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TWI614249B - Charge transport varnish, charge transporting film and organic electroluminescent element - Google Patents

Charge transport varnish, charge transporting film and organic electroluminescent element Download PDF

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TWI614249B
TWI614249B TW103134001A TW103134001A TWI614249B TW I614249 B TWI614249 B TW I614249B TW 103134001 A TW103134001 A TW 103134001A TW 103134001 A TW103134001 A TW 103134001A TW I614249 B TWI614249 B TW I614249B
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Naoki Nakaie
Taichi Nakazawa
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Nissan Chemical Ind Ltd
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Abstract

本發明係提供一種適用於有機EL元件之電洞注入層時,賦予可實現優異的亮度特性之薄膜的電荷輸送性清漆、電荷輸送性薄膜及有機EL元件。 The present invention provides a charge-transporting varnish, a charge-transporting film, and an organic EL element that provide a film capable of achieving excellent brightness characteristics when applied to a hole injection layer of an organic EL element.

本發明之電荷輸送性清漆,其特徵係含有由式(1)表示之噻吩衍生物所構成之電荷輸送性物質、摻雜物及有機溶劑。 The charge-transporting varnish of the present invention is characterized by containing a charge-transporting substance composed of a thiophene derivative represented by formula (1), a dopant, and an organic solvent.

(式中,R1~R21各自獨立表示氫原子、鹵素原子、硝基、氰基、醛基、羥基、硫醇基、羧酸基、烷基、烯基、炔基、碳數6~20之芳基、-C(O)Y1基、-OY2基、-SY3基、-C(O)OY4基、-OC(O)Y5基、-C(O)NHY6基或-C(O)NY7Y8基。) (Wherein R 1 to R 21 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a carboxylic acid group, an alkyl group, an alkenyl group, an alkynyl group, and a carbon number of 6 to 20 aryl group, -C (O) Y 1 group, -OY 2 group, -SY 3 group, -C (O) OY 4 group, -OC (O) Y 5 group, -C (O) NHY 6 group Or -C (O) NY 7 Y 8 base.)

Description

電荷輸送性清漆、電荷輸送性薄膜及有機電致發光元件 Charge-transporting varnish, charge-transporting film, and organic electroluminescent device

本發明係有關電荷輸送性清漆、電荷輸送性薄膜及有機電致發光(以下稱為有機EL)元件。 The present invention relates to a charge-transporting varnish, a charge-transporting film, and an organic electroluminescence (hereinafter referred to as an organic EL) element.

有機EL元件中,可使用由有機化合物所構成的電荷輸送性薄膜作為發光層或電荷注入層。特別是電洞注入層係擔任陽極與電洞輸送層或發光層之電荷之授受,達成有機EL元件之低電壓驅動及高亮度,具有重要的機能。 In the organic EL device, a charge-transporting thin film made of an organic compound can be used as a light-emitting layer or a charge-injection layer. In particular, the hole injection layer serves as the transfer of charge between the anode and the hole transporting layer or the light emitting layer, and achieves low voltage driving and high brightness of the organic EL element, and has important functions.

電洞注入層之形成方法,大致區分為以蒸鍍法所代表之乾式製程與以旋轉塗佈法所代表的濕式製程,相對於此等製程時,濕式製程可較有效率製造大面積平坦性高的薄膜。因此,有機EL顯示器之大面積化發展的現在,期望可以濕式製程形成的電洞注入層。 The formation method of the hole injection layer can be roughly divided into a dry process represented by the evaporation method and a wet process represented by the spin coating method. Compared to these processes, the wet process can efficiently produce a large area. High flatness film. Therefore, with the development of large-scale organic EL displays, a hole injection layer that can be formed by a wet process is expected.

有鑑於此情形,本發明人等開發了可適用於各種濕式製程,同時提供適用於有機EL元件之電洞注入層時,可實現優異的EL元件特性之薄膜的電荷輸送性材料或對於用於該材料之有機溶劑之溶解性良好的化合物 (參照例如專利文獻1~4)。 In view of this situation, the present inventors have developed a charge-transporting material or a thin-film charge-transporting material that can be applied to various wet processes and also provides a hole injection layer suitable for an organic EL element, which can achieve excellent EL element characteristics. Compounds with good solubility in organic solvents for this material (See, for example, Patent Documents 1 to 4).

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2008/032616號 [Patent Document 1] International Publication No. 2008/032616

[專利文獻2]國際公開第2008/129947號 [Patent Document 2] International Publication No. 2008/129947

[專利文獻3]國際公開第2006/025342號 [Patent Document 3] International Publication No. 2006/025342

[專利文獻4]國際公開第2010/058777號 [Patent Document 4] International Publication No. 2010/058777

[發明概要] [Invention Summary]

本發明係與以往所開發之上述專利文獻的技術同樣,本發明之目的係提供適用於有機EL元件之電洞注入層時,賦予可實現優異的特性之薄膜的電荷輸送性清漆。 The present invention is the same as the technology of the above-mentioned patent documents developed in the past, and an object of the present invention is to provide a charge-transporting varnish that imparts a thin film capable of achieving excellent characteristics when applied to a hole injection layer of an organic EL element.

本發明人等為了達成上述目的,精心研討的結果,發現含有由特定之噻吩衍生物所構成之電荷輸送性物質、摻雜物及有機溶劑的清漆所得的薄膜具有高電荷輸送性,該薄膜適用於有機EL元件之電洞注入層時,可實現優異的亮度特性及優異的耐久性,遂完成本發明。 In order to achieve the above-mentioned object, the present inventors have conducted careful research and found that a thin film obtained from a varnish containing a charge-transporting substance composed of a specific thiophene derivative, a dopant, and an organic solvent has high charge-transporting properties, and the film is suitable In the hole injection layer of the organic EL element, excellent brightness characteristics and excellent durability can be achieved, and the present invention has been completed.

亦即,本發明係提供下述電荷輸送性清漆、電荷輸送性薄膜及有機EL元件。 That is, the present invention provides the following charge-transporting varnish, charge-transporting film, and organic EL device.

1.一種電荷輸送性清漆,其特徵係含有由式(1)表示之噻吩衍生物所構成之電荷輸送性物質、摻雜物及有機溶劑。 A charge-transporting varnish comprising a charge-transporting substance, a dopant, and an organic solvent composed of a thiophene derivative represented by formula (1).

Figure TWI614249BD00001
(式中,R1~R21各自獨立表示氫原子、鹵素原子、硝基、氰基、醛基、羥基、硫醇基、羧酸基、可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基、可經Z2取代之碳數6~20之芳基、-C(O)Y1基、-OY2基、-SY3基、-C(O)OY4基、-OC(O)Y5基、-C(O)NHY6基或-C(O)NY7Y8基,Y1~Y8各自獨立表示可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基或可經Z2取代之碳數6~20之芳基,Z1表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基或可經Z3取代之碳數6~20之芳基,Z2表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z3取代之碳數1~20之烷基、 可經Z3取代之碳數2~20之烯基或可經Z3取代之碳數2~20之炔基,Z3表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基或羧酸基,n1~n3各自獨立表示2~10之整數)。
Figure TWI614249BD00001
(Wherein R 1 to R 21 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a carboxylic acid group, and an alkane having 1 to 20 carbon atoms which may be substituted by Z 1 group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with an alkynyl group of a carbon number of 2 to 20, Z 2 may be substituted having 6 to 20 carbon atoms of the aryl group, -C ( O) Y 1 group, -OY 2 group, -SY 3 group, -C (O) OY 4 group, -OC (O) Y 5 group, -C (O) NHY 6 group, or -C (O) NY 7 group Y 8, Y 1 ~ Y 8 each independently represent Z 1 may be substituted having 1 to 20 carbon atoms of the alkyl group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with a carbon number of An alkynyl group of 2 to 20 or an aryl group of 6 to 20 carbon atoms that can be substituted by Z 2 ; Z 1 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, and a carboxylic acid group Or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 3 , Z 2 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, and may be substituted by Z 3 Alkyl group having 1 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms which can be substituted with Z 3 or alkynyl group having 2 to 20 carbon atoms which can be substituted with Z 3 , Z 3 represents a halogen atom, a nitro group, a cyanide Group, aldehyde group, hydroxyl group, thiol group, sulfone Group or a carboxylic acid group, n 1 ~ n 3 each independently represents an integer of from 2 to 10).

2.如前述第1項之電荷輸送性清漆,其中上述摻雜物包含雜多酸。 2. The charge-transporting varnish according to the aforementioned item 1, wherein the dopant contains a heteropolyacid.

3.如前述第1或2項之電荷輸送性清漆,其係再包含有機矽烷化合物。 3. The charge-transporting varnish according to item 1 or 2 above, further comprising an organosilane compound.

4.如前述第1~3項中任一項之電荷輸送性清漆,其係再包含下述式(6)表示之四氰基苯醌二甲烷化合物,

Figure TWI614249BD00002
(式中,R101~R104各自獨立表示氫原子或鹵素原子,但至少1個為鹵素原子)。 4. The charge-transporting varnish according to any one of items 1 to 3 above, which further comprises a tetracyanobenzoquinone dimethane compound represented by the following formula (6),
Figure TWI614249BD00002
(In the formula, R 101 to R 104 each independently represent a hydrogen atom or a halogen atom, but at least one is a halogen atom.)

5.一種電荷輸送性薄膜,其特徵係使用如前述第1~4項中任一項之電荷輸送性清漆所製作。 5. A charge-transporting film characterized by using the charge-transporting varnish according to any one of items 1 to 4 above.

6.一種有機電致發光元件,其特徵係具有如前述第5項之電荷輸送性薄膜。 6. An organic electroluminescence device, comprising the charge-transporting film according to item 5 above.

7.如前述第6項之有機電致發光元件,其中上述電荷輸送性薄膜為電洞注入層或電洞輸送層。 7. The organic electroluminescent device according to the aforementioned item 6, wherein the charge transporting film is a hole injection layer or a hole transport layer.

8.一種電荷輸送性薄膜之製造方法,其特徵係將如前述第1~4項中任一項之電荷輸送性清漆塗佈於基材上進行 燒成者。 8. A method for manufacturing a charge-transporting film, characterized in that the charge-transporting varnish according to any one of the foregoing items 1 to 4 is applied to a substrate Burners.

9.一種有機電致發光元件之製造方法,其特徵係使用如前述第4項之電荷輸送性薄膜。 9. A method for manufacturing an organic electroluminescence device, characterized by using the charge-transporting film as described in item 4 above.

10.一種電荷輸送性材料,其特徵係含有由式(1)表示之噻吩衍生物所構成之電荷輸送性物質及摻雜物,

Figure TWI614249BD00003
(式中,R1~R21各自獨立表示氫原子、鹵素原子、硝基、氰基、醛基、羥基、硫醇基、羧酸基、可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基、可經Z2取代之碳數6~20之芳基、-C(O)Y1基、-OY2基、-SY3基、-C(O)OY4基、-OC(O)Y5基、-C(O)NHY6基或-C(O)NY7Y8基,Y1~Y8各自獨立表示可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基或可經Z2取代之碳數6~20之芳基,Z1表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基或可經Z3取代之碳數6~20之芳基,Z2表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z3取代之碳數1~20之烷基、 可經Z3取代之碳數2~20之烯基或可經Z3取代之碳數2~20之炔基,Z3表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基或羧酸基,n1~n3各自獨立表示2~10之整數)。 10. A charge-transporting material characterized by containing a charge-transporting substance and a dopant composed of a thiophene derivative represented by formula (1),
Figure TWI614249BD00003
(Wherein R 1 to R 21 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a carboxylic acid group, and an alkane having 1 to 20 carbon atoms which may be substituted by Z 1 group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with an alkynyl group of a carbon number of 2 to 20, Z 2 may be substituted having 6 to 20 carbon atoms of the aryl group, -C ( O) Y 1 group, -OY 2 group, -SY 3 group, -C (O) OY 4 group, -OC (O) Y 5 group, -C (O) NHY 6 group, or -C (O) NY 7 group Y 8, Y 1 ~ Y 8 each independently represent Z 1 may be substituted having 1 to 20 carbon atoms of the alkyl group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with a carbon number of An alkynyl group of 2 to 20 or an aryl group of 6 to 20 carbon atoms that can be substituted by Z 2 ; Z 1 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, and a carboxylic acid group Or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 3 , Z 2 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, and may be substituted by Z 3 Alkyl group having 1 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms which can be substituted with Z 3 or alkynyl group having 2 to 20 carbon atoms which can be substituted with Z 3 , Z 3 represents a halogen atom, a nitro group, a cyanide Group, aldehyde group, hydroxyl group, thiol group, sulfone Group or a carboxylic acid group, n 1 ~ n 3 each independently represents an integer of from 2 to 10).

本發明使用的噻吩衍生物容易溶於有機溶劑中,噻吩衍生物與摻雜物一同溶解於有機溶劑中,可容易調製電荷輸送性清漆。 The thiophene derivative used in the present invention is easily soluble in an organic solvent, and the thiophene derivative is dissolved in an organic solvent together with the dopant, and the charge-transporting varnish can be easily prepared.

由本發明之電荷輸送性清漆製作的薄膜顯示高的電荷輸送性,因此,可適用於有機EL元件為首之電子裝置用薄膜。特別是此薄膜適用於有機EL元件之電洞注入層,可得到亮度特性與耐久性優異的有機EL元件。 Since the thin film produced from the charge-transporting varnish of the present invention exhibits high charge-transporting properties, it can be applied to films for electronic devices including organic EL elements. In particular, this film is suitable for a hole injection layer of an organic EL element, and an organic EL element having excellent brightness characteristics and durability can be obtained.

此外,本發明之電荷輸送性清漆係因含有有機矽烷化合物或四氰基苯醌二甲烷化合物,因此可以比以往更低溫進行燒成,此時製作的薄膜具有高平坦性及高電荷輸送性。 In addition, since the charge-transporting varnish of the present invention contains an organic silane compound or a tetracyanobenzoquinone dimethane compound, it can be fired at a lower temperature than in the past. The film produced at this time has high flatness and high charge-transportability.

又,本發明之電荷輸送性清漆,即使使用旋轉塗佈法或狹縫塗佈法等、可大面積成膜之各種濕式製程時,也可再現性良好製造電荷輸送性優異的薄膜,因此,也可充分因應近年有機EL元件領域的進展。 In addition, the charge-transporting varnish of the present invention has good reproducibility and produces a film having excellent charge-transportability even when various wet processes capable of forming a large area are formed using a spin coating method, a slit coating method, or the like. , Can also fully respond to the recent progress in the field of organic EL elements.

此外,由本發明之電荷輸送性清漆所得之薄膜,也可作為防靜電膜或有機薄膜太陽能電池之陽極緩衝層等使 用。 In addition, the film obtained from the charge-transporting varnish of the present invention can also be used as an antistatic film or an anode buffer layer for an organic thin-film solar cell. use.

[實施發明的形態] [Mode for Carrying Out the Invention] [電荷輸送性物質] [Charge-transporting substance]

本發明之電荷輸送性清漆係含有由下述式(1)表示之噻吩衍生物所構成之電荷輸送性物質。 The charge-transporting varnish of the present invention contains a charge-transporting substance composed of a thiophene derivative represented by the following formula (1).

本發明中,電荷輸送性係指與導電性同義,與電洞輸送性同義。電荷輸送性物質係可為其自身具有電荷輸送性者,亦可為與電子受容性物質一同使用時具有電荷輸送性者。電荷輸送性清漆係可為其自身具有電荷輸送性者,亦可為藉其所得之固形膜為具有電荷輸送性者。 In the present invention, the charge transportability is synonymous with conductivity and synonymous with hole transportability. The charge-transporting substance may be a substance having a charge-transporting property in itself or a substance having a charge-transporting property when used with an electron-accepting substance. The charge-transporting varnish may be one having a charge-transporting property by itself, or a solid film obtained by using the charge-transporting varnish.

Figure TWI614249BD00004
Figure TWI614249BD00004

R1~R21各自獨立表示氫原子、鹵素原子、硝基、氰基、醛基、羥基、硫醇基、羧酸基、可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基、可經Z2取代之碳數6~20之芳基、-C(O)Y1基、-OY2基、-SY3基、-C(O)OY4 基、-OC(O)Y5基、-C(O)NHY6基或-C(O)NY7Y8基。 R 1 to R 21 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a carboxylic acid group, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , Z 1 substituted alkenyl group with 2 to 20 carbon atoms, Z 1 substituted carbon group with 2 to 20 alkynyl group, Z 2 substituted carbon group with 6 to 20 aryl group, -C (O) Y 1 Group, -OY 2 group, -SY 3 group, -C (O) OY 4 group, -OC (O) Y 5 group, -C (O) NHY 6 group, or -C (O) NY 7 Y 8 group.

Y1~Y8各自獨立表示可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基或可經Z2取代之碳數6~20之芳基。 Y 1 ~ Y 8 each independently represent an alkyl group may be substituted with Z 1 of the carbon atoms of 1 to 20, Z 1 may be substituted with the carbon atoms of the alkenyl group having 2 to 20, may be substituted with Z 1 of the 2 to 20 carbon atoms Alkynyl or aryl having 6 to 20 carbon atoms which may be substituted by Z 2 .

Z1表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基或可經Z3取代之碳數6~20之芳基。 Z 1 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 3 .

Z2表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z3取代之碳數1~20之烷基、可經Z3取代之碳數2~20之烯基或可經Z3取代之碳數2~20之炔基。 Z 2 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, Z 3 may be substituted with an alkyl group of 1 to 20 carbon atoms, the substituent of Z 3 may be Alkenyl group having 2 to 20 carbon atoms or alkynyl group having 2 to 20 carbon atoms which can be substituted by Z 3 .

Z3表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基或羧酸基。 Z 3 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, or a carboxylic acid group.

n1~n3各自獨立表示2~10之整數。 n 1 to n 3 each independently represent an integer of 2 to 10.

鹵素原子例如有氟、氯、溴、碘原子等。 Examples of the halogen atom include fluorine, chlorine, bromine, and iodine atoms.

碳數1~20之烷基,可為直鏈狀、分支鏈狀、環狀之任一者,列舉例如:甲基、乙基、n-丙基、異丙基、n-丁基、異丁基、s-丁基、t-丁基、n-戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基等之碳數1~20之直鏈或分支鏈狀烷基;環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環壬基、環癸基、雙環丁基、雙環戊基、雙環己基、雙環庚基、雙環辛基、雙環壬基、雙環癸基等之碳數3~20之環狀烷基等。 The alkyl group having 1 to 20 carbon atoms may be linear, branched, or cyclic. Examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, and iso. Butyl, s-butyl, t-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, etc. Chain or branched chain alkyl; cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, bicyclobutyl, dicyclopentyl, dicyclohexyl, Bicycloheptyl, bicyclooctyl, bicyclononyl, bicyclodecyl, and the like having a cyclic alkyl group having 3 to 20 carbon atoms.

