TWI781496B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- TWI781496B TWI781496B TW109143907A TW109143907A TWI781496B TW I781496 B TWI781496 B TW I781496B TW 109143907 A TW109143907 A TW 109143907A TW 109143907 A TW109143907 A TW 109143907A TW I781496 B TWI781496 B TW I781496B
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- 239000000758 substrate Substances 0.000 title claims abstract description 217
- 239000007788 liquid Substances 0.000 claims abstract description 131
- 238000003860 storage Methods 0.000 claims abstract description 53
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- -1 polytetrafluoroethylene Polymers 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 description 55
- 238000004140 cleaning Methods 0.000 description 40
- 230000007246 mechanism Effects 0.000 description 37
- 238000010129 solution processing Methods 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 12
- 230000036544 posture Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000000725 suspension Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000003028 elevating effect Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000011084 recovery Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
本發明之基板處理裝置具備:處理液吐出部,其設置於由基板保持部保持之基板之下方側,對貯存空間吐出處理液,於貯存空間內形成處理液之流動;及氣泡供給部,其具有於貯存空間內配置於由基板保持部保持之基板之下方側之配管,及於處理液之流動方向自配管突設之中空狀突設部位;且將經由配管送往突設部位之氣體,自設置於突設部位之前端之氣泡吐出口吐出,對貯存於貯存空間之處理液內供給氣泡。The substrate processing apparatus of the present invention is provided with: a processing liquid discharge part, which is provided on the lower side of the substrate held by the substrate holding part, discharges the processing liquid to the storage space, and forms a flow of the processing liquid in the storage space; and a bubble supply part, which There is a pipe arranged on the lower side of the substrate held by the substrate holding part in the storage space, and a hollow protruding part protruding from the pipe in the flow direction of the processing liquid; and the gas sent to the protruding part through the pipe, Air bubbles are discharged from the air bubble outlet provided at the front end of the protruding part, and air bubbles are supplied to the treatment liquid stored in the storage space.
Description
本發明係關於一種將基板浸漬於貯存於處理槽之藥液或純水等處理液中,且於處理液內對上述基板供給氣泡並進行處理之基板處理裝置。The present invention relates to a substrate processing apparatus that immerses a substrate in a processing liquid such as chemical liquid or pure water stored in a processing tank, and supplies air bubbles to the substrate in the processing liquid to process the substrate.
於半導體裝置之製造領域中,為了應對於半導體裝置之高密度化與大容量化,期望形成高縱橫比之凹部之技術。例如,三維NAND型非揮發性半導體裝置(以下,稱為「3D-NAND記憶體」)之製造過程中,包含以下步驟:對積層有多數氧化矽膜(SiO2膜)與氮化矽膜(SiN膜)之積層體於積層方向形成凹部後,經由凹部將SiN膜藉由濕蝕刻去除。為了執行該步驟,例如研討有使用日本專利特開2016-200821號公報所記載之基板處理裝置。In the field of manufacturing semiconductor devices, in order to cope with the increase in density and capacity of semiconductor devices, a technique of forming recesses with high aspect ratios is desired. For example, the manufacturing process of three-dimensional NAND type non-volatile semiconductor devices (hereinafter referred to as "3D-NAND memory") includes the following steps: stacking a plurality of silicon oxide films (SiO2 films) and silicon nitride films (SiN After forming a recess in the lamination direction of the laminated body of the film), the SiN film is removed by wet etching through the recess. In order to execute this step, for example, the use of a substrate processing apparatus described in Japanese Patent Application Laid-Open No. 2016-200821 has been considered.
使用基板處理裝置進行上述濕蝕刻之情形時,使用SiN膜之蝕刻劑之一例即包含磷酸之藥液作為處理液。更具體而言,基板處理裝置中,於形成於處理槽之內部之貯存空間之內底部配置噴出管,自該噴出管對貯存空間供給處理液。因此,處理槽中,處理液一面自處理槽溢流一面以一定量貯存於處理槽中。且,將具有上述凹部構造之基板浸漬於貯存於處理槽之處理液中。又,基板處理裝置中,與噴出管同樣,將氣泡供給管配置於貯存空間之內底部,自貯存空間之內底部向溢流面供給氣泡。該等氣泡於處理液內上升而供給於基板。藉由此種對基板之氣泡供給,可對凹部迅速且連續地供給新鮮處理液。When performing the above-mentioned wet etching using a substrate processing apparatus, a chemical solution containing phosphoric acid, which is an example of an etchant for the SiN film, is used as a processing solution. More specifically, in the substrate processing apparatus, a discharge pipe is disposed at the bottom of a storage space formed inside a processing tank, and a processing liquid is supplied from the discharge pipe to the storage space. Therefore, in the treatment tank, a certain amount of the treatment liquid is stored in the treatment tank while overflowing from the treatment tank. And, the substrate having the above-mentioned concave structure is immersed in the processing liquid stored in the processing tank. In addition, in the substrate processing apparatus, the air bubble supply pipe is arranged at the inner bottom of the storage space similarly to the discharge pipe, and the air bubbles are supplied from the inner bottom of the storage space to the overflow surface. These bubbles rise in the processing liquid and are supplied to the substrate. By supplying such air bubbles to the substrate, fresh processing liquid can be rapidly and continuously supplied to the concave portion.
雖於日本專利特開2016-200821號公報中未記載氣泡供給管之詳細構成,但基板處理裝置中,多使用將多孔質材料加工成管狀者(日本專利特開2003-40649號公報),或對筒狀構件以一定間隔行狀設置複數個貫通孔者(日本專利特開2009-98270號公報)等作為氣泡供給管。若自氣體供給源對該等氣泡供給管輸送氮氣等氣體,則該氣體自設置於氣泡供給管表面之複數個開口(多孔質孔或貫通孔)吐出,藉此對處理液內供給氣泡。如此供給之氣泡之尺寸大於開口尺寸。係由於氣泡如下供給之故。即,氣泡產生後,氣泡立即密著於氣泡供給管之表面中之開口周圍。且,隨著時間經過,密著區域以開口為中心放射狀擴展後,氣泡自氣泡供給管之開口及密著區域脫離,供給於處理液內。Although the detailed structure of the bubble supply tube is not described in Japanese Patent Laid-Open No. 2016-200821, in substrate processing equipment, porous materials are often used to process porous materials into tubular shapes (Japanese Patent Laid-Open No. 2003-40649), or A tube that provides a plurality of through-holes at regular intervals in a row (Japanese Patent Application Laid-Open No. 2009-98270) or the like is used as a bubble supply tube. When a gas such as nitrogen gas is supplied to the bubble supply tubes from a gas supply source, the gas is discharged from a plurality of openings (porous holes or through holes) provided on the surface of the bubble supply tubes, thereby supplying bubbles into the treatment liquid. The size of the air bubbles thus supplied is larger than the opening size. This is because air bubbles are supplied as follows. That is, immediately after the generation of air bubbles, the air bubbles adhere closely around the opening in the surface of the air bubble supply pipe. Then, as time passes, after the adhered region expands radially around the opening, the air bubbles escape from the opening and the adhered region of the bubble supply pipe, and are supplied into the treatment liquid.
