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TWI767315B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI767315B
TWI767315B TW109130737A TW109130737A TWI767315B TW I767315 B TWI767315 B TW I767315B TW 109130737 A TW109130737 A TW 109130737A TW 109130737 A TW109130737 A TW 109130737A TW I767315 B TWI767315 B TW I767315B
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TW
Taiwan
Prior art keywords
resin
semiconductor device
semiconductor
wiring board
wafer
Prior art date
Application number
TW109130737A
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English (en)
Other versions
TW202135269A (zh
Inventor
菅生悠樹
天野彩那
服部圭一郎
渡部武志
Original Assignee
日商鎧俠股份有限公司
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Publication of TW202135269A publication Critical patent/TW202135269A/zh
Application granted granted Critical
Publication of TWI767315B publication Critical patent/TWI767315B/zh

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Abstract

實施方式之半導體裝置具備：配線基板；半導體晶片，其搭載於配線基板；含樹脂層，其接著於配線基板，以將半導體晶片固定於配線基板。含樹脂層包含125℃下之破壞強度為15 MPa以上之含樹脂材。

Description

半導體裝置
此處揭示之實施方式係關於一種半導體裝置。
為了實現半導體裝置之小型化、高速化、高功能化等，使具有於1個封裝體內積層密封有複數個半導體晶片之構造之半導體記憶裝置等半導體封裝體實用化。半導體記憶裝置具備如下構造：例如於配線基板上嵌埋控制器晶片，並且接著FOD(Film On Device，裝置上薄膜)材，且於FOD材上多級地積層記憶體晶片。於構成此種半導體記憶裝置之半導體裝置中，記憶體晶片之積層數增加，以諸如16級、24級、32級之個數積層記憶體晶片。於具有多級積層之半導體晶片之半導體裝置中，有接著於配線基板之FOD材產生龜裂，使基板配線斷裂而產生不良之虞，因此，要求抑制如FOD材之接著層之龜裂。
實施方式提供一種半導體裝置，該半導體裝置能夠抑制將半導體晶片接著於配線基板上之接著層之龜裂及由此引起之基板配線之斷裂等。
實施方式之半導體裝置具備：配線基板；半導體晶片，其搭載於上述配線基板上；及含樹脂層，其接著於上述配線基板，以將上述半導體晶片固定於上述配線基板上；且上述含樹脂層包含125℃下之破壞強度為15 MPa以上之含樹脂材。
以下，參照圖式對實施方式之半導體裝置進行說明。再者，各實施方式中，對實質上相同之構成部位標附相同符號，有時省略一部分說明。圖式係示意性者，存在厚度與平面尺寸之關係、各部分之厚度比率等與實物不同之情況。於無特別明確記載之情況下，說明中之上下等表示方向之術語表示將下述基板之半導體晶片搭載面設為上時之相對方向，有時與以重力加速度方向為基準之實際方向不同。
