TWI772430B - Plasma treatment device and gas shower head - Google Patents

Abstract

[Subject] The purpose is to improve the uniformity of the plasma process. [Solution] To provide a plasma processing apparatus for performing plasma processing on a substrate placed on a mounting table in a processing container, comprising: a metal window having a plurality of conductive partial window portions , and is formed in the above-mentioned processing container opposite to the above-mentioned mounting table: a partition member of an insulator, which is arranged between part of the window part, and between the above-mentioned part of the window part and the above-mentioned processing container; an antenna, which is provided on the upper side of the above-mentioned metal window, by inductive coupling to plasmatize the processing gas; and a cover member of an insulator covering the surface of the above-mentioned partition member on the side of the above-mentioned processing container and spanning the adjacent above-mentioned portion The edge portion of the window portion, the plurality of the partial window portions each has a plurality of first air holes, the cover member has a plurality of second air holes, and inside the cover member, at least one of the plurality of the first air holes and the plurality of the first air holes are provided. 2. The way that the air holes communicate with each other extends on the surface of the above-mentioned processing container.

Description

Plasma treatment device and gas shower head

The present invention relates to a plasma processing apparatus and a gas shower head.

There is known an inductively coupled type plasma processing apparatus for plasma processing a substrate to be processed on a stage placed in a processing container by plasmatizing a processing gas by inductive coupling. In such a plasma processing apparatus, there is proposed a gas shower head (for example, a gas shower head (eg , refer to Patent Document 1). [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2017-27775 [Patent Document 2] Japanese Patent Application No. 5582816 [Patent Document 3] Japanese Patent Application Laid-Open No. 2013-149377 [Patent Document 4] Japanese Patent Application No. 3599619 [Patent Document 3] Document 5] Japanese Patent Laid-Open No. 2015-22806 [Patent Document 6] Japanese Patent Laid-Open No. 2014-179311

[The problem to be solved by the invention]

In the case where the metal window is divided into a plurality of partial windows, an insulator is used to separate the partial windows, thereby electrically insulating the adjacent partial windows, so that the high-frequency current does not cross the adjacent partial windows. flow from time to time. In such a structure of the metal window, it is difficult to supply gas to the space in the processing container located below the part of the window because the air hole cannot be provided between the part of the window. As a result, a distribution occurs as a result of the plasma process such as a decrease in the etching rate under the part of the windows.

In this regard, it is conceivable to increase the flow rate of the gas supplied into the processing container to increase the etching rate between some of the windows. However, in this case, it is not possible to improve the uniformity of the plasma process such as etching where the etching rate is too high just below the part of the window.

In view of the above-mentioned problems, one aspect of the present invention is aimed at improving the uniformity of the plasma process. [means to solve the problem]

In order to solve the above-mentioned problems, in one aspect, there is provided a plasma processing apparatus for performing plasma processing on a substrate to be processed placed on a stage in a processing container, comprising: a metal A window, which has a plurality of conductive partial window portions, is formed in the above-mentioned processing container facing the above-mentioned mounting table: a partition member of an insulating material is provided between the partial window portions, and the above-mentioned partial window portions and Between the above-mentioned processing containers; an antenna provided on the upper side of the above-mentioned metal window to plasmatize the processing gas by inductive coupling; and an insulator cover member covering the above-mentioned processing container of the above-mentioned partition member. The surface of the side, and spans the edge portion of the adjacent partial window portions, the plurality of the partial window portions respectively have a plurality of first air holes, the cover member has a plurality of second air holes, and inside the cover member, a plurality of the above-mentioned first air holes are formed. 1. The form in which at least one of the air holes communicates with the plurality of second air holes extends on the surface on the side of the processing container. [Inventive effect]

From a viewpoint, the uniformity of the plasma process can be improved.

Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In addition, in this specification and the drawings, about the substantially same structure, the same code|symbol is attached|subjected, and the overlapping description is abbreviate|omitted.

(Overall Configuration of Plasma Processing Apparatus) First, the overall configuration of the plasma processing apparatus 1 according to one embodiment of the present invention will be described with reference to FIG. 1 . FIG. 1 shows the overall configuration of a plasma processing apparatus 1 according to an embodiment of the present invention. In the present embodiment, as an example of the plasma processing apparatus 1, an inductive coupling type plasma etching apparatus is mentioned.

