[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

TWI607595B - Electronic device package - Google Patents

Electronic device package Download PDF

Info

Publication number
TWI607595B
TWI607595B TW105123160A TW105123160A TWI607595B TW I607595 B TWI607595 B TW I607595B TW 105123160 A TW105123160 A TW 105123160A TW 105123160 A TW105123160 A TW 105123160A TW I607595 B TWI607595 B TW I607595B
Authority
TW
Taiwan
Prior art keywords
electronic component
layer
component package
insulating layer
sidewall
Prior art date
Application number
TW105123160A
Other languages
Chinese (zh)
Other versions
TW201804639A (en
Inventor
張國彥
葉佳俊
鄭國興
吳幸怡
Original Assignee
元太科技工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 元太科技工業股份有限公司 filed Critical 元太科技工業股份有限公司
Priority to TW105123160A priority Critical patent/TWI607595B/en
Application granted granted Critical
Publication of TWI607595B publication Critical patent/TWI607595B/en
Publication of TW201804639A publication Critical patent/TW201804639A/en

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Description

電子元件封裝體Electronic component package

本發明是有關於一種封裝體,且特別是有關於一種電子元件封裝體。The present invention relates to a package, and more particularly to an electronic component package.

隨著電子產品中電子元件的設計日趨精密,一些電子元件對於水氣較為敏感。以有機薄膜電晶體陣列為例,水氣的滲入容易造成有機薄膜電晶體的老化而無法正常運作。一般來說,有機薄膜電晶體陣列是由依序堆疊的多個膜層構成。這些膜層有一部份可以由陣列的中央連續地延伸至邊緣。水氣及氧氣可能透過延伸到邊緣的膜層的側邊滲入至內部,從而加速有機薄膜電晶體的老化,這將造成電子產品壽命的減短,以致無法符合市場的需求。As electronic components in electronic products are becoming more sophisticated, some electronic components are more sensitive to moisture. Taking an organic thin film transistor array as an example, the infiltration of moisture can easily cause the aging of the organic thin film transistor to fail to operate normally. Generally, an organic thin film transistor array is composed of a plurality of film layers stacked in sequence. A portion of these layers may extend continuously from the center of the array to the edges. Water vapor and oxygen may penetrate into the interior through the side of the film that extends to the edge, thereby accelerating the aging of the organic thin film transistor, which will result in a shortened life of the electronic product, which may not meet the market demand.

本發明提供一種電子元件封裝體,可降低電子元件受到從側面來的水氣而破壞的機率。The present invention provides an electronic component package which can reduce the probability that an electronic component will be damaged by moisture from a side surface.

本發明提供的一種電子元件封裝體包括一承載板、一電子元件、一第一絕緣層以及一阻隔層。承載板包括一中心區、一內邊緣區以及一外邊緣區,其中內邊緣區位於中心區與外邊緣區之間。電子元件配置於承載板上且位於中心區。第一絕緣層配置於承載板上並重疊於電子元件,且第一絕緣層由中心區延伸至內邊緣區。阻隔層設置於承載板上,且阻隔層露出中央區,其中阻隔層包括一側壁接觸部以及一延伸部。側壁接觸部圍繞第一絕緣層的側表面,且延伸部由側壁接觸部以遠離第一絕緣層的方向延伸至外邊緣區。An electronic component package provided by the present invention includes a carrier board, an electronic component, a first insulating layer and a barrier layer. The carrier plate includes a central zone, an inner edge zone and an outer edge zone, wherein the inner edge zone is located between the central zone and the outer edge zone. The electronic component is disposed on the carrier board and located in the central area. The first insulating layer is disposed on the carrier board and overlaps the electronic component, and the first insulating layer extends from the central region to the inner edge region. The barrier layer is disposed on the carrier plate, and the barrier layer is exposed to the central region, wherein the barrier layer includes a sidewall contact portion and an extension portion. The sidewall contact surrounds a side surface of the first insulating layer, and the extension extends from the sidewall contact to the outer edge region in a direction away from the first insulating layer.

在本發明的一實施例中,上述的阻隔層更包括一覆蓋部,其由側壁接觸部以遠離延伸部的方向延伸而覆蓋於第一絕緣層上方,且覆蓋部暴露出中心區。In an embodiment of the invention, the barrier layer further includes a cover portion that extends from the sidewall contact portion in a direction away from the extension portion over the first insulation layer, and the cover portion exposes the central region.

在本發明的一實施例中,上述的電子元件包括一有機薄膜電晶體,其中有機薄膜電晶體包括一閘極、一源極、一汲極以及一有機半導體通道層。閘極的面積重疊於有機半導體通道層的面積。第一絕緣層位於閘極與有機半導體通道層之間。源極與汲極連接有機半導體通道層。In an embodiment of the invention, the electronic component includes an organic thin film transistor, wherein the organic thin film transistor includes a gate, a source, a drain, and an organic semiconductor channel layer. The area of the gate overlaps the area of the organic semiconductor channel layer. The first insulating layer is between the gate and the organic semiconductor channel layer. The source and the drain are connected to the organic semiconductor channel layer.

在本發明的一實施例中,上述的側壁接觸部覆蓋第一絕緣層的側表面。In an embodiment of the invention, the sidewall contact portion covers a side surface of the first insulating layer.

在本發明的一實施例中,上述的電子元件封裝體更包括一第二絕緣層,第一絕緣層配置於第二絕緣層與承載板之間。In an embodiment of the invention, the electronic component package further includes a second insulating layer disposed between the second insulating layer and the carrier.

在本發明的一實施例中,上述的第二絕緣層的面積超出第一絕緣層的側表面而具有一側壁部分,側壁部分位於第一絕緣層的側表面與側壁接觸部之間。In an embodiment of the invention, the second insulating layer has an area exceeding a side surface of the first insulating layer and has a sidewall portion, and the sidewall portion is located between the side surface of the first insulating layer and the sidewall contact portion.

在本發明的一實施例中,上述的電子元件封裝體更包括一側壁阻擋結構,設置在內邊緣區中,且貫穿第一絕緣層並構成擋牆狀。In an embodiment of the invention, the electronic component package further includes a sidewall blocking structure disposed in the inner edge region and extending through the first insulating layer to form a barrier wall.

在本發明的一實施例中,上述的側壁阻擋結構包括在垂直該承載板的方向上堆疊的多個子阻擋結構。子阻擋結構的材質包括金屬。In an embodiment of the invention, the sidewall blocking structure includes a plurality of sub-barrier structures stacked in a direction perpendicular to the carrier. The material of the sub-blocking structure includes metal.

在本發明的一實施例中,上述的阻隔層的延伸部在遠離承載板的一上側具有凹凸表面。其中凹凸表面為鋸齒狀、微杯狀、階梯狀或以上任選一種以上的組合。In an embodiment of the invention, the extension of the barrier layer has an uneven surface on an upper side away from the carrier. The uneven surface is a zigzag shape, a micro cup shape, a step shape or a combination of at least one of the above.

在本發明的一實施例中,上述的阻隔層的材料為氮化矽(SiNx)、氧化矽(SiOx)或多層氮化矽/氧化矽(SiNx/SiOx)薄膜。In an embodiment of the invention, the material of the barrier layer is tantalum nitride (SiNx), yttrium oxide (SiOx) or a multilayer tantalum nitride/yttria (SiNx/SiOx) film.

在本發明的一實施例中,上述的電子元件封裝體更包括一有機緩衝層、一底阻隔層、一顯示介質層以及一保護層。有機緩衝層配置於電子元件與承載板之間。底阻隔層配置於有機緩衝層與承載板之間。顯示介質層配置於電子元件上,其中顯示介質層與電子元件電性相連接並用以顯示影像。保護層配置於顯示介質層上。In an embodiment of the invention, the electronic component package further includes an organic buffer layer, a bottom barrier layer, a display dielectric layer, and a protective layer. The organic buffer layer is disposed between the electronic component and the carrier board. The bottom barrier layer is disposed between the organic buffer layer and the carrier plate. The display medium layer is disposed on the electronic component, wherein the display medium layer is electrically connected to the electronic component and used to display an image. The protective layer is disposed on the display medium layer.

在本發明的一實施例中,上述的阻隔層的延伸部接觸底阻隔層。In an embodiment of the invention, the extension of the barrier layer contacts the bottom barrier layer.

在本發明的一實施例中,上述的阻隔層的側壁接觸部覆蓋有機緩衝層的側表面。In an embodiment of the invention, the sidewall contact portion of the barrier layer covers a side surface of the organic buffer layer.

本發明提供的另一種電子元件封裝體包括一承載板、一電子元件、多個絕緣層以及一側壁阻擋結構。承載板包括一中心區以及一邊緣區。電子元件配置於承載板上並位於中心區。多個絕緣層配置於承載板上並重疊於電子元件,其中多個絕緣層分別由中心區延伸至邊緣區中。側壁阻擋結構設置在邊緣區中,其中側壁阻擋結構貫穿多個絕緣層並構成擋牆狀。Another electronic component package provided by the present invention includes a carrier board, an electronic component, a plurality of insulating layers, and a sidewall blocking structure. The carrier board includes a central area and an edge area. The electronic component is disposed on the carrier board and located in the central area. A plurality of insulating layers are disposed on the carrier board and overlapped with the electronic component, wherein the plurality of insulating layers extend from the central region to the edge regions, respectively. The sidewall blocking structure is disposed in the edge region, wherein the sidewall blocking structure penetrates the plurality of insulating layers and constitutes a barrier wall shape.

在本發明的一實施例中,上述的側壁阻擋結構包括在垂直承載板的方向上堆疊的多個子阻擋結構。In an embodiment of the invention, the sidewall blocking structure comprises a plurality of sub-barrier structures stacked in a direction of a vertical carrier.

在本發明的一實施例中,上述多個子阻擋結構的其中一者電性連接電子元件。各子阻擋結構的材質包括金屬。In an embodiment of the invention, one of the plurality of sub-blocking structures is electrically connected to the electronic component. The material of each sub-blocking structure includes metal.

在本發明的一實施例中,上述的側壁阻檔結構電性浮置。In an embodiment of the invention, the sidewall blocking structure is electrically floating.

在本發明的一實施例中,上述的電子元件包括一有機薄膜電晶體。多個絕緣層包括一第一絕緣層與一第二絕緣層。有機薄膜電晶體包括一閘極、一源極、一汲極以及一有機半導體通道層。閘極的面積重疊於有機半導體通道層的面積。第一絕緣層位於閘極與有機半導體通道層之間。源極與汲極連接有機半導體通道層,且第一絕緣層配置於第二絕緣層與承載板之間。In an embodiment of the invention, the electronic component includes an organic thin film transistor. The plurality of insulating layers include a first insulating layer and a second insulating layer. The organic thin film transistor includes a gate, a source, a drain, and an organic semiconductor channel layer. The area of the gate overlaps the area of the organic semiconductor channel layer. The first insulating layer is between the gate and the organic semiconductor channel layer. The source and the drain are connected to the organic semiconductor channel layer, and the first insulating layer is disposed between the second insulating layer and the carrier.

