(m˙K) or higher as the material of the
參照圖3,於圖3係顯示有藉由離子收集器14之材質各異的三極管型電離真空計100所測量到的真空腔室內之壓力。在圖3中,縱軸係顯示所測量到的壓力,橫軸係顯示時間(整體為12小時)。再者,有關鉬、鎳、鉑,由於是成為大致相同的曲線,因此以相同的曲線來表示。 Referring to FIG. 3 , FIG. 3 shows the pressure in the vacuum chamber measured by the triode
在圖3中,結果是熱傳導係數最高的石墨之到達壓力(2×10-6Pa)最低,到達壓力會隨著熱傳導係數變低而慢慢地變高,且熱傳導係數最低的不鏽鋼(SUS304)之到達壓力(1×10-4Pa)則為最高。再者,到達壓力係壓力與真空排氣一起下降之後,壓力穩定而成為固定時的值。 In Figure 3, the result is that graphite with the highest thermal conductivity has the lowest reaching pressure (2×10 -6 Pa), and the reaching pressure will gradually increase as the thermal conductivity decreases, and stainless steel with the lowest thermal conductivity (SUS304) The reaching pressure (1×10 -4 Pa) is the highest. It should be noted that the attained pressure is a value when the pressure is stabilized and becomes a constant value after the pressure is lowered together with the evacuation.
根據該結果,可明白熱傳導係數變得越高,到達壓力就變得越低。換句話說,可明白在離子收集器14之熱傳導係數與到達壓力之間係存在反比的關係。 From this result, it can be understood that the higher the heat transfer coefficient becomes, the lower the reaching pressure becomes. In other words, it can be seen that there is an inverse relationship between the thermal conductivity of the
在圖3中係著眼於以下之比較例的二個曲線:與300K下之熱傳導係數未滿173W/(m˙K)的鉬、鎳、鉑對應的曲線;以及對應於不鏽鋼的曲線。此等曲線所示的壓力係隨著真空腔室內之壓力因真空排氣變低而慢慢地下降,下降至約2×10-5Pa(測量界限值)為止之後,慢慢地上升而到達約8×10-5Pa,之後呈穩定狀態。 In FIG. 3 , focus is placed on two curves of the following comparative example: the curve corresponding to molybdenum, nickel, and platinum whose thermal conductivity at 300K is less than 173W/(m˙K); and the curve corresponding to stainless steel. The pressure shown in these curves decreases slowly as the pressure in the vacuum chamber decreases due to vacuum exhaust, and then rises slowly to reach about 2×10 -5 Pa (measurement limit value) About 8×10 -5 Pa, and then in a stable state.
如此,當使用熱傳導係數較低的材料作為離子收集器14之材料時,就會發生所測量的壓力暫時下降之後,上升而成為某固定的值且呈穩定狀態的動作。 In this way, when a material with a low thermal conductivity is used as the material of the
以下,在離子收集器14藉由300K下之熱傳導係數未滿173W/(m˙K)的材料所構成的比較例中,針對壓力成為 如此之動作的理由加以說明。圖4係顯示離子收集器14是藉由300K下之熱傳導係數未滿173W/(m˙K)的材料所構成的比較例中,撞擊於離子收集器14的正離子1之移動樣態的示意圖。再者,為了方便起見,在圖4中係將柵極13省略而圖示。 Hereinafter, in a comparative example in which the
當燈絲12被通電時,熱電子就會從燈絲12之頂部附近放射,該熱電子係朝向柵極13加速而藉由柵極13所捕捉。熱電子之一部分係與飛散於三極管型電離真空器100內部的氣體分子在柵極13之近旁撞擊,藉此,氣體分子會被離子化而產生正離子1。 When the
正離子1係由離子收集器14所吸引而撞擊於離子收集器14,且從離子收集器14接收電子。 The
藉由正離子1從離子收集器14接收電子,在離子收集器14產生有離子電流,且能藉由電流計22來測量該離子電流的值。藉此,真空腔室之內部的壓力被測量。 When the
在圖3中係著眼在以下二個曲線:對應於不鏽鋼的曲線和對應於鉬、鎳及鉑的曲線。在此等曲線中,壓力相應於真空腔室之真空排氣而慢慢地下降時,氣體分子(正離子1)會往離子收集器之表面撞擊,往表面撞擊的氣體分子係形成一部分以氣體方式脫離,其餘一部分成為分子層(例如, 藉由吸附分子2所致的物理吸附層或化學吸附層等)的平衡狀態。 In FIG. 3 the focus is on two curves: the curve for stainless steel and the curves for molybdenum, nickel and platinum. In these curves, when the pressure decreases slowly corresponding to the vacuum exhaust of the vacuum chamber, the gas molecules (positive ions 1) will hit the surface of the ion collector, and the gas molecules hitting the surface will form part of the gas The remaining part becomes the equilibrium state of the molecular layer (for example, the physical adsorption layer or chemical adsorption layer caused by the adsorption of molecules 2).