However, the plasma processing apparatus 1 related to this embodiment is not limited to an etching apparatus, and may be an inductive coupling type film forming apparatus. The plasma processing apparatus 1 can be used to form a metal film when a thin film transistor is formed on a glass substrate (hereinafter, referred to as "substrate G") which is a substrate to be processed, that is, a rectangular substrate, for example, a glass substrate for FPD (Flat Panel Display). , ITO (Indium Tin Oxide) film, oxide film, etc. film formation treatment, or etching treatment of these films, photoresist film ashing treatment and other plasma treatment. Here, as an FPD, a liquid crystal display (LCD: Liquid Crystal Display), an electroluminescence (EL: Electro Luminescence) display, a plasma display panel (PDP: Plasma Display Panel), etc. are illustrated. In addition, the plasma processing apparatus 1 is not limited to the substrate G for FPD, The substrate G for solar cell panels can also be used for the above-mentioned various plasma processing.

The plasma processing apparatus 1 has a processing container 10 in the shape of a square tube made of a conductive material, for example, aluminum whose inner wall surface is anodized. The processing container 10 is electrically grounded. An opening is formed on the upper surface of the processing container 10 , and the opening is hermetically closed by the metal window 3 . The space surrounded by the processing container 10 and the metal window 3 is a plasma processing space U where plasma is generated.

A metal frame 11 is provided on the upper surface of the side wall of the processing container 10 . The top plate portion 61 is arranged on the upper side of the metal window 3 , and the top plate portion 61 is supported by the side wall portion 63 provided on the metal frame 11 . Between the processing container 10 and the metal frame 11, a sealing member 110 such as an O-ring is provided to keep the plasma processing space U airtight. The processing container 10 and the metal frame 11 constitute the processing container 10 of this embodiment. On the side wall of the plasma processing space U, there are provided a carry-in and carry-out port 101 for carrying in and out of the glass substrate G, and a gate valve 102 for closing the carry-in and carry-out port 101 .

The space surrounded by the metal window 3 , the side wall portion 63 and the top plate portion 61 becomes the antenna chamber 50 . Inside the antenna chamber 50 , the high-frequency antenna 5 is arranged so as to face a part of the window portion 30 . The high-frequency antenna 5 is arranged to be spaced apart from the part of the window portion 30 through a spacer made of, for example, an insulator not shown. The high-frequency antenna 5 is formed in a spiral shape so as to surround along the circumferential direction of the rectangular metal window 3 in the plane corresponding to each partial window portion 30 . In addition, the shape of the high-frequency antenna 5 is not limited to the vortex, and may be a loop antenna in which one or a plurality of antenna lines are looped. In addition, if the antenna wire is provided in the surface corresponding to the metal window 3 or each partial window portion 30 constituting the metal window 3 so as to surround along the circumferential direction, it does not matter what the structure of the high-frequency antenna 5 is.

As shown in FIG. 1 and FIG. 2 in which the metal window 3 is viewed from the plasma processing space U side, the metal frame 11 provided on the upper surface side of the side wall of the processing container 10 is a rectangular shape made of metal such as aluminum. framework.

The metal window 3 is divided into a plurality of window portions 30 . Each partial window portion 30 is formed of, for example, a non-magnetic and conductive metal, aluminum, or an alloy containing aluminum. Part of the window portion 30 is divided into various shapes and various numbers as required. The metal frame 11 and the partial windows 30 and the adjacent partial windows 30 are partitioned by the partition member 31 of the insulator according to the divided shape of the partial windows 30 .

Parts of the windows 30 divided from each other are electrically insulated from the metal frame 11 or the processing container 10 on the lower side thereof by the insulating member 31 , and the adjacent partial windows 30 are electrically insulated from each other by the partition member 31 .

The partition member 31 is formed by, for example, Teflon (registered trademark) or an insulating material made of resin. The high-frequency current supplied to the high-frequency antenna 5 flows through the surfaces of the plurality of windows 30, and an induced electric field is generated by the current flowing on the surface of the processing container 10 side. The underside of window 3 is deviated.

In this embodiment, the plurality of windows 30 insulated by the partition member 31 are electrically separated from each other. Therefore, in the plasma processing apparatus 1 according to the present embodiment, an induced electric field is generated in each of the partial window portions 30 . Accordingly, by controlling the induced electric field generated in the plurality of windows 30 by the size or arrangement of each partial window 30, the induced electric field generated on the surface of the metal window 3 on the processing container 10 side can be controlled, and the etching rate can be improved. distributed.

