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TWI636884B - Method for treatment - Google Patents

Method for treatment Download PDF

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Publication number
TWI636884B
TWI636884B TW103133317A TW103133317A TWI636884B TW I636884 B TWI636884 B TW I636884B TW 103133317 A TW103133317 A TW 103133317A TW 103133317 A TW103133317 A TW 103133317A TW I636884 B TWI636884 B TW I636884B
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adhesive layer
adhesive
substrate
separation layer
layer
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TW103133317A
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Chinese (zh)
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TW201527116A (en
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中村彰彦
藤井恭
石田信悟
岩田泰昌
今井洋文
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東京應化工業股份有限公司
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  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laminated Bodies (AREA)

Abstract

本發明之課題係不溶解第二之黏著劑層而從層積體分離第一支持體。 An object of the present invention is to separate a first support from a laminate without dissolving the second adhesive layer.

做為解決手段,處理方法係包含於設置第一支援板(13)之分離層(14)之面,貼附基板(11)之第一貼附工程、和之後,於背向於貼附基板(11)之第一支援板(13)之面,貼附第二支援板(23)之第二貼附工程、和第二貼附工程之後,經由於分離層(14)照射光線,使該分離層(14)變質,分離第一支援板(13)與基板(11)之分離工程。 As a solution, the processing method is included on the surface of the separation layer (14) on which the first support plate (13) is disposed, the first attachment process of the substrate (11) is attached, and then, the substrate is attached to the back surface. (11) The surface of the first support plate (13) is attached to the second attachment plate of the second support plate (23) and the second attachment process, and then the light is irradiated through the separation layer (14). The separation layer (14) is degraded to separate the separation of the first support plate (13) from the substrate (11).

Description

處理方法 Approach

本發明係關於處理方法。 The present invention relates to a method of treatment.

近年以來,電子裝置製品有小型化、輕量化,高性能化之要求。晶片之連接技術之一的覆晶安裝技術係做為實現小型化、高性能化、低成本化之關鍵技術,被擴大地加以利用。 In recent years, electronic device products have been required to be compact, lightweight, and high-performance. The flip chip mounting technology, which is one of the wafer connection technologies, has been expanded and utilized as a key technology for miniaturization, high performance, and low cost.

於專利文獻1中,揭示有用於使用於半導體晶圓之貼附時、晶圓背面研磨時、以及覆晶接合時之薄膜狀黏著劑之形成的黏著劑組成物,和使用該黏著劑組成物之半導體裝置之製造方法。 Patent Document 1 discloses an adhesive composition for use in attachment of a semiconductor wafer, polishing of a wafer back surface, and formation of a film-like adhesive during flip chip bonding, and use of the adhesive composition A method of manufacturing a semiconductor device.

又,於專利文獻2中,揭示有適用於製造使用貫通電極之CHIP-ON-CHIP構造之半導體裝置時之半導體裝置之製造方法。更詳細而言,揭示有包含於半導體基板之第1面上,覆晶安裝半導體晶片之工程、和於前述半導體基板之第1面上,以被覆前述半導體晶片之狀態,經由樹脂成形,形成絕緣性支持體的工程、和於前述半導體 基板之第2面側,施以特定之處理的工程、和從前述半導體基板伴隨前述絕緣性支持體,切出晶片,單片化的工程之半導體裝置之製造方法。 Further, Patent Document 2 discloses a method of manufacturing a semiconductor device which is suitable for use in manufacturing a semiconductor device having a CHIP-ON-CHIP structure using a through electrode. More specifically, it is disclosed that the semiconductor wafer is mounted on the first surface of the semiconductor substrate, and the semiconductor wafer is mounted on the first surface of the semiconductor substrate, and the semiconductor wafer is covered with the semiconductor wafer. Engineering of the sexual support, and the aforementioned semiconductor On the second surface side of the substrate, a process for specifying a process, and a method of manufacturing a semiconductor device in which a semiconductor wafer is cut out from the semiconductor substrate and the wafer is diced is used.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2011-146731號公報(2011年7月28日公開) [Patent Document 1] Japanese Laid-Open Patent Publication No. 2011-146731 (published on July 28, 2011)

[專利文獻2]日本特開2008-130704號公報(2008年6月5日公開) [Patent Document 2] Japanese Laid-Open Patent Publication No. 2008-130704 (published on June 5, 2008)

本發明人等係為進行覆晶安裝,先行將第一支持體、第一之黏著劑層、晶圓基板、第二之黏著劑層及第二支持體以此順序層積形成之層積體的技術,獨立加以檢討。即,首先,於第一之支持體上,隔著第一之黏著劑層,貼合晶圓基板,研磨晶圓基板而加以薄化。之後,於晶圓基板之被研磨之面,隔著第二之黏著劑層,貼合第二之支持體,形成上述層積體。然後,檢討從該層積體分離第一之支持體,使用殘留之部分,進行覆晶安裝。 The inventors of the present invention are the laminates in which the first support, the first adhesive layer, the wafer substrate, the second adhesive layer, and the second support are laminated in this order for flip chip mounting. The technology is independently reviewed. That is, first, the wafer substrate is bonded to the first support via the first adhesive layer, and the wafer substrate is polished and thinned. Thereafter, the second support is bonded to the surface to be polished of the wafer substrate via the second adhesive layer to form the laminate. Then, it is reviewed that the first support is separated from the laminate, and the remaining portion is used for flip chip mounting.

在此,於從該層積體分離第一支持體時,使用溶劑,溶解第一之黏著劑層時,亦會溶解黏著第二支持 體之第二之黏著劑層,會有同時分離第二支持體的疑慮之問題。 Here, when the first support is separated from the laminate, a solvent is used to dissolve the first adhesive layer, and the second support is also dissolved. The second adhesive layer of the body has the problem of separating the second support at the same time.

本發明係有鑑於上述問題,為提供經由形成使第一支持體、第一之黏著劑層、晶圓基板、第二之黏著劑層及第二支持體以此順序層積所成層積體,於處理基板時,從層積體不會分離第二支持體,可使第一支持體從首至尾加以分離之技術為主要目的。 The present invention has been made in view of the above problems, and provides a laminate in which the first support, the first adhesive layer, the wafer substrate, the second adhesive layer, and the second support are laminated in this order. When the substrate is processed, the second support is not separated from the laminate, and the first support is separated from the first to the last.

為解決上述課題,關於本發明之處理方法係包含於設有設置經由光之照射而變質之分離層之第一之該分離層之面,隔著第一之黏著劑層,貼附基板的第一貼附工程、和第一貼附工程之後,在背向於貼附上述基板之第一支持體面之面,隔著第二之黏著劑層,貼附第二支持體的第二貼附工程、和第二貼附工程之後,於上述分離層經由照射光線,變質該分離層,分離第一支持體與基板之分離工程為特徵。 In order to solve the above problems, the processing method of the present invention includes a surface on which the first separation layer of the separation layer which is modified by irradiation of light is provided, and the substrate is attached via the first adhesive layer. After the attachment process and the first attachment process, the second attachment of the second support is attached to the surface of the first support surface facing the substrate, with the second adhesive layer interposed therebetween And after the second attachment process, the separation layer is characterized by the irradiation of the light, the separation layer is separated, and the separation of the first support from the substrate is characterized.

根據本發明時,自第一支持體、第一之黏著劑層、晶圓基板、第二之黏著劑層及第二支持體以此順序層積所成層積體,可不分離第二支持體,使第一支持體從首至尾加以分離。 According to the present invention, the layered body is laminated in this order from the first support, the first adhesive layer, the wafer substrate, the second adhesive layer, and the second support, so that the second support is not separated. The first support is separated from beginning to end.

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧第一之黏著劑層 12‧‧‧First adhesive layer

13‧‧‧第一支援板(第一支持體) 13‧‧‧First Support Board (First Support)

14‧‧‧分離層 14‧‧‧Separation layer

22‧‧‧第二之黏著劑層 22‧‧‧Second Adhesive Layer

23‧‧‧第二支援板(第二支持體) 23‧‧‧Second support board (second support)

100‧‧‧層積體 100‧‧‧Layer

[圖1]說明關於本發明之一實施形態之處理方法所包含之第一之黏著劑層之以至於外周部分被除去之工程之概略圖。 Fig. 1 is a schematic view showing a process of removing the first adhesive layer included in the treatment method according to the embodiment of the present invention, so that the outer peripheral portion is removed.

[圖2]說明關於本發明之一實施形態之處理方法所包含之第一之黏著劑層之較外周部分被除去後之工程之概略圖。 Fig. 2 is a schematic view showing a process in which the outer peripheral portion of the first adhesive layer included in the treatment method according to the embodiment of the present invention is removed.

[圖3]說明關於本發明之一實施形態之處理方法所形成之層積體之概略圖。 Fig. 3 is a schematic view showing a laminate formed by a processing method according to an embodiment of the present invention.

[圖4]說明關於本發明之一實施形態之處理方法所包含之分離工程之概略圖。 Fig. 4 is a schematic view showing a separation process included in a processing method according to an embodiment of the present invention.

關於本發明之處理方法係包含於設有設置經由光之照射變質之分離層之第一之該分離層之面,隔著第一之黏著劑層,貼附基板的第一貼附工程、和第一貼附工程之後,在背向於貼附上述基板之第一支持體面之面,隔著第二之黏著劑層,貼附第二支持體的第二貼附工程、和第二貼附工程之後,於上述分離層經由照射光線,變質該分離層,分離第一支持體與基板之分離工程。 The processing method of the present invention is included in a surface of the separation layer provided with the first separation layer provided by the irradiation of light, and a first attachment process for attaching the substrate via the first adhesive layer, and After the first attachment process, a second attachment process to which the second support is attached, and a second attachment are attached to the surface of the first support surface facing the substrate, with the second adhesive layer interposed therebetween After the process, the separation layer is transformed by the irradiation light, and the separation process of the first support and the substrate is separated.

由此,自第一支持體、第一之黏著劑層、晶圓基板、第二之黏著劑層及第二支持體以此順序層積所成層積體,可不分離第二支持體,使第一支持體從首至尾加 以分離。 Thereby, the layered body is laminated in this order from the first support, the first adhesive layer, the wafer substrate, the second adhesive layer, and the second support, so that the second support can be separated without a support from beginning to end To separate.

即,根據本發明時,於分離層,經由照射光線,變質該分離層,分離第一支持體與基板之故,不會溶解第二之黏著劑層、亦不會對於第二之黏著劑層施加過大之力量下,可分離第一支持體與基板。為此,將第一支持體從層積體分離之時,可防止第二支持體從基板分離。 That is, according to the present invention, in the separation layer, the separation layer is deteriorated by irradiation of light, and the first support and the substrate are separated, and the second adhesive layer is not dissolved, and the second adhesive layer is not dissolved. The first support and the substrate can be separated by applying excessive force. For this reason, when the first support is separated from the laminate, the second support can be prevented from being separated from the substrate.

因此,關於本發明之處理方法中,在關於本發明之處理方法之後的工程中,可於基板適切進行覆晶安裝。 Therefore, in the processing method of the present invention, in the process after the processing method of the present invention, flip chip mounting can be performed on the substrate as appropriate.

[處理方法] [Approach]

使用圖1~圖4,對於關於本發明之一實施形態之處理方法,更詳細加以說明。圖1係說明關於本發明之一實施形態之處理方法所包含之黏著劑層之以至於外周部分除去工程2之概略圖。圖2係說明關於本發明之一實施形態之處理方法所包含之黏著劑層之較外周部分除去工程2之後之工程的概略圖。 The processing method according to an embodiment of the present invention will be described in more detail with reference to Figs. 1 to 4 . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an adhesive layer included in a treatment method according to an embodiment of the present invention, and a peripheral portion removing process 2. Fig. 2 is a schematic view showing a process after the outer peripheral portion removal process 2 of the adhesive layer included in the treatment method according to the embodiment of the present invention.

如圖1所示,有關一實施形態之處理方法係包含第一之黏著劑塗佈工程(圖1之(a)及(b))、黏著劑之外周部分除去工程1(圖1之(c))、第一分離層形成工程(圖1之(d)及(e))、第一貼附工程(圖1之(f))、及黏著劑層之外周部分除去工程2(圖1之(g))。 As shown in Fig. 1, the treatment method relating to one embodiment includes a first adhesive coating process (Fig. 1 (a) and (b)), and an adhesive peripheral peripheral removal process 1 (Fig. 1 (c). )), the first separation layer forming process ((d) and (e) of Fig. 1), the first attachment process (Fig. 1 (f)), and the outer peripheral part of the adhesive layer removal process 2 (Fig. 1 (g)).

又,如圖2所示,有關一實施形態之處理方 法係除了圖1之(a)~(g)所示之工程,包含薄化工程(圖2之(a))、第二之黏著劑塗佈工程(圖2之(b))、黏著劑之外周部分除去工程3(圖2之(c))、第二分離層形成工程(圖2之(d)及(e))、第二貼附工程(圖2之(f))、及黏著劑層之外周部分除去工程4(圖2之(g))。 Moreover, as shown in FIG. 2, the processing side of an embodiment In addition to the works shown in (a) to (g) of Figure 1, the system includes a thinning project (Fig. 2 (a)), a second adhesive coating project (Fig. 2 (b)), and an adhesive. The outer peripheral part is removed from the work 3 (Fig. 2 (c)), the second separated layer forming work (Fig. 2 (d) and (e)), the second attached work (Fig. 2 (f)), and the adhesion The outer peripheral portion of the agent layer is removed from the work 4 ((g) of Fig. 2).

如圖1及圖2所示,關於一實施形態之處理方法係包含於設置經由光之照射變質之分離層14之第一支援板(第一支持體)13之分離層14之面,隔著第一之黏著劑層12,貼附基板11的第一貼附工程、和第一貼附工程之後,在背向於貼附基板11之第一支援板13面之面,隔著第二之黏著劑層22,貼附第二支援板(第二支持體)23之第二貼附工程、和第二貼附工程後,於分離層14經由照射光線,使分離層14變質,分離第一支援板13與基板11之分離工程。 As shown in FIG. 1 and FIG. 2, the processing method according to an embodiment is included in the surface of the separation layer 14 of the first support plate (first support) 13 which is provided with the separation layer 14 which is modified by the irradiation of light, and is interposed. The first adhesive layer 12, the first attachment process to which the substrate 11 is attached, and the first attachment process are placed on the surface of the first support plate 13 facing away from the substrate 11 with the second surface interposed therebetween. After the adhesive layer 22 is attached to the second attachment process of the second support plate (second support) 23 and the second attachment process, the separation layer 14 is deteriorated by the irradiation light on the separation layer 14 to separate the first layer. The separation of the support plate 13 from the substrate 11 is performed.

[第一之黏著劑塗佈工程] [First Adhesive Coating Engineering]

關於一實施形態之處理方法中,包含於第一貼附工程之前,於第一支援板13及基板11之至少一方,塗佈黏著劑,形成第一之黏著劑層12的第一之黏著劑塗佈工程。 In the processing method according to the embodiment, the first adhesive agent is applied to at least one of the first support plate 13 and the substrate 11 to form the first adhesive of the first adhesive layer 12 before the first attachment process. Coating engineering.

由此,可將基板11固定於第一支援板13。因此,於後之工程中,可防止基板11之破損。 Thereby, the substrate 11 can be fixed to the first support plate 13. Therefore, in the subsequent work, the damage of the substrate 11 can be prevented.

首先,如圖1之(a)及(b)所示,於形成基板11之電路之面,塗佈第一之黏著劑,形成第一之黏 著劑層12。做為對基板11之第一之黏著劑之塗佈方法,雖未特別加以限定,可列舉旋塗法、浸漬法、滾筒刀法、噴霧法、縫隙塗佈等之方法。然而,於本實施形態中,雖於基板11形成第一之黏著劑層12,但非限定於此,在形成於第一支援板13之分離層14上,塗佈第一之黏著劑,形成第一之黏著劑層12亦可。 First, as shown in (a) and (b) of FIG. 1, the first adhesive is applied to the surface of the circuit on which the substrate 11 is formed to form the first adhesive. The agent layer 12. The method of applying the first adhesive to the substrate 11 is not particularly limited, and examples thereof include a spin coating method, a dipping method, a roll knife method, a spray method, and a slit coating method. However, in the present embodiment, the first adhesive layer 12 is formed on the substrate 11, but the present invention is not limited thereto, and the first adhesive is applied to the separation layer 14 formed on the first support plate 13 to form a first adhesive. The first adhesive layer 12 can also be used.

(基板11) (substrate 11)

基板11係隔著第一之黏著劑層12,貼附於第一支援板13,隔著第二之黏著劑層22,貼附於第二支援板23。做為基板11,例如可使用晶圓基板、陶瓷基板、淺薄之薄膜基板、可撓性基板等之任意基板。又,於一實施形態中,於層積基板11之第一之黏著劑層12側之面,則形成有電路。 The substrate 11 is attached to the first support plate 13 via the first adhesive layer 12, and is attached to the second support plate 23 via the second adhesive layer 22. As the substrate 11, for example, any substrate such as a wafer substrate, a ceramic substrate, a shallow film substrate, or a flexible substrate can be used. Further, in one embodiment, an electric circuit is formed on the surface of the first adhesive layer 12 on the laminated substrate 11.

(第一之黏著劑層12) (first adhesive layer 12)

第一之黏著劑層12係將基板11,對於第一支援板13及分離層14,黏著加以固定者。又,第一之黏著劑層12係可為被覆基板11之表面加以保護者。 The first adhesive layer 12 is a substrate 11 to which the first support plate 13 and the separation layer 14 are adhered and fixed. Further, the first adhesive layer 12 can protect the surface of the coated substrate 11.