在本發明的一實施例中,上述的電子元件封裝體更包括一有機緩衝層、一底阻隔層、一顯示介質層以及一保護層。有機緩衝層設置於電子元件與承載板之間。底阻隔層設置於有機緩衝層與承載板之間。顯示介質層設置於電子元件上,其中顯示介質層與電子元件電性相連接並用以顯示影像。保護層設置於顯示介質層上。In an embodiment of the invention, the electronic component package further includes an organic buffer layer, a bottom barrier layer, a display dielectric layer, and a protective layer. The organic buffer layer is disposed between the electronic component and the carrier board. The bottom barrier layer is disposed between the organic buffer layer and the carrier plate. The display medium layer is disposed on the electronic component, wherein the display medium layer is electrically connected to the electronic component and used to display an image. The protective layer is disposed on the display medium layer.

基於上述,本發明電子元件封裝體中,阻擋結構在垂直於承載板所在平面上具有一定高度,而可在電子元件封裝體的周圍形成擋牆一般的結構。如此一來,可降低電子元件封裝體中電子元件受到從側面來的水氣而破壞的機率。Based on the above, in the electronic component package of the present invention, the barrier structure has a certain height on a plane perpendicular to the carrier plate, and a general structure of the barrier wall can be formed around the electronic component package. As a result, the probability that the electronic component in the electronic component package is damaged by the moisture from the side can be reduced.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

圖1為本發第一實施例的電子元件封裝體的剖面示意圖。請參照圖1,電子元件封裝體10a包括承載板100、電子元件110、第一絕緣層122以及阻隔層130。承載板100包括一中心區AA以及在中心區AA周邊的邊緣區。邊緣區可以劃分成一內邊緣區IB以及一外邊緣區OB。內邊緣區IB位於中心區AA與外邊緣區OB之間。在本實施例中,承載板100可為硬質基板,例如為玻璃基板或是其他具備良好機械強度的基板,但不以此為限。承載板100用以提供電子元件封裝體10a合適的支撐。 1 is a schematic cross-sectional view showing an electronic component package of the first embodiment of the present invention. Referring to FIG. 1 , the electronic component package 10 a includes a carrier board 100 , an electronic component 110 , a first insulating layer 122 , and a barrier layer 130 . The carrier board 100 includes a center area AA and an edge area around the center area AA. The edge region can be divided into an inner edge region IB and an outer edge region OB. The inner edge region IB is located between the central area AA and the outer edge area OB. In this embodiment, the carrier board 100 can be a rigid substrate, such as a glass substrate or other substrate having good mechanical strength, but is not limited thereto. The carrier board 100 is used to provide suitable support for the electronic component package 10a.

電子元件110設置於承載板100上且位於承載板100的中心區AA。第一絕緣層122配置於承載板100上並重疊於電子元件110,且第一絕緣層122由承載板100的中心區AA延伸至內邊緣區IB。阻隔層130設置於承載板100上,且阻隔層130包括一側壁接觸部132及一延伸部134。側壁接觸部132圍繞第一絕緣層122的一側表面S1,且延伸部134由側壁接觸部132以遠離第一絕緣層122的方向延伸至外邊緣區OB。 The electronic component 110 is disposed on the carrier board 100 and located in the central area AA of the carrier board 100. The first insulating layer 122 is disposed on the carrier board 100 and overlaps the electronic component 110, and the first insulating layer 122 extends from the central area AA of the carrier board 100 to the inner edge area IB. The barrier layer 130 is disposed on the carrier 100, and the barrier layer 130 includes a sidewall contact portion 132 and an extension portion 134. The sidewall contact portion 132 surrounds one side surface S1 of the first insulating layer 122, and the extension portion 134 extends from the sidewall contact portion 132 in a direction away from the first insulating layer 122 to the outer edge region OB.

此外,電子元件封裝體10a可依需求更包括一或多條走線M1,設置於承載板100上,其中走線M1可設置於內邊緣區IB中並電性連接於電子元件110以做為提供電子元件110與驅動電路的電傳輸路徑,但本發明不以此為限。具體來說,在走線M1 電性連接於電子元件110的狀況下,走線M1可用以傳遞訊號。不過,在走線M1不電性連接於電子元件110的狀況下,走線M1可以做為靜電防護線路或是提供電性屏蔽的功能。此外,在其他實施例中,電子元件封裝體10a的內邊緣區IB中可選擇性地省略走線M1,本發明不以此為限。 In addition, the electronic component package 10a may further include one or more traces M1 on the carrier board 100, wherein the trace M1 may be disposed in the inner edge region IB and electrically connected to the electronic component 110 as The electrical transmission path of the electronic component 110 and the driving circuit is provided, but the invention is not limited thereto. Specifically, in the trace M1 In the case of electrical connection to the electronic component 110, the trace M1 can be used to transmit a signal. However, in the case where the trace M1 is not electrically connected to the electronic component 110, the trace M1 can function as an electrostatic protection circuit or provide an electrical shield. In addition, in other embodiments, the routing M1 may be selectively omitted in the inner edge region IB of the electronic component package 10a, and the invention is not limited thereto.

為了清楚說明,本說明書中的「外側」是指在承載板100中中心區AA朝向外邊緣區OB的一側。反之,「內側」是指在承載板100中外邊緣區OB朝向中心區AA的一側。 For the sake of clarity, "outside" in this specification means the side of the carrier sheet 100 in which the central area AA faces the outer edge area OB. Conversely, "inside" refers to the side of the carrier sheet 100 in which the outer edge region OB faces the center region AA.

參照圖1,為了方便電子元件封裝體10a在製作過程中可受到穩定的支撐且在製作完成後可具備可撓性。在本實施例中,電子元件封裝體10a的承載板100可包括一軟性基板102A與一支撐基板102B,軟性基板102A設置於電子元件110與支撐基板102B之間。具體來說,軟性基板102A的材質可例如為聚亞醯胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)、聚醚碸(polyethersulfone,PES)、聚丙烯酸酯(polyacrylate,PA)、聚原冰烯(polynorbornene,PNB)、聚乙烯對苯二甲酸酯(polyethylene terephthalate,PET)、聚醚醚酮(polyetheretherketone,PEEK)、聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)或聚醚亞醯胺(polyetherimide,PEI)等可撓性材料。在電子元件封裝體10a製作完成後,可選擇性地將軟性基板102A與支撐基板102B分離。此時,承載板100可僅由軟性基板102A構成。 Referring to Fig. 1, in order to facilitate the electronic component package 10a, it can be stably supported during the manufacturing process and can be provided with flexibility after fabrication. In this embodiment, the carrier board 100 of the electronic component package 10a may include a flexible substrate 102A and a support substrate 102B. The flexible substrate 102A is disposed between the electronic component 110 and the support substrate 102B. Specifically, the material of the flexible substrate 102A may be, for example, polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyacrylate (PA), poly. Polynorbornene (PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or poly A flexible material such as polyetherimide (PEI). After the electronic component package 10a is completed, the flexible substrate 102A and the support substrate 102B can be selectively separated. At this time, the carrier board 100 may be constituted only by the flexible substrate 102A.

為了增進軟性基板102A的阻水氣特性。在本實施例中,電子元件封裝體10a可更包括一底阻隔層104,配置於電子元件110與軟性基板102A之間,且位於第一絕緣層122與軟性基板102A之間。底阻隔層104可為單層薄膜或是由多層薄膜所構成之疊層,本實施例不限定底阻隔層104之層數與構成材質。承上述,當底阻隔層104是由多層薄膜所構成之疊層時,底阻隔層104例如是由有機薄膜與無機薄膜交替堆疊所構成之疊層,或者,底阻隔層104亦可以是由多層無機薄膜堆疊所構成之疊層。當底阻隔層104是由多層無機薄膜堆疊所構成之疊層時,底阻隔層104可為氮化矽與氧化矽交替堆疊的疊層。底阻隔層104的水氣穿透率(vapor water transmission rate, VWTR)不高於10 -2g/m 2‧天,較佳係不高於10 -6g/m 2‧天。 In order to enhance the water vapor barrier property of the flexible substrate 102A. In this embodiment, the electronic component package 10a further includes a bottom barrier layer 104 disposed between the electronic component 110 and the flexible substrate 102A and between the first insulating layer 122 and the flexible substrate 102A. The bottom barrier layer 104 may be a single layer film or a laminate composed of a plurality of layers. This embodiment does not limit the number of layers and the constituent materials of the bottom barrier layer 104. In the above, when the bottom barrier layer 104 is a laminate composed of a plurality of films, the bottom barrier layer 104 is, for example, a laminate in which an organic film and an inorganic film are alternately stacked, or the bottom barrier layer 104 may be a plurality of layers. A laminate of inorganic thin film stacks. When the bottom barrier layer 104 is a laminate composed of a plurality of layers of inorganic thin films, the bottom barrier layer 104 may be a stack of alternating stacks of tantalum nitride and tantalum oxide. The vapor barrier transmission rate (VWTR) of the bottom barrier layer 104 is not higher than 10 -2 g/m 2 ‧ days, preferably not higher than 10 -6 g/m 2 ‧ days

為了釋放電子元件110與底阻隔層104之間的應力且提升電子元件110的附著力,本實施例可以選擇性地於電子元件110與底阻隔層104之間設置有機緩衝層106,以增進電子元件110的信賴性。在本實施例中,有機緩衝層106配置於電子元件110與承載板100之間且底阻隔層104位於有機緩衝層106與承載板100之間。In order to release the stress between the electronic component 110 and the bottom barrier layer 104 and improve the adhesion of the electronic component 110, the embodiment may selectively provide an organic buffer layer 106 between the electronic component 110 and the bottom barrier layer 104 to enhance the electrons. The reliability of component 110. In the present embodiment, the organic buffer layer 106 is disposed between the electronic component 110 and the carrier board 100 and the bottom barrier layer 104 is located between the organic buffer layer 106 and the carrier board 100.

電子元件110可包括薄膜電晶體(Thin Film Transistor,TFT)。詳細來說,薄膜電晶體可包括非晶矽薄膜電晶體(a-Si TFT)、微晶矽薄膜電晶體(micro-Si TFT)、多晶矽薄膜電晶體(p-Si TFT)或有機薄膜電晶體(OTFT)等等電晶體。在本實施例中,電子元件110包括一有機薄膜電晶體112但不以此為限,在其他實施例中電子元件110可更包括有電容結構、二極體或是其他構件等。有機薄膜電晶體112由多個圖案化的薄膜所構成且這些薄膜可藉由噴墨(ink-jet)、旋塗(spin coat)、柔版印刷、沉積等方法而成膜並藉由微影蝕刻法圖案化成所要的圖案。具體來說,有機薄膜電晶體112包括一閘極G、一源極S、一汲極D以及一有機半導體通道層CH。閘極G的面積重疊於有機半導體通道層CH的面積。第一絕緣層122位於閘極G與有機半導體通道層CH之間。源極S與汲極D連接該有機半導體通道層CH。在操作上,閘極G可以控制有機薄膜電晶體112的開啟(導通)與關閉(斷路)。當有機薄膜電晶體112為開啟(導通)的情形下,有機薄膜電晶體112可以允許源極S藉由有機半導體通道層CH電性導通至汲極D。The electronic component 110 may include a Thin Film Transistor (TFT). In detail, the thin film transistor may include an amorphous germanium thin film transistor (a-Si TFT), a microcrystalline silicon transistor (micro-Si TFT), a polycrystalline germanium thin film transistor (p-Si TFT), or an organic thin film transistor. (OTFT) and other transistors. In the present embodiment, the electronic component 110 includes an organic thin film transistor 112, but not limited thereto. In other embodiments, the electronic component 110 may further include a capacitor structure, a diode or other components. The organic thin film transistor 112 is composed of a plurality of patterned films and these films can be formed by inkjet (jet-jet), spin coating, flexographic printing, deposition, etc. by lithography. The etching method is patterned into a desired pattern. Specifically, the organic thin film transistor 112 includes a gate G, a source S, a drain D, and an organic semiconductor channel layer CH. The area of the gate G overlaps the area of the organic semiconductor channel layer CH. The first insulating layer 122 is located between the gate G and the organic semiconductor channel layer CH. The source S and the drain D are connected to the organic semiconductor channel layer CH. In operation, the gate G can control the opening (turning on) and closing (opening) of the organic thin film transistor 112. When the organic thin film transistor 112 is turned on (on), the organic thin film transistor 112 can allow the source S to be electrically conducted to the drain D through the organic semiconductor channel layer CH.