(第1實施方式) 圖1係表示第1實施方式之半導體裝置之剖視圖。圖1所示之半導體裝置1具備：配線基板2；第1半導體晶片3，其搭載於配線基板2上；含樹脂層(FOD)4，其嵌埋第1半導體晶片3並固定於配線基板2；矽製或樹脂製間隔晶片5，其搭載於含樹脂層4上；複數個第2半導體晶片6之積層體7，其搭載於間隔晶片5上；及密封樹脂層8，其以密封第1半導體晶片3及第2半導體晶片6之積層體7等之方式設置於配線基板2上。
配線基板2具有配線網，該配線網由設置於例如絕緣性樹脂基板或絕緣性陶瓷基板等之表面之配線層9及設置於內部之配線層10等構成，具體可列舉使用諸如玻璃-環氧樹脂此類絕緣樹脂之印刷配線板等。配線層9、10例如包含銅或銅合金、金或金合金等金屬材料。配線基板2具有成為外部端子之形成面等之第1面2a、及成為半導體晶片3、6之搭載面之第2面2b。
於配線基板2之第2面2b上搭載有第1半導體晶片3，第1半導體晶片3嵌埋於含樹脂層4內，並且搭載於配線基板2之晶片搭載區域。含樹脂層4之一部分接著於配線基板2上。第1半導體晶片3具有40 μm左右之厚度，含樹脂層4具有80～150 μm左右之厚度，又，視情況具有40～150 μm左右之厚度。如下文上述，嵌埋第1半導體晶片3之含樹脂層4包含125℃下之破壞強度為15 MPa以上之含樹脂材。構成含樹脂層4之含樹脂材(已硬化之含樹脂材)係指用於形成含樹脂層4之樹脂組合物之硬化物。作為第1半導體晶片3，例如可列舉於用作第2半導體晶片6之半導體記憶體晶片與外部設備之間收發數位信號之控制器晶片或介面晶片、邏輯晶片、RF(radio frequency，射頻)晶片等系統LSI(Large Scale Integration，大型積體電路)晶片，但並不限定於該等。
圖2係放大表示圖1所示之半導體裝置之一部分之剖視圖。如圖2所示，第1半導體晶片3具有電極3A，該等電極3A經由接合線11與配線基板2之配線層9電性連接。藉由將控制器晶片等第1半導體晶片3直接搭載於配線基板2上，可縮短第1半導體晶片3與配線基板2之間之配線長度。藉此，可謀求第1半導體晶片3與配線基板2之間之信號傳輸速度之提高等，從而可應對半導體裝置1之高速化。進而，由於第1半導體晶片3嵌埋於含樹脂層4內，因此不會降低第2半導體晶片6相對於配線基板2之搭載性，或者妨礙封裝體尺寸之小型化等。因此，可提供小型且與高速裝置對應之半導體裝置1。
控制器晶片等第1半導體晶片3之外形形狀通常較半導體記憶體晶片等第2半導體晶片6之外形形狀小。因此，將搭載於配線基板2上之第1半導體晶片3嵌埋於含樹脂層4內後，於含樹脂層4上積層搭載複數個第2半導體晶片6。作為第2半導體晶片6之具體例，可列舉諸如NAND(Not AND，反及)型快閃記憶體此類半導體記憶體晶片，但並不限於此。於第1實施方式中，積層搭載有16個半導體記憶體晶片作為第2半導體晶片6。再者，第2半導體晶片6之積層數並不限於16級，亦可為24級、32級等。
如圖2所示，複數個(例如16塊以上)第2半導體晶片6分別具有沿著1個端部排列之電極6A。搭載於含樹脂層4上之複數個第2半導體晶片6中第1級至第4級之第2半導體晶片6以露出各自之電極6A之方式，沿第1方向(圖中為紙面右方向)錯開排列有電極6A之端部而呈階梯狀積層，構成第1積層部。第5級至第8級之第2半導體晶片6以露出各自之電極6A之方式，沿與第1方向為相反方向之第2方向(圖中為紙面左方向)錯開排列有電極6A之端部而呈階梯狀積層，構成第2積層部。第9級至第12級之第2半導體晶片6以露出各自之電極6A之方式，沿第1方向錯開排列有電極6A之端部而呈階梯狀積層，構成第3積層部。第13級至第16級之第2半導體晶片6以露出各自之電極6A之方式，沿第2方向錯開排列有電極6A之端部而呈階梯狀積層，構成第4積層部。