再者,因鉑在化學上非常穩定,因此在離子收集器14是藉由鉑所構成的情況下,與其他例子相比,幾乎不會形成由化學吸附所致的分子層。換句話說,雖然圖4之存在於離子收集器14表面的氣體分子的示意圖係顯示在某個時間點的平衡狀態,但是在此以氣體分子(例如水分子)撞擊於離子收集器14表面的結果所形成的分子層係可認為物理吸附具有支配性。 Furthermore, since platinum is very stable chemically, when the
相對於在離子收集器14之表面上形成有由吸附所致的分子層之機率,在離子收集器14中軸方向之中央附近的區域係被作為正離子1高機率撞擊的區域,且為在平衡狀態下不易沉積分子層的區域。在該區域中,因分子層不易沉積,故即便正離子1對該區域撞擊仍不易釋放出中性分子、中性破片分子、中性原子或此等之離子等的粒子。 Relative to the probability of forming a molecular layer caused by adsorption on the surface of the
另一方面,因離子收集器14中軸方向之兩端部附近的區域係正離子1之撞擊機率比中央附近還低的區域,因此被作為隨著時間的經過分子層容易沉積的區域。當正離子1撞擊於已沉積的分子層時,就會釋放出中性分子、中性破片分子、中性原子或此等之離子等。 On the other hand, the regions near both ends in the central axis direction of the
分子從表面脫離的能量(energy)亦可以從作為分子運動的溫度考察。當從該觀點來觀察離子收集器14時,因軸方向之中央附近係靠近產生熱的燈絲12之頂部的區域,故成為溫度較高的區域(參照圖4)。因此,離子收集器14之軸方向中央附近的分子層係保持著比兩端部還高的能量。換句話說,與兩端部比較,中央附近之平衡狀態係可認為脫離具有支配性,兩端部則可認為吸附具有支配性。因此,從離子收集器14之溫度的觀點來看,在離子收集器14中軸方向之中央附近的區域係被作為分子層不易沉積的區域,軸方向之兩端部附近的區域係被作為分子層容易沉積的區域。 The energy of a molecule detaching from a surface can also be considered from the temperature as a molecular motion. When the
當從真空腔室之真空排氣開始起時間更進一步經過時,感測器本體11內的氣體分子之組成就會往與真空腔室之排氣能力相應的組成變化。一般而言,脫離相對於吸附較具優勢的氣體分子會優先地被排氣,結果,真空腔室內之吸附較具優勢的氣體分子會往優勢的組成變化。例如,可認為感測器本體11內的氣體之組成係往以下之組成變化:不易從真空腔室被排氣之水分子已增加的組成。當然,離子收集器14表面之分子層的組成亦會相應於作為測量對象的真空腔室內之組成的變化而變化。 As time elapses further from the start of evacuation of the vacuum chamber, the composition of gas molecules in the
起因於感測器本體11內之氣體分子的組成不易變化等,在離子收集器14表面區域整體中,會往吸附比脫離還 具優勢的平衡狀態變化。但是,該變化之過程是緩慢的,可謂在作為實驗例的圖3中之12h/經過9小時的時間點中並無法明確地確認,在12h/經過9小時後至經過12h的期間中可以確認該變化。換句話說,可認為最終的平衡狀態係已經過12h的時間點。此可認為是顯示真空腔室內之組成在12h/經過9小時的時間點附近,已從通常的大氣組成比率變化成吸附優勢的氣體組成。 Due to the fact that the composition of gas molecules in the
雖然在圖3中是具有真空排氣系統的環境,該真空排氣系統係在1.0×10-3Pa以下發現吸附優勢之氣體組成環境,但是從大氣開放時間點至真空排氣開始當初的氣體組成係與初期狀態的大氣組成沒有大差異。換句話說,在離子收集器14表面區域整體中是成為脫離優勢的平衡狀態,且為不進行吸附的狀況。換句話說,在該當初的狀況中將圖3中的各種材料之時間變化曲線的切線作為一次函數之斜率的值時,就可以從全部成為負值的情形來確認。 