在本實施例中,電子元件封裝體10a更包括一第二絕緣層124。第一絕緣層122配置於第二絕緣層124與承載板100之間。此外,在本實施例中,電子元件封裝體10a可更包括配置於第二絕緣層124上的導電層M2,且導電層M2可以電性連接到汲極D。以在電子元件110開啟時,讓電子元件110藉由導電層M2電性導通至其他構件。在本實施例中,電子元件封裝體10a實際上是由堆疊在承載板100上的多個膜層所構成。首先,在承載板100上依序設置底阻隔層104以及有機緩衝層106。此時,做為有機薄膜電晶體112的源極S以及汲極D可與走線M1同為第一導電層,可同時形成在有機緩衝層106上。換言之,源極S、汲極D以及走線M1可併入同樣的製程當中。接下來,可依序形成有機半導體通道層CH、第一絕緣層122、閘極G、第二絕緣層124以及走線M2。在閘極G與走線M2形成前,可分別對第一絕緣層122與第二絕緣層124做適當的圖案化以在汲極D上形成一開口。如此一來,走線M2可藉由上述開口與汲極D電性相連接。In this embodiment, the electronic component package 10a further includes a second insulating layer 124. The first insulating layer 122 is disposed between the second insulating layer 124 and the carrier 100. In addition, in the embodiment, the electronic component package 10a may further include a conductive layer M2 disposed on the second insulating layer 124, and the conductive layer M2 may be electrically connected to the drain D. When the electronic component 110 is turned on, the electronic component 110 is electrically connected to other components through the conductive layer M2. In the present embodiment, the electronic component package 10a is actually constituted by a plurality of film layers stacked on the carrier board 100. First, the bottom barrier layer 104 and the organic buffer layer 106 are sequentially disposed on the carrier 100. At this time, the source S and the drain D of the organic thin film transistor 112 may be the same as the trace M1 as the first conductive layer, and may be simultaneously formed on the organic buffer layer 106. In other words, the source S, the drain D, and the trace M1 can be incorporated into the same process. Next, the organic semiconductor channel layer CH, the first insulating layer 122, the gate G, the second insulating layer 124, and the trace M2 may be sequentially formed. Before the gate G and the trace M2 are formed, the first insulating layer 122 and the second insulating layer 124 may be appropriately patterned to form an opening on the drain D. In this way, the trace M2 can be electrically connected to the drain D through the opening.

在其他實施例中,電子元件封裝體10a可更包括其他絕緣層,本發明不限制絕緣層的數目。舉例來說,電子元件封裝體10a可更包括第三絕緣層、第四絕緣層等等。另外,第一絕緣層122與第二絕緣層124可為有機絕緣材料,其例如為聚對二甲苯基(Parylene)、六甲基矽氧烷(HMDSO)或其他具有絕緣性質的有機材料。上述有機絕緣材料的水氣穿透率約可達到10 -2g/m 2‧Day。不過,在製程中,無論第一絕緣層122與第二絕緣層124是利用化學氣相層積、物理氣相層積或是經由濕膜加熱固化成膜,第一絕緣層122或第二絕緣層124中的缺陷無法避免地會聚集而產生針孔(pin-hloe)。以圖1來說明,第一絕緣層122的側表面S1與第二絕緣層124的側表面S2若外露出來,水氣便可能由第一絕緣層122的側表面S1與第二絕緣層124的側表面S2進入,進一步藉由第一絕緣層122或第二絕緣層124中的針孔快速擴散而接觸電子元件110,這可能造成電子元件110的損壞。 In other embodiments, the electronic component package 10a may further include other insulating layers, and the present invention does not limit the number of insulating layers. For example, the electronic component package 10a may further include a third insulating layer, a fourth insulating layer, and the like. In addition, the first insulating layer 122 and the second insulating layer 124 may be an organic insulating material such as parylene, hexamethyl decane (HMDSO) or other organic materials having insulating properties. The above-mentioned organic insulating material has a water vapor permeability of about 10 -2 g/m 2 ‧Day. However, in the process, whether the first insulating layer 122 and the second insulating layer 124 are formed by chemical vapor deposition, physical vapor deposition, or film formation by wet film heating, the first insulating layer 122 or the second insulation Defects in layer 124 inevitably coalesce to create pin-hloes. As shown in FIG. 1 , if the side surface S1 of the first insulating layer 122 and the side surface S2 of the second insulating layer 124 are exposed, the moisture may be from the side surface S1 of the first insulating layer 122 and the second insulating layer 124. The side surface S2 enters, further contacting the electronic component 110 by rapid diffusion of pinholes in the first insulating layer 122 or the second insulating layer 124, which may cause damage to the electronic component 110.

在本實施例中,有機緩衝層106的一側表面S3外露也可能導致水氣由側表面S3進入而損壞電子元件110。因此,阻隔層130的側壁接觸部132圍繞且覆蓋上述的側表面S1、側表面S2以及側表面S3,且阻隔層130的延伸部134由側壁接觸部132以遠離第一絕緣層122的方向延伸至外邊緣層OB,並接觸底阻隔層104。此時,側壁接觸部132與延伸部134為一L型結構並設置承載板100的外邊緣區OB。阻隔層130的材料可選用無機材料,例如氮化矽(SiNx)、氧化矽(SiOx)等。此外,阻隔層130可選擇由多層氮化矽/氧化矽(SiNx/SiOx)薄膜堆疊而成。上述材料的水氣穿透率為小於10 -4g/m 2‧Day。阻隔層130的水氣穿透率越小越可阻隔水氣從電子元件封裝體10a的外側進入阻隔層130中,因此可確保電子元件110不受水氣的影響。不過,本發明中阻隔層130的材料不以此為限,材料可依據所要求的水氣穿透率來調整。 In the present embodiment, the exposure of one side surface S3 of the organic buffer layer 106 may also cause moisture to enter from the side surface S3 to damage the electronic component 110. Therefore, the sidewall contact portion 132 of the barrier layer 130 surrounds and covers the above-described side surface S1, the side surface S2, and the side surface S3, and the extension portion 134 of the barrier layer 130 is extended by the sidewall contact portion 132 in a direction away from the first insulating layer 122. To the outer edge layer OB, and contact the bottom barrier layer 104. At this time, the side wall contact portion 132 and the extension portion 134 have an L-shaped structure and the outer edge region OB of the carrier plate 100 is disposed. The material of the barrier layer 130 may be selected from inorganic materials such as tantalum nitride (SiNx), yttrium oxide (SiOx), and the like. In addition, the barrier layer 130 may alternatively be formed by stacking a plurality of layers of tantalum nitride/yttria (SiNx/SiOx) films. The water vapor permeability of the above materials is less than 10 -4 g/m 2 ‧Day. The smaller the water vapor permeability of the barrier layer 130, the more the moisture can be prevented from entering the barrier layer 130 from the outside of the electronic component package 10a, thereby ensuring that the electronic component 110 is not affected by moisture. However, the material of the barrier layer 130 in the present invention is not limited thereto, and the material can be adjusted according to the required water vapor permeability.

此外,在本實施例中,阻隔層130的側壁接觸部132覆蓋有機緩衝層106的側表面S3以及第一絕緣層122的側表面S1,側壁接觸部132接觸於側表面S1、側表面S2以及側表面S3處形成一介面140。此介面140有助於阻隔水氣從側壁接觸部132擴散至內側的第一絕緣層122、第二絕緣層124以及有機緩衝層106中而接觸電子元件110,因此可確保電子元件110的品質。詳細來說,介面140可以使得第一絕緣層122、第二絕緣層124以及有機緩衝層106中的針孔(pin-hloe)不與側壁接觸部132中的針孔連續。如此一來,水氣無法藉由針孔從電子元件封裝體10a的外側快速擴散進入內側而影響電子元件110,因此可以確保電子元件110不受水氣的影響。In addition, in the present embodiment, the sidewall contact portion 132 of the barrier layer 130 covers the side surface S3 of the organic buffer layer 106 and the side surface S1 of the first insulating layer 122, and the sidewall contact portion 132 contacts the side surface S1, the side surface S2, and An interface 140 is formed at the side surface S3. The interface 140 helps to block the diffusion of moisture from the sidewall contact portion 132 to the inner first insulating layer 122, the second insulating layer 124, and the organic buffer layer 106 to contact the electronic component 110, thereby ensuring the quality of the electronic component 110. In detail, the interface 140 may make the pin-hloes in the first insulating layer 122, the second insulating layer 124, and the organic buffer layer 106 not continuous with the pinholes in the sidewall contact portion 132. As a result, the moisture cannot be quickly diffused from the outside of the electronic component package 10a into the inner side by the pinhole to affect the electronic component 110, so that the electronic component 110 can be protected from moisture.

在本實施例中,阻隔層130更包括一覆蓋部136,覆蓋部136由側壁接觸部132以遠離延伸部134的方向延伸而覆蓋於第一絕緣層122上方,且覆蓋部136露出中心區AA。換言之,在本實施例中,中心區AA上並沒有設置阻隔層130的覆蓋部136,或是阻隔層130沒有延伸到中心區AA或是沒有完全覆蓋住中心區AA。一般來說,無機材料相較於有機材料有較易碎的特性。所以,阻隔層130相較地比第一絕緣層122與第二絕緣層124硬脆。以電子元件封裝體10a來說明,當電子元件封裝體10a進行落球測試時,若阻隔層130佈滿中心區AA,則相對容易碎裂,而影響其他元件,甚至造成電子元件封裝體10a無法正常運作。因此,本實施例的阻隔層130露出中心區AA,可降低阻隔層130碎裂的機率,因此可確保電子元件封裝體10a承受外力的能力。In this embodiment, the barrier layer 130 further includes a cover portion 136. The cover portion 136 extends from the sidewall contact portion 132 in a direction away from the extension portion 134 to cover the first insulation layer 122, and the cover portion 136 exposes the central region AA. . In other words, in the present embodiment, the cover portion 136 of the barrier layer 130 is not disposed on the central area AA, or the barrier layer 130 does not extend to the central area AA or does not completely cover the central area AA. In general, inorganic materials have more brittle characteristics than organic materials. Therefore, the barrier layer 130 is harder than the first insulating layer 122 and the second insulating layer 124. In the electronic component package 10a, when the electronic component package 10a performs the ball drop test, if the barrier layer 130 is filled with the central area AA, it is relatively easy to be broken, which affects other components, and even causes the electronic component package 10a to be abnormal. Operation. Therefore, the barrier layer 130 of the present embodiment is exposed to the central area AA, and the probability of the barrier layer 130 being broken can be reduced, so that the ability of the electronic component package 10a to withstand an external force can be ensured.

