TWI768786B - Wafer carrier capable of accurately adjusting temperature and thin film deposition device using the same - Google Patents

Abstract

The invention is a wafer carrier capable of accurately adjusting temperature, which mainly includes a carrying unit, a heating unit, a cooling unit, a heat conducting plate, a temperature sensing unit and a control unit. The heating unit includes a first and a second heating coil, and the cooling unit and the heating unit are stacked. The heat conduction plate is located between the cooling unit and the heating unit, and includes at least one protrusion or at least one perforation or at least one depression, so that there is at least one isolation space between the heating unit and the cooling unit disposed on both sides of the heat conduction plate. The control unit adjusts the flow rate of the cooling fluid conveyed by the cooling unit and the heating efficiency of the first and second heating coils according to the temperature sensed by the temperature sensing unit, so that the carrying unit generates a uniform and accurate temperature.

Description

A carrier plate capable of accurately adjusting temperature and a thin film deposition device using the same

The present invention relates to a carrier plate that can accurately adjust the temperature, especially a thin film deposition device using the carrier plate, which can adjust the temperature of each area of the carrier plate according to the measured temperature, so that the carrier plate can produce uniform and accurate temperature.

Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment, and are commonly used in processes such as integrated circuits, light emitting diodes, and displays.

The deposition equipment mainly includes a cavity and a carrier plate, wherein the carrier plate is located in the cavity and used to carry at least one wafer. Taking physical vapor deposition as an example, a target needs to be set in the cavity, wherein the target faces the wafer on the carrier plate. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the chamber, and bias voltages are respectively applied to the target material and the carrier plate, wherein the carrier plate also heats the supported wafer. The inert gas in the cavity will form an ionized inert gas due to the action of the high-voltage electric field. The ionized noble gas is attracted by the bias on the target and bombards the target. Target atoms or molecules sputtered from the target are attracted by a bias on the carrier plate and deposit on the surface of the heated wafer to form a thin film on the surface of the wafer.

Specifically, the stability of the bias voltage and temperature generated by the carrier plate will have a considerable impact on the film deposition quality on the wafer surface. Therefore, how to make the carrier plate generate stable temperature and bias voltage is an important factor in the film deposition process. one of the topics.

As mentioned in the prior art, during the deposition process, it is usually necessary to heat the carrier plate to deposit a thin film on the surface of the wafer and improve the uniformity of the thin film deposited on the surface of the wafer. To this end, the present invention proposes a novel carrier plate, which mainly adjusts the temperature of different regions of the carrier plate according to the temperature of the carrier plate measured by the temperature sensing unit, so that the carrier plate can reach the preset temperature quickly and accurately, so as to improve the wafer quality. The uniformity of the film formed on the surface.

An object of the present invention is to provide a carrier plate capable of accurately adjusting temperature, which mainly includes at least one heating unit, at least one cooling unit, a heat conducting plate and at least one temperature sensing unit. The heating unit, the heat conducting plate and the cooling unit are arranged in a stacked manner, wherein the heat conducting plate is located between the heating unit and the cooling unit. The heating unit is closer to the wafers carried on the carrier tray and used to increase the temperature of the wafers, and the cooling unit is farther from the wafers carried by the carrier tray and used to reduce the temperature of the wafers.

In addition, the heat conducting plate includes at least one protruding portion and/or at least one perforating portion and/or at least one concave portion, so that when the cooling unit is connected to the heating unit through the heat conducting plate, at least one isolation space is formed between the cooling unit and the heating unit, In order to reduce the contact area between the heat conduction plate and the heating unit and cooling unit. The arrangement of the heat conducting plate can prevent the cooling unit from absorbing too much heat from the heating unit, so that the heating unit cannot effectively increase the temperature of the carrier plate and the wafer.

An object of the present invention is to provide a carrier plate capable of accurately adjusting temperature, which mainly includes at least one heating unit, at least one cooling unit and at least one temperature sensing unit, wherein the cooling unit The unit includes a first cooling line. The heating unit includes two heating coils, which are respectively arranged in the radially inner region and the radially outer region of the carrier plate.