如此,先前技術中,有氣泡尺寸大於作為氣泡之吐出口發揮功能之開口之尺寸,難以有效進行利用氣泡供給對基板表面供給新鮮處理液之問題。又,日本專利特開2016-200821號公報或日本專利特開2009-98270號公報所記載之基板處理裝置中,由於使複數塊基板以一定間隔隔開且一起進行處理,故氣泡難以進入基板之間。因此,先前之基板處理裝置中,提高基板之處理品質有一定界限。Thus, in the prior art, there is a problem that the size of the bubbles is larger than the size of the opening functioning as the discharge port of the bubbles, and it is difficult to efficiently supply fresh processing liquid to the surface of the substrate by supplying the bubbles. Also, in the substrate processing apparatus described in Japanese Patent Laid-Open No. 2016-200821 or Japanese Patent Laid-Open No. 2009-98270, since a plurality of substrates are separated and processed together at a certain interval, it is difficult for air bubbles to enter between the substrates. between. Therefore, in the prior substrate processing apparatus, there is a limit to improving the processing quality of the substrate.
本發明係鑑於上述問題而完成者,其目的在於將基板浸漬於貯存於處理槽之處理液中,且於處理液中對上述基板供給氣泡並進行處理之基板處理裝置中,縮小氣泡尺寸並提高處理品質。The present invention has been made in view of the above problems, and its object is to reduce the size of the bubbles and improve Handling quality.
本發明提供一種基板處理裝置,其特徵在於具備:處理槽,其具有貯存處理液之貯存空間,藉由將基板浸漬於貯存於貯存空間之處理液中而對基板進行處理;基板保持部,其於貯存空間內將基板以豎立姿勢保持;處理液吐出部,其設置於由基板保持部保持之基板之下方側,對貯存空間吐出處理液,於貯存空間內形成處理液之流動;及氣泡供給部,其具有於貯存空間內配置於由基板保持部保持之基板之下方側之配管,及於處理液之流動方向自配管突設之中空狀突設部位,將經由配管送往突設部位之氣體自設置於突設部位之前端之氣泡吐出口吐出,對貯存於貯存空間之處理液內供給氣泡。The present invention provides a substrate processing device, which is characterized by comprising: a processing tank having a storage space for storing a processing liquid, and processing the substrate by immersing the substrate in the processing liquid stored in the storage space; a substrate holding part, which The substrate is held in an upright position in the storage space; the processing liquid discharge part is provided on the lower side of the substrate held by the substrate holding part, and discharges the processing liquid to the storage space to form a flow of the processing liquid in the storage space; and air bubble supply part, which has a pipe arranged in the storage space on the lower side of the substrate held by the substrate holding part, and a hollow projecting part protruding from the pipe in the flow direction of the processing liquid, and will be sent to the projecting part through the pipe The gas is discharged from the bubble discharge port provided at the front end of the protruding part, and the gas bubbles are supplied to the processing liquid stored in the storage space.
如上所述,根據本發明,氣泡供給部之氣泡吐出口設置於自配管突設之突設部位之前端而非設於配管。因此,可將氣泡供給部中之氣泡自氣泡吐出口脫離且於即將供給於處理液前密著之密著區域限定於突設部位之前端面,可較於配管之側壁設有氣泡吐出口時更狹小化。其結果,可縮小氣泡尺寸,提高處理品質。As described above, according to the present invention, the bubble discharge port of the bubble supply unit is provided at the front end of the protruding portion protruding from the piping instead of the piping. Therefore, the air bubbles in the air bubble supply part can be detached from the air bubble outlet and the adhering area immediately before being supplied to the treatment liquid can be limited to the front end surface of the protruding part, which can be more efficient than when the side wall of the pipe is provided with the air bubble outlet. Narrow down. As a result, the bubble size can be reduced and the treatment quality can be improved.
上述本發明之各態樣具有之複數個構成要件並非全部為必須者,為解決上述問題之部分或全部,或為達成本說明書中記載之效果之部分或全部,可適當對上述複數個構成要件之部分構成要件進行其變更、刪除或替換為新的其他構成要件,可進行限定內容之部分刪除。又,為解決上述問題之部分或全部,或為達成本說明書中記載之效果之部分或全部,亦可使上述本發明之一態樣所含之技術性特徵之部分或全部與上述本發明之其他態樣所含之技術性特徵之部分或全部組合,作為本發明之獨立之一形態。Not all of the plurality of constituent requirements of the above-mentioned aspects of the present invention are essential, and in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in this specification, the above-mentioned plurality of constituent requirements can be appropriately adjusted. Part of the constituent elements may be changed, deleted, or replaced with new other constituent elements, and part of the limited content may be deleted. In addition, in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in this specification, part or all of the technical features contained in the above-mentioned aspects of the present invention may be combined with those of the above-mentioned present invention. A combination of some or all of the technical features contained in other aspects is regarded as an independent form of the present invention.