在本實施例中,電子元件封裝體10a可更包括一顯示介質層EPL以及一保護層PV。顯示介質層EPL包覆於保護層PV與承載板100之間。顯示介質層EPL配置於電子元件110上,其中顯示介質層EPL與電子元件110可藉由導電層M2電性相連接並用以顯示影像。顯示介質層EPL中的顯示介質可為液晶、介電溶劑(dielectric solvent)與多個摻雜於介電溶劑中的帶電荷粒子所組成的顯示介質或是其他合適的顯示介質,本發明並不限定顯示介質層的類型與材料。換言之,電子元件封裝體10a可以用於顯示畫面而作為顯示器,但在另一實施例中,電子元件110上可不設置有顯示介質層EPL而是設置有感應材料(例如可以將光能轉換為電能的光電轉換材料)_,而使得電子元件封裝體10a用以作為感測器。In this embodiment, the electronic component package 10a may further include a display medium layer EPL and a protective layer PV. The display medium layer EPL is coated between the protective layer PV and the carrier plate 100. The display medium layer EPL is disposed on the electronic component 110, wherein the display medium layer EPL and the electronic component 110 are electrically connected by the conductive layer M2 and used to display an image. The display medium in the display medium layer EPL may be a display medium composed of a liquid crystal, a dielectric solvent and a plurality of charged particles doped in a dielectric solvent, or other suitable display medium, and the present invention does not Define the type and material of the display media layer. In other words, the electronic component package 10a can be used to display a screen as a display, but in another embodiment, the electronic component 110 may not be provided with a display medium layer EPL but may be provided with an inductive material (for example, converting light energy into electrical energy) The photoelectric conversion material) is used to make the electronic component package 10a function as a sensor.

圖2為本發明第二實施例的電子元件封裝體的剖面示意圖。請參照圖2,電子元件封裝體10b包括圖1中的承載板100、底阻隔層104、有機緩衝層106、電子元件110、第一絕緣層122、第二絕緣層124、阻隔層130、顯示介質層EPL、一保護層PV、導電層M2以及走線M1。電子元件封裝體10b類似於圖1的實施例,上述組成構件的特性以及組成構件彼此的連接關係可以參照電子元件封裝體10a的相關描述,此處不再贅述。在本實施例中,電子元件封裝體10b與電子元件封裝體10a不同的是,第二絕緣層124的面積超出第一絕緣層122的側表面S1而具有一側壁部分126。側壁部分126位於第一絕緣層122的側表面S1與側壁接觸部132之間,且第二絕緣層124可將第一絕緣層122包覆在內。此外,側壁接觸部132圍繞側表面S1、側壁部分126遠離側表面S1的側表面S2以及有機緩衝層106的側表面S3,且覆蓋上述的側表面S2以及側表面S3。2 is a cross-sectional view showing an electronic component package in accordance with a second embodiment of the present invention. Referring to FIG. 2, the electronic component package 10b includes the carrier board 100, the bottom barrier layer 104, the organic buffer layer 106, the electronic component 110, the first insulating layer 122, the second insulating layer 124, the barrier layer 130, and the display of FIG. The dielectric layer EPL, a protective layer PV, a conductive layer M2, and a trace M1. The electronic component package 10b is similar to the embodiment of FIG. 1. The characteristics of the above-mentioned component members and the connection relationship between the component members can be referred to the related description of the electronic component package 10a, and details are not described herein again. In the present embodiment, the electronic component package 10b is different from the electronic component package 10a in that the second insulating layer 124 has a side wall portion 126 beyond the side surface S1 of the first insulating layer 122. The sidewall portion 126 is located between the side surface S1 of the first insulating layer 122 and the sidewall contact portion 132, and the second insulating layer 124 may cover the first insulating layer 122. Further, the side wall contact portion 132 surrounds the side surface S1, the side wall portion 126 away from the side surface S2 of the side surface S1, and the side surface S3 of the organic buffer layer 106, and covers the above-described side surface S2 and side surface S3.

在本實施例中,側壁部分126可增加電子元件封裝體10b由內側朝向外側堆疊的膜層數量,且相互堆疊的兩膜層間會形成一介面。具體來說,電子元件封裝體10b的側壁由內側至外側堆疊的膜層依序為第一絕緣層122、第二絕緣層124的側壁部分126以及側壁接觸部132。側壁部分126的側表面S2以及有機緩衝層106的側表面S3與側壁接觸部132會形成一介面142。另外,側壁部分126與第一絕緣層122的側表面S1會形成另一介面144。如此一來,類似於圖1中的介面140,上述的兩個介面142與144有助於阻隔水氣從電子元件封裝體10b的外側快速擴散進入內側而避免電子元件110受到水氣影響,因此可確保電子元件110的品質。In the present embodiment, the sidewall portion 126 can increase the number of layers of the electronic component package 10b stacked from the inside toward the outside, and an interface is formed between the two layers stacked on each other. Specifically, the film layers stacked on the sidewalls of the electronic component package 10b from the inside to the outside are sequentially the first insulating layer 122, the sidewall portion 126 of the second insulating layer 124, and the sidewall contact portion 132. The side surface S2 of the side wall portion 126 and the side surface S3 of the organic buffer layer 106 and the side wall contact portion 132 form an interface 142. In addition, the side wall portion 126 and the side surface S1 of the first insulating layer 122 form another interface 144. In this way, similar to the interface 140 in FIG. 1 , the above two interfaces 142 and 144 help to block the rapid diffusion of moisture from the outside of the electronic component package 10 b into the inner side to prevent the electronic component 110 from being affected by moisture. The quality of the electronic component 110 can be ensured.

值得注意的是,本發明並不限定絕緣層堆疊的數量,其數量可依需要進行調整。在另一實施例中,電子元件封裝體10b的有機緩衝層106的面積可以小於第二絕緣層124,使側壁部分126包覆有機緩衝層106的側表面S3。另外,電子元件封裝體10b可更包括一第三絕緣層(未繪示),第三絕緣層的面積超出第二絕緣層124的側表面S2而具有另一側壁部份。在電子元件封裝體10b的側壁由內側至外側堆疊的膜層依序為第一絕緣層122、第二絕緣層124、第三絕緣層與側壁接觸部132,且形成總共三個不同的介面。如此一來,三個不同的介面可有效的阻隔水氣從電子元件封裝體10b的外側擴散至內側,因此可確保電子元件110的品質。It should be noted that the present invention does not limit the number of insulation layer stacks, and the number thereof can be adjusted as needed. In another embodiment, the area of the organic buffer layer 106 of the electronic component package 10b may be smaller than the second insulating layer 124 such that the sidewall portion 126 covers the side surface S3 of the organic buffer layer 106. In addition, the electronic component package 10b may further include a third insulating layer (not shown) having a larger area than the side surface S2 of the second insulating layer 124 and another sidewall portion. The film layers stacked from the inside to the outside on the side walls of the electronic component package 10b are sequentially the first insulating layer 122, the second insulating layer 124, the third insulating layer and the sidewall contact portion 132, and a total of three different interfaces are formed. In this way, the three different interfaces can effectively block the moisture from diffusing from the outside to the inside of the electronic component package 10b, thereby ensuring the quality of the electronic component 110.

圖3為本發明第三實施例的電子元件封裝體的剖面示意圖。圖4為圖3實施例的電子元件封裝體10c的上視示意圖。首先請參照圖3,電子元件封裝體10c包括圖2中的承載板100、底阻隔層104、有機緩衝層106、電子元件110、第一絕緣層122、第二絕緣層124、阻隔層130、顯示介質層EPL、一保護層PV、導電層M2以及走線M1。在電子元件封裝體10c中,類似於圖2,上述組成構件的特性以及組成構件彼此的連接關係可以參照電子元件封裝體10a以及電子元件封裝體10b的相關描述,此處不再贅述。3 is a cross-sectional view showing an electronic component package in accordance with a third embodiment of the present invention. Fig. 4 is a top plan view showing the electronic component package 10c of the embodiment of Fig. 3. Referring first to FIG. 3, the electronic component package 10c includes the carrier board 100, the bottom barrier layer 104, the organic buffer layer 106, the electronic component 110, the first insulating layer 122, the second insulating layer 124, and the barrier layer 130 in FIG. A dielectric layer EPL, a protective layer PV, a conductive layer M2, and a trace M1 are displayed. In the electronic component package 10c, similar to FIG. 2, the characteristics of the above-described constituent members and the connection relationship between the constituent members can be referred to the related descriptions of the electronic component package 10a and the electronic component package 10b, and details are not described herein again.

在本實施例中,電子元件封裝體10c與電子元件封裝體10b不同的是,電子元件封裝體10c更包括一或多個側壁阻擋結構150a,設置在內邊緣區IB中,且貫穿第一絕緣層122與第二絕緣層124並構成檔牆狀。側壁阻擋結構150a配置於有機緩衝層106上且被阻隔層130的覆蓋部136覆蓋。具體來說,側壁阻擋結構150a可包括多條走線M1、多個子阻擋結構152a以及多個子阻擋結構152b,其中一個子阻擋結構152a以及其中一個子阻擋結構152b依序在垂直承載板100的方向上堆疊在其中一條走線M1上而構成其中一個側壁阻擋結構150a。也就是說,走線M1實質上也可以作為構成側壁阻擋結構150a的其中一個子阻擋結構。In this embodiment, the electronic component package 10c is different from the electronic component package 10b. The electronic component package 10c further includes one or more sidewall blocking structures 150a disposed in the inner edge region IB and extending through the first insulation. The layer 122 and the second insulating layer 124 form a wall shape. The sidewall blocking structure 150a is disposed on the organic buffer layer 106 and covered by the covering portion 136 of the barrier layer 130. Specifically, the sidewall blocking structure 150a may include a plurality of traces M1, a plurality of sub-barrier structures 152a, and a plurality of sub-barrier structures 152b, wherein one of the sub-blocking structures 152a and one of the sub-barrier structures 152b are sequentially oriented in the vertical carrier board 100. One of the side wall blocking structures 150a is formed by being stacked on one of the traces M1. That is to say, the trace M1 can also substantially serve as one of the sub-block structures constituting the sidewall blocking structure 150a.

在本實施例中,多個側壁阻擋結構150a的至少其中一者的走線M1可以電性連接電子元件110。換言之,側壁阻擋結構150a可以用以傳遞電子元件110的訊號。另一實施例中,多個側壁阻擋結構150a的走線M1可全部都不電性連接電子元件110。如此,側壁阻擋結構150a可以為電性浮置的狀態,也可以是作為靜電防護用的結構。In this embodiment, the trace M1 of at least one of the plurality of sidewall blocking structures 150a can be electrically connected to the electronic component 110. In other words, the sidewall blocking structure 150a can be used to transmit signals of the electronic component 110. In another embodiment, the traces M1 of the plurality of sidewall blocking structures 150a may not electrically connect the electronic components 110. As such, the sidewall blocking structure 150a may be in an electrically floating state or may be a structure for electrostatic protection.