如圖2所示，間隔晶片5固定黏著於含樹脂層4。複數個第2半導體晶片6中第1級之第2半導體晶片6經由接著層13固定黏著於間隔晶片5。接著層13使用普通之DAF(Die Attach Film，晶片黏結薄膜)等接著劑。除第1級以外之第2半導體晶片6如圖2所示藉由DAF等所構成之接著層13而固定黏著在位於下側之第2半導體晶片6。再者，配線基板2與第1半導體晶片3之間亦可藉由DAF等所構成之未圖示之接著層而固定黏著。第2半導體晶片6之電極6A經由接合線12與配線基板2之配線層9電性連接。關於電特性或信號特性相同之電極6A，能夠以接合線12依次連接配線基板2之配線層9與複數個第2半導體晶片6之電極6A。第1級至第4級之第2半導體晶片6之電極6A藉由接合線12依次連接，且以接合線12連接第1級之第2半導體晶片6之電極6A與配線基板2之配線層9。第5～8級之第2半導體晶片6、第9～12級之第2半導體晶片6、及第13～16級之第2半導體晶片6亦同樣如此。
複數個第2半導體晶片6中第5級、第9級、及第13級之第2半導體晶片6中，分別排列有被線接合之電極6A之端部較位於各自之下側之第2半導體晶片6突出。因此，第5級、第9級、及第13級之第2半導體晶片6之厚度設定得較除該等以外之第2半導體晶片6厚，以便不因線接合時施加之力而產生裂痕或破裂等。例如，第5級、第9級、及第13級之第2半導體晶片6具有55 μm左右之厚度。除該等以外之第2半導體晶片6為了降低積層體7之厚度及基於其之半導體裝置1之厚度，實現半導體裝置1之薄型化，例如具有36 μm左右之厚度。
於配線基板2之第2面2b上，以將第1半導體晶片3及第2半導體晶片6之積層體7與接合線11、12等一併密封之方式，例如模鑄成形有使用環氧樹脂等絕緣樹脂之密封樹脂層8。由該等構成要件構成第1實施方式之半導體裝置1。此種半導體裝置1中，第1及第2半導體晶片3、6例如具有3 ppm左右之線膨脹係數。配線基板2例如具有20 ppm左右之線膨脹係數。密封樹脂層8例如具有10 ppm左右之線膨脹係數。構成含樹脂層4之含樹脂材例如具有70 ppm以下之線膨脹係數。半導體裝置1例如具有1.3 mm左右之厚度。
除如上所述之半導體裝置1之構成材料間之線膨脹係數之差異以外，隨著第2半導體晶片6之積層數增加，擔心半導體裝置1對熱循環試驗(TCT：Thermal Cycle Test)之耐受性降低。即，由於配線基板2與第2半導體晶片6之積層體7之間之線膨脹係數差等，因TCT之溫度差而產生之應力會導致嵌埋有第1半導體晶片3之含樹脂層4容易產生裂痕。此種情況隨著第2半導體晶片6之積層數增加，第2半導體晶片6之合計厚度變厚，含樹脂層4會越容易產生裂痕。應力集中於含樹脂層4產生之裂痕之前端，使與裂痕相接之配線層9產生斷裂(配線斷開)而引起不良。
為了抑制含樹脂層4之裂痕及由裂痕引起之配線層9之斷裂(配線斷開)，於第1實施方式之半導體裝置1中，含樹脂層4由125℃下之破壞強度為15 MPa以上之含樹脂材構成。半導體裝置1之TCT係將例如-55℃×15分鐘＋125℃×15分鐘之熱循環設為1個循環，藉由將此種熱循環施加例如700個循環、進而1000個循環，而評估半導體裝置1之可靠性。於此種半導體裝置1之TCT中，藉由以125℃下之破壞強度為15 MPa以上之含樹脂材構成含樹脂層4，可抑制基於因溫度差而產生之應力而於含樹脂層4產生裂痕、進而因應力集中於裂痕之前端而導致配線層9發生斷裂(配線斷開)。即，可提高半導體裝置1之可靠性。