A control unit is electrically connected to the temperature sensing unit, and according to the temperature measured by the temperature sensing unit and a preset temperature, respectively adjusts the flow rate and/or temperature of the cooling fluid delivered by the first cooling line, and adjusts the input of the two heating The magnitude of the power signal of the coil enables the carrier plate to reach the preset temperature quickly and accurately.

An object of the present invention is to provide a carrier plate capable of accurately adjusting temperature, wherein the first cooling line is respectively connected to a first input line and a first output line, and transmits a first cooling fluid through the first input line to a the first cooling line, and then output the first cooling fluid out of the first cooling line via the first output line.

In addition, a cooling jacket is sleeved on the first output pipeline, wherein the cooling jacket is connected to the second input pipeline and the second output pipeline. The second input line delivers a second cooling fluid to the cooling jacket, and outputs the second cooling fluid to the cooling jacket through the second output line, so as to reduce the temperature of the first cooling fluid in the first output line, so as to connect the second cooling fluid to the cooling jacket. The flow detector of an output line will not be damaged by the overheating of the first cooling fluid.

In order to achieve the above-mentioned purpose, the present invention provides a carrier plate capable of accurately adjusting temperature, comprising: a carrier unit including a carrier surface for carrying at least one wafer; at least one heating unit including at least a first heating coil and at least one A second heating coil, wherein the first heating coil is arranged in a radially outer region of the carrier plate, and the second heating coil is arranged in a radially inner region of the carrier plate, and the first heating coil and the second heating coil The coils are independently heated; at least one cooling unit includes at least one first cooling pipeline for conveying a first cooling fluid, wherein the heating unit and the cooling unit are stacked, and the heating unit is closer to the bearing surface of the bearing unit than the cooling unit; a The heat-conducting plate is located between the cooling unit and the heating unit, and includes at least one convex part or at least one perforated part or at least one concave part, so that there is at least one isolation space between the heating unit and the cooling unit arranged on both sides of the heat-conducting plate ; at least one temperature sensing unit, disposed on the carrying unit, and used to measure the temperature of the carrying unit; and a control unit, electrically connected to the temperature sensing unit, and according to the temperature measured by the temperature sensing unit, adjust the delivery to the first The flow of the first cooling fluid of a cooling line.

The present invention provides a thin film deposition device, comprising: a cavity, including an accommodating space; a carrying tray, located in the accommodating space, comprising: a carrying unit including a carrying surface for carrying at least one wafer; at least one The heating unit includes at least one first heating coil and at least one second heating coil, wherein the first heating coil is arranged in a radially outer region of the carrier plate, and the second heating coil is arranged in a radially adjacent region of the carrier plate. The inner area, and the first heating coil and the second heating coil are independently heated; at least one cooling unit includes at least one first cooling pipeline for conveying a first cooling fluid, wherein the heating unit and the cooling unit are stacked and arranged, and the heating unit A bearing surface that is closer to the bearing unit than the cooling unit; a heat-conducting plate is located between the cooling unit and the heating unit, and includes at least one convex part or at least one perforated part or at least one concave part or at least one concave part, so that the heat conducting plate is arranged in the heat conducting part. There is at least one isolation space between the heating unit and the cooling unit on both sides of the plate; at least one temperature sensing unit is arranged on the carrying unit and used to measure the temperature of the carrying unit; and a control unit is electrically connected to the temperature sensing unit , and adjust the flow rate of the first cooling fluid delivered to the first cooling pipeline according to the temperature measured by the temperature sensing unit; and at least one air inlet, fluidly connected to the accommodating space of the cavity, and used to deliver a process gas to the accommodation space.

In the carrier plate and the film deposition device, the cooling unit includes at least one second cooling line for conveying a second cooling fluid, and the first cooling line is arranged around the outside of the second cooling line.

The carrier plate and the film deposition device include a first input line, a first output line and a first flow control valve, the first input line and the first output line are connected to the first cooling line, and the first flow control valve The first input line is fluidly connected, and the control unit controls the first flow control valve according to the temperature measured by the temperature sensing unit, so as to adjust the flow rate of the first cooling fluid sent from the first input line to the first cooling line.