圖1係顯示裝備本發明之基板處理裝置之第1實施形態之基板處理系統之概略構成之俯視圖。基板處理系統1具備收納器載置部2、擋板驅動機構3、基板移載機器人4、姿勢轉換機構5、推桿6、基板搬送機構7、處理單元8、及控制部9。為統一顯示以下各圖之方向,如圖1所示設定XYZ正交座標軸。此處,XY平面表示水平面。又,Z軸表示鉛垂軸,更詳細而言,Z方向為鉛垂方向。FIG. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with a substrate processing apparatus according to a first embodiment of the present invention. The
收納器載置部2中,載置已收納基板W之收納器。本實施形態中,作為收納器之一例,使用可將水平姿勢之複數塊(例如25塊)基板W以於Z方向積層之狀態收納而構成之環帶F。環帶F以收納有未處理基板W之狀態載置於收納器載置部2,或為了收納已處理基板W,而以空的狀態載置於收納器載置2。收納於環帶F之基板W於本實施形態中,為形成3D-NAND記憶體之半導體晶圓,具有高縱橫比之凹部。The container in which the substrate W has been stored is placed on the
對收納器載置部2於(+Y)方向側相鄰之製程空間內,配置有擋板驅動機構3、基板移載機器人4、姿勢轉換機構5、推桿6、基板搬送機構7及處理單元8。收納器載置部2與製程空間由裝備開閉自如之擋板31之隔板(省略圖示)區劃。擋板31連接於擋板驅動機構3。擋板驅動機構3根據來自控制部9之關閉指令,關閉擋板31,將收納器載置部2與製程空間予以空間性分離。相反地,擋板驅動機構3根據來自控制部9之打開指令,打開擋板31,使收納器載置部2與製程空間連通。藉此,可自環帶F向製程空間搬入未處理基板W,及將已處理基板W向環帶F搬出。In the process space adjacent to the
上述基板W之搬入搬出處理藉由基板移載機器人4進行。基板移載機器人4構成為於水平面內迴旋自如。基板移載機器人4於擋板31打開之狀態,於姿勢轉換機構5與環帶F間交接複數塊基板W。又,姿勢轉換機構5經由基板移載機器人4自環帶F接收基板W後,或將基板W交接給環帶F前,將複數塊基板W之姿勢於豎立姿勢與水平姿勢間進行轉換。The loading and unloading process of the above-described substrate W is performed by the
於姿勢轉換機構5之基板搬送機構7側(該圖中之+X方向側)配置推桿6,於姿勢轉換機構5與基板搬送機構7間交接豎立姿勢之複數塊基板W。又,基板搬送機構7如該圖所示,自與推桿6對向之位置(以下,稱為「待機位置」)沿構成處理單元8之處理部81~85所排列之排列方向(該圖中之Y方向)於水平方向移動。A
基板搬送機構7具備一對懸垂臂71。可藉由該一對懸垂臂71之搖動,將複數塊基板W一起進行保持與解除保持之切換。更具體而言,各臂71之下緣於彼此分開之方向繞水平軸搖動,放開複數塊基板W,使各臂71之下緣於彼此接近之方向繞水平軸搖動,夾持並保持複數塊基板W。又,雖省略對圖1之圖示,但基板搬送機構7具有臂移動部與臂搖動部。該等中之臂移動部具有使一對懸垂臂71沿處理部81~85所排列之排列方向Y水平移動之功能。因此,藉由該水平移動,將一對懸垂臂71定位於與處理部81~85之各者對向之位置(以下,稱為「處理位置」)及待機位置。The
另一方面,臂搖動部具有執行上述臂搖動動作之功能,切換將基板W夾持並保持之保持狀態,與解除基板W之夾持之解除狀態。因此,藉由該切換動作,及作為處理部81、82之基板保持部發揮功能之升降機810a或作為處理部83、84之基板保持部發揮功能之升降機810b之上下移動,而可進行升降機810與懸垂臂71間之基板W之交接。又,與處理部85對向之處理位置上,可進行處理部85與懸垂臂71間之基板W之交接。再者,於待機位置上,可經由推桿6進行姿勢轉換機構5與懸垂臂71間之基板W之交接。On the other hand, the arm swing unit has a function of executing the above-mentioned arm swing operation, and switches between a holding state in which the substrate W is clamped and held, and a released state in which the clamping of the substrate W is released. Therefore, by this switching operation, the
於處理單元8如上述般設有5個處理部81~85,分別作為第1藥液處理部81、第1清洗處理部82、第2藥液處理部83、第2清洗處理部84及乾燥處理部85發揮功能。該等中之第1藥液處理部81及第2藥液處理部83分別將同種或不同種藥液貯存於處理槽821,將複數塊基板W一起浸漬於該藥液中,實施藥液處理。第1清洗處理部82及第2清洗處理部84分別係將清洗液(例如純水)貯存於處理槽821,將複數塊基板W一起浸漬於該清洗液中,對表面實施清洗處理者。該等第1藥液處理部81、第1清洗處理部82、第2藥液處理部83及第2清洗處理部84相當於本發明之基板處理裝置之第1實施形態,雖處理液之種類不同但裝置之基本構成相同。另,對於裝置構成及動作,於下文一面參照圖2至圖5一面詳述。The
如圖1所示,第1藥液處理部81及與其相鄰之第1清洗處理部82成對,第2藥液處理部83及與其相鄰之第2清洗處理部84成對。且,升降機810a於第1藥液處理部81及第1清洗處理部82中不僅作為本發明之「基板保持部」發揮功能,亦作為用以將以第1藥液處理部81進行藥液處理後之基板W移至第1清洗處理部82之專用搬送機構發揮功能。又,升降機810b於第2藥液處理部83及第2清洗處理部84中不僅作為本發明之「基板保持部」發揮功能,亦作為用以將以第2藥液處理部83進行藥液處理後之基板W移至第2清洗處理部84之專用搬送機構發揮功能。As shown in FIG. 1 , the first chemical
如此構成之處理單元8中,升降機810a之3根支持構件(圖2中之符號812)自基板搬送機構7之一對懸垂臂71一起接收複數塊基板W。又,處理單元8中,如於下文詳述,與執行使處理液自處理槽溢流之溢流步驟及對貯存於處理槽之處理液內供給氣泡之氣泡供給步驟並行,升降機810a使複數塊基板W一起下降至第1藥液處理部81之處理槽中,並浸漬於藥液中(浸漬步驟)。再者,待機特定之藥液處理時間後,升降機810a將保持複數塊基板W之支持構件自藥液中提起。且,升降機810a使支持構件向第1清洗處理部82橫行,進而使保持藥液處理過之基板W之狀態之支持構件向第1清洗處理部82之處理槽(圖2中之符號821)內下降,並浸漬於清洗液中。待機特定之清洗處理時間後,升降機810a使保持清洗處理過之基板W之狀態之支持構件上升,將基板W自清洗液中提起。其後,將複數塊基板W自升降機810a之支持構件一起交給基板搬送機構7之一對懸垂臂71。In the