具體地對含樹脂層4於125℃下之破壞強度與半導體裝置1之TCT中發生裂痕之關係進行說明。此處，將包含作為熱硬化樹脂之環氧樹脂組合物、作為用以片材化之高分子成分之丙烯酸系橡膠、及作為無機填充材之二氧化矽(氧化矽)粒子的混合組合物(環氧樹脂-丙烯酸系橡膠混合組合物(硬化前組合物))之硬化物，應用於含樹脂層4。再者，環氧樹脂組合物包含酚系樹脂作為硬化劑。於製備環氧樹脂-丙烯酸系橡膠混合組合物時，藉由改變環氧樹脂之環氧基當量、作為硬化劑之酚系樹脂之羥基當量、環氧樹脂與酚系樹脂之當量比、丙烯酸系橡膠之重量平均分子量、丙烯酸系橡膠之調配比率等，而製作出125℃下之破壞強度不同之4個試樣。對試樣1、試樣2、試樣3、及試樣4之硬化物實施拉伸試驗，測定其等對於125℃下之拉伸之破斷強度。將測定結果示於圖3。此處所言之破壞強度表示在125℃下之拉伸試驗中之破斷強度。
如圖3所示，試樣1之硬化物於125℃下之破斷強度(破壞強度)為40 MPa，試樣2之硬化物於125℃下之破斷強度(破壞強度)為23 MPa。該等試樣1、2之硬化物滿足125℃下之破壞強度為15 MPa以上之條件，相當於實施例之含樹脂層4(環氧樹脂-丙烯酸系橡膠混合組合物之硬化物)。另一方面，試樣3之硬化物於125℃下之破斷強度(破壞強度)為12 MPa，試樣4之硬化物於125℃下之破斷強度(破壞強度)為6 MPa。該等試樣3、4之硬化物未滿足125℃下之破壞強度為15 MPa以上之條件，相當於相對於實施方式的比較例之含樹脂層(環氧樹脂-丙烯酸系橡膠混合組合物之硬化物)。
使用上述試樣1、試樣2、試樣3、及試樣4，製作圖1所示之半導體裝置1(實施例1、實施例2、比較例1、及比較例2)。半導體裝置1如上所述，其係於配線基板2上將第1半導體晶片3嵌埋並固定於含樹脂層4中，且於含樹脂層4上搭載有16級第2半導體晶片6者。進而，使用125℃下之破斷強度(破壞強度)為15 MPa之試樣5，以同樣之方式製作出半導體裝置1(實施例3)。於-55℃×15分鐘＋125℃×15分鐘之條件下，對該等實施例1～3及比較例1～2之半導體裝置實施TCT。針對各例將TCT實施700個循環之後，評估含樹脂層4有無裂痕。將含樹脂層4未產生裂痕者歸為良品，將產生了裂痕者歸為次品。針對各例，分別實施100個樣品之TCT，分析不良比率。將結果示於表1。又，關於實施例1～2及比較例1～2之半導體裝置，將1000個循環之TCT後之配線層之代表例示於圖4至圖7。
表1
   含樹脂層 TCT(700個循環)後之不良比率(100個中之次品數)
實施例1 試樣1(破斷強度：40 MPa) 0%(0/100)
實施例2 試樣2(破斷強度：23 MPa) 0%(0/100)
實施例3 試樣5(破斷強度：15 MPa) 0%(0/100)
比較例1 試樣3(破斷強度：12 MPa) 1%(1/100)
比較例2 試樣4(破斷強度：6 MPa) 17%(17/100)
如表1所示，可知：具有由125℃下之破壞強度為15 MPa以上之含樹脂材構成之含樹脂層4之半導體裝置1(實施例1～3)於700個循環之TCT後含樹脂層4均未產生裂痕，不良比率為0%。此點從圖4及圖5之配線層之平面照片來看亦較明顯，並未產生裂痕。另一方面，可知：具有由125℃下之破壞強度未達15 MPa之含樹脂材構成之含樹脂層4之半導體裝置1(比較例1～2)於700個循環之TCT後，含樹脂層4產生了裂痕之樣品均有所增加，可靠性較差。此點從圖6及圖7之配線層之平面照片來看亦較明顯，於含樹脂層4產生了裂痕(圖中以箭頭表示)。
TCT後之半導體裝置1之不良隨著搭載於含樹脂層4上之第2半導體晶片6之數量增加而容易產生。因此，實施方式對基於搭載於含樹脂層4上之第2半導體晶片6之數量之厚度較厚之半導體裝置1有效。具體而言，於第2半導體晶片6之積層體7之厚度(將半導體晶片6之合計厚度與用於接著半導體晶片6之接著層13之合計厚度相加所得之值)相對於半導體裝置1之整體厚度為67%以上之情形時，實施方式之半導體裝置1有效地發揮作用，可抑制含樹脂層4之裂痕及由裂痕引起之基板配線之破斷。於第1實施方式中，對在嵌埋第1半導體晶片3之含樹脂層4上搭載第2半導體晶片6之積層體7之情況進行了說明，但並不限於此。對於在配線基板2上搭載第2半導體晶片6之積層體7之情況，當第2半導體晶片6之積層體相對於半導體裝置1之厚度之比率為67%以上時，作為由125℃下之破壞強度為15 MPa以上之含樹脂材構成之含樹脂層4之接著層亦有效地發揮作用。