In Fig. 3, it is an environment with a vacuum exhaust system, and the vacuum exhaust system is a gas composition environment where an adsorption advantage is found below 1.0×10 -3 Pa, but the gas from the time when the atmosphere was opened to the start of vacuum exhaust There is no big difference between the composition system and the atmospheric composition of the initial state. In other words, the entire surface area of the
但是,在1.0×10-4Pa以下,伴隨氣體組成之變動,離子收集器14表面上的組成開始變化之情形可以從圖3之變動中確認。雖然在圖3中係省略了由其他的真空度測量裝置所測量到的真空度之記載,但是因石墨的值接近真空腔室中之真正的真空度,因此本應顯示與石墨同樣的真空度。但是,其他的素材之真空度會慢慢地惡化,也就是說雖然斜率為負的,不過仍顯示往零接近的傾向。 However, below 1.0×10 −4 Pa, the composition on the surface of the
此是因當初的離子收集器14表面之組成是從大氣組成變化為吸附優勢之氣體組成,藉此會在離子收集器14表面之分子層的厚度發生變化所致。在到達該真空度以前並不會發生差異。 This is because the original composition of the surface of the
因該現象係已成為吸附優勢之氣體組成,故與之前相較會顯示被吸附的面之溫度條件變得具有支配性的情形。換句話說,在圖3之材料彼此的比較中,可認為具有更低溫面的材料容易吸附氣體分子,且增加了其吸附量,換句話說,增加了分子層的厚度。 Since this phenomenon is due to the gas composition that has become dominant in adsorption, it appears that the temperature condition of the surface to be adsorbed becomes more dominant than before. In other words, in the comparison of the materials in FIG. 3 , it can be considered that the material with a lower temperature surface is easier to adsorb gas molecules, and the amount of adsorption is increased, in other words, the thickness of the molecular layer is increased.
在此,當正離子1撞擊(入射)於已增加該厚度的分子層時,被給予入射能量的分子層之分子就會脫離。雖然有關詳細的物理現象有待今後的研究,但是根據圖3等可認為相對於往該真空度中的三極管型電離真空計之離子收集器表面的正離子之入射而脫離的分子之量係與分子層之厚度存在比例關係。 Here, when the
換句話說,因具有藉由分子層之厚度增加而所釋放出(脫離)的分子增大之關係,因此脫離的分子亦會隨著在1.0×10-4Pa以下平衡狀態成為吸附優勢而增大,且該已脫離的分子能再次藉由真空計所計測,結果,真空度之測量值的斜率會往零側偏移(shift)。 In other words, since there is a relationship that the released (detached) molecules increase due to the increase in the thickness of the molecular layer, the detached molecules will also increase as the equilibrium state below 1.0×10 -4 Pa becomes an adsorption advantage. Large, and the detached molecules can be measured by the vacuum gauge again, as a result, the slope of the measured value of the vacuum degree will shift to the zero side (shift).