The surface of the partition member 31 on the processing container 10 side is covered by the cover member 32 of the insulator. In order to protect the partition member 31 from being affected by the plasma, the cover member 32 preferably covers all surfaces of the partition member 31 on the plasma processing space U side. However, when the entire surface of the partition member 31 on the plasma processing space U side is covered by the cover member 32, the area of a part of the window portion 30 exposed on the processing space U side becomes small. Since the plasma is generated in the vicinity of the portion exposed on the processing space U side of the partial window portion 30, the intensity of the plasma becomes weaker when the area of the partial window portion 30 becomes smaller. Furthermore, the induced electric field is weakened by the protrusion of the ceramic of the cover member 32 . Accordingly, it is preferable that the cover member 32 covers the smallest area on the side of the plasma processing space U of the partition member 31 .

Furthermore, as shown in FIG. 1 , a temperature regulation flow path 307 is formed in each partial window portion 30 . Part of the window portion 30 is adjusted to a predetermined temperature by allowing a cooling medium or a heating medium to flow through the temperature adjustment channel 307 .

The cover member 32 related to this embodiment is divided into plural numbers, and is arranged to cover a part of the partition member 31 . For example, each cover member 32 is formed of a ceramic member such as alumina formed into an elongated flat plate shape. According to this, the area of the processing container 10 side of the metal window 3 to be covered by the plurality of cover members 32 can be appropriately specified. In this embodiment, the cover member 32 covers the diagonal line of the metal window 3 and the partition member 31 in the center. However, the size or arrangement of the plurality of cover members 32 covering the partition member 31 is not limited to this, and various patterns may be employed according to the number of divisions of the partial window portion 30 or the shape of the partial window portion 30 . The size of the cover member 32 may be further divided, or the number of the cover member 32 may be changed. The cover member 32 may be arranged to cover a part or the whole of any part of the partition member 31 in consideration of the strength of the plasma.

In the plasma processing apparatus 1 , a fluororesin such as PTFE (Polytetrafluoroethylene) is used as the partition member 31 . For example, the PTFE-based volume resistivity is >10 ¹⁸ [Ω·cm (23° C.)], and the density is about 2.1 to 2.2 [g/cm ³ ]. Instead of using such a resin-made partition member 31, for example, alumina (volume resistivity>10 ¹⁴ or so [Ω･cm (23°C)] or so, density 3.9 or so [g/cm ³ ]) is used as a partition member. In the case of the material of the partition member 31 , it is possible to achieve both high insulating performance and light weight of the metal window 3 including the partition member 31 .

As shown in FIGS. 1 and 2 , a plurality of air holes 302 opening on the plasma processing space U side are formed in each of the plurality of window portions 30 . Although only a part of the air holes 302 is shown in FIG. 2 , many air holes 302 are formed in all of the partial windows 30 . In addition, a plurality of air holes 402 opened on the plasma processing space U side are formed in each of the plurality of cover members 32 . Accordingly, the plurality of window portions 30 and the plurality of cover members 32 thus constituted function as a gas shower head for supplying the process gas.

In order to improve the plasma resistance of the partial windows 30 , the surfaces of the partial windows 30 on the side of the processing container 10 are coated with plasma resistance. Specific examples of the plasma-resistant coating include anodizing treatment and ceramic spraying treatment.

Returning to FIG. 1 , on the side facing the metal window 3 of the plasma processing space U, a mounting table 13 for mounting the substrate G is provided. The stage 13 is made of a conductive material such as aluminum whose surface is anodized. The board|substrate G mounted on the mounting table 13 may be adsorbed and held by the electrostatic chuck. The stage 13 is provided on the bottom surface of the processing container 10 via the insulator frame 14 .

A second high-frequency power supply 152 is connected to the mounting table 13 via the matching portion 151 . The second high-frequency power supply 152 applies a high-frequency power for biasing, for example, a high-frequency power with a frequency of 3.2 MHz, to the stage 13 . The ions in the plasma can be introduced to the substrate G by the high-frequency power for biasing. In addition, in the stage 13, in order to control the temperature of the substrate G, a temperature adjustment mechanism such as a condenser functioning as a heating means or a cooling means, and a mechanism for supplying a heat transfer gas to the back surface of the substrate G may be provided.

An exhaust port 103 is formed on the bottom surface of the processing container 10 , and an exhaust device 12 such as a turbomolecular pump or a dry pump is connected to the exhaust port 103 . The inside of the plasma processing space U is evacuated by the exhaust device 12 to the pressure during plasma processing.