作為用於形成含樹脂層4之樹脂組合物，例如使用含有熱硬化性環氧樹脂之組合物、含有聚醯亞胺樹脂之組合物、含有丙烯酸系樹脂之組合物、含有酚系樹脂之組合物等。該等組合物中，適宜使用含有熱硬化性環氧樹脂之組合物。具體而言，包含作為熱硬化樹脂之環氧樹脂組合物、作為高分子成分之丙烯酸系橡膠、及作為無機填充材之二氧化矽粒子、氧化鋁粒子、氧化鋯粒子等之混合組合物較為合適。關於此種混合組合物，例如可藉由應用如下所示之條件，將該硬化物於125℃下之破壞強度設為15 MPa以上。混合組合物(樹脂組合物)可除上述成分以外亦包含一般之熱硬化性接著劑等中使用之硬化促進劑、各種添加劑、溶劑等。
作為環氧樹脂，可單獨或併用雙酚型環氧樹脂、酚系酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等。又，亦可使用多官能環氧樹脂、含有雜環之環氧樹脂、脂環式環氧樹脂等通常已知之環氧樹脂。環氧樹脂之環氧基當量較佳為150～2000 g/eq，進而更佳為150～1000 g/eq。藉由使用環氧基當量相對較低之環氧樹脂，與硬化劑之交聯變得緻密，從而可提高包含環氧樹脂之組合物之硬化物之破壞強度。
作為環氧樹脂之硬化劑，可使用酚系樹脂。作為酚系樹脂，可單獨或併用酚醛清漆型酚系樹脂、可溶酚醛型酚系樹脂等。酚系樹脂之羥基當量較佳為90～220 g/eq，進而更佳為90～180 g/eq。藉由使用羥基當量相對較低之酚系樹脂，與環氧樹脂之交聯變得緻密，從而可提高包含環氧樹脂之組合物之硬化物之破壞強度。進而，環氧樹脂與酚系樹脂之當量比(環氧樹脂之當量/酚系樹脂之當量)較佳為0.8～1.2。藉由使用此種當量比之混合物，於環氧樹脂之環氧基與酚系樹脂之羥基之反應中，可減少多餘之官能基，藉此有望提高硬化物之破壞強度。
樹脂組合物中例如可含有丙烯酸系橡膠作為高分子成分。丙烯酸系橡膠之重量平均分子量較佳為50萬～100萬，進而較佳為65萬～100萬。藉由使用分子量較高之丙烯酸系橡膠，可期待高分子彼此之交聯，有望提高破壞強度。又，丙烯酸系橡膠較佳為包含交聯性官能基。作為具有交聯性官能基之官能性單體，可使用丙烯酸縮水甘油酯、丙烯酸等。藉由使丙烯酸系橡膠包含交聯性官能基，有望與環氧樹脂或酚系樹脂進行交聯反應，於材料間形成複合性結合，藉此，有望提高破壞強度。
進而，於樹脂組合物中，作為高分子成分之丙烯酸系橡膠之調配比率較佳為1～20質量%。藉由使丙烯酸系橡膠之調配比率相對較低，熱硬化性環氧樹脂與酚系樹脂之調配比率相對提高，有望提高該等組合物之硬化物之破壞強度。又，於樹脂組合物中，環氧樹脂、酚系樹脂、及丙烯酸系橡膠之各成分間之溶解度參數(SP值)之差較佳為未達5.0，進而更佳為未達3.0。藉由使各材料之溶解度參數接近，於材料間形成複合性結合，藉此，有望提高破壞強度。
樹脂組合物中例如可含有無機化合物作為無機填充材。作為無機化合物，使用二氧化矽粒子、氧化鋁粒子、氧化鋯粒子等，但亦可為除該等以外之無機化合物。於樹脂組合物中，無機化合物之含量較佳為30～65質量%，進而更佳為35～60質量%。藉由調配此種含量之無機化合物，可提高樹脂組合物之硬化物(含樹脂物)之破壞強度。
構成含樹脂層4之樹脂組合物之硬化物較佳為125℃下之破壞強度為15 MPa以上，且線膨脹係數為70 ppm以下。藉此，含樹脂層4與第1及第2半導體晶片3、6等之線膨脹係數差得以降低，進而可更有效地抑制含樹脂層4之裂痕。進而，含樹脂層4較佳為與配線基板2之構成材料即金等金屬材料(配線材料)或樹脂材料(絕緣材料)等之接著強度為10 MPa以上。藉此，可更有效地抑制含樹脂層4之裂痕及基於其之基板配線之破斷。