一般而言,吸附/脫離係在已移行至平衡狀態的階段穩定化。換句話說,可認為在真空度的測量值之斜率已成為零的時間點,吸附/脫離是平衡狀態。雖然使用真空計的使用者係將已成為該平衡狀態的時間點辨識作為測量界限,且視為該真空計之能力差,但是當該測量界限與時間一起變動時,難以與本來之真空度已惡化之情形區別,又變動本身作為測量器會給使用者帶來不信任感,根據此可以說要作為商品是有問題的。 In general, the adsorption/desorption system stabilizes at a stage that has shifted to an equilibrium state. In other words, it can be considered that the adsorption/desorption is in an equilibrium state at the point in time when the slope of the measured value of the degree of vacuum has become zero. Although users who use vacuum gauges recognize the point in time when the equilibrium state has been reached as the measurement limit, and consider the vacuum gauge to be poor in capability, when the measurement limit changes with time, it is difficult to compare with the original vacuum degree. The situation of deterioration is different, and the change itself as a measuring device will bring distrust to users. From this, it can be said that it is problematic to use it as a product.
換句話說,雖然必須避開將斜率從零轉成正的真空度予以計測的情形,但是有關包含鉑的該材料會發生此問題現象。此是因離子收集器14表面之溫度低,換句話說,與其他的材料相較,由於相對於正離子之入射頻率的脫離與吸附之平衡狀態為吸附側,故會更進一步使分子層沉積並增加厚度,結果,會增大藉由正離子之入射所引起的分子之脫離量所致。 In other words, although it is necessary to avoid the measurement of the vacuum degree whose slope changes from zero to positive, this problematic phenomenon occurs with respect to the material containing platinum. This is because the temperature of the surface of the
在12h/經過9小時後至經過12h的期間中,上述斜率成為正的原因係因在已沉積於離子收集器14之軸方向之兩端部附近(溫度低的部位)的分子層中,該分子層會成為分子之釋放源所致。換句話說,在離子收集器14是由包含鉑的各種材料所構成的情況下,受到該釋放源所釋放出的分子之影響,會有感測器本體11內之壓力局部地成為高的 壓力,且成為與作為測量對象物的真空腔室內之壓力不同的壓力的問題。因此,有無法正確地測量真空腔室內之壓力的問題。 In the period from 12h/after 9 hours to 12h, the reason why the above-mentioned slope becomes positive is that in the molecular layer that has been deposited near both ends of the
其次,針對為了判斷吸附分子2主要是何種分子所進行的測量加以說明。在該測量中,與上述同樣,準備了七種不同材質的離子收集器14(石墨、銅、鎢、鉬、鎳、鉑、不鏽鋼(SUS304))之三極管型電離真空計。然後,在進行真空腔室之真空排氣之後,在燈絲12斷開(OFF)時以及燈絲12導通(ON)時,藉由四極柱式質譜儀(quadruple mass spectrometer)來測量出感測器本體11內的氣體分子之質譜(mass spectrum)。 Next, the measurement performed to determine what kind of molecules the adsorbed