接下來請同時參照圖3以及圖4,由圖3及圖4可知多層堆疊的側壁阻擋結構150a實質上為一薄片狀,且在電子元件封裝體10c的周邊圍繞電子元件110。換言之,側壁阻擋結構150a可使電子元件封裝體10c具有多個垂直於承載板100平面的檔牆狀結構,此結構可阻隔水氣從電子元件封裝體10c的外側擴散至中心區AA而影響電子元件110的運作。更詳細來說,多個擋牆狀的側壁阻擋結構150a可使電子元件封裝體10c從內側到外側具有多個垂直於承載板100平面的介面。如此一來,類似於圖1中的介面140,上述多個介面會防止水氣從外側藉由膜層中的針孔擴散進入內側。此外,雖然圖3中繪示有3個側壁阻擋結構150a,但側壁阻擋結構150a的數量不以此為限。舉例來說,電子元件封裝體10c可包括1個、2個、4個等等的側壁阻擋結構150a。進一步來說,在部分實施例中,由於側壁阻擋結構150a具備阻隔水氣的作用,設置有側壁阻擋結構150a的電子元件封裝體可選擇性的不需設置阻隔層130,或是阻隔層130可選擇性地不具有側壁接觸部132與延伸部134。Referring to FIG. 3 and FIG. 4 simultaneously, it can be seen from FIG. 3 and FIG. 4 that the sidewall stack structure 150a of the multilayer stack is substantially in the shape of a sheet and surrounds the electronic component 110 at the periphery of the electronic component package 10c. In other words, the sidewall blocking structure 150a can cause the electronic component package 10c to have a plurality of wall-like structures perpendicular to the plane of the carrier board 100, which can block the diffusion of moisture from the outside of the electronic component package 10c to the central area AA and affect the electrons. The operation of component 110. In more detail, the plurality of barrier-like sidewall blocking structures 150a may have the electronic component package 10c having a plurality of interfaces perpendicular to the plane of the carrier 100 from the inside to the outside. As such, similar to the interface 140 of FIG. 1, the plurality of interfaces prevent moisture from diffusing from the outside into the inside through the pinholes in the film. In addition, although three sidewall blocking structures 150a are illustrated in FIG. 3, the number of sidewall blocking structures 150a is not limited thereto. For example, the electronic component package 10c may include 1, 2, 4, etc. sidewall blocking structures 150a. Further, in some embodiments, since the sidewall blocking structure 150a is provided to block moisture, the electronic component package provided with the sidewall blocking structure 150a may optionally not be provided with the barrier layer 130, or the barrier layer 130 may be Optionally there are no sidewall contacts 132 and extensions 134.

圖5為本發明第四實施例的電子元件封裝體的剖面示意圖。請參照圖5,類似於圖4,在本實施例中電子元件封裝體10d包括電子元件封裝體10c的承載板100、底阻隔層104、有機緩衝層106、電子元件110、第一絕緣層122、第二絕緣層124、阻隔層130、顯示介質層EPL、一保護層PV、導電層M2以及走線M1。在電子元件封裝體10d中,類似於圖3,上述組成構件的特性以及組成構件彼此的連接關係可以參照電子元件封裝體10c的相關描述,此處不再贅述。Fig. 5 is a cross-sectional view showing an electronic component package in accordance with a fourth embodiment of the present invention. Referring to FIG. 5 , similar to FIG. 4 , in the embodiment, the electronic component package 10 d includes the carrier 100 of the electronic component package 10 c , the bottom barrier layer 104 , the organic buffer layer 106 , the electronic component 110 , and the first insulating layer 122 . a second insulating layer 124, a barrier layer 130, a display dielectric layer EPL, a protective layer PV, a conductive layer M2, and a trace M1. In the electronic component package 10d, similar to FIG. 3, the characteristics of the above-described constituent members and the connection relationship between the constituent members can be referred to the related description of the electronic component package 10c, and details are not described herein again.

在本實施例中,類似於圖3,電子元件封裝體10d更包括一側壁阻擋結構150b,設置於內邊緣區IB中,且貫穿第一絕緣層122與第二絕緣層124並構成檔牆狀。側壁阻擋結構150配置於有機緩衝層106上且被阻隔層130的覆蓋部136覆蓋。在圖5的實施例中,側壁阻擋結構150b包括子阻擋結構152a、子阻擋結構152b以及子阻擋結構152c,其中子阻擋結構152a以及子阻擋結構152b依序在垂直承載板100的方向上堆疊在子阻擋結構152c上。子阻擋結構152a可與走線M1由相同膜層構成。In this embodiment, similar to FIG. 3, the electronic component package 10d further includes a sidewall blocking structure 150b disposed in the inner edge region IB and extending through the first insulating layer 122 and the second insulating layer 124 to form a wall shape. . The sidewall blocking structure 150 is disposed on the organic buffer layer 106 and covered by the covering portion 136 of the barrier layer 130. In the embodiment of FIG. 5, the sidewall blocking structure 150b includes a sub-barrier structure 152a, a sub-barrier structure 152b, and a sub-barrier structure 152c, wherein the sub-barrier structure 152a and the sub-blocking structure 152b are sequentially stacked in the direction of the vertical carrier plate 100. Sub-blocking structure 152c. The sub-barrier structure 152a may be composed of the same film layer as the trace M1.

但與圖3的實施例不同的是,在本實施例中,多層結構的側壁阻擋結構150b與單層結構的走線M1獨立設置,使得多層結構的側壁阻擋結構150b位於單層的走線M1外側。不過,類似於圖3的側壁阻擋結構150a,側壁阻擋結構150b可使電子元件封裝體10d從外側到內側具有多個垂直於承載板100平面的介面,因此側壁阻擋結構150b可阻隔水氣從電子元件封裝體10d的擴散,進而影響電子元件110的運作。另外,在本實施例中,側壁阻擋結構150b也類似側壁阻擋結構150a可選擇電性連接至電子元件110或電性浮置或作為靜電保護的構件。除此之外,雖然在本實施例中,側壁阻擋結構150b設置於走線M1的外側,但本發明不以此為限。舉例來說,側壁阻擋結構150b也可設置在相較走線M1更接近電子元件110的一側。進一步來說,在部分實施例中,由於側壁阻擋結構150b具備阻隔水氣的作用,設置有側壁阻擋結構150b的電子元件封裝體可選擇性的不需設置阻隔層130,或是阻隔層130可選擇性地不具有側壁接觸部132與延伸部134。However, unlike the embodiment of FIG. 3, in the present embodiment, the sidewall blocking structure 150b of the multilayer structure is disposed independently of the trace M1 of the single-layer structure, such that the sidewall blocking structure 150b of the multilayer structure is located on the single-layer trace M1. Outside. However, similar to the sidewall blocking structure 150a of FIG. 3, the sidewall blocking structure 150b allows the electronic component package 10d to have a plurality of interfaces perpendicular to the plane of the carrier board 100 from the outside to the inside, so that the sidewall blocking structure 150b can block moisture from the electrons. The diffusion of the component package 10d, in turn, affects the operation of the electronic component 110. In addition, in the present embodiment, the sidewall blocking structure 150b is also similar to the sidewall blocking structure 150a, which may be electrically connected to the electronic component 110 or electrically floating or as a member of electrostatic protection. In addition, although the sidewall blocking structure 150b is disposed on the outer side of the trace M1 in this embodiment, the invention is not limited thereto. For example, the sidewall blocking structure 150b may also be disposed on a side closer to the electronic component 110 than the trace M1. Further, in some embodiments, since the sidewall blocking structure 150b has the function of blocking moisture, the electronic component package provided with the sidewall blocking structure 150b may optionally not need to be provided with the barrier layer 130, or the barrier layer 130 may be Optionally there are no sidewall contacts 132 and extensions 134.

在圖3以及圖5的實施例中,電子元件封裝體10c以及電子元件封裝體10d實質上是由堆疊於承載板100上的多個膜層所構成。首先,源極S、汲極D、走線M1以及子阻擋結構152c可為同一第一導電層,可同時形成在有機緩衝層106上。接下來,依序形成有機半導體通道層CH以及第一絕緣層122。此時,閘極G以及子阻擋結構152a可為同一第二導電層,可同時形成第一絕緣層122上且子阻擋結構152a貫穿第一絕緣層122而接觸走線M1/子阻擋結構152c。接著,在第一絕緣層122上形成第二絕緣層124。導電層M2與子阻擋結構152b可為同一第三導電層,可同時形成於第二絕緣層124上且子阻擋結構152b貫穿第二絕緣層124而接觸子阻擋結構152a。換言之,在圖3以及圖5的實施例中,側壁阻擋結構150a以及側壁阻擋結構150b的製作可整合至原有的製程當中,因此並不會增加額外的製程造成成本的提高。In the embodiment of FIGS. 3 and 5, the electronic component package 10c and the electronic component package 10d are substantially constituted by a plurality of film layers stacked on the carrier 100. First, the source S, the drain D, the trace M1, and the sub-block structure 152c may be the same first conductive layer, and may be simultaneously formed on the organic buffer layer 106. Next, the organic semiconductor channel layer CH and the first insulating layer 122 are sequentially formed. At this time, the gate G and the sub-barrier structure 152a may be the same second conductive layer, and the first insulating layer 122 may be simultaneously formed and the sub-barrier structure 152a penetrates the first insulating layer 122 to contact the trace M1/sub-barrier structure 152c. Next, a second insulating layer 124 is formed on the first insulating layer 122. The conductive layer M2 and the sub-barrier structure 152b may be the same third conductive layer, which may be simultaneously formed on the second insulating layer 124 and the sub-blocking structure 152b penetrates the second insulating layer 124 to contact the sub-blocking structure 152a. In other words, in the embodiment of FIGS. 3 and 5, the fabrication of the sidewall blocking structure 150a and the sidewall blocking structure 150b can be integrated into the original process, so that no additional process is added to increase the cost.

在本實施例中,第一導電層、第二導電層、第三導電層的材料可以是金屬、金屬合金、導電氧化物、有機導電材料或是上述材料的組合,且第一導電層、第二導電層與第三導電層各自可以是多層導電材料層構成的疊層。一般來說,金屬材料的水氣穿透率會低於有機材料。若側壁阻擋結構150a與側壁阻擋結構150b的材質包括金屬,可進一步阻擋水氣從外側進入,提升防止水氣破壞電子元件110的封裝效果。不過,上述材質僅是舉例說明之用,並非用以限定本發明。In this embodiment, the material of the first conductive layer, the second conductive layer, and the third conductive layer may be a metal, a metal alloy, a conductive oxide, an organic conductive material, or a combination thereof, and the first conductive layer, Each of the two conductive layers and the third conductive layer may be a laminate of a plurality of layers of conductive material. In general, metal materials have a lower water vapor transmission rate than organic materials. If the material of the sidewall blocking structure 150a and the sidewall blocking structure 150b includes metal, the moisture can be further prevented from entering from the outside, and the sealing effect of preventing the moisture from damaging the electronic component 110 is enhanced. However, the above materials are for illustrative purposes only and are not intended to limit the invention.