含樹脂層4較佳為具有40 μm以上150 μm以下之厚度。若含樹脂層4之厚度未達40 μm，則有含樹脂材更容易受到因TCT之溫度差而產生之應力影響，對TCT之耐受性降低之虞。又，若含樹脂層4之厚度超過150 μm，則對封裝體尺寸之小型化不利。其原因在於：於此種情形時，若為了實現同等之封裝體厚度而使密封樹脂層8之厚度變薄，擔心封裝體之耐衝擊性降低。
圖1示出具有配置於含樹脂層4與第2半導體晶片6之積層體7之間之間隔晶片5之半導體裝置1，但第1實施方式之半導體裝置1並不限於此。圖8示出第1實施方式之半導體裝置1之變化例之剖視圖。第1實施方式之變化例之半導體裝置1如圖8所示，亦可不具有間隔晶片5。於圖8所示之半導體裝置1中，第2半導體晶片6之積層體7中之第1級之第2半導體晶片6固定黏著於含樹脂層4。第1實施方式之半導體裝置1亦可具有此種構成。
(第2實施方式) 圖9係表示第2實施方式之半導體裝置之剖視圖。圖8所示之半導體裝置21具備：配線基板2；第1半導體晶片23，其經由第1接著層22而固定黏著於配線基板2上；複數個第2半導體晶片25之積層體26，其經由第2接著層24而固定黏著於配線基板2上；及密封樹脂層8，其以密封第1半導體晶片23及第2半導體晶片25之積層體26等之方式設置於配線基板2上。配線基板2具有與第1實施方式相同之構成。於第2半導體晶片25之積層體26中，下側之晶片為第1晶片，上側之晶片為第2晶片。
作為第1半導體晶片23，與第1實施方式同樣地，可舉出在用作第2半導體晶片25的半導體記憶體晶片與外部設備之間收發數位信號之控制器晶片或介面晶片、邏輯晶片、RF晶片等系統LSI晶片，但非限定於此。第1半導體晶片23例如具有80 μm左右之厚度。此種第1半導體晶片23藉由第1接著層22而固定黏著於配線基板2。於第2實施方式之半導體裝置21中，第1接著層22使用一般之DAF材。第1半導體晶片23之電極(未圖示)經由接合線11與配線基板2之配線層9電性連接。
作為第2半導體晶片25，與第1實施方式同樣地，可舉出諸如NAND型快閃記憶體之半導體記憶體晶片，但非限於此。於第2實施方式中，於配線基板2上積層而搭載有2個第2半導體晶片25。2個第2半導體晶片25各自具有250 μm左右之厚度。於積層此種厚度之第2半導體晶片25並搭載於配線基板2上時，下側之第2半導體晶片25藉由包含125℃下之破壞強度為15 MPa以上之含樹脂材的第2接著層(第1接著劑層)24而接著於配線基板2。第2接著層(第1接著劑層)24介置於配線基板2與下側之第2半導體晶片25之間。將上側之第2半導體晶片25接著於下側之第2半導體晶片25上之第3接著層(第2接著劑層)27中，亦可與第1接著層22同樣地使用一般之DAF材，於此種情形時，第2接著層24相當於第1實施方式之含樹脂層4，第3接著層27相當於第1實施方式之接著層13。又，介置於上側之第2半導體晶片25與下側之第2半導體晶片25之間的第3接著層27中，亦可與第2接著層24同樣地使用125℃下之破壞強度為15 MPa以上之含樹脂材。
搭載於配線基板2上之2個第2半導體晶片25以露出下側之第2半導體晶片25之電極之方式，錯開排列有電極之端部而呈階梯狀積層。第2半導體晶片25之電極(未圖示)經由接合線12與配線基板2之配線層9電性連接。關於電特性或信號特性相同之電極墊，配線基板2之配線層9與2個第2半導體晶片25之電極墊經由接合線12依次連接。
於配線基板2之第2面2b上，以將第1半導體晶片23及第2半導體晶片25之積層體26與接合線11、12一併密封之方式，例如以模鑄成形而形成使用環氧樹脂等絕緣樹脂之密封樹脂層8。由該等構成要件構成第2實施方式之半導體裝置21。於此種半導體裝置21中，第1及第2半導體晶片23、25例如具有3 ppm左右之線膨脹係數。配線基板2例如具有20 ppm左右之線膨脹係數。密封樹脂層8例如具有10 ppm左右之線膨脹係數。構成第2接著層24之含樹脂材例如具有70 ppm以下左右之線膨脹係數。又，半導體裝置21例如具有0.8 mm左右之厚度。