結果,在對應於熱傳導係數低之鉬、鎳、鉑及不鏽鋼的四個材料的三極管型電離真空計(比較例)中,燈絲12導通時的質譜中的水之峰值比燈絲12斷開時的質譜的水之峰值更顯著地變大。 As a result, in the triode type ionization vacuum gauge (comparative example) corresponding to the four materials of molybdenum, nickel, platinum and stainless steel with low thermal conductivity, the peak value of water in the mass spectrum when the
此是顯示燈絲12導通時飛散於感測器本體11內的水分子之量遠多於燈絲12斷開時飛散於感測器本體11內的水分子之量的情形。該結果係顯示吸附分子2主要是水分子。 This shows that the amount of water molecules scattered in the
換句話說,在燈絲12斷開時,由於水分子不會成為正離子1,所以水分子不會由離子收集器14所吸引,因此水分子作為吸附分子2而吸附於離子收集器14的量少。因此,在燈絲12斷開時,因沒有水分子之釋放源,故飛散於感測器本體11內的水分子之量係與真空腔室內的水分子之量大致相同,且該水分子之量少。 In other words, when the
在燈絲12導通時,水分子成為正離子1,且水分子由離子收集器14所吸引。又,由於是藉由熱傳導係數低的材料構成離子收集器14,所以水分子會作為吸附分子2而沉積於離子收集器14。然後,因已沉積的水分子會成為水分子之釋放源,因此在燈絲12導通時,飛散於感測器本體11內的水分子之量變得遠多於燈絲12斷開時。 When the
此係顯示燈絲12導通時的質譜中的水之峰值,比燈絲12斷開時的質譜的水之峰值更顯著地變大的結果,因此可明白吸附分子2主要是水分子。 This shows that the peak of water in the mass spectrum when the
在此的測量中,即便有關在化學上非常穩定的鉑,結果仍是燈絲12導通時的質譜中的水之峰值比燈絲12斷開時的質譜的水之峰值更顯著地變大。換句話說,此顯示了以下情形:以在比較例中壓力成為不穩定的理由而言,由化學吸附所致的分子層之形成並非是主要原因,由水分子之吸附所致的分子層之形成才是主要原因(因鉑不易形成 由化學吸附所致的分子層)。 In this measurement, even for platinum which is chemically very stable, it turned out that the peak of water in the mass spectrum when the
再者,即便是在與熱傳導係數高之石墨、銅、鎢的三種材料對應的三極管型電離真空計100(本實施形態)中,雖然燈絲12導通時的質譜中的水之峰值仍成為比燈絲12斷開時的質譜的水之峰值更大,但是該差異小。此是顯示在本實施形態中於燈絲12導通時,水分子所吸附的量變得遠少於比較例之情形。 Furthermore, even in the triode type ionization vacuum gauge 100 (present embodiment) corresponding to three materials of graphite, copper, and tungsten with high thermal conductivity, although the peak value of water in the mass spectrum when the
如以上說明,在藉由300K下之熱傳導係數未滿173W/(m˙K)的材料構成離子收集器14的比較例中,水分子往離子收集器14之吸附為所測量的壓力變得不正確之主要原因。 As explained above, in the comparative example in which the
於是,在本實施形態中,為了防止吸附分子2(特別是水分子)之發生,藉由300K下之熱傳導係數為173W/m˙K)以上的材料(例如,石墨、銅、鎢)來構成離子收集器14。 Therefore, in this embodiment, in order to prevent the occurrence of adsorbed molecules 2 (especially water molecules), the thermal conductivity at 300K is 173W/m˙K) or more (for example, graphite, copper, tungsten).