做為第一之黏著劑層12之形成方法,可於基板11塗佈黏著劑,亦可於基板11貼附黏著劑被塗佈於兩面之黏著膠帶。做為黏著劑之塗佈方法,雖未特別加以限定,可列舉旋塗法、浸漬法、滾筒刀法、醫刀法、噴霧法、縫隙噴嘴法所成之塗佈法等。又,塗佈黏著劑之後, 經由加熱進行乾燥亦可。又,代替將黏著劑直接塗佈於基板11,將黏著劑預先塗佈於兩面之薄膜(所謂兩面膠帶),貼附於基板11亦可。 As a method of forming the first adhesive layer 12, an adhesive may be applied to the substrate 11, or an adhesive tape to which the adhesive is applied to both surfaces may be attached to the substrate 11. The coating method of the adhesive is not particularly limited, and examples thereof include a spin coating method, a dipping method, a roller knife method, a doctor blade method, a spray method, and a slit nozzle method. Also, after applying the adhesive, Drying by heating is also possible. Further, instead of applying the adhesive directly to the substrate 11, the adhesive may be applied to the film on both sides (so-called double-sided tape) in advance, and may be attached to the substrate 11.

第一之黏著劑層12之厚度,係對應於貼附之對象的基板11及第一支援板13之種類,施於貼附後之基板11之處理等,適切加以設定即可,但較佳為10~150μm之範圍內,更佳為15~100μm之範圍內。 The thickness of the first adhesive layer 12 may be set according to the type of the substrate 11 and the first support plate 13 to be attached, and the substrate 11 to be attached, and the like may be appropriately set. It is in the range of 10 to 150 μm, more preferably in the range of 15 to 100 μm.

做為黏著劑,例如丙烯酸系、酚醛系、萘醌系、碳化氫系、聚醯亞胺系、彈性體等之該領域中公知之種種之黏著劑,可做為構成關於本發明之第一之黏著劑層12之黏著劑使用。以下,對於含有本實施之形態之第一之黏著劑層12之樹脂之組成加以說明。 As the adhesive, various adhesives known in the art such as acrylic, phenolic, naphthoquinone, hydrocarbon, polyimide, elastomer, etc. can be used as the first composition of the present invention. The adhesive of the adhesive layer 12 is used. Hereinafter, the composition of the resin containing the first adhesive layer 12 of the embodiment of the present embodiment will be described.

做為含有第一之黏著劑層12之樹脂,具備黏著性者即可,例如可列舉碳化氫樹脂、丙烯酸-苯乙烯系樹脂、馬來亞醯胺系樹脂、彈性體樹脂等,或此等組合者等。 The resin containing the first adhesive layer 12 may be an adhesive, and examples thereof include a hydrocarbon resin, an acrylic-styrene resin, a maleic amine resin, an elastomer resin, and the like. Combiners and so on.

黏著劑之玻璃轉移溫度(Tg)係會由於上述樹脂之種類或分子量、及黏著劑之可塑劑等之配合物而變化。含於上述黏著劑之樹脂之種類或分子量,雖可對應基板及支持體之種類適切加以選擇,使用於黏著劑之樹脂之Tg係較佳為-60℃以上,200℃以下之範圍內,更佳為-25℃以上、150℃以下之範圍內。藉由-25℃以上、150℃以下之範圍內,對於冷卻無需過多之能量,可適切使第一之黏著劑層12之黏著力下降。又,第一之黏著劑層12之 Tg係可適切配合可塑劑或低聚合之樹脂等加以調整。 The glass transition temperature (Tg) of the adhesive varies depending on the type or molecular weight of the above-mentioned resin, and the complex of the plasticizer of the adhesive. The type or molecular weight of the resin to be contained in the above-mentioned adhesive may be appropriately selected depending on the type of the substrate and the support, and the Tg of the resin used in the adhesive is preferably -60 ° C or more and 200 ° C or less. It is preferably in the range of -25 ° C or more and 150 ° C or less. By the range of -25 ° C or more and 150 ° C or less, the adhesion of the first adhesive layer 12 can be appropriately reduced without requiring excessive energy for cooling. Also, the first adhesive layer 12 The Tg system can be adjusted in accordance with a plasticizer or a low-polymerization resin.

玻璃轉移溫度(Tg)係例如可使用公知之差示掃描熱量測定裝置(DSC)加以測定。 The glass transition temperature (Tg) can be measured, for example, using a well-known differential scanning calorimeter (DSC).

(碳化氫樹脂) (hydrocarbon resin)

碳化氫樹脂係具有碳化氫骨架,聚合單量體組成物所成之樹脂。做為碳化氫樹脂,雖可列舉選自環烯烴系聚合物(以下稱之為「樹脂(A)」)以及萜烯樹脂、松脂系樹脂及石油樹脂所成群之至少一種的樹脂(以下稱之為「樹脂(B)」)等,但非限定於此。 The hydrocarbon resin has a hydrocarbon skeleton and is a resin obtained by polymerizing a monolith composition. Examples of the hydrocarbon resin include a resin selected from the group consisting of a cycloolefin polymer (hereinafter referred to as "resin (A)") and a terpene resin, a rosin resin, and a petroleum resin (hereinafter referred to as "a resin"). It is "resin (B)"), etc., but it is not limited to this.

做為樹脂(A),可為聚合含環烯烴系單體之單量體成分所成樹脂。具體而言,可列舉含環烯烴系單體之單量體成分之開環(共)聚合物、附加(共)聚合含環烯烴系單體之單量體成分之樹脂等。 The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin-based monomer. Specifically, a ring-opening (co)polymer containing a monomer component of a cycloolefin type monomer, and a resin which adds (co)polymerizes a monomer component of a cycloolefin type monomer, etc. are mentioned.

做為含於構成樹脂(A)之單量體成分的前述 環烯烴系單體,例如可列舉降冰片烯、降冰片二烯等之二環體、二環戊二烯、二氫氧基戊二烯等之三環體、四環十二碳烯等之四環體、環戊二烯三量體等之五環體、四環戊二烯等之七環體;或此等多環體之烷基(甲基、乙基、丙基、丁基等)置換體、烯基(乙烯基等)置換體、亞烷基(亞乙基等)置換體、芳基(苯基、甲苯基、萘基等)置換體等。此等之中,尤以降冰片烯、四環十二碳烯或選自此等之烷基置換體所成群之降冰片烯系單體為佳。 As the above-mentioned one-component body component constituting the resin (A) Examples of the cycloolefin-based monomer include a bicyclic ring such as norbornene and norbornadiene, a tricyclic ring such as dicyclopentadiene or dihydrooxypentadiene, and tetracyclododecene. a heptacyclic ring such as a tetracycline or a cyclopentadiene triad or a heptacycline such as tetracyclopentadiene; or an alkyl group of such a polycyclic ring (methyl, ethyl, propyl, butyl, etc.) a substitution body, an alkenyl group (vinyl group, etc.) substitution product, an alkylene group (such as an ethylene group), a aryl group (phenyl group, a tolyl group, a naphthyl group, etc.), or the like. Among these, a norbornene-based monomer in which a group of norbornene, tetracyclododecene or an alkyl group-substituted body selected from the group is preferable is preferable.

構成樹脂(A)之單體成分係含有可與上述環 烯烴系單體共聚合之其他之單體亦可,例如含有烯烴單體者為佳。做為烯烴單體,例如可列舉乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。烯烴單體可為直鏈狀,亦可為分支鏈狀。 The monomer component constituting the resin (A) contains a ring which can be combined with the above ring Other monomers in which the olefin monomer is copolymerized may also be preferred, for example, those containing an olefin monomer. Examples of the olefin monomer include ethylene, propylene, 1-butene, isobutylene, 1-hexene, and α-olefin. The olefin monomer may be linear or branched.

又,做為構成樹脂(A)之單量體成分,含有 環烯烴單體由高耐熱性(低熱分解、熱重量減少性)之觀點視之為佳。對於構成樹脂(A)之單量體成分整體之環烯烴單體之比例係5莫耳%以上為佳,更佳為10莫耳%以上,更佳為20莫耳%以上。又,對於構成樹脂(A)之單量體成分整體之環烯烴單體之比例係雖未特別加以限定,從溶解性及溶液之歷時安定性之觀點視之,較佳為80莫耳%以下,更佳為70莫耳%以下。 Moreover, it is contained as a single component of the resin (A). The cycloolefin monomer is preferably from the viewpoint of high heat resistance (low thermal decomposition, thermal weight reduction). The ratio of the cycloolefin monomer which constitutes the entire single component of the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and still more preferably 20 mol% or more. In addition, the ratio of the cycloolefin monomer which constitutes the entire single component of the resin (A) is not particularly limited, and is preferably 80 mol% or less from the viewpoint of solubility and stability of the solution. More preferably, it is 70% or less.

又,做為構成樹脂(A)之單量體成分,含有 直鏈狀或分支鏈狀之烯烴單體亦可。對於構成樹脂(A)之單量體成分整體之環烯烴單體之比例係從溶解性及柔軟性之觀點視之,10~90莫耳%為佳,較佳為20~85莫耳%,更佳為30~80莫耳%。 Moreover, it is contained as a single component of the resin (A). A linear or branched olefin monomer may also be used. The ratio of the cycloolefin monomer which constitutes the monolithic component of the resin (A) as a whole is preferably from 10 to 90 mol%, preferably from 20 to 85 mol%, from the viewpoint of solubility and flexibility. More preferably 30 to 80% by mole.

然而,樹脂(A)係如聚合環烯烴系單體與烯 烴單體所成單量體成分所成樹脂,雖為不具有極性基之樹脂,在高溫下抑制氣體之產生的部分為佳。 However, the resin (A) is, for example, a polymerized cycloolefin monomer and an alkene. The resin formed by the monomer component of the hydrocarbon monomer is preferably a resin which does not have a polar group and which suppresses the generation of gas at a high temperature.

對於聚合單量體成分時之聚合方法或聚合條 件等,未特別加以限制,可依常用方法適切加以設定。 A polymerization method or a polymerization strip for polymerizing a single body component The parts and the like are not particularly limited and can be appropriately set according to a usual method.

可做為樹脂(A)使用之市售品,例如可列舉 polyplastics股份有限公司製「TOPAS」、三井化學股份 有限公司製「APEL」、日本ZEON股份有限公司製之「ZEONOR」及「ZEONEX」、JSR股份有限公司製之「ARTON」等。 It can be used as a commercial product for the resin (A), for example, Polyplastics Co., Ltd. "TOPAS", Mitsui Chemicals "APEL" manufactured by the company, "ZEONOR" and "ZEONEX" manufactured by Japan ZEON Co., Ltd., and "ARTON" manufactured by JSR Co., Ltd.

樹脂(A)之玻璃轉移溫度(Tg)係、60℃以上為佳,70℃以上者更佳。樹脂(A)之玻璃轉移溫度為60℃以上之時,層積體曝露於高溫環境時,更可抑制第一之黏著劑層之軟化。 The glass transition temperature (Tg) of the resin (A) is preferably 60 ° C or higher, and more preferably 70 ° C or higher. When the glass transition temperature of the resin (A) is 60 ° C or more, when the laminate is exposed to a high temperature environment, the softening of the first adhesive layer can be further suppressed.

樹脂(B)係選自萜烯系樹脂、松脂系樹脂及石油樹脂所成群之至少一種的樹脂。具體而言,做為萜烯系樹脂、例如可列舉萜烯樹脂、萜烯苯酚樹脂、改性萜烯樹脂、氫化萜烯樹脂、氫化萜烯苯酚樹脂等。做為松脂系樹脂、例如可列舉松脂、松脂酯、氫化松脂、氫化松脂酯、聚合松脂、聚合松脂酯、改性松脂等。做為石油樹脂,例如可列舉脂肪族或芳香族石油樹脂、氫化石油樹脂、改性石油樹脂、脂環族石油樹脂、苯并呋喃-茚石油樹脂等。其中,更佳為氫化萜烯樹脂、氫化石油樹脂。 The resin (B) is a resin selected from at least one of a group consisting of a terpene resin, a rosin resin, and a petroleum resin. Specifically, examples of the terpene-based resin include a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, and a hydrogenated terpene phenol resin. Examples of the rosin-based resin include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of the petroleum resin include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, benzofuran-indene petroleum resins, and the like. Among them, a hydrogenated terpene resin and a hydrogenated petroleum resin are more preferable.

樹脂(B)之軟化點,係雖未特別加以限定,80~160℃為佳。樹脂(B)之軟化點為80℃以上之時,層積體曝露於高溫環境時,更可抑制軟化,不會產生黏著不良。另一方面,樹脂(B)之軟化點為160℃以下時,剝離層積體時之剝離速度會變得良好。 The softening point of the resin (B) is not particularly limited, and is preferably 80 to 160 °C. When the softening point of the resin (B) is 80 ° C or more, when the laminate is exposed to a high temperature environment, softening can be suppressed, and adhesion failure does not occur. On the other hand, when the softening point of the resin (B) is 160 ° C or less, the peeling speed at the time of peeling the laminated body becomes favorable.

樹脂(B)之重量平均分子量雖未特別加以限定,300~3000者為佳。樹脂(B)之重量平均分子量為300以上時,耐熱性則為充分,於高溫環境下,脫氣量會 變少。另一方面,樹脂(B)之重量平均分子量為3000以下時,剝離層積體時之剝離速度會變得良好。然而,本實施形態之樹脂(B)之重量平均分子量係意味凝膠滲透層析儀(GPC)所測定之聚苯乙烯換算之分子量。 The weight average molecular weight of the resin (B) is not particularly limited, and is preferably from 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, heat resistance is sufficient, and in a high temperature environment, the amount of outgassing will be Fewer. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the peeling speed at the time of peeling the laminated body becomes favorable. However, the weight average molecular weight of the resin (B) of the present embodiment means a polystyrene-equivalent molecular weight measured by a gel permeation chromatography (GPC).

然而,做為樹脂,使用混合樹脂(A)與樹脂(B)者亦可。經由混合,耐熱性及剝離速度會變得良好。例如,做為樹脂(A)與樹脂(B)之混合比例,為(A):(B)=80:20~55:45(質量比),在於剝離速度、高溫環境時之耐熱性及柔軟性為優異之故為佳。 However, as the resin, it is also possible to use the mixed resin (A) and the resin (B). Through mixing, heat resistance and peeling speed become good. For example, the mixing ratio of the resin (A) and the resin (B) is (A): (B) = 80: 20 to 55: 45 (mass ratio), and is heat resistance and softness at a peeling speed and a high temperature environment. It is better for sex to be excellent.

(丙烯酸-苯乙烯系樹脂) (acrylic-styrene resin)

做為丙烯酸-苯乙烯系樹脂,係例如可列舉將苯乙烯或苯乙烯之衍生物、和(甲基)丙烯酸酯等為單量體使用而聚合之樹脂。 Examples of the acrylic-styrene-based resin include a resin obtained by polymerizing a derivative of styrene or styrene, and a (meth) acrylate.

做為(甲基)丙烯酸酯,例如可列舉鏈式構造所成(甲基)丙烯酸烷基酯、具有脂肪族環之(甲基)丙烯酸酯、具有芳香族環之(甲基)丙烯酸酯。做為鏈式構造所成(甲基)丙烯酸烷基酯,例如可列舉具有碳數15~20之烷基的丙烯酸系長鏈烷基酯、具有碳數1~14之烷基的丙烯酸系烷基酯等。做為丙烯酸系長鏈烷基酯,可列舉烷基為n-十五烷基、n-十六烷基、n-十七烷基、n-十八烷基、n-十九烷基、n-二十烷基等之丙烯酸或甲基丙烯酸之烷基酯。然而,該烷基可為分支狀。 Examples of the (meth) acrylate include a (meth)acrylic acid alkyl ester, a (cyclo)alkyl group having an aliphatic ring, and a (meth) acrylate having an aromatic ring. Examples of the (meth)acrylic acid alkyl ester to be a chain structure include an acrylic long-chain alkyl ester having an alkyl group having 15 to 20 carbon atoms, and an acrylic alkyl group having an alkyl group having 1 to 14 carbon atoms. Base ester and the like. As the acrylic long-chain alkyl ester, the alkyl group is n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, An alkyl ester of acrylic acid or methacrylic acid such as n-eicosyl group. However, the alkyl group may be branched.

做為具有碳數1~14之烷基的丙烯酸系烷基 酯,可列舉使用於已存在之丙烯酸系黏著劑之公知之丙烯酸系烷基酯。例如,烷基係可列舉甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異十烷基、十二烷基、月桂基、十三烷基等所成丙烯酸或甲基丙烯酸之烷基酯。 An acrylic alkyl group having an alkyl group having 1 to 14 carbon atoms The ester may, for example, be a known acrylic alkyl ester used in an existing acrylic pressure-sensitive adhesive. For example, the alkyl group may, for example, be methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isodecyl, isodecyl, dodecyl, lauryl or tridecyl. An alkyl ester of acrylic acid or methacrylic acid.

做為具有脂肪族環之(甲基)丙烯酸酯,可列舉環己基(甲基)丙烯酸酯、環戊基(甲基)丙烯酸酯、1-金剛烷基(甲基)丙烯酸酯、降冰片烷基(甲基)丙烯酸酯、異冰片烷基(甲基)丙烯酸酯、三環癸烯基(甲基)丙烯酸酯、四環癸烯基(甲基)丙烯酸酯、二環戊基(甲基)丙烯酸酯等,更佳為異冰片烷基甲基丙烯酸酯、二環戊基(甲基)丙烯酸酯。 Examples of the (meth) acrylate having an aliphatic ring include cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, 1-adamantyl (meth) acrylate, and norbornane. (meth) acrylate, isobornyl alkyl (meth) acrylate, tricyclodecenyl (meth) acrylate, tetracyclodecenyl (meth) acrylate, dicyclopentyl (methyl) An acrylate or the like is more preferably an isobornyl methacrylate or a dicyclopentyl (meth) acrylate.