除如上所述之半導體裝置21之構成材料間之線膨脹係數之差異以外，以2個第2半導體晶片25之合計厚度增加，第2半導體晶片25之積層體26之厚度(將半導體晶片25之合計厚度與第3接著層27之厚度相加所得之值)相對於半導體裝置21之厚度為67%以上之方式使積層體26相對於封裝體厚度之比率較高時，擔心半導體裝置21對TCT之耐受性降低。即，有由於配線基板2與第2半導體晶片25之積層體26之間之線膨脹係數差等，因TCT之溫度差而產生之應力會導致第2接著層24容易產生裂痕之虞。應力集中於第2接著層24產生之裂痕之前端，使與裂痕相接之配線層9產生斷裂(配線斷開)而引起不良。
與上述第1實施方式同樣地，為了抑制第2接著層(第1接著劑層)24之裂痕及由裂痕引起之配線層9之斷裂(配線斷開)，於第2實施方式之半導體裝置21中，第2接著層24由125℃下之破壞強度為15 MPa以上之含樹脂材構成。即便於施加了例如700個循環、進而1000個循環之具有如上所述之條件之熱循環之情形時，藉由以125℃下之破壞強度為15 MPa以上之含樹脂材構成第2接著層24，亦可抑制基於因溫度差而產生之應力於第2接著層24產生裂痕，進而因應力集中於裂痕之前端而導致配線層9產生斷裂(配線斷開)。即，可提高半導體裝置21之可靠性。
第2接著層24中應用之含樹脂材之具體構成與第1實施方式相同。即，作為第2接著層24之含樹脂材以如下方式形成：將包含作為熱硬化樹脂之環氧樹脂組合物、作為高分子成分之丙烯酸系橡膠、及作為無機填充材之二氧化矽粒子、氧化鋁粒子、氧化鋯粒子等之混合組合物用作將下側之第2半導體晶片25固定黏著於配線基板2之接著劑，並使此種接著劑硬化。作為含樹脂材之混合組合物(樹脂組合物)之各成分之構成、各成分之混合比率等亦與第1實施方式相同。進而，第2接著層24與第1實施方式相同，線膨脹係數較佳為70 ppm以下，與配線基板2之構成材料即金等金屬材料(配線材料)或樹脂材料(絕緣材料)等之接著強度較佳為10 MPa以上。第2接著層24之厚度較佳為40 μm以上150 μm以下。
再者，對本發明之若干實施方式進行了說明，但該等實施方式係作為例子提出，並非意圖限定發明之範圍。該等實施方式能以其他各種方式實施，且可於不脫離發明主旨之範圍內進行各種省略、替換、變更。該等實施方式及其變化包含於發明之範圍或主旨中，同時包含於發明專利申請範圍所記載之發明及其均等之範圍內。
[相關申請案] 本申請案享有以日本專利申請案2020-39951號(申請日：2020年3月9日)為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
1:半導體裝置 2:配線基板 2a:第1面 2b:第2面 3:第1半導體晶片 3A:電極 4:含樹脂層 5:間隔晶片 6:第2半導體晶片 6A:電極 7:積層體 8:密封樹脂層 9:配線層 10:配線層 11:接合線 12:接合線 13:接著層 21:半導體裝置 22:第1接著層 23:第1半導體晶片 24:第2接著層 25:第2半導體晶片 26:積層體 27:第3接著層
圖1係表示第1實施方式之半導體裝置之剖視圖。 圖2係放大表示圖1所示之半導體裝置之一部分之剖視圖。 圖3係表示作為實施方式之含樹脂層之含樹脂材(試樣1、2)及作為比較例之含樹脂材(試樣3、4)之拉伸試驗結果之圖。 圖4係表示具有包含試樣1之含樹脂層之半導體裝置循環1000次TCT(Thermal Cycling Test，熱循環試驗)試驗後之配線基板之狀態之圖。 圖5係表示具有包含試樣2之含樹脂層之半導體裝置循環1000次TCT試驗後之配線基板之狀態之圖。 圖6係表示具有包含試樣3之含樹脂層之半導體裝置循環1000次TCT試驗後之配線基板之狀態之圖。 圖7係表示具有包含試樣4之含樹脂層之半導體裝置循環1000次TCT試驗後之配線基板之狀態之圖。 圖8係表示第1實施方式之半導體裝置之變化例之剖視圖。 圖9係表示第2實施方式之半導體裝置之剖視圖。