圖5係顯示離子收集器14是藉由300K下之熱傳導係數為173W/(m˙K)以上的材料所構成的情況下,撞擊於離子收集器14的正離子1之移動樣態的示意圖。再者,在圖5中係為了方便起見而省略圖示柵極13。 FIG. 5 is a schematic diagram showing the movement of
如圖5所示,在本實施形態中,由於是藉由熱傳導係數高的材料來構成離子收集器14,所以可以將在燈絲12產生的熱有效率地傳至離子收集器14之整體。因此,在離子收集器14中不僅在軸方向(Z軸方向)之中心部,就連在軸方向之兩端部附近也可以提高溫度,且可以提高離子收集器14整體的溫度。 As shown in FIG. 5 , in this embodiment, since the
因此,在圖5中係與比較例的圖4不同,在離子收集器14之軸方向的兩端部附近,作為正離子1撞擊於離子收集器14的氣體分子從離子收集器14脫離用的能量會變高。藉此,可以防止吸附分子2(特別是水分子)之發生。 Therefore, in Fig. 5, it is different from Fig. 4 of the comparative example, near both ends of the axial direction of the
再者,在上述試驗中,實際測量了由石墨、銅、鎢所構成的離子收集器14之溫度,結果是超過210度的溫度。在此可知道只要離子收集器14之溫度成為200度以上就可以防止水分子等的吸附,亦可根據此而明白在本實施形態中可以適當地防止吸附分子2之發生。再者,在上述試驗中,實際測量了由鉬、鎳、鉑、不鏽鋼(SUS304)所構成的離子收集器14(比較例)之溫度,結果是160°至180°。 Furthermore, in the above test, the temperature of the
如以上,在本實施形態中,由於可以防止吸附分子2之發生,所以可以防止如比較例般所測量的壓力變得不正確之情形,且可以正確地測量真空腔室等的測量對象物內部的壓力。 As described above, in this embodiment, since the generation of adsorbed
此情形顯示於圖3中對應於石墨、銅、鎢的曲線中。亦即,如此等的曲線所示般,在本實施形態中,所測量的壓力係隨著真空腔室內之壓力因真空排氣變低而慢慢地下降,且在下降至預定的值(測量界限值)之後,在該狀態下穩定而取固定的值。 This situation is shown in the curves corresponding to graphite, copper, tungsten in FIG. 3 . That is, as shown by such curves, in the present embodiment, the measured pressure gradually decreases as the pressure in the vacuum chamber becomes lower due to vacuum exhaust, and drops to a predetermined value (measured After that, it stabilizes in this state and takes a fixed value.
在此,在本實施形態中,對燈絲12之供給電力係設為4W以下。在對燈絲12之供給電力能被設為4W以下的小型之三極管型電離真空計100中,由於在燈絲12產生的熱容易變低,所以當不採取任何對策時,就有溫度容易在離子收集器14中於軸方向之兩端部的近旁變低的問題。 Here, in this embodiment, the electric power supplied to the
另一方面,如上述般,本實施形態的三極管型電離真空計100係藉由熱傳導係數高的材料來構成離子收集器14。因此,即便是在對燈絲12之供給電力能被設為4W以下之燈絲12之熱容易變低的小型之三極管型電離真空計100中,仍可以在離子收集器14中於軸方向之兩端部的近旁適當地提高離子收集器14之溫度。 On the other hand, as described above, in the triode
又,在本實施形態中,離子收集器支撐構件17係藉由熱傳導係數比構成離子收集器14之材料更低的材料所構成。因此,可以防止離子收集器14之熱往離子收集器支撐構件17散逸,且可以將離子收集器14之熱維持高狀態。 In addition, in the present embodiment, the ion
又,在本實施形態中,感測器本體11係藉由金屬材料所構成。如此,藉由以金屬材料來構成感測器本體11,可以防止來自燈絲12之熱電子撞擊於感測器本體11時發生充電,且可以將感測器本體11內之空間內的電位分布固定地維持。藉此,可以長時間以固定之靈敏度來測量壓力。 Moreover, in this embodiment, the
在此,為了對離子收集器14防止吸附分子2之發生,可考慮切削離子收集器14之軸方向(Z軸方向)的兩端部,降低離子收集器14之高度Hi。然而,當如此地降低離子收集器14之高度Hi時,有使離子收集器14中的正離子1之捕捉效率降低之虞。 Here, in order to prevent the generation of adsorbed
另一方面,在本實施形態中係藉由熱傳導係數高的材料來構成離子收集器14,藉此可以防止吸附分子2之發生,所以沒有必要降低離子收集器14之高度Hi。因此,在本實施形態中可以不使離子收集器14中的正離子1之捕捉效率降低地適當地防止吸附分子2之發生。再者,如上述般,在本實施形態中,離子收集器14之高度Hi係燈絲12之高度Hf的約二倍,且設為與柵極13之高度Hg同等的高度。 On the other hand, in this embodiment, the