A first high-frequency power supply 512 is connected to each high-frequency antenna 5 via a matching portion 511 . Each high-frequency antenna 5 is supplied with, for example, high-frequency power of 13.56 MHz from the first high-frequency power supply 512 . Accordingly, during the plasma treatment, eddy currents are excited on each surface of the partial window portion 30, and an induced electric field is formed inside the plasma treatment space U by the eddy currents. The processing gas is supplied to the plasma processing space U from the plurality of air holes 302 and the plurality of air holes 402 provided in the metal window 3 , and is plasmaized in the plasma processing space U by an induced electric field.

As shown in FIG. 1 , the gas diffusion chambers 301 formed in the respective partial windows 30 are connected to a gas supply source 42 via a gas supply pipe 41 . The process gas required for the film formation process, etching process, ashing process, etc. described above is supplied from the gas supply source 42 . The processing gas supplied from the gas supply source 42 passes through the gas diffusion chamber 301 from the gas supply pipe 41, and is supplied to the plasma processing in a shower-like manner from the plurality of pores 302, 402 formed on the ceiling surface side of the plasma processing space U in space U. 1 shows a state where the gas supply source 42 is connected to one of the partial windows 30 , for convenience of illustration, the gas diffusion chambers 301 of each partial window 30 are actually connected to the gas supply source 42 .

A control unit 8 is provided in the plasma processing apparatus 1 . The control unit 8 is composed of a computer having a CPU (Central Processing Unit) and a memory, and a recipe (program) is recorded in the memory, and the recipe is used to execute the vacuum evacuation in the plasma processing space U where the substrate G is arranged. The operation of processing the substrate G by plasmaizing the processing gas using the high-frequency antenna 5 . Even if the recipe is stored in a memory medium such as a hard disk, CD, optical magnetic disk, memory card, etc., it can be installed in the memory.

In the plasma processing apparatus 1 having the configuration described above, the partial windows 30 are partitioned by the insulating partition members 31 , and the current flowing through the partial windows 30 does not flow to the adjacent partial windows 30 . or the processing vessel 10 side. In such a structure, when the amount of gas supplied to the lower part between the adjacent partial windows 30 is small, the generated plasma becomes weaker between the adjacent partial windows 30 and the distribution of the etching rate and the like is not improved. .

Therefore, the gas shower head arranged in the metal window 3 of the plasma processing apparatus 1 according to the present embodiment is provided with a large number of air holes 402 in the cover member 32 , so that the gas shower head can also be used between adjacent partial windows 30 . The processing gas is supplied below. Hereinafter, with respect to the details of the structure of the gas shower head of the metal window 3 according to the first and second embodiments, referring to FIGS. 3 to 5 while comparing the gas shower head of the metal window 3 according to the comparative example be explained.

(Gas Shower Head for Metal Window) The top view of Fig. 3(a) shows an example of a cross section of the cover member 2 according to the comparative example on the surface of the gas shower head attached to the metal window 3 on the side of the processing container 10. The bottom view of FIG. 3( a ) shows the upper left 1/4 plane of the top plate surface of the processing container 10 . The cross section of the top view of FIG. 3(a) is the A-A section of the bottom view of FIG. 3(a). In the lower figure of FIG. 3( a ), the air hole 302 is omitted.

The top view of FIG.3(b) shows an example of the cross section when the cover member 32 concerning 1st Embodiment is attached to the surface of the processing container 10 side of the gas shower head of the metal window 3. FIG. The bottom view of FIG. 3( b ) shows the upper left 1/4 plane of the top plate surface of the processing container 10 . The cross section of the top view of FIG. 3(b) is the B-B section of the bottom view of FIG. 3(b).

(Lid member related to the comparative example) The cover member 2 of the comparative example shown in FIG. 3(a) mounted on the surface of the processing container 10 side of the gas shower head of the metal window 3 is a plate-shaped member, and is provided to cover the The surface of the partition member 31 of the insulating material of the adjoining part of the window portion 30 on the side of the processing container 10 . In such a configuration, the process gas system is diffused in the gas diffusion chamber 301 in the partial window portion 30, and is supplied from the air hole 302 to below the partial window portion 30 in the process container. In such a configuration, since the processing gas is not supplied below the cover member 2 attached between the partial windows 30 , the etching rate is lowered below the cover member 2 .