圖6為本發明第五實施例電子元件封裝體的局部構件放大圖,其中圖6僅繪示了電子元件封裝體的承載板、底阻隔層、第一絕緣層、顯示介質層、保護層以及阻隔層。請參照圖6,電子元件封裝體10e包括承載板100、底阻隔層104、絕緣層IN、顯示介質層EPL、阻隔層130a、封裝板CG以及框膠SE,其中阻隔層130a包括側壁接觸部132a以及延伸部134a。電子元件封裝體10e中各個構件的特性及配置關係可以參照上述實施例的任一者,此處不再贅述。絕緣層IN可以包括前述實施例中記載的第一絕緣層122、第二絕緣層124或其組合。另外,圖6中雖未繪示電子元件,但可以參照前述實施例而理解,電子元件、絕緣層IN與阻隔層130a之間的配置關係。6 is an enlarged view of a partial component of an electronic component package according to a fifth embodiment of the present invention, wherein FIG. 6 only shows a carrier board, a bottom barrier layer, a first insulating layer, a display dielectric layer, a protective layer, and the electronic component package; Barrier layer. Referring to FIG. 6, the electronic component package 10e includes a carrier board 100, a bottom barrier layer 104, an insulating layer IN, a display dielectric layer EPL, a barrier layer 130a, a package board CG, and a sealant SE, wherein the barrier layer 130a includes a sidewall contact portion 132a. And an extension 134a. For the characteristics and arrangement relationship of the respective components in the electronic component package 10e, reference may be made to any of the above embodiments, and details are not described herein again. The insulating layer IN may include the first insulating layer 122, the second insulating layer 124, or a combination thereof as described in the foregoing embodiments. Although the electronic component is not shown in FIG. 6, the arrangement relationship between the electronic component, the insulating layer IN, and the barrier layer 130a can be understood by referring to the foregoing embodiment.

在本實施例中,阻隔層130a與前述阻隔層130的不同處在於,阻隔層130a並無覆蓋絕緣層IN,且延伸部134a由多個凸塊PT構成而在阻隔層130a遠離承載板100的一側構成一凹凸表面138a,其中凸塊PT彼此分隔設置且凹凸表面138a為鋸齒狀。具體來說,在阻隔層130a形成後,可進一步對阻隔層130a的延伸部134a進行圖案化,使延伸部134a圖案化出凸塊PT而形成鋸齒狀的凹凸表面138a。接下來,會將顯示介質層EPL封裝於承載板100與封裝板CG之間。在一實施例中,可利用框膠SE圍繞顯示介質層EPL而將承載板100與封裝板CG組立在一起。由凹凸表面138a與框膠SE彼此形成的介面可有效的阻隔水氣從框膠SE的外側擴散至絕緣層IN中的第一絕緣層122中並接觸電子元件110(未繪示,可參照圖1~3與圖5),進而能維持電子元件110(未繪示,可參照圖1~3與圖5)的正常運作。In the present embodiment, the barrier layer 130a is different from the barrier layer 130 in that the barrier layer 130a does not cover the insulating layer IN, and the extension portion 134a is composed of a plurality of bumps PT and is away from the carrier plate 100 at the barrier layer 130a. One side constitutes a concave-convex surface 138a in which the projections PT are spaced apart from each other and the uneven surface 138a is serrated. Specifically, after the barrier layer 130a is formed, the extending portion 134a of the barrier layer 130a may be further patterned, and the extending portion 134a may be patterned into the bump PT to form a zigzag uneven surface 138a. Next, the display medium layer EPL is packaged between the carrier board 100 and the package board CG. In an embodiment, the carrier sheet 100 and the package board CG may be assembled by using the sealant SE around the display medium layer EPL. The interface formed by the concave-convex surface 138a and the sealant SE can effectively block the moisture from diffusing from the outside of the sealant SE into the first insulating layer 122 in the insulating layer IN and contacting the electronic component 110 (not shown, refer to the figure 1~3 and FIG. 5), in addition, can maintain the normal operation of the electronic component 110 (not shown, can refer to FIGS. 1-3 and FIG. 5).

圖7為本發明第六實施例電子元件封裝體的局部構件放大圖,其中圖7僅繪示了電子元件封裝體的承載板、底阻隔層、第一絕緣層、顯示介質層、保護層以及阻隔層。請參照圖7,電子元件封裝體10f包括承載板100、底阻隔層104、絕緣層IN、顯示介質層EPL、阻隔層130b、封裝板CG以及框膠SE,其中阻隔層130b包括側壁接觸部132b以及延伸部134b。電子元件封裝體10f中各個構件的特性及配置關係可以參照圖6實施例的相關敘述,此處不再贅述。在本實施例中,類似於圖6的電子元件封裝體10e,阻隔層130b的延伸部134b在阻隔層130b遠離承載板100的一上側形成一凹凸表面138b。本實施例中的延伸部134b連續地向外延伸,且所形成的凹凸表面138b為微杯狀。亦即,凹凸表面138b是由延伸部134b中設置有多個較厚的區段與多個較薄的區段且較厚區段與較薄區段交替分布而構成的。此外,顯示介質層EPL封裝於承載板100與封裝板CG之間。在一實施例中,可利用框膠SE圍繞顯示介質層EPL而將承載板100與封裝板CG組立在一起。由凹凸表面138b與框膠SE彼此形成的介面可有效的阻隔水氣從框膠SE的外側擴散至絕緣層IN中的第一絕緣層122中並接觸電子元件110(未繪示,可參照圖1~3與圖5),進而能維持電子元件110(未繪示,可參照圖1~3與圖5)的正常運作。7 is an enlarged view of a partial member of an electronic component package according to a sixth embodiment of the present invention, wherein FIG. 7 only shows a carrier board, a bottom barrier layer, a first insulating layer, a display dielectric layer, a protective layer, and the electronic component package; Barrier layer. Referring to FIG. 7, the electronic component package 10f includes a carrier board 100, a bottom barrier layer 104, an insulating layer IN, a display dielectric layer EPL, a barrier layer 130b, a package board CG, and a sealant SE. The barrier layer 130b includes a sidewall contact portion 132b. And an extension 134b. For the characteristics and arrangement relationship of the respective components in the electronic component package 10f, reference may be made to the related description of the embodiment of FIG. 6, and details are not described herein again. In the present embodiment, similar to the electronic component package 10e of FIG. 6, the extending portion 134b of the barrier layer 130b forms a concave-convex surface 138b on an upper side of the barrier layer 130b away from the carrier sheet 100. The extending portion 134b in this embodiment continuously extends outward, and the formed uneven surface 138b is in the shape of a microcup. That is, the uneven surface 138b is constituted by a plurality of thicker sections and a plurality of thinner sections and the thicker sections and the thinner sections are alternately distributed in the extending portion 134b. In addition, the display medium layer EPL is packaged between the carrier board 100 and the package board CG. In an embodiment, the carrier sheet 100 and the package board CG may be assembled by using the sealant SE around the display medium layer EPL. The interface formed by the concave-convex surface 138b and the sealant SE can effectively block the moisture from diffusing from the outside of the sealant SE into the first insulating layer 122 in the insulating layer IN and contacting the electronic component 110 (not shown, refer to the figure 1~3 and FIG. 5), in addition, can maintain the normal operation of the electronic component 110 (not shown, can refer to FIGS. 1-3 and FIG. 5).

圖8為本發明第七實施例電子元件封裝體的局部構件放大圖,其中圖8僅繪示了電子元件封裝體的承載板、底阻隔層、第一絕緣層、顯示介質層、保護層以及阻隔層。請參照圖8,電子元件封裝體10g包括承載板100、底阻隔層104、絕緣層IN、顯示介質層EPL、阻隔層130c、封裝板CG以及框膠SE,其中阻隔層130c包括側壁接觸部132以及延伸部134c。顯示介質層EPL封裝於承載板100與封裝板CG之間。框膠SE圍繞顯示介質層EPL而將承載板100與封裝板CG組立在一起。電子元件封裝體10g中各個構件的特性及配置關係可以參照上述實施例,此處不再贅述。在本實施例中,類似於圖6的電子元件封裝體10e,阻隔層130的延伸部134c在遠離承載板100的一上側具有一凹凸表面138c。凹凸表面138c具體的形成方式可參照圖6實施例的相關敘述,此處不再贅述。與電子元件封裝體10e的凹凸表面138a不同的是,凹凸表面138c為階梯狀。凹凸表面138c也可阻隔水氣從框膠SE的外側擴散至絕緣層IN中的第一絕緣層122中並接觸電子元件110,進而能維持電子元件110的正常運作。8 is an enlarged view of a partial member of an electronic component package according to a seventh embodiment of the present invention, wherein FIG. 8 only shows a carrier board, a bottom barrier layer, a first insulating layer, a display dielectric layer, a protective layer, and the electronic component package; Barrier layer. 8, the electronic component package 10g includes a carrier 100, a bottom barrier layer 104, an insulating layer IN, a display dielectric layer EPL, a barrier layer 130c, a package board CG, and a sealant SE. The barrier layer 130c includes a sidewall contact portion 132. And an extension 134c. The display medium layer EPL is packaged between the carrier board 100 and the package board CG. The sealant SE surrounds the carrier sheet 100 and the package board CG around the display medium layer EPL. For the characteristics and arrangement relationship of the respective components in the electronic component package 10g, reference may be made to the above embodiments, and details are not described herein again. In the present embodiment, similar to the electronic component package 10e of FIG. 6, the extending portion 134c of the barrier layer 130 has a concave-convex surface 138c on an upper side away from the carrier sheet 100. For the specific formation of the uneven surface 138c, reference may be made to the related description of the embodiment of FIG. 6, and details are not described herein again. Unlike the uneven surface 138a of the electronic component package 10e, the uneven surface 138c has a stepped shape. The uneven surface 138c can also prevent moisture from diffusing from the outside of the sealant SE into the first insulating layer 122 in the insulating layer IN and contacting the electronic component 110, thereby maintaining the normal operation of the electronic component 110.

值得注意的是,圖6、圖7以及圖8中延伸部134a~134c的凹凸表面138a、凹凸表面138b以及凹凸表面138c皆可應用於圖1、圖2、圖3以及圖5的電子元件封裝體中,以更降低電子元件封裝體中電子元件受水氣破壞的機率。此外,本發明並不限定凹凸表面具體的凹凸形狀,上述凹凸表面138a、凹凸表面138b以及凹凸表面138c的形狀僅為示範例但不受此限制。舉例來說,凹凸表面的形狀除為鋸齒狀、微杯狀或階梯狀外,也可具有愛心狀、三角狀或同時結合上述任一種以上的形狀。It is to be noted that the uneven surface 138a, the uneven surface 138b, and the uneven surface 138c of the extending portions 134a to 134c in FIGS. 6, 7, and 8 can be applied to the electronic component packages of FIGS. 1, 2, 3, and 5. In the body, the probability of the electronic components in the electronic component package being damaged by moisture is further reduced. Further, the present invention does not limit the specific uneven shape of the uneven surface, and the shapes of the uneven surface 138a, the uneven surface 138b, and the uneven surface 138c are merely exemplary but not limited thereto. For example, the shape of the concave-convex surface may be in a shape of a love, a triangle, or a combination of any one or more of the above, in addition to a zigzag shape, a micro cup shape, or a step shape.