做為具有芳香族環之(甲基)丙烯酸酯,雖未特別加以限定,做為芳香族環,例如可列舉苯基、苄基、甲苯基、二甲苯基、雙苯基、萘基、蒽基、苯氧甲基、苯氧乙基等。又,芳香族環係可具有碳數1~5之鏈狀或分支狀之烷基。具體而言,以苯氧乙基丙烯酸酯為佳。 The (meth) acrylate having an aromatic ring is not particularly limited, and examples of the aromatic ring include a phenyl group, a benzyl group, a tolyl group, a xylyl group, a bisphenyl group, a naphthyl group, and an anthracene. Base, phenoxymethyl, phenoxyethyl and the like. Further, the aromatic ring system may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.

(馬來亞醯胺系樹脂) (Malayian amide resin)

做為馬來亞醯胺系樹脂,例如做為單量體,可列舉聚合N-甲基馬來亞醯胺、N-乙基馬來亞醯胺、N-n-丙基馬來亞醯胺、N-異丙基馬來亞醯胺、N-n-丁基馬來亞醯胺、N-異丁基馬來亞醯胺、N-sec-丁基馬來亞醯胺、N-tert-丁 基馬來亞醯胺、N-n-戊基馬來亞醯胺、N-n-己基馬來亞醯胺、N-n-庚基馬來亞醯胺、N-n-辛基馬來亞醯胺、N-十二烷基馬來亞醯胺、N-十八烷基馬來亞醯胺等之具有烷基之馬來亞醯胺、N-環丙基馬來亞醯胺、N-環丁基馬來亞醯胺、N-環戊基馬來亞醯胺、N-環己基馬來亞醯胺、N-環庚基馬來亞醯胺、N-環辛基馬來亞醯胺等之具有脂肪族碳化氫基之馬來亞醯胺、N-苯基馬來亞醯胺、N-m-甲基苯基馬來亞醯胺、N-o-甲基苯基馬來亞醯胺、N-p-甲基苯基馬來亞醯胺等之具有芳基之芳香族馬來亞醯胺等所得之樹脂。 As the maleic amine-based resin, for example, as a monomer, a polymerization of N-methyl maleimide, N-ethyl maleimide, Nn-propyl maleimide, N-isopropylmaleimide, Nn-butylmaleimide, N-isobutylmaleimide, N-sec-butylmaleimide, N-tert-butyl Kamalimide, Nn-pentylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide, N-twelve An alkyl maleimide, an N-octadecyl maleimide or the like having an alkyl group, a maleimide, an N-cyclopropyl maleimide, an N-cyclobutyl mala Anthracene, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, etc. Hydrocarbon-based maleimide, N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenyl A resin obtained by aromatic arylamine or the like having an aryl group such as melamine.

例如,可將下述化學式(1)所示之重覆單位及下述化學式(2)所示重覆單位之共聚合物之環烯烴寡聚物,做為黏著成分之樹脂加以使用。 For example, a repeating unit represented by the following chemical formula (1) and a cyclic olefin oligomer of a repeating unit of the following chemical formula (2) can be used as a resin of an adhesive component.

(化學式(2)中,n係0或1~3之整數)。 (In the chemical formula (2), n is 0 or an integer of 1 to 3).

做為如此環烯烴寡聚物,可使用APL 8008T、APL 8009T、及APL 6013T(所有為三井化學股份有限公司製)等。 As such a cyclic olefin oligomer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals, Inc.) and the like can be used.

(彈性體) (elastomer)

彈性體係做為主鏈之構成單位包含苯乙烯單位者為佳,該「苯乙烯單位」係具有置換基亦可。做為置換基,例如可列舉碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧烷基、乙醯氧基、羧酸基等。又,該苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內為更佳。更且,彈性體係重量平均分子量為10,000以上、200,000以下之範圍內為佳。 It is preferable that the elastic system is composed of a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent group. Examples of the substituent group include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an ethoxylated group, and a carboxylic acid group. Further, the content of the styrene unit is more preferably in the range of 14% by weight or more and 50% by weight or less. Further, the weight average molecular weight of the elastic system is preferably in the range of 10,000 or more and 200,000 or less.

苯乙烯單位之含量在14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內時,容易溶解於後述碳化氫系之溶劑之故,可更容易且迅速除去第一之黏著劑層。又,苯乙烯單位之含量及重量平均分子量經由上述之範圍內,對於晶圓供予光阻微縮術工程時所曝露之抗蝕溶劑(例如PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH等)而言,可發揮優異之承受性。 When the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, it is easily dissolved in a solvent of a hydrocarbon-based solvent to be described later. The first adhesive layer is easily and quickly removed. Further, the content of the styrene unit and the weight average molecular weight are within the above range, and the resist solvent (for example, PGMEA, PGME, etc.), acid (hydrofluoric acid, etc.) exposed to the wafer during the photoresist reduction process, Alkali (TMAH, etc.) provides excellent durability.

然而,於彈性體,更混合上述(甲基)丙烯酸酯亦可。 However, in the elastomer, the above (meth) acrylate may be further mixed.

又,苯乙烯單位之含量為更佳為17重量%以上、又,更佳為40重量%以下。 Further, the content of the styrene unit is more preferably 17% by weight or more, still more preferably 40% by weight or less.

重量平均分子量之更佳範圍係20000以上,又,更佳之範圍係150000以下。 A more preferable range of the weight average molecular weight is 20,000 or more, and a more preferable range is 150,000 or less.

做為彈性體,苯乙烯單位之含量在14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內時,可使用種種之 彈性體。例如、可使用聚苯乙烯-聚(乙烯/丙烯)嵌段寡聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段寡聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段寡聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段寡聚物(SBBS)、及、此等氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段寡聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段寡聚物(苯乙烯-異戊二烯-苯乙烯嵌段寡聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段寡聚物(SEEPS)、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段寡聚物(SeptonV9461(kuraray股份有限公司製))、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段寡聚物(具有反應性之聚苯乙烯系硬嵌段、SeptonV9827(kuraray股份有限公司製))等、苯乙烯單位之含量及重量平均分子量為上述之範圍內者。 When the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, various types can be used. Elastomer. For example, polystyrene-poly(ethylene/propylene) block oligomer (SEP), styrene-isoprene-styrene block oligomer (SIS), styrene-butadiene-benzene can be used. Ethylene block oligomer (SBS), styrene-butadiene-butene-styrene block oligomer (SBBS), and, such hydride, styrene-ethylene-butylene-styrene block Oligomer (SEBS), styrene-ethylene-propylene-styrene block oligomer (styrene-isoprene-styrene block oligomer) (SEPS), styrene-ethylene-ethylene-propylene - styrene block oligomer (SEEPS), styrene block is a reaction crosslinked type styrene-ethylene-ethylene-propylene-styrene block oligomer (Septon V9461 (manufactured by Kuraray Co., Ltd.)), benzene The ethylene block is a reaction-crosslinked type styrene-ethylene-butylene-styrene block oligomer (reactive polystyrene-based hard block, Septon V9827 (manufactured by Kuraray Co., Ltd.), etc., styrene The content of the unit and the weight average molecular weight are within the above ranges.

又,彈性體之中,氫化物為更佳。為氫化物時,對於熱之安定性則提升,難以產生分解或聚合等之變質。又,從碳化氫系之溶劑之溶解性及抗蝕溶劑之承受性之觀點視之,亦更為優異。 Further, among the elastomers, a hydride is more preferable. When it is a hydride, the stability to heat is improved, and it is difficult to cause deterioration such as decomposition or polymerization. Moreover, it is more excellent from the viewpoint of the solubility of the solvent of the hydrocarbon-based solvent and the acceptability of the resist solvent.

又,彈性體之中,兩端為苯乙烯之嵌段聚合物者為更佳。經由將熱安定性高之苯乙烯,在兩末端加以嵌段,可顯示高耐熱性。 Further, among the elastomers, those having a block polymer of styrene at both ends are more preferable. High heat resistance can be exhibited by blocking styrene having high heat stability at both ends.

更具體而言,彈性體係苯乙烯及共軛二烯之嵌段寡聚物之氫化物者為更佳。對於熱之安定性則提升,難以產生分解或聚合等之變質。又,經由將熱安定性高之 苯乙烯,在兩末端加以嵌段,可顯示更高耐熱性。更且,從碳化氫系之溶劑之溶解性及抗蝕溶劑之承受性之觀點視之,亦更佳。 More specifically, the hydride of the elastomeric system styrene and the block oligomer of the conjugated diene is more preferred. The stability of heat is increased, and it is difficult to cause deterioration such as decomposition or polymerization. Also, by setting the heat to a high degree of stability Styrene, which is blocked at both ends, exhibits higher heat resistance. Furthermore, it is also preferable from the viewpoint of the solubility of the solvent of the hydrocarbon-based solvent and the acceptability of the resist solvent.

做為使用含於構成第一之黏著劑層12之黏著劑的彈性體所得市售品,例如可列舉kuraray股份有限公司製「septon(商品名)」、kuraray股份有限公司製「hybrar(商品名)」、旭化成股份有限公司製「tuftec(商品名)」、JSR股份有限公司製「DYNARON(商品名)」等。 For example, "septon (trade name)" manufactured by Kuraray Co., Ltd., "hybrar (trade name) manufactured by Kuraray Co., Ltd.) is used as a commercially available product of the elastomer to be used as the adhesive of the first adhesive layer 12. ), "Tuftec (trade name)" manufactured by Asahi Kasei Co., Ltd., "DYNARON (trade name)" manufactured by JSR Co., Ltd., etc.

做為含於構成第一之黏著劑層12之黏著劑的彈性體之含量,例如令黏著劑全量為100重量份,以50重量份以上,99重量份以下之範圍內為佳,以60重量份以上,99重量份以下之範圍內為更佳,以70重量份以上,95重量份以下之範圍內為最佳。經由成為如此範圍內,可維持耐熱性,適切貼合晶圓與支持體。 The content of the elastomer contained in the adhesive constituting the first adhesive layer 12 is, for example, 100 parts by weight or more, and preferably 90 parts by weight or less, and 60 parts by weight or less. It is more preferably in the range of 99 parts by weight or less, more preferably 70 parts by weight or more and 95 parts by weight or less. By being in such a range, heat resistance can be maintained, and the wafer and the support can be bonded to each other.

又,彈性體係可混合複數之種類。即,構成第一之黏著劑層12之黏著劑係可包含複數之種類之彈性體。複數之種類之彈性體中之至少一個,做為主鏈之構成單位,包含苯乙烯單位即可。又,複數之種類之彈性體中之至少一個,苯乙烯單位之含量在14重量%以上、50重量%以下之範圍內,又,重量平均分子量為10,000以上、200,000以下之範圍內時,即為本發明之範疇。又,構成第一之黏著劑層12之黏著劑中,包含複數之種類之彈性體時,混合之結果,苯乙烯單位之含量調整成上述範圍內 亦可。例如,將苯乙烯單位之含量為30重量%之kuraray股份有限公司製之septon(商品名)之Septon4033、和苯乙烯單位之含量為13重量%之septon(商品名)之Septon2063,以重量比1比1加以混合時,對於含於黏著劑組成物之彈性體整體之苯乙烯含量係成為21~22重量%,因此成為14重量%以上。又,例如將苯乙烯單位為10重量%者與60重量%者,以重量比1比1加以混合時,成為35重量%,成為上述之範圍內。本發明係可為如此之形態。又,關於本發明含於黏著劑組成物之複數之種類之彈性體,係所有在上述範圍內,含有苯乙烯單位,且為上述範圍內之重量平均分子量為最佳。 Also, the elastic system can mix a plurality of types. That is, the adhesive constituting the first adhesive layer 12 may contain a plurality of types of elastomers. At least one of the plurality of types of elastomers may be a constituent unit of the main chain, and may include a styrene unit. Further, at least one of the plurality of types of elastomers has a styrene unit content of 14% by weight or more and 50% by weight or less, and when the weight average molecular weight is in the range of 10,000 or more and 200,000 or less, The scope of the invention. Further, when the adhesive constituting the first adhesive layer 12 contains a plurality of types of elastomers, the content of the styrene unit is adjusted to the above range as a result of the mixing. Also. For example, Septon 4033 of septon (trade name) manufactured by Kuraray Co., Ltd. having a styrene unit content of 30% by weight, and Septon 2063 of septon (trade name) having a styrene unit content of 13% by weight, in a weight ratio of 1 When it is mixed with 1 , the styrene content of the entire elastomer contained in the adhesive composition is 21 to 22% by weight, and therefore it is 14% by weight or more. In addition, when the styrene unit is 10% by weight or 60% by weight, when it is mixed at a weight ratio of 1 to 1, it is 35% by weight, and it is within the above range. The invention may be in such a form. Further, the elastomers of the plural type of the adhesive composition of the present invention are all contained in the above range and contain styrene units, and the weight average molecular weight within the above range is optimal.

然而,使用光硬化性樹脂(例如UV硬化性樹脂)以外之樹脂,形成第一之黏著劑層12者為佳。經由使用光硬化性樹脂以外之樹脂,於第一之黏著劑層12之剝離或除去後,可防止在於被支持基板之微小凹凸之周邊殘留有殘渣。尤其,做為構成第一之黏著劑層12之黏著劑,非所有溶解於溶劑者,而是可溶解於特定之溶劑者為佳。此係可於基板11不外加物理上之力量,經由將第一之黏著劑層12溶解於溶劑而加以除去。第一黏著劑層12之除去時,即使強度下降之基板11,不會使基板11破損,變形地,可容易地除去第一之黏著劑層12。 However, it is preferred to form the first adhesive layer 12 using a resin other than a photocurable resin (for example, a UV curable resin). By using a resin other than the photocurable resin, after the first adhesive layer 12 is peeled off or removed, it is possible to prevent residues from remaining around the minute unevenness of the supported substrate. In particular, it is preferable that the adhesive constituting the first adhesive layer 12 is not dissolved in a solvent but dissolved in a specific solvent. This can be removed by adding the physical force to the substrate 11 by dissolving the first adhesive layer 12 in a solvent. When the first adhesive layer 12 is removed, even if the substrate 11 whose strength is lowered, the substrate 11 is not damaged, and the first adhesive layer 12 can be easily removed.

(稀釋溶劑) (diluted solvent)

做為形成分離層、第一之黏著劑層時之稀釋溶劑,係 例如可列舉己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀之碳化氫、碳數4至15之分支狀之碳化氫、例如環己烷、環庚烷、環辛烷、萘、十氫化萘、四氫化萘等之環狀碳化氫、p-薄荷烷、o-薄荷烷、m-薄荷烷、二苯基薄荷烷、1,4-萜二醇、1,8-萜二醇、莰烷、降冰片烷、蒎烷、側柏烷、蒈烷、長葉烯、香葉醇、橙花醇、芳樟醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-松油醇、β-松油醇、γ-松油醇、松油烯-1-醇、松油烯-4-醇、二氫松香醇醋酸酯、1,4-按醚、1,8-按醚、冰片、香旱芹酮、紫羅酮、側柏酮、樟腦、d-檸烯、l-檸烯、雙戊烯等之萜烯系溶劑;γ-丁內酯等內酯類;丙酮、甲基乙酮、環己酮(CH)、甲基-n-戊酮、甲基異戊酮、2-庚酮等之酮類;乙二醇、二甘醇、丙二醇、二丙二醇等之多價醇類;乙二醇單醋酸酯、二甘醇單醋酸酯、丙二醇單醋酸酯、或二丙二醇單醋酸酯等之具有酯結合之化合物、具有前述多價醇類或前述酯結合之化合物之單甲醚、單乙醚、單丙醚、具有單丁醚等單烷基醚或單苯醚等之醚結合之化合物等之多價醇類之衍生物(此等之中,係乙酸丙二醇單甲基醚酯(PGMEA)、丙二醇單甲基醚(PGME)為佳);如二噁烷之環式醚類、或乳酸甲酯、乳酸乙酯(EL)、醋酸甲酯、醋酸乙酯、醋酸丁酯、甲氧基乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸甲酯等之酯類;苯甲醚、乙基苄基醚、乙基苄醚甲苯酚基甲醚、二苯醚、二苄醚、苯乙醚、 丁基苯醚等之芳香族系有機溶劑等。 As a diluent solvent for forming the separation layer and the first adhesive layer, For example, linear hydrocarbons such as hexane, heptane, octane, nonane, methyl octane, decane, undecane, dodecane, and tridecane, and branches having a carbon number of 4 to 15 may be mentioned. Hydrocarbons, such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decalin, tetrahydronaphthalene, etc., cyclic hydrocarbons, p-menthane, o-menthane, m-menthane, Phenyl menthane, 1,4-decanediol, 1,8-nonanediol, decane, norbornane, decane, oxane, decane, longene, geraniol, nerol, Linalool, citral, citronellol, menthol, isomenthol, neomenthol, alpha-terpineol, beta-terpineol, gamma-terpineol, terpineol-1-ol, pine oil En-4-ol, dihydro rosin alcohol acetate, 1,4-ether, 1,8-equivalent, borneol, fragrant celery, ionone, flavonoids, camphor, d-limonene, l - terpene solvents such as limonene and dipentene; lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentanone, methyl isoprene a ketone such as a ketone or a 2-heptanone; a polyvalent alcohol such as ethylene glycol, diethylene glycol, propylene glycol or dipropylene glycol; ethylene glycol monoacetic acid An ester-bonding compound such as diethylene glycol monoacetate, propylene glycol monoacetate or dipropylene glycol monoacetate; monomethyl ether, monoethyl ether, monopropyl ether having the above polyvalent alcohol or a compound of the foregoing ester combination a derivative of a polyvalent alcohol such as a monoalkyl ether such as monobutyl ether or an ether-bonded compound such as monophenyl ether (such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl) Alkyl ether (PGME) is preferred; such as a cyclic ether of dioxane, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, butyl methoxyacetate, An ester of methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, methyl ethoxy propionate, etc.; anisole, ethyl benzyl ether, ethyl benzyl ether cresyl methyl ether, Diphenyl ether, dibenzyl ether, phenyl ether, An aromatic organic solvent such as butyl phenyl ether.