(The cover member related to the first embodiment) On the other hand, the cover member 32 related to the first embodiment is attached to the surface of the processing space 10 side between the partial windows 30 shown in FIG. , the partition member 31 is covered, and the partition member 31 is protected from the influence of the plasma, and is disposed across the edge portion of the adjoining part of the window portion 30 .

Inside the cover member 32 , on both sides of the partition member 31 , two gas diffusion chambers 401 are provided in parallel along the longitudinal direction of the partition member 31 . A plurality of air holes 402 communicating with the gas diffusion chamber 401 are formed on the cover member 32 at a position below part of the window portion 30 . In the present embodiment, the cover member 32 extends on the surface of the processing container 10 in such a manner that at least any one of the plurality of air holes 302 communicates with the plurality of air holes 402 . Accordingly, in the gas diffusion chamber 401 , the processing gas is supplied from at least one of the plurality of pores 302 .

As shown in FIG. 4( a ), as a plan view of the cover member 32 related to the first embodiment, among the plurality of air holes 302 , the air holes 302 formed at the edge portion (the outermost side or its vicinity) of each partial window portion 30 are The cover member 32 covers. The cover member 32 is formed with a plurality of air holes 402 communicating with the gas diffusion chamber 401 in the vicinity of the lower part of the partition member 31 and between the plurality of air holes 302 . In the present embodiment, a gas supply path R2 for supplying a process gas from a plurality of air holes 402 provided in the cover member 32 is provided.

In the gas supply path R2 , the gas diffusion chamber 401 is supplied with a process gas from the air holes 302 formed in the edge portions of the respective partial window portions 30 . In the gas supply path R2 , the process gas system is supplied from the gas diffusion chamber 301 to the gas diffusion chamber 401 via the air holes 302 , and is introduced from the plurality of air holes 402 to the lower part between the partial windows 30 in the process container 10 in a shower-like manner. . Furthermore, in the gas supply path R1 , the processing gas is introduced into the processing chamber 10 below the partial windows 30 in a shower-like manner from the plurality of air holes 302 formed in the partial windows 30 . In this way, the processing gas can be introduced into the processing container 10 in a shower-like manner from the plurality of air holes 302 and 402 formed in the partial window portion 30 .

Fig. 4(b) shows a modification of the first embodiment. The gas supply path R2 may be provided at each of the air holes 302, but in this case, as shown in the modification example of FIG. 4(b), a plurality of diffusion chambers 401 are required.

As described above, in this embodiment, in addition to the gas supply path R1, the gas supply path R2 is also formed. Accordingly, in this embodiment, the gas supply path R1 can be used to supply the processing gas from the plurality of air holes 302 formed in the partial window portion 30 to the lower portion of the partial window portion 30 in a shower-like manner. In addition to this, the process gas may be supplied in a shower-like manner from the plurality of air holes 402 formed in the cover member 32 to below between some of the windows 30 using the gas supply path R2.

With this configuration, the shower plate of the metal window 3 according to the present embodiment can widen the range in which the gas is supplied from below the metal window 3 by expanding the gas ejection port between some of the windows 30 . . In this way, the processing gas can be blown out of the lower surface of the metal window 3 without any joints. As a result, the distribution of the etching rate or the film-forming rate can be well controlled. In this way, according to this embodiment, the distribution of etching rate and the like can be improved.

Furthermore, in the shower plate of the metal window 3 related to the present embodiment, the size or number of the cover member 32 is optimized according to the shape and number of the partial window portion 30 . A plurality of cover members 32 are arranged at optimum positions between the window portions 30 and part of the window portion 30 and the processing container 10 . In this way, the processing gas can be uniformly supplied from the plurality of air holes 402 formed in the plurality of cover members 32 provided at the optimum positions and the plurality of air holes 302 formed in the partial window portions 30 .

Furthermore, without changing the structure of the plasma processing apparatus 1, only the cover member 32 is arranged so as to span between the edge portions of the adjacent partial windows 30, so that the plasma process characteristics such as etching rate can be improved. Therefore, the shower plate of the metal window 3 according to the present embodiment can be easily applied to the existing plasma processing apparatus 1, and the etching rate and the like can be improved at low cost.

In addition, the air hole 302 is an example of a first air hole formed in each of the plurality of windows 30 , and the air hole 402 is an example of a second air hole formed in the cover member 32 .