圖9為本發明第八實施例電子元件封裝體的局部構件放大圖。請參照圖9,電子元件封裝體10h包括承載板100、底阻隔層104、絕緣層IN、顯示介質層EPL以及阻隔層130d。電子元件封裝體10g中承載板100、底阻隔層104、絕緣層IN以及顯示介質層EPL的特性及配置關係可以參照上述實施例,此處不再贅述。另外,阻隔層130d可採用前述實施例中阻隔層130來實施。另外,電子元件封裝體10h可以包括有前述實施例記載的電子元件110以及/或側壁阻擋結構150a 或150b,但不以此為限。具體而言,在本實施例中,顯示介質層EPL封裝於承載板100與封裝板CG之間,且框膠SE圍繞顯示介質層EPL而用來將承載板100與封裝板CG組立在一起。本實施例的封裝板CG與框膠SE的設置方式可以用來取代前述實施例任一者中的保護層PV。換言之,本發明實施例並不限定以薄膜狀的保護層PV來封裝顯示介質層EPL,而可以採用封裝板CG搭配框膠SE的方式來封裝顯示介質層EPL。Fig. 9 is an enlarged view of a partial member of an electronic component package in accordance with an eighth embodiment of the present invention. Referring to FIG. 9, the electronic component package 10h includes a carrier board 100, a bottom barrier layer 104, an insulating layer IN, a display dielectric layer EPL, and a barrier layer 130d. For the characteristics and arrangement relationship of the carrier board 100, the bottom barrier layer 104, the insulating layer IN, and the display medium layer EPL in the electronic component package 10g, reference may be made to the above embodiments, and details are not described herein again. In addition, the barrier layer 130d can be implemented by the barrier layer 130 in the foregoing embodiment. In addition, the electronic component package 10h may include the electronic component 110 and/or the sidewall blocking structure 150a or 150b described in the foregoing embodiments, but is not limited thereto. Specifically, in the embodiment, the display medium layer EPL is encapsulated between the carrier board 100 and the package board CG, and the sealant SE surrounds the display medium layer EPL for assembling the carrier board 100 and the package board CG. The manner in which the package board CG and the sealant SE of the present embodiment are disposed may be used in place of the protective layer PV in any of the foregoing embodiments. In other words, the embodiment of the present invention does not limit the packaging of the display medium layer EPL by the film-shaped protective layer PV, and the display medium layer EPL may be packaged by using the package board CG with the sealant SE.

綜上所述,本發明的電子元件封裝體中,阻隔層以及側壁阻擋結構的設置可增加電子元件封裝體中垂直於承載板平面的介面數量,其中上述的介面位於電子元件封裝體的周圍並圍繞電子元件。如此一來,可有效的阻隔水氣從外側擴散進入內側,降低電子元件封裝體中電子元件受到從側面來的水氣而破壞的機率。此外,側壁阻擋結構可以整合至原有的製程當中,並不會增加額外的成本。In summary, in the electronic component package of the present invention, the arrangement of the barrier layer and the sidewall blocking structure can increase the number of interfaces in the electronic component package perpendicular to the plane of the carrier, wherein the interface is located around the electronic component package and Around the electronic components. In this way, the moisture can be effectively prevented from diffusing from the outside into the inside, and the probability that the electronic components in the electronic component package are damaged by the moisture from the side is reduced. In addition, the sidewall blocking structure can be integrated into the original process without additional cost.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10a、10b、10c、10d、10e、10f、10g、10h‧‧‧電子元件封裝體10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h‧‧‧ electronic component package

100‧‧‧承載板100‧‧‧ carrying board

102A‧‧‧軟性基板102A‧‧‧Soft substrate

102B‧‧‧支撐基板102B‧‧‧Support substrate

104‧‧‧底阻隔層104‧‧‧ bottom barrier

106‧‧‧有機緩衝層106‧‧‧Organic buffer layer

110‧‧‧電子元件110‧‧‧Electronic components

112‧‧‧有機薄膜電晶體112‧‧‧Organic film transistor

122‧‧‧第一絕緣層122‧‧‧First insulation

124‧‧‧第二絕緣層124‧‧‧Second insulation

126‧‧‧側壁部分126‧‧‧ sidewall section

130、130a~130d‧‧‧阻隔層130, 130a~130d‧‧‧ barrier layer

132、132a~132c‧‧‧側壁接觸部132, 132a~132c‧‧‧ sidewall contact

134、134a~134c‧‧‧延伸部134, 134a~134c‧‧‧ extension

136‧‧‧覆蓋部136‧‧‧ Coverage

138、138a、138b、138c‧‧‧凹凸表面138, 138a, 138b, 138c‧‧‧ concave surface

140、142、144‧‧‧介面140, 142, 144‧‧ interface

150a、150b‧‧‧側壁阻擋結構150a, 150b‧‧‧ sidewall blocking structure

152a、152b、152c‧‧‧子阻擋結構 152a, 152b, 152c‧‧‧sub-blocking structure

AA‧‧‧中心區 AA‧‧‧ Central District

CG‧‧‧封裝板 CG‧‧‧Package board

CH‧‧‧有機半導體通道層 CH‧‧‧Organic semiconductor channel layer

D‧‧‧汲極 D‧‧‧汲

EPL‧‧‧顯示介質層 EPL‧‧‧ display media layer

G‧‧‧閘極 G‧‧‧ gate

IB‧‧‧內邊緣區 IB‧‧ Inner Marginal Area

IN‧‧‧絕緣層 IN‧‧‧Insulation

M1‧‧‧走線 M1‧‧‧Wiring

M2‧‧‧導電層 M2‧‧‧ conductive layer

OB‧‧‧外邊緣區 OB‧‧‧ outer edge zone

PT‧‧‧凸塊 PT‧‧‧Bumps

PV‧‧‧保護層 PV‧‧‧ protective layer

S‧‧‧源極 S‧‧‧ source

S1、S2、S3‧‧‧側表面 S1, S2, S3‧‧‧ side surface

SE‧‧‧框膠 SE‧‧‧ frame glue

圖1為本發明第一實施例的電子元件封裝體的剖面示意圖。 圖2為本發明第二實施例的電子元件封裝體的剖面示意圖。 圖3為本發明第三實施例的電子元件封裝體的剖面示意圖。 圖4為第三實施例的電子元件封裝體10c的上視示意圖。 圖5為本發明第四實施例的電子元件封裝體的剖面示意圖。 圖6為本發明第五實施例電子元件封裝體的局部構件放大圖。 圖7為本發明第六實施例電子元件封裝體的局部構件放大圖。 圖8為本發明第七實施例電子元件封裝體的局部構件放大圖。 圖9為本發明第八實施例電子元件封裝體的局部構件放大圖。1 is a schematic cross-sectional view showing an electronic component package in accordance with a first embodiment of the present invention. 2 is a cross-sectional view showing an electronic component package in accordance with a second embodiment of the present invention. 3 is a cross-sectional view showing an electronic component package in accordance with a third embodiment of the present invention. Fig. 4 is a top plan view showing the electronic component package 10c of the third embodiment. Fig. 5 is a cross-sectional view showing an electronic component package in accordance with a fourth embodiment of the present invention. Fig. 6 is an enlarged view of a partial member of an electronic component package in accordance with a fifth embodiment of the present invention. Fig. 7 is an enlarged view of a partial member of an electronic component package in accordance with a sixth embodiment of the present invention. Fig. 8 is an enlarged view of a partial member of an electronic component package in accordance with a seventh embodiment of the present invention. Fig. 9 is an enlarged view of a partial member of an electronic component package in accordance with an eighth embodiment of the present invention.

10c‧‧‧電子元件封裝體 10c‧‧‧Electronic component package

100‧‧‧承載板 100‧‧‧ carrying board

102A‧‧‧軟性基板 102A‧‧‧Soft substrate

102B‧‧‧支撐基板 102B‧‧‧Support substrate

104‧‧‧底阻隔層 104‧‧‧ bottom barrier

106‧‧‧有機緩衝層 106‧‧‧Organic buffer layer

110‧‧‧電子元件 110‧‧‧Electronic components

112‧‧‧有機薄膜電晶體 112‧‧‧Organic film transistor

122‧‧‧第一絕緣層 122‧‧‧First insulation

124‧‧‧第二絕緣層 124‧‧‧Second insulation

126‧‧‧側壁部分 126‧‧‧ sidewall section

130‧‧‧阻隔層 130‧‧‧Barrier

132‧‧‧側壁接觸部 132‧‧‧ sidewall contact

134‧‧‧延伸部 134‧‧‧Extension

136‧‧‧覆蓋部 136‧‧‧ Coverage

142、144‧‧‧介面 142, 144‧‧ interface

150a‧‧‧側壁阻擋結構 150a‧‧‧ sidewall blocking structure

152a、152b‧‧‧子阻擋結構 152a, 152b‧‧‧sub-blocking structure

AA‧‧‧中心區 AA‧‧‧ Central District

CH‧‧‧有機半導體通道層 CH‧‧‧Organic semiconductor channel layer

D‧‧‧汲極 D‧‧‧汲

EPL‧‧‧顯示介質層 EPL‧‧‧ display media layer

G‧‧‧閘極 G‧‧‧ gate

IB‧‧‧內邊緣區 IB‧‧ Inner Marginal Area

M1‧‧‧走線 M1‧‧‧Wiring

M2‧‧‧導電層 M2‧‧‧ conductive layer

OB‧‧‧外邊緣區 OB‧‧‧ outer edge zone

PV‧‧‧保護層 PV‧‧‧ protective layer

S‧‧‧源極 S‧‧‧ source

S1、S2、S3‧‧‧側表面 S1, S2, S3‧‧‧ side surface

Claims (22)