升降機810b亦同樣,自基板搬送機構7之一對懸垂臂71一起併接收複數塊基板W,使該複數塊基板W下降至第2藥液處理部83之處理槽821中,並浸漬於藥液中。再者,待機特定之藥液處理時間後,升降機810b使支持構件上升,將藥液處理過之複數塊基板W自藥液中提起。且,升降機810b使支持構件向第2清洗處理部84之處理槽橫行,進而使該支持構件向第2清洗處理部84之處理槽821內下降,並浸漬於清洗液中。待機特定之清洗處理時間後,第2升降機810b使支持構件上升,將基板W自清洗液中提起。其後,將複數塊基板W自第2升降機810b一起交給基板搬送機構7。另,亦可構成為於第1藥液處理部81、第1清洗處理部82、第2藥液處理部83及第2清洗處理部84之各者,設置作為本發明之「基板保持部」發揮功能之升降機,另一方面,以基板搬送機構7或專用之搬送機構進行基板W對處理部81~84之搬入搬出。Likewise, the
乾燥處理部85係如下者:具有可將複數塊(例如52塊)基板W以豎立姿勢排列之狀態予以保持之基板保持構件(省略圖示),藉由於減壓氛圍中將有機溶劑(異丙醇等)供給於基板W,或藉由離心力甩掉基板W表面之液體成分,而使基板W乾燥。該乾燥處理部85構成為可與基板搬送機構7之一對懸垂臂71間交接基板W。且,一起自基板搬送機構7接收清洗處理後之複數塊基板W,對該複數塊基板W實施乾燥處理。又,乾燥處理後,將複數塊基板W一起自基板保持構件交給基板搬送機構7。The drying
接著,針對本發明之基板處理裝置進行說明。裝備於圖1所示之基板處理系統之第1藥液處理部81、第1清洗處理部82、第2藥液處理部83及第2清洗處理部84中,使用之處理液部分不同,但裝置構成及動作基本相同。因此,以下,針對相當於本發明之基板處理裝置之第1實施形態之第1藥液處理部81之構成及動作進行說明,省略第1清洗處理部82、第2藥液處理部83及第2清洗處理部84相關之說明。Next, the substrate processing apparatus of the present invention will be described. In the first chemical
圖2係顯示本發明之基板處理裝置之第1實施形態之概略構成之模式圖。圖3係模式性顯示圖2所示之基板處理裝置之主要構成之分解組裝立體圖。圖4係圖2之部分剖視圖。圖5係顯示保持於升降機之複數塊基板與氣泡吐出口之配置關係之模式圖。第1藥液處理部81例如為使用包含磷酸之藥液作為處理液,經由形成於基板W之表面之凹部將氮化矽膜蝕刻去除之裝置。該第1藥液處理部81如圖2及圖3所示,具備用以對基板W進行第1藥液處理之處理槽821。該處理槽821具有上方開口之盒構造,其以俯視時呈長方形之底壁821a,及自底壁821a周圍立起之4個側壁821b~821e構成。因此,處理槽821可於由底壁821a與側壁821b~821e包圍之貯存空間821f內貯存處理液,且一起浸漬由升降機810a保持之複數塊基板W。又,處理槽821具有朝(+Z)方向開口之上方開口821g,可使處理液自該貯存空間821f溢流。Fig. 2 is a schematic diagram showing the schematic configuration of the first embodiment of the substrate processing apparatus of the present invention. FIG. 3 is an exploded perspective view schematically showing the main components of the substrate processing apparatus shown in FIG. 2 . FIG. 4 is a partial sectional view of FIG. 2 . Fig. 5 is a schematic diagram showing the disposition relationship between a plurality of substrates held in an elevator and air bubble outlets. The first chemical
於處理槽821周圍設有溢流槽822,以該溢流槽822與處理槽821之側壁821b~821e形成回收溢流之處理液之回收空間822a。又,以包圍處理槽821及溢流槽822之下方與側方之方式,設有外容器823。An
於溢流槽822之一部分回收空間822a,更具體而言,於側壁821d之(-X)方向側之空間,配置有流量配管系統839。流量配管系統839之入口連接於處理液供給部832,出口連接於處理液吐出口830之流量管831。因此,若根據來自控制部9之處理液供給指令,處理液供給部832動作,便會將處理液經由流量配管系統839同時供給至複數個流量管831。其結果,自流量管831吐出處理液,並貯存於貯存空間821f。另,關於流量管831之詳細構成等,會於下文詳述。A
又,將自處理槽821溢流之處理液回收至溢流槽822。於該溢流槽822連接有處理液回收部833。若根據來自控制部9之處理液回收指令,處理液回收部833動作,則回收至溢流槽822之處理液會經由處理液回收部833,送液至處理液供給部832供再利用。如此,本實施形態中,可一面對處理槽821循環供給處理液,一面將處理液貯存於貯存空間821f。Also, the treatment liquid overflowing from the
為了將複數塊基板W一同保持且浸漬於貯存有處理液之貯存空間821f,如圖2所示,設有升降機810a。該升降機810a構成為可於將複數塊基板W於和基板搬送機構7(圖1)之間進行交接之「交接位置」、與貯存空間821f之間升降。升降機810a具備背板811、3根支持構件812、及延伸構件813。背板811沿處理槽821之側壁821b向底壁821a延伸。支持構件812自背板811之下端部側面向(-X)方向延伸。本實施形態中,設有3根支持構件812。各支持構件812中,複數個V字狀槽812a以一定間距配設於X方向。各槽812a係寬度較基板W之厚度略寬之V字狀槽812a朝(+Z)方向開口而形成,可卡合基板W。因此,可藉由3根支持構件812,將由基板搬送機構7搬送之複數塊基板W以一定之基板間距PT(圖5)一併保持。又,延伸構件813自背板811之上端部背面向(+X)方向延伸。升降機810a如圖2所示,全體呈L字狀。另,升降機810a之最上升位置,設定為即使於基板搬送機構7保持複數塊基板W之狀態下,亦可通過支持構件812之上方之高度。In order to hold and immerse a plurality of substrates W together in the