The carrier plate and the film deposition device include: a first input line connected to the first cooling line; a first output line connected to the first cooling line, wherein the first input line inputs the first cooling fluid into the first cooling line pipeline, and the first cooling fluid is outputted from the first cooling pipeline through the first output pipeline; a cooling jacket is arranged on the first output pipeline and contacts the first output pipeline; a second input pipeline is connected to the cooling jacket; a The second output line is connected to the cooling jacket, wherein the second input line delivers a second cooling fluid to the cooling jacket, and the second cooling fluid is output from the cooling jacket through the second output line to reduce the first cooling fluid through the cooling jacket The temperature of the first cooling fluid output by the output line.

In the carrier plate and the thin film deposition device, the control unit adjusts the magnitude of a power signal input to the first heating coil and the second heating coil respectively according to the temperature sensed by the temperature sensing unit.

The thin film deposition device includes a support member connected to and driving the displacement of the carrier plate, and the first input pipeline, the first output pipeline, the cooling jacket, the second input pipeline and the second output pipeline are located in the support member.

10: Carrier plate

101: Radial outer area

103: Radial inner area

11: Bearing unit

110: Setup Space

111: Bearing surface

115: Chassis

12: Wafer

13: Heating unit

131: First heating coil

133: Second heating coil

14: Thermal plate

141: Raised part

142: Isolation Space

143: perforated part

15: Cooling unit

151: First cooling line

1511: First input line

1513: First output pipeline

153: Second cooling line

161: First flow control valve

17: Temperature sensing unit

171: The first temperature sensing unit

173: Second temperature sensing unit

18: Heat transfer gas pipeline

19: Control unit

20: Thin film deposition apparatus

21: Cavity

211: Air intake

212: inlet and outlet

213: Top Plate

215: Lower cavity

217: Insulation part

23: Supports

24: Palladium

25: Cover Ring

26: Accommodating space

27: Stopper

271: Ring Flange

28: Drive unit

30: Carrier plate

35: Cooling unit

351: First cooling line

3511: First input line

3513: First output line

3515: Flow Detector

353: Cooling jacket

3531: Second input line

3533: Second output line

1 is a schematic cross-sectional view of an embodiment of a carrier plate capable of accurately adjusting the temperature of the present invention.

FIG. 2 is a schematic exploded cross-sectional view of an embodiment of a carrier plate capable of accurately adjusting the temperature of the present invention.

FIG. 3 is a top perspective view of an embodiment of a carrier plate capable of accurately adjusting the temperature of the present invention.

FIG. 4 is a top view of an embodiment of the heat-conducting plate that can accurately adjust the temperature of the heat-conducting plate of the present invention.

5 is a schematic cross-sectional view of another embodiment of the carrier plate capable of accurately adjusting the temperature of the present invention.

[ Fig. 6 ] is a top perspective view of another embodiment of the carrier plate capable of accurately adjusting the temperature of the present invention.

7 is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus using a carrier plate according to the present invention.

Please refer to FIG. 1 to FIG. 3 , which are a schematic cross-sectional view, an exploded cross-sectional schematic view, and a top perspective view of an embodiment of a carrier plate capable of accurately adjusting the temperature of the present invention, respectively. As shown in the figure, the carrier plate 10 is used for carrying at least one wafer 12 , and mainly includes a carrier unit 11 , at least one heating unit 13 , a heat conducting plate 14 , at least one cooling unit 15 , at least one temperature sensing unit 17 and a The control unit 19, wherein the carrying unit 11 includes a carrying surface 111 for carrying the wafer 12, for example, the carrying unit 11 may be a titanium disk. The heating unit 13 and the cooling unit 15 are stacked, and the heat conducting plate 14 is located between the heating unit 13 and the cooling unit 15 .