碳數2~20之烯基之具體例,列舉例如:乙烯 基、n-1-丙烯基、n-2-丙烯基、1-甲基乙烯基、n-1-丁烯基、n-2-丁烯基、n-3-丁烯基、2-甲基-1-丙烯基、2-甲基-2-丙烯基、1-乙基乙烯基、1-甲基-1-丙烯基、1-甲基-2-丙烯基、n-1-戊烯基、n-1-癸烯基、n-1-二十烯基等。 Specific examples of alkenyl groups having 2 to 20 carbon atoms, for example: ethylene Group, n-1-propenyl, n-2-propenyl, 1-methylvinyl, n-1-butenyl, n-2-butenyl, n-3-butenyl, 2-methyl 1-propenyl, 2-methyl-2-propenyl, 1-ethylvinyl, 1-methyl-1-propenyl, 1-methyl-2-propenyl, n-1-pentene , N-1-decenyl, n-1-icosenyl, and the like.

碳數2~20之炔基之具體例,列舉例如:乙炔基、n-1-丙炔基、n-2-丙炔基、n-1-丁炔基、n-2-丁炔基、n-3-丁炔基、1-甲基-2-丙炔基、n-1-戊炔基、n-2-戊炔基、n-3-戊炔基、n-4-戊炔基、1-甲基-n-丁炔基、2-甲基-n-丁炔基、3-甲基-n-丁炔基、1,1-二甲基-n-丙炔基、n-1-己炔基、n-1-癸炔基、n-1-十五炔基、n-1-二十炔基等。 Specific examples of the alkynyl group having 2 to 20 carbon atoms include ethynyl, n-1-propynyl, n-2-propynyl, n-1-butynyl, n-2-butynyl, n-3-butynyl, 1-methyl-2-propynyl, n-1-pentynyl, n-2-pentynyl, n-3-pentynyl, n-4-pentynyl , 1-methyl-n-butynyl, 2-methyl-n-butynyl, 3-methyl-n-butynyl, 1,1-dimethyl-n-propynyl, n- 1-hexynyl, n-1-decynyl, n-1-pentadeynyl, n-1-icosynyl and the like.

碳數6~20之芳基之具體例,列舉例如:苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲基、3-菲基、4-菲基、9-菲基等。 Specific examples of aryl groups having 6 to 20 carbon atoms include phenyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, 1-phenanthryl, 2- Fickey, 3-Ficky, 4-Ficky, 9-Ficky, etc.

R1~R21較佳為氫原子或可經Z1取代之碳數1~20之烷基,最佳為氫原子。 R 1 to R 21 are preferably a hydrogen atom or an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , and most preferably a hydrogen atom.

又,R1~R21及Y1~Y8為烷基、烯基、炔基或芳基時,Z1較佳為鹵素原子或可經Z3取代之碳數6~20之芳基,更佳為可經Z3取代之苯基,最佳為不存在(亦即、非取代)。 When R 1 to R 21 and Y 1 to Y 8 are an alkyl group, an alkenyl group, an alkynyl group, or an aryl group, Z 1 is preferably a halogen atom or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 3 . More preferred is phenyl which may be substituted by Z 3 , and most preferred is absent (ie, non-substituted).

Z2較佳為鹵素原子或可經Z3取代之碳數1~20之烷基、更佳為可經Z3取代之碳數1~10之烷基、又更佳為可經Z3取代之碳數1~8之烷基、又更佳為可經Z3取代之碳數1~6之烷基、最佳為不存在(亦即、非取代)。 Z 2 is preferably a halogen atom or an alkyl group substituted by Z 3 of the carbon atoms of 1 to 20, more preferably a carbon number of Z 3 may be substituted with the alkyl group of 1 to 10, and more preferably may be substituted with Z 3 An alkyl group having 1 to 8 carbon atoms, and more preferably an alkyl group having 1 to 6 carbon atoms which can be substituted by Z 3 , is most preferably absent (ie, non-substituted).

Z3較佳為鹵素原子、更佳為氟、最佳為不存在(亦 即、非取代)。 Z 3 is preferably a halogen atom, more preferably fluorine, and most preferably non-existent (ie, non-substituted).

以下,列舉式(1)表示之噻吩衍生物之具體例,但是不限於此等。 Specific examples of the thiophene derivative represented by the formula (1) are listed below, but are not limited thereto.

Figure TWI614249BD00005
Figure TWI614249BD00005

[噻吩衍生物之製造方法] [Production method of thiophene derivative]

本發明使用的噻吩衍生物,可依據例如Tetrahedron Letters,2010,51(50),pp.6673-6676、特開2003-167972號公報等所記載的方法合成,但是不受此等限定。 The thiophene derivative used in the present invention can be synthesized according to methods described in, for example, Tetrahedron Letters, 2010, 51 (50), pp. 6673-6676, JP 2003-167972, and the like, but is not limited thereto.

具體而言,例如以三苯基胺或其衍生物及噻吩或其衍生物作為出發原料,可藉由熊田偶合(coupling)、右田‧小杉‧史帝勒耦合(Stille Coupling)、根岸偶合、鈴木‧宮浦偶合、檜山偶合等之偶合反應來合成。 Specifically, for example, triphenylamine or its derivative and thiophene or its derivative are used as starting materials. Coupling, Rightfield, Kosugi, Stille Coupling, Negishi coupling, Suzuki ‧Synthesis by coupling reaction of Miyaura coupling, Laoshan coupling, etc.

舉一例,將式(2)表示之三苯基胺或其衍生物進行鹵化或錫化(stannylation)等,為了使與此交叉偶合(cross-coupling)反應,式(3)~(5)表示之噻吩衍生物進行錫化等或鹵化,使偶合反應即可。 For example, triphenylamine or a derivative thereof represented by the formula (2) is subjected to halogenation or stylization, etc. In order to make a cross-coupling reaction with this, the formulae (3) to (5) are represented The thiophene derivative may be subjected to tinization or the like, or halogenated, and the coupling reaction may be performed.

Figure TWI614249BD00006
(式中,R1~R21及n1~n3係與上述相同。)
Figure TWI614249BD00006
(In the formula, R 1 to R 21 and n 1 to n 3 are the same as above.)

此時,式(3)~(5)表示之噻吩或其衍生物之投入比,通常相對於式(2)表示之三苯基胺或其衍生物,分別為0.5~1.5當量程度,較佳為0.9~1.3當量程度。 At this time, the input ratio of the thiophene or its derivative represented by the formulas (3) to (5) is generally about 0.5 to 1.5 equivalents relative to the triphenylamine or its derivative represented by the formula (2), respectively. It is about 0.9 ~ 1.3 equivalent.

式(2)~(5)表示之化合物可為市售品,也可以習知方法合成。 The compounds represented by the formulae (2) to (5) may be commercially available products, or they may be synthesized by conventional methods.

[摻雜物] [Dopant]

本發明之電荷輸送性清漆含有摻雜物。摻雜物無特別限定,可使用有機系之摻雜物、無機系之摻雜物之任一者。 The charge-transporting varnish of the present invention contains a dopant. The dopant is not particularly limited, and either an organic dopant or an inorganic dopant can be used.

其中,最佳的態樣,本發明之電荷輸送性清漆含有雜多酸作為摻雜物,因此,可得到不僅顯示由銦錫氧化物(ITO)、銦鋅氧化物(IZO)所代表之透明電極之高電洞接受能,且亦顯示由鋁所代表之金屬陽極之高電洞接受能之電荷輸送性優異的薄膜。 Among them, in the best aspect, the charge-transporting varnish of the present invention contains a heteropoly acid as a dopant, and therefore, it is possible to obtain not only the transparency represented by indium tin oxide (ITO), indium zinc oxide (IZO), etc. A thin film having high hole-receiving energy of an electrode and excellent charge-transporting property of high hole-receiving energy of a metal anode represented by aluminum.

雜多酸係指代表性以式(A1)表示之Keggin型或以式(A2)表示之Dawson型之化學結構所表示,具 有雜原子位於分子的中心之結構,且釩(V)、鉬(Mo)、鎢(W)等之含氧酸(oxoacid)的同素聚合酸(isopoly acid)、與異種元素之含氧酸進行縮合而成的聚酸。這種異種元素之含氧酸,主要可舉例如矽(Si)、磷(P)、砷(As)的含氧酸。 Heteropoly acid refers to the chemical structure represented by the Keggin type represented by the formula (A1) or the Dawson type represented by the formula (A2). A structure in which a heteroatom is located at the center of the molecule, and oxoacid, isopoly acid, and polyoxo acid of different elements Polyacid obtained by condensation. The oxyacids of such heterogeneous elements include, for example, oxyacids of silicon (Si), phosphorus (P), and arsenic (As).

Figure TWI614249BD00007
Figure TWI614249BD00007

雜多酸之具體例,舉例如:磷鉬酸、矽鉬酸、磷鎢酸、矽鎢酸、磷鎢鉬酸等。此等可單獨使用,亦可組合2種以上使用。又,在本發明使用的雜多酸,可以市售品取得,又,亦可藉由習知方法來合成。 Specific examples of the heteropoly acid include, for example, phosphomolybdic acid, silomomolybdic acid, phosphotungstic acid, silototungstic acid, phosphotungstic molybdic acid, and the like. These can be used alone or in combination of two or more. The heteropolyacid used in the present invention can be obtained from a commercially available product, and can also be synthesized by a conventional method.

特別是摻雜物為1種類的雜多酸所構成時,其1種類的雜多酸較佳為磷鎢酸或磷鉬酸,更佳為磷鎢酸。又,摻雜物為由2種類以上的雜多酸所構成時,其2種類以上的雜多酸之至少一者,以磷鎢酸或磷鉬酸為佳,更佳為磷鎢酸。 In particular, when the dopant is composed of one type of heteropoly acid, the one type of heteropoly acid is preferably phosphotungstic acid or phosphomolybdic acid, and more preferably phosphotungstic acid. When the dopant is composed of two or more types of heteropolyacid, at least one of the two or more types of heteropolyacid is preferably phosphotungstic acid or phosphomolybdic acid, and more preferably phosphotungstic acid.

又,雜多酸在元素分析等的定量分析中,由一般式所示之構造,即使元素數量較多或較少者,只要是以市售品取得者,或依據習知合成方法而適當合成者時,皆可用於本發明。 In addition, the heteropolyacid has a structure represented by a general formula in quantitative analysis such as elemental analysis, and even if the number of elements is large or small, as long as it is obtained from a commercially available product or appropriately synthesized according to a conventional synthesis method In either case, it can be used in the present invention.

亦即,例如一般磷鎢酸係以化學式 H3(PW12O40)‧nH2O表示,磷鉬酸係以化學式H3(PMo12O40)‧nH2O表示,但在定量分析中,即使此式中之P(磷)、O(氧)或W(鎢)或Mo(鉬)的數量多或少者,只要是其為以市售品取得,或依據習知合成方法而適當合成者時,皆可用於本發明。此時,本發明所規定之雜多酸的質量,非指合成物或市售品中之純粹的磷鎢酸之質量(磷鎢酸含量),而是指可以市售品取得之形態及以習知合成法可分離的形態中,包含水合水或其他雜質等狀態的全質量。 That is, for example, the general phosphotungstic acid is represented by the chemical formula H 3 (PW 12 O 40 ) ‧nH 2 O, and the phosphomolybdic acid is represented by the chemical formula H 3 (PMo 12 O 40 ) ‧nH 2 O, but in the quantitative analysis , Even if the amount of P (phosphorus), O (oxygen), W (tungsten), or Mo (molybdenum) in this formula is more or less, as long as it is obtained from a commercially available product, or according to a conventional synthesis method, it is appropriate All synthesizers can be used in the present invention. At this time, the mass of the heteropolyacid specified in the present invention does not refer to the mass of pure phosphotungstic acid (phosphotungstic acid content) in the composition or the commercially available product, but refers to the form and commercially available product. In the form that can be separated by the conventional synthesis method, it contains the full mass of hydrated water or other impurities.

本發明之電荷輸送性清漆所包含的雜多酸,以質量比表示,相對於電荷輸送性物質1,可設為1.0~70.0左右,較佳為2.0~60.0左右,更佳為2.5~55.0左右,又更佳為2.5~25.0左右。 The heteropoly acid contained in the charge-transporting varnish of the present invention is expressed by mass ratio, and can be set to about 1.0 to 70.0, preferably about 2.0 to 60.0, and more preferably about 2.5 to 55.0 relative to the charge transporting substance 1. , And more preferably about 2.5 ~ 25.0.

[有機溶劑] [Organic solvents]

調製電荷輸送性清漆時所用的有機溶劑,可使用可良好溶解電荷輸送性物質及摻雜物的高溶解性溶劑。 As the organic solvent used in the preparation of the charge-transporting varnish, a highly soluble solvent that can well dissolve the charge-transporting substance and the dopant can be used.

這種高溶解性溶劑,可使用例如N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯烷酮、1,3-二甲基-2-咪唑啉酮等的有機溶劑。此等溶劑可單獨使用1種或2種以上混合使用,其使用量係相對於清漆所使用的溶劑全體,可為5~100質量%。 As such a highly soluble solvent, for example, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazoline can be used. Organic solvents such as ketones. These solvents can be used singly or in combination of two or more kinds. The amount of the solvent used is 5 to 100% by mass based on the entire solvent used in the varnish.

又,電荷輸送性物質及摻雜物皆完全溶解於上述溶劑較佳。 Moreover, it is preferable that both the charge transporting substance and the dopant are completely dissolved in the solvent.

又,本發明中,藉由使清漆含有至少1種類在25℃下具有10~200mPa‧s、特別是35~150mPa‧s之黏度,且在常壓(大氣壓)下沸點為50~300℃、特別是150~250℃之高黏度的機溶劑,清漆之黏度的調整變得容易,結果,可再現性良好提供平坦性高的薄膜,可因應使用的塗佈方法調製清漆。 In the present invention, the varnish contains at least one kind of varnish having a viscosity of 10 to 200 mPa · s, especially 35 to 150 mPa · s at 25 ° C, and a boiling point of 50 to 300 ° C at normal pressure (atmospheric pressure). In particular, a high-viscosity organic solvent at 150 to 250 ° C makes it easy to adjust the viscosity of the varnish. As a result, it has good reproducibility and provides a film with high flatness. The varnish can be prepared according to the coating method used.

高黏度有機溶劑無特別限定,可舉例如環己醇、乙二醇、乙二醇二縮水甘油醚、1,3-辛二醇、二乙二醇、二丙二醇、三乙二醇、三丙二醇、1,3-丁二醇、2,3-丁二醇、1,4-丁二醇、丙二醇、己二醇等。此等溶劑可單獨使用1種或混合2種以上使用。 The high-viscosity organic solvent is not particularly limited, and examples thereof include cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octanediol, diethylene glycol, dipropylene glycol, triethylene glycol, and tripropylene glycol. , 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexanediol, and the like. These solvents can be used singly or in combination of two or more.

高黏度有機溶劑相對於本發明之清漆所使用之溶劑全體的添加比例,較佳為固體不析出的範圍內,在固體不析出的範圍內,添加比例較佳為5~80質量%。 The addition ratio of the high-viscosity organic solvent to the entire solvent used in the varnish of the present invention is preferably in a range where solids do not precipitate, and in a range where solids do not precipitate, the addition ratio is preferably 5 to 80% by mass.

此外,為了提高對基板之濕潤性、調整溶劑之表面張力、調整極性、調整沸點等之目的,相對於清漆所使用之溶劑全體,較佳為混合1~90質量%、更佳為混合1~50質量%之比例的其他的溶劑。 In addition, in order to improve the wettability of the substrate, adjust the surface tension of the solvent, adjust the polarity, and adjust the boiling point, etc., it is preferable to mix 1 to 90% by mass, and more preferably to mix 1 to the entire solvent used in the varnish. 50% by mass of other solvents.

這種溶劑,可舉例如乙二醇單丁基醚、二乙二醇二乙基醚、二乙二醇二甲基醚、丙二醇單甲基醚、二乙二醇單乙基醚乙酸酯、二乙二醇單丁基醚乙酸酯、二丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、二乙二醇單乙基醚、二丙酮醇、γ-丁內酯、乙基乳酸酯、n-己基乙酸酯、二乙二醇單甲基醚等,但不限於此等。此等溶劑可1種單獨使用或 混合2種以上使用。 Examples of such a solvent include ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl ether, and diethylene glycol monoethyl ether acetate. , Diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl Lactate, n-hexyl acetate, diethylene glycol monomethyl ether, and the like, but are not limited thereto. These solvents can be used alone or Use by mixing 2 or more types.

本發明之清漆之黏度係配合製作之薄膜的厚度等或固體成分濃度適宜設定者,但通常在25℃下為1~50mPa‧s。 The viscosity of the varnish of the present invention is suitable for the thickness of the film to be produced or the solid content concentration, but it is usually 1 to 50 mPa · s at 25 ° C.

又,本發明中之電荷輸送性清漆之固體成分濃度係考量清漆之黏度及表面張力等或製作之薄膜之厚度等而適宜設定者,但通常為0.1~10.0質量%左右,若考量提升清漆之塗佈性時,較佳為0.5~5.0質量%、更佳為1.0~3.0質量%。 The solid content concentration of the charge-transporting varnish in the present invention is appropriately set in consideration of the viscosity and surface tension of the varnish or the thickness of the film to be produced, but it is usually about 0.1 to 10.0% by mass. In the case of coatability, it is preferably 0.5 to 5.0% by mass, and more preferably 1.0 to 3.0% by mass.

[有機矽烷化合物] [Organic Silane Compound]

本發明之電荷輸送性清漆較佳為含有有機矽烷化合物。有機矽烷化合物例如有二烷氧基矽烷化合物、三烷氧基矽烷化合物或四烷氧基矽烷化合物。此等可1種單獨或2種以上組合使用。 The charge-transporting varnish of the present invention preferably contains an organic silane compound. The organic silane compound is, for example, a dialkoxysilane compound, a trialkoxysilane compound, or a tetraalkoxysilane compound. These can be used individually by 1 type or in combination of 2 or more types.

特別是有機矽烷化合物,較佳為含有由二烷氧基矽烷化合物及三烷氧基矽烷化合物選出之1種,更佳為含有三烷氧基矽烷化合物。 In particular, the organic silane compound preferably contains one selected from a dialkoxysilane compound and a trialkoxysilane compound, and more preferably contains a trialkoxysilane compound.