於處理槽821之(+X)方向側,設有升降機驅動機構814。升降機驅動機構814具備升降馬達815、滾珠螺桿816、升降基座817、升降支柱818、及馬達驅動部819。升降馬達815以縱置旋轉軸之狀態安裝於基板處理系統1之框架(省略圖示)。滾珠螺桿816連結於升降馬達815之旋轉軸。升降基座817之一側與滾珠螺桿816螺合。升降支柱818之基端部側安裝於升降基座817之中央部,另一端部側安裝於延伸構件813之下表面。若根據來自控制部9之上升指令,馬達驅動部819使升降馬達815驅動,則滾珠螺桿816旋轉,升降支柱818與升降基座817一起上升。藉此,將支持構件812定位於交接位置。又,若根據來自控制部9之下降指令,馬達驅動部819使升降馬達815於反方向驅動,則滾珠螺桿816逆旋轉,升降支柱818與升降基座817一起下降。藉此,將由支持構件812保持之複數塊基板W,一同浸漬於貯存於貯存空間821f之處理液中。On the (+X) direction side of the
貯存空間821f中,於由支持構件812保持之複數塊基板W之下方側,即(-Z)方向側,配設有處理液吐出部830與氣泡供給部840。處理液吐出部830係將自處理液供給部832經由流量配管系統839供給之處理液吐出至貯存空間821f者,氣泡供給部840係對貯存於貯存空間821f之處理液內供給氮氣之氣泡V(圖5)者,分別如下構成。In the
處理液吐出部830如圖3及圖4所示,具有於X方向延伸設置之流量管831。本實施形態中,4條流量管831於Y方向互相隔開配置。各流量管831之(-X)方向端部係與流量配管系統839之出口連接,(+X)方向端部密封。又,複數個處理液吐出口834係以一定間隔排列於X方向之方式穿設於各流量管831之側壁。本實施形態中,如圖4所示,各處理液吐出口834朝向(-Z)方向設置。因此,供給於流量管831之處理液於配管內部於(+X)方向流動,自各處理液吐出口834向底壁821a,即貯存空間821f之內底面821h吐出。且,處理液如圖4中之實線箭頭所示,經由貯存空間821f之內底面821h流動至上方,形成自處理槽821之底壁821a朝向上方開口821g即溢流面之處理液之流動F。如此,處理液之上升流形成於基板W之下方側。另,為了容易理解發明內容,將4條流量管831中配置於最(-Y)方向側者稱為「流量管831a」,將依序配置於(+Y)方向側者分別稱為「流量管831b」、「流量管831c」及「流量管831d」。又,不區分該等之情形時,如上所述,簡稱為「流量管831」。As shown in FIGS. 3 and 4 , the processing
氣泡供給部840如圖3至圖5所示,具有複數根(本實施形態中為4根)起泡器841。各起泡器841具有延伸設置於X方向之氣泡配管842,及自氣泡配管842向上方,即(+Z)方向突設之複數個突設部位843。各氣泡配管842之一端部與供給氮氣之氣體供給部844連接,另一端部密封。複數個突設部位843以與一定之基板間距PT相同之間距PT設置於氣泡配管842之上方側壁。各突設部位843具有中空狀,例如如圖3所示,具有中空圓柱形狀,於上端面之中央部設有氣泡吐出口845。本實施形態中,藉由對以樹脂材料,尤其選自包含聚醚醚酮(PEEK)、全氟烷氧基烷烴(PFA)、及聚四氟乙烯(PTFE)之群之至少一者構成之長型樹脂管之表面實施切削加工與穿設加工,而一體形成氣泡配管842與複數個突設部位843。此處,當然亦可個別準備氣泡配管842與複數個突設部位843,對氣泡配管842安裝複數個突設部位843使之一體化。As shown in FIGS. 3 to 5 , the
如此構成之氣泡供給部840中,若根據來自控制部9之氣泡供給指令,氣體供給部844將氮氣供給於氣泡供給部840,則流動於氣泡配管842之氮氣自氣泡吐出口845向上方吐出。藉此,氮氣之氣泡V供給於貯存在貯存空間821f之處理液,於鉛垂方向Z上,自高於處理液吐出口834之位置向朝溢流面之方向即(+Z)方向供給氣泡V。該等氣泡V於處理液中上升,促進基板W表面之處理液置換成新鮮處理液。另,作為氣體供給部844,例如亦可為自填充有氮氣之氣瓶供給氮氣之構成,亦可使用設置於設有基板處理系統1之工廠之設備。In the
又,如圖4所示,藉由4根起泡器841由3個起泡器板851自下方被支持,而於由升降機810a保持之基板W之下方側且處理液吐出口834之上方側固定配置。此處,為容易理解本發明內容,將4根起泡器841中配置於最(-Y)方向側者稱為「起泡器841a」,將依序配置於(+Y)方向側者分別稱為「起泡器841b」、「起泡器841c」及「起泡器841d」。又,不區分該等之情形時,如上所述,簡稱為「起泡器841」。另一方面,對於起泡器板851亦同樣,將起泡器板851中配置於最(-Y)方向側者稱為「起泡器板851a」,將依序配置於(+Y)方向側者分別稱為「起泡器板851b」及「起泡器板851c」。又,不區分該等之情形時,如上所述,簡稱為「起泡器板851」。Also, as shown in FIG. 4 , four
起泡器板851a~851c均具有於X方向延設之板形狀。該等中之起泡器板851a如圖4所示,於鉛垂方向Z高於處理液吐出口834之位置,配置於流量管831a與流量管831b間,且藉由固定構件(省略圖示)固定於處理槽821。且,起泡器841a以滿足以下之配置關係之方式固定於該起泡器板851a之上表面。其配置關係如圖5所示,係安裝於起泡器841a之突設部位843朝向上方,及X方向上基板W與氣泡吐出口845交替配置。藉由如此配置,自氣泡吐出口845供給之氣泡V於X方向上向相鄰之基板W間吐出氣泡V,執行有效率之藥液處理。另,該配置關係對於其他起泡器841b~841d亦同樣。The
起泡器板851b於鉛垂方向Z上高於處理液吐出口834之位置,配置於流量管831b與流量管831c間,且藉由固定構件(省略圖示)固定於處理槽821。且,於該起泡器板851b之上表面,以於Y方向隔出一定間隔之方式固定起泡器841b、841c。再者,起泡器板851c於鉛垂方向Z上高於處理液吐出口834之位置,配置於流量管831c與流量管831d間,且藉由固定構件(省略圖示)固定於處理槽821。且,於該起泡器板851c之上表面固定有起泡器841d。如此,起泡器板851a~851c具有自下方支持氣泡供給部840之功能。The
又,由於起泡器板851a~851c於鉛垂方向Z上高於處理液吐出口834之位置,配置於流量管831a~831d間,故除上述支持功能外,具有限制經由貯存空間821f之內底面821h流動至上方之處理液之流動F的功能。起泡器板851a~851c彼此隔開形成成為處理液之流通路徑之貫通部位852a、852b。且,流量管831b、831c之下端部以進入之方式配置於貫通部位852a、852b。又,於與流量管831b、831c同一高度位置,流量管831a配置於起泡器板851a之(-Y)方向側,且流量管831d配置於起泡器板851a之(+Y)方向側。並且,於起泡器板851a~851c及流量管831a~831d中互相相鄰者彼此之間,形成有間隙86。因此,處理液之上升流中向起泡器板851之下表面流動之處理液(以下,稱為「分流對象液」)之流動F於該下表面受限制,於水平面內甩開。例如,圖4之部分放大圖中,朝向起泡器板851c之下表面之分流對象液之流動F分流成流動於起泡器板851c與流量管831c之間隙86之處理液之流動F5,及流動於起泡器板851c與流量管831d之間隙86之處理液之流動F6。又,其他起泡器板851a、851b中,亦與起泡器板851c同樣,分流對象液之流動F受限制,分流成複數個處理液之流動F1~F4。In addition, since the