(其他之成分) (other ingredients)

構成第一之黏著劑層之黏著劑係可在不損及本質上之特性的範圍,可更包含具有混合性之其他之物質。例如,可更使用為改良黏著劑之性能之附加性樹脂、可塑劑、黏著輔助劑、安定劑、著色劑、熱聚合禁止劑及界面活性劑等慣用之各種添加劑。 The adhesive constituting the first adhesive layer may include other substances having a mixture property without impairing the properties of the essence. For example, various additives such as an additional resin, a plasticizer, an adhesion aid, a stabilizer, a colorant, a thermal polymerization inhibiting agent, and a surfactant which are properties for improving the adhesive properties can be further used.

[黏著劑之外周部分除去工程1] [Adhesive peripheral part removal engineering 1]

關於一實施形態之處理方法中,於第一之黏著劑塗佈工程後,於第一貼附工程之前,除去第一之黏著劑層12之外周部分。 In the treatment method of one embodiment, after the first adhesive application process, the outer peripheral portion of the first adhesive layer 12 is removed before the first attachment process.

由此,可除去過度塗佈之黏著劑。為此,於第一貼附工程中,可防止第一之黏著劑層12從層積體50之外周部分溢出,過度附著於第一支援板13。因此,在之後之分離工程,於分離層14照射光線之後,可無賦予過度力量,從層積體100分離第一支援板13。 Thereby, the overcoated adhesive can be removed. For this reason, in the first attachment process, the first adhesive layer 12 can be prevented from overflowing from the outer peripheral portion of the laminated body 50 and excessively attached to the first support plate 13. Therefore, in the subsequent separation process, after the light of the separation layer 14 is irradiated, the first support plate 13 can be separated from the laminated body 100 without imparting excessive force.

如圖1(c)所示,黏著劑層之外周部分除去工程1,係於第一之黏著劑層形成工程中,於基板11之單面上,形成黏著劑層12後,除去基板11上之外周部分之第一之黏著劑層12的工程。由此,於之後之第一貼附工程中,於貼合基板11與第一支援板13時,適切抑制第一之黏著劑層12從層積體50溢出。因此,於之後之第二 貼附工程中,可防止第一之黏著劑層12從層積體100溢出。 As shown in FIG. 1(c), the outer peripheral portion of the adhesive layer is removed in the first adhesive layer forming process, and the adhesive layer 12 is formed on one surface of the substrate 11, and then the substrate 11 is removed. The construction of the first adhesive layer 12 of the outer peripheral portion. Therefore, in the subsequent first attachment process, when the substrate 11 and the first support sheet 13 are bonded, the first adhesive layer 12 is appropriately prevented from overflowing from the laminate 50. Therefore, after the second In the attaching process, the first adhesive layer 12 can be prevented from overflowing from the laminated body 100.

做為除去形成於基板11上之外周部分的第一之黏著劑層12的方法,可使用公知之方法,雖未特別加以限定,例如對於第一之黏著劑層12之外周部分,將溶解液進行噴霧亦可,或使用配送噴嘴供給溶解液亦可。又,溶解液之噴霧、供給等係可邊旋轉基板11邊加以進行。 As a method of removing the first adhesive layer 12 formed on the outer peripheral portion of the substrate 11, a known method can be used, and although not particularly limited, for example, for the outer peripheral portion of the first adhesive layer 12, a solution is prepared. It is also possible to carry out the spraying or to supply the solution using a dispensing nozzle. Further, spraying, supplying, and the like of the solution can be performed while rotating the substrate 11.

然而,第一之黏著劑層12之溶解液係對應黏著劑之種類,適切加以選擇即可,雖未特別加以限定,例如可使用做為上述稀釋溶劑使用之溶劑,尤其可適切使用直鏈狀之碳化氫、碳數4至15之分支狀之碳化氫、單萜烯類、二萜烯類等之環狀之碳化氫(萜烯類)。 However, the solution of the first adhesive layer 12 may be selected depending on the type of the adhesive, and is not particularly limited. For example, a solvent used as the above-mentioned diluent solvent may be used, and in particular, a linear shape may be used. Carbonized hydrogen, a cyclic hydrocarbon such as a hydrocarbon having 4 to 15 carbon atoms, a cyclic hydrocarbon such as a monodecene or a diterpene (terpene).

[第一分離層形成工程] [First separation layer formation project]

如圖1之(d)及(e)所示,第一分離層形成工程係於第一支援板13之單面上,形成照射光線而變質之分離層14之工程。然而,第一之黏著劑層塗佈工程及第一分離層形成工程係在以下說明之第一貼附工程開始前完成即可,實施兩工程之順序則不限定,並行兩工程加以實施亦可。 As shown in (d) and (e) of FIG. 1, the first separation layer forming process is performed on one surface of the first support plate 13, and a process of forming the separation layer 14 which is deteriorated by irradiation with light is formed. However, the first adhesive layer coating process and the first separation layer forming engineering system may be completed before the start of the first attachment process described below, and the order of implementing the two projects is not limited, and the two projects may be implemented in parallel. .

(第一支援板13) (first support board 13)

第一支援板13係支持基板11之支持體。第一支援板 13,係隔著第一之黏著劑層12,貼附於基板11。 The first support plate 13 supports the support of the substrate 11. First support board 13, attached to the substrate 11 via the first adhesive layer 12.

第一支援板13,係於基板11之薄化,搬送、安裝等之製程時,為防止基板11之破損或變形,需具有必要之強度,可透過使分離層14變質之光者即可。由以上觀點視之,做為第一支援板13,例如可列舉玻璃、矽、丙烯酸系樹脂所成者。 The first support plate 13 is required to have the necessary strength to prevent the substrate 11 from being damaged or deformed during the process of thinning, transporting, or mounting the substrate 11, and to pass the light that deteriorates the separation layer 14. In view of the above, the first support plate 13 is exemplified by glass, enamel, and acrylic resin.

(分離層14) (separation layer 14)

分離層14係經由吸收隔著第一支援板13所照射之光而變質之材料所形成之層。 The separation layer 14 is a layer formed by absorbing a material that is deteriorated by light irradiated through the first support plate 13 .

又,發射照射於分離層14之光的雷射,係可對應於構成分離層14之材料加以適宜選擇,選擇可照射使構成分離層14之材料變質的波長光線之雷射即可。 Further, the laser beam that emits the light that is incident on the separation layer 14 can be appropriately selected in accordance with the material constituting the separation layer 14, and a laser that can illuminate the wavelength ray that deteriorates the material constituting the separation layer 14 can be selected.

分離層14係設於第一支援板13之隔著第一之黏著劑層12,貼合基板11側之表面。 The separation layer 14 is provided on the surface of the first support plate 13 via the first adhesive layer 12 and bonded to the substrate 11 side.

分離層14之厚度係例如較佳為0.05μm以上,50μm以下之範圍內,更佳為0.3μm以上,1μm以下之範圍內。分離層14之厚度收斂於0.05μm以上,50μm以下之範圍時,經由短時間之光照射及低能量之光照射,可對於分離層14產生所期望之變質。又,分離層14之厚度係從生產性之觀點視之,收斂於1μm以下之範圍尤佳。 The thickness of the separation layer 14 is preferably, for example, 0.05 μm or more and 50 μm or less, more preferably 0.3 μm or more and 1 μm or less. When the thickness of the separation layer 14 converges in the range of 0.05 μm or more and 50 μm or less, the desired deterioration of the separation layer 14 can be caused by short-time light irradiation and low-energy light irradiation. Further, the thickness of the separation layer 14 is particularly preferably in the range of 1 μm or less from the viewpoint of productivity.

然而,於分離層14與第一支援板13之間,更形成其他之層亦可。此時,其他之層係由透過光之材料 所構成即可。由此,可不妨礙對於分離層14之光之入射下,可於層積體,適切追加賦予良好性質之層。由於構成分離層14之材料之種類,所使用之光之波長亦有所不同。因此,構成其他層之材料,無需所有皆要透過光線,可適切選自可透過可使構成分離層14之材料變質之波長之光的材料。 However, another layer may be formed between the separation layer 14 and the first support plate 13. At this time, the other layers are made of light-transmitting material. It can be constructed. Thereby, it is possible to appropriately add a layer which imparts good properties to the laminate in order not to hinder the incidence of light to the separation layer 14. Due to the kind of material constituting the separation layer 14, the wavelength of light used is also different. Therefore, the materials constituting the other layers need not be transmitted through all of the light, and may be selected from materials which are permeable to light having a wavelength which can deteriorate the material constituting the separation layer 14.

又,分離層14係僅由具有吸收光之構造的材料加以形成者為佳,在不損及本發明之本質上之特性下,添加不具有吸收光之構造的材料,形成分離層14亦可。又,對向於分離層14之第一之黏著劑層12側之面為平坦者(未形成凹凸)為佳,由此,容易進行分離層14之形成,且加貼附之時,可進行均勻之貼附。 Further, it is preferable that the separation layer 14 is formed only of a material having a structure for absorbing light, and a material having no structure for absorbing light may be added without impairing the essential characteristics of the present invention, and the separation layer 14 may be formed. . Further, it is preferable that the surface on the side of the first adhesive layer 12 of the separation layer 14 is flat (no unevenness is formed), whereby the separation layer 14 can be easily formed, and when it is attached, it can be performed. Evenly attached.

分離層14係經由吸收來自雷射照射之光而變質者亦可。即,為了使分離層14變質,照射於分離層14之光,係可自雷射所照射者亦可。做為發射照射於分離層14之光的雷射之例子,可列舉YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光或非雷射光等。發射照射於分離層14之光的雷射,係可對應於構成分離層14之材料加以適宜選擇,選擇可照射使構成分離層14之材料變質的波長光線之雷射即可。 The separation layer 14 may also be deteriorated by absorbing light from laser irradiation. That is, in order to deteriorate the separation layer 14, the light irradiated to the separation layer 14 may be irradiated from a laser. Examples of the laser that emits light that illuminates the separation layer 14 include solid lasers such as YAG lasers, ruby lasers, glass lasers, YVO 4 lasers, LD lasers, and fiber lasers. Laser lasers such as liquid lasers, CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc., or other non-laser light. The laser light that emits the light that is incident on the separation layer 14 can be appropriately selected in accordance with the material constituting the separation layer 14, and a laser that can illuminate the wavelength ray that deteriorates the material constituting the separation layer 14 can be selected.

(碳氟化合物) (fluorocarbon)

分離層14係可由碳氟化合物所成。分離層14係經由碳氟化合物所構成,經由吸收光線而變質,結果,失去接受光照射前之強度或黏著性。由此,經由施加些微之外力(例如,提升第一支援板13等),破壞分離層14,可使第一支援板13與基板11易於分離。構成分離層14之碳氟化合物,係經由電漿CVD(化學氣相層積)法適切地加以成膜。 The separation layer 14 can be made of a fluorocarbon. The separation layer 14 is made of a fluorocarbon and is deteriorated by absorbing light, and as a result, the strength or adhesiveness before receiving light irradiation is lost. Thereby, the first support plate 13 and the substrate 11 can be easily separated by applying a slight external force (for example, raising the first support plate 13 or the like) to break the separation layer 14. The fluorocarbon constituting the separation layer 14 is appropriately formed into a film by a plasma CVD (Chemical Vapor Deposition) method.

碳氟化合物係根據該種類,吸收具有固有之範圍之波長的光。將使用於分離層14之碳氟化合物所吸收之範圍之波長光線,經由照射於分離層,可適切使碳氟化合物變質。然而,分離層14之光之吸收率係80%以上者為佳。 The fluorocarbon absorbs light having a wavelength within a specific range depending on the kind. By irradiating the separation layer with the wavelength light of the range absorbed by the fluorocarbon of the separation layer 14, the fluorocarbon can be appropriately deteriorated. However, it is preferable that the light absorption rate of the separation layer 14 is 80% or more.

做為照射於分離層14之光,對應於碳氟化合物可吸收之波長,可適切使用例如YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光或非雷射光。做為可使碳氟化合物變質之波長,雖非限定於此,例如可使用600nm以下之範圍者。 As the light irradiated to the separation layer 14, corresponding to the wavelength at which the fluorocarbon can be absorbed, for example, a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, a fiber laser or the like can be suitably used. Laser lasers such as solid lasers, pigment lasers, CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc. Or non-laser light. The wavelength at which the fluorocarbon can be deteriorated is not limited thereto, and for example, a range of 600 nm or less can be used.

(將具有光吸收性之構造含於該重覆單位的聚合物) (The polymer having a light absorbing structure contained in the repeating unit)

分離層14係含有將具有光吸收性之構造含於該重覆 單位的聚合物亦可。該聚合物係接受光之照射而變質。該聚合物之變質係經由令上述構造吸收照射之光而產生。分離層14係就聚合物之變質之結果而言,失去接受光照射前之強度或黏著性。由此,經由施加些微之外力(例如,提升第一支援板13等),破壞分離層14,可使第一支援板13與基板11易於分離。 The separation layer 14 contains a structure having light absorbability in the repeat The unit of polymer can also be. The polymer is degraded by irradiation with light. The deterioration of the polymer is produced by absorbing the irradiated light by the above configuration. The separation layer 14 loses strength or adhesion before receiving light irradiation as a result of deterioration of the polymer. Thereby, the first support plate 13 and the substrate 11 can be easily separated by applying a slight external force (for example, raising the first support plate 13 or the like) to break the separation layer 14.

具有光吸收性之上述構造,係吸收光線,使做為重覆單位含有該構造之聚合物加以變質之化學構造。該構造係例如含有置換或非置換之苯環、縮合環或雜環所成共軛π電子系之原子團。更詳細而言,該構造係可為陽基環(cardo)構造、或存在於上述聚合物之側鏈之二苯基甲酮構造、二苯亞碸構造、二苯碸構造(雙苯碸構造)、聯苯構造或聯苯胺構造。 The above structure having light absorbing property absorbs light and causes a chemical structure in which a polymer containing the structure is deteriorated as a repeating unit. This structure is, for example, a radical of a conjugated π-electron system in which a benzene ring, a condensed ring or a heterocyclic ring which is substituted or non-substituted is formed. In more detail, the structure may be a cardo structure, or a diphenyl ketone structure present in the side chain of the above polymer, a diphenyl hydrazine structure, a diphenyl fluorene structure (double benzoquinone structure) ), biphenyl structure or benzidine structure.

上述構造存在於上述聚合物之側鏈之時,該構造可經由以下之式加以表示。 When the above structure exists in the side chain of the above polymer, the configuration can be expressed by the following formula.

(式中,R係各別獨立,為烷基、芳基、鹵 素、氫氧基、酮基、亞碸基、碸基或N(R1)(R2)基,(在此、R1及R2係各個獨立,為氫原子或碳數1~5之烷基)、Z係不存在,或-CO-、-SO2-、-SO-或為-NH-,n係0或1~5之整數。) (wherein R is independently independent and is an alkyl group, an aryl group, a halogen, a hydroxyl group, a keto group, an anthranylene group, a fluorenyl group or an N(R 1 )(R 2 ) group, (here, R 1 And R 2 each independently, is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms), Z is not present, or -CO-, -SO 2 -, -SO- or -NH-, n is 0 or 1 An integer of ~5.)

又,上述聚合物係例如含有經由以下式中(a)~(d)之任一者所表示之重覆單位,或經由(e)所示或將(f)之構造含於該主鏈者。 Further, the polymer contains, for example, a repeating unit represented by any one of (a) to (d) in the following formula, or a structure represented by (e) or (f) is included in the main chain. .

(式中,l係1以上之整數,m係0或1~2之整數,X係於(a)~(e)中,上述“化2”所示之式之任一者,於(f)中,上述“化2”所示之式之任一者,或不存在者,Y1及Y2係各別獨立,為、-CO-或-SO2-。l係較佳為10以下之整數。) (wherein l is an integer of 1 or more, m is 0 or an integer of 1 to 2, and X is in (a) to (e), and any of the formulas represented by the above "Chemical 2" is (f) ), the above-mentioned "of 2" shown in the formula according to any one of, or absence, Y 1 and Y 2 independently of each system, is, based CO- or -SO 2 -.l preferably 10 or less The integer.)