The heating unit 13 includes at least one first heating coil 131 and at least one second heating coil 133 , wherein the first heating coil 131 and the second heating coil 133 may be heating wires. In use, a current can be input into the first heating coil 131 and the second heating coil 133 respectively, and the carrier plate 10 and/or the carrier unit 11 can be heated by resistance heating through the first heating coil 131 and the second heating coil 133 . In another embodiment of the present invention, the first and second heating coils 131/133 may be induction coils.

The carrier plate 10 may be disc-shaped, wherein the first heating coil 131 is arranged in a radially outer region 101 of the carrier plate 10 , and the second heating coil 133 is arranged in a radially inner region 103 of the carrier plate 10 . The radially outer region 101 and the radially inner region 103 are not necessarily circular or annular in appearance.

In practical application, a first power signal can be sent to the first heating coil 131, and a second power signal can be sent to the second heating coil 133, wherein the first power signal and the second power signal can be independent signals, The heating efficiency of the first heating coil 131 and the second heating coil 133 can be adjusted respectively, so as to change the radially outer region 101 on the outer side (outer ring) and the radially inner region on the inner side (inner ring) of the carrier plate 10 . 103 temperature.

The first heating coil 131 and the second heating coil 133 may have a plurality of bent portions to increase the radially outer region 101 and the radially inner region 103 of the first heating coil 131 and the second heating coil 133 and the carrier plate 10 . contact area.

In practical applications, some of the first heating coils 131 may extend to the radially inner region 103 , and some of the second heating coils 133 may extend to the radially outer region 101 . Therefore, the right scope of the present invention is not limited to that the first heating coils 131 are all located in the radially outer region 101 , or the second heating coils 133 are all located in the radially inner region 103 .

In the embodiment of the present invention, the cooling unit 15 includes a first cooling line 151 and a second cooling line 153, wherein the first cooling line 151 is located in the radially outer region 101 of the carrier plate 10, and the second cooling line 153 is It is located in the radially inner region 103 of the carrier plate 10 . The first cooling line 151 and the second cooling line 153 are pipes, and are used for conveying cooling fluid, such as water. In practical application, the cooling unit 15 may only include the first cooling line 151 .

The first cooling line 151 and the second cooling line 153 can be separated by fluids, wherein the first cooling line 151 is used for conveying a first cooling fluid, and the second cooling line 153 is used for conveying a second cooling fluid, and can be respectively The flow rates of the input first cooling fluid and the second cooling fluid are controlled to adjust the cooling efficiency of the first cooling line 151 and the second cooling line 153 .

In the present invention, the heating unit 13 and the cooling unit 15 are mainly provided on the carrier plate 10 at the same time, so that the temperature of the carrier plate 10 can be adjusted at a relatively fast speed, whether it is heating or cooling. In addition, the heating unit 13 heats the temperature of different regions of the carrier plate 10 through the first and second heating coils 131/133, respectively, and the cooling unit 15 cools the temperature of different regions of the carrier plate 10 through the first and second cooling lines 151/153, respectively. , which can make the temperature of the carrier plate 10 more uniform and accurate.

The heat-conducting plate 14 is located between the cooling unit 15 and the heating unit 13 , wherein the cooling unit 15 can reduce the temperature of the heating unit 13 and/or the carrying unit 11 through heat conduction through the heat-conducting plate 14 . The thermally conductive plate 14 may be made of a material with high thermal conductivity, such as metal.

In practical applications, the cooling unit 15 often absorbs too much heat from the heating unit 13 and the carrier unit 11 through the heat conducting plate 14 , so that the heating unit 13 cannot effectively increase the temperature of the carrier unit 11 and the wafer 12 .

To this end, the present invention designs the heat conducting plate 14 to have at least one convex portion 141 and/or at least one perforated portion 143 and/or at least one concave portion, as shown in FIG. 4 , wherein the convex portion 141 and/or at least one The perforated portion 143 and/or at least one concave portion are provided on the surface of the heat conducting plate 14 in contact with the heating unit 13 and/or the cooling unit 15 . By arranging the raised portion 141 and/or the perforated portion 143 and/or at least one recessed portion on the heat-conducting plate 14, at least one isolation space 142 can be formed between the cooling unit 15 and the heating unit 13 disposed on both sides of the heat-conducting plate 14 , and reduce the contact area between the cooling unit 15 and the heat-conducting plate 14 , and reduce the contact area between the heat-conducting plate 14 and the heating unit 13 .