再者,此趣旨並非一定要提高離子收集器14之高度Hi,例如亦可以將離子收集器14之高度Hi設為比柵極13之高度Hg更低的高度。 Furthermore, the purpose is not necessarily to increase the height Hi of the
10‧‧‧感測器單元 10‧‧‧Sensor unit
11‧‧‧感測器本體(收容部) 11‧‧‧Sensor body (containment part)
11a‧‧‧凸緣部 11a‧‧‧flange
11b‧‧‧溝槽部 11b‧‧‧groove
11c‧‧‧底部 11c‧‧‧bottom
12‧‧‧燈絲 12‧‧‧Filament
13‧‧‧柵極 13‧‧‧Gate
14‧‧‧離子收集器 14‧‧‧ion collector
15a至15e‧‧‧端子 15a to 15e‧‧‧terminal
16‧‧‧柵極支撐構件 16‧‧‧Grid support member
17‧‧‧離子收集器支撐構件(支撐構件) 17‧‧‧Ion collector support member (support member)
20‧‧‧控制單元 20‧‧‧Control Unit
21‧‧‧控制器 21‧‧‧Controller
22‧‧‧電流計 22‧‧‧galvanometer
23a至23c‧‧‧電源 23a to 23c‧‧‧Power
100‧‧‧三極管型電離真空計 100‧‧‧Triode Ionization Vacuum Gauge
Hf‧‧‧燈絲之高度 Hf‧‧‧Filament height
Hg‧‧‧柵極之高度 Hg‧‧‧Gate height
Hi‧‧‧離子收集器之高度 Hi‧‧‧The height of the ion collector
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JP4196367B2 (en) * | 1999-05-21 | 2008-12-17 | キヤノンアネルバ株式会社 | Ionization gauge |
EP1698878A1 (en) * | 2005-03-04 | 2006-09-06 | Inficon GmbH | Electrode configuration and pressure measuring apparatus |
KR20080017929A (en) * | 2006-08-23 | 2008-02-27 | 한국표준과학연구원 | Apparatus and method of desorbed gas species and quantities measurements from ionization gauges using residual gas analyzer |
KR100806960B1 (en) * | 2006-08-31 | 2008-02-22 | 한국표준과학연구원 | Vacuum gauge using hot plate and cantilever |
JP4926233B2 (en) * | 2009-12-08 | 2012-05-09 | キヤノンアネルバ株式会社 | Combined vacuum gauge |
ITRM20120427A1 (en) * | 2012-09-03 | 2014-03-04 | Consiglio Nazionale Ricerche | THERMOIONIC CONVERTER DEVICE |
CN107407611B (en) * | 2015-03-03 | 2019-08-02 | 株式会社爱发科 | Triode type ion gauge |
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JPH0566170A (en) * | 1991-09-06 | 1993-03-19 | Anelva Corp | Ionization vacuum gauge |
JP2008233079A (en) * | 2007-03-16 | 2008-10-02 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | Ionization vacuum gauge |
CN102138070A (en) * | 2009-03-18 | 2011-07-27 | 株式会社爱发科 | Method for detecting oxigen, method for determining air leakage, gas component detector, and vacuum processor |
WO2016151997A1 (en) * | 2015-03-23 | 2016-09-29 | 株式会社アルバック | Triode type ionization vacuum gauge |
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KR20190006434A (en) | 2019-01-18 |
JP6932892B2 (en) | 2021-09-08 |
JP2019015666A (en) | 2019-01-31 |
CN109238559A (en) | 2019-01-18 |
TW201908706A (en) | 2019-03-01 |
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