做為上述“化2”所示之苯環、縮合環及雜環之例,可列舉苯基、置換苯基、苄基、置換苄基、萘、置換萘、 蒽、置換蒽、蒽醌、置換蒽醌、吖啶、置換吖啶、偶氮苯基、置換偶氮苯基、芴、置換芴、芴酮、置換芴酮、咔唑、置換咔唑、N-烷基咔唑、二苯呋喃、置換二苯呋喃、菲、置換菲、芘及置換芘。例示之置換基更具有置換基之時,該置換基係例如可選自烷基、芳基、鹵素原子、烷氧基、硝基、醛基、腈基、醯胺基、二烷胺基、碸胺基、醯亞胺基、羧酸、羧酸酯、磺酸、磺酸酯、烷胺基及芳胺基。 Examples of the benzene ring, the condensed ring and the hetero ring represented by the above "Chemical Formula 2" include a phenyl group, a substituted phenyl group, a benzyl group, a substituted benzyl group, a naphthalene group, and a substituted naphthalene. 蒽, substitution 蒽, 蒽醌, substitution 蒽醌, acridine, replacement acridine, azobenzene, substituted azobenzene, hydrazine, substituted hydrazine, fluorenone, substituted fluorenone, carbazole, substituted carbazole, N - alkyl carbazole, diphenylfuran, substituted diphenylfuran, phenanthrene, substituted phenanthrene, anthracene and substituted hydrazine. When the exemplified substituent further has a substituent group, the substituent group may be, for example, selected from the group consisting of an alkyl group, an aryl group, a halogen atom, an alkoxy group, a nitro group, an aldehyde group, a nitrile group, a decylamino group, a dialkylamino group, Amidino, quinone imine, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonate, alkylamino and arylamine groups.

上述“化2”所示置換基中,做為具有2個苯基之第5之置換基,Z為-SO2-之時之例子,可列舉雙(2,4-二羥基苯基)碸、雙(3,4-二羥基苯基)碸、雙(3,5-二羥基苯基)碸、雙(3,6-二羥基苯基)碸、雙(4-羥基苯基)碸、雙(3-羥基苯基)碸、雙(2-羥基苯基)碸及雙(3,5-二甲基-4-羥基苯基)碸等。 In the above-mentioned "Chemical Formula 2", as the substituent having the fifth substituent of the two phenyl groups, and Z being -SO 2 -, bis(2,4-dihydroxyphenyl)fluorene is exemplified. , bis(3,4-dihydroxyphenyl)fluorene, bis(3,5-dihydroxyphenyl)fluorene, bis(3,6-dihydroxyphenyl)fluorene, bis(4-hydroxyphenyl)fluorene, Bis(3-hydroxyphenyl)fluorene, bis(2-hydroxyphenyl)fluorene, and bis(3,5-dimethyl-4-hydroxyphenyl)hydrazine.

上述“化2”所示置換基中,做為具有2個苯基之第5之置換基,Z為-SO-之時之例子,可列舉雙(2,3-二羥基苯基)亞碸、雙(5-氯基-2,3-二羥基苯基)亞碸、雙(2,4-二羥基苯基)亞碸、雙(2,4-二羥基-6-甲基苯基)亞碸、雙(5-氯基-2,4-二羥基苯基)亞碸、雙(2,5-二羥基苯基)亞碸、雙(3,4-二羥基苯基)亞碸、雙(3,5-二羥基苯基)亞碸、雙(2,3,4-三羥基苯基)亞碸、雙(2,3,4-三羥基-6-甲基苯基)亞碸、雙(5-氯基-2,3,4-三羥基苯基)亞碸、雙(2,4,6-三羥基苯基)亞碸、雙(5-氯基-2,4,6-三羥基苯基)亞碸等。 In the above-mentioned "Chemical Formula 2", as the substituent having the fifth substituent of the two phenyl groups, and Z being -SO-, the bis(2,3-dihydroxyphenyl) afluorene may be mentioned. , bis(5-chloro-2,3-dihydroxyphenyl)arylene, bis(2,4-dihydroxyphenyl)anthracene, bis(2,4-dihydroxy-6-methylphenyl) Amidene, bis(5-chloro-2,4-dihydroxyphenyl)anthracene, bis(2,5-dihydroxyphenyl)anthracene, bis(3,4-dihydroxyphenyl)anthracene, Bis(3,5-dihydroxyphenyl)arylene, bis(2,3,4-trihydroxyphenyl)anthracene, bis(2,3,4-trihydroxy-6-methylphenyl) afluorene , bis(5-chloro-2,3,4-trihydroxyphenyl)arylene, bis(2,4,6-trihydroxyphenyl)anthracene, bis(5-chloro-2,4,6 - Trihydroxyphenyl) anthracene and the like.

上述“化2”所示置換基中、具有二個苯基之第 5之置換基、Z係-C(=O)-之情況為例,可列舉2,4-二羥基二苯基甲酮、2,3,4-三羥基二苯基甲酮、2,2’,4,4’-四羥基二苯基甲酮、2,2’,5,6’-四羥基二苯基甲酮、2-羥基-4-甲氧基二苯基甲酮、2-羥基-4-辛氧基二苯基甲酮、2-羥基-4-十二烷氧基二苯基甲酮、2,2’-二羥基-4-甲氧基二苯基甲酮、2,6-二羥基-4-甲氧基二苯基甲酮、2,2’-二羥基-4,4’-二甲氧基二苯基甲酮、4-胺基-2’-羥基二苯基甲酮、4-二甲基胺基-2’-羥基二苯基甲酮、4-二乙基胺基-2’-羥基二苯基甲酮、4-二甲基胺基-4’-甲氧基-2’-羥基二苯基甲酮、4-二甲基胺基-2’,4’-二羥基二苯基甲酮、及4-二甲基胺基-3’,4’-二羥基二苯基甲酮等。 In the above-mentioned "Chemical 2", the substituent has two phenyl groups. The case of the substitution group of 5 and the Z system-C(=O)- can be exemplified by 2,4-dihydroxydiphenyl ketone, 2,3,4-trihydroxydiphenyl ketone, 2, 2 ',4,4'-tetrahydroxydiphenyl ketone, 2,2',5,6'-tetrahydroxydiphenyl ketone, 2-hydroxy-4-methoxydiphenyl ketone, 2- Hydroxy-4-octyloxydiphenyl ketone, 2-hydroxy-4-dodecyloxydiphenyl ketone, 2,2'-dihydroxy-4-methoxydiphenyl ketone, 2 ,6-dihydroxy-4-methoxydiphenyl ketone, 2,2'-dihydroxy-4,4'-dimethoxydiphenyl ketone, 4-amino-2'-hydroxy Phenyl ketone, 4-dimethylamino-2'-hydroxydiphenyl ketone, 4-diethylamino-2'-hydroxydiphenyl ketone, 4-dimethylamino-4 '-Methoxy-2'-hydroxydiphenyl ketone, 4-dimethylamino-2',4'-dihydroxydiphenyl ketone, and 4-dimethylamino-3', 4'-dihydroxydiphenyl ketone and the like.

上述構造存在於上述聚合物之側鏈之時,含有上述構造之重覆單位之佔於上述聚合物之比例係,在分離層14之光透過率成為0.001%以上,10%以下之範圍內。使該比例收斂於如此範圍,加以調製聚合物時,分離層14則充分吸收光線,可確實且迅速地加以變質。即,容易進行從層積體100之第一支援板13之除去,可使該除去所需光照射時間縮短。 When the above structure is present in the side chain of the polymer, the ratio of the polymer containing the above-mentioned structure to the above-mentioned polymer is such that the light transmittance of the separation layer 14 is in the range of 0.001% or more and 10% or less. When the ratio is converged in such a range and the polymer is prepared, the separation layer 14 sufficiently absorbs light and can be surely and rapidly deteriorated. That is, it is easy to remove the first support plate 13 from the laminated body 100, and it is possible to shorten the irradiation time required for the removal.

上述構造係根據該種類之選擇,可吸收具有所期望之範圍之波長的光。例如,上述構造可吸收之光之波長係100nm以上、2000nm以下之範圍內為更佳。此範圍內中,上述構造可吸收之光之波長係在更短波長側,例如在100nm以上、500nm以下之範圍內。例如,上述構 造,較佳係經由吸收具有大約300nm以上、370nm以下之範圍內之波長的紫外光,可使含有該構造之聚合物加以變質。 The above structure is capable of absorbing light having a wavelength of a desired range depending on the selection of the kind. For example, it is more preferable that the wavelength of the light absorbable by the above structure is in the range of 100 nm or more and 2000 nm or less. Within this range, the wavelength of the light absorbable by the above structure is on the shorter wavelength side, for example, in the range of 100 nm or more and 500 nm or less. For example, the above structure It is preferred to modify the polymer containing the structure by absorbing ultraviolet light having a wavelength in the range of about 300 nm or more and 370 nm or less.

上述構造可吸收之光係例如自高壓水銀燈(波長:254nm以上、436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波長:351nm)或固體UV雷射(波長:355nm)所發出之光,或g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。 The light absorbing structure of the above structure is, for example, from a high pressure mercury lamp (wavelength: 254 nm or more, 436 nm or less), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser (wavelength) : 157 nm), XeCl laser (wavelength: 308 nm), XeF laser (wavelength: 351 nm) or solid UV laser (wavelength: 355 nm), or g line (wavelength: 436 nm), h line (wavelength: 405 nm) or i line (wavelength: 365 nm) or the like.

上述分離層14係含有做為重覆單位包含上述構造之聚合物,但分離層14可更含有上述聚合物以外之成分。做為該成分,可列舉填料、可塑劑及可提升第一支援板13之剝離性之成分等。此等成分可由不妨礙或促進上述構造所成光吸收及聚合物之變質之以往公知之物質或材料加以適切選擇。 The separation layer 14 contains a polymer having the above structure as a repeating unit, but the separation layer 14 may further contain components other than the above polymer. Examples of the component include a filler, a plasticizer, and a component which can improve the peelability of the first support sheet 13. These components can be suitably selected from conventionally known materials or materials which do not hinder or promote the light absorption and the deterioration of the polymer.

(無機物) (inorganic matter)

分離層14係可由無機物所成。分離層14係藉由經無機物所構成,經由吸收光線而變質,結果,失去接受光照射前之強度或黏著性。由此,經由施加些微之外力(例如,提升第一支援板13等),破壞分離層14,可使第一支援板13與基板11易於分離。 The separation layer 14 can be made of an inorganic substance. The separation layer 14 is made of an inorganic substance and is deteriorated by absorbing light, and as a result, the strength or adhesiveness before receiving light irradiation is lost. Thereby, the first support plate 13 and the substrate 11 can be easily separated by applying a slight external force (for example, raising the first support plate 13 or the like) to break the separation layer 14.

上述無機物係經由吸收光線而變質之構成即可,例如可適切使用選自金屬、金屬化合物及碳所成群之1種以上之無機物。金屬化合物係指含金屬原子之化合物,例如可為金屬氧化物、金屬氮化物。做為如此無機物之例示,雖未限定於此,可列舉選自金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN、及碳所成群之1種以上之無機物。然而,碳係包含碳之同素異形體之概念,例如可為鑽石、富勒烯、類金剛石碳、奈米碳管等。 The inorganic material may be modified by absorbing light, and for example, one or more inorganic substances selected from the group consisting of a metal, a metal compound, and carbon may be used as appropriate. The metal compound means a compound containing a metal atom, and may be, for example, a metal oxide or a metal nitride. Examples of such an inorganic substance are not limited thereto, and are selected from the group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. One or more inorganic substances. However, the carbon system includes the concept of a carbon allotrope, and may be, for example, diamond, fullerene, diamond-like carbon, carbon nanotube, or the like.

上述無機物係經由該種類,吸收具有固有之範圍之波長的光。將使用於分離層14之無機物所吸收之範圍之波長光線,經由照射於分離層,可適切使上述無機物變質。 The inorganic substance absorbs light having a wavelength in a specific range via this type. By irradiating the separation layer with the wavelength light of the range absorbed by the inorganic substance of the separation layer 14, the inorganic substance can be appropriately modified.

做為照射於無機物所成分離層14之光,對應於上述無機物可吸收之波長,可適切使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光或非雷射光。 As the light which is irradiated to the separation layer 14 of the inorganic substance, YAG laser, ruby laser, glass laser, YVO 4 laser, LD laser, fiber laser, etc. can be used depending on the wavelength at which the inorganic substance can absorb. Thunder of solid lasers, pigment lasers, liquid lasers, CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc. Light or non-laser light.

無機物所成分離層14係例如經由濺鍍、化學蒸鍍(CVD)、電鍍、電漿CVD、旋塗等之公知技術,可形成於第一支援板13上。由無機物所成分離層14之厚度係未特別加以限定,可充分吸收所使用之光之膜厚即可,例如成為0.05μm以上,10μm以下之範圍內之膜厚為 更佳。又,於構成分離層14之無機物所成無機膜(例如,金屬膜)之兩面或單面,預先塗佈黏著劑,貼附於第一支援板13及基板11亦可。 The inorganic material-separated layer 14 can be formed on the first support plate 13 by a known technique such as sputtering, chemical vapor deposition (CVD), electroplating, plasma CVD, or spin coating. The thickness of the separation layer 14 formed of the inorganic material is not particularly limited, and the film thickness of the light to be used can be sufficiently absorbed, and for example, the film thickness in the range of 0.05 μm or more and 10 μm or less is Better. Further, an adhesive may be applied to both surfaces or a single surface of the inorganic film (for example, a metal film) formed of the inorganic material constituting the separation layer 14 and attached to the first support plate 13 and the substrate 11.

然而,做為分離層14使用金屬膜之時,根據分離層14之膜質、雷射光源之種類、雷射輸出等之條件,可能產生雷射之反射或膜之帶電等。為此,將反射防止膜或帶電防止膜設於分離層14之上下或任一方,達成其等之對策者為佳。 However, when a metal film is used as the separation layer 14, depending on the film quality of the separation layer 14, the type of the laser light source, the laser output, etc., reflection of the laser or charging of the film may occur. For this reason, it is preferable to provide the anti-reflection film or the anti-static film on the upper or lower side of the separation layer 14 to achieve countermeasures such as the above.

(具有紅外線吸收性之構造的化合物) (a compound having an infrared absorbing structure)

分離層14係經由具有紅外線吸收性之構造的化合物加以形成亦可。該化合物係經由吸收紅外線加以變質。分離層14係就化合物之變質之結果而言,失去接受紅外線照射前之強度或黏著性。由此,經由施加些微之外力(例如,提升支持體等),破壞分離層14,可使第一支援板13與基板11易於分離。 The separation layer 14 may be formed by a compound having an infrared absorbing structure. This compound is modified by absorption of infrared rays. The separation layer 14 loses strength or adhesion before receiving infrared radiation as a result of deterioration of the compound. Thereby, the first support plate 13 and the substrate 11 can be easily separated by applying a slight external force (for example, lifting the support or the like) to break the separation layer 14.

做為包含具有紅外線吸收性之構造、或具有紅外線吸收性之構造之化合物,係可有例如烷烴、烯烴(乙烯基、順式、反式、亞乙烯基、三置換、四置換、共軛、枯牧烯、環式)、炔烴(一置換、二置換)、單環式芳香族(苯、一置換、二置換、三置換)、醇及酚類(自由OH、分子內氫結合、分子間氫結合、飽和第二級、飽和第三級、不飽和第二級、不飽和第三級)、縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過 氧化物醚、酮、二烷基羰基、芳香族羰基、1,3-二酮之烯醇、o-羥基芳基酮、二烷基醛基、芳香族醛基、羧酸(二量體、羧酸陰離子)、蟻酸酯、醋酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族氯氧化物、芳香族氯氧化物、酸酐(共軛、非共軛、環式、非環式)、第一級醯胺基、第二級醯胺基、內醯胺、第一級胺基(脂肪族、芳香族)、第二級胺基(脂肪族、芳香族)、第三級胺基(脂肪族、芳香族)、第一級胺鹽、第二級胺鹽、第三級胺鹽、銨離子、脂肪族腈、芳香族腈、碳二亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫氰酸酯、脂肪族異硫氰酸酯、芳香族異硫氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝基胺、亞硝胺、硝酸酯、亞硝酸酯、硝基結合(脂肪族、芳香族、單量體、二量體)、硫醇及硫酚及硫羥酸等之硫磺化合物、硫羰基、亞碸、碸、磺醯氯、第一級磺胺、第二級磺胺、硫酸酯、碳-鹵素結合、Si-A1結合(A1係H、C、O或鹵素)、P-A2結合(A2係H、C或O)、或Ti-O結合。 The compound which has a structure having an infrared absorbing property or a structure having infrared absorbing properties may be, for example, an alkane or an olefin (vinyl group, cis, trans, vinylidene, trisubstituted, tetrasubstituted, conjugated, Algae, cyclic formula, alkyne (one substitution, two substitution), monocyclic aromatic (benzene, one substitution, two substitution, three substitution), alcohol and phenol (free OH, intramolecular hydrogen bonding, molecule Inter-hydrogen bonding, saturated second stage, saturated third stage, unsaturated second stage, unsaturated third stage), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, oxirane ring Ether, peroxide ether, ketone, dialkylcarbonyl, aromatic carbonyl, 1,3-diketone enol, o-hydroxyaryl ketone, dialkyl aldehyde group, aromatic aldehyde group, carboxylic acid (two Quantity, carboxylic acid anion), formic acid ester, acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic oxychloride, aromatic chlorine Oxide, acid anhydride (conjugated, non-conjugated, cyclic, acyclic), first-grade guanamine, second-grade guanamine, indoleamine, first-grade amine (aliphatic) Aromatic), second-grade amine group (aliphatic, aromatic), tertiary amine group (aliphatic, aromatic), first-grade amine salt, second-grade amine salt, tertiary amine salt, ammonium ion , aliphatic nitrile, aromatic nitrile, carbodiimide, aliphatic isonitrile, aromatic isonitrile, isocyanate, thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitrate Base compound, aromatic nitro compound, nitroamine, nitrosamine, nitrate, nitrite, nitro group (aliphatic, aromatic, mono-, di-dimer), mercaptan and thiophenol and sulfur Sulfur compound such as hydroxy acid, thiocarbonyl, hydrazine, hydrazine, sulfonium chloride, first-stage sulfonamide, second-stage sulfonamide, sulfate, carbon-halogen combination, Si-A 1 binding (A 1 H, C, O or halogen), PA 2 binding (A 2 system H, C or O), or Ti-O bonding.