The use of the heat conducting plate 14 can reduce the excessive heat absorbed by the cooling unit 15 from the heating unit 13 and the carrier unit 11 via the heat conducting plate 14 , and help the heating unit 13 to increase the temperature of the carrier unit 11 and/or the wafer 12 . In practical applications, different numbers and/or areas of raised portions 141 and/or perforated portions 143 may be set on the heat-conducting plate 14 according to the requirements of the process temperature, so as to change the heat-conducting plate 14 and the cooling unit 15 and/or heating Contact area of cell 13.

The temperature sensing unit 17 is disposed in the carrier plate 10 and used to measure the temperature of the carrier plate 10 . Specifically, the temperature sensing unit 17 may be disposed on the carrier unit 11 and close to the carrier surface 111 of the carrier unit 11 to accurately measure the temperature of the wafer 12 .

The control unit 19 is electrically connected to the temperature sensing unit 17, and receives the temperature measured by the temperature sensing unit 17, wherein the control unit 19 may be a computer, a microprocessor, or the like. In addition, the control unit 19 can adjust the flow rate and/or temperature of the cooling fluid in the first cooling line 151 and/or the second cooling line 153 according to the temperature measured by the temperature sensing unit 17 to reduce the radially outer region 101 and the diameter to the temperature of the inner zone 103 .

In an embodiment of the present invention, the first cooling line 151 is fluidly connected to a first input line 1511 and a first output line 1513, wherein the first input line 1511 delivers the first cooling fluid to the first cooling line 151, and the first A cooling line 151 delivers the first cooling fluid to the first output line 1513 . The first input line 1511 can be fluidly connected to a first flow control valve 161 to control the The control unit 19 may be connected to and control the first flow control valve 161 and adjust the flow rate of the first cooling fluid delivered to the first cooling line 151 . Specifically, the control unit 19 can control the first flow control valve 161 according to the temperature measured by the temperature sensing unit 17 to adjust the flow rate of the first cooling fluid sent from the first input line 1511 to the first cooling line 151 . In addition, the control unit 19 can also adjust the flow rate of the second cooling fluid input into the second cooling line 153 through a similar structure and method, and can reduce the temperature of different regions on the carrier plate 10 respectively.

In addition, the control unit 19 can also adjust the magnitude of the power signal input to the first heating coil 131 and the second heating coil 133 according to the temperature measured by the temperature sensing unit 17 , so as to adjust the first heating coil 131 and the second heating coil 133 respectively. heating efficiency.

In practical application, a preset temperature can be input to the control unit 19, and the control unit 19 can adjust the cooling efficiency of the first cooling line 151 and the second cooling line 153 according to the preset temperature and the temperature measured by the temperature sensing unit 17 , and adjust the heating efficiency of the first heating coil 131 and the second heating coil 133 , so that the carrier plate 10 , the carrier unit 11 and the wafer 12 quickly reach the preset temperature.

In an embodiment of the present invention, the number of temperature sensing units 17 may be plural, for example, the number of temperature sensing units 17 may be two, wherein the first and second temperature sensing units 171/173 are respectively disposed on the carrier The radially outer region 101 and the radially inner region 103 of the disk 10 and/or the carrier unit 11 .

In an embodiment of the present invention, the appearance of the carrying unit 11 can be a cover body, and includes a setting space 110 . The heating unit 13 , the heat conducting plate 14 and/or the cooling unit 15 can be arranged in the setting space 110 of the bearing unit 11 , and the bearing unit 11 can be connected to a chassis 115 to cover the setting space 110 of the bearing unit 11 and connect the heating unit 13 , the heat-conducting plate 14 and/or the cooling unit 15 are limited in the setting space 110 between the carrying unit 11 and the chassis 115 .