二烷氧基矽烷化合物、三烷氧基矽烷化合物及四烷氧基矽烷化合物,可舉例如以式(B1)~(B3)所表示者。 Examples of the dialkoxysilane compound, trialkoxysilane compound, and tetraalkoxysilane compound include formulas (B1) to (B3).

SiR’2(OR)2 (B1) SiR ' 2 (OR) 2 (B1)

SiR’(OR)3 (B2) SiR '(OR) 3 (B2)

Si(OR)4 (B3) Si (OR) 4 (B3)

式中,R各自獨立表示可經Z101取代之碳數1~20之烷基、可經Z101取代之碳數2~20之烯基、可經Z101取代之碳數2~20之炔基、可經Z102取代之碳數6~20之芳基或可經Z102取代之碳數2~20之雜芳基。R’各自獨立表示可經Z103取代之碳數1~20之烷基、可經Z103取代之碳數2~20之烯基、可經Z103取代之碳數2~20之炔基、可經Z104取代之碳數6~20之芳基或可經Z104取代之碳數2~20之雜芳基。 In the formula, R each independently represents an alkyl group may be substituted with Z 101 carbon atoms of 1 to 20, the sum may be substituted with Z 101 carbon atoms, alkenyl having 2 to 20, the sum may be substituted with Z 101 carbon atoms, alkynyl of 2 to 20 Group, an aryl group having 6 to 20 carbon atoms which may be substituted by Z 102 or a heteroaryl group having 2 to 20 carbon atoms which may be substituted by Z 102 . R 'each independently represent an alkyl group may be substituted with Z 1 of 103 to 20 carbon atoms, the substituents Z may be the 103 carbon atoms of the alkenyl group having 2 to 20, Z may be a substituted alkynyl group of 103 carbon atoms of 2 to 20, the heteroaryl may be 2 to 20 substituted aryl group of Z 104 carbon atoms, an aryl group of 6 to 20 may be substituted with Z 104 or the number of carbon atoms.

Z101表示鹵素原子、可經Z105取代之碳數6~20之芳基或可經Z105取代之碳數2~20之雜芳基。 Z 101 represents a halogen atom, an aryl group having 6 to 20 carbon atoms which may be substituted with Z 105 or a heteroaryl group having 2 to 20 carbon atoms which may be substituted with Z 105 .

Z102表示鹵素原子、可經Z105取代之碳數1~20之烷基、可經Z105取代之碳數2~20之烯基或可經Z105取代之碳數2~20之炔基。 Z 102 represents a halogen atom, an alkyl group may be substituted by Z 105 of 1 to 20 carbon atoms, the sum may be substituted with Z 105 carbon atoms of the alkenyl group having 2 to 20 or 105 may be substituted with Z alkynyl of 2 to 20 carbon atoms of the group .

Z103表示鹵素原子、可經Z105取代之碳數6~20之芳基、可經Z105取代之碳數2~20之雜芳基、環氧基環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基(-NHCONH2)、硫醇基、異氰酸酯基(-NCO)、胺基、-NHY101基或-NY102Y103基。 Z 103 represents a halogen atom, an aryl group having 6 to 20 carbon atoms which can be substituted by Z 105 , a heteroaryl group having 2 to 20 carbon atoms which can be substituted by Z 105 , epoxycyclohexyl, glycidyloxy, methyl Propylene fluorenyloxy, propylene fluorenyloxy, ureido (-NHCONH 2 ), thiol, isocyanate (-NCO), amine, -NHY 101 or -NY 102 Y 103 .

Z104表示鹵素原子、可經Z105取代之碳數1~20之烷基、可經Z105取代之碳數2~20之烯基、可經Z105取代之碳數2~20之炔基、環氧基環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基(-NHCONH2)、硫醇基、異氰酸酯基(-NCO)、胺基、-NHY101基或-NY102Y103基。 Z 104 represents a halogen atom, an alkyl group may be substituted with Z 105 of 1 to 20 carbon atoms, the substituents Z may be the 105 carbon atoms of the alkenyl group having 2 to 20, Z 105 may be substituted alkynyl of 2 to 20 carbon atoms of the group , Epoxycyclohexyl, glycidyloxy, methacryloxy, propyleneoxy, ureido (-NHCONH 2 ), thiol, isocyanate (-NCO), amine, -NHY 101 Base or -NY 102 Y 103 base.

Y101~Y103各自獨立表示可經Z105取代之碳數1~20之烷基、可經Z105取代之碳數2~20之烯基、可經Z105取代之碳數2~20之炔基、可經Z105取代之碳數6~20之芳基或可經Z105取代之碳數2~20之雜芳基。 Y 101 ~ Y 103 each independently represent an alkyl group may be substituted with Z 105 of 1 to 20 carbon atoms, the sum may be substituted with Z 105 carbon atoms of the alkenyl group having 2 to 20, carbon atoms can be substituted by Z 2 to 20 of the 105 alkynyl group, Z 105 may be a substituted aryl group of a carbon number of 6 to 20 aryl or heteroaryl group substituted by Z 105 of the 2 to 20 carbon atoms.

Z105表示鹵素原子、胺基、硝基、氰基或硫醇基。 Z 105 represents a halogen atom, an amine group, a nitro group, a cyano group, or a thiol group.

式(B1)~(B3)中之鹵素原子、碳數1~20之烷基、碳數2~20之烯基、碳數2~20之炔基及碳數6~20之芳基,例如有與上述相同者。 Halogen atoms in formulas (B1) to (B3), alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms, for example There are the same as above.

R較佳為可經Z101取代之碳數1~20之烷基、可經Z101取代之碳數2~20之烯基或可經Z102取代之碳數6~20之芳基,更佳為可經Z101取代之碳數1~6之烷基、可經Z101取代之碳數2~6之烯基或可經Z102取代之苯基,又更佳為可經Z101取代之碳數1~4之烷基或可經Z102取代之苯基,又更佳為可經Z101取代之甲基或乙基。 R is preferably an alkyl group may be substituted by the Z 101 of 1 to 20 carbon atoms, may be substituted with the group Z 101 carbon atoms, alkenyl of 2 to 20, or it may be substituted with Z 102 carbon atoms of the aryl group having 6 to 20, more Jia Z 101 is substituted it may be an alkyl group having 1 to 6 carbon atoms, the substituents may be the Z 101 carbon atoms of the alkenyl group having 2 to 6 or, more preferably and Z 101 may be substituted by a substituted phenyl group of Z 102 An alkyl group having 1 to 4 carbon atoms or a phenyl group which may be substituted with Z 102 , and more preferably a methyl group or ethyl group which may be substituted with Z 101 .

又,R’較佳為可經Z103取代之碳數1~20之烷基或可經Z104取代之碳數6~20之芳基,更佳為可經Z103取代之碳數1~10之烷基或可經Z104取代之碳數6~14之芳基,又更佳為可經Z103取代之碳數1~6之烷基或可經Z104取代之碳數6~10之芳基,又更佳為可經Z103取代之碳數1~4之烷基或可經Z104取代之苯基。 Further, R ′ is preferably an alkyl group having 1 to 20 carbon atoms that can be substituted by Z 103 or an aryl group having 6 to 20 carbon atoms that can be substituted by Z 104 , and more preferably 1 to 20 carbon atoms that can be substituted by Z 103 . An alkyl group of 10 or an aryl group having 6 to 14 carbon atoms that can be substituted by Z 104 , and an alkyl group of 1 to 6 carbon atoms that can be substituted by Z 103 or 6 to 10 carbon atoms that can be substituted by Z 104 The aryl group is more preferably an alkyl group having 1 to 4 carbon atoms which may be substituted by Z 103 or a phenyl group which may be substituted by Z 104 .

又,複數之R可全部相同或相異,複數之R’也可全部相同或相異。 Moreover, all of the plural R's may be the same or different, and all of the plural R's may be the same or different.

Z101較佳為鹵素原子或可經Z105取代之碳數6~20之芳基,更佳為氟原子或可經Z105取代之苯基,最 佳為不存在(即、非取代)。 Z 101 is preferably a halogen atom or an aryl group having 6 to 20 carbon atoms which can be substituted by Z 105 , more preferably a fluorine atom or a phenyl group which can be substituted by Z 105 , and most preferably is absent (ie, non-substituted).

又,Z102較佳為鹵素原子或可經Z105取代之碳數6~20之烷基,更佳為氟原子或可經Z105取代之碳數1~10之烷基,最佳為不存在(即、非取代)。 In addition, Z 102 is preferably a halogen atom or an alkyl group having 6 to 20 carbon atoms which may be substituted with Z 105 , more preferably a fluorine atom or an alkyl group having 1 to 10 carbon atoms which may be substituted with Z 105 , and most preferably not Exists (ie, non-substituted).

此外,Z103較佳為鹵素原子、可經Z105取代之苯基、可經Z105取代之呋喃基、環氧基環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基、硫醇基、異氰酸酯基、胺基、可經Z105取代之苯基胺基或可經Z104取代之二苯基胺基,更佳為鹵素原子,又更佳為氟原子或不存在(亦即,非取代)。 Further, Z 103 is preferably a halogen atom, a phenyl group may be substituted by Z of 105, 105 may be substituted with Z of furanyl, epoxy cyclohexyl group, glycidoxy group, Bing Xixi methyl group, an oxygen Bing Xixi Group, urea group, thiol group, isocyanate group, amine group, phenylamino group which can be substituted by Z 105 or diphenylamino group which can be substituted by Z 104 , more preferably a halogen atom, and more preferably a fluorine atom Or does not exist (ie, non-substituted).

又,Z104較佳為鹵素原子、可經Z105取代之碳數1~20之烷基、可經Z105取代之呋喃基、環氧基環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基、硫醇基、異氰酸酯基、胺基、可經Z105取代之苯基胺基或可經Z105取代之二苯基胺基,更佳為鹵素原子,又更佳為氟原子或不存在(亦即,非取代)。 And, Z 104 is preferably a halogen atom, an alkyl group may be substituted by Z 105 of 1 to 20 carbon atoms, the substituents Z may be the 105 furanyl, epoxy cyclohexyl group, glycidoxy group, methyl Bing Xixi group, Bing Xixi group, a ureido group, a thiol group, isocyanate group, amino group, Z may be a substituted phenyl group of 105 or 105 may be substituted with Z bis phenyl group, more preferably a halogen atom, Still more preferably, a fluorine atom is absent (ie, non-substituted).

此外,Z105較佳為鹵素原子,更佳為氟原子或不存在(即、非取代)。 Further, Z 105 is preferably a halogen atom, more preferably a fluorine atom or is absent (ie, non-substituted).

以下,列舉本發明可使用之有機矽烷化合物的具體例,但是不限於此等者。 Specific examples of the organosilane compound that can be used in the present invention are listed below, but are not limited thereto.

二烷氧基矽烷化合物的具體例,可舉例如二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲基乙基二甲氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、甲基丙基二甲氧基矽烷、甲基丙基二乙氧基矽烷、二異丙基二甲 氧基矽烷、苯基甲基二甲氧基矽烷、乙烯基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-(3,4-環氧基環己基)乙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-胺基丙基甲基二乙氧基矽烷、N-(2-胺基乙基)胺基丙基甲基二甲氧基矽烷、3,3,3-三氟丙基甲基二甲氧基矽烷等。 Specific examples of the dialkoxysilane compound include dimethyldimethoxysilane, dimethyldiethoxysilane, methylethyldimethoxysilane, diethyldimethoxysilane, Diethyldiethoxysilane, methylpropyldimethoxysilane, methylpropyldiethoxysilane, diisopropyldimethyl Oxysilane, phenylmethyldimethoxysilane, vinylmethyldimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyl Methyldiethoxysilane, 3- (3,4-epoxycyclohexyl) ethylmethyldimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3 -Methacryloxypropylmethyldiethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, N- (2-amine Ethyl) aminopropylmethyldimethoxysilane, 3,3,3-trifluoropropylmethyldimethoxysilane and the like.

三烷氧基矽烷化合物的具體例,可舉例如甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、戊基三甲氧基矽烷、戊基三乙氧基矽烷、庚基三甲氧基矽烷、庚基三乙氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、十二烷基三甲氧基矽烷、十二烷基三乙氧基矽烷、十六基三甲氧基矽烷、十六基三乙氧基矽烷、十八烷基三甲氧基矽烷、十八烷基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、三乙氧基(4-(三氟甲基)苯基)矽烷、十二烷基三乙氧基矽烷、3,3,3-三氟丙基三甲氧基矽烷、(三乙氧基矽烷基)環己烷、全氟 辛基乙基三乙氧基矽烷、三乙氧基氟矽烷、十三氟-1,1,2,2-四氫辛基三乙氧基矽烷、五氟苯基三甲氧基矽烷、五氟苯基三乙氧基矽烷、3-(七氟異丙氧基)丙基三乙氧基矽烷、十七氟-1,1,2,2-四氫癸基三乙氧基矽烷、三乙氧基-2-噻吩基矽烷、3-(三乙氧基矽烷基)呋喃等。 Specific examples of the trialkoxysilane compound include, for example, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, propyltrimethoxysilane, Propyltriethoxysilane, butyltrimethoxysilane, butyltriethoxysilane, pentyltrimethoxysilane, pentyltriethoxysilane, heptyltrimethoxysilane, heptyltriethoxy Silane, octyltrimethoxysilane, octyltriethoxysilane, dodecyltrimethoxysilane, dodecyltriethoxysilane, hexadecyltrimethoxysilane, hexadecyltriethyl Oxysilane, octadecyltrimethoxysilane, octadecyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxy Silane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltrisiloxane Ethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, (4- (trifluoromethyl) phenyl) silane, dodecyltriethoxysilane, 3,3,3-trifluoropropyltrimethoxysilane, (triethoxysilane) ring Hexane, perfluoro Octylethyltriethoxysilane, triethoxyfluorosilane, tridecyl-1,1,2,2-tetrahydrooctyltriethoxysilane, pentafluorophenyltrimethoxysilane, pentafluoro Phenyltriethoxysilane, 3- (heptafluoroisopropoxy) propyltriethoxysilane, heptafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane, triethyl Oxy-2-thienylsilane, 3- (triethoxysilyl) furan, and the like.

四烷氧基矽烷化合物的具體例,可舉例如四甲氧基矽烷、四乙氧基矽烷、四丙氧基矽烷等。 Specific examples of the tetraalkoxysilane compound include tetramethoxysilane, tetraethoxysilane, and tetrapropoxysilane.

此等之中,較佳為3,3,3-三氟丙基甲基二甲氧基矽烷、三乙氧基(4-(三氟甲基)苯基)矽烷、3,3,3-三氟丙基三甲氧基矽烷、全氟辛基乙基三乙氧基矽烷、五氟苯基三甲氧基矽烷、五氟苯基三乙氧基矽烷等。 Among these, 3,3,3-trifluoropropylmethyldimethoxysilane, triethoxy (4- (trifluoromethyl) phenyl) silane, and 3,3,3- Trifluoropropyltrimethoxysilane, perfluorooctylethyltriethoxysilane, pentafluorophenyltrimethoxysilane, pentafluorophenyltriethoxysilane, etc.

本發明之電荷輸送性清漆中之有機矽烷化合物的含量係相對於電荷輸送性物質及摻雜物的總質量,通常為0.1~50質量%左右,但若考量抑制所得到之薄膜之電荷輸送性之降低,且提高對在電洞輸送層或發光層等之陽極相反側,以接觸電洞注入層方式予以層合之層的電洞注入能時,較佳為0.5~40質量%左右、更佳為0.8~30質量%左右、又更佳為1~20質量%左右。 The content of the organosilane compound in the charge-transporting varnish of the present invention is generally about 0.1 to 50% by mass relative to the total mass of the charge-transporting substance and the dopant, but if consideration is given to suppressing the charge-transportability of the obtained film When it is lowered and the hole injection energy of the layer laminated on the opposite side of the anode such as the hole transport layer or the light emitting layer by contacting the hole injection layer is improved, it is preferably about 0.5 to 40% by mass. It is preferably about 0.8 to 30% by mass, and even more preferably about 1 to 20% by mass.

[四氰基苯醌二甲烷化合物] [Tetracyanobenzoquinone dimethane compound]

本發明之電荷輸送性清漆,較佳為含有式(6)表示之四氰基苯醌二甲烷(tetracyanoquinodimethane)化合物。藉由含有四氰基苯醌二甲烷化合物,將所得之薄膜作為有機EL元件之電洞注入層使用時,進一步提高其亮度 等之特性。又,將清漆進行低溫燒成時,也可再現性良好製造高平坦性及高電荷輸送性的薄膜。 The charge-transporting varnish of the present invention preferably contains a tetracyanoquinodimethane compound represented by formula (6). When the obtained thin film is used as a hole injection layer of an organic EL device by containing a tetracyanobenzoquinone dimethane compound, the brightness is further improved. And other characteristics. In addition, when the varnish is fired at a low temperature, a film having high flatness and high charge transportability can be produced with good reproducibility.

Figure TWI614249BD00008
Figure TWI614249BD00008

式中,R101~R104各自獨立表示氫原子或鹵素原子,但至少1個為鹵素原子。鹵素原子例如有與上述相同者,較佳為氟原子或氯原子,更佳為氟原子。又,R101~R104之至少2個為鹵素原子為佳,至少3個為鹵素原子更佳,全部為鹵素原子則最佳。 In the formula, R 101 to R 104 each independently represent a hydrogen atom or a halogen atom, but at least one of them is a halogen atom. The halogen atom is, for example, the same as described above, preferably a fluorine atom or a chlorine atom, and more preferably a fluorine atom. In addition, at least two of R 101 to R 104 are preferably halogen atoms, more preferably at least three are halogen atoms, and all of them are most preferably halogen atoms.

四氰基苯醌二甲烷化合物,具體而言,例如有四氟四氰基苯醌二甲烷(F4TCNQ)、四氯四氰基苯醌二甲烷、2-氟四氰基苯醌二甲烷、2-氯四氰基苯醌二甲烷、2,5-二氟四氰基苯醌二甲烷、2,5-二氯四氰基苯醌二甲烷等。四氰基苯醌二甲烷化合物,特佳為F4TCNQ。 Specific examples of the tetracyanobenzoquinone dimethane compound include tetrafluorotetracyanobenzoquinone dimethane (F4TCNQ), tetrachlorotetracyanobenzoquinone dimethane, 2-fluorotetracyanobenzoquinone dimethane, 2 -Chlorotetracyanobenzoquinone dimethane, 2,5-difluorotetracyanobenzoquinone dimethane, 2,5-dichlorotetracyanobenzoquinone dimethane, and the like. Tetracyanobenzoquinone dimethane compound, particularly preferred is F4TCNQ.