如此,本實施形態中,經由貯存空間821f之內底面821h流動至上方之一部分處理液(分流對象液)之流動F分流成複數個流動F1~F6,並向溢流面上升。如此,本實施形態中,起泡器板851a~851c將經由貯存空間821f之內底面821h流動至上方之至少一部分處理液作為分流對象液,將該分流對象液之流動F分流成複數個上升流,引導至由升降機810a保持之基板W,作為分流部850(圖3)發揮功能。Thus, in this embodiment, the flow F of a part of the processing liquid (divided liquid) flowing upward through the
另,雖一面參照圖2至圖5,一面針對相當於本發明之基板處理裝置之第1實施形態之第1藥液處理部81之構成進行了說明,但第2藥液處理部83亦除處理液之種類為同種或不同種之方面外,具有與第1藥液處理部81相同之構成,相當於本發明之基板處理裝置之第1實施形態。又,第1清洗處理部82及第2清洗處理部84除處理液為純水或DIW(deionized water:去離子水)等清洗液之方面外,具有與第1藥液處理部81相同之構成,相當於本發明之基板處理裝置之第1實施形態。In addition, while referring to FIGS. 2 to 5 , the structure of the first chemical
如上所述,本實施形態中,將複數個中空狀之突設部位843自氣泡配管842向上方突設,且自設置於各突設部位843之前端之氣泡吐出口845突出氮氣,對處理液內供給氣泡V。因此,可縮小氣泡V之尺寸。一面將圖6所示之比較例與本實施形態(圖5)進行對比,一面說明其詳細理由。As described above, in the present embodiment, a plurality of hollow protruding
圖6係顯示第1實施形態之基板處理裝置之比較例之模式圖。該比較例中,於氣泡配管842之側壁設置氣泡吐出口845,自該氣泡吐出口845吐出氮氣,對處理液內供給氣泡V。該情形時,氣泡V產生後,氣泡V立即於氣泡配管842之側壁表面中之氣泡吐出口845周圍密著。如此,氣泡V與起泡器841密著之區域(以下,稱為「密著區域」),會隨著時間經過而沿起泡器841之表面擴展,例如如圖6之部分放大圖所示,氣泡V成長為比較大之大致圓頂狀。其後,氣泡V自氣泡吐出口845及密著區域脫離,被供給至處理液內。Fig. 6 is a schematic diagram showing a comparative example of the substrate processing apparatus of the first embodiment. In this comparative example, a
相對於此,本實施形態中,氣泡V產生後氣泡V立即密著處為突設部位843之前端面。因此,隨著時間經過,密著區域以氣泡吐出口845為中心放射狀擴展,但若到達其前端面之周緣(突設部位843之前端階差部位),則例如如圖5之部分放大圖所示般,密著區域之擴展會受到限制。藉此,氣泡V之成長停止,於該時點,氣泡V自氣泡吐出口845及密著區域脫離,被供給至處理液內。如此,第1實施形態中,即將供給至處理液內前氣泡V密著之密著區域,係限定於突設部位843之前端面。其結果,第1實施形態中,氣泡V之尺寸與比較例(圖6)相比較小,可提高處理品質。On the other hand, in this embodiment, immediately after the generation of the air bubbles V, the place where the air bubbles V closely adheres is the front end surface of the protruding
尤其,為了使第1藥液處理部81經由高縱橫比之凹部對SiN膜進行濕蝕刻,將本發明應用於第1藥液處理部81,對於3D-NAND記憶體之製造很重要。即,為了提高濕蝕刻性能,需要於凹部之內部與外部間良好地進行處理液之置換。又,雖於凹部之底附近產生伴隨蝕刻反應之矽析出,但可藉由處理液之置換,將上述矽自凹部排出。為穩定且持續地表現該液體置換,需要增大凹部之內部與外部之濃度差即濃度梯度。進而言之,為滿足其等,藉由降低氣泡尺寸來對基板W之表面有效率地供給新鮮處理液成為重要之技術事項。關於該點,根據可有效縮小氣泡V之尺寸之第1藥液處理部81,可藉由該氣泡V促進新鮮處理液之供給,良好地進行SiN膜之濕蝕刻。In particular, it is important for the manufacture of 3D-NAND memory to apply the present invention to the first chemical
又,如圖5之部分放大圖所示,由於X方向上基板W與氣泡吐出口845以交替配置之方式配置於起泡器841d,故可朝彼此相鄰之基板W之間有效率地供給小尺寸之氣泡V。其結果,可高品質地進行基板處理(藥液處理或清洗處理)。In addition, as shown in the partially enlarged view of FIG. 5 , since the substrate W and the
如此,第1實施形態中,(+Z)方向相當於本發明之「處理液之流動方向」之一例。又,氣泡配管842相當於本發明之「配管」之一例。又,X方向相當於本發明之「水平方向」。Thus, in the first embodiment, the (+Z) direction corresponds to an example of the "flow direction of the treatment liquid" in the present invention. In addition, the bubble piping 842 corresponds to an example of the "piping" of the present invention. In addition, the X direction corresponds to the "horizontal direction" of the present invention.