In another embodiment of the present invention, the carrier plate 10 may be provided with a conductive portion below the heating unit 13 and the cooling unit 15 , wherein the conductive portion may be a disk-shaped conductor. The conductive portion can be connected to a bias power source, and a bias voltage is formed on the conductive portion through the bias power source, so as to attract the plasma above the wafer 12 . The bias power supply can be an AC power supply or a DC power supply, and is used to form an AC bias voltage or a DC bias voltage on the conductive portion. In different embodiments, an insulating and heat-conducting unit may also be disposed between the conductive portion and the heating unit 13 to electrically isolate the heating unit 13 and the conductive portion.

Please refer to FIG. 5 and FIG. 6 , which are a schematic cross-sectional view and a top perspective view of an embodiment of a carrier plate capable of accurately adjusting the temperature of the present invention, respectively. As shown in the figure, the carrier plate 30 is used to carry at least one wafer 12 , and mainly includes a carrier unit 11 , at least one heating unit 13 , a heat conduction plate 14 , at least one cooling unit 35 , at least one temperature sensing unit 17 and a The control unit 19, wherein the carrying unit 11 includes a carrying surface 111 for carrying the wafer 12, for example, the carrying unit 11 may be a titanium disk. The heating unit 13 and the cooling unit 35 are stacked and disposed, and the heat conducting plate 14 is located between the heating unit 13 and the cooling unit 35 , wherein the heating unit 13 is closer to the carrier surface 111 of the carrier unit 11 and the carrier wafer 12 than the cooling unit 35 .

In the embodiment of the present invention, the cooling unit 35 includes a first cooling line 351, wherein the first cooling line 351 is fluidly connected to a first input line 3511 and a first output line 3513, wherein the first input line 3511 connects the first cooling fluid to the first cooling line 351 , which in turn delivers the first cooling fluid to the first output line 3513 . The first cooling fluid sent to the first cooling line 351 absorbs the heat of the heating unit 13 and the carrying unit 11 through the heat conducting plate 14 , so that the temperature of the cooling fluid from the first output line 3513 is higher than that of the first input line 3511 .

Specifically, the first cooling line 351 in the embodiment of the present invention has a wider range and/or area distributed on the carrying unit 11 than the first cooling line 151 , so the second cooling line 153 does not need to be provided in the embodiment of the present invention.

In practical applications, the first output line 3513 is usually fluidly connected to a flow detector 3515, wherein the flow detector 3515 is used to detect the flow rate of the first cooling fluid on the first output line 3513 to ensure that the first cooling fluid is in the first The cooling line 351 flows normally. However, when the temperature of the first cooling fluid in the first output line 3513 is too high, the flow detector 3515 is often damaged.

In order to avoid the above situation, the present invention further disposes a cooling jacket 353 on the first output pipeline 3513, and makes the cooling jacket 353 contact the first output pipeline 3513, wherein the cooling jacket 353 is connected to a second input pipeline 3531 and a The second output line 3533. The second input line 3531 delivers a second cooling fluid to the cooling jacket 353 , and the second cooling fluid outputs the cooling jacket 353 through the second output line 3533 . The second cooling fluid located in the cooling jacket 353 will contact the first output line 3513 and absorb the heat of the first cooling fluid in the first output line 3513 through heat conduction, so as to reduce the first output line 3153. Cool the temperature of the fluid and avoid damage to the flow detector 3515.

Please refer to FIG. 7 , which is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus using a carrier plate according to the present invention. As shown in the figure, the thin film deposition apparatus 20 mainly includes at least one carrier plate 10/30 and a cavity 21, wherein the cavity 21 includes an accommodating space 26, and the carrier plate 10/30 is located in the accommodating space 26, and uses to carry at least one wafer 12 .

In an embodiment of the present invention, the thin film deposition apparatus 20 may be a physical vapor deposition apparatus, and a target 24 is disposed in the cavity 21 , wherein the target 24 faces the carrier plate 10 / 30 and/or the wafer 12. In an embodiment of the present invention, the cavity 21 may include a top plate 213 and a lower cavity 215 , wherein the top plate 213 is connected to the lower cavity 215 through an insulating portion 217 to form an accommodating space 26 therebetween, and the target The material 24 is disposed on the top plate 213 and faces the susceptor 10 / 30 and/or the wafer 12 .