本發明之電荷輸送性清漆中之四氰基苯醌二甲烷化合物的含量係相對於噻吩衍生物,較佳為0.0001~1當量、更佳為0.001~0.5當量、又更佳為0.01~0.2當量。 The content of the tetracyanobenzoquinone dimethane compound in the charge-transporting varnish of the present invention is preferably 0.0001 to 1 equivalent, more preferably 0.001 to 0.5 equivalent, and still more preferably 0.01 to 0.2 equivalent with respect to the thiophene derivative. .

[其他的成分] [Other ingredients]

本發明之電荷輸送性清漆,除上述噻吩衍生物外,在不妨礙本發明之效果的範圍內,也可含有其他的電荷輸送性物質。又,本發明之電荷輸送性清漆可含有其他的物質,取代作為摻雜物之上述雜多酸。 The charge-transporting varnish of the present invention may contain other charge-transporting substances in addition to the above-mentioned thiophene derivative as long as the effect of the present invention is not impaired. The charge-transporting varnish of the present invention may contain other substances in place of the heteropoly acid as a dopant.

其他的電荷輸送性物質,列舉例如:日本特開第2002-151272號公報記載的寡苯胺衍生物、國際公開第2004/105446號記載的寡苯胺化合物、國際公開第2005/043962號記載的具有1,4-二噻哌喃環(1,4-dithiin ring)的化合物、國際公開第2008/032617號記載的寡苯胺化合物、國際公開第2008/032616號記載的寡苯胺化合物、國際公開第2013/042623號記載的芳基二胺化合物等。 Examples of other charge-transporting substances include the oligoaniline derivatives described in Japanese Patent Application Laid-Open No. 2002-151272, the oligoaniline compounds described in International Publication No. 2004/105446, and the oligoaniline compounds described in International Publication No. 2005/043962. A compound of 1,4-dithiin ring, an oligoaniline compound described in International Publication No. 2008/032617, an oligoaniline compound described in International Publication No. 2008/032616, and International Publication No. 2013 / An aryldiamine compound described in No. 042623.

特別是其他電荷輸送性物質,較佳為苯胺衍生物,考量對有機溶劑之溶解性時,該分子量較佳為4000以下,更佳為3000以下,又更佳為2000以下。 In particular, other charge-transporting substances are preferably aniline derivatives. When considering the solubility in organic solvents, the molecular weight is preferably 4,000 or less, more preferably 3,000 or less, and even more preferably 2,000 or less.

本發明中,適合作為其他電荷輸送性物質使用的苯胺衍生物,列舉例如式(7)表示者。 In the present invention, examples of the aniline derivative suitable for use as another charge transporting substance include those represented by formula (7).

Figure TWI614249BD00009
Figure TWI614249BD00009

B1表示單鍵、-NH-、-CH2-、-S-或-O-,較佳為單鍵或-NH-。 B 1 represents a single bond, -NH-, -CH 2- , -S-, or -O-, and is preferably a single bond or -NH-.

R201~R206各自獨立表示氫原子、鹵素原子、可經Z201所取代的碳數1~20之烷基、可經Z201所取代的碳數2~20之烯基、可經Z201所取代的碳數2~20之炔基、可經Z202所取代的碳數6~20之芳基、可經Z202所取代的碳數2~20之雜芳基、-OY201基、-SY202基、-NHY203、-NY204Y205基或-NHC(O)Y206基。Y201~Y206各自獨立表示 可經Z201所取代的碳數1~20之烷基、可經Z201所取代的碳數2~20之烯基、可經Z201所取代的碳數2~20之炔基、可經Z202所取代的碳數6~20之芳基或可經Z202所取代的碳數2~20之雜芳基。這種鹵素原子、烷基、烯基、烯基、芳基及雜芳基之具體例,可舉例與上述相同者。 R 201 ~ R 206 each independently represent a hydrogen atom, a halogen atom, an alkyl group may be substituted with Z 201 carbon atoms of 1 to 20, Z 201 may be substituted by an alkenyl group having a carbon number of 2 to 20, may be Z 201 substituted alkynyl group having a carbon number of 2 to 20, Z 202 may be substituted having 6 to 20 carbon atoms of the aryl group may be substituted with Z 202 2 to 20 carbon atoms of the hetero aryl group, -OY 201 group, -SY 202 group, -NHY 203 , -NY 204 Y 205 group, or -NHC (O) Y 206 group. Y 201 ~ Y 206 each independently represent an alkyl group may be substituted with Z 201 1 to 20 of carbon atoms, may be substituted with Z 201 carbon atoms of the alkenyl group having 2 to 20, Z 201 may be replaced by 2 carbon atoms ~ 20 alkynyl group, the heteroatoms may be the aryl group having 2 to 20 substituted by Z 202 carbon atoms, an aryl group of 6 to 20 or may be substituted with Z 202 carbon atoms. Specific examples of such a halogen atom, an alkyl group, an alkenyl group, an alkenyl group, an aryl group, and a heteroaryl group may be the same as those described above.

Z201表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z203所取代之碳數6~20之芳基或可經Z203所取代之碳數2~20之雜芳基。 Z 201 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, may be substituted with Z 203 carbon atoms of an aryl group of 6 to 20 or Z 203 may be the Heteroaryl groups having 2 to 20 carbon atoms.

Z202表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z203所取代之碳數1~20之烷基、可經Z203所取代之碳數2~20之烯基或Z203所取代之碳數2~20之炔基。 Z 202 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, an alkyl group may be substituted by the Z 203 carbon atoms of 1 to 20, Z 203 may be the Alkenyl having 2 to 20 carbon atoms substituted or alkynyl having 2 to 20 carbon atoms substituted by Z 203 .

Z203表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基或羧酸基。 Z 203 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, or a carboxylic acid group.

R201~R204較佳為氫原子、鹵素原子、可經Z201所取代之碳數1~20之烷基、可經Z202所取代之碳數6~20之芳基、可經Z201所取代之碳數1~20之烷氧基(即、Y201為可經Z201所取代之碳數1~20之烷基的-OY201基),更佳為氫原子、氟原子、可經Z201所取代之碳數1~10之烷基、可經Z202所取代之碳數6~14之芳基、可經Z201所取代之碳數1~10之烷氧基,又更佳為氫原子、氟原子、可經Z201所取代之碳數1~6之烷基、可經Z202所取代之6~10之芳基、可經Z201所取代之碳數1~6之烷氧基,又更佳為氫原子、氟原子、可經Z201所取代之碳數 1~6之烷基、可經Z201所取代之碳數1~6之烷氧基,最佳為氫原子。 R 201 to R 204 are preferably a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms that can be substituted by Z 201 , an aryl group having 6 to 20 carbon atoms that can be substituted by Z 202 , and Z 201 The substituted alkoxy group having 1 to 20 carbons (that is, Y 201 is a -OY 201 group having 1 to 20 alkyl groups which can be substituted by Z 201 ), more preferably a hydrogen atom, a fluorine atom, or Alkyl groups having 1 to 10 carbon atoms replaced by Z 201 , aryl groups having 6 to 14 carbon atoms that can be replaced by Z 202 , alkoxy groups 1 to 10 carbon atoms that can be replaced by Z 201 , and more It is preferably a hydrogen atom, a fluorine atom, an alkyl group having 1 to 6 carbon atoms that can be replaced by Z 201 , an aryl group having 6 to 10 carbon atoms that can be replaced by Z 202 , and 1 to 6 carbon atoms that can be replaced by Z 201 The alkoxy group is more preferably a hydrogen atom, a fluorine atom, an alkyl group having 1 to 6 carbon atoms which can be substituted by Z 201 , and an alkoxy group having 1 to 6 carbon atoms which can be substituted by Z 201 . Is a hydrogen atom.

此外,R205及R206較佳為氫原子、鹵素原子、各自之烷基為可經Z201所取代之碳數1~20之烷基的二烷基胺基(即、Y204及Y205為可經Z201所取代之碳數1~20之烷基的-NY204Y205基)、或各自之芳基為可經Z202所取代之碳數6~20之芳基的二芳基胺基(即、Y204及Y205為可經Z201所取代之碳數6~20之芳基的-NY204Y205基),更佳為氫原子、氟原子、各自之烷基為可經Z201所取代之碳數1~20之烷基的二烷基胺基、或各自之芳基為可經Z202所取代之碳數6~20之芳基的二芳基胺基,又更佳為氫原子、各自之芳基為可經Z202所取代之碳數6~20之芳基的二芳基胺基,又更佳為同時氫原子或各自之芳基為可經Z202所取代之碳數6~20之芳基的二芳基胺基。 In addition, R 205 and R 206 are preferably a hydrogen atom, a halogen atom, and each alkyl group is a dialkylamino group having 1 to 20 carbon atoms which may be substituted by Z 201 (ie, Y 204 and Y 205 (A group of -NY 204 Y 205 which is an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 201 ), or a diaryl group whose respective aryl group is an aryl group having 6 to 20 carbon atoms which may be substituted by Z 202 Amine group (i.e., Y 204 and Y 205 are -NY 204 Y 205 groups having 6 to 20 aryl groups which can be substituted by Z 201 ), more preferably a hydrogen atom, a fluorine atom, and their respective alkyl groups may be The dialkylamino group of the alkyl group having 1 to 20 carbon atoms substituted by Z 201 , or the respective aryl group is a diarylamino group of the aryl group having 6 to 20 carbon atoms that can be substituted by Z 202 , and More preferably, it is a hydrogen atom, and each aryl group is a diarylamino group having 6 to 20 carbon aryl groups which can be substituted by Z 202 , and more preferably, a simultaneous hydrogen atom or each aryl group is Z 202 Diarylamino group with 6 to 20 carbon atoms.

式(7)中,p及q各自獨立表示0以上之整數,且滿足2≦p+q≦20,較佳為2≦p+q≦8、更佳為2≦p+q≦6、又更佳為2≦p+q≦4。 In formula (7), p and q each independently represent an integer of 0 or more, and satisfy 2 ≦ p + q ≦ 20, preferably 2 ≦ p + q ≦ 8, more preferably 2 ≦ p + q ≦ 6, and More preferably, it is 2 ≦ p + q ≦ 4.

特別是R201~R206及Y201~Y206中,Z201較佳為可經Z202取代之碳數6~20之芳基,更佳為可經Z202取代之苯基,最佳為不存在(即、非取代)。 In particular R 201 ~ R 206 and Y 201 ~ Y 206 In, Z 201 is a substituted preferably Z 202 may be the carbon atoms of the aryl group having 6 to 20, more preferably the substituted phenyl group may be Z 202, most preferably Does not exist (ie, non-substituted).

又,Z202較佳為可經Z201取代之碳數1~20之烷基,更佳為可經Z201取代之碳數1~10之烷基,又更佳為可經Z201取代之碳數1~8之烷基,又更佳為可經Z201取代之碳數1~6之烷基,最佳為不存在(即、非取代)。 And, Z is preferably 202 may be substituted by an alkyl group having a carbon number of 1 to 201 Z of 20, more preferably a carbon number of Z may be substituted alkyl group having 1 to 201 of the 10, and more preferably 201 Z may be substituted by the The alkyl group having 1 to 8 carbons, and more preferably the alkyl group having 1 to 6 carbons which can be substituted by Z 201 , is most preferably absent (ie, non-substituted).

Z203較佳為鹵素原子、更佳為氟、最佳為不存在(即、非取代)。 Z 203 is preferably a halogen atom, more preferably fluorine, and most preferably non-existent (ie, non-substituted).

以下,本發明中,列舉適合作為其他之電荷輸送性物質之苯胺衍生物的具體例,但是不限於此等。 Hereinafter, in the present invention, specific examples of aniline derivatives suitable as other charge-transporting substances are listed, but the invention is not limited thereto.

Figure TWI614249BD00010
Figure TWI614249BD00010

另外,成為摻雜物之其他的物質,可舉出如苯磺酸、對甲苯磺酸(tosic acid)、p-苯乙烯磺酸、2-萘磺酸、4-羥基苯磺酸、5-磺基水楊酸(Sulfosalicylic Acid)、p-十二基苯磺酸、二己基苯磺酸、2,5-二己基苯磺酸、二丁基萘磺酸、6,7-二丁基-2-萘磺酸、十二基萘磺酸、3-十二基-2-萘磺酸、己基萘磺酸、4-己基-1-萘磺酸、辛基萘磺酸、2-辛基-1-萘磺酸、己基萘磺酸、7-己基-1-萘磺酸、6-己基-2-萘磺酸、二壬基萘磺酸、2,7-二壬基-4-萘磺酸、二壬基萘二磺酸、2,7-二壬基-4,5-萘二磺酸、國際公開第2005/000832號中記載之1,4-苯并二噁烷二磺酸化合物、國際公開第2006/025342號中記載之芳基磺酸化合物、國際公開第2009/096352號中記載之芳基磺酸化合物、聚苯乙烯磺酸等之芳基碸化合物;10-樟腦磺酸等 之非芳基碸化合物;7,7,8,8-四氰基醌二甲烷(TCNQ)、2,3-二氯-5,6-二氰基-1,4-苯醌(DDQ)等之有機氧化劑。 In addition, other substances that become a dopant include benzenesulfonic acid, tosic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5- Sulfosalicylic Acid, p-dodecylbenzenesulfonic acid, dihexylbenzenesulfonic acid, 2,5-dihexylbenzenesulfonic acid, dibutylnaphthalenesulfonic acid, 6,7-dibutyl- 2-naphthalenesulfonic acid, dodecylnaphthalenesulfonic acid, 3-dodecyl-2-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 4-hexyl-1-naphthalenesulfonic acid, octylnaphthalenesulfonic acid, 2-octyl 1-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 7-hexyl-1-naphthalenesulfonic acid, 6-hexyl-2-naphthalenesulfonic acid, dinonylnaphthalenesulfonic acid, 2,7-dinonyl-4-naphthalenesulfonic acid Sulfonic acid, dinonylnaphthalenedisulfonic acid, 2,7-dinonyl-4,5-naphthalenedisulfonic acid, 1,4-benzodioxane disulfonic acid described in International Publication No. 2005/000832 Compounds, arylsulfonic acid compounds described in International Publication No. 2006/025342, arylsulfonic acid compounds described in International Publication No. 2009/096352, arylfluorene compounds such as polystyrenesulfonic acid; 10-camphorsulfonic acid Acid Non-arylfluorene compounds; 7,7,8,8-tetracyanoquinone dimethane (TCNQ), 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ), etc. Of organic oxidants.

此等中,成為摻雜劑之其他的物質,較佳為芳基磺酸化合物,考量對有機溶劑之溶解性時,其分子量較佳為3000以下,更佳為2000以下,又更佳為1000以下。 Among these, other substances that become dopants are preferably arylsulfonic acid compounds. When considering the solubility in organic solvents, the molecular weight is preferably 3,000 or less, more preferably 2,000 or less, and even more preferably 1,000. the following.

本發明中,適合作為摻雜劑的芳基磺酸化合物,列舉例如式(8)或(9)表示者。 In the present invention, examples of the arylsulfonic acid compound suitable as a dopant include those represented by formula (8) or (9).

Figure TWI614249BD00011
Figure TWI614249BD00011

式(8)中,A1表示-O-或-S-,較佳為-O-。A2表示萘環或蒽環,較佳為萘環。A3表示二~四價的全氟聯苯基,j表示A1與A3之鍵結數,並滿足2≦j≦4的整數,A3為二價的全氟聯苯基,較佳為全氟聯苯基-4,4-二基,且j為2較佳。m表示鍵結於A2的磺酸基數,並為滿足1≦m≦4之整數,但較佳為2。 In formula (8), A 1 represents -O- or -S-, preferably -O-. A 2 represents a naphthalene ring or an anthracene ring, and is preferably a naphthalene ring. A 3 represents a di- to tetravalent perfluorobiphenyl, j represents the number of bonds between A 1 and A 3 , and satisfies the integer of 2 ≦ j ≦ 4, and A 3 is a divalent perfluorobiphenyl, preferably Is perfluorobiphenyl-4,4-diyl, and j is preferably 2. m represents the number of sulfonic acid groups bonded to A 2 and is an integer satisfying 1 ≦ m ≦ 4, but is preferably 2.

式(9)中,A4~A8各自獨立表示氫原子、鹵素原子、氰基、碳數1~20之烷基、碳數1~20之鹵素化烷基或碳數2~20之鹵素化烯基,A4~A8中至少3個為鹵素原子。k表示鍵結於萘環的磺酸基數,並為滿足1≦k≦4之整數,但較佳為2~4,更佳為2。 In formula (9), A 4 to A 8 each independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms, or a halogen group having 2 to 20 carbon atoms. Alkenyl, at least three of A 4 to A 8 are halogen atoms. k represents the number of sulfonic acid groups bonded to the naphthalene ring, and is an integer satisfying 1 ≦ k ≦ 4, but is preferably 2 to 4, and more preferably 2.

碳數1~20之鹵素化烷基,可舉例如三氟甲基、2,2,2-三氟乙基、1,1,2,2,2-五氟乙基、3,3,3-三氟丙 基、2,2,3,3,3-五氟丙基、1,1,2,2,3,3,3-七氟丙基、4,4,4-三氟丁基、3,3,4,4,4-五氟丁基、2,2,3,3,4,4,4-七氟丁基、1,1,2,2,3,3,4,4,4-九氟丁基等。碳數2~20之鹵素化烯基,可舉例如全氟乙烯基、1-全氟丙烯基、全氟烯丙基、全氟丁烯基等。 Examples of the halogenated alkyl group having 1 to 20 carbon atoms include trifluoromethyl, 2,2,2-trifluoroethyl, 1,1,2,2,2-pentafluoroethyl, 3,3,3 -Trifluoroprop Base, 2,2,3,3,3-pentafluoropropyl, 1,1,2,2,3,3,3-heptafluoropropyl, 4,4,4-trifluorobutyl, 3,3 , 4,4,4-pentafluorobutyl, 2,2,3,3,4,4,4-heptafluorobutyl, 1,1,2,2,3,3,4,4,4-nine Fluorobutyl etc. Examples of the halogenated alkenyl group having 2 to 20 carbon atoms include perfluorovinyl group, 1-perfluoropropenyl group, perfluoroallyl group, and perfluorobutenyl group.

鹵素原子、碳數1~20之烷基之例,可舉例與上述為相同者,鹵素原子較佳為氟原子。 Examples of the halogen atom and the alkyl group having 1 to 20 carbon atoms are the same as those described above. The halogen atom is preferably a fluorine atom.