另,本發明並非限定於上述實施形態,只要不脫離其主旨,則除上述者外可進行各種變更。例如,上述實施形態中,使用設有中空圓柱狀之突設部位843之起泡器841,自氣泡配管842供給氣泡V,但起泡器841之構成並非限定於此。作為中空狀之突起部位,例如如圖7所示,亦可使用自氣泡配管842突設中空圓錐台形狀之突設部位846者(第2實施形態)。根據該第2實施形態,突設部位846之前端面之表面積窄於第1實施形態採用之中空圓柱形狀之突設部位843,可供給更小尺寸之氣泡V。其結果,可以更高品質執行基板處理。In addition, this invention is not limited to the said embodiment, Unless it deviates from the summary, various changes other than the above can be added. For example, in the above-mentioned embodiment, the
又,上述第1實施形態及第2實施形態中,突設部位843、846之前端面為圓形,但該形狀並非限定於此,係為任意。例如如圖8所示,亦可使用前端面具有橢圓形狀之突設部位847、878。總之,較佳為使用具有柱狀形狀、或越靠前端外徑尺寸越小之漸細形狀之突設部位。In addition, in the above-mentioned first embodiment and second embodiment, the front end surfaces of the protruding
又,亦可對突設部位843、846~848之前端實施電漿處理。藉由該電漿處理,該前端,即氣泡吐出口845周圍經親水化,促進氣泡V之脫離。其結果,可進而縮小氣泡V之尺寸。In addition, plasma treatment may be performed on the front ends of the protruding
又,上述實施形態中,處理液吐出部830包含4條流量管831,但流量管831之條數並非限定於此,較佳為根據貯存空間821f或基板W之尺寸等設定。又,氣泡供給部840所含之起泡器841之根數為4根,但起泡器841之根數並非限定於此,較佳為根據貯存空間821f或基板W之尺寸等設定。又,分流部850所含之起泡器板851之塊數為3塊,但起泡器841之根數並非限定於此,較佳為根據貯存空間821f或基板W之尺寸等設定。In addition, in the above embodiment, the processing
又,上述實施形態中,由分流部850之起泡器板851支持起泡器841,並將其於貯存在貯存空間821f之處理液內固定配置,且藉由該起泡器板851將經由內底面821h流動至上方之處理液之流動F分流成複數個流動。此處,例如亦可將本發明應用於將起泡器板851直接固定於處理槽821之、即未設置分流部850之基板處理裝置。In addition, in the above-mentioned embodiment, the
又,上述實施形態中,將氮氣送入起泡器841,將氮氣之氣泡V供給於處理液內,但亦可使用氮氣以外之氣體作為本發明之「氣體」。In addition, in the above-mentioned embodiment, nitrogen gas is fed into the
又,上述實施形態中,將本發明應用於自流量管831向貯存空間821f之內底面821h吐出處理液之基板處理裝置,但本發明之處理液之供給態樣並非限定於此。例如,亦可將本發明應用於自基板之下方側向上方或斜上方吐出,或如日本專利特開2016-200821號公報般,沿貯存空間之內底面吐出之基板處理裝置。In addition, in the above-mentioned embodiment, the present invention is applied to a substrate processing apparatus that discharges the processing liquid from the
再者,上述實施形態中,將本發明應用於藉由包含磷酸之藥液進行藥液處理之基板處理裝置或進行清洗處理之基板處理裝置,但本發明之應用範圍並非限定於此,亦可將本發明應用於將基板浸漬於上述藥液或清洗液以外之處理液中,且於處理液內對上述基板供給氣泡而進行基板處理之基板處理技術全體。Furthermore, in the above-mentioned embodiment, the present invention is applied to a substrate processing apparatus that performs chemical solution treatment with a chemical solution containing phosphoric acid or a substrate processing apparatus that performs cleaning treatment, but the scope of application of the present invention is not limited thereto, and may be The present invention is applied to an overall substrate processing technology in which a substrate is immersed in a processing liquid other than the above-mentioned chemical liquid or cleaning liquid, and bubbles are supplied to the above-mentioned substrate in the processing liquid to perform substrate processing.
以上,依照特定之實施例說明了發明,但該說明未意欲以限定性意義解釋。若參照發明之說明,則與本發明之其他實施形態同樣,揭示之實施形態之各種變化例係精通該技術者所明瞭。因此認為,隨附之申請專利範圍於不脫離發明之真實範圍內,包含該變化例或實施形態。As mentioned above, although the invention was described based on the specific embodiment, this description is not intended to be construed in a limited sense. As with other embodiments of the present invention, various modifications of the disclosed embodiments will be clear to those skilled in the art when referring to the description of the invention. Therefore, it is believed that the appended patent claims include such variations or embodiments within the true scope of the invention.
本發明可應用於將基板浸漬於貯存於處理槽之藥液或純水等處理液中,且於處理液中對上述基板供給氣泡並處理之基板處理裝置全體。The present invention can be applied to an entire substrate processing apparatus that immerses a substrate in a processing liquid such as a chemical solution or pure water stored in a processing tank, and supplies air bubbles to the substrate in the processing liquid to process the substrate.
以下所示之日本申請案之說明書、圖式及申請專利範圍之揭示內容,係以引用之方式將其全部內容併入本說明書中:The disclosures of the description, drawings and scope of the patent application of the Japanese application shown below are all incorporated into this specification by reference:
日本特願2019-236758號(2019年12月26日申請)Japanese Patent Application No. 2019-236758 (applied on December 26, 2019)
日本特願2020-130002號(2020年7月31日申請)。Japanese Special Application No. 2020-130002 (apply on July 31, 2020).