(Lid member related to the second embodiment) As shown in L of FIG. 3(b), in the metal window 3 related to the first embodiment, there is a cover member 32 on the outer peripheral side where the gas flows from the lid The case where the gap between the part L where the member 32 is in contact with the part of the window part 30 leaks. That is, in the portion L in contact with the partial window portion 30, the gap management cannot be performed, and the gas leakage amount cannot be controlled due to the mechanical difference between the plasma processing apparatuses 1, so there is a possibility of a variation in the gas supply amount. the cause of the situation.

Then, as shown in FIG. 3( c ), an example is shown when the cover member 32 related to the second embodiment is attached to the surface of the processing container 10 side of the gas shower head of the metal window 3 , as no occurrence of Construction of gas leaks. The bottom view of FIG. 3( c ) shows the upper left 1/4 plane of the top plate surface of the processing container 10 . The cross section of the top view of FIG. 3( c ) is the C-C section of the bottom view of FIG. 3( c ).

The cover member 32 related to the second embodiment has a first cover member 32a on one side of the adjacent partial window portions 30 partitioned by the partition member 31, and a first cover member 32a provided on the other side of the partial window portions 30. 2. Cover member 32b. The first cover member 32a and the second cover member 32b are formed in a ceramic bag shape.

Specifically, the cover member 32 has a plate-shaped ceramic member 34 attached to the surface of the partition member 31 on the processing container 10 side in order to protect the partition member 31 from the influence of plasma, and is arranged adjacent to the ceramic member 34 . The first cover member 32a and the second cover member 32b.

The 1st cover member 32a and the 2nd cover member 32b have the structure which pinches the ceramic member 34, and has a hollow part inside. The first cover member 32a and the second cover member 32b are provided in parallel along the longitudinal direction of the partition member 31, and are separated from each other, and a groove portion 35 is formed therebetween (see FIG. 5(a) ). The ceramic member 34 is exposed from the groove portion 35 .

The hollow portions of the first cover member 32 a and the second cover member 32 b serve as the gas diffusion chamber 403 . A plurality of air holes 404 communicating with the gas diffusion chamber 403 are formed at positions below between the partial window portions 30 of the first cover member 32a and the second cover member 32b.

In addition, in this embodiment, the tubular member 32a1 formed in the 1st cover member 32a is inserted in the air hole 302b formed in the edge part vicinity of the partial window part 30. Moreover, the tubular member 32b1 formed in the 2nd cover member 32b is inserted in the other air hole 302b formed in the edge part vicinity of the partial window part 30. The first cover member 32a and the second cover member 32b inserted into the tubular member 32a1 and the tubular member 32b1 and the partial window portion 30 are sealed by the O-ring 304 . In this way, gas does not leak from the gaps between the first cover member 32a and the second cover member 32b and the partial window portion 30 . Since the air hole 302b is inserted into the tubular member 32a1 of the first cover member 32a and the tubular member 32b1 of the second cover member 32b, the diameter is larger than that of the other air holes 302a formed in the partial window portion 30.

The first cover member 32a and the second cover member 32b extend on the surface of the processing container 10 so as to communicate with one or a plurality of air holes 302b. Accordingly, the gas diffusion chambers 403 in the first cover member 32a and the second cover member 32b are supplied with the processing gas from one or a plurality of air holes 302b.

With the first cover member 32a and the second cover member 32b according to the second embodiment thus constructed, the gas supply path R1 is used, and the processing gas is supplied into the processing container 10 in a shower-like manner from the plurality of air holes 302a part of the window portion 30 below. In addition, using the gas supply path R2 , the process gas is supplied in a shower-like manner from the plurality of air holes 404 a to the lower part between the partial windows 30 in the process container 10 .

The gas supply path R2 according to the present embodiment has a first route through which the process gas leads to the inside of the first cover member 32a, and a second route through which the process gas leads to the inside of the second cover member 32b. According to this, in addition to the gas supply path R1 for directly supplying the process gas from the plurality of air holes 302a formed in the partial window portion 30 to the processing container 10, the gas supply path R2 having the first line and the second line can be used, The entire surface of the metal window 3 is supplied into the processing container 10 in a shower-like manner.

The air holes 302a and 302b are examples of the first air holes formed in each of the plurality of windows 30, and the air hole 404 is an example of the second air holes formed in the first cover member 32a and the second cover member 32b. The O-ring 304 is provided on the first cover member 32a and the second cover member 32b, and is an example of a sealing member that seals between the tubular members 32a1 and 32b1 inserted into the air hole 302b and the partial window portion 30, respectively.