做為包含上述碳-鹵素結合之構造,例如可列舉-CH2Cl、-CH2Br、-CH2I、-CF2-、-CF3、-CH=CF2、-CF=CF2、芳基氟及芳基氯等。 Examples of the structure including the above-described carbon-halogen bond include -CH 2 Cl, -CH 2 Br, -CH 2 I, -CF 2 -, -CF 3 , -CH=CF 2 , -CF=CF 2 , Aryl fluoride and aryl chloride.

做為包含上述Si-A1結合之構造,可列舉SiH、SiH2、SiH3、Si-CH3、Si-CH2-、Si-C6H5、SiO-脂肪族、Si-OCH3、Si-OCH2CH3、Si-OC6H5、Si-O-Si、Si-OH、SiF、SiF2、及SiF3等。做為包含Si-A1結合之構 造,尤其形成矽氧烷骨架及倍半矽氧烷骨架者為佳。 Examples of the structure including the Si-A 1 bond described above include SiH, SiH 2 , SiH 3 , Si-CH 3 , Si-CH 2 -, Si-C 6 H 5 , SiO-aliphatic, Si-OCH 3 , Si—OCH 2 CH 3 , Si—OC 6 H 5 , Si—O—Si, Si—OH, SiF, SiF 2 , and SiF 3 . As the structure including the Si-A 1 bond, it is preferable to form a siloxane chain and a sesquiterpene skeleton.

做為包含上述P-A2結合之構造,可列舉PH、PH2、P-CH3、P-CH2-、P-C6H5、A3 3-P-O(A3係脂肪族或芳香族)、(A4O)3-P-O(A4係烷基)、P-OCH3、P-OCH2CH3、P-OC6H5、P-O-P、P-OH、及O=P-OH等。 Examples of the structure including the above PA 2 combination include PH, PH 2 , P-CH 3 , P-CH 2 -, PC 6 H 5 , A 3 3 -PO (A 3 aliphatic or aromatic), A 4 O) 3 -PO (A 4 alkyl group), P-OCH 3 , P-OCH 2 CH 3 , P-OC 6 H 5 , POP, P-OH, and O=P-OH.

上述構造係根據該種類之選擇,可吸收具有所期望之範圍之波長的紅外線。具體而言,上述構造可吸收之紅外線之波長係例如1μm以上、20μm以下之範圍內,更可適切吸收2μm以上、15μm以下之範圍內。更且,上述構造為Si-O結合、Si-C結合及Ti-O結合之時,可為9μm以上、11μm以下之範圍內。然而,各構造可吸收之紅外線之波長只要是該當業者可容易被理解。例如做為各構造之吸收帶,可參照非專利文獻:SILVERSTEIN.BASSLER.MORRILL著「有機化合物之光譜所成定性法(第5版)-MS、IR、NMR、UV之併用-」(1992年發行)第146頁~第151頁之記載。 The above structure is capable of absorbing infrared rays having a wavelength of a desired range depending on the selection of the kind. Specifically, the wavelength of the infrared ray that can be absorbed by the above-described structure is, for example, in the range of 1 μm or more and 20 μm or less, and can be suitably absorbed in the range of 2 μm or more and 15 μm or less. Further, when the above structure is Si-O bonding, Si-C bonding, and Ti-O bonding, it may be in the range of 9 μm or more and 11 μm or less. However, the wavelength of the infrared light that can be absorbed by each configuration can be easily understood by the practitioner. For example, as an absorption band for each structure, refer to the non-patent literature: SILVERSTEIN. BASSLER. MORRILL is described in "Quality of Organic Compounds (5th Edition) - Combination of MS, IR, NMR, and UV-" (published in 1992) on pages 146 to 151.

做為使用於分離層14之形成之具有紅外線吸收性之構造的化合物,具有上述構造之化合物中,只要為了塗佈可溶解於溶媒、固化形成固層者,則不特別加以限定。但是,為了有效變質分離層14之化合物,可容易分離第一支援板13與基板11,以分離層14之紅外線之吸收為大,即於分離層14照射紅外線時之紅外線之透過率為低者為佳。具體而言,分離層14之紅外線之透過率低於90%者為佳,紅外線之透過率低於80%者更佳。 The compound having the structure having the infrared absorbing property formed in the separation layer 14 is not particularly limited as long as it is soluble in the solvent and solidified to form a solid layer for coating. However, in order to effectively deteriorate the compound of the separation layer 14, the first support plate 13 and the substrate 11 can be easily separated, and the absorption of infrared rays by the separation layer 14 is large, that is, the transmittance of infrared rays when the separation layer 14 is irradiated with infrared rays is low. It is better. Specifically, the transmittance of the infrared ray of the separation layer 14 is preferably less than 90%, and the transmittance of infrared rays is preferably less than 80%.

舉一例加以說明時,做為具有矽氧烷骨架之化合物,例如,可使用將下述化學式(3)所示之重覆單位及下述化學式(4)所示重覆單位之共聚合物之樹脂,或將下述化學式(3)所示之重覆單位及來自丙烯酸系化合物之重覆單位之共聚物之樹脂。 In the case of the compound having a siloxane skeleton, for example, a repeating unit represented by the following chemical formula (3) and a copolymer of the repeating unit represented by the following chemical formula (4) can be used. A resin or a resin of a repeating unit represented by the following chemical formula (3) and a copolymer of a repeating unit derived from an acrylic compound.

(化學式(4)中,R3係氫、碳數10以下之烷基,或碳數10以下之烷氧基。) (In the chemical formula (4), R 3 is hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms.)

其中,做為具有矽氧烷骨架之化合物,較佳為上述化學式(3)所示之重覆單位及下述化學式(5)所示重覆單位之共聚合物之t-丁基苯乙烯(TBST)-二甲基矽氧烷共聚物,更佳為將上述化學式(3)所示之重覆單位及下述化學式(5)所示重覆單位,以1:1含有之TBST-二甲基矽氧烷共聚物。 Among them, as the compound having a siloxane skeleton, t-butyl styrene of a repeating unit represented by the above chemical formula (3) and a repeating unit of the following chemical formula (5) is preferable. The TBST)-dimethyloxane copolymer is more preferably a repeating unit represented by the above chemical formula (3) and a repeating unit represented by the following chemical formula (5), and a 1:1 containing TBST-dimethylene. A base oxyalkylene copolymer.

又,做為具有倍半矽氧烷骨架之化合物,例如,可使用下述化學式(6)所示之重覆單位及下述化學式(7)所示重覆單位之共聚合物之樹脂。 In addition, as the compound having a sesquiterpene skeleton, for example, a repeating unit represented by the following chemical formula (6) and a resin of a repeating unit copolymer represented by the following chemical formula (7) can be used.

(化學式(6)中,R4係氫或碳數1以上,10 以下之烷基,化學式(7)中,R5係碳數1以上,10以下之烷基或苯基。) (In the chemical formula (6), R 4 is hydrogen or an alkyl group having 1 or more carbon atoms and 10 or less, and in the chemical formula (7), R 5 is an alkyl group having 1 or more carbon atoms and 10 or less carbon atoms or a phenyl group.

做為具有倍半矽氧烷骨架之化合物,除此之外,可適切利用日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、日本特開2009-263316號公報(2009年11月12日公開)及日本特開2009-263596號公報(2009年11月12日公開)所揭示之各倍半矽氧烷樹脂。 As a compound having a sesquiterpene oxyalkylene skeleton, it is possible to use Japanese Patent Laid-Open Publication No. 2007-258663 (published on Oct. 4, 2007) and JP-A-2010-120901 (2010) Each of the sesquiterpene oxides disclosed in Japanese Laid-Open Patent Publication No. 2009-263316 (published on Nov. 12, 2009) and JP-A-2009-263596 (published on Nov. 12, 2009) Resin.

其中,做為具有倍半矽氧烷骨架之化合物,較佳為下述化學式(8)所示之重覆單位及下述化學式(9)所示重覆單位之共聚物,更佳為將下述化學式(8)所示之重覆單位及下述化學式(9)所示重覆單位,以7:3含有之共聚物。 In particular, the compound having a sesquiterpene oxide skeleton is preferably a repeating unit represented by the following chemical formula (8) and a copolymer of the repeating unit represented by the following chemical formula (9), more preferably The repeating unit represented by the chemical formula (8) and the repeating unit represented by the following chemical formula (9) are copolymers of 7:3.

具有倍半矽氧烷骨架之聚合物,可為無規構造、梯型構造、及籠型構造,任一之構造皆可。 The polymer having a sesquioxane skeleton may be a random structure, a ladder structure, or a cage structure, and any of the structures may be used.

又,做為包含Ti-O結合之化合物,可列舉、例如(i)四-i-丙氧基鈦、四-n-丁氧基鈦、四(2-乙基己氧基)鈦、及鈦-i-丙氧基乙基己二醇等之烷氧基鈦;(ii)二-i-丙氧基.螺絲(乙醯丙酮基)鈦、及丙基二氧基鈦雙(乙醯乙酸乙酯)等螯合鈦;(iii)i-C3H7O-[-Ti(O-i-C3H7)2-O-]n-i-C3H7、及n-C4H9O-[-Ti(O-n-C4H9)2-O-]n-n-C4H9等鈦聚合物;(iv)三-n-丁氧基鈦單硬脂酸、硬脂酸鈦、二-i-丙氧基鈦二異硬脂酸酯、及(2-n-丁氧基羰基苯甲酸基)三丁氧基鈦等 之醯化鈦;(v)二-n-丁氧基.螺絲(三乙醇胺)鈦等之水溶性鈦化合物等。 Further, examples of the compound containing Ti-O bond include, for example, (i) tetra-i-propoxytitanium, tetra-n-butoxytitanium, tetrakis(2-ethylhexyloxy)titanium, and Titanium alkoxide such as titanium-i-propoxyethyl hexanediol; (ii) di-i-propoxy group. Chelating titanium such as titanium (acetonitrile acetonate) titanium and propyl dioxy titanium bis (acetic acid ethyl acetate); (iii) iC 3 H 7 O-[-Ti(OiC 3 H 7 ) 2 -O -] n -iC 3 H 7 , and nC 4 H 9 O-[-Ti(OnC 4 H 9 ) 2 -O-] n -nC 4 H 9 and other titanium polymers; (iv) tri-n-butoxy Deuteration of base titanium monostearic acid, titanium stearate, di-i-propoxy titanium diisostearate, and (2-n-butoxycarbonylbenzoic acid) tributoxide titanium Titanium; (v) di-n-butoxy. A water-soluble titanium compound such as a screw (triethanolamine) titanium or the like.

其中,做為包含Ti-O結合之化合物,以二-n-丁氧基.雙(三乙醇胺)鈦(Ti(OC4H9)2[OC2H4N(C2H4OH)2]2)為佳。 Among them, as a compound containing Ti-O, with di-n-butoxy. Bis(triethanolamine)titanium (Ti(OC 4 H 9 ) 2 [OC 2 H 4 N(C 2 H 4 OH) 2 ] 2 ) is preferred.

上述分離層14雖含有具有紅外線吸收性之構造之化合物,但分離層14可更含有上述化合物以外之成分。做為該成分,可列舉填料、可塑劑及可提升第一支援板13之剝離性之成分等。此等成分可由不妨礙或促進上述構造所成紅外線之吸收及化合物之變質之以往公知之物質或材料加以適切選擇。 Although the separation layer 14 contains a compound having an infrared absorbing structure, the separation layer 14 may further contain components other than the above compounds. Examples of the component include a filler, a plasticizer, and a component which can improve the peelability of the first support sheet 13. These components can be suitably selected from conventionally known substances or materials which do not hinder or promote the absorption of infrared rays and the deterioration of the compound by the above structure.

(紅外線吸收物質) (infrared absorbing material)

分離層14係含有紅外線吸收物質亦可。分離層14係藉由含有紅外線吸收物質加以構成,經由吸收光線而變質,結果,失去接受光照射前之強度或黏著性。由此,經由施加些微之外力(例如,提升第一支援板13等),破壞分離層14,可使第一支援板13與基板11易於分離。 The separation layer 14 may contain an infrared absorbing material. The separation layer 14 is composed of an infrared absorbing material and is deteriorated by absorbing light, and as a result, the strength or adhesiveness before receiving light irradiation is lost. Thereby, the first support plate 13 and the substrate 11 can be easily separated by applying a slight external force (for example, raising the first support plate 13 or the like) to break the separation layer 14.

紅外線吸收物質係經由吸收紅外線而變質之構成即可,例如可適切使用碳黑、鐵粒子,或鋁粒子。紅外線吸收物質係根據該種類,吸收具有固有之範圍之波長的光。將使用於分離層14之紅外線吸收物質所吸收之範圍之波長光線,經由照射於分離層14,可適切使紅外線吸收物質變質。 The infrared ray absorbing material may be modified by absorbing infrared rays. For example, carbon black, iron particles, or aluminum particles may be used as appropriate. The infrared absorbing material absorbs light having a wavelength in a specific range depending on the kind. By irradiating the separation layer 14 with the wavelength light of the range absorbed by the infrared absorbing material of the separation layer 14, the infrared absorbing material can be appropriately deteriorated.

(第一貼附工程) (first attached project)

如圖1之(f)所示,第一貼附工程中,隔著第一之黏著劑層12,貼附第一支援板13與基板11。第一貼附工程中,於減壓條件下,經由加熱之一對板構件,使形成於第一之黏著劑層12與第一支援板上的分離層14相向地加以重疊,挾著基板11與第一支援板13而貼合亦可。由此,可形成層積體50。然而,第一貼附工程中,貼附基板11與第一支援板13之貼附溫度、貼附壓力及貼附時間係對應第一之黏著劑之種類適切加以調整即可。 As shown in FIG. 1(f), in the first attachment process, the first support plate 13 and the substrate 11 are attached via the first adhesive layer 12. In the first attachment process, the first adhesive layer 12 is overlapped with the separation layer 14 on the first support plate by heating one of the pair of plate members under reduced pressure, and the substrate 11 is placed next to each other. It is also possible to bond with the first support plate 13. Thereby, the laminated body 50 can be formed. However, in the first attachment process, the attachment temperature, the attachment pressure, and the attachment time of the attachment substrate 11 and the first support plate 13 may be adjusted in accordance with the type of the first adhesive.

經由第一貼附工程形成之層積體50係使基板11,第一之黏著劑層12、分離層14及第一支援板13依此順序加以層積的層積體。層積體50係在將第二支援板23層積於層積體50之工程中,經由第一支援板13支持基板11,可防止基板11之破損。 The laminate 50 formed by the first attachment process is a laminate in which the substrate 11 and the first adhesive layer 12, the separation layer 14, and the first support plate 13 are laminated in this order. In the process of laminating the second support plate 23 to the laminate 50, the laminate 50 supports the substrate 11 via the first support plate 13, and the substrate 11 can be prevented from being damaged.

[黏著劑之外周部分除去工程2] [Adhesive removal part of the outer part of the work 2]

如圖1之(g)所示,關於一實施形態之處理方法中,於第一貼附工程之後,於第二貼附工程之前,除去第一之黏著劑層之外周部分。 As shown in (g) of FIG. 1, in the processing method of one embodiment, after the first attaching process, the outer peripheral portion of the first adhesive layer is removed before the second attaching process.

由此,第一貼附工程中,可適切除去於貼合基板11與第一支援板13時溢出之第一之黏著劑層12。經由於形成層積體50時,除去從層積體50溢出第一之黏著劑層12之外周,可防止從之後工程中形成之層積體 100溢出過多之黏著劑層。 Thereby, in the first attachment process, the first adhesive layer 12 that overflows when the substrate 11 and the first support plate 13 are bonded can be appropriately removed. When the laminated body 50 is formed, the outer periphery of the first adhesive layer 12 is removed from the laminated body 50, and the laminated body formed from the subsequent engineering can be prevented. 100 overflows too much adhesive layer.

黏著劑之外周部分除去工程2中,使用與黏著劑之外周部分除去工程1相同之溶解液,經由相同之方法,除去從層積體50溢出之第一之黏著劑層12之外周部分即可。在此,從基板之外周之端部朝向內側,以0.0mm以上,1.0mm以下之範圍之寬度,除去第一之黏著劑層12之基板11上之外周部分為佳。又,將第一之黏著劑層12形成於第一支援板13上之時,除去形成於第一支援板13上之第一之黏著劑層12之外周部分即可。在此,從第一支援板13之外周之端部朝向內側,較佳以0.0mm以上,1.0mm以下之範圍之寬度,除去第一之黏著劑層12之第一支援板13上之外周部分為佳。由此,於之後之第二貼附工程中,可抑制第一之黏著劑層之溢出。又,可防止基板11之端部從第一之黏著劑層過度露出之故,於之後種種工程中,可防止基板之端部產生碎屑。 In the outer peripheral portion removal process 2 of the adhesive, the same solution as the outer peripheral portion of the adhesive is removed, and the outer peripheral portion of the first adhesive layer 12 overflowing from the laminated body 50 is removed by the same method. . Here, it is preferable to remove the outer peripheral portion of the substrate 11 of the first adhesive layer 12 from the end portion of the outer periphery of the substrate toward the inner side in a width of 0.0 mm or more and 1.0 mm or less. Further, when the first adhesive layer 12 is formed on the first support plate 13, the outer peripheral portion of the first adhesive layer 12 formed on the first support plate 13 may be removed. Here, the outer peripheral portion of the first support plate 13 of the first adhesive layer 12 is removed from the end portion of the outer periphery of the first support plate 13 toward the inner side, preferably in a range of 0.0 mm or more and 1.0 mm or less. It is better. Thereby, in the subsequent second attachment process, the overflow of the first adhesive layer can be suppressed. Further, it is possible to prevent the end portion of the substrate 11 from being excessively exposed from the first adhesive layer, and in the subsequent processes, it is possible to prevent the end portion of the substrate from being chipped.