1:基板處理系統 2:收納器載置部 3:擋板驅動機構 4:基板移載機器人 5:姿勢轉換機構 6:推桿 7:基板搬送機構 8:處理單元 9:控制部 31:擋板 71:懸垂臂 81:第1藥液處理部(基板處理裝置) 82:第1清洗處理部(基板處理裝置) 83:第2藥液處理部(基板處理裝置) 84:第2清洗處理部(基板處理裝置) 85:處理部 86:間隙 810:升降機(基板保持部) 810a:升降機(基板保持部) 810b:升降機(基板保持部) 811:背板 812:支持構件 812a:V字狀槽 813:延伸構件 814:升降機驅動機構 815:升降馬達 816:滾珠螺桿 817:升降基座 818:升降支柱 819:馬達驅動部 821:處理槽 821a:底壁 821b~821e:側壁 821f:貯存空間 821g:上方開口 821h:內底面 822:溢流槽 822a:回收空間 823:外容器 830:處理液吐出部 831:流量管 831a~831d:流量管 832:處理液供給部 833:處理液回收部 834:處理液吐出口 839:流量配管系統 840:氣泡供給部 841:起泡器 841a~841d:起泡器 842:氣泡配管 843:突設部位 844:氣體供給部 845:氣泡吐出口 846~848:突設部位 850:分流部 851:起泡器板 851a~851c:起泡器板 852a:貫通部位 852b:貫通部位 F:環帶 F1~F6:流動 PT:間距 V:氣泡 W:基板1: Substrate processing system 2: Receiver loading part 3: Baffle drive mechanism 4: Substrate transfer robot 5: Posture conversion mechanism 6: putter 7: Substrate transfer mechanism 8: Processing unit 9: Control Department 31: Baffle 71: Suspension arm 81: The first chemical solution processing part (substrate processing device) 82: The first cleaning processing part (substrate processing device) 83: The second chemical solution processing part (substrate processing device) 84:Second cleaning processing part (substrate processing device) 85: Processing Department 86: Clearance 810: Elevator (substrate holding part) 810a: Elevator (substrate holding part) 810b: Elevator (substrate holding part) 811: Backplane 812: Support components 812a: V-shaped groove 813: extension member 814: Elevator drive mechanism 815:Lift motor 816: ball screw 817:Lift base 818:Lifting pillar 819:Motor drive department 821: processing tank 821a: bottom wall 821b~821e: side wall 821f: storage space 821g: top opening 821h: inner bottom surface 822: overflow tank 822a:Reclaim space 823: outer container 830: Treatment liquid discharge part 831: flow tube 831a~831d: flow tube 832:Processing liquid supply unit 833: Treatment liquid recovery department 834: treatment liquid outlet 839: Flow piping system 840:Bubble supply unit 841: Bubbler 841a~841d: bubbler 842: Bubble piping 843: Protruding parts 844: gas supply 845:Bubble outlet 846~848: Protruding parts 850:Shunt 851: bubbler board 851a~851c: bubbler plate 852a: through part 852b: through part F: ring belt F1~F6: flow PT: Pitch V: Bubble W: Substrate
圖1係顯示裝備本發明之基板處理裝置之第1實施形態之基板處理系統之概略構成之俯視圖。 圖2係顯示本發明之基板處理裝置之第1實施形態之概略構成之模式圖。 圖3係模式性顯示圖2所示之基板處理裝置之主要構成之分解組裝立體圖。 圖4係圖2之部分剖視圖。 圖5係顯示由升降機保持之複數塊基板與氣泡吐出口之配置關係之模式圖。 圖6係顯示第1實施形態之基板處理裝置之比較例之模式圖。 圖7係顯示本發明之基板處理裝置之第2實施形態所使用之氣泡供給部之構成之圖。 圖8(a)、(b)係顯示氣泡供給部之其他構成之圖。FIG. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with a substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic diagram showing the schematic configuration of the first embodiment of the substrate processing apparatus of the present invention. FIG. 3 is an exploded perspective view schematically showing the main components of the substrate processing apparatus shown in FIG. 2 . FIG. 4 is a partial sectional view of FIG. 2 . Fig. 5 is a schematic diagram showing the disposition relationship between a plurality of substrates held by an elevator and air bubble outlets. Fig. 6 is a schematic diagram showing a comparative example of the substrate processing apparatus of the first embodiment. Fig. 7 is a diagram showing the configuration of a bubble supply unit used in the second embodiment of the substrate processing apparatus of the present invention. 8(a), (b) are diagrams showing other configurations of the air bubble supply unit.
841:起泡器 841: Bubbler
842:氣泡配管 842: Bubble piping
843:突設部位 843: Protruding parts
845:氣泡吐出口 845:Bubble outlet
851:起泡器板 851: bubbler board
PT:間距 PT: Pitch
V:氣泡 V: Bubble
W:基板 W: Substrate
Claims (7)
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JP2019-236758 | 2019-12-26 | ||
JP2019236758 | 2019-12-26 | ||
JP2020-130002 | 2020-07-31 | ||
JP2020130002A JP7583546B2 (en) | 2019-12-26 | 2020-07-31 | Substrate Processing Equipment |
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TW202137371A TW202137371A (en) | 2021-10-01 |
TWI781496B true TWI781496B (en) | 2022-10-21 |
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TW109143907A TWI781496B (en) | 2019-12-26 | 2020-12-11 | Substrate processing apparatus |
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TW (1) | TWI781496B (en) |
WO (1) | WO2021131671A1 (en) |
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JP3196092B2 (en) * | 1992-12-11 | 2001-08-06 | イビデン株式会社 | Chemical plating tank |
JP3524540B2 (en) | 2001-04-12 | 2004-05-10 | 西山ステンレスケミカル株式会社 | Chemical processing method / chemical processing apparatus for glass substrate and glass substrate |
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JP5015717B2 (en) | 2007-10-15 | 2012-08-29 | 東京エレクトロン株式会社 | Substrate cleaning device |
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JP6707412B2 (en) * | 2016-07-22 | 2020-06-10 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method and storage medium |
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2020
- 2020-12-08 KR KR1020227020866A patent/KR102671541B1/en active IP Right Grant
- 2020-12-08 WO PCT/JP2020/045677 patent/WO2021131671A1/en active Application Filing
- 2020-12-11 TW TW109143907A patent/TWI781496B/en active
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JPH06154784A (en) * | 1992-11-25 | 1994-06-03 | Tomoegawa Paper Co Ltd | Manufacture of porous body for diffuser plate |
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CN114868233A (en) | 2022-08-05 |
TW202137371A (en) | 2021-10-01 |
KR102671541B1 (en) | 2024-05-31 |
WO2021131671A1 (en) | 2021-07-01 |
KR20220103163A (en) | 2022-07-21 |
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