The adjoining part of the window portion 30 is formed by metal. Therefore, in the plasma treatment, the adjacent partial windows 30 are thermally expanded respectively by heat input from the plasma or heat transfer from the partial windows 30 . Then, when the inside of the processing chamber 10 is evacuated by the exhaust device 12 to be in a specific vacuum state, a large amount of pressure is applied from the atmosphere side (the antenna chamber 50 side) of the metal window 3 to the vacuum side (the processing chamber 10 side). The pressure causes the metal window 3 to deform toward the processing container 10 side. Therefore, when the first cover member 32a and the second cover member 32b mounted over the edge portion of the adjacent partial window portion 30 are integrated, the cover member may be broken or damaged due to different actions of the adjacent partial window portion 30 .

In this regard, in this embodiment, since the first cover member 32a and the second cover member 32b are provided separately from each of the adjacent partial window portions 30, each cover member can follow the adjacent partial window portions 30. different actions. According to this, it is possible to prevent the first cover member 32a and the second cover member 32b from being damaged by thermal expansion or deformation of each partial window portion 30 . However, the first cover member 32a and the second cover member 32b may be provided integrally.

When the inside of the processing container 10 is evacuated by the exhaust device 12 during plasma processing to be in a specific vacuum state, from the atmosphere side (the antenna chamber 50 side) of the metal window 3 to the vacuum side (the processing container 10 side) When a large pressure is applied, the metal window 3 is bent toward the processing container 10 side. Therefore, in the case where the gas diffusion chamber is formed by contacting the metal window 3 and the cover member, when the size of the gap between the contact surfaces is increased due to the bending of the metal window 3 or the heat input from the plasma, the gas in the gas diffusion chamber increases. may leak from its clearance.

On the other hand, when the gas shower head of the metal window 3 according to the present embodiment is used, the inside of the first cover member 32a and the second cover member 32b has a hollow structure, so that the process gas does not leak from the air hole 404 Since it can be supplied in the form of a shower, the controllability of the process gas can be improved.

Fig. 5(a) is a plan view of the first cover member 32a and the second cover member 32b of Fig. 3(c). At this time, using the gas supply path R1 , the processing gas is directly introduced into the processing vessel 10 below the partial window portion 30 from the plurality of air holes 302 a formed in the partial window portion 30 . Furthermore, using the gas supply path R2, the processing gas is introduced into a part of the window portion in the processing container 10 through the plurality of air holes 404 formed in the first cover member 32a and the second cover member 32b according to the second embodiment. below between 30. Accordingly, the etching rate and the like in the processing container 10 can be improved.

Fig. 5(b) shows the cover member 32 according to the modification of the second embodiment. In this way, in the cover member 32 according to the modification of the second embodiment, the air hole 302b is inserted into the first cover member 32a of the air hole 302b and the tubular members 32a1 and 32b1 of the second cover member 32b form gaps. Even according to this, while ensuring the conductivity of the gas supply path R2 , a sufficient flow rate of the process gas can be supplied between the partial windows 30 in a shower-like manner. Accordingly, the etching rate and the like in the processing container 10 can be improved.

As described above, in the case of using the cover members configured in this manner in the plasma processing apparatus 1 in relation to each embodiment, the treatment that can be supplied to the metal window 3 in a shower can be increased by 13% compared to the case where these cover members are not used. gas.

In the above, although the plasma processing apparatus and the gas shower head have been described by the above-mentioned embodiments, the plasma processing apparatus and the gas shower head related to the present invention are not limited to the above-mentioned embodiments, and can be within the scope of the present invention. Various deformations and improvements are made inside. The matters described in the above-mentioned plural embodiments can be combined within a range that does not contradict each other.

In this specification, the glass substrate G for FPD is mentioned as an example of a to-be-processed substrate, and it demonstrates. However, the substrate is not limited to this, and may be solar cells, various substrates used in LCD (Liquid Crystal Display), semiconductor wafers, photoresists, CD substrates, printed substrates, and the like.