然而,於本實施形態中,黏著劑之外周部分除去工程2係雖在圖2之(a)之薄化工程前進行,但不限定於此。黏著劑之外周部分除去工程2係只要是形成層積體50之後,可於圖2之(a)之薄化工程之後進行。 However, in the present embodiment, the outer peripheral portion of the adhesive removal process 2 is performed before the thinning process of (a) of Fig. 2, but is not limited thereto. The outer peripheral portion removal process 2 of the adhesive can be carried out after the thinning process of (a) of FIG. 2 as long as the laminate 50 is formed.

(薄化工程) (thinning project)

如圖2之(a)所示,關於一實施形態之處理方法中,於第一貼附工程之後,於第二貼附工程之前,更包含薄化背向於貼附基板11之第一支援板13之面的薄化工 程。薄化工程係例如經由磨床等,研磨基板11而薄化。由此,可將基板11成為特定之厚度。 As shown in FIG. 2(a), in the processing method according to the embodiment, after the first attaching process, before the second attaching process, the first support for thinning the backing substrate 11 is further included. Thin chemical on the side of the board 13 Cheng. The thinning process is performed by polishing the substrate 11 via a grinding machine or the like, for example. Thereby, the substrate 11 can be made to have a specific thickness.

[第二之黏著劑塗佈工程] [Second Adhesive Coating Engineering]

關於一實施形態之處理方法中,更包含於第二貼附工程之前,於基板11及第二支援板(第二支持體)之至少一方,塗佈黏著劑,形成第二之黏著劑層22的第二之黏著劑層塗佈工程。 In the processing method according to the embodiment, the adhesive is applied to at least one of the substrate 11 and the second support plate (second support) to form the second adhesive layer 22 before the second attachment process. The second layer of adhesive coating works.

如圖2之(b)所示,於一實施形態中,第二之黏著劑層22係塗佈於經由進行薄化工程而薄化之基板11上。然而,第二之黏著劑層22係於基板11上,經由旋塗法等之第一之黏著劑層塗佈工程所使用之方法而進行。又,關於本發明之處理方法中,層積體50之基板11與第二支援板係隔著第二之黏著劑層22加以貼合即可。因此,第二之黏著劑層塗佈工程係成為於第二支援板塗佈黏著劑之實施形態亦可。 As shown in FIG. 2(b), in one embodiment, the second adhesive layer 22 is applied onto the substrate 11 which is thinned by thinning. However, the second adhesive layer 22 is attached to the substrate 11 and is subjected to a method used in the first adhesive layer coating process such as spin coating. Further, in the processing method of the present invention, the substrate 11 of the laminate 50 and the second support sheet may be bonded together via the second adhesive layer 22. Therefore, the second adhesive layer coating process may be an embodiment in which the second support sheet is coated with an adhesive.

(第二之黏著劑層22) (second adhesive layer 22)

第二之黏著劑層22係黏著層積體50之基板11與第二支援板23。在此,為了取得形成第二之黏著劑層22之方法、取得第二之黏著劑層22之厚度、做為形成第二之黏著劑層22之第二之黏著劑使用之黏著劑之種類及玻璃轉移溫度等係與上述第一之黏著劑層12之說明相同。惟,此等事項在第一之黏著劑層12與第二之黏著劑層22 可為相同,亦可為互異。 The second adhesive layer 22 is the substrate 11 and the second support plate 23 to which the laminate 50 is adhered. Here, in order to obtain the method of forming the second adhesive layer 22, the thickness of the second adhesive layer 22, and the type of adhesive used as the second adhesive for forming the second adhesive layer 22, The glass transition temperature and the like are the same as those of the first adhesive layer 12 described above. However, such matters are in the first adhesive layer 12 and the second adhesive layer 22 Can be the same or different.

尤其,第二之黏著劑層22,可使用與第一之黏著劑層12相同之黏著劑加以形成,亦可使用與第一之黏著劑層12不同之黏著劑加以形成。在此、形成第二之黏著劑層22之黏著劑,與形成第一之黏著劑層12之黏著劑不同之時,形成第二之黏著劑層22之黏著劑之熔點係使用較形成第一之黏著劑層12之黏著劑之熔點為低者為佳。由此,於第二貼附工程中,可在更低溫下形成層積體100。因此,於第二貼附工程中,可防止第一之黏著劑層12之融解。 In particular, the second adhesive layer 22 may be formed using the same adhesive as the first adhesive layer 12, or may be formed using an adhesive different from the first adhesive layer 12. Here, when the adhesive forming the second adhesive layer 22 is different from the adhesive forming the first adhesive layer 12, the melting point of the adhesive forming the second adhesive layer 22 is formed first. It is preferred that the adhesive of the adhesive layer 12 has a lower melting point. Thereby, in the second attachment process, the laminate 100 can be formed at a lower temperature. Therefore, in the second attachment process, the melting of the first adhesive layer 12 can be prevented.

[黏著劑之外周部分除去工程3] [Adhesive peripheral part removal engineering 3]

如圖2之(c)所示,關於一實施形態之處理方法中,於第二之黏著劑塗佈工程後,於第二貼附工程之前,除去第一之黏著劑層12及第二之黏著劑層22之外周部分。 As shown in FIG. 2(c), in the processing method of one embodiment, after the second adhesive coating process, the first adhesive layer 12 and the second layer are removed before the second attachment process. The outer peripheral portion of the adhesive layer 22.

由此,於第二貼附工程中,可適切防止第一之黏著劑層12及第二之黏著劑層22從層積體100溢出。 Thereby, in the second attachment process, the first adhesive layer 12 and the second adhesive layer 22 can be appropriately prevented from overflowing from the laminate 100.

黏著劑之外周部分除去工程3中,使用與黏著劑之外周部分除去工程1及2相同之溶解液,經由相同之方法,除去形成於基板11上之第二之黏著劑層22之外周部分即可。在此,從基板11之外周之端部朝向內側,較佳以0.0mm以上,3.0mm以下,更佳以0.5mm以上、1.5mm以下之範圍之寬度,除去第一之黏著劑層12之基 板11上之外周部分為佳。又,欲除去第二之黏著劑層12之外周部分之寬度,係對應使用黏著劑之種類、塗佈量及基板之種類等,適切加以調整即可。又,將第二之黏著劑層22形成於第二支援板23上之時,除去形成於第二支援板23上之第二之黏著劑層22之外周部分即可。在此,從第二支援板23之外周之端部朝向內側,較佳以0.0mm以上,3.0mm以下,更佳為0.5mm以上、1.5mm以下之範圍之寬度,除去第一之黏著劑層12之第二支援板23上之外周部分為佳。 In the outer peripheral portion removal process 3 of the adhesive, the same solution as the outer portions of the adhesive is removed, and the outer peripheral portion of the second adhesive layer 22 formed on the substrate 11 is removed by the same method. can. Here, the base of the first adhesive layer 12 is removed from the end portion of the outer periphery of the substrate 11 toward the inner side, preferably 0.0 mm or more, 3.0 mm or less, more preferably 0.5 mm or more and 1.5 mm or less. The outer peripheral portion of the plate 11 is preferred. Further, the width of the outer peripheral portion of the second adhesive layer 12 to be removed may be appropriately adjusted in accordance with the type of the adhesive, the amount of the coating, the type of the substrate, and the like. Further, when the second adhesive layer 22 is formed on the second support plate 23, the outer peripheral portion of the second adhesive layer 22 formed on the second support plate 23 may be removed. Here, the first adhesive layer is removed from the end portion of the outer periphery of the second support plate 23 toward the inner side, preferably 0.0 mm or more, 3.0 mm or less, more preferably 0.5 mm or more and 1.5 mm or less. The outer peripheral portion of the second support board 23 of 12 is preferable.

又,經由除去第一之黏著劑層12之外周部分,於之後之第二貼附工程,可適切抑制第一之黏著劑層12之溢出,可防止基板11之端部從第一之黏著劑層過度露出而產生碎屑。 Further, by removing the outer peripheral portion of the first adhesive layer 12 and then the second attachment process, the overflow of the first adhesive layer 12 can be appropriately suppressed, and the end portion of the substrate 11 can be prevented from being adhered from the first adhesive. The layer is excessively exposed to produce debris.

又,經由除去第二之黏著劑層22之外周部分,於層積體100之第一支援板13,防止附著形成第二之黏著劑層22之黏著劑。因此,在之後之分離工程,於分離層14照射光線之後,可無賦予過度力量,從層積體100分離第一支援板13。 Further, the adhesive agent forming the second adhesive layer 22 is prevented from adhering to the first support sheet 13 of the laminate 100 by removing the outer peripheral portion of the second adhesive layer 22. Therefore, in the subsequent separation process, after the light of the separation layer 14 is irradiated, the first support plate 13 can be separated from the laminated body 100 without imparting excessive force.

[第二分離層形成工程] [Second separation layer formation project]

如圖2之(d)及(e)所示,第二分離層形成工程係於第一支援板13之單面上,形成照射光線而變質之分離層24之工程。然而,第二之黏著劑層塗佈工程及第二分離層形成工程係在以下說明之第二貼附工程開始前完成即 可,實施兩工程之順序則不限定,並行兩工程加以實施亦可。 As shown in (d) and (e) of FIG. 2, the second separation layer forming process is performed on one surface of the first support plate 13 to form a separation layer 24 which is deteriorated by irradiation with light. However, the second adhesive layer coating process and the second separation layer forming engineering are completed before the start of the second attachment process described below. However, the order in which the two projects are implemented is not limited, and the two projects may be implemented in parallel.

(第二支援板23) (second support board 23)

第二支援板23係支持基板11之支持體。第二支援板23,係隔著第二之黏著劑層22,貼附於基板11。 The second support plate 23 supports the support of the substrate 11. The second support plate 23 is attached to the substrate 11 via the second adhesive layer 22.

第二支援板23,例如於基板11之搬送、覆晶安裝等之製程時,為防止基板11之破損或變形,需具有必要之強度,透過為了變質分離層14之光者即可。由以上觀點視之,做為第二支援板23,與第一支援板13相同,例如可列舉玻璃、矽、丙烯酸系樹脂所成者。 For example, in the process of transporting the substrate 11 or flip chip mounting, the second support plate 23 is required to have the necessary strength to prevent the substrate 11 from being damaged or deformed, and is transmitted through the light for separating the layer 14 . In view of the above, the second support plate 23 is the same as the first support plate 13, and examples thereof include glass, enamel, and acrylic resin.

又,第二支援板係形成分離層24。在此,分離層24係經由吸收隔著第二支援板23所照射之光而變質之材料所形成之層,可使用與形成於第一支援板13之分離層14相同之材料加以形成。 Further, the second support plate forms the separation layer 24. Here, the separation layer 24 is formed of a material which is oxidized by the light irradiated through the second support plate 23, and can be formed of the same material as the separation layer 14 formed on the first support plate 13.

(第二貼附工程) (second attachment project)

如圖2之(f)所示,第二貼附工程中,隔著分離層24與第二之黏著劑層22,貼附第二支援板23與層積體50之基板11。 As shown in FIG. 2(f), in the second attachment process, the substrate 11 of the second support plate 23 and the laminate 50 is attached via the separation layer 24 and the second adhesive layer 22.

第二貼附工程中,經由加熱之一對板構件,使形成於層積體50之基板11之第二之黏著劑層22與形成於第二支援板23之分離層24相向地加以重疊,挾著此等加以貼合亦可。由此,可形成層積體100。然而,第二 貼附工程中,貼附基板11與第二支援板23之貼附溫度、貼附壓力及貼附時間係對應第二之黏著劑層22之種類適切加以調整即可。 In the second attachment process, the second adhesive layer 22 of the substrate 11 formed on the laminate 50 is overlapped with the separation layer 24 formed on the second support plate 23 by heating one of the pair of plate members. It is also possible to fit together. Thereby, the laminated body 100 can be formed. However, the second In the attaching process, the bonding temperature, the attaching pressure, and the attaching time of the attaching substrate 11 and the second supporting plate 23 may be adjusted in accordance with the type of the second adhesive layer 22.

[黏著劑之外周部分除去工程4] [Adhesive peripheral part removal engineering 4]

如圖2之(g)所示,關於一實施形態之處理方法中,於第二貼附工程後,於分離工程之前,除去第一及第二之黏著劑層之至少一方之外周部分。 As shown in FIG. 2(g), in the processing method according to the embodiment, after the second attachment process, at least one of the outer peripheral portions of the first and second adhesive layers is removed before the separation process.

黏著劑之外周部分除去工程4中,使用與黏著劑之外周部分除去工程1~3相同之溶解液,經由相同之方法,除去從層積體100溢出之第一之黏著劑層12或第二之黏著劑層之外周部分即可。又,黏著劑之外周部分除去工程4中,對應第一之黏著劑層12或第二之黏著劑層22從層積體100溢出之程度,適切除去第一之黏著劑層12或第二之黏著劑層22之外周部分即可。由此,可除去附著於第一支援板13之過多之第一之黏著劑層12。因此,在之後之分離工程,於分離層14照射光線之後,可無賦予過度力量,從層積體100分離第一支援板13。又,除去附著於層積體100之外周部分之過多第二之黏著劑層22,將基板11隔著第二之黏著劑層22,經由第二支援板23加以適切支持。又,分離第一支援板13,於支持於第二支援板23之基板11進行期望之處理後,經由於分離層24照射光線之後,可無賦予過度力量,從第二支援板23分離基板11。 In the outer peripheral portion removal process 4 of the adhesive, the first adhesive layer 12 or the second overflowing from the laminate 100 is removed by the same method using the same solution as the outer peripheral portion of the adhesive removal process 1 to 3. The outer part of the adhesive layer can be used. Further, in the outer peripheral portion removing process 4 of the adhesive, the first adhesive layer 12 or the second one is appropriately removed corresponding to the extent that the first adhesive layer 12 or the second adhesive layer 22 overflows from the laminated body 100. The outer peripheral portion of the adhesive layer 22 may be sufficient. Thereby, the excess first adhesive layer 12 adhering to the first support plate 13 can be removed. Therefore, in the subsequent separation process, after the light of the separation layer 14 is irradiated, the first support plate 13 can be separated from the laminated body 100 without imparting excessive force. Further, the excess second adhesive layer 22 adhering to the outer peripheral portion of the laminated body 100 is removed, and the substrate 11 is appropriately supported by the second support sheet 23 via the second adhesive layer 22. Further, the first support plate 13 is separated, and after the substrate 11 supported by the second support plate 23 is subjected to a desired process, after the light is applied to the separation layer 24, the substrate 11 can be separated from the second support plate 23 without applying excessive force. .

(層積體100) (Layer 100)

使用圖3之(a),說明關於一實施形態之處理方法所形成之層積體100之概略。圖3之(a)係說明關於本發明之一實施形態之處理方法所形成之層積體100之概略圖。 The outline of the laminate 100 formed by the processing method of one embodiment will be described with reference to Fig. 3(a). Fig. 3 (a) is a schematic view showing a laminate 100 formed by a processing method according to an embodiment of the present invention.

如圖3(a)所示,層積體100係使第一支援板13、第一之黏著劑層12、基板11、第二之黏著劑層22、分離層24及第二支援板23依此順序加以層積的層積體。在此,如圖3之(a)所示,層積體100係除去第一之黏著劑層12與第二之黏著劑層22之外周部分。又,於第一支援板13與第一之黏著劑層12之間,形成分離層14。 As shown in FIG. 3(a), the laminate 100 is such that the first support plate 13, the first adhesive layer 12, the substrate 11, the second adhesive layer 22, the separation layer 24, and the second support plate 23 are This sequence is a layered laminate. Here, as shown in FIG. 3(a), the laminate 100 removes the outer peripheral portions of the first adhesive layer 12 and the second adhesive layer 22. Further, a separation layer 14 is formed between the first support plate 13 and the first adhesive layer 12.

[分離工程] [Separation Engineering]

使用圖4,對於一實施形態之處理方法所包含之分離工程加以說明。圖4之(a)係說明層積體100之剖面之概略圖。 The separation process included in the processing method of one embodiment will be described with reference to Fig. 4 . Fig. 4 (a) is a schematic view showing a cross section of the laminate 100.

如圖4之(b)所示,關於一實施形態之處理方法所包含之分離工程中,將使分離層14變質之雷射光,照射於分離層14。 As shown in FIG. 4(b), in the separation process included in the processing method of one embodiment, the laser light that has deteriorated the separation layer 14 is irradiated onto the separation layer 14.