此等之中,A4~A8較佳為氫原子、鹵素原子、氰基、碳數1~10之烷基、碳數1~10之鹵素化烷基或碳數2~10之鹵素化烯基,且A4~A8中至少3個為氟原子,更佳為氫原子、氟原子、氰基、碳數1~5之烷基、碳數1~5之氟化烷基或碳數2~5之氟化烯基,且A4~A8中至少3個為氟原子,又更佳為氫原子、氟原子、氰基、碳數1~5之全氟烷基或碳數1~5之全氟烯基,且A4、A5及A8為氟原子。 Among these, A 4 to A 8 are preferably a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, or a halogenation group having 2 to 10 carbon atoms. Alkenyl, and at least 3 of A 4 to A 8 are fluorine atoms, more preferably hydrogen atom, fluorine atom, cyano group, alkyl group having 1 to 5 carbon atoms, fluorinated alkyl group having 1 to 5 carbon atoms or carbon Fluorinated alkenyl groups of 2 to 5, and at least 3 of A 4 to A 8 are fluorine atoms, and more preferably hydrogen atoms, fluorine atoms, cyano groups, perfluoroalkyl groups or carbon numbers of 1 to 5 Perfluoroalkenyl of 1 to 5, and A 4 , A 5 and A 8 are fluorine atoms.

又,全氟烷基係指烷基之全數氫原子經氟原子所取代之基,全氟烯基係指烯基之全數氫原子經氟原子所取代之基。 In addition, a perfluoroalkyl group means a group in which all hydrogen atoms of an alkyl group are replaced by fluorine atoms, and a perfluoroalkenyl group means a group in which all hydrogen atoms of an alkenyl group are replaced by fluorine atoms.

舉例適合作為本發明之摻雜物之芳基磺酸化合物的具體例,但並不限定於此等。 Specific examples of the arylsulfonic acid compound suitable as the dopant of the present invention are exemplified, but are not limited thereto.

Figure TWI614249BD00012
Figure TWI614249BD00012

[電荷輸送性材料] [Charge-transporting material]

本發明之電荷輸送性材料係含有由式(1)表示之噻吩衍生物所構成之電荷輸送性物質與摻雜物。這種電荷輸送性材料顯示對有機溶劑之良好的溶解性,如上述,藉由使該電荷輸送性材料溶解於有機溶劑,可容易製造電荷輸送性清漆。 The charge-transporting material of the present invention contains a charge-transporting substance and a dopant composed of a thiophene derivative represented by formula (1). Such a charge-transporting material exhibits good solubility in an organic solvent. As described above, by dissolving the charge-transporting material in an organic solvent, a charge-transporting varnish can be easily produced.

[電荷輸送性薄膜] [Charge Transporting Film]

將本發明之電荷輸送性清漆塗佈於基材上,經燒成可在基材上形成電荷輸送性薄膜。 The charge-transporting varnish of the present invention is coated on a substrate, and a charge-transporting film can be formed on the substrate by firing.

清漆之塗佈方法無特別限定,例如有浸漬法、旋轉塗佈法、轉印印刷法、輥塗法、刷毛塗佈、噴墨法、噴霧法等,配合塗佈方法調節清漆黏度及表面張力較佳。 The coating method of the varnish is not particularly limited. For example, there are a dipping method, a spin coating method, a transfer printing method, a roll coating method, a bristle coating method, an inkjet method, and a spray method. Better.

又,使用本發明之清漆時,燒成環境也無特別限定,不僅在大氣環境,即使在氮等之惰性氣體或真空 中,也可得到具有均勻的成膜面及高的電荷輸送性的薄膜。 In addition, when the varnish of the present invention is used, the firing environment is not particularly limited, not only in the atmospheric environment, but also in an inert gas such as nitrogen or a vacuum. In addition, a thin film having a uniform film-forming surface and high charge-transporting properties can also be obtained.

燒成溫度考量取得之薄膜的用途、賦予所得之薄膜之電荷輸送性的程度等,可適宜設定在100~260℃程度之範圍內者,但所得之薄膜作為有機EL元件之電洞注入層使用時,較佳為140~250℃程度,更佳為145~240℃程度。 The use of the obtained thin film in consideration of the firing temperature and the degree of charge transport properties imparted to the obtained thin film can be appropriately set within a range of about 100 to 260 ° C. However, the obtained thin film is used as a hole injection layer of an organic EL device. It is preferably about 140 to 250 ° C, and more preferably about 145 to 240 ° C.

本發明之清漆之特徵之一為可在未達200℃之低溫下燒成的特徵,即使這種燒成條件下所製作的薄膜也具有高平坦性及高電荷輸送性。 One of the characteristics of the varnish of the present invention is that it can be fired at a low temperature of less than 200 ° C. Even under such firing conditions, the film produced has high flatness and high charge transportability.

又,燒成時,為了展現更高的均勻成膜性或使在基材上進行反應之目的,可施予2階段以上的溫度變化。加熱使用例如加熱板或烤箱等適當的機器進行即可。 In addition, during firing, a temperature change of two or more stages may be applied for the purpose of exhibiting a higher uniform film-forming property or allowing a reaction to proceed on the substrate. Heating may be performed using a suitable device such as a hot plate or an oven.

電荷輸送性薄膜之膜厚並無特別限定,作為有機EL元件之電洞注入層使用時,較佳為5~200nm。使膜厚變化的方法,例如有使清漆中之固體成分濃度變化,或使塗佈時之基板上的溶液量變化等的方法。 The thickness of the charge-transporting thin film is not particularly limited. When used as a hole injection layer of an organic EL device, it is preferably 5 to 200 nm. The method of changing the film thickness includes, for example, a method of changing the solid content concentration in the varnish, or changing the amount of the solution on the substrate during coating.

[有機EL元件] [Organic EL element]

使用本發明之電荷輸送性清漆,製作OLED元件時之使用材料或製作方法,可舉出如下述者,但不限於此等。 Examples of the materials or manufacturing methods used in the production of OLED elements using the charge-transporting varnish of the present invention include the following, but are not limited thereto.

使用之電極基板,以預先藉由洗劑、醇、純水等之液體洗淨使其淨化為佳,例如陽極基板,在使用之前進行UV臭氧處理、氧-電漿處理等之表面處理為佳。 但陽極材料以有機物為主成分時,亦可不施行表面處理。 The electrode substrate used is preferably cleaned by washing with liquid such as lotion, alcohol, pure water in advance. For example, the anode substrate is preferably surface treated with UV ozone treatment, oxygen-plasma treatment, etc. before use. . However, when the anode material is mainly composed of organic matter, the surface treatment may not be performed.

具有由本發明之電荷輸送性清漆而得之薄膜所構成的電洞注入層之OLED元件之製作方法例,如以下所示。 An example of a method for manufacturing an OLED device having a hole injection layer composed of a thin film obtained from the charge-transporting varnish of the present invention is shown below.

藉由上述方法,於陽極基板上塗佈本發明之電荷輸送性清漆,經燒成,在電極上製作電洞注入層。將此導入於真空蒸鍍裝置內,依序蒸鍍電洞輸送層、發光層、電子輸送層、電子輸送層/電洞阻隔層、電子注入層、陰極金屬,作成OLED元件。此外,因應必要亦可在發光層與電洞輸送層之間設置電子阻隔層。 According to the method described above, the charge-transporting varnish of the present invention is coated on the anode substrate, and a hole injection layer is formed on the electrode after firing. This was introduced into a vacuum evaporation device, and a hole transporting layer, a light emitting layer, an electron transporting layer, an electron transporting layer / hole blocking layer, an electron injection layer, and a cathode metal were sequentially vapor-deposited to form an OLED element. In addition, if necessary, an electron blocking layer may be provided between the light emitting layer and the hole transporting layer.

陽極材料可列舉如由銦錫氧化物(ITO)、銦鋅氧化物(IZO)所代表之透明電極、由鋁所代表之金屬或此等之合金等所構成之金屬陽極,較佳為進行平坦化處理者。亦可使用具有高電荷輸送性之聚噻吩衍生物或聚苯胺衍生物。 Examples of the anode material include metal anodes such as transparent electrodes represented by indium tin oxide (ITO), indium zinc oxide (IZO), metals represented by aluminum, or alloys thereof, and the like is preferred.化 Processor. It is also possible to use a polythiophene derivative or a polyaniline derivative having a high charge-transporting property.

此外,構成金屬陽極之其他金屬,可列舉如鈧、鈦、釩、鉻、錳、鐵、鈷、鎳、銅、鋅、鎵、釔、鋯、鈮、鉬、釕、銠、鈀、鎘、銦、鈧、鑭、鈰、鐠、釹、鉅、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鉿、鉈、鎢、錸、鋨、銥、鉑、金、鈦、鉛、鉍或此等之合金等,但不限於此等。 In addition, other metals constituting the metal anode include rhenium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, cadmium, Indium, thallium, lanthanum, cerium, praseodymium, neodymium, giant, thorium, thorium, thorium, thorium, thorium, ', thorium, thorium, thorium, thorium, thorium, tungsten, thallium, thallium, thallium, iridium, platinum, gold, titanium, Lead, bismuth, or the like, but not limited thereto.

形成電洞輸送層的材料,可列舉例如(三苯基胺)二聚物衍生物、[(三苯基胺)二聚物]螺二聚物、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-聯苯胺(α- NPD)、N,N’-雙(萘-2-基)-N,N’-雙(苯基)-聯苯胺、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-聯苯胺、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-9,9-螺二茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-9,9-螺二茀、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-9,9-二甲基-茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-9,9-二甲基-茀、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-9,9-二苯基-茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-9,9-二苯基-茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-2,2’-二甲基聯苯胺、2,2’,7,7’-四(N,N-二苯基胺基)-9,9-螺二茀、9,9-雙[4-(N,N-雙-聯苯基-4-基-胺基)苯基]-9H-茀、9,9-雙[4-(N,N-雙-萘-2-基-胺基)苯基]-9H-茀、9,9-雙[4-(N-萘-1-基-N-苯基胺基)-苯基]-9H-茀、2,2’,7,7’-四[N-萘基(苯基)-胺基]-9,9-螺二茀、N,N’-雙(菲-9-基)-N,N’-雙(苯基)-聯苯胺、2,2’-雙[N,N-雙(聯苯基-4-基)胺基]-9,9-螺二茀、2,2’-雙(N,N-二苯基胺基)-9,9-螺二茀、二-[4-(N,N-二(p-甲苯基)胺基)-苯基]環己烷、2,2’,7,7’-四(N,N-二(p-甲苯基)胺基)-9,9-螺二茀、N,N,N’,N’-四-萘-2-基-聯苯胺、N,N,N’,N’-四-(3-甲基苯基)-3,3’-二甲基聯苯胺、N,N’-二(萘基)-N,N’-二(萘-2-基)-聯苯胺、N,N,N’,N’-四(萘基)-聯苯胺、N,N’-二(萘-2-基)-N,N’-二苯基聯苯胺-1,4-二胺、N1,N4-二苯基-N1,N4-二(m-甲苯基)苯-1,4-二胺、N2,N2,N6,N6-四苯基萘-2,6-二胺、三(4-(喹啉-8-基)苯基)胺、2,2’-雙(3-(N,N- 二(p-甲苯基)胺基)苯基)聯苯、4,4’,4”-三[3-甲基苯基(苯基)胺基]三苯基胺(m-MTDATA)、4,4’,4”-三[1-萘基(苯基)胺基]三苯基胺(1-TNATA)等之三芳基胺類、5,5”-雙-{4-[雙(4-甲基苯基)胺基]苯基}-2,2’:5’,2”-三聯噻吩(BMA-3T)等的寡噻吩類等。 Examples of the material forming the hole transport layer include (triphenylamine) dimer derivatives, [(triphenylamine) dimer] spiro dimers, and N, N'-bis (naphthalene-1- Group) -N, N'-bis (phenyl) -benzidine (α-NPD), N, N'-bis (naphthalene-2-yl) -N, N'-bis (phenyl) -benzidine, N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -benzidine, N, N'-bis (3-methylphenyl) -N, N'-bis (Phenyl) -9,9-spirobifluorene, N, N'-bis (naphthalene-1-yl) -N, N'-bis (phenyl) -9,9-spirobifluorene, N, N ' -Bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene, N, N'-bis (naphthalene-1-yl) -N, N ' -Bis (phenyl) -9,9-dimethyl-fluorene, N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl -Fluorene, N, N'-bis (naphthalene-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene, N, N'-bis (naphthalene-1-yl) ) -N, N'-bis (phenyl) -2,2'-dimethylbenzidine, 2,2 ', 7,7'-tetra (N, N-diphenylamino) -9,9 -Spirobifluorene, 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene, 9,9-bis [4- (N, N-bis-naphthalene-2-yl-amino) phenyl] -9H-fluorene, 9,9-bis [4- (N-naphthalene-1-yl-N-phenylamino) -phenyl]- 9H-fluorene, 2,2 ', 7,7'-tetrakis [N-naphthyl (phenyl) -amino] -9,9-spirobifluorene, N, N'-bis (phenanthrene-9-yl) -N, N'-double ( ) -Benzidine, 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] -9,9-spirobifluorene, 2,2'-bis (N, N- Diphenylamino) -9,9-spirobifluorene, di- [4- (N, N-bis (p-tolyl) amino) -phenyl] cyclohexane, 2,2 ', 7, 7'-tetrakis (N, N-bis (p-tolyl) amino) -9,9-spirobifluorene, N, N, N ', N'-tetra-naphthalen-2-yl-benzidine, N , N, N ', N'-tetra- (3-methylphenyl) -3,3'-dimethylbenzidine, N, N'-bis (naphthyl) -N, N'-bis (naphthalene -2-yl) -benzidine, N, N, N ', N'-tetrakis (naphthyl) -benzidine, N, N'-bis (naphthalene-2-yl) -N, N'-diphenyl Benzidine-1,4-diamine, N 1 , N 4 -diphenyl-N 1 , N 4 -bis (m-tolyl) benzene-1,4-diamine, N 2 , N 2 , N 6 , N 6 -tetraphenylnaphthalene-2,6-diamine, tris (4- (quinolin-8-yl) phenyl) amine, 2,2'-bis (3- (N, N-bis (p -Tolyl) amino) phenyl) biphenyl, 4,4 ', 4 "-tri [3-methylphenyl (phenyl) amino] triphenylamine (m-MTDATA), 4,4' Triarylamines such as 4,4 "-tri [1-naphthyl (phenyl) amino] triphenylamine (1-TNATA), 5,5" -bis- {4- [bis (4-methyl Phenyl) amino] phenyl} -2,2 ': 5', 2 "-triptythiophene (BMA-3T) and the like.