The cavity 21 is provided with at least one air inlet 211 , wherein the air inlet 211 is fluidly connected to the accommodating space 26 of the cavity 21 and is used to deliver a process gas into the accommodating space 26 for the deposition process. For example, the process gas can be is an inert or reactive gas. In addition, an air suction port can also be provided on the cavity body 21, and the gas in the cavity body 21 can be extracted through the air suction port through the pump.

The stopper 27 is arranged in the accommodating space 26 of the cavity 21 and is located in the surrounding area of the carrier plate 10 / 30 . Specifically, one end of the blocking member 27 is connected to the cavity 21 , and the other end forms an opening. In an embodiment of the present invention, an annular flange 271 may be formed at the end of the blocking member 27 that is not connected to the cavity 21 , wherein the annular flange 271 is located around the opening of the blocking member 27 , and the cover ring 25 can be disposed on the blocking member 27 . on the annular flange 271.

The cavity 21 may include an inlet and outlet port 212 for conveying the wafers 12 . The carrier plate 10 / 30 can be connected to a support member 23 , wherein the drive unit 28 is connected through the support member 23 and drives the carrier plate 10 / 30 to move relative to the blocking member 27 . In an embodiment of the present invention, a plurality of conductive lines, the first/second input line 1511/3511/3531, the cooling jacket 353, the flow detector 3515, and the first/second output line can be arranged in the support 23 1513/3513/3533, a signal transmission line and/or a heat transfer gas transmission line 18, wherein the conductive lines are respectively connected to and input power signals to the first heating coil 131 and the second heating coil 133, and the signal transmission line is connected to the temperature sensing unit 17 and control unit 19.

In the embodiments of the present invention, a physical vapor deposition device is used as an embodiment of the invention, but the physical vapor deposition device is not a limitation of the scope of the right of the present invention, and the carrier plate 10/30 of the present invention can also be applied in practical application On a chemical vapor deposition apparatus or atomic layer deposition apparatus, basically As long as the carrier disk 10/30 of the thin film deposition apparatus needs to be heated and generate a bias voltage, the carrier disk 10/30 of the present invention is applicable.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included within the scope of the patent application of the present invention.

10: Carrier plate

11: Bearing unit

111: Bearing surface

115: Chassis

12: Wafer

13: Heating unit

131: First heating coil

133: Second heating coil

14: Thermal plate

142: Isolation Space

15: Cooling unit

151: First cooling line

1511: First input line

1513: First output pipeline

153: Second cooling line

161: First flow control valve

17: Temperature sensing unit

18: Heat transfer gas pipeline

19: Control unit

Claims (10)