分離工程中,無需將層積體100之第一之黏著劑層12經由溶解液加以溶解。為此,可不溶解第二之黏著劑層22,可從層積體100分離第一支援板13。又, 經由隔著第一支援板13照射光線,可使層積體100之分離層14變質(圖4之(c))。因此,可無於層積體100施以大的力量,可適切從層積體100分離第一支援板13(圖4之(d))。為此,將第一支援板13從層積體100分離之時,可防止基板11與第二支援板23之分離。為此,於之後之覆晶安裝等之工程,可將基板11經由第二支援板23適切加以支持。 In the separation process, it is not necessary to dissolve the first adhesive layer 12 of the laminate 100 via the solution. For this reason, the first adhesive sheet 22 can be separated from the laminated body 100 without dissolving the second adhesive layer 22. also, By irradiating light through the first support plate 13, the separation layer 14 of the laminate 100 can be deteriorated (Fig. 4 (c)). Therefore, the first support plate 13 can be separated from the laminated body 100 without applying a large force to the laminated body 100 ((d) of Fig. 4). Therefore, when the first support plate 13 is separated from the laminated body 100, separation between the substrate 11 and the second support plate 23 can be prevented. For this reason, the substrate 11 can be appropriately supported by the second support plate 23 in a subsequent process such as flip chip mounting.

又,於覆晶安裝等之工程後,隔著第二支援板23,將光照射於分離層24,經由使分離層24變質,可無賦予過度力量,從第二支援板23分離基板11。 In addition, after the work such as flip chip mounting, the second support plate 23 is irradiated with light on the separation layer 24, and the separation layer 24 is degraded, whereby the substrate 11 can be separated from the second support plate 23 without applying excessive force.

[其他之實施形態] [Other implementations]

關於本發明之處理方法,係非限定於上述實施形態者。例如,可對應形成第一之黏著劑層12之黏著劑及形成第二之黏著劑層22之黏著劑之塗佈量,成為不進行黏著劑之外周部分除去工程之實施形態。 The treatment method of the present invention is not limited to the above embodiment. For example, the coating amount of the adhesive forming the first adhesive layer 12 and the adhesive forming the second adhesive layer 22 can be an embodiment in which the peripheral portion of the adhesive is not removed.

即,黏著劑之外周部分除去工程1~4中,對應第一之黏著劑層12之塗佈量、第一之黏著劑層12從層積體50溢出之程度,第二之黏著劑層22之塗佈量、第二之黏著劑層22從層積體100溢出之程度等,適切選擇是否進行即可。 That is, in the outer peripheral portion of the adhesive removal process 1 to 4, the second adhesive layer 22 corresponds to the coating amount of the first adhesive layer 12, the first adhesive layer 12 overflowing from the laminate 50, and the second adhesive layer 22. The coating amount, the degree of overflow of the second adhesive layer 22 from the laminate 100, and the like may be appropriately selected or not.

在此,黏著劑之外周部分除去工程1~4中,經由黏著劑之外周部分除去工程3,將第一之黏著劑層12及第二之黏著劑層22經由一個之工程加以除去為最有效 率,最為高優先度,而外周部分除去工程1、2、4則可任意進行。又,僅進行外周部分除去工程2,或僅進行外周部分除去工程2及3亦可。 Here, in the outer peripheral portion removal process 1 to 4 of the adhesive, the process 3 is removed through the outer peripheral portion of the adhesive, and the first adhesive layer 12 and the second adhesive layer 22 are removed by one process to be most effective. The rate is the highest priority, and the removal of the outer part, 1, 2, and 4 can be performed arbitrarily. Further, only the outer peripheral portion removing process 2 or only the outer peripheral portion removing works 2 and 3 may be performed.

使用圖3之(b),對於不進行黏著劑之外周部分除去工程之層積體100’加以說明。如圖3之(b)所示,於層積體100’中,於第一支援板13,亦形成分離層14。因此,於分離工程中,隔著第一支援板13,於分離層14照射光線,可使分離層14變質。因此,可使第一支援板13從層積體100’加以分離。 The layered body 100' which does not perform the peripheral portion removal process of the adhesive will be described with reference to Fig. 3(b). As shown in Fig. 3(b), in the laminated body 100', the separation layer 14 is also formed on the first support plate 13. Therefore, in the separation process, the separation layer 14 is irradiated with light through the first support plate 13, and the separation layer 14 can be deteriorated. Therefore, the first support plate 13 can be separated from the laminated body 100'.

又,關於更為其他之實施形態之處理方法,於第二支援板23,不形成分離層24亦可。即,基板11與第二支援板23,則隔著第二黏著劑層22加以層積,形成層積體亦可。本實施形態中,於基板11進行覆晶晶片安裝等之工程後,可將第二支援板23與基板11,經由在黏著劑之外周部分除去工程使用之溶劑,加以溶解而分離即可。在此,於第二支援板中,於厚度方向設置有貫通孔時,從第二支援板剝離基板11時,隔著此孔,可將溶劑流入支持板與基板之間。為此,可將溶劑有效率地接觸至第二之黏著劑層22,更適切地溶解第二之黏著劑層22。為此,可從第二支援板容易剝離基板11。 Further, in the processing method of still other embodiments, the separation layer 24 may not be formed in the second support plate 23. In other words, the substrate 11 and the second support plate 23 may be laminated via the second adhesive layer 22 to form a laminate. In the present embodiment, after the substrate 11 is subjected to a work such as flip chip mounting, the second support plate 23 and the substrate 11 may be dissolved and separated by removing the solvent used in the outer peripheral portion of the adhesive. Here, in the second support plate, when the through hole is provided in the thickness direction, when the substrate 11 is peeled off from the second support plate, the solvent can flow between the support plate and the substrate via the hole. To this end, the solvent can be efficiently contacted to the second adhesive layer 22 to more effectively dissolve the second adhesive layer 22. For this reason, the substrate 11 can be easily peeled off from the second support sheet.

又,更為其他之實施形態中,第一之黏著劑層塗佈工程係非於基板11塗佈黏著劑,經由於形成分離層14之第一支援板13之該分離層14側之面,塗佈黏著劑,形成第一之黏著劑層亦可。又,第二之黏著劑層塗佈 工程係非於層積體50之基板11塗佈黏著劑,經由於第二支援板塗佈黏著劑,形成第二之黏著劑層亦可。 Further, in still another embodiment, the first adhesive layer coating process does not apply the adhesive to the substrate 11, and passes through the side of the separation layer 14 of the first support plate 13 on which the separation layer 14 is formed. The adhesive may be applied to form a first adhesive layer. Also, the second adhesive layer coating In the engineering system, an adhesive is applied to the substrate 11 of the laminate 50, and an adhesive is applied to the second support plate to form a second adhesive layer.

本發明係非限定於上述各實施形態,在請求項所示之範圍下可做種種之變更,對於在不同之實施形態,將各別揭示之技術手段適切組合所得之實施形態,亦包含於本發明之技術性範圍。 The present invention is not limited to the above embodiments, and various modifications can be made in the scope of the claims. The embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the present invention. The technical scope of the invention.

[實施例] [Examples] [第一支援板之分離性之評估] [Evaluation of Separation of First Support Board]

做為實施例1~9,經由改變黏著劑組成物A~C之組合及貼附工程之條件、形成具備第一支援板、分離層、第一之黏著劑層、晶圓基板、第二之黏著劑層及第二支援板之層積體,評估各層積體之第一支援板之分離性。 As Examples 1 to 9, the first support sheet, the separation layer, the first adhesive layer, the wafer substrate, and the second layer were formed by changing the combination of the adhesive compositions A to C and the conditions of the attachment process. A laminate of the adhesive layer and the second support sheet is used to evaluate the separation of the first support sheets of the respective laminates.

(層積體之形成) (formation of laminate)

經由以下之手續,根據記載於表1之條件,形成實施例1~9。 Examples 1 to 9 were formed according to the conditions described in Table 1 through the following procedures.

首先,進行為形成第一或第二之黏著劑層使用之黏著劑組成物A~C之調製。黏著劑組成物A~C之內容係如下所述。 First, the preparation of the adhesive compositions A to C for forming the first or second adhesive layer is carried out. The contents of the adhesive compositions A to C are as follows.

黏著劑組成物A:TZNR(登錄商標)-A4005(東京應化工業股份有限公司製) Adhesive composition A: TZNR (registered trademark)-A4005 (manufactured by Tokyo Toka Chemical Industry Co., Ltd.)

黏著劑組成物B:TZNR(登錄商標)-A4009(東京應化工業股份有限公司製) Adhesive composition B: TZNR (registered trademark) - A4009 (manufactured by Tokyo Yinghua Industrial Co., Ltd.)

黏著劑組成物C:TZNR(登錄商標)-A4012(東京應化工業股份有限公司製) Adhesive composition C: TZNR (registered trademark) - A4012 (manufactured by Tokyo Yinghua Industrial Co., Ltd.)

接著,如表1所記載,於半導體晶圓基板(12英吋、矽),將黏著劑組成物A~C之任一者,旋塗成為膜厚50μm(第一之黏著劑層塗佈工程),以90℃、160℃、220℃之溫度,各烘烤4分鐘,形成第一之黏著劑層。 Next, as shown in Table 1, the adhesive composition A to C was spin-coated on a semiconductor wafer substrate (12 inches, 矽) to have a film thickness of 50 μm (the first adhesive layer coating project) ), baking at a temperature of 90 ° C, 160 ° C, and 220 ° C for 4 minutes to form a first adhesive layer.

接著,做為第一支援板,使用12英吋玻璃支援板(厚700μm),於該第一支援板上形成分離層(第一分離層形成工程)。做為第一分離層形成工程之條件,在流量400sccm、壓力700mTorr、高頻電力2500W及成膜溫度240℃之條件下,經由進行做為反應氣體,使用C4F8之CVD法,將分離層之碳氟化合物膜(厚1μm),形成於第一支援板上。 Next, as a first support plate, a 12-inch glass support plate (thickness: 700 μm) was used, and a separation layer (first separation layer forming process) was formed on the first support plate. As a condition for the formation of the first separation layer, the separation was carried out by using a C 4 F 8 CVD method under the conditions of a flow rate of 400 sccm, a pressure of 700 mTorr, a high-frequency power of 2,500 W, and a film formation temperature of 240 ° C. A layer of a fluorocarbon film (thickness: 1 μm) was formed on the first support plate.

接著,真空下,根據表1記載之第一貼附溫度條件、貼附壓力條件,於各實施例,使第一支援板、分離層、第一之黏著劑層及晶圓基板依此順序加以層積而貼合層積體(第一貼附工程)。 Next, under vacuum, according to the first attachment temperature condition and the adhesion pressure condition described in Table 1, in the respective embodiments, the first support plate, the separation layer, the first adhesive layer, and the wafer substrate are sequentially applied in this order. Laminated to fit the laminate (first attachment project).

接著,將晶圓基板之背面,於DISCO公司製磨背裝置,進行薄化(50μm)處理(薄化工程)。又,如表1所記載之條件,於各實施例,於晶圓基板之薄化處理之面,將黏著劑組成物成為膜厚50μm加以旋塗(第二之黏著劑層塗佈工程),以90℃、160℃、220℃之溫度,各烘烤4分鐘。 Next, the back surface of the wafer substrate was subjected to a thinning (50 μm) treatment (thinning process) by a grinding apparatus manufactured by DISCO Corporation. Further, in each of the examples, the adhesive composition was spin-coated with a film thickness of 50 μm on the surface of the wafer substrate thinned (the second adhesive layer coating process). Each was baked at a temperature of 90 ° C, 160 ° C, and 220 ° C for 4 minutes.

接著,僅於實施例6~9之層積體,將各層積體,以1500rpm加以旋轉,經由EBR噴嘴,經由將TZNR(登錄商標)HC稀釋劑(東京應化工業股份有限公司製)以10cc/min之供給量,進行5~15分鐘的供給,進行第二之黏著劑層之外周部分之除去(黏著劑之外周部分除去工程)。然而,表1之「黏著劑之外周部除去之寬度(mm)」中,「-」係顯示未進行第二之黏著劑層之外周 部分之除去,各長度係從晶圓基板之端部至第二之黏著劑層之端部的寬度係如該長度,顯示進行第二之黏著劑層之外周部分之除去。 Then, the laminates of the examples 6 to 9 were rotated at 1,500 rpm, and the TZNR (registered trademark) HC thinner (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was passed through the EBR nozzle. The supply amount of /min is supplied for 5 to 15 minutes, and the outer peripheral portion of the second adhesive layer is removed (the outer peripheral portion of the adhesive is removed). However, in the "width (mm) of the periphery of the adhesive outside the adhesive" in Table 1, "-" indicates that the second adhesive layer is not applied. In part, the length of each length from the end of the wafer substrate to the end of the second adhesive layer is such a length, indicating removal of the outer peripheral portion of the second adhesive layer.

接著,真空下,根據表1記載之第二貼附溫度條件、貼附壓力條件,使各層積體之晶圓基板側之面與第二支援板隔著第二之黏著劑層加以黏著而形成層積體(第二貼附工程)。 Then, under the vacuum, according to the second attachment temperature condition and the adhesion pressure condition described in Table 1, the surface of the wafer substrate side of each laminate and the second support sheet are adhered via the second adhesive layer. Laminated body (second attachment project).

對於如上述形成之實施例1~9之層積體,進行隔著第一支援板,於分離層照射光線之分離工程。做為分離工程之條件,於各實施例之層積體,各從第一支援板側,令雷射光之波長為532nm、雷射光之直徑為180μm、雷射脈衝之被照射範圍彼此間之中心間距離為180μm、掃描速度為7200mm/s,以重覆頻率40kHz進行雷射光照射(分離工程)。之後,對於各層積體,評估自第一支援板之層積體的分離性。 With respect to the laminates of Examples 1 to 9 formed as described above, the separation of the light was applied to the separation layer via the first support plate. As a condition for the separation process, the laminates of the respective embodiments are each from the first support plate side such that the wavelength of the laser light is 532 nm, the diameter of the laser light is 180 μm, and the irradiation range of the laser pulse is at the center of each other. The distance between the electrodes was 180 μm and the scanning speed was 7200 mm/s, and laser light irradiation (separation engineering) was performed at a repetition frequency of 40 kHz. Thereafter, the separation property of the laminate from the first support plate was evaluated for each laminate.

(結果) (result)

對於實施例1~9之任一層積體,無需大的施力,可經由層積體之自重,使第一支援板分離。 With respect to any of the laminates of Examples 1 to 9, the first support plate can be separated by the self-weight of the laminate without requiring a large force.

[產業上之可利用性] [Industrial availability]

本發明係例如於微細化之半導體裝置之製造工程中,可廣泛地加以利用。 The present invention can be widely used, for example, in the manufacturing process of a miniaturized semiconductor device.

Claims (6)

一種處理方法,其特徵係包含:於設有設置經由光之照射變質之第一之分離層之第一支持體之該第一分離層之面,隔著第一之黏著劑層,貼附基板的第一貼附工程、和第一貼附工程之後,在背向於貼附上述基板之第一支持體面之面,隔著第二之黏著劑層及第二之分離層,成為上述基板,上述第二之黏著劑層、上述第二之分離層、第二支持體之順序,貼附第二支持體的第二貼附工程、和第二貼附工程之後,於上述第一之分離層經由照射光線,變質該第一之分離層,分離第一支持體與基板之分離工程。 A processing method comprising: affixing a substrate to a surface of the first separation layer of a first support provided with a first separation layer that is modified by irradiation of light, via a first adhesive layer After the first attachment process and the first attachment process, the substrate is placed on the surface facing away from the first support surface of the substrate, via the second adhesive layer and the second separation layer. The second adhesive layer, the second separation layer, and the second support are attached to the first separation layer after the second attachment process of the second support and the second attachment process The first separation layer is deteriorated by irradiation of light, and the separation of the first support from the substrate is separated. 如申請專利範圍第1項記載之處理方法,其中,更包含於第二貼附工程之前,於上述基板及上述第二支持體之至少一方,塗佈黏著劑,形成第二之黏著劑層的第二之黏著劑層塗佈工程;第二之黏著劑塗佈工程之後,於第二貼附工程之前,除去第一之黏著劑層及第二之黏著劑層之外周部分。 The method according to claim 1, further comprising applying an adhesive to at least one of the substrate and the second support to form a second adhesive layer before the second attachment process The second adhesive layer coating process; after the second adhesive coating process, the outer portions of the first adhesive layer and the second adhesive layer are removed prior to the second attachment process. 如申請專利範圍第1或2項記載之處理方法,其中,包含在於第一貼附工程之前,於第一支持體及基板之至少一方,塗佈黏著劑,形成第一之黏著劑層的第一之黏著劑塗佈工程;第一之黏著劑塗佈工程之後,於第一貼附工程之前,除去第一之黏著劑層之外周部分。 The method according to claim 1 or 2, further comprising applying an adhesive to at least one of the first support and the substrate to form a first adhesive layer before the first attachment process An adhesive coating process; after the first adhesive coating process, the outer peripheral portion of the first adhesive layer is removed prior to the first attachment process. 如申請專利範圍第1或2項記載之處理方法,其 中,第二貼附工程之後,分離工程之前,除去第一及第二之黏著劑層之至少一方之外周部分。 The processing method described in claim 1 or 2 of the patent application, After the second attachment process, at least one of the outer peripheral portions of the first and second adhesive layers is removed before the separation process. 如申請專利範圍第1或2項記載之處理方法,其中,第一貼附工程之後,第二貼附工程之前,更包含薄化背向於貼附上述基板之第一支持體之面的薄化工程。 The processing method according to claim 1 or 2, wherein, after the first attaching process, before the second attaching process, further comprising thinning the surface of the first support facing away from the substrate Chemical engineering. 如申請專利範圍第1或2項記載之處理方法,其中,於上述分離工程中,將使上述第一之分離層變質之雷射光,照射於該第一之分離層。 The processing method according to the first or second aspect of the invention, wherein, in the separating process, the laser light which modifies the first separation layer is irradiated onto the first separation layer.
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