1‧‧‧Plasma processing device 3‧‧‧Metal window 5‧‧‧High-frequency antenna 10‧‧‧Processing container 13‧‧‧Plating table 30‧‧‧Partial window 31‧‧‧Partition member 32‧‧ ‧Cover member 32a‧‧‧First cover member 32b‧‧Second cover member 32a1, 32b1‧‧‧Tubular member 34‧‧‧Ceramic member 35‧‧‧Groove 50‧‧‧Antenna chamber 152‧‧‧Second High-frequency power supply 301‧‧‧Gas diffusion chamber 302, 302a, 302b‧‧‧Air hole 304‧‧‧O-ring 401, 403‧‧‧Gas diffusion chamber 402, 404‧‧‧Air hole R1‧‧‧First gas supply Road R2‧‧‧Second gas supply line

FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an embodiment. Fig. 2 is a diagram showing an example of a top view of a metal window according to an embodiment. Fig. 3 is a cross-sectional view and a 1/4 plan view showing an example of a cover member according to an embodiment. Fig. 4 is a diagram showing an example of the air hole provided in the cover member related to the first embodiment. Fig. 5 is a diagram showing another example of the air hole provided in the cover member related to the second embodiment and its modification.

2‧‧‧Cover member

3‧‧‧Metal window

11‧‧‧Metal frame

30‧‧‧Part of the window

31‧‧‧Separation member

32‧‧‧Lid member

32a‧‧‧First cover member

32b‧‧‧Second cover member

32a1, 32b1‧‧‧Tubular components

34‧‧‧Ceramic components

35‧‧‧Goube

301‧‧‧Gas Diffusion Chamber

302, 302a, 302b‧‧‧pore

304‧‧‧O-ring

401, 403‧‧‧Gas diffusion chamber

402, 404‧‧‧pore

Claims (8)

A plasma processing apparatus for plasma processing a processing gas to perform plasma processing on a substrate to be processed placed on a stage in a processing container, the plasma processing apparatus is characterized in that it has a metal window, It has a plurality of conductive partial windows, and is formed in the processing container facing the mounting table: a partition member of an insulator is provided between the partial windows, and the partial windows and the above between the processing containers; an antenna, which is provided on the upper side of the metal window, and plasmaizes the processing gas by inductive coupling; and a cover member of an insulator, which covers the side of the processing container of the partition member The surface of the adjacent part of the window part and the edge part of the adjacent part of the window part, a plurality of the part of the window part respectively has a plurality of first air holes, the cover member has a plurality of second air holes, and in the inside of the cover member, a plurality of the first air holes At least one of the air holes is communicated with the plurality of second air holes, extending on the surface on the side of the processing container, and inside the cover member, a gas diffusion for supplying the processing gas from at least any one of the plurality of the first air holes is formed. room. The plasma processing apparatus according to claim 1, wherein the metal window has: a first gas supply path for supplying a process gas from a plurality of the first air holes into the processing container; and a second gas supply path for The process gas is passed from at least any one of the plurality of above-mentioned first pores The gas is supplied into the processing container through the plurality of second air holes through the gas diffusion chamber. The plasma processing apparatus according to claim 2, wherein the second gas supply passage supplies the processing gas from the plurality of second air holes arranged below between the adjacent partial window portions. The plasma processing apparatus according to any one of claims 1 to 3, wherein the gas diffusion chambers are provided in two of the cover members along the longitudinal direction of the partition members covered by the cover member. a space. The plasma processing apparatus according to any one of claims 1 to 3, wherein the gas diffusion chamber is located at each of the first air holes along the longitudinal direction of the partition member covered by the cover member. , set multiple. The plasma processing apparatus according to any one of claims 1 to 3, wherein the cover member has a first cover member provided between adjacent partial window portions partitioned by the partition member One edge portion; and a second cover member provided on the other edge portion of the partial window portion; the first cover member and the second cover member are formed in a ceramic bag shape. The plasma processing apparatus according to claim 6, wherein the first cover member and the second cover member each have a tubular member inserted into at least one of the plurality of first air holes, and each of the tubular member and the A sealing member is provided between some of the windows. A gas shower head, which is used in a plasma processing apparatus for plasma processing a substrate to be processed placed on a stage in a processing container by plasmaizing a processing gas by inductive coupling, the gas The shower head is characterized by comprising: a metal window having a plurality of conductive partial windows; a partition member of an insulating material, which is provided between the partial windows and between the partial windows and the processing container. an antenna, which is arranged on the upper side of the above-mentioned metal window, and plasmaizes the processing gas by inductive coupling; and an insulator cover member, which covers the surface of the above-mentioned partition member on the side of the above-mentioned processing container, And across the edge portion of the adjacent partial window portions, a plurality of the partial window portions respectively have a plurality of first air holes, the cover member has a plurality of second air holes, and inside the cover member, the plurality of the first air holes are At least any one of the plurality of second air holes communicates with the surface of the processing container, and a gas diffusion chamber for supplying processing gas from at least one of the plurality of first air holes is formed in the inside of the cover member.

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