形成發光層之材料,可列舉如參(8-羥基喹啉)鋁(III)(Alq3)、雙(8-羥基喹啉)鋅(II)(Znq2)、雙(2-甲基-8-羥基喹啉)-4-(p-苯基苯酚)鋁(III)(BAlq)、4,4’-雙(2,2-二苯基乙烯基)聯苯、9,10-二(萘-2-基)蒽、2-t-丁基-9,10-二(萘-2-基)蒽、2,7-雙[9,9-二(4-甲基苯基)-茀-2-基]-9,9-二(4-甲基苯基)茀、2-甲基-9,10-雙(萘-2-基)蒽、2-(9,9-旋環雙茀-2-基)-9,9-旋環雙茀、2,7-雙(9,9-旋環雙茀-2-基)-9,9-旋環雙茀、2-[9,9-二(4-甲基苯基)-茀-2-基]-9,9-二(4-甲基苯基)茀、2,2’-二芘基-9,9-旋環雙茀、1,3,5-參(芘-1-基)苯、9,9-雙[4-(芘基)苯基]-9H-茀、2,2’-聯(9,10-二苯基蒽)、2,7-二芘基-9,9-旋環雙茀、1,4-二(芘-1-基)苯、1,3-二(芘-1-基)苯、6,13-二(聯苯-4-基)稠五苯、3,9-二(萘-2-基)苝、3,10-二(萘-2-基)苝、參[4-(芘基)-苯基]胺、10,10’-二(聯苯-4-基)-9,9’-雙蒽、N,N’-二(萘-1-基)-N,N’-二苯基-[1,1’:4’,1”:4”,1”’-四聯苯基]-4,4”’-二胺、4,4’-二[10-(萘-1-基)蒽-9-基]聯苯、二苯並{[f,f’]-4,4’,7,7’-四苯基}二茚基[1,2,3-cd:1’,2’,3’-lm]苝、1-(7-(9,9’-雙蒽-10-基)- 9,9-二甲基-9H-茀-2-基)芘、1-(7-(9,9’-雙蒽-10-基)-9,9-二己基-9H-茀-2-基)芘、1,3-雙(咔唑-9-基)苯、1,3,5-參(咔唑-9-基)苯、4,4’,4”-參(咔唑-9-基)三苯基胺、4,4’-雙(咔唑-9-基)聯苯(CBP)、4,4’-雙(咔唑-9-基)-2,2’-二甲基聯苯、2,7-雙(咔唑-9-基)-9,9-二甲基茀、2,2’,7,7’-肆(咔唑-9-基)-9,9-旋環雙茀、2,7-雙(咔唑-9-基)-9,9-二(p-甲苯基)茀、9,9-雙[4-(咔唑-9-基)-苯基]茀、2,7-雙(咔唑-9-基)-9,9-旋環雙茀、1,4-雙(三苯基矽烷基)苯、1,3-雙(三苯基矽烷基)苯、雙(4-N,N-二乙基胺基-2-甲基苯基)-4-甲基苯基甲烷、2,7-雙(咔唑-9-基)-9,9-二辛基茀、4,4”-二(三苯基矽烷基)-p-三聯苯、4,4’-二(三苯基矽烷基)聯苯、9-(4-t-丁基苯基)-3,6-雙(三苯基矽烷基)-9H-咔唑、9-(4-t-丁基苯基)-3,6-二(三苯甲基)-9H-咔唑、9-(4-t-丁基苯基)-3,6-雙(9-(4-甲氧基苯基)-9H-茀-9-基)-9H-咔唑、2,6-雙(3-(9H-咔唑-9-基)苯基)吡啶、三苯基(4-(9-苯基-9H-茀-9-基)苯基)矽烷、9,9-二甲基-N,N-二苯基-7-(4-(1-苯基-1H-苯並[d]咪唑-2-基)苯基)-9H-茀-2-胺、3,5-雙(3-(9H-咔唑-9-基)苯基)吡啶、9,9-旋環雙茀-2-基-二苯基-膦氧化物、9,9’-(5-(三苯基矽烷基)-1,3-伸苯基)雙(9H-咔唑)、3-(2,7-雙(二苯基磷醯基)-9-苯基-9H-茀-9-基)-9-苯基-9H-咔唑、4,4,8,8,12,12-六(p-甲苯基)-4H-8H-12H-12C-氮雜二苯並[cd,mn]芘、4,7-二(9H-咔唑-9-基)-1,10-啡啉、 2,2’-雙(4-(咔唑-9-基)苯基)聯苯、2,8-雙(二苯基磷醯基)二苯並[b,d]噻吩、雙(2-甲基苯基)二苯基矽烷、雙[3,5-二(9H-咔唑-9-基)苯基]二苯基矽烷、3,6-雙(咔唑-9-基)-9-(2-乙基-己基)-9H-咔唑、3-(二苯基磷醯基)-9-(4-(二苯基磷醯基)苯基)-9H-咔唑、3,6-雙[(3,5-二苯基)苯基]-9-苯基咔唑等,且亦可藉由與發光性摻雜物共蒸鍍形成發光層。 Materials for forming the light-emitting layer include, for example, ginseng (8-hydroxyquinoline) aluminum (III) (Alq 3 ), bis (8-hydroxyquinoline) zinc (II) (Znq 2 ), and bis (2-methyl- 8-hydroxyquinoline) -4- (p-phenylphenol) aluminum (III) (BAlq), 4,4'-bis (2,2-diphenylvinyl) biphenyl, 9,10-bis ( Naphthalene-2-yl) anthracene, 2-t-butyl-9,10-bis (naphthalene-2-yl) anthracene, 2,7-bis [9,9-bis (4-methylphenyl) -fluorene -2-yl] -9,9-bis (4-methylphenyl) fluorene, 2-methyl-9,10-bis (naphthalene-2-yl) anthracene, 2- (9,9-cyclocyclobis (Fluoren-2-yl) -9,9-cyclocyclobifluorene, 2,7-bis (9,9-cyclocyclobifluoren-2-yl) -9,9-cyclocyclobifluorene, 2- [9, 9-bis (4-methylphenyl) -fluoren-2-yl] -9,9-bis (4-methylphenyl) fluorene, 2,2'-difluorenyl-9,9-cyclocyclobis Samarium, 1,3,5-ginsyl (fluoren-1-yl) benzene, 9,9-bis [4- (fluorenyl) phenyl] -9H-fluorene, 2,2'-bi (9,10-di Phenylanthracene), 2,7-difluorenyl-9,9-cyclocyclobifluorene, 1,4-bis (fluoren-1-yl) benzene, 1,3-bis (fluoren-1-yl) benzene, 6,13-bis (biphenyl-4-yl) fused pentabenzene, 3,9-bis (naphthalene-2-yl) fluorene, 3,10-bis (naphthalene-2-yl) fluorene, reference [4- ( Fluorenyl) -phenyl] amine, 10,10'-bis (biphenyl-4-yl) -9,9'-bisanthracene, N, N'-bis (naphthalene-1-yl) -N, N ' -Diphenyl- [1,1 ': 4', 1 ": 4", 1 "'-tetraphenyl] -4,4"'-diamine 4,4'-bis [10- (naphthalene-1-yl) anthracene-9-yl] biphenyl, dibenzo {[f, f ']-4,4', 7,7'-tetraphenyl} Diindenyl [1,2,3-cd: 1 ', 2', 3'-lm] fluorene, 1- (7- (9,9'-bisanthracene-10-yl)-9,9-dimethyl -9H-fluoren-2-yl) fluorene, 1- (7- (9,9'-bisanthracene-10-yl) -9,9-dihexyl-9H-fluoren-2-yl) fluorene, 1, 3-bis (carbazole-9-yl) benzene, 1,3,5-ginsyl (carbazole-9-yl) benzene, 4,4 ', 4 "-ginsyl (carbazole-9-yl) triphenyl Amine, 4,4'-bis (carbazole-9-yl) biphenyl (CBP), 4,4'-bis (carbazole-9-yl) -2,2'-dimethylbiphenyl, 2, 7-bis (carbazol-9-yl) -9,9-dimethylfluorene, 2,2 ', 7,7'-(carbazol-9-yl) -9,9-cyclobicyclofluorene, 2,7-bis (carbazole-9-yl) -9,9-bis (p-tolyl) fluorene, 9,9-bis [4- (carbazole-9-yl) -phenyl] fluorene, 2 , 7-bis (carbazol-9-yl) -9,9-cyclocyclobifluorene, 1,4-bis (triphenylsilyl) benzene, 1,3-bis (triphenylsilyl) benzene, Bis (4-N, N-diethylamino-2-methylphenyl) -4-methylphenylmethane, 2,7-bis (carbazole-9-yl) -9,9-dioctyl Hydrazone, 4,4 "-bis (triphenylsilyl) -p-terphenyl, 4,4'-bis (triphenylsilyl) biphenyl, 9- (4-t-butylphenyl) -3,6-bis (triphenylsilyl) -9H-carbazole, 9- (4-t-butylphenyl) -3,6-bis (trityl) -9H-carbazole 9- (4-t-butylphenyl) -3,6-bis (9- (4-methoxyphenyl) -9H-fluoren-9-yl) -9H-carbazole, 2,6- Bis (3- (9H-carbazol-9-yl) phenyl) pyridine, triphenyl (4- (9-phenyl-9H-fluoren-9-yl) phenyl) silane, 9,9-dimethyl -N, N-diphenyl-7- (4- (1-phenyl-1H-benzo [d] imidazol-2-yl) phenyl) -9H-fluoren-2-amine, 3,5- Bis (3- (9H-carbazole-9-yl) phenyl) pyridine, 9,9-cyclocyclobisfluoren-2-yl-diphenyl-phosphine oxide, 9,9 '-(5- (tri Phenylsilyl) -1,3-phenylene) bis (9H-carbazole), 3- (2,7-bis (diphenylphosphonium) -9-phenyl-9H-fluorene-9- ) -9-phenyl-9H-carbazole, 4,4,8,8,12,12-hexa (p-tolyl) -4H-8H-12H-12C-azadibenzo [cd, mn ] Fluorene, 4,7-bis (9H-carbazole-9-yl) -1,10-morpholine, 2,2'-bis (4- (carbazole-9-yl) phenyl) biphenyl, 2 , 8-bis (diphenylphosphonium) dibenzo [b, d] thiophene, bis (2-methylphenyl) diphenylsilane, bis [3,5-bis (9H-carbazole-9) -Yl) phenyl] diphenylsilane, 3,6-bis (carbazole-9-yl) -9- (2-ethyl-hexyl) -9H-carbazole, 3- (diphenylphosphonium) ) -9- (4- (diphenylphosphonium) phenyl) -9H-carbazole, 3,6-bis [(3,5-diphenyl) phenyl] -9-phenylcarbazole, etc. , And can also be co-evaporated with luminescent dopants A light emitting layer is formed by plating.

發光性摻雜物可列舉如3-(2-苯並噻唑基)-7-(二乙基胺基)香豆素、2,3,6,7-四氫-1,1,7,7-四甲基-1H,5H,11H-10-(2-苯並噻唑基)喹嗪并(quinolizino)[9,9a,1gh]香豆素、喹吖啶酮、N,N’-二甲基-喹吖啶酮、三(2-苯基吡啶)銥(III)(Ir(ppy)3)、雙(2-苯基吡啶)(乙醯丙酮)(Acetylacetonate)銥(III)(Ir(ppy)2(acac))、三[2-(p-甲苯基)吡啶]銥(III)(Ir(mppy)3)、9,10-雙[N,N-二(p-甲苯基)胺基]蒽、9,10-雙[苯基(m-甲苯基)胺基]蒽、雙[2-(2-羥基苯基)苯並噻唑(thiazolato)]鋅(II)、N10,N10,N10,N10-四(p-甲苯基)-9,9’-聯蒽(bianthracene)-10,10’-二胺、N10,N10,N10,N10-四苯基-9,9,-聯蒽-10,10’-二胺、N10,N10-二苯基-N10,N10-二萘基-9,9’-聯蒽-10,10’-二胺、4,4’-雙(9-乙基-3-咔唑伸乙烯基)-1,1’-聯苯、苝、2,5,8,11-四-t-丁基苝、1,4-雙[2-(3-N-乙基咔唑基)乙烯基]苯、4,4’-雙[4-(二-p-甲苯基胺基)苯乙烯基]聯苯、4-(二-p-甲苯基胺基)-4’-[(二-p-甲苯基胺基)苯乙烯基]茋、雙[3,5-二 氟-2-(2-吡啶基)苯基-(2-羧基吡啶基)]銥(III)、4,4’-雙[4-(二苯基胺基)苯乙烯基]聯苯、雙(2,4-二氟苯基吡啶)四(1-吡唑基)硼酸酯銥(III)、N,N’-雙(萘-2-基)-N,N’-雙(苯基)-三(9,9-二甲基伸茀基)、2,7-雙{2-[苯基(m-甲苯基)胺基]-9,9-二甲基-茀-7-基}-9,9-二甲基-茀、N-(4-((E)-2-(6((E)-4-(二苯基胺基)苯乙烯基)萘-2-基)乙烯基)苯基)-N-苯基苯胺、fac-銥(III)參(1-苯基-3-甲基苯並咪唑啉-2-亞基-C,C2)、mer-銥(III)參(1-苯基-3-甲基苯並咪唑啉-2-亞基-C,C2)、2,7-雙[4-(二苯基胺基)苯乙烯基]-9,9-旋環二茀、6-甲基-2-(4-(9-(4-(6-甲基苯並[d]噻唑-2-基)苯基)蒽-10-基)苯基)苯並[d]噻唑、1,4-二[4-(N,N-二苯基)胺基]苯乙烯基苯、1,4-雙(4-(9H-咔唑-9-基)苯乙烯基)苯、(E)-6-(4-(二苯基胺基)苯乙烯基)-N,N-二苯基萘-2-胺、雙(2,4-二氟苯基吡啶)(5-(吡啶-2-基)-1H-四唑)銥(III)、雙(3-三氟甲基-5-(2-吡啶基)吡唑)((2,4-二氟苄基)二苯基亞膦酸酯)銥(III)、雙(3-三氟甲基-5-(2-吡啶基)吡唑)(苄基二苯基亞膦酸酯)銥(III)、雙(1-(2,4-二氟苄基)-3-甲基苯並咪唑鎓)(3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑)銥(III)、雙(3-三氟甲基-5-(2-吡啶基)吡唑)(4’,6’-二氟苯基吡啶酯)銥(III)、雙(4’,6’-二氟苯基吡啶)(3,5-雙(三氟甲基)-2-(2’-吡啶基)吡咯)銥(III)、雙(4’,6’-二氟苯基吡啶)(3- (三氟甲基)-5-(2-吡啶基)-1,2,4-三唑)銥(III)、(Z)-6-三甲苯基-N-(6-三甲苯基(Mesityl)喹啉-2(1H)-亞基)喹啉-2-胺-BF2、(E)-2-(2-(4-(二甲基胺基)苯乙烯基)-6-甲基-4H-吡喃-4-亞基)丙二腈、4-(二氰基亞甲基)-2-甲基-6-久洛尼定基-9-烯基-4H-吡喃、4-(二氰基亞甲基)-2-甲基-6-(1,1,7,7-四甲基久洛尼定基-9-烯基)-4H-吡喃、4-(二氰基亞甲基)-2-t-丁基-6-(1,1,7,7-四甲基久洛尼定-4-基-乙烯基)-4H-吡喃、三(二苯甲醯基甲烷)菲繞啉銪(III)、5,6,11,12-四苯基並四苯、雙(2-苯並[b]噻吩-2-基-吡啶)(乙醯丙酮)銥(III)、三(1-苯基異喹啉)銥(III)、雙(1-苯基異喹啉)(乙醯丙酮)銥(III)、雙[1-(9,9-二甲基-9H-茀-2-基)-異喹啉](乙醯丙酮)銥(III)、雙[2-(9,9-二甲基-9H-茀-2-基)喹啉](乙醯丙酮)銥(III)、三[4,4’-二-t-丁基-(2,2’)-二吡啶]釕(III)‧雙(六氟磷酸酯)、三(2-苯基喹啉)銥(III)、雙(2-苯基喹啉)(乙醯丙酮)銥(III)、2,8-二-t-丁基-5,11-雙(4-t-丁基苯基)-6,12-二苯基並四苯(tetracene)、雙(2-苯基苯並噻唑)(乙醯丙酮)銥(III)、5,10,15,20-四苯基四苯並卟啉白金、鋨(II)雙(3-三氟甲基-5-(2-吡啶)-吡唑)二甲基苯基膦、鋨(II)雙(3-(三氟甲基)-5-(4-t-丁基吡啶基)-1,2,4-三唑)二苯基甲基膦、鋨(II)雙(3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑)二甲基苯基膦、鋨(II)雙(3-(三氟甲基)-5-(4-t-丁基吡啶基)-1,2,4- 三唑)二甲基苯基膦、雙[2-(4-n-己基苯基)喹啉](乙醯丙酮)銥(III)、三[2-(4-n-己基苯基)喹啉]銥(III)、三[2-苯基-4-甲基喹啉]銥(III)、雙(2-苯基喹啉)(2-(3-甲基苯基)吡啶酯)銥(III)、雙(2-(9,9-二乙基-茀-2-基)-1-苯基-1H-苯並[d]咪唑(imidazolato)(乙醯丙酮)銥(III)、雙(2-苯基吡啶)(3-(吡啶-2-基)-2H-色烯-2-歐尼(onate))銥(III)、雙(2-苯基喹啉)(2,2,6,6-四甲基庚烷-3,5-二歐尼)銥(III)、雙(苯基異喹啉)(2,2,6,6-四甲基庚烷-3,5-二歐尼)銥(III)、銥(III)雙(4-苯基噻吩並[3,2-c]吡啶-N,C2)乙醯丙酮、(E)-2-(2-t-丁基-6-(2-(2,6,6-三甲基-2,4,5,6-四氫-1H-吡咯并[3,2,1-ij]喹啉-8-基)乙烯基)-4H-吡喃-4-亞基)丙二腈、雙(3-三氟甲基-5-(1-異喹啉基)吡唑)(甲基二苯基膦)釕、雙[(4-n-己基苯基)異喹啉](乙醯丙酮)銥(III)、白金(II)八乙基卟吩、雙(2-甲基二苯並[f,h]喹喔啉)(乙醯丙酮)銥(III)、三[(4-n-己基苯基)羥基喹啉]銥(III)等。 Examples of the light-emitting dopant include 3- (2-benzothiazolyl) -7- (diethylamino) coumarin, 2,3,6,7-tetrahydro-1,1,7,7 -Tetramethyl-1H, 5H, 11H-10- (2-benzothiazolyl) quinazino (9,9a, 1gh) coumarin, quinacridone, N, N'-dimethyl -Quinacridone, tris (2-phenylpyridine) iridium (III) (Ir (ppy) 3 ), bis (2-phenylpyridine) (acetylacetonate) iridium (III) (Ir ( ppy) 2 (acac)), tris [2- (p-tolyl) pyridine] iridium (III) (Ir (mppy) 3 ), 9,10-bis [N, N-bis (p-tolyl) amine Yl] anthracene, 9,10-bis [phenyl (m-tolyl) amino] anthracene, bis [2- (2-hydroxyphenyl) thiazolato] zinc (II), N 10 , N 10 , N 10 , N 10 -tetra (p-tolyl) -9,9'-bianthracene-10,10'-diamine, N 10 , N 10 , N 10 , N 10 -tetraphenyl -9,9, -Bienthracene-10,10'-diamine, N 10 , N 10 -Diphenyl-N 10 , N 10 -Dinaphthyl-9,9'-Bianthran-10,10'- Diamine, 4,4'-bis (9-ethyl-3-carbazole vinylidene) -1,1'-biphenyl, fluorene, 2,5,8,11-tetra-t-butylfluorene, 1,4-bis [2- (3-N-ethylcarbazolyl) vinyl] benzene, 4,4'-bis [4- (di-p-tolylamino) styryl] biphenyl, 4- (di-p-tolylamino) -4 '-[(di-p-toluene Aminoamino) styryl] fluorene, bis [3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl)] iridium (III), 4,4'-bis [ 4- (diphenylamino) styryl] biphenyl, bis (2,4-difluorophenylpyridine) tetra (1-pyrazolyl) borate iridium (III), N, N'-bis (Naphthalene-2-yl) -N, N'-bis (phenyl) -tris (9,9-dimethylarylene), 2,7-bis {2- [phenyl (m-tolyl) Amine] -9,9-dimethyl-fluoren-7-yl} -9,9-dimethyl-fluorene, N- (4-((E) -2- (6 ((E) -4- (Diphenylamino) styryl) naphthalene-2-yl) vinyl) phenyl) -N-phenylaniline, fac-iridium (III), (1-phenyl-3-methylbenzimidazole) Chloro-2-ylidene-C, C 2 ), mer-iridium (III) ginseng (1-phenyl-3-methylbenzimidazoline-2-ylidene-C, C 2 ), 2,7- Bis [4- (diphenylamino) styryl] -9,9-cyclocyclodifluorene, 6-methyl-2- (4- (9- (4- (6-methylbenzo [d ] Thiazol-2-yl) phenyl) anthracene-10-yl) phenyl) benzo [d] thiazole, 1,4-bis [4- (N, N-diphenyl) amino] styrylbenzene , 1,4-bis (4- (9H-carbazole-9-yl) styryl) benzene, (E) -6- (4- (diphenylamino) styryl) -N, N- Diphenylnaphthalene-2-amine, bis (2,4-difluorophenylpyridine) (5- (pyridin-2-yl) -1H-tetrazole) iridium (III), bis (3-trifluoromethyl -5- (2-pyridine (Pyridyl) pyrazole) ((2,4-difluorobenzyl) diphenylphosphinate) iridium (III), bis (3-trifluoromethyl-5- (2-pyridyl) pyrazole) (Benzyl diphenyl phosphinate) iridium (III), bis (1- (2,4-difluorobenzyl) -3-methylbenzimidazolium) (3- (trifluoromethyl)- 5- (2-pyridyl) -1,2,4-triazole) iridium (III), bis (3-trifluoromethyl-5- (2-pyridyl) pyrazole) (4 ', 6'- Difluorophenylpyridine ester) iridium (III), bis (4 ', 6'-difluorophenylpyridine) (3,5-bis (trifluoromethyl) -2- (2'-pyridyl) pyrrole) Iridium (III), bis (4 ', 6'-difluorophenylpyridine) (3- (trifluoromethyl) -5- (2-pyridyl) -1,2,4-triazole) iridium (III ), (Z) -6-Trisyl-N- (6-trisyl (Mesityl) quinoline-2 (1H) -subunit) quinoline-2-amine-BF 2 , (E) -2- (2- (4- (dimethylamino) styryl) -6-methyl-4H-pyran-4-ylidene) malononitrile, 4- (dicyanomethylene) -2- Methyl-6-julonidyl-9-alkenyl-4H-pyran, 4- (dicyanomethylene) -2-methyl-6- (1,1,7,7-tetramethyl Julonidyl-9-alkenyl) -4H-pyran, 4- (dicyanomethylene) -2-t-butyl-6- (1,1,7,7-tetramethyljulo Niddin-4-yl-vinyl) -4H-pyran, tris (dibenzylidenemethane) phenanthroline hydrazone (III), 5,6,11,12-tetraphenyl Tetrabenzo, bis (2-benzo [b] thiophen-2-yl-pyridine) (acetamidineacetone) iridium (III), tris (1-phenylisoquinoline) iridium (III), bis (1- Phenylisoquinoline) (Ethylacetone) iridium (III), bis [1- (9,9-dimethyl-9H-fluoren-2-yl) -isoquinoline] (Ethylacetone) iridium (III ), Bis [2- (9,9-dimethyl-9H-fluoren-2-yl) quinoline] (acetamidineacetone) iridium (III), tris [4,4'-di-t-butyl- (2,2 ')-dipyridine] ruthenium (III) ‧bis (hexafluorophosphate), tris (2-phenylquinoline) iridium (III), bis (2-phenylquinoline) (acetamidineacetone) ) Iridium (III), 2,8-di-t-butyl-5,11-bis (4-t-butylphenyl) -6,12-diphenyltetrane, bis (2 -Phenylbenzothiazole) (acetamidineacetone) iridium (III), 5,10,15,20-tetraphenyltetrabenzoporphyrin platinum, fluorene (II) bis (3-trifluoromethyl-5- (2-pyridine) -pyrazole) dimethylphenylphosphine, fluorene (II) bis (3- (trifluoromethyl) -5- (4-t-butylpyridyl) -1,2,4- Triazole) diphenylmethylphosphine, fluorene (II) bis (3- (trifluoromethyl) -5- (2-pyridyl) -1,2,4-triazole) dimethylphenylphosphine,锇 (II) bis (3- (trifluoromethyl) -5- (4-t-butylpyridyl) -1,2,4-triazole) dimethylphenylphosphine, bis [2- (4 -n-hexylphenyl) quinoline] (acetamidineacetone) iridium (III), tris [2- (4-n-hexane Phenyl) quinoline] iridium (III), tris [2-phenyl-4-methylquinoline] iridium (III), bis (2-phenylquinoline) (2- (3-methylphenyl) Pyridyl ester) iridium (III), bis (2- (9,9-diethyl-fluoren-2-yl) -1-phenyl-1H-benzo [d] imidazolato (acetamidineacetone) iridium (III), bis (2-phenylpyridine) (3- (pyridin-2-yl) -2H-chromene-2-onate) iridium (III), bis (2-phenylquinoline) (2,2,6,6-tetramethylheptane-3,5-dione) iridium (III), bis (phenylisoquinoline) (2,2,6,6-tetramethylheptane -3,5-dionic acid) iridium (III), iridium (III) bis (4-phenylthieno [3,2-c] pyridine-N, C 2 ) acetamidine, (E) -2- (2-t-butyl-6- (2- (2,6,6-trimethyl-2,4,5,6-tetrahydro-1H-pyrrolo [3,2,1-ij] quinoline -8-yl) vinyl) -4H-pyran-4-ylidene) malononitrile, bis (3-trifluoromethyl-5- (1-isoquinolinyl) pyrazole) (methyldiphenyl Phosphine) ruthenium, bis [(4-n-hexylphenyl) isoquinoline] (acetamidineacetone) iridium (III), platinum (II) octaethylporphine, bis (2-methyldibenzo [ f, h] quinoxaline) (acetamidineacetone) iridium (III), tris [(4-n-hexylphenyl) hydroxyquinoline] iridium (III), and the like.