A carrying plate capable of accurately adjusting temperature, comprising: a carrying unit, including a carrying surface for carrying at least one wafer; at least one heating unit, including at least one first heating coil and at least one second heating coil, wherein the first heating coil A heating coil is arranged in a radially outer region of the carrier plate, and the second heating coil is arranged in a radially inner region of the carrier plate, and the first heating coil and the second heating coil are independent Heating; at least one cooling unit, including at least one first cooling line for conveying a first cooling fluid, wherein the heating unit and the cooling unit are stacked, and the heating unit is closer to the bearing surface of the bearing unit than the cooling unit ; a first input line connected to the first cooling line; a first output line connected to the first cooling line, wherein the first input line inputs the first cooling fluid into the first cooling line, and the first The cooling fluid is output from the first cooling line through the first output line; a cooling jacket is arranged on the first output line and contacts the first output line, wherein the cooling jacket is used to reduce the output of the first output line the temperature of the first cooling fluid; a heat-conducting disk is located between the cooling unit and the heating unit, and contacts the cooling unit and the heating unit, and includes at least one raised portion, so as to be arranged on both sides of the heat-conducting disk There is at least one isolation space between the heating unit and the cooling unit to change the contact area between the heat-conducting plate and the cooling unit and the heating unit, wherein the heat-conducting plate is made of a metal material with high thermal conductivity; at least one temperature sensing a unit, disposed on the carrying unit, and used for measuring the temperature of the carrying unit; and a control unit, electrically connected to the temperature sensing unit, and adjusting the delivery to the first temperature according to the temperature measured by the temperature sensing unit The flow of the first cooling fluid of the cooling line. The carrier plate according to claim 1, wherein the cooling unit comprises at least one second cooling line for conveying a second cooling fluid, the first cooling line is arranged around the outer side of the second cooling line. The carrier plate according to claim 1, comprising a first input line, a first output line and a first flow control valve, the first input line and the first output line are connected to the first cooling line, the first A flow control valve is fluidly connected to the first input line, and the control unit controls the first flow control valve according to the temperature measured by the temperature sensing unit, so as to adjust the flow of the first input line to the first cooling line. The flow of the first cooling fluid. The carrier tray of claim 1, comprising: a second input line connected to the cooling jacket; a second output line connected to the cooling jacket, wherein the second input line delivers a second cooling fluid to the cooling jacket, and the second cooling fluid is output from the cooling jacket through the second output line. The carrier plate of claim 1, wherein the control unit adjusts the magnitude of a power signal input to the first heating coil and the second heating coil respectively according to the temperature sensed by the temperature sensing unit. A thin film deposition device, comprising: a cavity, including an accommodating space; a carrying tray, located in the accommodating space, comprising: a carrying unit, including a carrying surface for carrying at least one wafer; at least one heating unit , including at least one first heating coil and at least one second heating coil, wherein the first heating coil is arranged in a radially outer area of the carrier plate, and the second heating coil is arranged The first heating coil and the second heating coil are independently heated; at least one cooling unit includes at least one first cooling pipeline for conveying a first cooling fluid, The heating unit and the cooling unit are arranged in layers, and the heating unit is closer to the bearing surface of the bearing unit than the cooling unit; a first input pipeline is connected to the first cooling pipeline; a first output pipeline is connected to the first output pipeline. a cooling line, wherein the first input line inputs the first cooling fluid into the first cooling line, and the first cooling fluid outputs the first cooling line through the first output line; a cooling jacket is disposed in the first cooling line on the first output line and in contact with the first output line, wherein the cooling jacket is used to reduce the temperature of the first cooling fluid output from the first output line; a heat conducting plate is located between the cooling unit and the heating unit , and contact the cooling unit and the heating unit, and include at least one protrusion, so that there is at least one isolation space between the heating unit and the cooling unit arranged on both sides of the heat-conducting plate, so as to change the heat-conducting plate and the cooling unit. the contact area between the cooling unit and the heating unit, wherein the heat-conducting plate is made of a metal material with high thermal conductivity; at least one temperature sensing unit is disposed on the carrying unit and used to measure the temperature of the carrying unit; and a control unit, electrically connected to the temperature sensing unit, and adjust the flow rate of the first cooling fluid delivered to the first cooling pipeline according to the temperature measured by the temperature sensing unit; and at least one air inlet fluidly connected to the cavity The accommodating space is used to deliver a process gas to the accommodating space. The thin film deposition apparatus of claim 6, wherein the cooling unit comprises at least one second cooling line for conveying a second cooling fluid, and the first cooling line is arranged around the outside of the second cooling line. The thin film deposition apparatus according to claim 6, comprising a first input line, a first output line and a first flow control valve, the first input line and the second output line are connected to the first cooling line, the The first flow control valve is fluidly connected to the first input line, and the control unit controls the first flow control valve according to the temperature measured by the temperature sensing unit, so as to adjust the flow of the first input line to the first cooling line. The flow of the first cooling fluid. The thin film deposition apparatus of claim 6, comprising: a second input line connected to the cooling jacket; a second output line connected to the cooling jacket, wherein the second input line conveys a second cooling fluid to the cooling jacket, and the second cooling fluid is output from the cooling jacket through the second output line. The thin film deposition apparatus as claimed in claim 9, comprising a support member connected to and driving the displacement of the carrier plate, and the first input line, the first output line, the cooling jacket, the second input line and the second The output line is located within the support.

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