一種電子元件封裝體,包括:一承載板,包括一中心區、一內邊緣區以及一外邊緣區,該內邊緣區位於該中心區與該外邊緣區之間;一電子元件,配置於該承載板上且位於該中心區;一第一絕緣層,配置於該承載板上,重疊於該電子元件且該第一絕緣層由該中心區延伸至該內邊緣區;一阻隔層,設置於該承載板上,且該阻隔層露出該中心區,其中該阻隔層包括一覆蓋部、一側壁接觸部以及一延伸部,該覆蓋部位於該內邊緣區上覆蓋於該第一絕緣層之上,該側壁接觸部圍繞該第一絕緣層的側表面,且該延伸部由該側壁接觸部以遠離該第一絕緣層的方向延伸至該外邊緣區;以及一顯示介質層,配置於該電子元件和該阻隔層的覆蓋部之上,其中該顯示介質層與該電子元件電性相連接並用以顯示影像。 An electronic component package includes: a carrier board including a central area, an inner edge area, and an outer edge area, the inner edge area being located between the central area and the outer edge area; an electronic component disposed on the a first insulating layer disposed on the carrier board, overlapping the electronic component and extending from the central region to the inner edge region; a barrier layer disposed on the carrier layer The barrier layer includes the cover portion, a sidewall contact portion, and an extension portion, the cover portion is disposed on the inner edge region over the first insulation layer The sidewall contact portion surrounds a side surface of the first insulating layer, and the extension portion extends from the sidewall contact portion to the outer edge region in a direction away from the first insulating layer; and a display dielectric layer disposed on the electron The component and the covering portion of the barrier layer are electrically connected to the electronic component and used to display an image. 如申請專利範圍第1項所述的電子元件封裝體,其中該覆蓋部暴露出該中心區。 The electronic component package of claim 1, wherein the covering portion exposes the central region. 如申請專利範圍第1項所述的電子元件封裝體,其中該電子元件包括一有機薄膜電晶體,其中該有機薄膜電晶體包括一閘極、一源極、一汲極以及一有機半導體通道層,該閘極的面積重疊於該有機半導體通道層的面積,該第一絕緣層位於該閘極與該有機半導體通道層之間,該源極與該汲極連接該有機半導體通道層。 The electronic component package of claim 1, wherein the electronic component comprises an organic thin film transistor, wherein the organic thin film transistor comprises a gate, a source, a drain, and an organic semiconductor channel layer. The area of the gate overlaps the area of the organic semiconductor channel layer. The first insulating layer is between the gate and the organic semiconductor channel layer, and the source and the drain are connected to the organic semiconductor channel layer. 如申請專利範圍第1項所述的電子元件封裝體,其中該側壁接觸部覆蓋該第一絕緣層的該側表面。 The electronic component package of claim 1, wherein the sidewall contact portion covers the side surface of the first insulating layer. 如申請專利範圍第1項所述的電子元件封裝體,更包括一第二絕緣層,該第一絕緣層配置於該第二絕緣層與該承載板之間。 The electronic component package of claim 1, further comprising a second insulating layer disposed between the second insulating layer and the carrier. 如申請專利範圍第5項所述的電子元件封裝體,其中該第二絕緣層的面積超出該第一絕緣層的該側表面而具有一側壁部分,該側壁部分位於該第一絕緣層的該側表面與該側壁接觸部之間。 The electronic component package of claim 5, wherein the second insulating layer has an area exceeding a side surface of the first insulating layer and has a sidewall portion, the sidewall portion being located at the first insulating layer The side surface is in contact with the side wall contact portion. 如申請專利範圍第1項所述的電子元件封裝體,更包括一側壁阻擋結構,設置在該內邊緣區中,且貫穿該第一絕緣層並構成擋牆狀。 The electronic component package of claim 1, further comprising a sidewall blocking structure disposed in the inner edge region and extending through the first insulating layer to form a barrier wall. 如申請專利範圍第7項所述的電子元件封裝體,其中該側壁阻擋結構包括在垂直該承載板的方向上堆疊的多個子阻擋結構。 The electronic component package of claim 7, wherein the sidewall blocking structure comprises a plurality of sub-barrier structures stacked in a direction perpendicular to the carrier. 如申請專利範圍第8項所述的電子元件封裝體,其中各該子阻擋結構的材質包括金屬。 The electronic component package of claim 8, wherein the material of each of the sub-blocking structures comprises a metal. 如申請專利範圍第1項所述的電子元件封裝體,其中該阻隔層的該延伸部在遠離該承載板的一上側形成凹凸表面。 The electronic component package of claim 1, wherein the extension of the barrier layer forms an uneven surface on an upper side away from the carrier. 如申請專利範圍第10項所述的電子元件封裝體,其中該凹凸表面為鋸齒狀、微杯狀、階梯狀或以上任選一種以上的組合。 The electronic component package according to claim 10, wherein the uneven surface is in a zigzag shape, a micro cup shape, a step shape or a combination of at least one of the above. 如申請專利範圍第1項所述的電子元件封裝體,其中該阻隔層的材料為SiNx、SiOx或多層SiNx/SiOx薄膜。 The electronic component package according to claim 1, wherein the material of the barrier layer is SiNx, SiOx or a multilayer SiNx/SiOx film. 如申請專利範圍第1項所述的電子元件封裝體,更包括:一有機緩衝層,配置於該電子元件與該承載板之間;一底阻隔層,配置於該有機緩衝層與該承載板之間;以及一保護層,配置於該顯示介質層上。 The electronic component package of claim 1, further comprising: an organic buffer layer disposed between the electronic component and the carrier; a bottom barrier layer disposed on the organic buffer layer and the carrier And a protective layer disposed on the display medium layer. 如申請專利範圍第13項所述的電子元件封裝體,其中該阻隔層的該延伸部接觸該底阻隔層。 The electronic component package of claim 13, wherein the extension of the barrier layer contacts the bottom barrier layer. 如申請專利範圍第13項所述的電子元件封裝體,其中該阻隔層的該側壁接觸部覆蓋該有機緩衝層的側表面。 The electronic component package of claim 13, wherein the sidewall contact portion of the barrier layer covers a side surface of the organic buffer layer. 一種電子元件封裝體,包括:一承載板,該承載板包括一中心區以及一邊緣區;一電子元件,配置於該承載板上並位於該中心區;多個絕緣層,配置於該承載板上並重疊於該電子元件,該些絕緣層分別由該中心區延伸至該邊緣區中;一側壁阻擋結構,設置在該邊緣區中,其中該側壁阻擋結構貫穿該些絕緣層並構成擋牆狀;以及一顯示介質層,配置於該電子元件和該側壁阻擋結構之上,其中該顯示介質層與該電子元件電性相連接並用以顯示影像。 An electronic component package includes: a carrier board, the carrier board includes a central area and an edge area; an electronic component disposed on the carrier board and located in the central area; and a plurality of insulating layers disposed on the carrier board And overlying the electronic component, the insulating layers respectively extending from the central region into the edge region; a sidewall blocking structure disposed in the edge region, wherein the sidewall blocking structure penetrates the insulating layers and constitutes a retaining wall And a display medium layer disposed on the electronic component and the sidewall blocking structure, wherein the display dielectric layer is electrically connected to the electronic component and used to display an image. 如申請專利範圍第16項所述的電子元件封裝體,其中該側壁阻擋結構包括在垂直該承載板的方向上堆疊的多個子阻擋結構。 The electronic component package of claim 16, wherein the sidewall blocking structure comprises a plurality of sub-barrier structures stacked in a direction perpendicular to the carrier. 如申請專利範圍第17項所述的電子元件封裝體,其中該些子阻擋結構其中一者電性連接該電子元件。 The electronic component package of claim 17, wherein one of the sub-blocking structures is electrically connected to the electronic component. 如申請專利範圍第17項所述的電子元件封裝體,其中各該子阻擋結構的材質包括金屬。 The electronic component package of claim 17, wherein the material of each of the sub-blocking structures comprises a metal. 如申請專利範圍第19項所述的電子元件封裝體,其中該側壁阻擋結構電性浮置。 The electronic component package of claim 19, wherein the sidewall blocking structure is electrically floating. 如申請專利範圍第16項所述的電子元件封裝體,其中該電子元件包括一有機薄膜電晶體,該些絕緣層包括一第一絕緣層與一第二絕緣層,其中該有機薄膜電晶體包括一閘極、一源極、一汲極以及一有機半導體通道層,該閘極的面積重疊於該有機半導體通道層的面積,該第一絕緣層位於該閘極與該有機半導體通道層之間,該源極與該汲極連接該有機半導體通道層,且該第一絕緣層配置於該第二絕緣層與該承載板之間。 The electronic component package of claim 16, wherein the electronic component comprises an organic thin film transistor, the insulating layer comprises a first insulating layer and a second insulating layer, wherein the organic thin film transistor comprises a gate, a source, a drain, and an organic semiconductor channel layer, the gate having an area overlapping the area of the organic semiconductor channel layer, the first insulating layer being located between the gate and the organic semiconductor channel layer The source and the drain are connected to the organic semiconductor channel layer, and the first insulating layer is disposed between the second insulating layer and the carrier. 如申請專利範圍第16項所述的電子元件封裝體,更包括:一有機緩衝層,設置於該電子元件與該承載板之間;一底阻隔層,設置於該有機緩衝層與該承載板之間;以及一保護層,設置於該顯示介質層上。The electronic component package of claim 16, further comprising: an organic buffer layer disposed between the electronic component and the carrier plate; a bottom barrier layer disposed on the organic buffer layer and the carrier plate And a protective layer disposed on the display medium layer.
TW105123160A 2016-07-22 2016-07-22 Electronic device package TWI607595B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW105123160A TWI607595B (en) 2016-07-22 2016-07-22 Electronic device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105123160A TWI607595B (en) 2016-07-22 2016-07-22 Electronic device package

Publications (2)

Publication Number Publication Date
TWI607595B true TWI607595B (en) 2017-12-01
TW201804639A TW201804639A (en) 2018-02-01

Family

ID=61230736

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105123160A TWI607595B (en) 2016-07-22 2016-07-22 Electronic device package

Country Status (1)

Country Link
TW (1) TWI607595B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI701801B (en) * 2017-12-18 2020-08-11 美商艾賽斯股份有限公司 Packaged semiconductor device and method for manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200507032A (en) * 2003-06-27 2005-02-16 Semiconductor Energy Lab Co Ltd Display device and method of manufacturing thereof
CN1812119A (en) * 2004-12-14 2006-08-02 三星Sdi株式会社 Organic light emitting display with auxiliary electrode line and method of fabricating the same
TW200917490A (en) * 2007-07-13 2009-04-16 Sony Corp Semiconductor device, semiconductor device manufacturing method, display device and display device manufacturing method
TW201405804A (en) * 2012-07-31 2014-02-01 Sony Corp Display unit and electronic apparatus
TW201407846A (en) * 2012-08-07 2014-02-16 E Ink Holdings Inc Organic semiconductor device and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200507032A (en) * 2003-06-27 2005-02-16 Semiconductor Energy Lab Co Ltd Display device and method of manufacturing thereof
CN1812119A (en) * 2004-12-14 2006-08-02 三星Sdi株式会社 Organic light emitting display with auxiliary electrode line and method of fabricating the same
TW200917490A (en) * 2007-07-13 2009-04-16 Sony Corp Semiconductor device, semiconductor device manufacturing method, display device and display device manufacturing method
TW201405804A (en) * 2012-07-31 2014-02-01 Sony Corp Display unit and electronic apparatus
TW201407846A (en) * 2012-08-07 2014-02-16 E Ink Holdings Inc Organic semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI701801B (en) * 2017-12-18 2020-08-11 美商艾賽斯股份有限公司 Packaged semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
TW201804639A (en) 2018-02-01

Similar Documents

Publication Publication Date Title
US11088345B2 (en) Organic light emitting diode display panel and manufacturing method thereof
TWI788925B (en) Display apparatus
CN108630823B (en) Display device
CN109390381B (en) Organic light emitting display device and method of manufacturing the same
US10217956B2 (en) Display device
CN110137375B (en) Organic light-emitting display panel, device and method
US20120168756A1 (en) Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor
US20200176519A1 (en) Display device and manufacturing method thereof
TWI758992B (en) Touch display device
US10840267B2 (en) Array substrates and manufacturing methods thereof, and display panels
JP4723283B2 (en) Manufacturing method of liquid crystal panel
WO2016026225A1 (en) Organic light-emitting display device and method for packaging organic light-emitting diode
US10325985B2 (en) Protecting transistor elements against degrading species
KR20160149599A (en) Organic Light Emitting Diode Panel and Flexible Display Device Using the Same
US9159866B2 (en) Photo sensor, method of manufacturing photo sensor, and display apparatus
CN113284935A (en) Display substrate, preparation method thereof and display device
US20170243926A1 (en) Display device and manufacturing method of the same
TWI607595B (en) Electronic device package
WO2019041954A1 (en) Display panel, manufacturing method therefor, and display device
CN112713139A (en) Flexible display panel and flexible display device
US9231041B2 (en) Organic light emitting diode display device and method of manufacturing the same
CN112885975B (en) Display substrate, preparation method thereof and display device
JP2013025125A (en) Display device
CN103003744B (en) Liquid-crystal display device and method of manufacturing same
CN107644937B (en) Electronic component package