1:半導體裝置
2:配線基板
2a:第1面
2b:第2面
3:第1半導體晶片
4:含樹脂層
5:間隔晶片
6:第2半導體晶片
7:積層體
8:密封樹脂層
9:配線層
10:配線層
11:接合線
12:接合線

Claims (20)

  1. 一種半導體裝置，其具備： 配線基板； 半導體晶片，其搭載於上述配線基板；及 含樹脂層，其接著於上述配線基板，以將上述半導體晶片固定於上述配線基板；且 上述含樹脂層包含125℃下之破壞強度為15 MPa以上之含樹脂材。
  2. 如請求項1之半導體裝置，其中上述含樹脂材之線膨脹係數為70 ppm以下。
  3. 如請求項1之半導體裝置，其中上述含樹脂材與上述配線基板之構成材料之接著強度為10 MPa以上。
  4. 如請求項1之半導體裝置，其中上述含樹脂層之厚度為40 μm以上150 μm以下。
  5. 如請求項1之半導體裝置，其中上述半導體晶片嵌埋於接著在上述配線基板上之上述含樹脂層內。
  6. 如請求項1之半導體裝置，其中上述含樹脂層介置於上述配線基板與上述半導體晶片之間，以將上述半導體晶片接著於上述配線基板。
  7. 如請求項1之半導體裝置，其中上述含樹脂材係含有環氧樹脂、酚系樹脂、丙烯酸系橡膠及無機填充材的樹脂組合物之硬化物。
  8. 如請求項7之半導體裝置，其中上述環氧樹脂之環氧基當量為150 g/eq以上2000 g/eq以下，上述酚系樹脂之羥基當量為90 g/eq以上220 g/eq以下， 上述環氧樹脂之上述環氧基當量相對於上述酚系樹脂之上述羥基當量之比率為0.8以上1.2以下。
  9. 如請求項7之半導體裝置，其中上述丙烯酸系橡膠之重量平均分子量為500000以上1000000以下，上述樹脂組合物中之上述丙烯酸系橡膠之調配比率為1質量%以上20質量%以下。
  10. 一種半導體裝置，其具備： 配線基板； 第1半導體晶片，其搭載於上述配線基板； 含樹脂層，其設置於上述配線基板上，以將上述第1半導體晶片嵌埋於上述配線基板；及 複數個第2半導體晶片，其等積層而搭載於上述第1半導體晶片上；且 上述含樹脂層包含125℃下之破壞強度為15 MPa以上之含樹脂材。
  11. 如請求項10之半導體裝置，其進而具備：間隔晶片，其介置於上述含樹脂層與上述複數個第2半導體晶片之間。
  12. 如請求項10之半導體裝置，其中包含上述複數個第2半導體晶片之積層體於積層方向上之厚度比率為上述半導體裝置之整體厚度之67%以上。
  13. 如請求項10之半導體裝置，其中上述含樹脂材之線膨脹係數為70 ppm以下。
  14. 如請求項10之半導體裝置，其中上述含樹脂材與上述配線基板之構成材料之接著強度為10 MPa以上。
  15. 如請求項10之半導體裝置，其中上述含樹脂層之厚度為40 μm以上150 μm以下。
  16. 一種半導體裝置，其具備： 配線基板； 複數個半導體晶片，其等搭載於上述配線基板；及 接著層，其將上述複數個半導體晶片中之下側之第1晶片與上述配線基板、及上述複數個半導體晶片中之上側之第2晶片與上述第1晶片接著；且 將上述第1晶片與上述配線基板接著之接著劑層包含125℃下之破壞強度為15 MPa以上之含樹脂材。
  17. 如請求項16之半導體裝置，其中包含上述複數個半導體晶片之積層體於積層方向上之厚度比率為上述半導體裝置之整體厚度之67%以上。
  18. 如請求項16之半導體裝置，其中上述含樹脂材之線膨脹係數為70 ppm以下。
  19. 如請求項16之半導體裝置，其中上述含樹脂材與上述配線基板之構成材料之接著強度為10 MPa以上。
  20. 如請求項16之半導體裝置，其中上述接著劑層之厚度為40 μm以上150 μm以下。
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