形成電子輸送層/電洞阻隔層的材料,可列舉例如8-羥基喹啉-鋰、2,2’,2”-(1,3,5-苄基甲苯基)-三(1-苯基-1-H-苯並咪唑)、2-(4-聯苯基)5-(4-t-丁基苯基)-1,3,4-噁二唑、2,9-二甲基-4,7-二苯基-1,10-菲繞啉、4,7-二苯基-1,10-菲繞啉、雙(2-甲基-8-喹啉)-4-(苯基苯酚(phenolato))鋁、1,3-雙[2-(2,2’-二吡啶- 6-基)-1,3,4-噁二唑-5-基]苯、6,6’-雙[5-(聯苯-4-基)-1,3,4-噁二唑-2-基]-2,2’-二吡啶、3-(4-聯苯基)-4-苯基-5-t-丁基苯基-1,2,4-三唑、4-(萘-1-基)-3,5-二苯基-4H-1,2,4-三唑、2,9-雙(萘-2-基)-4,7-二苯基-1,10-菲繞啉、2,7-雙[2-(2,2’-二吡啶-6-基)-1,3,4-噁二唑-5-基]-9,9-二甲基茀、1,3-雙[2-(4-t-丁基苯基)-1,3,4-噁二唑-5-基]苯、三(2,4,6-三甲基-3-(吡啶-3-基)苯基)硼烷、1-甲基-2-(4-(萘-2-基)苯基)-1H-咪唑[4,5f][1,10]菲繞啉、2-(萘-2-基)-4,7-二苯基-1,10-菲繞啉、苯基-二芘基膦氧化物、3,3’,5,5’-四[(m-吡啶基)-苯-3-基]聯苯、1,3,5-三[(3-吡啶基)-苯-3-基]苯、4,4’-雙(4,6-二苯基-1,3,5-三嗪-2-基)聯苯、1,3-雙[3,5-二(吡啶-3-基)苯基]苯、雙(10-羥基苯並[h]喹啉)鈹、二苯基雙(4-(吡啶-3-基)苯基)矽烷、3,5-二(芘-1-基)吡啶等。 Examples of the material forming the electron transporting layer / hole blocking layer include 8-hydroxyquinoline-lithium, 2,2 ', 2 "-(1,3,5-benzyltolyl) -tris (1-phenyl) -1-H-benzimidazole), 2- (4-biphenyl) 5- (4-t-butylphenyl) -1,3,4-oxadiazole, 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, bis (2-methyl-8-quinoline) -4- (phenyl Phenolato) aluminum, 1,3-bis [2- (2,2'-dipyridine- 6-yl) -1,3,4-oxadiazol-5-yl] benzene, 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazole-2 -Yl] -2,2'-dipyridine, 3- (4-biphenyl) -4-phenyl-5-t-butylphenyl-1,2,4-triazole, 4- (naphthalene- 1-yl) -3,5-diphenyl-4H-1,2,4-triazole, 2,9-bis (naphthalene-2-yl) -4,7-diphenyl-1,10-phenanthrene Ringoline, 2,7-bis [2- (2,2'-dipyridin-6-yl) -1,3,4-oxadiazol-5-yl] -9,9-dimethylfluorene, 1 , 3-bis [2- (4-t-butylphenyl) -1,3,4-oxadiazol-5-yl] benzene, tris (2,4,6-trimethyl-3- (pyridine -3-yl) phenyl) borane, 1-methyl-2- (4- (naphthalene-2-yl) phenyl) -1H-imidazole [4,5f] [1,10] phenanthroline, 2 -(Naphthalene-2-yl) -4,7-diphenyl-1,10-phenanthroline, phenyl-diamidinophosphine oxide, 3,3 ', 5,5'-tetra [(m- Pyridyl) -phenyl-3-yl] biphenyl, 1,3,5-tri [(3-pyridyl) -phenyl-3-yl] benzene, 4,4'-bis (4,6-diphenyl -1,3,5-triazin-2-yl) biphenyl, 1,3-bis [3,5-bis (pyridin-3-yl) phenyl] benzene, bis (10-hydroxybenzo [h] Quinoline) beryllium, diphenylbis (4- (pyridin-3-yl) phenyl) silane, 3,5-bis (fluoren-1-yl) pyridine, and the like.

形成電子注入層的材料,可列舉出如氧化鋰(Li2O)、氧化鎂(MgO)、氧化鋁(Al2O3)、氟化鋰(LiF)、氟化鈉(NaF)、氟化鎂(MgF2)、氟化銫(CsF)、氟化鍶(SrF2)、三氧化鉬(MoO3)、鋁、Li(acac)、乙酸鋰、苯甲酸鋰等。 Examples of the material for forming the electron injection layer include lithium oxide (Li 2 O), magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), lithium fluoride (LiF), sodium fluoride (NaF), and fluoride Magnesium (MgF 2 ), cesium fluoride (CsF), strontium fluoride (SrF 2 ), molybdenum trioxide (MoO 3 ), aluminum, Li (acac), lithium acetate, lithium benzoate, and the like.

陰極材料,可列舉出如鋁、鎂-銀合金、鋁-鋰合金、鋰、鈉、鉀、銫等。 Examples of the cathode material include aluminum, magnesium-silver alloy, aluminum-lithium alloy, lithium, sodium, potassium, and cesium.

形成電子阻隔層的材料,可列舉出如三(苯基吡唑)銥等。 Examples of the material forming the electron blocking layer include tris (phenylpyrazole) iridium.

使用本發明之電荷輸送性清漆之PLED元件 的製作方法,無特別限定,可舉出如以下的方法。 PLED element using the charge-transporting varnish of the present invention The production method is not particularly limited, and examples thereof include the following methods.

在上述OLED元件製作中,取代進行電洞輸送層、發光層、電子輸送層、電子注入層之真空蒸鍍操作,而藉由依序形成電洞輸送性高分子層、發光性高分子層,可製作具有以本發明之電荷輸送性清漆形成之電荷輸送性薄膜的PLED元件。 In the above-mentioned OLED device manufacturing, instead of performing a vacuum evaporation operation of a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injection layer, by sequentially forming a hole transporting polymer layer and a light emitting polymer layer, A PLED element having a charge-transporting film formed of the charge-transporting varnish of the present invention is produced.

具體而言,於陽極基板上塗佈本發明之電荷輸送性清漆,藉由上述方法製作電洞注入層,於其上依序形成電洞輸送性高分子層、發光性高分子層,並再蒸鍍陰極電極而作成PLED元件。 Specifically, an anode substrate is coated with the charge-transporting varnish of the present invention, a hole injection layer is prepared by the above method, and a hole-transporting polymer layer and a light-emitting polymer layer are sequentially formed thereon, and then A cathode electrode was evaporated to form a PLED element.

使用之陰極及陽極材料,可使用與上述OLED元件製作時相同者,並能進行相同的洗淨處理、表面處理。 The cathode and anode materials used can be the same as those used in the production of the above OLED elements, and can perform the same cleaning treatment and surface treatment.

電洞輸送性高分子層及發光性高分子層之形成法,可列舉例如對電洞輸送性高分子材料或發光性高分子材料、或對此等添加摻雜物之材料加入溶劑使其溶解,或均勻分散,而塗佈於電洞注入層或電洞輸送性高分子層上後,分別進行燒成而成膜的方法。 Methods for forming the hole-transporting polymer layer and the light-emitting polymer layer include, for example, adding a solvent to the hole-transporting polymer material or the light-emitting polymer material, or adding a dopant to the solvent to dissolve the material. Or a method of uniformly dispersing and coating on a hole injection layer or a hole-transporting polymer layer, and then firing to form a film.

電洞輸送性高分子材料,可舉出如聚[(9,9-二己基茀-2,7-二基)-co-(N,N’-雙{p-丁基苯基}-1,4-二胺基亞苯)]、聚[(9,9-二辛基茀-2,7-二基)-co-(N,N’-雙{p-丁基苯基}-1,1’-亞聯苯-4,4-二胺)]、聚[(9,9-雙{1’-戊烯-5’-基}茀-2,7-二基)-co-(N,N’-雙{p-丁基苯基}-1,4-二胺基亞苯)]、以聚倍半矽氧烷封端之聚[N,N’-雙(4-丁 基苯基)-N,N’-雙(苯基)-聯苯胺]、聚[(9,9-二(二辛基)茀-2,7-二基)-co-(4,4’-(N-(p-丁基苯基))二苯基胺)]等。 Examples of hole-transporting polymer materials include poly [(9,9-dihexylfluorene-2,7-diyl) -co- (N, N'-bis {p-butylphenyl} -1 , 4-diaminophenylene)], poly [(9,9-dioctylfluorene-2,7-diyl) -co- (N, N'-bis {p-butylphenyl} -1 , 1'-biphenylene-4,4-diamine)], poly [(9,9-bis {1'-pentene-5'-yl} fluorene-2,7-diyl) -co- ( N, N'-bis {p-butylphenyl} -1,4-diaminophenylene)], poly [N, N'-bis (4-but Phenyl) -N, N'-bis (phenyl) -benzidine], poly [(9,9-bis (dioctyl) fluorene-2,7-diyl) -co- (4,4 ' -(N- (p-butylphenyl)) diphenylamine)] and the like.

發光性高分子材料,例如有聚(9,9-二烷基茀)(PDAF)等之聚茀衍生物、聚(2-甲氧基-5-(2’-乙基己氧基)-1,4-伸苯基伸乙烯基)(MEH-PPV)等之聚伸苯基伸乙烯基衍生物、聚(3-烷基噻吩)(PAT)等的聚噻吩衍生物、聚乙烯基咔唑(PVCz)等。 Light-emitting polymer materials include, for example, polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), and poly (2-methoxy-5- (2'-ethylhexyloxy)- Polyphenylene vinylene derivatives such as 1,4-phenylene vinylene (MEH-PPV), polythiophene derivatives such as poly (3-alkylthiophene) (PAT), polyvinylcarbazole ( PVCz) and so on.

溶劑可列舉例如甲苯、二甲苯、氯仿等。溶解或均勻分散法,可列舉例如攪拌、加熱攪拌、超音波分散等的方法。 Examples of the solvent include toluene, xylene, and chloroform. Examples of the dissolution or uniform dispersion method include methods such as stirring, heating and stirring, and ultrasonic dispersion.

塗佈方法無特別限定,可列舉例如噴墨法、噴霧法、浸漬法、旋轉塗佈法、轉印印刷法、輥塗法、刷毛塗佈等。又,塗佈係在氮、氬等的惰性氣體下進行為佳。 The coating method is not particularly limited, and examples thereof include an inkjet method, a spray method, a dipping method, a spin coating method, a transfer printing method, a roll coating method, and a bristle coating method. The coating is preferably performed under an inert gas such as nitrogen or argon.

燒成方法可列舉例如在惰性氣體下或真空中,以烤箱或加熱板進行加熱的方法。 Examples of the firing method include a method of heating in an oven or a hot plate under an inert gas or in a vacuum.

[實施例] [Example]

以下,舉合成例及實施例,更具體說明本發明,但本發明不限於下述實施例。又,使用之裝置如下。 Hereinafter, the present invention will be described more specifically with reference to synthesis examples and examples, but the present invention is not limited to the following examples. The equipment used is as follows.

(1)基板洗淨:長州產業(股)製基板洗淨裝置(減壓電漿方式) (1) Substrate cleaning: Substrate cleaning device made by Changzhou Industry Co., Ltd. (decompression plasma system)

(2)清漆之塗佈:Mikasa(股)製、旋轉塗佈機MS-A100 (2) Coating of varnish: Mikasa (strand), spin coater MS-A100

(3)膜厚測定:(股)小坂研究所製、微細形狀測定機Surfcorder ET-4000 (3) Film thickness measurement: Surfcorder ET-4000, a micro-shape measuring machine manufactured by Kosaka Laboratory

(4)EL元件之製作:長州產業(股)製、多機能蒸鍍裝置系統C-E2L1G1-N (4) Production of EL elements: Multi-function vapor deposition system C-E2L1G1-N made by Changzhou Industry Co., Ltd.

(5)EL元件之亮度等的測定:(有)Tech world製、I-V-L測定系統 (5) Measurement of EL element brightness, etc .: (with) Tech world, I-V-L measurement system

(6)EL元件之壽命測量(耐久性評價):(股)E etch Sea製有機EL亮度壽命評價系統PEL-105S (6) EL element life measurement (durability evaluation): (stock) organic EL brightness life evaluation system PEL-105S manufactured by Eetch Sea

(7)NMR測量:日本電子(股)製JNM-ECX300 FT NMR SYSTEM (7) NMR measurement: JNM-ECX300 FT NMR SYSTEM manufactured by Japan Electronics Co., Ltd.

(8)MS測量:Bruker(股)製autoflex III smartbem (8) MS measurement: Bruker (stock) autoflex III smartbem

[合成例1]噻吩衍生物1(式(1-1))之合成 [Synthesis Example 1] Synthesis of thiophene derivative 1 (formula (1-1)) [1]5-三丁基甲錫烷基(stannyl)-2,2’-雙噻吩之合成 [1] Synthesis of 5-tributylstannyl-2,2'-bisthiophene

Figure TWI614249BD00013
Figure TWI614249BD00013

將2,2’-雙噻吩(東京化成工業(股)製)4.0g置入反應容器中,進行氮取代後,加入四氫呋喃120mL,冷卻至-78℃。保持-78℃的狀態下,滴下正丁基鋰之正己烷溶液14.7mL(濃度:1.64mol/L)後,攪拌30分鐘。於其中滴下三-n-丁基氯錫烷7.8mL(d1.20)後, 攪拌10分鐘後,昇溫至室溫進行攪拌。6小時後,將反應液濃縮,所得之殘渣中加入n-己烷50mL,藉由過濾除去不溶物(塊狀物(cake)洗淨:n-己烷30mL)。將所得之濾液進行濃縮‧乾燥,得到含有5-三丁基甲錫烷基-2,2’-雙噻吩之暗紅色的油12.64g。未再進行純化,本步驟之收率為100%(理論收量10.96g),算出純度(10.96/12.64×100=86.7%),作為下步驟的原料使用。 4.0 g of 2,2'-bisthiophene (manufactured by Tokyo Chemical Industry Co., Ltd.) was placed in a reaction vessel, and after nitrogen substitution, 120 mL of tetrahydrofuran was added and cooled to -78 ° C. While maintaining -78 ° C, 14.7 mL (concentration: 1.64 mol / L) of n-hexane solution of n-butyllithium was dropped, and then stirred for 30 minutes. After dripping 7.8 mL (d1.20) of tri-n-butylchlorostannane into it, After stirring for 10 minutes, the temperature was raised to room temperature and stirred. After 6 hours, the reaction solution was concentrated, and 50 mL of n-hexane was added to the obtained residue, and insoluble matter was removed by filtration (cake washing: 30 mL of n-hexane). The obtained filtrate was concentrated and dried to obtain 12.64 g of a dark red oil containing 5-tributylstannyl-2,2'-bisthiophene. Without further purification, the yield in this step was 100% (theoretical yield 10.96 g), and the purity (10.96 / 12.64 × 100 = 86.7%) was calculated and used as the raw material in the next step.

[2]噻吩衍生物1之合成 [2] Synthesis of thiophene derivative 1

Figure TWI614249BD00014
Figure TWI614249BD00014

將三丁基苯基胺(東京化成工業(股)製)2.0g及Pd(PPh3)4 0.24g置入反應容器中,進行氮取代後,添加另外預先調製之[1]所合成之5-三丁基甲錫烷基-2,2’-雙噻吩7.8g(純度86.7%)之二甲基甲醯胺(DMF)溶液100mL。以110℃攪拌2.5小時後,使反應液以1.5L之甲醇進行再沉澱。使漿料以室溫攪拌15小時後,進行過濾,所得之濾物中添加甲苯90mL、乙醇10mL及活性碳0.75g,在迴流條件下攪拌1小時。在熱時進行過濾,將所得之濾液在攪拌的狀態下冷卻至0℃,在0℃下繼續 攪拌2小時。將漿料過濾,濾物經乾燥(80℃、2小時)得到目的之噻吩衍生物1(1.4g)(收率47%)。1H-NMR及TOF-MS之測量結果如以下所示。 2.0 g of tributylphenylamine (manufactured by Tokyo Chemical Industry Co., Ltd.) and 0.24 g of Pd (PPh 3 ) 4 were placed in a reaction vessel, and after nitrogen substitution, 5 prepared by [1] prepared in advance was added. -100 mL of a dimethylformamide (DMF) solution of 7.8 g (purity 86.7%) of tributylstannyl-2,2'-bisthiophene. After stirring at 110 ° C for 2.5 hours, the reaction solution was reprecipitated with 1.5 L of methanol. The slurry was stirred at room temperature for 15 hours, and then filtered. 90 mL of toluene, 10 mL of ethanol, and 0.75 g of activated carbon were added to the obtained filtrate, and the mixture was stirred under reflux for 1 hour. Filtration was performed while hot, and the obtained filtrate was cooled to 0 ° C with stirring, and stirring was continued at 0 ° C for 2 hours. The slurry was filtered, and the filtrate was dried (80 ° C, 2 hours) to obtain the intended thiophene derivative 1 (1.4 g) (yield: 47%). The measurement results of 1 H-NMR and TOF-MS are shown below.

1H-NMR(300MHz,CDCl3)δ[ppm]:7.51(d,J=8.4Hz,6H),7.13-7.22(m,18H),7.01-7.04(m,3H)。 1 H-NMR (300 MHz, CDCl 3 ) δ [ppm]: 7.51 (d, J = 8.4 Hz, 6H), 7.13-7.22 (m, 18H), 7.01-7.04 (m, 3H).

MALDI-TOF-MS m/Z found:737.29([M]+ calcd:737.05)。 MALDI-TOF-MS m / Z found: 737.29 ([M] + calcd: 737.05).

[實施例1-1] [Example 1-1]

使噻吩衍生物1(0.077g)及磷鎢酸(PTA、關東化學(股)製)0.387g溶解於N,N-二甲基乙醯胺7.5g中。所得之溶液中加入二乙二醇二甲.基醚7.5g經攪拌後,於其中加入五氟苯基三乙氧基矽烷0.014g,進行攪拌調製電荷輸送性清漆。 0.387 g of thiophene derivative 1 (0.077 g) and phosphotungstic acid (PTA, manufactured by Kanto Chemical Co., Ltd.) were dissolved in 7.5 g of N, N-dimethylacetamide. To the obtained solution, 7.5 g of diethylene glycol dimethyl ether was added, and after stirring, 0.014 g of pentafluorophenyltriethoxysilane was added thereto, and the charge-transporting varnish was prepared by stirring.

[實施例1-2及1-3] [Examples 1-2 and 1-3]

除了將噻吩衍生物1及PTA之使用量分別設定為0.042g及0.422g(實施例1-2)、0.022g及0.353g(實施例1-3)外,與實施例1-1同樣的方法調製電荷輸送性清漆。 The method was the same as that of Example 1-1, except that the amounts of thiophene derivative 1 and PTA were set to 0.042 g and 0.422 g (Example 1-2), 0.022 g, and 0.353 g (Example 1-3). Modulates charge-transporting varnish.

[實施例1-4] [Example 1-4]

使噻吩衍生物1 0.062g及PTA0.309g溶解於1,3-二甲 基-2-咪唑啉酮3.6g中。所得之溶液中加入1,3-丁二醇2.4g及二乙二醇二甲基醚6.0g經攪拌後,於其中加入F4TCNQ(東京化成工業(股)製)0.026g,進行攪拌調製電荷輸送性清漆。 0.062 g of thiophene derivative and 0.309 g of PTA were dissolved in 1,3-dimethylformaldehyde In 3.6 g of 2-imidazolinone. To the obtained solution were added 2.4 g of 1,3-butanediol and 6.0 g of diethylene glycol dimethyl ether, and after stirring, 0.026 g of F4TCNQ (manufactured by Tokyo Chemical Industry Co., Ltd.) was added to the solution, and the charge was transferred by stirring. Sexual varnish.

[實施例1-5] [Example 1-5]

除了將噻吩衍生物1及PTA之使用量設定為0.034g及0.337g外,與實施例1-4同樣的方法調製電荷輸送性清漆。 A charge-transporting varnish was prepared in the same manner as in Examples 1-4 except that the amounts of thiophene derivative 1 and PTA were set to 0.034 g and 0.337 g.

[實施例1-6] [Example 1-6]

使噻吩衍生物1(0.052g)及PTA(0.258g)溶解於1,3-二甲基-2-咪唑啉酮3g中。所得之溶液中加入1,3-丁二醇3g及二乙二醇二甲基醚4g經攪拌後,於其中加入F4TCNQ(0.031g)進行調製電荷輸送性清漆。 Thiophene derivative 1 (0.052 g) and PTA (0.258 g) were dissolved in 3 g of 1,3-dimethyl-2-imidazolinone. To the obtained solution, 3 g of 1,3-butanediol and 4 g of diethylene glycol dimethyl ether were added, and after stirring, F4TCNQ (0.031 g) was added thereto to prepare a charge-transporting varnish.

[實施例2-1] [Example 2-1]

使用旋轉塗佈機將實施例1-1所得之清漆塗佈於ITO基板後,以50℃乾燥5分鐘,接著在大氣環境下,以150℃進行10分鐘燒成,而在ITO基板上形成30nm之均勻薄膜。ITO基板係使用在表面上將銦錫氧化物(ITO)以膜厚150nm經圖型化後之25mm×25mm×0.7t的玻璃基板,在使用前藉由O2電漿洗淨裝置(150W、30秒鐘)去除表面上的雜質。 After applying the varnish obtained in Example 1-1 on an ITO substrate using a spin coater, it was dried at 50 ° C for 5 minutes, and then fired at 150 ° C for 10 minutes in an atmospheric environment to form 30 nm on the ITO substrate. A uniform film. The ITO substrate is a 25mm × 25mm × 0.7t glass substrate formed by patterning indium tin oxide (ITO) with a film thickness of 150nm on the surface. Before use, it is cleaned by an O 2 plasma cleaning device (150W, 30 seconds) to remove impurities from the surface.

接著,使用蒸鍍裝置(真空度1.0×10-5Pa),對於形成有薄膜之ITO基板,依序層合N,N’-雙(1-萘基)-N,N’-雙苯基-聯苯胺(α-NPD)、參(8-羥基喹啉)鋁(III)(Alq3)、氟化鋰及鋁之薄膜,得到有機EL元件。此時,關於蒸鍍速率,其中α-NPD、Alq3及鋁為0.2nm/秒,氟化鋰為0.02nm/秒的條件下分別進行,膜厚分別為30nm、40nm、0.5nm及120nm。 Next, N, N'-bis (1-naphthyl) -N, N'-bisphenyl was sequentially laminated on the ITO substrate on which the thin film was formed using a vapor deposition apparatus (vacuum degree: 1.0 × 10 -5 Pa). -Thin films of benzidine (α-NPD), ginseng (8-hydroxyquinoline) aluminum (III) (Alq 3 ), lithium fluoride, and aluminum to obtain an organic EL device. At this time, regarding the evaporation rate, α-NPD, Alq 3, and aluminum were performed at 0.2 nm / sec, and lithium fluoride was performed at 0.02 nm / sec. The film thicknesses were 30 nm, 40 nm, 0.5 nm, and 120 nm, respectively.

此外,為了防止因空氣中之氧、水等之影響所導致的特性劣化,因此有機EL元件藉由密封基板密封後,評價其特性。密封係依據以下順序施行。 In addition, in order to prevent deterioration of characteristics due to the influence of oxygen, water, and the like in the air, the organic EL element is sealed with a sealing substrate, and its characteristics are evaluated. Sealing is performed in the following order.

在氧濃度2ppm以下、露點-85℃以下之氮環境中,在密封基板之間收納有機EL元件,並藉由接著材料(Nagase Chemtex(股)製XNR5516Z-B1)貼合密封基板。此時,將捕水劑(Dynic(股)製HD-071010W-40)與有機EL元件一同收納於密封基板內。 In a nitrogen environment with an oxygen concentration of 2 ppm or less and a dew point of -85 ° C or less, an organic EL element is housed between the sealing substrates, and the sealing substrate is bonded with an adhesive material (XNR5516Z-B1 made by Nagase Chemtex). At this time, a water-capturing agent (HD-071010W-40, manufactured by Dynic Co., Ltd.) was housed in the sealed substrate together with the organic EL element.

對於已貼合之密封基板,照射UV光(波長:365nm、照射量:6000mJ/cm2)後,在80℃下施行1小時退火處理而使接著材料硬化。 The bonded sealing substrate was irradiated with UV light (wavelength: 365 nm, irradiation amount: 6000 mJ / cm 2 ), and then annealed at 80 ° C. for 1 hour to harden the adhesive material.

[實施例2-2~2-6] [Examples 2-2 to 2-6]

除了分別使用實施例1-2~1-6所得的清漆來取代實施例1-1所得的清漆外,與實施例2-1相同的方法製作有機EL元件。 An organic EL device was produced in the same manner as in Example 2-1, except that the varnish obtained in Examples 1-2 to 1-6 was used instead of the varnish obtained in Example 1-1.

測量各元件之驅動電壓5V時之電流密度及亮 度。結果如表1所示。 Measure the current density and brightness when the driving voltage of each component is 5V degree. The results are shown in Table 1.

Figure TWI614249BD00015
Figure TWI614249BD00015

如表1所示,藉由本發明之清漆可實現具有優異的亮度特性的有機EL元件。 As shown in Table 1, the varnish of the present invention can realize an organic EL element having excellent brightness characteristics.

對以實施例2-1~2-6製作的元件進行耐久性試驗。亮度之半衰期(初期亮度5,000cd/m2)如表2所示。 The elements manufactured in Examples 2-1 to 2-6 were subjected to a durability test. The half-life of luminance (initial luminance 5,000 cd / m 2 ) is shown in Table 2.

Figure TWI614249BD00016
Figure TWI614249BD00016

如表2所示,藉由本發明之清漆可實現具有優異的耐久性的有機EL元件。 As shown in Table 2, an organic EL device having excellent durability can be realized by the varnish of the present invention.

Claims (10)

一種電荷輸送性清漆,其特徵係含有由式(1)表示之噻吩衍生物所構成之電荷輸送性物質、摻雜物及有機溶劑,
Figure TWI614249BC00001
(式中,R1~R21各自獨立表示氫原子、鹵素原子、硝基、氰基、醛基、羥基、硫醇基、羧酸基、可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基、可經Z2取代之碳數6~20之芳基、-C(O)Y1基、-OY2基、-SY3基、-C(O)OY4基、-OC(O)Y5基、-C(O)NHY6基或-C(O)NY7Y8基,Y1~Y8各自獨立表示可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基或可經Z2取代之碳數6~20之芳基,Z1表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基或可經Z3取代之碳數6~20之芳基,Z2表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z3取代之碳數1~20之烷基、可經Z3取代之碳數2~20之烯基或可經Z3取代之碳數 2~20之炔基,Z3表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基或羧酸基,n1~n3各自獨立表示2~10之整數)。
A charge-transporting varnish comprising a charge-transporting substance, a dopant, and an organic solvent composed of a thiophene derivative represented by formula (1),
Figure TWI614249BC00001
(Wherein R 1 to R 21 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a carboxylic acid group, and an alkane having 1 to 20 carbon atoms which may be substituted by Z 1 group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with an alkynyl group of a carbon number of 2 to 20, Z 2 may be substituted having 6 to 20 carbon atoms of the aryl group, -C ( O) Y 1 group, -OY 2 group, -SY 3 group, -C (O) OY 4 group, -OC (O) Y 5 group, -C (O) NHY 6 group, or -C (O) NY 7 group Y 8, Y 1 ~ Y 8 each independently represent Z 1 may be substituted having 1 to 20 carbon atoms of the alkyl group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with a carbon number of An alkynyl group of 2 to 20 or an aryl group of 6 to 20 carbon atoms that can be substituted by Z 2 ; Z 1 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, and a carboxylic acid group Or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 3 , Z 2 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, and may be substituted by Z 3 Alkyl group having 1 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms which can be substituted with Z 3 or alkynyl group having 2 to 20 carbon atoms which can be substituted with Z 3 , Z 3 represents a halogen atom, a nitro group, a cyanide Group, aldehyde group, hydroxyl group, thiol group, sulfone Group or a carboxylic acid group, n 1 ~ n 3 each independently represents an integer of from 2 to 10).
如申請專利範圍第1項之電荷輸送性清漆,其中上述摻雜物包含雜多酸。 For example, the charge-transporting varnish according to item 1 of the application, wherein the dopant includes a heteropoly acid. 如申請專利範圍第1或2項之電荷輸送性清漆,其係再包含有機矽烷化合物。 For example, the charge-transporting varnish according to item 1 or 2 of the patent application scope further comprises an organic silane compound. 如申請專利範圍第1~3項中任一項之電荷輸送性清漆,其係再包含下述式(6)表示之四氰基苯醌二甲烷化合物,
Figure TWI614249BC00002
(式中,R101~R104各自獨立表示氫原子或鹵素原子,但至少1個為鹵素原子)。
For example, the charge-transporting varnish according to any one of claims 1 to 3 in the patent application scope further comprises a tetracyanobenzoquinone dimethane compound represented by the following formula (6),
Figure TWI614249BC00002
(In the formula, R 101 to R 104 each independently represent a hydrogen atom or a halogen atom, but at least one is a halogen atom.)
一種電荷輸送性薄膜,其特徵係使用如申請專利範圍第1~4項中任一項之電荷輸送性清漆所製作。 A charge-transporting film characterized by using a charge-transporting varnish according to any one of claims 1 to 4 of the scope of patent application. 一種有機電致發光元件,其特徵係具有如申請專利範圍第5項之電荷輸送性薄膜。 An organic electroluminescence device is characterized by having a charge-transporting film as described in item 5 of the patent application scope. 如申請專利範圍第6項之有機電致發光元件,其中上述電荷輸送性薄膜為電洞注入層或電洞輸送層。 For example, the organic electroluminescence device according to item 6 of the patent application, wherein the charge transporting film is a hole injection layer or a hole transport layer. 一種電荷輸送性薄膜之製造方法,其特徵係將如申請專利範圍第1~4項中任一項之電荷輸送性清漆塗佈於基 材上進行燒成者。 A method for manufacturing a charge-transporting film, which is characterized in that a charge-transporting varnish according to any one of claims 1 to 4 is applied to a substrate Fired on wood. 一種有機電致發光元件之製造方法,其特徵係使用如申請專利範圍第4項之電荷輸送性薄膜。 A method for manufacturing an organic electroluminescence element, which uses a charge-transporting film such as the item 4 in the scope of patent application. 一種電荷輸送性材料,其特徵係含有由式(1)表示之噻吩衍生物所構成之電荷輸送性物質及摻雜物,
Figure TWI614249BC00003
(式中,R1~R21各自獨立表示氫原子、鹵素原子、硝基、氰基、醛基、羥基、硫醇基、羧酸基、可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基、可經Z2取代之碳數6~20之芳基、-C(O)Y1基、-OY2基、-SY3基、-C(O)OY4基、-OC(O)Y5基、-C(O)NHY6基或-C(O)NY7Y8基,Y1~Y8各自獨立表示可經Z1取代之碳數1~20之烷基、可經Z1取代之碳數2~20之烯基、可經Z1取代之碳數2~20之炔基或可經Z2取代之碳數6~20之芳基,Z1表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基或可經Z3取代之碳數6~20之芳基,Z2表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基、羧酸基、可經Z3取代之碳數1~20之烷基、 可經Z3取代之碳數2~20之烯基或可經Z3取代之碳數2~20之炔基,Z3表示鹵素原子、硝基、氰基、醛基、羥基、硫醇基、磺酸基或羧酸基,n1~n3各自獨立表示2~10之整數)。
A charge transporting material characterized by containing a charge transporting substance and a dopant composed of a thiophene derivative represented by formula (1),
Figure TWI614249BC00003
(Wherein R 1 to R 21 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a carboxylic acid group, and an alkane having 1 to 20 carbon atoms which may be substituted by Z 1 group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with an alkynyl group of a carbon number of 2 to 20, Z 2 may be substituted having 6 to 20 carbon atoms of the aryl group, -C ( O) Y 1 group, -OY 2 group, -SY 3 group, -C (O) OY 4 group, -OC (O) Y 5 group, -C (O) NHY 6 group, or -C (O) NY 7 group Y 8, Y 1 ~ Y 8 each independently represent Z 1 may be substituted having 1 to 20 carbon atoms of the alkyl group, may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z 1 may be substituted with a carbon number of An alkynyl group of 2 to 20 or an aryl group of 6 to 20 carbon atoms that can be substituted by Z 2 ; Z 1 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, and a carboxylic acid group Or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 3 , Z 2 represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, and may be substituted by Z 3 Alkyl group having 1 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms which can be substituted with Z 3 or alkynyl group having 2 to 20 carbon atoms which can be substituted with Z 3 , Z 3 represents a halogen atom, a nitro group, a cyanide Group, aldehyde group, hydroxyl group, thiol group, sulfone Group or a carboxylic acid group, n 1 ~ n 3 each independently represents an integer of from 2 to 10).
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